TWM478246U - Light emitting device - Google Patents

Description

Illuminating device

The present invention relates to a light-emitting device, and more particularly to a light-emitting device capable of generating a light source.

Nichia Chemical Co., Ltd. began producing white LEDs in 1996. U.S. Patent 5,998,925 discloses the use of a blue light-emitting diode having a wavelength of 450 nm to 470 nm as a light-emitting unit, which is combined with a yttrium-aluminum garnet phosphor (Y3Al5Ol2:Ce3+, also known as YAG:Ce3+) with ruthenium as an activation center. White light illumination system. Part of the blue light emitted by the light-emitting unit is absorbed by the fluorescent material and converted into a broad spectrum of yellow light (the center of the spectrum is about 580 nm), which is stimulated by a large amount of yellow light radiation to stimulate red and green light receptors in the human eye. In addition, the original small amount of blue light stimulates the blue light receptor, which looks like it produces white light.

However, the combination of blue LED and YAG phosphor has inherent disadvantages: poor color rendering due to lack of red light, reduced luminous efficiency with increasing use temperature, and light emitted by high power light source. , its temperature stability is not good.

In order to improve the shortcomings of YAG, many studies have been made to improve Si. Due to the poor thermal stability and poor chemical stability of the ruthenium or osmiumate matrix, but strong absorption in the ultraviolet region, and the high purity bismuth or ruthenium dioxide material is inexpensive and easy to obtain, so replace Si ³ with Si ⁴⁺ silicon-containing rare-earth ions activated luminescent material ⁺ the pay serious attention.

US 2010/0142182 discloses an illumination system comprising a illumination device comprising a first illumination element and a second illumination element separate from the illumination device. The first light-emitting element is provided with a fluorescent material, and may, for example, include a yttrium-aluminum garnet fluorescent substance containing Si and N as an activator, and the fluorescent substance has the following general formula: (Y _1-α-β-ab Lu _α Gd _β ) ₃ (Al _5-uv Ga _u Si _v )O _12-v N _v :Ce _a ³⁺

Where 0 ≦ α <1, 0 ≦ β <1, 0 < ( α + β + a + b) ≦ 1, 0 ≦ u ≦ 1, 0 < v < 1, 0 < a ≦ 0.2.

The phosphor material is improved based on the structure of YAG, but the inherent disadvantage of the Si-containing phosphor powder is that the temperature is low and unstable, and the emitted light color is more beautiful, which is likely to cause excessive irritation to the human eye. If used for a long time, it may cause eye fatigue. Although the nitrogen element with higher sintering temperature is added, the sintering temperature of the fluorescent material is about 1500 ° C, the withstand temperature is still low and the stability is insufficient, and the color rendering index (Ra value) does not exceed 80%, and such a firefly When the light material is used for the light-emitting device, the amount of the component is large.

Furthermore, the luminous efficiency of the light-emitting diode is not only affected by the internal and external quantum conversion efficiency of the wafer, but also needs to consider the light extraction efficiency after packaging. Generally, the quantum conversion efficiency inside and outside the wafer is high, but in the firefly When a light substance uses a resin as a sealant, and the refractive index difference between the resin (about 1.41) and the refractive index of the wafer (about 2.5) is too large, the light wave cannot be efficiently exported due to the total reflection loss and the absorption of the material itself. Light extraction The efficiency is about 32%, which leads to a decrease in light extraction efficiency, which affects the luminous efficacy and lifetime of the light-emitting diode.

From the above, it has been found that the development of a fluorescent material which is resistant to high temperatures, good color rendering and thermal stability, and which is naturally not glaring is an important subject of the current art.

Therefore, the object of the present invention is to provide a light-emitting device having high heat stability and natural light color.

Thus, the novel light-emitting device includes a light-emitting diode for generating a light source, and a phosphor layer. The phosphor layer is formed on the light emitting diode and absorbs the light source to emit light, and contains a M ¹ _y M ² ₅ O _z C _x :M ³ _w compound. Wherein M ¹ is selected from the group consisting of Sc ³⁺ , Y ³⁺ , La ³⁺ , Sm ³⁺ , Gd ³⁺ , Tb ³⁺ , Pm ³⁺ , Er ³⁺ , Lu ³⁺ , and a combination thereof .

The effect of the novel: The novel does not contain Si material, but replaces part of the oxygen with carbon, which not only has high heat resistance temperature, but also improves thermal stability, and the light color emitted by the light source is more natural and not glare. The color rendering is better.

1‧‧‧Lighting device

11‧‧‧Lighting diode components

12‧‧‧Fluorescent layer

Other features and effects of the present invention will be apparent from the following description of the drawings. FIG. 1 is a cross-sectional view showing a preferred embodiment of a light-emitting device of the present invention; FIG. 2 is a preferred embodiment. In the example, one phase of the form 12 and the comparative example 2 is implemented. FIG. 3 is a radiation spectrum diagram of Embodiment 1 and Comparative Example 3 in the preferred embodiment; and FIG. 4 is a light of Embodiment 5 and Comparative Example 1 in the preferred embodiment. Decay curve.

Before the present invention is described in detail, it should be noted that in the following description, similar elements are denoted by the same reference numerals.

Referring to FIG. 1, a preferred embodiment of the novel light-emitting device 1 includes a light-emitting diode 11 that emits a light source, and a phosphor layer 12 formed on the light-emitting diode 11. The temperature resistant carbide fluorescent material in the phosphor layer 12 is a temperature resistant carbide fluorescent material that absorbs the light source to emit light.

Preferably, the light emitting diode 11 may be a wafer containing Al, Ga, N, P or a combination thereof. More preferably, the light-emitting diode 11 is an LED chip selected from the group consisting of violet, blue or green light. Preferably, the main peak of the illuminating spectrum of the light source ranges from 350 to 500 nm. Preferably, the temperature-resistant carbide fluorescent material in the phosphor layer 12 is vapor-deposited or vapor-deposited on the light-emitting diode 11 to form a film having a mirror-like smooth high-quality surface. Preferably, the fluorescent layer 12 has a radiation wavelength ranging from 380 to 700 nm.

The temperature-resistant carbide fluorescent material in the phosphor layer 12 comprises at least a compound of the formula (I): M ¹ _y M ² ₅ O _z C _x : M ³ _w . ................................(I)

Wherein M ^{1 is} selected from the group consisting of Sc ³⁺ , Y ³⁺ , La ³⁺ , Sm ³⁺ , Gd ³⁺ , Tb ³⁺ , Pm ³⁺ , Er ³⁺ , Lu ³⁺ , and combinations thereof.

M ^{2 is} selected from the group consisting of Al ³⁺ , In ³⁺ , Ga ³⁺ , and the like.

M ³ is selected from the group consisting of Tm ³⁺ , Bi ³⁺ , Tb ³⁺ , Ce ³⁺ , Eu ³⁺ , Mn ³⁺ , Er ³⁺ , Yb ³⁺ , Ho ³⁺ , Gd ³⁺ , Pr ³⁺ , Dy ³⁺ , Nd ³⁺ , and a combination of these.

And in the formula (I), 2.25 ≦ x ≦ 3.75, 2.7 ≦ y ≦ 3, 0.01 < w ≦ 0.3, and 4.5 ≦ z ≦ 7.5.

The temperature-resistant carbide fluorescent material in the phosphor layer 12 emits the desired color light by matching various elements; and the novel replaces the part O with C, and the C layer has a covalent bond structure in the fluorescent layer 12 The bonding strength of the temperature-resistant carbide fluorescent material is not easy to break, the temperature is tolerated, the sintering temperature is about 1800 ° C, and the thermal stability is good.

In addition, when the activation center metal element M ³ includes Tm ³⁺ or Bi ³⁺ , the temperature resistant carbide phosphor material in the phosphor layer 12 is excited by the light source to emit blue light, and when the activation center metal element M ³ includes Tb ^{3 +} or Ce ³⁺ , the temperature-resistant carbide fluorescent material of the phosphor layer 12 is excited by the light source to emit yellow-green light, and when the active central metal element M ³ includes Eu ³⁺ or Mn ³⁺ , the fluorescent layer 12 The temperature-resistant carbide phosphor material is excited by the light source to emit red light. The activation center metal element (or lightening element), in addition to being related to the wavelength of the emitted light, also contributes to enhancing the light-emitting intensity of the phosphor layer 12.

Preferably, 0.01 ≦ w ≦ 0.3. When w is less than 0.01, the brightness of the temperature-resistant carbide fluorescent material of the phosphor layer 12 is insufficient; when the w is greater than 0.3, the emission wavelength of the fluorescent layer 12 is increased, and the brightness is lowered. More preferably, it is 0.01 ≦ w ≦ 0.3.

Preferably, the temperature resistant carbide fluorescent material in the phosphor layer 12 may be Y _2.98 Al ₅ O _7.5 C _2.25 : Tm _0.02 , Y _2.95 Al ₅ O ₆ C ₃ : Bi _0.05 , Y _2.94 Al ₅ O ₆ C ₃ : Tb _0.06 , Y _2.95 Al ₅ O _7.5 C _2.25 : Ce _0.05 , Y _2.95 Al ₅ O ₆ C ₃ : Ce _0.05 , Y _2.95 Al ₅ O _4.5 C _3.75 : Ce _0.05 , Y _2.95 Al ₅ O ₆ C ₃ : Mn _0.05 , Y _2.75 GaAl ₄ O ₆ C ₃ : Mn _0.25 , Y _2.94 Al ₅ O _4.5 C _3.75 : Bi _0.06 , Y _2.94 Al ₅ O _4.5 C _3.75 : Tm _0.06 , Y _2.94 Al ₅ O _4.5 C _3.75 : Ce _0.04 Tb _0.02 , Y _2.95 Al ₅ O _4.5 C _3.75 : Mn _0.05 , Y _2.95 Ga ₅ O _4.5 C _3.75 : Mn _0.05 , Y _2.94 Al ₅ O ₆ C ₃ : Bi _0.06 , Y _2.94 Al ₅ O ₆ C ₃ : Mn _0.06 , Y _2.94 Al ₅ O ₆ C ₃ :Ce _0.06 , Lu _1.72 Gd _1.2 Al ₅ O ₆ C ₃ :Ce _0.05 Pr _0.03 , Lu _1.72 Er ₁ Ga ₅ O _4.5 C _3.75 :Mn _0.25 Dy _0.03 ,Lu _1.92 Sc ₁ Al ₅ O ₆ C ₃ :Ce _0.05 Yb _0.03 , Sm _1.92 La ₁ Al ₅ O ₆ C ₃ :Ce _0.05 Ho _0.03 , Y _2.32 Gd _0.6 In ₁ Al ₄ O ₆ C ₃ :Ce _0.05 Nd _0.03 , or Lu _1.95 Pm ₁ Al ₅ O ₆ C ₃ : one of Ce _0.05 .

Preferably, the temperature-resistant carbide fluorescent material of the phosphor layer 12 has a radiation wavelength ranging from 380 to 700 nm. Wherein, when the element M ³ include credit Tb ^3+, Er ^3+, Yb ³⁺ or Ho ^3+, radiation in the wavelength range of the phosphor layer 12 carbide temperature of a fluorescent material 380 ~ 530nm; when M ³ The light-increasing element Gd ³⁺ , Pr ³⁺ , Dy ³⁺ or Nd ^{3+ is included} , and the temperature-resistant carbide fluorescent material in the phosphor layer 12 has a radiation wavelength ranging from 530 to 700 nm.

Preferably, the temperature resistant carbide fluorescent material in the phosphor layer 12 has an excitation wavelength in the range of 250 to 500 nm. Preferably, the temperature-resistant carbide fluorescent material in the phosphor layer 12 has a particle size ranging from 5 μm to 20 μm. The method for preparing the temperature resistant carbide fluorescent material in the phosphor layer 12 may be a solid-state method, a citrate gel method, or a coprecipitation method, and is not limited. Prepared in a single method. Preferably, the temperature resistant carbide fluorescent material in the phosphor layer 12 is prepared by a high temperature solid state method. The solid-state method is simple, which is conducive to mass production and has great industrial application value. More preferably, the solid state method has a sintering temperature of 1800 ° C and a reduction temperature of 1500 ° C.

The present invention will be further described in the following examples, but it should be understood that this embodiment is intended to be illustrative only and not to be construed as limiting.

<Chemical source and preparation>

Bismuth oxide (Bi ₂ O ₃ ): purchased from ACROS, with a purity of 99.9%, reagent grade.

Barium fluoride (BaF ₂ ): purchased from ACROS, with a purity of 99.9%, reagent grade.

Cerium oxide (Tm ₂ O ₃ ): purchased from ACROS, with a purity of 99.9%, reagent grade.

Cerium oxide (CeO ₂ ): purchased from ACROS, with a purity of 99.9%, reagent grade.

Ammonium hydrogencarbonate (NH ₄ HCO ₃ ): purchased from ACROS, with a purity of 99.9%, reagent grade.

Manganese oxide (MnO ₂ ): purchased from ACROS, with a purity of 99.9%, reagent grade.

Yttrium oxide (Y ₂ O ₃ ): purchased from ACROS, with a purity of 99.9%, reagent grade.

Alumina (Al ₂ O ₃ ): purchased from ACROS, with a purity of 99.9%, reagent grade.

Bismuth dioxide (BiO ₂ ): purchased from ACROS, with a purity of 99.9%, the reagent grade.

Cerium oxide (Tb ₄ O ₇ ): purchased from ACROS, with a purity of 99.9%, the reagent grade.

Gallium oxide (Ga ₂ O ₃ ): purchased from ACROS, with a purity of 99.9%, the reagent grade.

Cerium oxide (Gd ₂ O ₃ ): purchased from ACROS, with a purity of 99.9%, reagent grade.

Cerium oxide (Lu ₂ O ₃ ): purchased from ACROS, with a purity of 99.9%, reagent grade.

Cerium oxide (Er ₂ O ₃ ): purchased from ACROS, with a purity of 99.9%, reagent grade.

Yttrium oxide (Dy ₂ O ₃ ): purchased from ACROS, with a purity of 99.9%, reagent grade.

Cerium oxide (Pr ₆ O ₁₁ ): purchased from ACROS, with a purity of 99.9%, reagent grade.

Cerium oxide (Sc ₂ O ₃ ): purchased from ACROS, with a purity of 99.9%, reagent grade.

Yttrium oxide (Yb ₂ O ₃ ): purchased from ACROS, with a purity of 99.9%, reagent grade.

Cerium oxide (Sm ₂ O ₃ ): purchased from ACROS, with a purity of 99.9%, reagent grade.

Antimony oxide (Ho ₂ O ₃ ): purchased from ACROS, with a purity of 99.9%, reagent grade.

Cerium oxide (Nd ₂ O ₃ ): purchased from ACROS, with a purity of 99.9%, reagent grade.

Cerium oxide (Pm ₂ O ₃ ): purchased from ACROS, with a purity of 99.9%, reagent grade.

Barium magnesium aluminate (BaMgAl ₁₀ O ₁₇ , abbreviated as BAM): purchased from Japan Basic Chemical Company.

钇-aluminum garnet (YAG): purchased from Japan's fundamental chemical company.

铒: 钇-aluminum garnet (referred to as YAG:Er): purchased from Japan's fundamental chemical company.

Y ₄ C ₃ : synthesized by Y ₂ O ₃ and C under an argon atmosphere at 1200 ° C to 1800 ° C.

Al ₄ C ₃ : synthesized by Al ₂ O ₃ and C under an argon atmosphere at 1200 ° C to 1800 ° C.

Ce ₄ C ₃ : synthesized by CeO ₂ and C under an argon atmosphere at 1200 ° C to 1800 ° C.

Ga ₄ C ₃ : Synthesized by Ga ₂ O ₃ and C under an argon atmosphere at 1200 ° C to 1800 ° C.

[Implementation 1]

Preparation of phosphor layer 12: According to the stoichiometric ratio, 33.65 g of Y ₂ O ₃ , 0.39 g of Tm ₂ O ₃ , 20.39 g of Al ₂ O ₃ , 5.4 g of Al ₄ C _{3 were} weighed, and the above raw materials and 2.9 g of flux BaF were prepared. ₂ uniformly mixed to form a mixture. The types of chemicals required for the preparation of Example 1 are detailed in Table 1.

The mixture was placed in a crucible, and heated to 1,650 ° C at a heating rate of 5 ° C / min under nitrogen for calcination for 24 hours, and then cooled to room temperature at a rate of 5 ° C / min to obtain a calcined powder.

The calcined powder was ground, washed and dried, and sieved through a 400 mesh screen. The milled powder was placed in a reducing atmosphere of 85%/15% N ₂ /H ₂ and reduced at 1500 ° C for 12 hours to obtain a temperature resistant carbide in the phosphor layer 12 of the sample state 1. Fluorescent material.

[Luminescence test]

A sample of the phosphor layer 12 of the embodiment 1 was excited by ultraviolet light of 400 nm, and the emission wavelength of the sample of the embodiment 1 was measured by a photoluminescence (Photo Luminescence, PL for short) phenomenon, and blue light having a wavelength of 460 nm was detected. The results of the luminescence test of the embodiment 1 are shown in Table 2.

[Implementation 2~22]

The preparation process, preparation conditions and test methods of the phosphor layers 12 of the embodiment 2 to 22 are the same as those of the embodiment 1, except that the types and amounts of the raw materials chemicals are used, and the types of the materials used are described in detail in Table 1.

The phosphor layer 12 samples of the examples 2 to 22 were subjected to luminescence test, and the excitation wavelength and the measured emission wavelength and light color are shown in Table 2.

[Comparative Examples 1 to 4]

The fluorescent materials of Comparative Examples 1 to 3 were commercially available materials, and were YAG: Ce, YAG: Eu, and BAM, respectively. Comparative Example 4 is Y ₃ Al ₂ O _7.5 :Ce. After chemical conversion, the desired raw materials and fluxes were weighed by a stoichiometric ratio, and the above raw materials and fluxes were uniformly mixed to form a mixture. The types of chemicals required for the preparation of Comparative Example 4 are described in detail in Table 1.

The samples of the fluorescent materials of Comparative Examples 1 to 4 were subjected to luminescence test, and the wavelength of the excitation light and the measured wavelength and color of the emitted light are shown in Table 2.

As can be seen from Table 2, the YAG material of Comparative Example 1 was excited by blue light, and the emitted light was yellow light having a wavelength of 530 nm; Comparative Example 2 was YAG:Eu, and red light having a wavelength of 620 nm was emitted after excitation by violet light. From this, it can be seen that the excitation wavelength and the emission wavelength are different depending on the activation center.

It can be seen from the wavelengths of the excitation light and the wavelength of the emitted light of the implementation states 4 to 6, that the increase in the carbon content and the relative decrease in the oxygen content do not affect the wavelength of the emitted light. The emission wavelength of each embodiment is mainly related to the type of the activation center metal element M ³ : when M ³ includes Tm ³⁺ or Bi ³⁺ , the phosphor material is excited by the light source to emit blue light when the active central metal element M ^{3 is} activated. When Tb ³⁺ or Ce ³⁺ is included, the fluorescent material emits yellow-green light after being excited by the light source. When the active central metal element M ³ includes Eu ³⁺ or Mn ³⁺ , the fluorescent material is excited by the light source to emit red light. When M ³ includes a lightening element Tb ³⁺ , Er ³⁺ , Yb ³⁺ or Ho ³⁺ , the emission wavelength of the phosphor layer 12 ranges from 380 to 530 nm; when M ³ includes a lightening element Gd ³⁺ , Pr ³⁺ , Dy ³⁺ or Nd ³⁺ , the fluorescent material has a radiation wavelength ranging from 530 to 700 nm.

Referring to Fig. 2, it can be seen from the relative spectrum that when the sample of Comparative Example 2 (YAG:Eu) and the sample of Example 12 (Y _2.95 Al ₅ O _4.5 C _3.75 : Mn _0.05 ) are also excited by 460 nm blue light, the sample is applied. State 12 has a preferred luminescence intensity.

3 is a fluorescence spectrum of Comparative Example 3 (BAM) and Example 1, when Comparative Example 3 was excited by violet light having a wavelength of 400 nm, and blue light having a wavelength of 450 nm was emitted, and the spectral frequency average was 446.9. When the implementation state 14 (Y _2.94 Al ₅ O ₆ C ₃ :Bi _0.06 ) is excited by the violet light having a wavelength of 400 nm or less, the spectrum of the blue light having a wavelength of 450 nm is emitted, and the spectral frequency average value is 701.1, which shows the luminous efficacy of the implementation mode 15 Better than Comparative Example 3.

It should be noted that Comparative Example 4 (Y ₃ Al ₂ O _7.5 :Ce) has a white powder appearance and is structurally different from yttrium-aluminum garnet (structure is Y ₃ Al _{3 to 5} O _{9 to 12} ). . When attempting to excite Comparative Example 4 with blue light having a wavelength of 450 nm, Comparative Example 4 was not excited by the blue light source, and no fluorescence emission was observed.

Example 4 is Y _2.95 Al ₅ O _7.5 C _2.25 :Ce _0.05 , and the difference in structure from Comparative Example 4 is (Al ₄ C ₃ ) _0.75 ; when the mode 4 is excited by blue light having a wavelength of 450 nm, the implementation is carried out. Pattern 4 is excited by blue light and emits yellow fluorescence, which is mixed with partially unabsorbed blue light to form white light. The present invention differs from conventional fluorescent materials in that it is structurally more (Al ₄ C ₃ ) _m , of which 2.25 ≦ m ≦ 3.75.

Referring to Fig. 4, the light decay curve of Comparative Example 1 (YAG) and the embodiment 5 (Y _2.95 Al ₅ O ₆ C ₃ :Ce _0.05 ) shows that in the destructive test, when the temperature rises, the fluorescent material The intensity of the light emission will be attenuated. The performance of the mode 5 anti-light decay is better than that of the comparative example 1, presumably because the implementation mode 5 has a covalent bond structure of C, so that the temperature-resistant carbide fluorescent material in the phosphor layer 12 is in a high temperature environment. It is relatively stable, the degree of attenuation of light emission is small, and it has good thermal stability.

In terms of color rendering, the color rendering property (Ra value) of the general YAG material is about 80%. The novel fluorescent layer 12 has better color rendering properties than the conventional materials, and the Ra value is about 85% or more, and generally Si or S. The fluorescent material which replaces Al to modify YAG is not deviated from the range of yttrium aluminum garnet (YAG) in nature, so its color rendering property (Ra value) is also about 80%.

According to the above description, the light-emitting device of the present invention has the following advantages and effects:

1. The phosphor layer 12 of the present invention is such that the temperature-resistant carbide fluorescent material in the phosphor layer 12 emits the desired color light by mixing various elements; the oxygen (O) is replaced by carbon (C). The fluorescent layer 12 of the present invention has a covalent bond structure, the bond strength is not easily broken, the sintering temperature is about 1800 ° C, the withstand temperature is improved, and the thermal stability is good. Moreover, when the fluorescent layer 12 of the present invention is applied to the light-emitting device 1, the luminous intensity and the luminous efficiency are good, the temperature is high, and the color rendering property is good, and the emitted light color is naturally not glare.

2. The phosphor layer 12 of the present invention is deposited or vapor-deposited on the light-emitting diode 11 without using a resin, and the refractive index of the phosphor layer 12 (about 1.85 to 2.2) approaches the light-emitting diode. The refractive index (about 2.5) of the polar body 11 and the light extraction efficiency are about 50% or more, which not only can effectively derive light waves, but also can greatly improve the luminous efficacy and life of the light-emitting diode 11.

However, the above is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention, that is, the simple equivalent changes and modifications made in accordance with the scope of the present patent application and the contents of the patent specification, All remain within the scope of this new patent.

1‧‧‧Lighting device

11‧‧‧Lighting diode components

12‧‧‧Fluorescent layer

Claims (4)

A light-emitting device comprising: a light-emitting diode for generating a light source; and a phosphor layer formed on the light-emitting diode and absorbing the light source to emit light, comprising at least: a compound of the formula (I): M ¹ _y M ² ₅ O _z C _x :M ³ _w ...................................... (I) wherein M ¹ is selected from the group consisting of Sc ³⁺ , Y ³⁺ , La ³⁺ , Sm ³⁺ , Gd ³⁺ , Tb ³⁺ , Pm ³⁺ , Er ³⁺ , Lu ³⁺ , and one of these combinations; and M ^{2 is} selected from the group consisting of Al ³⁺ , In ³⁺ , Ga ³⁺ , and a combination thereof; M ^{3 is} selected from the group consisting of Tm ³⁺ , Bi ³⁺ , Tb ^{3 +} , Ce ³⁺ , Eu ³⁺ , Mn ³⁺ , Er ³⁺ , Yb ³⁺ , Ho ³⁺ , Gd ³⁺ , Pr ³⁺ , Dy ³⁺ , Nd ³⁺ , and a combination thereof. The light-emitting device according to claim 1, wherein 2.25 ≦ x ≦ 3.75, 2.7 ≦ y ≦ 3, 0.01 < w ≦ 0.3, and 4.5 ≦ z ≦ 7.5. The illuminating device of claim 1, wherein the phosphor layer is a thin film deposited on the light emitting diode. The light-emitting device of claim 1, wherein the temperature-resistant carbide fluorescent material in the phosphor layer is Y _2.98 Al ₅ O _7.5 C _2.25 : Tm _0.02 , Y _2.95 Al ₅ O ₆ C ₃ : Bi _0.05 Y _2.94 Al ₅ O ₆ C ₃ : Tb _0.06 , Y _2.95 Al ₅ O _7.5 C _2.25 : Ce _0.05 , Y _2.95 Al ₅ O ₆ C ₃ : Ce _0.05 , Y _2.95 Al ₅ O _4.5 C _3.75 : Ce _0.05 , Y _2.95 Al ₅ O ₆ C ₃ : Mn _0.05 , Y _2.75 GaAl ₄ O ₆ C ₃ : Mn _0.25 , Y _2.94 Al ₅ O _4.5 C _3.75 : Bi _0.06 , Y _2.94 Al ₅ O _4.5 C _3.75 : Tm _0.06 , Y _2.94 Al ₅ O _4.5 C _3.75 : Ce _0.04 Tb _0.02 , Y _2.95 Al ₅ O _4.5 C _3.75 : Mn _0.05 , Y _2.95 Ga ₅ O _4.5 C _3.75 : Mn _0.05 , Y _2.94 Al ₅ O ₆ C ₃ : Bi _0.06 , Y _2.94 Al ₅ O ₆ C ₃ : Mn _0.06 , Y _2.94 Al ₅ O ₆ C ₃ : Ce _0.06 , Lu _1.72 Gd _1.2 Al ₅ O ₆ C ₃ : Ce _0.05 Pr _0.03 , Lu _1.72 Er ₁ Ga ₅ O _4.5 C _3.75 : Mn _0.25 Dy _0.03 , Lu _1.92 Sc ₁ Al ₅ O ₆ C ₃ :Ce _0.05 Yb _0.03 , Sm _1.92 La ₁ Al ₅ O ₆ C ₃ :Ce _0.05 Ho _0.03 , Y _2.32 Gd _0.6 In ₁ Al ₄ O ₆ C ₃ :Ce _0.05 One of Nd _0.03 , Lu _1.95 Pm ₁ Al ₅ O ₆ C ₃ :Ce _0.05 .