M417657 五、新型說明： 、 【新型所屬之技術領域】 本創作係關於一種白光發光裝置，尤其關於一種其發光層包含一 具通式（Ba2-x-yMx)Si〇4 : Euy ( OS 2-x-y<2.0、0S χ<2·0、0<y<0.5、 且M為Mg、Ca或Sr或前述多者之任意比例組合）之矽酸鹽螢光 粉的白光發光裝置。 【先前技術】 近年由於節能議題及環保意識抬頭，發光二極體已成為全球最 受矚目之新興產品，並逐漸取代傳統照明設備，蓋發光二極體具 有小尺寸（可因應設備微型化之趨勢）、耗電量低（用電量為一般 燈泡之八分之一至十分之一，日光燈之二分之一）、壽命長（可達 10萬小時以上）、發熱量低（熱輻射低）、反應速度佳（可高頻操 作）等優點，可解決傳統照明裝置所無法解決之問題。發光二極 體也因兼具省電與環保概念而被譽為「綠色照明光源」。 就目前現有之二極體而言，因半導體材料大多存在特定之發射 波長，故無法僅由單個發光二極體來實現具全光譜波段之白光發 光裝置。為此，業界已發展出結合數個不同波段之二極體晶片於 一基板上之白光發光裝置，可藉由控制電流來調配各晶片之發光 強度，進而混色成所欲之白光。然而，此種裝置存在體積過大、 混色不均等缺點，難以應用於需高照度之照明裝置上。更甚者， 此種裝置在運作時會產生大量的熱能而增加晶片故障之機率，且 若其中一晶片失效，只能汰換整個基板，因而大幅降低裝置之使 3 M417657 用效益。 鑒於此，本創作提供一種白光發光裝置，其不存在上述缺點且 具有優異之發光效率及較長之使用壽命。 【新型内容】 本創作提供一種白光發光裝置，包含一基板、一激發光源以及 一包覆該激發光源之發光層，其中該發光層包含具通式 (Ba2-x-yMx)Si〇4 : Euy ( 0 S 2-x-y<2.0、0 S x<2.0、0<y<0.5、且 Μ 為Mg、Ca或Sr或前述多者之任意比例組合）之矽酸鹽螢光粉， 且該矽酸鹽螢光粉係經由燒結（sintering) —前驅物而製得，該前 驅物係包含一該石夕酸鹽瑩光粉之晶種。 為讓本創作之上述目的、技術特徵及優點能更明顯易懂，下文 係以部分具體實施態樣進行詳細說明。 【實施方式】 以下將參照所附圖式以更充分地描述本創作之部分實施態樣。 惟本創作尚可以多種不同形式來實踐，且不應將其解釋為限於說 明書所例示之實施態樣。此外，在所附圖式中，為明確起見可能 誇示各物件及區域的尺寸，而未按照實際比例繪示。同時，除非 文中有另外說明，於本說明書中（尤其是在後述專利申請範圍中） 所使用之「一」、「該」及類似用語應理解為包含單數及複數形式。 第1圖為本創作之發光裝置之一實施態樣的示意圖。如第1圖 所示，發光裝置1係包含一基板4、一位於基板4上之激發光源3 以及一包覆激發光源3之發光層2,其中發光層2係包含具通式 (Ba2-x-yMx)Si〇4 : Eiiy ( 0 S 2-x-y<2.0、0 S x<2.0、0<y<0.5、且 Μ M417657 -為Mg、Ca或Sr或前述多者之任意比例組合，例如當Μ為Mg及 ‘ Ca之組合時，Μ之組成為MgnCai.n(0<n<l))之矽酸鹽螢光粉5。 本創作係利用激發光源3所發射之光來激發發光層2中之矽酸鹽 螢光粉5以產生一螢光，剩餘之發射光並與該螢光混色成所欲之 白光。此一設計僅須使用單個二極體晶片，能減少裝置體積，且 因矽酸鹽螢光粉5係均勻分布在發光層2之中，故混色效果均勻。 再者，發光層2可保護激發光源3，避免其與空氣直接接觸，降低 發光裝置1因接觸空氣中之水氣而故障的機率。此外，矽酸鹽螢 • 光粉5具有優異之熱穩定性，可增長裝置之使用壽命。 本創作採用具有通式（Ba2-x_yMx)Si04 : Euy ( 0 $ 2-x-y<2.0、0 $ x<2.0、0<y<0.5、且Μ為Mg、Ca或Sr或前述多者之任意比例組 合）之矽酸鹽螢光粉，其具有良好之熱穩定性且可藉由波長約330 奈米至約360奈米（紫外光範圍）及/或約400奈米至約500奈米 (藍光範圍）之光照射而發射出波長約540奈米至約590奈米之 黃綠光。根據色彩加成原理，藍光可與黃綠光混色成白光。因此， φ 於本創作之一具體實施態樣中，係採用發藍光之激發光源3與僅 含(Ba2_x_yMx)Si04 : Euy矽酸鹽螢光粉5單一種螢光粉之發光層2 的組合。然，本創作亦可使用發紫外光之激發光源，當使用紫外 光激發光源時，此時發光層2必須根據色彩混色原理搭配使用一 或多種其他補色螢光粉（如可受紫外光激發產生藍光之螢光粉） 以與矽酸鹽螢光粉所發射之黃綠光混色，提供白光。本領域具有 通常知識者於觀得本說明書揭露内容後，可依其通常知識根據比 爾定律（Beer’s law)簡單調配該等補色螢光粉之比例，提供所欲 之白光。 5 M417657 本創作採用之矽酸鹽螢光粉較佳係-以固態反應法製得，所述固 態反應法包含提供一前驅物以及對該前驅物進行燒結，其中該前 驅物係包含一與所欲矽酸鹽螢光粉具相同通式之晶種，從而利用 晶種作為成長核以外延成長尺寸較大且較具高結晶度之矽酸鹽螢 光粉，以及減少矽酸鹽螢光粉的表面缺陷。 晶種可以任何合宜之方法製得，只要其通式為（Ba2_x_yMx)Si04 : Euy即可。舉例言之，可以固態反應法所製得之螢光粉為晶種。於 本創作一具體實施態樣中，係採用相同之反應溫度、時間及氛圍 之固態反應法來製備所使用之晶種與最終矽酸鹽螢光粉產物，僅 後者（即，最終矽酸鹽螢光粉產物）之反應前驅物另包含前者（即， 晶種）。此即，先以選定之前驅物及熱處理程序來製備具所欲元素 配比之矽酸鹽螢光粉，作為晶種，嗣後再以本創作，將所得之晶 種混入相同前驅物組合中，並以相同之熱處理條件來製備所欲之 矽酸鹽螢光粉。 於固態反應法中，考量晶體成長效益，以前驅物之重量計，較 佳係於螢光粉前驅物中含有約1重量％至約50重量％、尤佳約5 重量％至約20重量％之晶種。蓋若晶種之含量小於1重量％，無 法具體呈現添加晶種之功效；而若晶種之含量大於50重量％，此 時將因前驅物其他成分之含量過低，而使晶體成長之功效不彰。 晶種的尺寸並無特殊限制，然而為提供微米級大小之矽酸鹽螢光 粉以提高其於發光層中之分散性並提供較佳之發光效益，較佳係 使用小於50微米之晶種。於本創作一實施態樣中，係使用粒徑約 10微米至約20微米之晶種。 螢光粉前驅物可包含Ba ' M (Mg、Ca或Sr或前述多者之任意 M417657 比例組合）' Si及Eu之各自鹽類（包含其鹽類之水合物）的組合。 ‘ 以Μ為Sr為例，該前驅物可包含：Si之氧化物、硝酸鹽或碳酸 鹽或前述之混合物；Eu之氧化物、硝酸鹽或碳酸鹽或前述之混合 物；Ba之氧化物、硝酸鹽或碳酸鹽或前述之混合物；以及Sr之氧 化物、硝酸鹽或碳酸鹽或前述之混合物。前驅物中之Ba鹽、Μ之 鹽、Si鹽及Eu鹽的比例，視所欲形成之矽酸鹽螢光粉 (Ba2-x-yMx)Si〇4 : Euy (M之種類及X、y及2-x-y之值係如前文之 定義）中 Ba、Μ、Si 及 Eu 的化學劑量比（stoichiometric proportion ) • 而定。例如，當採用BaC03、SrC03、Si02及Eu203所混成之前驅 物來製備具通式（Bao.sSn.ySiO^Eum之矽酸鹽螢光粉時，此時 Ba : Sr : Si : Eu 之莫耳比為 0.5 : 1.38 : 1 : 0_12，因此 BaC03 : SrC03 : Si02 : Eu203 之莫耳比須為 0.5 : 1·38 : 1 : 0.06。基於本說 明書之教示，本技術領域中具通常知識者可依其通常知識使用不 同原料及配比，來製備具所欲通式之矽酸鹽螢光粉。 在配製好矽酸鹽螢光粉之前驅物後，即可對其進行一燒結步 φ 驟，以達到成長所欲矽酸鹽螢光粉晶粒之目的。其中，為有效控 制所製得螢光粉之品質穩定性，較佳係於燒結步驟前，先對該前 驅物進行一假燒（calcinating )步驟，使其他非所欲之物質氧化脫 逸，隨後再進行該燒結步驟，以更確保晶體可在無雜質干擾之情 況下穩定成長，形成所欲之矽酸鹽螢光粉。此外，如本說明書具 體實施態樣所示，可視需要於前述燒結處理後，於還原氛圍下進 行再一次燒結，以將晶體中之Eu3+還原為Eu2+，增進所製得之矽 酸鹽螢光粉之發光效果。 7 财17657 製備本創作中所用之矽酸鹽螢光粉時所涉之燒結及煆繞之操作 條件（如熱處理溫度、升/降溫速率）係如一般固態反應法所採用 者’取決於所用前驅物之成分，且其溫度應不低於前驅物各成分 之熱分解溫度。舉例言之，當使用BaC03、SrC03、Si〇2及Eu203 此成所欲之前驅物來形成矽酸鹽螢光粉時，可先於空氣氛圍下， 以約9〇〇〇c至約11〇〇〇c之溫度進行一煆燒處理；再於空氣氛圍 下，以約11〇〇。〇至約HOOt之溫度進行一燒結處理；最後再視 而要於隋性氣體（如H2/N2)氛圍下，以約11 〇〇°c至約1500°C之 里度進订再一次之燒結。本領域具有通常知識者於觀得本說明書 ^揭路内容後，當可依其通常知識，視所採用前驅物組成而選用 0且之操作條件來製得所欲之矽酸鹽螢光粉。 y尤白光發光裝置之基板而言，本創作可使用任何適用於電子裝 土板’如藍寶石基板’較佳係經過散熱處理之藍寶石基板， 但不以此為限。 除石夕酸鹽登光粉外’本創作之白光發光I置之發光層主要係 7性材料所構成，例如於本創作之部分具體實施態樣中所用 =氧樹脂’或不會隨時間黃化之光學”。此外，為提高發光 色息及’寅色性’發光層可包含其他波長之榮光粉 ，例如紅 =光粉（如硫化鋅營光粉）或藍光螢光粉（如祕心咖：^ 其用量端視❹者所欲之發光效果而定。 诉，^作^白光發光裝置之激發光源可為任何合宜形式之發 而要h放射具所力波長之激發光以達所欲發光效果即可。 言，係採用發光二極體作為發光光源，如氮化鎵二極體， M417657 可發出波長-約420奈米至約460奈米之藍光或波長約330奈米至 約360奈米之紫外光；或者，亦可採用能提供單一波長之激發光 源的雷射二極體。 以下將以（BawSrudSiCU : EuG.l2矽酸鹽螢光粉及氮化鎵發光二 極體之組合的實施例進一步說明本創作。 實施例 [晶種之製備] 依 0.5 : 1.38 : 1 : 0·06 之莫耳比例秤取 BaC03、SrC03、Si02 及 Eu2〇3，並研磨所得混合物以作為前驅物。將前驅物置於高溫爐 中，於空氣氛圍下以5°C/分鐘之速率升溫至約1000°C，於約1000°C 進行煆燒，歷時約6小時，隨後以5°C/分鐘之速率冷卻至室溫， 將所得之產物以研砵研磨至均勻粉狀。接著，將該粉體置於高溫 爐中，於空氣氛圍下以5°C/分鐘之速率升溫至約1250°C，於約 1250°C進行燒結，歷時約6小時，隨後以5°C/分鐘之速率冷卻至 室溫，將所得產物以研钵研磨至均勻粉狀。最後，將該粉體置於 高溫爐中，於H2/N2 (5%/95%)氛圍下以5°C/分鐘之速率升溫至 約1250°C，於約1250°C進行燒結，歷時約6小時，隨後以5°C/ 分鐘之速率冷卻至室溫，並將所得之產物以研缽研磨至均勻粉 狀，獲得粒徑為約10微米至約20微米之晶種（Bao.sSr^OSiC^ : Eu〇.12 ° [矽酸鹽螢光粉A之製備] 重覆晶種之製備程序以製備所欲之矽酸鹽螢光粉A (Ba〇.5SrL38)Si04 : Eu〇.i2。惟在前驅物中添加10重量％ (以前驅物 9 M417657 之重量計）之晶種。 使用Hitachi S-2400對矽釀鹽螢光粉a進行電子顯微鏡掃瞄， 影像如附件1所示。由附件i可知，石夕酸鹽螢光粉A之粒徑為約 15微米至約30微米。 使用FluoroMax-3光譜儀對矽酸鹽螢光粉A進行放射光譜之測 里（於波長為460奈米之光的激發下），結果如第2圖所示，可發 現矽酸鹽螢光粉A之放射光為波長約55〇奈米之黃綠光。 最後’使用FluoroMax-3光譜儀量測矽酸鹽螢光粉a在空氣中 於25°C至300°C之循環溫度下之發光強度，其結果如第3圖所示。 從第3圖中可知’矽酸鹽螢光粉a在15〇〇c下之發光強度仍高達 常溫（25°C)時之80%，且在歷經此熱循環測試後，其放發光強 度與循環測試前無太大變化’此證實了矽酸鹽螢光粉A具有良好 的熱穩定性。 [白光發光裝置之製備] 混合螢光材料A與環氧樹脂後提供一封裝膠體。使用該封裝膠 體封裝一接合有一氮化鎵發光二極體之藍寶石基板並於15〇〇c下 固化形成發光層，製得本創作之白光發光裝置。 綜上’本創作所提供之新穎白光發光裝置不僅可克服傳統白光 裝置之體積魔大及混色效果不佳等缺點，且所用之矽酸鹽螢光粉 具有優異之熱穩定性可延長白光發光裝置之使用壽命。 雖然參照附圖闞述了本創作之實施例，但本創作並非侷限於該 確切之實施例’而係熟悉此項技術者可對本創作進行修改或變 更’此類修改或變更皆應包括在申請專利範圍所界定之本創作範 M417657 圍内。 - 【圖式簡單說明】 第1圖所示為本創作白光發光裝置之一具體實施態樣之示意圖。 第2圖所示為實施例之矽酸鹽螢光粉A於波長為460奈米之激 發光照射下的放射光譜。 第3圖所示為實施例之矽酸鹽螢光粉A之熱特性趨勢圖。 【主要元件符號說明】 1 :發光裝置 2 :發光層 3:激發光源 4 :基板 5:矽酸鹽螢光粉 11M417657 V. New description: [New technical field] This is a white light-emitting device, especially for a light-emitting layer containing a general formula (Ba2-x-yMx)Si〇4 : Euy ( OS 2- A white light-emitting device of phthalate phosphor powder having x-y < 2.0, 0S χ < 2·0, 0 < y < 0.5, and M is Mg, Ca or Sr or any combination of the foregoing. [Prior Art] In recent years, due to energy-saving issues and awareness of environmental protection, light-emitting diodes have become the world's most eye-catching emerging products, and gradually replace traditional lighting equipment. The cover light-emitting diodes have small size (can be adapted to the miniaturization of equipment) ), low power consumption (power consumption is one-eighth to one-tenth of a normal light bulb, one-half of a fluorescent lamp), long life (up to 100,000 hours or more), low heat generation (low heat radiation) ), good reaction speed (high-frequency operation) and other advantages, can solve the problems that traditional lighting devices can not solve. The light-emitting diode is also known as the "green lighting source" because it has both power saving and environmental protection concepts. As far as the existing diodes are concerned, since semiconductor materials have a specific emission wavelength, it is impossible to realize a white light emitting device having a full spectrum band by only a single light-emitting diode. For this reason, the industry has developed a white light-emitting device that combines a plurality of diode chips of different wavelength bands on a substrate, and the light intensity of each wafer can be adjusted by controlling the current, thereby mixing the desired white light. However, such devices have disadvantages such as excessive volume and uneven color mixing, and are difficult to apply to lighting devices requiring high illumination. What's more, such a device generates a large amount of thermal energy during operation and increases the probability of chip failure. If one of the wafers fails, only the entire substrate can be replaced, thereby greatly reducing the efficiency of the device. In view of this, the present invention provides a white light emitting device which does not have the above disadvantages and which has excellent luminous efficiency and a long service life. [New content] The present invention provides a white light emitting device comprising a substrate, an excitation light source and a light emitting layer covering the excitation light source, wherein the light emitting layer comprises a general formula (Ba2-x-yMx) Si〇4 : Euy ( 0 S 2-x-y < 2.0, 0 S x < 2.0, 0 < y < 0.5, and Μ is Mg, Ca or Sr or a combination of any of the foregoing in any ratio) of citrate phosphor powder, and The phthalate phosphor powder is prepared by sintering a precursor comprising a seed crystal of the phosphoric acid powder. In order to make the above objects, technical features and advantages of the present invention more obvious and easy to understand, the following is a detailed description of some specific embodiments. [Embodiment] Some embodiments of the present invention will be described more fully hereinafter with reference to the accompanying drawings. However, this work can be practiced in many different forms and should not be construed as limited to the examples exemplified in the book. Further, in the drawings, the dimensions of the various items and regions may be exaggerated for clarity, and are not shown in actual scale. In the meantime, the terms "a", "an" and "the" Fig. 1 is a schematic view showing an embodiment of a light-emitting device of the present invention. As shown in FIG. 1, the light-emitting device 1 comprises a substrate 4, an excitation light source 3 on the substrate 4, and a light-emitting layer 2 covering the excitation light source 3, wherein the light-emitting layer 2 comprises a general formula (Ba2-x). -yMx)Si〇4 : Eiiy ( 0 S 2-x-y < 2.0, 0 S x < 2.0, 0 < y < 0.5, and Μ M417657 - is Mg, Ca or Sr or any combination of the foregoing, For example, when niobium is a combination of Mg and 'Ca, the composition of niobium is MgOCai.n (0<n<l)) citrate phosphor 5 . The present invention utilizes the light emitted by the excitation light source 3 to excite the citrate phosphor 5 in the luminescent layer 2 to produce a fluorescent light, and the remaining emitted light is mixed with the fluorescent light to form a desired white light. This design only requires the use of a single diode wafer, which can reduce the volume of the device, and because the bismuth silicate powder 5 is evenly distributed in the luminescent layer 2, the color mixing effect is uniform. Furthermore, the luminescent layer 2 protects the excitation light source 3 from direct contact with the air, reducing the probability that the illuminating device 1 will fail due to contact with moisture in the air. In addition, Citrate Fluoride • Gloss 5 has excellent thermal stability and can increase the life of the unit. This creation uses the general formula (Ba2-x_yMx) Si04 : Euy ( 0 $ 2-x-y < 2.0, 0 $ x < 2.0, 0 < y < 0.5, and Μ is Mg, Ca or Sr or the foregoing a bismuth silicate powder of any ratio) having good thermal stability and having a wavelength of from about 330 nm to about 360 nm (UV range) and/or from about 400 nm to about 500 nm The light of the (blue light range) emits yellow-green light having a wavelength of about 540 nm to about 590 nm. According to the color addition principle, blue light can be mixed with yellow-green light to form white light. Therefore, in one embodiment of the present invention, φ is a combination of a blue light-emitting excitation light source 3 and a light-emitting layer 2 containing only (Ba2_x_yMx)Si04: Euy phthalate phosphor powder 5 and a single phosphor powder. However, this creation can also use an ultraviolet excitation light source. When using ultraviolet light to excite the light source, the light-emitting layer 2 must be combined with one or more other complementary color phosphors according to the color mixing principle (for example, it can be excited by ultraviolet light). Blue Light Fluorescent Powder) Provides white light by mixing with the yellow-green light emitted by the phthalate phosphor. Those skilled in the art will be able to provide the desired white light by simply blending the ratios of the complementary color phosphors according to Beer's law, after viewing the disclosure of the present specification. 5 M417657 The phthalate phosphor used in the present invention is preferably prepared by a solid state reaction method comprising providing a precursor and sintering the precursor, wherein the precursor comprises a desired The phthalate phosphor has a seed crystal of the same general formula, thereby utilizing the seed crystal as a growth core to epitaxially grow a larger size and higher crystallinity of phthalate phosphor powder, and to reduce the citrate phosphor powder. Surface defects. The seed crystal can be obtained by any suitable method as long as it has the formula (Ba2_x_yMx)Si04: Euy. For example, the phosphor powder obtained by the solid state reaction method is a seed crystal. In a specific embodiment of the present invention, the same reaction temperature, time and atmosphere solid state reaction method is used to prepare the seed crystal used and the final citrate phosphor powder product, only the latter (ie, the final citrate) The reaction precursor of the phosphor powder product further comprises the former (i.e., seed crystal). That is, the silicate phosphor powder having the desired element ratio is prepared by selecting the precursor and the heat treatment procedure as the seed crystal, and then the obtained seed crystal is mixed into the same precursor composition by the present invention. The desired silicate phosphor powder is prepared under the same heat treatment conditions. In the solid state reaction method, the crystal growth benefit is considered, and the weight of the precursor is preferably from about 1% by weight to about 50% by weight, particularly preferably from about 5% by weight to about 20% by weight, based on the weight of the precursor of the phosphor powder. Seed crystals. If the content of the seed crystal is less than 1% by weight, the effect of adding the seed crystal cannot be specifically exhibited; and if the content of the seed crystal is more than 50% by weight, the effect of crystal growth due to the content of other components of the precursor is too low. Not at all. The size of the seed crystal is not particularly limited, however, in order to provide a micron-sized bismuth silicate phosphor to improve its dispersibility in the luminescent layer and to provide a better luminescent efficiency, it is preferred to use a seed crystal of less than 50 μm. In one embodiment of the present invention, seed crystals having a particle size of from about 10 microns to about 20 microns are used. The phosphor powder precursor may comprise a combination of Ba ' M (Mg, Ca or Sr or any of the aforementioned M417657 ratio combinations) 'the respective salts of Si and Eu (including hydrates of the salts thereof). Taking Μ as Sr as an example, the precursor may comprise: an oxide of Si, a nitrate or a carbonate or a mixture of the foregoing; an oxide, a nitrate or a carbonate of Eu or a mixture of the foregoing; an oxide of Ba, nitric acid a salt or carbonate or a mixture of the foregoing; and an oxide, nitrate or carbonate of Sr or a mixture of the foregoing. The ratio of Ba salt, barium salt, Si salt and Eu salt in the precursor, bismuth fluorite powder (Ba2-x-yMx)Si〇4 : Euy (M type and X, y) And the value of 2-xy is as defined above). The stoichiometric proportion of Ba, Μ, Si and Eu depends on. For example, when BaC03, SrC03, SiO2, and Eu203 are mixed to prepare a bismuth silicate powder of the formula (Bao.sSn.ySiO^Eum), Ba: Sr: Si: Eu The ratio is 0.5 : 1.38 : 1 : 0_12 , so the molar ratio of BaC03 : SrC03 : Si02 : Eu203 must be 0.5 : 1·38 : 1 : 0.06. Based on the teachings of this specification, those of ordinary skill in the art can rely on It is generally known to use different raw materials and ratios to prepare a phthalate phosphor having a desired formula. After preparing the phthalate phosphor, the sintering step can be performed. In order to achieve the purpose of growing the desired silicate phosphorate crystal grains, in order to effectively control the quality stability of the prepared phosphor powder, it is preferred to perform a pseudo-burning of the precursor before the sintering step ( The calcinating step is to oxidize and release other undesired substances, and then carry out the sintering step to further ensure that the crystal can grow stably without impurity interference to form a desired bismuth silicate phosphor. As shown in the specific embodiment of the specification, it may be required to burn as described above. After the treatment, the sintering is further performed in a reducing atmosphere to reduce the Eu3+ in the crystal to Eu2+, thereby enhancing the luminescent effect of the prepared citrate fluorescent powder. 7 Cai 17657 Preparation of the citrate fluorite used in the present creation The sintering and winding operating conditions (such as heat treatment temperature, rise/fall rate) involved in the light powder are as used in the general solid state reaction method 'depending on the composition of the precursor used, and the temperature should not be lower than the precursor. The thermal decomposition temperature of each component. For example, when BaC03, SrC03, Si〇2, and Eu203 are used as the desired precursor to form the phthalate phosphor, it can be about 9 先 before the air atmosphere.煆c to about 11〇〇〇c for a sinter treatment; then under air atmosphere, about 11 〇〇. 〇 to about HOOt temperature for a sintering treatment; finally look at the inert gas (In the case of H2/N2), the sintering is repeated once again at a temperature of about 11 〇〇 ° C to about 1500 ° C. Those who have the usual knowledge in the field can see the contents of this manual after the disclosure. According to its usual knowledge, 0 is selected depending on the composition of the precursor used. Conditioning to obtain the desired bismuth fluorite powder. For the substrate of the y white light emitting device, the present invention can use any sapphire substrate suitable for electronic loading board such as sapphire substrate. However, it is not limited to this. In addition to the lithological powder of the lithograph, the luminescent layer of the white light illuminating I is mainly composed of seven materials, for example, used in some specific embodiments of the present invention. Resin 'or optical that does not yellow with time.' In addition, the luminescent layer for improving luminescent color and 'bleeding' may contain other wavelengths of glory, such as red = light powder (such as zinc sulfide camping powder) or Blu-ray phosphor powder (such as secret coffee: ^ The amount of use depends on the illuminating effect of the person. The sound source of the white light-emitting device can be any suitable form of light, and the excitation light of the wavelength of the force should be irradiated to achieve the desired light-emitting effect. In other words, a light-emitting diode is used as a light-emitting source, such as a gallium nitride diode, and the M417657 emits a blue light having a wavelength of about 420 nm to about 460 nm or an ultraviolet light having a wavelength of about 330 nm to about 360 nm. Alternatively, a laser diode capable of providing an excitation source of a single wavelength may be used. The present invention will be further described below with an example of a combination of BawSrudSiCU: EuG.l2 phthalate phosphor and gallium nitride light-emitting diodes. EXAMPLES [Preparation of seed crystals] According to 0.5: 1.38: 1 : 0· The molar ratio of 06 is taken to BaC03, SrC03, SiO2 and Eu2〇3, and the resulting mixture is ground to serve as a precursor. The precursor is placed in a high temperature furnace and heated to about 1000 at a rate of 5 ° C / min in an air atmosphere. The mixture was calcined at about 1000 ° C for about 6 hours, then cooled to room temperature at a rate of 5 ° C / minute, and the obtained product was ground to a uniform powder in a mortar. Then, the powder was powdered. It is placed in a high-temperature furnace, heated to about 1250 ° C at a rate of 5 ° C / min in an air atmosphere, and sintered at about 1250 ° C for about 6 hours, and then cooled to a chamber at a rate of 5 ° C / minute. At the temperature, the obtained product was ground to a uniform powder in a mortar. Finally, the powder was placed in a high temperature furnace and heated at a rate of 5 ° C / minute in an atmosphere of H 2 /N 2 (5%/95%). Sintering at about 1250 ° C at about 1250 ° C for about 6 hours, then cooling to room temperature at a rate of 5 ° C / minute, and The obtained product is ground to a uniform powder in a mortar to obtain a seed crystal having a particle diameter of about 10 μm to about 20 μm (Bao.sSr^OSiC^: Eu〇.12 ° [Preparation of bismuth fluorite powder A] The procedure for preparing the seed crystal is repeated to prepare the desired phthalate phosphor A (Ba〇.5SrL38)Si04: Eu〇.i2, except that 10% by weight of the precursor is added (the weight of the precursor 9 M417657) Seed crystals. Electron microscopy of the brewed salt fluorescein a using Hitachi S-2400, as shown in Annex 1. As shown in Annex I, the particle size of the phosphoric acid powder A is about 15 Micron to about 30 μm. Using a FluoroMax-3 spectrometer to measure the radioactivity of citrate fluorescein A (excited by light with a wavelength of 460 nm), the results are shown in Fig. 2, and 矽 can be found. The phosphorescent powder A emits yellow-green light with a wavelength of about 55 nanometers. Finally, 'the FluorMax-3 spectrometer is used to measure the phthalate phosphor a in air at a cycle temperature of 25 ° C to 300 ° C. The luminescence intensity is shown in Fig. 3. As can be seen from Fig. 3, the luminescence intensity of citrate fluorescein a at 15 〇〇c is still as high as normal temperature (25). C) 80% of the time, and after the thermal cycle test, the luminous intensity of the discharge did not change much before the cycle test'. This confirmed that the phthalate phosphor A has good thermal stability. [White light emitting device Preparation of the phosphorescent material A and the epoxy resin to provide a package colloid. The encapsulant is used to encapsulate a sapphire substrate bonded with a gallium nitride light-emitting diode and cured at 15 〇〇c to form a light-emitting layer. The white light emitting device of the present invention. In summary, the novel white light-emitting device provided by the present invention not only overcomes the shortcomings of the conventional white light device, but also has the advantages of poor volume and poor color mixing effect, and the used silicate phosphor powder has excellent thermal stability to extend the white light-emitting device. The service life. Although the embodiment of the present invention is described with reference to the accompanying drawings, the present invention is not limited to the exact embodiment, and those skilled in the art can modify or modify the creation. Such modifications or changes should be included in the application. The scope of the patent is defined by the scope of the creation of M417657. - [Simple description of the drawing] Fig. 1 is a schematic view showing a specific embodiment of the white light emitting device. Fig. 2 is a graph showing the emission spectrum of the phthalate phosphor powder A of the example at a wavelength of 460 nm. Fig. 3 is a graph showing the thermal characteristics of the silicate phosphor powder A of the examples. [Description of main component symbols] 1 : Light-emitting device 2 : Light-emitting layer 3: Excitation light source 4 : Substrate 5: Tellurite fluorescent powder 11