TWM284073U - High brightness LED and its die attach structure - Google Patents

Description

M284073 4. Creation Instructions (υ [Technical Field of New Type] This creation relates to the structure of a high-brightness light-emitting diode, especially to a high-quality finished using a wafer bond process. Bright light-emitting diode and its bonding structure. [Previous technology] In recent years, with the advancement of epitaxy technology, the growth of high-quality double heterostructure or quantum well structure LEDs has reached 99% internal quantum efficiency. The materials of red and yellow visible light LEDs are still mainly A 1 G a I η P materials, and their lattice constants are almost matched with GaA s substrates, but the energy gap of G a A s substrates is lower than that of these A 1 GalnP materials. Gap, and the light emitted by the LED is an isotropic light source, almost half of the light will enter the GaA s substrate and be absorbed. In addition, the light will be absorbed by the material itself if there is no proper current distribution in the structure. It is important that light is transmitted from a semiconductor with a high refractive index to air with a low refractive index (; [). Most of it is totally reflected. These factors have greatly reduced the external quantum efficiency of the LED, even as low as a few percentages. . Therefore, a wafer bonding technology was derived. 'See US Patent No. 5 3 7 5 8 0, which uses gallium arsenide as a stupid substrate for stupid crystals, and a light-emitting diode structure. After being grown, the light-emitting diode structure is adhered to a transparent substrate, and then the GaAs * plate is removed to solve the problem of light absorption of the substrate. Later, the GaN LEDs of the blue light series used different physical characteristics of the bonded substrate (such as thermal conductivity Rate, etc.) to improve the luminous efficiency and other characteristics of LEd. However, as far as the above methods are concerned, no matter whether the epitaxial substrate is removed by chemical mechanical polishing, etching, or laser method,

$ 5 pages M284073 Fourth, creation instructions (2) Stress will lead to low yield of components, and serious failure of components, resulting in waste of process costs, so how to develop a method that can provide sufficient adhesive strength and can improve The bonded structure of the polar body's luminous efficiency, in order to obtain a high-brightness, simple process and market-competitive light-emitting diodes, has become an issue that engineers want to solve. Therefore, in order to solve the above problems, the author proposes a high-brightness light-emitting diode and its bonding structure. [New content] The main purpose of this creation is to provide a bonding structure for bonding a growing LED light-emitting element area to a bonded substrate structure. The bonding structure has outstanding adhesion and can resist removal The stress generated by the crystal substrate, the contact resistance between the bonding layer and the LED light-emitting element region are low, and the light-emitting efficiency of the LED light-emitting element region can be improved. Another purpose of this creation is to provide a high-brightness light-emitting diode and its bonding structure, which can effectively strengthen the adhesion strength between the LED light-emitting element area and the bonded substrate structure, so that the wafer made by wafer bonding technology can be used. The yield of the high-brightness light-emitting diode is improved, the process cost is reduced, and at the same time the light-emitting efficiency of the light-emitting diode is improved. Another purpose of this creation is to provide an outstanding adhesive force capable of forming strong enough adhesion to the bonding structure, and effectively resisting the stress generated when the epitaxial substrate is removed, compared with the ability to form with the LED light-emitting element area. Low-resistance bonded substrate structure. In order to achieve the above purpose, this creation is a high-brightness light-emitting diode, which includes a bonded substrate structure, which includes a bonded substrate, and a low contact current.

Page 6 M284073 Fourth, creation instructions (3) a barrier layer, a barrier layer and an adhesive layer; a light-emitting element region; a bonding structure for bonding the bonded substrate structure and the light-emitting element region together, which includes an adhesive Layer, a barrier layer, a highly reflective layer, and a low contact resistance layer; and two electrodes at appropriate locations. This creation further provides a bonding structure for bonding a light emitting element region formed on an epitaxial substrate to a bonded substrate structure, which includes an adhesive layer for bonding with the bonded substrate structure; A barrier layer on the adhesive layer; a highly reflective layer on the barrier layer; and a low contact resistance layer on the highly reflective layer and bonded to the light emitting element region. In order to make your reviewing members have a better understanding and understanding of the structural features and effects achieved by this creation, I would like to accompany it with the preferred embodiment diagrams and detailed descriptions, as explained below: [Implementation Mode] This creation is a kind of High-brightness light-emitting diode and its bonding structure made by applying wafer bonding technology. First of all, it is clarified here that the so-called wafer bonding technology is a method in which an LED light-emitting element region is first deposited on a stupid substrate that matches the lattice of the light-emitting element region, and then, a light-emitting element region is formed on the LED light-emitting element region. The light-emitting element region is bonded to the bonded substrate structure to be used, and then the :: D light-emitting element region is bonded to the bonded substrate structure, and then the epitaxial substrate is removed to avoid the epitaxial substrate from LED. ^ A manufacturing method of the shortcomings of the light wave absorption generated by the light element area, and increasing the overall heat dissipation capability of the LED, so as to improve the luminous efficiency of the light emitting diode. This wafer bonding technology is a known method, and this creation is based on this wafer bonding technology.

M284073 IV. Creative Instructions (4) Resists the stress caused by the removal of the epitaxial substrate, and can improve the luminous efficiency of the light-emitting diode. It also has a bonding structure with good deposition quality and the corresponding bonding structure. The bonded substrate structure and a new high-brightness light-emitting diode structure produced by the use of the bonded structure, so those skilled in the art should be familiar with the material of the epitaxial substrate, the material, structure of the LED light-emitting element area, and the bonded substrate. The transformation of the material and the bonded substrate and the cleaning process of the light-emitting element area before the deposition structure is still within the scope of this creation. Please refer to the first figure, which is a schematic diagram of the bonding structure of this creation. Structure 1 includes an adhesive layer 12 for attaching to the adhesive substrate structure to be connected, and the material can be selected from gold (Au), gold germanium (AuGe), and gold tin (AuSn), and the adhesive layer 12 The selected material has the function of preventing oxidation; a barrier layer 14 on the adhesive layer 12 can be selected from titanium (Ti), nickel (Ni), palladium (Pd), rhodium (Rh), and platinum ( Pt), group (Ta) or gold beryllium AuBe);-a highly reflective layer 16 on the barrier layer 14, the material of the highly reflective layer 16 may be selected from copper-silver alloy (Cu A g), aluminum (Al), silver (Ag), rhodium (Rh); -A low contact resistance layer 18 on the high reflection layer 16 and the other side of which will be attached to a light emitting element region, whose material may be titanium (Ti), nickel (Ni), palladium (Pd), rhodium (Rh ), Platinum Pt), Syria (Ta), or gold beryllium (AuBe). Wherein, each layer of the above-mentioned bonding structure is formed by a method such as thermal evaporation, electron snap evaporation, or ion sputtering. Then, please refer to the second figure, which is a schematic diagram of the structure of the bonded substrate corresponding to the above-mentioned bonding structure in order to obtain the best bonding effect.

Page 8 M284073 IV. Creation instructions (5) The bonded substrate structure 2 includes a bonded substrate 22, which can be selected from silicon substrate, aluminum nitride substrate, silicon carbide substrate, diamond substrate and other substrates according to the material. The substrate material can be further divided into two types: conductive and insulating materials; a low contact resistance layer 2 4 for bonding to the bonded substrate 2 2 to be attached, and the material can be titanium (Ti), nickel (Ni) , Palladium (Pd), rhodium (Rh), platinum (Pt), group (Ta) or gold beryllium (AuBe);-the barrier layer 26 on the low contact resistance layer 24, the material of which can be selected from titanium (T i), nickel (Ni), palladium (Pd), rhodium (Rh), platinum (Pt), tantalum (Ta), or gold beryllium (AuBe); an adhesive layer 28 on the barrier layer 26, the material of which can be It is selected from gold (Au), gold germanium (AuGe), and gold tin (AuSn). Then, please refer to the third figure, which is a schematic diagram of an embodiment in which the bonding structure of the present invention is applied to a high-brightness light-emitting diode, which includes a bonded substrate structure 2, wherein the bonded substrate in this embodiment The material of the bonding substrate 22 of the structure 2 is a conductive material; a bonding structure 1 located on the bonding layer 28 of the bonding substrate structure 2 is a bonding layer 1 2 and a barrier layer 1 4. A high reflection layer 16 and a low contact resistance layer 18; the low contact resistance layer 18 has an LED light emitting element region 3 on the other side, and the structure of the LED light emitting element region 3 can be any conventional p / n connection Surface, or an n / p junction light-emitting structure, and the material can be selected from a gallium nitride compound; and two electrodes 4, 4 located at appropriate positions, and the positions of the two electrodes 4, 4 are not particularly limited It can be completed with reference to the currently used or developing light-emitting diode structure and technology, and there is no particular limitation, as long as it can provide a sufficient potential difference in the LED light-emitting element area. Then, please refer to the fourth figure, which applies the fitting structure of this creation

M284073 4. Creation instructions (6) Example of a high-brightness light-emitting diode in the case where the bonded substrate material 2 2 is an insulating material, which includes a bonded substrate structure 2; —adhesive layer 2 8 on the bonded substrate structure 2 8 The low-resistance layer 1 has an adhesive layer 12, a barrier layer 14, a highly reflective layer 16, and a low-contact resistance layer 18 on the other side of the low-resistance layer 18. LE D light emitting element region 3, and the structure of the LED light emitting element region 3 can be any conventional p / n junction or η / p junction light emitting structure, and the material can be selected from gallium nitride compounds; and The positions of the two electrodes 4, 4 'in an appropriate position, of course, there are no particular restrictions on the positions of the two electrodes 4, 4', which can be completed with reference to the currently used or developing sound-emitting diode structure and technology. It is only necessary to provide a sufficient potential difference in the LED light emitting element region. The bonding structure of this creation is based on material matching, reflectivity, electrical properties, and adhesion requirements. It is layered in different materials and includes an adhesion layer, a barrier layer, a high reflection layer, and a low contact resistance layer. In order to make the bonded structure have 1. Outstanding adhesive force, can form a strong enough adhesion with the bonded substrate structure, so that the LED light emitting element area can be fixed on the bonded substrate structure 'and effectively resist the removal of stupid crystals The stress generated on the substrate, 2. It can form a lower resistance with the LED light emitting element area, 3. It has high reflectivity, and can improve the light emitting efficiency of the LED light emitting element area. In addition, the adhesive substrate structure of this creation is based on the choice of material matching, electrical and adhesion requirements of the adhesive substrate and the bonded structure. It is stacked in different materials, and includes an adhesive layer, a barrier layer, and a low The contact resistance layer and a conductive adhesive substrate, so that the adhesive substrate structure can have 1. outstanding adhesion, and can form a sufficiently strong adhesion with the adhesive structure

Page 10 M284073 4. Creation Instructions (7), and can effectively resist the stress generated when the stupid substrate is removed, 2. It can form a lower resistance with the LED light emitting element area. In summary, the bonding structure of this creation has the characteristics of pasting the light-emitting element region formed on an epitaxial substrate to a bonded substrate structure after low temperature and short-time heat treatment, and has sufficient mechanical strength to resist subsequent The epitaxial substrate that absorbs light is removed, and the performance of improving the luminous efficiency of the light-emitting element region is provided, thereby providing a simple, low-cost and ultra-high-brightness light-emitting diode structure. The above is only a preferred embodiment of this creation, and the user does not limit the scope of implementation of this creation. Therefore, for example, all changes and modifications based on the shapes, structures, features, and spirits described in the scope of the patent application for this creation, All should be included in the scope of patent application for this creation.

Page 11 M284073 Schematic description [Schematic description] The first diagram is a schematic diagram of the bonding structure of this creation. The second figure is a schematic diagram of the bonded substrate structure of this creation. The third picture is a schematic diagram of the structure of a light-emitting diode, one of the works. The fourth picture is a schematic diagram of another light-emitting diode structure of this creation. [Description of main component symbols] 1 Adhesive structure 1 2 Adhesive layer 1 4 Barrier layer 16 High reflection layer 1 8 Low contact resistance layer 2 Adhesive substrate structure 2 2 Adhesive substrate 2 4 Low contact resistance layer 2 6 Barrier layer 2 8 Adhesive layer 3 Light emitting element area 4, 4 'electrode

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Claims (1)

M284073 _Case No. 94207929_ Modification of Year of the Month _ V. Application for Patent Scope 7 · The high-brightness light-emitting diode described in the first item of the scope of patent application, where the structure of the light-emitting element region can be any traditional ρ / η The interface, or the light emitting structure of the η / ρ interface. 8 · The high-brightness light-emitting diode according to item 1 of the scope of the patent application, wherein the adhesive layer is formed by a thermal evaporation method, an electronic snap deposition method, or an ion sputtering method. 9 · The high-brightness light-emitting diode according to item 1 of the scope of the patent application, wherein the barrier layer is formed by thermal evaporation, electronic snap evaporation, or ion sputtering. 10. The high-brightness light-emitting diode according to item 1 of the scope of the patent application, wherein the high-reflective layer is formed by thermal evaporation, electron gun evaporation, or ion sputtering. ] 1. The high-brightness light-emitting diode according to item 1 of the scope of the patent application, wherein the low contact resistance layer is formed by thermal evaporation, electron gun evaporation, or ion sputtering. 1 2 · A bonding structure for bonding a light-emitting element region formed on an epitaxial substrate to a bonded substrate structure, the bonding structure includes: an adhesive layer, which is used for Bonded to the bonded substrate structure; a barrier layer on the adhesive layer; a highly reflective layer on the barrier layer; and a low contact resistance layer on the highly reflective layer and The light emitting element regions are joined. 1 3 · The bonding structure described in item 12 of the scope of patent application, wherein the adhesion Page 14 M284073 Case No. 94207929_Year_Month_Revision 5: The material range of the patent application layer is platinum, gold germanium, gold tin. 14 • As shown in the patent claim No. 12, the bonding structure? The material of the barrier layer is selected. White titanium, nickel-palladium-rhenium (Rh) Λ platinum tantalum or gold beryllium 〇15 • Laminated structure as described in item 12 of the patent scope, where the material of the reflective layer can be selected from white copper silver alloy aluminum silver bond 〇16 • For example, the bonding structure described in item 12 of the patent scope, wherein the material of the low contact resistance layer may be titanium (Ti), nickel (Ni), palladium (Pd), Λ, rhodium (Rh), M (Pt), or tantalum (Ta). Or gold beryllium (AuBe) 〇17 • The bonding structure as described in item 12 of the patent scope, wherein the adhesive layer is formed by thermal evaporation, electronic snap deposition or ion sputtering, etc. 18 Patent Scope Item 12 Laminated structure, where the barrier layer is formed by means of thermal evaporation, electronic snap evaporation, or ion sputtering. 19 • Laminated structure as described in item 12 of the patent scope, where the reflective layer is made of heat Formed by vapor deposition, electron gun evaporation, or ion sputtering. 20 • The bonding structure described in item 12 of the patent application, wherein the low contact resistance layer is made by thermal evaporation, electronic snap evaporation, or ion sputtering. 〇21 Formed by other methods • The bonding structure described in item 12 of the patent scope > wherein the bonded substrate structure includes: Adhesive layer 1 which is used for bonding with the bonded structure, page 15 M284073 Case No. 94207929_Year_Year_ Amendment V. Patent application scope-a barrier layer is located under the adhesive layer; and The contact resistance layer is located under the barrier layer and is bonded to a bonding substrate. 22 · The bonding structure described in item 21 of the patent application, wherein the material of the bonding layer is platinum, gold germanium gold tin. 23 · The bonding structure described in item 21 of the patent application) Where the material of the barrier layer is selected from titanium, nickel-palladium-rhodium (Rh), starting tantalum or gold beryllium. 24 · As the item of patent application 21 The bonded structure described above, wherein the material of the low contact resistance layer is selected from the group consisting of titanium (Ti), nickel (Ni), palladium (Pd), (Rh), primary (Pt), tantalum (Ta), or gold beryllium (AuBe) 〇25 · For example, the bonding structure described in item 21 of the patent scope, where the bonding substrate is a conductive substrate such as a white optional silicon conductive silicon substrate, a conductive diamond substrate, or a white insulating silicon substrate, and a nitride substrate Insulating substrates, such as silicon carbide substrates, etc. 26. The bonding structure as described in item 21 of the patent application, 5 where the adhesive layer is formed by thermal evaporation, electronic snap deposition, or ion sputtering. 27 The bonding structure described in item 21 of the Chinese patent application 9 wherein the barrier layer is formed by thermal evaporation, electronic snap deposition or ion sputtering, etc. 28. The application described in the item 21 of Chinese patent application Structure 9 wherein the low contact resistance layer is formed by thermal vapor deposition, electron deposition, or ion sputtering. Page 16 M284073 Page 17