M422745 五、新型說明： 【新型所屬之技術領域】 更可持續提供濃 本創作係有關於-種基板處理裝置，尤指 僅可有效排除_過程情產生之氣泡以提升蝴^質，自裝置。不 度均勻之飯刻液而有效控制蝕刻效率。 【先前技術】 未來=^稍耗竭，全球原油價格不斷舉升，再加上梅意識高寐， 未來如侧應人類對能源的依賴，並兼顧愛護地球之宗旨，致使世界各大 之發展° _導體編言，雖然太陽 月匕電池產業之技術層面或資金的進人門檻不高，但是撕 太=池製造縣_偏高。域，如何降低續能電池之製造成 以符合社會大眾之使用需求，即成為太陽能電池發展之重要課題之一。 ^陽能電池之製造過財，働设程是何或缺的必程，侧 成乾絲刻及濕式_二類；其中，濕式關係憑藉液態化學 印和固態基板之_化學反應，而雜顧表面上㈣之方法，也是最快 ，最具成本效益时法，已廣輕界使用，諸如：氧化狀去除晶圓磨 削後的應力消除、晶圓減薄以及表面粗化等等。 濕式姓刻又可區分成單_刻及雙祕刻二種。其中，傳統的單聽 刻方式，通常先執行-保護膜塗佈製程，亦即在基板之單一表面塗佈光阻 劑或者黏貼抗侧之賴膜，再進行基板另_表_濕推難程之後 再執行去除保護膜之製程。換言之，傳統為達單面侧之目的，必需要執 /于至乂 一道1程’而無法以單—製程完成單面抛彳之目的，況且在去除保 護膜之過程亦常誤損基板，因而增加製造成本及其製造工.… η為此，另有業者發展出如第13圖所示之單面侧裝置2〇，如圖所示·· 該單面侧裝置20包括有：一液槽21，其係用以容置大量之姓刻液；複數 3 M422745 個輪送滾筒23，其係精準定位而架設於該液槽23内，且各輸送滾筒23係 接觸該液槽21内之侧液，致使該等輸送滾筒23在傳輸—晶圓25時該 •曰曰曰® 25之下表面251可以經由該»送滾筒23而接觸雜職，藉以達 到单面姓刻之目的。 " 換言之，其係藉由調整液槽21内所容置姓刻液之液面高度，使得触刻 液可以臨近該晶圓25之下表面251，而達到晶圓25單面钱刻之效果。當然， 若能精準控制液槽21内钮刻液之液面高度，祁使餘刻液可以順利直接接觸 - 到曰曰圓之下表面251，則晶圓25之钱刻效果必能達到生產之要求。 _ 然而，前述讓晶圓25直接接觸侧液方式乃是理論說法，因為在實際 實施時，為了傳輸晶圓25通過液槽21，該等輸送滾筒23必須在液槽21内 持續進行機械式雜，由_力作舰韻舰之液平面必定呈現擾動之 波浪態樣，而無法確實穩定地控制在一個固定之液平面。又，晶圓之厚 度很薄而通常只有180±20um，因此飯刻液之液平面稱略突起，侧液便浸 溢至該傳送令之晶圓25的上表面253,而無法達成晶圓25單面侧之需求。 又，在侧f程的化學反應過程中，將自然產生氣泡及化學生成物。 其中’氣泡會群聚在液槽21之液平面上無法適時排除，尤其是在輸送滾筒 23突出於钱刻液面的附近，更有機會隨著輸送滾筒23而沾附到晶圓四之 ♦ 下表面251，由於氣泡是阻礙晶圓25與飯刻液接觸之屏障，因而直接影響 ' 晶® 25之侧效果；再加上若氣泡爆破時，部分姓刻液會飛漉至晶圓25 •之上表面253，將於晶圓25之上表面253形絲刻痕(Eaching 也將 影響晶圓25之蝕刻品質。 又，隨著晶圓25連續地傳輸通過液槽21進行姓刻製程，其化學生成 物將累積於液槽21内，因而改變了姓刻液之濃度，進而影響姓刻效果。當 然，使用者可以再補充注入侧液以維持該液槽21内之姓刻液濃度但: 在實際實施上，該立體之液槽21内所容置的敍刻液體積非常魔大^雖可依 自然擴散之方式達雜職濃度均勻之目的，但自麵散仍需耗費相當之 4 M422745 2==接_液之置鱗低，若__❹增加敍刻 液之庄人4方絲舰置_，败 =之方式，樹嫌平面_ 曰，換5之，習用之單面敲刻裝置20有其使用上之限制。、 / 為^ ’㈣輯上《知單_職置畴在之缺料行研發改良， 降低生麵本，增進其絲使用功效，實為侧祕所需努力研發 【新型内容】 表面til上ί先前技術中未符使用需求之處，本創作提供了—種基板 主要係包括有：複數個輸送滾筒，彻滾筒係分別間 Γ塗肺，各塗佈11齡職置於麵紅觀滾筒之間， 至少一出液σ，而可_刻液；其中，該等塗佈器之頂端 係低於該等輸送滾筒之頂端，以利該等輪送滾筒可傳送至少一基板，且各 基板之下表面可接觸塗佈器湧出之姓刻液。 土 另，本創作提供了一種基板表面處理裝置，其主要係包括有·複數個 輸送«’該等觀滾肢職設有概俩㈣緣， 別間隔㈣㈣、-咖，綱繼顺辑職之輸= 之間’且各塗魅設有至少—歧口 ’而可糾綱液且該出液口係可 選擇為線狀、孔狀及其組合之其中一種態樣者；射，該等塗佈器之頂端 係低於該等環狀凸緣之頂端，以利該等輸送滾筒可經由環狀凸緣傳送至少 一基板，且各基板之下表面可接觸塗佈器湧出之蝕刻液。 本創作之主要目的在於提供一種基板表面處理裝置，將塗伟器分別役 置於各輸送滾筒之間，而可對基板持續提供濃度均勾之侧液，進而可有 效提昇钱刻效率及品質。 本創作之次要目的在於提供—種基板表面處理裝置，將塗佈器分別設 5 M422745 I » 2各輸送滾筒之間，且各塗佈縣可分別與—吸取器相組配以吸取自 如之勤m，而可有效控出之_液高度，更可增加侧液 相對基板之流速，進而可提升蝕刻效率。 本創作之又-目的在於提供一種基板表面處理裝置，於各輸送滚筒之 間配置有塗絲，可自塗佈㈣恤職崎觸基板之下表面，並雜刻 生成物及氣歸離基板，以有效提賴刻品質。 2作之又—目的在於提供—種基板表面處理裝置，將塗佈器係鄰設 :、，應之輸达滾筒，而與其形成—積液空間，以匯積_液，而有助基 板接觸蝕刻液，進而有效提升蝕刻效率。 【實施方式】 首先’請參間第1圖，其係為本創作一種基板表面處理裝置之示聋圖， ^圖所^基板表面處理裝置10其主要係包括有：複數個輸送滚筒u，各 说滾筒11係分別間隔排列；及一塗佈器13，塗佈器13係設置於其對庶 =送滾筒U之間，且塗佈器13設有至少—出液口（如第2A划之I 33 =) ’而可消出侧液；其中，該塗佈器13之頂端135係低於該等輪 也疴1之頂端1U，以利該等輸送滾筒u可傳送至少一基板⑻，且各 基板101之下表面103可接觸塗佈器13湧出之蝕刻液。 2該_ 13之寬度敍於基板1Q1之寬度，而在該等輸送滚筒u 傳达基板101越過塗佈器13時，絲板1〇1之下表面1〇3對應塗佈器13 =立置能接觸_ 13加樓懷，而以掃财式令基板m自前端至 如循序沾_刻液，進而達到基板⑻之整體下表面⑽_之目的。 又，制者得依sa設置複數塗佈器13，並較魅13分別設置於 j送滾筒u之間，進而讓基板101之下表面⑽能多次沾附侧液以 加強蝕刻效果。 當然，該基板表面處理裝置1Q設有—承漏盤15，且該承漏盤15係安 6 M422745M422745 V. New description: [New technology field] More sustainable supply This book is about a kind of substrate processing device, especially the bubble that can only be effectively eliminated to improve the quality of the device. The etching efficiency is effectively controlled by an inhomogeneous meal engraving. [Prior technology] The future = ^ is slightly exhausted, the global crude oil price continues to rise, coupled with the high consciousness of Mei, the future depends on human dependence on energy, and the purpose of caring for the earth, resulting in the development of the world ° _ The conductor's editorial, although the technical level of the solar moon battery industry or the entry threshold of funds is not high, but the tearing too = pool manufacturing county _ high. In the field, how to reduce the manufacturing of renewable batteries to meet the needs of the public, is one of the important topics in the development of solar cells. ^The production of solar cells has been over-the-counter, and the process of setting up or lacking is necessary. The side is dry-lined and wet-typed. Among them, the wet relationship relies on the chemical reaction of liquid chemical printing and solid substrate. The method of (4) on the surface is also the fastest and most cost-effective method. It has been used in a wide range of applications, such as oxidation to remove stress relief after wafer grinding, wafer thinning and surface roughening. The wet type of engraving can be divided into two types: single _ engraving and double secret engraving. Among them, the traditional single-audio engraving method usually first performs a protective film coating process, that is, coating a photoresist on a single surface of the substrate or adhering the anti-side film, and then performing the substrate on the other surface. The process of removing the protective film is then performed. In other words, the traditional purpose of achieving a single-sided side is that it is necessary to perform a one-way process and cannot perform the one-side throwing process in a single-process. Moreover, the substrate is often damaged during the process of removing the protective film. Increasing the manufacturing cost and its manufacturing work.... η For this reason, another manufacturer has developed a single-sided side device 2〇 as shown in Fig. 13, as shown in the figure... The single-sided side device 20 includes: a liquid tank 21, which is used for accommodating a large number of surnames; a plurality of 3 M422745 wheel rollers 23 are accurately positioned and mounted in the liquid tank 23, and each of the transport rollers 23 is in contact with the side of the liquid tank 21 The liquid, such that the transport roller 23, when transporting the wafer 25, the lower surface 251 of the 曰曰曰® 25 can contact the miscellaneous job via the »feed roller 23, thereby achieving the purpose of one-sided surname. " In other words, by adjusting the liquid level of the surname liquid contained in the liquid tank 21, the contact liquid can be adjacent to the lower surface 251 of the wafer 25, thereby achieving the effect of the wafer 25 single-sided engraving . Of course, if the liquid level of the button engraving liquid in the liquid tank 21 can be precisely controlled, so that the residual liquid can be directly and smoothly contacted - to the lower surface 251 of the round, the effect of the wafer 25 can meet the production requirements. . _ However, the above-mentioned method of directly contacting the wafer 25 with the side liquid is theoretical, because in the actual implementation, in order to transport the wafer 25 through the liquid tank 21, the transport rollers 23 must continue to be mechanically mixed in the liquid tank 21. The liquid level of the ship by the _ force of the ship must exhibit a disturbing wave pattern, and cannot be stably controlled in a fixed liquid level. Moreover, the thickness of the wafer is very thin and usually only 180±20 um, so the liquid level of the rice grater is slightly raised, and the side liquid is immersed to the upper surface 253 of the wafer 25 of the transfer order, and the wafer 25 cannot be achieved. Single-sided side demand. In addition, bubbles and chemical products are naturally generated during the chemical reaction of the side f process. Wherein, the bubbles will not be properly removed in the liquid level of the liquid tank 21, especially when the transport roller 23 protrudes in the vicinity of the liquid surface, and there is a chance to adhere to the wafer 4 along with the transport roller 23. The lower surface 251, because the bubble is a barrier that hinders the contact of the wafer 25 with the rice etchant, thus directly affecting the side effect of the 'crystal® 25; plus if the bubble blasts, some of the surname will fly to the wafer 25 • The upper surface 253 will have a surface 253 wire score on the upper surface of the wafer 25 (Eaching will also affect the etching quality of the wafer 25. Further, as the wafer 25 is continuously transported through the liquid bath 21 for the surname process, The chemical product will accumulate in the liquid tank 21, thus changing the concentration of the surname engraving, thereby affecting the effect of the surname. Of course, the user can replenish the injection side liquid to maintain the engraving concentration in the liquid tank 21 but: In practical implementation, the volume of the engraving liquid contained in the three-dimensional liquid tank 21 is very large. Although it can be uniformly diffused according to the method of natural diffusion, it still costs a considerable amount of 4 M422745. 2== _ _ liquid set the scale is low, if __ ❹ increase the engraving Zhuang people 4 square silk ship set _, defeat = the way, the tree is suspected of plane _ 曰, for 5, the conventional single-sided squeezing device 20 has its use restrictions. / / ^ ^ (4) on the "Knowledge _ Position domain in the lack of material development and improvement, reduce the raw noodles, improve the use of its silk, it is necessary to develop the side secrets [new content] surface til on the previous technology does not meet the needs of use, this The creation provides a kind of substrate mainly including: a plurality of conveying rollers, each of which is coated with lungs, and each 11-year-old is placed between the red-faced rollers, at least one liquid σ, and can be engraved a liquid; wherein the tops of the applicators are lower than the top ends of the transport rollers, so that the transfer rollers can transport at least one substrate, and the lower surface of each substrate can contact the applicator In addition, this creation provides a substrate surface treatment device, which mainly includes a plurality of conveyances «'there are two (4) edges, and the interval between (four) (four), -ca, and ji shun The loss = between the 'and each paint charm has at least - the mouth' and the liquid can be calibrated and the liquid The system can be selected as one of a line shape, a hole shape and a combination thereof; the top ends of the applicators are lower than the top ends of the annular flanges, so that the conveying rollers can be looped The flange conveys at least one substrate, and the lower surface of each substrate can contact the etching liquid which is ejected from the applicator. The main purpose of the present invention is to provide a substrate surface treatment device, wherein the coating device is separately placed between the conveying rollers. The substrate can continue to provide the side liquid with the concentration of the hook, which can effectively improve the efficiency and quality of the money. The second purpose of the creation is to provide a substrate surface treatment device, and the applicator is respectively set to 5 M422745 I » 2 Between the conveying rollers, and each coating county can be combined with the suction device to absorb the free working m, and the liquid height can be effectively controlled, and the flow rate of the side liquid relative to the substrate can be increased, thereby improving the etching. effectiveness. The purpose of the present invention is to provide a substrate surface treatment device, in which a coating wire is disposed between each of the conveying rollers, and the surface of the substrate can be self-coated (four), and the product and the gas are separated from the substrate. To effectively enhance the quality of engraving. 2 is also done - the purpose is to provide a substrate surface treatment device, the applicator is adjacent to:, should be transported to the roller, and form a effusion space to consolidate the liquid, and help the substrate to contact Etching liquid, which effectively improves the etching efficiency. [Embodiment] First, please refer to FIG. 1 , which is a schematic diagram of a substrate surface treatment device. The substrate surface treatment device 10 mainly includes a plurality of conveying rollers u, each of which It is said that the rollers 11 are arranged at intervals; and an applicator 13, the applicator 13 is disposed between the pair of 庶=feeding rollers U, and the applicator 13 is provided with at least a liquid outlet (such as the second AA) I 33 =) 'and the side liquid can be eliminated; wherein the top end 135 of the applicator 13 is lower than the top end 1U of the same wheel, so that the transport roller u can transport at least one substrate (8), and The lower surface 103 of each substrate 101 can contact the etching liquid that is ejected from the applicator 13. 2 The width of the _ 13 is described as the width of the substrate 1Q1, and when the transport roller u conveys the substrate 101 over the applicator 13, the lower surface 1 〇 3 of the silk plate 1 对应 corresponds to the applicator 13 = upright It can contact _ 13 plus floor, and the sweeping type makes the substrate m from the front end to the immersion immersion, and then achieves the overall lower surface (10) of the substrate (8). Further, the maker has to set the plurality of applicators 13 in accordance with sa, and is disposed between the j-feeding rollers u, respectively, so that the lower surface (10) of the substrate 101 can be adhered to the side liquid multiple times to enhance the etching effect. Of course, the substrate surface treatment device 1Q is provided with a leakage-receiving disk 15, and the leakage-receiving disk 15 is a 6 M422745
t I 1G 方’何承接由鱗塗佈1113之出液口 (=2^C圖之131、133所示)觸出之侧液。又，基板表面處理裝置 V匕供液裝置14其係設有—栗浦141，而可沒取該承漏盤巧内之钮 刻液，並經由一過遽器143之作用後，再職刻液供給至該塗佈器13。如 ^不僅可經由塗佈H 13對基板1Q1持續提供濃度均勻之侧液 ，而有效 什S效。更可藉由,勇出之钱刻液帶離姓刻過程所產生之氣泡或侧 生成物，進而改善蝕刻品質。t I 1G square 'he accepts the side liquid which is touched by the liquid outlet of the scale coating 1113 (shown as 131, 133 of Fig. 2). Moreover, the substrate surface treatment device V匕 liquid supply device 14 is provided with a Lipu 141, and the button engraving liquid in the leak-proof disk is not taken, and after a function of the filter 143, the re-engagement is performed. The liquid is supplied to the applicator 13. For example, not only can the side liquid of uniform concentration be continuously supplied to the substrate 1Q1 via the coating of H 13 , but it is effective. It is also possible to improve the etching quality by using the money engraving liquid to remove the bubbles or side products generated by the process of surname.
再者’各個塗佈器13之出液σ⑽、133)其外形係可為線狀之態樣(如 第2Α圖所示）、孔狀之態樣(如第2Β圖）或線狀及孔狀之組合態樣(如第2c 圖所示）。藉此可配合侧液流量之控制，以令塗佈器13能穩定且均句地 诱出姓刻液。當然’各塗佈器13配置有—節流器17，藉以進一步地調整控 制塗佈器13之利量，以避免管線配置之壓損，而對塗佈器13 度造成影冑。 ★接貝β參閱第3圖’其係為本創作另一實施例中塗佈器相對輸送滚 筒之位置示意圖；如圖所示：各塗佈器33係分別設置於該等輸送滾筒& 之，，藉由適當調整塗佈器33相對輸送滾筒31之高度差，或適當控制塗 佈器33之漠出量，而可令該等輸送滚筒31所輸送之基板1〇1可以直接接 ^ 觸餘刻液。 ’ 又，請參閱第4圖，其係林創作又-實關巾塗佈器相對輸送滾筒 ' 之位置示意圖；如圖所示：各塗佈器43係鄰設於對應之輸送滾筒4卜且改 變塗佈器43之角度或位置高度，以使輸送滾筒41可沾附由塗佈器犯所湧 出之蝕刻液，使得基板1〇1經由該等輸送滚筒41而間接接觸蝕刻液。 又，請參閱第5 «，其係為本創作又-實施例中塗佈器相對輪送滚筒 之位置示意圖；如圖所示：該塗佈器53係鄰設於對應之輸送滾筒51，且二 者相互組配而形成一積液空間54，進而可匯積蝕刻液。由於輸送滾筒5丨盥 塗佈器53彼此之間尚有組配間隙，致使蝕刻液不僅可由積液空間％湧出， 7 M422745Furthermore, the shapes of the liquids σ(10) and 133 of the respective applicators 13 may be linear (as shown in Fig. 2), or the shape of the holes (e.g., Fig. 2) or lines and holes. The combination of shapes (as shown in Figure 2c). Thereby, the control of the side liquid flow can be matched to enable the applicator 13 to stably and uniformly induce the surname. Of course, each of the applicators 13 is provided with a throttle 17 to further adjust the amount of control of the applicator 13 to avoid pressure loss in the line configuration and to affect the applicator 13 degrees. ★接贝β Refer to FIG. 3, which is a schematic view of the position of the applicator relative to the transport roller in another embodiment of the present invention; as shown in the figure: each applicator 33 is respectively disposed in the transport rollers & By appropriately adjusting the height difference of the applicator 33 with respect to the transport roller 31, or appropriately controlling the amount of discarding of the applicator 33, the substrate 1〇1 conveyed by the transport rollers 31 can be directly touched. Remnant fluid. ' Also, please refer to Fig. 4, which is a schematic view of the position of the lining creation and the real towel applicator relative to the conveying roller'; as shown in the figure: each applicator 43 is adjacent to the corresponding conveying roller 4 The angle or positional height of the applicator 43 is changed so that the conveying roller 41 can adhere to the etching liquid rushed by the applicator, so that the substrate 1〇 indirectly contacts the etching liquid via the conveying rollers 41. In addition, please refer to the fifth «, which is a schematic view of the position of the applicator relative to the roller of the drum in the embodiment of the present invention; as shown in the figure: the applicator 53 is adjacent to the corresponding conveying roller 51, and The two are combined to form a effusion space 54, which in turn can collect the etchant. Since the conveying rollers 5 涂布 the applicator 53 still have a matching gap with each other, the etching liquid can be ejected not only by the effusion space, 7 M422745
I 亦少量地由組配間隙流逝，然其流逝量相對積液空間54之湧出量尚屬輕 微，又，亦可於塗佈器53之兩側邊分別設置一擋板(如第14圖所示之533) 而形成單一向上開口之積液空間54，以減少其流逝量而增加其積液能力。 、 如此，基板不僅可直接接觸自積液空間54溢流出之蝕刻液，且蝕刻液 • 更可透過輸送滾筒51而間接接觸基板101 ’藉以增加基板101接觸蝕刻液 之機會’進而有效提升钱刻效率。 • 請參閱第6 ®，其係為本創作又-實施财設塗佈器相對輸送滾筒之 位置示意圖；如圖所示：其主要係與第3圖相同，唯，該等塗佈器63分別 對應有一吸取器63卜以吸取自該塗佈器63所消出之飯刻液，藉此，使用 者可增加塗佈H 63之;勇出量，再透過吸取器631之調節，而不僅可有效控 制塗佈器63湧出蝕刻液之高度，更可增加蝕刻液相對基板1〇1之流速，進 而可提升姓刻效率。而該吸取器631之高度係略低於該等輸送滾筒61，以 利輸送滚筒傳送基板101。 。月參閱第7圖’其係為本創作又—實施例巾設有吸取器之塗佈器相對 輸达滚筒之位置示意圖；如圖所示：其主要係與第5圖相同，唯，該積液 空間74係由塗佈器73與其對應之吸取器731及輸送滾筒71所共同組配而 成，而可藉由該吸取g 731之作用而調節該積液空μ 74匯積钮刻液之能力 •及該積液空間74内侧液之置換率，以利侧液可直接接觸基板m之下 ' 表面103。 田然使用者亦可改變輸送滾筒γΐ相對塗佈器Μ或吸取器π〗之相 十位置以令基板1〇1經由輸送滾筒71 *間接接觸積液空間Μ所流出之 姓刻液；亦即輸送滾筒71相對塗佈器73之位置係如第4圖所示之態樣， 唯，該塗佈器73係再與組配該吸取器731。 ^卜⑼參閱第8圖，其係為本創作又__實施例巾設有環狀凸緣之輸 送滚筒，對塗佈器之位置示意圖；如圖所示：該等輸送滾筒幻分別突設有 複數個％狀凸緣81卜而該輸送滾筒81係可運用於如第i圖所示之基板表 8 M422745 面處理裝置ίο，且各構件之組配關係均與第丨圖對應之說明描述相同，在 此不再贅述。唯，該塗佈器83之頂端835係低於該等環狀凸緣811之頂端 813’而有一高度差Η ’以利該等輪送滾筒81可經由環狀凸緣811傳送至少 一基板101，且各基板101之下表面103可接觸塗佈器83湧出蝕刻液。 又，使用者得依需求而設置複數塗佈器83，並將塗佈器83分別設置於 各輸送滾筒81之間’進而讓基板i(u之下表面1〇3能多次沾附钱刻液，以 加強姓刻效果。 當然’使用者亦可改變塗佈器（43)相對輸送滾筒81之相對位置，而如 第4圖所示之態樣，以使基板101可經由該等環狀凸緣8ιι而接職刻液。 雖基板皿與環狀凸緣811係呈點接觸之態樣，然，由於侧液在接觸基 板101後，藉由關液之表面張力_，使靠刻液得在基板1〇 ^ 面103蔓延。 衣 /又，請參Μ 9圖’其麵本創作又—實施例中輸送滾狀有複數個 核狀凸緣之不意圖；如圖所示，該等環狀凸緣911係以二個為一組之方 而設置於該輸送滾筒91，且於兩兩環狀凸緣911之間形成一沒液空間叫, =使纖㈣議咖請細蝴914，爾接廳刻 佈盗之位置不意圖；如圖所示：其主要係與第5圆相同，唯， =ί1585 = 复數個環狀凸緣851，且該塗佈器87係鄰近於其對紅輸 積朗r 輪达滾筒85或環狀凸緣851共同形成積液空間84，以匯 Γ晴佈1187職獅緣851之_有-凹样 873以減少塗佈器87與輸送滾筒85及環 : 助於積液空卩之_力。同時，柯==進而有 邊分別設置触⑽14騎稍請與編5==7之兩側 送滾筒85或環妝„ 玉㈣⑴組配之祕）而與輸 U狀凸_形成單-向上開口之積液空間似，以減少其流逝 9 M422745I also passes through the assembly gap in a small amount, but the amount of elapsed relative to the effusion space 54 is still slight, and a baffle may be separately disposed on both sides of the applicator 53 (as shown in Fig. 14). Shown 533) and form a single upwardly open effusion space 54 to reduce its lapse amount and increase its liquid accumulation capacity. In this way, the substrate can not only directly contact the etchant overflowing from the effusion space 54, but also the etchant can indirectly contact the substrate 101 through the transport roller 51 to increase the chance of the substrate 101 contacting the etchant. effectiveness. • Please refer to Section 6®, which is a schematic diagram of the position of the production applicator relative to the transport roller; as shown in the figure: it is mainly the same as Figure 3, except that the applicators 63 respectively Corresponding to a suction device 63 to absorb the meal engraving liquid removed from the applicator 63, whereby the user can increase the application of H 63; the amount of bravery, and then through the adjustment of the suction device 631, and not only The height of the etching solution is effectively controlled by the applicator 63, and the flow rate of the etching liquid relative to the substrate 1〇1 is further increased, thereby improving the efficiency of the surname. The height of the suction 631 is slightly lower than that of the transport rollers 61, so that the transport roller transports the substrate 101. . Refer to Figure 7 for the month of the present invention, which is a schematic diagram of the position of the applicator with the suction device relative to the delivery roller; as shown in the figure: it is mainly the same as Figure 5, except that the product The liquid space 74 is formed by the applicator 73 and its corresponding suction device 731 and the conveying roller 71, and the liquid vacancy μ 74 confluence button engraving can be adjusted by the action of the suction g 731. Capability and the replacement rate of the inner liquid of the effusion space 74, so that the side liquid can directly contact the surface 103 below the substrate m. The user of Tian Ran can also change the position of the conveying roller γ ΐ relative to the applicator 吸 or the suction π 〗 〖 to make the substrate 1 〇 1 indirectly contact the surging liquid flowing out of the effusion space via the conveying roller 71 *; The position of the transport roller 71 with respect to the applicator 73 is as shown in Fig. 4, but the applicator 73 is further combined with the aspirator 731. ^卜(9) Refer to Figure 8, which is a schematic diagram of the position of the applicator with the conveying roller of the annular towel on the creation and the embodiment towel; as shown in the figure: the conveying rollers are separately arranged There are a plurality of %-shaped flanges 81, and the transporting roller 81 can be applied to the substrate table 8 M422745 surface treating device ίο as shown in the figure i, and the composition relationship of each member is described corresponding to the first drawing. The same, no longer repeat here. The top end 835 of the applicator 83 is lower than the top end 813' of the annular flange 811 and has a height difference Η 'to facilitate the transfer of the at least one substrate 101 via the annular flange 811. And the lower surface 103 of each substrate 101 can contact the applicator 83 to rush out the etching liquid. Further, the user can set the plurality of applicators 83 according to the requirements, and the applicator 83 is disposed between the respective transport rollers 81 to further allow the substrate i (the surface of the lower surface of the u to be rubbed multiple times) Liquid to enhance the effect of surname. Of course, the user can also change the relative position of the applicator (43) relative to the transport roller 81, as shown in Fig. 4, so that the substrate 101 can pass through the ring. The flange 8 is connected to the engraving liquid. Although the substrate plate and the annular flange 811 are in point contact manner, since the side liquid contacts the substrate 101, the surface tension _ is used to close the liquid It has to be spread on the substrate 1 面 surface 103. Clothing / again, please refer to the 图 图 图 其 其 其 其 其 其 其 其 其 其 其 其 其 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 ; ; ; ; ; ; The annular flange 911 is disposed on the transport roller 91 in a group of two, and forms a liquid-free space between the two annular flanges 911, and makes the fiber (four) The location of the plaque is not intended; as shown in the figure: it is mainly the same as the 5th circle, only =ί1585 = a plurality of annular flanges 851, and the coating The device 87 is adjacent to the red-distribution rim r roller 85 or the annular flange 851 to form a effusion space 84, so as to reduce the coating of the 1187 lion 851 _ _ _ _ 873 The air pump 87 and the transport roller 85 and the ring: help the effusion empty _ force. At the same time, Ke == and then the side set contact (10) 14 ride slightly and the 5 == 7 on both sides of the roller 85 or ring makeup „ Jade (four) (1) combined with the secret) and the U-shaped convex _ forming a single-upward opening of the effusion space to reduce its passage 9 M422745
I 量而增加其積液能力。另外 ㈣相組配，而如第U圖所=可加設吸取器87 最後，請參閱第12圖，复係太制ip ^ 對塗絲植置_ ;如_^^—實關讀跋騎列方式相 斤不.該等輸送滾筒95係以逐漸升高之方式 = 中，灿1相糊㈣之二二 二=τ刻液攀附至基板101之上表面⑽，而造成非 ㈣、731 :二 塗佈器（63、73、87)及與其相組配之吸取器 „ …"，體成型，而有利於與其他構件之組配作苹。且哕等 %狀凸緣（811、85卜911)俜可我π · 某且該等 以„ 观。該基板1Q1係可為矽晶圓。 斤4僅為本創作較佳實施例，並非用以限 利；同時以上的贿對於相關技術領域具有通常知識者應可明睁:= ^此其他未^離摘作所揭示之精神下所完成料效改賊料，均岸包 含於下述之申請專利範圍。 心 【圖式簡單說明】 第1圖係為本創作實施例之基板表面處理裝置之示意圖。 • 帛2A圖帛2B圖及第2G ®係分別為本創作實施繼佈器之不同態樣 出液口之示意圖。 〜 . 帛3圖係為本創作另-實施例中塗佈器相對輸送滾筒之位置示音圖。 第4圖係為本創作又-實施例中塗佈器相對輸送滾筒之位置示:圖。 第5圖係為本創作又-實施例中塗佈器相對輪送滾筒之位置示^圖。 第6圖係為本創作又—實施财設有吸取器之塗佈器相簡送滚筒之 位置示意圖。 第7圖係為本創作又一實施例中設有吸取器之塗佈器相對輪送滾筒之 位置示意圖。 ~ 第8 _為本!彳作實細巾設有職凸緣之輸送㈣相對塗佈器I increase the ability of fluid accumulation. In addition, (4) phase combination, and as shown in Figure U = suction absorber 87 can be added. Finally, please refer to Figure 12, the system is too ip ^ for silk coating _; such as _^^- The column mode is different. The conveying rollers 95 are gradually raised. The middle and the second phase of the paste (4) 222 = τ engraved to the upper surface (10) of the substrate 101, resulting in non-(four), 731: The second applicator (63, 73, 87) and the suction device „ ..." which are combined with it, are formed in a body shape, and are advantageous for the combination with other members, and the %-like flanges (811, 85) 911) 俜可我π · Something and so on. The substrate 1Q1 can be a germanium wafer.斤4 is only a preferred embodiment of the present invention, and is not intended to be used for limitation; at the same time, the above bribe should have a clear knowledge of the relevant technical field: = ^ This is not done in the spirit revealed by the abstract The material efficiency is changed to the thief material, and the average bank is included in the following patent application scope. [Simplified illustration of the drawings] Fig. 1 is a schematic view showing a substrate surface treatment apparatus according to the present embodiment. • 帛2AFig. 2B and 2G® are the schematic diagrams of the different outlets of the fabric. ~ . . . Figure 3 is a positional view of the position of the applicator relative to the transport roller in the other embodiment. Figure 4 is a diagram showing the position of the applicator relative to the transport roller in the present and further embodiments: Figure. Fig. 5 is a view showing the position of the applicator relative to the roller of the present invention in the present invention. Figure 6 is a schematic diagram of the position of the applicator phase-sending roller of the creation and implementation of the suction device. Fig. 7 is a view showing the position of the applicator provided with the suction device relative to the roller of the drum in still another embodiment of the present invention. ~ 8th _本! 彳 细 细 设有 设有 设有 设有 设有 设有 设有 设有 设有 设有 ( ( (
M422745 > I 54 積液空間 835 頂端 61 輸送滾筒 84 積液空間 63 塗佈器 85 輸送滚筒 631 吸取器 851 環狀凸緣 71 輸送滾筒 87 塗佈器 73 塗佈器 871 吸取器 731 吸取器 873 凹槽 74 積液空間 91 輸送滾筒 81 輸送滾筒 911 環狀凸緣 811 環狀凸緣 914 汲液空間 813 頂端 95 輸送滾筒 83 塗佈器 97 塗佈器 12M422745 > I 54 effusion space 835 top 61 transport roller 84 effusion space 63 applicator 85 transport roller 631 suction 851 annular flange 71 transport roller 87 applicator 73 applicator 871 suction 731 suction 873 Groove 74 effusion space 91 transport roller 81 transport roller 911 annular flange 811 annular flange 914 sputum space 813 top 95 transport roller 83 applicator 97 applicator 12