TWM461635U - Crucible unit for crystal growth - Google Patents
Crucible unit for crystal growth Download PDFInfo
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- TWM461635U TWM461635U TW102207965U TW102207965U TWM461635U TW M461635 U TWM461635 U TW M461635U TW 102207965 U TW102207965 U TW 102207965U TW 102207965 U TW102207965 U TW 102207965U TW M461635 U TWM461635 U TW M461635U
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Description
本新型是有關於一種坩堝單元(crucible unit),特別是指一種用於長晶的坩堝單元。The present invention relates to a crucible unit, and more particularly to a unit for a crystal.
多晶矽(polycrystalline Si)的晶粒尺寸(grain size)及形態影響到太陽能電池(solar cell)的性能。晶粒尺寸適中(如約10 mm)且均一的多晶矽晶片(Si wafer)有助於提高太陽能電池的光電轉化效率(photon-to-current conversion efficiency;PCE)。然而,此技術領域的相關技術人員皆知,欲得到晶粒尺寸適中且均一的晶粒,主要是取決於晶碇(ingot)在成長過程中,其初始的成核(nucleation)是否控制得當。The grain size and morphology of polycrystalline Si affect the performance of solar cells. A uniform silicon wafer size (eg, about 10 mm) and a uniform polysilicon wafer (Si wafer) contributes to improving the photon-to-current conversion efficiency (PCE) of the solar cell. However, it is well known to those skilled in the art that a grain size that is moderate and uniform in grain size is primarily dependent on whether the initial nucleation of the ingot is properly controlled during growth.
就成長一多晶矽晶碇的技術簡單地來說(圖未示),其主要是先將一矽原料放置在一石英(quartz)坩堝內並高溫加熱該矽原料,使石英坩堝內的矽原料因高溫而融解成一矽熔湯;進一步地,透過該石英坩堝下方所設置的一定向取熱塊來對該矽熔湯進行吸熱,使該矽熔湯自該石英坩堝底部朝上漸漸地凝固以成長出該多晶矽晶碇。The technique for growing a polycrystalline germanium is simply (not shown), which is mainly to place a raw material in a quartz crucible and heat the crucible at a high temperature to cause the crucible material in the quartz crucible. Melting into a molten soup at a high temperature; further, absorbing the heat through the fixed heat block disposed under the quartz crucible, so that the molten soup gradually solidifies from the bottom of the quartz crucible to grow upward The polycrystalline germanium is emitted.
此技術領域的相關技術人員當知,由於晶體的 法向生長速率(normal growth rate,Rn=c.△T)是與熔湯的過冷度(undercooling,△T)呈線性關係。所謂熔湯的過冷度(△T),指的是晶碇在定向凝固成長的成核期,晶核(nucleus of crystalline)在石英坩堝底部內外的溫度差。一旦石英坩堝底部的厚度相同時,晶核在石英坩堝底部內外的溫度差便相同。因此,多晶矽晶碇在定向凝固成長過程中的成核期,石英坩堝底部便會不均勻地隨機形成出一層雜亂分佈的晶核。也正因為晶核的雜亂分佈以致於晶核在晶粒成長的過程中,往往會受到周圍其他相似晶粒的束縛,因而沒有充分自由的成長空間,使得晶粒的成長受到限制,導致最終得到的晶粒尺寸不均。為解決晶粒尺寸不均的問題,此技術領域的相關技術人員近幾年來也提出了一些解決的方案。Those skilled in the art are aware of the crystal The normal growth rate (Rn=c.ΔT) is linear with the undercooling (ΔT) of the melt. The degree of subcooling (ΔT) of the so-called melt soup refers to the temperature difference between the nucleus of crystalline and the inside and outside of the quartz crucible during the nucleation phase of the directional solidification growth. Once the thickness of the bottom of the quartz crucible is the same, the temperature difference between the inside and outside of the quartz crucible is the same. Therefore, during the nucleation period of the polycrystalline twins during the directional solidification growth process, the bottom of the quartz crucible will randomly form a random distribution of crystal nuclei. It is also because of the disordered distribution of crystal nuclei that the crystal nuclei tend to be bound by other similar grains in the process of grain growth, so there is not enough free growth space, so that the growth of crystal grains is limited, resulting in the final The grain size is not uniform. In order to solve the problem of uneven grain size, those skilled in the art have also proposed some solutions in recent years.
參圖1與圖2,大陸第CN201962402 U授權公告號實用新型專利案公開一種多晶矽鑄碇用石英坩堝1。該多晶矽鑄碇用石英坩堝1包括:一個底壁11及一個圍繞該底壁11的圍壁12,並由該底壁11與該圍壁12共同界定出一個容置矽原料(圖未示)的容置空間10。該底壁11形成有多數個自該底壁11的一上表面朝下相間隔地凹陷的圓錐形凹坑111。該多晶矽鑄碇用石英坩堝1之各圓錐形凹坑111設計的主要目的是在於,形成粗大且均勻的矽晶粒,進而提高多晶矽太陽能電池片的光電轉換效率。Referring to Fig. 1 and Fig. 2, the utility model patent of the CN201962402 U authorized bulletin No. discloses a quartz crucible for polycrystalline silicon casting. The polycrystalline silicon crucible for quartz crucible 1 comprises: a bottom wall 11 and a surrounding wall 12 surrounding the bottom wall 11, and the bottom wall 11 and the surrounding wall 12 together define a receiving material (not shown). The accommodation space is 10. The bottom wall 11 is formed with a plurality of conical recesses 111 recessed from an upper surface of the bottom wall 11 at intervals. The main purpose of the design of each conical pit 111 of the quartz crucible 1 for polycrystalline tantalum casting is to form coarse and uniform niobium grains, thereby improving the photoelectric conversion efficiency of the polycrystalline silicon solar cell sheet.
然而,該底壁11中的圓錐形凹坑111設計大多為尖銳輪廓;因此,該底壁11的應力集中因子(stress concentration factor)高。採用該多晶矽鑄碇用石英坩堝1來製造成長矽晶鑄錠時,該底壁11容易因其本身材質與矽熔湯兩者間的高熱膨脹係數(thermal expansion coefficient)差而誘發裂縫,進而使得該多晶矽鑄碇用石英坩堝1破裂,並導致矽熔湯溢流的風險。However, the conical recess 111 in the bottom wall 11 is mostly designed to have a sharp profile; therefore, the stress concentration factor of the bottom wall 11 (stress Concentration factor) is high. When the polycrystalline tantalum cast quartz crucible 1 is used to produce a grown twine ingot, the bottom wall 11 is liable to induce cracks due to a difference in thermal expansion coefficient between the material and the tantalum melt, thereby causing cracks. The polycrystalline crucible is broken with a quartz crucible 1 and causes a risk of overflowing the crucible.
參圖3與圖4,中華民國第M444886證書號新型專利案公開一種用於製造矽晶鑄碇之鑄造模2。該用於製造矽晶鑄碇之鑄造模2,包括:一個底壁21及一個圍繞該底壁21的圍壁22,並由該底壁21與該圍壁22共同界定出一容置矽熔湯(圖未示)的容置空間20。該底壁21形成有多數個自該底壁21之一上表面朝下相間隔地凹陷的弧形凹坑211;其中,各弧形凹坑211的尺寸是介於5 mm至10 mm間,且兩相鄰弧形凹坑211的間距是介於0.1 mm至10 mm間。該用於製造矽晶鑄碇之鑄造模2主要是利用該底壁21的各弧形凹坑211,以避免該底壁21於矽晶鑄碇的製造時誘發出裂縫,進而降低矽熔湯溢流的風險。Referring to Fig. 3 and Fig. 4, the new patent of the Republic of China No. M444886 certificate discloses a casting mold 2 for manufacturing a twin casting. The casting mold 2 for manufacturing a twine casting mold comprises: a bottom wall 21 and a surrounding wall 22 surrounding the bottom wall 21, and the bottom wall 21 and the surrounding wall 22 together define a receiving melting point The accommodation space of the soup (not shown) is 20. The bottom wall 21 is formed with a plurality of arcuate recesses 211 recessed from the upper surface of the bottom wall 21 at intervals. wherein the arcuate recesses 211 are between 5 mm and 10 mm in size. And the distance between two adjacent arcuate dimples 211 is between 0.1 mm and 10 mm. The casting mold 2 for manufacturing the twin-crystal casting shovel mainly utilizes the arc-shaped recesses 211 of the bottom wall 21 to prevent the bottom wall 21 from inducing cracks during the manufacture of the twin-crystal casting boring, thereby reducing the simmering soup. The risk of overflow.
然而,該等弧形凹坑211佈滿於該鑄造模2的底壁21;相對地,最終所完成的矽晶鑄碇的底部也會在各弧形凹坑211對應處,形成有多數個外觀互補於各弧形凹坑211的弧形凸塊(圖未示)。因此,此等佈滿於矽晶鑄碇底部的弧形凸塊也導致該矽晶鑄碇在縱向垂直切割(squaring)過程中,因各弧形凸塊所殘存的內應力而導致矽晶鑄碇崩裂。因此,該等弧形凹坑211的設計無形中也降低了矽晶鑄碇的有效使用率。However, the arcuate dimples 211 are filled with the bottom wall 21 of the casting mold 2; oppositely, the bottom of the finally completed twin-shaped casting crucible is also formed at the corresponding portion of each of the arc-shaped dimples 211, and a plurality of The appearance is complementary to the arcuate bumps of each of the arcuate recesses 211 (not shown). Therefore, the arc-shaped bumps which are filled on the bottom of the twin-crystal cast enamel also cause the twin-crystal cast slab to undergo twinning during the longitudinal squaring process due to the internal stress remaining in each of the curved bumps.碇 cracked. Therefore, the design of the arcuate dimples 211 invisibly reduces the effective utilization of the twinned casts.
經上述說明可知,改良長晶用的坩堝結構以使得晶碇於成核期所形成的晶核得以較為均勻地分布於坩堝底部,並提高晶核在晶粒成長過程中的成長空間,以避免晶粒的成長受到限制,同時亦提升晶碇的有效使用率,是此技術領域的相關技術人員所待突破的課題。According to the above description, the ruthenium structure for the crystal growth is improved so that the crystal nucleus formed during the nucleation period of the crystal nucleus is more uniformly distributed at the bottom of the crucible, and the growth space of the crystal nucleus during the grain growth process is increased to avoid The growth of crystal grains is limited, and the effective use rate of crystal grains is also improved, which is a subject to be solved by those skilled in the technical field.
因此,本新型之目的,即在提供一種用於長晶的坩堝單元。Therefore, it is an object of the present invention to provide a germanium unit for a crystal growth.
於是本新型用於長晶的坩堝單元,是用於成長一多晶晶碇。該多晶晶碇是依序經縱向切割成多數個晶磚(brick)並橫向切片(slicing)成多數個晶片。各晶片表面的形狀實質為一個矩形,各晶片表面具有一對第一邊長及一對第二邊長,該對第一邊長與該對第二邊長是實質分別平行於一第一方向及一第二方向。該用於長晶的坩堝單元包含:一個底壁及一個圍壁。該底壁具有一個二維的平台區陣列,該二維的平台區陣列具有多數個單元。該等單元是沿該第一方向依序設置並沿該第二方向依序設置。每一單元具有一個第一平台區及一個實質圍繞其所對應之第一平台區的第二平台區。該圍壁自該底壁的一周緣向上延伸以圍繞該底壁,並與該底壁共同界定出一個容置空間。Therefore, the novel germanium unit for the growth of the crystal is used for growing a polycrystalline germanium. The polycrystalline silicon wafer is sequentially cut longitudinally into a plurality of bricks and slicing into a plurality of wafers. The surface of each wafer is substantially rectangular in shape, each wafer surface has a pair of first side lengths and a pair of second side lengths, the pair of first side lengths and the pair of second side lengths being substantially parallel to a first direction, respectively And a second direction. The germanium unit for the crystal growth includes: a bottom wall and a surrounding wall. The bottom wall has a two-dimensional array of platform zones having a plurality of cells. The units are sequentially disposed along the first direction and sequentially disposed along the second direction. Each unit has a first platform area and a second platform area substantially surrounding the first platform area corresponding thereto. The surrounding wall extends upward from a peripheral edge of the bottom wall to surround the bottom wall and defines an accommodation space together with the bottom wall.
其中,該二維的平台區陣列的各單元的形狀實質為一個矩形,各單元具有一對平行於該第一方向的第一邊長,及一對平行於該第二方向的第二邊長。各晶片表面的第一邊長與第二邊長是分別大於該二維的平台區陣列的 各單元的第一邊長與第二邊長,且各晶片表面的第一邊長實質是各單元的第一邊長的整數倍,各晶片表面的第二邊長實質是各單元的第二邊長的整數倍。The shape of each unit of the two-dimensional platform area array is substantially a rectangle, and each unit has a pair of first side lengths parallel to the first direction, and a pair of second side lengths parallel to the second direction. . The first side length and the second side length of each wafer surface are respectively larger than the two-dimensional array of the land area The first side length and the second side length of each unit are long, and the first side length of each wafer surface is substantially an integral multiple of the first side length of each unit, and the second side length of each wafer surface is substantially the second of each unit An integer multiple of the side length.
其中,該二維的平台區陣列的各單元的第一平台區與第二平台區,沿該底壁的一厚度方向分別具有一第一厚度T1 與一第二厚度T2 ,T1 <T2 。The first platform area and the second platform area of each unit of the two-dimensional platform area array respectively have a first thickness T 1 and a second thickness T 2 along a thickness direction of the bottom wall, T 1 < T 2 .
本新型之功效在於,藉該底壁之二維的平台區陣列的各第一平台區與各第二平台區的厚度差異,以使得晶碇於成核期所形成的晶核可均勻地分布,且各單元的第一平台區的第一邊長與第二邊長的整數倍實質分別等於各晶片的第一邊長與第二邊長,可避免晶碇於縱向切割時產生崩裂,並提升晶碇的有效使用率。The effect of the novel is that the thickness difference between each first platform region and each second platform region of the two-dimensional platform region array of the bottom wall is such that the crystal nucleus formed by the crystal nucleation during the nucleation period can be uniformly distributed. And the first side length of the first platform region of each unit and the integral multiple of the second side length are substantially equal to the first side length and the second side length of each wafer, respectively, to prevent cracking of the crystal wafer during longitudinal cutting, and Improve the effective use of wafers.
3‧‧‧底壁3‧‧‧ bottom wall
31‧‧‧二維的平台區陣列31‧‧‧Two-dimensional platform area array
311‧‧‧單元311‧‧ units
3111‧‧‧第一平台區3111‧‧‧First platform area
3112‧‧‧第二平台區3112‧‧‧Second platform area
32‧‧‧圍繞區32‧‧‧ surrounding area
4‧‧‧圍壁4‧‧‧ wall
40‧‧‧容置空間40‧‧‧ accommodating space
6‧‧‧多晶矽晶碇6‧‧‧Polycrystalline wafer
61‧‧‧矽晶磚61‧‧‧矽crystalline brick
611‧‧‧矽晶片611‧‧‧矽 wafer
X‧‧‧第一方向X‧‧‧ first direction
Y‧‧‧第二方向Y‧‧‧second direction
Z‧‧‧底壁的厚度方向Z‧‧‧ Thickness direction of the bottom wall
T1 ‧‧‧第一厚度T 1 ‧‧‧first thickness
T2 ‧‧‧第二厚度T 2 ‧‧‧second thickness
S1 ‧‧‧第一邊長S 1 ‧‧‧first side length
S2 ‧‧‧第二邊長S 2 ‧‧‧Second side length
s1 ‧‧‧第一邊長s 1 ‧‧‧first side length
s2 ‧‧‧第二邊長s 2 ‧‧‧Second side length
u1 ‧‧‧第一對角線長u 1 ‧‧‧first diagonal length
u2 ‧‧‧第二對角線長u 2 ‧‧‧Second diagonal length
θ‧‧‧對角Θ‧‧‧ diagonal
本新型之其他的特徵及功效,將於參照圖式的實施方式中清楚地呈現,其中:圖1是一立體圖,說明大陸第CN201962402 U授權公告號實用新型專利案所公開的一種多晶矽鑄碇用石英坩堝;圖2是一局部剖視示意圖,說明該多晶矽鑄碇用石英坩堝內部的圓錐形凹坑;圖3是一俯視示意圖,說明中華民國第M444886證書號新型專利案所公開的一種用於製造矽晶鑄碇之鑄造模;圖4是沿圖3之直線IV-IV所取得的一局部剖視示意圖,說明該用於製造多晶鑄碇之鑄造模內部的弧形凹坑; 圖5是一俯視示意圖,說明本新型用於長晶的坩堝單元的一第一較佳實施例;圖6是沿圖5之直線VI-VI所取得的一局部剖視示意圖,說明本新型該第一較佳實施例之一底壁的一個二維的平台區陣列;圖7是一局部仰視立體圖,說明採用本新型該第一較佳實施例之坩堝單元所製得之一多晶矽晶碇,其依序經縱向垂直切割成矽晶磚並橫向切片成矽晶片後的外觀形狀,及該多晶矽晶碇底部的外觀形貌;圖8是圖5的一局部放大示意圖,說明本新型該第一較佳實施例的底壁的二維平台區陣列的各單元的細部結構;圖9是一俯視示意圖,說明本新型用於長晶的坩堝單元的一第二較佳實施例;及圖10是圖9的一局部放大示意圖,說明本新型該第二較佳實施例的底壁的二維平台區陣列的各單元的細部結構。Other features and effects of the present invention will be apparent from the following description of the drawings, wherein: FIG. 1 is a perspective view showing a polycrystalline silicon casting used in the utility model patent publication CN201962402 U. Fig. 2 is a partial cross-sectional view showing the conical pit inside the quartz crucible for polycrystalline crucible casting; Fig. 3 is a top plan view showing a novel disclosed in the new patent No. M444886 certificate of the Republic of China for A casting mold for manufacturing a twin-shaped cast iron; FIG. 4 is a partial cross-sectional view taken along line IV-IV of FIG. 3, illustrating the arc-shaped pits for the inside of a casting mold for manufacturing a polycrystalline cast strand; Figure 5 is a top plan view showing a first preferred embodiment of the present invention for a long crystal germanium unit; Figure 6 is a partial cross-sectional view taken along line VI-VI of Figure 5, illustrating the novel A two-dimensional array of platform regions of a bottom wall of a first preferred embodiment; FIG. 7 is a partial bottom perspective view showing a polycrystalline silicon germanium produced by using the germanium unit of the first preferred embodiment of the present invention, The appearance shape after longitudinally cutting into a twinned brick and longitudinally slicing into a tantalum wafer, and the appearance of the bottom of the polycrystalline twine; FIG. 8 is a partial enlarged view of FIG. 5, illustrating the first A detailed structure of each unit of the two-dimensional land area array of the bottom wall of the preferred embodiment; FIG. 9 is a top plan view showing a second preferred embodiment of the present invention for a germanium unit of a long crystal; and FIG. Figure 9 is a partially enlarged schematic view showing the detailed structure of each unit of the two-dimensional land area array of the bottom wall of the second preferred embodiment of the present invention.
在本新型被詳細描述之前,應當注意在以下的說明內容中,類似的元件是以相同的編號來表示。Before the present invention is described in detail, it should be noted that in the following description, similar elements are denoted by the same reference numerals.
參閱圖5、圖6與圖7,本新型用於長晶的坩堝單元之第一較佳實施例,是用於成長一多晶矽晶碇6。如圖7所示,該多晶矽晶碇6是依序經縱向垂直切割成多數個矽晶磚61,並橫向切片成多數個矽晶片611。各矽晶片611 表面的形狀實質為一個矩形(rectangle)。各矽晶片611表面具有一對第一邊長S1 及一對第二邊長S2 。該對第一邊長S1 與該對第二邊長S2 是實質分別平行於一第一方向X及一第二方向Y。本新型該第一較佳實施例之用於長晶的坩堝單元包含一個底壁3及一個圍壁4。此處需補充說明的是,任何具有數理背景的技術人員應當知道,矩形是被定義為四個頂角皆為90度的四邊形;因此,長方形及正方形皆屬於本新型中對於矩形的定義。Referring to Figures 5, 6, and 7, a first preferred embodiment of the present invention for a grown germanium unit is for growing a polycrystalline germanium 6. As shown in FIG. 7, the polycrystalline twins 6 are sequentially cut vertically into a plurality of twinned bricks 61 in the longitudinal direction, and are laterally sliced into a plurality of tantalum wafers 611. The shape of the surface of each of the germanium wafers 611 is substantially a rectangle. The surface of each of the germanium wafers 611 has a pair of first side lengths S 1 and a pair of second side lengths S 2 . The pair of first side lengths S 1 and the pair of second side lengths S 2 are substantially parallel to a first direction X and a second direction Y, respectively. The tantalum unit for the growth of the first preferred embodiment of the present invention comprises a bottom wall 3 and a surrounding wall 4. It should be added here that any technician with a mathematical background should know that a rectangle is defined as a quadrilateral with four vertex angles of 90 degrees; therefore, both rectangles and squares belong to the definition of rectangles in the present invention.
參圖8,並配合參閱圖6與圖7,該底壁3具有一個二維的平台區陣列31及一個圍繞區32。該二維的平台區陣列31具有多數個單元311。該等單元311是沿該第一方向X依序設置並沿該第二方向Y依序設置。每一單元311具有一個第一平台區3111,及一個實質圍繞其所對應之第一平台區3111的第二平台區3112。該圍壁4自該底壁31的一周緣向上延伸以圍繞該底壁3,並與該底壁3共同界定出一個容置空間40。Referring to Figure 8, and with reference to Figures 6 and 7, the bottom wall 3 has a two-dimensional array of platform regions 31 and a surrounding region 32. The two-dimensional platform area array 31 has a plurality of cells 311. The units 311 are sequentially disposed along the first direction X and sequentially disposed along the second direction Y. Each unit 311 has a first platform area 3111 and a second platform area 3112 substantially surrounding the first platform area 3111 to which it corresponds. The surrounding wall 4 extends upward from a peripheral edge of the bottom wall 31 to surround the bottom wall 3 and together with the bottom wall 3 defines an accommodating space 40.
該二維的平台區陣列31的各單元311的形狀實質為一個矩形。各單元311具有一對平行於該第一方向X的第一邊長s1 ,及一對平行於該第二方向Y的第二邊長s2 。各矽晶片611表面的第一邊長S1 與第二邊長S2 ,是分別大於該二維的平台區陣列31的各單元311的第一邊長s1 與第二邊長s2 ,且各矽晶片611表面的第一邊長S1 實質是各單元311的第一邊長s1 的整數倍,各矽晶片611表面的第二邊長S2 實質是各單元311的第二邊長s2 的整數倍。The shape of each unit 311 of the two-dimensional platform area array 31 is substantially a rectangle. Each unit 311 has a pair of first side lengths s 1 parallel to the first direction X and a pair of second side lengths s 2 parallel to the second direction Y. The first side length S 1 and the second side length S 2 of the surface of each of the tantalum wafers 611 are larger than the first side length s 1 and the second side length s 2 of each unit 311 of the two-dimensional platform area array 31, respectively. The first side length S 1 of the surface of each of the germanium wafers 611 is substantially an integral multiple of the first side length s 1 of each of the cells 311, and the second side length S 2 of the surface of each of the germanium wafers 611 is substantially the second side of each of the cells 311. An integer multiple of s 2 long.
該二維的平台區陣列31的各單元311的第一平台區3111與第二平台區3112,沿該底壁3的一厚度方向Z,分別具有一第一厚度T1 與一第二厚度T2 ,T1 <T2 。較佳地,T1 <19 mm,T2 >19 mm,且該二維的平台區陣列31的各單元311的第二平台區3112的第二厚度T2 是實質相等。更佳地,T1 是介於14 mm至18 mm間,T2 是介於20 mm至24 mm間。該圍繞區32環圍該二維的平台區陣列31,以使該二維的平台區陣列31至該圍壁4間的距離是介於25 mm至28 mm間。The first platform region 3111 and the second platform region 3112 of each unit 311 of the two-dimensional platform region array 31 have a first thickness T 1 and a second thickness T along a thickness direction Z of the bottom wall 3 respectively. 2 , T 1 <T 2 . Preferably, T 1 <19 mm, T 2 >19 mm, and the second thickness T 2 of the second land region 3112 of each unit 311 of the two-dimensional platform region array 31 is substantially equal. More preferably, T 1 is between 14 mm and 18 mm and T 2 is between 20 mm and 24 mm. The surrounding area 32 surrounds the two-dimensional array of platform regions 31 such that the distance between the array of two-dimensional platform regions 31 to the surrounding walls 4 is between 25 mm and 28 mm.
該二維的平台區陣列31的各單元311的第一平台區3111的形狀實質為一個菱形(rhombus),各第一平台區3111沿該第一方向X與該第二方向Y,分別具有一第一對角線長u1 與一第二對角線長u2 ,各矽晶片611表面的第一邊長S1 實質是各第一平台區3111的第一對角線長u1 的整數倍,且矽各晶片611表面的第二邊長S2 實質是各第一平台區3111的第二對角線長u2 的整數倍。較佳地,該二維的平台區陣列31的各單元311的第一平台區3111,沿該第二方向Y具有一對對角θ,且各對角θ的角度是介於度85至95度間。The shape of the first platform area 3111 of each unit 311 of the two-dimensional platform area array 31 is substantially a rhombic, and each of the first platform areas 3111 has a first direction X and a second direction Y, respectively. The first diagonal length u 1 and a second diagonal length u 2 , the first side length S 1 of the surface of each of the germanium wafers 611 is substantially an integer of the first diagonal length u 1 of each of the first land regions 3111 The second side length S 2 of the surface of each of the wafers 611 is substantially an integer multiple of the second diagonal length u 2 of each of the first land regions 3111. Preferably, the first platform region 3111 of each unit 311 of the two-dimensional platform region array 31 has a pair of diagonal angles θ along the second direction Y, and the angles of the respective diagonal angles θ are between 85 and 95. Degree.
此處需補充說明的是,該第一較佳實施例之底壁3上所分布之各第一平台區3111的形狀與尺寸,主要根據目前常見於各家長晶廠廠內所產出之矽晶片611表面的形狀與尺寸來設計。就目前各家長晶廠廠內所常用的矽晶片611的表面形狀與尺寸而言,其較佳是邊長介於155 mm 至160 mm的正方形,且該等矽晶磚61是呈5×5的二維陣列正交排列。因此,在本新型該第一較佳實施例中,各第一平台區3111的各對角θ的角度是90度,且各矽晶片611表面的矩形與該二維的平台區陣列31的各單元311的矩形是一個正方形,各矽晶片611表面的正方形的邊長S1 、S2 是介於157 mm至158 mm間,且各矽晶片611表面的正方形的邊長,是各單元311的第一平台區3111的第一對角線長u1 (即,等於s1 )與第二對角線長u2 (即,等於s2 )的5倍。It should be additionally noted that the shape and size of each of the first platform regions 3111 distributed on the bottom wall 3 of the first preferred embodiment are mainly based on the current output commonly produced in the parent crystal factory. The shape and size of the surface of the wafer 611 are designed. For the surface shape and size of the tantalum wafer 611 commonly used in various parent crystal factories, it is preferably a square having a side length of 155 mm to 160 mm, and the twin crystal bricks 61 are 5×5. The two-dimensional array is arranged orthogonally. Therefore, in the first preferred embodiment of the present invention, the angles of the respective diagonal angles θ of the first land regions 3111 are 90 degrees, and the rectangles of the surfaces of the respective wafers 611 and the arrays of the two-dimensional platform region array 31 are The rectangle of the unit 311 is a square, and the side lengths S 1 and S 2 of the square of the surface of each of the tantalum wafers 611 are between 157 mm and 158 mm, and the side length of the square of the surface of each of the tantalum wafers 611 is the unit 311. The first diagonal length u 1 of the first platform region 3111 (ie, equal to s 1 ) is five times longer than the second diagonal length u 2 (ie, equal to s 2 ).
由前述說明可知,在本新型該第一較佳實施例中,該底壁3的二維的平台區陣列31的各單元311的第一平台區3111,是被其所對應的第二平台區3112所圍繞,各第二平台區3112的第二厚度T2 是實質相等,而T1 <T2 ;此外,各單元311的形狀與各第一平台區3111的形狀分別為正方形與菱形,且各矽晶片611表面的正方形的邊長,是各單元311的第一平台區3111的第一對角線長u1 (即,等於s1 )與第二對角線長u2 (即,等於s2 )的5倍。換句話說,該二維的平台區陣列31的各單元311的第一平台區3111(各為菱形凹區)周圍,是分別配置有四個菱形凸區(即,各菱形凸區是由相鄰的第二平台區3112所構成)。因此,當本新型該第一較佳實施例被用於成長該多晶矽晶碇6時,正如圖7所顯示般,於該多晶矽晶碇6底部對應至該二維的平台區陣列31之各第一平台區3111(各為菱形凹區)與各第二平台區3112(各為菱形凸區)處,是分別對應形成二維排列設置的多數個菱形凸起區與多數個菱形凹陷區。It can be seen from the foregoing description that in the first preferred embodiment of the present invention, the first platform area 3111 of each unit 311 of the two-dimensional platform area array 31 of the bottom wall 3 is the second platform area corresponding thereto. Surrounded by 3112, the second thickness T 2 of each second platform region 3112 is substantially equal, and T 1 <T 2 ; in addition, the shape of each unit 311 and the shape of each first platform region 3111 are square and rhombic, respectively, and The side length of the square of the surface of each of the germanium wafers 611 is the first diagonal length u 1 of the first land area 3111 of each unit 311 (ie, equal to s 1 ) and the second diagonal length u 2 (ie, equal to 5 times s 2 ). In other words, the first land area 3111 (each of which is a diamond-shaped recessed area) of each unit 311 of the two-dimensional platform area array 31 is respectively arranged with four diamond-shaped convex areas (that is, each diamond-shaped convex area is phased) The adjacent second platform area 3112 is formed). Therefore, when the first preferred embodiment of the present invention is used to grow the polycrystalline germanium 6, as shown in FIG. 7, the bottom of the polycrystalline germanium 6 corresponds to each of the two-dimensional terrace region array 31. A platform area 3111 (each of which is a diamond-shaped recessed area) and each of the second platform areas 3112 (each of which is a diamond-shaped convex area) are respectively corresponding to a plurality of diamond-shaped convex regions and a plurality of diamond-shaped concave regions which are arranged in two dimensions.
此外,本新型該第一較佳實施例還包含一氮化矽(Si3 N4 )塗層(圖未示)。該氮化矽塗層是覆蓋於該底壁3的一上表面與該圍壁4的一內表面,其主要目的是在於,協助該多晶矽晶碇6脫模。該氮化矽塗層並非本新型之技術重點,於此不再多加贅述。但是此處需進一步補充說明的是,為便於在該二維的平台區陣列31上塗佈該氮化矽塗層,本新型該第一較佳實施例上述各菱形凹區與各菱形凸區的各對角θ(90度)處,及沿該第一方向X的兩個對角(也為90度)處,更是進一步地被加工為弧面。In addition, the first preferred embodiment of the present invention further comprises a tantalum nitride (Si 3 N 4 ) coating (not shown). The tantalum nitride coating covers an upper surface of the bottom wall 3 and an inner surface of the surrounding wall 4, the main purpose of which is to assist in demolding the polycrystalline silicon germanium 6. The tantalum nitride coating is not the technical focus of the present invention, and will not be further described herein. However, it should be further noted that, in order to facilitate coating the tantalum nitride coating on the two-dimensional platform area array 31, the above-mentioned respective rhombic concave regions and the respective rhombic convex regions of the first preferred embodiment of the present invention. At each diagonal θ (90 degrees) and at two opposite angles (also 90 degrees) along the first direction X, it is further processed into a curved surface.
參圖9與圖10(並配合參閱圖7),本新型用於長晶的坩堝單元之第二較佳實施例,大致上是相同於該第一較佳實施例,其不同處是在於,本新型該第二較佳實施例的各第一平台區3111的各對角θ的角度是介於115度至125度間。在本新型該第二較佳實施例中,各對角θ的角度是120度,且各矽晶片611表面的矩形與該二維的平台區陣列31的各單元311的矩形是一個長方形;各矽晶片611表面的長方形的第一邊長S1 與第二邊長S2 ,分別是介於157mm至158mm間與介於157 mm至158 mm間,且各矽晶片611表面的第一邊長S1 與第二邊長S2 ,分別是各單元311的第一平台區3111的第一對角線長u1 與第二對角線長u2 的5倍。Referring to FIG. 9 and FIG. 10 (and with reference to FIG. 7), the second preferred embodiment of the present invention for a germanium unit of a long crystal is substantially the same as the first preferred embodiment, the difference being that The angles of the respective diagonal angles θ of the first platform regions 3111 of the second preferred embodiment of the present invention are between 115 degrees and 125 degrees. In the second preferred embodiment of the present invention, the angle of each diagonal θ is 120 degrees, and the rectangle of the surface of each of the 矽 wafers 611 and the rectangle of each unit 311 of the two-dimensional platform area array 31 are rectangular; The first side length S 1 and the second side length S 2 of the rectangle of the surface of the germanium wafer 611 are respectively 157 Mm to 158 Between mm and 157 mm and 158 mm, and the first side length S 1 and the second side length S 2 of the surface of each of the dies 611 are the first diagonal of the first land area 3111 of each unit 311, respectively. The length u 1 is 5 times longer than the second diagonal length u 2 .
於實際使用本新型該等較佳實施例之坩堝單元來成長該多晶矽晶碇6時(以下僅以圖6舉例說明,有關於長晶爐、矽原料、定向取熱塊與矽熔湯等元件,於以下說 明中皆未顯示於圖6),一矽原料是預先放置在各坩堝單元的容置空間40中,並將各坩堝單元放置於一長晶爐內,利用該長晶爐內的一加熱單元來對該矽原料升溫以使該矽原料融解成一矽熔湯。進一步地,透過各坩堝單元下方的一定向取熱塊來使該矽熔湯沿著垂直方向(即,該底壁3的厚度方向Z),構成定向凝固成長。When the polycrystalline silicon germanium 6 is grown by actually using the germanium unit of the preferred embodiment of the present invention (hereinafter, only FIG. 6 is exemplified, there are components such as a crystal growth furnace, a crucible raw material, a directional heat-receiving block, and a crucible melting soup. , said below Not shown in Fig. 6), a raw material is pre-placed in the accommodating space 40 of each 坩埚 unit, and each 坩埚 unit is placed in a crystal growth furnace, and a heating unit in the crystal growth furnace is utilized. The raw material of the crucible is heated to melt the crucible material into a crucible. Further, the crucible melt is formed in the vertical direction (ie, the thickness direction Z of the bottom wall 3) through a certain direction of heat extraction under the respective unit to form a directional solidification growth.
本新型該等較佳實施例一方面利用各底壁3的該等第一平台區3111與該等第二平台區3112的厚度差異,以對成核期的矽晶核提供不同的過冷度(△T),促使矽晶核均勻地分布形成於該底壁3,使得不同晶向(crystallographic direction)的矽晶粒能有不同的成長速率以相互競爭,且緊鄰該底壁3中央的矽晶粒多數是尺寸均勻且較小的矽晶粒(<10 mm)。然而,此處需補充說明的是,晶粒較小的晶體,相對地,其晶體具有較高的晶界密度(grain boundary)。對於晶粒成長而言,高密度的晶界能以其本身的應力場吸引缺陷(defect)集中,誘使差排(dislocation)透過滑移(slip)或爬升(climb)的機制以抵銷掉差排的形成並藉此釋放熱應力(thermal stress)。經前述說明可知,該多晶矽晶碇6於定向凝固的成長過程中,分布在該多晶矽晶碇6底部的該等尺寸均勻且較小的矽晶粒有助於抑制差排的生成,以致於該等尺寸較小且均勻的矽晶粒上方所成長的晶體,可取得尺寸較大(約10 mm)且均勻的矽晶粒。因此,有助於提升太陽能電池的光電轉換效率。The preferred embodiments of the present invention utilize different thickness differences between the first platform regions 3111 of the bottom walls 3 and the second platform regions 3112 to provide different degrees of subcooling for the nucleation nucleation nucleation. (ΔT), causing the twin crystal nucleus to be uniformly distributed on the bottom wall 3, so that the crystallographic grains of different crystallographic directions can have different growth rates to compete with each other, and the crucible is adjacent to the center of the bottom wall 3 The majority of the grains are tantalum grains (<10 mm) of uniform size and small size. However, it should be additionally noted here that crystals having a small crystal grain have a relatively high grain boundary. For grain growth, high-density grain boundaries can attract defect concentration by their own stress field, which induces dislocation to be offset by slip or climb mechanisms. The formation of the difference row and thereby the release of thermal stress. It can be seen from the foregoing description that during the growth of the directional solidification, the uniformly uniform and small ruthenium grains distributed at the bottom of the polycrystalline ruthenium 6 contribute to suppress the generation of the difference row, so that the Crystals grown above the smaller and uniform germanium grains can achieve larger (about 10 mm) and uniform germanium grains. Therefore, it contributes to improving the photoelectric conversion efficiency of the solar cell.
另一方面,本新型該等較佳實施例使其底壁3 上的各第一平台區3111(各為菱形凹區)的第一、二對角線長u1 、u2 的整數倍,分別實質等於各矽晶片611表面的第一、二邊長S1 、S2 ,以使得該多晶矽晶碇6底部對應至各第一平台區3111(各為菱形凹區)處與各第二平台區3112(各為菱形凸區)處,是分別對應形成菱形凸起區與菱形凹陷區。因此,該多晶矽晶碇6於縱向垂直切割時,其切割線可準確地位在該多晶矽晶碇6底部的各菱形凹陷區,相對減少其切割線位在該多晶矽晶碇6底部的各菱形凸起區的機率,使該多晶矽晶碇6避免掉殘留內應力所衍生的晶碇崩裂問題,從而提升該多晶矽晶碇6的有效使用率。In another aspect, the preferred embodiment of the present invention has an integer multiple of the first and second diagonal lengths u 1 , u 2 of each of the first land regions 3111 (each being a diamond shaped recess) on the bottom wall 3, Respectively equal to the first and second sides S 1 , S 2 of the surface of each of the germanium wafers 611, such that the bottom of the polycrystalline germanium 6 corresponds to each of the first land regions 3111 (each being a diamond shaped recess) and each of the second platforms The regions 3112 (each of which are diamond-shaped convex regions) respectively form a diamond-shaped convex region and a diamond-shaped concave region. Therefore, when the polycrystalline twins 6 are vertically cut in the longitudinal direction, the cutting lines thereof can be accurately positioned in the respective rhombic recessed regions at the bottom of the polycrystalline twins 6, and the diamond-shaped bumps at the bottom of the polycrystalline twins 6 are relatively reduced. The probability of the region is such that the polycrystalline germanium 6 avoids the problem of crystal germanium cracking caused by residual internal stress, thereby improving the effective use rate of the polycrystalline germanium.
此處更值得一提的是,本新型該第二較佳實施例使各第一平台區3111的各對角θ為120度,降低矽晶核於成核時的自由能差,也有利於各晶向的矽晶粒於晶體成長過程中取得均一的成長速率,使各晶向的矽晶粒於晶體成長過程中均勻地相互競爭。因此,更進一步地提升該多晶矽晶碇6的矽晶粒尺寸的均勻性。It is further worth mentioning that the second preferred embodiment of the present invention makes each diagonal angle θ of each first platform region 3111 120 degrees, which reduces the free energy difference of the twin crystal nucleation during nucleation, and is also beneficial. The ruthenium grains in each crystal orientation achieve a uniform growth rate during crystal growth, so that the ruthenium grains of each crystal orientation uniformly compete with each other during crystal growth. Therefore, the uniformity of the germanium grain size of the polycrystalline germanium 6 is further improved.
綜上所述,本新型用於長晶的坩堝單元,一方面利用各第一平台區3111與各第二平台區3112間的厚度差異,使該多晶矽晶碇6的矽晶核可均勻地分布於該底壁3,並使得不同晶向的矽晶粒能有不同的成長速率以相互競爭,以致於該多晶矽晶碇6具有晶粒尺寸適中且均勻的矽晶粒,另一方面,本新型各較佳實施例使該多晶矽晶碇6底部對應至各第一、二平台區3111、3112(各為菱形凹區、菱形凸區)處,是分別對應形成菱形凸起區與菱形凹陷區, 該多晶矽晶碇6於縱向垂直切割時,可降低其切割線位在該多晶矽晶碇6底部的各菱形凸起區的機率,使該多晶矽晶碇6避免掉殘留內應力所衍生的晶碇崩裂問題,從而提升該多晶矽晶碇6的有效使用率,故確實能達成本新型之目的。In summary, the present invention is applied to a germanium unit of a long crystal, on the one hand, the thickness difference between each first plateau region 3111 and each second plateau region 3112 is utilized, so that the twin nucleus of the polycrystalline twins 6 can be uniformly distributed. In the bottom wall 3, and the different crystal orientation of the germanium grains can have different growth rates to compete with each other, so that the polycrystalline germanium 6 has a medium and uniform grain size, and on the other hand, the novel In the preferred embodiment, the bottom of the polycrystalline silicon germanium 6 is corresponding to each of the first and second land regions 3111 and 3112 (each of which is a diamond-shaped concave region and a diamond-shaped convex region), which respectively form a diamond-shaped convex region and a diamond-shaped concave region. When the polycrystalline twins 6 are vertically cut in the longitudinal direction, the probability that the cutting line is located at each of the rhombic protrusions at the bottom of the polycrystalline germanium 6 can be reduced, so that the polycrystalline twins 6 can avoid the cracking of the crystal grains caused by the residual internal stress. The problem, thereby increasing the effective use rate of the polycrystalline twins 6, can indeed achieve the object of the present invention.
惟以上所述者,僅為本新型之較佳實施例而已,當不能以此限定本新型實施之範圍,即大凡依本新型申請專利範圍及專利說明書內容所作之簡單的等效變化與修飾,皆仍屬本新型專利涵蓋之範圍內。However, the above is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention, that is, the simple equivalent changes and modifications made in accordance with the scope of the present patent application and the contents of the patent specification, All remain within the scope of this new patent.
31‧‧‧二維的平台區陣列31‧‧‧Two-dimensional platform area array
311‧‧‧單元311‧‧ units
3111‧‧‧第一平台區3111‧‧‧First platform area
3112‧‧‧第二平台區3112‧‧‧Second platform area
32‧‧‧圍繞區32‧‧‧ surrounding area
4‧‧‧圍壁4‧‧‧ wall
X‧‧‧第一方向X‧‧‧ first direction
Y‧‧‧第二方向Y‧‧‧second direction
S1 ‧‧‧第一邊長S 1 ‧‧‧first side length
S2 ‧‧‧第二邊長S 2 ‧‧‧Second side length
S1 ‧‧‧第一邊長S 1 ‧‧‧first side length
S2 ‧‧‧第二邊長S 2 ‧‧‧Second side length
u1 ‧‧‧第一對角線長u 1 ‧‧‧first diagonal length
u2 ‧‧‧第二對角線長u 2 ‧‧‧Second diagonal length
θ‧‧‧對角Θ‧‧‧ diagonal
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CN109133067A (en) * | 2018-10-16 | 2019-01-04 | 青岛蓝光晶科新材料有限公司 | A kind of method and device improving electron-beam smelting polysilicon efficiency |
CN109133067B (en) * | 2018-10-16 | 2023-06-27 | 青岛蓝光晶科新材料有限公司 | Method and device for improving efficiency of electron beam smelting of polycrystalline silicon |
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