TWM255516U - Light-emitting diode - Google Patents

Description

M255516

[Technical field to which the new type belongs] / Creative Department-A kind of light-emitting diode, especially a single-chip, > structure where light diodes can emit light of different wavelengths in different regions on the same wafer. [Prior art] A light emitting diode (LED) is a small-sized solid-state light source with high luminous efficiency. Since the light-emitting diode is a semiconductor element, it has a long service life and high stability, and is suitable for various light sources such as display screen light sources, backlight light sources, traffic lights, emergency exit lights, lighting and other applications. " Due to various uses, the colors of the required light emitting diodes have also evolved from traditional red, green, and blue to various colors. Taking a white light source as an example, in the prior art, multiple wafer light emitting diodes are used as a light source, and three light emitting elements of red, green, and blue are arranged adjacent to each other, so that they emit light and diffuse color mixing, in order to achieve the purpose of white. The color of the light-emitting element is different from the hue and brightness, and it may be difficult to achieve the expected white light. In addition, when the light-emitting elements of individual colors are made of different materials, the driving voltages of the light-emitting elements are not the same, so a complicated design is required in the circuit. Since the temperature characteristics and life of each component are not the same, the color tone of the mixed light will also change with the environment. Therefore, it is not an ideal way for f to use individual red, green, and blue light emitting elements to generate white light. In the prior art, a blue light-emitting diode was used as a light source.

M255516 ^ ------- 4. Creation instructions (2) Add yellow fluorescent powder to the overmolded resin mold, and use blue light to excite the yellow fluorescent powder to produce yellow light. The yellow light is then combined with the blue light that is not absorbed. Mixed light becomes white light. Its structure is shown in Figure 1, which is US Pat. No. 5,989,925. It is a light-emitting diode 90, which includes a blue LED chip 92, which is arranged in a groove of a casing 94, and an encapsulant 9 1 containing a specific fluorescent powder is filled in the groove. And a pair of metal terminals 95 are connected to the n- and p-poles of the LED chip 92 by wires 9 3 respectively. The characteristic of this method is that the blue light absorbed by the phosphor emits yellow light, and the yellow light is mixed with the blue light not absorbed by this layer to form a two-wavelength white light. Although this method can effectively obtain the required white light, there will be yellowish or blueish color cast. At the same time, when adjusting different color tones, different formulas need to be changed to achieve different light mixing ratios. The desired hue; on the other hand, if more than two phosphors are needed to achieve the desired color, due to the different specific gravity and particle size of the two phosphors, white light emitting diodes can also be controlled during production Difficulties. Therefore, it can be seen from the above that the conventional light-emitting diodes, especially white light-emitting diodes, obviously have inconveniences and defects in actual manufacture and use, and need to be improved.于是 Therefore, the author feels that the above-mentioned shortcomings can be improved. He has devoted himself to research and cooperated with the application of theories. Finally, he has proposed a rational design and effective cover to the above-mentioned shortcomings. σ [new content] The main purpose of this creation is to provide a light-emitting diode, especially one

Page 7 M255516 IV. Creative Instructions (3) Light emitting diodes with a single chip can emit light of different wavelengths in different areas on the same chip. The second purpose of this creation is to provide a light-emitting diode. The light-emitting diode's Cui-Yi wafer emits light with different wavelengths, and can obtain the set hue after diffusion mixing. μ μ The third purpose of this creation is to provide a light-emitting diode. The single chip of the light-emitting diode :: can emit more than two different wavelengths <to increase color saturation. The fourth objective is to provide a light-emitting diode, which can be used to formulate light-emitting diodes of different colors when using the phase powder powder formula. The bipolar diode achieves the stated purpose. This creation provides a single-chip multi-wavelength light emission. An umbrella makes the early-chip LED emit multi-wavelength light. It is characterized in that: the light emitting layer of the device is composed of a nitride-based compound semiconductor and emits blue light with a wavelength of 40 0 ~ 53〇11111 at a forward voltage formed by the nitride-based compound semiconductor; 70 pieces of light are held at you A part of the surface of the surface is coated with a wavelength conversion layer. This blueprint &amp; conversion layer contains photoluminescent phosphors, which can absorb short wavelengths and emit longer wavelengths of light, such as green, yellow, or red. Light; when there are two 2-way currents 'the surface of the single-chip light-emitting diode can emit more than 箓 colors' including the area 3-light not covered by wavelength conversion and covered by the wavelength conversion layer The area is glowing yellow or turquoise or red. In the preferred embodiment, the light-emitting diode is fabricated using a flip-chip (blue chip) light-blocking diode diode. First apply a layer of light on the surface of the wafer ’Use a photomask to expose part of the area and then develop it. This step is complete

M255516 Fourth, after the creation instructions (4), there will be a part of the area on the wafer; the next step is to cover the area in the crystal trough by electrocoating, and then the light-emitting wavelength Polar body. By controlling the area of the photomask, the wavelength of the surface of the photodiode wafer is changed to color tone. In a preferred embodiment, selective dispensing is performed; firstly, a photo-dispensing machine is used for precise dispensing, the powder slurry is then baked, and then the light-emitting diode is glued. In a preferred embodiment, selective dispensing is performed; first, two types of light powder and a second type of fluorescent powder are prepared to absorb short-wavelength light; and a first type of fluorescent powder paste at the first point is used by a dispenser, However, the glue is cured on the part of the surface covered by the second powder using a dispensing machine to harden the glue, and a single wafer is controlled to control the area of the dispensing, and the wavelength of the surface of the photodiode wafer is converted to color tone. Cover the photoresist, while the other areas are exposed sheets that are placed in electrophoresis containing photoluminescence. The phosphor powder is coated without being washed away by the photoresist. You can get more than a single chip, and you can get the intended coverage accurately. The proportion of the exchange layer is changed to obtain the predetermined fluorescent powder and glue uniformly on the surface of the wafer with a dispenser, and then the surface of the wafer is spot-hardened with fluorescent light to complete the single-wafer multi-wavelength Use a dispenser to select light-emitting phosphor powder on the surface of the wafer. After the first wavelength, a longer type of fluorescent powder with a different wavelength will be emitted on a part of the surface of the wafer and baked to harden the glue. $ The light powder is not the first glory two phosphor powder paste on the wafer, and then it is used for multi-wavelength light emitting diodes. Then the proportion of the predetermined coverage on the exchange layer can be accurately obtained to obtain the predetermined

M255516 Creative Instructions (5) In order to make the above and obvious comprehension of this creation, the following special implementations are preferred: the matching and advantages can be more detailed. The detailed description is as follows, but these descriptions are only illustrated by J Tianhe. Details | The scope of rights of this creation is not limited. Let's create this book instead of [Embodiment] Please refer to the second and third figures, which are w: top view of the polar body-the preferred embodiment ;: crystal: to: cover the wavelength conversion layer structure ^ 丨1 2-Light-emitting diode lead frame 1 1, L L) Wafer 1 3 as a light-emitting element is connected to the lead 10 through a lead 15 丨 掐 g η &gt; «说 帝 # chen 朱 1 1 、 12 and a wavelength conversion layer 14 cover a part of the surface of the LED chip 丄 3 and form an uncovered portion 1 β. Among them, the outside of the light-emitting diode 丄 0 can be progressively opened>, there is a sealant 18; in this creation, the light-emitting layer of the light-emitting diode wafer 13 is composed of a nitride-based compound semiconductor, where the wavelength conversion The layer 14 contains photoluminescent phosphors, and can absorb short-wavelength blue light and emit longer-wavelength light, such as green, yellow, or red light; when a forward current is passed, the LED chip 1 The surface of 3 will have more than two colors 'including the area 1 6 that is not covered by the wavelength conversion layer 1 4 | blue light from the test', and the area covered by the wavelength conversion layer 1 4 emits yellow light or It is green or red, depending on the photoluminescent phosphor it contains, such as a garnet-based phosphor that is activated by tritium.

Page 10 M255516, creation instructions (6) This creation of blue light-emitting two photoresist, after use the wafer out of the wafer; in the lower tank, the wavelength conversion of the luminescence using the wavelength of the area covered ^ blue light plus uniform, in addition ( diff user ~ If you use a polar crystal mask, there will be a step to coat the next polar layer, and then create it after the yellow light), then the method can be partially distinguished by the method of installation Will light. For example, the white top can be obtained by diffusion, and the light can be used to make the production area exposed to the wafer type and the resist to be mixed with the second image. The first light, the cover light is put into the fluorescent light and washed to show the light, and it can be further diffused and crystallized (f 1 ip is first on the wafer and then the development resistance, and it contains a photo-powder applied to it, it can be shaped It is enough to obtain all the mixed light conditions and set the diffusion to be uniform. Chi ρ) The surface is coated with a layer. After this step is completed, the electrophoresis of the exposed luminous body is not blocked by the photoresist. The early wafer is mostly set like a checkerboard. The hue and shape can be very homogeneous. See the fourth and fifth figures, which are the top and cross-sectional views of the wavelength conversion layer covering the center in the first embodiment of the single-chip multi-wavelength light-emitting diode of this creation. The light-emitting diode 20 includes a led chip 22 and is connected to a pin by a wire 24. The light-emitting layer is composed of a nitride-based compound semiconductor. A wavelength conversion layer 26 is covered at the center of the LED chip 22 of the light-emitting diode 20, and an uncovered portion 28 is formed around the wavelength conversion layer 26. The wavelength conversion layer 26 contains a photoluminescent phosphor. The light powder can convert the blue light emitted by the light-emitting diode wafer 22 to yellow light. In order to have the best benefit, the area covered by the wavelength conversion layer 26 should be greater than 5%, and less than 95%, of the light-emitting area of the light-emitting diode wafer 22. In the present creation, the wavelength conversion layer 26 is circular. However, the shape may be other shapes.

Page 11 M255516 Creative Instructions (7) Please refer to Figures 6 and 7, which are the top and cross-sectional views of the wavelength conversion layer covering the surroundings in the first embodiment of the single-chip multi-wavelength 1-light-emitting diode of this creative work. The light-emitting diode 30 of this embodiment includes a blue light-emitting diode (LED) chip 32 which is externally connected to the pin by a lead 34, and the upper surface of the sheet 32 is partially covered with a wavelength conversion layer 2 t said that "the light emitting layer of 3 2 is a semi-light emitting diode of a nitride-based compound of the LED chip", each of which is covered with a wavelength conversion layer 3 a at each corner, The part is in the middle of the wavelength conversion layer 38. The wave-emitting fluorescent powder can be replaced by the spleen chromium. The layer 3 contains the blue light emitted by the body 2 which has the best effect and is turned into yellow light. . The area of the product is five percent]. The area is also larger than the light-emitting diode's light-emitting surface or its surroundings. The surface of the central wafer is selectively covered by a skin-length conversion layer by the following process. First, use a dispenser to mix with the glue uniformly; then, ", glue" Second, the surface area of the photoluminescent phosphor powder is spotted on the glue dispenser for precise dispensing, and the wafer can be completed The above-mentioned two meal materials are then baked; then, the rubber is hardened when the above-mentioned first implementation is equal to a multi-wavelength light-emitting diode. 0, 3〇) When emitting light, ^ the light-emitting diode (10, 2 the wavelength conversion layer (14, 2 emits two colors of light on the surface, the light is yellow, but not 6, 36) The covered area emits blue light; in the part (16, 28, 38), there are two kinds of colors. When two observations are seen on the distant light emitting diode, the wavelength conversion layer covers it. District

i Page 12 M255516 IV. Creative Instructions (8) The domains are different in size and area, and can be mixed to show different &amp; Please refer to the eighth and ninth figures, which are a top view and a cross-sectional view of the second preferred embodiment of the single-chip multi-wavelength light emitting diode of this creation. The light-emitting diode 40 of the second embodiment includes a blue light-emitting diode crystal 4 2 which is connected to the pin by a wire 4 4. The area of the upper surface portion of the blue light-emitting diode wafer 2 It covers the first and second wavelength conversion layers 434 45 ′ and forms an uncovered portion 48. The light emitting layer of the blue light emitting diode chip 42 is composed of a nitride-based compound semiconductor. The first wavelength conversion layer 4 3 partially covered by the photodiode wafer 4 2 contains the first photoluminescent phosphor, and the blue light emitted by the light emitting diode can be yellow or green. The other part of the light-emitting diode wafer 42 is covered with the first wavelength conversion layer 45. The second wavelength-converting layer 45 contains a second type of photoluminescent phosphor, which can convert the blue light emitted by the light-emitting diode into red light. In order to have the best benefit, the area covered is greater than 5% of the light-emitting diode's light-emitting area and less than 95%. In the second embodiment of the above-mentioned creation, in order to cover two kinds of wavelength conversion layers on the light-emitting diode wafer, it can be achieved by the following process: using a dispenser to perform selective dispensing on the surface of the wafer Secondly, prepare two kinds of light-emitting phosphor powder paste, that is, the first type of phosphor powder and the second type of phosphor powder will emit longer wavelength light of different wavelengths after absorbing short wavelengths; The glue machine uses the first kind of fluorescent powder to spot the first kind of fluorescent powder paste on part of the surface of the wafer, and then bakes the glue to harden; then the glue machine is used to use the second kind of fluorescent powder on the wafer Spot the second phosphor paste on the part of the surface that is not covered by the first phosphor, and then bake

M255516 IV. Creative Instructions (9) To make the glue harden, the above-mentioned single light emitting diode emits 40% of the light, which is converted by the first wavelength conversion layer 4 or green light; it is converted by the second wavelength Red light; light that is not covered. In the near field, it can be seen that when the light emission is observed from a distance, three wavelengths of white light are generated when the wavelength conversion is different from that of the 'mixable light' and the color tone is different. Please refer to the tenth picture again for this original picture. By controlling the painting of the book, the author can accurately obtain the result of the mixed color tone of different wavelengths of colored light emitted by the polar bodies of different wavelength conversion layers and between L 2 depending on the desired tone. Even, this work uses light-emitting diodes with different hues. Therefore, one of the things that can be produced by this creation is that this creation can emit light of different wavelengths in a single light-emitting area. The technology requires multiple light-emitting meters of different colors. Second, the creation of a single light-emitting two-wavelength light, after diffusion color mixing can be chip multi-wavelength light-emitting diodes. "Shi" emits three areas on the surface covered by three colors 3, the area covered by yellow changing layers 4 5 is issued, and the hair portion 4 8 is the blue polar body showing three colors; the area covered by the far layer Size area is not. When red, green and blue are mixed, the white light color is more uniform. The X γ chromaticity of the CIE system or the area of precision dispensing can be used to determine the area of the light emitting two in advance, that is, the ratio of the straight line L1 in the figure, and the light emitting diode can be controlled by color mixing by diffusion. The same phosphor formula can be obtained, and the features and functions can be sorted as follows: On the wafer of the polar body, the circuit design can be simple in different, and unlike the previous components, the wafer of the polar body is complicated. In the above, the difference is enough to get the set hue.

Page 14 M255516 4. Creation instructions αο) 3. This creation can emit light of different wavelengths on a single light-emitting diode chip to increase the two color saturations. 4. By using the same phosphor formula, this creation can be equipped with light-emitting diodes of different shades. Unlike the previous technology, when adjusting different shades, different formulas need to be changed to achieve different light mixing ratios. .

In summary, the application “This creation has already met the requirements of the new patent” is filed in accordance with the law. However, those disclosed above are "only the preferred embodiment of this creation" and cannot be used to limit the scope of rights of this creation. Therefore, equal changes or modifications made in accordance with the scope of this creation application are still within the scope of this creation. I would like to ask the reviewing committee to take time to review it and look forward to granting patents early to encourage creativity.

Page 15 M255516 Brief Description of the Drawings [Simple Description of the Drawings] The first figure: a sectional view of a light emitting diode of the prior art. The second figure is a top view of the first preferred embodiment of the single-chip multi-wavelength light-emitting diode of the present invention. The third figure is a cross-sectional view of the first preferred embodiment of the single-chip multi-wavelength light-emitting diode of the present invention. The fourth figure is a plan view of the wavelength conversion layer covering the center in the first embodiment of the single-chip multi-wavelength light-emitting diode of the present invention.

Fig. 5 is a sectional view of the wavelength conversion layer covering the center in the first embodiment of the single-chip multi-wavelength light emitting diode of the present invention. Figure 6: This is a plan view of the wavelength conversion layer covering the surroundings in the first embodiment of the single-chip multi-wavelength light emitting diode of the present invention. Figure 7: A cross-sectional view of the wavelength conversion layer covering the surroundings in the first embodiment of the single-chip multi-wavelength light-emitting diode of the present invention. Figure 8: A plan view of the second embodiment of the single-chip multi-wavelength light-emitting diode of the present invention. Fig. 9 is a cross-sectional view of the second embodiment of the single-chip multi-wavelength light-emitting diode of the present invention. Figure 10: X Y chromaticity diagram of the C I E system for this creation.

[Reference number in the drawing] [Knowledge] Light-emitting diode 9 0 Sealant 91 LED chip 92 Case 94

Page 16 M255516 Brief description of the wire 9 3 Metal terminal 9 Original creative light emitting diode 1 0 Lead frame 1 1, 12 Wavelength conversion layer 1 4 LED chip 1 3 Lead 1 5 Uncovered part 1 6 Sealant 1 8 Light emitting diode 2 0 LED chip 2 2 Wire 2 4 Wavelength conversion layer 2 6 Uncovered part 2 8 Light emitting diode 3 0 LED chip 3 2 Wire 3 4 Wavelength conversion layer 3 6 Uncovered part 3 8 Light emitting diode 2 Polar body 4 0 First wavelength conversion layer 4 3 Second wavelength conversion layer 4 Conductor 4 4 Uncovered part 4 8

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Claims (1)

M255516 V. Application for patent scope 1. A light-emitting diode, including a light-emitting diode wafer having a light-emitting layer composed of a nitride-based compound semiconductor; and a wavelength conversion layer covering the light-emitting diode The eyebrow surface of the light-emitting layer of the polar wafer; by this, part of the light emitted by the light-emitting diode wafer is converted into light of another wavelength through the wavelength conversion layer, and part of the light emitted without passing through the wavelength conversion layer is still Light of the original wavelength. 2. The light-emitting diode according to item 1 of the scope of the patent application, wherein the periphery of the light-emitting diode is further provided with a sealant, and a predetermined color tone can be obtained through diffusion mixing. 3. The light-emitting diode according to item 1 of the scope of the patent application, wherein the nitride-based compound semiconductor has a light-emitting wavelength between 400 and 530 nm. 4. The light-emitting diode according to item 1 of the scope of the patent application, wherein the wavelength conversion layer contains at least one photoluminescent phosphor whose composition is a garnet-based phosphor activated by europium. 5. The light-emitting diode according to item 1 of the scope of the patent application, wherein the surface area of the wavelength conversion layer covering a part of the light-emitting layer having a nitride-based compound semiconductor is larger than the light-emitting area of the nitride-based compound semiconductor. Five percent and less than ninety-five percent. 6. A light-emitting diode, comprising a light-emitting diode wafer having a light-emitting layer composed of a nitride-based compound semiconductor; and Page 18 M255516 5. The scope of the patent application and the surface of the first wavelength conversion layer with different areas. The light-emitting wavelength conversion layer converts the first wave of light through the second wavelength conversion layer. The light-emitting diode can emit three light. 7. The outer periphery of the light-emitting diode is further to a predetermined color tone if the scope of the patent application. 8. The semiconducting compound of the nitride-based compound as described in the scope of the patent application. 9 'If at least the first wavelength conversion layer in the scope of the patent application is divided into at least garnet-activated garnet fluorescent 10, and as described in the scope of the patent application, the first wavelength conversion layer covers an area larger than the light-emitting diode. Less than 95% of the wafers. 1 1. According to the second wavelength conversion layer described in the scope of the patent application, its component is garnet activated by tritium. 1 2. According to the second wavelength conversion layer described in the scope of patent application, the second wavelength conversion layer covers a larger area than the light emitting diode. Polar light emission 'The light emitted by the light-emitting diode wafer covering the light-emitting layer passes through the &amp; light, and the light-emitting diode wafer's light will be converted into light of the second wavelength; by this kind of light of different wavelengths . The light-emitting diode according to item 6, wherein a sealing compound is provided, and the light-emitting diode according to item 6 can be obtained through diffusion color mixing, wherein the body has a light-emitting wavelength of 400 to 530 nm. The light-emitting diode according to item 6, , Which contains a photoluminescence phosphor, which forms a light body. The light-emitting diode according to item 6, wherein the light-emitting area of a part of the light-emitting layer of a nitride-based compound semiconductor is 5%. The light-emitting diode according to item 6, which contains at least one type of photoluminescent phosphor. Phosphor. The light-emitting diode according to item 6, wherein the area of the area of the nitride-based compound semiconductor is 5% or less, M255516 V. Scope of patent application Ninety-five 0 1H1 Page 20