M425128 五、新型說明： 【新型所屬之技術領域】 [0001] 本新型是有關於一種長晶爐，且特別是有關於一種可適 用以成長早晶棒的長晶爐。 【先前技術】 [0002] 太陽能發電的原理係利用太陽光來照射太陽能電池，透 過太陽光的光子能量可激發太陽能電池中的半導體材料 ，而產生電子-電洞對。電子與電洞分離後形成電壓降， 而產生電流。 太陽能電池係由是由半導體材料所製成，而所使用的基 板材料主要有單晶石夕（Monocrystalline Silicon)、 多晶石夕（Polycrystalline Silicon)以及非晶石夕 (Amorphous Silicon)。目前，以單晶石夕及多晶石夕兩種 材料的基板最為常見。 雖然，多晶矽之長晶過程中所需的成本較單晶矽低，但 以單多晶矽材料所製作之太陽能電池的轉換效率遠較多 晶石夕材料之太陽能電池高。因此，亟需一種長晶爐，可 大幅提升單晶棒之長晶良率與效率，以兼顧太陽能電池 之轉換效能與製作成本。 【新型内容】 [0003] 因此，本新型之一態樣就是在提供一種長晶爐，其上内 桶朝坩堝延伸，以遮蓋住加熱器之上緣，藉此可抑制加 熱器上端之熱量的散失。如此一來，不僅可減少長晶之 耗能，更可增加晶體原料熔湯的軸向溫度梯度與熔湯表 面的徑向溫度梯度。此外，上内桶外與爐室之間可填滿 表單编號A0101 第3頁/共17頁 保溫材，因此可增加晶體原料熔湯表面之溫度穩定性。 本新型之另一態樣是在提供一種長晶爐，其加大熱輻射 絕熱器之保溫材的厚度，藉此可減少晶體原料熔湯表面 之熱量賴射至晶棒。如此一來，可增加晶棒内的溫度梯 度，進而達到增加長晶速率的目的。 本新型之又一態樣是在提供一種長晶爐，其增加上蓋板 内之保溫材厚度，以提高上蓋板之下表面溫度。因此， 可有效避免長晶時因上蓋板之下表面溫度過冷，而導致 製程粉塵沉積在上蓋板之下表面上，而可避免這些沉積 之製程粉塵掉落至晶體原料熔湯中，進而可避免所形成 之晶棒產生差排。 本新型之再一態樣是在提供一種長晶爐，其增加底部保 溫層之厚度，藉此可有效增加晶體原料熔湯内的軸向溫 度梯度，進而可避免晶體原料熔湯内部因過冷而導致晶 棒扭曲變形。此外，底部保溫層之厚度的增加，可同時 提高爐室内之坩堝及其内晶體原料熔湯之液面的高度， 因此可有效增加晶棒的轴向溫度梯度，進而可增加晶棒 的生長速率。 本新型之再一態樣是在提供一種長晶爐，其設有保溫環 遮蓋在加熱器之上緣上方，因此可有效阻隔加熱器之熱 量由Jl方之上蓋板散失，而可降低上蓋政之溫庋，進_而 可增加晶棒内之溫度梯度，有效增加晶棒的成長速率。 此外，保溫環可將加熱器上方之熱量反射至坩堝，因此 可提高晶體原料熔湯之表面溫度，而可預防晶體原料熔 湯表面因軸向溫度梯度不足而發生過冷現象，進而可避 免晶棒產生差排。 表單编號A0101 第4頁/共17頁 根據本新型之上述目的，提出一種長晶爐。此長晶爐包 含一爐室、一掛禍、一加熱器、一上内桶、一上蓋板以 及一熱輻射絕熱器。坩堝設於爐室中，且適用以裝載晶 體原料。加熱器鄰設於坩堝旁，且適用以加熱晶體原料 。上内桶鄰設於坩堝旁，且遮蓋在加熱器之上緣上。其 中，此上内桶與掛禍之外側面之間之距離為10mm至20mm 。上蓋板設於上内桶上，且位於坩堝之上緣之上。熱輻 射絕熱器自前述上蓋板延伸至坩堝中。 依據本新型之一實施例，上述之熱輻射絕熱器與坩堝之 内側面之間之距離為15mra至20匪。 依據本新型之另一實施例，上述之上蓋板包含一保溫内 層，且此保溫内層之厚度為25mm至35mm 〇 依據本新型之又一實施例，上述之上蓋板之上表面之高 度為爐室之頂端之高度的60%至85%。 依據本新型之再一實施例，上述之長晶爐更包含一底部 保溫層設於爐室之底面上，其中此底部保溫層之厚度為 10 0mm至12Oram。 依據本新型之再一實施例，上述加熱器之上緣與上内桶 之下表面之間的距離為2cm至3cm。 依據本新型之再一實施例，上述之長晶爐更包含一保溫 環遮蓋在加熱器之上緣上方，且位於上内桶下方。 依據本新型之再一實施例，上述之加熱器之上緣與保溫 環之下表面之間的距離為2cm至3cm。 【實施方式】 [0004] 請參照第1圖，其係繪示依照本新型之一實施方式的一種 長晶爐之裝置示意圖。本實施方式之長晶爐100a可適用 表單編號A0101 第5頁/共17頁 於生長單晶棒（mono-ingot)，例如單晶石夕棒。在一實施 例中，長晶爐100a主要包含爐室104、坩堝144、加熱器 124、上内桶110、上蓋板118與熱輻射絕熱器134。長晶 爐100a更可包含爐室102，其中爐室102設置在爐室104 之上方且彼此互相連通。因此，爐室102又可稱上爐室， 而爐室104可稱為下爐室。此外，由於晶體原料係在下方 之爐室104予以加熱熔融，因此爐室104内之溫度明顯較 爐室102内的溫度高。爐室102與104之材料可採用鋼材 〇 坩堝144設置在爐室104中。坩堝144可包含石英坩堝132 與石墨坩堝130。石英坩堝132覆蓋在石墨坩堝130之内 側面上。坩堝144可裝載所欲生長之晶棒140的晶體原料 。在一實施例中，晶體原料可為矽礦。長晶爐100a可包 含坩堝承盤128與坩堝軸126。坩堝軸126設於坩堝承盤 128之下方，以支承坩堝承盤128。坩堝承盤128則設於 坩堝144之石墨坩堝130的下方，以支承坩堝144。坩堝 承盤128與坩堝轴126之材料可選擇石墨，以提供坩堝 144足夠的支承強度。 加熱器124設置在爐室104中，且鄰近於坩堝144。此外 ，加熱器124可例如設於坩堝144之偏下部的旁邊。加熱 器124可用以加爇坩堝144内所裝載之晶體原料，以將晶 體原料熔成液態的晶體熔湯142。在一實施例中，晶體熔 湯142可為矽熔湯。配合坩堝144的形狀，加熱器124可 呈環狀結構，且此環狀加熱器124圍設於坩堝144之下部 的外圍。加熱器124之材料可例如選用石墨。 請一併參照第2圖，其係繪示依照本新型之一實施方式的 表單编號A0101 第6頁/共17頁 種長晶爐之部分裝置的放大圖。上内桶110設於爐室 104内，且鄰近於坩堝144。上内桶110之材料可例如採 用石墨。上内桶110與爐室1〇4之内側面之間所形成之空 間可充填保溫層114 »保溫層114之材料可例如選用石墨 碳魅。在本實施方式中，如第2圖所示，上内桶11〇進一 步朝堆堝144的方向延伸，以延伸在加熱器124之上方， 並遮蓋住加熱器124之上緣160。 上内桶110遮蓋住加熱器124之上緣160，可有效抑制加 熱器124上端之熱量的散失。如此一來，不僅可減少長晶 期間所消耗之能量，更可增加熔湯142内之轴向溫度梯度 與熔湯142之表面的徑向溫度梯度。此外’上内桶丨丨卩與 爐室104之内側面之間所充填之保溫層114，可增加熔湯 142之表面的溫度穩定性。因此，可避免炫湯142之表面 因突然溫度過冷而導致晶棒14〇產生差棑。在一實施例中 ’如第2圖所示，上内桶11〇之下表面158與加熱器124之 上緣160之間的距離162範圍可例如從2cm至3cm。 雖然在不接觸到坩堝144的情況下，上内桶11〇愈接近坩 堝144，對於抑制加熱器1.24之熱量的散失愈好。但是， 上内桶110若過於接近掛禍144，卻又會導致在長晶過程 時，氣流無法順暢地通過坩堝144與上内桶110之間。如 此一來’氣流將無法順利地帶走熔湯142上方因石英坩堝 132經加熱後所釋出之氧氣，而造成晶棒14〇内的氧含量 過高。因此，如第2圖所示，在一實施例中，上内桶 與坩堝144之外側面146之間之距離150的範圍可例如約 從10mm至20mm 。 上蓋板118亦設於爐室104内，且位於上内桶11〇上，並 表單編號A0101 第7頁/共17頁 M425128 且位於坩堝144之上緣之上"上蓋板118主要包含石墨外 層120與保溫内層122。其中，保溫内層122填充於石墨 外層120所圍設成的空間中。保溫内層122之材料可例如 選用石墨碳鼓》在一實施例中，如第2圖所示，可增加上 蓋板118内之保溫内層122的厚度154，以抑制上蓋板118 下方之熱量往上方的傳遞，藉此來提高上蓋板118之下表 面174的溫度。上蓋板118之下表面174溫度的提升，可 有效避免長晶時因上蓋板118之下表面174溫度過冷，而 導致製程中所產生之粉塵’例如氧化碎粉塵，沉積在上 蓋板118之下表面174上。故，可大幅降低製程粉塵掉落 至熔湯142中的可能性’而可有效避免所形成之晶棒14〇 產生差排。 在一例子中，如第2圖所示，上蓋板118之保溫内層122的 厚度154範圍可為從25mm至35mm。此外，上蓋板118之下 表面174的溫度範圍可例如控制在從1440K至1460K » 熱韓射絕熱器134設於爐室104内’且與上蓋板118接合 ’並自上蓋板118而朝掛禍144内延伸。在掛禍144中時 ’熱輕射絕熱器134係介於財瑪144之内側面148與晶棒 140之間’且位於溶湯142之上方。熱輪射絕熱器134可 包含石墨外桶136與保溫内層138。其中，保溫内層1 38 填充於石墨外桶1加蛴圍設成之腔室中。保溫内層138之 材料可例如為石墨碳耗。 在本實施方式中，可藉由將熱輻射絕熱器134内之保溫内 層138增厚的方式，來可減少溶湯142表面之熱量輕射至 晶棒140 ’藉此可增加晶棒14〇内的溫度梯度，進而可增 加長晶之速率。在一實施例中，藉由擴大石墨外桶136所 第8頁/共17頁 表單編號A0101 圍成之空間，來容納加厚的保溫内層138。但是擴大石墨 外桶136内之空間時，若石墨外桶136的向外擴張程度太 大而導致石墨外桶136過於靠近石英坩堝132時，石英坩 堝132可能會在長晶過程中因受熱變形而碰撞到熱輻射絕 熱器134。如此將造成炫湯142之液面晃動，進而導致晶 棒140產生差排。 此外，石墨外桶136與石英坩堝132太接近時，氬氣氣流 會因石墨外桶136與石英坩堝132之間的流道太小而無法 順暢地通過。如此將導致氬氣氣流無法順利帶走熔湯142 表面的氧'氣，而造成晶棒140内的氧含量提高。因此，如 第2圖所示，在一實施例中，熱輻射絕熱器134與坩堝144 之内侧面14 8之間之距離1 5 2的範圍可例如控制在從15mra 至2 0mm。 長晶爐100a亦可包含承盤106。承盤106設於爐室104内 ，且位於爐室104之底面上。承盤106之材料可選用石墨 。在長晶爐l〇〇a中，承盤106與爐室104之底面之間可填 充底部保溫層116。此底部保溫層116之材料可採用石墨 碳氈。發明人發現底部保溫層11 6之厚度156大小會影響 晶棒140的生長速率與品質。 舉例而言，熔湯142與晶棒140之材料均為矽的情況下， 若底部保溫層11 6太厚，例如超過120毫米（ram)時，會使 得矽熔湯142内的溫度梯度過大，而造成矽晶棒140的拉 升速度變慢。發明人根據所進行之模擬的結果，獲得底 部保溫層116之厚度156由70mm增加至100mm時，石夕溶湯 142之最底部的溫度可增加1. 2°C。依照比例推算，可知 底部保溫層116之厚度156由70mm增加至120mm時，矽熔 表單编號A0101 第9頁/共17頁 %142之最底部的溫度可增加2°c。由於，石夕炫湯142之最 底部的溫度若低於1695K，矽晶棒140在生長時易發生扭 曲變形的現象。另一方面，矽熔湯丨42之最底部的溫度若 高於1 697K，會因為矽熔湯142太熱而導致矽晶生長速度 過慢。 有鑒於此，在此實施例中，底部保溫層116之厚度156的 範圍可控制在從100 mm至120mm。藉由將底部保溫層116 之厚度從一般的70麗增厚至l〇〇mmii2〇mm，可有效增加 矽熔湯142内之轴向溫度梯度，進而可避免矽熔湯142内 部因過冷而導致單晶矽之晶棒14 〇扭曲變形。 此外’底部保溫層116之厚度的增加可同時提高爐室1〇4 内之坩堝144、上蓋板118、上内桶11〇、加熱器124與熱 轄射絕熱器134等部件與矽熔湯142之表面高度。如此一 來，矽熔湯142之液面的中心點會更接近長晶爐1〇〇a之上 方爐至102的冷區，而可有效增加梦晶棒14〇之軸向溫度 梯度’進而可增加矽晶棒14〇的生長速率。在一實施例中 ’如第1圖所示’增厚底部保溫層116後，上蓋板118之上 表面176的高度164為爐室1〇4之頂端178之高度166的 60%至85%。 長晶爐100a更可包含下内桶1〇8。下内桶1〇8亦設置於爐 室104内，且環設於爐室104之内彻丨面上，並-也^：承盤--106之上方而為承盤1〇6所承托。下内桶1〇8之材料可選 用石墨。下内桶108與爐室104之内側面之間所圍成之空 間亦可充填保溫層112，以利維持爐室104熱場之溫度。 保溫層112之材料可例如選用石墨碳氈。 請參照第3圖，其係繪示依照本新型之另一實施方式的一 表單编號A0101 第10頁/共17頁 種長晶爐之裝置示意圖。在此實施方式中，長晶爐l〇〇b 之裝置架構大致上與上述實施方式之長晶爐10 〇a的裝置 架構相同’二者的差異在於長晶爐l〇〇b更包含有保溫環 168。在長晶爐1〇〇b中，保溫環168環設於爐室104内， 且位於加熱器124上’並遮蓋住加熱器124之上緣160。 此外，保溫環168位於上内桶110之下方，而可承托上内 桶110。保溫環168之材料可例如為石墨。 利用保溫環168遮蓋在加熱器124之上方，可有效阻絕加 熱器124之熱量朝上蓋板118的方向散失，因此可降低上 蓋板118之溫度’進而可增加晶棒140内之溫度梯度，達 到增加晶棒140之成長速率的效果。而且，保溫環Mg更 可將加熱器124上方之熱量反射至掛禍144，因此不僅可 減少長晶期間所消耗之能量，更可提高熔湯丨42之表面溫 度、以及溶湯142内之轴向溫度梯度與炫湯142之表面的 徑向溫度梯度。如此一來，可預防熔湯丨42表面因轴向溫 度梯度不足而發生過冷現象，進而可避免晶棒14〇產生差 排。在一實施例中，加熱器124之上緣160與保溫環168 之下表面170之間的距離172的範圍可控制為從2cn^3cm 〇 在一示範實施例中，長晶爐結合上内桶遮蓋住加熱器上 緣、上内桶與爐室之間充填保溫村、底部保溫層增厚、 設置保溫環遮蓋住加熱器上緣、上蓋板之保溫内層增厚 、以及熱輻射絕熱器之保溫内層增厚等設計，可具有多. 項優勢。這些優勢包含可提升長晶速率，降低長晶能耗 ,減少晶棒扭曲和變形的機率，減少沉積在上蓋板之下 表面的製程粉塵的沉積量，並可增加單晶的良率◊在一 表單编號A0101 第11頁/共17頁 M425128 例子中，利用此長晶爐來成長單晶棒時，單晶的良率可 從利用習知長晶爐的40. 48%提升到8 0. 19%。此外，晶棒 的拉升速率更可從利用習知長晶爐的0. 6毫米/分 (隱/11^11)提升到0.72111111/111111。 雖然本新型已以實施方式揭露如上，然其並非用以限定 本新型，任何在此技術領域中具有通常知識者，在不脫 離本新型之精神和範圍内，當可作各種之更動與潤飾， 因此本新型之保護範圍當視後附之申請專利範圍所界定 者為準。 【圖式簡單說明】 [0005] 為讓本新型之上述和其他目的、特徵、優點與實施例能 更明顯易懂，所附圖式之說明如下： 第1圖係繪示依照本新型之一實施方式的一種長晶爐之裝 置示意圖。 第2圖係繪示依照本新型之一實施方式的一種長晶爐之部 分裝置的放大圖。 第3圖係繪示依照本新型之另一實施方式的一種長晶爐之 裝置示意圖。 【主要元件符號說明】 [0006] [0007] 10 0 a ·長晶爐 100b :長晶爐 102 :爐室 104 :爐室 106 :承盤 108 :下内桶 110 :上内桶 112 :保溫層 114 :保溫層 116 :底部保溫層 表單编號A0101 第12頁/共17頁 M425128 118 :上蓋板 1 2 0 :石墨外層 122 :保溫内層 124 :加熱器 126 :坩堝軸 128 :坩堝承盤 1 3 0 :石墨坩堝 132 :石英坩堝 134 :熱輻射絕熱器 136 :石墨外桶 138 :保溫内層 140 :晶棒 142 :熔湯 144 :坩堝 14 6 :外側面 148 :内側面 150 :距離 152 :距離 154 :厚度 156 :厚度 158 :下表面 160 :上緣 162 :距離 164 :高度 166 :高度 168 :保溫環 170 :下表面 172 :距離 174 :下表面 176 :上表面 178 :頂端 表單編號A0101 第13頁/共17頁M425128 V. New description: [New technical field] [0001] The present invention relates to a crystal growth furnace, and in particular to a crystal growth furnace which can be used to grow early crystal rods. [Prior Art] [0002] The principle of solar power generation uses sunlight to illuminate a solar cell, and the photon energy of the sunlight can excite the semiconductor material in the solar cell to generate an electron-hole pair. The electrons are separated from the hole to form a voltage drop, which generates a current. The solar cell is made of a semiconductor material, and the substrate materials used are mainly Monocrystalline Silicon, Polycrystalline Silicon, and Amorphous Silicon. At present, substrates of single crystal stone and polycrystalline stone are the most common. Although the cost required for the growth of polycrystalline germanium is lower than that of single crystal germanium, the solar cell produced by the single polycrystalline germanium material has much higher conversion efficiency. The solar cell of the spar material is higher. Therefore, there is a need for a crystal growth furnace which can greatly increase the crystal growth rate and efficiency of the single crystal rod to take into account the conversion efficiency and production cost of the solar cell. [New content] [0003] Therefore, one aspect of the present invention is to provide a crystal growth furnace in which the inner barrel extends toward the crucible to cover the upper edge of the heater, thereby suppressing the loss of heat at the upper end of the heater. . In this way, not only the energy consumption of the crystal growth can be reduced, but also the axial temperature gradient of the crystal material melt and the radial temperature gradient of the molten steel surface can be increased. In addition, between the upper inner barrel and the furnace chamber, the form number A0101 can be filled with the heat insulating material, so that the temperature stability of the molten crystal surface of the crystal raw material can be increased. Another aspect of the present invention is to provide a crystal growth furnace which increases the thickness of the thermal insulation material of the thermal radiation insulator, thereby reducing the heat of the crystal material melting surface to the ingot. In this way, the temperature gradient in the ingot can be increased to achieve the purpose of increasing the rate of growth. Another aspect of the present invention is to provide a crystal growth furnace which increases the thickness of the insulation material in the upper cover to increase the temperature of the lower surface of the upper cover. Therefore, it is effective to avoid the super-cooling of the surface of the upper cover plate during the growth of the upper cover, and the process dust is deposited on the lower surface of the upper cover plate, and the process dust of the deposition can be prevented from falling into the crystal material melting material. Further, it is possible to prevent the formed ingot from being poorly discharged. A further aspect of the present invention is to provide a crystal growth furnace which increases the thickness of the bottom insulation layer, thereby effectively increasing the axial temperature gradient in the crystal material melt, thereby preventing the interior of the crystal material melting furnace from being too cold. And the crystal rod is distorted. In addition, the increase of the thickness of the bottom insulation layer can simultaneously increase the height of the liquid level in the furnace chamber and the crystal material inside the furnace, thereby effectively increasing the axial temperature gradient of the crystal rod, thereby increasing the growth rate of the crystal rod. . In another aspect of the present invention, a crystal growth furnace is provided, which is provided with a heat insulation ring covering the upper edge of the heater, so that the heat of the heater can be effectively blocked by the cover of the J1 side, and the upper cover can be lowered. The gentleness of politics can increase the temperature gradient inside the ingot and effectively increase the growth rate of the ingot. In addition, the heat retaining ring can reflect the heat above the heater to the crucible, thereby increasing the surface temperature of the crystal raw material melting, and preventing the surface of the crystal raw material melting surface from being excessively cooled due to insufficient axial temperature gradient, thereby avoiding crystals. The stick produces a difference. Form No. A0101 Page 4 of 17 According to the above object of the present invention, a crystal growth furnace is proposed. The crystal growth furnace includes a furnace chamber, a hazard, a heater, an upper inner tub, an upper cover, and a thermal radiant heat insulator. The crucible is placed in the furnace chamber and is suitable for loading crystal materials. The heater is placed next to the crucible and is suitable for heating the crystal material. The upper inner bucket is adjacent to the crucible and is covered on the upper edge of the heater. Among them, the distance between the upper inner bucket and the outer side of the hanging bucket is 10 mm to 20 mm. The upper cover is disposed on the upper inner tub and above the upper edge of the crucible. The heat radiation insulator extends from the aforementioned upper cover to the crucible. According to an embodiment of the present invention, the distance between the heat radiation insulator and the inner side of the crucible is 15 mra to 20 Torr. According to another embodiment of the present invention, the upper cover plate comprises a heat insulating inner layer, and the thickness of the heat insulating inner layer is 25 mm to 35 mm. According to still another embodiment of the present invention, the height of the upper surface of the upper cover plate is The height of the top of the furnace chamber is 60% to 85%. According to still another embodiment of the present invention, the crystal growth furnace further includes a bottom insulation layer disposed on a bottom surface of the furnace chamber, wherein the bottom insulation layer has a thickness of from 10 mm to 12 ram. According to still another embodiment of the present invention, the distance between the upper edge of the heater and the lower surface of the upper inner tub is 2 cm to 3 cm. According to still another embodiment of the present invention, the crystal growth furnace further includes a heat retaining ring covering the upper edge of the heater and located below the upper inner tub. According to still another embodiment of the present invention, the distance between the upper edge of the heater and the lower surface of the heat retaining ring is 2 cm to 3 cm. [Embodiment] [0004] Referring to Figure 1, there is shown a schematic view of a device for a crystal growth furnace in accordance with an embodiment of the present invention. The crystal growth furnace 100a of the present embodiment is applicable to Form No. A0101, Page 5 of 17 for growing a mono-ingot, such as a single crystal stone rod. In one embodiment, the crystal growth furnace 100a mainly includes a furnace chamber 104, a crucible 144, a heater 124, an upper inner tub 110, an upper cover 118, and a thermal radiation insulator 134. The crystal growth furnace 100a may further include a furnace chamber 102 in which the furnace chambers 102 are disposed above the furnace chambers 104 and communicate with each other. Therefore, the furnace chamber 102 can be referred to as a furnace chamber, and the furnace chamber 104 can be referred to as a lower furnace chamber. Further, since the crystal raw material is heated and melted in the lower furnace chamber 104, the temperature in the furnace chamber 104 is significantly higher than the temperature in the furnace chamber 102. The materials of the furnace chambers 102 and 104 may be disposed in the furnace chamber 104 using a steel material 坩埚 144. The crucible 144 may include a quartz crucible 132 and a graphite crucible 130. The quartz crucible 132 is covered on the inner side of the graphite crucible 130. The crucible 144 can be loaded with the crystal material of the ingot 140 to be grown. In an embodiment, the crystalline feedstock can be an antimony ore. The crystal growth furnace 100a may include a crucible disk 128 and a crucible shaft 126. A yoke 126 is disposed below the yoke 128 to support the yoke 128. The retainer disk 128 is disposed below the graphite crucible 130 of the crucible 144 to support the crucible 144. The material of the yoke 128 and the yoke 126 may be graphite to provide sufficient support strength for the 144 144. A heater 124 is disposed in the furnace chamber 104 adjacent to the crucible 144. Further, the heater 124 may be disposed, for example, beside the lower portion of the crucible 144. The heater 124 can be used to twist the crystal material loaded in the crucible 144 to melt the crystal material into a liquid crystal melt 142. In one embodiment, the crystal melt 142 can be a soup. In accordance with the shape of the crucible 144, the heater 124 may have an annular structure, and the annular heater 124 surrounds the periphery of the lower portion of the crucible 144. The material of the heater 124 can be, for example, graphite. Referring to Fig. 2, there is shown an enlarged view of a portion of the apparatus for the crystal growth furnace of Form No. A0101, page 6 of the embodiment of the present invention. The upper inner tub 110 is disposed within the furnace chamber 104 and adjacent to the crucible 144. The material of the upper inner tub 110 can be, for example, graphite. The space formed between the upper inner tub 110 and the inner side surface of the furnace chamber 1〇4 can be filled with the heat insulating layer 114. The material of the heat insulating layer 114 can be, for example, graphite carbon. In the present embodiment, as shown in Fig. 2, the upper inner tub 11 is further extended in the direction of the stack 144 to extend above the heater 124 and to cover the upper edge 160 of the heater 124. The upper inner tub 110 covers the upper edge 160 of the heater 124, and the heat loss at the upper end of the heater 124 can be effectively suppressed. In this way, not only the energy consumed during the growth of the crystals but also the radial temperature gradient of the surface of the melt 142 and the radial temperature gradient of the surface of the melt 142 can be increased. Further, the insulating layer 114 filled between the upper inner tub and the inner side of the furnace chamber 104 increases the temperature stability of the surface of the melt 142. Therefore, it is possible to prevent the surface of the broth 142 from being caused by sudden temperature overcooling. In one embodiment, as shown in Fig. 2, the distance 162 between the lower surface 158 of the upper inner tub 11 与 and the upper edge 160 of the heater 124 may range, for example, from 2 cm to 3 cm. Although the upper inner tub 11 is closer to the crucible 144 without contacting the crucible 144, the better the dissipation of the heat of the heater 1.24 is suppressed. However, if the upper inner tub 110 is too close to the crash 144, it will cause the airflow to not smoothly pass between the cymbal 144 and the upper inner tub 110 during the crystal growth process. As a result, the airflow will not be able to smoothly remove the oxygen released from the molten quartz 142 above the quartz crucible 132, causing the oxygen content in the ingot 14 to be too high. Thus, as shown in Fig. 2, in one embodiment, the distance 150 between the upper inner barrel and the outer side 146 of the crucible 144 may range, for example, from about 10 mm to about 20 mm. The upper cover 118 is also disposed in the furnace chamber 104 and is located on the upper inner barrel 11〇, and has the form number A0101, page 7 of 17 and M425128, and is located above the upper edge of the crucible 144. The upper cover 118 mainly contains graphite. The outer layer 120 and the inner layer 122 are insulated. The heat insulating inner layer 122 is filled in a space surrounded by the graphite outer layer 120. The material of the heat insulating inner layer 122 can be, for example, a graphite carbon drum. In an embodiment, as shown in FIG. 2, the thickness 154 of the heat insulating inner layer 122 in the upper cover 118 can be increased to suppress the heat under the upper cover 118. The upper transfer thereby increases the temperature of the lower surface 174 of the upper cover 118. The temperature rise of the lower surface 174 of the upper cover 118 can effectively prevent the dust generated during the process from being excessively cooled due to the temperature of the lower surface 174 of the upper cover 118 during the growth of the upper cover 118, such as oxidized dust, deposited on the upper cover. 118 below surface 174. Therefore, the possibility that the process dust is dropped into the melt 142 can be greatly reduced, and the formed ingots 14 有效 can be effectively prevented from being displaced. In one example, as shown in Fig. 2, the thickness 154 of the insulating inner layer 122 of the upper cover 118 may range from 25 mm to 35 mm. In addition, the temperature range of the lower surface 174 of the upper cover 118 can be controlled, for example, from 1440K to 1460K » The thermal Korean thermal insulator 134 is disposed in the furnace chamber 104 and is engaged with the upper cover 118 and from the upper cover 118. Extending into the blame 144. In the case of the accident 144, the 'thermal light-emitting insulator 134 is between the side 148 of the gamma 144 and the ingot 140' and is located above the dissolved soup 142. The thermal wheel insulator 134 can include a graphite outer barrel 136 and a thermal insulation inner layer 138. The inner insulating layer 1 38 is filled in a chamber surrounded by a graphite outer tub 1 and twisted. The material of the insulating inner layer 138 can be, for example, graphite carbon consumption. In the present embodiment, the heat of the inner layer 138 of the heat radiant insulator 134 can be thickened to reduce the heat of the surface of the dissolved 142 to the ingot 140', thereby increasing the inside of the ingot 14 The temperature gradient, which in turn increases the rate of crystal growth. In one embodiment, the thicker insulating inner layer 138 is accommodated by enlarging the space enclosed by the graphite outer tub 136 on page 8 of the form number A0101. However, when the space inside the graphite outer tub 136 is enlarged, if the outward expansion of the graphite outer tub 136 is too large and the graphite outer tub 136 is too close to the quartz crucible 132, the quartz crucible 132 may be deformed by heat during the crystal growth process. Colliding with the thermal radiation insulator 134. This will cause the liquid level of the broth 142 to sway, which in turn causes the crystal rod 140 to be in a poor row. Further, when the graphite outer tub 136 is too close to the quartz crucible 132, the argon gas flow cannot be smoothly passed because the flow path between the graphite outer tub 136 and the quartz crucible 132 is too small. This will result in the argon gas flow not being able to smoothly carry away the oxygen's gas on the surface of the melt 142, resulting in an increase in the oxygen content in the ingot 400. Thus, as shown in Fig. 2, in one embodiment, the range of distance 1 5 2 between the thermal radiation insulator 134 and the inner side surface 14 8 of the crucible 144 can be controlled, for example, from 15 mra to 20 mm. The crystal growth furnace 100a may also include a retainer 106. The retainer 106 is disposed in the furnace chamber 104 and is located on the bottom surface of the furnace chamber 104. The material of the retainer 106 can be graphite. In the crystal growth furnace l〇〇a, a bottom insulation layer 116 may be filled between the retainer 106 and the bottom surface of the furnace chamber 104. The material of the bottom insulating layer 116 may be a graphite carbon felt. The inventors have found that the thickness 156 of the bottom insulating layer 116 affects the growth rate and quality of the ingot 140. For example, if the materials of the melt 142 and the ingot 140 are both tantalum, if the bottom insulating layer 116 is too thick, for example, more than 120 millimeters (ram), the temperature gradient in the crucible 142 may be too large. As a result, the pulling speed of the twin rod 140 is slowed down. 2°C。 The temperature of the bottom portion of the dialysis soup 142 can be increased by 1. 2 ° C, the thickness of the bottom insulating layer 116 is increased from 70 mm to 100 mm. According to the proportional calculation, it can be seen that when the thickness 156 of the bottom insulating layer 116 is increased from 70 mm to 120 mm, the temperature at the bottom of the %142 can be increased by 2 °c. Since the temperature at the bottom of the Shi Xi Xuan Tang 142 is lower than 1695K, the twin rod 140 is prone to twisting and deformation during growth. On the other hand, if the temperature at the bottom of the crucible 42 is higher than 1 697 K, the growth rate of the twins is too slow because the crucible 142 is too hot. In view of this, in this embodiment, the thickness 156 of the bottom insulating layer 116 can be controlled from 100 mm to 120 mm. By thickening the thickness of the bottom insulating layer 116 from a general 70 liter to l 〇〇 mm ii 2 〇 mm, the axial temperature gradient in the bismuth melt 142 can be effectively increased, thereby preventing the inside of the smelting soup 142 from being too cold. The ingot of the single crystal germanium is twisted and deformed. In addition, the increase of the thickness of the bottom insulating layer 116 can simultaneously increase the 坩埚144 of the furnace chamber 1〇4, the upper cover 118, the upper inner barrel 11〇, the heater 124 and the thermal igniting heat insulator 134, and the crucible 142. The height of the surface. In this way, the center point of the liquid surface of the smelting soup 142 will be closer to the cold zone above the furnace of the crystal growth furnace 1 〇〇a to 102, and the axial temperature gradient of the dream crystal rod 14 ' can be effectively increased. Increase the growth rate of the twin rod 14 〇. In one embodiment, 'the thickness 164 of the upper surface 176 of the upper cover 118 is 60% to 85% of the height 166 of the top end 178 of the furnace chamber 1〇4 after thickening the bottom insulation layer 116 as shown in FIG. . The crystal growth furnace 100a may further include a lower inner barrel 1〇8. The lower inner tub 1〇8 is also disposed in the furnace chamber 104, and is disposed on the inner surface of the furnace chamber 104, and is also supported by the retaining plate 1〇6 above the retaining plate-106. The material of the lower inner barrel 1〇8 may be graphite. The space enclosed between the lower inner tub 108 and the inner side of the furnace chamber 104 may also be filled with the thermal insulation layer 112 to maintain the temperature of the thermal field of the furnace chamber 104. The material of the insulating layer 112 can be, for example, a graphite carbon felt. Referring to Fig. 3, there is shown a schematic diagram of a device for a crystal growth furnace according to another embodiment of the present invention, Form No. A0101, Page 10/17. In this embodiment, the device structure of the crystal growth furnace l〇〇b is substantially the same as that of the crystal growth furnace 10 〇a of the above embodiment. The difference between the two is that the crystal growth furnace l〇〇b further contains heat preservation. Ring 168. In the crystal growth furnace 1b, the heat retention ring 168 is disposed within the furnace chamber 104 and is located on the heater 124 and covers the upper edge 160 of the heater 124. In addition, the heat retaining ring 168 is located below the upper inner tub 110 to support the upper inner tub 110. The material of the heat retaining ring 168 can be, for example, graphite. Covering the heater 124 with the heat retaining ring 168 can effectively prevent the heat of the heater 124 from being dissipated in the direction of the upper cover 118, thereby reducing the temperature of the upper cover 118, thereby increasing the temperature gradient in the ingot 140. The effect of increasing the growth rate of the ingot 140 is achieved. Moreover, the heat retaining ring Mg can further reflect the heat above the heater 124 to the hazard 144, thereby not only reducing the energy consumed during the growth of the crystal, but also increasing the surface temperature of the molten crucible 42 and the axial direction of the molten soup 142. The temperature gradient and the radial temperature gradient of the surface of the broth 142. In this way, it is possible to prevent the surface of the molten stone 42 from being overcooled due to insufficient axial temperature gradient, thereby preventing the crystal rod 14 from being misaligned. In one embodiment, the distance 172 between the upper edge 160 of the heater 124 and the lower surface 170 of the heat retaining ring 168 can be controlled from 2 cn ^ 3 cm 〇 in an exemplary embodiment, the crystal growth furnace is covered with the inner barrel The upper edge of the heater is filled, the thermal insulation village is filled between the upper inner barrel and the furnace chamber, the bottom insulation layer is thickened, the thermal insulation ring is covered to cover the upper edge of the heater, the inner layer of the upper cover is thickened, and the inner layer of the thermal radiation insulator is insulated. Designs such as thickening can have many advantages. These advantages include increasing the rate of growth, reducing the energy consumption of the crystal growth, reducing the chance of distortion and deformation of the ingot, reducing the deposition of process dust deposited on the lower surface of the upper cover, and increasing the yield of the single crystal. A form number A0101 Page 11 of 17 M425128 In the example, when using this crystal growth furnace to grow a single crystal rod, the yield of the single crystal can be increased from 40.48% to 80 using the conventional crystal growth furnace. 19%. In addition, the pulling rate of the ingot can be increased from 0.6 mm/min (hidden/11^11) to 0.72111111/111111 using a conventional crystal growth furnace. Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention, and any one of ordinary skill in the art can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the scope of protection of this new type is subject to the definition of the scope of the patent application. BRIEF DESCRIPTION OF THE DRAWINGS [0005] The above and other objects, features, advantages and embodiments of the present invention will become more apparent and understood. A schematic diagram of a device for a crystal growth furnace of an embodiment. Figure 2 is an enlarged view of a portion of a crystal growth furnace in accordance with an embodiment of the present invention. Figure 3 is a schematic view of a device for a crystal growth furnace in accordance with another embodiment of the present invention. [Main component symbol description] [0006] [0007] 10 0 a · Growth furnace 100b: crystal growth furnace 102: furnace chamber 104: furnace chamber 106: retainer 108: lower inner drum 110: upper inner drum 112: insulation layer 114: Insulation layer 116: bottom insulation layer form number A0101 page 12/total 17 pages M425128 118: upper cover plate 1 2 0: graphite outer layer 122: insulation inner layer 124: heater 126: 坩埚 axis 128: 坩埚 盘 1 3 0 : Graphite crucible 132 : Quartz crucible 134 : Thermal radiation insulator 136 : Graphite outer barrel 138 : Insulation inner layer 140 : Ingot 142 : Melt 144 : 坩埚 14 6 : Outer side 148 : Inner side 150 : Distance 152 : Distance 154 : Thickness 156: Thickness 158: Lower surface 160: Upper edge 162: Distance 164: Height 166: Height 168: Thermal insulation ring 170: Lower surface 172: Distance 174: Lower surface 176: Upper surface 178: Top form number A0101 Page 13/ Total 17 pages