-M352125 八、新型說明： 【新型所屬之技術領域】 本創作係關於一種半導體晶粒脫離結構之設計，特別是 關於一種半導體晶粒之超音波脫離結構。 【先前技術】 半導體產業於現今社會已成為不可或缺之一環，且半導 體產業之發展更代表科技之進步性，所應用之範圍已跨越各 種專業領域。由於半導體產業對於科技之進步與帶動相關電 子產業之重要性，其製造及封裝流程也更需隨之進步。因應 社會之需求，在晶圓製程中，特別係在封裝過程中，業者及 使用者更是注意其是否符合經濟效益。 於晶圓製程中，晶圓由前段製程製作成形後，進入封裝 階段，其流程分為晶圓固定、晶圓切割、黏晶、導線架焊接、 焊線、封膠、電鍍、成型之後檢測並印字。其中晶圓固定至 黏晶過程，係以晶圓黏附於一被框架拉伸固定之膠帶層，再 以南速切割輪將晶圓切割成大小固定之晶粒，隨後以晶粒脫 離結構之頂制裝置以膠帶層下方頂制晶粒，並用一吸取裝置 剝離晶粒後並放置於晶粒接著墊。 參閱第1圖所示，其係顯示習知之晶粒脫離結構之平面 示意圖。如圖所示，習知之晶粒脫離結構100，用以使一晶 粒1脫離於一膠帶層2,該膠帶層2具有一黏附面21及一頂 制面22，其中晶粒1係黏附於膠帶層2之黏附面。晶粒脫離 結構100係包括有一吸取機構3及一頂制裝置4。其中吸取 •M352125 機構3具有一吸嘴31，該吸嘴31與該膠帶層2之黏附面2ι 之晶粒1保持一預定間距。頂制裝置4具有一頂針41，該頂 針41與膠帶層2之頂制面22保持一預定間距並對應於晶粒 1 ° 參閱第2圖所示，其係顯示習知之晶粒脫離結構之動作 示意圖，用以顯示頂制裝置之頂針頂制晶粒。如圖所示，頂 針41係配置於頂制裝置4之一端。頂制裝置4之頂針4丨透 φ 過膠帶層2頂制晶粒1，使晶粒1及膠帶層2間之接觸面積 呈縮減之現象，相對地以此狀態晶粒丨及膠帶層2間之黏著 力也減少。當膠帶層2對晶粒i之黏著力低於吸取機構3最 小吸引力時’吸取機構3之吸嘴31便於膠帶層2上剥離晶 粒1 〇 【新型内容】 本創作所欲解決之技術問題-M352125 VIII. New Description: [New Technology Field] This paper is about the design of a semiconductor die-off structure, especially regarding the ultrasonic detachment structure of a semiconductor die. [Prior Art] The semiconductor industry has become an indispensable part of today's society, and the development of the semiconductor industry is more representative of the advancement of technology. The scope of application has spanned various fields of expertise. As the semiconductor industry is more important to the advancement of technology and the importance of the relevant electronics industry, its manufacturing and packaging processes will need to evolve. In response to the needs of the society, in the wafer manufacturing process, especially in the packaging process, operators and users pay more attention to whether it is economical. In the wafer process, after the wafer is formed by the front-end process, it enters the packaging stage. The process is divided into wafer fixing, wafer cutting, die bonding, lead frame soldering, wire bonding, sealing, plating, and post-forming inspection. Printing. The wafer is fixed to the die-bonding process, and the wafer is adhered to a tape layer stretched and fixed by the frame, and then the wafer is cut into fixed-size grains by a south-speed cutting wheel, and then the top of the structure is removed from the die. The device is topped with a die layer under the tape layer, and the die is peeled off by a suction device and placed on the die pad. Referring to Figure 1, there is shown a schematic plan view of a conventional die-off structure. As shown, the conventional die-off structure 100 is used to disengage a die 1 from a tape layer 2 having an adhesive face 21 and a top face 22, wherein the die 1 is adhered to Adhesive surface of the tape layer 2. The die detachment structure 100 includes a suction mechanism 3 and a top device 4. Wherein the suction M320125 mechanism 3 has a nozzle 31 which is maintained at a predetermined distance from the die 1 of the adhesive surface 2 of the tape layer 2. The top device 4 has a thimble 41 that maintains a predetermined spacing from the top surface 22 of the tape layer 2 and corresponds to the die 1°. Referring to Figure 2, it shows the action of the conventional die-off structure. Schematic diagram showing the ejector top die of the top device. As shown, the ejector pin 41 is disposed at one end of the top device 4. The thimble 4 of the top device 4 is φ φ through the tape layer 2 to form the die 1 , so that the contact area between the die 1 and the tape layer 2 is reduced, and the die 丨 and the tape layer 2 are relatively in this state. The adhesion is also reduced. When the adhesive force of the tape layer 2 to the die i is lower than the minimum attractive force of the suction mechanism 3, the nozzle 31 of the suction mechanism 3 facilitates the peeling of the crystal grain on the tape layer 2 〇 [New content] The technical problem to be solved by the present invention
然而’以上述習知之晶粒脫離結構，其頂制裝置係以一 頂針做為頂彻之ϋ具。於製程中，頂制裝置以—頂制力使 頂針及膠帶層接觸，使晶粒及膠帶層間之接觸面積減少，以 降低膠帶層對晶粒之黏著力。但頂針使用時具有消耗 性’頂針持續長時間使用容易使其針端純化 :::=觸面積無法有效減少，導致吸取機構 =時未注意其運作狀態，甚至有使頂針斷裂或破壞:」 .M352125 緣此，本創作之目的即是提供一種半導體晶粒之超音波 脫離結構，用以使一晶粒以超音波震動進而脫離於一膠帶 層。 本創作之另一目的是提供一種半導體晶粒之超音波脫 離結構，具有可長時間持續使用不需更換之頂制結構。 本創作解決問題之技術手段 本創作為解決習知技術之問題所採用之技術手段係以 一種半導體晶粒之超音波脫離結構，用以使一晶粒脫離於一 膠帶層，膠帶層具有一黏附面及一頂制面。晶粒脫離結構係 包括有一吸取機構及一頂制裝置，其中吸取機構具有一吸 嘴，吸取機構之吸嘴與膠帶層之黏附面之晶粒保持一預定間 距。頂制裝置具有一超音波產生器，頂制裝置之超音波產生 器輕接觸於膠帶層之頂制面。頂制裝置之超音波產生器以超 音波使晶粒及膠帶層相互震動並使晶粒及膠帶層間粘性下 降，當晶粒部份脫離膠帶層時，吸取機構之吸嘴於膠帶層剝 離晶粒。 本創作對照先前技術之功效 經由本創作所採用之技術手段，可以使得超音波晶粒脫 離結構之頂制裝置在不需破壞膠帶層之狀態下，即可使晶粒 及膠帶層間之接觸面積減少，降低膠帶層對晶粒之黏著力。 因此頂制裝置便不具有鈍化之現象，進而可長時間持續使 用，且不會有操作人員設定錯誤產生頂制裝置之頂制器具產 .M352125 生斷裂現象，防止破壞產品使其生產良率下降。再者，因頂 制裝置產生之超音波為一穩定輸出功率，可對晶粒進行一貫 性之加工，以維持每一個產品之品質保持於一種穩定的狀 態。由以上述之功效，頂制裝置因其穩定性及持久性，並大 幅簡化生產流程，進而達成增加經濟效益之功效。 本創作所採用的具體實施例，將藉由以下之實施例及附 呈圖式作進一步之說明。 w 【實施方式】 參閱第3圖所示’其係顯示本創作半導體晶粒之超音波 脫離結構之平面示意圖。如圖所示，半導體晶粒之超音波脫 離結構200係用以使-晶粒！脫離於一膠帶層2。膠帶層2 係為-薄膜’其具有-黏附面21及―頂制面22。膠帶層2 之黏附面21具有黏性，且晶粒！係黏附於膠帶層2之黏附 面2卜在本實施例中，膠帶層2係為一藍膜，但除了以藍膜 » 作為膠帶層2外，亦可以具有光感之膠材所構成，如UV膠 ,帶°uv㈣具有用紫外線照射後純降低之特性，可於取 晶過程前預先將UV膠帶以紫外線照射，使晶粒K容易於 膠帶層2上脫離。 半導體晶粒之超音波脫離結構係包括有一吸取機 構3及-頂制裝置4’其中吸取機構3具有—吸嘴η，頂制 裝置4具有一超音波產生器42。吸取機構3之吸嘴31與膠 帶層2之黏附面21之晶粒！保持—預定間距。頂制裝置4 之（曰波產生器42輕接觸於缪帶層2之頂制面並對應於 该晶粒l 參閱第4圖所示，其係翔千 ^ 顯不本創作半導體晶粒之超音波 脫離結構之動作示意圖，用 曰饮 . a ^ ;不頂制裝置之超音波產生器 以超音波使晶粒及膠帶層相 之韶一 動。如圖所示，半導體晶粒 田甘咖 貝制裝置4之超音波產生器42利 用其内設之振盪器及放大器所 於 斤口，由振盪器產生能量再以 =岐心轉換成高頻能量即產生一超音波u，且頂制裝 之超音波產生器42由其額定動力決定加工範圍。頂制 ^ 4之超音波產生H 42經由適當設定其超音❹之加工 範圍及輪出功率，並以超音波U產生之振齡用使晶粒】 及膠帶層2間相互震動。 頂制裝置4之超音波產生器42以超音波㈣盈晶粒工 及膠帶層2間相互震動’使晶粒i及膠帶層2間之黏性下降 2晶粒1部份脫離膠帶層2。本實施例中，頂制裝置4之超 曰波產生器42係為一超音波探頭，但亦可係為其他超音波 輸出器具。 參閱第5圖所示，其係顯示本創作半導體晶粒之超音波 脫離結構之動作示意圖，用以顯示吸取機構之吸嘴將晶粒吸 入。半導體晶粒之超音波脫離結構2〇〇之頂制裝置4之超音 波產生器41產生超音波u ’並以超音波u之振盪作用帶動 晶粒1及膠帶層2相互震動’使晶粒1及膠帶層2間之黏性 下降且晶粒1部份脫離膠帶層2。當膠帶層2對晶粒1之黏 著力低於吸取機構3最小吸引力時，吸取機構3之吸嘴31 便於膝帶層2上剝離晶粒1。在本實施例中，吸取機構3係 M352125 經由例如-真空吸引機提供其真空吸力，但也可係為其他具 有吸力之震置’吸取機構3之吸嘴呈—圓錐形體或圓柱形 體，並在圓錐形體或圓柱形體之頂部開設有一貫孔，用以導 通吸取機構3之真空吸引機所輸送之真空吸力。 由以上之實施例可知，本創作所提供之半導體晶粒之超 音波脫離結構確具產業上之利用價值，故本創作業已符合於 專利之要件。惟以上之敘述僅為本創作之較佳實施例說:、， 凡精於此項技藝者當可依據上述之說明而作其它種種之改 良，惟這些改變仍屬於本創作之創作精神及以下所界定之 利範圍中。 【圖式簡單說明】 第1圖係顯示習知之晶粒脫離結構之平面示意圖； 第2圖係顯示習知之晶粒脫離結構之動作示意圖，用以顯示 頂制裝置之頂針頂制晶粒； # 第3圖係顯示本創作半導體晶粒之超音波脫離結構之平面示 意圖； ^第4®係齡摘作半導體晶歡超音波脫離結構之動作示 意圖，用以顯示頂制裝置之超音波產生器以超音波使 晶粒及膠帶層相互震動； 第5圖係顯示本創作半導體晶粒之超音波脫離結構之動作示 意圖，用以顯示吸取機構之吸嘴將晶粒吸入。 【主要元件符號說明】 M352125 100、200 超音波脫離結構 1 晶粒 2 膠帶層 21 黏附面 22 頂制面 3 吸取機構 31 吸嘴 4 頂制裝置 41 頂針 42 超音波產生器 U 超音波 -11 -However, in the above-described conventional crystal grain detachment structure, the ejector is made of a thimble as a top cooker. In the process, the top device contacts the thimble and the tape layer with a topping force to reduce the contact area between the die and the tape layer to reduce the adhesion of the tape layer to the die. However, the thimble is consumable when used. 'The thimble is easy to use for a long time. It is easy to clean the needle end:::=The contact area cannot be effectively reduced, resulting in the suction mechanism=not paying attention to its working state, or even breaking or destroying the thimble:". M352125 Therefore, the purpose of this creation is to provide an ultrasonic detachment structure of a semiconductor die for vibrating a die from a layer of tape. Another object of the present invention is to provide an ultrasonic de-isolation structure for a semiconductor die having a top structure that can be used for a long period of time without replacement. The technical means for solving the problem of the present invention is a method for solving the problem of the prior art by using an ultrasonic detachment structure of a semiconductor die for separating a die from a tape layer, and the tape layer has an adhesion. Face and a top noodle. The die release structure includes a suction mechanism and a top device, wherein the suction mechanism has a nozzle, and the suction nozzle of the suction mechanism maintains a predetermined distance from the die of the adhesive layer of the tape layer. The top device has an ultrasonic generator, and the ultrasonic generator of the top device is in light contact with the top surface of the tape layer. The ultrasonic generator of the top device vibrates the die and the tape layer with each other by ultrasonic waves and reduces the viscosity between the die and the tape layer. When the die portion is separated from the tape layer, the suction nozzle of the suction mechanism peels the die from the tape layer. . Compared with the prior art, the creation method can make the contact area between the die and the tape layer can be reduced by the technical means adopted by the present invention, so that the top device of the ultrasonic crystal grain is separated from the structure without destroying the tape layer. , reduce the adhesion of the tape layer to the grains. Therefore, the top device does not have the phenomenon of passivation, and thus can be used continuously for a long time, and there is no operator setting error. The top device of the top device is produced. The M352125 is broken, preventing the product from being damaged and the production yield is lowered. . Furthermore, since the ultrasonic waves generated by the top device are a stable output power, the crystal grains can be processed consistently to maintain the quality of each product in a stable state. Thanks to the above-mentioned effects, the top device is greatly simplified in terms of its stability and durability, and the production process is greatly simplified, thereby achieving an effect of increasing economic efficiency. Specific embodiments of the present invention will be further illustrated by the following examples and the accompanying drawings. [Embodiment] Referring to Fig. 3, a schematic plan view showing the ultrasonic detachment structure of the semiconductor chip of the present invention is shown. As shown, the ultrasonic detachment structure 200 of the semiconductor die is used to make the die! Detach from a layer of tape 2. The tape layer 2 is a film - which has a - adhesion surface 21 and a top surface 22. The adhesive surface 21 of the tape layer 2 is viscous and has a grain! Adhesive surface 2 adhered to the tape layer 2 In the present embodiment, the tape layer 2 is a blue film, but in addition to the blue film» as the tape layer 2, it can also be composed of a light-sensitive adhesive material, such as UV glue with °uv (4) has the property of pure reduction after irradiation with ultraviolet rays, and the UV tape can be irradiated with ultraviolet rays before the crystal extraction process, so that the crystal grains K are easily detached from the tape layer 2. The ultrasonic detachment structure of the semiconductor die includes a suction mechanism 3 and a top device 4', wherein the suction mechanism 3 has a suction nozzle η, and the top device 4 has an ultrasonic generator 42. The die of the suction nozzle 31 of the suction mechanism 3 and the adhesive surface 21 of the adhesive tape layer 2! Hold—predetermined spacing. The top device 4 (the chopper generator 42 is in light contact with the top surface of the tape layer 2 and corresponds to the die l as shown in Fig. 4, which is a super-excellent semiconductor die The schematic diagram of the action of the sound wave off the structure, using the sip. a ^; the ultrasonic generator of the non-top device uses the ultrasonic wave to make the grain and the tape layer phase move. As shown in the figure, the semiconductor die Tian Gai coffee bean system The ultrasonic generator 42 of the device 4 uses the built-in oscillator and amplifier to generate energy, and then converts the energy into high frequency energy to generate an ultrasonic wave u, and the top device is super-shaped. The sound generator 42 determines the processing range from its rated power. The ultrasonic generation of the top system ^4 is set by appropriately setting the processing range and the rounding power of the ultrasonic sound, and the crystal length is generated by the ultrasonic wave U. 】 and the tape layer 2 vibrate each other. The ultrasonic generator 42 of the top device 4 vibrates with the ultrasonic wave (four) and the two layers of the tape layer 2 to reduce the viscosity between the die i and the tape layer 2 The granule 1 is partially detached from the tape layer 2. In this embodiment, the super-chopper of the top device 4 The living device 42 is an ultrasonic probe, but can also be used as another ultrasonic output device. Referring to FIG. 5, it is a schematic diagram showing the action of the ultrasonic separation structure of the semiconductor chip of the present invention for displaying the suction mechanism. The nozzle sucks the die. The ultrasonic generator of the semiconductor die is separated from the structure. The ultrasonic generator 41 of the top device 4 generates the ultrasonic wave u' and drives the die 1 and the tape layer by the oscillation of the ultrasonic wave u. 2 mutual vibration 'the viscosity between the die 1 and the tape layer 2 is lowered and the die 1 is partially separated from the tape layer 2. When the adhesion of the tape layer 2 to the die 1 is lower than the minimum attractive force of the suction mechanism 3, the suction is performed. The nozzle 31 of the mechanism 3 facilitates the peeling of the die 1 on the knee belt layer 2. In the present embodiment, the suction mechanism 3 is M352125 which provides its vacuum suction via, for example, a vacuum suction machine, but can also be used as a shock absorber. The suction nozzle of the suction mechanism 3 is a conical body or a cylindrical body, and a constant hole is opened at the top of the conical body or the cylindrical body for guiding the vacuum suction transmitted by the vacuum suction machine of the suction mechanism 3. From the above embodiment It can be seen that The ultrasonic separation structure of the semiconductor die provided by the creation has industrial use value, so the creation operation has been in accordance with the requirements of the patent. However, the above description is only the preferred embodiment of the creation: The skilled person can make other improvements according to the above description, but these changes still belong to the creative spirit of the creation and the scope defined by the following. [Simplified illustration] Figure 1 shows the conventional crystal Schematic diagram of the particle detachment structure; Fig. 2 is a schematic view showing the operation of the conventional detachment structure of the die to show the apex top grain of the top device; #Fig. 3 shows the ultrasonic detachment of the created semiconductor die Schematic diagram of the structure; ^The 4th-year-old abstracted as a schematic diagram of the operation of the semiconductor crystal oscillator ultrasonic detachment structure, used to show that the ultrasonic generator of the top device vibrates the die and the tape layer with each other by ultrasonic waves; The schematic diagram showing the action of the ultrasonic detachment structure of the created semiconductor die is used to show that the suction nozzle of the suction mechanism sucks the die. [Main component symbol description] M352125 100, 200 ultrasonic separation structure 1 die 2 tape layer 21 adhesion surface 22 top surface 3 suction mechanism 31 nozzle 4 top device 41 thimble 42 ultrasonic generator U ultrasonic -11 -