TWM473559U - Embedded display touch structure - Google Patents

Description

Inline display touch structure

The present invention relates to a display screen having a touch panel, and more particularly to an in-line display touch structure.

Modern consumer electronic devices are often equipped with a touchpad as one of their input devices. The touchpad can be divided into resistive, capacitive, sonic, and optical types according to different sensing principles.

The touch-sensitive flat panel display directly overlaps the touch panel and the flat display, because the laminated touch panel is a transparent panel, so that the image can penetrate the display image of the touch panel stacked thereon. Then use the touch panel as the medium or interface for input. However, this conventional technique is required to increase the total weight of a touch panel when superimposing, so that the weight of the flat display is greatly increased, which does not meet the requirements of the current market for the lightness and thinness of the display. When the touch panel and the flat display are directly stacked, the thickness of the touch panel itself is increased, the light transmittance is reduced, and the reflectance and the haze are increased, so that the quality of the screen display is greatly reduced.

In response to the aforementioned shortcomings, the touch flat panel display is embedded and embedded. Touch technology. The main development direction of embedded touch technology can be divided into On-Cell and In-Cell technologies. The On-Cell technology is a structure in which a sensor (sensor) of a projected capacitive touch technology is fabricated on the back side of a color filter (CF) (ie, attached to a polarizing plate surface) and integrated into a color filter. . In-Cell technology puts the sensing electrode into the structure of the thin film transistor layer, for example, the sensing electrode (Sensor) is placed in the structure of the LCD cell. At present, the main sensing methods can be divided into three types: resistance (contact) type, capacitive type and optical type. The resistive type uses the conduction of the upper and lower substrate electrodes of the LCD Cell to calculate the change of voltage partial pressure to determine the contact position coordinate. -Cell Touch's technology is to first make the touch panel sensor on the film, then attach it to the glass of the upper substrate or directly use the transparent conductive material on the substrate.

Out Cell Touch technology is the most common form of plugging the touch panel on the display panel. Resistive and capacitive technologies are commonly used by other touch panel manufacturers, and then with the display panel. Fit and assemble.

In-Cell Touch technology integrates the touch components into the display panel, so that the display panel itself has a touch function, so there is no need to separately attach or assemble the touch panel, so the technology is usually Developed by the panel factory.

However, regardless of In-Cell Touch technology, On-Cell Touch technology, or Out Cell Touch technology, the sensing electrode layer made of transparent conductive material (ITO) is provided on the upper glass substrate or the lower glass substrate of the display panel, which not only increases the cost. , also increased process procedures, easily lead to reduced process yield And the cost of the process has soared, and the need for a stronger backlight due to the decrease in aperture ratio will also increase power consumption, which is not conducive to the low power consumption of mobile devices. Therefore, there is still room for improvement in the conventional touch display panel structure.

The main purpose of the present invention is to provide an in-line display touch structure, which can greatly save material cost and processing cost; since the sensing electrode layer made of transparent conductive material (ITO) is not required on the upper glass substrate or the lower glass substrate of the display panel. According to this, the cost can be reduced and the process procedure can be reduced.

According to one of the features of the present invention, the present invention proposes an in-cell display touch structure comprising an upper substrate, a lower substrate, a light shielding layer, and a thin film transistor and a sensing electrode layer. The upper substrate and the lower substrate are arranged in a parallel pair to sandwich a display material layer between the two substrates. The light shielding layer is located on a surface of the upper substrate opposite to the display material layer, and the light shielding layer is composed of a plurality of light shielding lines. The thin film transistor and the sensing electrode layer are located on a surface of the lower substrate opposite to one side of the display material layer, wherein the thin film transistor and the sensing electrode layer have a gate driving line sublayer and a source driving line Floor. The gate driving line sub-layer has a plurality of gate driving lines and a plurality of first sensing conductor lines, wherein the plurality of gate driving lines are disposed according to a first direction, and the plurality of first sensing conductor lines are according to the first One direction is set and parallel to the plurality of gate drive lines; The source driving line sublayer is located on a surface of the gate driving line sublayer on one side of the display material layer, and has a plurality of source driving lines and a plurality of second sensing conductor lines, the plurality of source lines The drive line is based on a second direction The plurality of second sensing conductor lines are disposed according to the second direction and parallel to the plurality of source driving lines; wherein the plurality of first sensing conductor lines and the plurality of second sensing conductor lines are located And corresponding to the position of the plurality of light shielding lines of the light shielding layer.

According to another feature of the present invention, the present invention proposes an in-cell display touch structure comprising an upper substrate, a lower substrate, a thin film transistor and a sensing electrode layer. The upper substrate and the lower substrate are sandwiched between two substrates by a parallel pair arrangement. The thin film transistor and the sensing electrode layer are located on a surface of the lower substrate opposite to one side of the display material layer, wherein the thin film transistor and the sensing electrode layer have a gate driving line sublayer and a source driving line Sublayer. The gate driving line sub-layer has a plurality of gate driving lines and a plurality of first sensing conductor lines, wherein the plurality of gate driving lines are disposed according to a first direction, and the plurality of first sensing conductor lines are according to the first One direction is set and parallel to the plurality of gate drive lines. The source driving line sublayer is located on a surface of the gate driving line sublayer on one side of the display material layer, and has a plurality of source driving lines and a plurality of second sensing conductor lines, the plurality of source lines The driving line is disposed according to the second direction, and the plurality of second sensing conductor lines are disposed according to the second direction and parallel to the plurality of source driving lines; wherein the plurality of first sensing conductor lines and the plurality of lines The second sensing conductor line forms a mutual capacitance touch sensing plane.

100‧‧‧In-cell touch display panel structure

110‧‧‧Upper substrate

120‧‧‧lower substrate

130‧‧‧Display material layer

140‧‧‧Lighting layer

150‧‧‧Thin-film transistor and sensing electrode layer

160‧‧‧Color filter layer

170‧‧‧Protective layer

180‧‧‧Common electrode layer

190‧‧‧First polarizing layer

200‧‧‧Second polarizing layer

151‧‧‧Optoelectronics

250‧‧‧ shading lines

260‧‧‧ area

310‧‧‧ gate drive line

320‧‧‧First induction conductor line

330‧‧‧Source drive line

340‧‧‧Second induction conductor line

350‧‧‧Optoelectronics

360‧‧‧Pixel area

410‧‧‧First insulation zone

420‧‧‧Second insulation zone

60-1, 60-2, 60-3‧‧‧ Trace

80-1‧‧‧Wiring

101‧‧‧ side

600‧‧‧Soft circuit board

610‧‧‧Control circuit

700‧‧‧Inline display touch structure

730‧‧‧Display material layer

760‧‧‧ cathode layer

770‧‧‧anode layer

750‧‧‧thin film layer

751‧‧‧ pixel drive circuit

7511‧‧‧ gate

7513‧‧‧bungee/source

7515‧‧‧汲 pole/source

771‧‧‧anode element electrode

731‧‧‧ hole transmission sublayer

733‧‧‧Lighting layer

735‧‧‧Electronic transmission sublayer

733-1‧‧‧Red luminescent layer

733-2‧‧‧Blue light layer

733-3‧‧‧Green light layer

1 is a schematic diagram of a stack of an embodiment of an embedded display touch structure of the present invention.

Figure 2 is a schematic illustration of a conventional conventional light shielding layer.

Fig. 3 is a schematic view showing the film transistor and the sensing electrode layer of the present invention.

4A and 4B are cross-sectional views taken along line AA' of Fig. 3.

Figure 5 is a schematic diagram of a plurality of sensing conductor lines of the present invention.

6 is a schematic diagram of the present light shielding layer and the plurality of first sensing conductor lines and the plurality of second sensing conductor lines.

FIG. 7 is another schematic diagram of the first sensing conductor line and the second sensing conductor line.

Figure 8 is a schematic illustration of a stacking of another embodiment of the present invention.

Figure 9 is a schematic illustration of a stacking of yet another embodiment of the present invention.

This creation is about an inline display touch structure. 1 is a schematic diagram of a stacked embodiment of an in-cell touch display structure. As shown in FIG. 1 , the in-cell touch display panel structure 100 includes an upper substrate 110 , a lower substrate 120 , and a display material . The layer 130, a black matrix 140, a thin film transistor and a sensing electrode layer 150, a color filter 160, an over coat 170, and a common electrode layer (Vcom) 180 A first polarizer layer 190 and a second lower polarizer layer 200.

The upper substrate 110 and the lower substrate 120 are preferably glass substrates, and the upper substrate 110 and the lower substrate 120 are arranged in parallel pairs. The material layer 130 is sandwiched between the two substrates 110, 120. In the embodiment, the display material layer 130 is a liquid crystal layer.

The black matrix 140 is located on a surface of the upper substrate 110 on one side of the display material layer 130, and the light shielding layer 140 is composed of a plurality of light shielding lines.

Figure 2 is a schematic illustration of a conventional conventional light shielding layer. As shown in FIG. 2, the conventional light-shielding layer 140 is formed by a line of opaque black insulating material, and a plurality of light-shielding lines 250 are disposed. The plurality of light-shielding lines 250 of the black insulating material are vertically distributed to the conventional light-shielding layer. 140, the conventional light shielding layer 140 is also referred to as a black matrix. A region 260 between the lines of the black insulating material is distributed with a color filter.

A conventional thin film transistor layer (TFT) is located on a surface of the lower substrate 120 on the same side with respect to the display material layer 130. The conventional thin film transistor layer is composed of a thin film transistor 151 and a transparent electrode.

In the conventional thin film transistor layer (TFT), a plurality of first sensing conductor lines are disposed beside a plurality of gate driving lines, and a plurality of second sensing conductor lines are disposed beside the plurality of source driving lines. Thus, the thin film transistor and the sensing electrode layer 150 of the present invention are formed, so that it is not necessary to provide a sensing electrode layer made of a transparent conductive material (ITO) on the upper glass substrate or the lower glass substrate of the LCD display panel, thereby reducing the cost and reducing the cost. Process procedures to increase process yield and reduce process costs. In this case, the thin film transistor and the sensing electrode layer 150 are located on a surface of the lower substrate 120 facing one side of the display material layer 130. The thin film transistor and the sensing electrode layer 150 have a gate driving line sublayer and a source driving line sublayer.

3 is a schematic view of the inventive thin film transistor and sensing electrode layer 150. It is a schematic view seen from the direction of the upper substrate 110 toward the direction of the lower substrate 120. The thin film transistor and sensing electrode layer 150 has a gate driving line sublayer (not shown) and a source driving line sublayer (not shown).

The gate driving line sub-layer has a plurality of gate driving lines 310 and a plurality of first sensing conductor lines 320. The plurality of gate driving lines 310 are disposed according to a first direction (X), and the plurality of first sensing lines The conductor line 320 is disposed in accordance with the first direction (X) and is parallel to the plurality of gate drive lines 310. As shown in FIG. 3, the gate drive line sub-layer is indicated by oblique lines.

The source driving line sublayer is located on a surface of the gate driving line sublayer on one side of the display material layer 130, and has a plurality of source driving lines 330 and a plurality of second sensing conductor lines 340, the plurality of lines The source driving line 330 is disposed according to a second direction (Y), and the plurality of second sensing conductor lines 340 are disposed according to the second direction (Y) and parallel to the plurality of source driving lines 330. As shown in FIG. 3, the source drive line sub-layer is indicated by a backslash. Wherein, the first direction (X) is substantially perpendicular to the second direction (Y). The plurality of first sensing conductor lines 320 and the plurality of second sensing conductor lines 340 form a mutual capacitance touch sensing plane.

The light-shielding line 250 of the light-shielding layer 140 is also shown in FIG. 3. Since the light-shielding line 250 does not belong to the thin film transistor and the sensing electrode layer 150, it is shown by a broken line. As shown in FIG. 3 , the positions of the plurality of first sensing conductor lines 320 and the plurality of second sensing conductor lines 340 are set according to positions of the plurality of light shielding lines 250 of the light shielding layer 140 . That is, the line width d2 of the source driving line 330 plus the line width d1 of the second sensing conductor line 340 plus The spacing s of the upper source driving line 330 and the second sensing conductor line is preferably less than or equal to the line width D of the light shielding line 250. In the present embodiment, d1+d2+s<D. At the same time, the positions of the gate driving line 310 and the source driving line 330 are also set according to the positions of the plurality of light shielding lines 250 of the light shielding layer 140, so that the direction from the upper substrate 110 to the lower substrate 120 When viewed in the past, the gate drive line 310, the first sense conductor line 320, the source drive line 330, and the second sense conductor line 340 are covered by the light-shielding line 250. The thin film transistor and the sensing electrode layer 150 further have a plurality of transistors 350 and a plurality of pixel regions 360.

4A and 4B are cross-sectional views taken along line AA' of Fig. 3. As shown in FIG. 4A, the gate driving line 310 is disposed on the lower substrate 120, and a first insulating region 410 is disposed on the gate driving line 310 to allow the source driving line 330 and the second sensing conductor line 340 and the gate. The pole drive line 310 and the first sense conductor line 320 are insulated. A second insulating region 420 is disposed over the source driving line 330 and the second sensing conductor line 340. In FIG. 4B, the first insulating region 410 mainly insulates the source driving line 330 and the second sensing conductor line 340 from the gate driving line 310 and the first sensing conductor line 320. Therefore, it is only necessary to provide an insulating region at the intersection. Just fine.

FIG. 5 is a schematic view showing a plurality of sensing conductor lines of the present invention, which are viewed from the direction of the upper substrate 110 toward the lower substrate 120. As shown in FIG. 5, the plurality of first sensing conductor lines 320 and the plurality of second sensing conductor lines 340 of the thin film transistor and the sensing electrode layer 150 are respectively in a first direction (X) and a second direction. (Y) setting. Wherein the first direction is perpendicular to the second direction. The plural of the thin film transistor and the sensing electrode layer 150 The strip first inductive conductor line 320 and the plurality of second inductive conductor lines 340 are made of a metal conductive material. Wherein, the metal conductive material is one of the following: chromium, bismuth, aluminum, silver, copper, titanium, nickel, bismuth, cobalt, tungsten, magnesium, calcium, potassium, lithium, indium, and alloys thereof, lithium fluoride , magnesium fluoride, lithium oxide.

FIG. 6 is a schematic diagram of the light-shielding layer 140, the plurality of first sensing conductor lines 320, and the plurality of second sensing conductor lines 340, which are viewed from the direction of the lower substrate 120 toward the upper substrate 110. As shown in FIG. 6 , when the user looks in the direction of the lower substrate 120 from the direction of the upper substrate 110 , the light shielding line 250 will be the source driving line 330 , the second sensing conductor line 340 , the gate driving line 310 , The first sensing conductor line 320 is hidden, and the user does not see the source driving line 330, the second sensing conductor line 340, the gate driving line 310, and the first sensing conductor line 320.

FIG. 7 is another schematic diagram of the first inductive conductor line 320 and the second inductive conductor line 340. In FIG. 7, the first inductive conductor lines 320 in the first direction are first routed via the traces 60-1, 60. The electrical connections of -2, 60-3 are further extended by a trace 80-1 to one side 101 of the inline display touch structure 100 for further connection to a control circuit 610 of a flexible circuit board 600. That is, the first sensing conductor lines 320 of the plurality of strips in the first direction can be electrically connected first as an inductive electrode, which can increase the sensing area of the single sensing electrode and increase the inductive power of the single sensing electrode. The control device 610 easily detects a touch. Similarly, the three second sensing conductor wires 340 in the second direction may be electrically connected first through the wires, and will not be described in detail.

The color filter layer 160 is located on a surface of the light shielding layer 140 on one side of the display material layer 130. The common electrode layer 180 is located The upper substrate 110 is between the upper substrate 120 and the lower substrate 120. The first polarizing layer 190 is located on the surface of the upper substrate 110 on the other side of the display material layer 130. The second polarizing layer 200 is located on a surface of the lower substrate 120 opposite to one side of the display material layer 130.

FIG. 8 is a schematic diagram of a stack of another embodiment of the present invention, which is a schematic diagram of a stack of embedded display touch structures 700. As shown, the in-cell display touch structure 700 includes an upper substrate 110, a lower substrate 120, a display material layer 730, a black matrix 140, a thin film transistor and a sensing electrode layer 750, and a color. A color filter 160, an over coat 170, a cathode layer 760, and an anode layer 770.

The main difference between FIG. 8 and FIG. 1 is the display material layer 730, the cathode layer 760, the anode layer 770, and the thin film transistor layer 750.

The upper substrate 110 and the lower substrate 120 are preferably a glass substrate or a plastic substrate. The upper substrate 110 and the lower substrate 120 are disposed in parallel with each other to sandwich the display material layer 730 between the two substrates 110 and 120. The display material layer 730 is preferably composed of an organic light emitting diode.

In this embodiment, in the thin film transistor layer, a plurality of first sensing conductor lines are disposed beside the plurality of gate driving lines, and a plurality of second sensing conductor lines are disposed beside the plurality of source driving lines, thereby forming the present invention. The thin film transistor and the sensing electrode layer 750, in this way, it is not necessary to provide a sensing electrode layer made of a transparent conductive material on the upper glass substrate or the lower glass substrate of the display panel, thereby reducing the cost, reducing the process procedure, improving the process yield and reducing Process cost.

The plurality of gate driving lines 310 of the thin film transistor and the sensing electrode layer 750, the plurality of first sensing conductor lines 320, and the plurality of source driving lines 330, and the details of the plurality of second sensing conductor lines 340 are as disclosed in the first embodiment and FIG. 3 to FIG. 6, which can be completed by those skilled in the art based on the disclosure of the first embodiment of the present invention. No longer.

The thin film transistor and the sensing electrode layer 750 are located on the surface of the lower substrate 120 facing the display material layer 730. The thin film transistor and the sensing electrode layer 750 have a plurality of gate driving lines (not shown) and a plurality of strips. a source driving line (not shown), a plurality of first sensing conductor lines (not shown) disposed along the first direction (X), and the plurality of second sensing conductors disposed along the second direction (Y) a pixel (not shown) and a plurality of pixel driving circuits 751, each of the pixel driving circuits 751 corresponding to a pixel, according to a display pixel signal and a display driving signal, for driving the corresponding pixel driving circuit 751, and then perform a display operation.

According to the design of the pixel driving circuit 751, for example, the 2T1C system is designed by a thin film transistor and a storage capacitor to form a pixel driving circuit, and the 6T2C is a pixel driving circuit designed by a 6 thin film transistor and a 2 storage capacitor. The gate 7511 of at least one thin film transistor of the pixel driving circuit 751 is connected to a gate driving line (not shown). According to the design of the driving circuit, at least one thin film transistor has a drain/source 7513 in the control circuit. Connected to a source driving line (not shown), a drain/source 7515 of at least one thin film transistor in the pixel driving circuit 751 is connected to a corresponding anode pixel electrode 771 in the anode layer 770.

The cathode layer 760 is located on a surface of the upper substrate 110 facing the side of the display material layer 730. At the same time, the cathode layer 760 is located between the upper substrate 110 and the display material layer 730. The cathode layer 760 is electrically conductive by metal The material is formed. Preferably, the cathode layer 760 is formed of a metal material having a thickness of less than 50 nanometers (nm) selected from one of the group consisting of aluminum (Al), silver (Ag), and magnesium (Mg). ), calcium (Ca), potassium (K), lithium (Li), indium (In), an alloy of the above materials or a combination of lithium fluoride (LiF), magnesium fluoride (MgF2), lithium oxide (LiO) and Al Made. Since the thickness of the cathode layer 760 is less than 50 nm, the light generated by the display material layer 730 can still penetrate the cathode layer 760 to display an image on the upper substrate 110. The cathode layer 760 is electrically connected to the entire sheet and thus can be used as a shield. At the same time, the cathode layer 760 also receives current from the anode pixel electrode 771.

The anode layer 770 is located on one side of the thin film transistor and the sensing electrode layer 750 on the display material layer 730. The anode layer 770 has a plurality of anode pixel electrodes 771. Each anode pixel electrode of the plurality of anode pixel electrodes 771 corresponds to a pixel driving transistor of the pixel driving circuit 750 of the thin film transistor and the sensing electrode layer 750, that is, the plurality of anode pixels Each anode pixel electrode of the electrode is connected to a source/drain of the pixel driving transistor of the corresponding pixel driving circuit 751 to form a pixel electrode of a specific color, such as a red pixel electrode, green A pixel electrode, or a blue pixel electrode or a white pixel electrode used in the present case.

The display material layer 730 includes a hole transporting layer (HTL) 731, an emission layer 733, and an electron transporting layer (HTL) 735. The display material layer 730 preferably produces white light and is filtered using the color filter 160 to produce three primary colors of red, blue, and green.

Figure 9 is a schematic view of a stacking of another embodiment of the present invention, It is a schematic diagram of a stack of embedded display touch structures 800. As shown, the in-cell touch display structure 800 includes an upper substrate 110, a lower substrate 120, a display material layer 730, a thin film transistor and sensing electrode layer 750, a cathode layer 760, and an anode layer 770. The main difference between FIG. 9 and FIG. 8 is that, in FIG. 9, the red light-emitting layer 733-1, the blue light-emitting layer 733-2, and the green light-emitting layer 733-3 are used, so that it is not necessary to use a black matrix 140, one. A color filter 160 and an over coat 170.

The electrode layer made of indium tin oxide (ITO) has an average light transmittance of only about 90%, and the source driving line 330 of the present invention or the second sensing conductor line 340 and the gate driving thereof are matched. The line 310 or the first inductive conductor line 320 matched thereto is disposed at a relative position of a conventional gate driving line or a source driving line, and thus is blocked by the light shielding line 250, and does not affect the light transmittance. The average light transmittance of this creation is much better than the prior art. When the in-line display touch structure of the present invention is combined with a liquid crystal display panel or an organic light emitting diode display panel, the brightness of the panels can be made brighter than conventional techniques.

As can be seen from the foregoing description, the present invention can form a first inductive conductor line 320 in a first direction (X) or a second inductive conductor line 340 in a second direction (Y) on the thin film transistor and the sensing electrode layer 150. The advantage is that the sensing electrode layer made of the upper glass substrate or the lower glass substrate (ITO) of the display panel is not required, thereby reducing the cost and reducing the process procedure.

At the same time, on the reticle defining the conventional plurality of gate drive lines 310, the first sense conductor line 320 of the first direction (X) of the present creation can be simultaneously defined. On the reticle defining the conventional plurality of source drive lines 330, the second sense conductor line 340 of the second direction (Y) of the present creation can be simultaneously defined. According to this Adding a manufacturing process allows the LCD panel to have a touch function without adding a new process.

The above-described embodiments are merely examples for convenience of description, and the scope of the claims is intended to be limited to the above embodiments.

250‧‧‧ shading lines

310‧‧‧ gate drive line

320‧‧‧First induction conductor line

330‧‧‧Source drive line

340‧‧‧Second induction conductor line

350‧‧‧Optoelectronics

360‧‧‧Pixel area

Claims (14)

An in-cell display touch structure includes: an upper substrate; a lower substrate, wherein the upper substrate and the lower substrate are disposed in parallel pairs to sandwich a display material layer between the two substrates; a light shielding layer is located at the a surface of the upper substrate opposite to the same side of the display material layer, the light shielding layer is composed of a plurality of light shielding lines; and a thin film transistor and a sensing electrode layer on a side of the lower substrate for one side of the display material layer The surface of the thin film transistor and the sensing electrode layer has a gate driving line sublayer having a plurality of gate driving lines and a plurality of first sensing conductor lines, wherein the plurality of gate driving lines are based on a first direction, the plurality of first sensing conductor lines are disposed according to the first direction and parallel to the plurality of gate driving lines; and a source driving line sublayer is located at the gate driving line sublayer a surface of one side of the display material layer having a plurality of source driving lines and a plurality of second sensing conductor lines, the plurality of source driving lines being disposed according to a second direction, the plurality of The sensing conductor line is disposed according to the second direction and parallel to the plurality of source driving lines; wherein the plurality of first sensing conductor lines and the plurality of second sensing conductor lines are located according to the light shielding layer The position of most of the shading lines is set correspondingly. The in-cell touch display structure of claim 1, wherein the plurality of gate drive lines and the plurality of source drive lines are located according to a position of the plurality of light-shielding lines of the light-shielding layer Set accordingly. The in-cell touch display structure of claim 2, wherein the plurality of first sensing conductor lines and the plurality of second sensing conductor lines are made of a metal conductive material. The in-cell touch display structure according to claim 3, wherein the metal conductive material is one of the following: chromium, bismuth, aluminum, silver, copper, titanium, nickel, lanthanum, cobalt, tungsten, Magnesium, calcium, potassium, lithium, indium, and alloys thereof, lithium fluoride, magnesium fluoride, lithium oxide. The in-cell display touch structure as described in claim 1, wherein the display material layer is composed of liquid crystal. The in-cell touch display structure of claim 5, further comprising: a color filter layer on a surface of the light shielding layer on the same side of the display material layer; a common electrode layer, Between the upper substrate and the lower substrate; a first polarizing layer on a surface of the upper substrate opposite to the other side of the display material layer; and a second polarizing layer on the surface of the lower substrate The surface of the other side of the display material layer. The in-cell touch display structure according to claim 1, wherein the display material layer is composed of an organic light emitting diode. The in-cell display touch structure as described in claim 4, wherein the first direction is perpendicular to the second direction. The in-cell touch display structure of claim 8, wherein the plurality of first sensing conductor lines and the plurality of second sensing conductor lines form a mutual capacitive touch sensing plane. An in-line display touch structure includes: an upper substrate; a substrate, the upper substrate and the lower substrate are disposed in a parallel pair arrangement to sandwich a display material layer between the two substrates; a thin film transistor and a sensing electrode layer on the surface of the lower substrate for the display material layer a surface of the one side, wherein the thin film transistor and the sensing electrode layer have: a gate driving line sublayer having a plurality of gate driving lines and a plurality of first sensing conductor lines, the plurality of gate driving lines According to a first direction, the plurality of first sensing conductor lines are disposed according to the first direction and parallel to the plurality of gate driving lines; and a source driving line sublayer is located at the gate driving line a surface of the sub-layer having a plurality of source driving lines and a plurality of second sensing conductor lines on a side of the display material layer, the plurality of source driving lines being disposed according to a second direction, the plurality of The second sensing conductor line is disposed according to the second direction and parallel to the plurality of source driving lines; wherein the plurality of first sensing conductor lines and the plurality of second sensing conductor lines form a mutual capacitive touch sense Measurement Surface. The in-cell touch display structure of claim 10, wherein the plurality of first sensing conductor lines and the plurality of second sensing conductor lines are made of a metal conductive material. The in-cell touch display structure according to claim 11, wherein the metal conductive material is one of the following: chromium, bismuth, aluminum, silver, copper, titanium, nickel, lanthanum, cobalt, tungsten, Magnesium, calcium, potassium, lithium, indium, and alloys thereof, lithium fluoride, magnesium fluoride, lithium oxide. The in-cell touch display structure according to claim 12, wherein the display material layer is composed of an organic light emitting diode. The in-cell display touch structure of claim 13, wherein the first direction is perpendicular to the second direction.