TWM486145U - Dye-sensitized solar cell - Google Patents

Dye-sensitized solar cell Download PDF

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TWM486145U
TWM486145U TW103205590U TW103205590U TWM486145U TW M486145 U TWM486145 U TW M486145U TW 103205590 U TW103205590 U TW 103205590U TW 103205590 U TW103205590 U TW 103205590U TW M486145 U TWM486145 U TW M486145U
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dye
sensitized solar
solar cell
transparent conductive
working electrode
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TW103205590U
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Chinese (zh)
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Jung-Chuan Chou
Chin-Hui Huang
Jui-En Hu
Shen-Wei Chuang
Shen-Chang Lin
Yi-Hung Liao
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Univ Nat Yunlin Sci & Tech
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/542Dye sensitized solar cells

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Abstract

A dye-sensitized solar cell is provided. The dye-sensitized solar cell includes a working electrode, a counter electrode on the working electrode and an electrolyte between the working electrode and the counter electrode. The working electrode includes a transparent plate, a porous semiconductor layer on the transparent conductive plate and a dye in the porous semiconductor layer.

Description

染料敏化太陽能電池Dye sensitized solar cell

本創作係有關於一種光電裝置,且特別有關一種染料敏化太陽能電池。This creation relates to an optoelectronic device and in particular to a dye-sensitized solar cell.

於能源即將告罄之二十一世紀,綠色能源之永續利用觀念已油然而生,故開發各式各樣綠色能源為研究主要目標。各國目前正積極開發太陽能、地熱、風力發電、水力發電及生質能等相關綠色能源,用以替代有限資源及減少環境汙染,近年又以太陽能源中之染料敏化太陽能電池為其發展趨勢。In the 21st century, where energy is about to be announced, the concept of sustainable use of green energy has emerged, so the development of various green energy sources is the main research goal. Countries are actively developing green energy sources such as solar energy, geothermal energy, wind power generation, hydropower generation and biomass energy to replace limited resources and reduce environmental pollution. In recent years, dye-sensitized solar cells in solar energy sources have been developed.

染料敏化太陽能電池(Dye-sensitized Solar Cell,DSSC)具有製程簡易、成本低廉、輕薄、攜帶便利及可撓性等優勢,其研究發展與市場開發具有極大潛力。Dye-sensitized Solar Cell (DSSC) has the advantages of simple process, low cost, light weight, convenient carrying and flexibility, and its research and development and market development have great potential.

1991年瑞士科學家M.Grätzel發表多孔性二氧化鈦薄膜吸附一單分子染料層,其光電轉換效率可達7.1%~7.9%,並發現此種釕金屬衍生物之染料分子可吸收近全波長範圍之太陽光,經研究得知最佳之光電轉換效率可達11.18%。2003年M.Grätzel發表使用釕金屬吡啶錯合物(N719)染料作為濕式染料敏化太陽能電池之染料,其光電轉換效率於一標準太陽能模擬光源 (AM 1.5)下量測可得10.58%。2011年K.C.Ho使用市售有機金屬染料N719、Black dye及元素114(Flerovium,FL)有機染料備製染料敏化太陽能電池,其最佳效率可達5.10%。近期中興大學、交通大學及瑞士洛桑聯邦理工學院合作研究紫質分子以人工葉綠素之概念備製出最新的有機光敏材料,可有效吸收太陽光之可見光及近紅外光波段,將光能轉換為電能,其光電轉換效率可達至13.1%。In 1991, Swiss scientist M.Grätzel published a porous titanium dioxide film to adsorb a single molecule dye layer with a photoelectric conversion efficiency of 7.1% to 7.9%. It was found that the dye molecules of such base metal derivatives can absorb the sun in the near full wavelength range. Light, after research, the best photoelectric conversion efficiency can reach 11.18%. In 2003, M. Grätzel published the use of ruthenium metal pyridine complex (N719) dye as a dye for wet dye-sensitized solar cells with photoelectric conversion efficiency in a standard solar analog light source. (AM 1.5) The measurement can be obtained by 10.58%. In 2011, K.C.Ho used commercially available organometallic dyes N719, Black dye and element 114 (Flerovium, FL) organic dyes to prepare dye-sensitized solar cells with an optimum efficiency of 5.10%. Recently, ZTE University, Jiaotong University and the Swiss Federal Institute of Technology in Lausanne have collaborated to study the purple molecules to prepare the latest organic photosensitive materials with the concept of artificial chlorophyll, which can effectively absorb the visible and near-infrared wavelengths of sunlight and convert light energy into electrical energy. Its photoelectric conversion efficiency can reach 13.1%.

中華民國新型專利第M436222號「染料敏化太陽能工 作電極及其應用之電池結構改良」揭露一種染料敏化太陽能工作電極及其應用電池結構之改良,以一導電基板上設置如二氧化鈦等半導體材料及染料分子結合而成之導電單元而構成一工作電極,再利用二導電基板、二工作電極,以及一電解質層、觸媒層等構件組成染料敏化太陽能電池。主要令導電單元具有若干不同粒徑之半導體材料之電導層,半導體材料至少包括第一半導體材料,其材料粒徑小於10nm、第二半導體材料,其材料粒徑介於10~50nm、第三半導體材料,其材料粒徑介於50~100nm,令半導體材料可獨立分層疊置或調合混雜成一體,據以增進電子之傳輸,提昇染料敏化太陽能電池之光電轉換效率。Republic of China New Patent No. M436222 "Dye-sensitized solar energy Improvement of battery structure for electrode and its application" discloses a dye-sensitized solar working electrode and an improved battery structure thereof, and a conductive unit formed by combining a semiconductor material such as titanium dioxide and a dye molecule on a conductive substrate to form a work The electrode is further composed of a second conductive substrate, two working electrodes, and an electrolyte layer, a catalyst layer and the like to constitute a dye-sensitized solar cell. The conductive unit mainly has a plurality of electrically conductive layers of semiconductor materials of different particle sizes. The semiconductor material comprises at least a first semiconductor material having a material particle diameter of less than 10 nm and a second semiconductor material having a material diameter of 10 to 50 nm and a third semiconductor. The material has a particle size of 50-100 nm, so that the semiconductor materials can be stacked or blended into one body independently, thereby enhancing the transmission of electrons and improving the photoelectric conversion efficiency of the dye-sensitized solar cell.

中華民國新型專利第M380573號「工作電極及應用其 製得的染料敏化太陽能電池」揭露一種工作電極用於染料敏化太陽能電池,工作電極包含一第一導電基板及一設置於第一導電基板上的導電單元。導電單元包括一導電氧化物薄膜、多數個設置於導電氧化物薄膜遠離第一導電基板一側面上之氧化物奈米管,及一吸附於氧化物奈米管表面上之染料。上述新型亦提供一種應 用上述工作電極製得之染料敏化太陽能電池。上述新型染料敏化太陽能電池包含一如前述之工作電極、一對電極及一電解質。對電極包括一第二導電基板及一設置於第二導電基板上之惰性金屬層,電解質位於工作電極導電單元及對電極惰性金屬層之間。工作電極及染料敏化太陽能電池藉由特殊雙層結構之傳導帶,即氧化物奈米管及導電氧化物薄膜,可確實增進染料敏化太陽能電池染料吸附量及吸收太陽能之能力,並抑制導電單元中電子與電洞之再結合效應,進而增進染料敏化太陽能電池之光電轉換效率。The Republic of China new patent No. M380573 "Working electrode and its application The prepared dye-sensitized solar cell discloses a working electrode for a dye-sensitized solar cell, and the working electrode comprises a first conductive substrate and a conductive unit disposed on the first conductive substrate. The conductive unit comprises a conductive oxide film, a plurality of oxide nanotubes disposed on a side of the conductive oxide film away from the first conductive substrate, and a dye adsorbed on the surface of the oxide nanotube. The above new type also provides a response A dye-sensitized solar cell produced by using the above working electrode. The above novel dye-sensitized solar cell comprises a working electrode as described above, a pair of electrodes, and an electrolyte. The counter electrode comprises a second conductive substrate and an inert metal layer disposed on the second conductive substrate, the electrolyte being located between the working electrode conductive unit and the counter electrode inert metal layer. The working electrode and the dye-sensitized solar cell can effectively improve the dye adsorption amount of the dye-sensitized solar cell and the ability to absorb solar energy, and suppress the conductivity by using a special double-layer conductive strip, that is, an oxide nano tube and a conductive oxide film. The recombination effect of electrons and holes in the unit, thereby improving the photoelectric conversion efficiency of the dye-sensitized solar cell.

中華民國新型專利第M375974號「具有雙層薄膜的工 作電極及應用其製得的染料敏化太陽能電池」揭露一種工作電極用於染料敏化太陽能電池,工作電極包含一第一導電基板及一設置於第一導電基板上之導電單元。導電單元包括一層設置於第一導電基板上之多孔性氧化鋅薄膜、一層設置於多孔性氧化鋅薄膜遠離第一導電基板一側面上之多孔性二氧化鈦薄膜,及一吸附於該多孔性二氧化鈦薄膜上之染料。上述新型亦提供一種應用上述工作電極製得之染料敏化太陽能電池。Republic of China New Patent No. M375974 "Work with double-layer film As an electrode and a dye-sensitized solar cell produced by the same, a working electrode is used for a dye-sensitized solar cell, and the working electrode comprises a first conductive substrate and a conductive unit disposed on the first conductive substrate. The conductive unit comprises a porous zinc oxide film disposed on the first conductive substrate, a porous titanium dioxide film disposed on a side of the porous zinc oxide film away from the first conductive substrate, and adsorbed on the porous titanium dioxide film. Dye. The above novel also provides a dye-sensitized solar cell produced by applying the above working electrode.

本創作之實施例係揭示一種染料敏化太陽能電池,包括:一工作電極;一輔助電極,位於工作電極上;以及一電解液,位於工作電極與輔助電極之間,其中工作電極包括:一透明導電板;一多孔性半導體層,位於透明導電板上;以及一染料,位於多孔性半導體層內。The embodiment of the present invention discloses a dye-sensitized solar cell comprising: a working electrode; an auxiliary electrode on the working electrode; and an electrolyte between the working electrode and the auxiliary electrode, wherein the working electrode comprises: a transparent a conductive plate; a porous semiconductor layer on the transparent conductive plate; and a dye located in the porous semiconductor layer.

本創作之染料敏化太陽能電池具有製程簡單、備製 省時及環保優勢。The dye-sensitized solar cell of the present invention has a simple process and preparation Time saving and environmental advantages.

為讓本創作之上述和其他目的、特徵、和優點能更明顯易懂,下文特舉出較佳實施例,並配合所附圖式,作詳細說明如下:The above and other objects, features, and advantages of the present invention will become more apparent and understood.

10‧‧‧染料敏化太陽能電池10‧‧‧Dye-sensitized solar cells

11‧‧‧電解液11‧‧‧ electrolyte

20‧‧‧工作電極20‧‧‧Working electrode

21、24‧‧‧透明導電板21, 24‧‧‧ Transparent conductive plate

21a、24a‧‧‧透明基底21a, 24a‧‧‧ Transparent substrate

21b、24b‧‧‧透明導電層21b, 24b‧‧‧ transparent conductive layer

22‧‧‧多孔性半導體層22‧‧‧Porous semiconductor layer

23‧‧‧染料23‧‧‧D dyes

30‧‧‧輔助電極30‧‧‧Auxiliary electrode

31‧‧‧催化層31‧‧‧ Catalytic layer

40‧‧‧異質界面阻抗量測架構40‧‧‧ Heterogeneous Interface Impedance Measurement Architecture

41‧‧‧導線41‧‧‧Wire

42‧‧‧電化學阻抗分析儀42‧‧‧Electrochemical Impedance Analyzer

50‧‧‧等效電路模型50‧‧‧ equivalent circuit model

C2‧‧‧工作電極與電解液之間之化學電容C2‧‧‧Chemical capacitance between working electrode and electrolyte

L1‧‧‧導線與透明導電板間因電感效應產生之歐姆電感Ohmic inductance due to inductance effect between L1‧‧‧ wire and transparent conductive plate

Q1‧‧‧輔助電極與電解液之間之雙層電容Q1‧‧‧ Double layer capacitance between auxiliary electrode and electrolyte

R1‧‧‧導線與透明導電板之歐姆電阻R1‧‧‧ ohmic resistance of wires and transparent conductive plates

R2‧‧‧輔助電極與電解液之間之電荷轉移電阻R2‧‧‧ Charge transfer resistance between auxiliary electrode and electrolyte

R3‧‧‧工作電極與電解液之間之電荷轉移電阻R3‧‧‧ Charge transfer resistance between working electrode and electrolyte

W4‧‧‧電解液擴散至多孔性半導體層之沃伯格電阻W4‧‧‧Warberg resistance of electrolyte diffused into the porous semiconductor layer

第1圖為根據本創作一實施例之染料敏化太陽能電池的剖面示意圖。Fig. 1 is a schematic cross-sectional view showing a dye-sensitized solar cell according to an embodiment of the present invention.

第2圖為根據本創作一實施例之量測染料敏化太陽能電池之異質界面阻抗的架構示意圖。Fig. 2 is a schematic view showing the structure of the hetero interface impedance of the dye-sensitized solar cell according to an embodiment of the present invention.

第3圖為根據本創作一實施例之染料敏化太陽能電池的等效電路模型。Fig. 3 is an equivalent circuit model of a dye-sensitized solar cell according to an embodiment of the present invention.

第4圖繪示出實際量測與經一等效電路模型模擬得到的奈奎斯特(Nyquist)圖。Figure 4 depicts the actual measurement and the Nyquist plot obtained by an equivalent circuit model simulation.

第5A圖繪示出根據本創作一些實施例,具有在不同旋轉塗佈轉速下形成的多孔性半導體層的染料敏化太陽能電池的奈奎斯特圖。Figure 5A depicts a Nyquist plot of a dye-sensitized solar cell having a porous semiconductor layer formed at different spin coating speeds in accordance with some embodiments of the present teachings.

第5B圖為對應第5A圖虛線框部分的放大圖。Fig. 5B is an enlarged view corresponding to the portion of the broken line frame of Fig. 5A.

第6A圖繪示出根據本創作一些實施例,具有在不同退火溫度下形成的多孔性半導體層的染料敏化太陽能電池的奈奎斯特圖。Figure 6A depicts a Nyquist plot of a dye-sensitized solar cell having a porous semiconductor layer formed at different annealing temperatures, in accordance with some embodiments of the present teachings.

第6B圖為對應第6A圖虛線框部分的放大圖。Fig. 6B is an enlarged view corresponding to the portion of the broken line frame of Fig. 6A.

以下說明本創作實施例之染料敏化太陽能電池。然而,可輕易瞭解本創作所提供的實施例僅用於說明以特定方法製作及使用本創作,並非用以侷限本創作的範圍。再者,在本創作實施例之圖式及說明內容中係使用相同的標號來表示相同或相似的部件。The dye-sensitized solar cell of the present embodiment will be described below. However, it is readily understood that the examples provided by the present invention are only intended to illustrate the creation and use of the present invention in a particular manner and are not intended to limit the scope of the present invention. In the drawings and the description of the present embodiments, the same reference numerals are used to refer to the same or similar parts.

請參照第1圖,其繪示出根據本創作一實施例之染料敏化太陽能電池10的剖面示意圖。在本實施例中,染料敏化太陽能電池10包括一工作電極20、位於工作電極20上之一輔助電極(Counter Electrode)30,以及位於工作電極20與輔助電極30之間的一電解液11,其中工作電極20包括一透明導電板21、位於透明導電板21上的一多孔性半導體層22,以及位於多孔性半導體層22內的染料23。Referring to FIG. 1, a cross-sectional view of a dye-sensitized solar cell 10 according to an embodiment of the present invention is shown. In the present embodiment, the dye-sensitized solar cell 10 includes a working electrode 20, an auxiliary electrode 30 on the working electrode 20, and an electrolyte 11 between the working electrode 20 and the auxiliary electrode 30. The working electrode 20 includes a transparent conductive plate 21, a porous semiconductor layer 22 on the transparent conductive plate 21, and a dye 23 located in the porous semiconductor layer 22.

透明導電板21包括透明基底21a與透明導電層21b。在本實施例中,透明基底21a可為玻璃、可撓式透明基底或任何適用於染料敏化太陽能電池的基底材料。透明導電層21b可為氧化銦錫(ITO)、摻氟氧化錫(FTO)或任何適當的透明導電材料。在本實施例中,透明導電板21的厚度介於175μm至2000μm之間。The transparent conductive plate 21 includes a transparent substrate 21a and a transparent conductive layer 21b. In the present embodiment, the transparent substrate 21a may be glass, a flexible transparent substrate or any substrate material suitable for dye-sensitized solar cells. The transparent conductive layer 21b may be indium tin oxide (ITO), fluorine-doped tin oxide (FTO), or any suitable transparent conductive material. In the present embodiment, the thickness of the transparent conductive plate 21 is between 175 μm and 2000 μm.

多孔性半導體層22包括二氧化鈦、氧化鋅或任何與染料23及電解液11之氧化還原電位具有相匹配的能階且易於吸附染料23的半導體。在本實施例中,多孔性半導體層22的表面可具備高比表面積,其有助於改善染料23的吸附。在本實施例中,多孔性半導體層22的厚度介於8μm至20μm之間。The porous semiconductor layer 22 includes titanium oxide, zinc oxide, or any semiconductor having a matching energy level with the oxidation-reduction potential of the dye 23 and the electrolytic solution 11 and easily adsorbing the dye 23. In the present embodiment, the surface of the porous semiconductor layer 22 may have a high specific surface area, which contributes to the improvement of the adsorption of the dye 23. In the present embodiment, the thickness of the porous semiconductor layer 22 is between 8 μm and 20 μm.

染料23包括有機釕金屬錯合物,例如 N3(Ruthenium-535)、Z907(Ruthenium520-DN)、N719(Ruthenium 535-bis TBA)或N749(Ruthenium 620-1H3 TBA),其可吸收光並激發電子。在本實施例中,染料23具備以下特性:(1)可緊密吸附於多孔性半導體層22,並快速達到吸附平衡且不易脫落;(2)染料23之吸收光譜與太陽能光譜有良好之匹配;(3)染料23之氧化態及激發態具備高度穩定性與活性;(4)染料23之激發態壽命長,且電荷傳輸效率高;(5)染料23具有與多孔性半導體層22相匹配之氧化還原電位;(6)染料23於氧化還原過程中有相對低之電位,可減少初級與次級間之電子轉移能量損失。Dye 23 includes an organic ruthenium metal complex, such as N3 (Ruthenium-535), Z907 (Ruthenium 520-DN), N719 (Ruthenium 535-bis TBA) or N749 (Ruthenium 620-1H3 TBA), which absorbs light and excites electrons. In the present embodiment, the dye 23 has the following characteristics: (1) can be closely adsorbed to the porous semiconductor layer 22, and quickly reaches the adsorption equilibrium and is not easy to fall off; (2) the absorption spectrum of the dye 23 is well matched with the solar spectrum; (3) The oxidation state and the excited state of the dye 23 have high stability and activity; (4) the excited state of the dye 23 is long, and the charge transport efficiency is high; (5) the dye 23 has a match with the porous semiconductor layer 22. The redox potential; (6) The dye 23 has a relatively low potential in the redox process, which can reduce the electron transfer energy loss between the primary and secondary.

電解液11包括一氧化還原對、一添加劑及一溶劑(未 繪示)。氧化還原對可包括I3-/I- 或任何適用於染料敏化太陽能電池之電解液的氧化還原對。添加劑可包括碘化鈉(Sodium iodide,NaI)、碘化鋰(Lithium iodide,LiI)、碘化1-丙基-2,3-二甲基咪唑(1-propyl-2,3-dimethylimidazolium iodide,DMPII)或4-叔丁基吡啶(4-tert-butylpyridine,TBP),其有助於減少電子電洞複合機率並改善電子傳遞速率。溶劑可包括乙腈(Acetonitrile)、3-甲氧基丙腈(3-methoxy propionitrile,MPN)及碳酸丙烯酯(Propylene carbonate,PC)。在本實施例中,電解液11具備下列特性:(1)電解液11之氧化還原對利於染料23氧化還原電位的有效再生;(2)電解液11具備高溶解度,可確保足夠之電子濃度及避免擴散阻力;(3)電解液11具備高擴散係數,可利於質傳發生;(4)電解液11於可見光波段無吸收峰,可避免入射光被電解液11吸收;(5)電解液11具備高穩定性;(6)電解液11具備高速之氧化還原速率,可利於電子傳遞;(7)電解液11對工作電極20及輔助電極30無腐蝕發生。The electrolyte 11 includes a redox couple, an additive, and a solvent (not shown). Redox couple may include an I3- / I - or any electrolyte suitable for a dye-sensitized solar cell of the redox couple. Additives may include sodium iodide (NaI), lithium iodide (LiI), 1-propyl-2,3-dimethylimidazolium iodide, DMPII) or 4-tert-butylpyridine (TBP), which helps reduce the probability of electron hole recombination and improve electron transfer rate. The solvent may include acetonitrile (Acetonitrile), 3-methoxypropionitrile (MPN), and Propylene carbonate (PC). In the present embodiment, the electrolyte 11 has the following characteristics: (1) the redox of the electrolyte 11 facilitates efficient regeneration of the redox potential of the dye 23; (2) the electrolyte 11 has high solubility, which ensures sufficient electron concentration and Avoid diffusion resistance; (3) Electrolyte 11 has a high diffusion coefficient, which can facilitate the occurrence of mass transfer; (4) Electrolyte 11 has no absorption peak in the visible light band, which can prevent incident light from being absorbed by electrolyte 11; (5) Electrolyte 11 (6) The electrolyte 11 has a high-speed redox rate, which facilitates electron transfer; and (7) the electrolyte 11 does not corrode the working electrode 20 and the auxiliary electrode 30.

輔助電極30包括一透明導電板24以及位於透明導電 板24表面上的一催化層31。在本實施例中,透明導電板24包括透明基底24a以及透明導電層24b。透明基底24a及透明導電層24b的材質及厚度可相同或類似於透明基底21a及透明導電層21b,在此不加以贅述。The auxiliary electrode 30 includes a transparent conductive plate 24 and is located at a transparent conductive A catalytic layer 31 on the surface of the plate 24. In the present embodiment, the transparent conductive plate 24 includes a transparent substrate 24a and a transparent conductive layer 24b. The material and thickness of the transparent substrate 24a and the transparent conductive layer 24b may be the same or similar to the transparent substrate 21a and the transparent conductive layer 21b, and will not be described herein.

催化層31包括鉑、石墨烯、奈米碳管、鎳或任何可 加速催化電解液11氧化還原反應之材料。在本實施例中,催化層31的厚度介於100nm至300nm之間。The catalytic layer 31 comprises platinum, graphene, carbon nanotubes, nickel or any other A material that accelerates the redox reaction of the electrolytic solution 11. In the present embodiment, the thickness of the catalytic layer 31 is between 100 nm and 300 nm.

以下說明第1圖之染料敏化太陽能電池10的一製造 方法。然而,可理解的是本創作之染料敏化太陽能電池10不限於以下列方式製造。Hereinafter, a manufacturing of the dye-sensitized solar cell 10 of Fig. 1 will be described. method. However, it is to be understood that the dye-sensitized solar cell 10 of the present invention is not limited to being manufactured in the following manner.

工作電極20之製造Manufacturing of working electrode 20

首先,提供一透明導電板21(如,摻氟氧化錫玻璃),並以去離子水清洗透明導電板21。接著,將透明導電板21置於烘箱內以蒸發透明導電板21表面的水分。First, a transparent conductive plate 21 (e.g., fluorine-doped tin oxide glass) is provided, and the transparent conductive plate 21 is washed with deionized water. Next, the transparent conductive plate 21 is placed in an oven to evaporate moisture on the surface of the transparent conductive plate 21.

混合一半導體粉末(如,二氧化鈦或氧化鋅粉末)、一分散劑(Dispersant)(如,2,4-戊二酮(Acetylacetone))、一界面活性劑(如,Triton X-100(Cl4 H22 O(C2 H4 O)n )及一溶劑(如,去離子水),以得到一塗佈膠體。在本實施例中,上述各成份之混合重量比例可為1:3:100。接著,藉由旋轉塗佈法(Spin-coating)、射頻濺鍍法(Radio Frequency Sputtering Method)、網版印刷法(Screen-printing)、刮刀塗佈法(Blade-coating)或任何適當的方法將塗佈膠體形成於透明導電板21上,以形成多孔性半導體層22。在本實施例中,可於透明導電板21形成有效面積為0.8cm×0.8cm 的多孔性半導體層22。Mixing a semiconductor powder (eg, titanium dioxide or zinc oxide powder), a dispersant (eg, 2,4-pentane ketone), a surfactant (eg, Triton X-100 (Cl 4 H) 22 O(C 2 H 4 O) n ) and a solvent (e.g., deionized water) to obtain a coating colloid. In this embodiment, the mixing ratio of the above components may be 1:3:100. Then, by spin-coating, Radio Frequency Sputtering Method, Screen-printing, Blade-coating or any suitable method The coating colloid is formed on the transparent conductive plate 21 to form the porous semiconductor layer 22. In the present embodiment, the porous semiconductor layer 22 having an effective area of 0.8 cm × 0.8 cm can be formed on the transparent conductive plate 21.

將上述具有多孔性半導體層22之透明導電板21置於 100℃的烘箱內烘烤10分鐘,再置於350-650℃之退火爐內退火30分鐘,以去除多孔性半導體層22表面上殘留的有機物及增加多孔性半導體層22附著力,進而改善薄膜品質及提升導電性。The transparent conductive plate 21 having the porous semiconductor layer 22 described above is placed Baking in an oven at 100 ° C for 10 minutes, and annealing in an annealing furnace at 350-650 ° C for 30 minutes to remove the organic matter remaining on the surface of the porous semiconductor layer 22 and increase the adhesion of the porous semiconductor layer 22, thereby improving the film. Quality and improved conductivity.

取適量之染料粉末(如,N3染料(Ruthenium-535,N3) 粉末)並將其加入80mL之乙醇溶液,以得到濃度為3×10-4 M之染料23。接著,以超音波振盪染料15分鐘,並將透明導電板21上之多孔性半導體層22在25℃至75℃的溫度下置於染料23中浸泡1小時至24小時,完成工作電極20的製造。An appropriate amount of dye powder (e.g., N3 dye (Ruthenium-535, N3) powder) is taken and added to an 80 mL ethanol solution to obtain a dye 23 having a concentration of 3 × 10 -4 M. Next, the dye is oscillated by ultrasonic waves for 15 minutes, and the porous semiconductor layer 22 on the transparent conductive plate 21 is placed in the dye 23 at a temperature of 25 ° C to 75 ° C for 1 hour to 24 hours to complete the manufacture of the working electrode 20. .

電解液11之製造Manufacture of electrolyte 11

取0.5M碘化鋰(Lithium Iodide,LiI)、0.6M之金屬碘化物(1-propyl-2,3-dimethylimidazolium iodide,DMPII)、0.5M之4-特-丁基吡啶(4-Tert-Butylpyridine,TBP)及0.05M之碘(Iodine,I2 )溶於15mL之3-甲氧基(3-methoxypropionitrile,MPN),並以超音波振盪10分鐘,完成電解液11的製造。Take 0.5M lithium iodide (LiI), 0.6M metal iodide (1-propyl-2,3-dimethylimidazolium iodide, DMPII), 0.5M 4-tert-butylpyridine (4-Tert-Butylpyridine) , TBP) and 0.05 M of iodine (Iodine, I 2 ) were dissolved in 15 mL of 3-methoxypropionitrile (MPN) and ultrasonically shaken for 10 minutes to complete the production of the electrolyte 11.

輔助電極30之製造Manufacture of auxiliary electrode 30

首先,提供一透明導電板24。接著,藉由射頻濺鍍法、網版印刷法、刮刀塗佈法、旋轉塗佈法或任何適當的方法於透明導電板22上形成催化層31,其可為鉑、石墨烯、奈米碳管、鎳或任何可加速催化電解液11氧化還原反應之材料,進而完成輔助電極30的製造。First, a transparent conductive plate 24 is provided. Then, the catalytic layer 31 is formed on the transparent conductive plate 22 by a radio frequency sputtering method, a screen printing method, a knife coating method, a spin coating method or any appropriate method, which may be platinum, graphene or nano carbon. The tube, nickel or any material which accelerates the redox reaction of the catalytic electrolyte 11 completes the manufacture of the auxiliary electrode 30.

染料敏化太陽能電池10之封裝Package of dye-sensitized solar cell 10

於輔助電極30上鑽二小孔,並以熱塑膜(如,DuPontTM Surlyn® 1706)封裝工作電極20與輔助電極30。接著,於小孔中注入電解液11,完成染料敏化太陽能電池10之製造。The auxiliary electrode 30 to the two drilled holes, and to a thermoplastic film (e.g., DuPont TM Surlyn ® 1706) encapsulation of the working electrode 20 and the auxiliary electrode 30. Next, the electrolyte 11 is injected into the small holes to complete the manufacture of the dye-sensitized solar cell 10.

第2圖繪示出用於量測染料敏化太陽能電池10之異 質界面阻抗的架構40示意圖。請參照第2圖,染料敏化太陽能電池10之工作電極20與輔助電極30分別以導線41連接至一電化學阻抗分析儀(BioLogic SP-150,France)42。在上述架構40中,可藉由一阻抗模擬軟體(Z-View)經一等效電路模型50(見第3圖)模擬染料敏化太陽能電池10於異質接面處的電阻、電容及電感並得到一奈奎斯特(Nyquist)頻譜圖(見第4、5A-5B、6A-6B圖)。藉由上述量測架構40,可有效模擬染料敏化太陽能電池內部異質界面處的電阻、電容及電感變化並進而優化電池結構。Figure 2 illustrates the difference between the dye-sensitized solar cells 10 Schematic diagram of the structure 40 of the qualitative interface impedance. Referring to FIG. 2, the working electrode 20 and the auxiliary electrode 30 of the dye-sensitized solar cell 10 are respectively connected by wires 41 to an electrochemical impedance analyzer (BioLogic SP-150, France) 42. In the above architecture 40, the resistance, capacitance and inductance of the dye-sensitized solar cell 10 at the heterojunction can be simulated by an impedance simulation software (Z-View) via an equivalent circuit model 50 (see Fig. 3). A Nyquist spectrogram is obtained (see Figures 4, 5A-5B, 6A-6B). Through the above measurement architecture 40, the resistance, capacitance and inductance changes at the heterogeneous interface inside the dye-sensitized solar cell can be effectively simulated and the battery structure can be optimized.

在本實施例中,第4、5A-5B、6A-6B圖之奈奎斯特頻 譜圖係藉由施加頻率範圍為50mHz~1MHz的小振幅正弦波電位(10mV)或電流為擾動信號,並外加正偏壓0.7V模擬獲得。電子傳輸速度較快之異質接面處阻抗頻譜會於高頻區域出現,電子傳輸速度較慢之異質接面處阻抗頻譜會於低頻區域出現,因此由奈奎斯特頻譜圖可得知染料敏化太陽能電池10包含數個不同異質接面處。In this embodiment, the Nyquist frequency of the 4th, 5A-5B, and 6A-6B diagrams The spectrum is obtained by applying a small amplitude sine wave potential (10 mV) with a frequency range of 50 mHz to 1 MHz or a current as a disturbance signal and applying a positive bias voltage of 0.7 V. The impedance spectrum at the heterojunction where the electron transmission speed is faster will appear in the high frequency region, and the impedance spectrum at the heterojunction where the electron transmission speed is slow will appear in the low frequency region. Therefore, the dye sensitization can be known from the Nyquist spectrogram. Solar cell 10 includes several different heterojunction junctions.

請參照第3圖,L1代表導線41與透明導電板21/24間因 電感效應產生之歐姆電感(Ohmic Inductance)、R1代表導線41與透明導電板21/24之歐姆電阻(Ohmic Resistance)、R2代表輔助電極30與電解液11之間之電荷轉移電阻(Charge-transfer Resistance)、R3代表工作電極20與電解液11之間之電荷轉移電阻、W4代表電解液11擴散至多孔性半導體層22之沃伯格電阻(Warburg Resistance)、Q1代表輔助電極30與電解液11之間之雙層電容(Double-layer Capacitance)、C2代表工作電極20與電解液11之間之化學電容(Chemical Capacitance)。Referring to Figure 3, L1 represents the cause of the conductor 41 and the transparent conductive plate 21/24. The Ohmic Inductance generated by the inductance effect, R1 represents the Ohmic Resistance of the wire 41 and the transparent conductive plate 21/24, and R2 represents the charge-transfer resistance between the auxiliary electrode 30 and the electrolyte 11 (Charge-transfer Resistance) R3 represents the charge transfer resistance between the working electrode 20 and the electrolyte 11, and W4 represents the Warburg resistance of the electrolyte 11 diffused to the porous semiconductor layer 22 (Warburg) Resistance), Q1 represents a double-layer capacitance between the auxiliary electrode 30 and the electrolyte 11, and C2 represents a chemical capacitance between the working electrode 20 and the electrolyte 11 (Chemical Capacitance).

第4圖繪示出實際量測一染料敏化太陽能電池與藉 由等效電路模型50模擬得到的奈奎斯特頻譜圖的比較。如第4圖所示,模擬所得之奈奎斯特頻譜圖與實際量測所得之奈奎斯特頻譜圖相仿,證明本創作所提供之等效電路模型與實際染料敏化太陽能電池結構相似,可有效模擬染料敏化太陽能電池於異質接面處之電阻、電容及電感變化,進而優化電池結構。Figure 4 depicts the actual measurement of a dye-sensitized solar cell and borrowing A comparison of the Nyquist spectrograms simulated by the equivalent circuit model 50. As shown in Fig. 4, the simulated Nyquist spectrum is similar to the actual measured Nyquist spectrum, which proves that the equivalent circuit model provided by this creation is similar to the actual dye-sensitized solar cell structure. It can effectively simulate the change of resistance, capacitance and inductance of the dye-sensitized solar cell at the heterojunction, thereby optimizing the battery structure.

表1揭示根據本創作一些實施例,具有在不同旋轉塗 佈轉速下形成的多孔性半導體層22的染料敏化太陽能電池10的電性參數量測結果。在表1中,VOC ,JSC ,FF,η分別代表開路電壓(Open-circuit Voltage)、短路電流密度(Short-circuit Current Density)、填充因子(Fill Factor)及光電轉換效率(Photoelectric Conversion Efficiency)。Table 1 discloses electrical parameter measurements of dye-sensitized solar cells 10 having porous semiconductor layers 22 formed at different spin coating speeds in accordance with some embodiments of the present teachings. In Table 1, V OC , J SC , FF, η represent Open-circuit Voltage, Short-circuit Current Density, Fill Factor, and Photoelectric Conversion Efficiency, respectively. ).

如表1所示,當旋轉塗佈轉速增加,其旋轉塗佈之離 心力作用將增強,使得多孔性半導體層22之厚度減小,造成電流 密度降低。但隨著轉速降低,經角度與輪廓量測儀發現薄膜表面產生細小裂痕,使得薄膜表面均勻度降低,造成開路電壓下降。 由表1的量測結果可知,旋轉塗佈轉速為2000rpm的實施例具有最佳的電性參數。As shown in Table 1, when the spin coating speed is increased, its spin coating is separated. The cardiac action will be enhanced to reduce the thickness of the porous semiconductor layer 22, causing a current The density is reduced. However, as the rotation speed decreases, the angle and profile measuring instrument finds that fine cracks are formed on the surface of the film, which causes the uniformity of the surface of the film to decrease, resulting in a decrease in the open circuit voltage. From the measurement results of Table 1, it is known that the embodiment in which the spin coating rotation speed is 2000 rpm has the optimum electrical parameters.

表2揭示根據本創作一些實施例,具有在不同旋轉塗 佈轉速下形成的多孔性半導體層22的染料敏化太陽能電池10的阻抗模擬值。第5A圖為根據表2數據模擬得到的奈奎斯特圖,第5B圖為對應第5A圖虛線框部分的放大圖。由以上模擬結果可知,當塗佈多孔性半導體層22之轉速減緩時,多孔性半導體層22厚度具增加之趨勢,於多孔性半導體層22上之染料23吸附量增加,使得短路電流密度提升,因而降低工作電極20與電解液11界面之電荷轉移電阻R3。Table 2 discloses some embodiments according to the present creation, having different spin coatings The impedance simulation value of the dye-sensitized solar cell 10 of the porous semiconductor layer 22 formed at the cloth rotation speed. Fig. 5A is a Nyquist plot obtained from the data simulation of Table 2, and Fig. 5B is an enlarged view corresponding to the portion of the broken line frame of Fig. 5A. As is apparent from the above simulation results, when the number of rotations of the porous semiconductor layer 22 is slowed down, the thickness of the porous semiconductor layer 22 tends to increase, and the amount of adsorption of the dye 23 on the porous semiconductor layer 22 is increased, so that the short-circuit current density is increased. Thus, the charge transfer resistance R3 at the interface between the working electrode 20 and the electrolyte 11 is lowered.

表3揭示根據本創作一些實施例,具有在不同退火溫 度下形成的多孔性半導體層22的染料敏化太陽能電池10的電性參 數。Table 3 discloses some embodiments according to the present creation, having different annealing temperatures The electrical parameter of the dye-sensitized solar cell 10 of the porous semiconductor layer 22 formed under the degree number.

如表3所示,當退火溫度由350℃增加至550℃時,短 路電流密度及光電轉換效率將提升,其多孔性半導體層22晶粒大小及多孔性半導體層22之表面粗糙度皆會增加,使其具光散射之效果,並使得染料23吸光量提升。當退火溫度由650℃增加至750℃時,因金紅石晶相具有較低之能階,使得電子易掉回至價帶並產生電子電洞復合現象,導致短路電流密度減低。由表3的量測結果可知,退火溫度為550℃的實施例具有最佳的電性參數。As shown in Table 3, when the annealing temperature is increased from 350 ° C to 550 ° C, short The path current density and the photoelectric conversion efficiency are improved, and the grain size of the porous semiconductor layer 22 and the surface roughness of the porous semiconductor layer 22 are increased to have a light scattering effect and the light absorption amount of the dye 23 is increased. When the annealing temperature is increased from 650 ° C to 750 ° C, the rutile crystal phase has a lower energy level, which makes the electrons easily fall back to the valence band and cause electron hole recombination, resulting in a decrease in the short-circuit current density. From the measurement results of Table 3, it is understood that the embodiment having an annealing temperature of 550 ° C has the best electrical parameters.

表4揭示根據本創作一些實施例,具有在不同退火溫 度下形成的多孔性半導體層22的染料敏化太陽能電池10的阻抗模擬值。第6A圖為根據表4數據模擬得到的奈奎斯特圖,第6B圖為對應第6A圖虛線框部分的放大圖。由以上模擬結果可知,於中頻區之阻抗值與多孔性半導體層22之入射光子量相關,經退火後多孔性半導體層22上之粒子具有反射入射光子的作用,使得中頻界面之半圓阻抗減小,並使短路電流明顯的增加。當退火溫度由350℃增加至550℃時,其多孔性半導體層22薄膜之表面粗糙度會提高,使得染料23吸附量增加。Table 4 discloses some embodiments according to the present creation, having different annealing temperatures The impedance simulation value of the dye-sensitized solar cell 10 of the porous semiconductor layer 22 formed under the degree. Fig. 6A is a Nyquist diagram obtained by simulation based on the data of Table 4, and Fig. 6B is an enlarged view corresponding to a portion of the broken line frame of Fig. 6A. From the above simulation results, it is known that the impedance value in the intermediate frequency region is related to the incident photon amount of the porous semiconductor layer 22. After annealing, the particles on the porous semiconductor layer 22 have the effect of reflecting incident photons, so that the semicircular impedance of the intermediate frequency interface is obtained. Decrease and significantly increase the short circuit current. When the annealing temperature is increased from 350 ° C to 550 ° C, the surface roughness of the film of the porous semiconductor layer 22 is increased, so that the amount of adsorption of the dye 23 is increased.

表4具有在不同退火溫度下形成的多孔性半導體層22的染Table 4 has the dyeing of the porous semiconductor layer 22 formed at different annealing temperatures.

雖然本創作已以較佳實施例揭露如上,然其並非用以限定本創作,任何所屬技術領域中具有通常知識者,在不脫離本創作之精神和範圍內,當可作任意之更動與潤飾,因此本創作之保護範圍當視後附之申請專利範圍所界定者為準。Although the present invention has been disclosed in the above preferred embodiments, it is not intended to limit the present invention, and any person skilled in the art can make any changes and refinements without departing from the spirit and scope of the present invention. Therefore, the scope of protection of this creation is subject to the definition of the scope of the patent application attached.

10‧‧‧染料敏化太陽能電池10‧‧‧Dye-sensitized solar cells

11‧‧‧電解液11‧‧‧ electrolyte

20‧‧‧工作電極20‧‧‧Working electrode

21、24‧‧‧透明導電板21, 24‧‧‧ Transparent conductive plate

21a、24a‧‧‧透明基底21a, 24a‧‧‧ Transparent substrate

21b、24b‧‧‧透明導電層21b, 24b‧‧‧ transparent conductive layer

22‧‧‧多孔性半導體層22‧‧‧Porous semiconductor layer

23‧‧‧染料23‧‧‧D dyes

30‧‧‧輔助電極30‧‧‧Auxiliary electrode

31‧‧‧催化層31‧‧‧ Catalytic layer

Claims (11)

一種染料敏化太陽能電池,包括:一工作電極;一輔助電極,位於該工作電極上;以及一電解液,位於該工作電極與該輔助電極之間,其中該工作電極包括:一第一透明導電板;一多孔性半導體層,位於該第一透明導電板上;以及一染料,位於該多孔性半導體層內。A dye-sensitized solar cell comprising: a working electrode; an auxiliary electrode on the working electrode; and an electrolyte between the working electrode and the auxiliary electrode, wherein the working electrode comprises: a first transparent conductive a plate; a porous semiconductor layer on the first transparent conductive plate; and a dye located in the porous semiconductor layer. 如申請專利範圍第1項所述之染料敏化太陽能電池,其中該第一透明導電板包括一透明基底與一透明導電層。The dye-sensitized solar cell of claim 1, wherein the first transparent conductive plate comprises a transparent substrate and a transparent conductive layer. 如申請專利範圍第2項所述之染料敏化太陽能電池,其中該透明基底包括玻璃或可撓式透明基底,且該透明導電層包括氧化銦錫或摻氟氧化錫。The dye-sensitized solar cell of claim 2, wherein the transparent substrate comprises a glass or a flexible transparent substrate, and the transparent conductive layer comprises indium tin oxide or fluorine-doped tin oxide. 如申請專利範圍第1項所述之染料敏化太陽能電池,其中該多孔性半導體層包括二氧化鈦或氧化鋅。The dye-sensitized solar cell of claim 1, wherein the porous semiconductor layer comprises titanium dioxide or zinc oxide. 如申請專利範圍第1項所述之染料敏化太陽能電池,其中該染料包括有機釕金屬錯合物。The dye-sensitized solar cell of claim 1, wherein the dye comprises an organic ruthenium metal complex. 如申請專利範圍第1項所述之染料敏化太陽能電池,其中該電解液包括一氧化還原對、一添加劑及一溶劑。The dye-sensitized solar cell of claim 1, wherein the electrolyte comprises a redox couple, an additive, and a solvent. 如申請專利範圍第6項所述之染料敏化太陽能電池,其中該 氧化還原對包括I- /I3 -The dye-sensitized solar cell of claim 6, wherein the redox pair comprises I - /I 3 - . 如申請專利範圍第6項所述之染料敏化太陽能電池,其中該溶劑包括乙腈、甲氧基丙腈或上述之組合。The dye-sensitized solar cell of claim 6, wherein the solvent comprises acetonitrile, methoxypropionitrile or a combination thereof. 如申請專利範圍第6項所述之染料敏化太陽能電池,其中該添加劑包括碘化鈉、碘化鋰、4-特-丁基吡啶、1,2-二甲基-3-丙基咪碘唑鹽或上述之組合。The dye-sensitized solar cell of claim 6, wherein the additive comprises sodium iodide, lithium iodide, 4-tert-butylpyridine, 1,2-dimethyl-3-propylimidonate An azole salt or a combination of the above. 如申請專利範圍第1項所述之染料敏化太陽能電池,其中該輔助電極包括一第二透明導電板及位於該第二透明導電板上的一催化層。The dye-sensitized solar cell of claim 1, wherein the auxiliary electrode comprises a second transparent conductive plate and a catalytic layer on the second transparent conductive plate. 如申請專利範圍第10項所述之染料敏化太陽能電池,其中該催化層包括鉑。The dye-sensitized solar cell of claim 10, wherein the catalytic layer comprises platinum.
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI649959B (en) * 2018-01-16 2019-02-01 東海大學 Method for analyzing semiconductor components with multiple interfaces

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI649959B (en) * 2018-01-16 2019-02-01 東海大學 Method for analyzing semiconductor components with multiple interfaces

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