M430017 五、新型說明： 【新型所屬之技術領域】 本創作有關一種RFID標籤天線，尤指一種特適使用於金屬表面及 較高頻的被動式射頻識別標籤天線。 【先前技術】 按，近代的無線射頻識別（Radi〇 Frequency Identification ’ RFID)廣泛應用於各種不同的商業領域，以應用在物流管控為例，使 用RFID收發器能進行各種可行動貨物或產品的紀錄及追蹤。同時，進 行此類快速識別對於物流、倉庫管理、運輸管理及其他相關的商業活 動均屬相當重要》 RFID基本上可分為130kHz左右的低頻系統，13. 56MHz左右的高 頻⑽）系統’以及頻段在900MHz左右的超高頻（UHF)系統。業者 所選用的頻率範圍可因讀取速度、讀取標籤數量等因素加以決定，但 原則上’所使用頻率越低則其讀取及處理速度較慢，距離亦較短；反 之’所使用頻率愈高則其讀取及處理速度愈快，距離亦較長。 在現有此類RFID應用上，大都將Rfid收發器貼到織品、包裝盒 或一般容器上’但對於能以較低成本及簡易結構使用在金屬表面，尤 其是以高頻及超高頻運作的物品上，則不多見。 【新型内容】 本創作之主要目的即在提供一種RFID標籤天線，尤指特適使用於 3 M430017 金屬表面及較高頻運作的RFID標籤天線。 為達上揭目的，本創作包含一薄片天線，以及一基板層；一中介 層則設於上述薄片天線及基板層之間；所述基板層表面預設一娜 曰曰片’上述料天線以不同饋场置形成不雜抗並_聯_電感元件 以搭配所述獅⑻操作鮮達成天線與^間的共恤配而可將 上述標籤天線組合於金屬表面。 於可行實施财，上述基板層表面設有一接點區，薄片天線則穿 過上述中介層以—相對接鱗接於所述的基板層表面接舰；所述基 板層以另一預設接點連接於一金屬表面。 於可行實施例令，上述中介層為介質材料所製成或可設為空氣層。 於較佳實施例中，所述電感元件可為金屬微帶線。 於可行實施例中’上述基板層為介質材料所製成或可為電路板。 【實施方式】 現凊參第1-3 ®，於圖示較佳實施例中，本創作設有—薄片天線 10 ’以及配合所述薄片天線10大小尺寸的基板層2〇 ; 一中介層3〇則 設於上述薄片天線H)及基板㈣之心如上述天線結_而可組裝於 一金屬90表面。 上述基板層2〇表面可預設—娜晶片21，供與上述薄片天線ι〇 進行串接随。則^行關巾，該驗層W可賤任何適合的 介質材料所製成，或可為印刷電路板（pCB)。 4 於可行實施例中，上述薄片天線10 (Patch Antenna)能因不同饋 入位置形成不同阻抗’以所搭配的RFID晶片21操作頻率為9〇2MHz到 928MHz為例’其輸入阻抗大致為27-j200 ’此天線因而設計成27+j2〇〇 的輸入阻抗，以達成天線與晶片間的共軛匹配。於圖示較佳實施例中， 即可將天線10饋入點位置放在實部為27歐姆左右的地方。 在圖示實施例中，上述基板層20表面設有一接點區22，薄片天線 1〇則穿過上述中介層30以一相對接點U導接於所述的基板層2〇表面 接點區22，但此一實施例僅用為方便舉例說明，並非加以限制。同時， 上述中介層30能以任何適合的介質材料所製成，或可為空氣層。 於上述基板層20表面接點區22與RFID晶片21之間則串聯一電感 元件23,該電感元件23經由另一接點區連接咫11}晶片21，同時，以 如上述的匹配方式’亦即，當使用於如9〇施觀Hz的超高頻_ 晶片21時，、將天線10饋入點位置放在實部為27歐姆左右的地方，配 合所述的電感7L件23來達成薄片天線10與膽晶片21間的共輕匹配。 於較佳實關巾’上述域元件23可躲何電齡或如圖示的金 屬微帶線。 於圖示實關巾，上述基板層2G以另—職獅24連接於金屬 9〇表面，但此亦縣枝_制，並雜雛他可行崎接方式。 現請參第4圖’此嶋示t此―標籤天_人點實部在不同位置及 不同頻率時，其相對點的虛部阻抗。第5關齡第働悅所得的輸 入阻抗Zs代入以下公式所取得的反射係數su。 該公式為: 20 log|r| = 20 log-L~zs_ 其中Zl為標籤晶片之輸入阻抗，zs為標籤天線之輸入阻抗。 以第4圖為例，在902MHz饋入點實部為置放在22. 43歐姆（即下 曲線0的位置），所測得的輸入阻抗（即上曲線〇的位置）為 22· 43+j212. 03 ;在910MHz饋入點實部為置放在39.45歐姆（即下曲線 1的位置）’所測得的輸入阻抗（即上曲線1的位置）為39 45+j2〇9. 27， 以此類推而可取得如第5圖所示的各種不同輸入阻抗（Zs>然後可將 此一標籤天線輸入阻抗Zs配合標籤晶片輸入阻抗代入公式，即可取得 個別的反射係數（S11) ’其中，反射係數越小傳輸功率越大，由此亦可 看出本創作可達到優異的傳輸效果。 本創作因而能以低成本簡易結構形成一種適於金屬表面的標 籤天線’在較高頻率運作下含有高功率傳輸效果，新穎首創而具有產業 上利用價值。 以上實施例僅用為方便舉例說明，並非加以限制，熟習此一技藝人 士所做的各種變形與修飾，均仍應含括於以下申請專利範圍中。 【圖式簡單說明】 第1圖係本創作一較佳實施例立體圖， 第2圖係第1圖元件分解圖， 第3圖係本創作基板層表面局部放大圖， 第4圆係本創作在不同頻率下輸入不同饋入點以取得輸入阻抗的測試 M430017 圖， 第5圖顯示第4圖輸入阻抗代入公式所取得的不同反射係數。 【主要‘元件符號說明】 天線10 接點11 基板層20 RFID晶片21 接點區22 電感元件23 接點24 , 中介層30 金屬90 7M430017 V. New Description: [New Technology Field] This creation relates to an RFID tag antenna, especially a passive RFID tag antenna that is suitable for use on metal surfaces and higher frequencies. [Prior Art] According to the recent Radio Frequency Identification (RFID), it is widely used in various commercial fields. For example, in the case of logistics management, RFID transceivers can be used to record various movable goods or products. And tracking. At the same time, such rapid identification is very important for logistics, warehouse management, transportation management and other related business activities. RFID can basically be divided into low frequency systems of around 130 kHz, high frequency (10) systems around 13.56 MHz and Ultra high frequency (UHF) system with a frequency band around 900MHz. The frequency range selected by the operator can be determined by factors such as the reading speed and the number of reading tags, but in principle, the lower the frequency used, the slower the reading and processing speed and the shorter the distance; otherwise, the frequency used. The higher the reading, the faster the reading and processing, and the longer the distance. In most of these existing RFID applications, Rfid transceivers are mostly attached to fabrics, boxes or general containers, but they can be used on metal surfaces, especially at high frequencies and ultra-high frequencies, at a lower cost and in a simple structure. On the items, it is rare. [New content] The main purpose of this creation is to provide an RFID tag antenna, especially for RFID tag antennas that are particularly suitable for use on 3 M430017 metal surfaces and higher frequency operation. In order to achieve the above, the present invention comprises a thin-film antenna and a substrate layer; an interposer is disposed between the above-mentioned thin-film antenna and the substrate layer; and the surface of the substrate layer is preset with a substrate of the above-mentioned material Different feed fields are formed to form a non-heavy anti-inductance element, and the above-mentioned tag antenna can be combined on a metal surface to cooperate with the lion (8) to achieve a common fit between the antenna and the antenna. In the feasible implementation, a surface of the substrate layer is provided with a contact area, and the thin-film antenna passes through the interposer to connect the ship to the surface of the substrate layer; the substrate layer has another preset contact Connected to a metal surface. In a possible embodiment, the interposer is made of a dielectric material or may be an air layer. In a preferred embodiment, the inductive component can be a metal microstrip line. In a possible embodiment, the substrate layer is made of a dielectric material or may be a circuit board. [Embodiment] Now, in the preferred embodiment, the present invention is provided with a sheet antenna 10' and a substrate layer 2 sized to match the size of the sheet antenna 10; an interposer 3 The core of the above-mentioned sheet antenna H) and the substrate (4) can be assembled on the surface of a metal 90 as described above. The surface of the substrate layer 2 may be preset to be a wafer 21 for serial connection with the above-mentioned sheet antenna ι. Then, the layer W can be made of any suitable dielectric material or can be a printed circuit board (pCB). 4 In a feasible embodiment, the patch antenna 10 can form different impedances due to different feeding positions. The operating frequency of the RFID chip 21 is 9 〇 2 MHz to 928 MHz. The input impedance is approximately 27- J200 'This antenna is thus designed to have an input impedance of 27+j2〇〇 to achieve conjugate matching between the antenna and the wafer. In the preferred embodiment illustrated, the antenna 10 feed point can be placed at a location of about 27 ohms in the real part. In the illustrated embodiment, a surface of the substrate layer 20 is provided with a contact region 22, and the thin-film antenna 1 is guided through the interposer 30 to a surface contact region of the substrate layer 2 at an opposite contact U. 22. However, this embodiment is only for convenience of illustration and is not limited. At the same time, the interposer 30 described above can be made of any suitable dielectric material or can be an air layer. An inductive component 23 is connected in series between the surface contact region 22 of the substrate layer 20 and the RFID chip 21, and the inductive component 23 is connected to the wafer 11 via another contact region, and at the same time, in the matching manner as described above. That is, when used in an ultra-high frequency _ wafer 21 such as Hz, the antenna 10 is fed to a point where the real part is about 27 ohms, and the inductor 7L is used to form a thin sheet. A total light match between the antenna 10 and the bile wafer 21. Preferably, the domain element 23 can be removed from the electrical age or metal microstrip line as shown. In the case of the actual closing towel, the above-mentioned substrate layer 2G is connected to the surface of the metal 9〇 by another lion 24, but this is also a county branch, and it is possible to mix and match. Please refer to Figure 4 here. This shows the imaginary impedance of the relative point of the real point of the human point at different positions and different frequencies. The input impedance Zs obtained by the fifth-year-old Dijon is substituted into the reflection coefficient su obtained by the following formula. The formula is: 20 log|r| = 20 log-L~zs_ where Zl is the input impedance of the tag chip and zs is the input impedance of the tag antenna. Taking Figure 4 as an example, the actual input point at 902MHz is placed at 22.43 ohms (ie, the position of the lower curve 0), and the measured input impedance (ie, the position of the upper curve )) is 22·43+ J212. 03 ; The input impedance measured at the 910MHz feed point is placed at 39.45 ohms (ie, the position of the lower curve 1). The measured input impedance (ie, the position of the upper curve 1) is 39 45+j2〇9. 27, By analogy, various input impedances as shown in Fig. 5 can be obtained (Zs>; then one tag antenna input impedance Zs can be substituted into the formula of the tag chip input impedance, and an individual reflection coefficient (S11) can be obtained. The smaller the reflection coefficient, the larger the transmission power, and it can be seen that the creation can achieve excellent transmission effect. The present invention can thus form a tag antenna suitable for metal surfaces at a low cost and simple structure. The invention has the advantages of high power transmission effect, novelity and industrial value. The above embodiments are only for convenience of illustration and are not limited, and various modifications and modifications made by those skilled in the art should still be included in the following application. Special BRIEF DESCRIPTION OF THE DRAWINGS [FIG. 1] FIG. 1 is a perspective view of a preferred embodiment of the present invention, FIG. 2 is an exploded view of the first embodiment, and FIG. 3 is a partially enlarged view of the surface of the substrate layer, and a fourth circular system. This test is to test the input impedance of different input points to obtain the input impedance of the M430017 diagram, and the fifth figure shows the different reflection coefficients obtained by the input impedance substitution formula of Fig. 4. [Main 'component symbol description】 Antenna 10 contact 11 Substrate layer 20 RFID wafer 21 Contact region 22 Inductive component 23 Contact 24, Interposer 30 Metal 90 7