M426869 五、新型説明： 【新型所屬之技術領域】 本創作是有關於一種半導體製程裝置，且特別是有關 於一種晶圓尋邊定位裝置及触刻機台。 【先前技術】 一般而晶圓是以單晶石夕作為基材，而在晶圓的工 作面（正面）上通常會以化學氣相沈積法形成磊晶層。然 而，在進行磊晶製程的過程中，為了防止晶圓背面的雜質 擴散到工作面而改變其電性，因此會在晶圓背面形成氧化 層，以作為保護層使用，進而可抑制晶圓背面的雜質擴散。 在晶圓背面形成氧化層的製程中，不可避免地會同時 在晶圓邊緣、甚至在晶圓正面形成氧化層。然而，在對晶 圓進行磊晶製程時，是在晶圓的正面進行磊晶的成長，且 位在晶圓邊緣的氧化層會使得磊晶產生冠狀突起，而使得 磊晶的成膜品質不佳。因此，在對此晶圓進行磊晶製程之 前，會移除晶圓邊緣及晶圓正面的氧化層，僅留下晶圓 面的氧化層。 然而，由於晶圓放置在取片座上的位置會產生偏移， 所以在將晶圓移_反應載台上讀，會產生晶圓定位不 精準的問題。目此，在侧晶®邊緣氧化層時，會使得經 敍刻後之魏層的規格荷合狀，而降低最終產品的可 靠度。 【新型内容】 本創作的目的就是在提供一種晶圓尋邊定位裝置，其 3 M426869 可精準地對晶圓進行尋邊及定位。 本創作的目的就是在提供一祕刻機台 蝕刻後的膜層規格符合規定。 』使侍鉍 本創作提出一種晶圓尋邊定位裝置，用以對具有平口 的晶圓進行尋邊粒，包括旋轉台、夹具、& 器。旋轉台在其承載平面上具有第—中心點 於旋轉台上時，夾具用以夾住晶圓，以使得晶圓 〜點對準第—巾心、點。光源發射出枝，光束與承載平面 具有接觸點，其中第-中^點與接觸點之間的距離等於第 -中心點與平Π之間的最短距離。光偵測器用以偵測光束。 依照本創作的-實施例所述，在上述之晶圓尋邊定位 裝置中’光源與光偵測器例如是設置於承載平面的同一側。 依照本創作的一實施例所述，在上述之晶圓尋邊定位 裝置中’光源與光偵測器例如是設置於承載平面的不同側。 依照本創作的一實施例所述，在上述之晶圓尋邊定位 裝置中，光源例如是雷射光源。 依照本創作的一實施例所述，在上述之晶圓尋邊定位 裴置中，光偵測器例如是雷射偵測器。 本創作提出一種蝕刻機台’包括晶圓尋邊定位襞置、 及氣罩。晶圓尋邊定位裝置用以對具有平口的晶圓進 :尋邊定位，包括旋轉台、夾具、光源及光偵測器。旋轉 台在其承载平面上具有第一中心點。當晶圓放置於旋轉台 亡時，夾具用以夾住晶圓，以使得晶圓的第二中心點對準 第一中心點。光源發射出光束，先束與承載平面具有接觸 =，其中第-中心點與接觸點之間的距離等於第二中心點 1 口之間的最短距離H職用以制光h載板用 以接收並承載來自晶®尋邊定位裝置的晶圓。氣罩設置於 載板上T，當氣罩纽載板時’於氣罩内供應反應氣體 止、本創料—實闕所述，在上狀侧機台中， 光源與光偵測器例如是設置於承載平面的同一侧。 依照本創作的—實施例所述，在上述之侧機台中， 光源與光偵測器例如是設置於承載平面的不同側。 ，、、、本創作的—實施例所述，在上述之侧機台中’ 光源例如是雷射光源。 本創作的—實施例所述，在上述之制機台中， 先偵測盗例如是雷射偵測器。 审=照本創作的—實施例所述，在上述之則機台中， 更已括加熱器，連接於載板。 =、本創作的—實施例所述，在上述之酬機台中， 座及放取片剌以承餅尋邊定位及待 =的阳圓。放片座用以承載紐刻處理後的晶圓。 …ii創作的一實施例所述，在上述之蝕刻機台中， S盘=手臂組’用以在取片座、晶圓尋邊定位裝置、 載板/、放片座之間運送晶圓。 葡板的j創作的"'貫施例所述，在上述之細機台中’ 載板的材料例如是喊或石墨。 翁創作的實施例所述，在上述之侧機台中， ;、；例如是耐熱材料或耐腐蝕氣體材料。 M426869 ^依照本創作的—實施例所述，在上述之蝕刻機台中， 氣罩的材料例如是可熔性聚四氟乙烯（p〇lyflu〇r〇alk〇xy， PFA)。 依照本創作的—實施例所述，在上述之姓刻機台中， 反應氣體例如是氫氟酸。 依照本創作的一實施例所述，在上述之蝕刻機台中， 晶圓例如是矽晶圓。 依照本創作的一實施例所述，在上述之蝕刻機台中， 蝕刻機台例如是用以移除晶圓上的邊緣氧化層。 依照本創作的一實施例所述，在上述之钱刻機台中， 晶圓的形狀例如是圓形、方形或類方形。 基於上述，在本創作的晶圓尋邊定位裝置中，藉由夹 具夾住晶圓的方式可精確地且快速地對晶圓進行中心定 位’以避免晶圓在載板上的位置產生偏移。 此外，由於將第一中心點與接觸點之間的距離設計成 4於第一中心點與平口之間的最短距離，所以藉由旋轉台 轉動晶圓以及利用光偵測器對光束進行偵測能夠尋找出晶 圓之平口的位置，因此可精準地對晶圓進行尋邊操作。 另外’由於本創作所提出的種蝕刻機台中具有上述晶 圓尋邊定位裝置，因此可使得經蝕刻後的膜層規格符合 定。 α 為讓本創作之上述和其他目的、特徵和優點能更明顯 易懂，下文特舉實施例，並配合所附圖式，作詳細說明如 下。 。 6 M426869 【實施方式】 本創作所提出之晶圓尋邊定錄置可應詩 對晶圓進行尋邊定位的機台。在以下的實施例中是二曰 圓尋邊定位裝置翻於侧機台巾進行說明，但你: 不限於此。 ^作並 圖1所繪示為本創作之第一實施例之蝕刻機台的 圖。圖2A至圖2B所繪示為利用圖i之晶圓尋邊定位二 對晶圓進行尋邊定位的示意圖。 、 凊參照圖1，蝕刻機台1〇〇包括晶圓尋邊定位 2〇〇 '載板300及氣罩400。蝕刻機台1〇〇例如 ^ 機台。钮刻機台刚可用以移除晶圓上的膜層，例 以移除晶圓500上的邊緣氧化層，但本創作並不以此=艮。 請同時參照圖i、圖2A及圖2B，晶圓尋邊定仇'裝^ 2〇〇用以對具有平口 502的晶圓5〇〇進行尋邊定位。晶圓 500例如是矽晶圓。晶圓尋邊定位裝置2〇〇包括旋轉台 202、夾具204、光源2〇6及光偵測器2〇8。在此實施例中^ 具有平口 502的晶圓5〇〇是以圓形為例進行說明，但本創 作並不以此為限。在其他實施例中，具有平口 502的晶圓 5〇〇亦可為方形或類方形。亦即，只要是晶圓500具有平 口 502 ’均屬於本創作所保護的範圍。 、旋轉台202在其承載平面210上具有第一中心點ρι， —、承栽並旋轉晶圓500。在此實施例中，將承載平面21 〇 為包括灰轉台202上用以承載晶圓5〇〇的承載面及其 所延伸的平面。 7 M426869 當晶圓500放置於旋轉台202上時，夾具204用以夹 住晶圓500 ’以使得晶圓500的第二中心點p2對準第—中 心點P卜如此一來，藉由夾具204夾住晶圓5〇〇的方式可 精確地且快速地對晶圓500的第二中心點P2的位置進行 中心定位，以使得晶圓500從晶圓尋邊定位裝置2〇〇運送 到載板300的距離被調整為預設的標準距離，進而能避免 晶圓500放置在載板3〇〇上的位置產生偏移。 光源206發射出光束L，光束L與承載平面21〇具有 接觸點Pc，其中第一 f心點pi與接觸點Pc之間的距離 D1等於第二中心點P2與平口 5〇2之間的最短距離d2。光 源206例如是雷射光源。 光4貞測器208用以偵測光束L。光偵測器208例如是 雷射偵測器。光源206與光偵測器208例如是以一體成型 的方式設置於承載平面210的同一側，如設置在承載平面 210上方的取片臂902上，但本創作並不限於此。在另一 實施例中，光源206與光偵測器208亦可設置在承載平面 210下方的底座(未繪示）上。在其他實施例中，光源206 與光偵測器208可設置於其他位置上，且光源206與光摘 測器208亦可為互相分離的構件。 在此實施例中’利用晶圓尋邊定位裝置2〇〇對晶圓5〇〇 進行尋邊操作的方法說明如下。首先，將承載平面21〇的 弟一中心點P1與光束L的接觸點Pc之間的距離D1課計 成4於晶圓500的第二中心點P2與平口 502之間的最短 距離D2。接著，請參照圖2A，當晶圓5〇〇的平口 5〇2位 M426869 置並非位在預定位置時，光源206所發射出的光束L會被 晶圓500所反射，且光偵測器208會偵測到被晶圓500所 反射的光束L。然候，請參照圖2B，藉由旋轉台202轉動 晶圓500的位置，直到第一中心點pi與接觸點Pc之間的 距離D1等於第二中心點P2與平口 502之間的最短距離 D2時，光束L不再被晶圓500反射且會穿過晶圓5〇〇的 平口 502側邊，因此光偵測器208將不再偵測到被晶圓500 所反射的光束L ’此時可確定晶圓5〇〇的平口 502已被調 整至預定位置，而完成晶圓500的尋邊操作。 載板300用以接收並承載來自晶圓尋邊定位裝置200 的晶圓500。載板300的材料例如是陶瓷或石墨。 氣罩400設置於載板3〇〇上方，當氣罩400蓋住載板 300時，於氣罩400内供應反應氣體，用以對晶圓500進 行姓刻。氣罩400的材料例如是耐熱材料或耐腐蝕氣體材 料，如可熔性聚四氟乙烯（PFA)。於氣罩400内所供應的 反應氣體例如是氮氟酸。 此外’蝕刻機台100更可選擇性地包括傳送手臂4〇2、 加熱器600、取片座700、放片座800及機械手臂組9〇〇 中的至少一者。 傳送手臂402連接於氣罩400，用以調整氣罩400的 位置。在對晶圓500進行钮刻時，可藉由傳送手臂4〇2移 動氣罩400，而使得氣罩400蓋住載板300，以在氣罩400 中形成氣密的反應室。 加熱器600連接於載板300，可透過載板300對晶圓 9 M426869 500進行加熱。取片座700用以承載待尋邊定位及待蝕刻 處理的晶圓500，而放片座8〇〇用以承載經蝕刻處理後的 晶圓500。 機械手臂組900可包括取片臂9〇2與放片臂904，用 以在取片座700、晶圓尋邊定位裝置2〇〇、載板3〇〇與放片 座800之間運送晶圓5〇〇。其中，取片臂902用以在取片 座700、晶圓尋邊定位裝置200與載板300之間運送晶圓 500’而放片臂904用以在載板3〇〇與放片座8〇〇之間運送 晶圓500。 基於上述實施例可知，藉由夾具2〇4夾住晶圓5〇〇的 方式可精確地且快速地對晶圓5〇〇進行中心定位，以避免 晶圓500在載板300上的位置產生偏移。 此外，由於將第一中心點P1與接觸點Pc之間的距離 设计成等於第二中心點P2與平口 502之間的最短距離， 所以藉由旋轉台202轉動晶圓5〇〇以及利用光偵測器2〇8 對光束L進行债測能夠寻找出晶圓5〇〇之平口 502的位 置，因此可精準地對晶圓進行尋邊操作。 另外，由於上述實施例所提出的蝕刻機台1〇()中具有 晶圓尋邊定位裝置200,因此可精準地對晶圓進行尋邊及 定位，進而使得經蝕刻後的膜層規格符合規定。 圖3A至圖3B所繪示為利用本創作之第二實施例之晶 圓尋邊定位裝置對晶圓進行尋邊定位的示意圖。 凊同時參照圖1、圖2A、圖2B、圖3A及圖3B，第 二實施例與第-實施_差異在於：在第—實施例的晶圓 财26869 尋邊定位裝置200中’光源206與光偵測器208例如是以 一體成型的方式設置於承載平面21〇的同一側。然而，在 第二實施例的晶圓尋邊定位裝置2〇〇a中，光源2〇6a與光M426869 V. New Description: [New Technology Field] This creation is about a semiconductor process device, and in particular, it relates to a wafer edge-finding device and a touch-cutting machine. [Prior Art] Generally, a wafer is a single crystal slab as a substrate, and an epitaxial layer is usually formed by chemical vapor deposition on a working surface (front surface) of the wafer. However, in the process of performing the epitaxial process, in order to prevent the impurities on the back surface of the wafer from being diffused to the working surface and changing its electrical properties, an oxide layer is formed on the back surface of the wafer to be used as a protective layer, thereby suppressing the back side of the wafer. The impurities diffuse. In the process of forming an oxide layer on the back side of the wafer, it is inevitable to form an oxide layer on the edge of the wafer or even on the front side of the wafer. However, in the epitaxial process of the wafer, the epitaxial growth is performed on the front side of the wafer, and the oxide layer located at the edge of the wafer causes the epitaxial grains to produce crown protrusions, so that the film formation quality of the epitaxial film is not good. Therefore, before the wafer is epitaxially processed, the oxide edge of the wafer edge and the front side of the wafer is removed, leaving only the oxide layer on the wafer surface. However, since the position at which the wafer is placed on the take-up holder is offset, reading on the wafer shifting reaction stage causes a problem of inaccurate wafer positioning. Therefore, in the case of the side crystal® edge oxide layer, the size of the warp layer after the engraving can be made to reduce the reliability of the final product. [New content] The purpose of this creation is to provide a wafer edge-finding device with 3 M426869 for precise edge finding and positioning of wafers. The purpose of this creation is to provide a film engraving machine after etching the film specifications meet the requirements. 』Attendance This creation proposes a wafer edge-finding device for edge-finding wafers with flat ports, including rotary tables, fixtures, and & When the rotating table has a first-center point on the rotating table, the clamp is used to clamp the wafer so that the wafer-point is aligned with the center-to-center. The light source emits a branch, and the beam has a contact point with the bearing plane, wherein the distance between the first-middle point and the contact point is equal to the shortest distance between the first-center point and the flat point. A light detector is used to detect the light beam. According to the present invention, in the wafer edge locating device described above, the light source and the photodetector are disposed, for example, on the same side of the carrying plane. According to an embodiment of the present invention, in the wafer edge locating device described above, the light source and the photodetector are disposed, for example, on different sides of the carrying plane. According to an embodiment of the present invention, in the above wafer edge locating device, the light source is, for example, a laser light source. According to an embodiment of the present invention, in the above wafer edge locating device, the photodetector is, for example, a laser detector. The present application proposes an etching machine' including a wafer edge positioning device and an air hood. The wafer edge locating device is used for locating a wafer having a flat opening, including a rotating table, a fixture, a light source, and a photodetector. The rotary table has a first center point on its load bearing plane. When the wafer is placed on a rotating table, the fixture is used to clamp the wafer such that the second center point of the wafer is aligned with the first center point. The light source emits a beam, and the first beam has contact with the bearing plane=, wherein the distance between the first center point and the contact point is equal to the shortest distance between the second center point 1 and the position is used to light the h carrier for receiving It also carries wafers from the Crystal® edge-finding device. The hood is disposed on the carrier T, and when the hood is loaded with the carrier, the reaction gas is supplied in the hood, and the material is as described in the actual device. In the upper device, the light source and the photodetector are, for example, Set on the same side of the bearing plane. According to the embodiment of the present invention, in the side machine described above, the light source and the photodetector are disposed on different sides of the carrying plane, for example. In the above-described side machine, the light source is, for example, a laser light source. According to the embodiment of the present invention, in the above-mentioned machine, the first detection of the thief is, for example, a laser detector. According to the embodiment of the present invention, in the above-mentioned machine, a heater is further included and connected to the carrier. =, according to the embodiment of the present invention, in the above-mentioned machine, the seat and the take-up piece are positioned to locate and wait for the positive circle. The wafer holder is used to carry the wafer after the processing. In an embodiment of the ii creation, in the etching machine described above, the S disk = arm group is used to transport the wafer between the wafer carrier, the wafer edge locating device, the carrier plate, and the wafer carrier. According to the embodiment of the Portuguese board, in the above-mentioned fine machine table, the material of the carrier plate is, for example, shouting or graphite. In the embodiment of the invention, in the above-mentioned side machine, for example, a heat resistant material or a corrosion resistant gas material. M426869^ In accordance with the present embodiment, in the etching machine described above, the material of the gas mask is, for example, fusible polytetrafluoroethylene (PFA). According to the embodiment of the present invention, in the above-mentioned surname machine, the reaction gas is, for example, hydrofluoric acid. According to an embodiment of the present invention, in the etching machine described above, the wafer is, for example, a germanium wafer. According to an embodiment of the present invention, in the etching machine described above, the etching machine is used, for example, to remove an edge oxide layer on the wafer. According to an embodiment of the present invention, in the above-described money engraving machine, the shape of the wafer is, for example, a circle, a square or a square. Based on the above, in the wafer edge locating device of the present invention, the wafer can be centered accurately and quickly by clamping the wafer by the clamp to avoid the offset of the wafer on the carrier. . In addition, since the distance between the first center point and the contact point is designed as the shortest distance between the first center point and the flat port, the wafer is rotated by the rotating table and the light beam is detected by the photodetector. The ability to find the flat position of the wafer allows precise edge-finding of the wafer. Further, since the above-described crystal edge locating device is provided in the etching machine proposed in the present invention, the etched film layer specifications can be made uniform. The above and other objects, features and advantages of the present invention will become more apparent from the following description. . 6 M426869 [Embodiment] The wafer edge-finding recording proposed by this creation can be used to locate the wafer. In the following embodiments, the two-circle rim positioning device is turned over to the side machine tablecloth, but you: not limited to this. Fig. 1 is a view showing the etching machine of the first embodiment of the present invention. FIG. 2A to FIG. 2B are schematic diagrams showing the edge-finding positioning of the wafer by using the wafer edge-finding positioning of FIG. Referring to FIG. 1, the etching machine 1 includes wafer edge positioning 2'' carrier 300 and hood 400. The etching machine 1 is, for example, a machine. The button engraving machine has just been used to remove the film layer on the wafer, for example to remove the edge oxide layer on the wafer 500, but this creation does not use this. Referring to FIG. 2, FIG. 2A and FIG. 2B at the same time, the wafer edge-finishing “mounting” is used to perform edge-finding positioning on the wafer 5 with the flat opening 502. The wafer 500 is, for example, a germanium wafer. The wafer edge-finding device 2 includes a rotating table 202, a jig 204, a light source 2〇6, and a photodetector 2〇8. In this embodiment, the wafer 5 having the flat opening 502 is described by taking a circular shape as an example, but the present invention is not limited thereto. In other embodiments, the wafer 5 having the flat opening 502 may also be square or quasi-square. That is, as long as the wafer 500 has a flat opening 502', it is within the scope of the present invention. The rotating table 202 has a first center point ρι on its carrying plane 210, and carries and rotates the wafer 500. In this embodiment, the carrier plane 21 is included to include the carrier surface on the gray turntable 202 for carrying the wafer 5 and its extended plane. 7 M426869 When the wafer 500 is placed on the rotating table 202, the clamp 204 is used to clamp the wafer 500' such that the second center point p2 of the wafer 500 is aligned with the first center point P, by means of the fixture The manner of sandwiching the wafer 5 可 can accurately and quickly center the position of the second center point P2 of the wafer 500 to transport the wafer 500 from the wafer edge locating device 2 to the carrier. The distance of the board 300 is adjusted to a preset standard distance, thereby preventing the wafer 500 from being displaced at a position on the carrier 3〇〇. The light source 206 emits a light beam L having a contact point Pc with the bearing plane 21〇, wherein the distance D1 between the first f-center point pi and the contact point Pc is equal to the shortest between the second center point P2 and the flat port 5〇2. Distance d2. Light source 206 is, for example, a laser source. The light detector 208 is used to detect the light beam L. The photodetector 208 is, for example, a laser detector. The light source 206 and the photodetector 208 are disposed on the same side of the carrying plane 210, for example, in an integrally formed manner, such as on the picking arm 902 above the carrying plane 210, but the creation is not limited thereto. In another embodiment, the light source 206 and the photodetector 208 can also be disposed on a base (not shown) below the carrying plane 210. In other embodiments, the light source 206 and the photodetector 208 can be disposed at other locations, and the light source 206 and the light extractor 208 can also be separate components. In this embodiment, the method of performing the edge finding operation on the wafer 5 by the wafer edge locating device 2 说明 is explained as follows. First, the distance D1 between the center point P1 of the carrying plane 21〇 and the contact point Pc of the light beam L is counted as the shortest distance D2 between the second center point P2 of the wafer 500 and the flat opening 502. Next, referring to FIG. 2A, when the flat opening 5〇2 position M426869 of the wafer 5 is not positioned at a predetermined position, the light beam L emitted by the light source 206 is reflected by the wafer 500, and the photodetector 208 The light beam L reflected by the wafer 500 is detected. Then, referring to FIG. 2B, the position of the wafer 500 is rotated by the rotating table 202 until the distance D1 between the first center point pi and the contact point Pc is equal to the shortest distance D2 between the second center point P2 and the flat opening 502. At this time, the light beam L is no longer reflected by the wafer 500 and will pass through the side of the flat opening 502 of the wafer 5, so the light detector 208 will no longer detect the light beam L' reflected by the wafer 500. It can be determined that the flat port 502 of the wafer 5 has been adjusted to a predetermined position, and the edge finding operation of the wafer 500 is completed. The carrier 300 is configured to receive and carry the wafer 500 from the wafer edge locating device 200. The material of the carrier 300 is, for example, ceramic or graphite. The hood 400 is disposed above the carrier 3, and when the hood 400 covers the carrier 300, a reactive gas is supplied into the hood 400 for surging the wafer 500. The material of the hood 400 is, for example, a heat resistant material or a corrosion resistant gas material such as fusible polytetrafluoroethylene (PFA). The reaction gas supplied in the hood 400 is, for example, hydrofluoric acid. Further, the etching machine 100 may further include at least one of the transfer arm 4〇2, the heater 600, the take-up holder 700, the release holder 800, and the robot arm group 9〇〇. The transfer arm 402 is coupled to the hood 400 for adjusting the position of the hood 400. When the wafer 500 is engraved, the hood 400 can be moved by the transfer arm 4〇2 such that the hood 400 covers the carrier 300 to form an airtight reaction chamber in the hood 400. The heater 600 is coupled to the carrier 300 and is capable of heating the wafer 9 M426869 500 through the carrier 300. The wafer carrier 700 is used to carry the wafer 500 to be positioned and to be etched, and the wafer carrier 8 is used to carry the etched wafer 500. The robot arm set 900 can include a take-up arm 9〇2 and a release arm 904 for transporting crystal between the take-up seat 700, the wafer edge-positioning device 2〇〇, the carrier 3〇〇, and the release holder 800. Round 5〇〇. The take-up arm 902 is used to transport the wafer 500 ′ between the take-up holder 700 , the wafer edge locating device 200 and the carrier 300 , and the release arm 904 is used for the carrier 3 and the release holder 8 . The wafer 500 is transported between the crucibles. Based on the above embodiments, the wafer 5 can be accurately and quickly centered by clamping the wafer 5〇 by the clamp 2〇4 to avoid the position of the wafer 500 on the carrier 300. Offset. Further, since the distance between the first center point P1 and the contact point Pc is designed to be equal to the shortest distance between the second center point P2 and the flat opening 502, the wafer 5 is rotated by the rotary table 202 and the light detection is utilized. The detector 2〇8 performs a debt test on the light beam L to find the position of the flat opening 502 of the wafer 5, so that the wafer can be edge-finished accurately. In addition, since the etching apparatus 1() provided in the above embodiment has the wafer edge locating device 200, the wafer can be edge-finished and positioned accurately, so that the etched film specifications conform to the regulations. . 3A-3B are schematic diagrams showing edge-finding positioning of a wafer by using the crystal edge-finding positioning device of the second embodiment of the present invention. Referring to FIG. 1, FIG. 2A, FIG. 2B, FIG. 3A and FIG. 3B, the second embodiment differs from the first embodiment in that: in the wafer 26869 edge finding device 200 of the first embodiment, the light source 206 and The photodetector 208 is disposed, for example, on the same side of the carrying plane 21〇 in an integrally formed manner. However, in the wafer edge locating device 2a of the second embodiment, the light source 2〇6a and the light
伯測器208a例如是以互相分離的方式設置於承載平面ziu 的不同侧。舉例來說，光源2〇6a可設置在承載平面21〇 上方的取片臂902上，而光偵測器208a可設置在承載平面 210下方的的底座(未繪示)上。在另一實施例中，光源 與光偵測器208a的位置亦可互換，亦即光源2〇6a可設置 在承載平面210下方的的底座上，而光偵測器2〇8a可設置 在承載平面210上方的取片臂9〇2上。此外，第二實施例 中其他構件的材料、設置關係及功效已於第—實施例中進 行詳盡地描述，故於此不再贅述。 在第一實轭例中’利用晶圓尋邊定位裝置2〇〇a對晶圓 5〇〇々進行尋邊操作的方法說明如下。首先，將承載平面別 的第一中心點P1與光束L的接觸點以之間的距離仞設 計成等於晶圓500的第二十心點p2與平口 5()2之間的最 紐距離D2。接著，請參照圖2A，當晶圓5〇〇的平口撕 2並雜在縣位置時，絲綱a輕㈣的光束L ㈢被晶圓5G0所阻擔，所以光偵測器期 ==_，藉由旋轉台2‘=: 位置，直到第-中心點心接觸點 於第二中心點P2與平口 5〇2夕„龄々此離ϋ1等 τ ^ 卞502之間的最短距離D2時，井克 L不再被晶® 5GG轉且會穿過晶圓5⑻ 因此光制器2〇8a會谓測到光束 502側邊 此時可確定晶圓500 M426869 的平口 502已被調整至預定位置，而完成晶圓5〇〇的尋 操作。 综上所述，上述實施例至少具有下列優點： 1.藉由上述實施例所提出的晶圓尋邊定位裝 地對晶圓進行尋邊及定位。 2 ‘上述實施例所提出的蝕刻機台可使得經蝕刻後的膜 層規格符合規定。 、The detectors 208a are disposed on different sides of the carrier plane ziu, for example, in a mutually separated manner. For example, the light source 2〇6a can be disposed on the take-up arm 902 above the carrying plane 21〇, and the photodetector 208a can be disposed on a base (not shown) below the carrying plane 210. In another embodiment, the positions of the light source and the photodetector 208a are also interchangeable, that is, the light source 2〇6a can be disposed on the base below the carrying plane 210, and the photodetector 2〇8a can be disposed on the carrying The take-up arm 9〇2 above the plane 210. Further, the materials, arrangement relationships, and effects of other members in the second embodiment have been described in detail in the first embodiment, and thus will not be described again. In the first embodiment of the yoke, the method of performing the edge finding operation on the wafer 5 by the wafer edge locating device 2A is explained as follows. First, the distance 仞 between the first center point P1 of the bearing plane and the contact point of the light beam L is designed to be equal to the maximum distance D2 between the twentieth point p2 of the wafer 500 and the flat mouth 5 () 2 . Next, referring to FIG. 2A, when the flat opening of the wafer 5 is torn and mixed in the county position, the light beam L (3) of the wire a light (four) is blocked by the wafer 5G0, so the photodetector period ==_ By rotating the table 2'=: position until the first-center snack contact point is at the shortest distance D2 between the second center point P2 and the flat mouth 5〇2 々 々 ϋ ϋ 等 等 等 等 等 等 等 等 502 The gram L is no longer transferred by the crystal® 5GG and will pass through the wafer 5 (8). Therefore, the illuminator 2 〇 8a will measure the side of the beam 502. At this point, it can be determined that the flat 502 of the wafer 500 M426869 has been adjusted to the predetermined position. The sourcing operation of the wafer 5 is completed. In summary, the above embodiment has at least the following advantages: 1. Edge searching and positioning of the wafer by the wafer edge locating mounting proposed in the above embodiment. The etching machine proposed in the above embodiment can make the etched film specifications conform to the regulations.
雖然本創作已以實施例揭露如上，然其並非用以限定 本創作任何熟習此技藝者，在*脫離本齡之精神和範 圍内/可作些許之更動與潤飾，因此本創作之保護範圍 §視後附之申凊專利範圍所界定者為準。 【圖式簡單說明】 1所綠示為捕作之侧機台 園 的不 圖。 ，2A至圖2B所繪示為利用圖i之晶圓尋邊定位裝 對日日圓進行尋邊定位的示意圖。Although the present invention has been disclosed in the above embodiments, it is not intended to limit anyone skilled in the art, and is within the spirit and scope of the present invention/may make some changes and refinements, so the scope of protection of this creation § This is subject to the definition of the scope of the patent application. [Simple description of the map] 1 green is shown as the map of the side machine of the capture. 2A to 2B are schematic diagrams showing the edge finding of the Japanese yen by using the wafer edge positioning device of FIG.
^ 3A至圖3B轉示為本創作之第二實施例之 圓寻邊定絲置對晶進行尋邊定㈣示意圖。 【主要元件符號說明】 100 :蝕刻機台 200、200a:晶圓尋邊定位裝置 202 :旋轉台 204 :夾具 206、206a :光源 12 M426869 208、208a :光偵測器 210 :承載平面 300 :載板 400 :氣罩 402 :傳送手臂 500 .晶圓 502 :平口 600 :加熱器 700 :取片座 800 :放片座 900 :機械手臂組 902 :取片臂 904 :放片臂 D1 :距離 D2 :最短距離 L :光束 P1 :第一中心點 P2 :第二中心點^3A to Fig. 3B are schematic diagrams showing the edge-finding (four) of the circle-finishing fixed-wire setting of the second embodiment of the present invention. [Main component symbol description] 100: etching machine 200, 200a: wafer edge locating device 202: rotating table 204: jig 206, 206a: light source 12 M426869 208, 208a: photodetector 210: carrying plane 300: Plate 400: hood 402: transfer arm 500. Wafer 502: flat mouth 600: heater 700: take-up seat 800: release stand 900: robot arm set 902: take-up arm 904: release arm D1: distance D2: Shortest distance L: beam P1: first center point P2: second center point
Pc :接觸點Pc: contact point