TWM486861U - Composite lead frame structure - Google Patents
Composite lead frame structure Download PDFInfo
- Publication number
- TWM486861U TWM486861U TW103204883U TW103204883U TWM486861U TW M486861 U TWM486861 U TW M486861U TW 103204883 U TW103204883 U TW 103204883U TW 103204883 U TW103204883 U TW 103204883U TW M486861 U TWM486861 U TW M486861U
- Authority
- TW
- Taiwan
- Prior art keywords
- gap
- layer
- legs
- guiding
- lead frame
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Landscapes
- Lead Frames For Integrated Circuits (AREA)
Description
本創作係關於一種軟性基板及金屬導線架之複合結構；更詳而言之，特別係指將軟性基板與金屬導線架黏接組成之複合導線架結構，其效益為導電性佳、熱導性佳、機械耐久力高、高腳化及小型化，又能應用於覆晶、打線等半導體封裝技術之產品，且適用於LED、IC半導體封裝之產品。The present invention relates to a composite structure of a flexible substrate and a metal lead frame; more specifically, a composite lead frame structure in which a flexible substrate and a metal lead frame are bonded together, and the benefit thereof is good conductivity and thermal conductivity. Good, high mechanical durability, high strength and miniaturization, and can be applied to semiconductor packaging technology such as flip chip and wire bonding, and is suitable for LED and IC semiconductor package products.
習知的軟性基板主要是將銅箔與醯胺化合物(Polyimide,PI)貼合而成，再以蝕刻、電解電鍍形成導電線路，而完成軟性基板的製作；如第1圖所示，該軟性基板8主要結構係分為軟性基材80、上金屬層81及黏著層82，其中，該上金屬層81上方係設有金屬電鍍層83。習知，軟性基板8與IC84共晶時，一般以承載板(圖中未示)提升該軟性基板8封裝之機械耐久力，使得IC84封裝製程之良率提高；此外，該軟性基材80一般係為醯胺化合物(Polyimide,PI)之材質，使得熱傳導係數約在0.1~0.35W/mK的軟性基材80的導熱效果劣於熱傳導係數約在398W/mK的銅金屬導線架，或者為了增加導熱效果必須額外設置散熱結構。The conventional soft substrate is mainly formed by laminating a copper foil and a liminide compound (PI), and then forming a conductive circuit by etching or electrolytic plating to complete the fabrication of the flexible substrate; as shown in FIG. 1, the softness is as shown in FIG. The main structure of the substrate 8 is divided into a soft substrate 80, an upper metal layer 81, and an adhesive layer 82. A metal plating layer 83 is disposed on the upper metal layer 81. Conventionally, when the flexible substrate 8 is eutectic with the IC 84, the mechanical durability of the flexible substrate 8 package is generally increased by a carrier plate (not shown), so that the yield of the IC84 packaging process is improved; in addition, the flexible substrate 80 is generally It is a material of a phthalamide compound (Polyimide, PI), so that the thermal conductivity of the soft substrate 80 having a heat transfer coefficient of about 0.1 to 0.35 W/mK is inferior to that of a copper metal lead frame having a heat transfer coefficient of about 398 W/mK, or The heat transfer effect must be additionally provided with a heat dissipation structure.
此外，習知的銅金屬導線架9如第2圖所示，該銅金屬導線架9主要結構係為導腳90，該導腳90上方及下方係設有金屬電鍍層91。由於銅金屬導線架9之厚度造成各導腳間距大於軟性基板之導電線路的間距，使得銅金屬導線架9之導腳數遠小於軟性基板之導電線路數，導致IC封裝後的產品尺寸較大。In addition, as shown in FIG. 2, the conventional copper metal lead frame 9 has a main structure of a lead pin 90, and a metal plating layer 91 is disposed above and below the lead pin 90. Since the thickness of the copper metal lead frame 9 causes the pitch of the lead pins to be larger than the pitch of the conductive lines of the flexible substrate, the number of lead wires of the copper metal lead frame 9 is much smaller than the number of conductive lines of the flexible substrate, resulting in a larger product size after IC packaging. .
有鑑於此，本案創作人遂依其多年從事相關領域之研發經驗，針對前述之缺失進行深入探討，並依前述需求積極尋求解決之道，歷經長時間的努力研究與多次測試，終於完成此創作。In view of this, the creators of this case have been engaged in research and development experience in related fields for many years, and have conducted in-depth discussions on the above-mentioned shortcomings, and actively sought solutions according to the above-mentioned needs. After a long period of hard work and repeated tests, this is finally completed. creation.
本創作係以軟性基板及金屬導線架緊密結合而成之複合導線架結構，其複合導線架同時具有金屬導線架及軟性基板之優點，該優點為導電性佳、熱導性佳、機械耐久力高、高腳化及小型化，又能適用於覆晶、打線等LED或IC半導體封裝技術之產品。The present invention is a composite lead frame structure in which a flexible substrate and a metal lead frame are closely combined, and the composite lead frame has the advantages of a metal lead frame and a flexible substrate at the same time, and the advantages are good conductivity, good thermal conductivity, and mechanical durability. High, high and small, and can be applied to LED or IC semiconductor packaging technology products such as flip chip and wire.
本創作所述複合導線架結構係由植晶層及焊接層組合而成，又該複合導線架結構係以複數個單體排列所形成，單體與單體之間係設有單體間隙，又該單體間隙係設有單體植晶間隙、單體貼帶間隙及焊接層單體間隙，又該焊接層單體間隙係填充有絕緣材，該單體係設有植晶部及焊接部，該植晶部係設有複數個導腳及一絕緣間隙，該植晶部之各導腳係設有複數個導電通孔，又該植晶部之各導腳係依序由頂端向下設有上金屬層、上黏著層、貼帶層及下黏著層組合而成，該植晶部之絕緣間隙係設有導腳絕緣間隙及導腳貼帶間隙，又該絕緣間隙係形成於各導腳尖與各導腳尖之間，該焊接部係設有複數個導腳及一絕緣間隙，該焊接部之絕緣間隙係填充有絕緣材，又該焊接部之絕緣間隙係形成於各導腳尖與各導腳尖之間，又該植晶部之各導腳與焊接部之各導腳上下相互對應，使得植晶部之下黏著層與焊接部緊密結合而成。The composite lead frame structure of the present invention is formed by a combination of a seed layer and a solder layer, and the composite lead frame structure is formed by a plurality of monomer arrangements, and a monomer gap is provided between the monomer and the monomer. The single cell gap is provided with a single crystallographic gap, a single cell gap, and a solder layer single gap, and the solder layer is filled with an insulating material, and the single system is provided with a seeding portion and soldering. The pedestal portion is provided with a plurality of guiding legs and an insulating gap, wherein each guiding leg of the irrigating portion is provided with a plurality of conductive through holes, and each guiding leg of the irrigating portion is sequentially directed from the top end The upper metal layer, the upper adhesive layer, the adhesive layer and the lower adhesive layer are combined, and the insulating gap of the irrigated portion is provided with a lead insulation gap and a guide pin gap, and the insulating gap is formed on the Between each of the leading feet and each of the leading toes, the welding portion is provided with a plurality of guiding legs and an insulating gap, the insulating gap of the welded portion is filled with an insulating material, and the insulating gap of the welded portion is formed on each of the leading toes Between each of the guide feet and the guide legs of the irrigating portion and the guide legs of the welded portion Correspond to each other, so that the plant under the crystal portion and the adhesive layer was bonded tightly welded portion.
且該複合導線架結構亦可由植晶層、黏接層及焊接層組合而成，又該複合導線架結構係以複數個單體排列所形成，單體與單體之間係設有單體間隙，又該單體間隙係設有單體植晶間隙、單體貼帶間隙及焊接層單體間隙，又該焊接層單體間隙係填充有絕緣材，該單體係設有植晶部、 黏接部及焊接部，該植晶部係設有複數個導腳及一絕緣間隙，該植晶部之各導腳係設有複數個導電通孔，又該植晶部之各導腳係依序由頂端向下設有上金屬層、上黏著層、貼帶層、下黏著層及下金屬層組合而成，該植晶部之絕緣間隙係設有導腳絕緣間隙及導腳貼帶間隙，又該植晶部之絕緣間隙係形成於各導腳尖與各導腳尖之間，該焊接部係設有複數個導腳及一絕緣間隙，該焊接部之絕緣間隙係填充有絕緣材，又該焊接部之絕緣間隙係形成於各導腳尖與各導腳尖之間，該黏接部係位於植晶部與焊接部之間，又植晶部之各導腳與焊接部之各導腳上下相互對應，使得植晶部與焊接部緊密結合而成；此外，該黏接部係可為導電膠或於該黏接部係設有上黏接部及下黏接部，又該上黏接部係位於植晶部之導腳下方，及該下黏接部係位於焊接部之導腳上方，又該黏接部係以上黏接部及下黏接部共晶結合而成。The composite lead frame structure can also be formed by a combination of a seed layer, an adhesive layer and a solder layer, and the composite lead frame structure is formed by a plurality of monomer arrangements, and a monomer is arranged between the monomer and the monomer. The gap, the single cell gap is provided with a single crystallographic gap, a single cell gap, and a single layer of the solder layer, and the single layer gap of the solder layer is filled with an insulating material, and the single system is provided with a crystallizing portion. , The bonding portion and the soldering portion are provided with a plurality of guiding legs and an insulating gap, wherein each guiding leg of the irrigating portion is provided with a plurality of conductive through holes, and each guiding leg of the irrigating portion The upper metal layer, the upper adhesive layer, the adhesive layer, the lower adhesive layer and the lower metal layer are sequentially arranged from the top, and the insulating gap of the implanted portion is provided with the lead insulation gap and the guide pin tape. a gap, and an insulating gap of the pedestal portion is formed between each of the leading toe and each of the guiding feet, the welding portion is provided with a plurality of guiding legs and an insulating gap, and the insulating gap of the welded portion is filled with an insulating material, The insulating gap of the soldering portion is formed between each of the guiding pin tips and the respective guiding feet, and the bonding portion is located between the seeding portion and the soldering portion, and each of the guiding legs of the seeding portion and the guiding portion of the soldering portion The upper and lower parts correspond to each other, so that the physico-crystal part and the soldering part are closely combined; in addition, the adhesive part can be a conductive adhesive or an upper adhesive part and a lower adhesive part are attached to the adhesive part, and the upper adhesive layer The connecting portion is located below the guiding leg of the phytolithal portion, and the lower adhesive portion is located above the guiding leg of the welding portion, and Based bonding portion above the lower portion, and eutectic bonding portion bonded.
其中，該植晶部及焊接部之複數個導腳數係大於二時，該植晶部各導腳與各導腳之間設有導腳絕緣間距及導腳貼帶間距，該焊接部各導腳與各導腳之間係設有絕緣間距，該焊接部之絕緣間距係填充有絕緣材。Wherein, when the number of the plurality of guiding pins of the irrigating portion and the soldering portion is greater than two, the spacing between the guiding legs and the guiding legs is provided between the guiding legs of the irrigating portion and the guiding legs, and the welding portions are respectively An insulating pitch is formed between the lead pin and each of the lead pins, and the insulating pitch of the soldering portion is filled with an insulating material.
其中，該導腳貼帶間距係填充有醯胺化合物(Polyimide,PI)。The lead tape is filled with a polyamide compound (Polyimide, PI).
其中，該單體貼帶間隙及導腳貼帶間隙係設為醯胺化合物(Polyimide,PI)。Wherein, the monomer adhesive tape gap and the lead tape adhesive gap are set as a liminamide compound (PI).
其中，該貼帶層為醯胺化合物(Polyimide,PI)。Wherein, the adhesive layer is a phthalamide compound (Polyimide, PI).
其中，該上黏著層及下黏著層係為絕緣膠。Wherein, the upper adhesive layer and the lower adhesive layer are insulating adhesives.
其中，植晶層之複數個導腳係為銅箔。Wherein, the plurality of guiding legs of the seed layer are copper foil.
其中，焊接層之複數個導腳係為銅、鐵或鋁材。Wherein, the plurality of guiding legs of the soldering layer are copper, iron or aluminum.
其中，該植晶部的複數個導腳上方係設置有電鍍層；該焊接部的複數個導腳下方係設置有電鍍層，該電鍍層係選自金、銀、鎳、鉻、 鈀、鋅中之其中一種或多種。Wherein, a plating layer is disposed on a plurality of guiding legs of the irrigating portion; a plating layer is disposed under the plurality of guiding legs of the soldering portion, and the plating layer is selected from the group consisting of gold, silver, nickel, chromium, One or more of palladium and zinc.
其中，該植晶部之絕緣間隙的寬度小於、大於或等於該焊接部之絕緣間隙的寬度。Wherein, the width of the insulating gap of the lithographic portion is less than, greater than or equal to the width of the insulating gap of the solder portion.
其中，複數個導電通孔內係填充有金、銀、銅或鋁。Wherein, the plurality of conductive vias are filled with gold, silver, copper or aluminum.
此外，該複合導線架結構中係可增設有植晶部之銲墊與焊接部之銲墊，該複合導線架結構係由植晶層及焊接層組合而成，又該複合導線架結構係以複數個單體排列所形成，單體與單體之間係設有單體間隙，又該單體間隙係設有單體植晶間隙、單體貼帶間隙及焊接層單體間隙，又該焊接層單體間隙係填充有絕緣材，該單體係設有植晶部及焊接部，該植晶部係設有複數個導腳、絕緣間隙及一銲墊，該植晶部之各導腳係設有複數個導電通孔，該植晶部之銲墊係設有複數個導熱通孔，又該銲墊係設置於各導腳之間，又該植晶部之各導腳及銲墊係依序由頂端向下設有上金屬層、上黏著層、貼帶層及下黏著層組合而成，該植晶部之絕緣間隙係設有導腳絕緣間隙及導腳貼帶間隙，又該植晶部之絕緣間隙係形成於植晶部之銲墊與各導腳之間，該焊接部係設有複數個導腳、絕緣間隙及一銲墊，該銲墊係設置於各導腳之間，該焊接部之絕緣間隙係形成於焊接部之銲墊與各導腳之間，又該焊接部之絕緣間隙係填充有絕緣材，又該植晶部之各導腳與焊接部之各導腳上下相互對應，且該植晶部之銲墊與焊接部之銲墊上下相互對應，使得植晶部之下黏著層與焊接部緊密結合而成。In addition, in the composite lead frame structure, a solder pad of the irrigating portion and a solder pad of the soldering portion may be added, and the composite lead frame structure is formed by combining a seed layer and a solder layer, and the composite lead frame structure is a plurality of monomer arrangements are formed, a monomer gap is provided between the monomer and the monomer, and the monomer gap is provided with a monomer crystallographic gap, a monomer adhesion gap, and a solder layer monomer gap, and The single layer gap of the soldering layer is filled with an insulating material, and the single system is provided with a seeding portion and a soldering portion, wherein the seeding portion is provided with a plurality of guiding legs, an insulating gap and a pad, and the guiding portions of the seeding portion are The foot line is provided with a plurality of conductive through holes, the solder pads of the irrigated portion are provided with a plurality of thermal conductive through holes, and the pads are disposed between the respective lead legs, and the lead pins and the soldering portions of the crystallization portion are further The pad is sequentially formed by a combination of an upper metal layer, an upper adhesive layer, a tape layer and a lower adhesive layer. The insulating gap of the crystallizing portion is provided with a lead insulation gap and a guide pin gap. The insulating gap of the irrigated portion is formed between the pad of the phytolith portion and each of the lead legs, and the soldering portion is provided with a plurality of a soldering gap is formed between each of the guiding legs, and an insulating gap of the soldering portion is formed between the soldering pad of the soldering portion and each of the guiding legs, and the insulating gap of the soldering portion is Filled with an insulating material, and each of the guiding legs of the illuminating portion and the guiding legs of the welded portion correspond to each other, and the pads of the crystallization portion and the pads of the soldering portion correspond to each other up and down, so that the underlying portion of the crystallization portion is adhered The layer is tightly combined with the welded portion.
該複合導線架結構中係可增設有植晶部之銲墊與焊接部之銲墊，複合導線架結構由植晶層、黏接層及焊接層組合而成，又該複合導線架結構係以複數個單體排列所形成，單體與單體之間係設有單體間隙，又該單體間隙係設有單體植晶間隙、單體貼帶間隙及焊接層單體間隙，又該焊接層單體間隙係填充有絕緣材，該單體係設有植晶部、黏接部及焊接 部，該植晶部係設有複數個導腳、絕緣間隙及一銲墊，該植晶部之各導腳係設有複數個導電通孔，該植晶部之銲墊係設有複數個導熱通孔，又該銲墊係設置於各導腳之間，又該植晶部之各導腳及銲墊係依序由頂端向下設有上金屬層、上黏著層、貼帶層、下黏著層及下金屬層組合而成，該植晶部之絕緣間隙係設有導腳絕緣間隙及導腳貼帶間隙，又該植晶部之絕緣間隙係形成於植晶部之銲墊與各導腳之間，該焊接部係設有複數個導腳、絕緣間隙及一銲墊，該銲墊係設置於各導腳之間，該焊接部之絕緣間隙係形成於焊接部之銲墊與各導腳之間，又該焊接部之絕緣間隙係填充有絕緣材，該黏接部係位於植晶部與焊接部之間，又植晶部之各導腳與焊接部之各導腳上下相互對應，且該植晶部之銲墊與焊接部之銲墊上下相互對應，使得植晶部與焊接部組合而成；此外，該黏接部係可為導電膠或於該黏接部係設有上黏接部及下黏接部，又該上黏接部係位於植晶部之導腳下方，及該下黏接部係位於焊接部之導腳上方，又該黏接部係以上黏接部及下黏接部共晶結合而成。In the composite lead frame structure, a solder pad of the lithography portion and a solder pad of the soldering portion may be added, and the composite lead frame structure is formed by a combination of a seed layer, an adhesive layer and a solder layer, and the composite lead frame structure is a plurality of monomer arrangements are formed, a monomer gap is provided between the monomer and the monomer, and the monomer gap is provided with a monomer crystallographic gap, a monomer adhesion gap, and a solder layer monomer gap, and The welding layer monomer gap is filled with an insulating material, and the single system is provided with a planting portion, a bonding portion and welding. The pedestal portion is provided with a plurality of guiding legs, an insulating gap and a soldering pad. Each of the guiding portions of the irrigating portion is provided with a plurality of conductive through holes, and the pads of the irrigating portion are provided with a plurality of pads a heat conducting through hole, wherein the soldering pad is disposed between each of the guiding legs, and each of the guiding legs and the bonding pad of the crystallization portion is sequentially provided with an upper metal layer, an upper adhesive layer, a tape layer, and The lower adhesive layer and the lower metal layer are combined, and the insulating gap of the irrigated portion is provided with a lead insulation gap and a guide pin gap, and the insulating gap of the crystallization portion is formed on the pad of the phytolith Between each lead, the soldering portion is provided with a plurality of guiding legs, an insulating gap and a solder pad. The soldering pad is disposed between the guiding legs, and the insulating gap of the soldering portion is formed on the soldering pad. Between the lead legs and the insulating portion, the insulating gap is filled with an insulating material, and the bonding portion is located between the crystallization portion and the soldering portion, and each of the guiding legs of the illuminating portion and the guiding portion of the soldering portion The upper and lower sides correspond to each other, and the pad of the irrigated portion and the pad of the soldering portion correspond to each other up and down, so that the phytolith portion and the welded portion are combined; In addition, the adhesive portion may be a conductive adhesive or may have an upper adhesive portion and a lower adhesive portion on the adhesive portion, and the upper adhesive portion is located under the guide leg of the crystallized portion, and the lower adhesive portion The connecting portion is located above the guiding leg of the welding portion, and the bonding portion is formed by eutectic bonding of the above bonding portion and the lower bonding portion.
其中，該植晶部及焊接部之複數個導腳數係大於二時，該植晶部各導腳與各導腳之間設有導腳絕緣間距及導腳貼帶間距，該焊接部各導腳與各導腳之間係設有絕緣間距，該焊接部之絕緣間距係填充有絕緣材，使該複合導線架結構之機械耐久力提高。Wherein, when the number of the plurality of guiding pins of the irrigating portion and the soldering portion is greater than two, the spacing between the guiding legs and the guiding legs is provided between the guiding legs of the irrigating portion and the guiding legs, and the welding portions are respectively An insulating pitch is formed between the lead pin and each of the lead pins, and the insulating pitch of the soldering portion is filled with an insulating material to improve the mechanical durability of the composite lead frame structure.
其中，該導腳貼帶間距係填充有醯胺化合物(Polyimide,PI)。The lead tape is filled with a polyamide compound (Polyimide, PI).
其中，該貼帶層為醯胺化合物(Polyimide,PI)。Wherein, the adhesive layer is a phthalamide compound (Polyimide, PI).
其中，該單體貼帶間隙及導腳貼帶間隙係設為醯胺化合物(Polyimide,PI)。Wherein, the monomer adhesive tape gap and the lead tape adhesive gap are set as a liminamide compound (PI).
其中，該上黏著層及下黏著層係為絕緣膠。Wherein, the upper adhesive layer and the lower adhesive layer are insulating adhesives.
其中，植晶層之複數個導腳及銲墊係為銅箔。Wherein, the plurality of lead pins and pads of the seed layer are copper foil.
其中，焊接層之複數個導腳及銲墊為銅、鐵或鋁材。Wherein, the plurality of lead pins and pads of the solder layer are copper, iron or aluminum.
其中，該植晶部的複數個導腳及銲墊上方係設置有電鍍層；該焊接部的複數個導腳及銲墊下方係設置有電鍍層，該電鍍層係選自金、銀、鎳、鉻、鈀、鋅中之其中一種或多種。Wherein, the plurality of lead pins and the solder pads of the irrigating portion are provided with a plating layer; the plurality of lead pins and the underlying pads of the soldering portion are provided with a plating layer selected from the group consisting of gold, silver and nickel. One or more of chromium, palladium and zinc.
其中，該植晶部之絕緣間隙的寬度小於、大於或等於該焊接部之絕緣間隙的寬度。Wherein, the width of the insulating gap of the lithographic portion is less than, greater than or equal to the width of the insulating gap of the solder portion.
其中，複數個導電通孔內係填充有金、銀、銅或鋁。Wherein, the plurality of conductive vias are filled with gold, silver, copper or aluminum.
其中，複數個導熱通孔內係填充有金、銀、銅或鋁。Wherein, the plurality of thermal vias are filled with gold, silver, copper or aluminum.
就本創作所述複合導線架結構，係可應用於覆晶、打線等LED或IC半導體封裝技術之產品，該複合導線架結構之導電通孔，使得該複合導線架結構之導電性佳、導熱性佳；而設有導熱通孔時，更能提升散熱之功能；又於複合導線架之焊接部的絕緣間隙及絕緣間距填充有絕緣材，使得機械耐久力高；又該植晶部與焊接部之導腳間的絕緣間隙及絕緣間距皆為細小，使得複合導線架產品可多腳化，又達到封裝後的產品具有小型化之效益。The composite lead frame structure of the present invention can be applied to products of LED or IC semiconductor packaging technology such as flip chip and wire bonding, and the conductive through hole of the composite lead frame structure makes the composite lead frame structure have good conductivity and heat conduction. Good performance; when the thermal conduction through hole is provided, the function of heat dissipation can be further improved; and the insulation gap and the insulation pitch of the welded portion of the composite lead frame are filled with the insulating material, so that the mechanical durability is high; and the planting portion and the welding The insulation gap and the insulation spacing between the guide legs of the part are small, so that the composite lead frame product can be multi-legged, and the packaged product has the advantage of miniaturization.
為期許本創作之目的、功效、特徵及結構能夠有更為詳盡之了解，茲舉較佳實施例並配合圖式說明如後。For a more detailed understanding of the purpose, function, features and structure of the present invention, the preferred embodiments are described in conjunction with the drawings.
1‧‧‧複合導線架結構1‧‧‧Composite lead frame structure
10‧‧‧植晶層10‧‧‧Sky layer
11‧‧‧焊接層11‧‧‧welding layer
12‧‧‧單體12‧‧‧Single
120‧‧‧植晶部120‧‧‧The Department of Phytolithology
1200‧‧‧導腳1200‧‧‧ lead
1201‧‧‧絕緣間隙1201‧‧‧Insulation gap
12010‧‧‧導腳絕緣間隙12010‧‧‧Insulation gap
12011‧‧‧導腳貼帶間隙12011‧‧‧ Guide pin with gap
1202‧‧‧導電通孔1202‧‧‧ conductive through hole
1203‧‧‧上金屬層1203‧‧‧Upper metal layer
1204‧‧‧上黏著層1204‧‧‧Upper adhesive layer
1205‧‧‧貼帶層1205‧‧‧ tape layer
1206‧‧‧下黏著層1206‧‧‧Under the adhesive layer
121‧‧‧焊接部121‧‧‧Weld Department
1210‧‧‧導腳1210‧‧‧ lead
1211‧‧‧絕緣間隙1211‧‧‧Insulation gap
13‧‧‧單體間隙13‧‧‧Single gap
130‧‧‧單體植晶間隙130‧‧‧Single planting gap
131‧‧‧單體貼帶間隙131‧‧‧Single tape gap
132‧‧‧焊接層單體間隙132‧‧‧welding layer monomer gap
14‧‧‧電鍍層14‧‧‧Electroplating
2‧‧‧複合導線架結構2‧‧‧Composite lead frame structure
20‧‧‧植晶層20‧‧‧The seed layer
21‧‧‧黏接層21‧‧‧Adhesive layer
22‧‧‧焊接層22‧‧‧welding layer
23‧‧‧單體23‧‧‧Single
230‧‧‧植晶部230‧‧‧The Department of Phytolithology
2300‧‧‧導腳2300‧‧‧ lead
2301‧‧‧絕緣間隙2301‧‧‧Insulation gap
23010‧‧‧導腳絕緣間隙23010‧‧‧Insulation gap
23011‧‧‧導腳貼帶間隙23011‧‧‧ Guide pin with gap
2302‧‧‧導電通孔2302‧‧‧Electrical through hole
2303‧‧‧上金屬層2303‧‧‧Upper metal layer
2304‧‧‧上黏著層2304‧‧‧Upper adhesive layer
2305‧‧‧貼帶層2305‧‧‧ tape layer
2306‧‧‧下黏著層2306‧‧‧Under the adhesive layer
2307‧‧‧下金屬層2307‧‧‧Under metal layer
231‧‧‧黏接部231‧‧‧ Bonding Department
2310‧‧‧上黏接部2310‧‧‧Upper bonding
2311‧‧‧下黏接部2311‧‧‧Bottom bonding
232‧‧‧焊接部232‧‧‧Weld Department
2320‧‧‧導腳2320‧‧‧ lead
2321‧‧‧絕緣間隙2321‧‧‧Insulation gap
24‧‧‧單體間隙24‧‧‧Single gap
240‧‧‧單體植晶間隙240‧‧‧Single planting gap
241‧‧‧單體貼帶間隙241‧‧‧Single tape gap
242‧‧‧焊接層單體間隙242‧‧‧welding layer monomer gap
25‧‧‧電鍍層25‧‧‧Electroplating
3‧‧‧複合導線架結構3‧‧‧Composite lead frame structure
30‧‧‧植晶層30‧‧‧Sky layer
31‧‧‧焊接層31‧‧‧welding layer
32‧‧‧單體32‧‧‧Single
320‧‧‧植晶部320‧‧‧The Department of Phytolithology
3200‧‧‧導腳3200‧‧‧ lead
3201‧‧‧絕緣間隙3201‧‧‧Insulation gap
32010‧‧‧導腳絕緣間隙32010‧‧‧Insulation gap
32011‧‧‧導腳貼帶間隙32011‧‧‧ Guide pin with gap
3202‧‧‧導電通孔3202‧‧‧ conductive through hole
3203‧‧‧上金屬層3203‧‧‧Upper metal layer
3204‧‧‧上黏著層3204‧‧‧Upper adhesive layer
3205‧‧‧貼帶層3205‧‧‧ tape layer
3206‧‧‧下黏著層3206‧‧‧Under the adhesive layer
3207‧‧‧導腳絕緣間距3207‧‧‧Insulation spacing
3208‧‧‧導腳貼帶間距3208‧‧‧Leading strap spacing
321‧‧‧焊接部321‧‧‧Weld Department
3210‧‧‧導腳3210‧‧‧ lead
3211‧‧‧絕緣間隙3211‧‧‧Insulation gap
3212‧‧‧絕緣間距3212‧‧‧Insulation spacing
33‧‧‧單體間隙33‧‧‧Single gap
330‧‧‧單體植晶間隙330‧‧‧Single planting gap
331‧‧‧單體貼帶間隙331‧‧‧Single tape gap
332‧‧‧焊接層單體間隙332‧‧‧welding layer monomer gap
34‧‧‧電鍍層34‧‧‧Electroplating
4‧‧‧複合導線架結構4‧‧‧Composite lead frame structure
40‧‧‧植晶層40‧‧‧Sky layer
41‧‧‧黏接層41‧‧‧Adhesive layer
42‧‧‧焊接層42‧‧‧welding layer
43‧‧‧單體43‧‧‧Single
430‧‧‧植晶部430‧‧‧The Department of Phytolithology
4300‧‧‧導腳4300‧‧‧ lead
4301‧‧‧絕緣間隙4301‧‧‧Insulation gap
43010‧‧‧導腳絕緣間隙43010‧‧‧Insulation gap
43011‧‧‧導腳貼帶間隙43011‧‧‧ Guide pin with gap
4302‧‧‧導電通孔4302‧‧‧ conductive through hole
4303‧‧‧上金屬層4303‧‧‧Upper metal layer
4304‧‧‧上黏著層4304‧‧‧Upper adhesive layer
4305‧‧‧貼帶層4305‧‧‧ tape layer
4306‧‧‧下黏著層4306‧‧‧Under the adhesive layer
4307‧‧‧下金屬層4307‧‧‧Under metal layer
4308‧‧‧導腳絕緣間距4308‧‧‧Insulation spacing
4309‧‧‧導腳貼帶間距4309‧‧‧ Guide pin spacing
431‧‧‧黏接部431‧‧‧ Bonding Department
4310‧‧‧上黏接部4310‧‧‧Upper bonding
4311‧‧‧下黏接部4311‧‧‧Under the adhesive joint
432‧‧‧焊接部432‧‧‧Welding Department
4320‧‧‧導腳4320‧‧‧ lead
4321‧‧‧絕緣間隙4321‧‧‧Insulation gap
4322‧‧‧絕緣間距4322‧‧‧Insulation spacing
44‧‧‧單體間隙44‧‧‧Single gap
440‧‧‧單體植晶間隙440‧‧‧Single planting gap
441‧‧‧單體貼帶間隙441‧‧‧Single tape gap
442‧‧‧焊接層單體間隙442‧‧‧welding layer monomer gap
45‧‧‧電鍍層45‧‧‧Electroplating
5‧‧‧複合導線架結構5‧‧‧Composite lead frame structure
50‧‧‧植晶層50‧‧‧Sky layer
51‧‧‧焊接層51‧‧‧welding layer
52‧‧‧單體52‧‧‧Single
520‧‧‧植晶部520‧‧‧The Department of Phytolithology
5200‧‧‧導腳5200‧‧‧ lead
5201‧‧‧絕緣間隙5201‧‧‧Insulation gap
52010‧‧‧導腳絕緣間隙52010‧‧‧Insulation gap
52011‧‧‧導腳貼帶間隙52011‧‧‧ Guide pin with gap
5202‧‧‧銲墊5202‧‧‧ solder pads
52020‧‧‧導熱通孔52020‧‧‧thermal vias
5203‧‧‧導電通孔5203‧‧‧ conductive through hole
5204‧‧‧上金屬層5204‧‧‧Upper metal layer
5205‧‧‧上黏著層5205‧‧‧Upper adhesive layer
5206‧‧‧貼帶層5206‧‧‧ tape layer
5207‧‧‧下黏著層5207‧‧‧Under the adhesive layer
5208‧‧‧導腳絕緣間距5208‧‧‧Insulation spacing
5209‧‧‧導腳貼帶間距5209‧‧‧Leading strap spacing
521‧‧‧焊接部521‧‧‧Weld Department
5210‧‧‧導腳5210‧‧‧ lead
5211‧‧‧絕緣間隙5211‧‧‧Insulation gap
5212‧‧‧銲墊5212‧‧‧ solder pads
5213‧‧‧絕緣間距5213‧‧‧Insulation spacing
53‧‧‧單體間隙53‧‧‧Single gap
530‧‧‧單體植晶間隙530‧‧‧Single planting gap
531‧‧‧單體貼帶間隙531‧‧‧Single tape gap
532‧‧‧焊接層單體間隙532‧‧‧welding layer monomer gap
54‧‧‧電鍍層54‧‧‧Electroplating
6‧‧‧複合導線架結構6‧‧‧Composite lead frame structure
60‧‧‧植晶層60‧‧‧ irrigated layer
61‧‧‧黏接層61‧‧‧ adhesive layer
62‧‧‧焊接層62‧‧‧welding layer
63‧‧‧單體63‧‧‧single
630‧‧‧植晶部630‧‧‧The Department of Phytolithology
6300‧‧‧導腳6300‧‧‧ lead
6301‧‧‧絕緣間隙6301‧‧‧Insulation gap
63010‧‧‧導腳絕緣間隙63010‧‧‧Insulation gap
63011‧‧‧導腳貼帶間隙63011‧‧‧ Guide pin with gap
6302‧‧‧銲墊6302‧‧‧ solder pads
63020‧‧‧導熱通孔63020‧‧‧thermal via
6303‧‧‧導電通孔6303‧‧‧ conductive through hole
6304‧‧‧上金屬層6304‧‧‧Upper metal layer
6305‧‧‧上黏著層6305‧‧‧Upper adhesive layer
6306‧‧‧貼帶層6306‧‧‧ tape layer
6307‧‧‧下黏著層6307‧‧‧Under the adhesive layer
6308‧‧‧下金屬層6308‧‧‧Under metal layer
631‧‧‧黏接部631‧‧‧ Bonding Department
6310‧‧‧上黏接部6310‧‧‧Upper bonding
6311‧‧‧下黏接部6311‧‧‧Bottom bonding
632‧‧‧焊接部632‧‧‧Welding Department
6320‧‧‧導腳6320‧‧‧ lead
6321‧‧‧絕緣間隙6321‧‧‧Insulation gap
6322‧‧‧銲墊6322‧‧‧ solder pads
6323‧‧‧絕緣間距6323‧‧‧Insulation spacing
64‧‧‧單體間隙64‧‧‧Single gap
640‧‧‧單體植晶間隙640‧‧‧Single planting gap
641‧‧‧單體貼帶間隙641‧‧‧Single tape gap
642‧‧‧焊接層單體間隙642‧‧‧welding layer monomer gap
65‧‧‧導腳絕緣間距65‧‧‧Insulation spacing
66‧‧‧導腳貼帶間距66‧‧‧Leading strap spacing
67‧‧‧電鍍層67‧‧‧Electroplating
7‧‧‧複合導線架結構7‧‧‧Composite lead frame structure
70‧‧‧植晶層70‧‧‧The seed layer
71‧‧‧植晶部71‧‧‧The Department of Phytolithology
72‧‧‧焊接部72‧‧‧Weld Department
73‧‧‧IC晶片73‧‧‧IC chip
74‧‧‧金屬層74‧‧‧metal layer
75‧‧‧金屬線材75‧‧‧Metal wire
76‧‧‧導腳76‧‧‧ lead
77‧‧‧銲墊77‧‧‧ solder pads
8‧‧‧軟性基板8‧‧‧Soft substrate
80‧‧‧軟性基材80‧‧‧Soft substrate
81‧‧‧上金屬層81‧‧‧Upper metal layer
82‧‧‧黏著層82‧‧‧Adhesive layer
83‧‧‧金屬電鍍層83‧‧‧metal plating
84‧‧‧IC84‧‧‧IC
9‧‧‧銅金屬導線架9‧‧‧Copper metal lead frame
90‧‧‧導腳90‧‧‧ lead
91‧‧‧金屬電鍍層91‧‧‧metal plating
第1圖：習知軟性基板示意圖；第2圖：習知銅金屬導線架示意圖；第3圖：本創作第一實施示意圖(一)；第4圖：本創作第一實施示意圖(二)； 第5圖：本創作第二實施示意圖(一)；第6圖：本創作第三實施示意圖(一)；第7圖：本創作第三實施示意圖(二)；第8圖：本創作第四實施示意圖(一)；第9圖：本創作第五實施示意圖(一)；第10圖：本創作第五實施示意圖(二)；第11圖：本創作第五實施示意圖(三)；第12圖：本創作第六實施示意圖(一)；第13圖：本創作第六實施示意圖(二)；第14圖：本創作第七實施示意圖。Figure 1: Schematic diagram of a conventional soft substrate; Figure 2: Schematic diagram of a conventional copper metal lead frame; Figure 3: Schematic diagram of the first implementation of the creation (1); Figure 4: Schematic diagram of the first implementation of the creation (2); Figure 5: Schematic diagram of the second implementation of this creation (1); Figure 6: Schematic diagram of the third implementation of this creation (1); Figure 7: Schematic diagram of the third implementation of this creation (2); Figure 8: The fourth creation of this creation Schematic diagram of implementation (1); Figure 9: Schematic diagram of the fifth implementation of the creation (1); Figure 10: Schematic diagram of the fifth implementation of the creation (II); Figure 11: Schematic diagram of the fifth implementation of the creation (3); Figure: Schematic diagram of the sixth implementation of this creation (1); Figure 13: Schematic diagram of the sixth implementation of the creation (2); Figure 14: Schematic diagram of the seventh implementation of the creation.
第一實施例：本實施例係以LED覆晶封裝之複合導線架為例，且植晶層為單面金屬層。First Embodiment: This embodiment is an example of a composite lead frame with an LED flip chip package, and the seed layer is a single-sided metal layer.
首先，請參閱第3圖及第4圖；由圖可知，本創作所述複合導線架結構1，主要係由植晶層10及焊接層11組合而成。First, please refer to FIG. 3 and FIG. 4; it can be seen from the figure that the composite lead frame structure 1 of the present invention is mainly composed of a combination of a seed layer 10 and a solder layer 11.
所述複合導線架結構1係由植晶層10及焊接層11組合而成，又該複合導線架結構1係以複數個單體12排列所形成，單體12與單體12之間係設有單體間隙13，又該單體間隙13係設有單體植晶間隙130、單體貼帶間隙131及焊接層單體間隙132，又該焊接層單體間隙132係填充有絕緣材，該單體12係設有植晶部120及焊接部121，該植晶部120係設有複數個導腳1200及一絕緣間隙1201，該植晶部120之各導腳1200係設有複數個導電通孔1202，又該植晶部120之各導腳1200係依序由頂端向下設有上金屬層1203、上黏著層1204、貼帶層1205及下黏著層1206組合 而成，該植晶部120之絕緣間隙1201係設有導腳絕緣間隙12010及導腳貼帶間隙12011，又該絕緣間隙1201係形成於各導腳尖與各導腳尖之間，該焊接部121係設有複數個導腳1210及一絕緣間隙1211，該焊接部121之絕緣間隙1211係填充有絕緣材，又該焊接部121之絕緣間隙1211係形成於各導腳尖與各導腳尖之間，又該植晶部120之各導腳1200與焊接部121之各導腳1210上下相互對應，使得植晶部120之下黏著層1206與焊接部121緊密結合而成。The composite lead frame structure 1 is formed by combining a seed layer 10 and a solder layer 11, and the composite lead frame structure 1 is formed by arranging a plurality of cells 12, and the unit 12 and the unit 12 are arranged. There is a cell gap 13 , and the cell gap 13 is provided with a single crystallographic gap 130 , a single cell gap 131 and a solder layer cell gap 132 , and the solder layer cell gap 132 is filled with an insulating material. The illuminating portion 120 is provided with a plurality of guiding legs 1200 and an insulating gap 1201. The guiding legs 1200 of the irrigating portion 120 are provided with a plurality of pins 1200. The conductive vias 1202, and the guiding legs 1200 of the irrigating portion 120 are sequentially provided with a combination of an upper metal layer 1203, an upper adhesive layer 1204, an adhesive layer 1205 and a lower adhesive layer 1206 from the top end. The insulating gap 1201 of the irrigating portion 120 is provided with a lead insulating gap 12010 and a lead strap gap 12011. The insulating gap 1201 is formed between each leading tip and each guiding tip. The soldering portion 121 is formed. The insulating pin 1211 is filled with an insulating material, and the insulating gap 1211 of the soldering portion 121 is formed between each guiding tip and each guiding tip. Further, each of the lead pins 1200 of the irrigating portion 120 and the lead pins 1210 of the soldering portion 121 correspond to each other up and down, so that the adhesive layer 1206 under the irrigating portion 120 is closely combined with the solder portion 121.
所述該上黏著層1204及下黏著層1206係為絕緣膠，該植晶層10之複數個導腳1200係為銅箔，該焊接層11之複數個導腳1210係為銅、鐵或鋁材，該植晶部120的複數個導腳1200上方係設置有電鍍層14，該焊接部121的複數個導腳1210下方係設置有電鍍層14，該電鍍層14係選自金、銀、鎳、鉻、鈀、鋅中之其中一種或多種，其中，該植晶部10之絕緣間隙1201的寬度小於、大於或等於該焊接部121之絕緣間隙1211的寬度，而複數個導電通孔1202內係填充有金、銀、銅或鋁。The upper adhesive layer 1204 and the lower adhesive layer 1206 are insulating adhesives. The plurality of lead pins 1200 of the seed layer 10 are copper foil, and the plurality of lead pins 1210 of the solder layer 11 are copper, iron or aluminum. The plating layer 14 is disposed on the plurality of guiding pins 1200 of the irrigating portion 120. The plating layer 14 is disposed under the plurality of guiding pins 1210 of the soldering portion 121. The plating layer 14 is selected from the group consisting of gold and silver. One or more of nickel, chromium, palladium, and zinc, wherein the width of the insulating gap 1201 of the crystallizing portion 10 is less than, greater than or equal to the width of the insulating gap 1211 of the soldering portion 121, and the plurality of conductive vias 1202 The interior is filled with gold, silver, copper or aluminum.
其中，該貼帶層1205係以為醯胺化合物(Polyimide,PI)為製材，且單體貼帶間隙131及導腳貼帶間隙12011係設為醯胺化合物(Polyimide,PI)(如第4圖所示)。The tape layer 1205 is made of a phthalamide compound (Polyimide, PI), and the monomer tape gap 131 and the foot tape gap 12011 are set as a limamine compound (PI) (as shown in FIG. 4). Shown).
第二實施例：本實施例係以LED覆晶封裝之複合導線架為例，且植晶層為雙面金屬層。Second Embodiment: This embodiment is an example of a composite lead frame with an LED flip chip package, and the seed layer is a double-sided metal layer.
續，請參閱第5圖，並同時參閱第4圖；由圖可知，所述複合導線架結構2係由植晶層20、黏接層21及焊接層22組合而成。Continuing, please refer to FIG. 5 and refer to FIG. 4 at the same time. As can be seen from the figure, the composite lead frame structure 2 is composed of a combination of a seed layer 20, an adhesive layer 21 and a solder layer 22.
該複合導線架結構2係以複數個單體23排列所形成，單體 23與單體23之間係設有單體間隙24，又該單體間隙24係設有單體植晶間隙240、單體貼帶間隙241及焊接層單體間隙242，又該焊接層單體間隙242係填充有絕緣材，該單體23係設有植晶部230、黏接部231及焊接部232，該植晶部230係設有複數個導腳2300及一絕緣間隙2301，該植晶部230之各導腳2300係設有複數個導電通孔2302，又該植晶部230之各導腳2300係依序由頂端向下設有上金屬層2303、上黏著層2304、貼帶層2305、下黏著層2306及下金屬層2307組合而成，該植晶部230之絕緣間隙2301係設有導腳絕緣間隙23010及導腳貼帶間隙23011，又該植晶部230之絕緣間隙2301係形成於各導腳尖與各導腳尖之間，該焊接部232係設有複數個導腳2320及一絕緣間隙2321，該焊接部232之絕緣間隙2321係填充有絕緣材，又該焊接部232之絕緣間隙2321係形成於各導腳尖與各導腳尖之間，該黏接部231係位於植晶部230與焊接部231之間，又植晶部230之各導腳2300與焊接部232之各導腳2320上下相互對應，使得植晶部230與焊接部232緊密結合而成，其中，該黏接部231係可為導電膠或於該黏接部231係設有上黏接部2310及下黏接部2311，又該上黏接部2310係位於植晶部230之導腳2300下方，及該下黏接部2311係位於焊接部232之導腳2320上方，又該黏接部231係以上黏接部2310及下黏接部2311共晶結合而成。The composite lead frame structure 2 is formed by arranging a plurality of cells 23, and the single body A monomer gap 24 is disposed between the 23 and the monomer 23, and the monomer gap 24 is provided with a single crystallographic gap 240, a single-plate contact gap 241, and a solder layer single gap 242, and the solder layer is The body gap 242 is filled with an insulating material, and the single body 23 is provided with a irrigating portion 230, an adhesive portion 231, and a soldering portion 232. The seeding portion 230 is provided with a plurality of guiding legs 2300 and an insulating gap 2301. Each of the guiding legs 2300 of the irrigating portion 230 is provided with a plurality of conductive through holes 2302, and each of the guiding legs 2300 of the illuminating portion 230 is sequentially provided with an upper metal layer 2303, an upper adhesive layer 2304, and a sticker. The strip layer 2305, the lower adhesive layer 2306 and the lower metal layer 2307 are combined. The insulating gap 2301 of the irrigating portion 230 is provided with a lead insulating spacer 23010 and a pin attaching gap 23011, and the insulating portion 230 is insulated. The gap 2301 is formed between each of the guide pin tips and the respective guide pin tips. The soldering portion 232 is provided with a plurality of lead pins 2320 and an insulating gap 2321. The insulating gap 2321 of the soldering portion 232 is filled with an insulating material, and the soldering portion is soldered. The insulating gap 2321 of the portion 232 is formed between each of the guide pins and the respective toe tips, and the bonding portion 231 is located at the crystallizing portion 230. Between the soldering portions 231, the guiding legs 2300 of the irrigating portion 230 and the guiding legs 2320 of the soldering portion 232 are vertically connected to each other, so that the crystallization portion 230 and the soldering portion 232 are tightly combined, wherein the bonding portion 231 is formed. The upper adhesive portion 2310 and the lower adhesive portion 2311 are provided on the adhesive portion 231, and the upper adhesive portion 2310 is located below the guide pin 2300 of the crystallized portion 230, and the lower adhesive layer The connecting portion 2311 is located above the guiding leg 2320 of the soldering portion 232, and the bonding portion 231 is formed by eutectic bonding of the bonding portion 2310 and the lower bonding portion 2311.
所述該上黏著層2304及下黏著層2306係為絕緣膠，該植晶層20之複數個導腳2300係為銅箔，該焊接層22之複數個導腳2320係為銅、鐵或鋁材，該植晶部230的複數個導腳2300上方係設置有電鍍層25，該焊接部232的複數個導腳2320下方 係設置有電鍍層25，該電鍍層25係選自金、銀、鎳、鉻、鈀、鋅中之其中一種或多種，其中，該植晶部230之絕緣間隙2301的寬度小於、大於或等於該焊接部232之絕緣間隙2321的寬度，而複數個導電通孔2302內係填充有金、銀、銅或鋁。The upper adhesive layer 2304 and the lower adhesive layer 2306 are made of insulating glue. The plurality of guiding legs 2300 of the seeding layer 20 are copper foil, and the plurality of guiding legs 2320 of the soldering layer 22 are copper, iron or aluminum. a plurality of lead pins 2300 of the irrigating portion 230 are provided with a plating layer 25 under the plurality of guiding legs 2320 of the soldering portion 232 The plating layer 25 is selected from one or more of gold, silver, nickel, chromium, palladium, and zinc, wherein the width of the insulating gap 2301 of the crystallizing portion 230 is less than, greater than, or equal to The soldering portion 232 has a width of the insulating gap 2321, and the plurality of conductive vias 2302 are filled with gold, silver, copper or aluminum.
其中，該貼帶層2305係以為醯胺化合物(Polyimide,PI)為製材，且單體貼帶間隙241及導腳貼帶間隙23011係設為醯胺化合物(Polyimide,PI)如同第一實施例所示的單體貼帶間隙131及導腳貼帶間隙12011(參閱第4圖)。The tape layer 2305 is made of a phthalamide compound (Polyimide, PI), and the monomer tape gap 241 and the foot tape gap 23011 are set as a limamine compound (PI) as in the first embodiment. The illustrated single cell gap 131 and the lead tape gap 12011 (see Figure 4).
第三實施例：本實施例係以IC覆晶封裝之複合導線架為例，且植晶層為單面金屬層。Third Embodiment: This embodiment is an example of a composite lead frame of an IC flip chip package, and the seed layer is a single-sided metal layer.
請參閱第6圖及第7圖；由圖可知，所述複合導線架結構3係由植晶層30及焊接層31組合而成。Please refer to FIG. 6 and FIG. 7 . It can be seen from the figure that the composite lead frame structure 3 is formed by combining the seed layer 30 and the solder layer 31 .
該複合導線架結構3係以複數個單體32排列所形成，單體32與單體32之間係設有單體間隙33，又該單體間隙33係設有單體植晶間隙330、單體貼帶間隙331及焊接層單體間隙332，又該焊接層單體間隙332係填充有絕緣材，該單體32係設有植晶部320及焊接部321，該植晶部320係設有複數個導腳3200及一絕緣間隙3201，該植晶部320之各導腳3200係設有複數個導電通孔3202，又該植晶部320之各導腳3200係依序由頂端向下設有上金屬層3203、上黏著層3204、貼帶層3205及下黏著層3206組合而成，該植晶部320之絕緣間隙3201係設有導腳絕緣間隙32010及導腳貼帶間隙32011，又該絕緣間隙3201係形成於各導腳尖與各導腳尖之間，該焊接部321係設有複數個導腳3210及一絕緣間隙3211，該焊接部321之絕緣間隙3211係填充有絕緣材，又 該焊接部321之絕緣間隙3211係形成於各導腳尖與各導腳尖之間，又該植晶部320之各導腳3200與焊接部321之各導腳3210上下相互對應，使得植晶部320之下黏著層306與焊接部321緊密結合而成。The composite lead frame structure 3 is formed by arranging a plurality of cells 32, and a monomer gap 33 is arranged between the cells 32 and the cells 32, and the cell gap 33 is provided with a single crystallographic gap 330. The single-layer tape gap 331 and the solder layer single-layer gap 332 are further filled with an insulating material, and the single-body 32 is provided with a irrigating portion 320 and a soldering portion 321 . A plurality of guiding legs 3200 and an insulating gap 3201 are provided. Each of the guiding legs 3200 of the irrigating portion 320 is provided with a plurality of conductive through holes 3202, and the guiding legs 3200 of the irrigating portion 320 are sequentially directed from the top end. The upper metal layer 3203, the upper adhesive layer 3204, the adhesive layer 3205 and the lower adhesive layer 3206 are combined. The insulating gap 3201 of the irrigating portion 320 is provided with a lead insulation gap 32010 and a guide pin gap 32011. The insulating gap 3201 is formed between each of the lead pins and the respective toe tips. The soldering portion 321 is provided with a plurality of guiding legs 3210 and an insulating gap 3211. The insulating gap 3211 of the soldering portion 321 is filled with an insulating material. ,also The insulating gaps 3211 of the soldering portions 321 are formed between the respective guiding feet and the respective guiding feet. Further, the guiding legs 3200 of the crystallizing portion 320 and the guiding legs 3210 of the soldering portion 321 are vertically corresponding to each other, so that the crystallizing portion 320 The adhesive layer 306 is formed in close contact with the welded portion 321 .
所述該上黏著層3204及下黏著層3206係為絕緣膠，該植晶層30之複數個導腳3200係為銅箔，該焊接層31之複數個導腳3210係為銅、鐵或鋁材，該植晶部320的複數個導腳3200上方係設置有電鍍層34，該焊接部321的複數個導腳3210下方係設置有電鍍層34，該電鍍層34係選自金、銀、鎳、鉻、鈀、鋅中之其中一種或多種，其中，該植晶部320之絕緣間隙3201的寬度小於、大於或等於該焊接部321之絕緣間隙3211的寬度，而複數個導電通孔3202內係填充有金、銀、銅或鋁。The upper adhesive layer 3204 and the lower adhesive layer 3206 are insulating adhesives. The plurality of guiding legs 3200 of the seeding layer 30 are copper foils, and the plurality of guiding pins 3210 of the soldering layer 31 are copper, iron or aluminum. A plating layer 34 is disposed on the plurality of pins 3200 of the irrigating portion 320. The plating layer 34 is disposed under the plurality of pins 3210 of the soldering portion 321 . The plating layer 34 is selected from the group consisting of gold and silver. One or more of nickel, chromium, palladium, and zinc, wherein the width of the insulating gap 3201 of the crystallizing portion 320 is less than, greater than or equal to the width of the insulating gap 3211 of the soldering portion 321, and the plurality of conductive vias 3202 The interior is filled with gold, silver, copper or aluminum.
其中，該植晶部320及焊接部321之複數個導腳3200、3210數係大於二時，該植晶部320各導腳3200與各導腳3200之間設有導腳絕緣間距3207及導腳貼帶間距3208，該焊接部321各導腳3210與各導腳3210之間係設有絕緣間距3212，該焊接部321之絕緣間距3212係填充有絕緣材。Wherein, when the number of the plurality of guiding legs 3200 and 3210 of the irrigating portion 320 and the soldering portion 321 is greater than two, the guiding distance between the guiding legs 3200 and the guiding legs 3200 of the irrigating portion 320 is 3207 and guiding. The gap between the legs 3208 is such that an insulating pitch 3212 is formed between each of the lead legs 3210 and each of the lead legs 3210. The insulating pitch 3212 of the soldering portion 321 is filled with an insulating material.
其中，該貼帶層3205係以醯胺化合物(Polyimide,PI)為製材，且該導腳貼帶間距3208、單體貼帶間隙331及導腳貼帶間隙32011係係填充有醯胺化合物(Polyimide,PI)(如第7圖所示)。The tape layer 3205 is made of a bismuth compound (Polyimide, PI), and the pin spacing 3208, the monomer tape gap 331 and the foot tape gap 32011 are filled with a guanamine compound ( Polyimide, PI) (as shown in Figure 7).
第四實施例：本實施例係以IC覆晶封裝之複合導線架為例，且植晶層為雙面金屬層。Fourth Embodiment: This embodiment is an example of a composite lead frame with an IC flip chip package, and the seed layer is a double-sided metal layer.
請參閱第8圖，並同時參閱第7圖；由圖可知，所述複合導線架結構4係由植晶層40、黏接層41及焊接層42組合而成。Please refer to FIG. 8 and refer to FIG. 7 at the same time. As can be seen from the figure, the composite lead frame structure 4 is composed of a combination of a seed layer 40, an adhesive layer 41 and a solder layer 42.
該複合導線架結構4係以複數個單體43排列所形成，單體43與單體43之間係設有單體間隙44，又該單體間隙44係設有單體植晶間隙440、單體貼帶間隙441及焊接層單體間隙442，又該焊接層單體間隙442係填充有絕緣材，該單體43係設有植晶部430、黏接部431及焊接部432，該植晶部430係設有複數個導腳4300及一絕緣間隙4301，該植晶部430之各導腳4300係設有複數個導電通孔4302，又該植晶部之430各導腳4300係依序由頂端向下設有上金屬層4303、上黏著層4304、貼帶層4305、下黏著層4306及下金屬層4307組合而成，該植晶部430之絕緣間隙4301係設有導腳絕緣間隙43010及導腳貼帶間隙43011，又該植晶部430之絕緣間隙4301係形成於各導腳尖與各導腳尖之間，該焊接部432係設有複數個導腳4320及一絕緣間隙4321，該焊接部432之絕緣間隙4321係填充有絕緣材，又該焊接部432之絕緣間隙4321係形成於各導腳尖與各導腳尖之間，該黏接部431係位於植晶部430與焊接部432之間，又植晶部430之各導腳4300與焊接部432之各導腳4320上下相互對應，使得植晶部430與焊接部432緊密結合而成，其中，該黏接部431係可為導電膠或於該黏接部431係設有上黏接部4310及下黏接部4311，又該上黏接部4310係位於植晶部430之導腳4300下方，及該下黏接部4311係位於焊接部432之導腳4320上方，又該黏接部431係以上黏接部4310及下黏接部4311共晶結合而成。The composite lead frame structure 4 is formed by arranging a plurality of cells 43 , and a monomer gap 44 is disposed between the monomer 43 and the monomer 43 , and the cell gap 44 is provided with a single crystal implantation gap 440 . The single-layer tape gap 441 and the solder layer single-layer gap 442 are filled with an insulating material, and the single-body 43 is provided with a crystal-plating portion 430, an adhesive portion 431, and a solder portion 432. The pedestal portion 430 is provided with a plurality of guiding legs 4300 and an insulating gap 4301. The guiding legs 4300 of the irrigating portion 430 are provided with a plurality of conductive through holes 4302, and the guiding portions 4300 of the 430 are further The upper metal layer 4303, the upper adhesive layer 4304, the adhesive layer 4305, the lower adhesive layer 4306 and the lower metal layer 4307 are sequentially arranged from the top, and the insulating gap 4301 of the crystallizing portion 430 is provided with a guide pin. The insulating gap 43010 and the lead tape attaching gap 43011, and the insulating gap 4301 of the crystallizing portion 430 is formed between each guiding tip and each guiding tip. The soldering portion 432 is provided with a plurality of guiding legs 4320 and an insulating gap. 4321, the insulating gap 4321 of the soldering portion 432 is filled with an insulating material, and the insulating gap 4321 of the soldering portion 432 is formed on The guiding portion 431 is located between the pedestal portion 430 and the soldering portion 432, and the guiding legs 4300 of the illuminating portion 430 and the guiding legs 4320 of the soldering portion 432 correspond to each other. The bonding portion 430 is formed by being in close contact with the soldering portion 432, wherein the bonding portion 431 is a conductive adhesive or the upper bonding portion 4310 and the lower bonding portion 4311 are disposed on the bonding portion 431. The upper bonding portion 4310 is located below the guiding pin 4300 of the irrigating portion 430, and the lower bonding portion 4311 is located above the guiding leg 4320 of the soldering portion 432, and the bonding portion 431 is bonded to the bonding portion 4310 and the lower bonding portion. The joint portion 4311 is formed by eutectic bonding.
所述該上黏著層4304及下黏著層4306係為絕緣膠，該植晶層40之複數個導腳4300係為銅箔，該焊接層42之複數個導腳4320係為銅、鐵或鋁材，該植晶部430的複數個導腳430 0上方係設置有電鍍層45，該焊接部432的複數個導腳4320下方係設置有電鍍層45，該電鍍層45係選自金、銀、鎳、鉻、鈀、鋅中之其中一種或多種，其中，該植晶部430之絕緣間隙4301的寬度小於、大於或等於該焊接部432之絕緣間隙4321的寬度，而複數個導電通孔4320內係填充有金、銀、銅或鋁。The upper adhesive layer 4304 and the lower adhesive layer 4306 are made of an insulating paste. The plurality of guiding legs 4300 of the seeding layer 40 are copper foil, and the plurality of guiding legs 4320 of the soldering layer 42 are copper, iron or aluminum. a plurality of leads 430 of the pedicle portion 430 A plating layer 45 is disposed on the upper portion of the plurality of leads 4320 of the soldering portion 432. The plating layer 45 is selected from one of gold, silver, nickel, chromium, palladium, and zinc. The width of the insulating gap 4301 of the platter portion 430 is less than, greater than or equal to the width of the insulating gap 4321 of the soldering portion 432, and the plurality of conductive vias 4320 are filled with gold, silver, copper or aluminum.
其中，該植晶部430及焊接部432之複數個導腳4300、4320數係大於二時，該植晶部430各導腳4300與各導腳4300之間設有導腳絕緣間距4308及導腳貼帶間距4309，該焊接部432各導腳4320與各導腳4320之間係設有絕緣間距4322，該焊接部432之絕緣間距4322係填充有絕緣材。Wherein, when the number of the plurality of guiding legs 4300 and 4320 of the crystallization unit 430 and the soldering portion 432 is greater than two, the spacing between the guiding legs 4300 and the guiding legs 4300 of the crystallization unit 430 is 4308 and guiding. The foot straps have a spacing 4309. An insulating pitch 4322 is formed between each of the guiding legs 4320 and the guiding legs 4320 of the soldering portion 432. The insulating pitch 4322 of the soldering portion 432 is filled with an insulating material.
其中，該貼帶層4305係以為醯胺化合物(Polyimide,PI)為製材，且導腳貼帶間距4309、單體貼帶間隙441及導腳貼帶間隙43011係填充有醯胺化合物(Polyimide,PI)如同第三實施例所示的導腳貼帶間距3208、單體貼帶間隙331及導腳貼帶間隙32011(如第6圖所示)。The tape layer 4305 is made of a bismuth compound (Polyimide, PI), and the distance between the lead tapes 4309, the cell tape gap 441, and the foot tape gap 43011 is filled with a guanamine compound (Polyimide, PI) As shown in the third embodiment, the guide tape pitch 3208, the single tape gap 331 and the lead tape gap 32011 (as shown in Fig. 6).
第五實施例：本實施例係以IC覆晶封裝之複合導線架為例，植晶層為單面金屬層，且植晶部及焊接部設有一銲墊。Fifth Embodiment: In this embodiment, a composite lead frame of an IC flip chip package is taken as an example, the seed layer is a single-sided metal layer, and a pad is provided in the irrigating portion and the solder portion.
請參閱第9圖至第11圖；由圖可知，所述複合導線架結構5係由植晶層50及焊接層51組合而成。Please refer to FIG. 9 to FIG. 11 . It can be seen from the figure that the composite lead frame structure 5 is formed by combining the seed layer 50 and the solder layer 51 .
該複合導線架結構5係以複數個單體52排列所形成，單體52與單體52之間係設有單體間隙53，又該單體間隙53係設有單體植晶間隙530、單體貼帶間隙531及焊接層單體間隙532，又該焊接層單體間隙532係填充有絕緣材，該單體52係設有植晶部520及焊接部521，該植晶部520係設有複數個導腳5200、絕緣間隙5 201及一銲墊5202，該植晶部520之各導腳5200係設有複數個導電通孔5203，該植晶部520之銲墊5202係設有複數個導熱通孔52020，又該銲墊5202係設置於各導腳5200之間，又該植晶部520之各導腳5200及銲墊5202係依序由頂端向下設有上金屬層5204、上黏著層5205、貼帶層5206及下黏著層5207組合而成，該植晶520部之絕緣間隙5201係設有導腳絕緣間隙52010及導腳貼帶間隙52011，又該植晶部520之絕緣間隙5201係形成於植晶部520之銲墊5202與各導腳5200之間，該焊接部521係設有複數個導腳5210、絕緣間隙5211及一銲墊5212，該銲墊5212係設置於各導腳5210之間，該焊接部521之絕緣間隙5211係形成於焊接部521之銲墊5212與各導腳5210之間，又該焊接部521之絕緣間隙5211係填充有絕緣材，又該植晶部520之各導腳5200與焊接部521之各導腳5210上下相互對應，且該植晶部520之銲墊5202與焊接部521之銲墊5202上下相互對應，使得植晶部520之下黏著層5207與焊接部521緊密結合而成。The composite lead frame structure 5 is formed by arranging a plurality of cells 52, and a monomer gap 53 is disposed between the cells 52 and the cells 52, and the cell gap 53 is provided with a single crystal implantation gap 530. The single-layer tape gap 531 and the solder layer single-layer gap 532 are further filled with an insulating material, and the single-body 52 is provided with a irrigating portion 520 and a soldering portion 521, and the seeding portion 520 is provided. There are a plurality of guide pins 5200, insulation gap 5 201 and a soldering pad 5202, each of the guiding legs 5200 of the pedestal portion 520 is provided with a plurality of conductive vias 5203, and the bonding pads 5202 of the crystallization portion 520 are provided with a plurality of thermal vias 52020, and the pads 5202 is disposed between each of the lead pins 5200, and the lead pins 5200 and the solder pads 5202 of the irrigating portion 520 are sequentially provided with an upper metal layer 5204, an upper adhesive layer 5205, and an adhesive layer 5206. The lower adhesive layer 5207 is combined, and the insulating gap 5201 of the pedestal 520 is provided with a lead insulating gap 52010 and a lead strap gap 52011, and the insulating gap 5201 of the crystallization portion 520 is formed in the phytolith 520. Between the soldering pad 5202 and each of the guiding legs 5200, the soldering portion 521 is provided with a plurality of guiding pins 5210, an insulating gap 5211 and a solder pad 5212. The soldering pad 5212 is disposed between the guiding pins 5210. The insulating gap 5211 of the portion 521 is formed between the pad 5212 of the soldering portion 521 and each of the lead pins 5210, and the insulating gap 5211 of the soldering portion 521 is filled with an insulating material, and the guiding legs 5200 of the seeding portion 520 are further And the lead pins 5210 of the soldering portion 521 correspond to each other up and down, and the pad 5202 of the crystal implanting portion 520 and the solder pad 5202 of the soldering portion 521 are upper and lower. Mutual correspondence, so that the plant under the crystal portion 520 in close adhesion layer 5207 bonded with the welded portion 521.
所述該上黏著層5204及下黏著層5206係為絕緣膠，該植晶層50之複數個導腳5200及銲墊5202係為銅箔，該焊接層51之複數個導腳5210及銲墊5212為銅、鐵或鋁材，該植晶部520的複數個導腳5200及銲墊5202上方係設置有電鍍層54，該焊接部521的複數個導腳5200及銲墊5202下方係設置有電鍍層54，該電鍍層54係選自金、銀、鎳、鉻、鈀、鋅中之其中一種或多種，該植晶部520之絕緣間隙5201的寬度小於、大於或等於該焊接部521之絕緣間隙5211的寬度，複數個導電通孔5203內係 填充有金、銀、銅、鋁，複數個導熱通孔52020內係填充有金、銀、銅或鋁。The upper adhesive layer 5204 and the lower adhesive layer 5206 are insulating adhesives. The plurality of lead pins 5200 and the solder pads 5202 of the seed layer 50 are copper foils, and the plurality of lead pins 5210 and pads of the solder layer 51 5212 is a copper, iron or aluminum material. The plurality of lead pins 5200 and the solder pads 5202 of the irrigating portion 520 are provided with a plating layer 54. The plurality of lead pins 5200 and the solder pads 5202 of the soldering portion 521 are provided with a lower portion. The plating layer 54 is selected from one or more of gold, silver, nickel, chromium, palladium, and zinc. The width of the insulating gap 5201 of the crystal implanting portion 520 is less than, greater than, equal to or greater than the soldering portion 521. Width of the insulating gap 5211, a plurality of conductive vias 5203 Filled with gold, silver, copper, aluminum, a plurality of thermal vias 52020 are filled with gold, silver, copper or aluminum.
其中，該植晶部520及焊接部521之複數個導腳5200、5210數係大於二時，該植晶部520各導腳5200與各導腳5200之間設有導腳絕緣間距5208及導腳貼帶間距5209，該焊接部521各導腳5210與各導腳5210之間係設有絕緣間距5213，該焊接部521之絕緣間距5213係填充有絕緣材(如第11圖所示)。Wherein, when the number of the plurality of guiding legs 5200, 5210 of the irrigating portion 520 and the soldering portion 521 is greater than two, the guiding distance between the guiding legs 5200 and the guiding legs 5200 is set to be 5208 and guiding between the guiding portions 5200 and the guiding legs 5200. The distance between the legs 5209 is such that an insulating pitch 5213 is formed between each of the lead legs 5210 and each of the lead legs 5210. The insulating pitch 5213 of the soldering portion 521 is filled with an insulating material (as shown in FIG. 11).
其中，該貼帶層5205係以為醯胺化合物(Polyimide,PI)為製材，且該導腳貼帶間距5209、單體貼帶間隙531及導腳貼帶間隙52011係填充有醯胺化合物(Polyimide,PI)(如第10圖所示)。The tape layer 5205 is made of a bismuth compound (Polyimide, PI), and the pin spacing 5209, the monomer tape gap 531, and the foot tape gap 52011 are filled with a guanamine compound (Polyimide). , PI) (as shown in Figure 10).
第六實施例：本實施例係以IC覆晶封裝之複合導線架為例，植晶層為雙面金屬層，且植晶部及焊接部設有一銲墊。Sixth Embodiment: In this embodiment, a composite lead frame of an IC flip chip package is taken as an example, the seed layer is a double-sided metal layer, and the implant portion and the solder portion are provided with a pad.
請參閱第12圖及第13圖；由圖可知，一種複合導線架結構6係由植晶層60、黏接層61及焊接層62組合而成。Please refer to FIG. 12 and FIG. 13; it can be seen from the figure that a composite lead frame structure 6 is formed by combining a seed layer 60, an adhesive layer 61 and a solder layer 62.
該複合導線架結構6係以複數個單體63排列所形成，單體63與單體63之間係設有單體間隙64，又該單體間隙64係設有單體植晶間隙640、單體貼帶間隙641及焊接層單體間隙642，又該焊接層單體間隙642係填充有絕緣材，該單體63係設有植晶部630、黏接部631及焊接部632，該植晶部630係設有複數個導腳6300、絕緣間隙6301及一銲墊6302，該植晶部630之各導腳6300係設有複數個導電通孔6303，該植晶部630之銲墊6302係設有複數個導熱通孔63020，又該銲墊6302係設置於各導腳6300之間，又該植晶部630之各導腳6300及銲墊6302係依序由頂端向下設有上金屬層6304、上黏著層6305、貼帶層6306、 下黏著層6307及下金屬層6308組合而成，該植晶部630之絕緣間隙6301係設有導腳絕緣間隙63010及導腳貼帶間隙63011，又該植晶部630之絕緣間隙6301係形成於植晶部630之銲墊6302與各導腳6300之間，該焊接部632係設有複數個導腳6320、絕緣間隙6321及一銲墊6322，該銲墊6322係設置於各導腳6320之間，該焊接部632之絕緣間隙6321係形成於焊接部632之銲墊6322與各導腳6320之間，又該焊接部632之絕緣間隙6321係填充有絕緣材，該黏接部631係位於植晶部630與焊接部632之間，又植晶部630之各導腳6300與焊接部632之各導腳6320上下相互對應，且該植晶部630之銲墊6302與焊接部632之銲墊6322上下相互對應，使得植晶部630與焊接部632組合而成。The composite lead frame structure 6 is formed by arranging a plurality of cells 63. A cell gap 64 is provided between the cells 63 and the cells 63, and the cell gap 64 is provided with a single crystallographic gap 640. The single-ply tape gap 641 and the solder layer cell gap 642 are further filled with an insulating material, and the cell 63 is provided with a seeding portion 630, an adhesive portion 631 and a solder portion 632. The pedestal portion 630 is provided with a plurality of guiding legs 6300, an insulating gap 6301, and a bonding pad 6302. Each guiding leg 6300 of the irrigating portion 630 is provided with a plurality of conductive vias 6303, and the pad of the crystallization portion 630 The 6302 is provided with a plurality of thermal vias 63020, and the solder pads 6302 are disposed between the lead pins 6300. Further, the lead pins 6300 and the solder pads 6302 of the crystal implanting portion 630 are sequentially disposed from the top end downward. Upper metal layer 6304, upper adhesive layer 6305, tape layer 6306, The lower adhesive layer 6307 and the lower metal layer 6308 are combined. The insulating gap 6301 of the crystallizing portion 630 is provided with a lead insulating gap 63010 and a lead strap gap 63011, and the insulating gap 6301 of the crystal implanting portion 630 is formed. The soldering portion 632 is provided between the soldering pad 6302 and the guiding legs 6300. The soldering portion 632 is provided with a plurality of guiding legs 6320, an insulating gap 6321 and a solder pad 6322. The soldering pad 632 is disposed on each of the guiding legs 6320. The insulating gap 6321 of the soldering portion 632 is formed between the solder pad 6322 of the soldering portion 632 and each of the lead legs 6320, and the insulating gap 6321 of the soldering portion 632 is filled with an insulating material, and the bonding portion 631 is The guiding legs 6300 of the irrigating portion 630 and the guiding legs 6320 of the soldering portion 632 are vertically corresponding to each other, and the bonding pads 6302 and the soldering portions 632 of the crystallization portion 630 are located between the pedestal portion 630 and the soldering portion 632. The pads 6322 are vertically connected to each other such that the crystallized portion 630 and the welded portion 632 are combined.
所述該上黏著層6305及下黏著層6307係為絕緣膠，該植晶層60之複數個導腳6300及銲墊6302係為銅箔，該焊接層62之複數個導腳6320及銲墊6322為銅、鐵或鋁材，該植晶部630的複數個導腳6300及銲墊6302上方係設置有電鍍層67，該焊接部632的複數個導腳6320及銲墊6322下方係設置有電鍍層67，該電鍍層67係選自金、銀、鎳、鉻、鈀、鋅中之其中一種或多種，該植晶部630之絕緣間隙6301的寬度小於、大於或等於該焊接部632之絕緣間隙6321的寬度，複數個導電通孔6303內係填充有金、銀、銅或鋁，複數個導熱通孔63020內係填充有金、銀、銅或鋁。The upper adhesive layer 6305 and the lower adhesive layer 6307 are insulating adhesives. The plurality of guiding legs 6300 and the bonding pads 6302 of the seeding layer 60 are copper foils, and the plurality of guiding legs 6320 and pads of the soldering layer 62 6322 is a copper, iron or aluminum material. The plurality of lead pins 6300 and the solder pads 6302 of the pedestal portion 630 are provided with a plating layer 67. The plurality of lead pins 6320 and the solder pads 6322 of the soldering portion 632 are provided under the soldering portion 632. The plating layer 67 is selected from one or more of gold, silver, nickel, chromium, palladium, and zinc. The width of the insulating gap 6301 of the crystallizing portion 630 is less than, greater than, equal to or greater than the soldering portion 632. The width of the insulating gap 6321, the plurality of conductive vias 6303 are filled with gold, silver, copper or aluminum, and the plurality of thermal vias 63020 are filled with gold, silver, copper or aluminum.
其中，該植晶部630及焊接部632之複數個導腳6300、6320數均大於二時，該植晶部630各導腳6300與各導腳6 300之間設有導腳絕緣間距65及導腳貼帶間距66，該焊接部632各導腳6320與各導腳6320之間係設有絕緣間距6323，該焊接部631之絕緣間距6323係填充有絕緣材(如第13圖所示)。Wherein, when the number of the plurality of guiding legs 6300 and 6320 of the irrigating portion 630 and the soldering portion 632 is greater than two, each of the guiding portions 6300 and the guiding legs 6 of the irrigating portion 630 Between the 300, a guide pitch 65 and a lead pitch 66 are provided. An insulating pitch 6323 is formed between each lead 6320 and each lead 6320 of the soldering portion 632. The insulating pitch 6323 of the soldering portion 631 is filled. There are insulating materials (as shown in Figure 13).
其中，該貼帶層6306係以為醯胺化合物(Polyimide,PI)為製材，且導腳貼帶間距66、單體貼帶間隙641及導腳貼帶間隙63011係填充有醯胺化合物(Polyimide,PI)如同第五實施例所示的導腳貼帶間距5209、單體貼帶間隙531及導腳貼帶間隙52011(如第10圖所示)。The tape layer 6306 is made of a bismuth compound (Polyimide, PI), and the pin gap 66, the cell tape gap 641, and the foot tape gap 63011 are filled with a guanamine compound (Polyimide, PI) As shown in the fifth embodiment, the guide tape pitch 5209, the single tape gap 531, and the lead tape gap 52011 (as shown in Fig. 10).
第七實施例：本實施例係以IC打線(Wire Bond)封裝之複合導線架為例。Seventh Embodiment: This embodiment is an example of a composite lead frame of an IC wire package.
請參閱第14圖；由圖可知，該植晶層70為單面金屬層74，且植晶部71及焊接部72設有一銲墊77，而應用於IC晶片73的複合導線架結構7係由可藉由金屬線材75將IC晶片73與導腳76相連接，使得本創作的複合導線架結構7可應用於IC晶片打線(Wire Bond)封裝。Referring to FIG. 14 , it can be seen that the seed layer 70 is a single-sided metal layer 74, and the lithography portion 71 and the solder portion 72 are provided with a pad 77, and the composite lead frame structure 7 applied to the IC wafer 73 is shown. The IC wafer 73 and the lead 76 can be connected by a metal wire 75, so that the composite lead frame structure 7 of the present invention can be applied to an IC chip wire bond package.
此外，IC晶片打線封裝亦可應用於植晶層為雙面金屬層之複合導線架或無銲墊之複合導線架上。In addition, the IC wafer wire-bonding package can also be applied to a composite lead frame in which the seed layer is a double-sided metal layer or a composite lead frame without a pad.
承，本創作所述複合導線架結構，主要係將軟性基板與金屬導線架黏接組成，並具有熱導性佳、機械耐久力高、高腳化及小型化之效益，又能應用於覆晶、打線等半導體封裝技術之產品，且適用於LED、IC半導體封裝之產品。The composite lead frame structure of the present invention mainly consists of bonding a flexible substrate and a metal lead frame, and has the advantages of good thermal conductivity, high mechanical durability, high footing and miniaturization, and can be applied to the overlay. Products such as crystal and wire bonding technology, and are suitable for LED and IC semiconductor package products.
綜合上述，本創作所述複合導線架結構，係有下列之優點：In summary, the composite lead frame structure of the present invention has the following advantages:
1、本創作所述複合導線架結構，係藉由導電通孔連接至焊接部之導腳，使得複合導線架結構之導電性佳。1. The composite lead frame structure of the present invention is connected to the guide leg of the soldering portion by a conductive through hole, so that the composite lead frame structure has good conductivity.
2、本創作所述複合導線架結構，係藉由導熱通孔連接至焊接部之銲墊，使得複合導線架結構之導熱性佳。2. The composite lead frame structure of the present invention is connected to the solder pad by a thermally conductive through hole, so that the thermal conductivity of the composite lead frame structure is good.
3、本創作所述複合導線架結構，係藉由絕緣材將該焊接層的絕緣間隙及絕緣間距緊密接合，可提高該複合導線架結構之機械耐久力。3. The composite lead frame structure of the present invention is to closely bond the insulation gap and the insulation pitch of the solder layer by the insulating material, thereby improving the mechanical durability of the composite lead frame structure.
4、本創作所述複合導線架結構，係該絕緣間距及絕緣間隙皆為細小，使得複合導線架產品可多腳化，又達到封裝後的產品具有小型化之效益。4. The composite lead frame structure of the present invention is such that the insulation spacing and the insulation gap are small, so that the composite lead frame product can be multi-legged, and the packaged product has the advantage of miniaturization.
故，本創作在同類產品中具有極佳之進步性以及實用性，同時查遍國內外關於此類結構之技術資料文獻後，確實未發現有相同或近似之構造存在於本案申請之前，因此本案應已符合『創作性』、『合於產業利用性』以及『進步性』的專利要件，爰依法提出申請之。Therefore, this creation has excellent progress and practicality in similar products. At the same time, after checking the technical literature on such structures at home and abroad, it has not been found that the same or similar structure exists before the application of this case, so this case It should meet the patent requirements of "creative", "combined with industrial use" and "progressive", and apply in accordance with the law.
唯，以上所述者，僅係本創作之較佳實施例而已，舉凡應用本創作說明書及申請專利範圍所為之其它等效結構變化者，理應包含在本創作之申請專利範圍內。It is to be understood that the above-mentioned preferred embodiments of the present invention are intended to be included in the scope of the present invention.
1‧‧‧複合導線架結構1‧‧‧Composite lead frame structure
10‧‧‧植晶層10‧‧‧Sky layer
11‧‧‧焊接層11‧‧‧welding layer
12‧‧‧單體12‧‧‧Single
120‧‧‧植晶部120‧‧‧The Department of Phytolithology
1200‧‧‧導腳1200‧‧‧ lead
1201‧‧‧絕緣間隙1201‧‧‧Insulation gap
12010‧‧‧導腳絕緣間隙12010‧‧‧Insulation gap
12011‧‧‧導腳貼帶間隙12011‧‧‧ Guide pin with gap
1202‧‧‧導電通孔1202‧‧‧ conductive through hole
1203‧‧‧上金屬層1203‧‧‧Upper metal layer
1204‧‧‧上黏著層1204‧‧‧Upper adhesive layer
1205‧‧‧貼帶層1205‧‧‧ tape layer
1206‧‧‧下黏著層1206‧‧‧Under the adhesive layer
121‧‧‧焊接部121‧‧‧Weld Department
1210‧‧‧導腳1210‧‧‧ lead
1211‧‧‧絕緣間隙1211‧‧‧Insulation gap
13‧‧‧單體間隙13‧‧‧Single gap
130‧‧‧單體植晶間隙130‧‧‧Single planting gap
131‧‧‧單體貼帶間隙131‧‧‧Single tape gap
132‧‧‧焊接層單體間隙132‧‧‧welding layer monomer gap
14‧‧‧電鍍層14‧‧‧Electroplating
Claims (28)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW103204883U TWM486861U (en) | 2014-03-21 | 2014-03-21 | Composite lead frame structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW103204883U TWM486861U (en) | 2014-03-21 | 2014-03-21 | Composite lead frame structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TWM486861U true TWM486861U (en) | 2014-09-21 |
Family
ID=51945505
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW103204883U TWM486861U (en) | 2014-03-21 | 2014-03-21 | Composite lead frame structure |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TWM486861U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI671571B (en) * | 2018-03-27 | 2019-09-11 | 同泰電子科技股份有限公司 | Package structure for backlight module |
-
2014
- 2014-03-21 TW TW103204883U patent/TWM486861U/en not_active IP Right Cessation
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI671571B (en) * | 2018-03-27 | 2019-09-11 | 同泰電子科技股份有限公司 | Package structure for backlight module |
| US10580951B2 (en) | 2018-03-27 | 2020-03-03 | Uniflex Technology Inc. | Package structure for backlight module |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI329354B (en) | Multi-die semiconductor package | |
| TW200306652A (en) | Ball grid array package with stacked center pad chips and method for manufacturing the same | |
| CN105593986B (en) | Semiconductor device and its manufacturing method | |
| JP4813255B2 (en) | WIRING BOARD, MANUFACTURING METHOD THEREOF, AND SEMICONDUCTOR DEVICE | |
| JP2008283195A5 (en) | ||
| JP2014515187A5 (en) | ||
| TW200531232A (en) | Semiconductor package with heatsink and method for fabricating the same and stiffner | |
| TW201129266A (en) | Electronic system with a composite substrate | |
| TWI446508B (en) | Coreless package substrate and method of making same | |
| TWI406376B (en) | Semiconductor chip package | |
| JP2012084840A (en) | Semiconductor device and manufacturing method thereof | |
| WO2012171320A1 (en) | A new contact smart card packaging method | |
| JP5553766B2 (en) | Semiconductor device and manufacturing method thereof | |
| US9847279B2 (en) | Composite lead frame structure | |
| TWM486861U (en) | Composite lead frame structure | |
| TW201218332A (en) | Package substrate and fabrication method thereof | |
| TW201201331A (en) | Module substrate that allows replacement of faulty chips, semiconductor module having the same, and method for manufacturing the semiconductor module | |
| CN110379784B (en) | Semiconductor packaging structure | |
| TW200423348A (en) | Semiconductor package with heatsink | |
| JP4030220B2 (en) | Semiconductor chip mounting structure | |
| TWI390701B (en) | Semiconductor package exempt with substrate and contact pins and its fabricating process | |
| WO2014094436A1 (en) | Gold/silicon eutectic chip soldering method and transistor | |
| KR101418399B1 (en) | Power module with stacked flip-chip and method of fabricating the same power module | |
| JP2013012570A (en) | Semiconductor device and semiconductor device manufacturing method | |
| JP4342577B2 (en) | Semiconductor chip mounting structure |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4K | Annulment or lapse of a utility model due to non-payment of fees |