TWM304782U - Compact bandpass filter with dual-passband response - Google Patents

Compact bandpass filter with dual-passband response Download PDF

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Publication number
TWM304782U
TWM304782U TW95213257U TW95213257U TWM304782U TW M304782 U TWM304782 U TW M304782U TW 95213257 U TW95213257 U TW 95213257U TW 95213257 U TW95213257 U TW 95213257U TW M304782 U TWM304782 U TW M304782U
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Taiwan
Prior art keywords
impedance
substrate
resonator
dual
unit
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TW95213257U
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Chinese (zh)
Inventor
Min-Hang Weng
Tsai-Chuen Liang
Hon Kuan
Sheng-Hsiung Chang
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Min-Hang Weng
Tsai-Chuen Liang
Hon Kuan
Sheng-Hsiung Chang
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Application filed by Min-Hang Weng, Tsai-Chuen Liang, Hon Kuan, Sheng-Hsiung Chang filed Critical Min-Hang Weng
Priority to TW95213257U priority Critical patent/TWM304782U/en
Publication of TWM304782U publication Critical patent/TWM304782U/en

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Description

M304782 八、新型說明: 【新型所屬之技術領域】 本新型係有關於-種濾、波器,其特別有關於種微小化雙頻帶通 濾波器。 【先前技術】 無線通訊是近年來蓬勃發展的領域,無線通訊收發機細多頻寬 的趨勢發展以提供更㈣性,者可透過單—多模多轉的基地台 即可使用不同的服務。 GSM及WCDMA兩大收發系統’都是以開關切換的方式來達到雙 頻的效果。此類架構需要兩個工作於不同頻段的收發機,故需要較高 =成本、較大的電路面積及較多的神絲。並存式雙頻電路架構的 提出疋用來克服這些缺點。在並存式雙頻電路架構中,單一接收機可 同時工作於2.4GHz及5.2 GHz頻段,其中低雜訊放大器和據波器在 中新鮮為2.4GHz及5.2GHz處皆為通帶,且通帶外訊號需被有效 抑制。雙鮮低雜訊放大H已經被設計發明來達顺需的效果,但雙 頻帶濾波器尚未被有效實現。 為了解決上·題,有需要提供—種微小化雙頻帶通紐器以克 服先前技術的缺點。 【新型内容】 本創作之主要目的在提供—種帶通級器,係细調整型步階式 6 M304782 阻抗共振器,用v立 為達上述㈣符合1卿_a/b/g規格之雙通帶響應。 -基板…第—種微小化雙頻帶通_,其包含 一第三步階ΐ阻;抗共振器;—第二步階式阻抗共振器;以及 W自植抗共振器皆配置於絲板之第—表面; 出入端連接於該第—步_ …β 4就輪 嗜第二牛附 式阻抗共振益,一弟二信號輸出入端連接於 〜4阻抗共振器。該基板具有第—表面與第二表面,节第二 器形鄉二步階式阻抗舰11與娜—續式阻抗雜 L之結構;以及該第三步階式阻抗共振11與該第—步階 式阻振器與該第二步階式阻抗共振器形成交_合之結構。 根據本創作之微小化雙頻帶職波器之—特徵,其中調整該步階 植抗共振H之恤抗單元之長度可㈣_複_步赋阻抗共振 為之§皆波位置。 下 為讓本創作之上述和其他目的、特徵、和優點能更明顯易懂, 文特舉數個較佳實施例,並配合所關式,作詳細說明如下。 【實施方式】 雖然本創作可表現為不同形式之實施例,但附圖所示者及於下文 中說明者係為本創作可之較佳實施例,並請了解本文所揭示者係考量 為本創作之一範例,且並非意圖用以將本創作限制於圖示及/或所描述 之特定實施例中。 請參照第la圖並配合第lb圖,其所示為本創作之微小化雙頻帶 通濾波器10之上視圖與側視圖。灰色的區域表示為金屬。該微小化雙 7 M304782 皮錢包含—基板7G 第—步階式阻抗共振器20 ; -第 式阻抗共振器30 ;以及一第三步階式阻抗共振器40皆配置於 该基板70之第—#而% ·卜卜 式阻抗共振器20 Γ一第一,;;=言號輸出入端50連接於該第一步階 共振器4G。縣板㈣_ 72係為接地面73;該第二 ' 、面72 4第一表面 特哭20开1古4 X — 乂白式阻抗共振器3〇與該第一步階式阻抗 i第之賴;奴該第三步_蛾_ 40與 耦人之1^ 器2G與該第二步階式阻抗共振器成交錯 佩侧而〆主Λ的是,該基板7〇可以是刚、RT_DU_ SerieS、 eries同溫共燒陶兗、低溫共燒 電材料與半物峨獅往何-纖叫Γ 連接於該恤抗觀。子長料.°。該雜抗單元之兩端係分別 步階式阻抗丑整該低阻抗單元之長度可輕易控制該 波位置,即可設計-雙_波器1()。 、搌-之"白 該步=====騎階雜抗舰—概響應圖。 式阻抗舰_阻抗峨)可由下式決定: Κ = Ζ2/Ζι ===~該步階式』 I Κ值’移動的範圍有限;另外,亦 8 M304782 不連續面所造成的損失。因此,調整該低阻抗單 可定義,+自喊。該步階式阻抗舰3的長度調整參數· (4) 其中,Μ為該步階式阻抗共振器的總電子長度。 根據(5)與(喊’可_如帛3 _私錯細 特性響應圖。在本創作中,# 、振-之共振 α在本健巾,所烟之基板之介電常數為⑽ 0.635mm。其最佳實施例係選擇 又’、’、 圖所干Μ ο 〇.2 K_0.2,結構參數如第la S^^S1 = 2mm,g1 = 〇.7mm)g2 = 〇2mmg4 = 〇 mmandg6 = 1.3mm。請參,昭第 4 圖,A ,g5 = 0.1 圖。由圖中可知,在24〇Η、日士 創作之實測頻率響應 在.4 GH瑪,返回損失丨S11丨=18 IS21 = 1.54 dB以及頻寬比_ s w ” 入杈失 咖丨⑽ GHz時,1S11i=奶犯 |S21卜1.7dB以及頻寬比=36%。 , 综上所述,本解之雜小倾解猶波器i㈣细三 型步階式阻抗共振器,以交_合形式產生翻響應。特別的是^ 由交錯輕合的特性,可產生傳輸零點並增加騎之獅性。 ^ 雖然本創作已以前述較佳實施例揭示’然其並非用以限 作,任何熟習此技藝者,在不脫離本創作之精神和範圍内,當可 種之更動與修改。如上述的解釋,都可以作各型柄修正^化 不會破壞此創作的精神。因此本創作之保護範圍當視後 範圍所界枝鱗。 9 M304782 【圖式簡單說明】 圖la顯示為本創作之微小化雙頻帶通濾波器之上視圖。 圖lb顯示為本創作之微小化雙頻帶通濾波器之側視圖。 圖2顯示為步階式阻抗共振器之結構圖。 圖3顯示為步階式阻抗共振器之共振特性響應圖。 圖4顯示為本創作之實測頻率響應圖。 • 【主要元件符號說明】 10微小化雙頻帶通濾波器 20第一步階式阻抗共振器 30第二步階式阻抗共振器 40第三步階式阻抗共振器 50第一信號輸出入端 51第二信號輸出入端 60低特性阻抗單元 61高特性阻抗單元 70基板 71第一表面 72第二表面 73接地面M304782 VIII. New description: [New technical field] This new type is related to a kind of filter and wave filter, and it is especially related to a kind of miniaturized dual-band pass filter. [Prior Art] Wireless communication is an area that has flourished in recent years. The trend of fine multi-bandwidth of wireless communication transceivers has been developed to provide more (four) nature, and different services can be used through single-multi-mode multi-turn base stations. Both GSM and WCDMA transceiver systems are designed to achieve dual-frequency switching by switching. This type of architecture requires two transceivers operating in different frequency bands, so higher cost, larger circuit area, and more gods are required. The proposed parallel dual-frequency circuit architecture is used to overcome these shortcomings. In the dual-frequency circuit architecture, a single receiver can work in both the 2.4 GHz and 5.2 GHz bands. The low noise amplifier and the data filter are both passbands and passbands at 2.4 GHz and 5.2 GHz. The external signal needs to be effectively suppressed. Double fresh low noise amplification H has been designed to achieve the desired effect, but the dual band filter has not been effectively implemented. In order to solve the above problems, it is necessary to provide a miniaturized dual-band communication device to overcome the disadvantages of the prior art. [New content] The main purpose of this creation is to provide a kind of band-pass classifier, which is a fine-adjusting step type 6 M304782 impedance resonator, which is used to achieve the above (4) in accordance with the specifications of 1 Qing _a/b/g. Passband response. - substrate ... the first miniaturized dual band pass _, which comprises a third step ΐ resistance; anti-resonator; - second step impedance resonator; and W self-embedded anti-resonator are disposed on the silk plate The first surface; the input end is connected to the first step _ ... β 4 on the wheel to the second cattle attached impedance resonance, and the second input signal is connected to the ~4 impedance resonator. The substrate has a first surface and a second surface, a second-stage two-step impedance ship 11 and a Na-continuous impedance hybrid L; and the third step impedance resonance 11 and the first step The stepped oscillator forms a structure with the second stepped impedance resonator. According to the feature of the miniaturized dual-band occupational wave device of the present invention, the length of the anti-resonance H-resistant element of the step can be adjusted (4) _ complex _ step-enhanced impedance resonance for the § all-wave position. In order to make the above and other objects, features, and advantages of the present invention more obvious and obvious, the preferred embodiments of the present invention are described in detail below. [Embodiment] Although the present invention can be embodied in different forms, the embodiments shown in the drawings and the following description are preferred embodiments of the present invention, and it is understood that An example is created and is not intended to limit the present invention to the particular embodiments illustrated and/or described. Referring to Figure la and in conjunction with Figure lb, there is shown a top view and a side view of the miniaturized dual band pass filter 10 of the present invention. The gray area is represented by metal. The miniaturized double 7 M304782 leather money comprises a substrate 7G first step impedance resonator 20; a first impedance resonator 30; and a third step impedance resonator 40 are disposed on the substrate 70. #且% · 卜卜-type impedance resonator 20 Γ一第一;;; 言号号 input terminal 50 is connected to the first-order step resonator 4G. The county board (4) _ 72 is the ground plane 73; the second ', the surface 72 4 first surface is crying 20 open 1 ancient 4 X — 乂 white type impedance resonator 3 〇 and the first step of the impedance i The third step of the slave _ moth _ 40 and the coupled person 2 2 2G and the second step of the impedance resonator are interlaced and the main side is that the substrate 7 〇 can be just, RT_DU_ SerieS, Eries co-fired pottery at the same temperature, low-temperature co-fired electrical materials and semi-objects 峨 往 - - - - - - Γ Γ Γ Γ Γ Γ Γ Γ Γ Γ Long material. °. The two ends of the hybrid unit are respectively stepped impedance ugly. The length of the low impedance unit can easily control the position of the wave, and the double wave 1 () can be designed. , 搌-之"白 This step ===== riding the stage anti-ship - general response diagram. The impedance ship _impedance 峨 can be determined by the following equation: Κ = Ζ2/Ζι ===~ This step 』 I Κ value moves a limited range; in addition, 8 M304782 loss caused by discontinuous surfaces. Therefore, adjusting the low impedance single can be defined, + self-out. The length adjustment parameter of the stepped impedance ship 3 (4) where Μ is the total electron length of the stepped impedance resonator. According to (5) and (calling ' can _ _ _ 3 _ private fault fine characteristic response diagram. In this creation, #, vibration - the resonance α in the health towel, the dielectric constant of the substrate of the smoke is (10) 0.635mm The best embodiment of the choice is ',', the figure is dry ο 〇.2 K_0.2, the structural parameters such as the first la S^^S1 = 2mm, g1 = 〇.7mm) g2 = 〇2mmg4 = 〇mmandg6 = 1.3mm. Please refer to Figure 4, A, g5 = 0.1. As can be seen from the figure, at 24 〇Η, the measured frequency response of the Japanese creation is .4 GH, the return loss 丨S11丨=18 IS21 = 1.54 dB and the bandwidth ratio _ sw ” into the 丨 丨 (10) GHz. 1S11i=milk commit|S21 1.7dB and bandwidth ratio=36%. In summary, the solution of the miscellaneous decompression device i (four) fine three-step stepped impedance resonator is generated in the form of intersection In particular, the characteristics of the staggered light combination can produce transmission zeros and increase the riding lion. ^ Although the present invention has been disclosed in the foregoing preferred embodiments, it is not intended to be limiting, and any skill is familiar to the art. Those who do not deviate from the spirit and scope of this creation, can be kindly changed and modified. As explained above, all kinds of handle corrections can not destroy the spirit of this creation. Therefore, the scope of protection of this creation is 9 M304782 [Simple description of the diagram] Figure la shows the top view of the miniaturized dual-band pass filter for this creation. Figure lb shows the side of the miniaturized dual-band pass filter for this creation. Figure 2. Figure 2 shows the structure of a stepped impedance resonator. The resonance characteristic response diagram of the stepped impedance resonator is shown in Fig. 4. Fig. 4 shows the measured frequency response diagram of the creation. • [Main component symbol description] 10 miniaturized dual band pass filter 20 first step impedance resonator 30 second stepped impedance resonator 40 third stepped impedance resonator 50 first signal input/output terminal 51 second signal input/output terminal 60 low characteristic impedance unit 61 high characteristic impedance unit 70 substrate 71 first surface 72 Two surface 73 ground plane

Claims (1)

M304782 九、申請專利範圍: 1· 一種微小化雙頻帶通濾波器,其包含: 一基板’具有第一表面盘笛-本品廿丄 -笛-牛_ 中,該第二表面係為接地面; α ό式阻抗共振器,係配置於該基板之第-表面; 弟-步階式阻抗共振器,係配置於該基板之第一表面,並與該第 -步階式阻抗共振II形成直絲合之結構; 一第三步階式阻抗共脑,雜置_基板之第—麵,並與該第 -步階式阻抗錄辦該第二步階雜抗共撼形歧之 結構; 々第一信號輸出人端,係連接於該第—步階式阻抗共振器;以及 第二信號輸出人端,係、連接於該第三步階式阻抗共振器。 2.如申請專利範圍第i項所述之微小化雙頻帶通遽波器,其中該步階 式阻抗共振器更包含: 一低阻抗單元;以及 一咼阻抗單元,該高阻抗單元之兩端係分別連接於該低阻抗單元,· 以及 其中,調魏恤抗單元之長度可控讎㈣式阻抗共鋪之譜波 位置。 3·如申請專利範圍第1項所述之微小化雙頻帶通濾波器,其中該基板 可以是 FR4、RT-Duroid Series、Al2〇3、R〇 Series、高温共燒陶莞、 11 M304782 低溫共燒陶瓷、高介電材料、低介電材料與半導體所組成族群中之 任何一種基板材料。M304782 IX. Patent application scope: 1. A miniaturized dual-band pass filter, comprising: a substrate having a first surface flute-in this product 廿丄-笛-牛_, the second surface is a ground plane An α-type impedance resonator is disposed on a first surface of the substrate; a step-step impedance resonator is disposed on the first surface of the substrate and forms a straight line with the first-step impedance resonance II a structure of a silk thread; a third step of the impedance of the common brain, mismatching the first surface of the substrate, and recording the structure of the second step of the hybrid anti-coherent shape with the first step impedance; The first signal output terminal is connected to the first step impedance resonator; and the second signal output terminal is connected to the third step impedance resonator. 2. The miniaturized dual-band pass chopper according to claim i, wherein the stepped impedance resonator further comprises: a low impedance unit; and a 咼 impedance unit, the two ends of the high impedance unit The system is respectively connected to the low-impedance unit, and wherein the length of the adjustment-resistant unit is controllable (four)-type impedance co-shopping spectral wave position. 3. The miniaturized dual-band pass filter as described in claim 1, wherein the substrate may be FR4, RT-Duroid Series, Al2〇3, R〇Series, high temperature co-fired pottery, 11 M304782 low temperature A substrate material of any of the group consisting of ceramics, high dielectric materials, low dielectric materials, and semiconductors. 1212
TW95213257U 2006-07-27 2006-07-27 Compact bandpass filter with dual-passband response TWM304782U (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102868012A (en) * 2012-09-07 2013-01-09 航天恒星科技有限公司 High-temperature superconductive micro-strip resonator and filter containing same
TWI821002B (en) * 2022-11-04 2023-11-01 特崴光波導股份有限公司 24GHz BAND-PASS FILTER

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102868012A (en) * 2012-09-07 2013-01-09 航天恒星科技有限公司 High-temperature superconductive micro-strip resonator and filter containing same
CN102868012B (en) * 2012-09-07 2015-02-11 航天恒星科技有限公司 High-temperature superconductive micro-strip resonator and filter containing same
TWI821002B (en) * 2022-11-04 2023-11-01 特崴光波導股份有限公司 24GHz BAND-PASS FILTER

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