TWM328662U - Wafer warming-up equipment for graphite electric conduction and heat conduction - Google Patents

Wafer warming-up equipment for graphite electric conduction and heat conduction Download PDF

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Publication number
TWM328662U
TWM328662U TW96215664U TW96215664U TWM328662U TW M328662 U TWM328662 U TW M328662U TW 96215664 U TW96215664 U TW 96215664U TW 96215664 U TW96215664 U TW 96215664U TW M328662 U TWM328662 U TW M328662U
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Taiwan
Prior art keywords
heating
graphite
interface
wafer
heating interface
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TW96215664U
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Chinese (zh)
Inventor
zhong-you Xie
tian-zheng Wang
Ming-Zhu Xie
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Nat Univ Chin Yi Technology
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Priority to TW96215664U priority Critical patent/TWM328662U/en
Publication of TWM328662U publication Critical patent/TWM328662U/en

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Description

M328662 八、新型說明: 【新型所屬之技術領域】 _ 本創作係有關一種石墨導電導熱之晶圓加熱裝置,尤 指一種以石墨材料作為加熱介面,而具有導電導熱快之優 ^ 點的晶圓加熱裝置。 -【先前技術】 Φ 如第4圖所示,為習用之晶圓之加熱裝置3其内部之 組成示意圖,主要係以電熱絲3 1於加熱裝置3中以同心 圓或其他形狀纏繞成形,藉此於通電後電熱絲3 1可發熱 而對加熱裝置3上之晶圓(圖中未示)作加熱。 然而,以電熱絲3 1作為熱源產生之工具係有下列之 缺點,當電熱絲其纏繞之方式不佳,其於加熱裝置表上之 ‘熱度會有不均之情況,如此將會影響晶圓其加熱時之品 、質,使得晶圓產生受熱溫度不均之情況;或是其電熱絲其 • 製作時所採之材料品質佳時,易造成於高溫加熱時產生熔 ^ 斷之情形,如此亦會使得晶圓其加熱之行程受到影響。 緣是,可知習用技術尚有加以改良之空間。 【新型内容】 本創作之主要目的,在於解決上述的問題而提供一種 石墨導電導熱之晶圓加熱裝置,係藉由採用石墨作為加熱 之介面,此係利用石墨其導電導熱性佳之優點,以使晶圓 受加熱裝置之加熱時而能達到整體均溫之效果。 5 M328662 ,述之目的,本劍作係包括一機台,該機台頂部 一 石墨加熱介面,該第一石墨加熱介面頂部設有 加熱表面,且該第一石墨加熱介面與一供電裝置連 一而及i、電裝置並設於該機台上,且該供電裝置對該第 :墨加熱介面供予電能’而使該第一石墨加熱介面產生 …、月匕以對該第-加熱表面上之晶圓作加熱。 本ii作之上述及其他目的與優點,不難從下述所選用 實把例之詳細朗與_巾,獲得深入了解。 當然,本創作在某些另件上,或另件之安排上容許有 所不同’但所選用之實施例,則於本說明書中,予以詳細 說明,並於附圖中展示其構造。 【實施方式】 請參閱第1圖至第3 @ ’圖中料者為本創作所選用 之實施例結構’此僅供說明之用,在專利申請上並不受此 種結構之限制。 以下係本創作『石墨導電導熱之晶圓加熱裝置』之實 施例說明,請先參閱第1圖,其中該晶圓加熱褒置係包含 :機台1 ’該機台1頂部設有一第一石墨加熱介面U, 该第一石墨加熱介面i i頂部設有一第一加熱表面工工 1,且該第一石墨加熱介面1ί與一供電裝置i 2連接, 而該供電裝置12並設於該機台1上,且該供電裝2 =該第-石墨加熱介面i工供予電能’而使該第一石墨加 熱介面11產生熱能以對該第一加熱表面i i i上之曰 M328662 2作加熱。在本實施例中,上述之第一石墨加熱介面1 1係為 一由石墨材料所構成之塊狀平台。 請續參閱第2圖,在本實施例中,於該機台i頂部與 •該第一石墨加熱介面1 1之間更設有一加熱平台1 3,而 *忒第一石墨加熱介面1 1係為一設於該加熱平台1 3上之 - 石墨材料層。 在使用上,不論疋上述之石墨材料層或是由石墨材料 魯斤構成之塊狀平台,皆可進行如此之加熱過程,即將晶圓 2置於該第一加熱表面1 1 1上,啟動該供電裝置丄2對 該第一石墨加熱介面1 1供電使其產生熱能,如此,因為 =墨材料本身具有優良導電及導熱之性質,故石墨可將熱 旎均勻散佈於其本身表面上,並使得其上之晶圓2能均勻 文熱,而達到所要求之溫度參數的製程標準。 冨然,本創作仍存在許多例子,其間僅細節上之變化。請參 φ ,第3圖,其係本創作之第二實施例,其中於該第一石墨加熱 |面11之上方更設有第二石墨加熱介面14,該第二石 f加熱介面14之底部具有一第二加熱表面141,該第 、第二加熱表面111、141係可上下相互靠近而抵 接於晶圓2之上下表面,且該第二石墨加熱介面1 4並另 與一供電裴置1 5連接,以對該第二石墨加熱介面1 4供 電加熱。 本第二實施例較之第一實施例,係在於增加了 一組第 一石墨加熱介面1 4,如此,可對晶圓2之上下表面同時 7 M328662 施以加熱,將有助於晶圓整體結構於加熱時之均溫性。並 有助於提升晶圓於研究時其溫度參數設定之準確度。 綜上所述,不論是第一實施例或是第二實施例之設計 ♦ ,均能提供晶·圓於加熱時穩定且均溫之加熱效果。 - 以上所述實施例之揭示係用以說明本創作,並非用以 - 限制本創作,故舉凡等效元件之置換仍應隸屬本創作之範 _ ’疇。 > 由以上詳細說明,可使熟知本項技藝者明瞭本創作的 確可達成前述目的,實已符合專利法之規定,爰提出專利 申請。 【圖式簡單說明】 第1圖係本創作之立體示意圖,係可見到第一石墨加熱介 面之一種實施態樣。 第2圖係本創作之立體示意圖,係可見到第一石墨加熱介 > 面之另一種實施態樣。 第3圖係本創作為採取上下方式對晶圓作加熱之實施態樣 不意圖。 第4圖係習用之晶圓加熱裝置其内部之電熱絲纏繞的示意 圖0 【主要元件符號說明】 (習用部分) 8 M328662 加熱裝置3 (本發明部分) 機台1 第一加熱表面111 加熱平台1 3 第二加熱表面141 鲁 晶圓2 電熱絲3 1 第一石墨加熱介面11 供電裝置12 第二石墨加熱介面14 供電裝置15M328662 VIII. New Description: [New Technology Field] _ This is a kind of graphite heating and heat conduction wafer heating device, especially a wafer with graphite material as heating interface and excellent electrical and thermal conductivity. heating equipment. - [Prior Art] Φ As shown in Fig. 4, a schematic diagram of the internal structure of the heating device 3 for a conventional wafer is mainly formed by winding a heating wire 3 in a concentric circle or other shape in the heating device 3, After the energization, the heating wire 31 can generate heat to heat the wafer (not shown) on the heating device 3. However, the tool produced by using the heating wire 31 as a heat source has the following disadvantages. When the heating wire is wound in a poor manner, the heat on the heating device may be uneven, which will affect the wafer. The quality and quality of the heating cause the wafer to be unevenly heated; or the heating wire used in the production of the heating wire is easy to cause melting at high temperature, so It also affects the heating of the wafer. The reason is that there is still room for improvement in the use of conventional technology. [New content] The main purpose of this creation is to solve the above problems and provide a graphite heating and heat conduction wafer heating device, which adopts graphite as a heating interface, which utilizes the advantages of graphite to have good electrical and thermal conductivity. When the wafer is heated by the heating device, the overall temperature uniformity can be achieved. 5 M328662, for the purpose of the description, the sword system comprises a machine platform, a graphite heating interface is arranged on the top of the machine, a heating surface is arranged on the top of the first graphite heating interface, and the first graphite heating interface is connected with a power supply device. And the i, the electric device is disposed on the machine, and the power supply device supplies the electric energy to the first ink heating interface, and the first graphite heating interface generates ..., the moon 匕 on the first heating surface The wafer is heated. The above and other objects and advantages of this ii are not difficult to obtain from the detailed descriptions of the following examples. Of course, the present invention allows for different 'on the other's parts, or the arrangement of the parts. However, the selected embodiment is described in detail in the present specification, and its construction is shown in the drawings. [Embodiment] Please refer to Fig. 1 to Fig. 3' for the structure of the embodiment selected for the author's creation. This is for illustrative purposes only and is not limited by this structure in the patent application. The following is a description of an embodiment of the present invention, "Graphite Conductive and Thermal Conductive Wafer Heating Device", please refer to FIG. 1 , wherein the wafer heating device includes: a machine 1 'the top of the machine 1 is provided with a first graphite a heating surface U, a first heating surface 1 is disposed on the top of the first graphite heating interface ii, and the first graphite heating interface 1 is connected to a power supply device i 2 , and the power supply device 12 is disposed on the machine 1 And the power supply 2 = the first graphite heating interface is supplied with electrical energy ', and the first graphite heating interface 11 generates thermal energy to heat the 曰M328662 2 on the first heating surface iii. In the present embodiment, the first graphite heating interface 11 is a block-shaped platform composed of a graphite material. Referring to FIG. 2 , in the embodiment, a heating platform 13 is further disposed between the top of the machine i and the first graphite heating interface 1 1 , and the first graphite heating interface 1 1 is It is a layer of graphite material disposed on the heating platform 13. In use, regardless of the above-mentioned graphite material layer or the block platform composed of the graphite material, the heating process may be performed, that is, the wafer 2 is placed on the first heating surface 1 1 1 to start the The power supply device 丄2 supplies power to the first graphite heating interface 11 to generate thermal energy. Thus, since the ink material itself has excellent electrical and thermal conductivity properties, the graphite can uniformly spread the enthalpy on its own surface and make The wafer 2 thereon can be evenly heated to achieve the process standard of the required temperature parameters. Of course, there are still many examples in this creation, only the details change. Please refer to φ, FIG. 3 , which is a second embodiment of the present invention, wherein a second graphite heating interface 14 is further disposed above the first graphite heating surface 11 , and the second stone f is heated at the bottom of the interface 14 There is a second heating surface 141. The first and second heating surfaces 111 and 141 are adjacent to each other to abut the upper surface of the wafer 2, and the second graphite heating interface 14 is connected to a power supply. 1 5 is connected to supply power to the second graphite heating interface 14 . Compared with the first embodiment, the second embodiment is characterized in that a set of first graphite heating interfaces 14 is added, so that the upper surface of the wafer 2 can be heated simultaneously with 7 M328662, which will contribute to the overall wafer. The temperature uniformity of the structure when heated. It also helps to improve the accuracy of the temperature parameter setting of the wafer during the study. In summary, both the first embodiment and the design of the second embodiment can provide a heating effect of the crystal and the circle being stable and uniform at the time of heating. - The disclosure of the above-described embodiments is used to illustrate the present invention and is not intended to limit the creation of the present invention. Therefore, the replacement of equivalent elements should still be subject to the scope of the present invention. > From the above detailed description, it will be apparent to those skilled in the art that the present invention can achieve the aforementioned objectives, and has been in compliance with the provisions of the Patent Law, and has filed a patent application. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a perspective view of the present invention, showing an embodiment of the first graphite heating interface. Fig. 2 is a perspective view of the present invention, showing another embodiment of the first graphite heating medium > Figure 3 is intended to be an implementation of the wafer heating up and down. Fig. 4 is a schematic diagram of the electric heating wire winding inside the conventional wafer heating apparatus. [Main component symbol description] (customized part) 8 M328662 Heating device 3 (part of the present invention) Machine 1 First heating surface 111 Heating platform 1 3 second heating surface 141 Lu wafer 2 heating wire 3 1 first graphite heating interface 11 power supply device 12 second graphite heating interface 14 power supply device 15

Claims (1)

M328662 九、申請專利範圍: 1 · 一種石墨導電導熱之晶圓加熱裝置,其係包括一機台, 該機台頂部設有一第一石墨加熱介面,該第一石墨加 熱介面頂部設有一第一加熱表面,且該第一石墨加熱 介面與一供電裝置連接,而該供電裝置並設於該機台 上,且該供電裝置對該第一石墨加熱介面供予電能, 而使該第一石墨加熱介面產生熱能以對該第一加熱表 面上之晶圓作加熱。 2·依申請專利範圍第1項所述之石墨導電導熱之晶圓加 熱裝置,其中於該機台頂部與該第一石墨加熱介面之 間更設有一加熱平台,而該第一石墨加熱介面係一設 於該加熱平台上之石墨材料層。 3·依申請專利範圍第1項所述之石墨導電導熱之晶圓加 熱裝置,其中該第一石墨加熱介面係為一由石墨材料 所構成之塊狀平台。 4·依申請專利範圍第1項所述之石墨導電導熱之晶圓加 熱裝置,其中於該第一石墨加熱介面之上方更設有第 二石墨加熱介面,該第二石墨加熱介面之底部具有一 第二加熱表面,該第一、第二加熱表面係可上下相互 靠近而抵接,且該第二石墨加熱介面並另與一供電裝 置連接,以對該第二石墨加熱介面供電加熱。M328662 IX. Patent application scope: 1 · A graphite conductive heat conduction wafer heating device, comprising a machine platform, a first graphite heating interface is arranged on the top of the machine, and a first heating is arranged on the top of the first graphite heating interface a surface, and the first graphite heating interface is connected to a power supply device, and the power supply device is disposed on the machine, and the power supply device supplies electrical energy to the first graphite heating interface, and the first graphite heating interface is Thermal energy is generated to heat the wafer on the first heated surface. The graphite conductive heat conduction wafer heating device according to claim 1, wherein a heating platform is further disposed between the top of the machine and the first graphite heating interface, and the first graphite heating interface system a layer of graphite material disposed on the heating platform. 3. The graphite conductive heat conduction wafer heating device according to claim 1, wherein the first graphite heating interface is a block platform composed of a graphite material. The graphite heating and heat conducting wafer heating device according to claim 1, wherein a second graphite heating interface is further disposed above the first graphite heating interface, and a bottom of the second graphite heating interface has a The second heating surface, the first and second heating surfaces are adjacent to each other to abut, and the second graphite heating interface is further connected to a power supply device to supply power to the second graphite heating interface.
TW96215664U 2007-09-17 2007-09-17 Wafer warming-up equipment for graphite electric conduction and heat conduction TWM328662U (en)

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TW96215664U TWM328662U (en) 2007-09-17 2007-09-17 Wafer warming-up equipment for graphite electric conduction and heat conduction

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TWM328662U true TWM328662U (en) 2008-03-11

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