TWM495614U - Tapered vacuum chamber - Google Patents

Description

Conical vacuum chamber

The present invention is a conical vacuum chamber, especially a conical vacuum chamber with a small volume favorable gas evacuation speed by utilizing the range of conical diffusion of the evaporation source.

Conventional vacuum chambers can be used for evaporation. A film is formed by heating the material to be evaporated in a vacuum chamber until vaporization sublimates and attaching the gas to the surface of the substrate placed nearby. Depending on the type of vapor deposition material or substrate, it can be classified into heating methods such as resistance heating, electron beam, high-cycle induction, and laser. The vapor deposition materials include metal materials such as aluminum, lead, gold, silver, platinum, and nickel, and materials capable of producing optical properties, and oxides and fluorides such as SiO2, TiO2, ZrO2, and MgF2 are mainly used. In addition to metal, vapor deposition can be used for resin and glass, and in recent years, continuous paper has also become vapor-depositable.

The vacuum chamber is vacuumed so that molecules of the vapor deposition material avoid collision with gas molecules remaining in the container before reaching the substrate, and the evaporation temperature of the evaporation material can be lowered. Generally, a vacuum of 10-3~10-4Pa is required, and a vacuum pump is required to achieve a vacuum.

Many semiconductor processes are often used in a vacuum environment. Row. For example, vapor deposition of a semiconductor wafer must be performed in a vacuum chamber to ensure the quality and yield of the vapor deposition.

The vacuum chamber must be evacuated to perform the relevant process actions. The time during which the chamber is evacuated is proportional to the volume of the vacuum chamber. The larger the volume of the vacuum chamber, the longer the vacuum is taken, and the smaller the volume of the vacuum chamber, the shorter the vacuuming time.

The shorter the vacuum chamber is evacuated, the faster the process speed is, which can effectively improve the productivity and utilization of the semiconductor process. Therefore, it is generally carried out using a preferred pumping device.

Please refer to the first figure, which is a schematic diagram of a conventional vacuum chamber, which includes a vacuum chamber 11, a vapor-deposited carrier 12, a rotating shaft 13, an evaporation source 14, and an evaporation range 15. When the vacuum chamber 11 is subjected to vapor deposition, it is necessary to use a vacuum pump to evacuate the air in the vacuum chamber to bring the inside into a vacuum state. Then, the vapor deposition material of the vapor deposition source 14 is tapered upward, and the rotating shaft 13 is rotated by the vapor deposition material carrier 12, and the vapor deposition material carrier 12 is vapor-deposited, and the vapor deposition material is plated. On the surface of the vapor deposited.

The conventional technology has the following disadvantages:

The vacuum chamber is conventionally shaped in the shape of a cylinder. When vacuuming, it takes a long time, and the production capacity and utilization rate of the process cannot be improved.

Therefore, how to improve the above-mentioned shortcomings, prevent edge defects, and reduce the damage of the soft film is the concern of this case.

The purpose of this case is to propose a novel and progressive conical vacuum chamber in vacuum The shape of the cavity is modified to conform to the conical range of the diffusion of the vapor deposition material, and the volume of the vacuum chamber is reduced, so that when vacuuming, the vacuum can be quickly evacuated to increase the throughput of the process.

In order to achieve the above object, the present invention proposes a conical vacuum chamber for a vacuum processing process, comprising at least: a body having a taper shape with a top portion larger than the bottom portion; and an evaporation source disposed at the bottom of the body An object to be plated is placed on top of the body; wherein the evaporation is caused by evaporation, and an evaporation is generated, and then the evaporation is conically diffused upward, whereby the evaporation is performed Plating on the surface of the object to be plated; wherein, in vapor deposition, the system is evacuated, and the smaller volume design of the cone of the body reduces the time during which the body is evacuated.

According to the conical vacuum chamber of the present invention, the vacuum processing process is a semiconductor vacuum processing process.

According to the conical vacuum chamber of the present invention, the evaporation source is a semiconductor evaporation source.

According to the conical vacuum chamber of the present invention, the object to be plated is a semiconductor wafer.

According to the conical vacuum chamber of the present invention, wherein the tapered system is a conical shape, the diameter of the top portion is larger than the bottom portion.

11‧‧‧Vacuum chamber

12‧‧‧ vaporized vehicle

13‧‧‧ shaft

14‧‧‧vaporation source

15‧‧‧Extraction range

21‧‧‧Conical vacuum chamber

The first picture is a schematic view of a conventional vacuum chamber; The second figure is a schematic view of a tapered vacuum chamber of the preferred embodiment of the present invention.

Referring to the second drawing, a schematic diagram of a tapered vacuum chamber according to a preferred embodiment of the present invention includes: a vapor-deposited carrier 12, a rotating shaft 13, an evaporation source 14, an evaporation range 15, and a conical vacuum chamber 21; .

The conical vacuum chamber 21 of the present invention is used for a vacuum processing process, the body of which is tapered, and the top is larger than the bottom. A vapor deposition source 14 and a vapor deposition material carrier 12 are provided in the main body. The evaporation source 14 is placed at the bottom of the conical vacuum chamber 21. The object to be plated is placed on the top vapor-deposited carrier 12, which may be a semiconductor wafer or wafer.

The vapor deposition source 14 generates a vapor deposition material during vapor deposition, and then the vapor deposition material diffuses in a conical shape upward in the vapor deposition range 15, whereby the vapor deposition material is plated on the surface of the object to be plated. Wherein, in the evaporation process, the conical vacuum chamber system is evacuated, and since the conical vacuum chamber is designed to have a smaller volume than the conventional cylindrical cavity, the time during which the body is evacuated can be reduced.

In the conical vacuum chamber of the present case, the vacuum processing process is a semiconductor vacuum processing process. The evaporation source is a semiconductor evaporation source. The object to be plated is a semiconductor wafer or wafer. At the same time, the taper is a conical shape with a top portion having a larger diameter than the bottom portion.

The tapered design of the conical vacuum chamber of the present invention can effectively reduce the volume of the cavity, and thus the vacuum chamber can quickly reach a vacuum state during the vacuuming process, thereby increasing the productivity of the semiconductor process and the utilization rate of the device.

This case has the following advantages:

The tapered vacuum chamber design proposed in this case can reduce the volume of the cavity, and quickly reach the vacuum state when vacuuming, thereby increasing the productivity and utilization rate of the vacuum evaporation process.

In summary, the tapered vacuum chamber proposed in this case effectively reduces the volume of the cavity and reduces the time required for vacuuming. The improvement is novel and practical, such as its modified design, for example, applied to various vacuum chambers, using various The tapered cavity, as long as it is presented in a tapered shape structure in the vacuum chamber, is intended to be disclosed and protected by the present invention.

The technology disclosed in this case can be implemented by a person familiar with the technology, and its unprecedented practice is also patentable, and the application for patent is filed according to law. However, the above embodiments are not sufficient to cover the scope of patents to be protected in this case. Therefore, the scope of the patent application is attached.

12‧‧‧ vaporized vehicle

13‧‧‧ shaft

14‧‧‧vaporation source

15‧‧‧Extraction range

21‧‧‧Conical vacuum chamber

Claims (5)

A conical vacuum chamber is used for a vacuum processing process, comprising at least: a body having a taper shape with a top portion larger than a bottom portion; an evaporation source disposed at a bottom portion of the body; and a substrate to be plated And being deposited on the top of the body; wherein the evaporation is caused by evaporation, and an evaporation is generated, and then the evaporation is diffused upward in a conical shape, thereby plating the evaporation on the surface of the object to be plated Wherein, in the evaporation process, the system is evacuated, and the tapered small volume design of the body reduces the time during which the body is evacuated. The tapered vacuum chamber of claim 1, wherein the vacuum processing process is a semiconductor vacuum processing process. The tapered vacuum chamber according to claim 1, wherein the evaporation source is a semiconductor evaporation source. The tapered vacuum chamber of claim 1, wherein the object to be plated is a semiconductor wafer. The tapered vacuum chamber of claim 1, wherein the tapered shape is a conical shape having a top portion having a larger diameter than the bottom portion.