TWM421634U - Solid-state laser amplifier - Google Patents

Solid-state laser amplifier Download PDF

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Publication number
TWM421634U
TWM421634U TW100216648U TW100216648U TWM421634U TW M421634 U TWM421634 U TW M421634U TW 100216648 U TW100216648 U TW 100216648U TW 100216648 U TW100216648 U TW 100216648U TW M421634 U TWM421634 U TW M421634U
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Taiwan
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solid
state laser
excitation
laser crystal
light source
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TW100216648U
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Chinese (zh)
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hui-qing Lin
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Dar Harnq Industry Co Ltd
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Priority to TW100216648U priority Critical patent/TWM421634U/en
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M421634 五、新型說明: 【新型所屬之技術領域】 本新型是有關於一種雷射’特別是指一種固態雷射放 大器。 【先前技術】 在每射加工應用上需要一種南重複頻率(repet.iti〇I1 rate )以及咼輸出功率(output power ),以往選用的固態雷射晶 體多為Nd: YAG,由於螢光壽命較長’重複頻率僅能達到 50kHz左右,因此加工速度受限。 此外,關於咼輸出功率,以往的一種固態雷射可以分 為端面激發(end-pumping)與側邊激發(side_puinping)兩 種。若為端面激發是由固態雷射晶體的兩個端面導入激發 光源,此種激發方式容易產生模態為基模TEM〇〇的雷射出 光,適合使用於加工應用,但由於固態雷射晶體的端面面 積小’因此限制了激發光源的強度與雷射出光功率,此外 端面激發的光路校準需要將激發光源調校在固態雷射晶體 的光軸上,整體光路校準難度高,坊間有些固態雷射放大 器是採用多個端面激發雷射模組串連,所能提高的功率有 限,且光路校準難度更高。 而若為侧邊激發,側邊激發是指由固態雷射晶體的側 邊輸入激發光源,由於側邊面積較大容易獲得較強的激發 光源,達到高輸出功率,但是雷射的出光模態為多模( multi-mode),模態不佳,無法使用於加工應用,還需再透 過光學修正將模態修正為基模TEM。。。 3 因此,一種可以提供高輪出功率且模態為基模TEMM 的固態雷射放大器,為目前相關業者的研發目標之一。 【新型内容】 因此,本新型之目的,即在提供一種可以提供高輸出 功率且模態為TEM00的固態雷射放大器。 於疋本新型固態雷射放大器包含一端面激發共振模 組,及一側邊激發放大模組,該端面激發共振模組包括一 共振腔、一位於該共振腔中的第一固態雷射晶體、一位於 該共振腔中的脈衝雷射控制器,及至少一將雷射光輸入該 第一固態雷射晶體端面的端面激發光源,該第一固態雷射 曰曰體為Nd. YVO4固態雷射晶體,該侧邊激發放大模組包括 一殼體、一設置於該殼體且接收來自該端面激發共振模組 雷射光的入光部、一與該入光部相反設置的出光部、一位 於》玄忒體中的第二固態雷射晶體,及複數組將雷射光輸入 5亥第一固態雷射晶體側邊的側邊激發光源組,該第二固態 雷射晶體為Nd: YV04固態雷射晶體。 本新型選用Nd:YV〇4固態雷射晶體可以達到約2〇〇kHz 的重複頻率,而透過該端面激發共振模組產生基模TEM〇0 的田射出光,以誘發該側邊激發放大模組同樣產生基模 TEM00的雷射出光,而利用該等側邊激發光源組達到高輸出 功率的雷射輸出。 【實施方式】 有關本新型之前述及其他技術内容、特點與功效,在 以下配合參考圖式之較佳實施例的詳細說明中,將可清楚 的呈現。 參閱圖1與圖2, 本新型固態雷射放大器的第一較佳實M421634 V. New description: [New technical field] The new type relates to a kind of laser, especially a solid-state laser amplifier. [Prior Art] A repeteration rate (repet.iti〇I1 rate) and an output power are required for each shot processing application. Most of the solid-state laser crystals used in the past are Nd:YAG, because the fluorescence lifetime is higher. The long 'repetition frequency can only reach about 50 kHz, so the processing speed is limited. In addition, with regard to the output power of the crucible, a conventional solid-state laser can be classified into end-pumping and side-pusting. If the end face excitation is introduced from the two end faces of the solid-state laser crystal, the excitation mode is easy to generate the laser light with the mode of the fundamental mode TEM〇〇, which is suitable for processing applications, but due to the solid-state laser crystal The small end face area' therefore limits the intensity of the excitation source and the laser output power. In addition, the optical path calibration of the end face excitation requires the excitation source to be calibrated on the optical axis of the solid-state laser crystal. The overall optical path calibration is difficult, and some solid-state lasers are used. The amplifier uses a series of end-excited laser modules in series, which can increase the power and make the optical path calibration more difficult. If the side is excited, the side excitation refers to the input of the excitation light source from the side of the solid-state laser crystal. Because of the large side area, it is easy to obtain a strong excitation light source to achieve high output power, but the laser exit mode. For multi-mode, the modality is not good, it can not be used in processing applications, and the modality needs to be corrected to the fundamental mode TEM through optical correction. . . 3 Therefore, a solid-state laser amplifier that can provide high turn-off power and a modality of the fundamental mode TEMM is one of the research and development goals of the current industry. [New content] Therefore, the purpose of the present invention is to provide a solid-state laser amplifier that can provide high output power and a mode of TEM00. The novel solid-state laser amplifier includes an end-excited resonance module and a side excitation amplification module. The end-excited resonance module includes a resonant cavity, a first solid-state laser crystal located in the resonant cavity, a pulsed laser controller located in the resonant cavity, and at least one end-excited light source for inputting laser light into the end face of the first solid-state laser crystal, the first solid-state laser body being a Nd. YVO4 solid-state laser crystal The side excitation amplification module includes a casing, a light incident portion disposed on the casing and receiving the laser light from the end face excitation resonance module, and a light exit portion disposed opposite to the light incident portion, and a a second solid-state laser crystal in the mysterious body, and a complex array of laser light input into the side excitation light source group of the side of the first solid-state laser crystal of 5 Hz, the second solid-state laser crystal is a Nd: YV04 solid-state laser Crystal. The novel uses a Nd:YV〇4 solid-state laser crystal to achieve a repetition frequency of about 2 kHz, and the field-excited resonance module generates a field-emitting TEM 〇0 field emission to induce the side excitation amplification mode. The group also produces a laser output of the fundamental mode TEM00, and the laser output of the high-output power is achieved by the side excitation light source groups. The above and other technical contents, features and effects of the present invention will be apparent from the following detailed description of the preferred embodiments. Referring to Figures 1 and 2, the first preferred embodiment of the novel solid state laser amplifier

源13設置的聚焦透鏡組14,及一 及一界定出該共振腔11的反 射鏡片組15,該脈衝雷射控制器10為Q開關,用於控制該 端面激發共振模組丨產生脈衝雷射,且控制脈衝雷射的重 複頻率。 在本第一較佳實施例中,該第一固態雷射晶體12為 Nd:YV〇4固態雷射晶體,以達到約2〇〇kHz的重複頻率,有 利於提高加工速度,且該第一固態雷射晶體12呈圓柱形, 而5亥^面激發共振模組1包括數量為二的端面激發光源13 與聚焦透鏡組14,該等端面激發光源13分別設置於該第一 固態雷射晶體12兩端面,且該等端面激發光源13為雷射 二極體。 更進一步說明的是,該反射鏡片組15具有—高反射板 151、一部分反射部分穿透的出光板152,及二分別設置於 該等端面激發光源13前的分色光板153,該等分色光板 153可供該等端面激發光源13的波長通過,而對該第一固 5 M421634 態雷射晶體12的波長反射,該等聚焦透鏡組14分別設置 於該等端面激發光源13與分色光板153間,該等端面激發 光源13發出波長奈米的雷_光’透過該聚焦透鏡組μ ♦焦於該苐一固態雷射晶體12兩端面,該第一固態雷射晶 體12兩端面受激發產生波長1064奈米的雷射光,透過該 尚反射板151、出光板152與分色光板153不斷反射增益, 且該脈衝雷射控制器10位於該高反射板151與鄰近該高反 射板151的分色光板153間,以用於產生脈衝雷射,而該 端面激發共振模組1的雷射出光由該出光板152射出進入 該側邊激發放大模組2,且雷射出光的模態為基模τΕΜ〇〇。 該側邊激發放大模組2包括一殼體21、一設置於該殼 體21且接收來自該端面激發共振模組1雷射光的入光部22 、一與該入光部22相反設置的出光部23、一位於該殼體 21中的第二固態雷射晶體24,及複數組將雷射光輸入該第 二固態雷射晶體24側邊的側邊激發光源組25。 在本第一較佳實施例中,該第二固態雷射晶體24也同 樣為Nd: YVO4固態雷射晶體,且該第二固態雷射晶體24呈 圓检形,該側邊激發放大模組2包括數量為三的側邊激發 光源組25,該等侧邊激發光源組25彼此等間隔地環設於該 第一固態雷射晶體24側邊’由於每一組侧邊激發光源組25 又分別具有複數雷射二極體251,因此整體所輸入進入該第 二固態雷射晶體24侧邊的能量高,使該側邊激發放大模組 2有尚輸出功率的雷射輸出。 综上所述,本新型的優點如下所述: 6 M421634 一、透過該第一固態雷射晶體12與該第二固態雷射晶 體24達到約200kHz的重複頻率。 二' 該端面激發共振模組1產生基模TEM00的雷射出 光,以誘發s亥側邊激發放大模組2同樣產生基模TEM〇〇的 雷射出光。 三、利用該侧邊激發放大模組2達到高輸出功率的雷 射輸出》a focusing lens group 14 disposed at the source 13 and a reflecting lens group 15 defining the resonant cavity 11. The pulse laser controller 10 is a Q switch for controlling the end face excitation resonant module to generate a pulsed laser And control the repetition frequency of the pulsed laser. In the first preferred embodiment, the first solid-state laser crystal 12 is a Nd:YV〇4 solid-state laser crystal to achieve a repetition frequency of about 2 kHz, which is advantageous for increasing the processing speed, and the first The solid-state laser crystal 12 has a cylindrical shape, and the 5-electron-excited resonance module 1 includes a number of two end-face excitation light sources 13 and a focusing lens group 14, and the end-face excitation light sources 13 are respectively disposed on the first solid-state laser crystal. 12 end faces, and the end face excitation light sources 13 are laser diodes. It is further explained that the reflecting lens group 15 has a high-reflecting plate 151, a light-emitting plate 152 through which a part of the reflecting portion penetrates, and two color separation plates 153 respectively disposed in front of the end-face excitation light sources 13, and the color separation plates. The light plate 153 can pass the wavelength of the end face excitation light source 13 and reflect the wavelength of the first solid M M 634634 state laser crystal 12, and the focusing lens groups 14 are respectively disposed on the end face excitation light source 13 and the color separation plate. 153, the end face excitation light source 13 emits a wavelength nanometer of Ray_Light' through the focusing lens group μ ♦ is focused on both end faces of the first solid state laser crystal 12, and the first solid state laser crystal 12 is excited at both ends The laser light having a wavelength of 1064 nm is generated, and the gain is continuously reflected through the reflective plate 151, the light-emitting plate 152, and the color separation plate 153, and the pulse laser controller 10 is located on the high-reflection plate 151 and adjacent to the high-reflection plate 151. The color separation plate 153 is used for generating a pulsed laser, and the laser beam emitted from the end face excitation resonance module 1 is emitted from the light exit plate 152 into the side excitation amplification module 2, and the mode of the laser emission is Base model τΕΜ Hey. The side excitation amplification module 2 includes a casing 21, a light incident portion 22 disposed on the casing 21 and receiving laser light from the end surface excitation resonance module 1 , and a light output opposite to the light incident portion 22 . A portion 23, a second solid state laser crystal 24 located in the housing 21, and a complex array of laser light input to the side excitation source group 25 on the side of the second solid state laser crystal 24. In the first preferred embodiment, the second solid-state laser crystal 24 is also a Nd: YVO4 solid-state laser crystal, and the second solid-state laser crystal 24 is in a circular shape, and the side excitation amplification module 2 includes a number of three side excitation light source groups 25 that are equidistantly spaced from each other on the side of the first solid state laser crystal 24 'since each set of side excitation light source groups 25 The plurality of laser diodes 251 are respectively provided, so that the energy input into the side of the second solid-state laser crystal 24 as a whole is high, so that the side excitation amplification module 2 has a laser output with an output power. In summary, the advantages of the present invention are as follows: 6 M421634 1. A repetition frequency of about 200 kHz is achieved by the first solid state laser crystal 12 and the second solid state laser crystal 24. The 'end face excitation resonance module 1 generates the laser light of the fundamental mode TEM00, so as to induce the laser emission of the base mode TEM〇〇 by the excitation side amplification module 2. 3. Using the side excitation amplification module 2 to achieve high output power of the laser output"

惟以上所述者,僅為本新型的較佳實施例而已,當不 能以此限定本新型實施之範圍,即大凡依本新型申請專利 範圍及新型說明内容所作簡單的等效變化與修飾皆仍屬 本新型專利涵蓋範圍内。 【圖式簡單說明】 圖1是示意圖,說明本新型固態雷射放大器的第 佳實施例;及 Κ 放大模組 =2是不意圖,說明本第一較佳實施例的—側邊激發 M421634 【主要元件符號說明】 1…… •…端面激發共振模 153… —分色光板 組 2…… .···側邊激發放大模 10·...· •…脈衝雷射控制器 組 11 ••… •…共振腔 21 …·. …·殼體 12 •… •…第一固態雷射晶 22...·. —入光部 體 23 ..... •…出光部 13··... •…端面激發光源 24····. •…第二固態雷射晶 14···.. •…聚焦透鏡組 體 15…… •…反射鏡片組 25 ••… .…側邊激發光源組 151 ··· 251 ··· …·雷射二極體 152 ... •…出光板However, the above description is only a preferred embodiment of the present invention, and the scope of the novel implementation cannot be limited thereto, that is, the simple equivalent changes and modifications made by the novel patent application scope and the novel description content are still It is within the scope of this new patent. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic view showing a preferred embodiment of the novel solid-state laser amplifier; and Κ amplifying module=2 is not intended to illustrate the side-side excitation M421634 of the first preferred embodiment. Explanation of main component symbols] 1... •...End face excitation resonance mode 153...——Color separation plate group 2....···Side excitation amplification mode 10·...· •...Pulse laser controller group 11 •• ... •...Resonant cavity 21 ...·. . . . housing 12 •... •...first solid-state laser crystal 22...·. —light-in part 23 ..... •...light-emitting part 13··.. • End face excitation light source 24····. •...Second solid laser crystal 14···..•...focus lens assembly 15... •...reflective lens group 25 ••... ...side excitation light source Group 151 ··· 251 ·····Laser diode 152 ... •...light board

Claims (1)

M421634 六、申請專利範圍: 1. 一種固態雷射放大器,包含: 一端面激發共振模組’包括一共振腔、一位於該共 振腔中的第一固態雷射晶體 '一位於該共振腔中的脈衝 雷射控制器,及至少一將雷射光輸入該第一固態雷射晶 體端面的端面激發光源’該第一固態雷射晶體為 Nd:YV〇4固態雷射晶體;及 一側邊激發放大模組’包括一殼體、一設置於該殼 體且接收來自該端面激發共振模組雷射光的入光部、一 與该入光部相反設置的出光部、一位於該殼體中的第二 固態雷射晶體,及複數組將雷射光輸入該第二固態雷射 晶體側邊的側邊激發光源組,該第二固態雷射晶體為 Nd:YV〇4固態雷射晶體。 2·根據申請專利範圍第1項所述之固態雷射放大器,其中 ’該第一固態雷射晶體與該第二固態雷射晶體呈圓柱形 〇 3 ·根據申請專利範圍第2項所述之固態雷射放大器,其中 ’該端面激發共振模組包括數量為二且分別設置於該第 一固態雷射晶體兩端面的端面激發光源。 4. 根據申請專利範圍第3項所述之固態雷射放大器,其中 ’該端面激發共振模組還包括二組對應該端面激發光源 言免置的聚焦透鏡組,及一界定出該共振腔的反射鏡片組 〇 5. 根據申請專利範圍第4項所述之固態雷射放大器,其中 9 M421634 ,該反射鏡片組具有一高反射板、一部分反射的出光板 ’及二分別設置於該等端面激發光源前的分色光板,該 等聚焦透鏡組分別設置於該等端面激發光源與分色光板 間。 6.根據申請專利範圍第3項所述之固態雷射放大器,其中 ,該等端面激發光源為雷射二極體。 7·根據申請專利範圍第2項所述之固態雷射放大器,其中 ’側邊激發放大模組包括數量為三的側邊激發光源組, 該等側邊激發光源組環設於該第二固態雷射晶體侧邊。 8.根據申請專利範圍第7項所述之固態雷射放大器,其中 ’該等側邊激發光源組具有複數個雷射二極體。 9 ·根據申請專利範圍第5項所述之固態雷射放大器,其中 ’ s亥脈衝雷射控制器位於該高反射板與鄰近該高反射板 的分色光板間》 10.根據申請專利範圍第9項所述之固態雷射放大器,其中 ’該脈衝雷射控制器為Q開關。 、 10M421634 VI. Patent Application Range: 1. A solid-state laser amplifier comprising: an end-excited resonant module 'comprising a resonant cavity, a first solid-state laser crystal located in the resonant cavity' in the resonant cavity a pulsed laser controller, and at least one end-excited light source for inputting laser light into the end surface of the first solid-state laser crystal. The first solid-state laser crystal is a Nd:YV〇4 solid-state laser crystal; and one side excitation amplification The module 'includes a housing, a light incident portion disposed on the housing and receiving laser light from the end surface excitation resonant module, a light exit portion disposed opposite the light incident portion, and a first portion disposed in the housing A solid-state laser crystal, and a complex array of laser light input into a side excitation light source group on a side of the second solid-state laser crystal, the second solid-state laser crystal being a Nd:YV〇4 solid-state laser crystal. 2. The solid-state laser amplifier according to claim 1, wherein the first solid-state laser crystal and the second solid-state laser crystal are in a cylindrical shape ·3 according to claim 2 A solid state laser amplifier, wherein the end face excitation resonant module includes an end face excitation light source of two and disposed on both end faces of the first solid state laser crystal. 4. The solid state laser amplifier according to claim 3, wherein the end face excitation resonance module further comprises two sets of focusing lens groups corresponding to the end face excitation light source, and a defining the resonant cavity. The solid-state laser amplifier according to claim 4, wherein 9 M421634, the reflective lens group has a high-reflection plate, a part of the reflected light-emitting plate 'and two are respectively disposed on the end faces. The color separation light plate in front of the light source, the focus lens groups are respectively disposed between the end face excitation light source and the color separation light plate. 6. The solid state laser amplifier of claim 3, wherein the end face excitation source is a laser diode. The solid-state laser amplifier according to claim 2, wherein the side excitation amplification module comprises a plurality of side excitation light source groups, wherein the side excitation light source groups are disposed in the second solid state The side of the laser crystal. 8. The solid state laser amplifier of claim 7, wherein the side excitation source groups have a plurality of laser diodes. The solid-state laser amplifier according to claim 5, wherein the 's-wave pulse laser controller is located between the high-reflection plate and the color separation plate adjacent to the high-reflection plate. The solid-state laser amplifier according to the item 9, wherein the pulse laser controller is a Q switch. , 10
TW100216648U 2011-09-06 2011-09-06 Solid-state laser amplifier TWM421634U (en)

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TW100216648U TWM421634U (en) 2011-09-06 2011-09-06 Solid-state laser amplifier

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