M421.601 五、新型說明： 【新型所屬之技術領域】 [0001] 本創作係有關於一種金屬基板及其上之發光二極體 晶片封裝結構，尤指一種可提高金屬基板反射性、增加 發光二極體晶片發光亮度的金屬基板及發光二極體晶片 封裝結構。 【先前技術】 [0002] 按，現有金屬基板〔Meta 1 Core PCB，MCPCB〕的 表面處理技術包含有喷錫、鍍化銀及鍍化金等。 [0003] 其中，噴錫之表面處理法容易造成金屬基板線路層 表面有凹凸不平現象，有反射率不足，難以打金線連接 等缺失，且運用於發光二極體晶片等光學產品封裝上， 錫亦無法承受封裝時的溫度。 [0004] 又鍍化銀之表面處理法，在製程中須使用氰化物之 強鹼溶液，該強鹼溶液會對印刷電路板的阻焊油墨產生 侵蝕，造成阻焊油墨的脫落，且鍍化銀容易氧化及硫化 ，亦有反射率低的缺失。 [0005] 另鍍化金之表面處理法，則有製造成本高，且應用 於發光二極體等光學元件之組裝，容易發生吸收發光二 極體等光學元件發出之光線情形，不適合作為發光二極 體晶片等光學產品組裝之使用。 [0006] 緣是，本創作人有鑑於現有現有金屬基板的表面處 理技術，對發光二極體晶片等光學產品的封裝而言，都 有其使用上的侷限性，乃藉其多年於相關領域的製造及 表單編號A0101 第3頁/共13頁 [0007] 設計經驗和知識的辅佐，並經多方巧思，針對現有的金 屬基板之表面處理技術及與發光二極體晶片等光學元件 之封裝技術進行更新的研發改良’而研創出本創作。 【新型内容】 本創作係有關於一種金屬基板及其上之發光二極體 晶片封裝結構，其主要目的係為了提供一種可提高金屬 基板反射性、增加發光二極體晶片發光亮度的金屬基板 及發光二極體晶片封裝結構。 [0008] 為了達到上述實施目的，本創作人乃研擬如下金屬 基板及發光二極體晶月封裝結構，係包含金屬基板及發 光二極體晶片，該金屬基板底部係設有鏡面鋁板層，又 於鏡面鉬板層上設有一層鎳層，且於鎳層上設有一層鈀 層’又使發光二極體晶片組設於鏡面鋁板層上’且使發 光二極體晶片之導線接設於鎳層與鈀層間。 [0009] 如上所述之金屬基板及發光二極體晶片封裝結構’ 其中，該鏡面铭板層上係進一步設有一層絕緣層，又於 絕緣層上設有銅箱線路層，且於銅落線路層上設有阻煤 油墨層，另於銅箔線路層設具焊盤’並使鎳層及把層設 於銅謂線路層之焊盤處，又於谭盤間凹設容槽’ s玄谷槽 係由阻焊油墨層、銅箔線路層及絕緣層挖空所形成，以 使發光二極體晶片組設於該容槽底部之鏡面鋁板層上。 如上所述之金屬基板及發光二極體晶片封裝結構， 其中，該鏡面鋁板層係包含一鋁板及依序鍍設於鋁板上 之銀層及氧化鈦層。 表單编號A0101 第4頁/共13頁 [0010] [0011] [0011] [0012] [0013] [0014] [0015] 如上所述之金屬基板及發光二極體晶片封裝結構， 其中’該金屬基板係於阻焊油墨層位於發光二極體晶片 封裝處周侧進一步圍設有擋膠層。 如上所述之金屬基板及發光二極體晶片封裝結構， 其中，該發光一極體晶片上方係進一步蓋兮史有蓋板。 藉此，利用電鍍鎳鈀構造，係可達到有效提高金屬 基板表面良好的反射性，進而輔助提升發光二極體晶片 部份發光亮度，及利於打線需求’增加與發光二極體晶 片封裝良率，且將發光二極體晶片直接組裝於鏡面鋁板 層的設計’除有助於提升發光二極體晶片光線的反射率 ’更可使發光二極體晶片發光時所產生的高溫直接傳遞 至鏡面銘板層而出，以更進一步降低發光二極體晶片的 損壞率，且鏡面鋁板層價格便宜，以鏡面鋁板層取代現 有價格昂貴的銅板鑛銀之金屬基板製作，更可達到降低 成本的效果，同時鏡面鋁板層重量較銅板鍵銀之金屬基 板輕’更符合現今越趨輕、薄化的產品使甩者。 【實施方式】 而為令本創作之技術手段及其所能達成之效果，能 夠有更完整且清楚的揭露，茲詳細說明如下，請一併參 閱揭露之圖式及圖號： 首先，請參閱第一圖所示，為本創作之金屬基板及 其上之發光二極體晶片封裝結構，係包含金屬基板（1 )及封裝組設於金屬基板（1 )之發光二極體晶片（2 );其 t : 表單編號A0101 第5頁/共13頁 M421601 C〇〇16] 該金屬純（1 )，係於底部設有具反射光線功能 的鏡面铭板詹（11)，該鏡面紹板層（11)係由銘 板及依序鍍設於鋁板上之銀層及氧化鈦層所構成，又於 該鏡面鋁板層（1 1)上設有一層絕緣層（1 2)，該 絕緣層（1 2)可為熱固型膠系或感壓型膠系等絕緣膠 系材質，以供阻隔絕緣設於絕緣層（i 2)上之銅箔線 路層（1 3)與位於絕緣層（1 2)下方之鏡面鋁板層 (1 1 )間導通，該銅箔線路層（1 3 )之厚度係為1/3 〜6盎司〔oz〕，又於銅箔線路層（丄3 )上設有一層阻 焊油墨層（1 4)，以供絕緣保護銅箔線路層（1 3) ’該阻焊油墨層（1 4)可為感光型油墨，烘烤型油墨 等材質，另又於銅箔線路層（13)之焊盤（131) 處設有一層鎳層（1 5)，並於鎳層（1 5)上設有一 層把層（1 6)’復使阻焊油墨層（1 4)上位於發光 二極體晶片（2)封裝之周側處圍設有擋膠層（1 7) ’以阻擋發光二極體晶片（2 )封裝灌膠時膠液流出， 該標膠層（1 7)可為鋁板、玻纖板或硅膠等材質； [〇〇17] 該發光二極體晶片（2 )，乃使金屬基板（1 )於 二焊盤（1 3 1)間凹設一容槽（1 8)，該容槽（1 8)係由挖空阻焊油墨層（1 4)、銅箔線路層（1 3 )及絕緣層（1 2)所形成，並使發光二極體晶片（2 )封裝組設於該容槽（1 8)底部之鏡面鋁板層（1 1 )上，又使發光二極體晶片（2)之導線（2 1)接設 於相鄰之二焊盤（1 3 1)上，並使導線（2 1 )接設 處位置於鎳層（15)與鈀層（1 6 )間，復於發光二 極體晶片（2)上方蓋設有蓋板（22)【如第二圖所 表單编號A0101 第δ頁/共13頁 M421601 示】。 [0018] 據此，於封裝實施時，先於金屬基板（1 )其銅箔 線路層（1 3)之焊盤（1 3 1 )上鍍設一層鎳層（1 5)，再鍍上鈀層（1 6 )，如此，即可提高發光二極 體晶片（2)之導線（2 1 )焊接於焊盤（1 3 1)之 穩定性及良率，防止鈀層（1 6)直接鍍在銅箔線路層 (1 3)上，鈀原子會與銅箔線路層（1 3)之銅原子 相互遷移作用形成合金，而降低鈀層（1 6)與發光二 極體晶片（2)之導線（2 1 )焊接性的情形。 [0019] 於此，當發光二極體晶片（2 )導電發亮時，直接 組設於發光二極體晶片（2)底部，具有良好反射率之 鏡面鋁板層（1 1 )係會將發光二極體晶片（2)發出 之光線有效反射，以增強發光二極體晶片（2)發出光 線的亮度，而當發光二極體晶片（2)發射的光線投射 出金屬基板（1 )後，其部分光線係會照射於旁側焊盤 (1 3 1 )之鈀層（1 6)上，此時，具有高反射率之 φ 鈀層（1 6)係會將發光二極體晶片（2)發射出的光 線再進一步加以反射，以配合鏡面鋁板層（1 1 )共同 增加、提高發光二極體晶片（2)的發光效果。 [0020] 由於鈀穩定性高、不易氧化，除可提高發光二極體 晶片（2)的部份反射效率，且以電鍍鎳鈀層取代現有 打金線時所使用的高成本鍍金或銀層，更可有效降低製 造成本，又將發光二極體晶片（2)直接組裝於鏡面鋁 板層（1 1 )的設計，除有助於提升發光二極體晶片（ 2)光線的反射率，更可使發光二極體晶片發光時所產 表單編號A0101 第7頁/共13頁 M421601 [0021] [0022] 生的高溫直接傳遞至鏡面鋁板層（1 1 )而出，藉由此 熱電分離效果，係可更進一步降低發光二極體晶片（2 )的損壞率，且鏡面铭板層（1 1 )價格便宜，以鏡面 鋁板層（1 1 )取代現有價格昂貴的銅板鍍銀之金屬基 板製作，更可達到降低成本的效果，同時鏡面鋁板層（ 1 1 )重量較銅板鍍銀之金屬基板輕，更符合現今越趨 輕、薄化的產品使用。 由上述結構及實施方式可知，本創作係具有如下優 點： 1.本創作之金屬基板係利用鏡面鋁板層的良好反射 能力，來反射發光二極體晶片的光線，以提高發光二極 體的發光效率》 [0023] [0024] [0025] 2. 本創作之金屬基板係主要由鏡面鋁板層所構成， 利用價格便宜的鏡面鋁板層取代現有價格昂貴的銅板鍍 銀金屬基板，不僅可以提高發光二極體晶片的發光效率 ，更可降低成本，及減輕金屬基板的重量，以更符合現 今越趨輕、薄化的產品使用。 3. 本創作係將發光二極體晶片直接組設於鏡面鋁板 層，除提高發光二極體晶片的發光效率外，發光二極體 晶片發光時所產生的高溫更可直接傳遞至鏡面鋁板層而 出，藉由此熱電分離效果，係可有效降低發光二極體晶 片的損壞率。 4. 本創作之金屬基板於打金線時，主要係利用電鍍 鎳鈀層，以取代現有成本較高鍍金或銀層，一方面可降 表單編號A0101 第8頁/共13頁 M421.601 低成本，另方面藉由鈀層的良好反射率，更增加發光二 極體晶片發光時部分反射功效。 [0026] 綜上所述，本創作實施例確能達到所預期功效，又 其所揭露之具體構造，不僅未曾見諸於同類產品中，亦 未曾公開於申請前，誠已完全符合專利法之規定與要求 ，爰依法提出新型專利之申請，懇請惠予審查，並賜准 專利，則實感德便。 【圖式簡單說明】M421.601 V. New Description: [New Technology Field] [0001] This creation is about a metal substrate and a light-emitting diode package structure thereon, especially one that can improve the reflectivity of the metal substrate and increase the light emission. A metal substrate and a light emitting diode chip package structure for emitting luminance of a diode chip. [Prior Art] [0002] According to the surface treatment technology of the existing metal substrate [Meta 1 Core PCB, MCPCB], there are tin-sprayed, silver-plated and gold-plated gold. [0003] Among them, the surface treatment method of tin-spraying is likely to cause irregularities on the surface of the circuit layer of the metal substrate, and the reflectivity is insufficient, and it is difficult to make a gold wire connection or the like, and is applied to an optical product package such as a light-emitting diode chip. Tin also cannot withstand the temperature of the package. [0004] The surface treatment method of silver plating, in the process must use a strong alkali solution of cyanide, the strong alkali solution will cause erosion of the solder resist ink of the printed circuit board, causing the soldering ink to fall off, and the silver plating It is easy to oxidize and vulcanize, and there is also a lack of low reflectivity. [0005] In addition, the surface treatment method of gold plating has high manufacturing cost and is applied to assembly of optical elements such as light-emitting diodes, and it is easy to absorb light emitted from optical elements such as light-emitting diodes, and is not suitable as light-emitting two. Use of optical products such as polar body wafers. [0006] The reason is that, in view of the surface treatment technology of the existing metal substrates, the present creator has limitations in the use of optical products such as light-emitting diode chips, and has been used for many years in related fields. Manufacturing and Form No. A0101 Page 3 of 13 [0007] Design experience and knowledge, and multi-faceted thinking, on the surface treatment technology of existing metal substrates and packaging of optical components such as LEDs The research and development of the technology is updated and the research is created. [New content] The present invention relates to a metal substrate and a light emitting diode chip package structure thereon, the main purpose of which is to provide a metal substrate capable of improving the reflectivity of a metal substrate and increasing the brightness of the light emitting diode chip. Light-emitting diode chip package structure. [0008] In order to achieve the above-mentioned implementation, the present inventors have developed a metal substrate and a light-emitting diode crystal package structure, which comprises a metal substrate and a light-emitting diode chip, and a mirror-coated aluminum plate layer is disposed on the bottom of the metal substrate. A layer of nickel is further disposed on the mirror molybdenum plate layer, and a palladium layer is disposed on the nickel layer, and the light emitting diode chip is assembled on the mirror aluminum plate layer, and the wire of the light emitting diode chip is connected. Between the nickel layer and the palladium layer. [0009] The metal substrate and the light emitting diode chip package structure as described above, wherein the mirror surface layer is further provided with an insulating layer, and a copper box circuit layer is disposed on the insulating layer, and A coal-blocking ink layer is arranged on the circuit layer, and a pad is provided on the copper foil circuit layer, and the nickel layer and the layer are disposed on the pad of the copper circuit layer, and the cavity is recessed in the tan disk. The Xuangu trough is formed by hollowing out the solder resist ink layer, the copper foil circuit layer and the insulating layer, so that the light emitting diode chip is assembled on the mirror aluminum plate layer at the bottom of the cuvette. The metal substrate and the light emitting diode chip package structure as described above, wherein the mirror aluminum plate layer comprises an aluminum plate and a silver layer and a titanium oxide layer which are sequentially plated on the aluminum plate. Form No. A0101 Page 4 of 13 [0010] [0012] [0015] [0015] The metal substrate and the light emitting diode chip package structure as described above, wherein The metal substrate is further provided with a barrier layer on the peripheral side of the solder resist ink layer on the periphery of the LED package. The metal substrate and the LED package structure as described above, wherein the top of the light-emitting monolithic wafer is further covered with a cover. Therefore, the electroplated nickel-palladium structure can effectively improve the surface of the metal substrate, thereby improving the brightness of the surface of the light-emitting diode chip, and facilitating the wire-drawing demand to increase the package yield of the light-emitting diode chip. Moreover, the design of directly assembling the light-emitting diode wafer to the mirror aluminum plate layer 'in addition to helping to improve the light reflectivity of the light-emitting diode chip' can directly transmit the high temperature generated when the light-emitting diode wafer emits light to the mirror surface. The nameplate layer is formed to further reduce the damage rate of the light-emitting diode chip, and the mirror aluminum plate layer is cheap, and the metal substrate of the expensive copper plate ore silver is replaced by the mirror aluminum plate layer, and the cost reduction effect can be achieved. At the same time, the weight of the mirror aluminum plate layer is lighter than that of the metal plate of the copper plate key silver, which is more in line with the current lighter and thinner products. [Embodiment] In order to make the technical means of this creation and the effects that can be achieved, a more complete and clear disclosure can be made. The details are as follows. Please refer to the disclosed drawings and drawings: First, please refer to The first figure shows a metal substrate of the present invention and a light emitting diode package structure thereon, comprising a metal substrate (1) and a light emitting diode chip (2) packaged on the metal substrate (1) ;t: Form No. A0101 Page 5 of 13 M421601 C〇〇16] The metal is pure (1), and is attached to the bottom with a mirrored nameplate (11) with reflective light function. (11) is composed of a name plate and a silver layer and a titanium oxide layer which are sequentially plated on the aluminum plate, and an insulating layer (12) is disposed on the mirror aluminum plate layer (1 1), the insulating layer (1) 2) It may be an insulating adhesive material such as a thermosetting adhesive or a pressure sensitive adhesive, for providing a copper foil wiring layer (13) disposed on the insulating layer (i 2) and being located on the insulating layer (1 2 ) The conductive aluminum plate layer (1 1 ) is turned on, and the thickness of the copper foil circuit layer (1 3 ) is 1/3 to 6 ounces [oz], A solder resist ink layer (14) is provided on the copper foil circuit layer (丄3) for insulating and protecting the copper foil circuit layer (13). The solder resist ink layer (14) may be a photosensitive ink. Baking ink and other materials, and a nickel layer (15) on the pad (131) of the copper foil circuit layer (13), and a layer on the nickel layer (15) (1) 6) 'Resist the solder resist ink layer (14) on the peripheral side of the package of the light-emitting diode (2) package with a barrier layer (17) to block the LED package (2) When the glue is poured, the glue layer (17) can be made of aluminum plate, glass fiber board or silica gel; [〇〇17] The light-emitting diode chip (2) is a metal substrate (1) A cavity (18) is recessed between the two pads (1 3 1), and the cavity (18) is formed by hollowing out the solder resist layer (14), the copper foil circuit layer (13), and the insulation. The layer (12) is formed, and the LED package (2) is packaged on the mirror aluminum plate layer (1 1 ) at the bottom of the cavity (18), and the LED chip (2) is further fabricated. The wire (2 1) is connected to the adjacent two pads (1 3 1) and the wires (2 1) The connection position is between the nickel layer (15) and the palladium layer (16), and the cover plate (22) is disposed over the upper surface of the light-emitting diode chip (2) [as shown in the second figure form number A0101 δ page / total 13 pages M421601 show]. [0018] Accordingly, when the package is implemented, a nickel layer (15) is plated on the pad (1 3 1 ) of the copper foil circuit layer (1 3) of the metal substrate (1), and then palladium is plated. The layer (16), in this way, improves the stability and yield of the wire (2 1 ) of the light-emitting diode chip (2) soldered to the pad (1 31), and prevents the palladium layer (16) from being directly plated. On the copper foil wiring layer (13), the palladium atoms migrate with the copper atoms of the copper foil wiring layer (13) to form an alloy, and the palladium layer (16) and the light emitting diode wafer (2) are lowered. Wire (2 1 ) weldability. [0019] Here, when the light emitting diode chip (2) is electrically conductive, it is directly disposed at the bottom of the light emitting diode chip (2), and the mirror aluminum plate layer (1 1 ) with good reflectivity will emit light. The light emitted by the diode chip (2) is effectively reflected to enhance the brightness of the light emitted by the light-emitting diode chip (2), and when the light emitted by the light-emitting diode chip (2) is projected onto the metal substrate (1), Part of the light is irradiated onto the palladium layer (16) of the side pad (1 3 1 ). At this time, the p p layer (16) having a high reflectivity will be a light emitting diode chip (2). The emitted light is further reflected to cooperate with the mirror aluminum plate layer (1 1 ) to increase and improve the light-emitting effect of the light-emitting diode chip (2). [0020] Since the palladium has high stability and is not easily oxidized, in addition to improving the partial reflection efficiency of the light-emitting diode wafer (2), and replacing the existing gold wire with a high-cost gold-plated or silver layer by electroplating a nickel-palladium layer Moreover, the manufacturing cost can be effectively reduced, and the design of the light-emitting diode chip (2) directly assembled on the mirror aluminum plate layer (1 1 ) can be used to improve the reflectivity of the light-emitting diode chip ( 2 ). Form No. A0101 which can be produced when the light-emitting diode wafer is illuminated. Page 7 of 13 M421601 [0022] The raw high temperature is directly transmitted to the mirror aluminum plate layer (1 1 ), whereby the thermoelectric separation effect is obtained. , which can further reduce the damage rate of the light-emitting diode chip (2), and the mirror name plate layer (1 1 ) is cheap, and replaces the existing expensive copper plate silver-plated metal substrate with a mirror aluminum plate layer (1 1 ). The cost reduction effect can be achieved, and the mirror aluminum plate layer (1 1 ) is lighter than the copper plated silver metal substrate, which is more suitable for the lighter and thinner products. According to the above structure and implementation, the author has the following advantages: 1. The metal substrate of the present invention utilizes the good reflection capability of the mirror aluminum plate layer to reflect the light of the LED chip to improve the light emission of the LED. Efficiency [0024] [0025] 2. The metal substrate of the present invention is mainly composed of a mirror aluminum plate layer, and the expensive aluminum plate silver plated metal substrate is replaced by an inexpensive mirror aluminum plate layer, which can not only improve the light-emitting two The luminous efficiency of the polar body wafer can further reduce the cost and reduce the weight of the metal substrate, so as to better conform to the use of the lighter and thinner products. 3. This creation system directly sets the light-emitting diode chip on the mirror aluminum plate layer. In addition to improving the luminous efficiency of the light-emitting diode chip, the high temperature generated by the light-emitting diode wafer can be directly transmitted to the mirror aluminum plate layer. Therefore, by this thermoelectric separation effect, the damage rate of the light-emitting diode wafer can be effectively reduced. 4. When the metal substrate of this creation is used for gold wire, it mainly uses electroplated nickel-palladium layer to replace the existing high-cost gold-plated or silver layer. On the one hand, it can drop the form number A0101, page 8 / total 13 pages M421.601 low Cost, on the other hand, by the good reflectivity of the palladium layer, the partial reflection effect of the light-emitting diode wafer when emitting light is further increased. In summary, the present embodiment can achieve the expected effect, and the specific structure disclosed therein has not been seen in the same product, nor has it been disclosed before the application, and has completely complied with the patent law. The regulations and requirements, the application for a new type of patent in accordance with the law, the application for review, and the grant of a patent, are really sensible. [Simple description of the map]
[0027] 第一圖：本創作之剖視圖（一） [0028] 第二圖：本創作之剖視圖（二） 【主要元件符號說明】 (1 ) 金屬基板 (11)鏡面銘板層 (12) 絕緣層 (13)銅箔線路層 (1 3 1 )焊盤 (14)阻焊油墨層 (15) 鎳層 (16)鈀層 (17) 擋膠層 (18)容槽 (2 ) 發光二極體晶片 (21)導線 (22) 蓋板 [0029] [0030] [0031] [0032] [0033] [0034] [0035] 表單編號A0101 第9頁/共13頁[0027] First picture: cross-sectional view of the creation (1) [0028] Second picture: cross-sectional view of the creation (2) [Explanation of main component symbols] (1) Metal substrate (11) Mirror surface layer (12) Insulation layer (13) Copper foil circuit layer (1 3 1 ) Pad (14) Solder mask ink layer (15) Nickel layer (16) Palladium layer (17) Blocking layer (18) Capacitance (2) Light-emitting diode chip (21) Wire (22) Cover [0029] [0032] [0033] [0035] Form No. A0101 Page 9 of 13