M304866 八、新型說明： 【新型所屬之技術領域】 • 本創作係關於一種矽晶電容式麥克風，尤指一種利用 ， 微結構設計來降低振動膜應力，以提高矽晶電容式麥克風 對聲音的靈敏度與不受迴焊過程影響靈敏度者。 【先前技術】 因電子產品朝輕薄短小的方向發展，如何縮小麥克風 • 尺寸成為重要課題。早期所使用振動膜材料為聚酯聚合物 (Mylar)，但因材質應力過高，造成聲音靈敏度低，因1， 相關業者便發展利用半導體製程與矽微細加工技術所製 . 作的矽晶電容式麥克風。 、 而此種利用半導體製程與矽微細加工技術所製作的 石夕晶電容式麥克風’則是以石夕或發的化合物當作振動膜材 料，其主要原因是有較低的固有内應力（Intrinsic Stress)，可提高麥克風靈敏度。 • 請參閱第一圖，為美國第5,888,845號專利案之主要 代表圖，該專利揭露一種單晶片矽晶電容式麥克風，其主 要包含一平坦振動膜（Diaphragm)1〇〇，以及一背板 (Backplate)llO。振動膜1〇〇為單晶矽材質，平整振動膜 100結構邊界為四翻定，侧其結構有較高的内應力，、 麥克風藍破度受製程變異的影響較大。 請茶m圖’為美國第5,87()，482號專利案之主要 &表圖’該專利揭露_種單晶料晶電容式麥克風，其主 6 M304866 要包含一振動膜l〇〇a、一皺摺結構102、一邊界條件固定 端103以及一邊界條件自由端103a。此單晶片砍晶電容式 麥克風，利用半導體製程與矽微細加工而成，振動膜l〇〇a 為皺摺（Corrugated)之結構，藉由振動膜l〇〇a邊界條件的 改變，使振動膜100a應力降低，以提高靈敏度，但此種懸 臂樑（Cantilever)設計，麥克風之實際可變電容60的面積 較小，故產生的訊號較小，且此設計的自然共振頻率較 低，但是振動膜100a的自然共振頻率必須大於麥克風所需 ϋ 的聲音頻率，故有設計不易的缺點。 請參閱第三圖，為美國第6,535, 460號專利案之主要 代表圖，該專利揭露一種單晶片矽晶電容式麥克風，其主 要包含一振動膜112、一有孔洞背板140以及一石夕基材 (Silicon Substrate) 130，振動膜 112與背板140間具有一 空氣間隙120。此單晶片矽晶電容式麥克風，藉由平面式 的彎曲形狀來達到高撓曲性彈簧（High Compl iance Spring)結構設計來達到侧向（Latera 1)可自由移動的振 φ 動膜（Freely Moveable Diaphragm)，以提高撓曲性與靈 敏度，但此平面式彈簧支撐結構需要較大的面積，使麥克 風面積較大。 請參閱第四圖，2004年W· J· Wang等人（如附件一， W· J· Wang, R.M· Lin, Q· B· Zou，and X. X· Li， “Modeling and characterization of a silicon condenser microphone," J. Micromech. Microeng., v〇l, 14，pp· 403-409，2004)，發表一種單面深皺摺振動膜 7 M304866 (Single Deeply Corrugated Diaphragm)的結構，此振動 膜為多晶矽材料。其主要包含一振動膜忉牝、一皺摺結構 l〇2a、一背板ii〇a以及複數銲墊（B〇nding Pad)lii。文中 所提到皺摺愈深靈敏度愈高，但製程門檻較高。 因此，本創作想排除或至少減輕先前技術所遭遇的問 題。 【新型内容】 本創作之主要目的，係利用結構設計來達到降低振動 臈之内應力，得到較好的靈敏度。 本創作之另一目的，係利用結構設計來達到麥克風相 對不受迴焊過程而改變靈敏度。 本創作係利用一支樓結構（SUpp〇rt Structure)用來 =離一振動膜與一背板，支撐結構可決定振動膜感應聲壓 變化的有效面積，此支撐結構可以為一個環狀結構(Ring) 或者為數個小凸塊圍成環狀。背板上另設有一防黏著結 構應用於濕钮刻空氣間隙過程中，可減少背板與振動膜 接觸的面積，可防止製造過程中背板與振動膜的黏著，於 “、、飿刻後可輕易分離背板與振動膜，提高製程良率 Qield)，振動膜周緣設有一懸浮皺摺結構，利用懸浮立 體U敵摺結構來支撐振動膜，實現高靈敏度之矽晶電容式 麥克風，且此設計的麥克風靈敏度受薄膜製程影響較小。 振動膜完全由懸浮皺摺結構來支撐，此懸浮皺摺結構 可限制振動膜侧向移動，卻可提供垂直於振動膜方向的移 M304866 特殊之鳩釋放應力，以提高麥克風靈敏 度以及姆不”_麵改變$敏度。 八的叙點和本創作的新穎特性將從以下詳細的 描述與相關的附圖更加顯明。 【實施方式】M304866 VIII. New Description: [New Technology Field] • This creation is about a twin crystal condenser microphone, especially a micro-structural design to reduce the vibration film stress to improve the sensitivity of the twin crystal condenser microphone. Those who are not affected by the reflow process are sensitive. [Prior Art] How to reduce the size of the microphone due to the development of electronic products in the direction of lightness and thinness • Size has become an important issue. The vibrating membrane material used in the early days was a polyester polymer (Mylar). However, due to the excessive stress of the material, the sound sensitivity was low. 1. The related industry developed a crystal capacitor made by the semiconductor process and the micro-machining technology. Microphone. The Shishijing condenser microphone made by using the semiconductor process and the micro-machining technology is based on the compound of Shi Xi or hair as the diaphragm material. The main reason is that there is a low inherent internal stress (Intrinsic Stress) to increase microphone sensitivity. • See the first figure, which is the main representative of U.S. Patent No. 5,888,845, which discloses a single-wafer twinned condenser microphone, which mainly comprises a flat diaphragm (Diaphragm), and a back plate ( Backplate)llO. The vibrating membrane 1〇〇 is a single crystal crucible material, and the structural boundary of the flat vibrating membrane 100 is four-folded, and the structure of the side has a high internal stress, and the blue-brokenness of the microphone is greatly affected by the variation of the process. Please ask the tea m picture 'for the US's 5,87 (), 482 patent case's main & map's patent disclosure of a single crystal material crystal condenser microphone, the main 6 M304866 to contain a diaphragm l〇〇 a, a wrinkle structure 102, a boundary condition fixed end 103, and a boundary condition free end 103a. The single-chip chip-cutting condenser microphone is formed by a semiconductor process and a micro-machining process, and the diaphragm l〇〇a is a corrugated structure, and the diaphragm is changed by the boundary condition of the diaphragm l〇〇a. 100a stress is reduced to improve sensitivity, but this cantilever design, the actual variable capacitance 60 of the microphone has a small area, so the generated signal is small, and the natural resonance frequency of the design is low, but the diaphragm The natural resonant frequency of 100a must be greater than the sound frequency required by the microphone, so there is a disadvantage that the design is not easy. Please refer to the third figure, which is a main representative diagram of U.S. Patent No. 6,535,460, which discloses a single-wafer twin crystal condenser microphone, which mainly comprises a vibrating film 112, a perforated back plate 140 and a stone base. Silicon Substrate 130 has an air gap 120 between the diaphragm 112 and the back plate 140. This single-wafer twin-crystal condenser microphone achieves high-flexibility spring (High Complise Spring) structure design by planar curved shape to achieve lateral (Latera 1) freely movable vibration diaphragm (Freely Moveable) Diaphragm) to improve flexibility and sensitivity, but this planar spring support structure requires a large area to make the microphone area larger. Please refer to the fourth picture, 2004 W·J· Wang et al. (eg Annex I, W·J· Wang, RM·Lin, Q·B·Zou, and X. X. Li, “Modeling and characterization of a silicon Condenser microphone, " J. Micromech. Microeng., v〇l, 14, pp. 403-409, 2004), published a structure of a single-sided deep wrinkle diaphragm 7 M304866 (Single Deeply Corrugated Diaphragm), this diaphragm It is a polycrystalline germanium material, which mainly comprises a vibrating membrane crucible, a corrugated structure l〇2a, a backing plate ii〇a, and a plurality of bonding pads (B〇nding Pad) lii. The deeper the wrinkles are, the higher the sensitivity is. However, the process threshold is higher. Therefore, this creation wants to eliminate or at least alleviate the problems encountered in the prior art. [New content] The main purpose of this creation is to use structural design to reduce the internal stress of the vibration , and get better. Sensitivity. Another purpose of this creation is to use structural design to achieve sensitivity changes in the microphone relative to the reflow process. This creation uses a SUPP〇rt Structure to separate from a diaphragm and a back. Board, support knot The structure can determine the effective area of the diaphragm to induce the change of sound pressure. The support structure can be a ring structure (Ring) or a plurality of small bumps to form a ring shape. The back plate is further provided with an anti-adhesive structure for wet button engraving. During the air gap process, the area of the back plate contacting the diaphragm can be reduced, and the adhesion between the back plate and the diaphragm can be prevented during the manufacturing process, and the back plate and the diaphragm can be easily separated after the engraving, thereby improving the process yield Qield. The periphery of the vibrating membrane is provided with a suspended wrinkle structure, and the vibrating membrane is supported by the suspended solid U-enantibody structure to realize a high-sensitivity twin crystal condenser microphone, and the microphone sensitivity of the design is less affected by the thin film process. The vibrating membrane is completely supported by the suspended corrugated structure, which can limit the lateral movement of the vibrating membrane, but can provide a vertical displacement of the M304866 perpendicular to the direction of the vibrating membrane to improve the sensitivity of the microphone and the The surface changes the sensitivity. The novelty of the eight and the novel features of the present creation will be more apparent from the following detailed description and related drawings.
有關本創作所採用之技術、手段及其功效，兹舉一較 L貫施例並配合圖式詳述如後，此僅供說明之用，在專利 申請上並不受此種結構之限制。 请參閱第五圖，本創作較佳實施例之石夕晶電容式麥克 風為-電容結構，主要包含_石夕基材卜一振動膜2、一背 板4、一上電極41以及一保護層42。 石夕基材1 s曼有一空氣腔（Air chamber)5，並結合有該 振動膜2、該背板4以及該保護層42。該背板4具有一支 撐結構（Support Structure)31以及一防黏著結構45，支 撐結構31與上電極41係設於背板4鄰近矽基材丨的一 側。防黏著結構45係可為凹陷（indentations)之結構， 如由介電材質構成的複數凸出部，可防止製造過程中背板 4與振動膜2的黏著 背板4上設有複數音孔43與餘刻孔43a，聲壓可經由 音孔43進入麥克風，蝕刻孔43a係用於蝕刻内層。 振動膜2係藉由一皺摺懸浮結構21懸浮於;ε夕基材丄 與背板4間，並且為多晶石夕材料構成，皺摺懸浮結構21 係為懸浮立體微皺摺之結構。藉此，上電極41與振動膜2 9 M3 04866 . 形成一個電容。聲音經由背板4的音孔43到達為下電極 之振動膜2 ’振動膜2隨著音覆的變化而變形，造成電容 . 值變化。 _ 本創作較佳實施例之結構層係可利用低壓化學氣相 r^^CLow Pressure Chemical Vapor Deposition, LPCVD) 沉積多晶石夕（P〇1ySilicon)，並且利用離子佈植技術將棚 或_子佈植於此多㈣上，再利用回火（Anneaiing)技 術，使此多晶石夕振動膜2成為一低應力薄膜。此結構包含 • 脑膜結構2,利用支撐結構31設計決定振動膜2感應聲 壓變化的有效面積，以及敏擅懸浮結構21支撐振動膜2， 使振動膜2為-懸浮之結構，皺摺懸浮結構21為一立體 . 彳變形皺摺之結構’支撐結構31可拘束平面的侧向 (Lateral)移動，但是垂直於振動膜2方向有較大的變形， 可降低振動膜2應力與提高麥克風靈敏度。 防黏著結構45之凹陷結構是先在上電極41往下餘刻 錄個㈣，再域護層42覆蓋，即可形成背板4的凹 _ 陷結構與背板4。背板4上的許多凹陷結構（趾耐咖） ''«用U刻1氣間隙3過程中，可減少背板4與振動膜 2接觸的面積’於刻後可輕易分離背板4與振動膜l β间衣私良率（Yleld)。背板*的音孔提供聲音傳遞到 細m 2的路經。空氣腔(AirChamber)5提供可壓縮的空 氣’使振動膜2容易振動。 印同時配合參閱第六圖，此外，還有其他結構包含圓 /動膜2 ’利用支撐結構31a決定振動膜2感應聲壓變 M304866 化的有效面積’此支撐結構31a可由介電材料構成， :;二；具有懸浮立體微級摺臂仏以 支#振_ 2’ _立體微皺摺臂21a具有—立體微 該立體觀料树數交錯的骑卿向料4與絲材 1方向延伸的連續讀赌’使振_ 2為_懸浮結 皺摺懸雜構21可拘束振動膜2 _向移動，但是可允The techniques, means and functions used in this creation are described in more detail in the following examples, and the details are as follows. This is for illustrative purposes only and is not restricted by this structure in patent applications. Referring to FIG. 5 , the Shi Xijing condenser microphone of the preferred embodiment of the present invention has a capacitor structure, and mainly includes a shi shi substrate, a vibrating membrane 2 , a backing plate 4 , an upper electrode 41 , and a protective layer . 42. The Shixi substrate has an air chamber 5 and incorporates the diaphragm 2, the backing plate 4, and the protective layer 42. The backing plate 4 has a support structure 31 and an anti-adhesion structure 45, and the support structure 31 and the upper electrode 41 are disposed on one side of the backing plate 4 adjacent to the crucible substrate. The anti-adhesive structure 45 is a structure of indentations, such as a plurality of protruding portions made of a dielectric material, which prevents the plurality of sound holes 43 from being formed on the adhesive backing plate 4 of the backing plate 4 and the diaphragm 2 during the manufacturing process. With the residual hole 43a, the sound pressure can enter the microphone via the sound hole 43, and the etching hole 43a is used to etch the inner layer. The vibrating membrane 2 is suspended by a wrinkle suspension structure 21; between the ε 丄 substrate 丄 and the backing plate 4, and is composed of a polycrystalline stone material, and the creased suspension structure 21 is a structure in which a suspended micro-wrinkle is suspended. Thereby, the upper electrode 41 and the diaphragm 2 9 M3 04866 . form a capacitor. The sound reaches the diaphragm 2' as the lower electrode via the sound hole 43 of the backing plate 4. The diaphragm 2 is deformed as the sound cover changes, causing a change in capacitance. The structural layer of the preferred embodiment of the present invention can deposit polycrystalline stone (P〇1ySilicon) by low pressure chemical vaporization (LP), and utilize ion implantation technology to shed or _ sub Planted on this (four), and then using the anneal (Anneaiing) technology, the polycrystalline stone diaphragm 2 becomes a low-stress film. The structure comprises: a meninges structure 2, the effective area for determining the sound pressure change of the diaphragm 2 is determined by the support structure 31, and the vibrating membrane 2 is supported by the sensitive suspension structure 21, so that the diaphragm 2 is a suspended structure, and the wrinkle suspension structure 21 is a three-dimensional. The structure of the 彳 deformation wrinkle 'support structure 31 can restrain the lateral movement of the plane, but has a large deformation perpendicular to the direction of the diaphragm 2, which can reduce the stress of the diaphragm 2 and improve the sensitivity of the microphone. The recessed structure of the anti-adhesive structure 45 is first recorded on the upper electrode 41 (4), and then covered by the protective layer 42 to form the recessed structure of the back plate 4 and the back plate 4. Many recessed structures on the backboard 4 (toe-resistant coffee) ''«U-cut 1 air gap 3 process, can reduce the area of the back plate 4 and the diaphragm 2 contact' can easily separate the back plate 4 and vibration after engraving Membrane l β intercoating rate (Yleld). The sound hole of the back panel* provides a path for the sound to be transmitted to the fine m 2 . The air chamber (AirChamber) 5 provides compressible air to make the diaphragm 2 easy to vibrate. At the same time, the printing is accompanied by the sixth drawing. In addition, there are other structures including the circular/moving film 2'. The supporting structure 31a determines the effective area of the diaphragm 2 to induce the sound pressure change M304866. The supporting structure 31a may be composed of a dielectric material: ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; Read the gambling 'make the vibration _ 2 _ suspension wrinkles and folds the hybrid structure 21 can restrain the diaphragm 2 _ moving, but can be allowed
許振動膜2垂直方向的變形，可降低振動膜2應力與提高 麥克風靈敏度，且迴焊過程所造成的殘留應力小，故靈敏 度不受迴焊過程影響。 ▲，再同時配合參閱第七圖，係為支撐結構3比之另一 車乂佺貝靶例，此支撐結構31b可以為環狀分佈的獨立凸塊 用來隔開振動膜2與背板4，也可具有相同之功效。 本創作另一較佳實施例之結構層請參閱第八圖，係以 皺摺懸浮結構21支撐振動膜2，使振動膜2為一懸浮結 構，皺摺懸浮結構21為一立體可變形皺摺結構。防黏著 結構45之凹陷結構是先在上電極41往下蝕刻穿數個凹 陷，再由保護層42覆蓋，即可形成背板4的凹陷結構與 背板4。背板4上的許多凹陷結構應用於濕蝕刻空氣間隙 3過程中，可減少背板4與振動膜2接觸的面積，於濕钱 刻後可輕易分離背板4與振動膜2，提高製程良率 (Yield)。背板4的音孔43提供聲音傳遞到振動膜2的路 控。空氣腔（AirChamber)5提供可壓縮的空氣，使振動膜 2容易振動。上述振動膜2受立體可變形皺摺懸浮結構21 11 M304866 拘束，因此可在背板4與矽基材丨所形成的空間中有垂直 方，最大位移，提高麥克風靈敏度，且迴焊過程所造成的 殘留應力小’故靈敏度不受迴焊過程影響。 —前述本創作之較佳實施例揭露如上，然其並非用以限 „創作之創作手段，_f此技藝者，射在不脫離本 創作之精神和範圍内，作各種之更動與修改，因此本創作 之保護範圍當視後附之申請專利範圍所界定者為準。 【圖式簡單說明】 美國第5,888，δ45號專利之石夕晶電容式麥克 ^構之主要代表圖，提供本體截面示意圖。 晶電容式麥克 弟二圖：係為美國第5, 870, 482號專利之矽 ，結構之主要代表圖，提供立體示意圖 ^6, 535> 46〇f^#，i^-^構之衫代表圖，提供本體截面示意圖。 =四圖：係為依默Uang創作之石夕晶電 ，之主要代翔，提供讀之截 的^視佳實施例之發晶電容式麥克風結構 眉，用以表示振動 依照本創作較佳實施例的俯視 :與支撐結構之單一環狀凸塊結構。 第七圖··依照本創作其 振動膜與支據結構之ΓίίΓ例的俯視圖，用以表示 第八圖：錢本^Hi凸塊環狀分佈結構。 另一1 讀魏例之衫電容式麥克風 12 M304866 結構的剖面視圖。 附件一 ：W. J. Wang，LM· Lin，Q· B. Zou，and X· X· Li， “Modeling and characterization of a silicon condenser microphone,J. Micromech. Microeng., vol. K pp· 403-409， 2004。 【主要元件符號說明】 (習知結構） 1〇〇 振動膜 110背板 l〇〇a振動膜 102 皺摺結構 103邊界條件固定端 103a邊界條件自由端 60 可變電容 Π2振動膜 140 孔洞背板 130 矽基材 120空氣間隙 100b振動膜 102a皺摺結構 ll〇a背板 111銲墊 (本創作） 13 M304866 1 砍基材 2 振動膜 21 皺摺懸浮結構 21a 懸浮立體微皺摺臂 3 空氣間隙 31 支撐結構 31a 支撐結構 31b 支撐結構 4 背板 41 上電極 42 保護層 43 音孔 43a 蝕刻孔 45 防黏著結構 5 空氣腔The deformation of the diaphragm 2 in the vertical direction can reduce the stress of the diaphragm 2 and improve the sensitivity of the microphone, and the residual stress caused by the reflow process is small, so the sensitivity is not affected by the reflow process. ▲, and at the same time, referring to the seventh figure, the support structure 3 is an example of another car mussel target. The support structure 31b may be an annularly distributed independent protrusion for separating the diaphragm 2 and the back plate 4 , can also have the same effect. Referring to the eighth embodiment, the structural layer of another preferred embodiment of the present invention supports the vibrating membrane 2 by the wrinkle suspension structure 21, so that the vibrating membrane 2 is a suspended structure, and the corrugated suspension structure 21 is a three-dimensional deformable wrinkle. structure. The recessed structure of the anti-adhesive structure 45 is formed by first etching a plurality of recesses under the upper electrode 41 and then covering the protective layer 42 to form the recessed structure of the back plate 4 and the back plate 4. The plurality of recessed structures on the back plate 4 are applied to the process of wet etching the air gap 3, and the area of the back plate 4 contacting the diaphragm 2 can be reduced, and the back plate 4 and the diaphragm 2 can be easily separated after the wet money to improve the process. Rate (Yield). The sound hole 43 of the back plate 4 provides a path for the sound to be transmitted to the diaphragm 2. The air chamber (AirChamber) 5 provides compressible air to make the diaphragm 2 vibrate easily. The vibrating membrane 2 is restrained by the three-dimensional deformable wrinkle suspension structure 21 11 M304866, so that there is a vertical direction in the space formed by the backing plate 4 and the crucible substrate, the maximum displacement, the sensitivity of the microphone is improved, and the reflow process is caused. The residual stress is small, so the sensitivity is not affected by the reflow process. - The preferred embodiment of the present invention is disclosed above, but it is not intended to limit the creative means of creation, and the artist is required to make various changes and modifications without departing from the spirit and scope of the present invention. The scope of protection of the creation shall be subject to the definition of the scope of the patent application. [Simplified description of the drawings] The main representative diagram of the Shihua crystal capacitor type of the US Patent No. 5,888, δ45 provides a schematic diagram of the body section. Crystal Capacitor McGrady II: It is the main representative of the structure of the US Patent No. 5, 870, 482. It provides a three-dimensional diagram ^6, 535>46〇f^#, i^-^ The figure provides a schematic diagram of the cross section of the body. = Four diagrams: It is the Shi Xijing electric created by Yimen Uang, the main generation of Xiang, providing a read-through section of the crystal-like condenser microphone structure of the preferred embodiment. The vibration is in accordance with the top view of the preferred embodiment of the present invention: a single annular bump structure with the support structure. The seventh figure is a top view of the diaphragm and the support structure according to the present invention, and is used to represent the eighth figure: Money Ben ^Hi bump Circular distribution structure. Another 1 read cross-sectional view of the structure of the condenser microphone 12 M304866. Annex 1: WJ Wang, LM· Lin, Q·B. Zou, and X·X· Li, “Modeling and characterization Of a silicon condenser microphone, J. Micromech. Microeng., vol. K pp· 403-409, 2004. [Main component symbol description] (conventional structure) 1〇〇Vibration film 110 back plate l〇〇a diaphragm 102 Wrinkle structure 103 boundary condition fixed end 103a boundary condition free end 60 variable capacitance Π2 diaphragm 140 hole back plate 130 矽 Substrate 120 Air gap 100b Vibrating film 102a Wrinkle structure 〇 背 back plate 111 pad (this creation) 13 M304866 1 Chopping substrate 2 Vibrating film 21 Wrinkle suspension structure 21a Suspension stereo wrinkle arm 3 Air gap 31 support structure 31a support structure 31b support structure 4 back plate 41 upper electrode 42 protective layer 43 sound hole 43a etching hole 45 anti-adhesion structure 5 air cavity
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