M419220 五、新型說明： 【新型所屬之技術領域】 本創作為一種晶圓清潔裝置，尤指一種在晶 圓傳送盒（Front Opening Unified Pod, FOUP)中， 利用負壓導引盒内氣流由排氣端排出，加強晶圓 洗潔的負壓裝置。 【先前技術】 傳統的晶圓清潔裝置係將氮氣注入晶圓傳送 盒以清潔晶圓，由於晶圓傳送盒非為完全氣密之 容器，因此在晶圓清潔的過程中，注入晶圓傳送 盒的氮氣，常由晶圓傳送盒上的缝隙漏出，使排 出氮氣的風道不穩定，無法有效清潔晶圓，而降 低晶圓之良率。 更甚者，注入晶圓傳送盒的氣氣可能與晶圓 上的汙染物與酸氣混合後，透過縫隙飄散至無塵 室内，進而汙染環境，影響工作人員之健康與其 他設備之正常操作。 4 【新型内容】 因此’為了解決上述門 , I間喊，本創作之目的之 疋在k供一種晶圓清:里 —r M / tan 吗β冻裝置，可降低晶圓上 的汙染物溢散至無塵室，而汗染工作人員與設備。 本創作之目的之―，可增加日日日®清潔裝置的 清洗能力。 本創作一貫施例提供了 —種晶圓清潔裝置， 包含一晶圓傳送盒（Front 0pening Unified p〇d， FOUP)，用以置放複數個晶圓；以及一清潔裝置， 用以在晶圓傳送盒中產生氣體風道，以清潔晶 圓；其中’清潔裝置提供一正壓力之氣體至晶圓 傳送盒’且在排氣端提供負壓導引，以形成氣體 風道，抽取晶圓傳送盒内之一洗淨氣體，並排放 至工廠的排氣系統中。本創作一實施例提供了一 種利用晶圓傳送盒之晶圓清潔裝置，包含：一支 撐平台’具有一第一氣囊墊片與一第二氣囊墊 片；一晶圓傳送盒，具有一腔室、一第一連結部、 以及一第二連結部，第一連結部與第二連結部分 別設置於腔室之底部，當晶圓傳送盒置放於支撐 平台時’第一氣囊墊片與第一連結部連結，第二 氣囊墊片與第二連結部連結；以及，一負壓產生 M419220 '裝置’具有—第—進氣管路與-第-排氣管 路:進氣管路連結該第一氣囊墊月用以注入-第 々氣體至腔至’以清潔腔室之-晶圓；第-排氣 S路連結第—氣囊墊片，並產生一負壓區，使腔 至内之第一氣體由一正壓區流向負S區以排出第 一氣體。 【實施方式】 請參閱第1圖’第i圖係本創作晶圓清潔裝 置之一實施例示意圖。如第丨圖所示，晶圓清潔 裝置100包含支撐平台101、晶圓傳送盒（Fr〇ntM419220 V. New Description: [New Technology Field] This is a wafer cleaning device, especially in the Front Opening Unified Pod (FOUP), which uses the airflow in the negative pressure guide box. The gas end discharges and strengthens the vacuum cleaning device for wafer cleaning. [Prior Art] A conventional wafer cleaning device injects nitrogen into a wafer transfer cassette to clean the wafer. Since the wafer transfer cassette is not a completely airtight container, the wafer transfer cassette is injected during the wafer cleaning process. Nitrogen, which is often leaked through the gaps in the wafer transfer box, makes the airflow path of the nitrogen gas unstable, which cannot effectively clean the wafer and reduce the yield of the wafer. What's more, the gas injected into the wafer transfer box may be mixed with the contaminants and sour gas on the wafer, and then dispersed into the clean room through the gap, thereby polluting the environment and affecting the health of the staff and the normal operation of other equipment. 4 [New content] Therefore, in order to solve the above-mentioned door, I shouted, the purpose of this creation is to provide a wafer clearing: in-r M / tan? beta freezing device, which can reduce the contamination on the wafer. Dissipated to the clean room, and sweat stained staff and equipment. For the purpose of this creation, the cleaning capacity of the day/day® cleaning unit can be increased. This creation has consistently provided a wafer cleaning apparatus comprising a wafer transfer box (FOUP) for placing a plurality of wafers; and a cleaning device for the wafer A gas duct is formed in the transfer box to clean the wafer; wherein the 'cleaning device provides a positive pressure gas to the wafer transfer cassette' and provides a negative pressure guide at the exhaust end to form a gas passage, and extract the wafer transfer One of the cartridges purges the gas and discharges it into the exhaust system of the plant. An embodiment of the present invention provides a wafer cleaning apparatus using a wafer transfer cassette, comprising: a support platform having a first airbag spacer and a second airbag spacer; and a wafer transfer cassette having a chamber a first connecting portion and a second connecting portion, the first connecting portion and the second connecting portion are respectively disposed at the bottom of the chamber, and when the wafer transfer box is placed on the supporting platform, the first airbag gasket and the first a connecting portion is coupled, the second airbag gasket is coupled to the second connecting portion; and a negative pressure generating M419220 'device' has a -first intake line and a -first exhaust line: the intake line is coupled to the The first airbag cushion is used to inject a -th gas to the cavity to 'clean the chamber-wafer; the first-exhaust S-way connects the first-airbag gasket, and generates a negative pressure zone to make the cavity inward The first gas flows from a positive pressure zone to a negative S zone to discharge the first gas. [Embodiment] Please refer to Fig. 1 'i' for a schematic diagram of an embodiment of the present wafer cleaning apparatus. As shown in the figure, the wafer cleaning apparatus 100 includes a support platform 101 and a wafer transfer cassette (Fr〇nt
Opening Unified Pod, FOUP)1〇2、以及負壓產生清 潔裝置103。 在本實施例中，支撐平台101具有氣囊墊片 l〇la與101b’支撐平台101係用以置放晶圓傳送 盒102。晶圓傳送盒1 〇2具有一腔室s、連結部 102a、以及102b。連結部l〇2a與i〇2b分別設於 腔室S之底部’當晶圓傳送盒1〇2置放於支撐平 台101時’氣囊墊片101 a與連結部1 〇2a連社， 氣囊墊片l〇lb與連結部102b連結。晶圓傳送盒 102内設有複數個插槽102c，係用以放置晶圓， 6 M419220 使晶圓能在自動化設傷進行運送或清潔。 負壓產生清潔裝置103，具有進氣管路1〇4a 與排氣官路104b，進氣管路104a連結氣囊墊片 101a用以注入氣體G1至腔室s，以清潔腔室s 内的晶圓。排氣管路l〇4b連結氣囊墊片1〇lb, 並產生一負壓區NI>，使氣體G1由一正壓區pp φ 流經腔室S後’再流向負壓區NP以排出氣體G卜 換言之，負壓產生清潔裝置1〇3提供一正壓力之 氣體至晶圓傳送盒102,且提供一負壓引力至晶 圓傳送盒102 ’以形成氣體風道。 在本創作之一實施例中，腔室s内之氣體壓 力係屬於正壓區PP管路，而負壓區Np之壓力小 於正壓區pp，故氣體01會由壓力較高之正壓區 φ PP流向壓力較低之負壓區NP，故氣體G1可由進 氣管路104a流入腔室s ’且會連帶將吸附於置放 於插槽103c上晶圓之汙染物、濕氣、氧氣與雜質 (例如粒子（Particle))，一併流至負壓區Np，以達 到4潔晶圓之功效。 在本創作一實施例中，氣體G1用來沖刷晶圓 上的汙染物、微氧與水氣，以清潔晶圓，且氣體 G1可為向純氮氣（Purity N2, PN2)所實現，當然， 7 M419220 本創作不係於此，其他實施例可採用其他目前現 有或未來發展出之氣體或物質來實施。 在此請注意，本實施例雖繪示支撐平台1 〇 1 具有氣囊墊片101a與101b，且晶圓傳送盒102 亦僅繪示連結部1〇2&與i〇2b，但本創作不應以 此為限’在另一實施例中’晶圓傳送盒可包含複 數個連結部、支撐平台可包含複數個氣囊墊片、 及負壓產生清潔裝置可包含複數個進氣管路與複 數個排氣管路。當然，連結部、氣囊塾片、進氣 與排氣管路的數目可相同或不同，此數目可由設 計者決定。例如，晶圓傳送盒可包含四個連結部， 支樓平台可包含四個氣囊墊片，而負壓產生清潔 裝置可適用二個進氣管路與二個排氣管路、或一 個進氣管路與一個排氣管路。 "月參閱第2圖，第2圖係本創作晶圓清潔裝 置之一實施例示意圖。如第2圖所示，晶圓清潔 裝置200與晶圓清潔裝置1〇〇之差異在於，負壓 產生清潔裝置203更包含負壓產生單元23。 在本實施例中，負壓產生單元23連結至排氣 官路104b，負壓產生單元η可以產生負壓，並 使氣體G1由腔室S流向負壓區Np與工廠排氣系 8 練’並將吸附於晶圓上之汗染物、濕氣、氧氣與 雜質，透過排氣管路104b_併流至負壓區NP， 以達到清潔晶圓之功效。 請參閱第3A圖，第3A圖係本創作晶圓清潔 駛置之一實施例示意圖。如第3 A圖所示，晶圓清 潔裝置300與晶圓清潔裝置2〇〇之差異在於負 壓產生清潔裝置303更包含進氣調整單元34、偵 剛單元35、以及負壓調整單元36。 進氣調整單元34連結至進氣管路3〇4a。進氣 調整單元34用以調整氣體G1之流量或流速。由 於晶圓置放於晶圓傳送盒之插槽302c内，一實施 例’插槽3 02c是沿一方向D水平堆疊起來，若流 進腔室S内之氣體G1是定量與定速的狀況下， 則可能會使得置放於腔室S頂部的晶圓無法受到 氣體G1喷刷’故會有部份死角產生，而降低清潔 效果。 換言之，透過進氣調整單元34來調整流入腔 室S之氣體G1之流量或流速，搭配排氣端的引 力，可以降低腔室S内的死角產生，使每一晶圓 都能受到氣體G1喷刷，而清潔附於晶圓上的汙染 M419220 偵測單元35用以偵測進氣管路3〇4a之流量 或流速，並產生一偵測訊號Ds ;負壓調整單元 36耦接至負壓產生單元33。負壓調整單元“具 有進氣管路36a、以及排氣管路36b，利用注入氣 體G2與排出氣體02所產生之壓力差與流量，以 調整負塵區NP之壓力。 一實施例’負壓調整單元36調整負壓區Np 之壓力與排氣管路304b之流量或流速，可依據至 少一預設條件來調整。例如，一條件：調整時須 維持腔室S之壓力處於正壓狀態。因為腔室δ之 壓力若處於負壓，則可能導致避免晶圓傳送盒3〇2 向内凹陷而破壞，故腔室S之壓力維持於正壓可 以避免此種情況發生。 一實施例’負壓調整單元36調整方式，可包 含有粗調與微調或兩者混用之方式。 一實施例，排氣管路304a之流量可為進氣管 路304b之流量之一預設比值。例如’百分之九 十’但本創作不以此為限，可依據使用者之需求 調整。 在本實施例中，負壓產生清潔裝置303包含 一比例積分微分控制器（PID)303a，比例積分微分 M419220 控制器37耦接至進氣調整單元34與負壓調整單 元36，係依據進氣管路3〇4a與排氣管路3〇4b之 流1，進而控制進氣管路36a與排氣管路36b之 物理量之比例。請同時參考第圖，第3B圖 係本創作晶圓清潔裝置之負壓調整單元一實施例 不意圖。在本實施例中，負壓調整單元36包含一 擴散室37、一膨脹室38 '以及一真空口 39。其 中，擴散室37與進氣管路36a，膨脹室38與排 氣管路36b連結。 當氣體G2經由進氣營路36&被壓縮注入擴散 至37，因氣體G2咼速注入擴散室37，使擴散室 37的壓力變小而於進氣口與擴散室間產生一壓力 差，真空口 39吸入一空氣A以產生負壓區Np， 並由透過澎脹室38將空氣A與氣體⑺排出。 在本創作一實施例中，氣體G2可為普通氮氣Opening Unified Pod, FOUP) 1, 2, and a negative pressure generating cleaning device 103. In the present embodiment, the support platform 101 has airbag spacers l〇la and 101b' to support the platform 101 for placing the wafer transfer cassette 102. The wafer transfer cassette 1 〇 2 has a chamber s, joint portions 102a, and 102b. The connecting portions 10a and 2b are respectively disposed at the bottom of the chamber S. When the wafer transfer cassette 1〇2 is placed on the support platform 101, the airbag spacer 101a is connected to the connecting portion 1〇2a, and the airbag cushion is attached. The sheet 10b is coupled to the connecting portion 102b. The wafer transfer cassette 102 is provided with a plurality of slots 102c for placing wafers, and the 6 M419220 enables the wafer to be transported or cleaned in an automated setting. The negative pressure generating cleaning device 103 has an intake pipe 1〇4a and an exhaust gas path 104b. The intake pipe 104a is coupled to the airbag gasket 101a for injecting gas G1 into the chamber s to clean the crystal in the chamber s. circle. The exhaust line 104b connects the airbag gasket 1〇1b and generates a negative pressure zone NI>, so that the gas G1 flows through the chamber S from a positive pressure zone pp φ and then flows to the negative pressure zone NP to discharge the gas. In other words, the negative pressure generating cleaning device 1〇3 supplies a positive pressure gas to the wafer transfer cassette 102 and provides a negative pressure attraction to the wafer transfer cassette 102' to form a gas passage. In one embodiment of the present invention, the gas pressure in the chamber s belongs to the PP line in the positive pressure zone, and the pressure in the negative pressure zone Np is less than the positive pressure zone pp, so the gas 01 will be a positive pressure zone with a higher pressure. Φ PP flows to the lower pressure NP of the lower pressure, so the gas G1 can flow into the chamber s ' from the intake line 104a and will be attached to the wafers deposited on the wafer 103c with contaminants, moisture, oxygen and Impurities (such as particles) flow to the negative pressure region Np to achieve the effect of 4 clean wafers. In an embodiment of the present invention, the gas G1 is used to wash the contaminants, micro-oxygen and moisture on the wafer to clean the wafer, and the gas G1 can be realized to pure nitrogen (Purity N2, PN2), of course, 7 M419220 This creation is not here, and other embodiments may be implemented using other gases or materials currently available or developed in the future. Please note that this embodiment shows that the support platform 1 〇1 has the airbag spacers 101a and 101b, and the wafer transfer box 102 only shows the joints 1〇2& and i〇2b, but this creation should not In this embodiment, 'the wafer transfer cassette may include a plurality of joints, the support platform may include a plurality of airbag gaskets, and the negative pressure generating cleaning device may include a plurality of intake lines and a plurality of Exhaust line. Of course, the number of joints, balloon flaps, and intake and exhaust lines may be the same or different, and this number may be determined by the designer. For example, the wafer transfer cassette may include four joints, the branch floor platform may include four airbag gaskets, and the negative pressure generating cleaning device may be applied to two intake lines and two exhaust lines, or one intake air. Pipeline and an exhaust line. "Monthly Referring to Figure 2, Figure 2 is a schematic diagram of one embodiment of the present wafer cleaning apparatus. As shown in Fig. 2, the wafer cleaning apparatus 200 differs from the wafer cleaning apparatus 1 in that the negative pressure generating cleaning apparatus 203 further includes a negative pressure generating unit 23. In the present embodiment, the negative pressure generating unit 23 is coupled to the exhaust gas path 104b, and the negative pressure generating unit η can generate a negative pressure, and the gas G1 flows from the chamber S to the negative pressure region Np and the factory exhaust system 8 The sweat stains, moisture, oxygen and impurities adsorbed on the wafer are passed through the exhaust line 104b_ to the negative pressure zone NP to achieve the effect of cleaning the wafer. Please refer to Figure 3A. Figure 3A is a schematic diagram of one embodiment of the wafer cleaning operation of the present invention. As shown in Fig. 3A, the difference between the wafer cleaning device 300 and the wafer cleaning device 2 is that the negative pressure generating cleaning device 303 further includes an air intake adjusting unit 34, a detecting unit 35, and a negative pressure adjusting unit 36. The intake air adjustment unit 34 is coupled to the intake line 3〇4a. The intake air adjustment unit 34 is for adjusting the flow rate or flow rate of the gas G1. Since the wafer is placed in the slot 302c of the wafer transfer cassette, an embodiment 'slot 032c is horizontally stacked in one direction D. If the gas G1 flowing into the chamber S is quantitative and constant speed Underneath, the wafer placed on the top of the chamber S may not be sprayed by the gas G1, so that some dead angles are generated, and the cleaning effect is reduced. In other words, the flow rate or flow rate of the gas G1 flowing into the chamber S is adjusted by the intake air adjusting unit 34, and the gravitational force of the exhaust end can reduce the dead angle in the chamber S, so that each wafer can be sprayed by the gas G1. And cleaning the contaminated M419220 detecting unit 35 attached to the wafer for detecting the flow rate or flow rate of the intake line 3〇4a, and generating a detection signal Ds; the negative pressure adjusting unit 36 is coupled to the negative pressure generating unit Unit 33. The negative pressure adjusting unit "has an intake line 36a and an exhaust line 36b, and uses a pressure difference and a flow rate generated by the injected gas G2 and the exhaust gas 02 to adjust the pressure of the negative dust region NP." The adjusting unit 36 adjusts the pressure of the negative pressure zone Np and the flow rate or flow rate of the exhaust line 304b, and can be adjusted according to at least one preset condition. For example, a condition: the pressure of the chamber S must be maintained in a positive pressure state during the adjustment. If the pressure of the chamber δ is at a negative pressure, the wafer transfer cassette 3〇2 may be prevented from being inwardly recessed and destroyed, so that the pressure of the chamber S is maintained at a positive pressure to prevent this from happening. The adjustment mode of the pressure adjustment unit 36 may include coarse adjustment and fine adjustment or a combination of the two. In one embodiment, the flow rate of the exhaust line 304a may be a preset ratio of the flow rate of the intake line 304b. For example, '100 In the present invention, the present invention is not limited thereto, and can be adjusted according to the needs of the user. In the embodiment, the negative pressure generating and cleaning device 303 comprises a proportional integral derivative controller (PID) 303a, and the proportional integral differential M419220 control The controller 37 is coupled to the air intake adjusting unit 34 and the negative pressure adjusting unit 36 according to the flow 1 of the intake line 3〇4a and the exhaust line 3〇4b, thereby controlling the intake line 36a and the exhaust line. The ratio of the physical quantity of 36b. Please refer to the figure at the same time, and FIG. 3B is not intended to be an embodiment of the negative pressure adjusting unit of the present wafer cleaning device. In the embodiment, the negative pressure adjusting unit 36 includes a diffusion chamber 37, An expansion chamber 38' and a vacuum port 39. The diffusion chamber 37 is connected to the intake line 36a, and the expansion chamber 38 is connected to the exhaust line 36b. When the gas G2 is compressed and injected through the intake duct 36& When the gas G2 is idling into the diffusion chamber 37, the pressure of the diffusion chamber 37 is reduced, and a pressure difference is generated between the inlet and the diffusion chamber, and the vacuum port 39 sucks an air A to generate a negative pressure region Np. The inflation chamber 38 discharges the air A and the gas (7). In an embodiment of the present invention, the gas G2 may be ordinary nitrogen.
前技術於一實做中之晶圓傳送盒内相對濕度之 其中’中心點〇為晶圓傳 點7為中心’將晶圓傳送 -¾圖，第4B圖係本創作於 内相對濕度之示意圖。其 送盒之中心點，以中心點 一實做中之晶圓傳送盒 盒畫分為複數個區域進行說明，並可依據其各區 域的相對溼度變化進行判斷各區域是否有無受到 氣體G1噴刷。另外，相對濕度降低係代表此區域 晶圓上所附著的水氣係被氣體G1所喷刷而降低。 在第4A圖中，由於先前技術中的晶圓清潔裝 置不具備有自動可調整進氣之功能，如此一來， 氣體G1只能固定流量或流速對晶圓進行喷刷。但 晶圓傳送盒402A並㈣閉容器，氣體⑴會因不 特定縫隙產生不特定的風道’透過縫隙散漏至無 塵至’故氣體在只有在晶圓傳送盒4〇2 A的特定區 域具有較佳的清潔能力。在本實作為區域i之相 對渔度由42.3%降為26·1%，區域2之相對座度由 42.3%降為38.9%，但區域3〜6、以及中心點了之 相對渔度下降幅度則不明顯，顯示先前技術無法 使所有區域的相對澄度下降。 在此請注意，由於洗淨氣體會從晶圓傳送盒 402Α上的不特定的縫隙漏出使排出氣道⑴的 風道不穩定，無法有效清潔晶圓。只有在區域1 與2的相對濕度有較明顯的下降，亦表示在區域 1與2的晶圓有較佳的清潔效果。 在第4Β圖中，由於本創作中的晶圓清潔裝置 12 具備有自動可調整進氣流量或流速之功能，故區 域1〜6、以及中心點7之相對濕度均下降至20% 左右丄區域2之相對濕度甚至可降低至15 5%， 與先前技術的第4A圖相比較，清潔能力具有大幅 度改善’使各區4的相對濕度明顯下降。故本創 作之利用正壓區氣體G1流向負壓區之概念，使晶 圓傳送里402B此產生穩定的風道，有效降低晶圓 傳送盒術B内氣體⑴由縫隙排出之問題並將 晶圓上的水氣、氧氣與汙染物順利排出工廠排氣 系統中，以達到清潔的效果。 綜上所述，本創作利用導引正壓區氣體流向 負壓區之概念，在晶圓傳送盒中形成可調整之預 T風道，而可控制氣體的流動路徑或喷刷之力 莖，使晶圓上的汗染物能伴隨著氣體由負壓區排 出，有效降低氣體從晶圓傳送盒的縫細散出。另 外，本創作可以調整管路的流量與流速，搭配排 氣端引力，使晶圓能盡可能受到氣體噴刷，以達 到清潔並減少噴刷死角的產生。 【圖式簡單說明】 第1圖係本創作晶圓清潔裝置之一實施例示 13 M419220 意圖。 第2圖係本創作晶圓清潔裝置之一實施例示 意圖。 第3A圖係本創作晶圓清潔裝置之一實施例 示意圖。 第3B圖係本創作晶圓清潔裝置之負壓調整 單元一實施例示意圖。 第4A圖係先前技術於一實做中之晶圓傳送 盒内相對濕度之示意圖。 第4B圖係本創作於一實做中之晶圓傳送盒内 相對濕度之示意圖。【主要元件符號說明】 100〜300 晶圓清潔裝置 101 支撐平台 101a、101b 氣囊墊片 102、 402A、402B 晶圓傳送盒 102a > 102b 連結部 102c ' 302c 插槽 S 腔室 103、 203、303 負壓產生清潔裝置 104a、304a、36a 進氣管路 104b、304b、36b 排氣管路 14 M419220 23 負壓產生單元 34 進氣調整單元 35 偵測單元 36 負壓調整單元 37 擴散室 38 膨脹室 39 真空口 303a 比例積分微 PP 正壓區 NP 負壓區 D 方向 G1 ' G2 氣體 A 空氣 1〜6 區域 0 中心點 15The former technology is used in a real-world wafer transfer box where the 'central point 〇 is the wafer transfer point 7 as the center'. The wafer is transferred -3⁄4, and the 4B is a schematic diagram of the internal relative humidity. . The center point of the box is divided into a plurality of areas by the center of the wafer transfer box, and the relative humidity of each area can be used to determine whether the area is subjected to gas G1. . In addition, the relative humidity reduction means that the water vapor attached to the wafer in this region is lowered by the gas G1. In Fig. 4A, since the prior art wafer cleaning apparatus does not have the function of automatically adjustable intake air, the gas G1 can only spray the wafer at a fixed flow rate or flow rate. However, the wafer transfer cassette 402A and (4) close the container, the gas (1) will generate an unspecified air passage due to the unspecified gap, and the air will leak through the gap to the dust-free position, so the gas is only in the specific area of the wafer transfer cassette 4〇2 A. Has a better cleaning ability. In this real area i, the relative fishing degree decreased from 42.3% to 26.1%, and the relative seat of area 2 decreased from 42.3% to 38.9%, but the relative loss of the area 3~6 and the center point decreased. It is not obvious, showing that the prior art cannot reduce the relative accuracy of all areas. Note here that since the cleaning gas leaks from an unspecified gap in the wafer transfer cassette 402, the air passage of the exhaust air passage (1) is unstable, and the wafer cannot be effectively cleaned. Only the relative humidity in Zones 1 and 2 has a significant drop, which also indicates that the wafers in Zones 1 and 2 have a better cleaning effect. In the fourth drawing, since the wafer cleaning device 12 of the present invention has a function of automatically adjusting the intake air flow rate or the flow rate, the relative humidity of the regions 1 to 6 and the center point 7 are both lowered to about 20%. The relative humidity of 2 can be even reduced to 15 5%, and the cleaning ability is greatly improved as compared with the prior art 4A, which causes the relative humidity of each zone 4 to drop significantly. Therefore, the concept of using the positive pressure zone gas G1 to the negative pressure zone in this creation enables the stable flow of the 402B in the wafer transfer, effectively reducing the problem of the gas in the wafer transfer cassette B (1) being discharged by the slit and the wafer. The water, oxygen and pollutants on the water are smoothly discharged into the exhaust system of the factory to achieve a clean effect. In summary, the present invention utilizes the concept of guiding the gas flow in the positive pressure zone to the negative pressure zone to form an adjustable pre-T air passage in the wafer transfer box, and can control the flow path of the gas or the force stem of the spray. The perspiration on the wafer can be discharged from the negative pressure zone along with the gas, effectively reducing the leakage of gas from the gap of the wafer transfer cassette. In addition, the creation can adjust the flow rate and flow rate of the pipeline, and the gravitational pull of the exhaust end, so that the wafer can be sprayed as much as possible to achieve cleaning and reduce the occurrence of dead angle of the spray. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is an illustration of one embodiment of the present wafer cleaning apparatus. 13 M419220 Intent. Fig. 2 is an illustration of an embodiment of the present wafer cleaning apparatus. Fig. 3A is a schematic view showing an embodiment of the present wafer cleaning apparatus. Fig. 3B is a schematic view showing an embodiment of a negative pressure adjusting unit of the present wafer cleaning apparatus. Figure 4A is a schematic illustration of the relative humidity within a wafer transfer cassette of the prior art. Fig. 4B is a schematic diagram showing the relative humidity in the wafer transfer cassette of the present invention. [Main component symbol description] 100 to 300 wafer cleaning device 101 support platform 101a, 101b airbag spacer 102, 402A, 402B wafer transfer cassette 102a > 102b connection portion 102c ' 302c slot S chamber 103, 203, 303 Negative pressure generating cleaning device 104a, 304a, 36a Intake line 104b, 304b, 36b Exhaust line 14 M419220 23 Negative pressure generating unit 34 Intake adjusting unit 35 Detection unit 36 Negative pressure adjusting unit 37 Diffusion chamber 38 Expansion chamber 39 Vacuum port 303a Proportional integral micro PP Positive pressure zone NP Negative pressure zone D Direction G1 ' G2 Gas A Air 1~6 Zone 0 Center point 15