TWM493841U - Layout structure of micro-spacing pattern - Google Patents

Description

Wiring pattern of micro-pitch pattern

The present invention relates to a wiring structure, and more particularly to a wiring structure of a micro-pitch pattern.

Due to the evolution of the semiconductor process, the devices and traces on the semiconductor substrate are more closely distributed, especially in the fine-pitch patterning process, the line width on the semiconductor substrate is only about 10 μm. The space between the line and the line is also only about 10 μm. Therefore, the general fine-pitch patterning process is selected from the etching and patterning of the wiring layer by wet etching or dry etching, wherein dry etching is utilized. Gas ions (plasma) remove unwanted metal layers, but due to the high cost of dry etching, it is common in the industry to pattern the circuit layers by wet etching.

The wet etching uses a etchant to perform a displacement reaction with the metal layer to remove the unnecessary metal layer. The wet etching process can be briefly described as follows. First, the semiconductor substrate is plated with a metal layer, and then the metal layer is coated on the metal layer. Covering a photoresist layer, then exposing and developing the photoresist layer by a photomask to pattern the photoresist layer, then plating the circuit layer on the exposed metal layer, and then blocking the photoresist by an etching process The metal layer between the layers and the lines is removed to form the wiring of the semiconductor substrate. However, in the micro-pitch patterning process, the width of the line is small, and the space between the line and the line is also relatively narrow, so that the etchant is often poorly substituted in the space enclosed by the three sides of the line and the line, resulting in poor replacement. A metal layer remains in this space and cannot be completely removed.

The main purpose of the present invention is that the first interval between the first line segment of the first wire portion and the third wire segment of the second wire portion is greater than the second line segment of the first wire portion to the fourth line segment of the second wire portion The second spacing between the three sides of the etched space formed between the connecting portion, the third line segment and the first line segment can be thoroughly etched to avoid residual metal layer.

The wiring structure of the micro-pitch pattern of the present invention comprises a connecting portion, a first lead portion and a second lead portion, and the second lead portion is electrically connected to the first lead portion via the connecting portion, and the connecting portion, The first lead portion and the second lead portion are metal layers of the same layer, the first lead portion has a first line segment and a second line segment, the first line segment is connected to the connecting portion, and the second line segment is connected The first line segment is electrically connected to the connecting portion via the first line segment, the second wire portion has a third line segment and a fourth line segment, the third line segment is connected to the connecting portion, and The connecting portion, the third line segment and the first line segment form a three-sided closed etching space, the fourth line segment is connected to the third line segment, and the fourth line segment is electrically connected to the connecting portion via the third line segment, The first line segment has a first spacing between the first line segment and the second line segment, and the second line segment has a second spacing between the second line segments and the second line segment is greater than the second spacing.

The first spacing between the third line segment and the first line segment is greater than the second spacing between the fourth line segment and the second line segment, so that the connecting portion, the third line segment, and the The three-sided closed etching space formed by the first line segment can maintain good etchant displacement, and the metal layer in the etching space can be completely removed in the etching process to avoid the residual of the metal layer.

Referring to FIGS. 1 and 2, a preferred embodiment of the present invention, a micro-pitch pattern wiring structure 100 is formed on a substrate 200 by an etching process, and the micro-pitch pattern wiring structure 100 includes a connection portion. 110. A first lead portion 120 and a second lead portion 130. The connecting portion 110, the first lead portion 120 and the second lead portion 130 are metal layers of the same layer, and are formed on the substrate by the same process. 200. Therefore, the second lead portion 130 is electrically connected to the first lead portion 120 via the connecting portion 110.

Referring to FIGS. 1 and 2, the first wire portion 120 has a first wire segment 121 and a second wire segment 122. The first wire segment 121 is connected to the connecting portion 110, and the second wire segment 122 is connected to the first wire segment. The segment 121 and the second segment 122 are electrically connected to the connecting portion 110 via the first segment 121 for transmitting electrical signals.

Referring to FIGS. 1 and 2, the second wire portion 130 has a third wire segment 131 and a fourth wire segment 132. The third wire segment 131 is connected to the connecting portion 110, and the connecting portion 110, the third wire segment 131, and The first line segment 121 forms a three-sided closed etching space 1S. The fourth line segment 132 is connected to the third line segment 131. The fourth line segment 132 is electrically connected to the connecting portion 110 via the third line segment 131 for powering. In the present embodiment, one width of the second lead portion 130 is 10 μm, and the height 1H of the second lead portion 130 is 10 μm, and the connecting portion 110 and the first lead portion 120 are The width and height are the same as those of the second lead portion 130, but this creation is not limited thereto.

Referring to FIG. 1 , the first line segment 131 has a first spacing 1D between the first line segment 131 and the second line segment 132 and the second line segment 122 has a second spacing 2D between the first line segment 132 and the second line segment 122. The pitch 1D is greater than the second pitch 2D. By the first pitch 1D being greater than the second pitch 2D, a better etchant displacement is maintained in the etched space 1S to avoid residual metal layer after etching.

Referring to FIGS. 1 and 2, in the micro-pitch pattern, the width and height of the lead portions and the size of the etching space 1S all affect the replacement of the etching liquid. Therefore, in the embodiment, the second wire A preferred ratio between the width 1W of the portion 130 and the first pitch 1D and between the width 1W and the height 1H of the second lead portion 130 is to prevent the metal layer from being generated after the etching space 1S is etched. Remaining, preferably, the ratio of the width 1W of the second lead portion 130 to the first pitch 1D is between 1:2 and 1:3, and the width 1W of the second lead portion 130 and the height 1H The ratio of 1:0.8 to 1:1.2 allows the metal layer of the etched space 1S to be completely removed during the etching process.

Referring to FIGS. 1 and 2, the third line segment 131 of the second lead portion 130 has a straight portion 131a and a bent portion 131b. The straight portion 131a is connected to the connecting portion 110, and the bent portion 131b is connected to the straight portion. 131a and the fourth line segment 132, the straight portion 131a has a first side surface 131c, the bent portion 131b has a second side surface 131d, the first side surface 131c and the second side surface 131d face the etching space 1S, the first A first angle 1A is formed between a side surface 131c and the second side surface 131d. The first angle 1A is less than 180 degrees. In the embodiment, the straight portion is also caused if the first angle 1A is less than 90 degrees. There is an etched metal residue at an angle between the 131a and the bent portion 131b. Therefore, preferably, the first angle 1A is between 90 and 180 degrees, and the straight portion 131a and the bent portion 131b can be made. The metal layer between the corners is completely removed.

Referring to FIGS. 1 and 2, the bent portion 131b has a first end 1E and a second end 2E. The first end 1E is connected to the straight portion 131a, and the second end 2E is connected to the fourth line segment 132. A second spacing 3D is formed between the second side surface 131d of the bent portion 131b and the first line segment 121. In the embodiment, in order to obtain a larger wiring area or an installation area of the device, preferably, The third pitch 3D is tapered from the first end 1E toward the second end 2E.

Referring to FIGS. 3 and 4 , which is a second embodiment of the present invention, the difference from the first embodiment is that the micro-pitch pattern wiring structure 100 further includes a third lead portion 140 , and the second lead portion 130 . Located between the first lead portion 120 and the third lead portion 140, the third lead portion 140 to the second lead portion 130 have a fourth spacing 4D, and the fourth spacing 4D is not less than the second spacing. 2D, to avoid that the spacing between the second wire portion 130 and the third wire portion 140 is smaller than the second pitch 2D, resulting in incomplete etching of the metal layer.

Referring to FIGS. 3 and 4, the third wire portion 140 has a bit line segment 141, wherein the bent portion 131b has a third side surface 131e facing the third wire portion 140. The line segment 141 has a fourth side surface 141a. The fourth side surface 141a and the third side surface 131e have a second angle 2A. The second angle 2A is less than 1 degree. The bent portion 131b of the second lead portion 130 is defined. Arranging in parallel with the yield line segment 141 of the third wire portion 140 prevents the spacing between the bent portion 131b and the yielding line segment 141 from being too small.

Please refer to Figures 5 and 6 and Figures 7 and 8 for the third embodiment and the fourth embodiment of the present invention. Similarly, the third embodiment and the fourth embodiment are provided by the third line segment 131 to The first spacing 1D between the first line segments 121 is greater than the second spacing 2D between the fourth line segments 132 and the second line segments 122 to avoid incomplete etching of the metal layer of the etching space 1S.

The first spacing 1D between the third line segment 131 and the first line segment 121 is greater than the second spacing 2D between the fourth line segment 132 and the second line segment 122, so that the connecting portion 110 is The three-line closed etching space 1S formed by the third line segment 131 and the first line segment 121 can maintain good etchant replacement, and the metal layer in the etching space 1S can be completely removed in the etching process. To avoid the residue of the metal layer.

The scope of protection of this creation is subject to the definition of the scope of the patent application, and any changes and modifications made by those skilled in the art without departing from the spirit and scope of this creation are within the scope of protection of this creation. .

100‧‧‧Micro-pitch pattern wiring structure
110‧‧‧Connecting Department
120‧‧‧First lead section
121‧‧‧First line segment
122‧‧‧second line
130‧‧‧Second wire section
131‧‧‧ third line segment
131a‧‧‧Linear
131b‧‧‧Bend
131c‧‧‧ first side
131d‧‧‧ second side
131e‧‧‧ third side
132‧‧‧Fourth line
140‧‧‧ Third lead section
141‧‧‧Let the line segment
141a‧‧‧fourth side
200‧‧‧Substrate
1S‧‧‧etching space
1D‧‧‧first spacing
2D‧‧‧second spacing
3D‧‧‧ third spacing
4D‧‧‧fourth spacing
1E‧‧‧ first end
2E‧‧‧ second end
1A‧‧‧first angle
2A‧‧‧second angle
1W‧‧‧Width
1H‧‧‧ Height

Fig. 1 is a partial plan view showing a wiring structure of a micro-pitch pattern according to a first embodiment of the present invention. Fig. 2 is a partial perspective view showing the wiring structure of the micro-pitch pattern according to the first embodiment of the present invention. Fig. 3 is a partial plan view showing a wiring structure of a micro-pitch pattern according to a second embodiment of the present invention. Figure 4 is a partial perspective view of the wiring structure of the micro-pitch pattern in accordance with a second embodiment of the present invention. Fig. 5 is a partial plan view showing a wiring structure of a micro-pitch pattern according to a third embodiment of the present invention. Figure 6 is a partial perspective view of the wiring structure of the micro-pitch pattern in accordance with a third embodiment of the present invention. Figure 7 is a partial plan view showing a wiring structure of a micro-pitch pattern in accordance with a fourth embodiment of the present invention. Figure 8 is a partial perspective view of the wiring structure of the micro-pitch pattern in accordance with a fourth embodiment of the present invention.

100‧‧‧Micro-pitch pattern wiring structure

110‧‧‧Connecting Department

120‧‧‧First lead section

121‧‧‧First line segment

122‧‧‧second line

130‧‧‧Second wire section

131‧‧‧ third line segment

131a‧‧‧Linear

131b‧‧‧Bend

132‧‧‧Fourth line

200‧‧‧Substrate

1S‧‧‧etching space

1D‧‧‧first spacing

2D‧‧‧second spacing

3D‧‧‧ third spacing

1E‧‧‧ first end

2E‧‧‧ second end

1W‧‧‧Width

Claims (8)

A micro-pitch pattern wiring structure, comprising: a connecting portion; a first lead portion having a first line segment and a second line segment, the first line segment connecting the connecting portion, the second line segment connecting the first portion a first line segment, wherein the second wire segment is electrically connected to the connecting portion via the first wire segment; and a second wire portion electrically connected to the first wire portion via the connecting portion, and the connecting portion, the first portion The wire portion and the second wire portion are metal layers of the same layer, the second wire portion has a third line segment and a fourth line segment, the third line segment is connected to the connecting portion, and the connecting portion, the third line segment and The first line segment forms a three-sided closed etching space, the fourth line segment is connected to the third line segment, and the fourth line segment is electrically connected to the connecting portion via the third line segment, the third line segment to the first line segment There is a first spacing between the fourth line segment and the second line segment, and the second line segment has a second spacing, the one spacing being greater than the second spacing. The wiring structure of the micro-pitch pattern according to claim 1, wherein the third line segment of the second lead portion has a straight portion and a bent portion, and the straight portion is connected to the connecting portion, and the bent portion is connected The straight portion and the fourth line segment have a first side surface, the bent portion has a second side surface, the first side surface and the second side surface face the etching space, the first side surface to the second side There is a first angle between the sides, and the first angle is less than 180 degrees. The wiring structure of the micro-pitch pattern according to claim 2, wherein the first included angle is between 90 and 180 degrees. The wiring structure of the micro-pitch pattern according to claim 2, wherein the bent portion has a first end and a second end, the first end is connected to the straight portion, and the second end is connected to the fourth line segment And a third spacing between the second side of the bent portion and the first line segment, the third spacing being tapered from the first end toward the second end. The wiring structure of the micro-pitch pattern according to claim 1, wherein the second wire portion has a width, and the ratio of the width to the first pitch is between 1:2 and 1:3. The wiring structure of the micro-pitch pattern according to claim 5, wherein the second lead portion has a height, and the ratio of the width to the height is between 1:0.8 and 1:1.2. The wiring structure of the micro-pitch pattern according to claim 1, further comprising a third lead portion, the second lead portion being located between the first lead portion and the third lead portion, the third lead There is a fourth spacing between the portion and the second wire portion, and the fourth spacing is not less than the second spacing. The wiring structure of the micro-pitch pattern according to claim 2, further comprising a third lead portion, the second lead portion being located between the first lead portion and the third lead portion, the third lead The portion has a yield line segment, wherein the bent portion has a third side surface facing the third lead portion, the yield line segment has a fourth side surface, and the fourth side surface has a fourth side surface a second angle, the second angle being less than 1 degree.