TWM240057U - Multiple-step inner lead of leadframe - Google Patents

Multiple-step inner lead of leadframe Download PDF

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Publication number
TWM240057U
TWM240057U TW093206781U TW93206781U TWM240057U TW M240057 U TWM240057 U TW M240057U TW 093206781 U TW093206781 U TW 093206781U TW 93206781 U TW93206781 U TW 93206781U TW M240057 U TWM240057 U TW M240057U
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TW
Taiwan
Prior art keywords
chip
wafer
stacked multi
adhesive layer
scope
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TW093206781U
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Chinese (zh)
Inventor
Jui-Chung Lee
Chen-Jung Tsai
Chih-Wen Lin
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Macronix Int Co Ltd
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Priority to TW093206781U priority Critical patent/TWM240057U/en
Publication of TWM240057U publication Critical patent/TWM240057U/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32135Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/32145Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/49105Connecting at different heights
    • H01L2224/49109Connecting at different heights outside the semiconductor or solid-state body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors

Landscapes

  • Lead Frames For Integrated Circuits (AREA)
  • Die Bonding (AREA)
  • Wire Bonding (AREA)

Description

M240057 五、創作說明(1) 一、【新型所屬之技術領域】 本創作係有關於一種堆疊式多晶片構裝,特別是有關 於一種導線架堆疊式多晶片構裝的結構。 二、【先前技術】 在追求高效能與低成本的目的下,如何加速產品最小 化及高密度構裝變成為電子工業重要的目標。積體電路產 品的構裝密度受限於晶片可供黏著固定的面積與晶片構裝 的高度。常用增加構裝密度的方法為垂直的堆疊晶片來完 成構裝。 參照第一圖,此圖為一常見多晶片堆疊構裝的結構。 一晶片1 2 0和一晶片1 3 0以一黏著層1 5 0黏著垂直堆疊在一 導線架晶片座1 0 0上,且有複數個内引腳1 0 2環繞在導線架 晶片座1 0 0周圍。複數個金屬導線1 2 2和複數個金屬導線 1 3 2分別連接晶片1 2 0和晶片1 3 0的主動面到内引腳1 0 2上。 美國專利編號6,1 1 8,1 7 6專利揭露能堆疊兩晶片的一 堆疊晶片結構。晶片堆疊在導線架晶片座的同一側,而導 線架作成階梯狀純粹用來承載晶片。美國專利編號6,0 8 7, 7 1 8專利揭露一堆疊式半導體晶片構裝。此創作中内引腳 主要功能為承載晶片。美國專利編號5,8 0 4,8 7 4專利揭露 一弔架晶片構裝(Lead-on-Chip)。本創作使用之内引腳 主要功能為承載晶片。美國專利編號5,5 3 0,2 8 1專利和美 M240057 五、創作說明(2) 國專利編號4,9 8 7,4 7 3專利分別揭露類似延伸至不同平面 的交錯式排列之内引腳,用來縮短金屬銲線與防止銲線交 錯。美國專利編號5,2 9 1,0 6 1專利揭露一多晶片堆疊構裝 結構,向上延伸的内引腳分別延伸至不同平面用來縮短金 屬銲線與防止銲線交錯。 在上述習知文獻中仍有許多缺點需要克服。舉例來說 ,其引腳的設計會使製程更加複雜,如不同方向的銲接技 術,因而增加額外的設備成本和製程的困難度。另外,在 銲墊與内引腳的特殊設計也會增加構裝成本和製程的困難 度0 g 堆疊晶 片作用 特殊的 備較複 現有標 兩晶片 計或變 計上, 孤長過 特殊堆 晶片結 前導 片於 面分 銲墊 雜且 準產 作用 更, 為利 大, 疊架 構上 線架型式多晶 導線架晶片座 別朝向不同方 位置設計。另 不易控制更容 品 另一貝1是 面均朝向同一 可利用現有產 於堆疊晶片上 以往常在導線 構或重複堆疊 限制很多且僅 片堆疊 (die 向,因 外,其 易在製 堆疊晶 方向, 品。而 銲線製 架晶片 導線架 適於少 構裝主要 paddle) 此需要針 製程需特 程中損傷 片於導線 因此不需 在晶片堆 程與避免 座上開槽 内引腳。 數特殊結 分為兩類。一為 兩邊,由於兩晶 對其中一晶片作 殊反轉技術及設 晶片,無法利用 架同一側,由於 對晶片作特殊設 疊構裝導線架設 銲線重疊短路和 (slot)再配合 此些結構在堆豐 構,或是製程技M240057 V. Creation Description (1) [Technical Field to which the New Type belongs] This creation relates to a stacked multi-chip structure, especially to a lead frame stacked multi-chip structure. 2. [Previous Technology] In the pursuit of high efficiency and low cost, how to accelerate product minimization and high-density packaging has become an important goal for the electronics industry. The packaging density of integrated circuit products is limited by the area of the chip that can be fixed and the height of the chip. A commonly used method to increase the density of the assembly is to stack the wafers vertically to complete the assembly. Referring to the first figure, this figure shows a structure of a common multi-chip stacked structure. A wafer 1 2 0 and a wafer 1 3 0 are vertically stacked on a lead frame wafer holder 1 0 0 with an adhesive layer 15 0, and a plurality of inner pins 1 0 2 surround the lead frame wafer holder 1 0 0 around. The plurality of metal wires 1 2 2 and the plurality of metal wires 1 3 2 respectively connect the active surfaces of the wafers 120 and 130 to the inner pins 102. U.S. Patent No. 6,118,176 discloses a stacked wafer structure capable of stacking two wafers. The wafers are stacked on the same side of the leadframe wafer holder, and the leadframes are made in steps to carry the wafers purely. US Patent No. 6,0 8 7, 7 1 8 discloses a stacked semiconductor wafer structure. The main function of the inner pin in this creation is to carry the chip. U.S. Patent No. 5,804,874 discloses a Lead-on-Chip. The main function of the inner pin used in this creation is to carry the chip. US Patent No. 5,5 3 0, 2 8 1 Patent and US M240057 V. Creative Instructions (2) National Patent No. 4, 9 8 7, 4 7 3 Patent respectively disclose staggered arrangement of inner pins extending to different planes , Used to shorten the metal welding wire and prevent the welding wire from staggering. U.S. Patent No. 5,29,0 61 discloses a multi-chip stacking structure. The upwardly extending inner pins are respectively extended to different planes to shorten the metal bonding wires and prevent the bonding wires from being staggered. There are still many disadvantages to be overcome in the above-mentioned conventional literature. For example, the design of its pins will make the process more complicated, such as welding technology in different directions, thus adding additional equipment costs and process difficulties. In addition, the special design of the pads and inner pins will also increase the construction cost and the difficulty of the process. 0 g Stacked wafers have a special function compared to the existing standard two-wafer meter or variable meter. The chip-on-surface soldering pads are mixed and have a more quasi-production effect. For the benefit, the wireframe type polycrystalline leadframe chip holder on the stacked structure is designed to face different positions. The other is not easy to control and more compatible. The other side is facing the same. You can use the existing production on stacked wafers. In the past, the wire structure or repeated stacking was often limited and only stacked. Orientation, product, and wire bonding frame chip lead frame is suitable for less construction of the main paddle.) This requires the needle process to damage the wire during the special process, so there is no need to slot the pins on the chip stacking process and avoid the socket. There are two types of special knots. One is on both sides. Because the two crystals make special reversal technology and set the wafer on one of the wafers, the same side cannot be used. Because the wafer is made with a special stacking structure, the wires are set to overlap the short-circuits and the slots are combined with these structures In heap structure, or process technology

第6頁 M240057 五、創作說明(3) 術複雜且控制不易。 三、【新型内容】 本創作的一目的是藉改良導線架内引腳的結構設計降 低在銲線上的困難度並增加多晶片堆疊構裝之良率。 本創作的另一目的在提供一導線架型式堆疊多晶片構 裝結構,其中導線架内引腳設計成階梯狀。 本創作的再一目的在提供一導線架内引腳設計成階的 梯狀導線架型式堆疊多晶片構裝結構以降低銲線上的困難 ^ 度並增加多晶片堆疊構裝之可行性。Page 6 M240057 V. Creative Instructions (3) The technique is complicated and difficult to control. 3. [New Content] One of the objectives of this creation is to improve the structural design of the leads in the lead frame to reduce the difficulty of bonding wires and increase the yield of multi-chip stacked structures. Another purpose of this creation is to provide a lead frame type stacked multi-chip structure, in which the leads in the lead frame are designed in a step shape. Another purpose of this creation is to provide a ladder-shaped lead frame-type stacked multi-chip mounting structure with lead pins designed in stages to reduce the difficulty of bonding wires and increase the feasibility of multi-chip stacked mounting.

根據以上所述之目的,本創作提供了一導線架型式堆 疊多晶片構裝結構,此結構至少包含下列元件。一導線架 晶片座和複數個向上階梯狀引腳環繞在此導線架晶片座周 圍,其中每一此些階梯狀引腳分別有數個水平階層。一第 一晶片在此導線架晶片座上且此第一晶片的一主動面係朝 上並背對此導線架晶片座。複數個第一金屬導線連接此些 階梯狀引腳的一第一水平階層到此第一晶片的主動面,其 中此些階梯狀引腳的的第一水平階層係接近此導線架晶片 座。一第二晶片堆疊在此第一晶片上且此第二晶片的一主 動面係朝上並背對此導線架晶片座。複數個第二金屬導線 連接此些階梯狀引腳的一第二水平階層到此第二晶片的主 M240057 五、創作說明(4) 動面,其中此些階梯狀引腳的的第二水平階層係自第一水 平階層向上延伸。 例為寬描在的 施作、細地後 實此度詳泛之 作以長會廣以 創應含例以其 本不包施可, 述然應實還定 詳,,些作限 在明中一創受 ,說作的本不 下利製作,圍 如以的倉外範 述大際本述的 描放實。描作 細部在寸細創 詳局,尺詳且 圖作外間了, 1意例此空除行 式示比。維,施。 方用般知三而例準 施作一認的然施為 實創依的度。實圍 ί本不定深下的範 、 會限及如他利 四 時有度述其專 本創作提供一導線架型式堆疊多晶片構裝結構,此結 構中導線架具有階梯狀内引腳。此階梯狀内引腳可依堆疊 晶片之高度與數量作調整。同時亦可針對不同銲線技術特 徵設計不同型式階梯狀内引腳。 參照第二A圖,此圖係為本創作之一實施例。一第一 晶片2 0和一第二晶片3 0係垂直堆疊在一導線架晶片座1 0上 。其中,第一晶片2 0的一主動面和第二晶片3 0的一主動面 均朝上並背對於導線架晶片座1 0。第一晶片2 0和第二晶片 3 0係使用一固態黏著層5 0將其堆疊黏著。此結構更包含一 黏著層將第一晶片2 0固定在導線架晶片座1 0上。有複數個 階梯狀内引腳1 2環繞在導線架晶片座1 0周圍。任一階梯狀According to the above purpose, the present invention provides a lead frame type stacked multi-chip structure, which includes at least the following components. A lead frame chip holder and a plurality of upward stepped pins surround the lead frame chip holder. Each of the stepped pins has a number of horizontal levels. A first wafer is on the leadframe wafer holder and an active face of the first wafer is facing up and facing away from the leadframe wafer holder. A plurality of first metal wires connect a first horizontal layer of the stepped pins to the active surface of the first chip, wherein the first horizontal layer of the stepped pins is close to the lead frame chip holder. A second wafer is stacked on the first wafer and a driving surface of the second wafer faces upward and faces away from the lead frame wafer holder. A plurality of second metal wires connect a second horizontal layer of the stepped pins to the master of the second chip. M240057 5. Creation instructions (4) Moving surface, in which the second horizontal layer of the stepped pins The system extends upward from the first level. For example, the application of the broad description, the detailed work after the detailed description, the long-term meeting, the wide application, and the example, which does not include the application, the description should also be set in detail. In the first form, the production of the book is not profitable, and the narrative outside the warehouse is a description of Daji's description. The details of the description are detailed in the inch, the rule is detailed, and the figure is outside. Wei, Shi. Fang uses the knowledge of the three and the rules to apply the degree of recognition and then to the actual creation. Actually, the scope, scope and scope of the indeterminate depth, as well as his detailed description of his work, provide a lead frame type stacked multi-chip structure, in which the lead frame has stepped inner pins. The stepped inner pins can be adjusted according to the height and number of stacked chips. At the same time, different types of stepped inner pins can be designed for different bonding wire technology features. Referring to the second figure A, this figure is an embodiment of the creation. A first wafer 20 and a second wafer 30 are vertically stacked on a lead frame wafer holder 10. Among them, an active surface of the first wafer 20 and an active surface of the second wafer 30 are both facing upward and facing away from the lead frame wafer holder 10. The first wafer 20 and the second wafer 30 are stacked and adhered using a solid adhesive layer 50. This structure further includes an adhesive layer for fixing the first chip 20 on the lead frame chip holder 10. There are a plurality of step-shaped inner pins 12 surrounding the lead frame chip holder 10. Stepped

第8頁 M240057 五、創作說明(5) 内引腳1 2皆有數個水平階層,如階梯狀内引腳1 2有一第一 水平階層和一第二水平階層,其中第一階層係最接近導線 架晶片座1 0而第二階層係自第一階層向上延伸。在此,任 一對水平階層的夾角係大於九十度。有複數個第一金屬導 線2 2連接階梯狀内引腳1 2的第一階層到第一晶片2 0的主動 面。有複數個第二金屬導線3 2連接階梯狀内引腳1 2的第二 階層到第二晶片30的主動面。 參照第二B圖和第二C圖,係為本創作其他實施例。其 中,其中不同圖式中相同的標號代表相同的物件,故不再 重複敘述。在此些實施例中,第一晶片2 0和第二晶片3 0使 用一液態黏著膠5 2,如環氧樹脂,來黏著堆疊。參照第二 C圖,在此結構中階梯狀内引腳1 4的任一對水平階層的夾 角可為九十度或略小於九十度。有複數個第一金屬導線24 連接階梯狀内引腳1 4的第一階層到第一晶片2 0的主動面。 參照第三A圖,係為本創作針對堆疊三個以上多晶片 構裝的一個實施例。一第三晶片4 0係使用一固態黏著層5 4 將其堆疊黏著在第二晶片3 0上,且第三晶片4 0的一主動面 朝上並背對於導線架晶片座1 0。有複數個階梯狀内引腳1 6 環繞在導線架晶片座1 0周圍且内引腳1 6係有三個階層(一 第一水平階層,一第二水平階層,和一第三水平階層), 其中第三水平階層係自第二水平階層向上延伸。有複數個 第三金屬導線4 2連接内引腳1 6的第三階層到第三晶片4 0的Page 8 M240057 V. Creation Instructions (5) Inner pin 12 has several horizontal levels. For example, stepped inner pin 12 has a first horizontal level and a second horizontal level. The first level is the closest to the wire. The wafer holder 10 and the second stage extend upward from the first stage. Here, the angle between any pair of horizontal steps is greater than ninety degrees. There are a plurality of first metal wires 22 connecting the first layer of the stepped inner pins 12 to the active surface of the first chip 20. There are a plurality of second metal wires 32 connecting the second layer of the step-shaped inner pins 12 to the active surface of the second chip 30. Referring to the second diagram B and the second diagram C, it is another embodiment of the present invention. Among them, the same reference numerals in different drawings represent the same objects, so the description will not be repeated. In these embodiments, the first wafer 20 and the second wafer 30 use a liquid adhesive 52, such as epoxy resin, to adhere to the stack. Referring to FIG. 2C, the angle between any pair of horizontal steps of the stepped inner pins 14 in this structure may be ninety degrees or slightly less than ninety degrees. A plurality of first metal wires 24 connect the first layer of the stepped inner pins 14 to the active surface of the first chip 20. Referring to FIG. 3A, an embodiment of the present invention is directed to stacking more than three multi-chip structures. A third wafer 40 is stacked and adhered to the second wafer 30 using a solid adhesive layer 5 4, and an active side of the third wafer 40 faces upward and faces away from the lead frame wafer holder 10. There are a plurality of stepped inner pins 16 surrounding the lead frame chip holder 10 and the inner pins 16 have three levels (a first horizontal level, a second horizontal level, and a third horizontal level), The third horizontal stratum extends upward from the second horizontal stratum. There are a plurality of third metal wires 4 2 connecting the third layer of the inner pins 16 to the third chip 40.

第9頁 M240057 五、創作說明(6) 主動面。在此,階梯狀内引腳1 6的任一對水平階層的夾角 係大於九十度。 參照第三B圖和第三C圖,係為.本創作針對堆疊三個以 上多晶片構裝的另些實施例。在此些實施例中,第一晶片 2 0,第二晶片3 0,和第三晶片4 0係使用一液態黏著層5 2和 一液態黏著層5 6依序堆疊。參照第三C圖,在此結構中階 梯狀内引腳1 8的任一對水平階層的爽角可為九十度或略小 於九十度。 在本創作中,階梯裝内引腳的設計可依不同銲線技術 特徵設計不同型式階梯狀内引腳,如正常銲線法(norma 1 bond)和反向銲線法(reverse bond)。若階梯狀内引腳 的任一對水平階層的夾角為九十度或略小於九十度時,可 適用於使用反向銲線法作銲接作動且可有效提高銲接時的 良率。若階梯狀内引腳的任一對水平階層的夾角係大於九 十度時,可適用於使用正常銲線法作銲接作動。本創作的 階梯狀内引腳可依堆疊晶片之高度與數量和不同銲線技術 特徵作調整。 本創作可有效地克服習知技術的缺點。此階梯式内引 腳在製作上僅需利用原導線架内引腳再經一次或多次衝壓 成型,相同於一般導線架製程。且本創作結構之多晶片構 裝製程與設備與單晶片構裝完全相同,無需額外的構裝程Page 9 M240057 V. Creation Instructions (6) Active side. Here, the included angle of any pair of horizontal steps of the stepped inner pins 16 is greater than ninety degrees. Refer to Figures 3B and 3C, which are directed to other embodiments of stacking three or more multi-chip structures. In these embodiments, the first wafer 20, the second wafer 30, and the third wafer 40 are sequentially stacked using a liquid adhesive layer 52 and a liquid adhesive layer 56. Referring to FIG. 3C, in this structure, the cool angle of any pair of horizontal steps of the stepped inner pins 18 may be ninety degrees or slightly less than ninety degrees. In this creation, the design of stepped inner pins can be designed with different types of stepped inner pins according to different bonding wire technology characteristics, such as the normal bonding method (norma 1 bond) and reverse bonding method (reverse bond). If the included angle of any pair of horizontal layers of the stepped inner pin is 90 degrees or slightly less than 90 degrees, it can be applied to the welding operation using the reverse wire method and can effectively improve the yield during welding. If the included angle of any pair of horizontal layers of the stepped inner pins is greater than 90 degrees, it can be applied to the welding operation using the normal wire bonding method. The stepped inner pins in this creation can be adjusted according to the height and number of stacked wafers and different technical characteristics of the bonding wire. This creation can effectively overcome the shortcomings of the conventional technology. This stepped inner pin only needs to be formed by one or more stamping using the lead in the original lead frame, which is the same as the general lead frame manufacturing process. And the multi-wafer packaging process and equipment of this creative structure are exactly the same as the single-wafer packaging, no additional packaging process is required.

第10頁 M240057 五、創作說明(7) 序和設備。可針對不同堆疊之晶片高度與數量調整内引腳 階層之高度和數量,使銲線結構最佳化,並降低銲線高度 和長度在模壓製程上減少不同銲線相碰觸及銲線偏移。另 可針對銲線技術特徵設計不同型式階梯狀内引腳,降低在 銲線上的困難度以提高多晶片構裝之可行性。Page 10 M240057 V. Creative Instructions (7) Preface and equipment. The height and number of inner pin levels can be adjusted for different stacked chip heights and numbers, to optimize the bonding wire structure, and reduce the bonding wire height and length. In the molding process, it reduces the contact between different bonding wires and bonding wire offset. In addition, different types of stepped inner pins can be designed according to the technical characteristics of the bonding wire, reducing the difficulty on the bonding wire to improve the feasibility of multi-chip assembly.

綜合上述,本創作提供一導線架型式堆疊多晶片構裝 結構。在本結構中晶片有電路的主動面均朝上且堆疊在導 線架晶片座的同一側。結構中導線架内引腳為連續性階梯 狀,而形狀有大於直角之形狀及略小於直角之形狀等型態 。大於直角形狀之階梯狀内引腳可適用於正常銲線法或反 向銲線法,而略小於直角之形狀階梯狀内引腳可適用反向 銲線法。晶片的堆疊黏結可使用固態膠黏結或液態膠黏結 固化。本創作可供堆疊相同或不同大小的晶片,亦可供堆 疊相同或不同功能之晶片。更進一步,本創作可應用在構 裝三個以上的晶片。In summary, the present invention provides a lead frame type stacked multi-chip structure. In this structure, the active surfaces of the wafers with circuits are all facing up and stacked on the same side of the leadframe wafer holder. In the structure, the lead in the lead frame has a continuous step shape, and the shape has a shape larger than a right angle and a shape slightly smaller than a right angle. Stepped inner pins that are larger than the right angle shape can be applied to the normal wire bonding method or reverse wire bonding method, and stepped inner pins that are slightly smaller than the right angle shape can be applied to the reverse wire bonding method. The stacking of wafers can be cured using solid or liquid glue. This creation can be used to stack wafers of the same or different sizes, as well as wafers of the same or different functions. Furthermore, this creation can be applied to constructing more than three wafers.

以上所述僅為本創作之較佳實施例而已,並非用以限 定本創作之申請專利範圍;凡其它未脫離本創作所揭示之 精神下所完成之等效改變或修飾,均應包含在下述之申請 專利範圍内。 M240057 圖式簡單說明 五、【圖式簡單說明】 第一圖係為習知堆疊式多晶片構裝的剖面示意圖。 第二A圖到第二C圖係根據本創作所揭露之堆疊式多晶 片構裝結構的剖面示意圖。 第三A圖到第三C圖係根據本創作所揭露之堆疊式多晶 片構裝結構的剖面不意圖。 主要部分之代表符號: 1 0導線架晶片座 1 2階梯狀引腳 1 4階梯狀引腳 1 6階梯狀引腳 1 8階梯狀引腳 20第一晶片 2 2第一金屬導線 2 4第一金屬導線 3 0弟二晶片 3 2第二金屬導線 3 4第二金屬導線 4 0第三晶片 4 2第三金屬導線 5 0黏著層The above is only a preferred embodiment of this creation, and is not intended to limit the scope of the patent application for this creation; all other equivalent changes or modifications made without departing from the spirit disclosed by this creation shall be included in the following Within the scope of patent application. M240057 Brief description of the drawings 5. [Simplified description of the drawings] The first diagram is a schematic cross-sectional view of a conventional stacked multi-chip structure. Figures 2A to 2C are schematic cross-sectional views of the stacked polycrystalline wafer structure disclosed in this work. Figures 3A to 3C are not intended to be cross-sections of the stacked polycrystalline wafer structure according to the present disclosure. Representative symbols of the main parts: 1 0 lead frame wafer holder 1 2 stepped pins 1 4 stepped pins 1 6 stepped pins 1 8 stepped pins 20 first chip 2 2 first metal wire 2 4 first Metal wire 3 0 Second chip 3 2 Second metal wire 3 4 Second metal wire 4 0 Third chip 4 2 Third metal wire 5 0 Adhesive layer

第12頁 M240057 圖式簡單說明 5 2黏著層 5 4黏著層 5 6黏著層 10 0導線架晶片座 10 2導線架引腳 1 2 0晶片 12 2第一金屬導線 13 0晶片 13 2第二金屬導線 1 5 0黏著層 #Page 12 M240057 Brief description of the drawing 5 2 Adhesive layer 5 4 Adhesive layer 5 6 Adhesive layer 10 0 Lead frame wafer holder 10 2 Lead frame pins 1 2 0 Chip 12 2 First metal wire 13 0 Chip 13 2 Second metal Wire 1 5 0 Adhesive layer #

第13頁Page 13

Claims (1)

M240057 六、申請專利範圍 1. 一種導線架堆疊式多晶片 一導線架晶片座; 複數個向上階梯狀引腳 其中每一該些階梯狀引腳分 一第一晶片在該導線架 一主動面係朝上並背對該導 複數個第一金屬導線連 平階層到該第一晶片的該主 該第一水平階層係接近該導 一第二晶片堆豐在該第 一主動面係朝上並背對該導 複數個第二金屬導線連 平階層到該第二晶片的該主 該第二水平階層係自該第一 2. 如申請專利範圍第1項之 上述任兩個水平階層的一夾 3. 如申請專利範圍第1項之 上述上述任兩個水平階層的 構裝結構至少包括: 環繞在該導線架晶片座周圍, 別有數個水平階層: 晶片座上,其中該第一晶片的 線架晶片座, 接該些階梯狀引腳的一第一水 動面,其中該些階梯狀引腳的 線架晶片座; 一晶片上,其中該第二晶片的 線架晶片座,以及 接該些階梯狀引腳的一第二水 動面,其中該些階梯狀引腳的 水平階層向上延伸。 堆疊式多晶片構裝結構,其中 角係大於或等於九十度。 堆疊式多晶片構裝結構,其中 一夾角係略小於九十度。 4.如申請專利範圍第1項之堆疊式多晶片構裝結構,更包 含一黏著層係用以將該第一晶片固定在該導線架晶片座上 M240057 六、申請專利範圍 5.如申請專利範圍第1項之堆疊式多晶片構裝結構,其中 更包含一黏著層係用以將該第二晶片堆疊在該第一晶片上 6. 如申請專利範圍第5項之堆疊式多晶片構裝結構,其中 上述之黏著層係可由下列選擇:一固態黏著層和一液態黏 著膠。 7. 如申請專利範圍第1項之堆疊式多晶片構裝結構,更包 含一第三晶片堆疊在該第二晶片上。 8. 如申請專利範圍第7項之堆疊式多晶片構裝結構,其中 上該第三晶片的一主動面係朝上並背對該導線架晶片座。 9. 如申請專利範圍第7項之堆疊式多晶片構裝結構,其中 更包含一黏著層係用以將該第三晶片堆疊在該第二晶片上 1 0 .如申請專利範圍第9項之堆疊式多晶片構裝結構,其中 上述之黏著層係可由下列選擇:一固態黏著層和一液態黏 著膠。 11. 一種導線架堆疊式多晶片構裝結構至少包括:M240057 6. Scope of patent application 1. A lead frame stacked multi-chip-a lead frame wafer holder; a plurality of upward stepped pins, each of which is divided into a first chip on an active surface of the lead frame A plurality of first metal wires are connected to the first level and back to the first level of the first chip. The first horizontal level is close to the second chip. The first active side is directed upward and back. The level of the plurality of second metal wires connected to the lead to the main and the second level of the second chip is from the first 2. As in any one of the above two levels of the patent application, a clip 3 For example, the above-mentioned structure structure of any two of the above two horizontal levels includes at least: surrounding the leadframe wafer holder, there are several horizontal levels: on the wafer holder, wherein the wireframe of the first wafer is A wafer holder, connected to the first hydrodynamic surface of the stepped pins, wherein the wireframe wafer holders of the stepped pins; on a wafer, the wireframe wafer holder of the second wafer, and connected to the wafer holders Stepped A second hydrodynamic surface of the pins, wherein the horizontal levels of the stepped pins extend upward. Stacked multi-chip structure, where the angle is greater than or equal to ninety degrees. The stacked multi-chip structure has an included angle slightly less than 90 degrees. 4. For example, the stacked multi-chip mounting structure in the scope of patent application No. 1 further includes an adhesive layer for fixing the first wafer on the lead frame wafer holder. M240057 6. Application for patent scope 5. For application for patent The stacked multi-chip structure of the first item of the scope, which further includes an adhesive layer for stacking the second wafer on the first wafer. 6. The stacked multi-chip structure of the fifth item of the patent application In the structure, the above adhesive layer can be selected from the following: a solid adhesive layer and a liquid adhesive. 7. If the stacked multi-chip structure of the first patent application scope includes a third chip stacked on the second chip. 8. The stacked multi-chip structure of claim 7 in which the active surface of the third chip is facing upward and facing away from the lead frame chip holder. 9. For example, the stacked multi-chip structure of the scope of patent application No. 7 further includes an adhesive layer for stacking the third wafer on the second wafer. In a stacked multi-chip structure, the above adhesive layer can be selected from the following: a solid adhesive layer and a liquid adhesive. 11. A lead frame stacked multi-chip structure includes at least: 第15頁 M240057 六、申請專利範圍 一導線架晶片座; 複數個向上階梯狀引腳環繞在該導線架晶片座周圍, 其中每一該些階梯狀引腳分別有數個水平階層: 一第一晶片在該導線架晶片座上,其中該第一晶片的 一主動面係朝上並背對該導線架晶片座; 複數個第一金屬導線連接該些階梯狀引腳的一第一水 平階層到該第一晶片的該主動面,其中該些階梯狀引腳的 該第一水平階層係接近該導線架晶片座; 一第二晶片堆疊在該第一晶片上,其中該第二晶片的 一主動面係朝上並背對該導線架晶片座; 複數個第二金屬導線連接該些階梯狀引腳的一第二水 平階層到該第二晶片的該主動面,其中該些階梯狀引腳的 該第二水平階層係自該第一水平階層向上延伸; 一第三晶片堆疊在該第二晶片上,其中該第三晶片的 一主動面係朝上並背對該導線架晶片座;以及 複數個第三金屬導線連接該些階梯狀引腳的一第三水 平階層到該第三晶片的該主動面,其中該些階梯狀引腳的 的該第三水平階層係自該第二水平階層向上延伸。 1 2.如申請專利範圍第11項之堆疊式多晶片構裝結構,其 中上述任兩個水平階層的一爽角係大於或等於九十度。 1 3.如申請專利範圍第1 1項之堆疊式多晶片構裝結構,其 中上述上述任兩個水平階層的一夾角係略小於九十度。 M240057 六、申請專利範圍 1 4.如申請專利範圍第1 1項之堆疊式多晶片構裝結構,更 包含一黏著層係用以將該第一晶片固定在該導線架晶片座 上。 1 5.如申請專利範圍第1 1之堆疊式多晶片構裝結構,其中 更包含一黏著層係用以將該第二晶片堆疊在該第一晶片上 1 6 .如申請專利範圍第1 5項之堆疊式多晶片構裝結構,其 中上述之黏著層係可由下列選擇:一固態黏著層和一液態 黏著膠。 1 7.如申請專利範圍第11項之堆疊式多晶片構裝結構,其 中更包含一黏著層係用以將該第三晶片堆疊在該第二晶片 上。 1 8.如申請專利範圍第1 7項之堆疊式多晶片構裝結構,其 中上述之黏著層係可由下列選擇:一固態黏著層和一液態 黏著膠。Page 15 M240057 VI. Patent application scope: a leadframe wafer holder; a plurality of upward stepped pins surround the leadframe wafer holder, each of which has a number of horizontal levels: a first chip On the leadframe wafer holder, an active surface of the first wafer faces upward and faces away from the leadframe wafer holder; a plurality of first metal wires connect a first horizontal layer of the stepped pins to the The active surface of the first wafer, wherein the first horizontal layer of the stepped pins is close to the leadframe wafer holder; a second wafer is stacked on the first wafer, and an active surface of the second wafer The second metal wires connect a second horizontal layer of the stepped pins to the active surface of the second chip, wherein the stepped pins are The second horizontal layer extends upward from the first horizontal layer; a third chip is stacked on the second chip, wherein an active surface of the third chip is facing upward and facing away from the lead frame wafer holder; A plurality of third metal wires connect a third horizontal layer of the stepped pins to the active surface of the third chip, wherein the third horizontal layer of the stepped pins is from the second horizontal layer Extend upwards. 1 2. According to the stacked multi-chip mounting structure of the scope of application for patent No. 11, wherein the cool angle of any of the two horizontal levels is greater than or equal to ninety degrees. 1 3. For the stacked multi-chip structure of item 11 in the scope of patent application, an angle between any of the above two horizontal levels is slightly less than ninety degrees. M240057 6. Scope of patent application 1 4. The stacked multi-chip structure of item 11 of the patent application scope further includes an adhesive layer for fixing the first chip on the lead frame chip holder. 1 5. The stacked multi-chip mounting structure according to the scope of patent application 1 1 further includes an adhesive layer for stacking the second wafer on the first wafer 16. As the scope of patent application scope 1 5 According to the stacked multi-chip structure, the above-mentioned adhesive layer can be selected from the following: a solid adhesive layer and a liquid adhesive. 1 7. The stacked multi-wafer structure according to item 11 of the application, further comprising an adhesive layer for stacking the third wafer on the second wafer. 1 8. The stacked multi-chip mounting structure according to item 17 of the scope of patent application, wherein the above adhesive layer can be selected from the following: a solid adhesive layer and a liquid adhesive. 第17頁Page 17
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