M318805 八、新型說明： 【新型所屬之技術領域】 本新型是有關於一種發光二極體，且特別是有關於— 種側射型的熱電分離發光二極體。 【先前技術】 目前中小尺寸面板的背光源如手機、PDA及汽車衛星 導航系統等，白光led已逐漸取代冷陰極燈管（CCFI^， 成為中小尺寸面板的主要背光源。其中以側面發光leD作 為背光源可大幅縮小背光模組的厚度，達到產品薄型化的 要求。 散熱問題是LED背光源的重要技術瓶頸。針對中大尺 寸的LED背光模組，當累積的熱能隨時間增加時，會伴隨 著波長的變化與亮度的衰減，因此必須讓LED有最佳的散 熱性’才能保持LED的亮度並延長LED的使用壽命。 傳、、充側發光式LED係採用導線架（Leadframe)散熱封 裝方式，藉由導線架於晶片工作的同時將熱量散出。然 而’隨著LED需求功率越來越高，單純只靠導線架散熱的 方式已經不能符合產品的需求，為達到良好的散熱效果現 有技術為不斷增加LED結構體積，但反而造成LED在空 間應用上的限制。 【新型内容】 因此本新型就是在提供一種側射型發光二極體，用以 M318805 改善傳統側射型發光二極體利用導線架散熱之封裝方式 散熱性不佳的問題。 根據本新型之一種適用於側發光式之發光二極體，包 含一主基座、一反射座、一散熱基板及複數個金屬電極。 散熱基板具有一卡合於主基座之結合面、一相對於結合面 之固晶面及一設於主基座外之外表面。反射座設於散熱基 板之固晶面，並具有一内部空間。金屬電極設於主基座， 其中各金屬電極一端延伸入内部空間，另端延伸凸出反射 座之外，用以與導線架連接以導入電能。至少一發光晶片 设置於内部空間中並固定於固晶面上，利用金屬線電性連 接金屬電極與發光晶片。 根據上述可知，本新型之發光二極體將發光晶片固定 於一外部裸露之散熱基板上，將導線架與散熱基板分別獨 立出來，使輸入電能路徑與晶片工作時散熱路徑分開，可 藉由政熱基板將熱能散出，而不需利用導線架散熱，更容 易控制熱電的平衡點，達到熱電分離、避免熱循環影響發 光晶片的效果。 【實施方式】 睛參照第1圖及第2圖，其繪示依照本新型一實施例 的一種側射型發光二極體剖面圖及俯視圖。發光二極體 100包含主基座110、反射座112、散熱基板12()、發光晶 片130、金屬電極140及金屬線142。 散熱基板120具有一卡合於主基座11〇之結合面 M318805 12卜一相對於結合面之固晶面122及一位於該主基座110 外之外表面123。結合面122卡合於主基座110,且外表面 123露出於該主基座110之外。依照本新型之實施例，更 包含一金或銀鍍層披覆於散熱基板之固晶面122上，藉以 增加光的反射效率。 依照本新型之實施例，散熱基板120為一導熱性佳之 板體，可為金屬所構成之板體，例如銀、銅、銅合金、銅 銀合金、鋁或鋁合金；或為陶瓷所構成之板體，例如氧化 鋁或氮化鋁；亦可為高分子混合物所構成之板體。 反射座112設於散熱基板120之固晶面，並具有一内 部空間，内部空間之内壁傾斜且朝開口擴大，可藉由傾斜 之内壁反射光線。依照本新型之實施例，更包含一反射鍍 層彼覆於該反射座上，例如金或銀鍍層；反射座可為金屬 所構成之座體，例如銀、銅、銅合金、銅銀合金、銘或銘 合金。反射座亦可為非金屬所構成之座體，例如陶瓷、氧 化銘、氮化銘或高分子混合物。 複數個金屬電極140設於主基座110,每一金屬電極 140之一端延伸入内部空間，另端延伸凸出於反射座112 之外，用以與外部之一導線架連接以導入電能。依照本新 型之實施例，金屬電極可為銀、銅、鋁、銅合金、銅銀合 金或鋁合金構成之片體。 至少一發光晶片130位於内部空間中，並固定於固晶 面122上，利用金屬線142電性連接金屬電極140與發光 晶片130之間，於電能輸入時發出特定波長的光線。依照 M318805 本新型之實施例，散熱基板120 曰K J固疋一個以上之發光 曰二厘，母一發光…30搭配-對金屬電極，利 用金屬線連接輸人電能以使晶片發出特定波長之光線。 由上述本新型之實施例可知，本新型之發光二極體將 發光晶片ϋ定於—外㈣露之散熱基板，料線架與散熱 基板分別獨立出來，使輸人電能路徑與晶片卫作時散熱路 ，分開’可藉由散熱基板將熱能散出，而不需利用導線架 散熱，更容易控制熱電的平衡點，❹i熱電分離以避免熱 循環影響發光晶片的效果。 雖然本新型已以一較佳實施例揭露如上，然其並非用 以限定本新型，任何熟習此技藝者，在不脫離本新型之精 神和範圍内，當可作各種之更動與潤飾，因此本新型之保 護範圍當視後附之申請專利範圍所界定者為準。 【圖式簡單說明】 為讓本新型之上述和其他目的、特徵、優點與實施例 能更明顯易懂，所附圖式之詳細說明如下： 第1圖是本新型一實施例的一種側射型發光二極體剖 面圖。 第2圖係繪示依照本新型一實施例的一種側射型發光 二極體俯視圖。 【主要元件符號說明】 M318805 100 ： 發光二極體 110 ： 112 ： 反射座 120 ： 121 ： 結合面 122 ： 123 ： 外表面 130 ： 140 ： 金屬電極 142 ： 主基座 散熱基板 固晶面 發光晶片 金屬線M318805 VIII. New Description: [New Technology Field] The present invention relates to a light-emitting diode, and in particular to a side-emitting type thermoelectric separation light-emitting diode. [Prior Art] At present, backlights for small and medium-sized panels such as mobile phones, PDAs, and car satellite navigation systems have gradually replaced cold cathode lamps (CCFI^, which are the main backlights for small and medium-sized panels. The backlight can greatly reduce the thickness of the backlight module to meet the requirements of thin product. The heat dissipation problem is an important technical bottleneck of the LED backlight. For the medium and large size LED backlight module, when the accumulated thermal energy increases with time, it will accompany The change of wavelength and the attenuation of brightness, so the LED must have the best heat dissipation' to maintain the brightness of the LED and extend the service life of the LED. The LEDs of the transmission and the side-emitting LEDs are cooled by the lead frame. The heat is dissipated while the lead frame is working on the wafer. However, as the power demand of the LED is higher and higher, the heat dissipation by the lead frame alone cannot meet the requirements of the product, and the prior art is achieved in order to achieve good heat dissipation. In order to continuously increase the size of the LED structure, but it causes the limitation of the LED in space applications. [New content] Therefore The new type is to provide a side-emitting type light-emitting diode for the M318805 to improve the heat dissipation of the conventional side-emitting type light-emitting diode using the heat dissipation of the lead frame. The one according to the novel is suitable for the side-emitting type. The light emitting diode comprises a main base, a reflecting base, a heat dissipating substrate and a plurality of metal electrodes. The heat dissipating substrate has a bonding surface engaged with the main base, a solid crystal surface opposite to the bonding surface, and a setting The outer surface of the main base is disposed outside the main base. The reflective seat is disposed on the solid crystal surface of the heat dissipation substrate and has an inner space. The metal electrode is disposed on the main base, wherein one end of each metal electrode extends into the inner space, and the other end extends and reflects In addition to the socket, the lead frame is connected to the lead frame for introducing electric energy. At least one light-emitting chip is disposed in the inner space and fixed on the solid crystal surface, and electrically connects the metal electrode and the light-emitting chip with the metal wire. According to the above, the present invention The light-emitting diode fixes the light-emitting chip on an external exposed heat-dissipating substrate, separates the lead frame and the heat-dissipating substrate, and makes the input power path and the wafer worker When the heat dissipation path is separated, the heat energy can be dissipated by the political heat substrate without using the lead frame to dissipate heat, and it is easier to control the thermoelectric balance point, thereby achieving the effect of thermoelectric separation and avoiding thermal cycle affecting the light-emitting chip. 1 and 2 are a cross-sectional view and a plan view of a side-emitting LED according to an embodiment of the invention. The LED 100 includes a main pedestal 110, a reflector 112, and a heat dissipation substrate 12. (), the light-emitting chip 130, the metal electrode 140 and the metal wire 142. The heat-dissipating substrate 120 has a bonding surface M318805 12 that is engaged with the main base 11b, a solid crystal surface 122 with respect to the bonding surface, and a main substrate The outer surface 123 of the seat 110. The joint surface 122 is engaged with the main base 110, and the outer surface 123 is exposed outside the main base 110. According to an embodiment of the present invention, a gold or silver plating layer is further coated on the solid crystal surface 122 of the heat dissipation substrate to increase the light reflection efficiency. According to an embodiment of the present invention, the heat dissipation substrate 120 is a plate body with good thermal conductivity, and may be a plate body made of metal, such as silver, copper, copper alloy, copper silver alloy, aluminum or aluminum alloy; or ceramic. The plate body, such as alumina or aluminum nitride, may also be a plate body composed of a polymer mixture. The reflection seat 112 is disposed on the solid crystal surface of the heat dissipation substrate 120 and has an inner space. The inner wall of the inner space is inclined and enlarged toward the opening, and the light can be reflected by the inclined inner wall. According to an embodiment of the present invention, a reflective coating is further disposed on the reflective seat, such as a gold or silver plating layer; the reflective seat may be a metal body, such as silver, copper, copper alloy, copper silver alloy, and Or Ming alloy. The reflector can also be a non-metallic body such as ceramic, oxidized, nitrided or polymer blended. A plurality of metal electrodes 140 are disposed on the main base 110. One end of each of the metal electrodes 140 extends into the internal space, and the other end extends beyond the reflective seat 112 for connection with an external lead frame for introducing electrical energy. According to an embodiment of the present invention, the metal electrode may be a sheet of silver, copper, aluminum, copper alloy, copper-silver alloy or aluminum alloy. At least one of the illuminating wafers 130 is located in the internal space and is fixed on the solid crystal surface 122. The metal wires 142 are electrically connected between the metal electrodes 140 and the illuminating wafer 130 to emit light of a specific wavelength upon input of electric energy. According to the embodiment of the present invention, the heat dissipating substrate 120 曰K J has more than one illuminating 曰 厘, the mother illuminating ... 30 collocation-to-metal electrode, and the metal wire is used to connect the input electric energy to make the wafer emit light of a specific wavelength. According to the embodiment of the present invention, the light-emitting diode of the present invention fixes the light-emitting chip on the heat-dissipating substrate of the outer (four) exposed, and the material wire frame and the heat-dissipating substrate are separately separated, so that the input power path and the wafer are made. The heat dissipation path can be separated by the heat dissipation substrate, without using the lead frame to dissipate heat, and it is easier to control the thermoelectric balance point, and the thermoelectric separation can avoid the effect of thermal cycling on the light-emitting chip. Although the present invention has been described above in terms of a preferred embodiment, it is not intended to limit the present invention, and it is to be understood that those skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention. The scope of the new protection is subject to the definition of the scope of the patent application. BRIEF DESCRIPTION OF THE DRAWINGS In order to make the above and other objects, features, advantages and embodiments of the present invention more obvious, the detailed description of the drawings is as follows: FIG. 1 is a side shot of an embodiment of the present invention. A cross-sectional view of a light-emitting diode. Fig. 2 is a plan view showing a side-emitting type light-emitting diode according to an embodiment of the present invention. [Main component symbol description] M318805 100 : Light-emitting diode 110 : 112 : Reflector 120 : 121 : Bonding surface 122 : 123 : Outer surface 130 : 140 : Metal electrode 142 : Main base heat sink substrate Solid crystal surface light emitting wafer metal line