TWI853469B - Substrate processing method and substrate processing apparatus - Google Patents

Substrate processing method and substrate processing apparatus Download PDF

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TWI853469B
TWI853469B TW112107183A TW112107183A TWI853469B TW I853469 B TWI853469 B TW I853469B TW 112107183 A TW112107183 A TW 112107183A TW 112107183 A TW112107183 A TW 112107183A TW I853469 B TWI853469 B TW I853469B
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nozzle
liquid
substrate
processing
aforementioned
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TW202343630A (en
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谷川紘太
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日商斯庫林集團股份有限公司
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Abstract

A substrate processing method and a substrate processing apparatus are provided. The substrate processing method includes:(Step S12) ejecting a preceding processing liquid toward a held substrate (W) from an ejection orifice (41a) of a preceding nozzle (41) through start of supply of the preceding processing liquid to the preceding nozzle (41); (Step S14) ejecting a succeeding processing liquid toward the held substrate (W) from an ejection orifice (42a) of a succeeding nozzle (42) through start of supply of the succeeding processing liquid to the succeeding nozzle (42); (Step S15) detecting start of ejection of the succeeding processing liquid from the ejection orifice (42a) of the succeeding nozzle (42); and (Step S16) stopping the supply of the preceding processing liquid to the preceding nozzle (41) in response to detection of the start of the ejection of the succeeding processing liquid.

Description

基板處理方法以及基板處理裝置Substrate processing method and substrate processing device

本發明係有關於一種基板處理方法以及基板處理裝置。The present invention relates to a substrate processing method and a substrate processing device.

已知有一種葉片式的基板處理裝置,係用以對基板噴出處理液從而處理基板。葉片式的基板處理裝置係藉由處理液逐片地處理基板。例如,於專利文獻1揭示有一種葉片式的基板處理裝置。A blade-type substrate processing device is known, which is used to spray a processing liquid onto a substrate to process the substrate. The blade-type substrate processing device processes the substrate piece by piece by the processing liquid. For example, Patent Document 1 discloses a blade-type substrate processing device.

專利文獻1的基板處理裝置係包含:有機溶劑閥,係用以將有機溶劑配管打開以及關閉;以及疏水化劑閥,係用以將疏水化劑配管打開以及關閉。從有機溶劑閥的關閉動作開始起經過延遲時間後,在尚未完全地停止從有機溶劑噴嘴噴出IPA(isopropyl alcohol;異丙醇)的狀態下開始疏水化劑閥的打開動作。結果,能抑制或者防止因為有機溶劑與疏水化劑之間的干擾導致發生液體飛濺,且無須使基板的液體瀝乾即能使有機溶液所為的基板處理移行至疏水化劑所為的基板處理。 [先前技術文獻] [專利文獻] The substrate processing device of patent document 1 includes: an organic solvent valve for opening and closing the organic solvent piping; and a hydrophobic agent valve for opening and closing the hydrophobic agent piping. After a delay time from the start of the closing action of the organic solvent valve, the opening action of the hydrophobic agent valve is started before the spraying of IPA (isopropyl alcohol) from the organic solvent nozzle has completely stopped. As a result, liquid splashing caused by interference between the organic solvent and the hydrophobic agent can be suppressed or prevented, and the substrate processing performed by the organic solution can be transferred to the substrate processing performed by the hydrophobic agent without draining the liquid of the substrate. [Prior art literature] [Patent literature]

[專利文獻1]日本特開2019-192799號公報。[Patent Document 1] Japanese Patent Application Publication No. 2019-192799.

[發明所欲解決之課題][The problem that the invention wants to solve]

然而,在專利文獻1的基板處理裝置中,作業者需要設定使有機溶液閥(先行閥)的關閉動作開始後直至使疏水化劑閥(後行閥)的打開動作開始為止之期間(延遲時間)。因此,例如每次處理液的噴出流量變動時發生用以設定延遲時間之作業。處理液的噴出流量係例如因為設置有基板處理裝置之工廠的能源用度的變動導致變動。如此,在專利文獻1的基板處理裝置中,在基板處理裝置的設置後亦需要用以設定延遲時間之作業。因此,若考慮作業者的負擔,則有進一步改良的餘地。However, in the substrate processing apparatus of Patent Document 1, the operator needs to set the period (delay time) from the start of the closing action of the organic solution valve (pre-valve) to the start of the opening action of the hydrophobic agent valve (post-valve). Therefore, for example, the operation for setting the delay time occurs each time the spray flow rate of the processing liquid changes. The spray flow rate of the processing liquid changes, for example, due to changes in the energy cost of the factory where the substrate processing apparatus is installed. Thus, in the substrate processing apparatus of Patent Document 1, the operation for setting the delay time is also required after the substrate processing apparatus is installed. Therefore, if the burden on the operator is taken into consideration, there is room for further improvement.

本發明係有鑑於上文所說明的課題而研創,目的在於提供一種能減輕作業者的負擔之基板處理方法以及基板處理裝置。 [用以解決課題的手段] The present invention is developed in view of the above-described subject, and aims to provide a substrate processing method and substrate processing device that can reduce the burden on operators. [Means for solving the subject]

依據本發明的一個態樣,基板處理方法係用以藉由處理液處理基板,並包含:保持前述基板之工序;開始朝先行噴嘴(preceding nozzle)供給先行處理液並從前述先行噴嘴的噴出口朝向被保持的前述基板噴出前述先行處理液之工序;開始朝後行噴嘴(succeeding nozzle)供給後行處理液並從前述後行噴嘴的噴出口朝向被保持的前述基板噴出前述後行處理液之工序;檢測工序,係檢測開始從前述後行噴嘴的前述噴出口噴出前述後行處理液;以及停止工序,係因應檢測到開始噴出前述後行處理液之事態,停止朝前述先行噴嘴供給前述先行處理液。According to one aspect of the present invention, a substrate processing method is used to process a substrate by means of a processing liquid, and includes: a process of holding the aforementioned substrate; a process of starting to supply a preceding processing liquid to a preceding nozzle and spraying the aforementioned preceding processing liquid from the nozzle outlet of the aforementioned preceding nozzle toward the aforementioned substrate being held; a process of starting to supply a succeeding processing liquid to a succeeding nozzle and spraying the aforementioned succeeding processing liquid from the nozzle outlet of the aforementioned succeeding nozzle toward the aforementioned substrate being held; a detection process of detecting the start of spraying the aforementioned succeeding processing liquid from the aforementioned nozzle outlet of the aforementioned succeeding nozzle; and a stopping process of stopping the supply of the aforementioned preceding processing liquid to the aforementioned preceding nozzle in response to detecting the start of spraying of the aforementioned succeeding processing liquid.

在實施形態之一中,在前述檢測工序中檢測已經從前述後行噴嘴的前述噴出口噴出前述後行處理液之事態。In one embodiment, in the detection step, it is detected that the subsequent processing liquid has been ejected from the ejection outlet of the subsequent ejection nozzle.

在實施形態之一中,在前述檢測工序中檢測前述後行處理液已經到達至前述後行噴嘴的前述噴出口之事態。In one embodiment, in the detection step, it is detected that the subsequent processing liquid has reached the ejection outlet of the subsequent nozzle.

在實施形態之一中,在前述檢測工序中檢測前述後行處理液已經到達至前述後行噴嘴的前述噴出口的附近之事態。In one embodiment, in the detection step, it is detected that the subsequent processing liquid has reached the vicinity of the ejection outlet of the subsequent nozzle.

在實施形態之一中,在前述檢測工序中藉由拍攝裝置檢測開始噴出前述後行處理液。In one embodiment, in the detection step, the start of ejection of the post-processing liquid is detected by a photographing device.

在實施形態之一中,在前述檢測工序中藉由光感測器檢測開始噴出前述後行處理液。In one embodiment, in the detection step, the start of spraying of the post-processing liquid is detected by a photo sensor.

在實施形態之一中,在前述檢測工序中藉由電容感測器檢測開始噴出前述後行處理液。In one embodiment, in the detection step, the ejection of the post-processing liquid is started by detecting with a capacitance sensor.

在實施形態之一中,在前述停止工序中在檢測開始噴出前述後行處理液後直至經過預定時間後,停止朝前述先行噴嘴供給前述先行處理液。In one embodiment, in the stop step, after the start of ejection of the post-processing liquid is detected and until a predetermined time has passed, the supply of the post-processing liquid to the post-processing nozzle is stopped.

在實施形態之一中,前述基板處理方法係進一步包含下述工序:基於供給時間以及既定時間來調整前述先行處理液的開始供給時序,前述供給時間係顯示從開始供給前述先行處理液起至前述停止工序中停止供給前述先行處理液為止之時間間隔,前述既定時間係制定了用以供給前述先行處理液之時間間隔。In one embodiment, the substrate processing method further includes the following steps: adjusting the start supply timing of the preceding treatment liquid based on a supply time and a set time, wherein the supply time indicates the time interval from the start of supplying the preceding treatment liquid to the stop of supplying the preceding treatment liquid in the stopping step, and the set time is a time interval set for supplying the preceding treatment liquid.

在實施形態之一中,前述基板處理方法係進一步地包含下述工序:取得前述先行處理液的停止供給時序。In one embodiment, the substrate processing method further comprises the following step: obtaining a timing for stopping supply of the preceding processing liquid.

在實施形態之一中,前述基板處理方法係進一步地包含下述工序:檢測開始從前述先行噴嘴的前述噴出口噴出前述先行處理液。In one embodiment, the substrate processing method further includes the following step: detecting the start of ejecting the preliminary processing liquid from the ejection port of the preliminary nozzle.

依據本發明的一個態樣,基板處理裝置係用以藉由處理液處理基板,並具備基板保持部、先行噴嘴、先行閥、後行噴嘴、後行閥、檢測部以及控制部。前述基板保持部係保持前述基板。前述先行噴嘴係具有噴出口,從前述噴出口朝向被前述基板保持部保持的前述基板噴出先行處理液。前述先行閥係控制朝前述先行噴嘴供給前述先行處理液以及停止朝前述先行噴嘴供給前述先行處理液。前述後行噴嘴係具有噴出口,從前述噴出口朝向被前述基板保持部保持的前述基板噴出後行處理液。前述後行閥係控制朝前述後行噴嘴供給前述後行處理液以及停止朝前述後行噴嘴供給前述後行處理液。前述檢測部係檢測開始從前述後行噴嘴的前述噴出口噴出前述後行處理液。前述控制部係控制前述先行閥開始朝前述先行噴嘴供給前述先行處理液後,控制前述後行閥開始朝前述後行噴嘴供給前述後行處理液。前述控制部係因應前述檢測部檢測到開始噴出前述後行處理液之事態執行關閉動作控制處理,前述關閉動作控制處理係控制前述先行閥停止供給前述先行處理液。According to one aspect of the present invention, a substrate processing device is used to process a substrate by a processing liquid, and comprises a substrate holding portion, a leading nozzle, a leading valve, a trailing nozzle, a trailing valve, a detection portion, and a control portion. The substrate holding portion holds the substrate. The leading nozzle has a nozzle outlet, and the leading processing liquid is sprayed from the nozzle outlet toward the substrate held by the substrate holding portion. The leading valve controls the supply of the leading processing liquid to the leading nozzle and stops the supply of the leading processing liquid to the leading nozzle. The trailing nozzle has a nozzle outlet, and the trailing processing liquid is sprayed from the nozzle outlet toward the substrate held by the substrate holding portion. The after-travel valve controls the supply of the after-travel treatment liquid to the after-travel nozzle and stops the supply of the after-travel treatment liquid to the after-travel nozzle. The detection unit detects the start of spraying of the after-travel treatment liquid from the nozzle outlet of the after-travel nozzle. After the control unit controls the fore-travel valve to start supplying the fore-travel treatment liquid to the fore-travel nozzle, the control unit controls the after-travel valve to start supplying the fore-travel treatment liquid to the fore-travel nozzle. The control unit performs a closing action control process in response to the detection by the detection unit of the start of spraying of the after-travel treatment liquid, and the closing action control process controls the fore-travel valve to stop supplying the fore-travel treatment liquid.

在實施形態之一中,前述檢測部係檢測已經從前述後行噴嘴的前述噴出口噴出前述後行處理液之事態。In one embodiment, the detection section detects whether the subsequent processing liquid has been ejected from the ejection outlet of the subsequent ejection nozzle.

在實施形態之一中,前述檢測部係檢測前述後行處理液已經到達至前述後行噴嘴的前述噴出口之事態。In one embodiment, the detection unit detects whether the subsequent processing liquid has reached the ejection outlet of the subsequent nozzle.

在實施形態之一中,前述檢測部係檢測前述後行處理液已經到達至前述後行噴嘴的前述噴出口的附近之事態。In one embodiment, the detection unit detects that the subsequent processing liquid has reached the vicinity of the ejection outlet of the subsequent nozzle.

在實施形態之一中,前述檢測部係包含:拍攝裝置,係檢測開始噴出前述後行處理液。In one embodiment, the detection unit includes a photographing device for detecting the start of spraying of the post-processing liquid.

在實施形態之一中,前述檢測部係包含:光感測器,係檢測開始噴出前述後行處理液。In one embodiment, the detection unit includes a photo sensor for detecting the start of spraying of the post-processing liquid.

在實施形態之一中,前述檢測部係包含:電容感測器,係檢測開始噴出前述後行處理液。In one embodiment, the detection unit includes a capacitance sensor for detecting the start of spraying of the post-processing liquid.

在實施形態之一中,前述控制部係在前述檢測部檢測開始噴出前述後行處理液後直至經過預定時間後,控制前述先行閥停止供給前述先行處理液。In one embodiment, the control unit controls the lead valve to stop supplying the lead-in treatment liquid after a predetermined time has passed since the detection unit detects the start of spraying of the follow-in treatment liquid.

在實施形態之一中,前述控制部係基於供給時間以及既定時間來調整前述先行處理液的開始供給時序,前述供給時間係顯示從開始供給前述先行處理液起至前述關閉動作控制處理所為的停止供給前述先行處理液為止之時間間隔,前述既定時間係制定了用以供給前述先行處理液之時間間隔。In one embodiment, the control unit adjusts the start timing of supplying the preceding treatment liquid based on a supply time and a set time, wherein the supply time indicates the time interval from the start of supplying the preceding treatment liquid to the stop of supplying the preceding treatment liquid by the closing action control process, and the set time is a time interval set for supplying the preceding treatment liquid.

在實施形態之一中,前述控制部係取得前述先行處理液的停止供給時序。In one embodiment, the control unit obtains a timing for stopping supply of the preceding treatment liquid.

在實施形態之一中,前述檢測部係檢測開始從前述先行噴嘴的前述噴出口噴出前述先行處理液。In one embodiment, the detection section detects the start of ejection of the preliminary treatment liquid from the ejection outlet of the preliminary ejection nozzle.

在實施形態之一中,前述基板處理裝置係進一步地具備複數個處理室。複數個前述處理室係分別收容前述基板保持部、前述先行噴嘴以及前述後行噴嘴。前述控制部係針對每個前述處理室執行前述關閉動作控制處理。 [發明功效] In one embodiment, the substrate processing device further includes a plurality of processing chambers. The plurality of processing chambers respectively accommodate the substrate holding portion, the leading nozzle, and the trailing nozzle. The control portion performs the closing action control process for each of the processing chambers. [Effect of the invention]

依據本發明的基板處理方法以及基板處理裝置,能減輕作業者的負擔。According to the substrate processing method and substrate processing apparatus of the present invention, the burden on operators can be reduced.

以下,參照圖式(圖1至圖28)說明本發明的基板處理方法以及基板處理裝置的實施形態。然而,本發明並未限定於以下的實施形態,只要不脫離本發明的精神則能夠在各種態樣中實施。此外,針對說明重複之部分會有適當地省略說明之情形。此外,圖中針對相同或者相當的部分附上相同的元件符號且不重複說明。Hereinafter, the implementation forms of the substrate processing method and substrate processing device of the present invention will be described with reference to the drawings (FIG. 1 to FIG. 28). However, the present invention is not limited to the following implementation forms, and can be implemented in various forms as long as it does not deviate from the spirit of the present invention. In addition, the description of the repeated parts will be appropriately omitted. In addition, the same component symbols are attached to the same or equivalent parts in the figures, and the description is not repeated.

在本發明的基板處理方法以及基板處理裝置中成為基板處理的對象之「基板」係能夠應用半導體晶圓、光罩(photomask)用玻璃基板、液晶顯示用玻璃基板、電漿顯示用玻璃基板、場發射顯示器(FED;field emission display)用基板、光碟用基板、磁碟用基板以及光磁碟用基板等各種基板。以下雖然主要以圓盤狀的半導體晶圓作為基板處理的對象之情形作為例子來說明本發明的實施形態,然而本發明的基板處理方法以及基板處理裝置亦同樣能夠應用於上文所說明的半導體晶圓以外的各種基板。此外,基板的形狀亦未限定於圓盤狀,本發明的基板處理方法以及基板處理裝置係能夠應用於各種形狀的基板。In the substrate processing method and substrate processing device of the present invention, the "substrate" that is the object of substrate processing can be applied to various substrates such as semiconductor wafers, glass substrates for photomasks, glass substrates for liquid crystal displays, glass substrates for plasma displays, substrates for field emission displays (FED), substrates for optical disks, substrates for magnetic disks, and substrates for magneto-optical disks. Although the following mainly uses a disk-shaped semiconductor wafer as an example of the object of substrate processing to illustrate the implementation form of the present invention, the substrate processing method and substrate processing device of the present invention can also be applied to various substrates other than the semiconductor wafers described above. In addition, the shape of the substrate is not limited to a disk shape, and the substrate processing method and substrate processing device of the present invention can be applied to substrates of various shapes.

[實施形態一] 以下,參照圖1至圖12說明本發明的實施形態一。首先,參照圖1說明本實施形態的基板處理裝置100。圖1係本實施形態的基板處理裝置100的示意圖。詳細而言,圖1係基板處理裝置100的示意性的俯視圖。基板處理裝置100係藉由處理液處理基板W。更具體而言,基板處理裝置100為葉片式的裝置,用以逐片地處理基板W。以下,會有將處理基板W之動作稱為「基板處理」之情形。 [Implementation Form One] Hereinafter, the implementation form one of the present invention will be described with reference to FIGS. 1 to 12. First, the substrate processing device 100 of the present implementation form will be described with reference to FIG. 1. FIG. 1 is a schematic diagram of the substrate processing device 100 of the present implementation form. Specifically, FIG. 1 is a schematic top view of the substrate processing device 100. The substrate processing device 100 processes the substrate W by a processing liquid. More specifically, the substrate processing device 100 is a blade-type device for processing the substrate W piece by piece. Hereinafter, the action of processing the substrate W may be referred to as "substrate processing".

如圖1所示,基板處理裝置100係具備複數個處理部1、流體櫃(fluid cabinet)100A、複數個流體箱(fluid box)100B、複數個裝載埠(load port)LP、索引機器人(indexer robot)IR、中心機器人(center robot)CR以及控制裝置101。As shown in FIG. 1 , the substrate processing apparatus 100 includes a plurality of processing units 1, a fluid cabinet 100A, a plurality of fluid boxes 100B, a plurality of load ports LP, an indexer robot IR, a center robot CR, and a control device 101.

裝載埠LP係分別層疊地收容複數片基板W。例如,裝載埠LP係收容複數片圖案晶圓(pattern wafer)。圖案晶圓為於表面形成有由溝槽以及層疊構造體所構成的細微的圖案之基板(晶圓)。層疊構造體係具有於層疊構造體的厚度方向交互地層疊有氮化矽膜以及氧化矽膜而成的構造。The loading port LP is used to store a plurality of substrates W in a stacked manner. For example, the loading port LP is used to store a plurality of pattern wafers. The pattern wafer is a substrate (wafer) having a fine pattern formed on the surface thereof by grooves and a stacked structure. The stacked structure has a structure in which silicon nitride films and silicon oxide films are alternately stacked in the thickness direction of the stacked structure.

索引機器人IR係在裝載埠LP與中心機器人CR之間搬運基板W。中心機器人CR係在索引機器人IR與處理部1之間搬運基板W。此外,亦可為以下的裝置構成:於索引機器人IR與中心機器人CR之間設置用以暫時性地載置基板W之載置台(路徑(path)),在索引機器人IR與中心機器人CR之間隔著載置台間接地接取並傳遞基板W。The index robot IR transfers the substrate W between the loading port LP and the center robot CR. The center robot CR transfers the substrate W between the index robot IR and the processing unit 1. In addition, the following device configuration may be used: a stage (path) for temporarily placing the substrate W is provided between the index robot IR and the center robot CR, and the substrate W is indirectly received and transferred between the index robot IR and the center robot CR via the stage.

複數個處理部1係形成複數個塔TW(在圖1中為四個塔TW)。複數個塔TW係以俯視觀看時圍繞中心機器人CR之方式配置。各個塔TW係包含上下地層疊的複數個處理部1(在圖1中為三個處理部1)。The plurality of processing units 1 form a plurality of towers TW (four towers TW in FIG. 1 ). The plurality of towers TW are arranged so as to surround the central robot CR when viewed from above. Each tower TW includes a plurality of processing units 1 (three processing units 1 in FIG. 1 ) stacked one above the other.

流體櫃100A係收容處理液。流體箱100B係分別與複數個塔TW中的一個塔TW對應。流體櫃100A內的處理液係經由任一個流體箱100B被供給至與流體箱100B對應的塔TW所包含的全部的處理部1。The fluid tank 100A stores the treatment liquid. The fluid boxes 100B correspond to one of the plurality of towers TW. The treatment liquid in the fluid tank 100A is supplied to all the treatment sections 1 included in the tower TW corresponding to the fluid tank 100B through any one of the fluid boxes 100B.

處理部1係分別將處理液供給至基板W的上表面。處理液係包含藥液以及清洗(rinse)液。在本實施形態中,藥液係包含第一藥液以及第二藥液。此外,清洗液係包含第一清洗液以及第二清洗液。The processing unit 1 supplies the processing liquid to the upper surface of the substrate W. The processing liquid includes a chemical liquid and a rinse liquid. In this embodiment, the chemical liquid includes a first chemical liquid and a second chemical liquid. In addition, the rinse liquid includes a first rinse liquid and a second rinse liquid.

第一藥液係例如為DHF(dilute hydrofluoric acid;稀釋氫氟酸)。DHF為經過稀釋的氫氟酸(hydrofluoric acid)。藉由DHF從基板W去除自然氧化膜。The first chemical solution is, for example, DHF (dilute hydrofluoric acid). DHF is diluted hydrofluoric acid. The natural oxide film is removed from the substrate W by DHF.

第二藥液係例如為SC1 (Standard clean-1;第一標準清洗液,亦即氨水過氧化氫水混合液(ammonia-hydrogen peroxide))。SC1為包含「NH 4OH」、「H 2O 2」以及「H 2O」之混合液。當SC1被供給至基板W的上表面時,去除附著於基板W的上表面的微粒(particle)。更具體而言,SC1係被使用於有機物的溶解去除以及非溶解性的微粒的剝離去除。 The second chemical solution is, for example, SC1 (Standard clean-1; the first standard cleaning solution, i.e., ammonia-hydrogen peroxide mixed solution). SC1 is a mixed solution containing "NH 4 OH", "H 2 O 2 " and "H 2 O". When SC1 is supplied to the upper surface of the substrate W, particles attached to the upper surface of the substrate W are removed. More specifically, SC1 is used for dissolving and removing organic matter and stripping and removing insoluble particles.

清洗液係例如為超純水、碳酸水、電解離子水、氫水、臭氧水、氨水或者經過稀釋的鹽酸水(例如濃度為10ppm至100ppm左右的鹽酸水)。超純水係例如為去離子水(DIW;deionized water)。在本實施形態中,第一清洗液以及第二清洗液為相同種類的清洗液。The cleaning liquid is, for example, ultrapure water, carbonated water, electrolyzed ionized water, hydrogen water, ozone water, ammonia water, or diluted hydrochloric acid water (for example, hydrochloric acid water with a concentration of about 10 ppm to 100 ppm). Ultrapure water is, for example, deionized water (DIW). In this embodiment, the first cleaning liquid and the second cleaning liquid are the same type of cleaning liquid.

處理部1係將第一藥液、第二藥液、第一清洗液以及第二清洗液以第一藥液、第一清洗液、第二清洗液、第二藥液以及第二清洗液的順序供給至基板W。例如,處理部1亦可將DHF、SC1、第一清洗液(去離子水)以及第二清洗液(去離子水)以DHF、第一清洗液(去離子水)、第二清洗液(去離子水)、SC1以及第二清洗液(去離子水)的順序供給至基板W。The processing unit 1 supplies the first chemical liquid, the second chemical liquid, the first cleaning liquid, and the second cleaning liquid in the order of the first chemical liquid, the first cleaning liquid, the second cleaning liquid, the second chemical liquid, and the second cleaning liquid to the substrate W. For example, the processing unit 1 may also supply DHF, SC1, the first cleaning liquid (deionized water), and the second cleaning liquid (deionized water) to the substrate W in the order of DHF, the first cleaning liquid (deionized water), the second cleaning liquid (deionized water), SC1, and the second cleaning liquid (deionized water).

接著,說明控制裝置101。控制裝置101係控制基板處理裝置100的各部的動作。例如,控制裝置101係控制裝載埠LP、索引機器人IR以及中心機器人CR。控制裝置101係包含控制部102以及記憶部103。Next, the control device 101 is described. The control device 101 controls the operation of each unit of the substrate processing device 100. For example, the control device 101 controls the loading port LP, the index robot IR, and the center robot CR. The control device 101 includes a control unit 102 and a memory unit 103.

控制部102係基於記憶於記憶部103的各種資訊來控制基板處理裝置100的各部的動作。控制部102係具有例如處理器。控制部102亦可具有CPU (Central Processing Unit;中央處理單元)或者MPU(Micro Processing Unit;微處理單元)作為處理器。或者,控制部102亦可具有泛用的運算機或者專用的運算器。The control unit 102 controls the operation of each unit of the substrate processing device 100 based on various information stored in the memory unit 103. The control unit 102 has, for example, a processor. The control unit 102 may also have a CPU (Central Processing Unit) or an MPU (Micro Processing Unit) as a processor. Alternatively, the control unit 102 may also have a general-purpose computer or a dedicated computer.

記憶部103係記憶用以控制基板處理裝置100的動作之各種資訊。例如,記憶部103係記憶資料以及電腦程式。各種資訊(資料)係例如包含處方資料(recipe data)。處方資料係顯示用以規定基板W的處理內容以及處理順序之處方。於處方設定有基板處理的執行時的條件(設定值)。The memory unit 103 stores various information for controlling the operation of the substrate processing apparatus 100. For example, the memory unit 103 stores data and computer programs. The various information (data) includes, for example, recipe data. The recipe data is a recipe for specifying the processing content and processing sequence of the substrate W. The conditions (setting values) for executing the substrate processing are set in the recipe.

記憶部103係具有主記憶裝置。主記憶裝置係例如為半導體記憶體。記憶部103亦可進一步地具有輔助記憶裝置。輔助記憶裝置係例如包含半導體記憶體以及硬碟驅動機(hard disk drive)中的至少一者。記憶部103亦可包含可移媒體(removable media)。The memory unit 103 has a main memory device. The main memory device is, for example, a semiconductor memory. The memory unit 103 may further have an auxiliary memory device. The auxiliary memory device includes, for example, at least one of a semiconductor memory and a hard disk drive. The memory unit 103 may also include a removable media.

接著,參照圖1以及圖2進一步地說明本實施形態的基板處理裝置100。圖2係示意性地顯示本實施形態的基板處理裝置100所包含的處理部1的構成之俯視圖。Next, the substrate processing apparatus 100 of the present embodiment will be further described with reference to Fig. 1 and Fig. 2. Fig. 2 is a top view schematically showing the structure of the processing unit 1 included in the substrate processing apparatus 100 of the present embodiment.

如圖2所示,處理部1係具有處理室2、基板保持部3、第一噴嘴41至第四噴嘴44、第一噴嘴移動機構5、第二噴嘴移動機構6、液體接住部9、拍攝裝置110以及照明裝置111。基板保持部3、第一噴嘴41至第四噴嘴44、第一噴嘴移動機構5、第二噴嘴移動機構6、液體接住部9、拍攝裝置110以及照明裝置111係設置於每個處理部1(處理室2)。此外,拍攝裝置110為「檢測部」的一例。As shown in FIG2 , the processing unit 1 includes a processing chamber 2, a substrate holding unit 3, first nozzles 41 to 44, a first nozzle moving mechanism 5, a second nozzle moving mechanism 6, a liquid receiving unit 9, a camera 110, and a lighting device 111. The substrate holding unit 3, the first nozzles 41 to 44, the first nozzle moving mechanism 5, the second nozzle moving mechanism 6, the liquid receiving unit 9, the camera 110, and the lighting device 111 are provided in each processing unit 1 (processing chamber 2). In addition, the camera 110 is an example of a "detection unit".

基板W係被搬入至處理室2的內部並在處理室2的內部被處理。處理室2係具有略箱形狀。處理室2係收容基板保持部3、第一噴嘴41至第四噴嘴44、第一噴嘴移動機構5、第二噴嘴移動機構6以及液體接住部9。處理室2係例如為腔室(chamber)。The substrate W is carried into the processing chamber 2 and processed therein. The processing chamber 2 has a roughly box-like shape. The processing chamber 2 accommodates the substrate holding portion 3, the first nozzle 41 to the fourth nozzle 44, the first nozzle moving mechanism 5, the second nozzle moving mechanism 6, and the liquid receiving portion 9. The processing chamber 2 is, for example, a chamber.

基板保持部3係保持基板W。基板保持部3的動作係被控制裝置101(控制部102)控制。更具體而言,基板保持部3係以水平的姿勢保持基板W。基板保持部3係例如為自轉夾具(spin chuck)。基板保持部3亦可具有自轉基座(spin base)31以及複數個夾具(chuck)構件32(在圖2中為四個夾具構件32)。The substrate holding part 3 holds the substrate W. The operation of the substrate holding part 3 is controlled by the control device 101 (control part 102). More specifically, the substrate holding part 3 holds the substrate W in a horizontal position. The substrate holding part 3 is, for example, a spin chuck. The substrate holding part 3 may also have a spin base 31 and a plurality of chuck components 32 (four chuck components 32 in FIG. 2 ).

自轉基座31為略圓板狀,以水平的姿勢支撐複數個夾具構件32。複數個夾具構件32係配置於自轉基座31的周緣部。複數個夾具構件32係夾持基板W的周緣部。藉由複數個夾具構件32以水平的姿勢保持基板W。複數個夾具構件32的動作係被控制裝置101(控制部102)控制。複數個夾具構件32係以基板W的中心與自轉基座31的中心CP1一致之方式配置。The rotation base 31 is in the shape of a roughly circular plate and supports a plurality of clamp members 32 in a horizontal posture. The plurality of clamp members 32 are arranged at the periphery of the rotation base 31. The plurality of clamp members 32 clamp the periphery of the substrate W. The substrate W is held in a horizontal posture by the plurality of clamp members 32. The movement of the plurality of clamp members 32 is controlled by the control device 101 (control unit 102). The plurality of clamp members 32 are arranged in such a way that the center of the substrate W is consistent with the center CP1 of the rotation base 31.

此外,如參照圖3且於後述般,自轉基座31係以自轉基座31的中心CP1作為旋轉中心旋轉。因此,基板W係以基板W的中心作為旋轉中心旋轉。3 and described later, the rotation base 31 rotates with the center CP1 of the rotation base 31 as the rotation center. Therefore, the substrate W rotates with the center of the substrate W as the rotation center.

接著,說明第一噴嘴41、第二噴嘴42以及第一噴嘴移動機構5。Next, the first nozzle 41, the second nozzle 42, and the first nozzle moving mechanism 5 will be described.

第一噴嘴41係朝向被基板保持部3保持的基板W的上表面噴出第一藥液(例如DHF)。結果,第一藥液被供給至基板W,於基板W的上表面形成有第一藥液的液膜。具體而言,第一藥液係從第一噴嘴41的前端噴出。此外,第一藥液係從第一噴嘴41朝向旋轉中的基板W噴出。The first nozzle 41 sprays a first chemical liquid (e.g., DHF) toward the upper surface of the substrate W held by the substrate holding portion 3. As a result, the first chemical liquid is supplied to the substrate W, and a liquid film of the first chemical liquid is formed on the upper surface of the substrate W. Specifically, the first chemical liquid is sprayed from the front end of the first nozzle 41. In addition, the first chemical liquid is sprayed from the first nozzle 41 toward the substrate W that is rotating.

第二噴嘴42係朝向被基板保持部3保持的基板W的上表面噴出第一清洗液(例如去離子水)。結果,第一清洗液被供給至基板W,於基板W的上表面形成有第一清洗液的液膜。具體而言,第一清洗液係從第二噴嘴42的前端噴出。此外,第一清洗液係從第二噴嘴42朝向旋轉中的基板W噴出。The second nozzle 42 sprays a first cleaning liquid (e.g., deionized water) toward the upper surface of the substrate W held by the substrate holding portion 3. As a result, the first cleaning liquid is supplied to the substrate W, and a liquid film of the first cleaning liquid is formed on the upper surface of the substrate W. Specifically, the first cleaning liquid is sprayed from the front end of the second nozzle 42. In addition, the first cleaning liquid is sprayed from the second nozzle 42 toward the substrate W that is rotating.

第一噴嘴移動機構5係使第一噴嘴41以及第二噴嘴42同時移動。第一噴嘴移動機構5的動作係被控制裝置101(控制部102)控制。更詳細而言,第一噴嘴移動機構5係使第一噴嘴41以及第二噴嘴42在第一退避區域與處理位置之間移動。第一退避區域為基板保持部3的外側的區域。更詳細而言,第一退避區域為液體接住部9的外側的區域。圖2係顯示位於第一退避區域的第一噴嘴41以及第二噴嘴42。在本實施形態中,第一噴嘴41以及第二噴嘴42的處理位置皆為與基板W的中心對向之位置。第一噴嘴41以及第二噴嘴42皆從基板W的上方朝向基板W噴出處理液。The first nozzle moving mechanism 5 moves the first nozzle 41 and the second nozzle 42 simultaneously. The operation of the first nozzle moving mechanism 5 is controlled by the control device 101 (control unit 102). In more detail, the first nozzle moving mechanism 5 moves the first nozzle 41 and the second nozzle 42 between the first retreat area and the processing position. The first retreat area is an area on the outside of the substrate holding portion 3. In more detail, the first retreat area is an area on the outside of the liquid receiving portion 9. Figure 2 shows the first nozzle 41 and the second nozzle 42 located in the first retreat area. In this embodiment, the processing positions of the first nozzle 41 and the second nozzle 42 are both positions opposite to the center of the substrate W. The first nozzle 41 and the second nozzle 42 both spray the processing liquid toward the substrate W from above the substrate W.

第一噴嘴移動機構5亦可具有第一噴嘴臂51、第二噴嘴臂52、第一噴嘴基台53以及第一噴嘴移動部54。第一噴嘴基台53係於鉛直方向延伸。第一噴嘴臂51以及第二噴嘴臂52的基端部係結合至第一噴嘴基台53。第一噴嘴臂51以及第二噴嘴臂52係從第一噴嘴基台53朝水平方向延伸。在本實施形態中,第一噴嘴臂51以及第二噴嘴臂52係配置於水平面內彼此相鄰的位置,且彼此平行地延伸。The first nozzle moving mechanism 5 may also include a first nozzle arm 51, a second nozzle arm 52, a first nozzle base 53, and a first nozzle moving portion 54. The first nozzle base 53 extends in the vertical direction. The base ends of the first nozzle arm 51 and the second nozzle arm 52 are coupled to the first nozzle base 53. The first nozzle arm 51 and the second nozzle arm 52 extend in the horizontal direction from the first nozzle base 53. In the present embodiment, the first nozzle arm 51 and the second nozzle arm 52 are arranged at adjacent positions in a horizontal plane and extend in parallel with each other.

第一噴嘴臂51係支撐第一噴嘴41。第一噴嘴41係從第一噴嘴臂51朝向鉛直下方突出。同樣地,第二噴嘴臂52係支撐第二噴嘴42。第二噴嘴42係從第二噴嘴臂52朝向鉛直下方突出。第一噴嘴41亦可配置於第一噴嘴臂51的前端部。同樣地,第二噴嘴42亦可配置於第二噴嘴臂52的前端部。The first nozzle arm 51 supports the first nozzle 41. The first nozzle 41 protrudes directly downward from the first nozzle arm 51. Similarly, the second nozzle arm 52 supports the second nozzle 42. The second nozzle 42 protrudes directly downward from the second nozzle arm 52. The first nozzle 41 may also be disposed at the front end of the first nozzle arm 51. Similarly, the second nozzle 42 may also be disposed at the front end of the second nozzle arm 52.

第一噴嘴移動部54係以第一噴嘴基台53的中心CP2作為旋轉中心使第一噴嘴基台53旋轉。結果,第一噴嘴臂51以及第二噴嘴臂52係以第一噴嘴基台53的中心CP2作為旋轉中心迴旋,且第一噴嘴41以及第二噴嘴42係沿著以第一噴嘴基台53的中心CP2作為中心之周方向移動。第一噴嘴移動部54係被控制裝置101(控制部102)控制。第一噴嘴移動部54係例如包含步進馬達(stepping motor)。或者,第一噴嘴移動部54亦可包含馬達以及減速機。The first nozzle moving part 54 rotates the first nozzle base 53 with the center CP2 of the first nozzle base 53 as the rotation center. As a result, the first nozzle arm 51 and the second nozzle arm 52 rotate with the center CP2 of the first nozzle base 53 as the rotation center, and the first nozzle 41 and the second nozzle 42 move along the circumferential direction with the center CP2 of the first nozzle base 53 as the center. The first nozzle moving part 54 is controlled by the control device 101 (control part 102). The first nozzle moving part 54 includes, for example, a stepping motor. Alternatively, the first nozzle moving part 54 may also include a motor and a speed reducer.

在此,說明第一噴嘴移動機構5的動作。首先,第一噴嘴移動機構5係使第一噴嘴41移動至處理位置。此時,第二噴嘴42係與第一噴嘴41同步地移動。更具體而言,第二噴嘴42係移動至待機位置。在此,待機位置為在水平面內於處理位置彼此相鄰之位置。因此,待機位置為基板W的上方的位置。Here, the operation of the first nozzle moving mechanism 5 is described. First, the first nozzle moving mechanism 5 moves the first nozzle 41 to the processing position. At this time, the second nozzle 42 moves synchronously with the first nozzle 41. More specifically, the second nozzle 42 moves to the standby position. Here, the standby position is a position adjacent to the processing position in the horizontal plane. Therefore, the standby position is a position above the substrate W.

第一噴嘴41係從處理位置對基板W供給第一藥液。第一噴嘴移動機構5係在第一噴嘴41停止供給第一藥液後,使第二噴嘴42從待機位置移動至處理位置。此時,第一噴嘴41係與第二噴嘴42同步地移動。第二噴嘴42主要是從處理位置對基板W供給第一清洗液。在本實施形態中,第二噴嘴42係在位於待機位置時開始噴出第一清洗液。因此,第二噴嘴42亦在從待機位置移動至處理位置之期間將第一清洗液供給至基板W。The first nozzle 41 supplies the first chemical solution to the substrate W from the processing position. The first nozzle moving mechanism 5 moves the second nozzle 42 from the standby position to the processing position after the first nozzle 41 stops supplying the first chemical solution. At this time, the first nozzle 41 moves synchronously with the second nozzle 42. The second nozzle 42 mainly supplies the first cleaning liquid to the substrate W from the processing position. In this embodiment, the second nozzle 42 starts to spray the first cleaning liquid when it is located at the standby position. Therefore, the second nozzle 42 also supplies the first cleaning liquid to the substrate W during the period of moving from the standby position to the processing position.

接著,說明第三噴嘴43、第四噴嘴44以及第二噴嘴移動機構6。Next, the third nozzle 43, the fourth nozzle 44, and the second nozzle moving mechanism 6 will be described.

第三噴嘴43為固定噴嘴,從一定的位置朝向被基板保持部3保持的基板W的上表面噴出第二清洗液(例如去離子水)。結果,第二清洗液係被供給至基板W。具體而言,第二清洗液係從第三噴嘴43的前端噴出。此外,第三噴嘴43係配置於液體接住部9的外側,從液體接住部9的外側朝向旋轉中的基板W的中心噴出第二清洗液。The third nozzle 43 is a fixed nozzle, and sprays the second cleaning liquid (e.g., deionized water) from a certain position toward the upper surface of the substrate W held by the substrate holding portion 3. As a result, the second cleaning liquid is supplied to the substrate W. Specifically, the second cleaning liquid is sprayed from the front end of the third nozzle 43. In addition, the third nozzle 43 is arranged on the outer side of the liquid receiving portion 9, and sprays the second cleaning liquid from the outer side of the liquid receiving portion 9 toward the center of the substrate W that is rotating.

第四噴嘴44係朝向被基板保持部3保持的基板W的上表面噴出第二藥液(例如SC1)。結果,第二藥液係被供給至基板W。具體而言,第二藥液係從第四噴嘴44的前端噴出。此外,第二藥液係從第四噴嘴44朝向旋轉中的基板W噴出。The fourth nozzle 44 ejects the second chemical solution (e.g., SC1) toward the upper surface of the substrate W held by the substrate holding portion 3. As a result, the second chemical solution is supplied to the substrate W. Specifically, the second chemical solution is ejected from the front end of the fourth nozzle 44. In addition, the second chemical solution is ejected from the fourth nozzle 44 toward the substrate W that is rotating.

第二噴嘴移動機構6係使第四噴嘴44在第二退避區域與處理位置之間移動。第二噴嘴移動機構6的動作係被控制裝置101(控制部102)控制。與第一退避區域同樣地,第二退避區域為液體接住部9的外側的區域。圖2係顯示位於第二退避區域的第四噴嘴44。與第一噴嘴41以及第二噴嘴42的處理位置同樣地,第四噴嘴44的處理位置為與基板W的中心對向之位置。The second nozzle moving mechanism 6 moves the fourth nozzle 44 between the second retreat area and the processing position. The movement of the second nozzle moving mechanism 6 is controlled by the control device 101 (control unit 102). Like the first retreat area, the second retreat area is the area outside the liquid receiving portion 9. FIG. 2 shows the fourth nozzle 44 located in the second retreat area. Like the processing positions of the first nozzle 41 and the second nozzle 42, the processing position of the fourth nozzle 44 is a position opposite to the center of the substrate W.

第二噴嘴移動機構6亦可具有第三噴嘴臂61、第二噴嘴基台62以及第二噴嘴移動部63。第二噴嘴基台62係於鉛直方向延伸。第三噴嘴臂61的基端部係結合至第二噴嘴基台62。第三噴嘴臂61係從第二噴嘴基台62朝水平方向延伸。The second nozzle moving mechanism 6 may also include a third nozzle arm 61, a second nozzle base 62, and a second nozzle moving portion 63. The second nozzle base 62 extends in the vertical direction. The base end of the third nozzle arm 61 is coupled to the second nozzle base 62. The third nozzle arm 61 extends from the second nozzle base 62 in the horizontal direction.

第三噴嘴臂61係支撐第四噴嘴44。第四噴嘴44係從第三噴嘴臂61朝向鉛直下方突出。第四噴嘴44亦可配置於第三噴嘴臂61的前端部。The third nozzle arm 61 supports the fourth nozzle 44. The fourth nozzle 44 protrudes directly downward from the third nozzle arm 61. The fourth nozzle 44 may also be disposed at the front end of the third nozzle arm 61.

第二噴嘴移動部63係以第二噴嘴基台62的中心CP3作為旋轉中心使第二噴嘴基台62旋轉。結果,第三噴嘴臂61係以第二噴嘴基台62的中心CP3作為旋轉中心迴旋,第四噴嘴44係沿著以第二噴嘴基台62的中心CP3作為中心之方周方向移動。第二噴嘴移動部63係被控制裝置101(控制部102)控制。第二噴嘴移動部63係例如包含步進馬達。或者,第二噴嘴移動部63亦可包含馬達以及減速機。The second nozzle moving part 63 rotates the second nozzle base 62 with the center CP3 of the second nozzle base 62 as the rotation center. As a result, the third nozzle arm 61 rotates with the center CP3 of the second nozzle base 62 as the rotation center, and the fourth nozzle 44 moves along the circumferential direction with the center CP3 of the second nozzle base 62 as the center. The second nozzle moving part 63 is controlled by the control device 101 (control part 102). The second nozzle moving part 63 includes, for example, a stepping motor. Alternatively, the second nozzle moving part 63 may also include a motor and a speed reducer.

在第二噴嘴42停止供給第一清洗液且第一噴嘴41以及第二噴嘴42移動至第一退避區域後,第二噴嘴移動機構6係使第四噴嘴44從第二退避區域移動至處理位置。第四噴嘴44係從處理位置對基板W供給第二藥液。After the second nozzle 42 stops supplying the first cleaning solution and the first nozzle 41 and the second nozzle 42 move to the first retreat area, the second nozzle moving mechanism 6 moves the fourth nozzle 44 from the second retreat area to the processing position. The fourth nozzle 44 supplies the second chemical solution to the substrate W from the processing position.

接著,說明液體接住部9。液體接住部9係圍繞基板保持部3的周圍並接住從基板W排出的處理液。液體接住部9係例如為罩杯(cup)或者防護罩(guard)。Next, the liquid receiving portion 9 will be described. The liquid receiving portion 9 surrounds the substrate holding portion 3 and receives the processing liquid discharged from the substrate W. The liquid receiving portion 9 is, for example, a cup or a guard.

接著,說明拍攝裝置110。拍攝裝置110係具有例如拍攝元件、電子快門(electronic shutter)以及光學系統。拍攝元件係例如能夠為CCD(Charge Coupled Device;電荷耦合元件)。光學系統係例如包含透鏡(lens)。拍攝裝置110係拍攝處理室2的內部並生成拍攝圖像SG。拍攝裝置110係將拍攝圖像SG輸出至控制裝置101。具體而言,拍攝裝置110係將拍攝圖像SG輸出至控制部102。拍攝裝置110的動作係被控制裝置101(控制部102)控制。Next, the photographing device 110 is described. The photographing device 110 has, for example, a photographing element, an electronic shutter, and an optical system. The photographing element can be, for example, a CCD (Charge Coupled Device). The optical system includes, for example, a lens. The photographing device 110 photographs the interior of the processing chamber 2 and generates a photographed image SG. The photographing device 110 outputs the photographed image SG to the control device 101. Specifically, the photographing device 110 outputs the photographed image SG to the control unit 102. The operation of the photographing device 110 is controlled by the control device 101 (control unit 102).

在本實施形態中,拍攝裝置110係配置於處理室2的外側。處理室2係具有與拍攝裝置110對向之側壁2a,於側壁2a設置有與拍攝裝置110對向之窗部。拍攝裝置110係經由側壁2a的窗部拍攝處理室2的內部。窗部係供光線穿透。例如,窗部係供可視光穿透。In this embodiment, the camera 110 is disposed outside the processing room 2. The processing room 2 has a side wall 2a opposite to the camera 110, and a window opposite to the camera 110 is provided on the side wall 2a. The camera 110 photographs the interior of the processing room 2 through the window of the side wall 2a. The window allows light to pass through. For example, the window allows visible light to pass through.

拍攝裝置110係拍攝處理室2的內部,檢測第二噴嘴42開始噴出第一清洗液。同樣地,拍攝裝置110係拍攝處理室2的內部,檢測第三噴嘴43開始噴出第二清洗液以及第四噴嘴44開始噴出第二藥液。在本實施形態中,拍攝裝置110係拍攝處理室2的內部,檢測第一清洗液已經從第二噴嘴42的前端被噴出之事態。同樣地,拍攝裝置110係拍攝處理室2的內部,檢測第二清洗液已經從第三噴嘴43的前端被噴出之事態。此外,拍攝裝置110係拍攝處理室2的內部,檢測第二藥液已經從第四噴嘴44的前端被噴出之事態。The photographing device 110 photographs the interior of the processing chamber 2 and detects that the second nozzle 42 starts to spray the first cleaning liquid. Similarly, the photographing device 110 photographs the interior of the processing chamber 2 and detects that the third nozzle 43 starts to spray the second cleaning liquid and that the fourth nozzle 44 starts to spray the second liquid. In this embodiment, the photographing device 110 photographs the interior of the processing chamber 2 and detects that the first cleaning liquid has been sprayed from the front end of the second nozzle 42. Similarly, the photographing device 110 photographs the interior of the processing chamber 2 and detects that the second cleaning liquid has been sprayed from the front end of the third nozzle 43. In addition, the imaging device 110 images the interior of the processing chamber 2 to detect that the second chemical solution has been ejected from the front end of the fourth nozzle 44 .

控制裝置101(控制部102)係基於從拍攝裝置110輸入的拍攝圖像SG,取得第二噴嘴42的第一清洗液的開始噴出時序。同樣地,控制裝置101(控制部102)係基於從拍攝裝置110輸入的拍攝圖像SG,取得第三噴嘴43的第二清洗液的開始噴出時序以及第四噴嘴44的第二藥液的開始噴出時序。在本實施形態中,第一清洗液的開始噴出時序係顯示第一清洗液從第二噴嘴42的前端噴出之時序。同樣地,第二清洗液的開始噴出時序係顯示第二清洗液從第三噴嘴43的前端噴出之時序,第二藥液的開始噴出時序係顯示第二藥液從第四噴嘴44的前端噴出之時序。The control device 101 (control unit 102) obtains the start ejection timing of the first cleaning liquid from the second nozzle 42 based on the captured image SG input from the imaging device 110. Similarly, the control device 101 (control unit 102) obtains the start ejection timing of the second cleaning liquid from the third nozzle 43 and the start ejection timing of the second chemical solution from the fourth nozzle 44 based on the captured image SG input from the imaging device 110. In the present embodiment, the start ejection timing of the first cleaning liquid indicates the timing at which the first cleaning liquid is ejected from the front end of the second nozzle 42. Similarly, the start timing of spraying the second cleaning liquid indicates the timing when the second cleaning liquid is sprayed from the front end of the third nozzle 43 , and the start timing of spraying the second chemical liquid indicates the timing when the second chemical liquid is sprayed from the front end of the fourth nozzle 44 .

接著,說明照明裝置111。照明裝置111係對處理室2的內部照射光線。照明裝置111的動作係被控制裝置101(控制部102)控制。藉由對處理室2的內部照射光線,開始噴出第一清洗液的檢測、開始噴出第二清洗液的檢測以及開始噴出第二藥液的檢測係變得容易。照明裝置111係在執行基板處理時照射光線。例如,照明裝置111亦可僅在拍攝裝置110執行拍攝動作時照射光線。Next, the lighting device 111 is described. The lighting device 111 irradiates light to the inside of the processing chamber 2. The operation of the lighting device 111 is controlled by the control device 101 (control unit 102). By irradiating light to the inside of the processing chamber 2, it becomes easy to detect the start of spraying the first cleaning liquid, the start of spraying the second cleaning liquid, and the start of spraying the second chemical solution. The lighting device 111 irradiates light when performing substrate processing. For example, the lighting device 111 may irradiate light only when the camera 110 performs a shooting operation.

詳細而言,拍攝裝置110係以預定的幀率(frame rate)(例如60幀(frame)/秒)拍攝處理室2的內部。結果,拍攝圖像SG的各個幀係依序被輸入至控制部102。各個幀的像素值係因應亮度值的變化而變化。亮度值係根據處理液是否映照於拍攝圖像SG而變化。控制部102係基於拍攝圖像SG的各個幀的像素值,取得第一清洗液的開始噴出時序、第二清洗液的開始噴出時序以及第二藥液的開始噴出時序。依據本實施形態,藉由對處理室2的內部照射光線,根據處理液是否映照於拍攝圖像SG而變化之亮度值的變化量係變大。因此,藉由對處理室2的內部照射光線,開始噴出第一清洗液的檢測、開始噴出第二清洗液的檢測以及開始噴出第二藥液的檢測係變得容易。Specifically, the photographing device 110 photographs the interior of the processing chamber 2 at a predetermined frame rate (e.g., 60 frames/second). As a result, each frame of the photographed image SG is sequentially input to the control unit 102. The pixel value of each frame changes in accordance with the change in the brightness value. The brightness value changes depending on whether the processing liquid is reflected on the photographed image SG. The control unit 102 obtains the start timing of ejecting the first cleaning liquid, the start timing of ejecting the second cleaning liquid, and the start timing of ejecting the second chemical liquid based on the pixel value of each frame of the photographed image SG. According to this embodiment, by irradiating light to the inside of the processing chamber 2, the amount of change in the brightness value that changes depending on whether the processing liquid is reflected on the captured image SG becomes larger. Therefore, by irradiating light to the inside of the processing chamber 2, it becomes easy to detect the start of spraying the first cleaning liquid, the start of spraying the second cleaning liquid, and the start of spraying the second chemical liquid.

接著,參照圖1至圖3說明本實施形態的基板處理裝置100。圖3係示意性地顯示本實施形態的基板處理裝置100的構成之圖。詳細而言,圖3係包含示意性地顯示基板處理裝置100所包含的處理部1的構成之剖面。此外,為了容易理解,在圖3中將第四噴嘴44以及第二噴嘴移動機構6描繪於第一噴嘴41、第二噴嘴42以及第一噴嘴移動機構5的上方。Next, the substrate processing apparatus 100 of the present embodiment will be described with reference to FIGS. 1 to 3 . FIG. 3 is a diagram schematically showing the structure of the substrate processing apparatus 100 of the present embodiment. Specifically, FIG. 3 includes a cross section schematically showing the structure of the processing unit 1 included in the substrate processing apparatus 100. In addition, for easy understanding, the fourth nozzle 44 and the second nozzle moving mechanism 6 are depicted above the first nozzle 41, the second nozzle 42 and the first nozzle moving mechanism 5 in FIG.

如圖3所示,基板處理裝置100係進一步地具備基板旋轉部7、第一液體供給配管81至第四液體供給配管84、第一閥VA1至第四閥VA4以及第一倒吸閥(suck back valve)SB1至第四倒吸閥SB4。基板旋轉部7、第一液體供給配管81至第四液體供給配管84、第一閥VA1至第四閥VA4以及第一倒吸閥SB1至第四倒吸閥SB4係設置於每個處理部1(處理室2)。此外,在本實施形態中,第一閥VA1至第四閥VA4為開閉閥。As shown in FIG3 , the substrate processing apparatus 100 further includes a substrate rotating portion 7, first to fourth liquid supply pipes 81 to 84, first valves VA1 to VA4, and first to fourth suck back valves SB1 to SB4. The substrate rotating portion 7, the first to fourth liquid supply pipes 81 to 84, the first to fourth valves VA1 to VA4, and the first to fourth suck back valves SB1 to SB4 are provided in each processing portion 1 (processing chamber 2). In addition, in the present embodiment, the first to fourth valves VA1 to VA4 are open/close valves.

處理室2係進一步地收容基板旋轉部7以及第一液體供給配管81至第四液體供給配管84各者的一部分。第一閥VA1至第四閥VA4以及第一倒吸閥SB1至第四倒吸閥SB4係配置於處理室2的外側。具體而言,第一閥VA1至第四閥VA4以及第一倒吸閥SB1至第四倒吸閥SB4係被收容於參照圖1所說明的流體箱100B內。The processing chamber 2 further accommodates a portion of each of the substrate rotating portion 7 and the first liquid supply pipe 81 to the fourth liquid supply pipe 84. The first valve VA1 to the fourth valve VA4 and the first back suction valve SB1 to the fourth back suction valve SB4 are arranged outside the processing chamber 2. Specifically, the first valve VA1 to the fourth valve VA4 and the first back suction valve SB1 to the fourth back suction valve SB4 are accommodated in the fluid box 100B described with reference to FIG. 1.

基板旋轉部7係以第一旋轉軸線AX1作為中心使基板W與基板保持部3一體性地旋轉。基板旋轉部7的動作係被控制裝置101(控制部102)控制。第一旋轉軸線AX1係於鉛直方向延伸,並通過圖2所示的自轉基座31的中心CP1。The substrate rotating unit 7 rotates the substrate W integrally with the substrate holding unit 3 around the first rotation axis AX1. The operation of the substrate rotating unit 7 is controlled by the control device 101 (control unit 102). The first rotation axis AX1 extends in the vertical direction and passes through the center CP1 of the rotation base 31 shown in FIG.

詳細而言,基板旋轉部7係以第一旋轉軸線AX1作為中心使自轉基座31旋轉。因此,自轉基座31係以第一旋轉軸線AX1作為中心旋轉。結果,被基板保持部3保持的基板W係以第一旋轉軸線AX1作為中心旋轉。Specifically, the substrate rotating unit 7 rotates the rotation base 31 around the first rotation axis AX1. Therefore, the rotation base 31 rotates around the first rotation axis AX1. As a result, the substrate W held by the substrate holding unit 3 rotates around the first rotation axis AX1.

基板旋轉部7係具有例如馬達本體71以及軸部(shaft)72。軸部72係結合至自轉基座31。馬達本體71係使軸部72旋轉。結果,自轉基座31係旋轉。馬達本體71的動作係被控制裝置101(控制部102)控制。The substrate rotating part 7 has, for example, a motor body 71 and a shaft 72. The shaft 72 is coupled to the rotation base 31. The motor body 71 rotates the shaft 72. As a result, the rotation base 31 rotates. The movement of the motor body 71 is controlled by the control device 101 (control part 102).

接著,說明第一噴嘴移動機構5。參照圖2所說明的第一噴嘴移動部54係以第二旋轉軸線AX2作為中心使第一噴嘴基台53旋轉。結果,第一噴嘴41以及第二噴嘴42係沿著以第二旋轉軸線AX2作為中心之周方向繞著第一噴嘴基台53移動。第二旋轉軸線AX2係於鉛直方向延伸,並通過圖2所示的第一噴嘴基台53的中心CP2。Next, the first nozzle moving mechanism 5 is described. The first nozzle moving part 54 described with reference to FIG. 2 rotates the first nozzle base 53 around the second rotation axis AX2. As a result, the first nozzle 41 and the second nozzle 42 move around the first nozzle base 53 in the circumferential direction around the second rotation axis AX2. The second rotation axis AX2 extends in the vertical direction and passes through the center CP2 of the first nozzle base 53 shown in FIG.

接著,說明第二噴嘴移動機構6。參照圖2所說明的第二噴嘴移動部63係以第三旋轉軸線AX3作為中心使第二噴嘴基台62旋轉。結果,第四噴嘴44係沿著以第三旋轉軸線AX3作為中心之周方向繞著第二噴嘴基台62移動。第三旋轉軸線AX3係於鉛直方向延伸,並通過圖2所示的第二噴嘴基台62的中心CP3。Next, the second nozzle moving mechanism 6 is described. The second nozzle moving part 63 described with reference to FIG. 2 rotates the second nozzle base 62 around the third rotation axis AX3. As a result, the fourth nozzle 44 moves around the second nozzle base 62 in the circumferential direction around the third rotation axis AX3. The third rotation axis AX3 extends in the vertical direction and passes through the center CP3 of the second nozzle base 62 shown in FIG. 2.

接著,說明第一噴嘴41至第四噴嘴44、第一液體供給配管81至第四液體供給配管81以及第一閥VA1至第四閥VA4。Next, the first to fourth nozzles 41 to 44, the first to fourth liquid supply pipes 81 to 81, and the first to fourth valves VA1 to VA4 are described.

第一液體供給配管81係連接於第一噴嘴41。第一液體供給配管81為管狀構件,對第一噴嘴41供給第一藥液。如圖3所示,第一噴嘴41係具有第一噴出口41a。第一噴出口41a係形成於第一噴嘴41的前端。從第一液體供給配管81被供給至第一噴嘴41之第一藥液係從第一噴出口41a噴出。The first liquid supply pipe 81 is connected to the first nozzle 41. The first liquid supply pipe 81 is a tubular member and supplies the first chemical liquid to the first nozzle 41. As shown in FIG. 3 , the first nozzle 41 has a first ejection port 41a. The first ejection port 41a is formed at the front end of the first nozzle 41. The first chemical liquid supplied from the first liquid supply pipe 81 to the first nozzle 41 is ejected from the first ejection port 41a.

第一閥VA1係設置於第一液體供給配管81。第一閥VA1係控制朝第一噴嘴41供給第一藥液以及停止朝第一噴嘴41供給第一藥液。The first valve VA1 is provided in the first liquid supply pipe 81. The first valve VA1 controls the supply of the first chemical liquid to the first nozzle 41 and stops the supply of the first chemical liquid to the first nozzle 41.

具體而言,第一閥VA1係能夠在打開狀態與關閉狀態之間切換。控制裝置101(控制部102)係控制第一閥VA1的開閉動作。在第一閥VA1為打開狀態之情形中,第一藥液係經由第一液體供給配管81流通至第一噴嘴41。結果,從第一噴出口41a噴出第一藥液。另一方面,在第一閥VA1為關閉狀態之情形中,停止第一藥液經由第一液體供給配管81流通。Specifically, the first valve VA1 can be switched between an open state and a closed state. The control device 101 (control unit 102) controls the opening and closing action of the first valve VA1. When the first valve VA1 is in an open state, the first liquid medicine flows to the first nozzle 41 through the first liquid supply pipe 81. As a result, the first liquid medicine is ejected from the first ejection port 41a. On the other hand, when the first valve VA1 is in a closed state, the first liquid medicine is stopped from flowing through the first liquid supply pipe 81.

第二液體供給配管82係連接於第二噴嘴42。第二液體供給配管82為管狀構件,對第二噴嘴42供給第一清洗液。如圖3所示,第二噴嘴42係具有第二噴出口42a。第二噴出口42a係形成於第二噴嘴42的前端。從第二液體供給配管82供給至第二噴嘴42之第一清洗液係從第二噴出口42a噴出。此外,第一噴出口41a與第二噴出口42a之間的中心間距離係例如為20mm。The second liquid supply pipe 82 is connected to the second nozzle 42. The second liquid supply pipe 82 is a tubular member and supplies the first cleaning liquid to the second nozzle 42. As shown in FIG. 3, the second nozzle 42 has a second nozzle 42a. The second nozzle 42a is formed at the front end of the second nozzle 42. The first cleaning liquid supplied from the second liquid supply pipe 82 to the second nozzle 42 is ejected from the second nozzle 42a. In addition, the center distance between the first nozzle 41a and the second nozzle 42a is, for example, 20 mm.

第二閥VA2係設置於第二液體供給配管82。第二閥VA2係控制朝第二噴嘴42供給第一清洗液以及停止朝第二噴嘴42供給第一清洗液。由於第二閥VA2的構成係與第一閥VA1相同,因此省略詳細的說明。The second valve VA2 is provided in the second liquid supply pipe 82. The second valve VA2 controls the supply of the first cleaning liquid to the second nozzle 42 and stops the supply of the first cleaning liquid to the second nozzle 42. Since the configuration of the second valve VA2 is the same as that of the first valve VA1, detailed description thereof is omitted.

第三液體供給配管83係連接於第三噴嘴43。第三液體供給配管83為管狀構件,對第三噴嘴43供給第二清洗液。如圖3所示,第三噴嘴43係具有第三噴出口43a。第三噴出口43a係形成於第三噴嘴43的前端。從第三液體供給配管83供給至第三噴嘴43之第二清洗液係從第三噴出口43a噴出。The third liquid supply pipe 83 is connected to the third nozzle 43. The third liquid supply pipe 83 is a tubular member and supplies the second cleaning liquid to the third nozzle 43. As shown in FIG. 3 , the third nozzle 43 has a third nozzle outlet 43a. The third nozzle outlet 43a is formed at the front end of the third nozzle 43. The second cleaning liquid supplied from the third liquid supply pipe 83 to the third nozzle 43 is ejected from the third nozzle outlet 43a.

第三閥VA3係設置於第三液體供給配管83。第三閥VA3係控制朝第三噴嘴43供給第二清洗液以及停止朝第三噴嘴43供給第二清洗液。由於第三閥VA3的構成係與第一閥VA1相同,因此省略詳細的說明。The third valve VA3 is provided in the third liquid supply pipe 83. The third valve VA3 controls the supply of the second cleaning liquid to the third nozzle 43 and stops the supply of the second cleaning liquid to the third nozzle 43. Since the configuration of the third valve VA3 is the same as that of the first valve VA1, detailed description thereof is omitted.

第四液體供給配管84係連接於第四噴嘴44。第四液體供給配管84為管狀構件,對第四噴嘴44噴出第二藥液。如圖3所示,第四噴嘴44係具有第四噴出口44a。第四噴出口44a係形成於第四噴嘴44的前端。從第四液體供給配管84供給至第四噴嘴44之第二藥液係從第四噴出口44a噴出。The fourth liquid supply pipe 84 is connected to the fourth nozzle 44. The fourth liquid supply pipe 84 is a tubular member and sprays the second liquid to the fourth nozzle 44. As shown in FIG. 3 , the fourth nozzle 44 has a fourth spray port 44a. The fourth spray port 44a is formed at the front end of the fourth nozzle 44. The second liquid supplied from the fourth liquid supply pipe 84 to the fourth nozzle 44 is sprayed from the fourth spray port 44a.

第四閥VA4係設置於第四液體供給配管84。第四閥VA4係控制朝第四噴嘴44供給第二藥液以及停止朝第四噴嘴44供給第二藥液。由於第四閥VA4的構成係與第一閥VA1相同,因此省略詳細的說明。The fourth valve VA4 is provided in the fourth liquid supply pipe 84. The fourth valve VA4 controls the supply of the second liquid chemical to the fourth nozzle 44 and stops the supply of the second liquid chemical to the fourth nozzle 44. Since the configuration of the fourth valve VA4 is the same as that of the first valve VA1, detailed description thereof is omitted.

接著,說明第一倒吸閥SB1至第四倒吸閥SB4。第一倒吸閥SB1至第四倒吸閥SB4係分別設置於第一液體供給配管81至第四液體供給配管84。詳細而言,第一倒吸閥SB1至第四倒吸閥SB4係分別設置於比第一閥VA1至第四閥VA4還下游測。Next, the first back suction valve SB1 to the fourth back suction valve SB4 are described. The first back suction valve SB1 to the fourth back suction valve SB4 are respectively provided in the first liquid supply piping 81 to the fourth liquid supply piping 84. Specifically, the first back suction valve SB1 to the fourth back suction valve SB4 are respectively provided downstream of the first valve VA1 to the fourth valve VA4.

第一倒吸閥SB1係在第一噴嘴41停止噴出第一藥液時吸入第一液體供給配管81內的第一藥液,藉此將第一藥液從第一噴出口41a引入至第一液體供給配管81內。結果,在停止噴出第一藥液時,第一藥液係難以變成較大的體積(液滴)從第一噴出口41a落下。亦即,難以產生「滴落」。第一倒吸閥SB1的動作係被控制裝置101(控制部102)控制。The first back suction valve SB1 sucks the first liquid in the first liquid supply pipe 81 when the first nozzle 41 stops spraying the first liquid, thereby introducing the first liquid from the first nozzle 41a into the first liquid supply pipe 81. As a result, when the spraying of the first liquid stops, it is difficult for the first liquid to become a large volume (liquid droplets) and fall from the first nozzle 41a. In other words, it is difficult to produce "dripping". The operation of the first back suction valve SB1 is controlled by the control device 101 (control unit 102).

由於第二倒吸閥SB2至第四倒吸閥SB4的構成係與第一倒吸閥SB1相同,因此省略第二倒吸閥SB2至第四倒吸閥SB4的詳細的說明。Since the structures of the second to fourth back suction valves SB2 to SB4 are the same as those of the first back suction valve SB1, detailed descriptions of the second to fourth back suction valves SB2 to SB4 are omitted.

接著,參照圖1至圖4說明拍攝裝置110的拍攝範圍SH。圖4係顯示本實施形態的基板處理裝置100所包含的拍攝裝置110的拍攝範圍SH之圖。此外,為了容易理解,在圖4中僅顯示處理室2的內部的構成要素中的第一噴嘴41、第二噴嘴42、第三噴嘴43、第一液體供給配管81的一部分以及第二液體供給配管82與第三液體供給配管83的一部分。Next, the shooting range SH of the shooting device 110 is explained with reference to FIGS. 1 to 4. FIG. 4 is a diagram showing the shooting range SH of the shooting device 110 included in the substrate processing device 100 of this embodiment. In addition, for easy understanding, FIG. 4 only shows the first nozzle 41, the second nozzle 42, the third nozzle 43, a part of the first liquid supply pipe 81, and a part of the second liquid supply pipe 82 and the third liquid supply pipe 83 among the internal components of the processing chamber 2.

如圖4所示,拍攝裝置110的拍攝範圍SH係包含能夠拍攝位於待機位置的第二噴嘴42的前端(第二噴出口42a)、從第二噴嘴42的前端(第二噴出口42a)噴出的第一清洗液、第三噴嘴43的前端(第三噴出口43a)、以及從第三噴嘴43的前端(第三噴出口43a)噴出的第二清洗液之範圍。因此,拍攝裝置110係能檢測第一清洗液的開始噴出以及第二清洗液的開始噴出。在本實施形態中,於拍攝裝置110的拍攝範圍SH進一步地包含能夠拍攝位於處理位置的第四噴嘴44的前端(第四噴出口44a)、以及從第四噴嘴44的前端(第四噴出口44a)噴出的第二藥液之範圍。As shown in FIG4 , the shooting range SH of the shooting device 110 includes a range capable of shooting the front end (second ejection port 42a) of the second nozzle 42 in the standby position, the first cleaning liquid ejected from the front end (second ejection port 42a) of the second nozzle 42, the front end (third ejection port 43a) of the third nozzle 43, and the second cleaning liquid ejected from the front end (third ejection port 43a) of the third nozzle 43. Therefore, the shooting device 110 can detect the start of ejection of the first cleaning liquid and the start of ejection of the second cleaning liquid. In this embodiment, the imaging range SH of the imaging device 110 further includes an imaging range of the tip (fourth ejection port 44a) of the fourth nozzle 44 at the processing position and the second chemical liquid ejected from the tip (fourth ejection port 44a) of the fourth nozzle 44.

拍攝裝置110係對拍攝範圍SH進行拍攝並生成拍攝圖像SG。拍攝圖像SG係被輸入至控制裝置101(控制部102)。因此,控制部102係能取得第一清洗液的開始噴出時序以及第二清洗液的開始噴出時序。The image capturing device 110 captures the image capturing range SH and generates the captured image SG. The captured image SG is input to the control device 101 (control unit 102). Therefore, the control unit 102 can obtain the start timing of ejecting the first cleaning liquid and the start timing of ejecting the second cleaning liquid.

此外,在第一噴嘴41以及第二噴嘴42位於參照圖2所說明的第一退避區域且第四噴嘴44位於處理位置的情形中,於拍攝裝置110的拍攝範圍SH包含有能夠拍攝位於處理位置的第四噴嘴44的前端(第四噴出口44a)、以及從第四噴嘴44的前端(第四噴出口44a)噴出的第二藥液之範圍。因此,拍攝裝置110係能檢測第二藥液的開始噴出。此外,控制部102係能取得第二藥液的開始噴出時序。In addition, when the first nozzle 41 and the second nozzle 42 are located in the first retreat area described with reference to FIG. 2 and the fourth nozzle 44 is located at the processing position, the shooting range SH of the shooting device 110 includes a range that can shoot the front end (fourth nozzle 44a) of the fourth nozzle 44 located at the processing position and the second liquid sprayed from the front end (fourth nozzle 44a) of the fourth nozzle 44. Therefore, the shooting device 110 can detect the start of spraying of the second liquid. In addition, the control unit 102 can obtain the start timing of spraying of the second liquid.

接著,參照圖1至圖6說明控制部102所執行的處理。圖5係顯示正在從第一噴出口41a噴出第一藥液時的拍攝圖像SG之圖。圖6係顯示已經開始從第二噴出口42a噴出第一清洗液時的拍攝圖像SG之圖。此外,為了容易理解,在圖5以及圖6中僅顯示處理室2的內部的構成要素中的第一噴嘴41、第二噴嘴42、第一液體供給配管81的一部分以及第二液體供給配管82。此外,為了容易理解,在圖5以及圖6中比實際還遠離地描繪第一噴嘴41以及第二噴嘴42。Next, the processing performed by the control unit 102 is explained with reference to Figures 1 to 6. Figure 5 shows a captured image SG when the first chemical liquid is being ejected from the first nozzle 41a. Figure 6 shows a captured image SG when the first cleaning liquid has started to be ejected from the second nozzle 42a. In addition, for easy understanding, only the first nozzle 41, the second nozzle 42, a part of the first liquid supply pipe 81, and the second liquid supply pipe 82 are shown in Figures 5 and 6, which are the internal components of the processing chamber 2. In addition, in Figures 5 and 6, the first nozzle 41 and the second nozzle 42 are depicted farther away than they actually are for easy understanding.

如圖5所示,在正在從第一噴出口41a噴出第一藥液時,當參照圖3所說明的第二閥VA2從關閉狀態切換成打開狀態時,開始從第二液體供給配管82朝第二噴嘴42供給第一清洗液。圖5係顯示第一清洗液已經到達至第二噴出口42a之前的階段的拍攝圖像SG的幀。圖6係顯示已經開始從第二噴出口42a噴出第一清洗液的階段的拍攝圖像SG的幀。As shown in FIG5, when the second valve VA2 described with reference to FIG3 is switched from the closed state to the open state while the first chemical liquid is being ejected from the first ejection port 41a, the first cleaning liquid starts to be supplied from the second liquid supply pipe 82 to the second ejection nozzle 42. FIG5 is a frame of a captured image SG showing a stage before the first cleaning liquid has reached the second ejection port 42a. FIG6 is a frame of a captured image SG showing a stage when the first cleaning liquid has started to be ejected from the second ejection port 42a.

當被輸入拍攝圖像SG的幀時,控制部102係從拍攝圖像SG的幀切出圖像處理區域KA,並基於圖像處理區域KA的圖像取得第一清洗液的開始噴出時序。更具體而言,控制部102係將圖像處理區域KA的圖像進行圖像處理並取得像素值。接著,控制部102係基於所取得的像素值取得第二噴嘴42的第一清洗液的開始噴出時序。When the frame of the captured image SG is input, the control unit 102 cuts out the image processing area KA from the frame of the captured image SG, and obtains the start timing of ejecting the first cleaning liquid based on the image of the image processing area KA. More specifically, the control unit 102 performs image processing on the image of the image processing area KA and obtains pixel values. Then, the control unit 102 obtains the start timing of ejecting the first cleaning liquid from the second nozzle 42 based on the obtained pixel values.

在本實施形態中,圖像處理區域KA係包含:第一圖像處理區域KA1,係從第二噴嘴42的前端(第二噴出口42a)朝第一清洗液的噴出方向延伸。由於第一清洗液朝向鉛直下方噴出,因此第一圖像處理區域KA1係具有朝拍攝圖像SG的縱方向延伸的長條形狀(例如矩形狀)。第一圖像處理區域KA1的橫方向的寬度係被設定成比第一清洗液的寬度還寬,第一圖像處理區域KA1的縱方向的長度係設定成第一圖像處理區域KA1未包含第一清洗液的著落位置之程度的長度。控制部102係基於第一圖像處理區域KA1的圖像取得從第二噴出口42a噴出第一清洗液的時序。In the present embodiment, the image processing area KA includes: a first image processing area KA1 extending from the front end (second nozzle 42a) of the second nozzle 42 toward the ejection direction of the first cleaning liquid. Since the first cleaning liquid is ejected toward the directly downward direction, the first image processing area KA1 has a strip shape (e.g., a rectangular shape) extending in the longitudinal direction of the captured image SG. The width of the first image processing area KA1 in the horizontal direction is set to be wider than the width of the first cleaning liquid, and the length of the first image processing area KA1 in the longitudinal direction is set to a length such that the first image processing area KA1 does not include the landing position of the first cleaning liquid. The control unit 102 obtains the timing of ejecting the first cleaning liquid from the second nozzle 42a based on the image of the first image processing area KA1.

此外,圖像處理區域KA亦對第三噴嘴43進行與第二噴嘴42同樣的設定。具體而言,圖像處理區域KA係包含:第二圖像處理區域,係從第三噴嘴43的前端(第三噴出口43a)朝第二清洗液的噴出方向延伸。因此,控制部102係能基於第二圖像處理區域的圖像檢測第二清洗液的開始噴出時序。In addition, the image processing area KA also performs the same settings on the third nozzle 43 as the second nozzle 42. Specifically, the image processing area KA includes: a second image processing area extending from the front end (third nozzle 43a) of the third nozzle 43 toward the ejection direction of the second cleaning liquid. Therefore, the control unit 102 can detect the start timing of ejection of the second cleaning liquid based on the image of the second image processing area.

再者,在第一噴嘴41以及第二噴嘴42位於參照圖2所說明的第一退避區域且第四噴嘴44位於處理位置的情形中,圖像處理區域KA亦對第四噴嘴44進行與第二噴嘴42同樣的設定。具體而言,圖像處理區域KA係包含:第三圖像處理區域,係從第四噴嘴44的前端(第四噴出口44a)朝第二藥液的噴出方向延伸。因此,控制部102係能基於第三圖像處理區域的圖像檢測第二藥液的開始噴出時序。Furthermore, in the case where the first nozzle 41 and the second nozzle 42 are located in the first retreat area described with reference to FIG. 2 and the fourth nozzle 44 is located in the processing position, the image processing area KA also performs the same settings on the fourth nozzle 44 as the second nozzle 42. Specifically, the image processing area KA includes: a third image processing area extending from the front end (fourth nozzle outlet 44a) of the fourth nozzle 44 toward the ejection direction of the second liquid medicine. Therefore, the control unit 102 can detect the start timing of ejection of the second liquid medicine based on the image of the third image processing area.

接著,參照圖1至圖7說明本實施形態的基板處理方法。圖7係顯示本實施形態的基板處理方法之流程圖。圖7所示的基板處理方法係被參照圖1至圖6所說明的基板處理裝置100執行。因此,圖7係顯示本實施形態的基板處理裝置100的動作。Next, the substrate processing method of this embodiment is described with reference to FIGS. 1 to 7. FIG. 7 is a flow chart showing the substrate processing method of this embodiment. The substrate processing method shown in FIG. 7 is executed by the substrate processing apparatus 100 described with reference to FIGS. 1 to 6. Therefore, FIG. 7 shows the operation of the substrate processing apparatus 100 of this embodiment.

圖7所示的基板處理方法(基板處理裝置100的動作)係因應藉由中心機器人CR將基板W搬入至處理室2的內部而開始。如圖7所示,當藉由中心機器人CR將基板W搬入至處理室2的內部時,基板保持部3係保持基板W(步驟S1)。The substrate processing method (operation of the substrate processing apparatus 100) shown in Fig. 7 starts in response to the central robot CR carrying the substrate W into the processing chamber 2. As shown in Fig. 7, when the central robot CR carries the substrate W into the processing chamber 2, the substrate holding unit 3 holds the substrate W (step S1).

當基板保持部3保持基板W時,拍攝裝置110係開始拍攝(步驟S2)。When the substrate holding portion 3 holds the substrate W, the imaging device 110 starts imaging (step S2).

當拍攝裝置110開始拍攝時,基板旋轉部7係使基板保持部3旋轉。結果,基板W係旋轉(步驟S3)。When the imaging device 110 starts imaging, the substrate rotating unit 7 rotates the substrate holding unit 3. As a result, the substrate W is rotated (step S3).

在基板W開始旋轉後,藉由處理液處理基板W(步驟S4)。在本實施形態中,第一藥液(例如DHF)、第二藥液(例如SC1)、第一清洗液(例如去離子水)以及第二清洗液(例如去離子水)係以第一藥液、第一清洗液、第二清洗液、第二藥液以及第二清洗液的順序被供給至基板W,藉此處理基板W。在結束基板處理時,基板旋轉部7係使基板W停止旋轉。After the substrate W starts to rotate, the substrate W is processed by the processing liquid (step S4). In the present embodiment, the first chemical liquid (e.g., DHF), the second chemical liquid (e.g., SC1), the first cleaning liquid (e.g., deionized water), and the second cleaning liquid (e.g., deionized water) are supplied to the substrate W in the order of the first chemical liquid, the first cleaning liquid, the second cleaning liquid, the second chemical liquid, and the second cleaning liquid, thereby processing the substrate W. When the substrate processing is finished, the substrate rotating unit 7 stops the rotation of the substrate W.

在執行基板處理後,拍攝裝置110係結束拍攝(步驟S5)。After performing substrate processing, the photographing device 110 ends photographing (step S5).

拍攝裝置110結束拍攝後,基板保持部3係解除對於基板W的保持。接著,中心機器人CR係將基板W搬出至處理室2的外部(步驟S6),結束圖7所示的基板處理方法(基板處理裝置100的動作)。After the imaging device 110 finishes imaging, the substrate holding portion 3 releases the substrate W. Then, the central robot CR carries the substrate W out of the processing chamber 2 (step S6), and the substrate processing method (operation of the substrate processing apparatus 100) shown in FIG.

接著,參照圖1至圖11說明本實施形態的基板處理方法(基板處理裝置100的動作)。圖8至圖11係顯示基板處理(圖7所示的步驟S4)的流程之流程圖。Next, the substrate processing method (operation of the substrate processing apparatus 100) of the present embodiment will be described with reference to Figures 1 to 11. Figures 8 to 11 are flow charts showing the process of substrate processing (step S4 shown in Figure 7).

如圖8所示,當開始基板處理時,首先,第一噴嘴移動機構5係使第一噴嘴41從第一退避區域移動至處理位置(步驟S11)。此時,第二噴嘴42係與第一噴嘴41同步地從第一退避區域移動至待機位置。As shown in FIG8 , when substrate processing starts, first, the first nozzle moving mechanism 5 moves the first nozzle 41 from the first retreat area to the processing position (step S11 ). At this time, the second nozzle 42 moves from the first retreat area to the standby position in synchronization with the first nozzle 41 .

當第一噴嘴41移動至處理位置時,控制裝置101(控制部102)係控制第一閥VA1(先行閥)開始朝第一噴嘴41(先行噴嘴)供給第一藥液(先行處理液)(步驟S12)。具體而言,控制裝置101(控制部102)係對第一閥VA1發送打開訊號。第一閥VA1係因應接收到打開訊號之事態而從關閉狀態切換成打開狀態。結果,開始朝第一噴嘴41供給第一藥液。When the first nozzle 41 moves to the treatment position, the control device 101 (control unit 102) controls the first valve VA1 (pilot valve) to start supplying the first liquid medicine (pilot treatment liquid) to the first nozzle 41 (pilot nozzle) (step S12). Specifically, the control device 101 (control unit 102) sends an opening signal to the first valve VA1. The first valve VA1 switches from a closed state to an open state in response to receiving the opening signal. As a result, the first liquid medicine starts to be supplied to the first nozzle 41.

當開始朝第一噴嘴41(先行噴嘴)供給第一藥液(先行處理液)時,從第一噴出口41a(先行噴嘴的噴出口)噴出第一藥液(先行處理液),第一藥液(先行處理液)係被供給至基板W。When the first chemical liquid (preliminary treatment liquid) starts to be supplied to the first nozzle 41 (preliminary nozzle), the first chemical liquid (preliminary treatment liquid) is ejected from the first ejection port 41a (the ejection port of the preliminary nozzle), and the first chemical liquid (preliminary treatment liquid) is supplied to the substrate W.

此外,開始朝第一噴嘴41供給第一藥液直至第一藥液從第一噴出口41a噴出為止之期間發生延遲時間。詳細而言,在最初噴出第一藥液時,發生第一藥液從第一閥VA1到達至第一噴出口41a為止所需要的時間量的延遲時間。在第二次起噴出第一藥液時,發生因為倒吸處理所導致的延遲時間。具體而言,在停止供給第一藥液時,第一藥液係被第一倒吸閥SB1倒吸。因此,開始供給第一藥液時,第一藥液係被引入至第一液體供給配管81內。結果,第一閥VA1係變成打開狀態,在第一藥液開始流通後直至第一藥液從第一噴出口41a噴出為止之期間發生延遲時間。In addition, a delay time occurs from the start of supplying the first liquid medicine to the first nozzle 41 until the first liquid medicine is ejected from the first ejection port 41a. Specifically, when the first liquid medicine is initially ejected, a delay time of the amount of time required for the first liquid medicine to reach the first ejection port 41a occurs. When the first liquid medicine is ejected for the second time, a delay time due to the back suction process occurs. Specifically, when the supply of the first liquid medicine is stopped, the first liquid medicine is back sucked by the first back suction valve SB1. Therefore, when the supply of the first liquid medicine is started, the first liquid medicine is introduced into the first liquid supply piping 81. As a result, the first valve VA1 is in an open state, and a delay time occurs from when the first chemical liquid starts to flow until the first chemical liquid is ejected from the first ejection port 41a.

當開始供給第一藥液時,控制裝置101(控制部102)係判定是否已經經過第一既定時間T1(步驟S13)。具體而言,控制部102係因應已經對第一閥VA1發送打開訊號之事態開始計時。第一既定時間T1係被記憶於記憶部103,用以顯示作為用以對第一噴嘴41供給第一藥液之時間間隔而預先被制定的值。控制部102係判定計時結果是否已經到達第一既定時間T1。基板W的上表面係在經過第一既定時間T1之期間成為被第一藥液的液膜覆蓋的狀態。When the first chemical liquid is supplied, the control device 101 (control unit 102) determines whether the first predetermined time T1 has passed (step S13). Specifically, the control unit 102 starts timing in response to the fact that an opening signal has been sent to the first valve VA1. The first predetermined time T1 is stored in the memory unit 103 to display a value that is pre-set as a time interval for supplying the first chemical liquid to the first nozzle 41. The control unit 102 determines whether the timing result has reached the first predetermined time T1. The upper surface of the substrate W is covered with a liquid film of the first chemical liquid during the first predetermined time T1.

控制裝置101(控制部102)係在判定成尚未經過第一既定時間T1之情形中(步驟S13中的「否」)重複步驟S13的處理。在判定成已經經過第一既定時間T1之情形中(步驟S13中的「是」),控制裝置101(控制部102)係控制第二閥VA2(後行閥),開始朝第二噴嘴42(後行噴嘴)供給第一清洗液(後行處理液)(步驟S14)。具體而言,控制裝置101(控制部102)係對第二閥VA2發送打開訊號。第二閥VA2係因應接收到打開訊號之事態從關閉狀態切換成打開狀態。結果,開始朝第二噴嘴42供給第一清洗液。When it is determined that the first predetermined time T1 has not passed ("No" in step S13), the control device 101 (control unit 102) repeats the processing of step S13. When it is determined that the first predetermined time T1 has passed ("Yes" in step S13), the control device 101 (control unit 102) controls the second valve VA2 (after-line valve) to start supplying the first cleaning liquid (after-line treatment liquid) to the second nozzle 42 (after-line nozzle) (step S14). Specifically, the control device 101 (control unit 102) sends an opening signal to the second valve VA2. The second valve VA2 switches from a closed state to an open state in response to receiving the opening signal. As a result, the first cleaning liquid starts to be supplied to the second nozzle 42.

與第一藥液同樣地,在開始朝第二噴嘴42供給第一清洗液直至第一清洗液從第二噴出口42a噴出為止之期間發生第一延遲時間DT1。Similar to the first chemical liquid, the first delay time DT1 occurs from the start of supply of the first cleaning liquid to the second nozzle 42 until the first cleaning liquid is ejected from the second ejection port 42a.

在開始朝第二噴嘴42(後行噴嘴)供給第一清洗液(後行處理液)後,控制裝置101(控制部102)係判定是否檢測到開始從第二噴出口42a(後行噴嘴的噴出口)噴出第一清洗液(後行處理液)(步驟S15)。After the first cleaning liquid (subsequent treatment liquid) starts to be supplied to the second nozzle 42 (subsequent nozzle), the control device 101 (control unit 102) determines whether the start of ejection of the first cleaning liquid (subsequent treatment liquid) from the second nozzle port 42a (the nozzle port of the subsequent nozzle) is detected (step S15).

具體而言,控制裝置101(控制部102)係基於從拍攝裝置110輸入的拍攝圖像SG判定是否檢測到開始從第二噴出口42a噴出第一清洗液。詳細而言,控制裝置101(控制部102)係從拍攝圖像SG的各個幀抽取第一圖像處理區域KA1(參照圖5以及圖6)。接著,控制裝置101(控制部102)係對各個第一圖像處理區域KA1進行圖像處理,判定是否檢測到開始從第二噴出口42a噴出第一清洗液。Specifically, the control device 101 (control unit 102) determines whether the start of ejection of the first cleaning liquid from the second ejection port 42a is detected based on the captured image SG input from the imaging device 110. Specifically, the control device 101 (control unit 102) extracts the first image processing area KA1 from each frame of the captured image SG (see FIG. 5 and FIG. 6). Then, the control device 101 (control unit 102) performs image processing on each first image processing area KA1 to determine whether the start of ejection of the first cleaning liquid from the second ejection port 42a is detected.

控制裝置101(控制部102)係在判定成尚未檢測到開始從第二噴出口42a噴出第一清洗液之情形中(步驟S15中的「否」)重複步驟S15的處理。在判定成檢測到開始從第二噴出口42a(後行噴嘴的噴出口)噴出第一清洗液(後行處理液)之情形中(步驟S15中的「是」),控制裝置101(控制部102)係控制第一閥VA1(先行閥)執行關閉動作控制處理(步驟S16),該關閉動作控制處理(步驟S16)係停止朝第一噴嘴41(先行噴嘴)供給第一藥液(先行處理液)。在本實施形態中,控制裝置101(控制部102)係在已經從第二噴出口42a噴出第一清洗液的時序停止供給第一藥液。The control device 101 (control unit 102) repeats the process of step S15 when it is determined that the start of ejection of the first cleaning liquid from the second nozzle 42a has not been detected ("No" in step S15). When it is determined that the start of ejection of the first cleaning liquid (the subsequent treatment liquid) from the second nozzle 42a (the nozzle of the subsequent nozzle) has been detected ("Yes" in step S15), the control device 101 (control unit 102) controls the first valve VA1 (pilot valve) to perform a closing motion control process (step S16), and the closing motion control process (step S16) stops the supply of the first chemical solution (the preceding treatment liquid) to the first nozzle 41 (pilot nozzle). In the present embodiment, the control device 101 (control unit 102) stops supplying the first chemical solution when the first cleaning solution is ejected from the second ejection port 42a.

具體而言,控制裝置101(控制部102)係對第一閥VA1發送關閉訊號。第一閥VA1係因應已經接收到關閉訊號之事態而從打開狀態切換成關閉狀態。結果,停止朝第一噴嘴41供給第一藥液。Specifically, the control device 101 (control unit 102) sends a closing signal to the first valve VA1. In response to receiving the closing signal, the first valve VA1 switches from an open state to a closed state. As a result, the supply of the first chemical solution to the first nozzle 41 is stopped.

再者,在本實施形態中,控制裝置101(控制部102)係對第一倒吸閥SB1發送吸入訊號。第一倒吸閥SB1係基於吸入訊號執行吸入動作,吸入第一液體供給配管81內的第一藥液(倒吸處理)。第一閥VA1的關閉動作以及第一倒吸閥SB1的吸入動作係彼此並行地執行。結果,第一閥41的前端側的第一藥液係被吸回並停止噴出第一藥液。Furthermore, in this embodiment, the control device 101 (control unit 102) sends a suction signal to the first back suction valve SB1. The first back suction valve SB1 performs a suction action based on the suction signal to suck the first liquid medicine in the first liquid supply pipe 81 (back suction process). The closing action of the first valve VA1 and the suction action of the first back suction valve SB1 are performed in parallel with each other. As a result, the first liquid medicine on the front end side of the first valve 41 is sucked back and the spraying of the first liquid medicine stops.

如圖9所示,在停止供給第一藥液後,第一噴嘴移動機構5係使第二噴嘴42從待機位置移動至處理位置(步驟S21)。此外,在第二噴嘴42(先行噴嘴)位於待機位置時,開始從第二噴出口42a(先行噴嘴的噴出口)噴出第一清洗液(先行處理液)。因此,第二噴嘴42(先行噴嘴)係在從待機位置移動至處理位置為止之期間將第一清洗液(先行處理液)供給至基板W。接著,在移動至處理位置後,第二噴嘴42(先行噴嘴)係從處理位置將第一清洗液(先行處理液)供給至基板W。As shown in FIG. 9 , after the supply of the first chemical solution is stopped, the first nozzle moving mechanism 5 moves the second nozzle 42 from the standby position to the processing position (step S21). In addition, when the second nozzle 42 (pre-nozzle) is at the standby position, the first cleaning liquid (pre-processing liquid) starts to be ejected from the second nozzle outlet 42a (the nozzle outlet of the pre-nozzle). Therefore, the second nozzle 42 (pre-nozzle) supplies the first cleaning liquid (pre-processing liquid) to the substrate W during the period from the standby position to the processing position. Then, after moving to the processing position, the second nozzle 42 (pre-nozzle) supplies the first cleaning liquid (pre-processing liquid) to the substrate W from the processing position.

在第二噴嘴42移動至處理位置後,控制裝置101(控制部102)係判定是否已經經過第二既定時間T2(步驟S22)。具體而言,控制部102係因應已經對第二閥VA2(先行閥)發送打開訊號之事態開始計時。第二既定時間T2係被記憶於記憶部103,用以顯示作為用以對第二噴嘴42供給第一清洗液之時間間隔而預先被制定的值。控制部102係判定計時結果是否已經到達第二既定時間T2。基板W的上表面係在經過第二既定時間T2之期間成為被第一清洗液的液膜覆蓋的狀態。換言之,覆蓋基板W的上表面之液膜係從第一藥液的液膜被置換成第一清洗液的液膜。After the second nozzle 42 moves to the processing position, the control device 101 (control unit 102) determines whether the second predetermined time T2 has passed (step S22). Specifically, the control unit 102 starts timing in response to the fact that an opening signal has been sent to the second valve VA2 (pilot valve). The second predetermined time T2 is stored in the memory unit 103 to display a value that is pre-set as a time interval for supplying the first cleaning liquid to the second nozzle 42. The control unit 102 determines whether the timing result has reached the second predetermined time T2. The upper surface of the substrate W is covered with a liquid film of the first cleaning liquid during the second predetermined time T2. In other words, the liquid film covering the upper surface of the substrate W is replaced from the liquid film of the first chemical liquid to the liquid film of the first cleaning liquid.

控制裝置101(控制部102)係在判定成尚未經過第二既定時間T2之情形中(步驟S22中的「否」)重複步驟S22的處理。在判定成已經經過第二既定時間T2之情形中(步驟S22中的「是」),控制裝置101(控制部102)係控制第三閥VA3(後行閥),開始朝第三噴嘴43(後行噴嘴)供給第二清洗液(後行處理液)(步驟S23)。具體而言,控制裝置101(控制部102)係對第三閥VA3發送打開訊號。第三閥VA3係因應接收到打開訊號之事態從關閉狀態切換成打開狀態。結果,開始朝第三噴嘴43供給第二清洗液。When the control device 101 (control unit 102) determines that the second predetermined time T2 has not passed ("No" in step S22), it repeats the processing of step S22. When it is determined that the second predetermined time T2 has passed ("Yes" in step S22), the control device 101 (control unit 102) controls the third valve VA3 (after-line valve) to start supplying the second cleaning liquid (after-line treatment liquid) to the third nozzle 43 (after-line nozzle) (step S23). Specifically, the control device 101 (control unit 102) sends an opening signal to the third valve VA3. The third valve VA3 switches from a closed state to an open state in response to receiving the opening signal. As a result, the second cleaning liquid starts to be supplied to the third nozzle 43.

與第一藥液同樣地,在開始朝第三噴嘴43供給第二清洗液直至第二清洗液從第三噴出口43a噴出為止之期間發生第二延遲時間DT2。Similar to the first chemical liquid, the second delay time DT2 occurs from the start of supply of the second cleaning liquid to the third nozzle 43 until the second cleaning liquid is ejected from the third ejection port 43a.

在開始朝第三噴嘴43(後行噴嘴)供給第二清洗液(後行處理液)後,與第一清洗液同樣地,控制裝置101(控制部102)係判定是否檢測到開始從第三噴出口43a(後行噴嘴的噴出口)噴出第二清洗液(後行處理液)(步驟S24)。After the second cleaning liquid (subsequent treatment liquid) starts to be supplied to the third nozzle 43 (subsequent nozzle), the control device 101 (control unit 102) determines whether the start of ejection of the second cleaning liquid (subsequent treatment liquid) from the third nozzle 43a (the nozzle of the subsequent nozzle) is detected in the same manner as the first cleaning liquid (step S24).

控制裝置101(控制部102)係在判定成尚未檢測到開始從第三噴出口43a噴出第二清洗液之情形中(步驟S24中的「否」)重複步驟S24的處理。在判定成檢測到開始從第三噴出口43a(後行噴嘴的噴出口)噴出第二清洗液(後行處理液)之情形中(步驟S24中的「是」),控制裝置101(控制部102)係控制第二閥VA2(先行閥)執行關閉動作控制處理(步驟S25),該關閉動作控制處理(步驟S25)係停止朝第二噴嘴42(先行噴嘴)供給第一清洗液(先行處理液)。在本實施形態中,控制裝置101(控制部102)係在已經從第三噴出口43a噴出第二清洗液的時序停止供給第一清洗液。The control device 101 (control unit 102) repeats the process of step S24 when it is determined that the start of ejection of the second cleaning liquid from the third nozzle 43a has not been detected ("No" in step S24). When it is determined that the start of ejection of the second cleaning liquid (post-treatment liquid) from the third nozzle 43a (the nozzle of the post-nozzle) has been detected ("Yes" in step S24), the control device 101 (control unit 102) controls the second valve VA2 (pilot valve) to perform a closing motion control process (step S25), and the closing motion control process (step S25) stops supplying the first cleaning liquid (pre-treatment liquid) to the second nozzle 42 (pilot nozzle). In the present embodiment, the control device 101 (control unit 102) stops supplying the first cleaning liquid when the second cleaning liquid is ejected from the third ejection port 43a.

具體而言,控制裝置101(控制部102)係對第二閥VA2發送關閉訊號。第二閥VA2係因應已經接收到關閉訊號之事態而從打開狀態切換成關閉狀態。結果,停止朝第二噴嘴42供給第一清洗液。Specifically, the control device 101 (control unit 102) sends a closing signal to the second valve VA2. In response to receiving the closing signal, the second valve VA2 switches from an open state to a closed state. As a result, the supply of the first cleaning liquid to the second nozzle 42 is stopped.

再者,在本實施形態中,控制裝置101(控制部102)係對第二倒吸閥SB2發送吸入訊號。第二倒吸閥SB2係基於吸入訊號執行吸入動作,吸入第二液體供給配管82內的第一清洗液(倒吸處理)。第二閥VA2的關閉動作以及第二倒吸閥SB2的吸入動作係彼此並行地執行。結果,第二閥42的前端側的第一清洗液係被吸回並停止噴出第一清洗液。Furthermore, in this embodiment, the control device 101 (control unit 102) sends a suction signal to the second back suction valve SB2. The second back suction valve SB2 performs a suction action based on the suction signal to suck the first cleaning liquid in the second liquid supply pipe 82 (back suction processing). The closing action of the second valve VA2 and the suction action of the second back suction valve SB2 are performed in parallel with each other. As a result, the first cleaning liquid on the front end side of the second valve 42 is sucked back and the spraying of the first cleaning liquid is stopped.

在停止供給第一清洗液後,第一噴嘴移動機構5係使第一噴嘴41以及第二噴嘴42移動至第一退避區域(步驟S26)。此外,在停止噴出第一清洗液之前開始噴出第二清洗液。因此,在第一噴嘴41以及第二噴嘴42移動至第一退避區域之期間,從第三噴嘴43(先行噴嘴)對基板W的上表面供給第二清洗液(先行處理液)。After the supply of the first cleaning liquid is stopped, the first nozzle moving mechanism 5 moves the first nozzle 41 and the second nozzle 42 to the first retreat area (step S26). In addition, the second cleaning liquid is started to be sprayed before the spraying of the first cleaning liquid is stopped. Therefore, while the first nozzle 41 and the second nozzle 42 are moving to the first retreat area, the second cleaning liquid (preliminary treatment liquid) is supplied to the upper surface of the substrate W from the third nozzle 43 (preliminary nozzle).

如圖10所示,在第一噴嘴41以及第二噴嘴42移動至第一退避區域後,第二噴嘴移動機構6開始移動第四噴嘴44(步驟S31)。As shown in FIG. 10 , after the first nozzle 41 and the second nozzle 42 move to the first retreat area, the second nozzle moving mechanism 6 starts to move the fourth nozzle 44 (step S31 ).

當第四噴嘴44開始移動時,控制裝置101(控制部102)係判定是否已經經過第三既定時間T3(步驟S32)。在直至經過第三既定時間T3為止之期間,第四噴嘴44係從第二退避區域移動至處理位置。When the fourth nozzle 44 starts to move, the control device 101 (control unit 102) determines whether the third predetermined time T3 has passed (step S32). During the period until the third predetermined time T3 has passed, the fourth nozzle 44 moves from the second retreat area to the processing position.

具體而言,控制部102係因應第四噴嘴44開始移動之事態開始計時。第三既定時間T3係被記憶於記憶部103,用以顯示作為用以對第三噴嘴43供給第二清洗液之時間間隔而預先被制定的值。控制部102係判定計時結果是否已經到達第三既定時間T3。Specifically, the control unit 102 starts timing in response to the fourth nozzle 44 starting to move. The third predetermined time T3 is stored in the memory unit 103 to display a value that is predetermined as a time interval for supplying the second cleaning liquid to the third nozzle 43. The control unit 102 determines whether the timing result has reached the third predetermined time T3.

控制裝置101(控制部102)係在判定成尚未經過第三既定時間T3之情形中(步驟S32中的「否」)重複步驟S32的處理。在判定成已經經過第三既定時間T3之情形中(步驟S32中的「是」),控制裝置101(控制部102)係控制第四閥VA4(後行閥),開始朝第四噴嘴44(後行噴嘴)供給第二藥液(後行處理液)(步驟S33)。具體而言,控制裝置101(控制部102)係對第四閥VA4發送打開訊號。第四閥VA4係因應接收到打開訊號之事態從關閉狀態切換成打開狀態。結果,開始朝第四噴嘴44供給第二藥液。When the control device 101 (control unit 102) determines that the third predetermined time T3 has not passed ("No" in step S32), it repeats the processing of step S32. When it is determined that the third predetermined time T3 has passed ("Yes" in step S32), the control device 101 (control unit 102) controls the fourth valve VA4 (post-flow valve) to start supplying the second liquid medicine (post-flow treatment liquid) to the fourth nozzle 44 (post-flow nozzle) (step S33). Specifically, the control device 101 (control unit 102) sends an opening signal to the fourth valve VA4. The fourth valve VA4 switches from a closed state to an open state in response to receiving the opening signal. As a result, the second liquid medicine starts to be supplied to the fourth nozzle 44.

與第一藥液同樣地,在開始朝第四噴嘴44供給第二藥液直至第二藥液從第四噴出口44a噴出為止之期間發生第三延遲時間DT3。Similar to the first chemical liquid, the third delay time DT3 occurs from the start of supply of the second chemical liquid to the fourth nozzle 44 until the second chemical liquid is ejected from the fourth ejection port 44a.

在開始朝第四噴嘴44(後行噴嘴)供給第二藥液(後行處理液)後,與第一清洗液同樣地,控制裝置101(控制部102)係判定是否檢測到開始從第四噴出口44a(後行噴嘴的噴出口)噴出第二藥液(後行處理液)(步驟S34)。After the second liquid chemical (subsequent treatment liquid) starts to be supplied to the fourth nozzle 44 (subsequent nozzle), the control device 101 (control unit 102) determines whether the start of ejection of the second liquid chemical (subsequent treatment liquid) from the fourth nozzle 44a (the nozzle of the subsequent nozzle) is detected in the same manner as the first cleaning liquid (step S34).

控制裝置101(控制部102)係在判定成尚未檢測到開始從第四噴出口44a噴出第二藥液之情形中(步驟S34中的「否」)重複步驟S34的處理。在判定成檢測到開始從第四噴出口44a(後行噴嘴的噴出口)噴出第二藥液(後行處理液)之情形中(步驟S34中的「是」),控制裝置101(控制部102)係控制第三閥VA3(先行閥)執行關閉動作控制處理(步驟S35),該關閉動作控制處理(步驟S35)係停止朝第三噴嘴43(先行噴嘴)供給第二清洗液(先行處理液)。在本實施形態中,控制裝置101(控制部102)係在已經從第四噴出口44a噴出第二藥液的時序停止供給第二清洗液。The control device 101 (control unit 102) repeats the process of step S34 when it is determined that the start of ejection of the second liquid from the fourth nozzle 44a has not been detected ("No" in step S34). When it is determined that the start of ejection of the second liquid (post-treatment liquid) from the fourth nozzle 44a (the nozzle of the post-nozzle) has been detected ("Yes" in step S34), the control device 101 (control unit 102) controls the third valve VA3 (pilot valve) to perform a closing motion control process (step S35), and the closing motion control process (step S35) stops the supply of the second cleaning liquid (pre-treatment liquid) to the third nozzle 43 (pilot nozzle). In the present embodiment, the control device 101 (control unit 102) stops supplying the second cleaning liquid at the timing when the second chemical liquid is ejected from the fourth ejection port 44a.

具體而言,控制裝置101(控制部102)係對第三閥VA3發送關閉訊號。第三閥VA3係因應已經接收到關閉訊號之事態而從打開狀態切換成關閉狀態。結果,停止朝第三噴嘴43供給第二清洗液。Specifically, the control device 101 (control unit 102) sends a closing signal to the third valve VA3. The third valve VA3 switches from an open state to a closed state in response to receiving the closing signal. As a result, the supply of the second cleaning liquid to the third nozzle 43 is stopped.

再者,在本實施形態中,控制裝置101(控制部102)係對第三倒吸閥SB3發送吸入訊號。第三倒吸閥SB3係基於吸入訊號執行吸入動作,吸入第三液體供給配管83內的第二清洗液(倒吸處理)。第三閥VA3的關閉動作以及第三倒吸閥SB3的吸入動作係彼此並行地執行。結果,第三噴嘴43的前端側的第二清洗液係被吸回並停止噴出第二清洗液。Furthermore, in this embodiment, the control device 101 (control unit 102) sends a suction signal to the third back suction valve SB3. The third back suction valve SB3 performs a suction action based on the suction signal to suck the second cleaning liquid in the third liquid supply pipe 83 (back suction processing). The closing action of the third valve VA3 and the suction action of the third back suction valve SB3 are performed in parallel with each other. As a result, the second cleaning liquid on the front end side of the third nozzle 43 is sucked back and the spraying of the second cleaning liquid is stopped.

在停止供給第二清洗液後,控制裝置101(控制部102)係判定是否已經經過第四既定時間T4(步驟S36)。具體而言,控制部102係因應已經對第四閥VA4(先行閥)發送打開訊號之事態開始計時。第四既定時間T4係被記憶於記憶部103,用以顯示作為用以對第四噴嘴44(先行噴嘴)供給第二藥液(先行處理液)之時間間隔而預先被制定的值。控制部102係判定計時結果是否已經到達第四既定時間T4。基板W的上表面係在經過第四既定時間T4之期間成為被第二藥液的液膜覆蓋之狀態。換言之,覆蓋基板W的上表面之液膜係從清洗液的液膜被置換成第二藥液的液膜。After the supply of the second cleaning liquid is stopped, the control device 101 (control unit 102) determines whether the fourth predetermined time T4 has passed (step S36). Specifically, the control unit 102 starts timing in response to the fact that an opening signal has been sent to the fourth valve VA4 (pilot valve). The fourth predetermined time T4 is stored in the memory unit 103 to display a value that is predetermined as a time interval for supplying the second liquid (preliminary treatment liquid) to the fourth nozzle 44 (pilot nozzle). The control unit 102 determines whether the timing result has reached the fourth predetermined time T4. The upper surface of the substrate W is covered with a liquid film of the second liquid during the fourth predetermined time T4. In other words, the liquid film covering the upper surface of the substrate W is replaced from the liquid film of the cleaning liquid to the liquid film of the second chemical liquid.

控制裝置101(控制部102)係在判定成尚未經過第四既定時間T4之情形中(步驟S36中的「否」)重複步驟S36的處理。在判定成已經經過第四既定時間T4之情形中(步驟S36中的「是」),與圖9所示的步驟S23同樣地,控制裝置101(控制部102)係控制第三閥VA3(後行閥),開始朝第三噴嘴43(後行噴嘴)供給第二清洗液(後行處理液)(步驟S37)。此外,如上文所說明般,在對第三閥VA3發送打開訊號後直至第三噴嘴43開始噴出第二清洗液為止之期間發生延遲時間(第四延遲時間DT4)。The control device 101 (control unit 102) repeats the processing of step S36 when it is determined that the fourth predetermined time T4 has not passed ("No" in step S36). When it is determined that the fourth predetermined time T4 has passed ("Yes" in step S36), the control device 101 (control unit 102) controls the third valve VA3 (after-action valve) to start supplying the second cleaning liquid (after-action treatment liquid) to the third nozzle 43 (after-action nozzle) (step S37) in the same manner as step S23 shown in FIG. 9. In addition, as described above, a delay time (fourth delay time DT4) occurs from the time the opening signal is sent to the third valve VA3 until the third nozzle 43 starts to spray the second cleaning liquid.

如圖11所示,在開始朝第三噴嘴43(後行噴嘴)供給第二清洗液(後行處理液)後,與如圖9所示的步驟S24同樣地,控制裝置101(控制部102)係判定是否檢測到開始從第三噴出口43a(後行噴嘴的噴出口)噴出第二清洗液(後行處理液)(步驟S41)。As shown in Figure 11, after the second cleaning liquid (subsequent treatment liquid) is supplied to the third nozzle 43 (subsequent nozzle), the control device 101 (control unit 102) determines whether it is detected that the second cleaning liquid (subsequent treatment liquid) is started to be sprayed from the third nozzle 43a (the nozzle of the subsequent nozzle) (step S41), similar to step S24 shown in Figure 9.

控制裝置101(控制部102)係在判定成尚未檢測到開始從第三噴出口43a噴出第二清洗液之情形中(步驟S41中的「否」)重複步驟S41的處理。在判定成檢測到開始從第三噴出口43a(後行噴嘴的噴出口)噴出第二清洗液(後行處理液)之情形中(步驟S41中的「是」),控制裝置101(控制部102)係控制第四閥VA4(先行閥)執行關閉動作控制處理(步驟S42),該關閉動作控制處理(步驟S42)係停止朝第四噴嘴44(先行噴嘴)供給第二藥液(先行處理液)。在本實施形態中,控制裝置101(控制部102)係在已經從第三噴出口43a噴出第二清洗液的時序停止供給第二藥液。The control device 101 (control unit 102) repeats the process of step S41 when it is determined that the start of ejection of the second cleaning liquid from the third nozzle 43a has not been detected ("No" in step S41). When it is determined that the start of ejection of the second cleaning liquid (post-treatment liquid) from the third nozzle 43a (the nozzle of the post-nozzle) has been detected ("Yes" in step S41), the control device 101 (control unit 102) controls the fourth valve VA4 (pilot valve) to perform a closing motion control process (step S42), and the closing motion control process (step S42) stops the supply of the second liquid (pre-treatment liquid) to the fourth nozzle 44 (pilot nozzle). In the present embodiment, the control device 101 (control unit 102) stops supplying the second chemical solution at the timing when the second cleaning solution is ejected from the third ejection port 43a.

具體而言,控制裝置101(控制部102)係對第四閥VA4發送關閉訊號。第四閥VA4係因應已經接收到關閉訊號之事態而從打開狀態切換成關閉狀態。結果,停止朝第四噴嘴44供給第二藥液。Specifically, the control device 101 (control unit 102) sends a closing signal to the fourth valve VA4. In response to receiving the closing signal, the fourth valve VA4 switches from an open state to a closed state. As a result, the supply of the second chemical solution to the fourth nozzle 44 is stopped.

再者,在本實施形態中,控制裝置101(控制部102)係對第四倒吸閥SB4發送吸入訊號。第四倒吸閥SB4係基於吸入訊號執行吸入動作,吸入第四液體供給配管84內的第二藥液(倒吸處理)。第四閥VA4的關閉動作以及第四倒吸閥SB4的吸入動作係彼此並行地執行。結果,第四閥44的前端側的第二藥液係被吸回並停止噴出第二藥液。Furthermore, in this embodiment, the control device 101 (control unit 102) sends an intake signal to the fourth back suction valve SB4. The fourth back suction valve SB4 performs an intake action based on the intake signal and inhales the second liquid medicine in the fourth liquid supply pipe 84 (back suction processing). The closing action of the fourth valve VA4 and the intake action of the fourth back suction valve SB4 are performed in parallel with each other. As a result, the second liquid medicine on the front end side of the fourth valve 44 is sucked back and the ejection of the second liquid medicine stops.

在停止供給第二藥液後,控制裝置101(控制部102)係判定是否已經經過第五既定時間T5(步驟S43)。具體而言,控制部102係因應已經對第三閥VA3發送打開訊號之事態開始計時。第五既定時間T5係被記憶於記憶部103,用以顯示作為用以對第三噴嘴43供給第二清洗液之時間間隔而預先被制定的值。控制部102係判定計時結果是否已經到達第五既定時間T5。基板W的上表面係在經過第五既定時間T5之期間成為被第二清洗液的液膜覆蓋的狀態。換言之,覆蓋基板W的上表面之液膜係從第二藥液的液膜被置換成第二清洗液的液膜。After stopping the supply of the second chemical solution, the control device 101 (control unit 102) determines whether the fifth predetermined time T5 has passed (step S43). Specifically, the control unit 102 starts timing in response to the fact that an opening signal has been sent to the third valve VA3. The fifth predetermined time T5 is stored in the memory unit 103 to display a value that is predetermined as a time interval for supplying the second cleaning liquid to the third nozzle 43. The control unit 102 determines whether the timing result has reached the fifth predetermined time T5. The upper surface of the substrate W is covered with a liquid film of the second cleaning liquid during the fifth predetermined time T5. In other words, the liquid film covering the upper surface of the substrate W is replaced from the liquid film of the second chemical solution to the liquid film of the second cleaning liquid.

控制裝置101(控制部102)係在判定成尚未經過第五既定時間T5之情形中(步驟S43中的「否」)重複步驟S43的處理。在判定成已經經過第五既定時間T5之情形中(步驟S43中的「是」),與圖10所示的步驟S35同樣地,控制裝置101(控制部102)係控制第三閥VA3,停止朝第三噴嘴43供給第二清洗液。When the control device 101 (control unit 102) determines that the fifth predetermined time T5 has not passed ("No" in step S43), the control device 101 (control unit 102) repeats the processing of step S43. When the control device 101 (control unit 102) determines that the fifth predetermined time T5 has passed ("Yes" in step S43), the control device 101 (control unit 102) controls the third valve VA3 to stop supplying the second cleaning liquid to the third nozzle 43, similarly to step S35 shown in FIG. 10.

在停止供給第二清洗液後,基板旋轉部7係使基板W的旋轉速度增加,從而使基板W乾燥(步驟S45)。當停止供給第二清洗液後經過預定時間時,基板旋轉部7係使基板W停止旋轉。結果,基板處理裝置100的動作(基板處理方法)係遷移至圖7所示的步驟S5。After the supply of the second cleaning liquid is stopped, the substrate rotating unit 7 increases the rotation speed of the substrate W to dry the substrate W (step S45). When a predetermined time has passed after the supply of the second cleaning liquid is stopped, the substrate rotating unit 7 stops rotating the substrate W. As a result, the operation of the substrate processing apparatus 100 (substrate processing method) is transferred to step S5 shown in FIG. 7 .

以上,參照圖1至圖11說明了本實施形態的基板處理方法(基板處理裝置100的動作)。此外,圖7至圖11所示的基板處理方法係藉由基板處理裝置100針對每個處理部1(處理室2)執行。The substrate processing method (operation of the substrate processing apparatus 100 ) of the present embodiment has been described above with reference to FIGS. 1 to 11 . The substrate processing method shown in FIGS. 7 to 11 is executed by the substrate processing apparatus 100 for each processing unit 1 (processing chamber 2 ).

接著,參照圖1至圖12說明本實施形態的基板處理裝置100。圖12係顯示第一閥VA1至第四閥VA4的開閉動作以及拍攝裝置110所為的檢測動作之時序圖。此外,在圖12中,橫軸係顯示時刻t、t1至t9。Next, the substrate processing apparatus 100 of the present embodiment will be described with reference to Fig. 1 to Fig. 12. Fig. 12 is a timing chart showing the opening and closing actions of the first valve VA1 to the fourth valve VA4 and the detection action performed by the camera 110. In Fig. 12, the horizontal axis shows the time t, t1 to t9.

如圖12所示,當第一噴嘴41移動至處理位置時,控制裝置101(控制部102)係朝第一閥VA1發送打開訊號。結果,第一閥VA1(先行閥)係從關閉狀態切換成打開狀態,開始朝第一噴嘴41供給第一藥液,第一藥液(先行處理液)係從第一噴出口41a(先行噴嘴的噴出口)被供給至基板W。As shown in FIG12 , when the first nozzle 41 moves to the processing position, the control device 101 (control unit 102) sends an opening signal to the first valve VA1. As a result, the first valve VA1 (pilot valve) switches from a closed state to an open state, and the first chemical liquid begins to be supplied to the first nozzle 41. The first chemical liquid (pilot processing liquid) is supplied to the substrate W from the first nozzle outlet 41a (the nozzle outlet of the pilot nozzle).

當朝第一閥VA1發送打開訊號後經過第一既定時間T1成為時刻t2時,控制裝置101(控制部102)係朝第二閥VA2發送打開訊號。結果,第二閥VA2(後行閥)係從關閉狀態切換成打開狀態,開始朝第二噴嘴42(後行噴嘴)供給第一清洗液(後行處理液)。When the first predetermined time T1 elapses after the first valve VA1 sends an opening signal to the first valve VA1 and the time t2 comes, the control device 101 (control unit 102) sends an opening signal to the second valve VA2. As a result, the second valve VA2 (rear valve) switches from a closed state to an open state, and starts to supply the first cleaning liquid (rear treatment liquid) to the second nozzle 42 (rear nozzle).

如上文所說明般,第二閥VA2係從關閉狀態切換成打開狀態,在直至藉由第二噴嘴42噴出第一清洗液為止之期間發生第一延遲時間DT1。因此,拍攝裝置110係在從時刻t2經過第一延遲時間DT1成為時刻t3之時序檢測第一清洗液的開始噴出。結果,控制裝置101(控制部102)係在從時刻t2經過第一延遲時間DT1成為時刻t3之時序對第一閥VA1發送關閉訊號,將第一閥VA1從打開狀態切換成關閉狀態。當第一閥VA1(先行閥)從打開狀態切換成關閉狀態時,停止朝第一噴嘴41供給第一藥液,從而停止從第一噴出口41a(先行噴嘴的噴出口)朝基板W供給第一藥液(先行處理液)。As described above, the second valve VA2 is switched from the closed state to the open state, and the first delay time DT1 occurs until the first cleaning liquid is sprayed out by the second nozzle 42. Therefore, the camera 110 detects the start of spraying of the first cleaning liquid at the timing from the moment t2 to the moment t3 after the first delay time DT1. As a result, the control device 101 (control unit 102) sends a closing signal to the first valve VA1 at the timing from the moment t2 to the moment t3 after the first delay time DT1, switching the first valve VA1 from the open state to the closed state. When the first valve VA1 (pilot valve) is switched from the open state to the closed state, the supply of the first chemical solution to the first nozzle 41 is stopped, and the supply of the first chemical solution (preliminary treatment solution) to the substrate W from the first ejection port 41a (the ejection port of the pilot nozzle) is stopped.

當朝第二閥VA2(先行閥)發送打開訊號後經過第二既定時間T2成為時刻t4時,控制裝置101(控制部102)係朝第三閥VA3(後行閥)發送打開訊號。結果,第三閥VA3係從關閉狀態切換成打開狀態,開始朝第三噴嘴43(後行噴嘴)供給第二清洗液(後行處理液)。如上文所說明般,在第三閥VA3成為打開狀態後直至藉由第三噴嘴43噴出第二清洗液為止之期間發生第二延遲時間DT2。When the second predetermined time T2 elapses after the second valve VA2 (pre-valve) sends an opening signal to the second valve VA2 (pre-valve) and the time t4 is reached, the control device 101 (control unit 102) sends an opening signal to the third valve VA3 (post-valve). As a result, the third valve VA3 switches from a closed state to an open state, and starts to supply the second cleaning liquid (post-treatment liquid) to the third nozzle 43 (post-nozzle). As described above, the second delay time DT2 occurs from the time when the third valve VA3 becomes open until the second cleaning liquid is sprayed out through the third nozzle 43.

因此,拍攝裝置110係在從時刻t4經過第二延遲時間DT2成為時刻t5之時序檢測第二清洗液(後行處理液)的開始噴出。結果,控制裝置101(控制部102)係在從時刻t4經過第二延遲時間DT2成為時刻t5之時序對第二閥VA2發送關閉訊號,將第二閥VA2從打開狀態切換成關閉狀態。當第二閥VA2(先行閥)從打開狀態切換成關閉狀態時,停止朝第二噴嘴42供給第一清洗液,從而停止從第二噴出口42a(先行噴嘴的噴出口)朝基板W供給第一清洗液(先行處理液)。Therefore, the camera 110 detects the start of ejection of the second cleaning liquid (post-processing liquid) at the timing from the moment t4 to the moment t5 after the second delay time DT2. As a result, the control device 101 (control unit 102) sends a closing signal to the second valve VA2 at the timing from the moment t4 to the moment t5 after the second delay time DT2, switching the second valve VA2 from the open state to the closed state. When the second valve VA2 (pre-valve) switches from the open state to the closed state, the supply of the first cleaning liquid to the second nozzle 42 is stopped, thereby stopping the supply of the first cleaning liquid (pre-processing liquid) from the second nozzle outlet 42a (the nozzle outlet of the pre-nozzle) to the substrate W.

當朝第三閥VA3(先行閥)發送打開訊號後經過第三既定時間T3成為時刻t6時,控制裝置101(控制部102)係朝第四閥VA4(先行閥)發送打開訊號。結果,第四閥VA4係從關閉狀態切換成打開狀態,開始朝第四噴嘴44(後行噴嘴)供給第二藥液(後行處理液)。如上文所說明般,在第四閥VA4成為打開狀態直至藉由第四噴嘴44噴出第二藥液為止之期間發生第三延遲時間DT3。When the third predetermined time T3 elapses after the third valve VA3 (pre-valve) sends an opening signal to the third valve VA3 (pre-valve) and the time t6 is reached, the control device 101 (control unit 102) sends an opening signal to the fourth valve VA4 (pre-valve). As a result, the fourth valve VA4 switches from a closed state to an open state, and starts to supply the second liquid medicine (post-treatment liquid) to the fourth nozzle 44 (post-nozzle). As described above, the third delay time DT3 occurs during the period from when the fourth valve VA4 becomes open to when the second liquid medicine is sprayed out through the fourth nozzle 44.

因此,拍攝裝置110係在從時刻t6經過第三延遲時間DT3成為時刻t7之時序檢測第二藥液(後行處理液)的開始噴出。結果,控制裝置101(控制部102)係在從時刻t6經過第三延遲時間DT3成為時刻t7之時序對第三閥VA3發送關閉訊號,將第三閥VA3從打開狀態切換成關閉狀態。當第三閥VA3(先行閥)從打開狀態切換成關閉狀態時,停止朝第三噴嘴43供給第二清洗液,從而停止從第三噴出口43a(先行噴嘴的噴出口)朝基板W供給第二清洗液(先行處理液)。Therefore, the camera 110 detects the start of ejection of the second chemical solution (post-processing solution) at the timing from the time t6 to the time t7 after the third delay time DT3. As a result, the control device 101 (control unit 102) sends a closing signal to the third valve VA3 at the timing from the time t6 to the time t7 after the third delay time DT3. The third valve VA3 is switched from the open state to the closed state. When the third valve VA3 (pre-valve) is switched from the open state to the closed state, the supply of the second cleaning solution to the third nozzle 43 is stopped, thereby stopping the supply of the second cleaning solution (pre-processing solution) from the third nozzle outlet 43a (the nozzle outlet of the pre-nozzle) to the substrate W.

當朝第四閥VA4(先行閥)發送打開訊號後經過第四既定時間T4成為時刻t8後,控制裝置101(控制部102)係朝第三閥VA3(後行閥)發送打開訊號。結果,第三閥VA3係從關閉狀態切換成打開狀態,開始朝第三噴嘴43(後行噴嘴)供給第二清洗液(後行處理液)。如上文所說明般,第三閥VA3係從關閉狀態切換成打開狀態,直至藉由第三噴嘴43噴出第二清洗液為止之期間發生第四延遲時間DT4。When the fourth predetermined time T4 elapses after the fourth valve VA4 (pre-valve) sends an opening signal to the fourth valve VA4 (pre-valve) and the time t8 is reached, the control device 101 (control unit 102) sends an opening signal to the third valve VA3 (post-valve). As a result, the third valve VA3 switches from a closed state to an open state, and starts to supply the second cleaning liquid (post-treatment liquid) to the third nozzle 43 (post-nozzle). As described above, the fourth delay time DT4 occurs during the period from the third valve VA3 switching from a closed state to an open state until the second cleaning liquid is sprayed out by the third nozzle 43.

因此,拍攝裝置110係在從時刻t8經過第四延遲時間DT4成為時刻t9之時序檢測第二清洗液(後行處理液)的開始噴出。結果,控制裝置101(控制部102)係在從時刻t8經過第四延遲時間DT4成為時刻t9之時序對第四閥VA4發送關閉訊號,將第四閥VA4從打開狀態切換成關閉狀態。當第四閥VA4(先行閥)從打開狀態切換成關閉狀態時,停止朝第四噴嘴44供給第二藥液,從而停止從第四噴出口44a(先行噴嘴的噴出口)朝基板W供給第二藥液(先行處理液)。Therefore, the camera 110 detects the start of ejection of the second cleaning liquid (post-processing liquid) at the timing from the moment t8 to the moment t9 after the fourth delay time DT4. As a result, the control device 101 (control unit 102) sends a closing signal to the fourth valve VA4 at the timing from the moment t8 to the moment t9 after the fourth delay time DT4. The fourth valve VA4 is switched from the open state to the closed state. When the fourth valve VA4 (pre-valve) is switched from the open state to the closed state, the supply of the second liquid to the fourth nozzle 44 is stopped, thereby stopping the supply of the second liquid (pre-processing liquid) from the fourth nozzle outlet 44a (the nozzle outlet of the pre-nozzle) to the substrate W.

以上,參照圖1至圖12說明本發明的實施形態一。依據本實施形態,因應拍攝裝置110(檢測部)檢測到後行處理液的噴出開始之事態,控制部102係將先行閥從打開狀態切換成關閉狀態。因此,作業者無須設定用以使先行閥的關閉動作的時序延遲之延遲時間(第一延遲時間DT1至第四延遲時間DT4)。The first embodiment of the present invention is described above with reference to FIGS. 1 to 12. According to the present embodiment, in response to the camera 110 (detection unit) detecting the start of the ejection of the subsequent treatment liquid, the control unit 102 switches the pilot valve from the open state to the closed state. Therefore, the operator does not need to set the delay time (first delay time DT1 to fourth delay time DT4) for delaying the timing of the closing action of the pilot valve.

例如,延遲時間係需要在各個處理液的噴出壓力每次變動時進行變更。此外,延遲時間係需要在用以使各個閥開閉之空氣壓或者各個處理液的倒吸位置每次變動時進行變更。再者,延遲時間係需要在設置有基板處理裝置100的工廠的能源用度每次變動時進行變更。因此,在作業者設定延遲時間之構成中,作業者的負擔係變大。相對於此,依據本實施形態,由於作業者無須設定延遲時間,因此能減少作業者的負擔。For example, the delay time needs to be changed every time the ejection pressure of each processing liquid changes. In addition, the delay time needs to be changed every time the air pressure used to open and close each valve or the back suction position of each processing liquid changes. Furthermore, the delay time needs to be changed every time the energy cost of the factory equipped with the substrate processing device 100 changes. Therefore, in the structure in which the operator sets the delay time, the burden of the operator increases. In contrast, according to this embodiment, since the operator does not need to set the delay time, the burden of the operator can be reduced.

再者,從各個閥至各個噴出口為止之配管長度以及因為各個噴出口的高低差等所致使的每個處理室2(處理部1)的延遲時間的長度係不同。因此,需要針對每個處理室2(處理部1)設定延遲時間。依據本實施形態,由於作業者無須設定延遲時間,因此能減少作業者的負擔。Furthermore, the length of the pipe from each valve to each nozzle and the length of the delay time of each processing chamber 2 (processing part 1) due to the height difference of each nozzle are different. Therefore, it is necessary to set the delay time for each processing chamber 2 (processing part 1). According to this embodiment, since the operator does not need to set the delay time, the burden of the operator can be reduced.

此外,在已經開始朝後行噴嘴供給後行處理液之時序(已將後行閥從關閉狀態切換成打開狀態之時序)使先行噴嘴停止噴出先行處理液之構成中會有下述可能性:因為開始朝後行噴嘴供給後行處理液後直至後行處理液著落至基板W為止之期間的延遲時間,導致於基板W產生微粒。尤其,在於基板W的表面形成有細微的圖案之情形中,微粒的產生會對基板W的特性造成大幅的影響。微粒係例如為水漬。In addition, in the configuration where the leading nozzle stops ejecting the leading processing liquid at the timing when the trailing nozzle has started to supply the trailing processing liquid (the timing when the trailing valve has been switched from the closed state to the open state), there is the possibility that particles are generated on the substrate W due to the delay time from the start of supplying the trailing processing liquid to the trailing nozzle until the trailing processing liquid lands on the substrate W. In particular, when a fine pattern is formed on the surface of the substrate W, the generation of particles will have a significant impact on the characteristics of the substrate W. The particles are, for example, water stains.

詳細而言,會有下述可能性:因為開始朝後行噴嘴供給後行處理液後直至後行處理液著落至基板W為止之期間的延遲時間,於基板W的外周部發生覆蓋不良。所謂覆蓋不良係表示基板W的上表面未被處理液的液膜覆蓋而是露出。覆蓋不良係主要是因為處理液的表面張力所發生。當於基板W的外周部發生覆蓋不良且基板W的外周部乾燥時,會有於基板W的外周部發生水漬之可能性。Specifically, there is the possibility that poor coverage occurs at the periphery of the substrate W due to the delay time from the start of supplying the subsequent processing liquid to the subsequent nozzle until the subsequent processing liquid lands on the substrate W. Poor coverage means that the upper surface of the substrate W is not covered by the liquid film of the processing liquid but is exposed. Poor coverage occurs mainly due to the surface tension of the processing liquid. When poor coverage occurs at the periphery of the substrate W and the periphery of the substrate W is dry, water stains may occur at the periphery of the substrate W.

此外,在已經開始朝後行噴嘴供給後行處理液之時序(已經將後行閥從關閉狀態切換成打開狀態之時序)使先行噴嘴停止噴出先行處理液之構成中會有下述可能性:因為開始朝後行噴嘴供給後行處理液後直至後行處理液著落至基板W為止之期間的延遲時間,導致形成於基板W的表面的圖案崩塌。尤其,圖案的崩塌係容易發生於在基板W的表面形成有細微的圖案之情形。圖案的崩塌係對基板W的特性造成大幅的影響。In addition, in a configuration where the leading nozzle stops ejecting the leading processing liquid at the timing when the trailing processing liquid has started to be supplied to the trailing nozzle (the timing when the trailing valve has been switched from the closed state to the open state), there is a possibility that the pattern formed on the surface of the substrate W may collapse due to the delay time from the start of supplying the trailing processing liquid to the trailing nozzle until the trailing processing liquid lands on the substrate W. In particular, the pattern collapse is likely to occur when a fine pattern is formed on the surface of the substrate W. The pattern collapse has a significant impact on the characteristics of the substrate W.

詳細而言,如上文所說明般,當因為開始朝後行噴嘴供給後行處理液後直至後行處理液著落至基板W為止之期間的延遲時間導致於基板W的外周部發生覆蓋不良時,會有基板W的外周部乾燥之可能性。圖案的崩塌係因為基板W的表面乾燥而發生。Specifically, as described above, when poor coverage occurs on the periphery of the substrate W due to the delay time from the start of supplying the subsequent processing liquid to the subsequent nozzle until the subsequent processing liquid lands on the substrate W, the periphery of the substrate W may dry up. The collapse of the pattern occurs when the surface of the substrate W is dry.

相對於此,依據本實施形態,檢測開始從後行噴嘴噴出後行處理液。因此,與在已經開始朝後行噴嘴供給後行處理液之時序(已經將後行閥從關閉狀態切換成打開狀態之時序)使先行噴嘴停止噴出先行處理液之構成相比,能控制用以使先行噴嘴停止噴出先行處理液之時序,以減少從停止噴出先行處理液後直至後行處理液著落至基板W為止之期間的延遲時間。因此,能減少停止噴出先行處理液後直至後行處理液著落至基板W為止之期間的延遲時間,從而抑制水漬的發生以及圖案的崩塌。In contrast, according to the present embodiment, the start of ejecting the following treatment liquid from the following nozzle is detected. Therefore, compared with a configuration in which the leading nozzle stops ejecting the preceding treatment liquid at the timing when the following treatment liquid has already started to be supplied to the following nozzle (at the timing when the following valve has already been switched from a closed state to an open state), the timing for stopping the ejection of the preceding treatment liquid from the leading nozzle can be controlled to reduce the delay time from when the ejection of the preceding treatment liquid stops until the following treatment liquid lands on the substrate W. Therefore, the delay time from when the ejection of the preceding treatment liquid stops until the following treatment liquid lands on the substrate W can be reduced, thereby suppressing the occurrence of water stains and the collapse of the pattern.

此外,在本實施形態中,雖然拍攝裝置110係在基板保持部3保持基板W後開始拍攝並在執行基板處理後結束拍攝,然而拍攝裝置110的開始拍攝以及結束拍攝的時序係只要能檢測第一清洗液的開始噴出、第二清洗液的開始噴出以及第二藥液的開始噴出則無特別限定。In addition, in this embodiment, although the photographing device 110 starts photographing after the substrate holding portion 3 holds the substrate W and ends photographing after performing substrate processing, the timing of starting photographing and ending photographing of the photographing device 110 is not particularly limited as long as the start of spraying of the first cleaning liquid, the start of spraying of the second cleaning liquid, and the start of spraying of the second chemical solution can be detected.

[實施形態二] 接著,參照圖1至圖6、圖9至圖11以及圖13至圖15說明本發明的實施形態二。然而,說明與實施形態一不同的事項,針對與實施形態一相同的事項的說明則省略。實施形態二與實施形態一的差異點在於:將用以顯示各個處理液的開始噴出時序之資料發送至外部裝置GS。 [Implementation Form 2] Next, the implementation form 2 of the present invention is described with reference to Figures 1 to 6, Figures 9 to 11, and Figures 13 to 15. However, the description of matters different from the implementation form 1 is omitted, and the description of matters the same as the implementation form 1 is omitted. The difference between the implementation form 2 and the implementation form 1 is that the data used to display the start timing of spraying each treatment liquid is sent to the external device GS.

圖13係顯示本實施形態的基板處理裝置100的構成的一部分之方塊圖。此外,為了容易理解,在圖13中僅顯示基板處理裝置100的構成要素中的控制裝置101以及通訊部112,針對其他的構成要素則省略。Fig. 13 is a block diagram showing a part of the structure of the substrate processing apparatus 100 of the present embodiment. In addition, for easy understanding, only the control device 101 and the communication unit 112 of the components of the substrate processing apparatus 100 are shown in Fig. 13, and other components are omitted.

如圖13所示,本實施形態的基板處理裝置100係進一步地具備通訊部112。通訊部112係在與外部裝置GS之間進行通訊。例如,通訊部112係以有線或者無線的方式連接於網路NW,並與連接於網路NW的外部裝置GS進行通訊。網路NW係例如包含網際網路、LAN(Local Area Network;區域網路)以及公眾電話網路。在此種情形中,通訊部112係例如為網路介面控制器(network interface controller)。As shown in FIG. 13 , the substrate processing apparatus 100 of this embodiment further includes a communication unit 112. The communication unit 112 communicates with the external device GS. For example, the communication unit 112 is connected to the network NW in a wired or wireless manner and communicates with the external device GS connected to the network NW. The network NW includes, for example, the Internet, a LAN (Local Area Network), and a public telephone network. In this case, the communication unit 112 is, for example, a network interface controller.

在本實施形態中,通訊部112係將用以顯示各個處理液(第一藥液、第二藥液、第一清洗液以及第二清洗液)的開始噴出時序之資料發送至外部裝置GS。更具體而言,通訊部112係將第一藥液的開始噴出時序、第一清洗液的開始噴出時序、第二清洗液的開始噴出時序(第一次)、第二藥液的開始噴出時序以及第二清洗液的開始噴出時序(第二次)發送至外部裝置GS。In this embodiment, the communication unit 112 transmits data for displaying the start ejection timing of each treatment liquid (the first chemical liquid, the second chemical liquid, the first cleaning liquid, and the second cleaning liquid) to the external device GS. More specifically, the communication unit 112 transmits the start ejection timing of the first chemical liquid, the start ejection timing of the first cleaning liquid, the start ejection timing of the second cleaning liquid (first time), the start ejection timing of the second chemical liquid, and the start ejection timing of the second cleaning liquid (second time) to the external device GS.

如參照圖4所說明般,於拍攝裝置110的拍攝範圍SH進一步地包含有能夠拍攝位於處理位置的第一噴嘴41的前端(第一噴出口41a)以及從第一噴嘴41的前端(第一噴出口41a)噴出的第一藥液之範圍。在本實施形態中,與第二藥液、第一清洗液以及第二清洗液同樣地,拍攝裝置110係進一步地檢測第一藥液的開始噴出。此外,與第二藥液、第一清洗液以及第二清洗液同樣地,控制部102係進一步地取得第一噴嘴41的第一藥液的開始噴出時序。As described with reference to FIG. 4 , the shooting range SH of the shooting device 110 further includes a range capable of shooting the front end (first nozzle 41a) of the first nozzle 41 located at the processing position and the first liquid ejected from the front end (first nozzle 41a) of the first nozzle 41. In this embodiment, the shooting device 110 further detects the start of ejection of the first liquid, similarly to the second liquid, the first cleaning liquid, and the second cleaning liquid. In addition, similarly to the second liquid, the first cleaning liquid, and the second cleaning liquid, the control unit 102 further obtains the start timing of ejection of the first liquid from the first nozzle 41.

更具體而言,控制部102係在第一噴嘴41位於處理位置時對第一噴嘴41設定圖像處理區域KA。具體而言,圖像處理區域KA係包含第四圖像處理區域,第四圖像處理區域係從第一噴嘴41的前端(第一噴出口41a)朝第一藥液的噴出方向延伸。控制部102係基於第四圖像處理區域的圖像來檢測第一藥液的開始噴出時序。More specifically, the control unit 102 sets the image processing area KA for the first nozzle 41 when the first nozzle 41 is located at the processing position. Specifically, the image processing area KA includes a fourth image processing area, and the fourth image processing area extends from the front end (first ejection outlet 41a) of the first nozzle 41 toward the ejection direction of the first chemical solution. The control unit 102 detects the start timing of ejection of the first chemical solution based on the image of the fourth image processing area.

外部裝置GS係例如為主機電腦或者伺服器。外部裝置GS係收集並解析各個處理液的開始噴出時序。外部裝置GS係例如基於所收集的各個處理液的開始噴出時序將用以調整朝基板W供給各個處理液的時間之命令發送至基板處理裝置100。此外,外部裝置GS亦可在與複數個基板處理裝置100之間進行通訊。在此種情形中,外部裝置GS係針對每個基板處理裝置100收集各個處理液的開始噴出時序。The external device GS is, for example, a host computer or a server. The external device GS collects and analyzes the start ejection timing of each processing liquid. The external device GS, for example, sends a command for adjusting the time of supplying each processing liquid to the substrate W based on the collected start ejection timing of each processing liquid to the substrate processing device 100. In addition, the external device GS can also communicate with a plurality of substrate processing devices 100. In this case, the external device GS collects the start ejection timing of each processing liquid for each substrate processing device 100.

接著,參照圖1至圖6、圖9至圖11、圖13以及圖14說明本實施形態的基板處理方法。圖14係顯示本實施形態的基板處理方法之流程圖。圖14所示的基板處理方法係藉由圖1至圖6以及圖13所說明的基板處理裝置100來執行。因此,圖14係顯示本實施形態的基板處理裝置100的動作。Next, the substrate processing method of this embodiment is described with reference to FIGS. 1 to 6, 9 to 11, 13 and 14. FIG. 14 is a flow chart showing the substrate processing method of this embodiment. The substrate processing method shown in FIG. 14 is performed by the substrate processing apparatus 100 described in FIGS. 1 to 6 and 13. Therefore, FIG. 14 shows the operation of the substrate processing apparatus 100 of this embodiment.

相較於參照圖7所說明的基板處理方法(基板處理裝置100的動作),圖14所示的基板處理方法(基板處理裝置100的動作)係進一步地包含步驟S7。Compared to the substrate processing method (operation of the substrate processing apparatus 100) described with reference to FIG. 7, the substrate processing method (operation of the substrate processing apparatus 100) shown in FIG. 14 further includes step S7.

具體而言,當中心機器人CR將基板W搬出至處理室2的外部時(步驟S6),控制裝置101(控制部102)係控制通訊部112將用以顯示各個處理液(第一藥液、第二藥液、第一清洗液以及第二清洗液)的開始噴出時序之資料發送至外部裝置GS(步驟S7)。結果,結束圖14所示的基板處理方法(基板處理裝置100的動作)。Specifically, when the central robot CR carries the substrate W out of the processing chamber 2 (step S6), the control device 101 (control unit 102) controls the communication unit 112 to send data for displaying the start timing of spraying of each processing liquid (first chemical liquid, second chemical liquid, first cleaning liquid, and second cleaning liquid) to the external device GS (step S7). As a result, the substrate processing method (operation of the substrate processing device 100) shown in FIG. 14 is terminated.

接著,參照圖1至圖6、圖9至圖11以及圖13至圖15說明本實施形態的基板處理方法(基板處理裝置100的動作)。圖15係顯示基板處理(圖14所示的步驟S4)的流程之流程圖。詳細而言,圖15係顯示基板處理的流程的一部分。Next, the substrate processing method (operation of the substrate processing apparatus 100) of this embodiment will be described with reference to Fig. 1 to Fig. 6, Fig. 9 to Fig. 11, and Fig. 13 to Fig. 15. Fig. 15 is a flow chart showing the process of substrate processing (step S4 shown in Fig. 14). Specifically, Fig. 15 shows a part of the process of substrate processing.

如圖15所示,當開始基板處理時,與圖8的步驟S11同樣地,第一噴嘴移動機構5係使第一噴嘴41從第一退避區域移動至處理位置(步驟S51)。As shown in FIG. 15 , when substrate processing starts, similarly to step S11 in FIG. 8 , the first nozzle moving mechanism 5 moves the first nozzle 41 from the first retreat area to the processing position (step S51 ).

當第一噴嘴41移動至處理位置時,與圖8的步驟S12同樣地,控制裝置101(控制部102)係控制第一閥VA1(先行閥)開始朝第一噴嘴41(先行噴嘴)供給第一藥液(先行處理液)(步驟S52)。When the first nozzle 41 moves to the treatment position, similarly to step S12 of FIG. 8 , the control device 101 (control unit 102) controls the first valve VA1 (pilot valve) to start supplying the first chemical solution (pilot treatment solution) to the first nozzle 41 (pilot nozzle) (step S52).

控制裝置101(控制部102)係在開始供給第一藥液後判定是否檢測到開始從第一噴出口41a(先行噴嘴的噴出口)噴出第一藥液(先行處理液)(步驟S53)。具體而言,控制裝置101(控制部102)係基於從拍攝裝置110輸入的拍攝圖像SG來判定是否檢測到開始從第一噴出口41a噴出第一藥液。詳細而言,控制裝置101(控制部102)係從拍攝圖像SG的各個幀抽取第四圖像處理區域。接著,控制裝置101(控制部102)係對各個第四圖像處理區域進行圖像處理,並判定是否檢測到開始從第一噴出口41a噴出第一藥液。After the first chemical liquid is supplied, the control device 101 (control unit 102) determines whether the start of ejection of the first chemical liquid (preliminary treatment liquid) from the first ejection port 41a (the ejection port of the preliminary ejection nozzle) is detected (step S53). Specifically, the control device 101 (control unit 102) determines whether the start of ejection of the first chemical liquid from the first ejection port 41a is detected based on the captured image SG input from the imaging device 110. In detail, the control device 101 (control unit 102) extracts the fourth image processing area from each frame of the captured image SG. Next, the control device 101 (control section 102) performs image processing on each fourth image processing area, and determines whether the start of ejection of the first chemical solution from the first ejection port 41a is detected.

控制裝置101(控制部102)係在判定成尚未檢測到開始從第一噴出口41a噴出第一藥液之情形中(步驟S53的「否」)重複步驟S53的處理。控制裝置101(控制部102)係在判定成檢測到開始從第一噴出口41a(先行噴嘴的噴出口)噴出第一藥液(先行處理液)之情形中(步驟S53中的「是」),與圖8的步驟S13同樣地,判定開始供給第一藥液後是否已經經過第一既定時間T1(步驟S54)。由於後續的各個步驟(步驟S55至步驟S57)係與圖8的步驟S14至步驟S16相同,因此省略這些步驟的說明。When the control device 101 (control unit 102) determines that the start of ejection of the first chemical liquid from the first ejection port 41a has not been detected ("No" in step S53), the control device 101 (control unit 102) repeats the processing of step S53. When the control device 101 (control unit 102) determines that the start of ejection of the first chemical liquid (preliminary treatment liquid) from the first ejection port 41a (the ejection port of the preliminary nozzle) has been detected ("Yes" in step S53), similarly to step S13 of FIG. 8, it determines whether the first predetermined time T1 has passed after the start of supply of the first chemical liquid (step S54). Since the subsequent steps (steps S55 to S57) are the same as steps S14 to S16 of FIG. 8, the description of these steps is omitted.

以上,已經參照圖1至圖6、圖9至圖11以及圖13至圖15說明本發明的實施形態二。依據本實施形態,與用以使外部裝置GS解析已經對各個閥(第一閥VA1至第四閥VA4)發送打開訊號之時序的構成相比,能夠更高精度地調整各個處理液的供給時間。The second embodiment of the present invention has been described above with reference to Figures 1 to 6, Figures 9 to 11, and Figures 13 to 15. According to this embodiment, the supply timing of each treatment liquid can be adjusted with higher accuracy compared to a configuration in which the external device GS analyzes the timing of sending an opening signal to each valve (first valve VA1 to fourth valve VA4).

詳細而言,如上文所說明般,開始從各個噴出口(第一噴出口41a至第四噴出口44a)噴出各個處理液(第一藥液、第一清洗液、第二清洗液以及第二藥液)之時序係比已經對各個閥(第一閥VA1至第四閥VA4)發送打開訊號之時序還延遲。這些延遲時間係因為各個處理液的噴出壓力的變動、用以使各個閥開閉之空氣壓力的變動、各個處理液的倒吸位置的變動、從各個閥至各個噴出口為止之配管長度、以及各個噴出口的高低差等而發生。因此,延遲時間並非是固定不變的。因此,在用以解析已經對各個閥(第一閥VA1至第四閥VA4)發送打開訊號之時序的構成中,為了調整朝基板W供給各個處理液的時間,需要考慮各種因素。因此,並不容易高精度地調整朝基板W供給各個處理液的時間。相對於此,依據本實施形態,由於能解析各個處理液的開始噴出時序,因此能高精度地調整朝基板W供給各個處理液的時間。In detail, as described above, the timing of starting to spray each treatment liquid (first chemical liquid, first cleaning liquid, second cleaning liquid, and second chemical liquid) from each nozzle (first nozzle 41a to fourth nozzle 44a) is delayed compared to the timing of sending the opening signal to each valve (first valve VA1 to fourth valve VA4). These delay times are caused by the change of the spray pressure of each treatment liquid, the change of the air pressure used to open and close each valve, the change of the back suction position of each treatment liquid, the length of the piping from each valve to each nozzle, and the height difference of each nozzle. Therefore, the delay time is not fixed. Therefore, in order to adjust the timing of supplying each processing liquid to the substrate W in the structure for analyzing the timing of sending the opening signal to each valve (the first valve VA1 to the fourth valve VA4), various factors need to be considered. Therefore, it is not easy to adjust the timing of supplying each processing liquid to the substrate W with high precision. In contrast, according to this embodiment, since the start timing of spraying each processing liquid can be analyzed, the timing of supplying each processing liquid to the substrate W can be adjusted with high precision.

此外,在本實施形態中,當中心機器人CR將基板W搬出至處理室2的外部時(步驟S6),控制裝置101(控制部102)係控制通訊部112將用以顯示各個處理液的開始噴出時序之資料發送至外部裝置GS,然而發送用以顯示各個處理液的開始噴出時序之資料的時序並未特別限定。例如,控制裝置101(控制部102)亦可在每次執行預定次數的基板處理時將用以顯示各個處理液的開始噴出時序之資料發送至外部裝置GS。In addition, in the present embodiment, when the central robot CR carries the substrate W out of the processing chamber 2 (step S6), the control device 101 (control unit 102) controls the communication unit 112 to send data for displaying the start timing of spraying of each processing liquid to the external device GS, but the timing for sending the data for displaying the start timing of spraying of each processing liquid is not particularly limited. For example, the control device 101 (control unit 102) may also send data for displaying the start timing of spraying of each processing liquid to the external device GS each time a predetermined number of substrate processings are performed.

此外,雖然在本實施形態中檢測到各個處理液的開始噴出時序,然而控制部102亦可取得各個處理液的停止供給時序以取代各個處理液的開始噴出時序,或者除了取得各個處理液的開始噴出時序之外再取得各個處理液的停止供給時序,並將這些時序的資料發送至外部裝置GS。能夠解析各個處理液的停止供給時序以取代各個處理液的噴出開始時序,或者除了解析各個處理液的開始噴出時序之外再解析各個處理液的停止供給時序,藉此能夠更高精度地調整朝基板W供給各個處理液的時間。In addition, although the start timing of spraying of each processing liquid is detected in the present embodiment, the control unit 102 may also obtain the stop timing of supplying each processing liquid instead of the start timing of spraying of each processing liquid, or obtain the stop timing of supplying each processing liquid in addition to the start timing of spraying of each processing liquid, and send the data of these timings to the external device GS. By analyzing the stop timing of supplying each processing liquid instead of the start timing of spraying of each processing liquid, or analyzing the stop timing of supplying each processing liquid in addition to the start timing of spraying of each processing liquid, the time of supplying each processing liquid to the substrate W can be adjusted with higher accuracy.

具體而言,控制部102亦可取得已經對第一閥VA1發送關閉訊號之時序作為第一藥液的停止供給時序(圖15的步驟S57)。同樣地,控制部102亦可取得已經對第二閥VA2發送關閉訊號之時序(圖9的步驟S25)、已經對第三閥VA3發送關閉訊號之時序(圖10的步驟S35)、以及已經對第四閥VA4發送關閉訊號之時序(圖11的步驟S42)作為第一清洗液、第二清洗液(第一次)以及第二藥液的停止供給時序。Specifically, the control unit 102 can also obtain the timing of sending a closing signal to the first valve VA1 as the timing of stopping the supply of the first chemical solution (step S57 of FIG. 15). Similarly, the control unit 102 can also obtain the timing of sending a closing signal to the second valve VA2 (step S25 of FIG. 9), the timing of sending a closing signal to the third valve VA3 (step S35 of FIG. 10), and the timing of sending a closing signal to the fourth valve VA4 (step S42 of FIG. 11) as the timing of stopping the supply of the first cleaning solution, the second cleaning solution (first time), and the second chemical solution.

[實施形態三] 接著,參照圖1至圖8、圖10以及圖16至圖20說明本發明的實施形態三。然而,說明與實施形態一以及實施形態二不同的事項,針對與實施形態一以及實施形態二相同的事項的說明則省略。實施形態三與實施形態一以及實施形態二的差異點在於:使開始噴出第二清洗液(後行處理液)後的第一清洗液(先行處理液)的停止噴出時序以及開始噴出第二清洗液(後行處理液)後的第二藥液(先行處理液)的停止噴出時序進一步地延遲。 [Implementation Form Three] Next, the implementation form three of the present invention is described with reference to Figures 1 to 8, Figure 10, and Figures 16 to 20. However, the description of matters different from the implementation forms 1 and 2 is omitted for matters the same as the implementation forms 1 and 2. The difference between the implementation form 3 and the implementation forms 1 and 2 is that the timing of stopping the spraying of the first cleaning liquid (pre-treatment liquid) after the start of spraying the second cleaning liquid (post-treatment liquid) and the timing of stopping the spraying of the second chemical solution (pre-treatment liquid) after the start of spraying the second cleaning liquid (post-treatment liquid) are further delayed.

圖16係顯示本實施形態的基板處理裝置100的構成的一部分之方塊圖。此外,為了容易理解,在圖16中僅顯示基板處理裝置100的構成要素中的控制裝置101、輸入部113以及顯示部114,其他的構成要素則省略。如圖16所示,本實施形態的基板處理裝置100係進一步地具備輸入部113以及顯示部114。FIG16 is a block diagram showing a part of the structure of the substrate processing apparatus 100 of this embodiment. In addition, for easy understanding, FIG16 only shows the control device 101, the input unit 113 and the display unit 114 of the components of the substrate processing apparatus 100, and the other components are omitted. As shown in FIG16, the substrate processing apparatus 100 of this embodiment further has an input unit 113 and a display unit 114.

輸入部113為供作業者操作之使用者介面裝置。輸入部113係將已與作業者的操作相應的指示(控制訊號)輸入至控制部102。此外,輸入部113係將已與作業者的操作相應的資料輸入至控制部102。典型而言,輸入部113係具有鍵盤以及滑鼠。此外,輸入部113亦可具有觸控感測器。觸控感測器係重疊至顯示部114的顯示面,生成用以顯示作業者對於顯示面的觸控操作之訊號。作業者係能藉由觸控操作對控制部102輸入各種指示以及各種資料。The input unit 113 is a user interface device for the operator to operate. The input unit 113 inputs instructions (control signals) corresponding to the operator's operation to the control unit 102. In addition, the input unit 113 inputs data corresponding to the operator's operation to the control unit 102. Typically, the input unit 113 has a keyboard and a mouse. In addition, the input unit 113 may also have a touch sensor. The touch sensor is superimposed on the display surface of the display unit 114, and generates a signal for displaying the operator's touch operation on the display surface. The operator can input various instructions and various data to the control unit 102 through touch operation.

在本實施形態中,作業者係能操作輸入部113於顯示部114所顯示的畫面的輸入欄位輸入(登錄或者設定)各種資訊。具體而言,作業者係能操作輸入部113輸入追加延遲時間ADT的值。In this embodiment, the operator can operate the input unit 113 to input (register or set) various information in the input fields of the screen displayed by the display unit 114. Specifically, the operator can operate the input unit 113 to input the value of the additional delay time ADT.

如參照圖2所說明般,第三噴嘴43係配置於液體接住部9的外側,從液體接住部9的外側朝向旋轉中的基板W的中心噴出第二清洗液。因此,從第三噴嘴43開始噴出第二清洗液後直至第二清洗液著落至基板W為止之期間發生延遲時間。以下,會有將此種延遲時間稱為「著落延遲時間」之情形。追加延遲時間ADT係能因應著落延遲時間來設定。As described with reference to FIG. 2 , the third nozzle 43 is disposed on the outer side of the liquid receiving portion 9, and sprays the second cleaning liquid from the outer side of the liquid receiving portion 9 toward the center of the rotating substrate W. Therefore, a delay time occurs from the time when the third nozzle 43 starts spraying the second cleaning liquid until the second cleaning liquid lands on the substrate W. Hereinafter, this delay time may be referred to as a "landing delay time". The additional delay time ADT can be set according to the landing delay time.

圖17係顯示顯示部所顯示的輸入畫面GA之圖。輸入畫面GA為用以設定追加延遲時間ADT之畫面。如圖17所示,輸入畫面GA係包含用以輸入追加延遲時間ADT的值之輸入欄位NR。Fig. 17 is a diagram showing an input screen GA displayed on the display unit. The input screen GA is a screen for setting the additional delay time ADT. As shown in Fig. 17, the input screen GA includes an input field NR for inputting a value of the additional delay time ADT.

作業者係能在顯示部114顯示有輸入畫面GA時操作入部113對輸入欄位NR輸入追加延遲時間ADT的值。作業者亦可例如考慮第二清洗液的噴出流量以及從第三噴出口43a至基板W為止的距離等來決定追加延遲時間ADT的值。The operator can input the value of the additional delay time ADT to the input field NR by operating the input unit 113 when the input screen GA is displayed on the display unit 114. The operator can also determine the value of the additional delay time ADT by considering, for example, the ejection flow rate of the second cleaning liquid and the distance from the third ejection port 43a to the substrate W.

接著,參照圖1至圖8、圖10以及圖16至圖19說明本實施形態的基板處理方法(基板處理裝置100的動作)。圖18以及圖19係顯示基板處理(圖7所示的步驟S4)的流程之流程圖。詳細而言,圖18係顯示基板處理的流程的一部分。圖19係顯示基板處理的流程的其他部分。Next, the substrate processing method (operation of the substrate processing apparatus 100) of this embodiment will be described with reference to FIGS. 1 to 8, 10, and 16 to 19. FIGS. 18 and 19 are flow charts showing the process of substrate processing (step S4 shown in FIG. 7). Specifically, FIG. 18 shows a part of the process of substrate processing. FIG. 19 shows the other part of the process of substrate processing.

如圖18所示,控制裝置101(控制部102)係在判定成檢測到開始從第三噴出口43a(後行噴嘴的噴出口)噴出第二清洗液(後行處理液)之情形中(步驟S24中的「是」),控制第二閥VA2(先行閥)執行關閉動作控制處理(步驟S25),該關閉動作控制(步驟S25)係停止朝第二噴嘴42(先行噴嘴)供給第一清洗液(先行處理液)。As shown in Figure 18, the control device 101 (control unit 102) controls the second valve VA2 (pilot valve) to perform closing action control processing (step S25) when it is determined that the second cleaning liquid (pilot treatment liquid) starts to be sprayed from the third nozzle 43a (the nozzle of the subsequent nozzle) ("Yes" in step S24). The closing action control (step S25) stops supplying the first cleaning liquid (pilot treatment liquid) to the second nozzle 42 (pilot nozzle).

詳細而言,控制裝置101(控制部102)係在檢測到開始從第三噴出口43a(後行噴嘴的噴出口)噴出第二清洗液(後行處理液)之情形中(步驟S24中的「是」),判定是否已經經過參照圖16以及圖17所說明的追加延遲時間ADT(步驟S251)。具體而言,控制部102係因應檢測到第二清洗液的開始噴出之事態開始計時。控制部102係判定計時結果是否已經到達追加延遲時間ADT。第二清洗液係在經過追加延遲時間ADT之期間著落至基板W。In detail, when the control device 101 (control unit 102) detects that the second cleaning liquid (subsequent processing liquid) starts to be ejected from the third ejection port 43a (the ejection port of the subsequent ejection nozzle) ("Yes" in step S24), it determines whether the additional delay time ADT described with reference to FIG. 16 and FIG. 17 has passed (step S251). Specifically, the control unit 102 starts timing in response to the detection of the start of ejection of the second cleaning liquid. The control unit 102 determines whether the timing result has reached the additional delay time ADT. The second cleaning liquid lands on the substrate W during the additional delay time ADT.

控制裝置101(控制部102)係在判定成尚未經過追加延遲時間ADT之情形中(步驟S251中的「否」)重複步驟S251的處理。控制裝置101(控制部102)係在判定成已經經過追加延遲時間ADT之情形中(步驟S251中的「是」),控制第二閥VA2(先行閥)執行關閉動作控制處理(步驟S252),該關閉動作控制處理(步驟S252)係停止朝第二噴嘴42(先行噴嘴)供給第一清洗液(先行處理液)。When the control device 101 (control unit 102) determines that the additional delay time ADT has not passed ("No" in step S251), the control device 101 (control unit 102) repeats the process of step S251. When the control device 101 (control unit 102) determines that the additional delay time ADT has passed ("Yes" in step S251), the control device 101 (control unit 102) controls the second valve VA2 (pilot valve) to perform a closing motion control process (step S252), and the closing motion control process (step S252) stops supplying the first cleaning liquid (pilot liquid) to the second nozzle 42 (pilot nozzle).

此外,如圖19所示,控制裝置101(控制部102)係在判定成檢測到開始從第三噴出口43a(後行噴嘴的噴出口)噴出第二清洗液(後行處理液)之情形中(步驟S41中的「是」),控制第四閥VA4(先行閥)執行關閉動作控制處理(步驟S42),該關閉動作控制處理(步驟S42)係停止朝第四噴嘴44(先行噴嘴)供給第二藥液(先行處理液)。In addition, as shown in Figure 19, the control device 101 (control unit 102) controls the fourth valve VA4 (pilot valve) to perform a closing action control process (step S42) when it is determined that the second cleaning liquid (pilot treatment liquid) starts to be sprayed from the third nozzle 43a (the nozzle of the subsequent nozzle) ("Yes" in step S41). The closing action control process (step S42) stops the supply of the second liquid (pilot treatment liquid) to the fourth nozzle 44 (pilot nozzle).

詳細而言,控制裝置101(控制部102)係在判定成檢測到開始從第三噴出口43a(後行噴嘴的噴出口)噴出第二清洗液(後行處理液)之情形中(步驟S41中的「是」),與圖18所示的步驟S251同樣地,判定是否已經經過追加延遲時間ADT(步驟S421)。接著,控制裝置101(控制部102)係在判定成檢測到已經經過追加延遲時間ADT之情形中(步驟S421中的「是」),控制第四閥VA4(先行閥)執行關閉動作控制處理(步驟S422),該關閉動作控制處理(步驟S422)係停止朝第四噴嘴44(先行噴嘴)供給第二藥液(先行處理液)。Specifically, when the control device 101 (control unit 102) determines that the second cleaning liquid (subsequent treatment liquid) starts to be ejected from the third nozzle 43a (the nozzle of the subsequent nozzle) ("Yes" in step S41), it determines whether the additional delay time ADT has passed (step S421), similarly to step S251 shown in FIG. 18 . Next, when the control device 101 (control unit 102) determines that the additional delay time ADT has passed ("Yes" in step S421), it controls the fourth valve VA4 (pilot valve) to execute the closing action control processing (step S422), and the closing action control processing (step S422) stops supplying the second liquid (pilot treatment liquid) to the fourth nozzle 44 (pilot nozzle).

接著,參照圖1至圖8、圖10以及圖16至圖20說明本實施形態的基板處理裝置100。圖20係顯示第一閥VA1至第四閥VA4的開閉動作以及拍攝裝置110的檢測動作之時序圖。此外,在圖20中橫軸係顯示時刻t、t11至t21。Next, the substrate processing apparatus 100 of the present embodiment will be described with reference to Fig. 1 to Fig. 8, Fig. 10, and Fig. 16 to Fig. 20. Fig. 20 is a timing chart showing the opening and closing actions of the first valve VA1 to the fourth valve VA4 and the detection action of the camera 110. In addition, the horizontal axis in Fig. 20 shows the time t, t11 to t21.

如圖20所示,第二閥VA2係在檢測到第二清洗液的開始噴出之時序(時刻t15)不遷移至關閉狀態而是維持打開狀態。在本實施形態中,在從檢測到第二清洗液的開始噴出之時序(時刻t15)起進一步地經過追加延遲時間ADT之時序(時刻t16),將第二閥VA2從打開狀態切換成關閉狀態。在檢測到第二清洗液的開始噴出之時序(時刻t20)起進一步地經過追加延遲時間ADT之時序(時刻t21),第四閥VA4亦同樣地從打開狀態切換成關閉狀態。As shown in FIG. 20 , the second valve VA2 does not move to the closed state but maintains the open state at the timing (time t15) when the start of the second cleaning liquid spraying is detected. In the present embodiment, the second valve VA2 is switched from the open state to the closed state at the timing (time t16) when the additional delay time ADT has passed since the start of the second cleaning liquid spraying is detected (time t15). The fourth valve VA4 is also switched from the open state to the closed state at the timing (time t21) when the additional delay time ADT has passed since the start of the second cleaning liquid spraying is detected (time t20).

以上,參照圖1至圖8、圖10以及圖16至圖20說明本發明的實施形態三。依據本實施形態,在開始噴出第二清洗液後,更難以發生因為著落延遲時間導致的覆蓋不良。The third embodiment of the present invention is described above with reference to Figures 1 to 8, 10, and 16 to 20. According to this embodiment, after the second cleaning liquid starts to be sprayed, poor coverage due to delayed landing time is less likely to occur.

[實施形態四] 接著,參照圖1至圖7、圖9至圖11、圖21以及圖22說明本發明的實施形態四。然而,說明與實施形態一至實施形態三不同的事項,針對與實施形態一至實施形態三相同的事項的說明則省略。實施形態四與實施形態一至實施形態三的差異點在於:使第一藥液的開始供給時序延遲。 [Implementation Form 4] Next, the implementation form 4 of the present invention is described with reference to Figures 1 to 7, Figures 9 to 11, Figure 21, and Figure 22. However, the description of matters different from the implementation forms 1 to 3 is omitted, and the description of matters the same as the implementation forms 1 to 3 is omitted. The difference between the implementation form 4 and the implementation forms 1 to 3 is that the start timing of the supply of the first liquid medicine is delayed.

圖21係顯示本實施形態的基板處理方法所包含的基板處理(圖7所示的步驟S4)的流程之流程圖。詳細而言,圖21係顯示基板處理的流程的一部分。如圖21所示,當開始基板處理時,與圖8的步驟S11同樣地,第一噴嘴移動機構5係使第一噴嘴41從第一退避區域移動至處理位置(步驟S71)。FIG21 is a flow chart showing the process of substrate processing (step S4 shown in FIG7 ) included in the substrate processing method of the present embodiment. Specifically, FIG21 shows a part of the process of substrate processing. As shown in FIG21 , when the substrate processing starts, similarly to step S11 of FIG8 , the first nozzle moving mechanism 5 moves the first nozzle 41 from the first retreat area to the processing position (step S71).

當第一噴嘴41移動至處理位置時,控制裝置101(控制部102)係判定是否已經經過開始延遲時間SDT(步驟S72)。具體而言,控制部102係因應第一噴嘴41移動至處理位置之事態開始計時。開始延遲時間SDT係被記憶於記憶部103。控制部102係判定計時結果是否已經到達開始延遲時間SDT。When the first nozzle 41 moves to the processing position, the control device 101 (control unit 102) determines whether the start delay time SDT has passed (step S72). Specifically, the control unit 102 starts timing in response to the first nozzle 41 moving to the processing position. The start delay time SDT is stored in the storage unit 103. The control unit 102 determines whether the timing result has reached the start delay time SDT.

控制裝置101(控制部102)係在判定成尚未經過開始延遲時間SDT之情形中(步驟S72中的「否」)重複步驟S72的處理。控制裝置101(控制部102)係在判定成已經經過開始延遲時間SDT之情形中(步驟S72中的「是」),與圖8的步驟S12同樣地,控制第一閥VA1(先行閥)開始朝第一噴嘴41(先行噴嘴)供給第一藥液(先行處理液)(步驟S73)。由於後續的動作(步驟S74至步驟S77)係與圖8的步驟S13至步驟S16相同,因此省略這些步驟的說明。When the control device 101 (control unit 102) determines that the start delay time SDT has not passed ("No" in step S72), the control device 101 (control unit 102) repeats the processing of step S72. When the control device 101 (control unit 102) determines that the start delay time SDT has passed ("Yes" in step S72), similarly to step S12 in FIG. 8, the control device 101 (control unit 102) controls the first valve VA1 (pilot valve) to start supplying the first chemical solution (pilot treatment solution) to the first nozzle 41 (pilot nozzle) (step S73). Since the subsequent actions (steps S74 to S77) are the same as steps S13 to S16 in FIG. 8, the description of these steps is omitted.

接著,參照圖1至圖7、圖9至圖11、圖21以及圖22說明本實施形態的基板處理裝置100。圖22係顯示第一閥VA1以及第二閥VA2的開閉動作以及拍攝裝置110的檢測動作之時序圖。此外,在圖22中橫軸係顯示時刻t、t21至t24。Next, the substrate processing apparatus 100 of this embodiment will be described with reference to Fig. 1 to Fig. 7, Fig. 9 to Fig. 11, Fig. 21 and Fig. 22. Fig. 22 is a timing chart showing the opening and closing actions of the first valve VA1 and the second valve VA2 and the detection action of the camera 110. In addition, the horizontal axis in Fig. 22 shows the time t, t21 to t24.

如圖22所示,控制裝置101(控制部102)係在第一噴嘴41移動至處理位置之時序(時刻t21)起進一步地經過開始延遲時間SDT之時序(時刻t22),朝第一閥VA發送打開訊號。結果,第一閥VA1係成為打開狀態,開始朝第一噴嘴41供給第一藥液,第一藥液係從第一噴出口41a被供給至基板W。As shown in FIG22, the control device 101 (control unit 102) sends an opening signal to the first valve VA at the timing (time t21) when the first nozzle 41 moves to the processing position and further at the timing (time t22) when the start delay time SDT passes. As a result, the first valve VA1 becomes open, and the first chemical solution starts to be supplied to the first nozzle 41, and the first chemical solution is supplied to the substrate W from the first nozzle outlet 41a.

在此,說明開始延遲時間SDT。開始延遲時間SDT係基於第一延遲時間DT1而決定。例如,控制部102亦可在執行第一次的基板處理時取得第一延遲時間DT1,將第一延遲時間DT1的值設定成開始延遲時間SDT的值。或者,控制部102亦可在每次執行基板處理時取得第一延遲時間DT1,並在實行下一個基板處理之前更新開始延遲時間SDT。Here, the start delay time SDT is explained. The start delay time SDT is determined based on the first delay time DT1. For example, the control unit 102 may also obtain the first delay time DT1 when performing the first substrate processing, and set the value of the first delay time DT1 to the value of the start delay time SDT. Alternatively, the control unit 102 may also obtain the first delay time DT1 each time the substrate processing is performed, and update the start delay time SDT before performing the next substrate processing.

以上,已參照圖1至圖7、圖9、圖10、圖21至圖22說明了本發明的實施形態四。依據本實施形態,能抑制因為第一延遲時間DT1導致朝基板W供給第一藥液的時間增加。因此,能抑制因為朝基板W供給第一藥液(先行處理液)的時間增加導致發生不良。The fourth embodiment of the present invention has been described above with reference to FIGS. 1 to 7, 9, 10, and 21 to 22. According to this embodiment, it is possible to suppress the increase in the time for supplying the first chemical solution to the substrate W due to the first delay time DT1. Therefore, it is possible to suppress the occurrence of defects due to the increase in the time for supplying the first chemical solution (preliminary treatment solution) to the substrate W.

例如,在第一藥液所為的基板處理為用以將基板W的上表面予以平坦之蝕刻處理之情形中,當朝基板W供給第一藥液的時間變得比第一既定時間T1的長度還長時,會有基板W的厚度變得比目標厚度還薄的疑慮。因此,會有使用基板W所製造的器件的特性無法成為期望的特性的疑慮。For example, when the substrate treatment using the first chemical solution is an etching treatment for flattening the upper surface of the substrate W, if the time for supplying the first chemical solution to the substrate W becomes longer than the first predetermined time T1, the thickness of the substrate W may become thinner than the target thickness. Therefore, the characteristics of the device manufactured using the substrate W may not be the desired characteristics.

此外,在基板W為圖案晶圓且第一藥液所為的基板處理為用以去除自然氧化膜之蝕刻處理之情形中,當朝基板W供給第一藥液的時間變得比第一既定時間T1的長度還長時會有下述疑慮:用以構成圖案之氧化矽膜係變得過細,使用基板W所製造的器件的特性無法成為期望的特性。此外,當用以構成圖案之氧化矽膜變得過細時,圖案變得容易崩塌。Furthermore, when the substrate W is a patterned wafer and the substrate treatment performed by the first chemical solution is an etching treatment for removing a natural oxide film, if the time for supplying the first chemical solution to the substrate W becomes longer than the first predetermined time T1, there is a concern that the silicon oxide film used to form the pattern becomes too fine and the characteristics of the device manufactured using the substrate W cannot become the desired characteristics. Furthermore, when the silicon oxide film used to form the pattern becomes too fine, the pattern becomes easy to collapse.

再者,在金屬配線露出至圖案的溝槽的底部之情形中,第一藥液係去除覆蓋金屬配線的自然氧化膜。然而,當朝基板W供給第一藥液的時間變得比第一既定時間T1的長度還長時會有下述疑慮:會被蝕刻至金屬配線為止,使用基板W所製造的器件的電性特性不會變成期望的特性。Furthermore, when the metal wiring is exposed to the bottom of the groove of the pattern, the first chemical solution removes the natural oxide film covering the metal wiring. However, when the time for supplying the first chemical solution to the substrate W becomes longer than the first predetermined time T1, there is a concern that the etching may stop at the metal wiring, and the electrical characteristics of the device manufactured using the substrate W may not become the desired characteristics.

依據本實施形態,由於能抑制因為第一延遲時間DT1導致朝基板W供給第一藥液的時間增加,因此朝基板W供給第一藥液的時間難以變得比第一既定時間T1的長度還長。因此,能抑制上文所說明的不良的發生。According to this embodiment, since the time for supplying the first chemical solution to the substrate W is prevented from increasing due to the first delay time DT1, the time for supplying the first chemical solution to the substrate W is unlikely to become longer than the first predetermined time T1. Therefore, the above-described defect can be prevented from occurring.

此外,在執行第一次的基板處理時,無法藉由開始延遲時間SDT調整朝第一閥VA1發送打開訊號的時序。因此,第一片基板W亦可為仿真晶圓(dummy wafer)。In addition, when performing the first substrate processing, the timing of sending the opening signal to the first valve VA1 cannot be adjusted by the start delay time SDT. Therefore, the first substrate W may also be a dummy wafer.

以上,已參照圖式(圖1至圖22)說明本發明的實施形態。然而,本發明並未限定於上文所說明的實施形態,在未逸離本發明的精神範圍內可在各種態樣中實施。此外,上文所說明的實施形態所揭示之複數個構成要素係能夠適當地變更。例如,亦可將某個實施形態所示的全部的構成要素中的某個構成要素追加至另一個實施形態的構成要素,或者亦可將某個實施形態所示的全部的構成要素中的某幾個構成要素從實施形態刪除。The embodiments of the present invention have been described above with reference to the drawings (FIG. 1 to FIG. 22). However, the present invention is not limited to the embodiments described above, and can be implemented in various forms without departing from the spirit of the present invention. In addition, the plurality of components disclosed in the embodiments described above can be appropriately changed. For example, a certain component of all the components shown in a certain embodiment can be added to the components of another embodiment, or some of the components of all the components shown in a certain embodiment can be deleted from the embodiment.

為了容易理解本發明,圖式係將各個構成要素主體性且示意性地顯示,且所圖示的各個構成要素的厚度、長度、個數、間隔等亦會有因為圖式繪製的關係而與實際不同之情形。此外,上文所說明的實施形態所示的各個構成要素的構成為一例,並未特別限定,在未實質性地逸離本發明的功效之範圍內可進行各種變更。In order to facilitate the understanding of the present invention, the drawings mainly and schematically show each component, and the thickness, length, number, spacing, etc. of each component shown in the drawings may be different from the actual ones due to the drawing of the drawings. In addition, the configuration of each component shown in the embodiment described above is an example and is not particularly limited. Various changes can be made within the scope that does not substantially deviate from the effect of the present invention.

接著,說明已參照圖1至圖22所說明的實施形態(實施形態一至實施形態四)的變化例。Next, variations of the embodiments (embodiment 1 to embodiment 4) described with reference to FIGS. 1 to 22 will be described.

(1)在已參照圖1至圖22所說明的實施形態中,雖然拍攝裝置110係檢測到從噴嘴(第二噴嘴42至第四噴嘴44或者第一噴嘴41至第四噴嘴44)的噴出口(第二噴出口42a至第四噴出口44a或者第一噴出口41a至第四噴出口44a)噴出處理液(第一清洗液、第二清洗液以及第二藥液;或者,第一藥液、第一清洗液、第二清洗液以及第二藥液),然而在用以構成噴嘴之構件(材料)為透明構件(透明的材料)之情形中,拍攝裝置110亦可檢測處理液已經到達至噴嘴的噴出口之事態作為處理液的開始噴出。(1) In the embodiments described with reference to FIGS. 1 to 22 , although the photographing device 110 detects the ejection of the processing liquid (the first cleaning liquid, the second cleaning liquid, and the second chemical liquid; or the first chemical liquid, the first cleaning liquid, the second cleaning liquid, and the second chemical liquid) from the nozzle outlet (the second nozzle 42 to the fourth nozzle 44 or the first nozzle 41 to the fourth nozzle 44) (the second nozzle 42a to the fourth nozzle 44a or the first nozzle 41a to the fourth nozzle 44), in the case where the component (material) used to constitute the nozzle is a transparent component (transparent material), the photographing device 110 may also detect the fact that the processing liquid has reached the nozzle outlet as the start of ejection of the processing liquid.

圖23係顯示已參照圖1至圖22所說明的實施形態的基板處理裝置100的第一變化例之圖。詳細而言,圖23係顯示第一清洗液已經到達至第二噴出口42a時的拍攝圖像SG。如圖23所示,在用以構成第二噴嘴42之構件(材料)為透明構件(透明的材料)之情形中,拍攝裝置110係能檢測第一清洗液已經到達至第二噴嘴42的噴出口(第二噴出口42a)之事態。FIG. 23 is a diagram showing a first variation of the substrate processing apparatus 100 of the embodiment described with reference to FIG. 1 to FIG. 22. Specifically, FIG. 23 shows a captured image SG when the first cleaning liquid has reached the second nozzle 42a. As shown in FIG. 23, in the case where the member (material) constituting the second nozzle 42 is a transparent member (transparent material), the camera 110 can detect that the first cleaning liquid has reached the nozzle (second nozzle 42a) of the second nozzle 42.

在檢測第一清洗液已經到達至第二噴嘴42的噴出口之情形中,第一圖像處理區域KA1亦可設定成映照有從第二噴嘴42的基端至前端之區域。第一圖像處理區域KA1的橫方向的寬度亦可設定成比第二噴嘴42的寬度還寬。第一圖像處理區域KA1的縱方向的長度亦可設定成與第二噴嘴42的長度相同程度。其他的圖像處理區域KA(第二圖像處理區域至第四圖像處理區域)亦設定成與第一圖像處理區域KA1相同。In the case of detecting that the first cleaning liquid has reached the nozzle of the second nozzle 42, the first image processing area KA1 may be set to reflect the area from the base end to the front end of the second nozzle 42. The width of the first image processing area KA1 in the horizontal direction may be set to be wider than the width of the second nozzle 42. The length of the first image processing area KA1 in the longitudinal direction may be set to be the same as the length of the second nozzle 42. The other image processing areas KA (the second image processing area to the fourth image processing area) are also set to be the same as the first image processing area KA1.

(2)在已參照圖1至圖22所說明的實施形態中,雖然拍攝裝置110係檢測到從噴嘴(第二噴嘴42至第四噴嘴44或者第一噴嘴41至第四噴嘴44)的噴出口(第二噴出口42a至第四噴出口44a或者第一噴出口41a至第四噴出口44a)噴出處理液(第一清洗液、第二清洗液以及第二藥液;或者,第一藥液、第一清洗液、第二清洗液以及第二藥液),然而在用以構成噴嘴之構件(材料)為透明構件(透明的材料)之情形中,拍攝裝置110亦可檢測處理液已經到達至噴嘴的噴出口的附近RL之事態作為處理液的開始噴出。(2) In the embodiments described with reference to FIGS. 1 to 22 , although the photographing device 110 detects the ejection of the processing liquid (the first cleaning liquid, the second cleaning liquid, and the second chemical liquid; or the first chemical liquid, the first cleaning liquid, the second cleaning liquid, and the second chemical liquid) from the nozzle outlet (the second nozzle 42 to the fourth nozzle 44 or the first nozzle 41 to the fourth nozzle 44) (the second nozzle 42a to the fourth nozzle 44a or the first nozzle 41a to the fourth nozzle 44), when the component (material) constituting the nozzle is a transparent component (transparent material), the photographing device 110 may detect the fact that the processing liquid has reached the vicinity RL of the nozzle outlet as the start of ejection of the processing liquid.

圖24係顯示已參照圖1至圖22所說明的實施形態的基板處理裝置100的第二變化例之圖。詳細而言,圖24係顯示第一清洗液已經到達至第二噴出口42a的附近RL時的拍攝圖像SG。如圖24所示,在用以構成第二噴嘴42之構件(材料)為透明構件(透明的材料)之情形中,拍攝裝置110係能檢測第一清洗液已經到達至第二噴嘴42的噴出口(第二噴出口42a)的附近RL之事態。在此,第二噴出口42a的附近RL係例如顯示從第二噴嘴42的前端(第二噴出口42a)起的範圍與從第二噴嘴42的前端至基端為止之範圍L相同程度或者第二噴嘴42的前端側狹窄之範圍。其他的噴出口(第一噴出口41a、第三噴出口43a以及第四噴出口44a)的附近RL亦與第二噴出口42a的附近RL相同。FIG. 24 is a diagram showing a second variation of the substrate processing apparatus 100 of the embodiment described with reference to FIG. 1 to FIG. 22. Specifically, FIG. 24 shows a captured image SG when the first cleaning liquid has reached the vicinity RL of the second nozzle 42a. As shown in FIG. 24, in the case where the member (material) constituting the second nozzle 42 is a transparent member (transparent material), the capturing device 110 can detect that the first cleaning liquid has reached the vicinity RL of the nozzle (second nozzle 42a) of the second nozzle 42. Here, the vicinity RL of the second nozzle 42a indicates, for example, that the range from the front end of the second nozzle 42 (the second nozzle 42a) is the same as the range L from the front end to the base end of the second nozzle 42 or the range narrowed toward the front end of the second nozzle 42. The vicinity RL of the other nozzles (the first nozzle 41a, the third nozzle 43a, and the fourth nozzle 44a) is also the same as the vicinity RL of the second nozzle 42a.

在檢測第一清洗液已經到達至第二噴嘴42的噴出口的附近RL之事態的情形中,第一圖像處理區域KA1亦可設定成映照有從第二噴嘴42的基端至前端之區域。其他的圖像處理區域KA(第二圖像處理區域至第四圖像處理區域)亦設定成與第一圖像處理區域KA1相同。In the case of detecting that the first cleaning liquid has reached the vicinity RL of the nozzle of the second nozzle 42, the first image processing area KA1 may be set to reflect the area from the base end to the front end of the second nozzle 42. The other image processing areas KA (the second image processing area to the fourth image processing area) are also set to be the same as the first image processing area KA1.

(3)在已參照圖1至圖22所說明的實施形態中,雖然基板處理裝置100係具備拍攝裝置110作為檢測部,然而只要能檢測開始噴出處理液,則檢測部係未限定於拍攝裝置110。例如,基板處理裝置100亦可具備光感測器120作為檢測部。(3) In the embodiments described with reference to FIGS. 1 to 22 , the substrate processing apparatus 100 includes the camera 110 as the detection unit. However, the detection unit is not limited to the camera 110 as long as it can detect the start of ejection of the processing liquid. For example, the substrate processing apparatus 100 may include a photo sensor 120 as the detection unit.

圖25係顯示已參照圖1至圖22所說明的實施形態的基板處理裝置100的第三變化例之圖。圖25所示的基板處理裝置100係具備光感測器120作為檢測部。詳細而言,基板處理裝置100係具備三個光感測器120。三個光感測器120係包含相對於第二噴嘴42而設置之光感測器120、相對於第三噴嘴43而設置之光感測器120、以及相對於第四噴嘴44而設置之光感測器120。圖25係顯示相對於第二噴嘴42而設置之光感測器120。以下,會有將相對於第二噴嘴42而設置之光感測器120稱為「光感測器121」之情形。FIG. 25 is a diagram showing a third variation of the substrate processing apparatus 100 of the embodiment described with reference to FIG. 1 to FIG. 22. The substrate processing apparatus 100 shown in FIG. 25 has a photo sensor 120 as a detection unit. Specifically, the substrate processing apparatus 100 has three photo sensors 120. The three photo sensors 120 include a photo sensor 120 disposed relative to the second nozzle 42, a photo sensor 120 disposed relative to the third nozzle 43, and a photo sensor 120 disposed relative to the fourth nozzle 44. FIG. 25 shows the photo sensor 120 disposed relative to the second nozzle 42. Hereinafter, the photo sensor 120 provided opposite to the second nozzle 42 may be referred to as “photo sensor 121”.

如圖25所示,光感測器121係對位於待機位置的第二噴嘴42的下方區域照射光線,並接受從第二噴嘴42的下方區域反射的光線。因此,從第二噴嘴42的噴出口(第二噴出口42a)噴出第一清洗液且第一清洗液通過第二噴嘴42的下方區域,藉此光感測器121所接受的光線係變化。因此,光感測器121係能檢測第一清洗液已經從第二噴嘴42的噴出口噴出之事態。As shown in FIG. 25 , the photo sensor 121 irradiates light to the area below the second nozzle 42 located at the standby position, and receives light reflected from the area below the second nozzle 42. Therefore, the first cleaning liquid is ejected from the ejection port (second ejection port 42a) of the second nozzle 42 and the first cleaning liquid passes through the area below the second nozzle 42, whereby the light received by the photo sensor 121 changes. Therefore, the photo sensor 121 can detect that the first cleaning liquid has been ejected from the ejection port of the second nozzle 42.

與光感測器121同樣地,相對於第三噴嘴43而設置之光感測器120亦檢測已經從第三噴嘴43的噴出口(第三噴出口43a)噴出第二清洗液之事態。與光感測器121同樣地,相對於第四噴嘴44而設置之光感測器120亦檢測已經從位於處理位置的第四噴嘴44的噴出口(第四噴出口44a)噴出第二藥液之事態。進一步地,與在實施形態二所說明的拍攝裝置110同樣地,相對於第四噴嘴44而設置之光感測器120亦可檢測已經從位於處理位置的第一噴嘴41的噴出口(第一噴出口41a)噴出第一藥液之事態。Similar to the photo sensor 121, the photo sensor 120 provided for the third nozzle 43 also detects that the second cleaning solution has been ejected from the ejection port (third ejection port 43a) of the third nozzle 43. Similar to the photo sensor 121, the photo sensor 120 provided for the fourth nozzle 44 also detects that the second chemical solution has been ejected from the ejection port (fourth ejection port 44a) of the fourth nozzle 44 located at the processing position. Furthermore, similarly to the camera 110 described in the second embodiment, the photo sensor 120 provided opposite to the fourth nozzle 44 can also detect that the first chemical solution has been ejected from the ejection port (first ejection port 41a) of the first nozzle 41 located at the processing position.

與已參照圖23所說明的拍攝裝置110同樣地,在用以構成噴嘴(第一噴嘴41至第四噴嘴44)之構件(材料)為透明構件(透明的材料)之情形中,光感測器120亦可檢測處理液(第一藥液、第一清洗液、第二清洗液、第二藥液)已經到達至噴嘴的噴出口(第一噴出口41a至第四噴出口44a)之事態。或者,與已參照圖24所說明的拍攝裝置110同樣地,在用以構成噴嘴(第一噴嘴41至第四噴嘴44)之構件(材料)為透明構件(透明的材料)之情形中,光感測器120亦可檢測處理液(第一藥液、第一清洗液、第二清洗液、第二藥液)已經到達至噴嘴的噴出口(第一噴出口41a至第四噴出口44a)的附近RL之事態。Similar to the shooting device 110 described with reference to Figure 23, in the case where the components (materials) used to constitute the nozzle (the first nozzle 41 to the fourth nozzle 44) are transparent components (transparent materials), the light sensor 120 can also detect that the processing liquid (the first chemical liquid, the first cleaning liquid, the second cleaning liquid, the second chemical liquid) has reached the nozzle outlet (the first nozzle 41a to the fourth nozzle 44a). Alternatively, similar to the shooting device 110 described with reference to Figure 24, in the case where the components (materials) used to constitute the nozzle (the first nozzle 41 to the fourth nozzle 44) are transparent components (transparent materials), the light sensor 120 can also detect the situation where the processing liquid (the first chemical liquid, the first cleaning liquid, the second cleaning liquid, the second chemical liquid) has reached the vicinity RL of the nozzle outlet (the first nozzle 41a to the fourth nozzle 44a).

圖26係顯示已參照圖1至圖22所說明的實施形態的基板處理裝置100的第四變化例之圖。詳細而言,如圖26所示,在用以構成第二噴嘴42之構件(材料)為透明構件(透明的材料)之情形中,光感測器121亦可對第二噴出口42a的附近RL照射光線並接受來自第二噴出口42a的附近RL的反射光。在用以構成第二噴嘴42之構件(材料)為透明構件(透明的材料)之情形中,在第一清洗液通過第二噴出口42a的附近RL時光感測器121所接受的光線係變化。因此,光感測器121係能檢測第一清洗液已經到達至第二噴嘴42的噴出口的附近RL之事態。FIG. 26 is a diagram showing a fourth variation of the substrate processing apparatus 100 of the embodiment described with reference to FIG. 1 to FIG. 22. Specifically, as shown in FIG. 26, in the case where the member (material) used to constitute the second nozzle 42 is a transparent member (transparent material), the photo sensor 121 can also irradiate light to the vicinity RL of the second nozzle 42a and receive reflected light from the vicinity RL of the second nozzle 42a. In the case where the member (material) used to constitute the second nozzle 42 is a transparent member (transparent material), the light received by the photo sensor 121 changes when the first cleaning liquid passes through the vicinity RL of the second nozzle 42a. Therefore, the photo sensor 121 can detect that the first cleaning liquid has reached the vicinity RL of the nozzle of the second nozzle 42.

與光感測器121同樣地,相對於第三噴嘴43而設置之光感測器120亦可檢測第二清洗液已經到達至第三噴出口43a的附近RL之事態。與光感測器121同樣地,相對於第四噴嘴44而設置之光感測器120亦可檢測第二藥液已經到達至第四噴出口44a的附近RL之事態。再者,相對於第四噴嘴44而設置之光感測器120亦可檢測第一藥液已經到達至第一噴出口41a的附近RL之事態。Similar to the photo sensor 121, the photo sensor 120 provided for the third nozzle 43 can also detect that the second cleaning liquid has reached the vicinity RL of the third nozzle 43a. Similar to the photo sensor 121, the photo sensor 120 provided for the fourth nozzle 44 can also detect that the second chemical liquid has reached the vicinity RL of the fourth nozzle 44a. Furthermore, the photo sensor 120 provided for the fourth nozzle 44 can also detect that the first chemical liquid has reached the vicinity RL of the first nozzle 41a.

(4)在參照圖1至圖22所說明的實施形態中,雖然基板處理裝置100係具備拍攝裝置110作為檢測部,然而基板處理裝置100亦可具備電容感測器130作為檢測部。(4) In the embodiment described with reference to FIGS. 1 to 22 , although the substrate processing apparatus 100 includes the imaging device 110 as the detection unit, the substrate processing apparatus 100 may also include the capacitive sensor 130 as the detection unit.

圖27以及圖28係顯示已參照圖1至圖22所說明的實施形態的基板處理裝置100的第五變化例之圖。圖27以及圖28所示的基板處理裝置100係具備電容感測器130作為檢測部。電容感測器130係使檢測區域產生電場,藉由檢測對象進入至電場時的電容的變化來檢測檢測對象。FIG27 and FIG28 are diagrams showing a fifth variation of the substrate processing apparatus 100 of the embodiment described with reference to FIG1 to FIG22. The substrate processing apparatus 100 shown in FIG27 and FIG28 has a capacitance sensor 130 as a detection unit. The capacitance sensor 130 generates an electric field in a detection region and detects a detection object by a change in capacitance when the detection object enters the electric field.

詳細而言,基板處理裝置100係具備三個電容感測器130。三個電容感測器130係包含設置於第二噴嘴42的電容感測器130、設置於第三噴嘴43的電容感測器130、以及設置於第四噴嘴44的電容感測器130。圖27以及圖28係顯示設置於第二噴嘴42的電容感測器130。以下,會有將設置於第二噴嘴42的電容感測器130稱為「電容感測器131」之情形。Specifically, the substrate processing apparatus 100 includes three capacitance sensors 130. The three capacitance sensors 130 include a capacitance sensor 130 provided at the second nozzle 42, a capacitance sensor 130 provided at the third nozzle 43, and a capacitance sensor 130 provided at the fourth nozzle 44. FIG. 27 and FIG. 28 show the capacitance sensor 130 provided at the second nozzle 42. Hereinafter, the capacitance sensor 130 provided at the second nozzle 42 may be referred to as "capacitance sensor 131".

如圖27以及圖28所示,電容感測器131係設置於第二噴出口42a的附近RL。電容感測器131係使第二噴出口42a的附近RL產生電場。因此,第一清洗液通過第二噴出口42a的附近RL時,電容感測器131係檢測第一清洗液。因此,電容感測器131係能檢測第一清洗液已經到達至第二噴出口42a的附近RL之事態。As shown in FIG. 27 and FIG. 28 , the capacitance sensor 131 is disposed in the vicinity RL of the second ejection port 42a. The capacitance sensor 131 generates an electric field in the vicinity RL of the second ejection port 42a. Therefore, when the first cleaning liquid passes through the vicinity RL of the second ejection port 42a, the capacitance sensor 131 detects the first cleaning liquid. Therefore, the capacitance sensor 131 can detect that the first cleaning liquid has reached the vicinity RL of the second ejection port 42a.

與電容感測器131同樣地,設置於第三噴嘴43的電容感測器130亦設置於第三噴出口43a的附近RL,檢測第二清洗液已經到達至第三噴出口43a的附近RL之事態。與電容感測器131同樣地,設置於第四噴嘴44的電容感測器130係設置於第四噴出口44a的附近RL,檢測第二藥液已經到達至第四噴出口44a的附近RL之事態。Similar to the capacitance sensor 131, the capacitance sensor 130 provided at the third nozzle 43 is also provided near the third nozzle 43a RL to detect that the second cleaning liquid has reached the third nozzle 43a near RL. Similar to the capacitance sensor 131, the capacitance sensor 130 provided at the fourth nozzle 44 is provided near the fourth nozzle 44a RL to detect that the second chemical liquid has reached the fourth nozzle 44a near RL.

此外,基板處理裝置100亦可進一步地具備設置於第一噴嘴41的電容感測器130。與電容感測器131同樣地,設置於第一噴嘴41的電容感測器130係設置於第一噴出口41a的附近RL,檢測第一藥液已經到達至第一噴出口41a的附近RL之事態。In addition, the substrate processing apparatus 100 may further include a capacitance sensor 130 disposed at the first nozzle 41. Similar to the capacitance sensor 131, the capacitance sensor 130 disposed at the first nozzle 41 is disposed near the first nozzle 41a RL to detect that the first chemical solution has reached the near the first nozzle 41a RL.

(5)在參照圖1至圖22所說明的實施形態中,雖然針對用以夾持基板W之夾持式的夾具作為用以保持基板W之構成進行說明,然而用以保持基板W之構成只要能水平地保持基板W則無特別限定。例如,基板保持部3亦可為真空式的夾具,亦可為柏努利(Bernoulli)式的夾具。(5) In the embodiments described with reference to FIGS. 1 to 22 , a clamping-type fixture for clamping the substrate W is described as a structure for holding the substrate W. However, the structure for holding the substrate W is not particularly limited as long as it can horizontally hold the substrate W. For example, the substrate holding portion 3 may be a vacuum-type fixture or a Bernoulli-type fixture.

(6)在已參照圖1至圖22所說明的實施形態中,雖然第二噴嘴42係從待機位置移動至處理位置,然而第二噴嘴42亦可不從待機位置移動至處理位置。亦即,第二噴嘴42亦可從待機位置將第一清洗液供給至基板W。(6) In the embodiment described with reference to FIGS. 1 to 22 , the second nozzle 42 is moved from the standby position to the processing position. However, the second nozzle 42 may not be moved from the standby position to the processing position. That is, the second nozzle 42 may supply the first cleaning liquid to the substrate W from the standby position.

(7)在已參照圖1至圖22所說明的實施形態中,雖然拍攝裝置110係配置於處理室2的外側,然而拍攝裝置110亦可配置於處理室2的內側。(7) In the embodiments described with reference to FIGS. 1 to 22 , although the camera 110 is disposed outside the processing chamber 2 , the camera 110 may also be disposed inside the processing chamber 2 .

(8)在已參照圖1至圖22所說明的實施形態中,雖然控制部102係執行計時,然而基板處理裝置100亦可具備計時電路。在此種情形中,控制部102係使計時電路執行計時。計時電路亦可設置於控制裝置101。(8) In the embodiments described with reference to FIGS. 1 to 22 , the control unit 102 performs timing. However, the substrate processing apparatus 100 may also include a timing circuit. In this case, the control unit 102 causes the timing circuit to perform timing. The timing circuit may also be provided in the control device 101.

(9)在已參照圖1至圖22所說明的實施形態中,雖然基板處理裝置100係具備一個拍攝裝置110,然而基板處理裝置100亦可具備複數個拍攝裝置110。 [產業可利用性] (9) In the embodiments described with reference to FIGS. 1 to 22 , although the substrate processing apparatus 100 has one camera 110 , the substrate processing apparatus 100 may also have a plurality of camera 110 . [Industrial Applicability]

本發明係能有效地應用於用以處理基板之裝置以及用以處理基板之方法。因此,本發明係具有產業可利用性。The present invention can be effectively applied to an apparatus for processing a substrate and a method for processing a substrate. Therefore, the present invention has industrial applicability.

1:處理部 2:處理室 2a:側壁 3:基板保持部 5:第一噴嘴移動機構 6:第二噴嘴移動機構 7:基板旋轉部 9:液體接住部 31:自轉基座 32:夾具構件 41:第一噴嘴 41a:第一噴出口 42:第二噴嘴 42a:第二噴出口 43:第三噴嘴 43a:第三噴出口 44:第四噴嘴 44a:第四噴出口 51:第一噴嘴臂 52:第二噴嘴臂 53:第一噴嘴基台 54:第一噴嘴移動部 61:第三噴嘴臂 62:第二噴嘴基台 63:第二噴嘴移動部 71:馬達本體 72:軸部 81:第一液體供給配管 82:第二液體供給配管 83:第三液體供給配管 84:第四液體供給配管 100:基板處理裝置 100A:流體櫃 100B:流體箱 101:控制裝置 102:控制部 103:記憶部 110:拍攝裝置 111:照明裝置 112:通訊部 113:輸入部 114:顯示部 120,121:光感測器 130,131:電容感測器 ADT:追加延遲時間 AX1:第一旋轉軸線 AX2:第二旋轉軸線 AX3:第三旋轉軸線 CP1,CP2,CP3:中心 CR:中心機器人 DT1:第一延遲時間 DT2:第二延遲時間 DT3:第三延遲時間 DT4:第四延遲時間 GA:輸入畫面 GS:外部裝置 IR:索引機器人 KA:圖像處理區域 KA1:第一圖像處理區域 L:範圍 LP:裝載埠 NR:輸入欄位 NW:網路 RL:附近 SB1:第一倒吸閥 SB2:第二倒吸閥 SB3:第三倒吸閥 SB4:第四倒吸閥 SDT:開始延遲時間 SG:拍攝圖像 SH:拍攝範圍 S1至S7,S11至S16,S21至S26,S31至S37,S41至S45,S51至S57,S71至S77,S251至S252,S421至S422:步驟 TW:塔 T1:第一既定時間 T2:第二既定時間 T3:第三既定時間 T4:第四既定時間 T5:第五既定時間 t,t1至t9,t11至t24:時刻 VA1:第一閥 VA2:第二閥 VA3:第三閥 VA4:第四閥 W:基板 1: Processing unit 2: Processing chamber 2a: Side wall 3: Substrate holding unit 5: First nozzle moving mechanism 6: Second nozzle moving mechanism 7: Substrate rotating unit 9: Liquid receiving unit 31: Rotating base 32: Clamping member 41: First nozzle 41a: First nozzle outlet 42: Second nozzle 42a: Second nozzle outlet 43: Third nozzle 43a: Third nozzle outlet 44: Fourth nozzle 44a: Fourth nozzle outlet 51: First nozzle arm 52: Second nozzle arm 53: First nozzle base 54: First nozzle moving unit 61: Third nozzle arm 62: Second nozzle base 63: Second nozzle moving part 71: Motor body 72: Shaft 81: First liquid supply pipe 82: Second liquid supply pipe 83: Third liquid supply pipe 84: Fourth liquid supply pipe 100: Substrate processing device 100A: Fluid cabinet 100B: Fluid box 101: Control device 102: Control unit 103: Memory unit 110: Camera device 111: Lighting device 112: Communication unit 113: Input unit 114: Display unit 120,121: Photo sensor 130,131: Capacitive sensor ADT: Additional delay time AX1: First rotation axis AX2: Second rotation axis AX3: Third rotation axis CP1, CP2, CP3: Center CR: Center robot DT1: First delay time DT2: Second delay time DT3: Third delay time DT4: Fourth delay time GA: Input screen GS: External device IR: Index robot KA: Image processing area KA1: First image processing area L: Range LP: Loading port NR: Input field NW: Network RL: Nearby SB1: First back suction valve SB2: Second back suction valve SB3: Third back suction valve SB4: Fourth back suction valve SDT: Start delay time SG: Shooting image SH: Shooting range S1 to S7, S11 to S16, S21 to S26, S31 to S37, S41 to S45, S51 to S57, S71 to S77, S251 to S252, S421 to S422: Steps TW: Tower T1: First set time T2: Second set time T3: Third set time T4: Fourth set time T5: Fifth set time t, t1 to t9, t11 to t24: Moment VA1: First valve VA2: Second valve VA3: Third valve VA4: Fourth valve W: Base plate

[圖1]係顯示本發明的實施形態一的基板處理裝置的示意圖。 [圖2]係示意性地顯示本發明的實施形態一的基板處理裝置所包含的處理部的構成之俯視圖。 [圖3]係示意性地顯示本發明的實施形態一的基板處理裝置的構成之圖。 [圖4]係顯示本發明的實施形態一的基板處理裝置所包含的拍攝裝置的拍攝範圍之圖。 [圖5]係顯示正在從第一噴出口噴出第一藥液時的拍攝圖像之圖。 [圖6]係顯示已經開始從第二噴出口噴出第一清洗液時的拍攝圖像之圖。 [圖7]係顯示本發明的實施形態一的基板處理方法之流程圖。 [圖8]係顯示基板處理的流程之流程圖。 [圖9]係顯示基板處理的流程之流程圖。 [圖10]係顯示基板處理的流程之流程圖。 [圖11]係顯示基板處理的流程之流程圖。 [圖12]係顯示第一閥至第四閥的開閉動作以及拍攝裝置所為的檢測動作之時序圖。 [圖13]係顯示本發明的實施形態二的基板處理裝置的構成的一部分之方塊圖。 [圖14]係顯示本發明的實施形態二的基板處理方法之流程圖。 [圖15]係顯示基板處理的流程之流程圖。 [圖16]係顯示本發明的實施形態三的基板處理裝置的構成的一部分之方塊圖。 [圖17]係顯示顯示部所顯示的輸入畫面之圖。 [圖18]係顯示基板處理的流程之流程圖。 [圖19]係顯示基板處理的流程之流程圖。 [圖20]係顯示第一閥至第四閥的開閉動作以及拍攝裝置所為的檢測動作之時序圖。 [圖21]係本發明的實施形態四的基板處理方法所包含的基板處理的流程之流程圖。 [圖22]係顯示第一閥與第二閥的開閉動作以及拍攝裝置所為的檢測動作之時序圖。 [圖23]係顯示本發明的實施形態一至實施形態四的基板處理裝置的第一變化例之圖。 [圖24]係顯示本發明的實施形態一至實施形態四的基板處理裝置的第二變化例之圖。 [圖25]係顯示本發明的實施形態一至實施形態四的基板處理裝置的第三變化例之圖。 [圖26]係顯示本發明的實施形態一至實施形態四的基板處理裝置的第四變化例之圖。 [圖27]係顯示本發明的實施形態一至實施形態四的基板處理裝置的第五變化例之圖。 [圖28]係顯示本發明的實施形態一至實施形態四的基板處理裝置的第五變化例之圖。 [FIG. 1] is a schematic diagram showing a substrate processing device of the first embodiment of the present invention. [FIG. 2] is a top view schematically showing the structure of a processing unit included in the substrate processing device of the first embodiment of the present invention. [FIG. 3] is a diagram schematically showing the structure of the substrate processing device of the first embodiment of the present invention. [FIG. 4] is a diagram showing the shooting range of the shooting device included in the substrate processing device of the first embodiment of the present invention. [FIG. 5] is a diagram showing a shot image when the first chemical solution is being ejected from the first ejection port. [FIG. 6] is a diagram showing a shot image when the first cleaning solution has started to be ejected from the second ejection port. [FIG. 7] is a flow chart showing the substrate processing method of the first embodiment of the present invention. [Figure 8] is a flow chart showing the process of substrate processing. [Figure 9] is a flow chart showing the process of substrate processing. [Figure 10] is a flow chart showing the process of substrate processing. [Figure 11] is a flow chart showing the process of substrate processing. [Figure 12] is a timing chart showing the opening and closing actions of the first valve to the fourth valve and the detection action performed by the camera. [Figure 13] is a block diagram showing a part of the structure of the substrate processing device of the second embodiment of the present invention. [Figure 14] is a flow chart showing the substrate processing method of the second embodiment of the present invention. [Figure 15] is a flow chart showing the process of substrate processing. [Figure 16] is a block diagram showing a part of the structure of the substrate processing device of the third embodiment of the present invention. [Fig. 17] is a diagram showing an input screen displayed on the display unit. [Fig. 18] is a flow chart showing the process of substrate processing. [Fig. 19] is a flow chart showing the process of substrate processing. [Fig. 20] is a timing chart showing the opening and closing actions of the first valve to the fourth valve and the detection action performed by the camera. [Fig. 21] is a flow chart showing the process of substrate processing included in the substrate processing method of the fourth embodiment of the present invention. [Fig. 22] is a timing chart showing the opening and closing actions of the first valve and the second valve and the detection action performed by the camera. [Fig. 23] is a diagram showing a first variation of the substrate processing device of the first embodiment to the fourth embodiment of the present invention. [FIG. 24] is a diagram showing a second variation of the substrate processing apparatus of the first to fourth embodiments of the present invention. [FIG. 25] is a diagram showing a third variation of the substrate processing apparatus of the first to fourth embodiments of the present invention. [FIG. 26] is a diagram showing a fourth variation of the substrate processing apparatus of the first to fourth embodiments of the present invention. [FIG. 27] is a diagram showing a fifth variation of the substrate processing apparatus of the first to fourth embodiments of the present invention. [FIG. 28] is a diagram showing a fifth variation of the substrate processing apparatus of the first to fourth embodiments of the present invention.

S4,S11至S16:步驟 S4, S11 to S16: Steps

Claims (23)

一種基板處理方法,係用以藉由處理液處理基板,並包含: 保持前述基板之工序; 開始朝先行噴嘴供給先行處理液並從前述先行噴嘴的噴出口朝向被保持的前述基板噴出前述先行處理液之工序; 開始朝後行噴嘴供給後行處理液並從前述後行噴嘴的噴出口朝向被保持的前述基板噴出前述後行處理液之工序; 檢測工序,係檢測開始從前述後行噴嘴的前述噴出口噴出前述後行處理液;以及 停止工序,係因應檢測到開始噴出前述後行處理液之事態,停止朝前述先行噴嘴供給前述先行處理液。 A substrate processing method is used to process a substrate by a processing liquid, and includes: A process of holding the aforementioned substrate; A process of starting to supply the preceding processing liquid to the preceding nozzle and spraying the preceding processing liquid from the nozzle of the preceding nozzle toward the aforementioned substrate being held; A process of starting to supply the following processing liquid to the following nozzle and spraying the following processing liquid from the nozzle of the following nozzle toward the aforementioned substrate being held; A detection process of detecting the start of spraying the following processing liquid from the nozzle of the following nozzle; and A stopping process of stopping the supply of the preceding processing liquid to the preceding nozzle in response to detecting the start of spraying of the following processing liquid. 如請求項1所記載之基板處理方法,其中在前述檢測工序中檢測已經從前述後行噴嘴的前述噴出口噴出前述後行處理液之事態。The substrate processing method as recited in claim 1, wherein in the detection step, the fact that the subsequent processing liquid has been ejected from the ejection outlet of the subsequent ejection nozzle is detected. 如請求項1所記載之基板處理方法,其中在前述檢測工序中檢測前述後行處理液已經到達至前述後行噴嘴的前述噴出口之事態。The substrate processing method as recited in claim 1, wherein in the detection step, it is detected that the subsequent processing liquid has reached the nozzle outlet of the subsequent nozzle. 如請求項1所記載之基板處理方法,其中在前述檢測工序中檢測前述後行處理液已經到達至前述後行噴嘴的前述噴出口的附近之事態。The substrate processing method as recited in claim 1, wherein in the detection step, it is detected that the subsequent processing liquid has reached the vicinity of the nozzle outlet of the subsequent nozzle. 如請求項2至4中任一項所記載之基板處理方法,其中在前述檢測工序中藉由拍攝裝置檢測開始噴出前述後行處理液。A substrate processing method as recited in any one of claims 2 to 4, wherein in the aforementioned detection step, the spraying of the aforementioned post-processing liquid is started by detection by a photographing device. 如請求項2至4中任一項所記載之基板處理方法,其中在前述檢測工序中藉由光感測器檢測開始噴出前述後行處理液。A substrate processing method as recited in any one of claims 2 to 4, wherein in the detection step, the spraying of the post-processing liquid is started by detection by a photo sensor. 如請求項4所記載之基板處理方法,其中在前述檢測工序中藉由電容感測器檢測開始噴出前述後行處理液。As described in claim 4, the substrate processing method starts to spray the post-processing liquid by detecting with a capacitive sensor in the detection process. 如請求項1至4中任一項所記載之基板處理方法,其中在前述停止工序中在檢測開始噴出前述後行處理液後直至經過預定時間後,停止朝前述先行噴嘴供給前述先行處理液。A substrate processing method as recited in any one of claims 1 to 4, wherein in the stopping step, supply of the preceding processing liquid to the preceding nozzle is stopped after the start of spraying of the following processing liquid is detected and until a predetermined time has passed. 如請求項1至4中任一項所記載之基板處理方法,其中進一步包含下述工序:基於供給時間以及既定時間來調整前述先行處理液的開始供給時序,前述供給時間係顯示從開始供給前述先行處理液起至前述停止工序中停止供給前述先行處理液為止之時間間隔,前述既定時間係制定了用以供給前述先行處理液之時間間隔。A substrate processing method as described in any one of claim items 1 to 4, further comprising the following process: adjusting the start supply timing of the aforementioned preliminary treatment liquid based on a supply time and a set time, wherein the aforementioned supply time indicates the time interval from the start of supplying the aforementioned preliminary treatment liquid to the stop of supplying the aforementioned preliminary treatment liquid in the aforementioned stop process, and the aforementioned set time is a time interval established for supplying the aforementioned preliminary treatment liquid. 如請求項1至4中任一項所記載之基板處理方法,其中進一步地包含下述工序:取得前述先行處理液的停止供給時序。The substrate processing method as recited in any one of claims 1 to 4 further comprises the following step: obtaining a timing for stopping supply of the preceding processing liquid. 如請求項1至4中任一項所記載之基板處理方法,其中進一步地包含下述工序:檢測開始從前述先行噴嘴的前述噴出口噴出前述先行處理液。The substrate processing method as recited in any one of claims 1 to 4 further comprises the following step: detecting the start of ejection of the preliminary processing liquid from the ejection outlet of the preliminary nozzle. 一種基板處理裝置,係用以藉由處理液處理基板,並具備: 基板保持部,係保持前述基板; 先行噴嘴,係具有噴出口,從前述噴出口朝向被前述基板保持部保持的前述基板噴出先行處理液; 先行閥,係控制朝前述先行噴嘴供給前述先行處理液以及停止朝前述先行噴嘴供給前述先行處理液; 後行噴嘴,係具有噴出口,從前述噴出口朝向被前述基板保持部保持的前述基板噴出後行處理液; 後行閥,係控制朝前述後行噴嘴供給前述後行處理液以及停止朝前述後行噴嘴供給前述後行處理液; 檢測部,係檢測開始從前述後行噴嘴的前述噴出口噴出前述後行處理液;以及 控制部,係控制前述先行閥開始朝前述先行噴嘴供給前述先行處理液後,控制前述後行閥開始朝前述後行噴嘴供給前述後行處理液; 前述控制部係因應前述檢測部檢測到開始噴出前述後行處理液之事態執行關閉動作控制處理,前述關閉動作控制處理係控制前述先行閥停止供給前述先行處理液。 A substrate processing device is used to process a substrate with a processing liquid, and comprises: A substrate holding portion for holding the substrate; A leading nozzle having a nozzle, from which the leading processing liquid is sprayed toward the substrate held by the substrate holding portion; A leading valve for controlling the supply of the leading processing liquid to the leading nozzle and stopping the supply of the leading processing liquid to the leading nozzle; A trailing nozzle having a nozzle, from which the trailing processing liquid is sprayed toward the substrate held by the substrate holding portion; A trailing valve for controlling the supply of the trailing processing liquid to the trailing nozzle and stopping the supply of the trailing processing liquid to the trailing nozzle; The detection unit detects the start of spraying the aforementioned post-processing liquid from the aforementioned spray outlet of the aforementioned post-processing nozzle; and the control unit controls the aforementioned post-processing valve to start supplying the aforementioned post-processing liquid to the aforementioned post-processing nozzle after controlling the aforementioned post-processing valve to start supplying the aforementioned post-processing liquid to the aforementioned post-processing nozzle; the aforementioned control unit performs a closing action control process in response to the aforementioned detection unit detecting the start of spraying the aforementioned post-processing liquid, and the aforementioned closing action control process controls the aforementioned post-processing valve to stop supplying the aforementioned post-processing liquid. 如請求項12所記載之基板處理裝置,其中前述檢測部係檢測已經從前述後行噴嘴的前述噴出口噴出前述後行處理液之事態。The substrate processing apparatus as recited in claim 12, wherein the detection unit detects whether the subsequent processing liquid has been ejected from the ejection outlet of the subsequent nozzle. 如請求項12所記載之基板處理裝置,其中前述檢測部係檢測前述後行處理液已經到達至前述後行噴嘴的前述噴出口之事態。The substrate processing apparatus as recited in claim 12, wherein the detection unit detects whether the subsequent processing liquid has reached the nozzle outlet of the subsequent nozzle. 如請求項12所記載之基板處理裝置,其中前述檢測部係檢測前述後行處理液已經到達至前述後行噴嘴的前述噴出口的附近之事態。The substrate processing apparatus as recited in claim 12, wherein the detection unit detects whether the subsequent processing liquid has reached the vicinity of the nozzle outlet of the subsequent nozzle. 如請求項13至15中任一項所記載之基板處理裝置,其中前述檢測部係包含:拍攝裝置,係檢測開始噴出前述後行處理液。A substrate processing device as recited in any one of claims 13 to 15, wherein the detection section comprises: a photographing device for detecting the start of spraying of the post-processing liquid. 如請求項13至15中任一項所記載之基板處理裝置,其中前述檢測部係包含:光感測器,係檢測開始噴出前述後行處理液。A substrate processing device as recited in any one of claims 13 to 15, wherein the detection unit comprises: a photo sensor for detecting the start of spraying of the post-processing liquid. 如請求項15所記載之基板處理裝置,其中前述檢測部係包含:電容感測器,係檢測開始噴出前述後行處理液。As described in claim 15, the substrate processing device, wherein the aforementioned detection unit includes: a capacitive sensor, which detects the start of spraying the aforementioned post-processing liquid. 如請求項12至15中任一項所記載之基板處理裝置,其中前述控制部係在前述檢測部檢測開始噴出前述後行處理液後直至經過預定時間後,控制前述先行閥停止供給前述先行處理液。As described in any one of claim 12 to 15, the control unit controls the lead valve to stop supplying the lead processing liquid after the detection unit detects the start of spraying of the post-processing liquid and after a predetermined time has passed. 如請求項12至15中任一項所記載之基板處理裝置,其中前述控制部係基於供給時間以及既定時間來調整前述先行處理液的開始供給時序,前述供給時間係顯示從開始供給前述先行處理液起至前述關閉動作控制處理所為的停止供給前述先行處理液為止之時間間隔,前述既定時間係制定了用以供給前述先行處理液之時間間隔。A substrate processing device as described in any one of claim items 12 to 15, wherein the control unit adjusts the start timing of supplying the preceding treatment liquid based on a supply time and a set time, wherein the supply time indicates the time interval from the start of supplying the preceding treatment liquid to the stop of supplying the preceding treatment liquid by the closing action control process, and the set time is a time interval established for supplying the preceding treatment liquid. 如請求項12至15中任一項所記載之基板處理裝置,其中前述控制部係取得前述先行處理液的停止供給時序。As described in any one of claims 12 to 15, the control unit obtains the timing for stopping the supply of the preceding processing liquid. 如請求項12至15中任一項所記載之基板處理裝置,其中前述檢測部係檢測開始從前述先行噴嘴的前述噴出口噴出前述先行處理液。A substrate processing apparatus as recited in any one of claims 12 to 15, wherein the detection unit detects the start of ejection of the preliminary processing liquid from the ejection outlet of the preliminary nozzle. 如請求項12至15中任一項所記載之基板處理裝置,其中進一步地具備:複數個處理室,係收容前述基板保持部、前述先行噴嘴以及前述後行噴嘴; 前述控制部係針對每個前述處理室執行前述關閉動作控制處理。 The substrate processing device as recited in any one of claim items 12 to 15 further comprises: a plurality of processing chambers for accommodating the aforementioned substrate holding portion, the aforementioned leading nozzle, and the aforementioned trailing nozzle; The aforementioned control portion performs the aforementioned closing action control processing for each of the aforementioned processing chambers.
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