M322699 (1) 九、新型說明 【新型所屬之技術領域】 本創作係關於具電漿形成機構之電漿處理裝置，特 別是關於：適合於半導體元件微加工之半導體製造裝置 以及LCD裝置等之利用電漿來進行加工之裝置。 【先前技術】 半導體元件之加工乃逐年在進行微細化，致對於加 工尺寸之精確度之要求亦逐趨嚴厲。一方面，在使用電 漿分解處理氣體以物理化學進行加工半導體晶圓之電漿 處理裝置，其裝置內部所形成具堆積性反應生成物等卻 會附著殘留於電漿室內壁，以致經常促使晶圓之處理狀 態實質上起變化。因此，隨著重疊多枚晶圓進行處理， 雖將裝置之輸入固定於相同條件，半導體元件之加工形 狀等亦會變化，而有無法穩定進行生產之問題。 > 爲對付如此問題，通常則藉可除去電漿室內壁附著 ^物之電漿加以清洗，或進行調節電漿室內壁溫度促使附 、 著物不易粘著等之對策。如此手法之大部分並無法充分 將晶圓之加工狀態保持於一定。 因此，晶圓之加工狀態繼續徐徐變化’使用者乃需 在加工形狀之變化成爲製造製品之問題程度嚴重之前， 進行解卸電漿處理裝置予以更換零件’或使用液體或超 音波予以洗淨。 晶圓加工狀態之變動原因除此種附著於內部之堆積 -5- M322699 (2) 膜以外，亦與處理系統之溫度等種種原因之變動有關連 。而如上述，進行檢測電漿處理裝置內部處理狀態之變 ^ 化，藉檢測結果採取清洗等對策，或採取將檢測結果回 饋於電漿處理裝置之輸入，以保持處理狀態爲一定之方 法。 此種電漿處理之變動之監視手段，例如 J P - A -1 0 -125660號公報（習知技術1)已有揭示。在該揭示例， • 卻顯示利用電漿處理特性與裝置電性信號之關係式以預 測裝置性能，或診斷電漿狀態之方法。其方法乃揭露將 表示三個電性信號與裝置電漿處理特性之關係近似式由 多重回歸分析加以求取之方法。又另一例則被揭露於特 開平1 1 - 8 73 2 3號公報。在該揭示例，卻顯示將裝設有 既存多數檢測器之一般檢測系統嵌入於電漿處理裝置， 藉其檢出信號之相關信號監視裝置狀態之方法。其相關 信號之形成方法乃揭露六個電性信號比之計算式。又另 # 一個揭示例係爲美國專利第5 65 8423號公報。在該揭示 " 例，卻顯示取進光或質量分析器之眾多信號予以生成相 _ 關信號而監視裝置狀態之方法。並以該相關信號之形成 方法乃揭露利用主成分分析之方法。 【新型內容】 〔新型欲解決之課題〕 惟JP-A- 1 0- 1 25660號公報之方法係將使多數處理條 件中若干輸入値予以變化之圖表上三個電性信號與處理 -6- M322699 (3) 回歸分析加以引導，致需測 實際運用頗爲困難。且未被 除了所建立典範式變爲無效 圓之重複處理而連續性變化 條件之處理特性採入於典範 性取得實驗，所以實際運用 號公報之方法雖是使用取自 測信號相關之信號以進行診 之取相關信號之方法卻爲採 故欲找出能正確監視對應多 之電漿處理裝置狀態之系統 5658423號說明書則提供一 料予以進行主成分分析以抓 電漿狀態之方法。惟由該揭 構造之晶圓以各種條件予以 有效實施方法卻需要另外的 種操作容易且可進行正確 特性之關係近似式利用多重 ^ 定處理特性之晶圓枚數太多 ^ 考量之電漿輸入値變動時， 之外，爲了將依存於隨著晶 * 之如堆積膜的觀測困難內部 ~ 式，需要龐大次數之處理特 極爲困難。 Φ 又，特開平1 1 — 87323 眾知多數檢測手段之多數檢 斷之一般性方法，但所揭示 取若干信號比之習知手法， 種變動原因可採取多樣狀態 的具體性實現手段至爲困難。 與此相異，美國專利第 種藉將自裝置所監視多量資 φ 住裝置狀態變動而監視多樣 ^ 示例，欲找出將具各種裝置 ^ 處理之實際電漿處理裝置之 辦法。 本創作之目的即在提供 處理之電漿處理裝置。 〔用以解決課題之手段〕 上述目的可藉利用容器內予以發生之電漿以進行試 M322699 (4) 料處理，而含有被配置於上述容器內其內側裝載上述試 ^ 料之透光性構件，與被設置於上述容器以受光上述透光 ^ 性構件內側光之光檢手段，且具有使用在處理上述試料 前自上述透光性構件內側光所檢出之資料及在處理上述 試料中自上述透光性構件內側光所檢出之資料以檢測上 述狀態之功能的電漿處理裝置加以達成。 又，可藉利用容器內予以發生之電漿以進行試料處 φ 理，而含有被配置於上述容器內其內側裝載上述試料之 透光性構件，與被設置於上述容器以受光上述透光性構 件內側光之光檢手段，且具有使用在處理上述試料前及 後自上述透光性構件內側光所檢出之資料以調節該_置 運轉之功能的電漿處理裝置加以達成。 可藉利用容器內予以發生之電漿以進行試料處理， 而含有被配置於上述容器內其內側裝載上述試料2胃％ 性構件，與被設置於上述容器以受光上述透光性構件內 φ 側光之光檢手段，且具有使用在處理上述試料前自 " 透光性構件內側光所檢出之資料及在處理上述巾自 - 上述透光性構件內側光所檢出之資料以調節上@ m # 生之功能的電漿處理裝置加以達成。 可藉利用容器內予以發生之電漿以進行試料處_， 而含有被配置於上述容器內其內側裝載上述_式|斗&胃％ 性構件，與被設置於上述容器以受光上述透光彳生_丨牛@ 側光之光檢手段，且具有使用在處理上述試料^ &彳麦自 上述透光性構件內側光所檢出之資料以調節上_胃_ # M322699 (5) 生之功能的電漿處理裝置加以達成。 更可藉含有對上述透光性構件內側予以照射所定輸 出光之照射手段，且藉該照射手段於上述處理前或後進 行照射上述所定輸出光加以達成。 更可藉在上述容器與上述透光性構件之間具有將上 述照射手段之照射光予以反射至上述光檢手段之反射手 段加以達成。 更可藉裝設有上述照射手段及上述光檢手段，且與 該等照射手段及光檢手段一起被予以裝設於上述容器之 裝設構件加以達成。 【實施方式】 以下，即參照圖示說明本創作之實施例。 在圖1顯示本創作之第一實施例。圖1爲顯示本創 作電漿處理裝置有關第一實施例之構成槪略縱向剖面圖 。在圖示，電漿處理裝置之本體100係具備處理室（處 理容器）1，與向其內側供應處理氣體之氣體供應手段2 ，以及可排出處理氣體且具控制處理室1內壓功能之氣 體排出手段3。又，處理室1內設有可支承處理對象之試 料4之試料台5，並具有在處理室1內形成電漿所需之電 漿形成手段6。而，在半導體製造裝置，試料4卻是晶圓 ，在L CD製造裝置，試料4則是L CD裝置。 電漿發生手段乃含有向容器1內傳送電磁波予以供 應之電磁波供應手段1 0 1，促使容器1內產生電場之天線 -9 - M322699 (6) 102，及促使發生磁場之磁控管103。且，試料台5爲使 * 因發生電漿所產生之反應物對向於試料側而由高頻電壓 ^ 之電源1 04予以施加高頻電壓。 該電漿處理裝置係設有裝置狀態檢測手段8。裝置狀 % 態檢測手段8卻具有，例如被設置於電漿形成手段6供 ' 電路徑之電流或電壓檢測器，或電流電壓相位差檢測器 ，或電力之前進波或反射波檢測器，或阻抗監控器等。 • 又，狀態檢測手段8則具有可檢測處理室1內由電 漿形成手段6所形成電漿之發光並予以生成其分析資料 之分析裝置。狀態檢測手段8雖以如可輸出被波長分解 之發射光譜之分光器能輸出多數信號之檢測器較宜，惟 如單色器之可取出單一波長光之檢測器亦無妨。分光器 輸出之發射光譜卻爲具有各波長之光強度之多數信號。 狀態檢測手段8亦可具有上述說明過以外之手段。 例如具有被設置於氣體供應手段之氣體流量計，或被設 # 置於處理室之質譜儀等亦可。且如下述，該狀態檢測手 ' 段8亦可具有自外部將雷射誘起之螢光或白色光等予以 - 導入處理室，以檢測通過產生有電漿之容器內空間或自 其反射之上述光狀態變化的手段。該狀態檢測手段8亦 可爲如有源探測器之自外部予以施加電性信號以檢測其 應答之手段。該等狀態檢測手段乃在每次所定間隔之時 間或被設定之若干每次取樣時間輸出顯示裝置狀態之信 號。 又’本實施例尙具有可接受上述狀態檢測手段8之 -10- M322699 (7) 輸出以調節裝置運轉之控制裝置9。該控制裝 調節例如對於具可發生促使產生電漿所需電 ' 之磁控管等之電漿形成手段6的電力輸入及 等之輸出大小。或可使用其他手段以調節所 輸出。例如，能自狀態檢測手段8以電漿進 中所發生所定波長光檢出之資料，再檢出處 應量之增減、速度或電漿強度等在容器內部 φ 應狀態，而發出電漿形成、停止或裝置起動 令，以調節裝置運轉。 圖2爲圖1所示實施例之處理容器周匯 圖。如該圖，處理容器（處理室）1內側設有 光性構件所形成零件之石英罩20 1，該石英罩 呈包圍於試料台5側方或上方周圍。藉如此 減輕該石英罩20 1內側空間由於形成電漿所 成物或化學反應所產生反應生成物之附著於^ • 壁面上，或由於電漿或反應生成物之削薄容I ' 面。 - 又，本實施例，在如此構成之容器1側 向容器1內側照射光之手段與可受光容器1 罩2 01內側）光之光檢手段。且，本實施例， 內側壁面上設有可將上述光之照射手段所照 向光檢手段反射之反射手段。 上述光檢手段202係被設於容器1側壁 器1側壁面上具有如後述爲受光石英罩20 1 :置9即進行 磁波或磁場 .切斷，或該 產生電漿之 :行試料處理 理有關之反 所發生之反 、停止之指 I說明用擴大 ‘由石英等透 201被配置 配置，則可 產生各種生 容器1內側 蓉1內側壁 壁上尙具有 內側（石英 更在容器1 射之光予以 上，而在容 內側光所需 -11 - M322699 (8) 之受光部。該受光部所接受之光即被傳至與受光部連結 之受光用纖維205。且，傳送於該受光用纖維205內之光 * 被供給與其連結之光分析裝置（後述），對容器內之光 進行分析予以檢出所需之資訊。 又，照射手段203與光檢手段同樣被配設於容器1 ' 側壁上，自未圖示可發射光之光源之光即透過導入用纖 維206被予以傳送，而由該照射手段203供給容器1內 Φ 部。該照射手段2 0 3之容器側卻具有如後述能將傳送過 來之光透過上述石英罩20 1予以照射於其內側而加以裝 設之光照射部。 況且，容器1之與上述光檢手段202、照射手段203 反側之側壁面上被配置有可接受容器1內（石英罩201 ) 之光並向光檢手段202反射所需之反射構件204。該反射 構件204爲抑制電漿或因其所發生反應生成物之附著， 或因此表面被削薄等加工，乃被設於石英罩20 1外側。 # 在本實施例，反射構件204雖由表面反射率較高之鏡面 ‘ 體予以構成，惟並非限定於此，只要予以選擇能滿足所 - 需功能之規格即可。又，其配置處所則需要爲光檢手段 202能以充分強度及量接受反射光之位置，而如能滿足之 ，則不必如本實施例被限定於光檢手段202、照射手段 2 03之對面側，亦可非在側壁面上予以配設於石英罩20 1 內部或容器1內側上面。 由光檢手段202所接受之光係如上述傳遞於受光用 纖維205內被供給分析裝置。並藉該分析裝置將所接受 -12- M322699 (9) 之光由眾知之能將光分爲各頻率（波長）獲取之分光手 段予以分光。如此以波長加以區分之光譜乃有對應其波 * 長（頻率）之反應及物質形成，藉評估該光譜之強度等 之量即可檢出與其對應之反應或生成物之生成狀態，例 如反應之量或速度等。例如，某波長之光譜強度、大小 '爲大時，可推想該波長對應之反應或生成物之量較大。 反之，該光譜之量變小時，則可加以判斷爲其對應之反 II 應變小，或反應結束、停止。 另，如是藉測定容器內部之電漿或因反應所產生之 光雖可檢出其電漿或反應之狀態，惟本實施例所測定之 光卻是透過上述石英罩201之光，爲隨著其透過而強度 及量已衰減者。於是，爲使用接受光欲正確檢測容器1( 石英罩201)內部之反應、電漿之狀態係需考慮該種光衰 減之影響以進行光之分析。又，上述石英罩201由於會 附著內側所形成電漿或反應所形成之生成物，或因此其 • 表面會受到削減等加工，故隨之光衰減亦受到影響而變 ^ 化。且石英罩201內側壁表面如附著物質時，由於附著 - 物導致其透過光之量及強度會大爲衰減，因此不考慮如 此情形即有被判斷內部發光減弱，進而被判斷反應已停 止或已結束之虞。 本實施例所記載之創作，乃是在電漿處理裝置及處 理方法，經考慮上述石英罩20 1內側等容器內側光在穿 過透光性構件時之衰減變化影響’而能以更加良好之精 確度進行評價內部反應者。 -13- M322699 (10) 圖3爲圖1所示實施例光檢手段202、發光（照射） • 手段203、反射構件204之詳細構成剖面顯示圖。其中， 、 圖3 ( a)爲反射構件204之構成縱向剖面顯示圖，圖3 ( b)爲光檢手段202、照射手段203之詳細構成擴大顯示 縱向剖面圖。 在本實施例，如圖3 ( b )所示，光檢手段202與發 光手段203係被接近配設於處理容器1之側壁上。尤其 H ，本實施例之光檢手段202與照射手段203被裝設於同 一裝設構件301。又，如上述，光檢手段202、照射手段 203則以光程略呈平行被裝設於容器內側壁面上，且受光 用纖維205、光導入用纖維206卻分別介場通道3 02略平 行被裝設於裝設構件301。即，在容器1側壁配設裝具有 光檢手段202、照射手段2 03之裝設構件301時，乃於該 等之間介設密封所需之密封用Ο型密封圈3 03，而將裝設 光檢手段202、照射手段203兩構件所需之兩者密封由一 • 個〇型密封圈3 03承擔之。藉此，光檢、照射手段之裝 ' 設變爲較容易，又可減少容器製造時之加工工程，以減 - 輕裝置之成本。 又，纖維205、206之光出□、光入口與石英罩201 外側面之間，係配置有石英玻璃等具透光性物質所構成 之構件端部石英玻璃3 04 (a) 、 （b)。該等突端構件 3 04 ( a) 、（ b)卻與上述纖維205、206端部連結被裝設 於裝設構件301，並在裝設構件3 01被裝設於容器1之狀 態下插入於容器1側壁構件所設之貫通孔內，而將光傳 -14 - M322699 (11) 送於纖維端部與石英罩201之間。ο型密封圈3 03亦被使 用於密封上述貫通孔。 • 在本實施例，容器1側壁則具有含該等纖維205、 2 06，裝設構件301，場通道3 02，端部石英玻璃3 04以 單元加以構成之觀察窗口。藉將以單元構成之觀察窗口 > 裝設於容器1，即可簡化裝設、加工等製造工程，以抑制 製造成本。 φ 圖4爲含有圖1所示實施例之電漿處理裝置的處理 系統槪略構成顯示圖。在本圖，經過裝置本體之容器1 所裝設上述觀察窗口 401自白色光源402傳送於導入用 纖維206之光，即由206端部介端部石英玻璃304 ( b) 被照射至容器1內側。所照射之光兩次穿過石英罩20 1 後，由設於容器1內側壁面上之反射構件204予以反射 並朝向觀察窗口 401之光檢手段202。 自反射構件204之光乃穿過石英罩201兩次後，介 Φ 端部石英玻璃304(a)由光檢手段202加以受光，並傳 • 送於受光用纖維205被供給與其連結之分析裝置403。分 - 析裝置403則將所供給之光利用發光頻譜計404予以分 光爲各波長（頻率）之光譜。且，將經過分光之光發送 至運算機（運算用處理器）405進行運算而算出其光譜強 度及量等之大小或特性。所算出光資訊卻被存儲於未圖 示之存儲手段，俾使在其後之裝置動作可加以利用。本 實施例雖將含該等發光頻譜計404、運算用處理器405之 分析裝置與白色光源402作爲同一裝置狀態檢測手段8 -15- M322699 (12) 一部分予以構成，惟作爲控制裝置一部分予以設置亦可 〇 • 如上述，使用電漿進行試料處理時容器1內所產生 之光，係含有該電漿中發生之各種化學反應或生成物之 生成反應之發光。分析裝置403即將被受光傳送之該容 器內之光予以分光爲各波長頻率）之光，並以光譜進行 測定而檢出其強度及量。 φ 被檢出光譜強度等之光有關資料卻被存儲可加以互 相比較。例如，就特定波長之光譜可利用時間序列之資 料變化予以檢出如對應於波長之反應開始、結束或狀態 之反應資訊。 本實施例即由分析裝置403進行上述反應資訊之檢 測，藉光通過石英罩201等透光性構件時之光衰減及該 光衰減隨著利用電漿進行處理處理時之變化，乃可抑制 對於容器內反應狀態之影響，而予以提昇反應之檢測精 鲁 確度。 ' 以下，就圖1實施例有關電漿處理裝置之處理順序 • 參照圖5加以說明。圖5爲圖1所示實施例有關電漿處 理裝置之含反應資訊檢測的試料處理順序流程顯示圖。 在本實施例，使用電漿之試料任意處理前後，係自照射 手段203向容器1內之石英罩201內予以照射所定光， 且利用接受該照射光所檢出之資料進行檢測處理反應， 或進行處理調節。 在本圖，步驟1爲將照射於容器內之所定光資訊予 -16- M322699 (13) 以預先取得之步驟。該照射光藉在處 長之照射量及強度等光資訊，而在以 ' ，予以受光適當地調節所測定之容器 施例，雖爲照射含多種波長之光而使 光只要是含有一或二以上之欲檢測對 _ ，非白色光亦無妨。 在步驟2，即由照射手段203將自 • 用纖維206傳送之光予以照射於容器 照射之光則通過石英罩201穿過整形 空間。此時，通常並不進行處理，故 生電漿。照射於容器內空間之光乃再 到達容器內側壁面所配置之反射構件 。被反射之光至少一部分即再度透過ΐ 空間及石英罩201後，到達光檢手段 所接受之光卻介纖維205被傳送至分初 • 被分光爲各種光波長（光譜）。 * 在步驟3，即就上述被分光爲光 -405予以算出各波長之光譜強度或大小 取得並存儲之光資料加以參照，經過 射於容器1內之光通過石英罩201等 例如，在本實施例照射於容器1內之 204予以反射至到達光檢手段202加以 四處穿過石英罩201。 如知道被照射之所定光通過該石5 理前加以存儲各波 後之步驟可利用之 內光資訊。在本實 用白色光，惟照射 象光之波長光即可 I光源402經過導入 1內。如上述，所 罩201內之容器內 該容器內空間不產 度通過石英罩201 204而被予以反射 ί英罩201、容器內 202被加以受光。 千裝置403，且在此 譜之光利用運算機 。且使用步驟1所 比較，而可檢出照 時之光衰減之量。 光，自被反射構件 受光，卻四次或在 |罩201之部位及 -17- M322699 (14) 形狀，則就所定波長光，可由步驟1之資料與本步驟所 得光資料之差予以算出通過石英罩201時之衰減大小， • 例如通過光檢手段202內側石英罩201時之光衰減量。 又，石英罩201之材質爲均勻時，乃可使用光通過之四 處石英厚度和之値，自石英單位厚度之衰減量算出通過 光檢手段202內側石英罩201時之光衰減量。 在上述步驟，除了該等量之外，亦可算出纖維透過 φ 損失或鏡面體反射損失等之量。 又，在步驟4，係將步驟3所算出之衰減量予以存儲 於未圖示之存儲手段。該存儲手段可爲被內藏於裝置狀 態檢測手段8或控制裝置9者，亦可爲與此另別在裝置 外部設置專用存儲手段加以存儲。 在進行試料處理之前，或在試料處理所用電漿產生 之前，取得以上資訊方開始試料處理。本實施例乃例示 蝕刻處理之情形。在步驟5，即於促使產生電漿以進行蝕 # 刻處理中，將包括自容器1內（石英罩201內）所產生 ^ 電漿之光的容器內之光，由光檢手段202予以受光。在 - 步驟6，則將步驟5所接受容器1內（石英罩201內）之 光傳送至分析裝置403，如上述予以進行分析蝕刻處理中 之容器內產生之光。該分析裝置403係利用運算器405 自被傳送之光的光譜予以算出並檢出光之各頻率強度及 大小等資訊。 在光檢手段202接受之光，卻是受過石英罩201或 其表面附著物等之衰減後才予以接受之光。亦是，由於 -18- M322699 (15) 電漿或反應所產生之生成物促使石英表面被切削等加工 " 、劣化以致散亂或增大透過損失而衰減之後予以接受之 * 光。因此，所算出容器1內產生之光之資訊就有與容器 內實際發生之電漿或反應所起因光譜本身加以分析所得 資訊呈大爲相異之虞。 又，石英罩20 1由於隨著處理之進行被附著電漿或 反應性附著物致被切削而透過率或厚度會變化，故光之 φ 衰減量亦會變化。於是，在步驟7，即使用步驟3、4所 算出光衰減資訊進行調節步驟6所獲之光資訊。例如， 將步驟6所獲光譜之各波長大小與步驟3、4所得相同各 波長之衰減大小以互相對應之各波長予以加算而算出之 。該資料被認爲未受經過石英罩20 1時所產生之衰減影 響之較接近於容器1內所產生光資料之資訊，並用此檢 出容器1內之反應狀態加以判斷。即，藉使用步驟3、4 之資訊，在使用電漿進行處理之裝置，可更精密檢出處 • 理中之反應狀態。 ^ 在步驟8，則利用步驟7所獲光資訊以進行判斷處理 - 裝置之容器4 1內反應狀態。並對應反應狀態予以判斷是 否停止或繼續所進行之處理。當被判斷繼續處理時，例 如步驟7所檢出之特定波長之光譜大小比所定値爲大， 被判斷對應該波長光之特定容器1內之反應繼續進行中 時，乃由控制裝置9向電漿處理裝置發送繼續進行現在 處理之指令加以調節，在退回步驟5。又，被判斷停止處 理時，例如步驟7所檢出之特定波長之光譜大小比所定 -19- M322699 (16) 値爲小時，即被判斷該波長光所對應之特定容器1內之 反應已完成或接近於完成，由控制裝置9向電漿處理裝 ^ 置發送停止現在處理之指令並進至步驟9。步驟9係爲判 斷裝置之處理是否完成或繼續之步驟，當被判斷完成時 即在步驟1 6結束處理。如被判斷繼續處理時，即進至步 驟1 〇，繼續進行相同試料之處理或其他試料之處理。 在步驟1 〇，隨著步驟8進行之處理停止乃檢測容器 內之發光，例如介光檢手段202檢出容器內部之光，以 判斷是否電漿或所產生反應已停止，或已充分變小。此 時，卻需繼續進行檢測至容器內完全無電漿發光，或變 爲可忽視程度之小，並在所檢測發光變小或變無，才予 以判斷爲容器內之反應已停止或充分變小。而判斷反應 停止即移到步驟1 1進行以後之程序。 在步驟1 1，當判斷反應已停止或充分變小，可使用 本實施例之具有觀察窗口 401及反射構件204之補正手 • 段進行檢測光通過石英罩20 1之光衰減量時，則與步驟2 ‘ 同樣自照射手段203向容器1內予以照射由光源402傳 - 送過來之光。所照射之光係穿過石英罩201及其內側之 容器1內部到達反射構件204被反射後，所反射之光即 再通過石英罩201及其內側之容器1內部到達光檢手段 202，介端部石英玻璃304(a)、受光用纖維205被傳送 給分析裝置403。在此，光被分光爲不同波長光，予以算 出預先所決定之波長光譜之量。且與步驟3同樣，參照 步驟1所存儲之資料與步驟1 1之資料進行比較，予以檢 -20- M322699 (17) 出照射於容器1內之光通過石英罩201等時所衰減之光 衰減量。 ^ 如此，在一次蝕刻前後’予以檢出光在經過如石英 罩20 1之容器1內部零件進行傳播時所產生之衰減大小 。將本步驟所檢出之衰減大小資料如同步驟1、4予以存 儲於存儲手段亦可。 然後，在步驟13，利用運算器405由步驟3、4所算 φ 出存儲之衰減大小資料及步驟1 2所算出衰減大小資料予 以算出處理前後之衰減大小變動。並進行衰減大小變動 與所定値之比較，以判斷是否比所定値爲大或小。與所 定値相同或其以下，則退回步驟5進行下述處理。當比 所定値大時，乃予以判斷爲光衰減變大而利用容器1內 部光之處理或反應狀態之檢測誤差變大，或石英罩20 1 表面之附著物量或表面切削量變大。即均予以判斷爲無 法促使裝置適當動作，而移至步驟14進行檢出異常時之 • 裝置運轉程序。有時，移至步驟15,報知發現異常。 ' 以下，使用圖6顯示由分析裝置403所獲容器內部 - 光之光譜分佈。圖6爲顯示由被設置於圖1所示實施例 有關電漿處理裝置之分析裝置403所獲容器內部光之光 譜曲線圖。其中，圖6(a)爲顯示容器內之電漿或反應 所致發光全無或比所定値爲小時，自照射手段203向容 器1內照射所定光而由光檢手段202受光所獲之光譜分 佈。 如上述，自照射手段203向容器1內側照射之光在 -21 - M322699 (18) 反射構件2074被反射，由光檢手段202加以受光。此時 ，被接受之光四次通過石英罩201，或通過石英罩201四 ’ 處而衰減其強度。圖6(a)之曲線圖即顯示通過石英罩 201時之各波長光衰減之大小。亦即，在步驟3或步驟 1 1所獲得之光資料。 圖6(b)爲顯示將使用電漿進行處理時介光檢手段 2 02所獲之光，在分析裝置403予以進行分光所得之光譜 φ 分佈。即，在步驟6所獲之光資料。如上述，自容器1 內到達光檢手段202之光，由於石英罩201之石英或其 表面附著物致會衰減。又，在形成電漿處理中由於電漿 或反應之形成致石英罩201表面會被切削等加工。石英 表面之被切削或表面之附著物乃每次進行處理即變化， 致光通過石英罩201所發生之衰減大小亦每次進行處理 即變化，甚至處理中亦變化。因此，（b )所示光譜分佈 由於是分析該等原因以致衰減之光所檢出者，故其原樣 • 與實際上在容器1內所形成之光譜分佈有不同之虞。 ' 於是，如步驟7所進行，將（b )所得分佈藉利用（a - )所得光衰減大小顯示資料加以補正，則可獲得與容器1 內實際上產生之光相接近之光有關資料。將此予以圖示 即爲圖6 ( c )。藉使用如此資料進行檢測利用電漿之處 理狀態，係可更加提昇狀態檢測精確度進而提昇處理效 率同時，亦可提昇電漿處理之精確度。並藉此可提昇製 造成品率或精確度，進而減低製造成本。 上述實施例，乃就以試料將矽酮或其化合物之半導 -22· M322699 (19) 體使用電漿進行蝕刻時之情形加以說明。在使用電漿進 行其他處理時，例如在進行液晶製造所需母材處理時， 如適用上述實施例說明之構成，亦可達到同樣之作用效 果。 〔新型效果〕 如上述，依據本創作，卻可提供操作容易並可進行 正確處理之電漿處理裝置。 【圖式簡單說明】 [圖1]爲顯示本創作電漿處理裝置有關第一實施例之 構成槪略縱向剖面圖。 [圖2]爲圖1所示實施例之處理容器周圍說明用擴大 圖。 [圖3]爲圖1所示實施例之光檢手段、發光手段、反 # 射構件之詳細構成剖面顯示圖。 ' [圖4]爲含有圖1所示實施例之電漿處理裝置的處理 ' 系統槪略構成顯示圖。 [圖5]爲圖1所示實施例有關電漿處理裝置之含反應 資訊檢測的試料處理順序流程顯示圖。 [圖6]爲顯示由被設置於圖1所示實施例有關電漿處 理裝置之分析裝置所獲容器內部光之光譜曲線圖。 【主要元件符號說明】 -23- M322699 (20) 1 :處理室 2 :氣體供應手段 ^ 3 :氣體排出手段 4 :試料 5 :試料台 6 :電漿形成手段 7 :顯示器 > 8 :狀態檢測手段 9 :控制裝置 100 :處理裝置本體 201 :石英罩 202 :光檢手段 203 :照射手段 204 :反射構件 205 :受光用纖維 > 206 :光導入用纖維 • 3 0 1 :裝設構件 - 3 02 :場通道 3 0 3 : Ο型密封圈 -24-M322699 (1) Nine, new description [New technical field] This is a plasma processing device with a plasma forming mechanism, in particular, it is applicable to semiconductor manufacturing devices and LCD devices suitable for semiconductor device micromachining. A device for processing plasma. [Prior Art] The processing of semiconductor components is being refined every year, and the requirements for the accuracy of the processing dimensions are becoming stricter. On the one hand, in a plasma processing apparatus for processing a semiconductor wafer by physical decomposition using a plasma decomposition processing gas, a buildup reaction product or the like formed inside the apparatus may adhere to the inner wall of the plasma, so that the crystal is often promoted. The processing state of the circle changes substantially. Therefore, as a plurality of wafers are stacked for processing, the input of the device is fixed to the same condition, and the processing shape of the semiconductor element or the like also changes, and there is a problem that production cannot be stably performed. > In order to cope with such a problem, it is usually cleaned by removing the plasma which is attached to the inner wall of the plasma, or by adjusting the temperature of the inner wall of the plasma to prevent the attachment and the object from sticking. Most of this method does not adequately maintain the processing state of the wafer. Therefore, the processing state of the wafer continues to change slowly. The user needs to unload the plasma processing apparatus to replace the parts before the change in the shape of the processing becomes a problem of manufacturing the product, or to wash the liquid or ultrasonic waves. The reason for the change in the state of processing of the wafer is related to the variation of the temperature of the processing system, in addition to the deposition of the internal -5-M322699 (2) film. On the other hand, as described above, the internal processing state of the plasma processing apparatus is detected, and the detection result is taken as a countermeasure such as cleaning, or the detection result is returned to the input of the plasma processing apparatus to keep the processing state constant. A monitoring means for such a change in the plasma treatment is disclosed, for example, in JP-A-110-125660 (Prior Art 1). In this disclosure, • a method of predicting device performance or diagnosing plasma state using a relationship between plasma processing characteristics and device electrical signals is shown. The method discloses a method for extracting an approximation of the relationship between the three electrical signals and the plasma processing characteristics of the device by multiple regression analysis. Yet another example is disclosed in Japanese Patent Publication No. 1 1 - 8 73 2 3 . In the disclosed example, a method of embedding a general detection system equipped with a plurality of existing detectors in a plasma processing apparatus and monitoring the state of the apparatus by detecting a signal related signal is shown. The method of forming the relevant signals reveals the calculation formula of six electrical signals. Yet another example of a disclosure is U.S. Patent No. 5,658,423. In the disclosure, a method of taking in a plurality of signals from a light or mass analyzer to generate a phase signal to monitor the state of the device is shown. The method of forming the correlation signal is used to disclose the method using principal component analysis. [New content] [The new problem to be solved] The method of JP-A-1 0- 1 25660 is the three electrical signals and processing on the chart that will change the input of several of the most processing conditions. M322699 (3) Regression analysis guides, making it difficult to test actual use. However, the processing characteristics of the continuity change condition are not taken into account in the exemplary process except for the repeated process of the established model to become an invalid circle. Therefore, the method of the actual operation number is performed by using the signal related to the self-test signal. The method of taking the relevant signals for the diagnosis is to find a way to correctly monitor the state of the corresponding plasma processing device. The manual No. 5568423 provides a method for principal component analysis to grasp the state of the plasma. However, the effective implementation of the wafer of the disclosed structure under various conditions requires another kind of operation and the relationship of the correct characteristics can be approximated. The number of wafers using multiple processing characteristics is too large. When the 値 is changed, it is extremely difficult to process a large number of times in order to depend on the internal observation of the deposition film as the crystal*. Φ,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,, . In contrast, the U.S. patents are designed to monitor the actual state of the plasma processing apparatus that will be processed by various devices by monitoring the various states of the device. The purpose of this creation is to provide a plasma processing unit for processing. [Means for Solving the Problem] The above object can be carried out by using the plasma generated in the container to perform the test M322699 (4), and the light-transmitting member which is disposed inside the container and loaded with the test material And a light detecting means provided on the inside of the container to receive the light inside the light transmitting member, and having the information detected from the light inside the light transmitting member before processing the sample and in processing the sample The data detected by the light inside the light-transmitting member is achieved by a plasma processing apparatus that detects the function of the above state. Moreover, the light-transmitting member in which the sample is placed inside the container and the light-transmitting member placed on the inside of the container to receive the light can be used by performing the sample processing by using the plasma generated in the container. The optical inspection means for the light inside the member is realized by a plasma processing apparatus that adjusts the function of the operation by using the material detected from the light inside the light-transmitting member before and after the processing of the sample. The sample may be subjected to sample processing by using the plasma generated in the container, and the sample containing the sample 2 in the inside of the container may be placed, and the container may be placed in the container to receive the light in the light transmissive member. The light-detecting means includes the data detected by the light inside the light-transmitting member before the processing of the sample, and the data detected by processing the light from the inside of the light-transmitting member. The @m # 生之功能's plasma processing unit is achieved. By using the plasma generated in the container to carry out the sample, the inside of the container is placed inside the container, and the above-mentioned container is loaded with the above-mentioned container and the stomach member is placed in the container to receive the light.彳生_丨牛@ 侧光的光检测装置, and has the information detected in the treatment of the above-mentioned sample ^ & buckwheat from the light inside the translucent member to adjust the upper _ stomach _ # M322699 (5) The function of the plasma processing device is achieved. Further, it is achieved by irradiating means for irradiating the inside of the light-transmitting member with the predetermined output light, and irradiating the predetermined output light before or after the treatment by the irradiation means. Further, it is achieved that a reflection means for reflecting the irradiation light of the irradiation means to the optical inspection means is provided between the container and the light transmissive member. Further, the above-described irradiation means and the above-described optical inspection means may be provided, and the installation means of the container may be provided together with the irradiation means and the optical inspection means. [Embodiment] Hereinafter, an embodiment of the present creation will be described with reference to the drawings. A first embodiment of the present work is shown in FIG. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic longitudinal sectional view showing the constitution of a first embodiment of the present invention. In the drawing, the main body 100 of the plasma processing apparatus includes a processing chamber (processing container) 1, a gas supply means 2 for supplying a processing gas to the inside thereof, and a gas which can discharge the processing gas and has a function of controlling the internal pressure of the processing chamber 1. Discharge means 3. Further, the processing chamber 1 is provided with a sample stage 5 for supporting the sample 4 to be processed, and a plasma forming means 6 for forming a plasma in the processing chamber 1. In the semiconductor manufacturing apparatus, the sample 4 is a wafer, and in the L CD manufacturing apparatus, the sample 4 is an L CD device. The plasma generating means includes an electromagnetic wave supplying means 10 for supplying electromagnetic waves to the inside of the container 1, an antenna -9 - M322699 (6) 102 for causing an electric field in the container 1, and a magnetron 103 for causing a magnetic field to be generated. Further, the sample stage 5 applies a high-frequency voltage to the power source 104 of the high-frequency voltage ^ so that the reactant generated by the plasma is directed to the sample side. The plasma processing apparatus is provided with a device state detecting means 8. The device-like state detecting means 8 has, for example, a current or voltage detector provided in the plasma forming means 6 for the 'electric path, or a current-voltage phase difference detector, or a pre-wave or reflected wave detector of electric power, or Impedance monitors, etc. Further, the state detecting means 8 has an analyzing means for detecting the light emission of the plasma formed by the plasma forming means 6 in the processing chamber 1 and generating the analysis data. The state detecting means 8 is preferably a detector which can output a majority of signals by a spectroscope capable of outputting a wavelength-decomposed emission spectrum, but it is also possible to remove a single-wavelength detector such as a monochromator. The emission spectrum of the beam splitter output is a majority of the signals with light intensities of the respective wavelengths. The state detecting means 8 may have means other than those described above. For example, it may have a gas flow meter provided in a gas supply means, or a mass spectrometer provided in a processing chamber. And as described below, the state detecting hand 'segment 8 may also have a fluorescent or white light or the like that is induced by the laser from outside to be introduced into the processing chamber to detect the space inside or reflected from the container in which the plasma is generated. The means of changing the state of light. The state detecting means 8 can also be a means for applying an electrical signal from the outside, such as an active detector, to detect its response. The state detecting means outputs a signal of the state of the display device at each predetermined interval or a plurality of sampling times set. Further, the present embodiment has a control device 9 which can receive the output of the above-mentioned state detecting means 8 - M322699 (7) to adjust the operation of the apparatus. The control device adjusts, for example, the power input and the like of the plasma forming means 6 having a magnetron or the like that can generate electricity required to generate plasma. Or other means can be used to adjust the output. For example, the state detecting means 8 can detect the increase or decrease of the amount of the amount, the speed or the plasma strength, etc. in the state of the container, and the plasma is formed by the data detected by the predetermined wavelength of light generated in the plasma. , stop or device start command to regulate the operation of the device. Figure 2 is a weekly view of the processing vessel of the embodiment of Figure 1. As shown in the figure, a quartz cover 20 1 having a member formed of a photosensitive member is disposed inside the processing container (processing chamber) 1, and the quartz cover surrounds the side of the sample stage 5 or the periphery thereof. In this way, the reaction product generated by the formation of a plasma or chemical reaction in the inner space of the quartz cover 20 1 is reduced to the wall surface, or the plasma or the reaction product is thinned. Further, in the present embodiment, the means for irradiating light to the inside of the container 1 on the side of the container 1 thus constituted and the light detecting means for light inside the cover 2 01 of the light-receiving container 1 are used. Further, in the present embodiment, the inner wall surface is provided with a reflecting means for reflecting the light detecting means to the optical detecting means. The photodetecting means 202 is provided on the side wall surface of the side wall device 1 of the container 1 and has a light-receiving quartz cover 20 1 as described later: a magnetic wave or a magnetic field is cut off, or the plasma is generated: The reverse and stop of the finger I indicated that the expansion is performed by the quartz or the like 201, and the inside wall of the inner wall of the inner container 1 can be produced with the inner side (the quartz is more light in the container 1). In addition, the light-receiving portion of the light-receiving portion is transmitted to the light-receiving fiber 205 connected to the light-receiving portion, and is transmitted to the light-receiving fiber. The light in the 205 is supplied to the optical analysis device (described later), and the light in the container is analyzed to detect the information required. Further, the irradiation means 203 is disposed on the side wall of the container 1 as in the optical inspection means. The light from the light source that emits light, which is not shown, is transmitted through the introduction fiber 206, and is supplied to the Φ portion in the container 1 by the irradiation means 203. The container side of the irradiation means 203 has the ability to be described later. The light that will be transmitted The light-irradiating portion to which the quartz cover 20 1 is irradiated on the inner side is disposed. The container 1 is disposed in the acceptable container 1 on the side wall surface opposite to the optical detecting means 202 and the irradiation means 203 ( The light of the quartz cover 201) reflects the desired reflection member 204 toward the optical inspection means 202. The reflection member 204 is processed to suppress the adhesion of the plasma or the reaction product generated by the reaction, or the surface is thinned. It is provided outside the quartz cover 20 1. In the present embodiment, the reflection member 204 is constituted by a mirror surface having a high surface reflectance, but is not limited thereto, and may be selected to satisfy the specifications of the desired function. In addition, the configuration of the optical inspection means 202 can receive the position of the reflected light with sufficient intensity and quantity, and if it is satisfied, it is not limited to the optical inspection means 202 and the illumination means 203 as in the embodiment. The opposite side may be disposed not on the side wall surface in the interior of the quartz cover 20 1 or on the inner side of the container 1. The light received by the optical inspection means 202 is supplied to the light-receiving fiber 205 as described above and supplied to the analysis device. The analyzing device splits the light of the received -12-M322699 (9) by a spectroscopic means capable of dividing the light into wavelengths (wavelengths), so that the spectrum distinguished by the wavelength has a corresponding wave length ( The reaction of the frequency and the formation of the substance, by evaluating the intensity of the spectrum, etc., the state of formation of the reaction or product corresponding thereto, such as the amount or speed of the reaction, etc., for example, the spectral intensity and size of a certain wavelength can be detected. When it is large, it is conceivable that the amount of the reaction or the product corresponding to the wavelength is large. Conversely, when the amount of the spectrum becomes small, it can be judged that the corresponding inverse II strain is small, or the reaction is completed and stopped. In addition, if the state of the plasma or the reaction is detected by measuring the plasma inside the container or the light generated by the reaction, the light measured in the embodiment is transmitted through the quartz cover 201. Its penetration and intensity and amount have been attenuated. Therefore, in order to accurately detect the state of the reaction and the plasma inside the container 1 (quartz cover 201), it is necessary to consider the influence of the light attenuation to perform light analysis. Further, since the quartz cover 201 adheres to the plasma formed by the inside or the product formed by the reaction, or the surface thereof is subjected to processing such as reduction, the light attenuation is also affected. Moreover, when the surface of the inner side wall of the quartz cover 201 is attached with a substance, the amount and intensity of the transmitted light are greatly attenuated due to the adhesion, so that the internal light emission is judged to be weakened without considering such a situation, and it is judged that the reaction has stopped or has been judged. After the end. The creation of the present embodiment is based on the plasma processing apparatus and the processing method, and it is considered to be more excellent in consideration of the influence of the attenuation change of the inside of the container such as the inside of the quartz cover 20 1 when passing through the translucent member. Accuracy is used to evaluate internal responders. -13- M322699 (10) Fig. 3 is a cross-sectional view showing the detailed configuration of the optical inspection means 202, the light-emitting (irradiation) means 203, and the reflection member 204 of the embodiment shown in Fig. 1. 3(a) is a longitudinal sectional view showing the configuration of the reflection member 204, and FIG. 3(b) is a longitudinal sectional view showing the detailed configuration of the optical inspection means 202 and the irradiation means 203. In the present embodiment, as shown in Fig. 3 (b), the photodetecting means 202 and the light-emitting means 203 are disposed close to the side wall of the processing container 1. In particular, the optical inspection means 202 and the irradiation means 203 of the present embodiment are mounted on the same mounting member 301. Further, as described above, the optical detecting means 202 and the illuminating means 203 are attached to the inner wall surface of the container in a substantially parallel optical path, and the light-receiving fibers 205 and the light-introducing fibers 206 are slightly parallel to each other. It is installed in the mounting member 301. In other words, when the mounting member 301 having the optical detecting means 202 and the illuminating means 203 is disposed on the side wall of the container 1, the sealing Ο-type sealing ring 303 for sealing is interposed between the two. It is assumed that the two seals required for the two components of the optical inspection means 202 and the illumination means 203 are carried by a 〇-type seal ring 03. Thereby, the installation of the light inspection and the irradiation means becomes easier, and the processing work at the time of container manufacture can be reduced to reduce the cost of the light-weight device. Further, between the light exiting of the fibers 205 and 206, between the light entrance and the outer surface of the quartz cover 201, a quartz glass such as quartz glass, which is composed of a translucent material, is disposed. The quartz glass 3 04 (a), (b) . The projecting members 3 04 ( a) and ( b) are attached to the mounting member 301 at the ends of the fibers 205 and 206, and are inserted in the state in which the mounting member 310 is mounted in the container 1. In the through hole provided in the side wall member of the container 1, the light transmission-14 - M322699 (11) is sent between the fiber end portion and the quartz cover 201. The ο-type seal ring 03 is also used to seal the through hole. • In the present embodiment, the side wall of the container 1 has an observation window including the fibers 205, 206, the mounting member 301, the field passage 032, and the end quartz glass 304 in units. By installing the observation window of the unit > in the container 1, the manufacturing process such as installation and processing can be simplified to suppress the manufacturing cost. φ Fig. 4 is a schematic view showing the configuration of a processing system including the plasma processing apparatus of the embodiment shown in Fig. 1. In the figure, the light transmitted from the white light source 402 to the introduction fiber 206 through the observation window 401 of the apparatus body 1 is irradiated to the inside of the container 1 by the 206 end portion quartz glass 304 (b). . After the irradiated light passes through the quartz cover 20 1 twice, it is reflected by the reflection member 204 provided on the inner wall surface of the container 1 and faces the optical inspection means 202 of the observation window 401. After the light from the reflection member 204 passes through the quartz cover 201 twice, the quartz glass 304 (a) at the end of the Φ is received by the photodetecting means 202, and is sent to the light receiving fiber 205 to be supplied thereto. 403. The fractionation unit 403 splits the supplied light by the luminescence spectrum meter 404 into a spectrum of each wavelength (frequency). Then, the light that has been split is transmitted to a computer (calculation processor) 405 for calculation to calculate the magnitude or characteristics of the spectral intensity and amount. The calculated light information is stored in a storage means not shown, so that the subsequent device operation can be utilized. In the present embodiment, the analysis device including the luminescence spectrum meter 404 and the calculation processor 405 and the white light source 402 are configured as a part of the same device state detecting means 8 -15 - M322699 (12), but are provided as part of the control device. Alternatively, as described above, the light generated in the container 1 during the sample treatment using the plasma contains the light emission of various chemical reactions or products generated in the plasma. The analyzing device 403 splits the light in the container which is transmitted by the light into light of each wavelength, and measures the intensity to detect the intensity and amount. The light-related data such as the detected spectral intensity of φ are stored and compared with each other. For example, for a particular wavelength spectrum, time series data changes can be used to detect reaction information such as the start, end, or state of the reaction corresponding to the wavelength. In the present embodiment, the analysis device 403 performs the detection of the reaction information, and the light attenuation when the light passes through the translucent member such as the quartz cover 201 and the change in the light attenuation as it is processed by the plasma can suppress the change. The effect of the reaction state in the container, and the detection of the reaction is improved. Hereinafter, the processing procedure of the plasma processing apparatus in the embodiment of Fig. 1 will be described with reference to Fig. 5 . Fig. 5 is a flow chart showing the flow of a sample processing sequence for the reaction information detection of the plasma processing apparatus of the embodiment shown in Fig. 1. In the present embodiment, before and after the arbitrary treatment using the plasma sample, the fixed light is irradiated into the quartz cover 201 in the container 1 from the irradiation means 203, and the detection reaction is performed by the data detected by the irradiation light, or Make processing adjustments. In the figure, step 1 is a step of pre-acquiring the predetermined light information irradiated in the container to -16-M322699 (13). The irradiation light is irradiated with light information such as the amount of irradiation and the intensity of the spot light, and the container is measured by appropriately adjusting the light receiving light, and the light is irradiated with light of a plurality of wavelengths so that the light contains one or two The above is intended to detect _, non-white light does not matter. In step 2, the light transmitted from the fiber 206 by the irradiation means 203 is irradiated onto the container, and the light irradiated through the frame passes through the shaping space through the quartz cover 201. At this time, the treatment is usually not performed, so that plasma is generated. The light that is irradiated into the space inside the container reaches the reflecting member disposed on the inner side wall surface of the container. At least a portion of the reflected light passes through the ΐ space and the quartz cover 201 again, and reaches the light received by the optical inspection means, but the fiber 205 is transmitted to the beginning to be split into various optical wavelengths (spectrums). * In step 3, the light data obtained by calculating the spectral intensity or size of each wavelength is calculated as the light-405, and the light incident on the container 1 passes through the quartz cover 201 or the like, for example, in the present embodiment. The 204 irradiated in the container 1 is reflected to reach the photodetecting means 202 and passed through the quartz cover 201 at four places. If you know that the irradiated light passes through the stone before storing the waves, you can use the internal light information. In this embodiment, white light is used, but the light source of the light is irradiated, and the light source 402 is introduced into the light source 1. As described above, the space inside the container in the container in the cover 201 is not reflected by the quartz cover 201 204. The inner cover 201 and the inner portion 202 of the container are received. Thousand devices 403, and the light in this spectrum utilizes a computing machine. And using the comparison in step 1, the amount of light attenuation in the illuminating time can be detected. The light, which is received by the reflective member four times or in the shape of the cover 201 and the shape of the -17-M322699 (14), can be calculated by the difference between the data of the step 1 and the optical data obtained in this step. The attenuation of the quartz cover 201, for example, the amount of light attenuation when passing through the quartz cover 201 inside the optical inspection means 202. Further, when the material of the quartz cover 201 is uniform, the amount of light attenuation when passing through the quartz cover 201 inside the photodetecting means 202 can be calculated from the attenuation amount of the unit thickness of the quartz using the thickness of the quartz which passes through the light. In the above steps, in addition to the equivalent amounts, the amount of fiber transmission φ loss or specular body reflection loss or the like can be calculated. Further, in step 4, the amount of attenuation calculated in step 3 is stored in a storage means (not shown). The storage means may be built in the device state detecting means 8 or the control means 9, or may be stored separately by providing a dedicated storage means outside the apparatus. Before the sample processing, or before the plasma used in the sample processing, the above information is obtained and the sample processing is started. This embodiment is illustrative of the case of etching treatment. In step 5, that is, in the process of causing the generation of plasma for the etching process, the light in the container including the light generated by the plasma generated in the inside of the container 1 (within the quartz cover 201) is received by the photodetecting means 202. . In the step - 6, the light in the container 1 (in the quartz cover 201) received in the step 5 is sent to the analyzing device 403, and the light generated in the container in the analysis etching process is analyzed as described above. The analysis device 403 calculates and analyzes the intensity and magnitude of each frequency of light from the spectrum of the transmitted light by the arithmetic unit 405. The light received by the photodetecting means 202 is light which is received after being attenuated by the quartz cover 201 or its surface attachments. Also, because -18- M322699 (15) the product produced by the plasma or the reaction causes the quartz surface to be processed by machining, etc., and is deteriorated to cause scattering or increase the transmission loss and then attenuate it. Therefore, the information of the light generated in the container 1 is substantially different from the information obtained by analyzing the spectrum of the plasma or the reaction itself. Further, since the quartz cover 20 1 is cut by the adhesion of the plasma or the reactive deposit as the process progresses, the transmittance or thickness changes, and the amount of attenuation of the light φ also changes. Then, in step 7, the light information obtained in step 6 is adjusted using the light attenuation information calculated in steps 3 and 4. For example, the magnitude of each wavelength of the spectrum obtained in step 6 and the attenuation of the same wavelength obtained in steps 3 and 4 are calculated by adding the respective wavelengths corresponding to each other. The data is considered to be unaffected by the attenuation generated by the quartz cover 20 1 and is closer to the information of the light data generated in the container 1, and is judged by the reaction state in the detection container 1. That is, by using the information of steps 3 and 4, the apparatus for processing using plasma can more accurately detect the reaction state in the treatment. ^ In step 8, the light information obtained in step 7 is used to perform the judgment process - the reaction state in the container 4 1 of the device. Corresponding to the reaction state, it is judged whether to stop or continue the processing performed. When it is judged that the processing is continued, for example, the spectral size of the specific wavelength detected in step 7 is larger than the predetermined value, and it is judged that the reaction in the specific container 1 corresponding to the wavelength light continues, the control device 9 is turned on. The slurry processing device transmits an instruction to continue the current processing and adjusts it, and returns to step 5. Moreover, when it is judged that the processing is stopped, for example, the spectral size of the specific wavelength detected in step 7 is smaller than the predetermined -19-M322699 (16) 値, that is, the reaction in the specific container 1 corresponding to the wavelength light is judged to be completed. Or, near completion, the control device 9 sends an instruction to stop the current processing to the plasma processing apparatus and proceeds to step 9. Step 9 is a step of judging whether the processing of the apparatus is completed or continued, and when it is judged to be completed, the processing is ended in step 16. If it is judged to continue processing, proceed to step 1 and continue processing the same sample or other samples. In step 1 , the processing in step 8 is stopped to detect the light emission in the container. For example, the optical inspection means 202 detects the light inside the container to determine whether the plasma or the reaction has stopped, or has become sufficiently small. . At this time, it is necessary to continue to detect that there is no plasma luminescence in the container, or it becomes negligible, and it is judged that the reaction in the container has stopped or is sufficiently small when the detected luminescence becomes small or no. . When it is judged that the reaction is stopped, the process proceeds to step 1 1 and thereafter. In step 1 1, when it is judged that the reaction has stopped or is sufficiently reduced, the light attenuation amount of the detection light passing through the quartz cover 20 1 can be detected by using the correction hand segment of the observation window 401 and the reflection member 204 of the present embodiment. Step 2' Similarly, the light from the light source 402 is irradiated to the inside of the container 1 by the irradiation means 203. The irradiated light passes through the inside of the quartz cover 201 and the inside of the container 1 to the reflective member 204, and the reflected light passes through the quartz cover 201 and the inside of the container 1 inside to reach the optical detecting means 202. The quartz glass 304 (a) and the light-receiving fiber 205 are sent to the analyzer 403. Here, the light is split into light of different wavelengths, and the amount of the wavelength spectrum determined in advance is calculated. And in the same manner as in step 3, referring to the data stored in step 1 and comparing the data of step 1 1 to detect -20- M322699 (17) the light attenuation attenuated when the light irradiated in the container 1 passes through the quartz cover 201 or the like. Decrease. ^ Thus, the amount of attenuation generated when light is propagated through the internal parts of the container 1 such as the quartz cover 20 1 is detected before and after one etching. The attenuation size data detected in this step may be stored in the storage means as in steps 1 and 4. Then, in step 13, the arithmetic unit 405 calculates the attenuation size data calculated by the steps φ and 4 and the attenuation size data calculated in the step 12 to calculate the attenuation magnitude change before and after the processing. And compare the attenuation size change with the determined 値 to determine whether it is larger or smaller than the specified 値. If it is the same as or below the specified enthalpy, the process returns to step 5 to perform the following processing. When the ratio is larger than the predetermined value, it is judged that the light attenuation is increased, and the detection error of the processing or the reaction state of the light inside the container 1 is increased, or the amount of attached matter or the surface cutting amount on the surface of the quartz cover 20 1 is increased. In other words, it is judged that the device is not allowed to operate properly, and the process proceeds to step 14 to detect the device operation program when the abnormality is detected. Sometimes, go to step 15 and notice that an abnormality has been found. In the following, the spectral distribution of the inside of the container obtained by the analyzing device 403 is shown using Fig. 6. Fig. 6 is a graph showing the spectrum of light inside the container obtained by the analyzing device 403 provided in the plasma processing apparatus of the embodiment shown in Fig. 1. 6(a) is a spectrum obtained by the photodetecting means 202 receiving light when the plasma in the container or the reaction-induced luminescence is absent or less than the predetermined enthalpy, and the predetermined light is irradiated from the irradiation means 203 into the container 1. distributed. As described above, the light irradiated from the inside of the container 1 by the irradiation means 203 is reflected by the -21 - M322699 (18) reflection member 2074, and is received by the photodetecting means 202. At this time, the received light passes through the quartz cover 201 four times or through the quartz cover 201 to attenuate its intensity. The graph of Fig. 6(a) shows the magnitude of light attenuation at each wavelength when passing through the quartz cover 201. That is, the optical data obtained in step 3 or step 1 1. Fig. 6(b) is a view showing the spectrum φ distribution obtained by the light of the optical inspection means 022 when the plasma is processed by the analyzer 403. That is, the light data obtained in step 6. As described above, the light reaching the photodetecting means 202 from the inside of the container 1 is attenuated by the quartz of the quartz cover 201 or its surface attachment. Further, in the plasma treatment, the surface of the quartz cover 201 is processed by cutting or the like due to the formation of plasma or reaction. The surface to be cut or the surface of the quartz is changed every time it is processed, and the amount of attenuation caused by the light passing through the quartz cover 201 is also changed every time it is processed, and even changes during processing. Therefore, the spectral distribution shown in (b) is detected by the analysis of the causes of the attenuated light, so that it is different from the spectral distribution actually formed in the container 1. Then, as performed in step 7, the distribution obtained in (b) is corrected by using the light attenuation size display data obtained by (a - ), and light-related data which is close to the light actually generated in the container 1 can be obtained. This is illustrated in Figure 6 (c). By using such data for the detection of the state of the plasma, the state detection accuracy can be further improved to improve the processing efficiency, and the accuracy of the plasma processing can be improved. This can increase the yield or accuracy of the system, thereby reducing manufacturing costs. In the above embodiment, the case where the fluorenone or its compound semiconductor -22· M322699 (19) is etched using a plasma is described. When other treatments using plasma are carried out, for example, when the base material treatment required for liquid crystal production is carried out, the same effects can be attained by applying the constitution described in the above embodiments. [New effect] As described above, according to the present invention, a plasma processing apparatus which is easy to handle and can be handled correctly can be provided. BRIEF DESCRIPTION OF THE DRAWINGS [Fig. 1] is a schematic longitudinal cross-sectional view showing a configuration of a first embodiment of the present plasma processing apparatus. Fig. 2 is an enlarged view for explaining the periphery of a processing container of the embodiment shown in Fig. 1. Fig. 3 is a cross-sectional view showing a detailed configuration of a photodetecting means, a light emitting means, and a reflecting member of the embodiment shown in Fig. 1. Fig. 4 is a schematic diagram showing the configuration of the process of the plasma processing apparatus of the embodiment shown in Fig. 1. Fig. 5 is a flow chart showing the flow of a sample processing sequence for the reaction information detection of the plasma processing apparatus of the embodiment shown in Fig. 1. Fig. 6 is a graph showing the spectrum of light inside the container obtained by the analyzing device provided in the plasma processing apparatus of the embodiment shown in Fig. 1. [Description of main component symbols] -23- M322699 (20) 1 : Processing chamber 2 : Gas supply means ^ 3 : Gas discharge means 4 : Sample 5 : Sample stage 6 : Plasma formation means 7 : Display > 8 : Status detection Means 9 : Control device 100 : Processing device main body 201 : Quartz cover 202 : Photodetection means 203 : Irradiation means 204 : Reflecting member 205 : Light-receiving fiber > 206 : Light-introducing fiber • 3 0 1 : Mounting member - 3 02 : Field channel 3 0 3 : 密封-ring-24-