M435038 五、新型說明： 【新型所屬之技術領域】 本新型是有關於一種多晶矽種晶裝置。 【先前技術】 太陽能電池是將太陽能轉換成電能的裝置，需具有光 生帶電載子（charge carrier)，而在導體接面上所產生的電荷 分離會傳遞電流，此種轉換過程稱為光伏特效應 (photovoltage effect)。太陽能電池最重要的測量值之一為其 將光能轉成電能的效率，亦即光電轉換率。如何節省成本 並改善太陽能電池之光電轉換率是當前太陽能電池的重要 課題。 用於製造太1%能電池的珍晶片分為早晶砍與多晶碎。 雖然單晶矽晶片的光電轉換率遠大於多晶矽晶片，但因其 成本較高，大多數太陽能電池仍採用多晶矽晶片。然而， 多晶砍中晶體間的晶界(grain boundary)會造成光電轉換率 降低。當晶粒尺寸由100微米提升至數個毫米尺寸時，光 生帶電載子壽命可從約10微秒增加至100微秒。因此若提 升多結晶梦的晶粒尺寸，可使晶界減少’進而增rfj光電轉 換率。 習知太陽能電池之多晶石夕晶片的製造方式大抵如下： 將主成分為二氧化矽（Si〇2)的矽砂與碳混合加熱，將二氧化 矽還原為冶金級矽，冶金級矽雜質偏高，需進一步純化。 將冶金級的矽壓碎和鹽酸反應生成三氯矽烷之氣體，並經 過分餾步驟與其他雜質分離，方可成為電子級矽，即所謂 4 M435038 的多晶石夕材。將多晶石夕材融熔後，固化成石夕晶塊，再將石夕 晶塊切割成矽晶片，於矽晶片上加工即可製作成電池片。 目前多晶石夕長晶爐多為方向性凝固法，係加熱熔化多 晶矽材形成矽湯後，自爐底向上發生方向性凝固形成晶 塊。此法可節省成本並增加產出率，然而，其會使產生的 多晶球晶片具有過多晶粒’亦即有許多的晶界存在，而限 制其光電轉換率。 • 【新型内容】 因此，本新型是在提供一種多晶矽種晶裝置，以此裝 置使多晶矽結構轉為單晶結構，以降低晶粒與晶界數量。 多晶石夕種晶裝置包含一多晶爐、至少一可伸縮夾具，以及 至少一單晶石夕晶種。多晶爐具有一爐口，而可伸縮夾具係 裝設在多晶爐之爐口上方，其包含一驅動裝置及一桿體， 桿體的第一端與驅動裝置連接，而桿體第二端被帶動朝向 多晶爐伸縮作動，桿體之最遠伸出長度令第二端通過爐口 • 而達多晶爐之内部。單晶矽晶種則是可卸除地位於桿體的 第二端。 依據本新型之一實施例，上述多晶矽種晶裝置更包含 一夾持件，其位於桿體的第二端，且夾持件受控夾持或釋 放早晶碎晶種。 依據本新型之一實施例，上述多晶矽種晶裝置包含複 數可伸縮夾具及複數單晶矽晶種，此些可伸縮夾具之各桿 體的位置相對應，且各桿體平均地分散置於多晶爐内。 依據本新型之一實施例，上述多晶矽種晶裝置包含桿 5 M435038 體上叹有若干夾持件’此些夾持件彼此間隔一預設距離， 而複數單晶矽晶種分別被夾持在此些夾持件上。 ，新型另提供一種多晶矽種晶裝置所生成的多晶矽晶 片I疋以上述多晶石夕種晶裝置製造生成，包括一晶片本體、 ^ ^早晶％晶種及至少一順化多晶影響層。晶片本體為 f晶矽材料，而單晶矽晶種位於晶片本體内部。順化多晶 厅、> B層則包覆於單晶石夕晶種外，且係以多晶石夕材料受單晶 石夕晶種之晶向影響而順化凝固生成。 【實施方式】 °月參照第1圖，繪示本新型一實施方式之多晶矽種晶 裝置的示意、®。多晶石夕種晶裝置包含一多晶爐100、至少 可伸縮失具200，以及至少—單晶矽晶種3〇〇。多晶爐 1〇〇具有一爐口 u〇,而可伸縮失具2〇〇係裝設在多晶爐 100之爐口 110上方，其包含一驅動裝置210及一桿體 220梓體220的第一端與驅動裝置21〇連接，而桿體22〇 •第二端被帶動朝向多晶爐刚伸縮作動，桿體22〇之最遠 =出長度令第二端通過爐口 U〇而達多晶爐刚之内部。 早晶石夕晶種300則是可奸除地位於桿體22〇的第二端。 可伸縮失具200採耐熱材料製作，藉由可伸縮夾具2〇〇 $取單晶石夕晶種300 ’於石夕湯融炫完畢而開始固化結晶時 置入:晶石夕晶種3 00，再抽出可伸缩夹具綱，當石夕湯固化 :藉著單晶矽晶種300的晶向生長凝固，藉此控制晶粒方 °減；曰曰粒產出數1。在—例示中，石夕湯高度約2〇〇腿 至32〇麵’可伸縮夹具200之長度為函mm以上。 6 M435038 早晶碎晶種300為早晶材料’需具備固定之晶向》其 純度需達一般單晶規格需求。於矽湯固化時需控制凝固速 率，在一例示中，其速率約為0.5-2公分/小時，矽湯凝固 的位置將從底部開始往上固化。 請參照第2圖，繪示依照本新型一實施方式之多晶矽 晶片的内部結構示意圖，係以本新型多晶矽種晶裝置製造 生成，包括一晶片本體400、至少一單晶矽晶種300及至 少一順化多晶影響層500。晶片本體400為多晶矽材料， • 而單晶矽晶種300位於晶片本體400内部。順化多晶影響 層500則包覆於單晶矽晶種300外，且係以多晶矽材料受 單晶矽晶種300之晶向影響而順化凝固生成。 晶片產出後，會有近似單晶矽的結構生成，將其運用 於製造太陽能電池，其光電轉換率會高於多晶矽晶片，且 光衰現象少於單晶矽晶片。 請參照第3圖，繪示本新型另一實施方式之多晶矽種 晶裝置的示意圖。此多晶矽種晶裝置更包含一夾持件230， • 其位於桿體220的第二端，且夾持件230受控夾持或釋放 單晶矽晶種300，以便於操作。 為使晶粒數量減少的晶片之產出率增加，亦可由不同 位置置入單晶矽晶種300，再搭配不同長晶速率進行同部 長晶，抑或增加單晶矽晶種300的長度，以提高較少晶粒 晶片之可利用率。請參照第4圖，繪示本新型又一實施方 式之多晶矽種晶裝置的示意圖。此多晶矽種晶裝置包含複 數可伸縮夾具200及複數單晶矽晶種300,單晶矽晶種300 可卸除地位於桿體220的第二端，此些可伸縮夾具200之 7 M435038 各桿體220的位置相對應，且各桿體220平均地分散置於 多晶爐100内。 請參照第5圖，繪示本新型再一實施方式之多晶矽種 晶裝置的示意圖。此多晶矽種晶裝置包含桿體220上設有 若干夹持件230，此些夾持件230彼此間隔一預設距離， 而複數單晶矽晶種300分別被夾持在此些夾持件230上。 由上述本新型實施方式可知，利用此種多晶矽種晶裝 置，可應用於由外部置入晶種，使矽湯於凝固時朝著單晶 _ 晶種的晶向生長凝固"有助於減少晶粒與晶界’當應用於 太陽能電池時，能提高其光電轉換率。光電轉換率之提升 不僅可降低單位成本，且使太陽能電池的電力輸出具顯著 效益，使其更具競爭力。 雖然本新型已以實施方式揭露如上，然其並非用以限 定本新型，任何熟習此技藝者，在不脫離本新型之精神和 範圍内，當可作各種之更動與潤飾，因此本新型之保護範 圍當視後附之申請專利範圍所界定者為準。 【圖式簡單說明】 第1圖繪示本新型一實施方式之多晶矽種晶裝置的示 意圖。 第2圖繪示依照本新型一實施方式之多晶矽晶片的内 部結構示意圖。 第3圖繪示本新型另一實施方式之多晶矽種晶裝置的 示意圖。 第4圖繪示本新型又一實施方式之多晶矽種晶裝置的 8 M435038 示意圖。 第5圖繪示本新型再一實施方式之多晶矽種晶裝置的 示意圖。 【主要元件符號說明】 100 ： 多晶爐 110 ： 爐口 200 ： 可伸縮夾具 210 ： 驅動裝置 220 ： 桿體 230 ： 夾持件 # 300 : 早晶碎晶種 400 ： 晶片本體 500 ： 順化多晶影響層M435038 V. New description: [New technical field] The present invention relates to a polycrystalline germanium seeding device. [Prior Art] A solar cell is a device that converts solar energy into electrical energy. It needs to have a photocharge carrier, and the charge separation generated on the conductor interface transmits a current. This conversion process is called a photovoltaic effect. (photovoltage effect). One of the most important measurements of a solar cell is its efficiency in converting light energy into electrical energy, that is, the photoelectric conversion rate. How to save costs and improve the photoelectric conversion rate of solar cells is an important issue in current solar cells. The chips used to make the 1% energy battery are divided into early crystal and polycrystalline. Although the photoelectric conversion rate of single crystal germanium wafers is much larger than that of polycrystalline germanium wafers, most solar cells still use polycrystalline germanium wafers because of their high cost. However, the grain boundary between crystals in polycrystalline chopping causes a decrease in photoelectric conversion rate. When the grain size is increased from 100 microns to several millimeters, the photogenerated carrier lifetime can be increased from about 10 microseconds to 100 microseconds. Therefore, if the grain size of the polycrystalline dream is increased, the grain boundary can be reduced and the rfj photoelectric conversion ratio can be increased. The manufacturing method of the polycrystalline stone wafer of the conventional solar cell is as follows: The cerium oxide whose main component is cerium oxide (Si〇2) is mixed with carbon to heat the cerium oxide to a metallurgical grade cerium, metallurgical grade cerium impurity It is too high and needs further purification. The metallurgical grade crucible is crushed and reacted with hydrochloric acid to form a gas of trichloromethane, which is separated from other impurities by a fractionation step to become an electronic grade crucible, so-called 4 M435038 polycrystalline stone. After the polycrystalline stone is melted, it is solidified into a stone block, and then the stone block is cut into a tantalum wafer, and processed on a tantalum wafer to form a cell sheet. At present, the polycrystalline stone crystal growth furnace is mostly a directional solidification method. After heating and melting the polycrystalline coffin to form a soup, directional solidification occurs from the bottom of the furnace to form a crystal block. This method saves cost and increases the yield. However, it causes the resulting polycrystalline ball wafer to have too many grains', i.e., there are many grain boundaries present, and its photoelectric conversion rate is limited. • [New content] Therefore, the present invention is to provide a polycrystalline germanium seeding device which converts a polycrystalline germanium structure into a single crystal structure to reduce the number of crystal grains and grain boundaries. The polycrystalline quartz seeding apparatus comprises a polycrystalline furnace, at least one telescopic fixture, and at least one single crystal. The polycrystalline furnace has a furnace mouth, and the telescopic clamp is installed above the furnace mouth of the polycrystalline furnace, and comprises a driving device and a rod body, the first end of the rod body is connected with the driving device, and the rod body is second The end is driven to move toward the polycrystalline furnace, and the farthest extension of the rod causes the second end to pass through the mouth of the furnace and reach the inside of the polycrystalline furnace. The single crystal twin is removably located at the second end of the rod. According to an embodiment of the present invention, the polycrystalline germanium seeding apparatus further includes a holding member located at the second end of the rod body, and the holding member is controlled to clamp or release the early crystal seed crystal. According to an embodiment of the present invention, the polycrystalline germanium seeding device comprises a plurality of telescopic fixtures and a plurality of single crystal twin crystals, wherein the positions of the rods of the telescopic fixtures are corresponding, and the rods are evenly dispersed. Inside the crystal furnace. According to an embodiment of the present invention, the polycrystalline germanium seeding device comprises a rod 5 M435038, and a plurality of clamping members are slid on the body. The clamping members are spaced apart from each other by a predetermined distance, and the plurality of single crystal twin crystal seeds are respectively clamped at These clamps are on. The novel polycrystalline germanium wafer I produced by the polycrystalline germanium seeding device is produced by the above polycrystalline crystal seeding device, and comprises a wafer body, a ^ crystal early crystal seed crystal and at least one humified polycrystalline influential layer. The wafer body is an f-crystal material, and the single crystal seed crystal is located inside the wafer body. The Hue Polycrystalline Hall and the > B layer are coated on the outside of the single crystal, and the polycrystalline stone material is formed by the crystallization of the crystal of the single crystal. [Embodiment] Referring to Fig. 1, a schematic diagram of a polycrystalline germanium seeding apparatus according to an embodiment of the present invention is shown. The polycrystalline crystallization apparatus comprises a polycrystalline furnace 100, at least a telescopic loss 200, and at least - a single crystal twin 3 〇〇. The polycrystalline furnace 1 has a furnace port, and the telescopic gear 2 is mounted above the furnace port 110 of the polycrystalline furnace 100, and comprises a driving device 210 and a rod 220 body 220. The first end is connected to the driving device 21〇, and the second end of the rod body 22 is driven to move toward the polycrystalline furnace. The farthest pole of the rod body 22 is the length of the rod body. The inside of the polycrystalline furnace. The early crystal sapphire seed crystal 300 is the second end of the rod body 22 可. The retractable dislocation tool is made of heat-resistant material, and is made by retractable jig 2〇〇 取 单晶 取 取 300 300 300 ' 于 石 石 石 石 石 石 石 石 石 石 石 石 石 石 石 石 石 石 石 石 石 石 置 置 置 置 置Then, the telescopic fixture is extracted, and when the Shi Xi Tang is solidified: it grows and solidifies by the crystal orientation of the single crystal twin crystal 300, thereby controlling the grain square reduction; the grain yield is 1. In the example, the length of the Shi Xi Tang is about 2 feet to 32 inches. The length of the telescopic jig 200 is more than or equal to mm. 6 M435038 Early crystal crushed seed crystal 300 is an early crystal material 'requires a fixed crystal orientation', and its purity needs to meet the requirements of general single crystal specifications. The solidification rate is controlled when the soup is cured. In an example, the rate is about 0.5-2 cm/hr, and the position where the soup is solidified will solidify from the bottom. 2 is a schematic diagram showing the internal structure of a polysilicon wafer according to an embodiment of the present invention, which is produced by the novel polycrystalline germanium seeding apparatus, and includes a wafer body 400, at least one single crystal germanium crystal 300, and at least one. The cis polycrystalline influence layer 500. The wafer body 400 is a polycrystalline germanium material, and the single crystal germanium seed crystal 300 is located inside the wafer body 400. The cis polycrystalline influential layer 500 is coated on the outside of the single crystal twin seed crystal 300, and is formed by the cis-solidification of the polycrystalline germanium material by the crystal orientation of the single crystal twin seed crystal 300. After the wafer is produced, there will be a structure of approximately single crystal germanium, which is applied to the manufacture of solar cells, and the photoelectric conversion rate thereof is higher than that of the polycrystalline germanium wafer, and the light decay phenomenon is less than that of the single crystal germanium wafer. Referring to FIG. 3, a schematic view of a polycrystalline germanium seeding apparatus according to another embodiment of the present invention is shown. The polycrystalline germanium seeding device further includes a holder 230, which is located at the second end of the rod 220, and the holder 230 is controlled to hold or release the single crystal twin 300 for ease of operation. In order to increase the yield of the wafer with a reduced number of crystal grains, the single crystal germanium seed crystal 300 may be placed at different positions, and the same crystal growth rate may be used for the same crystal growth rate, or the length of the single crystal twin crystal crystal 300 may be increased. Increase the availability of fewer die wafers. Referring to Figure 4, there is shown a schematic view of a polycrystalline germanium seeding apparatus according to still another embodiment of the present invention. The polycrystalline germanium seeding device comprises a plurality of telescopic fixtures 200 and a plurality of single crystal twins 300. The single crystal twins 300 are removably located at the second end of the rod 220, and the telescopic clamps 200 of the 7 M435038 rods The positions of the bodies 220 correspond, and each of the rods 220 is evenly dispersed in the polycrystalline furnace 100. Referring to Fig. 5, a schematic view of a polycrystalline germanium seeding apparatus according to still another embodiment of the present invention is shown. The polycrystalline germanium seeding device comprises a plurality of clamping members 230 disposed on the rod body 220. The clamping members 230 are spaced apart from each other by a predetermined distance, and the plurality of single crystal twins 300 are respectively clamped on the clamping members 230. on. According to the above-described embodiment of the present invention, the polycrystalline germanium seeding device can be applied to the seed crystal from the outside, so that the soup can be solidified toward the crystal growth of the single crystal seed crystal during solidification. The grain and grain boundary 'when applied to a solar cell, it can increase its photoelectric conversion rate. The increase in photoelectric conversion rate not only reduces the unit cost, but also makes the solar cell's power output more significant and more competitive. Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention. Any one skilled in the art can make various changes and retouchings without departing from the spirit and scope of the present invention. The scope is subject to the definition of the scope of the patent application attached. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic view showing a polycrystalline germanium seeding apparatus according to an embodiment of the present invention. 2 is a schematic view showing the internal structure of a polysilicon wafer according to an embodiment of the present invention. Fig. 3 is a schematic view showing a polycrystalline germanium seeding apparatus according to another embodiment of the present invention. 4 is a schematic view of 8 M435038 of the polycrystalline germanium seeding device of still another embodiment of the present invention. Fig. 5 is a schematic view showing a polycrystalline germanium seeding apparatus according to still another embodiment of the present invention. [Main component symbol description] 100 : Polycrystalline furnace 110 : Furnace port 200 : Retractable jig 210 : Drive device 220 : Rod 230 : Clamping member # 300 : Early crystal seed crystal 400 : Wafer body 500 : Hue Crystal effect layer