M419644 五、新型說明： 【新型所屬之技術領域】 本創作係關於一種研磨機，尤指一種具有紫外光照射 單元且適用於化學機械研磨（Chemica丨Meehanieal Polishing ; CMP)之研磨機。 【先前技術】 於半導體產業發展中，化學機械研磨製程是一種可用 於將+導體基板拋光'或是研磨除去物質之較佳方法。 化學機械研磨（Chemical Mechanical p〇iishing)，或稱 為化學機械平坦化（Chemical Mechanic^ Planarizati〇n)，是 在研磨機的研磨墊上注入化學助劑（即，研磨漿料（siurry)) 進行研磨待研磨件.（例如，晶圓）的動作，目的是將待研磨 件上的介電層與金屬層磨平，使其全面平坦化以提供下一 層電路形成所用，進而達到立體佈線或者多層佈線，提升 配線密度（pattern density)，同時降低缺陷密度（defect density)，提升製程良率。半導體技術領域中，利用奈米技 術的化學機械研磨是目前最有效達到晶圓表面平坦化的方 法。 影響化學機械研磨效率的主要因素包括有：晶圓與研 磨塾的旋轉速度、研磨焚料與研磨顆粒的化學成份、研磨 溫度、以及研磨墊的材質、研磨墊的表面粗糙度等。 如圖1所示，其係一習知化學機械研磨之研磨機1，係 包括有-研磨塾Η、支承架13、承載台12、研磨㈣供應 M419644 單兀14、以及旋轉單元（圖未示）等元件。研磨墊η配置於 Κ載σ12上方，並藉由旋轉單元而可旋轉。一般而言研 磨墊11之材質通常為不透光之材料（例如，聚胺基甲醆乙 酉曰）而承載台12為金屬材質》操作時，係將晶圓丨〇之待研 磨面朝下吸著於支承架13下方。支承架Β朝向研磨签11的 方向下推該晶圓1〇。研磨漿料供應單元丨4提供研磨漿料， 研磨襞料會流至晶圓i 〇與研磨塾l i之間。研磨漿料—般含 有可化學性溶解晶圓10之化學材料以及物理性移除晶圓10 表面部分之研磨材料。 然而，習知化學機械研磨仍無法得到非常好的效果， 且有時會有化學材料與待研磨物件反應性^佳而造成無法 侍到平整研磨面之情形。因& ’倘若可以使用光照方式提 升研磨漿料與待研磨物件之反應性，則不僅可提升化學機 械研磨之研磨效果，亦可縮短磨時間，提供工廠生產之產 【新型内容】 本創作之主要目的係在提供一種研磨機，較佳係用於 化學機械研磨’俾能於研磨進行時提供紫外光照射使提 升研磨效果，亦可縮短料間m廠生產之產率。 1之:磨機’係包括··—承載台’係具有複數貫 牙該承載台之貫穿孔；—旋轉單元，係與該承載台連接， 以使該承載台旋轉；一研磨势，係配至於該承載台上，且 該研磨墊之材質係為透光材質；—研磨聚料供應單元俜 M419644 提供-研磨漿料至該研詩表面；至少—紫外光照 二係配至於該承載台下；以及一控制模組，係分別盘該 =轉早兀及該紫外光照光單元連接·:纟中，該紫外光照光 早兀係發出-紫外光，且該紫外光係穿過該承載台之貫 孔，而照射至該研磨漿料。 #本創作之研磨機中，由於該研磨塾之材質係為透光材 質，且承載台具有複數貫穿孔，因此設置於承載台下方之 i外光照光單元所發出紫外光可穿過該承載台之貫穿孔， 而直接照射至該研磨漿料。如此，於研磨機操作過程中（化 學機械研磨進行中）’紫外光可直接照射至研磨㈣與待研 磨件之接觸面（而不是間接照射，例如反射），提昇化學機 械研磨效率，以及使化學機械研磨加速進行。 習知之研磨機未裝設有紫外光照光單元，因此無法藉 由光照提升研磨效率。此外，即使於習知之研磨機中加^ i外光照光單元於研磨墊上方，仍無法使紫外光「直接」 照射至研磨漿料與待研磨件之接觸面，因此照射紫外光之 效率有限，對於化學機械研磨的效率仍無法大幅提升。然 而，本創作之研磨機可使紫外光直接照射至研磨漿料與待 研磨件之接觸面，因此可確實達到提昇化學機械研磨效 率’以及加快化學機械研磨速率的效果。 本創作之研磨機，較佳更包括檔止件，係配至於該研 磨塾之上，當待研磨件配置於該研磨塾上時，該檔止件係 配置於該待研磨件之一側。檔止件不會隨著承載台之旋轉 而移動，因此可將待研磨件檔止於一處，而使待研磨件不 會隨著旋轉之研料而順時針或逆時針流動。檔止件使用 之數目可視需求而調整。相較於習知研磨機中所使用之支 =架（如圖1所示，係配置於待研磨件上方，以吸著方式固 ^待研磨件）’本創作之檔止件之體積較小，構造較為簡 單’操作上也較便利。 本創作之研磨機中，該研磨墊較佳可為圓盤狀 ，且研 磨塾之材質較佳可選自i :玻璃、石英、以及氧化銘所組 成之群組。研磨墊之厚度較佳可為5mm至80mm，且研磨墊 之厚度會隨使用次數而減少。 本創作之研磨機中，該紫外光之波長較佳可為 lOOnm〜400nm 〇 本創作之研磨機中，該紫外光照光單元較佳可呈幾何 形狀排列。例如，當紫外光照光單元數目為六個時，其彼 此間可呈現一正六角形之排列；#當紫外光照光單元數目 為七個時’其彼此間可呈現一正七角形之排列，以使增加 照光均勻度。 本創作之研磨機中，該研磨機較佳可用於研磨一選自 由.石反化石夕晶圓、石夕晶圓、氮化録晶圓、氧化紹晶圓、所 組成之群組。亦即’待研磨件可為碳化♦晶圓、石夕晶圓、 氮化鎵晶圓、氧化鋁晶圓、或其他半導體基材。 _本創作之研磨機中，紫外光照光單元較佳可為一發光 二極體（LED，Light Emitting心㈣單元。紫外光照光單元 热特別限制，只要可發出紫外光即可。 7 M41^644 本創作之研磨機中，控制模組較佳可控制承載台㈣ 轉it並且，控制模組較佳可控制紫外光照光單元使 "發出紫外光，亦'即，控制紫外光照光單元之開關。此外， 控制模組較佳亦可控制紫外光照光單元所發出之紫外光之 照度(或’強度)、及/或時間，使可依照需求調整化學反應 速率、時間等。 一 本創作之研磨機中，當待研磨件配置於研磨墊上而 進行研磨時，研磨漿料係流至待研磨件與研磨墊之間。而 照射至研磨漿料之紫外光係可使研磨漿料進行、 或加強化學反應。 本創作之研磨機中，上述研磨漿料之成份較佳可包括 選自由.過氧化氫、硝酸、峨酸鉀、鐵氰化卸、硫酸姉、 及其混合所組成之群組。研磨漿料之成份較佳可更包括有 研磨顆粒，研磨顆粒之材質較佳可選自由：氧化鋁、二氧 夕氧化鈽、氧化錯、及其混合所組成之群組。此外， 研磨顆粒之粒徑較佳可為“爪至咒如爪之間。 本創作之研磨機中，承載台較佳係為圓盤狀，且承载 台之材質較佳可選自由：鋁、不繡鋼、鈦及其合金所組成 之群組。該承載台之貫穿孔之直徑較佳可為1〇〇^至 1 50mm，可視使用需求調整。本創作中承載台係用以支 撐研磨墊，且承栽台與旋轉單元連接，使可旋轉而進行研 磨。承載台之貫穿孔係用以使紫外光通過，因此貫穿孔之 直徑以及分布密度需視使用需求調整。 M419644 本創作之研磨機，較佳可更包括一基板支承架，係配 至於該研磨墊之上，當一待研磨件配置於研磨墊上時，該 基板支承架係配置於待研磨件之上。而待研磨件係藉由如 吸著之方法吸著於支承架下方。 藉此，本創作之研磨機中，由於該研磨墊之材質係為 - 透光材質，且承載台具有複數貫穿孔，因此設置於承載台 下方之紫外光照光單元方可發出紫外光，並使紫外光穿過 該承載台之貫穿孔，而直接照射至該研磨漿料。如此，於 • 研磨機操作過程中（化學機械研磨進行中），紫外光可直接 照射至研磨漿料與待研磨件之接觸面（而不是間接照射）， 提昇化學機械研磨效率，以及使化學機械研磨加速進行。 【實施方式】 [實施例1 ] 請參考圖2及圖3，其係本創作之研磨機2，其包括： 一承載台22 ’係具有八個貫穿該承載台22之貫穿孔22 1 ; 一 # 旋轉單元23，係與該承載台22連接，以使該承載台22旋轉； 研磨墊21，係配至於該承載台22上，且該研磨墊21之材 質係為玻璃；研磨漿料供應單元24，係提供一研磨衆料27 至該研磨墊21表面；八個紫外光照光單元25，係配至於該 承載台22下；三個檔止件28，係配置於待研磨件3之一側； 以及一控制模組26，係分別與該旋轉單元23及該紫外光照 光單元25連接；其中’該紫外光照光單元25係發出一紫外 9 M419644 光’且該紫外光係穿過該承載台22之貫穿孔2 1，而照射至 該研磨漿料27。 本實施例中，待研磨件3為碳化矽基板，所使用之研 磨漿料27之成份係包括：過氧化氫、氧化鋁研磨顆粒（平均 直徑約為lOOnm)等。承載台22之材質為鋁，其中所形成之 貫穿孔之直徑約為80mm;研磨墊21之材質為玻璃，厚度為 50mm;並且’紫外光照光單元25為發光二極體單元。控制 模組26可控制承載台22之轉速、紫外光照光單元25之開 關、紫外光照光單元25之照度、以及紫外光照光單元25之 照射時間。 當使用本實施例之研磨機2進行研磨時，研磨漿料供 應單元24將研磨漿料27滴至研磨墊21上方，研磨漿料27會 流至研磨墊21及研磨件3之間。旋轉單元23使承載台22及研 磨塾21旋轉，但位於承載台22下方之紫外光照光單元乃係 固定不動。當貫穿孔221移動至紫外光照光單元25上方時’ 紫外光則穿過貫穿孔2丨以及透光材質的研磨墊21，而照射 至該研磨漿料27。 藉此，本創作之研磨機申，設置於承載台22下方之紫 外光照光單元25所發出之紫外光可穿過承載台22之貫穿孔 221 ’而直接照射至研磨漿料27。如此，於研磨機2操作過 程中（化學機械研磨進行中），紫外光可「直接」照射至研 料27與待研磨件3之接觸面，而不是間接照射，因此可 提昇化學機械研磨效率，以及使化學機械研磨加速進行。 [實施例2] 本貫施例之研磨機2與實施例i之研磨機2於構造上大 致相同，但不同處在於，如圖4所示，本實施例之研磨機2 中承載台22之貫穿孔221直徑較小（約40mm)、且數目較 多。因此，可使研磨進行時（承載台22旋轉時），承載台22 下方束外光照光單元25所發出之紫外光更容易照射至上方 的研磨漿料27。 综上所述，由於習知之研磨機未裝設有紫外光照光單 元因此無法藉由光照提升研磨效率。此外，即使於習知 之研磨機中加裝紫外光照光單元於研磨墊上方，仍無法使 务、外光直接」照射至研磨漿料與待研磨件之接觸面，因 此照射紫外光之效率有限，對於化學機械研磨的效率仍無 法大幅提升。 然而，本創作之研磨機中，由於該研磨墊之材質係為 透光材質，且承載台具有複數貫穿孔，因此設置於承載台 下方之紫外光照光單元所發出之紫外光可穿過承載台之貫 穿孔，而直接照射至研磨漿料。如此，於研磨機操作過程 中（化學機械研磨進行中），紫外光可直接照射至研磨漿料 與待研磨件之接觸面（而不是間接照射，例如反射），因此 可確實達到提昇化學機械研磨效率，以及加快化學機械研 磨速率的效果。 上述實施例僅係為了方便說明而舉例而已，本創作所 主張之權利範圍自應以中請專利範圍所述為準而非僅限 於上述實施例。 、 M419644 【圖式簡單說明】 圖1係習知化學機械研磨所用之研磨機示意圖。 圖2係本創作實施例1之研磨機示意圖。 圖3係本創作實施例1之研磨機之爆炸圖。 圖4係本創作實施例2之研磨機之爆炸圖。 【主要元件符號說明】 1研磨機 1 〇晶圓 221貫穿孔 23旋轉單元 Η研磨势 12承載台 13支承架 14研磨漿料供應單元 研磨機 21研磨塾 22承裁台 24研磨漿料供應單元 25紫外光照光單元 2 6控制模組 27研磨漿料 28檔止件 3 待研磨件 12M419644 V. New description: [New technical field] This work is about a grinder, especially a grinder with ultraviolet light irradiation unit and suitable for chemical mechanical polishing (Chemica丨Meehanieal Polishing; CMP). [Prior Art] In the development of the semiconductor industry, the chemical mechanical polishing process is a preferred method for polishing or polishing a + conductor substrate. Chemical Mechanical Polishing, or Chemical Mechanics, is a chemical polishing agent (ie, a polishing slurry) that is ground on a polishing pad of a grinder. The action of the object to be polished (for example, wafer) is to flatten the dielectric layer and the metal layer on the member to be polished to be fully planarized to provide the next layer of circuit formation, thereby achieving three-dimensional wiring or multilayer wiring. Increase the pattern density while reducing the defect density and improving the process yield. In the field of semiconductor technology, chemical mechanical polishing using nanotechnology is currently the most effective method for achieving wafer surface flattening. The main factors affecting the chemical mechanical polishing efficiency include: the rotational speed of the wafer and the grinding crucible, the chemical composition of the grinding and grinding particles, the polishing temperature, the material of the polishing pad, and the surface roughness of the polishing pad. As shown in FIG. 1 , it is a conventional chemical mechanical grinding mill 1 which comprises a grinding wheel, a support frame 13 , a bearing table 12 , a grinding (4) supply M419644 single weir 14 , and a rotating unit (not shown). ) and other components. The polishing pad η is disposed above the load σ12 and is rotatable by the rotation unit. Generally, the material of the polishing pad 11 is usually an opaque material (for example, polyamine methacrylate) and the carrier 12 is made of a metal material. It is placed under the support frame 13. The support frame pushes the wafer 1 in the direction of the grind mark 11. The abrasive slurry supply unit 丨4 provides a polishing slurry, and the abrasive slurry flows between the wafer i 〇 and the polishing 塾1 i. The abrasive slurry generally contains a chemical material that chemically dissolves the wafer 10 and an abrasive material that physically removes the surface portion of the wafer 10. However, conventional chemical mechanical polishing still does not achieve very good results, and sometimes there is a case where the chemical material reacts well with the object to be polished to cause a flat abrasive surface. Because & 'If you can use the illumination method to improve the reactivity of the polishing slurry with the object to be polished, it can not only improve the grinding effect of chemical mechanical polishing, but also shorten the grinding time and provide the factory production. [New content] The main purpose is to provide a grinding machine, preferably for chemical mechanical polishing, which can provide ultraviolet light irradiation during the grinding process to enhance the grinding effect, and can also shorten the production rate of the m-plant production. 1: The mill 'includes ···the carrying platform' has a plurality of through-holes of the carrying platform; the rotating unit is connected with the carrying platform to rotate the carrying platform; a grinding potential, matching The material of the polishing pad is a light transmissive material; the abrasive material supply unit 俜M419644 provides a polishing slurry to the surface of the poem; at least the ultraviolet light is coupled to the carrier; And a control module, which is respectively connected to the ultraviolet light unit and connected to the ultraviolet light unit, wherein the ultraviolet light emits ultraviolet light, and the ultraviolet light passes through the carrier. The holes are irradiated to the polishing slurry. In the grinding machine of the present invention, since the material of the polishing crucible is a light transmissive material, and the carrying platform has a plurality of through holes, the ultraviolet light emitted by the external illumination unit disposed under the carrying platform can pass through the carrying platform. The through holes are directly irradiated to the polishing slurry. In this way, during the operation of the grinder (in the process of chemical mechanical polishing), the ultraviolet light can be directly irradiated to the contact surface of the grinding (4) and the member to be polished (instead of indirect irradiation, such as reflection), improving the chemical mechanical polishing efficiency, and making the chemical Mechanical grinding is accelerated. The conventional grinding machine is not equipped with an ultraviolet light unit, so the polishing efficiency cannot be improved by illumination. In addition, even if the external light unit is placed above the polishing pad in the conventional grinding machine, the ultraviolet light cannot be directly "irradiated" to the contact surface of the polishing slurry and the member to be polished, so that the efficiency of irradiating the ultraviolet light is limited. The efficiency of chemical mechanical polishing cannot be greatly improved. However, the grinding machine of the present invention can directly irradiate ultraviolet light to the contact surface of the polishing slurry and the workpiece to be polished, so that the effect of improving the chemical mechanical polishing efficiency and accelerating the chemical mechanical polishing rate can be achieved. The grinding machine of the present invention preferably further includes a stopper which is disposed on the grinding ram. When the workpiece to be polished is disposed on the grinding ram, the stopper is disposed on one side of the workpiece to be polished. The stopper does not move with the rotation of the stage, so that the piece to be polished can be stopped in one place, so that the piece to be polished does not flow clockwise or counterclockwise with the rotating material. The number of stops used can be adjusted as needed. Compared with the support frame used in the conventional grinding machine (as shown in Fig. 1, it is disposed above the workpiece to be polished, and the workpiece is fixed by suction). The structure is relatively simple 'operation is also convenient. In the grinding machine of the present invention, the polishing pad is preferably in the shape of a disk, and the material of the polishing pad is preferably selected from the group consisting of i: glass, quartz, and oxidized. The thickness of the polishing pad may preferably be from 5 mm to 80 mm, and the thickness of the polishing pad may decrease with the number of uses. In the grinder of the present invention, the wavelength of the ultraviolet light is preferably from 100 nm to 400 nm. In the grinder of the present invention, the ultraviolet light unit is preferably arranged in a geometric shape. For example, when the number of ultraviolet illumination light units is six, they may exhibit a positive hexagonal arrangement with each other; #When the number of ultraviolet illumination light units is seven, 'they may exhibit a regular heptagon arrangement with each other to increase Illumination uniformity. In the grinding machine of the present invention, the grinding machine is preferably used for grinding a group selected from the group consisting of a stone anti-fossil wafer, a stone wafer, a nitride wafer, and a wafer. That is, the material to be polished may be a carbonized wafer, a stone wafer, a gallium nitride wafer, an aluminum oxide wafer, or other semiconductor substrate. In the grinding machine of the present invention, the ultraviolet light unit may preferably be a light emitting diode (LED), and the heat of the ultraviolet light unit is particularly limited as long as ultraviolet light can be emitted. 7 M41^644 In the grinding machine of the present invention, the control module preferably controls the carrying platform (4) to turn it, and the control module preferably controls the ultraviolet light unit to emit ultraviolet light, that is, the switch for controlling the ultraviolet light unit. In addition, the control module preferably also controls the illuminance (or 'intensity", and/or time of the ultraviolet light emitted by the ultraviolet light unit, so that the chemical reaction rate, time, etc. can be adjusted according to requirements. In the machine, when the workpiece to be polished is disposed on the polishing pad for grinding, the polishing slurry flows between the workpiece to be polished and the polishing pad, and the ultraviolet light irradiated to the polishing slurry can cause the polishing slurry to be carried out or strengthened. Chemical reaction. In the grinding machine of the present invention, the composition of the polishing slurry preferably includes a group selected from the group consisting of hydrogen peroxide, nitric acid, potassium citrate, ferricyanide, barium sulfate, and mixtures thereof. Preferably, the composition of the abrasive slurry further comprises abrasive particles, and the material of the abrasive particles is preferably selected from the group consisting of alumina, dioxin, oxidization, and mixtures thereof. The particle size is preferably "claw to curse between the claws. In the grinding machine of the present invention, the carrying table is preferably disc-shaped, and the material of the carrying platform is preferably free: aluminum, stainless steel, A group consisting of titanium and its alloy. The diameter of the through hole of the carrying platform is preferably from 1 〇〇 to 1 50 mm, which can be adjusted according to the needs of use. In the present invention, the bearing platform is used to support the polishing pad and is supported. The table is connected to the rotating unit to be rotatable and ground. The through hole of the carrying table is used to pass the ultraviolet light, so the diameter and distribution density of the through hole are adjusted according to the use requirements. M419644 The grinding machine of the present invention is preferably Furthermore, a substrate support frame is attached to the polishing pad. When a workpiece to be polished is disposed on the polishing pad, the substrate support frame is disposed on the workpiece to be polished. Method of absorbing Below the carrier. Therefore, in the grinding machine of the present invention, since the material of the polishing pad is a light-transmitting material, and the carrying platform has a plurality of through holes, the ultraviolet light unit disposed under the carrying platform can emit ultraviolet light. Light, and the ultraviolet light is passed through the through hole of the carrying platform, and directly irradiated to the polishing slurry. Thus, during the operation of the grinder (in the process of chemical mechanical polishing), the ultraviolet light can be directly irradiated to the polishing slurry. The contact surface with the member to be polished (instead of indirect irradiation), the chemical mechanical polishing efficiency is improved, and the chemical mechanical polishing is accelerated. [Embodiment] [Example 1] Please refer to FIG. 2 and FIG. a grinder 2 comprising: a carrier 22' having eight through holes 22 1 extending through the carrier 22; a #rotating unit 23 coupled to the carrier 22 for rotating the carrier 22; The mat 21 is attached to the loading table 22, and the material of the polishing pad 21 is glass; the polishing slurry supply unit 24 provides a polishing mass 27 to the surface of the polishing pad 21; The unit 25 is disposed under the loading platform 22; three stops 28 are disposed on one side of the workpiece 3 to be polished; and a control module 26 is respectively associated with the rotating unit 23 and the ultraviolet light unit 25; wherein the ultraviolet light unit 25 emits an ultraviolet 9 M419644 light and the ultraviolet light passes through the through hole 2 1 of the stage 22 to be irradiated to the polishing slurry 27. In the present embodiment, the member to be polished 3 is a tantalum carbide substrate, and the components of the polishing slurry 27 used include hydrogen peroxide, alumina abrasive particles (having an average diameter of about 100 nm) and the like. The material of the carrier 22 is aluminum, wherein the through hole is formed to have a diameter of about 80 mm; the polishing pad 21 is made of glass and has a thickness of 50 mm; and the ultraviolet light unit 25 is a light emitting diode unit. The control module 26 controls the rotational speed of the stage 22, the switch of the ultraviolet illumination unit 25, the illumination of the ultraviolet illumination unit 25, and the illumination time of the ultraviolet illumination unit 25. When the grinding is performed using the grinder 2 of the present embodiment, the polishing slurry supply unit 24 drops the polishing slurry 27 onto the polishing pad 21, and the polishing slurry 27 flows between the polishing pad 21 and the polishing member 3. The rotating unit 23 rotates the stage 22 and the grinding boring 21, but the ultraviolet light unit located below the stage 22 is stationary. When the through hole 221 is moved over the ultraviolet light unit 25, ultraviolet light passes through the through hole 2 and the polishing pad 21 of the light transmitting material, and is irradiated to the polishing slurry 27. Accordingly, in the present invention, the ultraviolet light emitted from the ultraviolet light unit 25 disposed under the stage 22 can be directly irradiated to the polishing slurry 27 through the through hole 221' of the stage 22. Thus, during the operation of the grinder 2 (in the process of chemical mechanical polishing), the ultraviolet light can be "directly" irradiated to the contact surface of the spun material 27 and the member to be polished 3, instead of indirect irradiation, thereby improving the chemical mechanical polishing efficiency. And accelerate the chemical mechanical polishing. [Embodiment 2] The grinder 2 of the present embodiment is substantially the same in construction as the grinder 2 of the embodiment i, but the difference is that, as shown in Fig. 4, the stage 22 of the grinder 2 of the present embodiment The through hole 221 has a small diameter (about 40 mm) and a large number. Therefore, when the polishing is progressed (when the stage 22 is rotated), the ultraviolet light emitted from the outer beam light unit 25 under the stage 22 is more easily irradiated onto the upper polishing slurry 27. In summary, since the conventional grinder is not equipped with an ultraviolet light unit, the polishing efficiency cannot be improved by illumination. In addition, even if the ultraviolet light unit is added to the polishing pad in the conventional grinding machine, the external light can not be directly irradiated to the contact surface of the polishing slurry and the workpiece to be polished, so the efficiency of irradiating the ultraviolet light is limited. The efficiency of chemical mechanical polishing cannot be greatly improved. However, in the grinding machine of the present invention, since the material of the polishing pad is a light-transmitting material, and the carrying platform has a plurality of through holes, the ultraviolet light emitted from the ultraviolet light unit disposed under the carrying table can pass through the carrying platform. The through holes are directly irradiated to the polishing slurry. In this way, during the operation of the grinder (in the process of chemical mechanical polishing), the ultraviolet light can be directly irradiated to the contact surface of the polishing slurry and the member to be polished (instead of indirect irradiation, such as reflection), so that the chemical mechanical polishing can be surely achieved. Efficiency, and the effect of accelerating the rate of chemical mechanical polishing. The above-described embodiments are merely examples for the convenience of the description, and the scope of the claims is based on the scope of the patent application and is not limited to the above embodiments. M419644 [Simple description of the drawing] Fig. 1 is a schematic view of a grinding machine used in conventional chemical mechanical polishing. Fig. 2 is a schematic view of the grinder of the creation example 1 of the present invention. Fig. 3 is an exploded view of the grinder of the creation example 1 of the present invention. Figure 4 is an exploded view of the grinder of the second embodiment of the present invention. [Main component symbol description] 1 Grinding machine 1 〇 Wafer 221 through hole 23 Rotating unit Η Grinding potential 12 Carrier table 13 Support frame 14 Polishing slurry supply unit Grinding machine 21 Grinding 塾 22 Undertaking table 24 Grinding slurry supply unit 25 UV illumination unit 26 control module 27 polishing slurry 28 stop 3 to be ground 12