M363732M363732
五、新型說明： 【新型所屬之技術領域】 本新型關於-種電聽護模組，特別是指以金屬凸塊取代鲜線 將元件以覆晶方式電性銲接於基板上。 【先前技術】 μ由於鐘電池的體積密度、能量密度高，並有高達4·2ν 喊電池⑨壓’因此在手機、PDA和數位械等可檇式電 品中獲得了廣泛的應用。為了確保使用的安全性，鐘電池在應 用中必須有相應的電池管理電路來防止電池的過充電'過放= 和過電流。 i 圖1顯示-鐘電池封裝内保護電路之示意圖，包括電池纪 1〇及電池保護模組Ή兩個部份，而在電池保麵組糾中又 =電池保護電路做11Q及金氧半場效電㈣電路模組 ^兩部份，金氧半場效電晶體電路模組川又包括放電金 =場=晶體川a及充電金氧半場效電晶體川卜其中 二;會偵測電池組1Q之電壓及充放電電 體金乳半场效電晶體彳他及充電金氧半場效電晶 尸靜日’放電金氧半場效電晶體1113及充電金氧半 T^J11Atb分別控制放電迴路與充電迴路的導通及開 右 吊狀態下’電池保護電路模組110之” D〇，，盥” C0” 高電壓’放電金氧半場效電晶體Mb及充電金氧 1 b處於導通狀態，飾也㈣可以自由進 二27 ° ^在被充電過財’#電池電壓被充電至超 匕疋，列如：4_3V時，會導致電池損壞或出現安全問題。 98. 6. 1^·ίί| 年Η曰扁充 M363732 所以在充電過程中’當電池保護電路模組彻檢“至^;組’ 1〇之電屢高於-定值時，如:4·2δν (依不同電地保護電路模电 不同的丨C有不同的值），其“C〇”腳將由高電壓 閉，從而切斷充電回路，使充電器無法再對電池進行充！：= 護作用。電池組1〇在對外部負載放電過‘，i ^ t隨者放電過程逐漸降低’ #電池電壓 ς 當電池保護電路模組彻檢測到電 低於某預讀時，如：2·3ν (該值由電池保護電路模电 不同的丨c有不同的值），其“D〇”腳 為電 用。使电池無法再對負载進行放電，起到過放電保護作 池^^裝内之電池保護模組。圖二八顯示保電 已封裝之電池保::蒦:路電池保護模組之截面圖。 組川以类而吐人电L 10與金氧半場效電晶體電路模V. New type of description: [New technical field] The new type of electric listening module, in particular, replaces the fresh wire with a metal bump to electrically solder the component to the substrate in a flip chip manner. [Prior Art] μ Due to the bulk density of the battery, high energy density, and up to 4·2 ν shouting the battery 9 voltage, it has been widely used in mobile phones, PDAs, and digital devices. In order to ensure the safety of use, the clock battery must have a corresponding battery management circuit in the application to prevent overcharging and overcurrent of the battery. i Figure 1 shows the schematic diagram of the protection circuit in the battery pack, including the battery pack 1 and the battery protection module, and in the battery protection group correction = battery protection circuit to do 11Q and gold oxygen half-field effect Electric (four) circuit module ^ two parts, gold oxygen half-field effect transistor circuit module Sichuan also includes discharge gold = field = crystal Chuan and charging gold oxygen half-field effect transistor Chuanbu; two will detect the voltage of the battery pack 1Q And charge and discharge electric body gold milk half-field effect transistor 彳 he and charge gold oxygen half-field effect electric crystal corpse static day 'discharge gold oxygen half field effect transistor 1113 and charge gold oxygen half T ^ J11Atb control discharge circuit and charging circuit respectively Turn on and open the right side of the 'battery protection circuit module 110' D〇,, 盥" C0" high voltage 'discharge gold oxygen half field effect transistor Mb and charge gold oxygen 1 b in conduction state, decoration also (four) can be free Into the second 27 ° ^ in the charge of the battery '# battery voltage is charged to super 匕疋, such as: 4_3V, it will cause battery damage or safety problems. 98. 6. 1^· ίί| M363732 So during the charging process, when the battery protection circuit module is complete “To ^; group '1〇's electricity is higher than the fixed value, such as: 4·2δν (depending on the different electric circuit protection circuit, the different 丨C has different values), its “C〇” foot will be high The voltage is closed, thus cutting off the charging circuit, so that the charger can no longer charge the battery! := Protection. The battery pack 1〇 is discharged to the external load, and the i ^ t discharge process gradually decreases. # Battery voltage ς When the battery protection circuit module detects that the power is lower than a certain read-ahead, such as: 2·3ν ( The value is different from that of the battery protection circuit. The "D〇" pin is electrically used. The battery can no longer discharge the load, and the battery protection module is installed in the over-discharge protection pool. Figure 28 shows the power-saving packaged battery protection::蒦: A cross-sectional view of the battery protection module. Group Chuan spoke human L 10 and gold oxygen half-field effect transistor circuit model
^ ° (SU^ m〇Unt techno,°^W 製程將尚’可採用chip on board (COB)焊線 體電= 電路模組110與金氧半場效電晶 A及圖ί 銲線銲接於電路板上，如圖三所示。圖三 體電路池^電魏组110與金氧半場效電^ 圖及截面圖。白以 銲線技術銲接於電路板上之俯視 ， 户J 曰·/ j M363732 使用COB銲線技術時，對於I〜 __ 言，所需之銲線線徑約0.8至】2 m二^又電路模組而 場效電晶體電路模組之銲_心二半 通電阻__)過大造成導通時因執損而Γ 板上做不’細的銲線會-在相同基 氧半場效_電额師簡化，金 _卜會造成製程成本提高保;===徑2 模組和電池峨路綱使職體電路 則金氧半場效電晶體電補 ^、干線’ 超來銲線數量之兩倍，例如至少增加 罐2 m丨丨之物能^ ^ = 【新型内容】 餘結合咖銲線技術，來 需求不同‘:組與電池保護電路模組因銲線 模叙，呈η、ί屬 弟二組金屬塾；—電池保護電路 該第-:且全屬接點’以複數根鲜線將該些金屬接點與 年組金屬墊分別電性連接， 護該電池不被過充電或過放電，其中， m 該電池保護電路模組之接 其中，該第一組金屬墊配置於 點四周；以及，—錢半場效電晶體 5 M363732 效電晶體触之_配^—組麵射晴_金氧半場 基板提:全部以金屬凸塊製程取代銲線製程來鲜接 ==該該第—組金屬墊上，此時該第-組二屬=電 保㈤路模組之接點相對配置於該基板上。 ^ 在此電池保護模組中，電池保護電路 模，_金屬凸塊製程以覆晶方^接 之面積再外接銲_胁絲板，可簡倾錢使模袓 組，可很ί 轉雕後可為—鮮化之電池保護模 』很合易的和其他保護模組整合。 圖得點歸科减由町賴作詳述及附 【實施方式】 、本新型H施觸參照_ A及圖四B，分職示一 $池2護餘之俯細域關，電池保護模組4是用以如圖 —之習知技術-般與—電池組(未圖示)相連接以保護: 4 ^ : ^ 40，^ 40 ^ , 匕括碰個金屬接點〜4Q3，—第—組金屬墊4(Ma及 二組金屬#4〇北；一電池保護電路模组4〇5，用以檢測該带 池之電壓及級電電流，防止該電池減過充電或過放電，帝 池保護電路模組405具有複數個金屬接點(未圖示)可做電】 M363732 年月日補无 四 連接，第一組金屬墊404a，位於該電池保護電路模k 405^ ° (SU^ m〇Unt techno, °^W Process will still be able to use chip on board (COB) wire bond body = circuit module 110 and gold oxide half field effect transistor A and figure ί solder wire soldered to the circuit On the board, as shown in Figure 3. Figure three-body circuit pool ^ electric Wei group 110 and gold oxygen half-field effect ^ figure and cross-section. White is welded to the circuit board by wire bonding technology, household J 曰 · / j M363732 When using COB wire bonding technology, for I~ __, the required wire diameter is about 0.8 to 2 m 2 and the circuit module and the field effect transistor circuit module are welded _ heart two half-turn resistance _ _) too large to cause conduction due to damage Γ 做 做 做 板上 板上 板上 板上 板上 - - - - - - - - - - - - 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在Group and battery 峨 纲 使 使 使 使 金 金 金 金 金 金 金 金 金 金 金 金 金 金 金 金 金 金 金 金 金 金 金 金 金 金 金 金 金 金 金 金 金 金 金 金 金 金 金 金 金 金I combine the technology of coffee wire bonding, the demand is different': the group and the battery protection circuit module are represented by the wire bonding, and the two groups are metal 塾, ί, ί; All the contacts are electrically connected to the metal pads of the annual group by a plurality of fresh wires, and the battery is not overcharged or overdischarged, wherein the battery protection circuit module is connected thereto. The first group of metal pads are arranged around the point; and, the money half field effect transistor 5 M363732 effect transistor contact _ with ^ - group surface shot clear _ gold oxygen half field substrate: all replace the bonding wire with metal bump process The process is spliced to == the first group of metal pads, and at this time, the contacts of the first group of two groups = the electrical protection (five) circuit module are relatively disposed on the substrate. ^ In this battery protection module, the battery protection circuit module, _ metal bump process to cover the area of the crystal connection and then external welding _ 丝 wire plate, can be simply dumped to make the mold group, can be very etched It can be integrated with other protection modules for the battery protection module. The map is returned to the department by the town of Lai's detailed description and attached [implementation], the new H touch reference _ A and Figure 4 B, the division shows a $ pool 2 care of the fine-grained area, battery protection module 4 It is used to connect with the battery pack (not shown) to protect: 4 ^ : ^ 40, ^ 40 ^ , including a metal contact ~ 4Q3, - the first group Metal pad 4 (Ma and two sets of metal #4〇北; a battery protection circuit module 4〇5, used to detect the voltage and current current of the battery, to prevent the battery from being overcharged or overdischarged, the protection circuit of the battery The module 405 has a plurality of metal contacts (not shown) for powering up. The M363732 is supplemented with no four connections, and the first set of metal pads 404a are located in the battery protection circuit module k 405.
周並罪近電池保護電路模組4〇5之接點，並以chip on board (COB)鋅線技術將銲線41 (如圖四b所示)由電池保護電路模組 4〇5之金屬接點分別電性連接於第一組金屬墊々ο#上，其中 銲線41之直徑大小約〇·8至12 m丨丨(千分之一吋）；以及了 一 =氧半場效電晶體電路模組406，該金氧半場效電晶體電路 松組406包括一第一金氧半場效電晶體406a及一第二金氧 半眾放電日日體406b，分別控制充電迴路與放電迴路的導通及 開斷以配合電池保護電路模、址4〇5來保護電池組，金氧半場 效電晶體電路模組406具有複數個金屬凸塊接點，以覆晶方 式甩ί•生連接於第二組金屬墊4〇4b上，第二組金屬墊相 對於金氧半場效電晶體電路模組4〇6之接點配置，其中該虺 金屬凸塊42之跨距(bump pitch)為80至500μπι。 此種方式可避開電池保護電路模組4〇6與金氧半場效電 晶體電路模組4G6兩電子元件所需銲線數量及粗細不同>而造Zhou is guilty of the contact of the battery protection circuit module 4〇5, and uses the chip on board (COB) zinc wire technology to weld the wire 41 (shown in Figure 4b) from the metal of the battery protection circuit module 4〇5. The contacts are electrically connected to the first group of metal pads οο, wherein the diameter of the bonding wires 41 is about 至·8 to 12 m丨丨 (one thousandth of a 吋); and one = oxygen half field effect transistor The circuit module 406, the MOS half-effect transistor circuit group 406 includes a first MOS field 406a and a second MOS half-discharge body 406b, respectively controlling the conduction between the charging circuit and the discharging circuit. And breaking to protect the battery pack with the battery protection circuit module and the address 4〇5, the metal oxide half field effect transistor circuit module 406 has a plurality of metal bump contacts, and the flip chip is connected to the second On the metal pads 4〇4b, the second set of metal pads are arranged with respect to the contacts of the gold-oxygen half-effect transistor circuit module 4〇6, wherein the bump bumps of the base metal bumps 42 are 80 to 500 μm. . In this way, the number of wires and the thickness of the two electronic components required for the battery protection circuit module 4〇6 and the gold-oxygen half-field effect transistor circuit module 4G6 can be avoided.
成製程困難度增加之問題，並可降低金氧半場效電晶體電路模 組406之導通電阻減少熱損。 、圖五Α及五Β為另一較佳實施例之俯視圖及截面圖，其中 電池保護電路模組4(35可改以金屬凸塊將電池保護電路模組 405銲接於第一組金屬墊4〇4a上，此時第一組金屬塾如知 相對於電池保護電路模組405之接點配置。如圖五B所示， 電池保濩電路模組405具有複數個金屬凸塊接點，以覆'曰、方 f電性連接於該第一組金屬墊4〇伯上，亦即，在此—實=例 =之電池保護模組，電池保護電路模组405與金氧半場效電 曰曰體電路模組4Q6 金屬凸塊製程哺晶方式銲接於基 反40上’除了解決習知技術之問題外，更可簡化製程，且得 7The problem of increased difficulty in the process can be reduced, and the on-resistance of the gold-oxygen half-field transistor circuit module 406 can be reduced to reduce heat loss. 5 and 5 are top and cross-sectional views of another preferred embodiment, wherein the battery protection circuit module 4 (35 can be modified by metal bumps to solder the battery protection circuit module 405 to the first set of metal pads 4 〇4a, at this time, the first group of metal is known to be connected to the contact of the battery protection circuit module 405. As shown in FIG. 5B, the battery protection circuit module 405 has a plurality of metal bump contacts, The cover is electrically connected to the first set of metal pads 4, that is, the battery protection module, the battery protection circuit module 405 and the gold oxide half field effect device. The body circuit module 4Q6 metal bump process is soldered to the base 40. In addition to solving the problems of the prior art, the process can be simplified, and 7
M363732 ㈤土性，亚使模組之面積尺寸更小，成本更低 偏洲;JrA及圖六B分別為圖五實施例以—封膠封裝後之 t f截面圖’此封裝後電池保護模組60僅露出基板40 作A-屬接點4〇1〜4〇3 ’其他部份皆被封膠所包覆，可 的電池鋪細，賴__與其他更多的 保遵极組整合，如圖七Αm ^ η 雷⑽·η ^圖日所示，分別為標準化後的 /…又H、其絲魏組整合之示意圖域面圖。 優點總結以上酬可知本新型之新型電池保顧組具有以下 (2) ⑶ (1)可減少電路模組生產時封裝的成本 可，低金氧半場效電晶體之導通電阻，減少熱損。 電池保護電路模組及金氧半場效電晶體電 t，用金屬凸塊銲接可簡化製程，並降低因打線 造成良率降低的問題。 ⑷模組化後的倾触可成為鮮組件，整 保護系統中。 以上 ’僅為核型之較佳實闕，其並_以 新型之貫施範圍，任何熟習該項技蓺者 之些微修改，仍應屬本新型之精據本新型之精神所做 【圖式簡單說明】 分別顯示鋰電池封裝内保護模組之俯視M363732 (5) Soil, the size of the sub-module module is smaller, and the cost is lower. The JrA and Figure 6B are respectively the tf cross-section of the package of Figure 5 after sealing the package. 60 only exposes the substrate 40 as the A-genus contact 4〇1~4〇3 'the other parts are covered by the sealant, and the battery can be thinned, and the __ is integrated with other more compliant groups. As shown in Fig. 7Αm ^ η Ray (10)·η ^, the schematic maps of the integrated / / and H, its silk group integration are shown. Advantages Summary The above-mentioned new battery protection group has the following (2) (3) (1) It can reduce the cost of packaging when the circuit module is produced. The on-resistance of the low-oxygen half-field effect transistor can reduce the heat loss. The battery protection circuit module and the gold-oxygen half-field effect transistor t, the metal bump welding can simplify the process and reduce the problem of the yield reduction caused by the wire. (4) The modularized tilt can be used as a fresh component in the entire protection system. The above is only a better example of the nuclear type, and it is based on the scope of the new type. Any slight modification of those skilled in the art should still be based on the spirit of the present invention. Brief Description] Display the top view of the protection module inside the lithium battery package
圖一顯示一鋰電池封裝内保護電路之示意圖； 圖二 A、二 B 圖及截面 圖 圖三A. B分別顯示電池保護電路模組與金氧半 場效電晶體 8 M363732 }8. 6: ί 9修正 ，紐皆以COB銲線技術銲接於基板上之俯視圖^ 圖， 圖四A: B分職林_電祕麵組其巾—實施例之俯 視圖及截面圖； ==㈣嘛峨峨邮—實施例之俯視 ==t:r林峨峨模崎驗之俯 圖七〜七B分纖示已封裝之本新型電池保護模組後與其他 電池保翻組整合之電路示意ϋ及截面圖。 【主要元件符號說明】 電池保護模組4 金屬接點401〜403 卓—組金屬整404b 金屬凸塊42、43 金氧半場效電晶體電 第一金氧半場效電晶體406a 第二金氧半場效電晶體406b 基板40 第一組金屬墊4〇4a 銲線41 電池保護電路模組405 路模組406 9Figure 1 shows a schematic diagram of a protection circuit in a lithium battery package; Figure 2A, Figure 2B and a cross-sectional view of Figure III. A. B shows the battery protection circuit module and the metal oxide half field effect transistor 8 M363732 }8. 6: ί 9 correction, the top view of the welding of the COB wire bonding technology on the substrate ^ Figure, Figure A A: B divided the forest _ electric secret surface group towel - the top view and sectional view of the embodiment; == (four) why post -Overview of the embodiment ==t: r Lin 峨峨 峨峨 验 验 七 七 七 七 七 七 七 七 七 七 七 七 七 七 七 七 七 七 七 七 七 七 七 七 七 七 七 七 七 七 七 七 七 七 七 七 七 七 七[Main component symbol description] Battery protection module 4 Metal contacts 401~403 Zhuo-group metal 404b Metal bumps 42, 43 Gold oxygen half-field effect transistor electric first oxygen half-field effect transistor 406a Second gold oxygen half Effect transistor 406b substrate 40 first group of metal pads 4〇4a bonding wire 41 battery protection circuit module 405 circuit module 406 9