TWM337842U - Improved structure of side-view LED package - Google Patents

Improved structure of side-view LED package Download PDF

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Publication number
TWM337842U
TWM337842U TW96220958U TW96220958U TWM337842U TW M337842 U TWM337842 U TW M337842U TW 96220958 U TW96220958 U TW 96220958U TW 96220958 U TW96220958 U TW 96220958U TW M337842 U TWM337842 U TW M337842U
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Taiwan
Prior art keywords
emitting diode
light
type light
groove
improved structure
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TW96220958U
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Chinese (zh)
Inventor
Chung-Chuan Hsieh
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Everlight Electronics Co Ltd
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Application filed by Everlight Electronics Co Ltd filed Critical Everlight Electronics Co Ltd
Priority to TW96220958U priority Critical patent/TWM337842U/en
Publication of TWM337842U publication Critical patent/TWM337842U/en

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Abstract

A improved structure of side-view LED package including a base having a front cavity on a side thereof and a rear cavity on the another side thereof, two conductive pins fixed in the base, at least a LED chip electrically disposed on the conductive pins in the front cavity and a Zener chip electrically disposed on the conductive pins in the rear cavity, a first sealing portion disposed in the front cavity to protect the LED chips, a second sealing portion disposed in the rear cavity to protect the Zener chip, and a lens cap disposed on the side of the base with the front cavity to cover the front cavity and the LED chip.

Description

M337842 ' 八、新型說明: -【新型所屬之技術領域】 本新型是有關於一種發光二極體之封裝結構,且特別 是有關於一種側面型之發光二極體結構。 【先前技術】 發光二極體(Light Emitting Diode,LED),是一種特殊 的二極體,可分為上視型(top-view )或侧面型(side_view ) 馨 之發光二極體,具有效率高,壽命長,不易破損等傳統光 源無法與之比較的優點。發光二極體被施以正向電壓時, 可產生電致發光效應,而發出不連續的單色光。若改變所 採用半導體材料的化學組成成分時,便可使發光二極體發 出在近紫外線、可見光或紅外線的光。多半用以指示燈、 顯示板等之應用;近來也被用作照明之應用,如··白光 LED。M337842 ' VIII. New description: - [New technical field] The present invention relates to a package structure of a light-emitting diode, and in particular to a side-type light-emitting diode structure. [Prior Art] Light Emitting Diode (LED) is a special type of diode that can be divided into top-view or side_view bright LEDs with efficiency. High, long life, and not easy to break, the advantages of traditional light sources can not be compared. When the light-emitting diode is applied with a forward voltage, an electroluminescence effect is generated, and discontinuous monochromatic light is emitted. When the chemical composition of the semiconductor material used is changed, the light-emitting diode can emit light in the near ultraviolet, visible or infrared light. Mostly used for applications such as indicators, display panels, etc.; recently also used as lighting applications, such as white LEDs.

一般習知之發光二極體均將其ESD防護元件放置於 籲 發光二極體之同一側,使得發光二極體于發光時,其ESD 防護元件可適時提供發光二極體晶片不受ESD影響的保 護,然而,ESD防護元件可能會遮蔽發光二極體晶片些許 的光源,導致發光二極體之出光效率有限,浪费了發光二 極體晶片所發出之光源,故,如何解決上述之缺點及不便, 而有效提升發光二極體之出光效率,以設計出一種改良式 發光二極體結構,便是此業界所亟欲解決之課題。 【新型内容】 6 M337842 一種侧面型發光二極體之改 提供不同之出光角度以及降 因此本新型的目的在提供 良結構,甩以提高出光效率、 低ESD防護元件之遮光影響。 根據本新型之上述目的,提出_種側面型發光二極體 之改良結構’係於此二導電接腳上注膠形成一底座,使得 底座之兩對應㈣卿成—前_及―後凹槽,其中此二 導電接狀-端分卵定於底蘭,絲互面對,另端則Generally, the light-emitting diodes have their ESD protection components placed on the same side of the light-emitting diodes, so that the ESD protection components of the light-emitting diodes can timely provide the LEDs without ESD. Protection, however, the ESD protection component may obscure the light source of the LED chip, resulting in limited light-emitting efficiency of the LED, and wasting the light source emitted by the LED chip. Therefore, how to solve the above disadvantages and inconveniences However, effectively improving the light-emitting efficiency of the light-emitting diode to design an improved light-emitting diode structure is a problem that the industry is eager to solve. [New content] 6 M337842 A side-type light-emitting diode is modified to provide different light-emitting angles and drops. Therefore, the purpose of the present invention is to provide a good structure for improving the light-emitting efficiency and the light-shielding effect of low ESD protection components. According to the above object of the present invention, it is proposed that the improved structure of the side-type light-emitting diodes is formed on the two conductive pins to form a base, so that the two corresponding bases (four) are formed into a front groove and a rear groove. , wherein the two conductive joint-ends are set in the bottom, the silks face each other, and the other end

以相反之方向伸出底座外,且此二導電接腳—端之兩側分 別顯露於前、後凹槽内,並於前凹槽㈣氣連接至少一個 發光二極體晶片,再於後凹槽㈣氣連接—電磁波防護晶 片,再於前凹槽内注膠形成第一封裝部,以供保護發光二 極體晶片,於後凹槽内注膠形成第二封裝部,以供保護電 磁波防護晶片,最終再於底座上具有前凹槽之一侧覆蓋有 一透鏡蓋’透鏡蓋用以調整發光二極體晶片所發出光線之 出光角度。 根據本新型之一實施例中,該透鏡蓋可呈單峰之圓弧 狀’可供發光二極體晶片所發出之光線集中於該透鏡蓋 後,而由該透鏡蓋發射出去。 根據本新型之另一實施例中,該透鏡蓋可呈雙峰之圓 弧狀,其中雙峰特徵之形狀可供發光二極體晶片所發出之 光線透過該透鏡蓋擴散地發射出去。 綜上所知,本新型將電磁波防護晶片遠離發光二極 體’使得發光二極體其中一方向所發出之光線,便不再被 電磁波防護晶片所遮蔽,如此,便可提高出光效率,降低 ESD防護元件之遮光影響,而透鏡蓋更可有效地提供不同 7 M337842 之出光角度。 【實施方式】 以下將以圖式及詳細說明清楚說明本新型之精神,如熟 悉此技術之人員在瞭解本新型之較佳實施例後,當可由本新 型所教示之技術,加以改變及修飾,其並不脫離本新型之精 神與範圍。 本新型係一種側面型發光二極體之改良結構,請參閱第 卜2圖所示,第1圖係繪示本新型侧面型發光二極體之立體 圖,第2圖係繪示本新型側面型發光二極體之側邊剖面圖。 其結構至少包含一底座1、二導電接腳3、第一封裝部111、 第二封裝部131及透鏡蓋5,此底座1係於具有此二導電接 腳3之模具内灌注一膠材(如:具環氧樹脂之膠材)所形成, 使得底座1之兩對應側分別形成一前凹槽11及一後凹槽 13,其中此二導電接腳3之一端分別於此底座1内相互面對, 其一面面對前凹槽11,並顯露於前凹槽11,而另一面則面對 後凹槽13,並顯露於後凹槽13,此二導電接腳3之另端則分 別以相反之方向伸出底座1外。 同時,此二導電接腳3面對前凹槽11之一面,可供排列 至少一個發光二極體晶片7(LEDchip),並與各發光二極體 晶片7電氣連接,各發光二極體晶片7分別以一第一導線71 打線至對應之導電接腳3上,使各發光二極體晶片7分別電氣 連接對應之導電接腳3,而使得各發光二極體晶片7因此可對 外發光。而此一導電接腳3面對後凹槽13内之一面,可供放 置一電磁波防護晶片9 ( Zener chip ),並與電磁波防護晶片9 8 M337842 電氣連接,電磁波防護晶片9以一第二導線91打線至另一導 電接腳3上’分別電氣連接對應之導電接腳3,而使得此電磁 波防5蔓晶片9可因此防止發光二極體晶片7受到電磁波的干 擾。 ^而第—封裳部111具透光性,其材質為摻有螢光粉之 4材勝材可為防紫外光之石夕膠(,或非紫外光 之%氧樹脂(Epoxy resins),係形成於前凹槽丨丨内’不 用乂口疋及保濩發光二極體晶片7,其内之螢光粉並可 反射各發光二極體晶片7所發出光線,加強發出先線之強 度而第一封裝部131亦為一種膠材(如:矽膠或樹脂) 係开y成於後凹槽内,用以固定及保護電磁波防護晶片9。 而透鏡蓋5設置於底座1具有前凹槽1;1之一側,而覆 蓋第一封裝部111,如此,每當各發光二極體晶片7發出 光線時’由於透鏡蓋5外部表面之弧度不同,使得各發光 二極體晶片7所發出光線之角度因折射而可達成不同之角 度,因此,以達提升出光之效率。 /、中透鏡蓋5外部形狀之不同,戶斤改變之出光角度也 大不相同’請參閱第3圖所示,第3厨係繪示本新型側面 型發光二極體具有第一圓弧體外觀示意圖。例如上述透鏡蓋 5可朝外呈現出單峰突出狀之第一圓弧體5丨(稱聚焦型透 鏡)’使得透鏡蓋5可供發光二極體晶片7所發出之光線 集中於該透鏡蓋5上,而最終由該透鏡蓋5發射出去,形 成聚集之發出光線,以提升發出先線之強度,·或者請參閱 弟4圖所示,第4圖係繚示本新型側面型發光二極體具有第 二圓弧體外觀示意圖。本新型之透鏡蓋5可朝外呈現'出雙 9 M337842 峰突出狀之第二圓弧體53 (稱擴散型透鏡),其雙峰圓弧 ,之雙峰間具有-凹陷部53〇,由於此凹陷部53〇於透鏡 ,5之外部表面區分出第一區域531及第二區域说,= 得發光二極體晶片7所發出之光線可分別由第一區域Μ】 或第二區域532以不同之方向透過透鏡蓋5擴散地發射出 去,使得形成擴散之發出光線,以擴大發出光線之照射區 域 < ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ 、/η 由於本新型移動電磁波防護晶片9至遠離發光二極體 > 晶片7之位置,使得發光二極體晶片7任何方向所發出之 光線’便排除被電磁波防護晶片9所遮蔽之可能性,如此, 便可提高出光效率,降低電磁波防護晶片9之遮光影響。 加上聚焦型及擴散型透鏡蓋5之設計揭露,使得各發光二 極體晶片7所發出光線之角度因折射而可達成不同之角 度,因此,提供許多出光之不同性能。 雖然本發明已以一較佳實施例揭露如上,然其並非用 以限定本發明,任何所屬技術領域中具有通常知識者,在 藝 不脫離本發明之精神和範圍内,當可作各種之更動與潤 . 飾,因此本發明之保護範圍當視後附之申請專利範圍所界 定者為準。 【圖式簡單說明】 為讓本發明之上述和其他目的、特徵、優點與實施例 能更明顯易懂,所附圖式之詳細說明如下: 第1圖係繪示本新型側面型發光二極體之立體圖。 M337842 第2圖係繪示本新型側面型發光二極體之側邊剖面圖。 第3圖係繪示本新型側面型發光二極體具有第一圓弧 體外觀示意圖。 第4圖係繪示本新型侧面型發光二極體具有第二圓弧 體外觀示意圖。 53 :第二圓弧體 530 ··凹陷部 531 ··第一區域 532 ··第二區域 7:發光二極體晶片 71 :第一導線 9 ·電磁波防護晶片 91 :第二導線 【主要元件符號說明】 1 :底座 • 11 ··前凹槽 111 :第一封裝部 13 :後凹槽 131 :第二封裝部 3:導電接腳 5 :透鏡蓋 51 :第一圓弧體Extending from the outside of the base in opposite directions, and the two sides of the two conductive pins are respectively exposed in the front and rear grooves, and the at least one light-emitting diode wafer is connected to the front groove (four), and then recessed. Slot (four) gas connection - electromagnetic wave protection chip, and then injecting glue into the front groove to form a first encapsulation portion for protecting the LED chip, and injecting a glue into the second groove to form a second encapsulation portion for protection against electromagnetic waves The wafer is finally covered on the base with a lens cover on one side of the front groove. The lens cover is used to adjust the light exiting angle of the light emitted by the LED chip. According to an embodiment of the present invention, the lens cover may have a single-peak arc shape, and the light emitted by the light-emitting diode chip is concentrated behind the lens cover and emitted by the lens cover. According to another embodiment of the present invention, the lens cover may have a bimodal circular arc shape, wherein the shape of the bimodal feature is such that light emitted by the LED chip is diffusedly emitted through the lens cover. In summary, the present invention keeps the electromagnetic wave protection chip away from the light-emitting diode', so that the light emitted by one of the light-emitting diodes is no longer blocked by the electromagnetic wave protection chip, thereby improving the light-emitting efficiency and reducing the ESD. The shielding element has a shading effect, and the lens cover is more effective to provide different light exit angles of 7 M337842. BRIEF DESCRIPTION OF THE DRAWINGS The spirit of the present invention will be clearly described in the following description and the detailed description of the preferred embodiments of the present invention, which can be modified and modified by the teachings of the present invention. It does not depart from the spirit and scope of the present invention. The present invention is an improved structure of a side-type light-emitting diode. Please refer to FIG. 2, FIG. 1 is a perspective view of the novel side-type light-emitting diode, and FIG. 2 is a side view of the present invention. A side cross-sectional view of the light-emitting diode. The structure comprises at least a base 1, two conductive pins 3, a first encapsulating portion 111, a second encapsulating portion 131 and a lens cover 5. The base 1 is filled with a rubber material in a mold having the two conductive pins 3 ( For example, a rubber material with an epoxy resin is formed, so that two corresponding sides of the base 1 respectively form a front groove 11 and a rear groove 13 , wherein one ends of the two conductive pins 3 are respectively in the base 1 Faced, one side faces the front groove 11 and is exposed on the front groove 11, and the other side faces the rear groove 13 and is exposed in the rear groove 13, and the other ends of the two conductive pins 3 are respectively Extend the base 1 in the opposite direction. At the same time, the two conductive pins 3 face one side of the front groove 11 for arranging at least one LED chip 7 and electrically connected to each of the LED chips 7 for each LED chip. 7 is electrically connected to the corresponding conductive pins 3 by a first wire 71, so that each of the light-emitting diode chips 7 is electrically connected to the corresponding conductive pins 3, so that the light-emitting diode chips 7 can be externally illuminated. The conductive pin 3 faces one side of the rear recess 13 for placing a Zener chip and is electrically connected to the electromagnetic wave protection chip 9 8 M337842. The electromagnetic wave protection chip 9 is a second wire. 91 is wired to the other conductive pin 3 to electrically connect the corresponding conductive pins 3, respectively, so that the electromagnetic wave preventing 5 vine wafer 9 can thereby prevent the light-emitting diode chip 7 from being disturbed by electromagnetic waves. ^ The first - cover skirt 111 is translucent, and its material is a material that is mixed with fluorescent powder. It can be UV-resistant stone epoxy resin (or non-ultraviolet light epoxy resin (Epoxy resins), Formed in the front groove ' 乂 乂 乂 乂 乂 乂 乂 乂 濩 濩 濩 濩 濩 濩 濩 濩 萤 萤 萤 萤 萤 萤 萤 萤 萤 萤 萤 萤 萤 萤 萤 萤 萤 萤 萤 萤 萤 萤 萤 萤 萤 萤 萤The first encapsulating portion 131 is also a kind of rubber material (such as silicone or resin) which is opened in the rear groove to fix and protect the electromagnetic wave protection chip 9. The lens cover 5 is disposed on the base 1 and has a front groove. One side of 1; 1 covers the first package portion 111, so that each time the light-emitting diode wafer 7 emits light, 'since the curvature of the outer surface of the lens cover 5 is different, so that each of the light-emitting diode wafers 7 is emitted The angle of the light can reach different angles due to refraction, so that the efficiency of the light is increased. /, The outer shape of the lens cover 5 is different, and the angle of the light changed by the household is also very different. Please refer to FIG. The third kitchen shows that the new side-type light-emitting diode has the first circle For example, the lens cover 5 can have a single arc-shaped first arcuate body 5 丨 (referred to as a focus lens), so that the lens cover 5 can be used to concentrate the light emitted by the LED chip 7. On the lens cover 5, and finally emitted by the lens cover 5, forming a concentrated light to enhance the strength of the first line, or please refer to Figure 4, Figure 4 shows the new side The type of the light-emitting diode has a second circular arc body appearance. The lens cover 5 of the present invention can present a second circular arc body 53 (called a diffusion type lens) with a double 9 M337842 peak protruding outward, and the bimodal circle The arc has a recessed portion 53〇 between the double peaks. Since the recessed portion 53 is disposed on the lens, the outer surface of the 5 distinguishes the first region 531 from the second region, and the light emitted by the light emitting diode wafer 7 is obtained. The first region Μ or the second region 532 may be diffusedly emitted through the lens cover 5 in different directions, so that the diffused light is generated to expand the illuminated area of the light. ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ , /η Because of this new The position of the moving electromagnetic wave protection chip 9 to the position away from the light-emitting diodes > the wafer 7 causes the light emitted by the light-emitting diode wafer 7 in any direction to eliminate the possibility of being shielded by the electromagnetic wave protection chip 9, so that The light-emitting efficiency is improved, and the light-shielding effect of the electromagnetic wave protection chip 9 is reduced. The design of the focus-type and diffusion type lens cover 5 is disclosed, so that the angle of the light emitted by each of the light-emitting diode chips 7 can be different by refraction. The present invention has been described in terms of a preferred embodiment. The present invention has been described above in terms of a preferred embodiment, and is not intended to limit the scope of the present invention. In the meantime, the scope of protection of the present invention is defined by the scope of the appended claims. BRIEF DESCRIPTION OF THE DRAWINGS The above and other objects, features, advantages and embodiments of the present invention will become more apparent and understood. Stereoscopic view of the body. M337842 Fig. 2 is a side cross-sectional view showing the novel side type light emitting diode. Fig. 3 is a schematic view showing the appearance of the first circular arc body of the novel side type light emitting diode. Fig. 4 is a schematic view showing the appearance of the second circular arc body of the novel side type light emitting diode. 53: second circular arc body 530 · recessed portion 531 ··first region 532 ··second region 7: light emitting diode wafer 71: first wire 9 · electromagnetic wave protection wafer 91 : second wire [main component symbol Description] 1 : Base • 11 · Front groove 111 : First encapsulation 13 : Rear groove 131 : Second encapsulation 3 : Conductive pin 5 : Lens cover 51 : First circular arc

1111

Claims (1)

M337842 九、申請專利範圍: 内 1.一種侧面型發光二極體之改良結構,其結構至少包含: 一底座’兩對應侧分別具有一前凹槽及一後凹样. ,導山電接腳,其-端相互面對,並分別固定於^ 該端之一面面對該前凹槽,並顯露於該前凹槽内,而該 端之另一面則面對該後凹槽,並顯露於該後凹槽内,豆另= 則分別以相反之方向伸出底座外;^ ^ ^ ^ ^ 7、 至少-個發光二極體晶片,分別放置於該二導電接腳 面對該前凹槽之位置,並電氣連接該些導電接腳· 之位置’並電氣連接談些導電接腳; 一第一封裝部,形成於該前凹槽内; 一第二封裝部,形成於該後凹槽内;以及 ㈣ϋ鏡蓋’設置於該底座具有該前凹槽之-側,而覆 I 封裝部及該至少一發光二極體晶片。 社槿2.ΐΓ請專利範圍第1項所述之側面型發光二極體之改良 ’其t該第-封裝部具透光性,為掺有螢光粉之膠材。 !士槿3,Hf專利範圍第2項所述之側面型發光二極體之改良 ”° ,八中該第一封裝部為矽膝或環氧樹脂。 社構4.H清專利範圍第1項所述之側面型發光二極體之改良 -構’其t該第二封裝部為石夕勝或或樹脂。 5·如申請專利範圍第】項所述之側面型發光二極體之改良 12 M337842 結構,其中該透鏡蓋朝外呈現出單峰突出狀之一第一圓弧 體,以供集中發射該至少一發光二極體晶片分別所發出之 光線。 6·如申請專利範圍第1項所述之侧面型發光二極體之改良 結構,其中該透鏡蓋朝外呈現出雙峰突出狀之一第二圓弧 體,以供擴散地發射該至少一發光二極體晶片分別所發出 之光線' B 7.如申請專利範圍第6項所述之側面型發光二極體之改良 結構,其中該第二圓弧體之雙峰間具有一凹陷部,該凹陷 部於該透鏡蓋之外部表面分別區分出兩區域,各區域分別 供該至少一發光二極體晶片所發出之光線以不同之方向發 射出去。 8·如申請專利範圍第1項所述之側面型發光二極體之改良 結構,其中該底座係為具環氧樹脂之膠材。 * 9.如申請專利範圍第1項所述之側面型發光二極體之改良 • 結構’其中該至少一發光二極體晶片分別以一第一導線打線至 對應之導電接腳上,而分別電氣連接對應之導電接腳。 10·如申請專利範圍第1項所述之側面型發光二極體之改 良結構,其中該電磁波防護晶片於該一導電接腳上,以一第二 導線打線至另一導電接腳上,分別電氣連接對應之導電接腳。 13M337842 IX. Patent application scope: 1. An improved structure of a side-type light-emitting diode, the structure of which comprises at least: a base's two corresponding sides respectively have a front groove and a rear concave shape. The ends thereof face each other and are respectively fixed to the front surface of the front surface of the front surface of the front end groove, and the other side of the end surface faces the rear groove and is exposed In the rear groove, the beans are further protruded outward in the opposite direction; ^ ^ ^ ^ ^ 7, at least one light-emitting diode wafer is respectively placed on the two conductive pins facing the front groove Positioning and electrically connecting the positions of the conductive pins · and electrically connecting the conductive pins; a first package portion formed in the front groove; a second package portion formed in the rear groove And (4) the mirror cover is disposed on the side of the base having the front groove, and covers the I package portion and the at least one light emitting diode chip.槿 槿 改良 改良 改良 改良 改良 改良 改良 改良 改良 改良 改良 改良 改良 改良 改良 改良 改良 改良 改良 改良 改良 改良 。 。 。 。 。 。 。 。 。 第 第 第 第 第 第 第 第 第 第 第 第!士槿3, the improvement of the side-type light-emitting diode described in item 2 of the Hf patent range"°, the first package part of the eighth part is the knee-length or epoxy resin. The structure of the 4.H clear patent range is 1 The improvement of the side-type light-emitting diode according to the item is as follows: the second package portion is Shi Xisheng or resin. 5. The improvement of the side-type light-emitting diode according to the patent application scope. 12 M337842 structure, wherein the lens cover presents a first circular arc body with a single-peak protrusion outwardly for concentrated emission of the light emitted by the at least one light-emitting diode wafer. 6· The improved structure of the side-type light-emitting diode according to the invention, wherein the lens cover presents a second arcuate body with a bimodal protrusion outwardly for diffusingly emitting the at least one light-emitting diode wafer respectively The improved structure of the side-type light-emitting diode according to claim 6, wherein the second circular arc has a concave portion between the double peaks, and the concave portion is disposed on the lens cover The outer surface distinguishes two regions, each of which is provided for at least The light emitted by a light-emitting diode chip is emitted in different directions. 8. The improved structure of the side-type light-emitting diode according to claim 1, wherein the base is an epoxy resin 9. The improvement of the side-type light-emitting diode according to claim 1, wherein the at least one light-emitting diode wafer is respectively wired to a corresponding conductive pin by a first wire, And the improved structure of the side-type light-emitting diode according to the first aspect of the invention, wherein the electromagnetic wave protection chip is on the conductive pin, and a second wire is used. Wire the wire to another conductive pin and electrically connect the corresponding conductive pins.
TW96220958U 2007-12-10 2007-12-10 Improved structure of side-view LED package TWM337842U (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8545061B2 (en) 2011-03-03 2013-10-01 Advanced Optoelectronic Technology, Inc. Light emitting diode device with lens having a cavity

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8545061B2 (en) 2011-03-03 2013-10-01 Advanced Optoelectronic Technology, Inc. Light emitting diode device with lens having a cavity
TWI414090B (en) * 2011-03-03 2013-11-01 Advanced Optoelectronic Tech Led light source

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