TWM272088U - Gas concentration detection device - Google Patents

Gas concentration detection device Download PDF

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Publication number
TWM272088U
TWM272088U TW94200702U TW94200702U TWM272088U TW M272088 U TWM272088 U TW M272088U TW 94200702 U TW94200702 U TW 94200702U TW 94200702 U TW94200702 U TW 94200702U TW M272088 U TWM272088 U TW M272088U
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Taiwan
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detection device
scope
gas
patent application
cavity
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TW94200702U
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Chinese (zh)
Inventor
Chi Tsau
Yung-Gang Tzang
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Radiant Innovation Inc
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Priority to TW94200702U priority Critical patent/TWM272088U/en
Publication of TWM272088U publication Critical patent/TWM272088U/en

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Description

M272088 四、創作說明(1) ^ 【新型所屬之技術領域】 本創作係有關一種氣體濃度偵測裝置,特別是有關一 種測量穩定率高的氣體濃度偵測裝置。 ΐί先前技術】 丨M272088 IV. Creation Instructions (1) ^ [Technical Field to which the New Type belongs] This creation relates to a gas concentration detection device, especially a gas concentration detection device with high measurement stability. ΐίPrevious technology】 丨

按,使用非發散性紅外線分析器分析氣體濃度(ηοη— | dispersive lnfrared,NDIR )係經常被使用的方法,而 丨 其原理係因不同氣體分子之間具有固定的振動能級,所以 2氣體分子接收到相對應振動能級之電磁波時,氣體分子 y將其該能量予以吸收,而其吸收量係與特定分子的存在| I成正比。所以紅外線分析係利用紅外光透過被測定氣 I 體,用以測定光強度變化,以進行辨認被測定氣體内之特· 定氣體濃度。 習知N DIR裝置結構,如第一圖所示,其係包括一腔體| 10,此腔體10之腔壁上鍍有一反射層12,此反射層12材質 •係為金、銀金屬或對於紅外線具有高反射率金屬其中之一 丨者’由腔體上通氣孔13通入待測氣體,而在腔體1〇的一端 |設置一紅外線發光源1 4,而腔體1 〇的另一端設置一感測器 • ’此感測器1 6另連接一信號檢出電路丨8,信號檢出電路 1 8儲存有待檢氣體之相關資料,接著當腔體丨〇内的待測定 氣體的濃度跟腔體外濃度平衡時,使紅外線發源丨4發射複 數光線20進入此腔體1〇内,經由反射層12反復反射及測定 氣體吸收’表後此光線2 〇由感測器1 6所接收,感測器1 6接 收光線2 0後輸出一訊號到信號檢出電路丨8内,由此信號檢According to the analysis of gas concentration (ηοη— | dispersive lnfrared, NDIR) using a non-divergent infrared analyzer is a commonly used method, and its principle is because different gas molecules have a fixed vibration energy level, so 2 gas molecules When an electromagnetic wave with a corresponding vibration level is received, the gas molecule y absorbs this energy, and its absorption is proportional to the presence of a specific molecule | I. Therefore, infrared analysis uses infrared light to pass through the body of the gas to be measured, and is used to measure the change in light intensity to identify the specific gas concentration in the gas to be measured. The structure of a conventional N DIR device, as shown in the first figure, includes a cavity | 10, and a reflective layer 12 is plated on the wall of the cavity 10, and the material of the reflective layer 12 is gold, silver or For infrared, one of the metals with high reflectivity is introduced into the gas to be measured through the vent 13 on the cavity, and an infrared light source 14 is provided at one end of the cavity 10, and the other of the cavity 1 A sensor is set at one end • 'This sensor 16 is also connected to a signal detection circuit 丨 8, the signal detection circuit 18 stores the relevant information of the gas to be detected, and then when the gas in the cavity When the concentration is in equilibrium with the external concentration of the cavity, the infrared source 4 emits a plurality of light rays 20 into the cavity 10, and is repeatedly reflected and measured by the reflection layer 12 to measure the gas absorption. After the table, the light rays 2 are received by the sensor 16 After the sensor 16 receives the light 20 and outputs a signal to the signal detection circuit 丨 8, the signal detection

第5頁 M272088Page 5 M272088

四、創作說明(2) IFourth, the creation instructions (2) I

出電路18計算出此測定氣體的濃度。 I 然而紅外感測器1 6接收到大角度入射的光線時,感測 器中濾波片的中心波長會有比較大的偏移,對於典型的紅1 外感測器而言,入射光線在大於20度入射角時,濾波片峰 值向短波長偏移約為40nm。如此變化係因為濾波片有一定 波帶寬度,造成會有一部分本不屬於待測氣體吸收的光線 得以進入感測器,而另一部分有關待測氣體濃度的光線被 攔戴在外,從而降低了信號強度,進而降低了量測之精 度。 _ 有鑒於此,本創作係針對上述之問題,提出一種精確 和穩定的氣體濃度偵測裝置,以有效解決上述問題。 【新型内容】 本創作之主要目的,係在提供一種氣體濃度偵測裝 置’能有效提南測疋之精度。 . 本創作之另一目的,係在提供一種氣體濃度偵測裝 置,藉由吸收層過濾部份角度的光線,使感測器能集中接 收範圍,進而提高測定準轉性。 • 根據本創作,一種氣體濃度偵測裝置,其係包括一腔 體,其内係注入一待測氣體,且此腔體内之腔壁上分別設 有一反射層及一吸收層;而在腔體一端且鄰近於反射層設 置一輻射光源,此輻射光源發射複數第一光線進入該^體 中,且第一光線經由此腔體之反射層反復反射及待测氣體 吸收而轉換形成一第二光線;而在腔體另一端上且鄰近於The output circuit 18 calculates the concentration of the measurement gas. I However, when the infrared sensor 16 receives a large angle of incident light, the center wavelength of the filter in the sensor will have a relatively large deviation. For a typical red 1 external sensor, the incident light is greater than 20 At the angle of incidence, the peak of the filter is shifted toward the short wavelength by about 40nm. This change is because the filter has a certain band width. As a result, part of the light that is not absorbed by the gas to be measured can enter the sensor, and another part of the light about the concentration of the gas to be measured is blocked, thereby reducing the signal. Strength, which reduces the accuracy of the measurement. _ In view of this, this creation aims at the above problems and proposes an accurate and stable gas concentration detection device to effectively solve the above problems. [New content] The main purpose of this creation is to provide a gas concentration detection device, which can effectively improve the accuracy of radon measurement. Another purpose of this creation is to provide a gas concentration detection device that filters the light at a part of the angle through the absorption layer, so that the sensor can focus on the receiving range, thereby improving the measurement accuracy. • According to this creation, a gas concentration detection device includes a cavity in which a gas to be measured is injected, and a reflection layer and an absorption layer are provided on the cavity wall in the cavity; A radiation light source is disposed at one end of the body and adjacent to the reflection layer. The radiation light source emits a plurality of first light rays into the body, and the first light rays are repeatedly reflected and reflected by the reflection layer of the cavity to form a second light. Light; and on the other end of the cavity and adjacent

_ 第6頁 M272088_ Page 6 M272088

jj 吸收層設置-感測元件,且此腔體内的吸收層可將對應於丨 感測元件,人射角大於—臨界角之該第二光線吸收或攔 住’而此感測元件則是接收入射角之角度介於〇度至臨界 角· f度的第二光線並輸出n而此感測元件再連接- 計算裝置,以接收此訊號並將其轉換為一光譜資料,而 算出待測氣體之濃度。 底下藉由具體實施例配合所附的圖式詳加說明,當更· 容易瞭解本創作之目的、技術内纟、特點及其所達成之功 效。 【實施方式】 一本創作係提出一種氣體濃度偵測裝置,如第二圖所 示,其係包括一腔體22,此腔體22上設有一通氣孔23,此 通氣孔23内設有-過渡片(圖中未示),此過濾片只允許特 定待測氣體通過;接著使外界氣體通入此通氣孔23,利用 •過濾片將外界氣體過濾,使特定的待測氣體進入此腔體U 内,且在腔體22内之腔壁上分別設有一反射層24及一吸收 層26,其中反射層24係利用電鍍方式設置,且此反射層2心 f材質係含金金屬、鎳金屬及其混合物其中之一者,而吸 收層26則係利用塗布方式設置,且此吸收層26之材料係為 黑色塗料;另外在腔體2 2 —端上且鄰近反射層24設置一輻 射光源28,其中輻射光源28係為紅外線光源,而此輻射光 ,28可為燈杯型式的光源,如此更可使光源效率增加,接 著使此輻射光源28發射複數第一光線進入腔體22中,經由The jj absorption layer is provided with a sensing element, and the absorption layer in the cavity can absorb or block the second light corresponding to the sensing element, the angle of incidence of the person is greater than the critical angle, and the sensing element is receiving The second ray with an angle of incidence ranging from 0 degrees to a critical angle f degrees and outputs n and this sensing element is connected again-a computing device to receive this signal and convert it into spectral data to calculate the gas to be measured Its concentration. The following detailed description with specific examples and accompanying drawings will make it easier to understand the purpose, technical details, features, and functions of this creation. [Embodiment] A creative department proposes a gas concentration detection device. As shown in the second figure, it includes a cavity 22, which is provided with a vent hole 23, and the vent hole 23 is provided with- A transition piece (not shown), this filter allows only specific gas to be tested to pass through; then the outside gas is allowed to pass through this vent hole 23, and the external gas is filtered with the filter to allow the specific gas to be measured to enter this cavity A reflecting layer 24 and an absorbing layer 26 are respectively provided on the wall of the cavity 22 in the U, and the reflecting layer 24 is provided by electroplating, and the material of the reflecting core 2 is made of gold or nickel. And one of its mixtures, and the absorption layer 26 is provided by a coating method, and the material of the absorption layer 26 is a black paint; in addition, a radiation light source 28 is provided on the end of the cavity 2 2 and adjacent to the reflection layer 24. The radiation light source 28 is an infrared light source, and the radiation light 28 may be a light cup type light source, which can increase the efficiency of the light source, and then the radiation light source 28 emits a plurality of first light rays into the cavity 22,

M272088 四、創作說明(4) 反射層2 4反復反射及待測氣體吸收而轉換形成一第二光 線,另在腔體2 2另一端上且鄰近吸收層2 6設置一感測元件 3Q,而感測元件3〇連接一計算裝置32 ;其中此腔體22内的 吸收層26可將入射角大於一臨界角之第二光線吸收,此臨 养角的角度係為20度,所以入射角介於〇至19度第二光線 則由此感測元件3 〇接收,感測元件3 0接收第二光線後輸出 一訊號至此計算裝置3 2内,由此計算裝置3 2計算得到待測 氣體之濃度。此外此感測元件30内更可增加一參考感測元 件(圖中未示),用以校正比對感測元件3 〇之精確度。 • 另外,吸收層2 6的設置方式也可利用喷砂方式設置,. 如第三圖所示,圖中係在靠近感測元件3 〇且在腔體2 2之腔 壁上,利用噴砂方式將腔體22之腔壁磨擦成粗糙狀,使第 二光線在此吸收層26上無法反射至感測元件30上,進而達 到將入射角介於20至90度之第二光線過濾移除。此外也可 利用設置栅攔方式代替吸收層2 6,請參閱第四圖所示,其 係利用在靠近感測元件3 〇且在腔體2 2之腔壁上環設一柵欄 34 ’此栅欄34設有一穿孔36,此穿孔36只允許入射角〇至 19度之第二光線通過,用以移除入射角3〇至9〇度之第二光 —此^體濃度偵測裝置在偵測時,如測量辦公室或者溫 至=一氧化碳之含量,將外界氣體注入通氣孔23内,使待 j氣體通過過濾片而進入此腔體22内,待穩定後使發光源 發射複數第一光線出去,每一第一光線在腔體22内經反 射層24反復反射並且由待測氣體吸收部分的能量,使第一M272088 IV. Creative instructions (4) The reflective layer 2 4 is repeatedly reflected and absorbed by the gas to be measured to convert to form a second light, and a sensing element 3Q is provided on the other end of the cavity 2 2 and adjacent to the absorption layer 26. The sensing element 30 is connected to a computing device 32. The absorbing layer 26 in the cavity 22 can absorb a second light having an incident angle greater than a critical angle. The angle of this angle is 20 degrees. The second light at 0 to 19 degrees is received by the sensing element 30. After receiving the second light, the sensing element 30 outputs a signal to the computing device 32, and the computing device 32 calculates the gas to be measured. concentration. In addition, a reference sensing element (not shown) can be added to the sensing element 30 to correct the accuracy of the comparison sensing element 30. • In addition, the setting method of the absorption layer 26 can also be set by sandblasting. As shown in the third figure, the figure is near the sensing element 30 and on the wall of the cavity 22 using the sandblasting method. The cavity wall of the cavity 22 is rubbed into a rough shape, so that the second light cannot be reflected on the absorbing element 26 to the sensing element 30, so as to filter and remove the second light with an incident angle between 20 and 90 degrees. In addition, a barrier method can be used instead of the absorption layer 26. Please refer to the fourth figure, which uses a fence 34 near the sensing element 30 and a ring wall on the cavity wall 2 'This fence 34 is provided with a perforation 36. This perforation 36 allows only the second light with an incident angle of 0 to 19 degrees to pass through to remove the second light with an incident angle of 30 to 90 degrees. This body concentration detection device is detecting At the time, such as measuring office or warm to = carbon monoxide content, inject outside air into the vent hole 23, so that the gas to be j through the filter into the cavity 22, after stabilization, the light source emits the first plurality of light out, Each first light is repeatedly reflected in the cavity 22 by the reflective layer 24 and absorbed by part of the energy of the gas to be measured, making the first light

M272088 四、創作說明(5) 光線轉變成第二光線,再經由吸收層26過濾移除入射角2〇 至9 0度之第二光線,使感測元件3 〇能集中區域接收第二光 線。 一 所以本創作藉由在腔體22内設置吸收層26,使感測元 #30能集中區域接收第二光線,進而使感測元件3〇能提高 測定之穩定率及準確性。 准以上所述之實施例僅為本創作之較佳實施例,藉由 f,例说明本創作之特點,其目的在使熟習該技術者能暸 =本創作之内容並據以實施,並非用以局限本創作實施之 =二舉凡運用本創作申請專利範圍所述之構造、形狀、 精神所為之均等變化及修飾,皆應包括於本創作申 靖專利之範圍内。 ❿M272088 4. Creation instructions (5) The light is converted into a second light, and the second light with an incident angle of 20 to 90 degrees is removed by filtering through the absorption layer 26, so that the sensing element 30 can receive the second light in the concentrated area. Firstly, by absorbing layer 26 in cavity 22, in this creation, the sensing element # 30 can receive the second light in a concentrated area, so that the sensing element 30 can improve the stability and accuracy of the measurement. The above-mentioned embodiment is only a preferred embodiment of this creation. By f, the characteristics of this creation will be described as an example. The purpose is to enable those skilled in the art to use the content of this creation and implement it accordingly. Limiting the implementation of this creation = two measures Any application of the same changes and modifications to the structure, shape, and spirit described in the scope of the patent application for this creation shall be included in the scope of this creation patent application. ❿

第9頁 M272088 圖式簡單說明 【圖式簡單說明】 第一圖為習知技術剖面示意圖。 第二圖為本創作剖面示意圖。 第三圖為本創作喷砂形式吸收層之剖面示意圖。 第四圖為本創作栅欄形式吸收層之剖面示意圖。 【主要元件符號說明】Page 9 M272088 Simple illustration of the drawing [Simplified illustration of the drawing] The first figure is a schematic diagram of a conventional technical section. The second picture is a schematic diagram of the creative section. The third figure is a schematic cross-sectional view of the sandblasted absorption layer. The fourth figure is a schematic cross-sectional view of the absorbing layer in the form of a fence. [Description of main component symbols]

第10頁 10 腔 體 12 反 射 層 13 通 氣 孔 14 紅 外 線發 光 源 16 感 測 器 18 信 號檢出 電 路 20 光 線 22 腔 體 23 通 氣 孔 24 反 射 層 26 吸 收 層 28 發 光 源 30 感 測 元件 32 計 算 裝置 34 柵 欄 36 穿 孔Page 10 10 Cavity 12 Reflective layer 13 Ventilation hole 14 Infrared light source 16 Sensor 18 Signal detection circuit 20 Light 22 Cavity 23 Ventilation hole 24 Reflective layer 26 Absorption layer 28 Luminous source 30 Sensing element 32 Computing device 34 Fence 36 perforated

Claims (1)

M272088 五、申請專利範圍 1、 一種氣體濃度偵測裝置,包括: 一腔體,其内係注入一待測氣體,且該腔體内之腔壁 上分別設有一反射層及一吸收層; 一輻射光源,其係設置在該腔體一端且鄰近於該反射 層,用以發射複數第一光線進入該腔體中,且該第一光線 經由該腔體之該反射層反復反射及該待測氣體吸收而轉換 形成一第二光線; 一感測元件,其係設置在該腔體另一端上且鄰近於該 吸收層,該吸收層可將對應於該感測元件之入射角大於一 _界角之該第二光線吸收,而該感測元件接收入射角介於 0度至該臨界角角度之該第二光線並輸出一訊號;以及 一計算裝置,連接至該感測元件,以接收該訊號並將 其轉換為一光譜資料,而計算出该待測氣體之》辰度。 2、如申請專利範圍第1項所述之氣體濃度债測裝置’其 中,該吸收層係為一黑色塗料。 3、如申請專利蘇圖楚1适戶斤述之氣體》辰度读測裝置其 令,該吸收層係為:攔,該柵攔設有-穿孔,用以使入 射角0至19度之該第二光線通過。 ^、如申請專利範圍第1項所述之氣體派度偵測裝置,其 中,該吸收層係利用塗布方式設置。 5、 如申請專利範圍第1項所述之氣體派度偵測裝置,其 中,該吸收層係利用喷砂方式設置。 6、 如申請專利範圍第丨項所述之氣體濃度偵測裝置,其 中,該輻射光源係為紅外線光源。M272088 V. Application for Patent Scope 1. A gas concentration detection device comprising: a cavity in which a gas to be measured is injected, and a reflection layer and an absorption layer on the cavity wall in the cavity; A radiation light source is disposed at one end of the cavity and adjacent to the reflective layer, and is used to emit a plurality of first light rays into the cavity, and the first light is repeatedly reflected by the reflective layer of the cavity and the measurement is performed. The gas absorbs and transforms to form a second light; a sensing element is disposed on the other end of the cavity and is adjacent to the absorbing layer, and the absorbing layer can make the incident angle corresponding to the sensing element larger than a boundary The second light is absorbed by the angle, and the sensing element receives the second light with an incident angle between 0 degrees and the critical angle angle and outputs a signal; and a computing device connected to the sensing element to receive the The signal is converted into a spectral data, and the degree of the gas to be measured is calculated. 2. The gas concentration debt measuring device according to item 1 of the scope of the patent application, wherein the absorption layer is a black paint. 3. If you apply for a patent Su Tuchu 1 gas suitable for the customer, the order reading device, the absorption layer is: the barrier, the barrier is provided with -perforation, to make the incident angle of 0 to 19 degrees The second light passes. ^ As described in item 1 of the patent application scope, the gas system detection device, wherein the absorption layer is provided by a coating method. 5. The gas system detection device as described in item 1 of the scope of patent application, wherein the absorption layer is provided by sandblasting. 6. The gas concentration detection device as described in item 丨 of the patent application scope, wherein the radiation light source is an infrared light source. M272088 五、申請專利範圍 7、如申請專利範圍第1項所述之氣體濃度偵測裝置,其中 該臨界角係為2 0度。 8,、 如申請專利範圍第1項所述之氣體濃度偵測裝置,其 中,該腔體更設有至少有一通氣孔。 9 _、 如申請專利範圍第8項所述之氣體濃度偵測裝置,其 中,該通氣孔内更設有一過濾片,該過濾片只允許該待測 氣體通過。 10、 如申請專利範圍第1項所述之氣體濃度偵測裝置,其 中,該待測氣體係含二氧化碳、一氧化碳及其混合物其中 •t 一者。 11、 如申請專利範圍第1項所述之氣體濃度偵測裝置,其 中,該反射層係含金金屬、鎳金屬及其混合物其中之一 者。 12、 如申請專利範圍第1項所述之氣體濃度偵測裝置,其 中,該反射層係利用電鍍方式設置。 13、 如申請專利範圍第1項所述之氣體濃度偵測裝置,其 中,該感測元件内更包括一參考感測元件,用以校正比對 該感測元件之精確度。M272088 5. Scope of patent application 7. The gas concentration detection device as described in item 1 of the scope of patent application, wherein the critical angle is 20 degrees. 8. The gas concentration detection device as described in item 1 of the scope of patent application, wherein the cavity is further provided with at least one vent hole. 9 _. The gas concentration detection device as described in item 8 of the scope of the patent application, wherein a filter is provided in the vent hole, and the filter allows only the gas to be measured to pass. 10. The gas concentration detection device as described in item 1 of the scope of patent application, wherein the gas system to be measured contains carbon dioxide, carbon monoxide and mixtures thereof. 11. The gas concentration detection device according to item 1 of the scope of the patent application, wherein the reflective layer is one of gold metal, nickel metal, and a mixture thereof. 12. The gas concentration detection device according to item 1 of the scope of patent application, wherein the reflective layer is provided by electroplating. 13. The gas concentration detection device according to item 1 of the scope of patent application, wherein the sensing element further includes a reference sensing element for correcting the accuracy of the comparison of the sensing element. 第12頁Page 12
TW94200702U 2005-01-14 2005-01-14 Gas concentration detection device TWM272088U (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104568784A (en) * 2013-10-24 2015-04-29 日月光半导体制造股份有限公司 Sensing module and manufacturing method thereof
CN110553959A (en) * 2018-06-01 2019-12-10 南台学校财团法人南台科技大学 Optical gas micro-concentration detection device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104568784A (en) * 2013-10-24 2015-04-29 日月光半导体制造股份有限公司 Sensing module and manufacturing method thereof
CN104568784B (en) * 2013-10-24 2017-08-29 日月光半导体制造股份有限公司 Sensing module and its manufacture method
CN110553959A (en) * 2018-06-01 2019-12-10 南台学校财团法人南台科技大学 Optical gas micro-concentration detection device

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