CN107658373B - Light emitting diode structure and manufacturing method thereof - Google Patents
Light emitting diode structure and manufacturing method thereof Download PDFInfo
- Publication number
- CN107658373B CN107658373B CN201711089635.3A CN201711089635A CN107658373B CN 107658373 B CN107658373 B CN 107658373B CN 201711089635 A CN201711089635 A CN 201711089635A CN 107658373 B CN107658373 B CN 107658373B
- Authority
- CN
- China
- Prior art keywords
- layer
- electrode
- light emitting
- semiconductor
- electrode extension
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004519 manufacturing process Methods 0.000 title abstract description 8
- 239000004065 semiconductor Substances 0.000 claims abstract description 167
- 239000000758 substrate Substances 0.000 claims abstract description 37
- 239000010931 gold Substances 0.000 claims description 60
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 45
- 229910052782 aluminium Inorganic materials 0.000 claims description 30
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 30
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 30
- 229910052737 gold Inorganic materials 0.000 claims description 30
- 239000010948 rhodium Substances 0.000 claims description 30
- 239000000463 material Substances 0.000 claims description 25
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 18
- 239000000956 alloy Substances 0.000 claims description 18
- 229910045601 alloy Inorganic materials 0.000 claims description 18
- 229910052709 silver Inorganic materials 0.000 claims description 18
- 239000004332 silver Substances 0.000 claims description 18
- 238000002310 reflectometry Methods 0.000 claims description 17
- 229910052697 platinum Inorganic materials 0.000 claims description 15
- 229910052703 rhodium Inorganic materials 0.000 claims description 15
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims description 15
- 239000011368 organic material Substances 0.000 claims description 9
- 229910010272 inorganic material Inorganic materials 0.000 claims description 8
- 239000011147 inorganic material Substances 0.000 claims description 8
- 239000010410 layer Substances 0.000 description 248
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 42
- 229910052751 metal Inorganic materials 0.000 description 39
- 239000002184 metal Substances 0.000 description 39
- 239000010936 titanium Substances 0.000 description 28
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 20
- 239000002356 single layer Substances 0.000 description 19
- 239000011521 glass Substances 0.000 description 18
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 14
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 14
- 229910052759 nickel Inorganic materials 0.000 description 14
- BCCOBQSFUDVTJQ-UHFFFAOYSA-N octafluorocyclobutane Chemical compound FC1(F)C(F)(F)C(F)(F)C1(F)F BCCOBQSFUDVTJQ-UHFFFAOYSA-N 0.000 description 14
- 235000019407 octafluorocyclobutane Nutrition 0.000 description 14
- SKRWFPLZQAAQSU-UHFFFAOYSA-N stibanylidynetin;hydrate Chemical compound O.[Sn].[Sb] SKRWFPLZQAAQSU-UHFFFAOYSA-N 0.000 description 14
- 229910052719 titanium Inorganic materials 0.000 description 14
- 229920001296 polysiloxane Polymers 0.000 description 13
- 229920000089 Cyclic olefin copolymer Polymers 0.000 description 12
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 12
- 229920000139 polyethylene terephthalate Polymers 0.000 description 12
- 239000005020 polyethylene terephthalate Substances 0.000 description 12
- 239000004926 polymethyl methacrylate Substances 0.000 description 12
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 12
- 239000004593 Epoxy Substances 0.000 description 11
- 229920002313 fluoropolymer Polymers 0.000 description 11
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 10
- 239000004642 Polyimide Substances 0.000 description 9
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 9
- 229920001721 polyimide Polymers 0.000 description 9
- 239000004925 Acrylic resin Substances 0.000 description 8
- 229920000178 Acrylic resin Polymers 0.000 description 8
- 239000004697 Polyetherimide Substances 0.000 description 8
- 229920001601 polyetherimide Polymers 0.000 description 8
- -1 polyethylene terephthalate Polymers 0.000 description 8
- 235000012239 silicon dioxide Nutrition 0.000 description 8
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 7
- BEQNOZDXPONEMR-UHFFFAOYSA-N cadmium;oxotin Chemical compound [Cd].[Sn]=O BEQNOZDXPONEMR-UHFFFAOYSA-N 0.000 description 7
- NQBRDZOHGALQCB-UHFFFAOYSA-N oxoindium Chemical compound [O].[In] NQBRDZOHGALQCB-UHFFFAOYSA-N 0.000 description 7
- 229910052814 silicon oxide Inorganic materials 0.000 description 7
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 7
- 229910001887 tin oxide Inorganic materials 0.000 description 7
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 6
- 239000004417 polycarbonate Substances 0.000 description 6
- 229920000515 polycarbonate Polymers 0.000 description 6
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- 239000000377 silicon dioxide Substances 0.000 description 5
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 4
- 239000003989 dielectric material Substances 0.000 description 4
- 239000000395 magnesium oxide Substances 0.000 description 4
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 4
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 4
- 239000007769 metal material Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 4
- 229910005540 GaP Inorganic materials 0.000 description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 229920002379 silicone rubber Polymers 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000004945 silicone rubber Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Devices (AREA)
Abstract
The invention discloses a light-emitting diode structure and a manufacturing method thereof. The light emitting diode structure comprises a substrate, one or more semiconductor light emitting laminated layers positioned on the substrate, wherein the semiconductor light emitting laminated layers comprise a first semiconductor layer, a second semiconductor layer and a light emitting layer, the second semiconductor layer is different from the first semiconductor layer in electrical property, the light emitting layer is arranged between the first semiconductor layer and the second semiconductor layer, a first electrode is arranged on the substrate, is separated from the semiconductor light emitting laminated layers and is electrically connected with the first semiconductor layer, and a second electrode is arranged on the substrate, is separated from the semiconductor light emitting laminated layers and is electrically connected with the second semiconductor layer, wherein the height of the first electrode and the height of the second electrode are not more than the height of the semiconductor light emitting laminated layers.
Description
The invention relates to a divisional application of Chinese invention patent application (application number: 201210367164.9, application date: 2012, 9 and 28, title: light emitting diode structure and manufacturing method thereof).
Technical Field
The invention relates to a high-brightness light-emitting diode structure and a manufacturing method thereof.
Background
The light emitting principle and structure of the Light Emitting Diode (LED) are different from those of the traditional light source, and the LED has the advantages of low power consumption, long element service life, no need of lamp warming time, high reaction speed and the like. Such as optical display devices, laser diodes, traffic signs, data storage devices, communication devices, lighting devices, and medical devices.
A conventional array led, as shown in fig. 1, includes a substrate 8, a plurality of light emitting stacks 2 disposed on the substrate 8, and a second semiconductor layer 26, a light emitting layer 24, and a first semiconductor layer 22. For example, the non-conductive substrate 8 is used, the light emitting stacks 2 are insulated from each other by forming the trenches 18 between the light emitting stacks 2 by etching, and a first electrode 4 and a second electrode 6 are formed on the exposed region of the second semiconductor layer 26 and the first semiconductor layer 22 by partially etching the light emitting stacks 2 to the second semiconductor layer 26. The first electrodes 4 and the second electrodes 6 of the light emitting stacks 2 are selectively connected through the metal wires 19, so that a series or parallel circuit is formed among the light emitting stacks 2.
The above led may further be combined with a sub-mount to form a light emitting device, the light emitting device includes a sub-mount having at least one circuit; at least one solder (holder) on the submount for securing the light emitting diode to the submount and electrically connecting the substrate of the light emitting diode to the circuitry on the submount; and an electrical connection structure for electrically connecting the electrode pad of the light emitting diode with the circuit on the sub-carrier; the sub-carrier may be a lead frame (lead frame) or a large-sized damascene substrate (mounting substrate), so as to facilitate circuit planning of the light emitting device and improve the heat dissipation effect thereof.
However, the internal quantum efficiency of the current led is about 50% to 80%, and about 20% to 50% of the input power cannot be converted into light. After the light emitting diode is packaged, part of light generated by the light emitting diode is reflected or diffused in the package body and is finally absorbed by the electrode of the light emitting diode, so that the light loss is caused. In addition, because the electrodes arranged on the light emitting diodes block the light emitting path, part of light generated by the light emitting diodes can not be effectively taken out, and the brightness can not be improved.
Disclosure of Invention
To solve the above problems, the present invention provides a light emitting diode structure, which comprises a substrate, one or more semiconductor light emitting stacks disposed on the substrate, wherein the semiconductor light emitting stacks comprise a first semiconductor layer, a second semiconductor layer electrically different from the first semiconductor layer, and a light emitting layer disposed between the first semiconductor layer and the second semiconductor layer, a first electrode disposed on the substrate, separated from the semiconductor light emitting stacks, and electrically connected to the first semiconductor layer; and a second electrode on the substrate, separated from the semiconductor light-emitting stack layer, and electrically connected with the second semiconductor layer, wherein the heights of the first electrode and the second electrode do not exceed the height of the semiconductor light-emitting stack layer. A method for manufacturing a light emitting diode structure comprises the steps of providing a substrate, providing a plurality of semiconductor light emitting laminated layers on the substrate, wherein a second conducting layer is arranged between the plurality of semiconductor light emitting laminated layers and the substrate in a connected mode, forming a second electrode between the plurality of semiconductor light emitting laminated layers and electrically connected with the second conducting layer, forming an electrical insulating layer to cover the second conducting layer and the second electrode, and forming a first electrode between the plurality of semiconductor light emitting laminated layers and electrically connected with the plurality of semiconductor light emitting laminated layers.
Drawings
FIG. 1 shows a conventional array LED structure;
FIGS. 2A and 2B illustrate a high brightness LED structure according to a first embodiment of the present invention;
FIGS. 3A and 3B illustrate a high brightness LED structure according to a second embodiment of the present invention;
FIGS. 4A and 4B illustrate a high-brightness LED structure according to a third embodiment of the present invention;
FIGS. 5A and 5B illustrate a high-brightness LED structure according to a fourth embodiment of the present invention;
FIGS. 6A to 6E illustrate a method for fabricating a high brightness LED structure according to an embodiment of the present invention;
fig. 7A to 7E show a high-brightness led structure according to a fifth embodiment of the present invention.
Description of the main elements
2 semiconductor light emitting laminated 8 substrate
201 first area E1 first side
202 second side of second area E2
22 first semiconductor layer 18 trench
221 first surface 10 second conductive layer
24 first partial conductive layer of light emitting layer 101
26 second semiconductor layer 102 second partially conductive layer
4 partial region of second electrode extension 1021
42 second reflective layer 12 transparent insulating layer
5 second electrode 14 first conductive layer
6 first electrode extension 16 separation insulation layer
61 series electrode
62 first reflective layer
7 first electrode
Detailed Description
The examples are given solely for the purpose of illustration and are not intended to limit the scope of the invention. Any obvious modifications or variations can be made to the present invention without departing from the spirit or scope of the present invention.
First embodiment
Fig. 2A and 2B show a high-brightness led structure according to a first embodiment of the present invention, wherein fig. 2B shows a cross-sectional view of a dashed line AA' in fig. 2A. Fig. 2A is a top view of the high brightness led structure according to the first embodiment, wherein a plurality of semiconductor light emitting stacks 2 are disposed on a substrate 8, a second electrode 5 and a first electrode 7 are disposed on a first side E1 and a second side E2 of the substrate 8, respectively, and a first electrode extension 6 and a second electrode extension 4 are connected to the first electrode 7 and the second electrode 5, respectively, and extend to two sides of each semiconductor light emitting stack 2, and are not in direct ohmic contact with the semiconductor light emitting stacks 2.
As shown In fig. 2B, a second conductive layer 10 is disposed on the substrate 8, the substrate 8 is selected from an insulating material, such as silicon rubber, glass, quartz, ceramic or aluminum nitride, and the material of the second conductive layer 10 includes, but is not limited to, a metal material with high reflectivity, such as silver (Ag), gold (Au), aluminum (Al), indium (In), tin (Sn), and alloys thereof, or a conductive material with a transparent characteristic, such as Indium Tin Oxide (ITO), indium oxide (InO), tin oxide (SnO), Cadmium Tin Oxide (CTO), Antimony Tin Oxide (ATO), zinc oxide (ZnO), gallium phosphide (GaP), or a combination thereof.
The plurality of semiconductor light emitting stacks 2, the second electrode 5 and the second electrode extension portion 4 are located on the second conductive layer 10 and in ohmic contact with the second conductive layer 10, wherein the second electrode 5 is located on the first side E1. A groove 18 is formed between every two semiconductor light emitting stacks 2, the second electrode extension portion 4 is located in the groove 18, and the height of the second electrode extension portion 4 is lower than that of the semiconductor light emitting stacks 2. Each semiconductor light emitting stack 2 has a first semiconductor layer 22, a light emitting layer 24 and a second semiconductor layer 26, and the semiconductor light emitting stack 2 is in ohmic contact with the second conductive layer 10 through the second semiconductor layer 26. Therefore, the second semiconductor layer 26, the second electrode extension 4 and the second electrode 5 of each semiconductor light emitting stack 2 are electrically connected through the second conductive layer 10. When the first semiconductor layer 22 is a p-type semiconductor, the second semiconductor layer 26 can be an n-type semiconductor with different conductivity, whereas when the first semiconductor layer 22 is an n-type semiconductor, the second semiconductor layer 26 can be a p-type semiconductor with different conductivity. The light emitting layer 24 may be a neutral-conducting semiconductor between the first semiconductor layer 22 and the second semiconductor layer 26. When a current is applied through the semiconductor light emitting stack 2, the light emitting layer 24 emits light. When the light emitting layer 24 is made of an aluminum indium gallium phosphide (AlGaInP) -based material, red, orange, and yellow amber lights are emitted, and when the light emitting layer is made of a gallium nitride (GaN) -based material, blue or green lights are emitted. The second electrode 5 includes, but is not limited to, a single-layer or multi-layer metal structure of nickel (Ni), titanium (Ti), aluminum (Al), gold (Au). The second electrode extension portion 4 includes, but is not limited to, a metal with good conductivity and high reflectivity for reflecting light outside the semiconductor light emitting stack, such as a single-layer or multi-layer metal structure of aluminum (Al), gold (Au), platinum (Pt), silver (Ag), rhodium (Rh), and alloys thereof; the second electrode extension 4 may also be made of a metal with good electrical conductivity, such as a single-layer or multi-layer metal structure of nickel (Ni), titanium (Ti), aluminum (Al), or gold (Au), and is further coated with a reflective layer with high reflectivity for reflecting light outside the semiconductor light emitting stack, the reflective layer may be made of a metal, such as aluminum (Al), gold (Au), platinum (Pt), silver (Ag), rhodium (Rh), or an alloy thereof, and the reflective layer may also be formed of a bragg reflector (DBR) structure.
A patterned transparent insulating layer 12 covers the plurality of semiconductor light emitting stacks 2, the second electrode extensions 4 and the second conductive layer 10, exposing the first surface 221 of the first semiconductor layer 22 and not covering the second electrode 5. The material of the transparent insulating layer 12 includes, but is not limited to, organic materials such as Su8, benzocyclobutene (BCB), Perfluorocyclobutane (PFCB), Epoxy (Epoxy), Acrylic (Acrylic Resin), cyclic olefin Polymer (COC), polymethyl methacrylate (PMMA), polyethylene terephthalate (PET), Polycarbonate (PC), Polyetherimide (polyimide), Fluorocarbon Polymer (Fluorocarbon Polymer), inorganic materials such as Silicone (Silicone), Glass (Glass), dielectric materials such as aluminum oxide (Al), and the like2O3) Silicon nitride (SiN)x) Silicon oxide (SiO)2) Titanium oxide (TiO)2) Or combinations of the above.
A first conductive layer 14 covers the transparent insulating layer 12, and the first conductive layer 14 is in ohmic contact with the first surface 221 of each semiconductor light emitting stack 2 and is not in ohmic contact with the second electrode 5. The first conductive layer 14 includes a transparent conductive layer that allows light to pass through, and the material of the transparent conductive layer includes, but is not limited to, Indium Tin Oxide (ITO), indium oxide (InO), tin oxide (SnO), Cadmium Tin Oxide (CTO), Antimony Tin Oxide (ATO), zinc oxide (ZnO), gallium phosphide (GaP), or a combination thereof.
The first electrode 7 on the second side E2 of the substrate 8 and the first electrode extension 6 in the trench 18 are all located on the first conductive layer 14 and in ohmic contact with the first conductive layer 14, such that the first electrode 7 and the first electrode extension 6 are electrically connected to the first surface 221 of each semiconductor light emitting stack 2, and the height of the first electrode extension 6 is lower than the height of the semiconductor light emitting stack 2. The first electrode 7 includes, but is not limited to, a single-layer or multi-layer metal structure of nickel (Ni), titanium (Ti), aluminum (Al), and gold (Au), and the first electrode extension 6 includes, but is not limited to, a metal with good conductivity and high reflectivity for reflecting light outside the semiconductor light emitting stack, such as a single-layer or multi-layer metal structure of aluminum (Al), gold (Au), platinum (Pt), silver (Ag), rhodium (Rh), and alloys thereof; the first electrode extension 6 may also be made of a single-layer or multi-layer metal structure with good electrical conductivity, such as nickel (Ni), titanium (Ti), aluminum (Al), or gold (Au), and is further covered with a reflective layer with high reflectivity for reflecting light outside the semiconductor light emitting stack, the reflective layer may be made of metal, such as aluminum (Al), gold (Au), platinum (Pt), silver (Ag), rhodium (Rh), and alloys thereof, and the reflective layer may also be formed of a bragg reflector (DBR) structure.
When a current is injected into the second electrode 5 and conducted to both sides of each semiconductor light emitting stack 2 through the second electrode extension 4, the current is conducted through the second conductive layer 10, passes through each semiconductor light emitting stack 2, and flows out of the first electrode 7 through the conduction of the first conductive layer 14 and the first electrode extension 6. Since the second electrode extension 4 and the first electrode extension 6 have the function of reflecting light, and the transparent insulating layer 12 and the first conductive layer 14 can allow light to pass through, light emitted from the light emitting layer 24 of each semiconductor light emitting stack 2 is not blocked, so as to improve the light emitting efficiency.
Second embodiment
FIGS. 3A and 3B illustrate a high-brightness LED structure according to a second embodiment of the present invention, wherein FIG. 3B shows a cross-sectional view of the dashed line AA' in FIG. 3A. The second embodiment is different from the first embodiment in that the first electrode extension 6 located in the trench 18 is located above the second electrode extension 4 and overlaps the second electrode extension 4, and the height of the stacked first electrode extension 6 and second electrode extension 4 is lower than the height of the adjacent semiconductor light emitting stack 2.
Third embodiment
Fig. 4A and 4B show a high-brightness led structure according to a third embodiment of the present invention, wherein fig. 4A is a top view of the high-brightness led structure according to the third embodiment, and fig. 4B is a cross-sectional view of a dashed line AA' in fig. 4A. The plurality of semiconductor light emitting stacks 2 are disposed on the substrate 8 and divided into a first region 201 and a second region 202, wherein the plurality of semiconductor light emitting stacks 2 in the first region 201 are connected in parallel and connected in series with the semiconductor light emitting stacks 2 in the second region 202 through a series electrode 61, and the series electrode 61 is disposed around the semiconductor light emitting stacks 2 and is not in direct ohmic contact with the semiconductor light emitting stacks 2. The second electrode 5 and the first electrode 7 are respectively located on the first side E1 and the second side E2 on the substrate 8, and the first electrode extension 6 and the second electrode extension 4 are respectively connected to the first electrode 7 and the second electrode 5 and extend to both sides of each semiconductor light emitting stack 2, are not in direct ohmic contact with the semiconductor light emitting stack 2, and are electrically insulated from the series electrode 61.
As shown in fig. 4B, the substrate 8 has a first partial conductive layer 101, a second partial conductive layer 102 and the isolation insulating layer 16, and the first partial conductive layer 101 is electrically isolated from the second partial conductive layer 102 by the isolation insulating layer 16. The substrate 8 is selected from an insulating material such as silicone rubber, glass, quartz, ceramic or aluminum nitride. The material of the first partial conductive layer 101 and the second partial conductive layer 102 includes, but is not limited to, a metal material with high reflectivity, such as silver (Ag), gold (Au), aluminum (Al), indium (In), tin (Sn), and alloys thereof, or a conductive material with a transparent property, such as Indium Tin Oxide (ITO), indium oxide (InO), tin oxide (SnO), Cadmium Tin Oxide (CTO), Antimony Tin Oxide (ATO), zinc oxide (ZnO), gallium phosphide (GaP), or a combination thereof. The separation insulating layer 16 includes, but is not limited to, spin-on glass, silicon resin, benzocyclobutene (BCB), Epoxy resin (Epoxy), Polyimide (Polyimide), or Perfluorocyclobutane (PFCB).
The plurality of semiconductor light emitting stacks 2, the second electrodes 5 and the second electrode extensions 4 in the first region 201 are located on the first partial conductive layer 101 and in ohmic contact with the first partial conductive layer 101. The semiconductor light emitting stack 2 in the second region 202 is located on the second partially conductive layer 102 in ohmic contact with the second partially conductive layer 102.
Wherein, a trench 18 is formed between every two semiconductor light emitting stacks 2, the second electrode extension portion 4 is located in the trench 18, and the height of the second electrode extension portion 4 is lower than that of the semiconductor light emitting stack 2. Each of the semiconductor light emitting stacks 2 has a first semiconductor layer 22, a light emitting layer 24 and a second semiconductor layer 26, the semiconductor light emitting stack 2 in the first region 201 is in ohmic contact with the first partial conductive layer 101 through the second semiconductor layer 26, and the semiconductor light emitting stack 2 in the second region 202 is in ohmic contact with the second partial conductive layer 102 through the second semiconductor layer 26. Therefore, the second semiconductor layer 26, the second electrode extension 4 and the second electrode 5 of the semiconductor light emitting stack 2 in the first region 201 are electrically connected through the first partial conductive layer 101.
When the first semiconductor layer 22 is a p-type semiconductor, the second semiconductor layer 26 can be an n-type semiconductor with different conductivity, whereas when the first semiconductor layer 22 is an n-type semiconductor, the second semiconductor layer 26 can be a p-type semiconductor with different conductivity. The light emitting layer 24 is a neutral-charged semiconductor between the first semiconductor layer 22 and the second semiconductor layer 26. When a current is applied through the semiconductor light emitting stack 2, the light emitting layer 24 emits light. When the light emitting layer 24 is made of an aluminum indium gallium phosphide (AlGaInP) -based material, red, orange, and yellow amber lights are emitted, and when the light emitting layer is made of a gallium nitride (GaN) -based material, blue or green lights are emitted. The second electrode 5 includes, but is not limited to, a single-layer or multi-layer metal structure of nickel (Ni), titanium (Ti), aluminum (Al), gold (Au). The second electrode extension portion 4 includes, but is not limited to, a metal with good conductivity and high reflectivity for reflecting light outside the semiconductor light emitting stack, such as a single-layer or multi-layer metal structure of aluminum (Al), gold (Au), platinum (Pt), silver (Ag), rhodium (Rh), and alloys thereof; the second electrode extension 4 may also be made of a metal with good electrical conductivity, such as a single-layer or multi-layer metal structure of nickel (Ni), titanium (Ti), aluminum (Al), or gold (Au), and is further coated with a reflective layer with high reflectivity for reflecting light outside the semiconductor light emitting stack, the reflective layer may be made of a metal, such as aluminum (Al), gold (Au), platinum (Pt), silver (Ag), rhodium (Rh), or an alloy thereof, and the reflective layer may also be formed of a bragg reflector (DBR) structure.
A patterned transparent insulating layer 12 covers the plurality of semiconductor light emitting stacks 2, the second electrode extension portions 4, the first partial conductive layer 101, and the second partial conductive layer 102, and the first surface 221 of the first semiconductor layer 22, the partial region 1021 of the second partial conductive layer 102, and the second electrode 5 are not covered by the transparent insulating layer 12. The material of the transparent insulating layer 12 includes, but is not limited to, organic materials such as Su8, benzocyclobutene (BCB), Perfluorocyclobutane (PFCB), Epoxy (Epoxy), Acrylic (Acrylic Resin), cyclic olefin polymer (COC), polymethyl methacrylate (PMMA), polyethylene terephthalate (PET), Polycarbonate (PC), Polyetherimide (polyimide), fluorocarbon polymer (fluorocarbon polymer), inorganic materials such as Silicone (Silicone), Glass (Glass), dielectric materials such as aluminum oxide (Al), and the like2O3) Silicon nitride (SiN)x) Silicon oxide (SiO)2) Titanium oxide (TiO)2) Or combinations of the above.
A patterned first conductive layer 14 covers the transparent insulating layer 12, and the first conductive layer 14 in the first region 201 is not connected to the first conductive layer 14 in the second region 202. In the first region 201, the first conductive layer 14 is in ohmic contact with the first surface 221 of each semiconductor light emitting stack 2, and is not in ohmic contact with the second electrode 5. In the second region 202, the first conductive layer 14 is in ohmic contact with the first surface 221 of the semiconductor light emitting stack 2, and the semiconductor light emitting stack 2 is electrically connected to the first electrode 7 and the first electrode extension 6 on the second side E2 on the substrate 8 through the first conductive layer 14. The first conductive layer 14 is a transparent conductive layer that allows light to pass through, and the material of the transparent conductive layer includes, but is not limited to, Indium Tin Oxide (ITO), indium oxide (InO), tin oxide (SnO), Cadmium Tin Oxide (CTO), Antimony Tin Oxide (ATO), zinc oxide (ZnO), gallium phosphide (GaP), or a combination thereof. The first electrode 7 includes, but is not limited to, a single-layer or multi-layer metal structure of nickel (Ni), titanium (Ti), aluminum (Al), gold (Au).
The series electrode 61 located in the trench 18 is in ohmic contact with the first conductive layer 14 and the second partial conductive layer 102 in the first region 201, such that the series electrode 61 is electrically connected to the second semiconductor layer 26 of the semiconductor light emitting stack 2 in the second region 202, wherein the series electrode 61 is not overlapped with the second electrode extension 4, and the height of the series electrode 61 and the second electrode extension 4 is lower than the height of the adjacent semiconductor light emitting stack 2. The first electrode extension 6, the second electrode extension 4 and the serial electrode 61 include but are not limited to metals with good conductivity and high reflectivity, the materials for forming the first electrode extension 6, the second electrode extension 4 and the series electrode 61 include a single-layer or multi-layer metal structure of aluminum (Al), gold (Au), platinum (Pt), silver (Ag), rhodium (Rh) and alloys thereof, and may be made of metal with good conductivity, such as nickel (Ni), titanium (Ti), aluminum (Al) and gold (Au), and a reflective layer with high reflectivity for reflecting light outside the semiconductor light-emitting stack layer, wherein the reflective layer is made of metal, such as aluminum (Al), gold (Au), platinum (Pt), silver (Ag), rhodium (Rh), and alloys thereof, the reflective layer may also be formed of a bragg reflector (DBR) structure.
When a current is injected into the second electrode 5, the current is conducted to both sides of each of the semiconductor light emitting stacks 2 in the first region 201 through the second electrode extension portion 4, the current is conducted through the first partial conductive layer 101, and simultaneously passes through each of the semiconductor light emitting stacks 2 in the first region 201, and then is conducted to the second partial conductive layer 102 through the first conductive layer 14 and the serial electrode 61 in the first region 201, after the current passes through the semiconductor light emitting stacks 2 in the second region 202, the current is conducted to the first electrode extension portion 6 and the first electrode 7 through the first conductive layer 14 in the second region 202, and then flows out, since the second electrode extension portion 4, the serial electrode 61 and the first electrode extension portion 6 have a function of reflecting light, and the transparent insulating layer 12 and the first conductive layer 14 can allow light to pass through, light emitted from the light emitting layer 24 of each of the semiconductor light emitting stacks 2 is not blocked and can be transmitted by the second electrode extension portion 4, The series electrode 61 and the first electrode extension portion 6 reflect light to improve light extraction efficiency.
Fourth embodiment
Fig. 5A and 5B show a high-brightness led structure according to a fourth embodiment of the present invention, wherein fig. 5A is a top view of the high-brightness led structure according to the fourth embodiment, and fig. 5B is a cross-sectional view of a dashed line AA' in fig. 5A. The difference between the fourth embodiment and the third embodiment is that the serial electrode 61 located in the trench 18 is located above the second electrode extension 4 and overlapped with the second electrode extension 4, and the height of the serial electrode 61 after being overlapped with the second electrode extension 4 is lower than the height of the adjacent semiconductor light emitting stack 2. In this embodiment, the series electrode 61 is electrically connected to the second semiconductor layer 26 of the semiconductor light emitting stack 2 in the second region 202 by ohmic contact of the series electrode 61 with the first conductive layer 14 and ohmic contact of the first conductive layer 14 with the second partially conductive layer 102.
Fifth embodiment
Fig. 7A to 7E are cross-sectional views of a high-brightness led structure according to a fifth embodiment of the present invention, wherein fig. 7B to 7E show BB' of fig. 7A. Fig. 7A is a top view of a high brightness light emitting diode structure according to a fifth embodiment, in which the first electrode 7 and the second electrode 5 are respectively disposed on the first semiconductor layer 22 and the second semiconductor layer 26, the first electrode extension portion 6 and the second electrode extension portion 4 are respectively electrically connected to the first electrode 7 and the second electrode 5, and extend to other regions of the first semiconductor layer 22 and the second semiconductor layer 26 to increase the current spreading area, wherein the first electrode extension portion 6 and the second electrode extension portion 4 are respectively covered by the first reflective layer 62 and the second reflective layer 42. When the high-brightness led structure is packaged inside the package, the first reflective layer 62 and the second reflective layer 42 can reflect the light reflected or diffused inside the package to avoid being absorbed by the first electrode extension 6 and the second electrode extension 4.
As shown in fig. 7B, the semiconductor light emitting stack 2 disposed on the substrate 8 includes a light emitting layer 24 disposed between a first semiconductor layer 22 and a second semiconductor layer 26, wherein the second semiconductor layer 26 can be a different conductivity n-type semiconductor when the first semiconductor layer 22 is a p-type semiconductor, and the second semiconductor layer 26 can be a different conductivity p-type semiconductor when the first semiconductor layer 22 is an n-type semiconductor. The light emitting layer 24 may be a neutrally charged semiconductor. When a current is applied through the semiconductor light emitting stack 2, the light emitting layer 24 emits light. When the light emitting layer 24 is made of an aluminum indium gallium phosphide (AlGaInP) -based material, red, orange, and yellow amber lights are emitted, and when the light emitting layer is made of a gallium nitride (GaN) -based material, blue or green lights are emitted. The first conductive layer 14 is formed on the first semiconductor layer 22, and the first conductive layer 14 includes a transparent conductive layer that allows light to pass through, and the material of the transparent conductive layer includes, but is not limited to, Indium Tin Oxide (ITO), indium oxide (InO), tin oxide (SnO), Cadmium Tin Oxide (CTO), Antimony Tin Oxide (ATO), zinc oxide (ZnO), gallium phosphide (GaP), or a combination thereof. The second electrode 5 and a second electrode extension (not shown) are formed on the second semiconductor layer 26 in ohmic contact with the second semiconductor layer 26. The first electrode 7 and the first electrode extension 6 are formed on the first conductive layer 14, and are in ohmic contact with the first conductive layer 14.
The first electrode 7 and the second electrode 5 include, but are not limited to, a single-layer or multi-layer metal structure of nickel (Ni), titanium (Ti), aluminum (Al), gold (Au). The first electrode extension 6 and the second electrode extension (not shown) include a metal having good conductivity, such as a single-layer or multi-layer metal structure of nickel (Ni), titanium (Ti), aluminum (Al), and gold (Au). The upper surfaces of the first electrode extension portion 6 and the second electrode extension portion (not shown) are covered by a reflective layer 62 and a second reflective layer (not shown), respectively, for reflecting light outside the semiconductor light emitting stack, and the reflectivity of the first reflective layer 62 and the second reflective layer (not shown) is higher than that of the first electrode 7, the second electrode 5, the first electrode extension portion 6 and the second electrode extension portion (not shown). In one embodiment, the first reflective layer 62 and the second reflective layer (Not shown) includes a metal material including aluminum (Al), gold (Au), platinum (Pt), silver (Ag), rhodium (Rh) and an alloy thereof, and a bragg reflector (DBR) including a material selected from an organic material including polyimide (polyimide), benzocyclobutene (BCB), Perfluorocyclobutane (PFCB), Su8, Epoxy Resin (Epoxy), Acrylic Resin (Acrylic Resin), cyclic olefin Polymer (COC), polymethyl methacrylate (PMMA), polyethylene terephthalate (PET), Polycarbonate (PC), Polyetherimide (Polyetherimide), and Fluorocarbon Polymer (Fluorocarbon Polymer), and an inorganic material including Indium Tin Oxide (ITO), magnesium oxide (MgO), Silicone (Silicone), Glass (Glass), aluminum oxide (Al)2O3) Silicon oxide (SiO)2) Titanium oxide (TiO)2) Silicon nitride (SiN)x) Spin On Glass (SOG). As shown in fig. 7B, the first electrode 7 and the first electrode extension 6 are formed in different process steps, so the thickness of the first electrode 7 may be greater than the thickness of the first electrode extension 6 plus the thickness of the first reflective layer 62.
As shown in fig. 7C, in another embodiment, the first electrode 7 and the first electrode extension 6 are completed in the same process step, and then the first reflective layer 62 covers the first electrode extension 6 and exposes the surface of the first electrode 7 for wire bonding, so that the height of the first reflective layer 62 is higher than that of the first electrode 7.
As shown in fig. 7D, the first reflective layer 62 is directly formed on the first conductive layer 14 to replace the first electrode extension 6. The second reflective layer 42 is directly formed on the second semiconductor layer 26 to replace the second electrode extension 4. Then, the first electrode 7 and the second electrode 5 are formed on the first reflective layer 62 and the second reflective layer 42, respectively, and electrically connected to the first reflective layer 62 and the second reflective layer 42, respectively, for wire bonding. The material of the first and second reflective layers 62 and 42 includes metal, such as aluminum (Al), gold (Au), platinum (Pt), silver (Ag), rhodium (Rh), and alloys thereof.
As shown in fig. 7E, a transparent insulating layer 12 is formed on the semiconductor light emitting stack 2 to cover the first conductive layer 14, the first electrode extension 6 and the second electrode extension(s) ((Not shown) exposing the first electrode 7 and the second electrode 5 for wire bonding. The material of the transparent insulating layer 12 includes, but is not limited to, organic materials such as Su8, benzocyclobutene (BCB), Perfluorocyclobutane (PFCB), Epoxy (Epoxy), Acrylic (Acrylic Resin), cyclic olefin Polymer (COC), polymethyl methacrylate (PMMA), polyethylene terephthalate (PET), Polycarbonate (PC), Polyetherimide (polyimide), Fluorocarbon Polymer (Fluorocarbon Polymer), inorganic materials such as Silicone (Silicone), Glass (Glass), dielectric materials such as aluminum oxide (Al), and the like2O3) Silicon nitride (SiN)x) Silicon oxide (SiO)2) Titanium oxide (TiO)2) Or combinations of the above. Next, a first reflective layer 62 and a second reflective layer (not shown) are respectively formed on the transparent insulating layer 12, opposite to the regions above the first electrode extension portion 6 and the second electrode extension portion 4, wherein the first reflective layer 62 and the second reflective layer (not shown) include a bragg reflector (DBR), and the material of the bragg reflector (DBR) may be selected from organic materials and inorganic materials, wherein the organic materials include polyimide (polyimide), benzocyclobutene (BCB), Perfluorocyclobutane (PFCB), Su8, Epoxy Resin (Epoxy), Acrylic Resin (Acrylic Resin), cyclic olefin polymer (COC), polymethyl methacrylate (PMMA), polyethylene terephthalate (PET), Polycarbonate (PC), Polyetherimide (Polyetherimide), and fluorocarbon polymer (fluorocarbon polymer), and the inorganic materials include Indium Tin Oxide (ITO), magnesium oxide (MgO), Silicone (Silicone), silicon oxide (Silicone), and silicon dioxide (si), and silicon dioxide (hf), and the organic materials include silicon dioxide (hf), silicon dioxide, and silicon dioxide, Glass (Glass), alumina (Al)2O3) Silicon oxide (SiO)2) Titanium oxide (TiO)2) Silicon nitride (SiN)x) Spin On Glass (SOG).
Example of the production Process
Fig. 6A to 6E illustrate a manufacturing method of a high-brightness led structure according to an embodiment of the invention. As shown in fig. 6A, a substrate 8 having a second conductive layer 10 thereon is provided, a plurality of semiconductor light emitting stacks 2 are disposed on the second conductive layer 10 and in ohmic contact with the second conductive layer 10, and a trench 18 is formed between each semiconductor light emitting stack 2. Wherein the substrate 8 is selected from an insulating material, such as silicon rubber, glass, quartz, ceramic or aluminum nitride. The material of the second conductive layer 10 includes, but is not limited to, a metal material having a high reflectivity, such as silver (Ag), gold (Au), aluminum (Al), indium (In), tin (Sn), and alloys thereof, or a conductive material having a transparent characteristic, such as Indium Tin Oxide (ITO), indium oxide (InO), tin oxide (SnO), Cadmium Tin Oxide (CTO), Antimony Tin Oxide (ATO), zinc oxide (ZnO), gallium phosphide (GaP), or a combination thereof. Each semiconductor light emitting stack 2 has a first semiconductor layer 22, a light emitting layer 24 and a second semiconductor layer 26, and the semiconductor light emitting stack 2 is in ohmic contact with the second conductive layer 10 through the second semiconductor layer 26.
As shown in fig. 6B, a second electrode 5 is formed on the first side E1 of the substrate 8 and in ohmic contact with the second conductive layer 10 on the second conductive layer 10, and a second electrode extension 4 is formed in the trench 18 and in ohmic contact with the second conductive layer 10, wherein the second electrode 5 is electrically connected to the second electrode extension 4. The second electrode 5 includes, but is not limited to, a single-layer or multi-layer metal structure of nickel (Ni), titanium (Ti), aluminum (Al), gold (Au). The second electrode extension 4 includes, but is not limited to, a metal having good electrical conductivity and high reflectivity, such as a single-layer or multi-layer metal structure of aluminum (Al), gold (Au), platinum (Pt), silver (Ag), rhodium (Rh), and alloys thereof; the second electrode extension 4 may also be made of a single-layer or multi-layer metal structure of metal with good conductivity, such as nickel (Ni), titanium (Ti), aluminum (Al), or gold (Au), and covered by a layer of material with high reflectivity, which includes but is not limited to metals, such as platinum (Pt), silver (Ag), rhodium (Rh), and alloys thereof.
As shown in fig. 6C, a transparent insulating layer 12 is formed to cover the second conductive layer 10, the plurality of semiconductor light emitting stacks 2 and the second electrode extension portions 4, exposing the first surface 221 of the semiconductor light emitting stacks 2. The material of the transparent insulating layer 12 includes, but is not limited to, organic materials such as Su8, benzocyclobutene (BCB), Perfluorocyclobutane (PFCB), Epoxy (Epoxy), Acrylic (Acrylic Resin), cyclic olefin polymer (COC), polymethyl methacrylate (PMMA), polyethylene terephthalate (PET), Polycarbonate (PC), Polyetherimide (polyethylimide), fluorocarbon polymer (fluorocabon polymer), inorganic materials such as Silicone (Silicone)) Glass (Glass), dielectric materials, e.g. alumina (Al)2O3) Silicon nitride (SiN)x) Silicon oxide (SiO)2) Titanium oxide (TiO)2) Or combinations of the above.
As shown in fig. 6D, a first conductive layer 14 is formed on the transparent insulating layer 12, and the first conductive layer 14 is in ohmic contact with the first surface 221 of each semiconductor light emitting stack 2. The first conductive layer 14 includes a transparent conductive layer that allows light to pass through, and the material of the transparent conductive layer includes, but is not limited to, Indium Tin Oxide (ITO), indium oxide (InO), tin oxide (SnO), Cadmium Tin Oxide (CTO), Antimony Tin Oxide (ATO), zinc oxide (ZnO), gallium phosphide (GaP), or a combination thereof.
As shown in fig. 6E, a first electrode 7 and a first electrode extension 6 are formed on the first conductive layer 14 and in ohmic contact with the first conductive layer 14, wherein the first electrode 7 is electrically connected to the first electrode extension 6, the first electrode 7 is located on the second side E2 of the substrate 8, and the first electrode extension 6 is located in the trench 18. The first electrode 7 includes, but is not limited to, a single-layer or multi-layer metal structure of nickel (Ni), titanium (Ti), aluminum (Al), gold (Au), and the first electrode extension 6 includes, but is not limited to, a metal having good electrical conductivity and high reflectivity, such as a single-layer or multi-layer metal structure of aluminum (Al), gold (Au), platinum (Pt), silver (Ag), rhodium (Rh), and alloys thereof; the second electrode extension 4 may also be made of a single-layer or multi-layer metal structure of metal with good conductivity, such as nickel (Ni), titanium (Ti), aluminum (Al), or gold (Au), and covered by a layer of material with high reflectivity, which includes but is not limited to metals, such as platinum (Pt), silver (Ag), rhodium (Rh), and alloys thereof.
Claims (10)
1. A light emitting diode structure comprising:
a substrate;
a first semiconductor layer located on the substrate and having an upper surface opposite to the substrate;
a second semiconductor layer, wherein the second semiconductor layer is electrically different from the first semiconductor layer;
a light emitting layer between the first semiconductor layer and the second semiconductor layer, the second semiconductor layer being located between the substrate and the light emitting layer;
a first electrode on the upper surface;
a first electrode extension part located on the upper surface and connected with the first electrode; and
a first reflective layer only covering the first electrode extension part and not contacting the upper surface;
wherein the reflectivity of the first reflective layer is higher than that of the first electrode and the first electrode extension part, and the first electrode extension part comprise the same material;
wherein a light ray is emitted from the upper surface.
2. The led structure of claim 1, wherein the top surface comprises a first portion and a second portion, the first electrode extension, and the first reflective layer covering the first portion, the light exiting from the second portion.
3. The led structure of claim 1, further comprising a first conductive layer between the top surface and the first electrode or the first electrode extension.
4. The LED structure of claim 3, wherein the first conductive layer comprises a transparent conductive layer material.
5. The led structure of claim 1, wherein the first reflective layer does not cover the first electrode.
6. The light emitting diode structure of claim 1, wherein the first reflective layer comprises aluminum (Al), gold (Au), platinum (Pt), silver (Ag), rhodium (Rh), or alloys thereof.
7. The light emitting diode structure of claim 1, wherein the first reflective layer comprises a bragg reflector (DBR) structure, the DBR comprising an organic material or an inorganic material.
8. The led structure of claim 1, further comprising a transparent insulating layer covering the upper surface of the first semiconductor layer and the first electrode extension portion and exposing the first electrode.
9. The led structure of claim 1, wherein the first electrode and the first electrode extension have the same thickness.
10. The led structure of claim 1, wherein the first reflective layer conforms to the first electrode extension profile.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012100860418 | 2012-03-28 | ||
| CN201210086041 | 2012-03-28 | ||
| CN201210367164.9A CN103367592B (en) | 2012-03-28 | 2012-09-28 | Light emitting diode construction and its manufacture method |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210367164.9A Division CN103367592B (en) | 2012-03-28 | 2012-09-28 | Light emitting diode construction and its manufacture method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107658373A CN107658373A (en) | 2018-02-02 |
| CN107658373B true CN107658373B (en) | 2020-01-21 |
Family
ID=49368516
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711089635.3A Active CN107658373B (en) | 2012-03-28 | 2012-09-28 | Light emitting diode structure and manufacturing method thereof |
| CN201210367164.9A Active CN103367592B (en) | 2012-03-28 | 2012-09-28 | Light emitting diode construction and its manufacture method |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210367164.9A Active CN103367592B (en) | 2012-03-28 | 2012-09-28 | Light emitting diode construction and its manufacture method |
Country Status (1)
| Country | Link |
|---|---|
| CN (2) | CN107658373B (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104157744B (en) * | 2014-07-21 | 2017-07-28 | 中国电子科技集团公司第五十五研究所 | It is a kind of that the method for realizing Buddha's warrior attendant ground mass GaN is shifted based on epitaxial layer |
| CN111900152B (en) * | 2019-05-06 | 2023-07-28 | 纳微朗科技(深圳)有限公司 | Integrated unit diode chip |
| CN112992957A (en) * | 2019-12-17 | 2021-06-18 | 深圳第三代半导体研究院 | Light-emitting diode |
| KR20210132259A (en) * | 2020-04-24 | 2021-11-04 | 삼성디스플레이 주식회사 | Pixel, display device including the same, and method of fabricating the display device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100426537C (en) * | 2003-03-13 | 2008-10-15 | 昭和电工株式会社 | Light-emitting diode and its manufacturing method |
| CN101872824A (en) * | 2010-06-07 | 2010-10-27 | 厦门市三安光电科技有限公司 | Gallium nitride-based inverted light-emitting diode (LED) with two reflecting layers on lateral surfaces and preparation method thereof |
| CN102201507A (en) * | 2010-03-25 | 2011-09-28 | Lg伊诺特有限公司 | Light-emitting device |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7714340B2 (en) * | 2006-09-06 | 2010-05-11 | Palo Alto Research Center Incorporated | Nitride light-emitting device |
| US8616732B2 (en) * | 2010-02-12 | 2013-12-31 | Toshiba Lighting & Technology Corporation | Light-emitting device and illumination device |
| US8618565B2 (en) * | 2010-03-22 | 2013-12-31 | Seoul Opto Device Co., Ltd. | High efficiency light emitting diode |
| CN102097562A (en) * | 2010-12-14 | 2011-06-15 | 金木子 | Alternating current surface mounted type vertical structure semiconductor light-emitting diode |
-
2012
- 2012-09-28 CN CN201711089635.3A patent/CN107658373B/en active Active
- 2012-09-28 CN CN201210367164.9A patent/CN103367592B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100426537C (en) * | 2003-03-13 | 2008-10-15 | 昭和电工株式会社 | Light-emitting diode and its manufacturing method |
| CN102201507A (en) * | 2010-03-25 | 2011-09-28 | Lg伊诺特有限公司 | Light-emitting device |
| CN101872824A (en) * | 2010-06-07 | 2010-10-27 | 厦门市三安光电科技有限公司 | Gallium nitride-based inverted light-emitting diode (LED) with two reflecting layers on lateral surfaces and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107658373A (en) | 2018-02-02 |
| CN103367592A (en) | 2013-10-23 |
| CN103367592B (en) | 2017-12-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI572054B (en) | High brightness light emitting diode structure and the manufacturing method thereof | |
| TWI616004B (en) | Semiconductor light-emitting device | |
| US8592847B2 (en) | Light-emitting device | |
| CN104868030B (en) | Luminescent device | |
| US9318663B2 (en) | Light-emitting element | |
| TWI632692B (en) | Semiconductor light-emitting device | |
| CN105304807B (en) | Light emitting diode, light-emitting device and its manufacture method | |
| US9305904B2 (en) | Light-emitting diode device | |
| CN107658373B (en) | Light emitting diode structure and manufacturing method thereof | |
| US9466775B2 (en) | Light-emitting element and the light-emitting array having the same | |
| TWI623116B (en) | Light-Emitting Device | |
| CN108269908B (en) | Light emitting diode device | |
| TWI672837B (en) | Semiconductor light-emitting device | |
| TWI418056B (en) | Light-emitting element | |
| CN110047865B (en) | Light-emitting element with multiple light-emitting structures | |
| CN104112815A (en) | Light-emitting diode device and manufacturing method thereof | |
| KR20130009038A (en) | Light emitting device, method of fabricating the same and light emitting device package |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |