TWM253057U - An airtight jointing and high thermal conductivity packaging structure - Google Patents
An airtight jointing and high thermal conductivity packaging structure Download PDFInfo
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- TWM253057U TWM253057U TW093200814U TW93200814U TWM253057U TW M253057 U TWM253057 U TW M253057U TW 093200814 U TW093200814 U TW 093200814U TW 93200814 U TW93200814 U TW 93200814U TW M253057 U TWM253057 U TW M253057U
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Led Device Packages (AREA)
Description
M253057 g、創作說明(l) 【新型所屬之技術領域】 本創作係有關於一種封裝結構,強化消散熱度的管道 而具高導熱^果,除能節省電源消耗提昇晶片發光品質外 ’並能做出單層或複層之覆膠結構體令商品種類達到多樣 化,此指稱為「氣密式高導熱封裝結構 【先前技術】 按習用技術領域裡,發光二極體(LED ; Light Emitted Diode)可應用於單顆或陣列式的封裝技術(如圖 一所示),主要疋將銘基板A所複合之電路板B(pc]3)上 a又‘凹槽B1而置入燈杯〇 ,晶片D植在燈杯c内用導線e 接設至電路板Β,藉助模具灌注環氧樹脂F(Ep〇xy)包覆 晶片D與導線E迴路....... 然而此一封裝技術,經實際使用後發現有缺失如下: ⑴散熱差一環氧樹脂F及電路板b ( Pcb)具有斷熱之功效 ,唯二能導熱處為燈杯C下方,因散熱面積有限,經由 此單點所散之熱父換效率較差,而其他部份均為環氧 樹脂F等膠材,被此類材質環伺即形成一個幾近保溫封 閉=作用%境,當晶片D作用發光時,其中心發光層產 生南達近攝氏兩百度的熱量,因被環氧樹脂^^包覆所致 熱度無法散發,所以容易有不發熱之錯覺,致使發光二 極2空有冷光之名,但在此熱交換率效能不足的狀態下 ’容易影響晶片D的發光功率及使用壽命。 “ ⑵成本高、變化少一灌注環氧樹脂F包覆晶片β與導線eM253057 g. Creation Instructions (l) [Technical Field to which the New Type belongs] This creation relates to a packaging structure that strengthens the heat dissipation pipe and has high thermal conductivity. In addition to saving power consumption and improving the luminous quality of the chip ', it can also do The single-layer or multi-layer rubber-coated structure has diversified the types of products. This is referred to as "hermetically sealed and highly thermally conductive packaging structure. [Prior technology] According to the conventional technology, light-emitting diodes (LEDs; Light Emitted Diodes) It can be applied to single or array packaging technology (as shown in Figure 1). It is mainly used to place the a and 'groove B1' on the circuit board B (pc) 3) compounded by the substrate A into the lamp cup. The chip D is implanted in the lamp cup c and is connected to the circuit board B with a wire e, and the circuit of the chip D and the wire E is covered with a mold injecting epoxy resin F (Epoxy). However, this packaging technology After actual use, the following defects are found: 差 Poor heat dissipation-epoxy resin F and circuit board b (Pcb) have the function of heat insulation. The only place that can conduct heat is below the lamp cup C. Due to the limited heat dissipation area, pass this list. The heat transfer efficiency of the scattered points is poor, while the other parts are epoxy. Resin F and other plastic materials are formed by this kind of material to form a nearly heat-insulated seal = action% environment. When the wafer D acts to emit light, its central light-emitting layer generates heat of about two hundred degrees Celsius, which is due to epoxy resin. ^^ The heat caused by the coating cannot be dissipated, so it is easy to have the illusion of no heat, so that the light-emitting diode 2 has the name of cold light, but in this state of insufficient heat exchange rate efficiency, it is easy to affect the luminous power and use of chip D. Life. "“ High cost, less change-epoxy resin F coated wafer β and wire e
第6頁 M253057 四、創作說明(2) 迴路時所藉助之模具組,必須講求高精密度,製造成本 無法降低,再者,面對各種規格迥然不同之陣列式產品 ’就必需要製作出相對更高成本的模具組來加以配合。 【新型内容】 有鑑於此,本案創作人以從事電子元件研製產銷多 “材料學、熱力學及光學、流體力學等相 關ί業知識’潛心研究實驗,繼先前蒙獲鈞局核准之發 明專利權第1 67361 1號「亩疼彳路止拉胁 h准之發 遂有本案創作的誕生 冷式發光二極體」專利案後’ 結構本ί:::係提供-種氣密式高導熱封裝 傳導晶片發来拉:率之金屬所製成的基座,可迅速接收 片之ί觸面倣古ί生的作用熱,並均勻由基板或其散熱鰭 加強散埶效能,捉:ΐ交換’提供適當的管道消散熱度、 光之亮=丨促使晶片得以作更高功率的輸丨,強化發 結構本= :為提供-種氣密式高導熱封裝Page 6 M253057 IV. Creation instructions (2) The mold set used in the circuit must emphasize high precision, and the manufacturing cost cannot be reduced. Furthermore, in the face of various array products with very different specifications, it is necessary to produce relative Higher cost mold sets to match. [New content] In view of this, the creators of this case devoted themselves to research and production of electronic components with “knowledge of materials science, thermodynamics, optics, fluid mechanics, etc.” related research and development experiments. 1 67361 No. 1 "Mu Tonglu Road Stops Pulling Threatened Hair" The patent case of the birth of the cold-type light-emitting diode created in this case "Structure book: Chip pull-up: The base made of metal can quickly receive the heat generated by the contact surface of the film, and evenly enhance the dissipation performance by the substrate or its heat-dissipating fins. The heat dissipation of the pipe, the brightness of light = 丨 promote the chip to make higher power transmission 丨, strengthen the structure of the book =: to provide-a kind of air-tight high thermal conductivity package
ϊΐϊί 做特殊塗佈處理,*以做單-或多-欠充埴I 層之覆膠結構或相異的覆膠’造*單層或複 合投資效益的條件下ί各種不同的I光效果’故能在符 爭力。 /、 ,7商品多樣化而擁有業界最大的競ϊΐϊί do special coating treatment, * to make single-or multi-underfilled 埴 I layer of rubberized structure or different coatings 'make * single layer or composite investment benefits under the conditions of various I light effects' So it can compete. / 、, 7 products are diversified and have the largest competition in the industry
第7頁 【實施方式】 本創作之進一步構造、特徵及目的,於 具體實施例,ϋ配合圖式詳細說明之後,將2出較佳 藝者所完全瞭解。 了為精於此技 茲配合圖式將本創作之較佳實施例詳細說明如 首先請參閲圖二,為本創作一較佳具體實施例 系統圖。其主要構成包括: 】之立體 基座10,係採用高導熱金屬製作而成,其縱截面呈凸 子狀(如圖四所示),上部為橫切面較小之豎柱 製成皿型凹陷供晶片40植裝之杯槽12,而在下部橫切面較 大之盤基13,散熱功能之鰭片(圖略)直接佈設於外部表 面0 基板20 ,係金屬製作而成,設有供基座1〇豎柱u安裝 =穿口21 (配合豎柱11橫切面或其鰭片分布形狀製造)及 谷置盤基13相通之魚眼槽24 ,並環設複數個供透光罩5〇插 裝之定位孔22及包覆膠60之注料孔23。 電路板30,係相對於基板2〇同等位置,設有供基座1〇 登柱11安裝之穿口 31 (配合豎柱η橫切面或其鰭片分布形 狀製造),並環設複數個供透光罩5〇插裝之定位孔32及覆 勝6 0之注料孔3 3 ’表面佈設迴路3 4。 晶片40,係光效能之半導體,例:ld (Laser Diode 雷射二極體)或LED(Light Emitted Diode發光二極體) ......等’依照亮度、顏色或實際使用需求植裝相當數量於 基座10之杯槽12 ’用導線41連接電路板3〇迴路34。Page 7 [Embodiment] The further structure, characteristics and purpose of this creation will be fully understood by the two better artists after detailed descriptions in conjunction with the drawings in specific embodiments. In order to be proficient in this technique, the preferred embodiment of this creation will be described in detail in conjunction with the drawings. First, please refer to FIG. 2 for a system diagram of a preferred embodiment of this creation. Its main components include:] The three-dimensional base 10 is made of highly thermally conductive metal. Its longitudinal section is convex (as shown in Figure 4), and the upper part is a dish-shaped depression with a small vertical cross-section. Cup groove 12 for wafer 40 implantation, and in the lower base 13 with a larger cross-section, fins (not shown) for heat dissipation are directly arranged on the outer surface 0 substrate 20, which is made of metal and provided with a base Seat 10 vertical column u installation = through opening 21 (manufactured with the cross section of vertical column 11 or its fin distribution shape) and fisheye groove 24 communicating with valley plate base 13 and a plurality of light transmitting covers 5 Positioning holes 22 for inserting and injection holes 23 for covering rubber 60. The circuit board 30 is located at the same position as the substrate 20, and is provided with a through hole 31 for mounting the base 10 on the pillar 11 (manufactured in accordance with the vertical cross section of the vertical column η or its fin distribution shape), and a plurality of The positioning hole 32 of the transparent cover 50 is inserted, and the injection hole 3 3 ′ covering the win 60 is provided with a circuit 34. Chip 40 is a semiconductor with light efficiency, for example: ld (Laser Diode laser diode) or LED (Light Emitted Diode) ... etc. A considerable number of cup slots 12 ′ of the base 10 are connected to the circuit board 30 circuit 34 with wires 41.
第8頁 M253057 四、創作說明(4) 产罩5〇,為透光係數高的材質可製成各種式樣,罩 設有定位腳51,罩内可預製螢光層52或做特殊塗佈處理 覆膠60 ,係以具絕緣效果之材質,融溶狀態由基板μ 注料孔2 3經電路杯m ψ且方Q Q « 孜d U /主料孔3 3,以早一或多層次方式依序 充填2色、材料相同或相異的覆膠6 0 ,而佈滿於透光罩5〇 所覆蓋之基座1〇杯槽12内(如圖四、五所示),造成 或複層之覆膠60結構體。 9Page 8 M253057 IV. Creation instructions (4) Production mask 50, which can be made into a variety of materials with high transmittance. The mask is provided with positioning feet 51. The fluorescent layer 52 can be prefabricated in the mask or special coating treatment can be done. Cover 60 is made of a material with insulation effect. The melted state is from the substrate μ. The injection hole 2 3 passes through the circuit cup m ψ and the square QQ «Zd U / the main material hole 3 3. Sequentially filled with 2 colors, the same or different material 60, and covered in the 10 cup groove 12 of the base covered by the transparent cover 50 (as shown in Figures 4 and 5), resulting in or multi-layer Covered with 60 structure. 9
I 下/、有上述元件結構之特徵,其陣列式組裝程序分述如 請參閱圖六,為本創作以多罩陣列式具體實施例之立 體系統圖。如圖所示,茲將基板2〇及電路板3〇之穿口 21 (穿口31)作複數個排列組合,並在每個穿口以(穿口31)周 圍設置定位孔22及注料孔23 ,當相對數量的基座1〇安裝後 ,杯槽12内的晶片40用導線41銜接至迴路34,再將透光罩 50 (採一對一覆蓋法)定位腳51 一一插裝於各組定位孔“ (定位孔22 ) t,由注料孔23充填覆膠6〇。 請繼續參閱圖八,為本創作以單罩陣列式具體實施例 之立體系統圖。如圖所示,同上將基板2〇及電路板3〇之穿 口 21 (穿口 3 1 )作複數個排列組合,僅在電路板3 〇外周圍 設置定位孔22及注料孔23 (需在透光罩5〇覆蓋範圍内), §相對數3:的基座10安裝後’杯槽12内的晶片用導線41 銜接至迴路34,將-透光罩50(採一對多覆蓋法=腳 51插裝於定位孔32 (定位孔22)中,由注料孔23充填覆膠 第9頁 M253057 四、創作說明(5) 60 〇 以上多罩陣列式與單罩陣列式可複合使用:就是在電 路板30上以一對一及一對多之方法的透光罩5〇來交互配合 覆蓋。I // has the characteristics of the above-mentioned component structure, and the array assembly process is described in detail. Please refer to FIG. 6, which is a stereo system diagram of a specific embodiment of a multi-mask array. As shown in the figure, the through holes 21 (through holes 31) of the substrate 20 and the circuit board 30 are arranged in a plurality of combinations, and positioning holes 22 and injection materials are provided around each through hole (through hole 31). Holes 23, after the relative number of bases 10 are installed, the chip 40 in the cup groove 12 is connected to the circuit 34 with a wire 41, and the positioning pins 51 of the transparent cover 50 (using a one-to-one covering method) are inserted one by one In each group of positioning holes "(location holes 22) t, the filling hole 60 is filled by the injection hole 23. Please continue to refer to Figure 8 for a three-dimensional system diagram of the specific embodiment of the single mask array. The same as above, the through holes 21 (through holes 3 1) of the substrate 20 and the circuit board 30 are arranged in a plurality of combinations, and only positioning holes 22 and injection holes 23 are provided around the outside of the circuit board 30 (required in the transparent cover 50 ° coverage), § Relative number 3: After the base 10 is installed, the chip in the cup groove 12 is connected to the circuit 34 with a wire 41, and the light-transmitting cover 50 (one-to-many coverage method = foot 51 is inserted) It is installed in the positioning hole 32 (positioning hole 22) and filled with rubber through the injection hole 23. Page 9 M253057 4. Creation instructions (5) 60 〇 Multi-mask array type and single-mask array type can be combined Use: It is a one-to-one and one-to-many light-transmitting cover 50 on the circuit board 30 to interact and cover.
具有上述元件結構之特徵,其使用功效分述如下: 請參閱圖四、五,當杯槽12内的晶片40因作用發光時 所產生的作用熱70,迅速由基座1〇所吸收,並均勻傳導至 基板20或其散熱鰭片之接觸面做有效的熱交換、提升散熱 功率,晶片40得以作更高功率的輸出,強化發光之亮度效 果! 綜 板20所 乎物理 當可達 要求, 「多樣 雖 式說明 即大凡 應仍屬 上所述 形成的 定律並 到產業 且因透 化」之 然本說 ,顯然 依本創 本創作 裝置,係屬 充分提升熱 之「提升產 光罩50搭配 目的,當合 明書中業已 熟悉此類技 作申請專利 專利涵蓋範 運用材質及 交換率之技 品效率」、 注料孔33之 乎專利法有 就本案較佳 術者可就該 範圍所作之 圍内。 性之基座1 0結構與基 電子特性的結構,合 術思想的南度創作, 「降低生產成本」的 構造,能使商品呈現 關新型之規定。 具體實施例並配合圖 實施例從事修改,應 均等變化與修飾,皆It has the characteristics of the above-mentioned element structure, and its use effect is described as follows: Please refer to FIGS. 4 and 5. When the wafer 40 in the cup groove 12 emits light due to the action, the action heat 70 is quickly absorbed by the base 10, and Evenly conductive to the contact surface of the substrate 20 or its fins for effective heat exchange and improved heat dissipation power, the chip 40 can output higher power and enhance the brightness effect of light emission! The physics of the heddle 20 should meet the requirements. Although "variety description means that the general should still belong to the law formed by the above and go to the industry and because of penetration", it is said that it is obviously based on the original creation device. Fully improve the "the purpose of improving the production of the photomask 50, when Heming Book is already familiar with the efficiency of such technologies for applying patents and patents covering the use of materials and exchange rates," and the injection hole 33 is based on the patent law. This case is within the limits of what the surgeon can do with that range. The structure of the base of sex 10 and the structure of the basic electronic characteristics, the southern creation of technical ideas, and the structure of "reducing production costs" can make the products present new regulations. The specific embodiments are combined with the drawings. The embodiments are subject to modification and should be equally changed and modified.
M253057 圖式簡單說明 〜 -一"" 【圖式簡單說明】 圖*一係@ Βϊ / 用傳統封裝技術結構之剖面狀態示意圖。 =係本創作一叙佳具體實施例之立體系統圖。 圖一係本創作一較佳具體實施例之立體示意圖。 圖四係本創作單層覆膠具體實施例之使用狀態剖面圖 圖五係本創作複層覆膠具體實施例之使用狀態剖面圖 圖六係本創作以多罩陣列式具體實施例之立體系統圖 圖七係本創作以多罩陣列式具體實施例之立體示意圖 圖八係本創作以單罩陣列式具體實施例之立體系統圖 圖九係本創作以單罩陣列式具體實施例之立體示意圖M253057 Simple illustration of the pattern ~-一 " " [Simplified description of the pattern] Figure * 一 系 @ Β 剖面 / Schematic diagram of the cross-sectional state of the structure using traditional packaging technology. = This is a three-dimensional system diagram of a specific embodiment of Xu Jia. FIG. 1 is a schematic perspective view of a preferred embodiment of the present invention. Figure 4 is a sectional view of the use of the embodiment of the single-layer coating of the present invention. Figure 5 is a sectional view of the use of the embodiment of the multiple-layer coating of the present invention. Figure 7 is a three-dimensional schematic diagram of a multiple mask array embodiment of the present invention Figure eight is a three-dimensional system diagram of a single mask array embodiment of the present invention Figure nine is a three-dimensional schematic diagram of a single mask array embodiment of the present invention
M253057 圖式簡單說明 【圖式參照號數】 習用方式(傳統封裝技術結構) A铭基板 B電路板(Pcb) B1凹槽 C燈杯 D晶片 E導線 F環氧樹脂(Epoxy ) 本案(氣密式高導熱封裝結構) 10基座 11豎柱 20基板 21穿口 2 4魚眼槽 30電路板(Pcb) 31穿口 34迴路 4 0晶片 41導線 50透光罩 5 1定位腳 60覆膠 70熱 12杯槽 13盤基 2 2定位孔 3 2定位孔 52螢光層 2 3注料孔 3 3注料孔M253057 Brief description of the drawing [reference number of the drawing] Conventional method (traditional packaging technology structure) A Ming substrate B circuit board (Pcb) B1 groove C lamp cup D chip E wire F epoxy (Epoxy) This case (airtight High thermal conductivity packaging structure) 10 base 11 vertical column 20 substrate 21 through hole 2 4 fisheye slot 30 circuit board (Pcb) 31 through hole 34 circuit 4 0 chip 41 wire 50 light transmission cover 5 1 positioning foot 60 covered with rubber 70 Hot 12 cup slot 13 tray base 2 2 positioning hole 3 2 positioning hole 52 fluorescent layer 2 3 injection hole 3 3 injection hole
第12頁Page 12
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TW093200814U TWM253057U (en) | 2004-01-16 | 2004-01-16 | An airtight jointing and high thermal conductivity packaging structure |
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TW093200814U TWM253057U (en) | 2004-01-16 | 2004-01-16 | An airtight jointing and high thermal conductivity packaging structure |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN1983593B (en) * | 2005-12-15 | 2010-05-12 | 傅立铭 | High-power active thin light-emitting diode |
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Publication number | Priority date | Publication date | Assignee | Title |
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CN1983593B (en) * | 2005-12-15 | 2010-05-12 | 傅立铭 | High-power active thin light-emitting diode |
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