M268355 捌、新型說明： 【新型所屬之技術領域】 本新型是有關於一種靶材裝置，特別是指一種裝設在 濺鍍設備中且能調整與被鍍物間之距離的可調式靶壯 5 置。 工巴衣 【先前技術】 半導體製程中使用的物理氣相沉積方法主要有「蒸鲈 」（evaporation)及「濺鍍」（sputtering)兩種。其中濺鍍方= 是指在真空的腔體中引進作為電漿的氬氣（Ar)’並^電極 〇 間施加電壓而產生輝光放電（glow discharge)，使電漿 (Plasma)中之陽離子受到磁場作用，而撞擊一塊作為陰ς 的靶材（target)，以利用離子轟擊（i〇n b〇mbardment)的動量 轉移，將靶材表面的原子撞擊出來’而這些原子會以氣體 分子的型式發射出來，到達所要沉積的被鍍物，例如玻璃 > 基板或晶圓上，再經過附著、吸附、表面遷徒、成核等過 程之後，在被鍍物上成長為薄膜。 如圖1所示，一種習知之濺鍍設備1包含：一容裝有 電漿之真空腔體11、一設在該腔體n中且被驅動而沿著 一輸送方向移動的載具12、複數固設在該腔體u上且位 ) 在載具12之一側上的靶材裝置13，及複數裝設在該載具 12上的被鍍物14。該腔體u之一側壁ηι上設有數量對 應靶材装置13的穿孔112。每一靶材裝置13具有一固接 在忒側壁111上的側板13丨、二間隔裝設在該側板1 3丨上 且由穿孔112延伸進入腔體n中的背板132、二分別裝設 M268355 在該月板13 2朝向被鐘物14之一側面上的革巴材13 3，及一 間隔設在該背板132上的電極板134。靶材裝置13在設計 上，亦能間隔交錯地位在載具12的兩側（圖未示於使用 日守，在该電極板134加上一陽極，並在該背板丨32加上一 5 10 15 陰極，以形成電場激發電漿來轟擊靶材133，使靶材133 表面的原子發射出來後，沉積到被鍍物14之表面形成一 鍍膜。 雖然，上述習知之濺鍍設備丨能在被鍍物丨4之表面 上鍍膜，然而，由於該背板132是直接固設在側板i3i上 ，且該側板131是固接在該側壁lu上，因此靶材133與 被鍍物14之間的距離固定，並無法調整，當被鍍物“需 要靶材133近距離地沉積鍍膜，例如在織布上鍍膜時，即 會因為靶材133與被鍍4勿14之間的距離較遠，而難以達 到較佳的錢錢效果，適用性不佳。 【新型内容】 口此本新型之目的，即在提供—種可調整與被鍵物 間之距離的可調式革巴材裝置。 於是，本新型可調式執材裝置，是裝設在-滅鍍設備 中，繼設備包含-界定出-真空容室之腔體，及一能 被驅動而沿著一輸送方向在該容室中移動前進的被鍍 物抓體八冑D又在-側上且垂直於該輸送方向地連通 該容室的穿孔’而該可調絲材裝置包括：—側板、一連 接件及把材單疋。该側板固接在該腔體上且對應密封 該穿孔。該連接件可拆換地組接在該側板上，且垂直於該 20 M268355 輸送方向地進入容室，並朝該被鍍物延伸。該革巴材單元裝 設在該連接件鄰近於該被鍍物之一侧上，並具有一鄰近於 該被鍵物的乾材，及一與乾材絕緣間隔的電極板，當乾材 與電極板分別連接相反電極，即能形成電場激發容室中之 5 一電漿轟擊靶材，令該靶材被撞擊而發射出氣體分子，沉 積在被鑛物上形成一鍍膜。 本新型之功效在於能藉由更換不同長度之連接件，即 能調整該靶材單元與該被鍍物間之距離，使得靶材能鄰近 於該被鍍物。 10 【實施方式】 有關本新型之前述及其他技術内容、特點與功效，在 以下配合參考圖式之一較佳實施例的詳細說明中，將可清 楚的明白。 如圖2所示，本新型可調式靶材裝置之較佳實施例， 15 是裝設在一濺鍍設備2中，該濺鍍設備2包含一界定出一 真空容室21之腔體22，及一能被驅動而沿著一輸送方向 在該容室21中移動前進的被鍍物23。該腔體22具有一平 行於該輸送方向的側壁221，及一貫穿該側壁221且連通 該容室21的穿孔222。該容室21能用於容裝電漿。當然 20 在設計上，亦能視製程需要而改變可調式靶材裝置裝設在 腔體22上的數量及位置，例如該腔體22可具有二平行地 分別位在輸送方向兩侧的侧壁221，且在兩側壁221上可 分別設有一穿孔222，當然，穿孔222亦能複數間隔地穿 設在側壁221上，甚至是間隔交錯地穿設在兩側壁221 M268355 。而該被鍍物23可 上，在此恕不再說明亦不在圖中表示 為一玻璃基板、晶圓或織布。 如圖3、圖4及圖5所示，該可調式乾材裝置包括： 一側板一3、—氣密單元4、—㈣單元5、三連接件6、— 冷部單元7 ’及一導氣單元8。 該側板3是固接在該側壁221上，且對應遮蓋密封該 穿孔222,並具有-貫穿連通該容室21的外孔3卜二内、 外地形成«接該㈣221側面周緣的圈形環槽A 及複數分別貫通設在兩環槽32之間的氣孔33。 ίο 15 該氣密單元4設在該側板3與側壁221上，並具有二 分別嵌設在該側板3之環槽32中的密封圈41，及複數分 別設在該側板3外且連接氣孔33的抽氣接頭42。組裝時， 兩密封圈41呈内外環狀設置，並鄰抵在該側壁221上， 且抽氣接頭42能連接一抽真空裝置（圖未示），用於將兩密 封圈41之間的氣體抽除，使得該側板3與腔體22之間形 成氣密狀態。 該靶材單兀5是設在容室21中且位在側板3與被鍍 物23之間’並具有一基座51、一絕緣體52、一背板53、 一磁鐵54、一隔板55、複數隔板夾551、一靶材56、複 數靶材夾561、一電極板57、複數〇形環58、複數絕緣套 筒591，及複數固接件59。該基座51略呈一開口朝向被 錢物23之U形塊體，並具有一平行於該側板3的平直壁 511、一自該平直壁511之周緣朝該被鍍物23延伸的圍繞 壁512,及三貫穿平直壁511且對應該外孔31的内孔513。 M268355 該絕緣體52為一不導電之絕緣板片，是平放在圍繞壁5i2 鄰近被鍍物23之一側上，且靠近中央的内側附近。該背 板53是對應疊設在該絕緣體52上。該磁鐵54是位在基 座51與背板53之間，且一側鄰抵於該背板幻，能用於: 場，加速電漿離子化，增加撞擊濺鍍效率。該隔板Η 是疊放在該背板53鄰近於該被鍍物23 背板53與隔板55之間界定出二左、右間隔:水道： 該等隔板夾551將該隔板55周緣框抵在該背板幻上。 10 15 卜上述靶材56是鄰靠在隔板55與隔板夾551之間。該 等乾材夾561金罪在隔板夾551上，且用於將乾材％框 抵在隔板55上。該電極板57是位在該圍繞壁512上，且 靠近外側附近，並與絕緣體52、背板53、隔板Η、隔板 夾⑸絲材夾561相間隔，亦即與相隔離。該 等〇形環58是分職設在絕緣體52與基座51及背板^ 之間，以及該隔板55與背板53之間，能用於保持組裝後 基座si料㈣封狀態m緣套筒591是穿插在基 座Η與絕緣體52上。部份固接件59分別將磁鐵μ鎖固 在該背板53上，部份固接件59分別穿入絕緣套筒591， 並鎖固衫板53上，以將基絕緣體52與背板53 組接在—起，部份固接件59分別將乾材ϋ隔板夹 55!與隔板55 一起鎖固在該背板”上，以將乾材％與隔 板55相疊固接在背板53上，而部份固接件59分別將電 極板57鎖固在該基座51上。 送方向地進入容室21， 該等連接件6分別垂直於該輪 20 M268355 且可拆換地組接在該側板3與基座51之間，用以將革巴材 單元5支撐組接在側板3上，每一連接件6具有一沿著垂 直於該輸送方向延伸且位在側板3與基座51之間的懸凸 管6卜二分別墊設在懸凸管61與側板3及基座η間的管 5 塾片62、二分別將該懸凸管61之二端抵定在側板3與基 座51上的夾抵環63、二分別嵌設在管墊片62與夾抵環 63之間的緊迫圈64，及複數分別將夾抵環63固接在該側 板3與基座51上的鎖固件65。用於使得懸凸管6丨與容室 21間形成氣密狀態。該懸凸管61界定出一連通該外孔3工 10 的内孔513的中孔611。當然，在設計上連接件6的數量 亦可為一個或二個，或三個以上之其他數量，具有將靶材 單元5支撐組接在側板3上即可，當然，外孔31及内孔 513的數量亦會隨之改變。 該冷卻單元7裝設在該靶材單元5上，並具有一固接 15 在該基座51與磁鐵54間的框架71、二架固在框架71上 且分別連接兩水道514之一端的入水接頭72、二分別連接 兩水道514之另-端的出水接頭73、二分別連接入水接頭 72與水道514的人水路轉接頭74，及二分別連接出水接 頭73與水道514的出水路轉接頭75。該等入水接頭72與 2〇 接頭73分別與穿入外孔31、中孔611與内孔513的 水官（圖未不）連接，使用時，將水液引入該入水接頭72中， 並由入水路轉接頭74進人水道514,而後再經由出水路轉 接j 75自出水接碩乃流出，能用於冷卻與磁鐵μ固接 之月板53及靶材56，讓磁鐵54不會受熱而能發揮正常的 M268355 功能。 該導氣單元8裝設在該㈣單元5中，用於將氣體例 如氬氣（Ar)引入該容室21中作為電漿，並具有二分別固接 5 10 15 20 在該基座51之圍繞壁512内側的入氣接頭81，及二分別 固接在該基座之圍繞壁512外側的出氣接頭82。該刀出、 入氣接頭82、81能經由貫穿的圍繞壁512，連通内孔Η] 與容室，使用時，氣體能由外孔31、中孔6ιι與内孔 513，經入氣接頭81通過基座51，並自出氣接頭u進入 該容室21中。 如圖2所示，於使用時，在該電極板57加上一陽極， 並在該背板53加上一陰極，以形成一電場，令該容室幻 中的氣體受到此電場作用被激發，而對該靶材兄進行離 子轟擊，將靶材56表面的原子以氣體分子的型式發射出 來，並沉積到該被鍍物23之表面上形成一鍍膜。 當被鍍物23需要近距離濺鍍沉積時，操控者即能藉 由更換不同長度之懸凸管6卜來調整錄材單元5與該^ 鍍物23之間的距離，讓靶材兄鄰近於被鍍物23，達到較 佳的賤錢效果。此外，本新型更配合連接件6的設計，而 將冷卻單元7及導氣單元8’由外通過連接件6連接至靶 由以上說明可知，本新型之可調式靶材裝置，是在該 側板3與材單元5之間，可拆換地組接該懸凸管6】，藉 由更換不同長度之懸凸f 61，即能調整㈣％與被鐘物 23間之距離，具以可調整的功能，用以配合製程需要，因 10 M268355 此，本新型不僅是前 惟以上所述者，僅為::創新，更可供產業上利用。 能以此限定本新型實施之：型之較佳實施例而已，當不 5 10 範圍及新型說明書内容::之圍=^^ 應仍屬本新型專利涵蓋之範圍内| U與修飾’皆 【圖式簡單說明】 y疋種自知之濺鍍設備的部份剖視示意圖；M268355 新型 Description of the new type: [Technical field to which the new type belongs] This new type relates to a target device, particularly an adjustable target device installed in a sputtering equipment and capable of adjusting the distance to the object to be plated. 5 Home. Gamba [Previous Technology] Physical vapor deposition methods used in semiconductor processes are mainly "evaporation" and "sputtering". Among them, the sputtering method = refers to the introduction of argon (Ar) 'as a plasma in the vacuum cavity and the application of a voltage between the electrodes 0 to generate a glow discharge, so that the cations in the plasma (Plasma) are exposed to A magnetic field impacts and strikes a target that serves as a veil to use the momentum transfer of ion bombardment (io nb0mbardment) to strike the atoms on the surface of the target ', and these atoms will be emitted as gas molecules After coming out, it reaches the object to be deposited, such as glass> substrate or wafer, and then grows into a thin film on the object after adhesion, adsorption, surface migration, nucleation and other processes. As shown in FIG. 1, a conventional sputtering equipment 1 includes a vacuum cavity 11 containing a plasma, a carrier 12 provided in the cavity n and driven to move in a conveying direction. A plurality of target devices 13 are fixedly positioned on the cavity u on one side of the carrier 12, and a plurality of plated objects 14 are mounted on the carrier 12. A number of perforations 112 corresponding to the target device 13 are provided on one side of the cavity u. Each target device 13 has a side plate 13 which is fixed on the side wall 111 and two back plates 132 and two which are installed on the side plate 1 3 丨 and extend from the perforation 112 into the cavity n. M268355 A leather material 13 3 on one side of the meniscus 13 2 facing the clock 14, and an electrode plate 134 disposed on the back plate 132 at intervals. The design of the target device 13 can also be staggered on both sides of the carrier 12 (not shown in the figure). Add an anode to the electrode plate 134 and a 5 to the back plate 32. 10 15 The cathode uses an electric field to excite the plasma to bombard the target 133, and after the atoms on the surface of the target 133 are emitted, they are deposited on the surface of the plated object 14 to form a coating film. The surface of the plated object 4 is coated. However, since the back plate 132 is directly fixed on the side plate i3i and the side plate 131 is fixed on the side wall lu, the target 133 and the plated object 14 The distance is fixed and cannot be adjusted. When the object to be plated "needs to deposit a coating film at a short distance from the target material 133, such as coating on a woven fabric, the distance between the target material 133 and the plated 4 or 14 is too long. It is difficult to achieve a better money effect and poor applicability. [New content] The purpose of this new model is to provide an adjustable leather material device that can adjust the distance to the key. Therefore, This new type of adjustable material holding device is installed in the plating equipment. The equipment includes a cavity defining a vacuum chamber, and an object to be plated, which can be driven to move forward in the chamber along a conveying direction, and is on the side and perpendicular to the conveying. The adjustable wire material device includes:-a side plate, a connecting piece and a handle. The side plate is fixed to the cavity and correspondingly seals the perforation. The connecting piece is detachable. The ground exchange assembly is connected to the side plate, and enters the storage room perpendicular to the 20 M268355 conveying direction and extends towards the plated material. The leather material unit is installed on the side of the connection member adjacent to one of the plated material And has a dry material adjacent to the keyed object, and an electrode plate insulated from the dry material. When the dry material and the electrode plate are connected to opposite electrodes, respectively, an electric field can be formed to stimulate the plasma in the chamber. The target material causes the target material to be impacted to emit gas molecules, which are deposited on the coated mineral to form a coating film. The effect of the new model is that the target unit and the plated material can be adjusted by changing connecting pieces of different lengths. The distance between objects, so that the target can be adjacent to the 10 [Embodiment] The foregoing and other technical contents, features, and effects of the present invention will be clearly understood in the following detailed description of a preferred embodiment with reference to the drawings. As shown in FIG. 2 In a preferred embodiment of the novel adjustable target device, 15 is installed in a sputtering device 2 which includes a cavity 22 defining a vacuum chamber 21, and a device capable of being driven. The to-be-plated object 23 moves forward in the receiving chamber 21 along a conveying direction. The cavity 22 has a side wall 221 parallel to the conveying direction, and a through hole 222 penetrating the side wall 221 and communicating with the receiving chamber 21. The chamber 21 can be used for containing plasma. Of course, in design, the quantity and position of the adjustable target device installed on the cavity 22 can also be changed according to the needs of the process. For example, the cavity 22 may have Two side walls 221 located on both sides of the conveying direction in parallel, and a perforation 222 may be provided on the two side walls 221. Of course, the perforations 222 can also be provided on the side wall 221 in plural intervals, or even alternately. Located on two side walls 221 M268355. The to-be-plated object 23 can be mounted on it, which will not be described here and is not shown in the figure as a glass substrate, wafer or woven fabric. As shown in Fig. 3, Fig. 4 and Fig. 5, the adjustable dry material device includes: a side plate 3, an airtight unit 4, a cymbal unit 5, three connecting pieces 6, a cold section unit 7 'and a guide气 单元 8。 Gas unit 8. The side plate 3 is fixed on the side wall 221, and covers and seals the perforation 222 correspondingly. The side plate 3 has an outer hole 3 through the communication chamber 21, and a ring-shaped ring groove connecting the peripheral edge of the side of the ㈣221 A and plural numbers respectively penetrate air holes 33 provided between the two ring grooves 32. ίο 15 The airtight unit 4 is provided on the side plate 3 and the side wall 221, and has two sealing rings 41 respectively embedded in the ring grooves 32 of the side plate 3, and a plurality of outside rings 31 are provided outside the side plate 3 and connected to the air holes 33.的 exhaust joint 42. When assembling, the two sealing rings 41 are arranged inside and outside in a ring shape, and abut on the side wall 221, and the suction joint 42 can be connected to a vacuum device (not shown in the figure) for gas between the two sealing rings 41 It is removed so that an air-tight state is formed between the side plate 3 and the cavity 22. The target unit 5 is located in the receiving chamber 21 and is located between the side plate 3 and the object to be plated 23 'and has a base 51, an insulator 52, a back plate 53, a magnet 54, and a partition 55. , A plurality of separator clips 551, a target material 56, a plurality of target material clips 561, an electrode plate 57, a plurality of o-rings 58, a plurality of insulating sleeves 591, and a plurality of fixed members 59. The base 51 is a U-shaped block with an opening facing the object 23, and has a flat wall 511 parallel to the side plate 3, and a portion extending from the periphery of the flat wall 511 toward the object 23 to be plated. The surrounding wall 512 and three inner holes 513 penetrating the straight wall 511 and corresponding to the outer holes 31. M268355 The insulator 52 is a non-conductive insulating plate, and is placed on one side of the surrounding wall 5i2 adjacent to the object 23 to be plated, and near the inner side near the center. The back plate 53 is correspondingly stacked on the insulator 52. The magnet 54 is located between the base 51 and the back plate 53 and is adjacent to the side of the back plate. The magnet 54 can be used for: field, accelerating plasma ionization, and increasing impact sputtering efficiency. The partition plate 叠 is stacked on the back plate 53 adjacent to the plated object 23 and defines two left and right spaces between the back plate 53 and the partition plate 55: water channel: the partition plates 551 surround the partition plate 55 The frame rests on the backplane magic. The target 56 is abutted between the partition 55 and the partition clamp 551. These dry material clips 561 are on the partition clip 551 and are used to frame the dry material% against the partition plate 55. The electrode plate 57 is located on the surrounding wall 512 and is close to the outer side, and is separated from the insulator 52, the back plate 53, the separator Η, and the separator wire clip 561, that is, is isolated from the phase. The O-rings 58 are separated between the insulator 52 and the base 51 and the back plate ^, and between the partition 55 and the back plate 53. They can be used to maintain the sealed state of the base after assembly m The edge sleeve 591 is inserted between the base Η and the insulator 52. Part of the fixing member 59 locks the magnet μ to the back plate 53 respectively, and part of the fixing member 59 penetrates into the insulating sleeve 591 and locks the shirt plate 53 to fix the base insulator 52 and the back plate 53 respectively. Assembling together, part of the fixing members 59 respectively lock the dry material ϋ partition plate 55! And the partition plate 55 to the back plate ", so that the dry material% and the partition plate 55 are stacked and fixed to each other. The back plate 53 and some of the fixing members 59 lock the electrode plate 57 to the base 51 respectively. The feeding member 21 enters the receiving chamber 21, and the connecting members 6 are respectively perpendicular to the wheel 20 and M268355. Assembled between the side plate 3 and the base 51 to support the Geba material unit 5 on the side plate 3, and each connecting member 6 has an extension extending perpendicular to the conveying direction and is located between the side plate 3 and The overhanging tube 6 between the base 51 and the tube 5 are placed between the overhanging tube 61 and the side plate 3 and the base 5 respectively. The cymbal 62 and the second end respectively abut the two ends of the overhanging tube 61 on the side plate. 3 and the clamping ring 63 on the base 51, two pressing rings 64 embedded between the pipe gasket 62 and the clamping ring 63, and a plurality of clamping rings 63 are fixed to the side plate 3 and the base, respectively 51 的 锁 固 65。 On the lock firmware 65. The cantilevered tube 6 丨 forms an airtight state with the container 21. The cantilevered tube 61 defines a middle hole 611 that communicates with the inner hole 513 of the outer hole 3 and 10. Of course, the connecting member 6 is designed. The number may be one or two, or three or more other numbers, and it is only necessary to have the target unit 5 support group connected to the side plate 3. Of course, the number of the outer holes 31 and the inner holes 513 will also change accordingly. The cooling unit 7 is installed on the target unit 5 and has a frame 71 fixedly connected between the base 51 and the magnet 54 and two frames fixed to the frame 71 and connected to one end of the two water channels 514 respectively. Inlet joints 72 and two are connected to the other end of the two water channels 514, respectively. Outlet joints 73, two are connected to the water inlet 72 and the water channel 514, respectively, and are connected to the water channel adapter 74, and two are connected to the water outlet 73 and the water channel 514 respectively Head 75. The water inlet joints 72 and 20 joints 73 are respectively connected to the water officer (not shown in the figure) penetrating into the outer hole 31, the middle hole 611 and the inner hole 513. When in use, water is introduced into the water inlet 72 , And enter the water channel 514 through the water inlet adapter 74, and then transfer to the water from the j 75 through the water outlet Shuo is an outflow, which can be used to cool the meniscus 53 and the target 56 fixedly connected to the magnet μ, so that the magnet 54 can perform the normal M268355 function without being heated. The air guiding unit 8 is installed in the cymbal unit 5, It is used to introduce a gas such as argon (Ar) into the chamber 21 as a plasma, and has two gas inlet joints 81 fixed on the inside of the surrounding wall 512 of the base 51, and two respectively fixed The gas outlet joint 82 is connected to the outer side of the surrounding wall 512 of the base. The knife-out and gas inlet joints 82 and 81 can communicate with the inner hole through the surrounding wall 512] and the chamber. When in use, gas can pass through the outer hole 31. The middle hole 6m and the inner hole 513 pass through the base 51 through the air inlet 81 and enter the chamber 21 from the air outlet u. As shown in FIG. 2, during use, an anode is added to the electrode plate 57 and a cathode is added to the back plate 53 to form an electric field, so that the gas in the chamber magic is excited by the electric field. Then, the target brother is subjected to ion bombardment, and the atoms on the surface of the target 56 are emitted as gas molecules, and are deposited on the surface of the object 23 to form a coating film. When the object to be plated 23 needs to be sputtered at a short distance, the operator can adjust the distance between the recording unit 5 and the plated object 23 by replacing the overhanging tubes 6 of different lengths, so that the target material can be adjacent. On the object to be plated 23, a better cheap effect is achieved. In addition, the new model is more compatible with the design of the connecting member 6, and the cooling unit 7 and the air guiding unit 8 'are connected to the target through the connecting member 6 from the outside. As can be seen from the above description, the adjustable target device of the new model is on the side plate. The cantilevered tube 6 can be detachably assembled between 3 and the material unit 5]. By replacing the cantilevered f 61 with a different length, the distance between ㈣% and the object 23 can be adjusted. Function to meet the needs of the process. Because of this 10 M268355, this new model is not only the one mentioned above, but only :: innovation, but also for industrial use. This can be used to limit the implementation of the new model: the preferred embodiment of the model, when not within the scope of 5 10 and the content of the new specification :: the range = ^ ^ should still be within the scope of the new patent | U and modification 'both [ Brief description of the drawings] y part of a self-knowledge sputtering apparatus, a sectional view;
立圖2疋本新型可調式靶材裝置之較佳實施例的剖視示 W圖’說明裝設在—⑽設備中的部份構造； 圖3是該較佳實施例之立體圖； 圖4是該較佳實施例之正視示意圖；及 圖5是沿圖4中之線V _V的一剖面圖。 11 M268355 【圖式之主要元件代表符號說明】 2 濺鍍設備 551 隔板炎 21 容室 56 靶材 22 腔體 561 革巴材夾 221 側壁 57 電極板 222 穿孔 58 Ο形環 23 被鍵物 59 固接件 3 側板 591 絕緣套筒 31 外孔 6 連接件 32 環槽 61 懸凸管 33 氣孔 611 中孔 4 氣密單元 62 管墊片 41 密封圈 63 爽抵ί哀 42 抽氣接頭 64 緊迫圈 5 靶材單元 65 鎖固件 51 基座 7 冷卻單元 511 平直壁 71 框架 512 圍繞壁 72 入水接頭 513 内孔 73 出水接頭 514 水道 74 入水路轉接頭 52 絕緣體 75 出水路轉接頭 53 背板 8 導氣單元 54 磁鐵 81 入氣接頭 55 隔板 82 出氣接頭Fig. 2 is a cross-sectional view of a preferred embodiment of the novel adjustable target device according to the present invention. Fig. 3 illustrates a part of the structure installed in the device; Fig. 3 is a perspective view of the preferred embodiment; and Fig. 4 is a perspective view of the preferred embodiment. A schematic front view of the preferred embodiment; and FIG. 5 is a cross-sectional view taken along line V_V in FIG. 11 M268355 [Description of the main symbols of the drawings] 2 Sputtering equipment 551 Partition inflammation 21 Container 56 Target 22 Cavity 561 Geba material clip 221 Side wall 57 Electrode plate 222 Perforation 58 O-ring 23 Keyed object 59 Fastener 3 Side plate 591 Insulation sleeve 31 Outer hole 6 Connector 32 Ring groove 61 Cantilevered tube 33 Air hole 611 Middle hole 4 Air-tight unit 62 Tube gasket 41 Seal ring 63 Exhaust joint 42 Exhaust joint 64 Tight ring 5 Target unit 65 Locking device 51 Base 7 Cooling unit 511 Flat wall 71 Frame 512 Surrounding wall 72 Water inlet 513 Inner hole 73 Water outlet 514 Water channel 74 Water inlet adapter 52 Insulator 75 Water outlet adapter 53 Back plate 8 Air guide unit 54 Magnet 81 Air inlet connector 55 Baffle 82 Air outlet connector