TWM302049U - Array-type X-ray light source exposure apparatus - Google Patents

Array-type X-ray light source exposure apparatus Download PDF

Info

Publication number
TWM302049U
TWM302049U TW95210929U TW95210929U TWM302049U TW M302049 U TWM302049 U TW M302049U TW 95210929 U TW95210929 U TW 95210929U TW 95210929 U TW95210929 U TW 95210929U TW M302049 U TWM302049 U TW M302049U
Authority
TW
Taiwan
Prior art keywords
source
layer
electron emission
ray
cathode
Prior art date
Application number
TW95210929U
Other languages
Chinese (zh)
Inventor
Jeng-Yuan Jeng
De-Feng Jan
Kuei-Wen Jeng
Original Assignee
Teco Elec & Machinery Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Teco Elec & Machinery Co Ltd filed Critical Teco Elec & Machinery Co Ltd
Priority to TW95210929U priority Critical patent/TWM302049U/en
Publication of TWM302049U publication Critical patent/TWM302049U/en

Links

Landscapes

  • Cold Cathode And The Manufacture (AREA)

Description

M302049 八、新型說明: 【新型所屬之技術領域】 本創作係有關-種X光產生裂置,尤指—種係以四極 結構之場發射器作為陰極電子源之χ光產生裝置。 【先前技術】 自十九世紀X光意外被發現,並可以清楚透 體後,在之後眾多科學家競相研究下,開啟了科學 性的-頁,特別是在醫學臨床上的應用,更是造福許多: ,而如今:X光的應用除了被利用於醫學領域外 應用在工業用途及保全作業上。 而目前一般習知的x光曝光裝置,其他光產生社 構係包括-陰極電子源及一陽極革巴材,且同時設置於一直口 空腔體中,其中該陰極電子源# A /、 ,^ ^ ?, 為種由鎢或碳材質所構 成之熱琶子㈣源,而該陽極革巴材係為一金屬乾材,如鎢 、銀或銅所製成,而該直空月*俨 、、、 ^., 更包括一透明窗,因此當 ;子束自陰極電子源射出後,利用陰陽極之間的高壓電差 2速其電子運動,以撞擊該陽極的金_ 加以曝光於光阻上透明由導出經過被照物後,最後再 作為中的X光曝光裝置’係利用熱電子發射源 才^获源’傳統的熱電子源必須消耗較大的能量 能;擊;的產生,而同時為了讓電子束具有足夠的 她極㈣,該陽極及陰極之間則必須保持一定 之㈣,以提供足夠之電壓差以利於該電子束加速,然而 M302049 此舉雖有利於高壓電差的產生,但對於產生的電子束而+ .丄因為過長的距離而使電子束產生擴冑的情況,造成電子 =度下降,使得電子束撞上陽極靶材後所產生的χ光品質 ’欠差γ直接影響後續χ光之應用,而習知的陰陽極結構中 亦無裳設用以收敛電子束的結構,成為該習知χ 置之缺失。 衣 ^為了解決上述的電子束產生擴散的情況,之後的習 •知技蟄便揭露一種非熱電子發射源之奈米碳管之陰極電子 《射源材爿,並利用收敏結構之場發射器作為陰極電子束 ’X射源的X光曝光裝置’其上設有一用以收斂電子束的收 放網罩10a,如第一圖所示之結構,該網罩丨此上具有一 閘極層100a及一收傲層101a,該網罩服上更設有複數平 行排列的透孔1〇2a,該透孔102a的位置係對準於陰極電子 源12a及陽極革巴材14a上,以作為陰極奈米碳管電子源 _〗2a所產生的電子束射向陽極靶材14a時穿越網罩i〇a的 通道,由於係採用奈米碳管為電子發射源因此無須額外提 供熱源以激發電子發射源,以陰陽極間之高壓即可汲引陰 極電子發射源產生電子束,更進一步利用收敛層同時排: 以=的電子,使電子束以收斂的形式撞擊革巴材⑷並產 ^能量的轉換,使X光自陽極靶材14a之另一側經由透明 窗16a透出經過被照物後於光阻上曝光成像。 雖然上述的收敛結構之電子發射源,可有效將陰陽極 結構間之陰極電子源12a所產生的電子束加以收*,並直 接撞擊該陽極革巴材14a,產生品質較好的X光,並由革巴材 M302049 14a之另一側所設置之透明窗丨 X光係自透明窗16a透出後,係=,但由於所產生的 當發散的X光照射於被照物上^^種發散狀態,因此 ,使得X弁穿、# >职& 4 Λ· Μ λ光無法產生聚焦效果 使仔U牙透被照物後無法精確 該裝置中未盡理想之處。 成像方、先阻上,成為 【新型内容】 針對上述之缺失,本創作 有複數收斂透鏡之陣列式1光::在:提供-種具 鏡之設置,使由透明窗所透射出’错由該收傲透 U果,以精確成像於欲成像之光阻上。 為了達成上述之目的,本創 源曝光裝置,該裝置俜主要勺紅捉仏卿列式X先 # 包括—x光背光源及複數收傲 錢,其中該X光背光源更包括—陰極電子發射裝置、一支 %極把材及-透窗’該陰極電子發射裝置係為一種呈四極 結構之複數奈㈣管電子發射源,其上設有—閘極層及一 收傲電極層,而該陽極革巴材設於對應陰極電子發射裝置之 位置,同時陽極革巴材外側設有一透窗,最後透窗外設有對 應於電子發射源之複數收斂透鏡,藉由該背光源使產生之 X光’經由透窗透射而ψ ^ ,一 後’再、、堂由收敛透鏡聚焦,照射 被照物後可精確成像於欲曝光之光阻上。 【貫施方式】 。月ί閱第圖,係為本創作之χ光曝光機結構之剖視 不思圖’呑亥X光曝光機1夕么士士这义么^ ν .. 工^戍i之結構係包括一 X光背光源η及 複數聚焦透鏡12 ’而該X朵咎伞 Λ八九月九源11更包括一陰極電子發 M302049 射裝置110、、—陽極靶材112及一透窗114 ,其中該陽極 萆巴材112係為金屬材質,設於該陰極電子發射裝置11〇之 上方,而該透窗114則設於該陽極靶材112之外側,與複 數聚焦透鏡12連接;另外,該陰極電子發射裝置110係為 種八有四極、、’α構之奈米碳管電子發射源結構,更包括— 基板601,係為玻璃材質,於該基板β〇ι um 緣層602二該第—絕緣層602上形成一閘極導電層603广 於^閘極$電層603上再形成一第二絕緣層_,之 於::ϊ緣層604設有一收斂層6〇5,該收斂層605係為 :::通之金屬層,以提供一電壓對通過之電子束產生 ^ 才、上述之弟一絶緣層602、閘極導電層 二:::緣層604及收斂層6〇5上形成複數穿孔_ 二二_之排列方式係呈陣列式,該穿孔 :二曝:在一於穿孔嶋内部所形成凹陷區物中,並 内設置一陰極電则,最後於該陰極 迅極608上叹有一奈米碳管 奈米石炭管發射裝置110 =源609 ’以形成整個 ^ ,卜,在上述之複數聚焦透鏡12 ===各個奈米碳管電子發射請,亦呈 見陣列式排列,其外觀如第三圖所示。 數Ji;=,係為本創作之操作剖視圖,其係以複 、、、之不未厌g黾子發射源6〇9結構來展 子藉由閘極導電層603由太、 °出,黾 後形成-電子束1。(如= 射源609汲引出 該電子束Η)經過收敛層6〇5 ‘:材,,而 于果10截面之發散程度 • M3 02049 即被收斂層605所限制,使電子束1〇集中 112之預定區域中。 讀%極乾材 …續請參閱第四圖,如上所述,本創作之χ 係為-種具有奈米碳管作為陰極電子發射二 當奈米碳管電子發射源_所產生之電子幻。二 :種低能量之X光2〇,之後再經由透窗m透= ::::^^^ 二所5又之4焦透鏡12將發散之χ 形射於放置於基座3。二= 田光2〇準確照射於被昭物40德 ,同時被照物40被X光20所昭 …、物40後 光阻6。上,如第五圖(B);射之::像5〇,成像於背後之 J所不’藉此,透過兮 數奈米碳管電子發射源6〇9 i過及早一或稷 112所產生小區域X光2。,再==撞擊陽極㈣ 形成收斂之X光束,除了 二、透鏡12再加以聚焦 後清楚成像於光阻60上,更於被照物品40上,最 小規模區域之曝光作用。 σ ^擇之照射區域進行 惟以上所述之實施方式,Η 能以此限定本創作實施範圍二二土之貫施實例,當不 說明書内容所作之等效變化2 1彳作申§t專利範圍及 專利涵蓋範圍。 Μ修飾1應屬本創作下述之 【圖式簡單說明】 第一圖、係為習知之結構剖視圖。 M302049 :二圖、係為本創作之結構剖視示意圖 Γ三圖、料本創作之曝μ置透鏡示意圖。 f四圖、係為本創作之操作示意圖。 f五圖(A )、係為本創作之X光操作示意圖 第五圖(β )、係為本創作之X光操作示意圖 【主要元件符號說明】 收斂網罩l〇a 收斂層l〇la 陰極電子源12a 透明窗16a (本創作) X光曝光機1 奈米碳管發射裝置11〇 透窗114 電子束10 基座30 影像50 基板601 閘極導電層603 &斂層605 凹陷區域607 電子發射源609 閘極層l〇〇a 透孔102a 陽極把材14a X光背光源11 陽極乾材112 聚焦透鏡12 X光20 被照物4〇 光阻60 第一絕緣層602 第二絕緣層604 穿孔606 陰極電極608M302049 VIII. New Description: [New Technology Field] This creation is related to the X-ray generation cracking, especially the seed light generator with a quadrupole field emitter as the cathode electron source. [Prior Art] Since the X-ray accident was discovered in the 19th century, and it was clear that it was transparent, after many scientists began to study it, it opened up a scientific-page, especially in medical clinical applications, which is beneficial to many. : And nowadays: X-ray applications are used in industrial applications and security operations in addition to being used in the medical field. In the conventional x-ray exposure apparatus, other light-generating structures include a cathode electron source and an anode leather material, and are simultaneously disposed in the straight mouth cavity, wherein the cathode electron source # A /, ^ ^ ?, is a kind of hot tweezers (four) source made of tungsten or carbon material, and the anode leather bar is made of a metal dry material, such as tungsten, silver or copper, and the straight sky *俨, , , ^., further includes a transparent window, so when the beam is ejected from the cathode electron source, the electrons are moved by the high voltage difference between the cathode and the cathode at a speed of 2, and the gold _ which is impinging on the anode is exposed. The transparency on the photoresist is derived from the object after being passed through, and finally the X-ray exposure device is used as the source of the hot electron emission source. The conventional hot electron source must consume a large amount of energy energy; At the same time, in order to make the electron beam have enough her pole (four), the anode and cathode must be kept constant (four) to provide sufficient voltage difference to facilitate the electron beam acceleration, but M302049 is beneficial to high voltage electricity. The difference is generated, but for the generated electron beam +. If the distance is too long, the electron beam is dilated, causing the electron=degree to decrease, so that the defect quality γ produced by the electron beam hitting the anode target directly affects the application of the subsequent ray, and the conventional There is also no structure in the anodized structure for converging the electron beam, which is a lack of the conventional device. In order to solve the above-mentioned problem of electron beam diffusion, the latter method discloses a cathode electron of a carbon nanotube of a non-thermal electron emission source, and uses a field emission of a sensitization structure. The X-ray exposure device as the cathode electron beam 'X-ray source' is provided with a retractable mesh cover 10a for converging the electron beam, as shown in the first figure, the mesh cover has a gate thereon The layer 100a and the arrogant layer 101a are further provided with a plurality of parallel-arranged through holes 1〇2a, the positions of which are aligned with the cathode electron source 12a and the anode leather material 14a. As the electron beam generated by the cathode carbon nanotube electron source _ 2a is directed to the anode target 14a, the passage through the mesh cover i〇a, since the carbon nanotube is used as the electron emission source, there is no need to provide an additional heat source to excite The electron emission source can use the high voltage between the anode and the cathode to induce the cathode electron emission source to generate an electron beam, and further utilize the convergence layer to simultaneously discharge: the electrons of the electron beam cause the electron beam to collide with the leather material in a convergent form (4) and generate energy. Conversion of X-ray from anode target 14 The other side of a is exposed to the photoresist through the transparent window 16a and exposed to the photoresist. Although the above-mentioned electron emission source of the convergent structure can effectively collect the electron beam generated by the cathode electron source 12a between the anode and cathode structures, and directly hit the anode leather material 14a, the X-ray of good quality is produced, and The transparent window X light system provided on the other side of the leather material M302049 14a is exposed from the transparent window 16a, but is generated due to the divergence of the X-rays emitted from the illuminated object. The state, therefore, makes X 弁, # >职& 4 Λ· Μ λ light can not produce a focusing effect so that the U tooth can not be accurate in the device after the subject is not accurate. Imaging side, first blocking, become [new content] In response to the above-mentioned lack, this creation has a complex convergence lens array type 1 light:: in: provide - the setting of the mirror, so that the transparent window transmits the wrong The arrogant U fruit is accurately imaged on the photoresist to be imaged. In order to achieve the above purpose, the present invention has the main exposure device, the main device of the device, including the x-ray backlight and the plurality of digital backlights, wherein the X-ray backlight further comprises a cathode electron emission device. A cathode electrode and a through-the-chamber 'the cathode electron-emitting device is a four-pole structure of a plurality of n-tube electron-emitting sources, and has a gate layer and an anode electrode layer, and the anode leather The material is disposed at a position corresponding to the cathode electron-emitting device, and a transparent window is disposed outside the anode leather material. Finally, a plurality of convergent lenses corresponding to the electron emission source are disposed outside the window, and the generated X-ray is passed through the backlight. Through the window transmission and ψ ^, after a 're-, the church is focused by the convergent lens, after the illumination of the object can be accurately imaged on the photoresist to be exposed. [The way of implementation]. The monthly picture is based on the cross-sectional view of the structure of the Twilight Exposure Machine. The 'Xi Hai X-ray Exposure Machine 1 么 士 士 士 ^ ^ ^ ^ ν .. The structure of the work ^ 戍 i includes a The X-ray backlight η and the plurality of focusing lenses 12 ′ and the X-ray umbrella Λ 九 九 九 九 九 九 九 九 九 九 九 九 九 九 九 九 九 九 九 九 九 九 九 九 九 九 九 九 九 九 九 九 九 九 九 九 九 九 九 九 九 九 九The bakelite 112 is made of a metal material and is disposed above the cathode electron-emitting device 11 , and the transmissive window 114 is disposed on the outer side of the anode target 112 and connected to the plurality of focusing lenses 12 . In addition, the cathode electron-emitting device The 110 series is an eight-pole, four-pole, nano-carbon nanotube electron-emitting source structure, and further includes a substrate 601, which is made of glass, and the first insulating layer 602 is disposed on the substrate β 〇 um edge layer 602. Forming a gate conductive layer 603 over the gate electrode layer 603 and forming a second insulating layer _, the:: the edge layer 604 is provided with a convergence layer 6〇5, the convergence layer 605 is: :: pass through the metal layer to provide a voltage pair to pass through the electron beam generation, the above-mentioned brother-insulation layer 602, gate The conductive layer 2::: the edge layer 604 and the convergence layer 6〇5 form a plurality of perforations _ 22 _ arranged in an array, the perforation: two exposure: in a recessed area formed inside the perforated crucible, And a cathode electric current is arranged therein, and finally a nano carbon nanotube nano carboniferous tube emitting device 110 = source 609 ' is slanted on the cathode fast pole 608 to form the whole ^, 卜, in the above plurality of focusing lenses 12 === The electron emission of each carbon nanotube is also arranged in an array, and its appearance is as shown in the third figure. The number Ji;=, is a cross-sectional view of the operation of the creation, which is a complex, and the 黾 黾 发射 发射 发射 发射 发射 藉 藉 藉 藉 藉 藉 藉 藉 藉 藉 藉 藉 藉 藉 藉 藉 藉 藉 藉 藉 藉 藉 藉 藉 藉 藉 藉 藉 藉 藉After formation - electron beam 1. (eg = source 609汲 leads the electron beam Η) through the convergence layer 6〇5 ': material, and the degree of divergence in the section of fruit 10 • M3 02049 is limited by the convergence layer 605, so that the electron beam 1 〇 concentrated 112 In the predetermined area. Read % Extremely Dry Materials ... Continued to see the fourth picture. As mentioned above, the enthalpy of this creation is an electronic illusion with a carbon nanotube as the electron emission source of the cathode electron emission diode. Second: a low-energy X-ray 2 〇, and then placed on the pedestal 3 via a transmissive window m through :: :::: ^ ^ ^ two 5 and 4 focal lenses 12 . Two = Tianguang 2〇 accurately irradiated to the 40th of the Zhaozhao, while the object 40 was illuminated by X-ray 20, and after 40, the photoresist was 6. On, as shown in the fifth picture (B); shot:: like 5 〇, imaged in the back of the J does not 'by this, through the number of carbon nanotubes electron emission source 6 〇 9 i too early or 稷 112 A small area of X-ray 2 is produced. And then == impacting the anode (4) to form a convergent X-beam, except that the lens 12 is then focused and then imaged on the photoresist 60, and on the illuminated object 40, the exposure of the smallest area. σ ^Selected irradiation area to carry out the above-mentioned implementation method, Η can limit the implementation of the scope of the creation of this two-two-dimensional example, when the content of the description does not change the equivalent of 2 1 彳 申 § patent scope And the scope of patent coverage. ΜModification 1 should be the following in this creation. [Simplified description of the drawings] The first figure is a cross-sectional view of a conventional structure. M302049: The second figure is a schematic cross-sectional view of the structure of the creation. f Four diagrams are diagrams of the operation of the creation. f Figure 5 (A), the fifth diagram of the X-ray operation diagram of the creation (β), is the schematic diagram of the X-ray operation of the creation [main component symbol description] Convergence mesh cover l〇a Convergence layer l〇la cathode Electron source 12a transparent window 16a (this creation) X-ray exposure machine 1 carbon nanotube emitting device 11 through window 114 electron beam 10 pedestal 30 image 50 substrate 601 gate conductive layer 603 & condensed layer 605 recessed area 607 Transmitting source 609 gate layer l〇〇a through hole 102a anode material 14a X-ray backlight 11 anode dry material 112 focusing lens 12 X-ray 20 object 4 〇 photoresist 60 first insulating layer 602 second insulating layer 604 perforation 606 cathode electrode 608

Claims (1)

* M302049 九、申請專利範圍: 1· 一種陣列式X光源曝光裝置,係包括: - X光背光源,其内具有—陰極電子發射裝置、—陽極 革巴材及-透窗,該陽極革巴材係對應於該陰極電子發射 源,而該透窗係設於該陽極靶材之外側;以及 複數聚焦透鏡,係設於透窗之外側。 2. 如申請專利範圍第1項所述之陣列式义光源曝光装置, 其中陰極電子發射裝置包括-基板,於前述基板上形成 一第一絕緣層,於前述之第-絕緣層上形成有-_ ’該閘極層上形成有-第二絕緣層,以及該第二絕緣^ 上形成有-收敛層,前述之第—絕緣層、閘極層、第二 :緣層及收斂層上形成有複數穿孔,以及在穿孔内暴霖 基板之凹陷區域,於前述之凹陷區域内設有奈米碳管電 子發射源。 3. ::請專利範圍第2項所述之陣列μ光源曝光裝置, 其中该基板係為玻璃材質。 4. ::請專利範圍第2項所述之陣列式X光源曝光聚置, ”中邊收斂層係為一導通之金屬層。 並!I專利粑圍第2項所述之陣列式χ光源曝光裝置, :、:示米碳管電子發射源更連接—陰極電極。 :中=範圍第1項所述之陣列式X光源曝光裳置, 具中蝓極靶材係為金屬材質。 7.:: = =圍第丨項所述之陣列式X光源曝光裝置, …、、、透鐃所設之位置係對應於電子發射源。* M302049 IX. Patent application scope: 1. An array type X-ray source exposure device, comprising: - an X-ray backlight source having a cathode electron emission device, an anode leather material and a through window, the anode leather material Corresponding to the cathode electron emission source, the transmissive window is disposed on the outer side of the anode target; and the plurality of focusing lenses are disposed on the outer side of the transmissive window. 2. The array type light source exposure apparatus according to claim 1, wherein the cathode electron emission device comprises a substrate, a first insulating layer is formed on the substrate, and the first insulating layer is formed with - _ 'The gate layer is formed with a second insulating layer, and the second insulating layer is formed with a - converging layer, and the first insulating layer, the gate layer, the second: edge layer and the converging layer are formed thereon The plurality of perforations, and the recessed area of the violent substrate in the perforation, are provided with a carbon nanotube electron emission source in the recessed area. 3. The array μ source exposure apparatus of claim 2, wherein the substrate is made of glass. 4. :: Please contact the array X-ray source as described in item 2 of the patent scope for exposure, "The middle convergence layer is a conductive metal layer. And the array type xenon light source described in the second paragraph of the patent. Exposure device, :,: The carbon nanotube electron emission source is more connected-cathode electrode. : The medium-range X-ray source described in item 1 is exposed, and the medium-dip target is made of metal. :: = = The array type X-ray source exposure apparatus described in the above paragraphs, ..., the position of the lens is corresponding to the electron emission source.
TW95210929U 2006-06-22 2006-06-22 Array-type X-ray light source exposure apparatus TWM302049U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW95210929U TWM302049U (en) 2006-06-22 2006-06-22 Array-type X-ray light source exposure apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW95210929U TWM302049U (en) 2006-06-22 2006-06-22 Array-type X-ray light source exposure apparatus

Publications (1)

Publication Number Publication Date
TWM302049U true TWM302049U (en) 2006-12-01

Family

ID=38221212

Family Applications (1)

Application Number Title Priority Date Filing Date
TW95210929U TWM302049U (en) 2006-06-22 2006-06-22 Array-type X-ray light source exposure apparatus

Country Status (1)

Country Link
TW (1) TWM302049U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9826612B2 (en) 2015-06-18 2017-11-21 Wistron Corporation X-ray emission device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9826612B2 (en) 2015-06-18 2017-11-21 Wistron Corporation X-ray emission device
TWI616896B (en) * 2015-06-18 2018-03-01 緯創資通股份有限公司 X-ray emission device

Similar Documents

Publication Publication Date Title
Basu et al. A portable x-ray source with a nanostructured Pt-coated silicon field emission cathode for absorption imaging of low-Z materials
TWI307110B (en) Method and apparatus for controlling electron beam current
US7889844B2 (en) Multi X-ray generator and multi X-ray imaging apparatus
KR100867172B1 (en) Carbon Nano Tube based X-ray tube structure
JP4945763B2 (en) Electron beam exposure system
US20110249802A1 (en) Multi x-ray generating apparatus and x-ray imaging apparatus
US7868850B2 (en) Field emitter array with split gates and method for operating the same
JP2011029072A (en) X-ray generator, and x-ray imaging device including the same
CN109273337B (en) On-chip miniature X-ray source and manufacturing method thereof
Chen et al. A double-sided radiating flat-panel X-ray source using ZnO nanowire field emitters
CN1917135B (en) New X ray tube, and fabricating method
KR20070071918A (en) X-ray tube with concave grid using carbon nanotube
TW201128678A (en) X-ray generation device and cathode thereof
Posada et al. Nitrogen incorporated ultrananocrystalline diamond based field emitter array for a flat-panel X-ray source
WO2020098556A1 (en) On-chip miniature x-ray source and manufacturing method therefor
TW200425208A (en) Manufacturing process of carbon nanotube field emission transistor
KR20190114732A (en) X-ray source apparatus and controlling method thereof
JP4268471B2 (en) Cold cathode manufacturing method and apparatus using cold cathode
JP2005032638A5 (en)
TWM302049U (en) Array-type X-ray light source exposure apparatus
CN110199374A (en) Optics addressing, thermionic electron bundle device
JP2530591B2 (en) Pulsed laser photoexcitation electron source device suitable for high current density electron emission
TW200403545A (en) Electron beam exposing method and device
KR100928965B1 (en) Emitter for electron beam projection lithography, method of operation and manufacturing method
JP5312555B2 (en) Multi X-ray generator

Legal Events

Date Code Title Description
MM4K Annulment or lapse of a utility model due to non-payment of fees