• M331727 八、新型說明： 【新型所屬之技術領域】 本新型關於一種電容傳聲器，玉s θ 更/、體而言係關於 種具有附加背音室和在PCB中聲孔”電容傳聲器。、 【先前技術】• M331727 VIII. New Description: [New Technology Field] This new type is about a condenser microphone, jade s θ is more /, the body is related to the kind of sound chamber with additional back chamber and sound hole in the PCB. Prior art
通常，廣泛用在行動通信終端和音頻系統中的電容傳 聲器包括：·元件ϋ隔膜/背板，它們用於構成隨著 聲壓而變化的電容ϋ 〇和用於對輸出信號進行緩衝的 JFET (接面場效應電晶體）。透過额序地將振動板、隔環、 絕緣環、背板和導電環插入在一殼體中，並最終插入pcB 且使該殼體的端部朝向PCB彎曲而組裝成傳統的電容傳 器。 · 、 近年來’提出將採用微機械加工的半導體加工技術作 . 為微設備的集成技術。該技術也被稱為MEMS (微機電系 統），其採用半導體製造工藝，特別是積體電路技術來製造 大小以μπι為單位的微感測器、致動器和機電結構。根據 • 透過微機械加工技術製造的MEMS晶片傳聲器，可以使傳 聲器的常規部件，例如振動板、隔環、絕緣環、背板和導 電環微型化並集成在一起，並且透過高精密微加工可使其 具有高性能、多功能、高穩定性和高可靠性。 第一圖是用在矽電容傳聲器中的傳統MEMS晶片結構 的示例圖。參照第一圖，MEMS晶片10具有這樣的結構， 其中利用MEMS技術在矽晶片14上形成背板13,並設置 5 M331727 振動板11，在振動板與背板之間具有間隔件12。背板 包括形成在其中的聲孔13a，並且通常透過微機械加 術和半導體晶片製造技術來製造MEMS晶片1〇。 第二圖2是顯示出採用MEMS晶片的傳統矽電容傳灰 器的侧剖面圖。參照第二圖，透過將MEMS晶片1(^nAsic (特定用途積體電路）晶片20安裝在PCB 40上並將它們插 入到其中形成有聲孔30a的殼體30中，而組裝成傳統的石夕電 容傳聲器1。但是，如第二圖所示’由於傳統的石夕電容傳声之 器1的背音室15由MEMS晶片10形成，背音室15的空間因作 為半導體晶片的MEMS晶片10的大小而極其小。因此，傳 聲器的音質變差。 【新型内容】 本新型的目的是提供一種^夕電容傳聲器，該秒電容傳 聲器具有附加背音室和在PCB中聲孔，以改善聲學特性。 為了實現上述目的，提供了一種矽電容傳聲器，該石夕 電容傳聲器包括··用於阻擋外部聲音流入的殼體；基底， 該基底包括音室殼體、具有由該音室殼體形成的附加背音 室的MEMS晶片、用於操作該MEMS晶片的ASIC晶片、 用於結合至該殼體的導電圖案，以及用於供外部聲音穿過 的聲孔；用於將所述殼體固定到該基底上的固定部件；和 用於黏接該殼體和該基底的黏接劑，其中在由該固定部件 固定的該殼體和該基底的整個結合表面上塗敷該黏接劑。 如上所述，本新型包括用於在MEMS晶片下方形成附 M331727 加月音至的音室殼體’以增大該MEMS日日日片的背音室空 間’，而提⑤靈敏度並改善THD ( _波失真）之類的噪 音問題。 /' 另外’當在基底中而不是殼體中形成聲孔時 法將傳聲器安裝在主pCB上。因此，安裝空間可 乂 外，由於该殼體透過鐳射焊接固定到PCB上 過黏接劑黏接，該殼體在輪過程中是固定的，從而= mi ’亚且由於高黏接強度而改善了機械穩固性。由 工成本和製造成本。傳相_·音’並降低了加 ^然參照本新型的錄實施方式具體顯 二新：但是本領域技術人員應明白在不背離本新二 _情況下可《麵式和細節上進行各穣變換。 【實施方式】 下面將參照附圖詳細說明本新型的上 目的、特性和優點。㈣及其他 聲器本新型第一實施方式的”容傳 ⑽中聲;L _電容傳聲器具有附加背音室和在 第一圖所示，根據第一實施方式的具北 152和聲孔_的石夕電容傳聲器ι〇〇具有 4 = 用於形成附加背音。構’其中In general, condenser microphones, which are widely used in mobile communication terminals and audio systems, include: • Components/separators/backplanes, which are used to form a capacitor 随着 that varies with sound pressure and a JFET that is used to buffer the output signal ( Junction field effect transistor). The vibrating plate, the spacer ring, the insulating ring, the back plate, and the conductive ring are inserted into a casing in sequence, and finally the pcB is inserted and the end of the casing is bent toward the PCB to be assembled into a conventional capacitor. · In recent years, it has proposed to use micromachining semiconductor processing technology as an integrated technology for micro devices. This technology, also known as MEMS (Micro Electro Mechanical Systems), uses semiconductor fabrication processes, particularly integrated circuit technology, to fabricate microsensors, actuators, and electromechanical structures in sizes of μπι. According to • MEMS wafer microphones manufactured by micromachining technology, conventional components of the microphone, such as vibrating plates, spacers, insulating rings, back plates and conductive rings, can be miniaturized and integrated, and can be made through high-precision micromachining. It has high performance, versatility, high stability and high reliability. The first figure is an exemplary diagram of a conventional MEMS wafer structure used in a tantalum condenser microphone. Referring to the first figure, the MEMS wafer 10 has a structure in which a back sheet 13 is formed on the tantalum wafer 14 by MEMS technology, and a 5 M331727 vibrating plate 11 is provided with a spacer 12 between the vibrating plate and the back plate. The backsheet includes acoustic holes 13a formed therein and the MEMS wafers are typically fabricated by micromechanical processing and semiconductor wafer fabrication techniques. The second Figure 2 is a side cross-sectional view showing a conventional tantalum capacitor asher employing a MEMS wafer. Referring to the second figure, the MEMS wafer 1 (specific use integrated circuit) wafers 20 are mounted on the PCB 40 and inserted into the housing 30 in which the sound holes 30a are formed, and assembled into a conventional stone eve. Capacitor microphone 1. However, as shown in the second figure, 'because the back chamber 15 of the conventional Shishi condenser microphone 1 is formed by the MEMS wafer 10, the space of the back chamber 15 is due to the MEMS wafer 10 as a semiconductor wafer. The size is extremely small. Therefore, the sound quality of the microphone is deteriorated. [New content] The purpose of the novel is to provide a condenser microphone with an additional back chamber and sound holes in the PCB to improve acoustic characteristics. In order to achieve the above object, a tantalum condenser microphone is provided, the cathode capacitor comprising: a housing for blocking the inflow of external sound; a substrate comprising a sound chamber housing having an additional formed by the sound chamber housing a MEMS wafer of a back chamber, an ASIC wafer for operating the MEMS wafer, a conductive pattern for bonding to the housing, and an acoustic hole for external sound to pass through; for housing the housing a fixing member fixed to the substrate; and an adhesive for bonding the case and the substrate, wherein the adhesive is applied to the entire bonding surface of the case and the substrate fixed by the fixing member. As described above, the present invention includes a case for forming a sound chamber housing 'with a M331727 plus moon sound to the bottom of the MEMS wafer to increase the back sound chamber space of the MEMS day and day film, while improving sensitivity and improving THD ( Noise problems such as _wave distortion. /' In addition, when the sound hole is formed in the substrate instead of the casing, the microphone is mounted on the main pCB. Therefore, the installation space can be removed, because the housing is transmitted through the laser. The solder is fixed to the PCB and the adhesive is adhered. The housing is fixed during the wheel process, thus reducing the mechanical stability of the machine due to the high adhesion strength. The labor cost and the manufacturing cost. _·音' and reduced the addition of the reference to the new embodiment of the recording is specifically new: but those skilled in the art should understand that the face and details can be changed without departing from the new two. [Embodiment] The following will refer to BRIEF DESCRIPTION OF THE DRAWINGS The above objects, features and advantages of the present invention are described in detail. (IV) and other sounds of the first embodiment of the present invention, the "acoustic transmission (10) medium sound; the L_ condenser microphone has an additional back sound chamber and is shown in the first figure, According to the first embodiment, the Shishi condenser microphone ι with the north 152 and the sound hole _ has 4 = for forming an additional back sound.
晶片1跑〜 用於驅動MEMS 的电仏號的ASIC晶片120佈置在具有導電 7 M331727 和連接端子142和144的PCB基底140上，MEMS晶片110佈置 在音室殼體150上，且殼體130附接到pcb基底140上。導電 圖案141和接地端子144經由通孔146連接。 音室殼體150增大了 MEMS晶片11〇的背音室空間，從 而提高了靈敏度並改善了 THD (總諧波失真）之類的嗓音 問題’其中在音室殼體150的上表面上佈置有通孔15加，其 用於使由MEMS晶片110形成的背音室15與附加背音室152 連通。MEMS晶片110具有如第一圖所示的結構，其中利用 • . . MEMS技術在矽晶片14上形成背板13，並形成振動板11， 使間隔件12位於振動板與背板之間。音室殼體15〇可以具有 方柱或圓柱體形狀，並且可以利用金屬或成型樹脂製造。 另外，雖然沒有顯示出，但是在音室殼體15〇上佈置有電力 配線’以將MEMS晶片110的電信號傳送給ASIC晶片120。 在PCB基底140上佈置有：上表面上具有通孔15〇&的音 室殼體150，該音室殼體用於形成附加背音室；MEMS晶片 110 ’該晶片附接到音室殼體15〇的通孔i5〇a上以擴展背音 室；以及ASIC晶片120，導電圖案141佈置在PCB基底140 的與殼體130接觸的部分上。用於供外部聲音穿過的聲孔 140a佈置在安裝音室殼體15〇的位置處，圍繞佈置在pCB基 底140的下表面處的聲孔14〇a佈置有密封墊148，用於透過 釺焊對聲孔140a進行孔密封，從而防止在主pCB (第七圖 中的附圖標記310)與傳聲器之間的空間中發生聲波失真。 附圖標記148a表示由密封墊148形成的聲孔。 殼體130為一個表面敞開的金屬殼體，其中殼體130具 r M331727 有圓柱體或方柱形狀。殼體130具有與PCB基底14〇的導電 圖案141接觸的端部並且還具有封閉的底表面，以防止外部 聲音流入。這樣將殼體130附接到pcb基底140上，即：使 • 金屬设體對準PCB基底140上形成的導電圖案141，然後 _ 透過鐳射焊接或點焊在至少兩點處進行點焊，之後利用環 氧樹脂之類的黏接劑164密封殼體130與PCB基底140的接 觸部分。附圖標記162表示焊點。 • 根據用於製造第一實施方式的矽電容傳聲器100的方 法，在將音室殼體150安裝在PCB基底140上，使得PCB基底 140的聲孔140a定位在附加背音室152的内侧，並將ASIC晶 片120安裝在PCB基底140上之後，將MEMS晶片11〇附接到 音室殼體150上，使得音室殼體150的通孔15〇a定位在 MEMS晶片110的背音室15的内侧。 之後’透過鐳射焊接將具有圓柱體或方柱形狀的殼體 130固定到PCB基底140的導電圖案141上。透過黏接劑164 鲁將殼體黏接到PCB基底140上。黏接劑164可以為導電環 - 氧樹脂、非導電環氧樹脂、銀膏、石夕、氨基甲酸乙酯、丙 烯和焊糊。 參照第二圖，具有由音室殼體15〇形成的附加背音室 152的MEMS晶片110以及ASIC晶片120安裝在PCB基底140 上’且方形或圓形導電圖案141佈置在與具有圓柱體或方柱 形狀的殼體130接觸的部分處。 由於PCB基底140的尺寸大於具有圓柱體或方柱形狀 的殼體130的尺寸，因此可以在大的PCB基底上自由地佈置 9 M331727 用於連接到外部設備上的連接焊盤或連接端子，並透過利 用傳統的PCB製造工藝設置銅膜然後鑛鎳或金來製造導電 圖案141。可以用陶瓷基底、FPCB基底或金屬pCB來代替 PCB 基底 140〇 具有圓柱體或方柱形狀的殼體130與PCB基底140接_ 的表面敞開，使得晶片組件可以容納在該殼體内，其中殼 體的上表面封閉’使得外部奪音不能流入。可以利用普舞j、 銅、不銹鋼、鋁或鎳合金來製造殼體130並可鍍金或銀。 在使殼體130對準PCB基底140的導電圖案HI之後，利 用鐳射焊機（未示出）用鐳射焊接作為接觸部分的一部分 的焊點162，以將殼體130固定到PCB基底140上。之後，透 過在整個接觸部分上塗敷黏接劑164完成傳聲器的組裝。所 述焊接是指在一個或多個點（優選為兩個.或四個點）進行 點焊，以將殼體130固定到PCB基底140上，而不是焊接殼 體130與PCB基底140的整個接觸表面。透過這種焊接而形 成在殼體130和PCB基底140之間的結合點被稱為焊點 162。殼體130透過焊點162固定到PCB基底140上，使得殼 體130在利用黏接劑164黏接或固化工藝期間不行動從而在 合適位置黏接。另外，導電圖案141透過通孔146連接到接 地端子144，並且當殼體130被黏接時，外部噪音被阻擋， 從而消除了噪音。 可以在PCB基底140的底表面上形成至少二到八個連 接端子142和144，以與外部設備連接，且每個連接端子142 和144透過通孔與晶片組件側電連接。具體地說，根據本新 > M331727 型的貫施方式，當連接端子142和144關於PCB基底140延伸 時，透過暴露表面可便於利用電焊料進行再加工。 根據本新型的實施方式，雖然將鐳射焊接例示為用於 • 將设體130固定到PCB基底140上的方法，但是也可以使用 • 釺焊或沖孔來將殼體130固定到PCB基底14〇上，並且可以 使用導電環氧樹脂、非導電環氧樹脂、銀膏、矽、氨基甲 酸乙酯、丙烯和焊糊作為黏接劑164。 • 第四圖是示出根據本新型第二實施方式的石夕電容傳聲 器的側剖面圖，該矽電容傳聲器具有附加背音室和在PCB 中的聲孔。第一實施方式的矽電容傳聲器1〇〇與第二實施方 式的石夕電容傳聲器100 /的不同之處在於聲孔14〇a形成在 ， PCB基底140中的位置，其中在第一實施方式的情況下，聲 - 孔140a形成在由音室殼體150形成的附加背音室ι52的位置 處，而在第二實施方式的情況下，聲孔14〇a遠離音室殼體 150形成在音室殼體15〇與ASIC晶片120之間。 ⑩ 因此，第一實施方式的矽電容傳聲器100具有這樣的背 - 式結構，其中外部聲音透過PCB基底140的聲孔14〇a到達附 • 加背音室152，而第二實施方式的矽電容傳聲器1〇〇-具有 這樣的結構，其中外部聲音經過PCB基底140的聲孔140a然 後經過殼體130中的空間到達MEMS晶片11〇。根據第一實 施方式，在第一圖所顯示的MEMS晶片的結構中，較佳的 • 是背板13和振動板11的位置可交換。 • 根據第二實施方式的矽電容傳聲器100/，由於除了聲 孔140a的位置之外其構造與第一實施方式的矽電容傳聲器 11 M331727 100的相同，因此省略額外進行詳細描述。 第五圖是根據本新型的方柱形附加背音室的示例圖， 而第六圖是根據本新型的圓柱體形附加背音室的示意圖。 如第五圖和第六圖所示’用於形成附加背音室152的音 室殼體150可以具有方柱150,和圓柱體15〇/ /的形狀，且 在方柱ΜίΤ或圓柱體150…的上部佈置有通孔⑽，以 形成通向MEMS晶片11〇的背音室15的路徑。 可以透過將具有不同形狀的殼體13〇附接到pCB基底 140上，來製造具有不同形狀的矽電容傳聲器1〇〇。八§][(：晶 片120和MEMS晶片110安裝在pCB基底14〇上。MEMS晶片 110包括由音至设體150形成的附加背音室152。例如，殼體 可以具有圓柱體形狀、方柱形狀、在其一端具有翼部的圓 柱體形狀’或者在其一端具有翼部的方柱形狀。 第七圖是顯示出根據本新型第一實施方式的一個實施 例的侧剖面圖，其中具有形成在元件表面上的連接端子的 傳聲器安裝在主PCB上。 如第七圖所示，根據可選的第一實施方式的矽電容傳 耸裔’在透過焊接將圓柱體或方柱形狀的殼體13〇固定到比 該殼體大的PCB基底140上之後，透過黏接劑164黏接殼體 130。在PCB基底140的元件侧佈置有連接端子m2和144， 用於連接至供安裝傳聲器的產品的主pCB 31〇的連接焊盤 320。可以形成至少二至八個連接端子。附圖標記162表示 焊點。當連接端子延伸到基底的側壁或除該側壁外還延伸 到το件側相對表面時，會改善電焊料的熱傳遞，從而便於 12 M331727 進行再加工。 供女I梦電谷傳聲裔的產品的主PCB 310包括圓形或 方形插入孔310a，用於安裝矽電容傳聲器的殼體13〇。佈置 • 有與佈置在傳聲器的PCB基底140上的連接端子142和144 相對應的連接焊盤320。 如弟七圖所示’根據安裝在主PCB 310上的石夕電容傳聲 裔’主PCB 310的連接焊盤320透過焊料330連接到連接端子 鲁.I42和I44，並且在基底14〇的組件侧中央突出的殼體130插 入到主PCB 310的插入孔310a中。 因此，根據本新型的安裝方法，由於在傳聲器的PCB 基底上突出的殼體130被插入到主PCB 310的插入孔3l〇a 中，因此安裝後的整體高度小於其中連接端子形成在供安 裝主PCB的元件側的相對側上的傳統傳聲器，從而可以有 效地利用安裝產品所需的空間。 第八圖是顯示出根據本新型第二實施方式的一個實施 籲 例的侧剖面圖，其中傳聲器安裝在主PCB上。 ^ 如第八圖所示，根據本新型第二實施方式的矽電容傳 . 聲器的構造與第四圖所顯示的相同，並且供安裝第二實施 方式的矽電容傳聲器的主PCB 300包括用於供形成外部源 的聲音透過的聲孔300a、圍繞聲孔300a佈置的密封墊302、 以及與傳聲器的連接端子142和144相對應的連接焊盤304。 因此，在使形成在第二實施方式的矽電容傳聲器的 PCB基底140上的聲孔140a與主PCB 300上的聲孔300a對 準’並使連接端子142和144與連接焊盤304對準之後，透過 13 M331727 焊料330將石夕電容傳聲器附接到 主PCB 300上。 【產業利用性】 本新型包括用於在MEMS晶片下方形成附加背音室 的音室殼體，以增大MEMS晶片的背音室空間，從而提高 了靈敏度並改善了 THd(_波失真）之類的噪音問題二 【圖式簡單說明】 第H在⑪電容傳聲器中的傳統MEMS晶片姓播 的示意圖； 、’ 第二圖是顯示出採用施廳晶片的傳統石夕電容哭 的侧刻面圖， ％ 第三圖是顯示趣據本新型第—實施方式㈣ 聲器的側娜目，_電容傳鞋具有附 專 PCB中聲孔； 在 第四圖是顯示出根據本新型第二實施方式 聲器的側剖面圖，财電容傳聲器具有附 =傳 PCB中聲孔； 曰主和在 第五圖是根據本新型的方柱形附立 第六圖是根據本新型的圓柱體形附加;音 ; |、思、圖 第七圖是顯示出根據本新型第一實施方式的一個* 例的侧刻面圖’其中具有形成在元件表:施 傳聲器安裝在主PCB上； 0運接柒子的 14 > M331727 第八圖是顯示出根據本新型第二實施方式的一個實施 例的側剖面圖，其中傳聲器安裝在主PCB上。 【主要元件符號說明】 1 矽電容傳聲器 * 10 MEMS晶片 11 振動板 • 12 間隔件 13 背板 13a 聲孔 14 矽晶片 15 背音室 20 ASIC晶片 30 PCB 30a 聲孔 • 40 PCB 100 定向矽電容傳聲器 100’ 定向矽電容傳聲器 110 MEMS晶片 120 ASIC晶片 130 殼體 - 140 PCB基底 : 140a 聲孔 141 導電圖案 15 M331727 142 連接端子 144 連接端子 146 通孔 148 密封墊 148a 附圖標記 150 音室殼體 150， 方柱 150” 圓柱 150a 通孔 152 附加背音室 162 焊點 164 黏接劑 300 主PCB 300a 聲孔 302 密封墊 304 連接焊盤 310 主PCB 310a 插入孔 320 連接焊盤 330 焊料The wafer 1 runs ~ an ASIC wafer 120 for driving the MEMS electric number is disposed on a PCB substrate 140 having a conductive 7 M331727 and connection terminals 142 and 144, the MEMS wafer 110 is disposed on the sound chamber housing 150, and the housing 130 Attached to the pcb substrate 140. The conductive pattern 141 and the ground terminal 144 are connected via a via 146. The sound chamber housing 150 increases the back sound chamber space of the MEMS wafer 11 turns, thereby improving sensitivity and improving a problem of arpeggio such as THD (Total Harmonic Distortion), in which the upper surface of the sound chamber housing 150 is disposed There is a through hole 15 for communicating the back chamber 15 formed by the MEMS wafer 110 with the additional back chamber 152. The MEMS wafer 110 has a structure as shown in the first figure in which a back sheet 13 is formed on the tantalum wafer 14 using a MEMS technique, and a vibrating plate 11 is formed such that the spacer 12 is located between the vibrating plate and the back plate. The sound chamber housing 15A may have a square or cylindrical shape and may be made of metal or molding resin. Further, although not shown, power wirings ' are disposed on the sound chamber casing 15'' to transmit electrical signals of the MEMS wafer 110 to the ASIC wafer 120. Disposed on the PCB substrate 140 is a sound chamber housing 150 having a through hole 15 〇 & on the upper surface for forming an additional back chamber; the MEMS wafer 110 ' attaching the wafer to the sound chamber housing The via hole i5〇a of the body 15 is extended to extend the back sound chamber; and the ASIC wafer 120 is disposed on a portion of the PCB substrate 140 that is in contact with the case 130. The sound hole 140a for the external sound to pass through is disposed at a position where the sound chamber case 15〇 is mounted, and a soundproof hole 14〇a disposed at a lower surface of the pCB substrate 140 is disposed with a gasket 148 for transmitting The welding performs hole sealing on the sound hole 140a, thereby preventing sound wave distortion in the space between the main pCB (reference numeral 310 in the seventh figure) and the microphone. Reference numeral 148a denotes a sound hole formed by the gasket 148. The housing 130 is a metal housing having an open surface, wherein the housing 130 has a shape of a cylinder or a square cylinder. The housing 130 has an end portion in contact with the conductive pattern 141 of the PCB substrate 14A and also has a closed bottom surface to prevent external sound from flowing in. This attaches the housing 130 to the pcb substrate 140, that is, the metal substrate is aligned with the conductive pattern 141 formed on the PCB substrate 140, and then spot-welded at least two points by laser welding or spot welding, after which The contact portion of the housing 130 with the PCB substrate 140 is sealed with an adhesive 164 such as an epoxy resin. Reference numeral 162 denotes a solder joint. • According to the method for manufacturing the tantalum condenser microphone 100 of the first embodiment, the sound chamber housing 150 is mounted on the PCB substrate 140 such that the sound hole 140a of the PCB substrate 140 is positioned inside the additional back sound chamber 152, and After the ASIC wafer 120 is mounted on the PCB substrate 140, the MEMS wafer 11 is attached to the sound chamber housing 150 such that the through holes 15A of the sound chamber housing 150 are positioned in the back chamber 15 of the MEMS wafer 110. Inside. The housing 130 having a cylindrical or square pillar shape is then fixed to the conductive pattern 141 of the PCB substrate 140 by laser welding. The housing is adhered to the PCB substrate 140 through the adhesive 164. The adhesive 164 may be a conductive ring - an oxy-resin, a non-conductive epoxy resin, a silver paste, a stone, a urethane, a propylene, and a solder paste. Referring to the second figure, the MEMS wafer 110 having the additional back chamber 152 formed by the sound chamber housing 15 and the ASIC wafer 120 are mounted on the PCB substrate 140' and the square or circular conductive pattern 141 is disposed with and/or having a cylinder or The portion of the square pillar-shaped housing 130 is in contact. Since the size of the PCB substrate 140 is larger than the size of the housing 130 having a cylindrical or square pillar shape, the connection pads or connection terminals of the 9 M331727 for connection to an external device can be freely arranged on a large PCB substrate, and The conductive pattern 141 is fabricated by arranging a copper film using a conventional PCB manufacturing process and then depositing nickel or gold. The ceramic substrate, the FPCB substrate, or the metal pCB may be used in place of the PCB substrate 140. The surface of the housing 130 having a cylindrical or square pillar shape is open to the surface of the PCB substrate 140 so that the wafer assembly can be housed in the housing. The upper surface of the body is closed 'so that the external sound can not flow in. The housing 130 can be made of Pu, j, copper, stainless steel, aluminum or a nickel alloy and can be plated with gold or silver. After the housing 130 is aligned with the conductive pattern HI of the PCB substrate 140, a solder joint 162 as a part of the contact portion is laser-welded by a laser welder (not shown) to fix the housing 130 to the PCB substrate 140. Thereafter, the assembly of the microphone is completed by applying the adhesive 164 over the entire contact portion. The soldering refers to spot welding at one or more points (preferably two or four points) to fix the housing 130 to the PCB substrate 140 instead of soldering the entire housing 130 and the PCB substrate 140. Contact the surface. The joint formed between the casing 130 and the PCB substrate 140 by such soldering is referred to as a solder joint 162. The housing 130 is secured to the PCB substrate 140 by solder joints 162 such that the housing 130 does not act during the bonding or curing process with the adhesive 164 to bond in place. In addition, the conductive pattern 141 is connected to the ground terminal 144 through the through hole 146, and when the casing 130 is bonded, external noise is blocked, thereby eliminating noise. At least two to eight connection terminals 142 and 144 may be formed on the bottom surface of the PCB substrate 140 to be connected to an external device, and each of the connection terminals 142 and 144 is electrically connected to the wafer assembly side through the through hole. Specifically, according to the present embodiment of the new > M331727 type, when the connection terminals 142 and 144 are extended with respect to the PCB substrate 140, the exposed surface can facilitate reworking with the electric solder. According to the embodiment of the present invention, although the laser welding is exemplified as a method for fixing the body 130 to the PCB substrate 140, it is also possible to fix the housing 130 to the PCB substrate 14 by using soldering or punching. Above, and a conductive epoxy resin, a non-conductive epoxy resin, a silver paste, a ruthenium, a urethane, a propylene, and a solder paste may be used as the adhesive 164. • The fourth figure is a side cross-sectional view showing a Shihua condenser microphone according to a second embodiment of the present invention, the tantalum condenser microphone having an additional back chamber and a sound hole in the PCB. The tantalum condenser microphone 1 of the first embodiment is different from the Shishi condenser microphone 100 of the second embodiment in that the sound hole 14A is formed at a position in the PCB substrate 140, wherein in the first embodiment In this case, the sound-hole 140a is formed at the position of the additional back chamber ι52 formed by the sound chamber housing 150, and in the case of the second embodiment, the sound hole 14A is formed away from the sound chamber housing 150. The chamber housing 15 is interposed between the ASIC wafer 120. Therefore, the tantalum condenser microphone 100 of the first embodiment has a back-type structure in which external sound passes through the sound hole 14〇a of the PCB substrate 140 to the additional back sound chamber 152, and the tantalum capacitor of the second embodiment The microphone 1 has a structure in which external sound passes through the sound hole 140a of the PCB substrate 140 and then passes through the space in the casing 130 to reach the MEMS wafer 11A. According to the first embodiment, in the structure of the MEMS wafer shown in the first figure, it is preferable that the positions of the back plate 13 and the vibration plate 11 are exchangeable. The tantalum condenser microphone 100/ according to the second embodiment is identical in construction to the tantalum condenser microphone 11 M331727 100 of the first embodiment except for the position of the sound hole 140a, and therefore detailed description is omitted. The fifth figure is an exemplary view of a square cylindrical additional back sound chamber according to the present invention, and the sixth figure is a schematic view of a cylindrical shaped additional back sound chamber according to the present invention. As shown in the fifth and sixth figures, the sound chamber housing 150 for forming the additional back sound chamber 152 may have a square pillar 150, and a shape of a cylinder 15//, and may be in a square cylinder or a cylinder 150. The upper portion of ... is provided with a through hole (10) to form a path to the back chamber 15 of the MEMS wafer 11A. A tantalum condenser microphone 1 having a different shape can be fabricated by attaching a housing 13 having a different shape to the pCB substrate 140. VIII] [(: The wafer 120 and the MEMS wafer 110 are mounted on the pCB substrate 14A. The MEMS wafer 110 includes an additional back chamber 152 formed by the sound to the body 150. For example, the housing may have a cylindrical shape, a square column a shape, a cylindrical shape having a wing at one end thereof, or a square column shape having a wing at one end thereof. The seventh figure is a side sectional view showing an embodiment according to the first embodiment of the present invention, in which formation is formed The microphone of the connection terminal on the surface of the component is mounted on the main PCB. As shown in the seventh figure, the tantalum capacitor according to the optional first embodiment transmits a cylindrical or square-shaped housing through welding. After being fixed to the PCB substrate 140 larger than the casing, the casing 130 is bonded through the bonding agent 164. On the component side of the PCB substrate 140, connection terminals m2 and 144 are arranged for connection to the microphone for mounting. The connection pad 320 of the main pCB 31 of the product. At least two to eight connection terminals may be formed. Reference numeral 162 denotes a solder joint. When the connection terminal extends to or in addition to the side wall of the substrate, it extends to the side of the member. surface The heat transfer of the solder can be improved to facilitate reworking of the 12 M331727. The main PCB 310 for the product of the female Imagine Valley has a circular or square insertion hole 310a for mounting the housing of the tantalum condenser microphone. Arrangement • There is a connection pad 320 corresponding to the connection terminals 142 and 144 disposed on the PCB substrate 140 of the microphone. As shown in the figure of the seventh figure, 'According to the Shishi capacitors mounted on the main PCB 310 The connection pads 320 of the PCB 310 are connected to the connection terminals Lu. I42 and I44 through the solder 330, and the housing 130 protruding in the center of the assembly side of the substrate 14A is inserted into the insertion hole 310a of the main PCB 310. Therefore, according to the present invention The mounting method is such that since the housing 130 protruding on the PCB substrate of the microphone is inserted into the insertion hole 31a' of the main PCB 310, the overall height after mounting is smaller than that in which the connection terminal is formed on the component side for mounting the main PCB The conventional microphone on the opposite side can effectively utilize the space required for mounting the product. The eighth figure is a side cross-sectional view showing an embodiment of the second embodiment of the present invention, The microphone is mounted on the main PCB. ^ As shown in the eighth figure, the configuration of the tantalum condenser according to the second embodiment of the present invention is the same as that shown in the fourth figure, and is used to mount the second embodiment. The main PCB 300 of the condenser microphone includes a sound hole 300a through which sound for forming an external source is transmitted, a gasket 302 disposed around the sound hole 300a, and a connection pad 304 corresponding to the connection terminals 142 and 144 of the microphone. After aligning the sound hole 140a formed on the PCB substrate 140 of the tantalum condenser microphone of the second embodiment with the sound hole 300a on the main PCB 300 and aligning the connection terminals 142 and 144 with the connection pad 304, 13 M331727 Solder 330 attaches the Shishi condenser microphone to the main PCB 300. [Industrial Applicability] The present invention includes a sound chamber housing for forming an additional back sound chamber under the MEMS wafer to increase the back sound chamber space of the MEMS wafer, thereby improving sensitivity and improving THd (_wave distortion). Class noise problem 2 [Simple diagram description] The schematic diagram of the traditional MEMS wafer surname of the H in the 11 condenser microphone; 'The second figure shows the side facet of the traditional Shishi capacitor crying using the Shifang wafer The third figure shows the side of the sounder according to the new type of embodiment (4), the _ capacitor transmission shoe has the sound hole in the special PCB; the fourth figure shows the sound according to the second embodiment of the present invention. Side cross-sectional view of the device, the condenser microphone has the sound hole in the PCB; the 曰 main and the fifth figure are attached according to the square column of the present invention. The sixth figure is a cylindrical shape addition according to the present invention; Figure 7 is a side plan view showing an example of a first embodiment of the present invention. The device has a side view of the component table: the microphone is mounted on the main PCB; ; M331727 The eighth picture shows the root A side sectional view of a second embodiment of the new embodiment of the present embodiment, wherein a microphone mounted on a main PCB. [Main component symbol description] 1 Tantalum condenser microphone * 10 MEMS wafer 11 vibration plate • 12 spacer 13 back plate 13a sound hole 14 矽 wafer 15 back chamber 20 ASIC wafer 30 PCB 30a sound hole • 40 PCB 100 directional tantalum condenser microphone 100' directional tantalum condenser microphone 110 MEMS wafer 120 ASIC wafer 130 housing - 140 PCB substrate: 140a sound hole 141 conductive pattern 15 M331727 142 connection terminal 144 connection terminal 146 through hole 148 gasket 148a reference numeral 150 sound chamber housing 150 , square column 150" cylinder 150a through hole 152 additional back chamber 162 solder joint 164 adhesive 300 main PCB 300a sound hole 302 gasket 304 connection pad 310 main PCB 310a insertion hole 320 connection pad 330 solder