JP5540744B2 - Photoelectric conversion element - Google Patents

Description

  The present invention relates to a photoelectric conversion element for a dye-sensitized solar cell with improved conversion efficiency.

  As a next-generation solar cell, development of an organic solar cell that can be manufactured at a low temperature and at a lower cost is expected. Among organic solar cells, dye-sensitized solar cells have the potential to significantly reduce manufacturing costs, have the same performance as amorphous silicon solar cells, and can produce colored transparent solar cells. It has attracted particular attention because of its attractiveness not found in batteries.

  In general, a dye-sensitized solar cell includes a semiconductor electrode having a photoelectric conversion layer made of a semiconductor having a dye adsorbed on a conductive substrate, and a counter electrode having a catalyst layer provided on a conductive substrate provided oppositely. The electrolyte layer is held between the semiconductor electrode and the counter electrode. As the electrolyte, an iodine-based redox couple dissolved in an organic solvent is generally used. Iodine-based redox couples have excellent performance, such as high ion conductivity and a high rate of reducing oxidized dyes, while low reactivity on the conductive glass surface and titanium oxide surface of the working electrode. ing.

However, although iodine-based electrolyte can obtain high conversion efficiency, it has the following problems.
-It is very difficult to seal because of its high volatility.
-Since it has high corrosivity, the material which can be used as an electrode is limited.
・ Iodine-based redox couples have a very large absorbance coefficient in the visible light region, impeding the light absorption of the dye, causing performance degradation, and when emphasizing the design of solar cells, the iodine color This prevents the vividness of the pigment from being fully utilized.

Therefore, and redox couple is required to replace the iodine-based, such as bromine compounds, sulfur compounds, selenium, iron complex system, a cobalt complex-based, benzoquinone / hydroquinone system, (SCN) - / (SCN ) 2 system, ( Studies such as SeCN) − / (SeCN) ₂ have been made (for example, see Patent Document 1).

JP 2008-16442 A

However, it is difficult to say that any of the above-described redox couples that replace iodine is problematic in terms of stability and safety, and because it is colored, it is highly practical. For example, benzoquinone exhibits a very dark red to yellow color and is poorly designed, and (SCN) ₂ is very unstable at room temperature and polymerization proceeds rapidly.

  Then, this invention makes it a subject to provide the photoelectric conversion element for dye-sensitized solar cells which not only does not inhibit the light absorption of a pigment | dye but does not impair color property, and is highly efficient and excellent in design property. .

In order to solve the above-mentioned problems, the present invention provides a semiconductor electrode formed by sequentially forming a transparent conductive film and a porous semiconductor layer in which a sensitizing dye is adsorbed on a porous semiconductor on the surface of a transparent substrate, A photoelectric conversion element configured by holding an electrolyte layer between a counter electrode formed with a catalyst layer on the surface of a conductive substrate, wherein the electrolyte layer includes ammonium thiocyanate and 2, both 5-di -t- butyl Hidorokino down together to provide a photoelectric conversion element characterized in that it comprises a concentration 5.0MM～100.0MM.

  The hydroquinone derivative and thiocyanic acid derivative contained in the electrolyte layer of the photoelectric conversion element of the present invention not only have high performance and stability as a redox couple, but also are almost colorless and transparent, so that the appearance of the element may impair the color. No high efficiency and excellent design.

It is sectional drawing which shows typically the structure of the photoelectric conversion element of this invention.

  Hereinafter, the present invention will be described in detail with reference to the drawings.

  FIG. 1 is a cross-sectional view schematically showing a configuration of a photoelectric conversion element 1 according to the present invention, which is configured by holding an electrolyte layer 30 between a semiconductor electrode 10 and a counter electrode 20 as in the prior art. The

[Semiconductor electrode]
The semiconductor electrode 10 is obtained by forming a transparent conductive film 12 on one surface 11 a of the transparent substrate 11 and further forming a porous semiconductor layer 13 on the surface 12 a of the transparent conductive film 12.

(Transparent substrate)
The transparent substrate 11 only needs to transmit visible light, and a transparent glass plate, plastic plate, plastic film, or the like can be used, but a transparent glass plate is preferable. Further, by processing the surface 11a on which the transparent conductive film 12 is formed to scatter incident light, the incident light can be used with high efficiency. The thickness of the transparent substrate 11 is not particularly limited because it varies depending on the shape and use conditions of the photoelectric conversion element 1. For example, when glass or plastic is used, 1 mm to 1 cm is considered in consideration of durability during actual use. The degree is preferable, flexibility is required, and when a plastic film or the like is used, about 1 μm to 1 mm is preferable.

(Transparent conductive film)
As the transparent conductive film 12, a material that transmits visible light and has conductivity can be used. An example of such a material is a metal oxide. Although not particularly limited, for example, tin oxide doped with fluorine (hereinafter abbreviated as “FTO”), indium oxide, a mixture of tin oxide and indium oxide (hereinafter abbreviated as “ITO”), antimony, and the like. Tin oxide, zinc oxide and the like doped with can be preferably used.

  Further, as the transparent conductive film 12, an opaque conductive material can be used if visible light is transmitted by a process such as dispersion. Such materials include carbon materials and metals. Although it does not specifically limit as a carbon material, For example, graphite (graphite), carbon black, glassy carbon, a carbon nanotube, fullerene, etc. are mentioned. Further, the metal is not particularly limited, and examples thereof include platinum, gold, silver, ruthenium, copper, aluminum, nickel, cobalt, chromium, iron, molybdenum, titanium, tantalum, and alloys thereof.

  The thickness of the transparent conductive film 12 is not particularly limited because the conductivity varies depending on the material to be used, but is generally 0.01 μm to 5 μm, and preferably 0.1 μm to 1 μm in the FTO-coated glass. It is. Further, the required conductivity varies depending on the area of the electrode to be used, and it is required that the wider the electrode, the lower the resistance. In general, the sheet resistance (surface resistivity) is 100Ω / □ or less, preferably 10Ω. / □ or less, more preferably 5Ω / □ or less. This sheet resistance is an electrical resistance value of a thin film or film-like substance, and its unit is Ω, but is conventionally described as “Ω / □ (ohm / square)” to indicate that it is a sheet.

  Although the thickness which integrated the transparent substrate 11 and the transparent conductive film 12 changes with the shape and use conditions of the photoelectric conversion element 1 as mentioned above, it is not specifically limited, Generally, it is about 1 micrometer-1 cm.

(Porous semiconductor layer)
The porous semiconductor layer 13 is obtained by adsorbing a sensitizing dye to a porous metal oxide semiconductor. Although it does not specifically limit as a porous metal oxide semiconductor, A titanium oxide, a zinc oxide, a tin oxide, etc. are mentioned, Especially titanium dioxide and also anatase type titanium dioxide are suitable. Further, it is desirable that the metal oxide has few grain boundaries in order to reduce the electric resistance value. Furthermore, in order to carry more sensitizing dyes, the porous metal oxide semiconductor desirably has a large specific surface area, specifically 10 to 200 m ² / g.

  As the sensitizing dye, any dye that can be excited by sunlight and can inject electrons into the porous metal oxide semiconductor can be used, and dyes generally used in photoelectric conversion elements can be used. In order to improve, it is desirable that the absorption spectrum overlaps with the sunlight spectrum in a wide wavelength region and has high light resistance. Specific examples include metal complex dyes such as ruthenium complexes, iron complexes, and copper complexes. Further examples include organic dyes such as cyan dyes, porphyrin dyes, polyene dyes, coumarin dyes, cyanine dyes, squaric acid dyes, methine dyes, xanthene dyes, and indoline dyes.

  The method for forming the porous semiconductor layer 13 is not particularly limited. For example, a porous metal oxide semiconductor is deposited at a predetermined thickness by a sol-gel method, dispersion paste application, electrodeposition or electrodeposition, and a sensitizing dye is added. What is necessary is just to make it adsorb | suck.

  The thickness of the porous semiconductor layer 13 is not particularly limited because the optimum value varies depending on the oxide to be used, but is 0.1 μm to 50 μm, preferably 3 to 30 μm, and more preferably 5 to 15 μm.

[Counter electrode]
The counter electrode 20 is obtained by forming a catalyst layer 22 on one surface 21 a of a conductive substrate 21. Since the conductive substrate 21 is used as a support and current collector of the catalyst layer 22, the surface 21a on which the catalyst layer 22 is formed preferably has conductivity. For example, platinum, gold, silver, Metals selected from ruthenium, copper, aluminum, nickel, cobalt, chromium, iron, molybdenum, titanium, tantalum, and alloys thereof, such as graphite, carbon black, glassy carbon, carbon nanotubes, and fullerenes For example, a metal oxide thin film selected from FTO, ITO, indium oxide, zinc oxide, and antimony oxide can be formed. Further, an insulator such as glass or plastic can also be used if the surface is treated so as to have conductivity.

  The catalyst layer 22 is not particularly limited as long as it has electrode characteristics capable of promptly proceeding with a reduction reaction for reducing the oxidized form of the redox couple in the electrolyte to a reduced form. , Heat treated materials, platinum catalyst electrodes deposited with platinum, carbon materials such as activated carbon, glassy carbon and carbon nanotubes, inorganic sulfur compounds such as cobalt sulfide, conductive polymers such as polythiophene, polypyrrole, and polyaniline can be used. However, among them, a platinum catalyst electrode can be preferably used. The thickness of the catalyst layer 22 is suitably 5 nm to 5 μm, particularly preferably 50 nm to 2 μm.

(Electrolyte layer)
The electrolyte layer 30 contains a 2,5-di -t- butyl Hidorokino down and ammonium thiocyanate as an oxidation-reduction pair.

The mixing ratio of the 2,5-di -t- butyl Hidorokino down and ammonium thiocyanate is not particularly limited, considering the photoelectric conversion efficiency, the molar ratio of 2,5-di -t- butyl Hidorokino on / thiocyanate It is preferable that it is acid acid ammonium = 0.05-20, More preferably, it is 0.1-10.

  The balance of the electrolyte layer 30 is a solvent, but a lithium salt, an imidazolium salt, a quaternary ammonium salt, a room temperature molten salt, or the like can be added as a supporting electrolyte. These additives can be added to such an extent that the characteristics of the electrolyte layer 30 are not impaired. Moreover, it can be gelled physically and chemically by adding an appropriate gelling agent.

The solvent is 2,5-di -t- butyl Hidorokino emissions and particularly as long as it is a compound capable of dissolving the ammonium thiocyanate is no limitation, non-aqueous organic solvent, an ambient temperature molten salt, and any of such protic organic solvent You can choose. For example, nitrile compounds such as acetonitrile, methoxyacetonitrile, valeronitrile, 3-methoxypropionitrile, lactone compounds such as γ-butyllactone and valerolactone, carbonate compounds such as ethylene carbonate and propylene carbonate, dioxane, diethyl ether, ethylene glycol Examples include dialkyl ethers, ethers such as low-polymerization polyethylene glycol, alcohols such as methanol and ethanol, dimethylformamide and imidazoles, among which acetonitrile, valeronitrile, 3-methoxypropionitrile, propylene carbonate, low Polymerization degree polyethylene glycol etc. can be used conveniently.

The concentration of 2,5-di -t- butyl Hidorokino emissions in the electrolyte layer 30 is a 5.0mM~100.0mM the solvent. If the concentration is 5.0mM less, 2,5-di -t- butyl Hidorokino down effect of adding is not be almost obtained, improvement of photoelectric conversion efficiency hardly observed. On the other hand, even if the concentration is higher than 100.0 mM, not only the photoelectric conversion efficiency is hardly improved, but a large amount of benzoquinone, which is an oxidant of hydroquinone, may be generated, which may cause discoloration. .

The concentration of ammonium thiocyanate is the same, and is 5.0 mM to 100.0 mM with respect to the solvent. When the concentration is smaller than 5.0 mM, the effect of adding ammonium thiocyanate is hardly obtained, and the photoelectric conversion efficiency is hardly improved. On the other hand, even if the concentration is higher than 100.0 mM, not only the photoelectric conversion efficiency is hardly improved, but also the oligomerization and polymerization of ammonium thiocyanate proceeds at a high speed, and the modification of the components occurs. There is a risk that.

  In order to produce the photoelectric conversion element 1, after preparing the respective constituent materials described above, according to a conventionally known method, the semiconductor electrode 10 and the counter electrode 20 are opposed so that the porous semiconductor layer 13 and the catalyst layer 22 face each other. And the electrolyte layer 30 may be sealed and assembled. The sealing includes a method of sealing the side surfaces of the semiconductor electrode 10 and the counter electrode 20 with an epoxy adhesive.

  Examples The present invention will be further described below with reference to examples and comparative examples, but the present invention is not limited thereby.

(Production of test photoelectric conversion element)
Glass with ITO film (sputtered product; manufactured by Geomatek Co., Ltd.) is cut into a predetermined size, washed with a glass detergent, and the detergent is washed away with pure water, followed by acetone, hexane, acetone, pure water, and pure water. In order, ultrasonic cleaning was performed for 5 minutes each. After drying, finish cleaning was performed for 10 minutes using a UV ozone cleaner, and then immersed in an aqueous TiCl ₄ solution at 70 ° C. for 30 minutes. Subsequently, after being taken out from the TiCl ₄ aqueous solution, washed with pure water and dried, TiO ₂ paste (“Ti-Nanoxide D” manufactured by SOLARONIX) was applied to the ITO film surface with a K control coater (manufactured by Matsuo Seisakusho) of about 50 μm. Applied to thickness. And after leaving still and drying for about 30 minutes, it baked in air | atmosphere in order of 80 degreeC, 30 minutes, 450 degreeC, and 30 minutes, and formed the porous titanium oxide film about 10 micrometers thick.

  Next, 5- {1,2,3,3a, 4,8b-hexahydro-4- [4- (2,2-diphenylvinyl) phenyl] -cyclopenta [b] indole-7, called D102 as a sensitizing dye -Illmethylene} -4-oxo-2-thioxo-thiazolidin-3-yl) acetic acid (Mitsubishi Paper Co., Ltd.) was used and mixed with a 0.3 mM t-butanol / acetonitrile solution (volume ratio 1: 1). The glass with ITO on which the porous titanium oxide film was formed was immersed in the dye solution dissolved in the solvent, and allowed to stand at about 40 ° C. for 3 hours under light shielding. Thereafter, excess dye is washed with ethanol, t-butanol / acetonitrile (mixed solvent with a volume ratio of 1: 1; manufactured by Wako Pure Chemical Industries, Ltd.), and air-dried to form a porous semiconductor layer to obtain a semiconductor electrode. It was.

  As a counter electrode, a platinum thin film was formed on a glass substrate by a vacuum deposition method. The thickness of the platinum thin film was about 200 nm.

  For the electrolyte layer, ammonium thiocyanate (manufactured by Junsei Kagaku Co., Ltd.) and 2,5-di-t-butylhydroquinone (manufactured by Wako Pure Chemical Industries, Ltd.) are mixed at the ratio shown in Table 1. An electrolyte solution was prepared by dissolving in freeze-deaerated acetonitrile (manufactured by Wako Pure Chemical Industries, Ltd.). In Comparative Examples 5 to 7, the electrolyte solutions shown in Table 2 were used.

  Then, an electrolyte solution was injected between the semiconductor electrode and the counter electrode, and the side surface was sealed with an epoxy adhesive to produce a photoelectric conversion element. This operation was performed in a glove box substituted with argon.

(Evaluation of photoelectric conversion characteristics of photoelectric conversion elements)
Photoelectric conversion characteristics were evaluated using a solar simulator. The simulated sunlight used light of 100 mW / cm ² under AM1.5 conditions, and the characteristic evaluation was performed by calculating the conversion efficiency from the open circuit voltage, short circuit current, and fill factor. The results are shown in Table 1.

(Durability evaluation of photoelectric conversion elements)
For durability, the conversion efficiency was measured again after 1000 hours of light irradiation, and the relative ratio with the conversion efficiency immediately after assembly was determined. The results are shown in Table 1.

  The photoelectric conversion elements of the examples all show higher conversion efficiencies than Comparative Example 3 in which only 2,5-di-t-butylhydroquinone was added and Comparative Example 4 in which only ammonium thiocyanate was added. It was found that when the concentration of ammonium thiocyanate was 25.0 mM or more, high conversion efficiency of 2.5% or more was exhibited. Moreover, even after 1000 hours of light irradiation, no significant change in the photoelectric conversion characteristics appears, indicating sufficient durability.

  In Comparative Examples 5-7, although it is a photoelectric conversion element using the conventional electrolyte, although the photoelectric conversion element of the comparative example 5 using an iodine type electrolyte has high conversion efficiency, there exists a problem in durability, Comparative Example 6, 7 has a low conversion efficiency and a problem with durability. In particular, the photoelectric conversion element of Comparative Example 7 has the worst conversion efficiency and durability.

  In terms of design, since the electrolyte layer of the photoelectric conversion element of the example is almost colorless and transparent, the appearance of the element does not impair the vividness of the dye, and exhibits sufficient design properties. On the other hand, in particular, in the photoelectric conversion element of Comparative Example 5, the dark brown color of the iodine-based electrolyte is mixed with the vivid color of the dye, the appearance of the element changes to dark brown, and the design properties are greatly impaired. .

DESCRIPTION OF SYMBOLS 1 Photoelectric conversion element 10 Semiconductor electrode 11 Transparent substrate 12 Transparent conductive film 13 Porous semiconductor layer 20 Counter electrode 21 Conductive substrate 22 Catalyst layer 30 Electrolyte layer

Claims (2)

A transparent conductive film and a semiconductor electrode formed by sequentially forming a porous semiconductor layer in which a sensitizing dye is adsorbed on a porous semiconductor are formed on the surface of the transparent substrate, and a catalyst layer is formed on the surface of the conductive substrate. A photoelectric conversion element configured by holding an electrolyte layer between a counter electrode,
Wherein the electrolyte layer, both of ammonium thiocyanate and 2,5-di -t- butyl Hidorokino in as oxidation-reduction pair, a photoelectric conversion element characterized by containing both a concentration 5.0MM～100.0MM. The composition ratio of ammonium thiocyanate and 2,5-di -t- butyl Hidorokino emissions is, in molar ratio, 2,5-di -t- butyl Hidorokino on / ammonium thiocyanate = 0.1 to 10 The photoelectric conversion element according to claim 1.

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