M256582 捌、新型說明： 【新型所屬之技術領域】 本創作係關於一種用於半導體設備之夾緊環，特別是關 於一種於晶圓製造過程中緊固基材邊緣之夾緊環。 【先前技術】 於晶圓製造過程中，需要在一基板上重複沈積金屬、介 屯層及半導體薄膜層，例如：在矽基材或坤化鎵基材上濺 鐘至屬層。一般沈積製程係在真空處理室内進行，常見 的有物理氣相沈積及化學氣相沈積兩種方式，可將絕緣及 非絕緣材料之膜層堆疊於基材表面。 圖1係一習知夾緊環之示意圖。該夾緊環10係一金屬環 狀物體，其内緣之接觸面14抵靠在基材12主動面 surface)的四周邊緣。在該夾緊環1〇之最内侧有一與接觸 面14相鄰接之唇部16，又一斜面17環抱於接觸面14之 外侧。在沈積製程之真空處理室内，該基材12之被動面 (passive surface)係被一可升降之支撐座18所固定或吸 附，而夾緊環ίο之接觸面14壓合在基材12邊緣，如圖2 所示。® 2係圖i沿著卜i剖面線之剖面示意圖。 由於接觸面14直接覆蓋在基材12之主動面，因此於沈 積製程中產生了一些問題。首先，該夾緊環1〇和基材 的表面同樣會承接沈積之物質，這些沈積物會在爽緊環^ 及基材12交界處形成橋接層，所以會導致基材i2黏著於 夾緊環。雖然斜面17以一斜度向外延伸，但因為其底 部過於接近基材12的圓周而使得橋接現象仍難避免。當沈M256582 新型 Description of the new type: [Technical field to which the new type belongs] This creation relates to a clamping ring used in semiconductor equipment, and particularly to a clamping ring used to fasten the edge of a substrate during wafer manufacturing. [Previous technology] During the wafer manufacturing process, metal, interlayer, and semiconductor thin film layers need to be repeatedly deposited on a substrate, for example, a silicon to gallium substrate is sputtered to a metal layer. The general deposition process is performed in a vacuum processing chamber. There are two common methods, physical vapor deposition and chemical vapor deposition, which can stack the film layers of insulating and non-insulating materials on the surface of the substrate. FIG. 1 is a schematic diagram of a conventional clamping ring. The clamping ring 10 is a metal ring-shaped object, and the contact surface 14 on the inner edge thereof abuts the peripheral edges of the active surface (surface of the substrate 12). A lip portion 16 adjacent to the contact surface 14 is provided on the innermost side of the clamping ring 10, and a further inclined surface 17 is embraced outside the contact surface 14. In the vacuum processing chamber of the Shenji process, the passive surface of the substrate 12 is fixed or adsorbed by a liftable support base 18, and the contact surface 14 of the clamping ring is pressed against the edge of the substrate 12, as shown in picture 2. ® 2 is a schematic cross-sectional view taken along the cross-section line. Since the contact surface 14 directly covers the active surface of the substrate 12, there are some problems in the deposition process. First of all, the clamping ring 10 and the surface of the substrate will also accept the deposited material. These deposits will form a bridging layer at the junction of the tight ring ^ and the substrate 12, so the substrate i2 will adhere to the clamping ring. . Although the inclined surface 17 extends outward at a slope, the bridging phenomenon is still unavoidable because the bottom portion is too close to the circumference of the substrate 12. Dang Shen
H:\HU\LGCU^耘科技\90529\90529.DOC M256582 知製程完成後，支撐座丨8會向下移動欲使基材12退出真 空處理室。但此時基材12的邊緣仍黏著在夾緊環上， 因而可能會拉扯而造成破片。其次，該夾緊環丨0遮蔽住基 材12主動面之邊緣部分，所以會減少基材ι2實際可利用 之面和’也就是晶圓邊緣會有更多面積或功能不完整之晶 粒。 知上所述’市場上亟需要一種既可以有效夾持基材但不 會相互黏著之夾緊環’另一方面還要能夠增加基材上實際 可利用之面積以產生較多之晶粒數。 【新型内容】 本創作之主要目的係提供一種用於半導體設備之夾緊 環，可在晶圓製造過程中有效夾持基材之邊緣，並減少因 夾持而無法形成電路之面積。 本創作係用於半導體設備之夾緊環，可在晶圓製造過程 中將基材之邊緣夾緊而固定。該夾緊環包含一環形主體， 環形主體之内緣有複數個第一斜面，該第一斜面之底部直 徑較佳地係最少大於該基材直徑4釐米。該夾緊環另有複 數個與該複數個第一斜面以齒狀交錯配置之第二斜面，該 第二斜面之底部直徑較佳地係最多大於該基材直徑丨釐 米。又有一接觸面與該第一斜面及第二斜面以鈍夹角相鄰 接，該接觸面恰可壓合在基材邊緣上方。另有一唇部係設 在該夾緊環之最内緣，且鄰接於非共平面之該接觸面，如 此該唇部與基材間仍有一空隙存在。 另外忒夾緊環之環形主體内緣可將一連續之斜錐面取代 H:\HU\LGC\ 瑞耘科技\90529\90529.〇〇〇 -6- M256582 上述齒狀之第一斜面及第二斜面，該斜錐面之底部直徑最 多大於該基材直徑丨釐米。又有至少三個接觸面與該斜錐 面以鈍夾角相鄰接，該接觸面恰可壓合在基材邊緣上方。 另有一唇部係設在該夾緊環之最内緣，且鄰接於非共平面 i孩接觸面及斜錐面，如此該唇部與基材間仍有一空隙存 在。 【實施方式】 圖3(a)係本創作夾緊環之第一較佳實施例之示意圖。該 夾緊環30包含一環形主體3卜環形主體31之内緣連接至 複數個第-斜面34。該第-斜面34之底部直徑較佳地係 大於該基材直徑4釐米，而複數個第二斜面35與該複數個 第一斜面34以齒狀交錯配置，且該第二斜面”之底部直 徑較佳地係最多大於該基材直徑丨釐米。一 第-斜…第二斜面35以純爽角相鄰接，該接觸面;; 恰可壓合在基材12邊緣上方’如圖3(b)所示。一唇部32 係設在财《30之最内緣’且鄰接於非共平面之雜觸 面33，如此該唇部32與基材12間仍有—空隙存在。 圖3(b)係fit 3⑷沿著2- 2剖面線之剖面示意圖。由此圖 可以清楚的觀察到只有該第二斜面35才緊鄰基材12的周 緣’因此橋接現象僅限在第二斜面35及⑽12交界處會 發生，也就是基材12側面黏片的問題將大幅改善。假設基 材12心直徑尺寸為八英叶（2〇〇_)，該第一斜面μ之底 部直徑建議採20().58随，相對第二斜面之底部直徑建議採 204.58顏。圖3⑷中之第二斜面35共設有八處，但實際 H:\HU\LGC\瑞耘科技\90529\90529.000 M256582 上取少需要三處設有第二斜面35，也就能夠使基材12達 到定位精確的效果。 圖4(a)係本創作夾緊環之第二較佳實施例之示意圖。該 爽緊環40包含一環形主體41，環形主體41之内緣有一連 續之斜錐面43取代前例齒狀排列之第一斜面34及第二斜 面35。該斜錐面43之底部直徑較佳地係最多大於該基材 直徑1繁米。該夾緊環4〇另有至少三個接觸面42與該斜 錐面43以鈍夾角相鄰接，該接觸面42恰可壓合在基材邊 緣上万。另有一唇部44係設在該夾緊環40之最内緣，且 鄰接於非共平面之該接觸面42及斜錐面43，如此該唇部 44與基材12間仍有一空隙存在，有助氣相（vap〇r)沈積 物質通過而使得薄膜之均勻性較佳。 圖4(b)係圖4(a)沿著3— 3剖面線之剖面示意圖，其中唇 邵44與接觸面42呈現階梯狀。又圖4(匀係圖《…之h部 分<放大示意圖，其中該斜錐面43之與水平面（或基材 12表面）夾角為80度較佳，其底部直徑建議採200.58mm。 馬基材12與該夾緊環4〇貼近時，該接觸面42恰可壓合在 基材12邊緣。 如圖4(d)所示，該接觸面42’係與水平面有一夾角關係而 非平行，又以4度為較佳之夾角值。斜錐面43,與唇部44, 仍可以保持圖（c)中相同之尺寸，而唇部44也可以如同接 觸面42,改為一斜面。 本創作之技術内容及技術特點巳揭 示浚口上，然而熟悉本 -、技術之人士仍可能基於本創作之教示及揭示而作種種不 麵U\LGC\瑞耘科技柳⑽松9 d〇c M256582 背離本創作精神之替換及修飾。因此，本創作之保護範圍 應不限於實施例所揭示者，而應包括各種不背離本創作之 替換及修飾，並為以下之申請專利範圍所涵蓋。 【圖式簡單說明】 圖1係一習知夾緊環之示意圖； 圖2係圖1沿著1 —丨剖面線之剖面示意圖·， 圖3(a)係本創作夾緊環之第一較佳實施例之示意圖； 圖3(b)係圖3(a)沿著2— 2剖面線之剖面示意圖； 圖4(a)係本創作夾緊環之第二較佳實施例之示意圖； 圖4(b)係圖4(a)沿著3 — 3剖面線之剖面示意圖； 圖4(c)係圖4(b)之Η部分之放大示意圖；及 圖4(d)係本創作夾緊環之非水平接觸面之放大示意圖。 【元件符號說明】 10 車輛 11 方向燈 10 夾緊環 12 基材 14 接觸面 16 唇部 30 夾緊環 31 環形主體 32 唇部 33 接觸面 34 第一斜面 35 第二斜面 40 夾緊環 41 環形主體 42 > 42’ 接觸面 43、 43’ 斜錐 44、 44’ 唇部 HAHUVLGC端耘科技\90529\90529.〇〇。 . 9 -H: \ HU \ LGCU ^ yun Technology \ 90529 \ 90529.DOC M256582 After the process is completed, the support base 8 will move downwards to make the substrate 12 exit the vacuum processing chamber. However, at this time, the edge of the substrate 12 is still adhered to the clamping ring, so it may be pulled and cause fragmentation. Secondly, the clamping ring 丨 0 covers the edge portion of the active surface of the substrate 12, so it will reduce the actual available surface of the substrate ι2, that is, the wafer edge will have more area or incomplete crystal grains. Knowing the above, 'the market urgently needs a clamping ring that can effectively hold the substrate but does not adhere to each other'. On the other hand, it is also necessary to increase the actual available area on the substrate to generate a larger number of grains. . [New content] The main purpose of this creation is to provide a clamping ring for semiconductor devices, which can effectively clamp the edge of the substrate during the wafer manufacturing process, and reduce the area where the circuit cannot be formed due to clamping. This creation is a clamping ring for semiconductor equipment, which can clamp and fix the edge of the substrate during the wafer manufacturing process. The clamping ring includes a ring-shaped body. The inner edge of the ring-shaped body has a plurality of first inclined surfaces. The diameter of the bottom of the first inclined surface is preferably at least 4 cm greater than the diameter of the substrate. The clamping ring additionally has a plurality of second inclined surfaces that are alternately arranged in a tooth shape with the plurality of first inclined surfaces. The diameter of the bottom of the second inclined surface is preferably at most greater than the diameter of the substrate. Another contact surface is adjacent to the first inclined surface and the second inclined surface at an obtuse angle, and the contact surface can be pressed just above the edge of the substrate. Another lip is located at the innermost edge of the clamping ring and is adjacent to the non-coplanar contact surface, so there is still a gap between the lip and the substrate. In addition, the inner edge of the ring body of the clamping ring can replace a continuous inclined cone surface H: \ HU \ LGC \ Ruiyun Technology \ 90529 \ 90529.〇〇〇-6- M256582 Two inclined surfaces, the diameter of the bottom of the inclined cone surface is at most larger than the diameter of the substrate 丨 cm. At least three contact surfaces are adjacent to the oblique cone surface at an obtuse angle, and the contact surfaces can be pressed just above the edge of the substrate. Another lip is located at the innermost edge of the clamping ring and is adjacent to the non-coplanar surface and the oblique cone surface, so there is still a gap between the lip and the substrate. [Embodiment] FIG. 3 (a) is a schematic diagram of a first preferred embodiment of the present clamping ring. The clamping ring 30 includes an annular body 3 and an inner edge of the annular body 31 connected to a plurality of first inclined surfaces 34. The bottom diameter of the first inclined surface 34 is preferably larger than the diameter of the substrate by 4 cm, and the plurality of second inclined surfaces 35 and the plurality of first inclined surfaces 34 are arranged in a staggered manner, and the diameter of the bottom of the second inclined surface is " It is preferably at most larger than the diameter of the substrate 丨 cm. A first-inclined ... second inclined surface 35 is adjacent to each other at a pure angle, and the contact surface is just pressed onto the edge of the substrate 12 'as shown in Fig. 3 (b ). A lip 32 is located at the innermost edge of the "30" and is adjacent to the non-coplanar miscellaneous contact surface 33, so there is still a gap between the lip 32 and the substrate 12. Figure 3 ( b) is a schematic cross-sectional view of fit 3⑷ along the 2-2 section line. From this figure, it can be clearly observed that only the second slope 35 is close to the periphery of the substrate 12 '. Therefore, the bridging phenomenon is limited to the second slope 35 and ⑽12. It will happen at the junction, that is, the problem of the sticking sheet on the side of the substrate 12 will be greatly improved. Assuming that the diameter of the substrate 12 is eight inches (200 mm), the diameter of the bottom of the first bevel μ is recommended to be 20 () .58 With, it is recommended to use 204.58 colors relative to the bottom diameter of the second slope. There are eight second slopes 35 in Figure 3, but the actual H: \ HU \ LGC \ Ruiyun Technology \ 90529 \ 90529.000 M256582 The second bevel 35 needs to be set at three places, so the substrate 12 can be accurately positioned. Figure 4 (a) is the creative folder Schematic diagram of the second preferred embodiment of the tightening ring. The refreshing ring 40 includes a ring-shaped body 41, and the inner edge of the ring-shaped body 41 has a continuous oblique tapered surface 43 instead of the first oblique surface 34 and the second oblique surface of the tooth arrangement of the previous example. 35. The diameter of the bottom of the inclined tapered surface 43 is preferably at most 1 meter larger than the diameter of the substrate. The clamping ring 40 has at least three contact surfaces 42 adjacent to the inclined tapered surface 43 at an obtuse angle. The contact surface 42 can be pressed on the edge of the substrate. Another lip 44 is provided on the innermost edge of the clamping ring 40 and is adjacent to the non-coplanar contact surface 42 and the oblique cone surface 43. In this way, there is still a gap between the lip 44 and the substrate 12, which can help the vapor deposition material pass through and make the film uniform. Figure 4 (b) is a view along Figure 4 (a). 3-4 is a schematic cross-sectional view of the section line, in which the lip shaw 44 and the contact surface 42 are shown in a step-like shape. The angle between the inclined tapered surface 43 and the horizontal plane (or the surface of the substrate 12) is preferably 80 degrees, and the bottom diameter thereof is recommended to be 200.58 mm. When the horse substrate 12 and the clamping ring 40 are close to each other, the contact surface 42 can be pressed together. At the edge of the substrate 12. As shown in FIG. 4 (d), the contact surface 42 'has an angle relationship with the horizontal plane instead of being parallel, and a preferred angle value is 4 degrees. The oblique cone surface 43, and the lip 44, The same size in the figure (c) can still be maintained, and the lip 44 can be changed to a bevel like the contact surface 42. The technical content and technical characteristics of this creation are revealed on Junkou, but those who are familiar with this technology are still May be based on the teachings and reveals of this creation. U \ LGC \ Ruiyun Technology Liu Yisong 9 doc c M256582 substitutions and modifications that depart from the spirit of this creation. Therefore, the scope of protection of this creation should not be limited to those disclosed in the embodiments, but should include various substitutions and modifications that do not depart from this creation, and are covered by the scope of patent applications below. [Schematic description] Figure 1 is a schematic diagram of a conventional clamping ring; Figure 2 is a cross-sectional schematic diagram of Figure 1 along the section line 1— 丨; Figure 3 (a) is the first comparison of the original clamping ring. Fig. 3 (b) is a schematic cross-sectional view of Fig. 3 (a) along the line 2-2; Fig. 4 (a) is a schematic view of the second preferred embodiment of the clamping ring; 4 (b) is a schematic cross-sectional view of FIG. 4 (a) along the 3-4 section line; FIG. 4 (c) is an enlarged schematic view of the Η part of FIG. 4 (b); and FIG. 4 (d) is the original clamp Enlarged schematic diagram of the non-horizontal contact surface of the ring. [Description of component symbols] 10 Vehicle 11 Turn light 10 Clamping ring 12 Base material 14 Contact surface 16 Lip 30 Clamping ring 31 Ring body 32 Lip 33 Contact surface 34 First bevel 35 Second bevel 40 Clamp ring 41 Ring Body 42 > 42 'contact surface 43, 43' oblique cone 44, 44 'lip HAHUVLGC end work technology \ 90529 \ 90529.〇〇. . 9 -