JP2023127856A - Substrate processing method and substrate processing apparatus - Google Patents

Abstract

To provide a substrate processing method and a substrate processing apparatus which can reduce a burden on a worker.SOLUTION: A substrate processing method comprises the steps of: discharging preceding processing liquid from a discharge port 41a of a preceding nozzle (41) toward a held substrate W by starting supply of the preceding processing liquid to the preceding nozzle 41 (step S12); starting supply of the succeeding processing liquid to the succeeding nozzle 42 (step S14); discharging succeeding processing liquid from a discharge port 42a of a succeeding nozzle 42 toward the held substrate W (step S15); detecting the discharge start of the succeeding processing liquid from the discharge port 42a of the succeeding nozzle 42 (step S15); and stopping supply of the preceding processing liquid to the preceding nozzle 41 according to the detection of the discharge start of the succeeding processing liquid (step S16).SELECTED DRAWING: Figure 8

Description

The present invention relates to a substrate processing method and a substrate processing apparatus.

2. Description of the Related Art A single-wafer type substrate processing apparatus is known that processes a substrate by discharging a processing liquid onto the substrate. A single-wafer type substrate processing apparatus processes substrates one by one using a processing liquid. For example, Patent Document 1 discloses a single-wafer type substrate processing apparatus.

The substrate processing apparatus of Patent Document 1 includes an organic solvent valve that opens and closes an organic solvent pipe, and a hydrophobizing agent valve that opens and closes a hydrophobizing agent pipe. After a delay time has elapsed since the start of the closing operation of the organic solvent valve, the opening operation of the hydrophobizing agent valve is started while the discharge of IPA (isopropyl alcohol) from the organic solvent nozzle has not completely stopped. As a result, it is possible to change the process from treating a substrate with an organic solvent to using a hydrophobizing agent while suppressing or preventing the occurrence of liquid splashing caused by interference between the organic solvent and the hydrophobizing agent, and without causing the substrate to run out of liquid. It can be migrated.

Japanese Patent Application Publication No. 2019-192799

However, in the substrate processing apparatus of Patent Document 1, the period (delay time) from starting the closing operation of the organic solvent valve (preceding valve) to starting the opening operation of the hydrophobizing agent valve (following valve) is limited. , must be set by the operator. Therefore, for example, it is necessary to set a delay time every time the discharge flow rate of the processing liquid changes. The discharge flow rate of the processing liquid fluctuates due to, for example, fluctuations in the utility power of a factory in which the substrate processing apparatus is installed. Thus, in the substrate processing apparatus of Patent Document 1, it is necessary to set the delay time even after the substrate processing apparatus is installed. Therefore, if the burden on the worker is taken into account, there is room for further improvement.

The present invention has been made in view of the above problems, and an object thereof is to provide a substrate processing method and a substrate processing apparatus that can reduce the burden on workers.

According to one aspect of the present invention, a substrate processing method is a substrate processing method for processing a substrate with a processing liquid, comprising: holding the substrate; and starting supply of the preceding processing liquid to a preceding nozzle; a step of discharging the preceding processing liquid from the discharge port of the preceding nozzle toward the held substrate; and a step of starting supply of the subsequent processing liquid to the succeeding nozzle and discharging the preceding processing liquid toward the held substrate. a step of discharging the trailing treatment liquid from the discharge port of the trailing nozzle; a detection step of detecting a start of discharge of the trailing treatment liquid from the discharge port of the trailing nozzle; and a step of discharging the trailing treatment liquid. and a stopping step of stopping supply of the preceding treatment liquid to the preceding nozzle in response to detecting the start.

In one embodiment, in the detection step, it is detected that the trailing treatment liquid is discharged from the discharge port of the trailing nozzle.

In one embodiment, in the detection step, it is detected that the trailing treatment liquid has reached the discharge port of the trailing nozzle.

In one embodiment, in the detection step, it is detected that the trailing treatment liquid has reached the vicinity of the discharge port of the trailing nozzle.

In one embodiment, in the detection step, the start of ejection of the subsequent treatment liquid is detected by an imaging device.

In one embodiment, in the detection step, the start of ejection of the subsequent treatment liquid is detected by a photosensor.

In one embodiment, in the detection step, a capacitance sensor detects the start of ejection of the subsequent treatment liquid.

In one embodiment, in the stopping step, the supply of the preceding processing liquid to the preceding nozzle is stopped after a predetermined period of time has elapsed since the start of ejection of the subsequent processing liquid was detected.

In one embodiment, the substrate processing method includes: a supply time indicating a time interval from the start of supply of the preceding processing liquid to the stop of supply of the preceding processing liquid in the stopping step; and a time interval for supplying the preceding processing liquid. The method further includes the step of adjusting the supply start timing of the preceding treatment liquid based on the predetermined time.

In one embodiment, the substrate processing method further includes a step of obtaining timing for stopping supply of the preceding processing liquid.

In one embodiment, the substrate processing method further includes the step of detecting the start of ejection of the preceding processing liquid from the ejection port of the preceding nozzle.

According to one aspect of the present invention, a substrate processing apparatus is a substrate processing apparatus that processes a substrate with a processing liquid, and includes a substrate holder, a leading nozzle, a leading valve, a trailing nozzle, and a trailing valve. , a detection section, and a control section. The substrate holding section holds the substrate. The preceding nozzle has a discharge port, and discharges the preliminary processing liquid from the discharge port toward the substrate held by the substrate holding section. The preceding valve controls supply of the preceding processing liquid to the preceding nozzle and stopping supply of the preceding processing liquid to the preceding nozzle. The trailing nozzle has a discharge port, and discharges the trailing processing liquid from the discharge port toward the substrate held by the substrate holder. The trailing valve controls supply of the trailing treatment liquid to the trailing nozzle and stopping supply of the trailing treatment liquid to the trailing nozzle. The detection unit detects the start of ejection of the subsequent processing liquid from the ejection port of the subsequent nozzle. The control unit controls the preceding valve to start supplying the preceding processing liquid to the preceding nozzle, and then controls the succeeding valve to supply the subsequent processing liquid to the succeeding nozzle. start. The control unit executes a closing operation control process of controlling the preceding valve to stop supplying the preceding processing liquid in response to the detection unit detecting the start of discharge of the subsequent processing liquid.

In one embodiment, the detection unit detects that the trailing treatment liquid is discharged from the discharge port of the trailing nozzle.

In one embodiment, the detection unit detects that the trailing treatment liquid has reached the discharge port of the trailing nozzle.

In one embodiment, the detection unit detects that the trailing treatment liquid has reached the vicinity of the discharge port of the trailing nozzle.

In one embodiment, the detection unit includes an imaging device that detects the start of ejection of the subsequent processing liquid.

In one embodiment, the detection unit includes a photosensor that detects the start of ejection of the subsequent processing liquid.

In one embodiment, the detection unit includes a capacitance sensor that detects the start of ejection of the subsequent treatment liquid.

In one embodiment, the control unit controls the preceding valve to stop supplying the preceding processing liquid after a predetermined period of time has elapsed since the detection unit detected the start of discharging the subsequent processing liquid.

In one embodiment, the control unit includes a supply time indicating a time interval from the start of supply of the preceding treatment liquid to a stop of supply of the preceding treatment liquid by the closing operation control process, and a time period for supplying the preceding treatment liquid. The supply start timing of the preceding treatment liquid is adjusted based on the predetermined time interval.

In one embodiment, the control unit obtains timing for stopping supply of the preceding treatment liquid.

In one embodiment, the detection unit detects the start of ejection of the preceding treatment liquid from the ejection port of the preceding nozzle.

In one embodiment, the substrate processing apparatus further includes a plurality of processing chambers. Each of the plurality of storage chambers accommodates the substrate holder, the leading nozzle, and the trailing nozzle. The control unit executes the closing operation control process for each of the processing chambers.

According to the substrate processing method and substrate processing apparatus according to the present invention, it is possible to reduce the burden on the operator.

1 is a schematic diagram of a substrate processing apparatus according to Embodiment 1 of the present invention. 1 is a plan view schematically showing the configuration of a processing section included in a substrate processing apparatus according to Embodiment 1 of the present invention. 1 is a diagram schematically showing the configuration of a substrate processing apparatus according to Embodiment 1 of the present invention. FIG. 3 is a diagram showing an imaging range of an imaging device included in the substrate processing apparatus according to Embodiment 1 of the present invention. It is a figure which shows the captured image at the time of the 1st chemical|medical solution being discharged from the 1st discharge port. It is a figure which shows the captured image when discharge of the 1st rinse liquid is started from the 2nd discharge port. 1 is a flowchart showing a substrate processing method according to Embodiment 1 of the present invention. 3 is a flowchart showing the flow of substrate processing. 3 is a flowchart showing the flow of substrate processing. 3 is a flowchart showing the flow of substrate processing. 3 is a flowchart showing the flow of substrate processing. 5 is a timing chart showing opening/closing operations of the first to fourth valves and detection operations by the imaging device. FIG. 2 is a block diagram showing part of the configuration of a substrate processing apparatus according to Embodiment 2 of the present invention. 3 is a flowchart showing a substrate processing method according to Embodiment 2 of the present invention. 3 is a flowchart showing the flow of substrate processing. FIG. 3 is a block diagram showing part of the configuration of a substrate processing apparatus according to Embodiment 3 of the present invention. FIG. 3 is a diagram showing an input screen displayed on the display unit. 3 is a flowchart showing the flow of substrate processing. 3 is a flowchart showing the flow of substrate processing. 5 is a timing chart showing opening/closing operations of the first to fourth valves and detection operations by the imaging device. 3 is a flowchart showing the flow of substrate processing. It is a timing chart showing the opening/closing operations of the first valve and the second valve, and the detection operation by the imaging device. FIG. 4 is a diagram showing a first modification of the substrate processing apparatus according to Embodiments 1 to 4 of the present invention. FIG. 7 is a diagram showing a second modified example of the substrate processing apparatus according to Embodiments 1 to 4 of the present invention. FIG. 7 is a diagram showing a third modification of the substrate processing apparatus according to Embodiments 1 to 4 of the present invention. FIG. 7 is a diagram showing a fourth modification of the substrate processing apparatus according to Embodiments 1 to 4 of the present invention. FIG. 7 is a diagram showing a fifth modification of the substrate processing apparatus according to Embodiments 1 to 4 of the present invention. FIG. 7 is a diagram showing a fifth modification of the substrate processing apparatus according to Embodiments 1 to 4 of the present invention.

Embodiments of the substrate processing method and substrate processing apparatus of the present invention will be described below with reference to the drawings (FIGS. 1 to 28). However, the present invention is not limited to the following embodiments, and can be implemented in various forms without departing from the spirit thereof. Note that the description may be omitted as appropriate for parts where the description overlaps. Further, in the figures, the same or corresponding parts are given the same reference numerals and the description will not be repeated.

The "substrates" to be processed in the substrate processing method and substrate processing apparatus according to the present invention include semiconductor wafers, photomask glass substrates, liquid crystal display glass substrates, plasma display glass substrates, and FEDs (Field Emission Displays). ), optical disk substrates, magnetic disk substrates, and magneto-optical disk substrates. In the following, embodiments of the present invention will be mainly described using as an example a case where a disk-shaped semiconductor wafer is the target of substrate processing, but the substrate processing method and substrate processing apparatus according to the present invention can be It is also applicable to other substrates. Furthermore, the shape of the substrate is not limited to a disk shape, and the substrate processing method and substrate processing apparatus according to the present invention can be applied to substrates of various shapes.

[Embodiment 1]
Embodiment 1 of the present invention will be described below with reference to FIGS. 1 to 12. First, a substrate processing apparatus 100 of this embodiment will be explained with reference to FIG. FIG. 1 is a schematic diagram of a substrate processing apparatus 100 of this embodiment. Specifically, FIG. 1 is a schematic plan view of the substrate processing apparatus 100. The substrate processing apparatus 100 processes a substrate W using a processing liquid. More specifically, the substrate processing apparatus 100 is a single-wafer type apparatus, and processes the substrates W one by one. Hereinafter, processing the substrate W may be referred to as "substrate processing".

As shown in FIG. 1, the substrate processing apparatus 100 includes a plurality of processing units 1, a fluid cabinet 100A, a plurality of fluid boxes 100B, a plurality of load ports LP, an indexer robot IR, a center robot CR, A control device 101 is provided.

Each of the load ports LP accommodates a plurality of stacked substrates W. For example, the load port LP accommodates a plurality of patterned wafers. A patterned wafer is a substrate (wafer) on whose surface a fine pattern consisting of grooves and laminated structures is formed. The stacked structure has a structure in which silicon nitride films and silicon oxide films are alternately stacked in the thickness direction of the stacked structure.

The indexer robot IR transports the substrate W between the load port LP and the center robot CR. The center robot CR transports the substrate W between the indexer robot IR and the processing section 1. Note that a mounting table (pass) on which the substrate W is temporarily placed is provided between the indexer robot IR and the center robot CR, and a mounting table (pass) is provided between the indexer robot IR and the center robot CR. It is also possible to adopt an apparatus configuration in which the substrate W is transferred indirectly.

The plurality of processing units 1 form a plurality of towers TW (four towers TW in FIG. 1). The plurality of towers TW are arranged so as to surround the center robot CR in a plan view. Each tower TW includes a plurality of processing units 1 (three processing units 1 in FIG. 1) stacked one above the other.

Fluid cabinet 100A accommodates processing liquid. Each fluid box 100B corresponds to one of the plurality of towers TW. The processing liquid in the fluid cabinet 100A is supplied to all processing units 1 included in the tower TW corresponding to the fluid box 100B via one of the fluid boxes 100B.

Each of the processing units 1 supplies a processing liquid to the upper surface of the substrate W. The processing liquid includes a chemical liquid and a rinsing liquid. In this embodiment, the chemical liquid includes a first chemical liquid and a second chemical liquid. Further, the rinsing liquid includes a first rinsing liquid and a second rinsing liquid.

The first chemical solution is, for example, DHF (diluted hydrofluoric acid). DHF is diluted hydrofluoric acid. The native oxide film is removed from the substrate W by DHF.

The second chemical solution is, for example, SC1. SC1 is a liquid mixture containing "NH ₄ OH", "H ₂ O ₂ ", and "H ₂ O". When SC1 is supplied to the upper surface of the substrate W, particles attached to the upper surface of the substrate W are removed. More specifically, SC1 is used for dissolving and removing organic matter and peeling and removing insoluble particles.

The rinsing liquid is, for example, ultrapure water, carbonated water, electrolyzed ionized water, hydrogen water, ozone water, ammonia water, or diluted hydrochloric acid water (for example, hydrochloric acid water with a concentration of about 10 ppm to 100 ppm). Ultrapure water is, for example, deionized water. In this embodiment, the first rinsing liquid and the second rinsing liquid are the same type of rinsing liquid.

The processing unit 1 applies a first chemical solution, a second chemical solution, a first rinsing solution, and a second rinsing solution to the substrate in the order of the first chemical solution, the first rinsing solution, the second rinsing solution, the second chemical solution, and the second rinsing solution. Supply to W. For example, the processing unit 1 processes DHF, SC1, a first rinse liquid (deionized water), and a second rinse liquid (deionized water) from DHF, a first rinse liquid (deionized water), and a second rinse liquid (deionized water). (deionized water), SC1, and the second rinse liquid (deionized water) may be supplied to the substrate W in this order.

Next, the control device 101 will be explained. The control device 101 controls the operation of each part of the substrate processing apparatus 100. For example, the control device 101 controls the load port LP, indexer robot IR, and center robot CR. Control device 101 includes a control section 102 and a storage section 103.

The control section 102 controls the operation of each section of the substrate processing apparatus 100 based on various information stored in the storage section 103. The control unit 102 includes, for example, a processor. The control unit 102 may include a CPU (Central Processing Unit) or an MPU (Micro Processing Unit) as a processor. Alternatively, the control unit 102 may include a general-purpose computing device or a dedicated computing device.

The storage unit 103 stores various information for controlling the operation of the substrate processing apparatus 100. For example, the storage unit 103 stores data and computer programs. Various information (data) includes recipe data. The recipe data indicates a recipe that defines processing contents and processing procedures for the substrate W. Conditions (setting values) for executing substrate processing are set in the recipe.

Storage unit 103 has a main storage device. The main storage device is, for example, a semiconductor memory. The storage unit 103 may further include an auxiliary storage device. The auxiliary storage device includes, for example, at least one of a semiconductor memory and a hard disk drive. Storage unit 103 may include removable media.

Next, the substrate processing apparatus 100 of this embodiment will be further described with reference to FIGS. 1 and 2. FIG. 2 is a plan view schematically showing the configuration of the processing section 1 included in the substrate processing apparatus 100 of this embodiment.

As shown in FIG. 2, the processing section 1 includes a processing chamber 2, a substrate holding section 3, a first nozzle 41 to a fourth nozzle 44, a first nozzle moving mechanism 5, a second nozzle moving mechanism 6, It has a liquid receiver 9, an imaging device 110, and a lighting device 111. The substrate holding section 3, the first nozzle 41 to the fourth nozzle 44, the first nozzle moving mechanism 5, the second nozzle moving mechanism 6, the liquid receiving section 9, the imaging device 110, and the lighting device 111 are provided for each processing chamber 2. It will be done. Note that the imaging device 110 is an example of a "detection unit".

The substrate W is carried into the processing chamber 2 and processed therein. The processing chamber 2 has a substantially box shape. The processing chamber 2 includes a substrate holding section 3, a first nozzle 41 to a fourth nozzle 44, a part of the first nozzle moving mechanism 5, a part of the second nozzle moving mechanism 6, and a liquid receiving part 9. accommodate. The processing chamber 2 is, for example, a chamber.

The substrate holding section 3 holds the substrate W. The operation of the substrate holding section 3 is controlled by a control device 101 (control section 102). More specifically, the substrate holder 3 holds the substrate W in a horizontal position. The substrate holder 3 is, for example, a spin chuck. The substrate holder 3 may include a spin base 31 and a plurality of chuck members 32 (four chuck members 32 in FIG. 2).

The spin base 31 has a substantially disk shape and supports a plurality of chuck members 32 in a horizontal position. The plurality of chuck members 32 are arranged at the periphery of the spin base 31. The plurality of chuck members 32 clamp the peripheral edge of the substrate W. The plurality of chuck members 32 hold the substrate W in a horizontal position. The operation of the plurality of chuck members 32 is controlled by the control device 101 (control unit 102). The plurality of chuck members 32 are arranged so that the center of the substrate W coincides with the center CP1 of the spin base 31.

Note that, as will be described later with reference to FIG. 3, the spin base 31 rotates around the center CP1 of the spin base 31. Therefore, the substrate W rotates with the center of the substrate W as the rotation center.

Next, the first nozzle 41, the second nozzle 42, and the first nozzle moving mechanism 5 will be explained.

The first nozzle 41 discharges a first chemical solution (for example, DHF) toward the upper surface of the substrate W held by the substrate holder 3 . As a result, the first chemical liquid is supplied to the substrate W, and a liquid film of the first chemical liquid is formed on the upper surface of the substrate W. Specifically, the first chemical liquid is discharged from the tip of the first nozzle 41. Further, the first chemical liquid is discharged from the first nozzle 41 toward the rotating substrate W.

The second nozzle 42 discharges the first rinsing liquid (for example, deionized water) toward the upper surface of the substrate W held by the substrate holder 3 . As a result, the first rinsing liquid is supplied to the substrate W, and a liquid film of the first rinsing liquid is formed on the upper surface of the substrate W. Specifically, the first rinse liquid is discharged from the tip of the second nozzle 42. Further, the first rinsing liquid is discharged from the second nozzle 42 toward the rotating substrate W.

The first nozzle moving mechanism 5 moves the first nozzle 41 and the second nozzle 42 simultaneously. The operation of the first nozzle moving mechanism 5 is controlled by a control device 101 (control unit 102). More specifically, the first nozzle moving mechanism 5 moves the first nozzle 41 and the second nozzle 42 between the first retreat area and the processing position. The first evacuation area is an area outside the substrate holding section 3. More specifically, the first retraction area is an area outside the liquid receiving part 9. FIG. 2 shows the first nozzle 41 and the second nozzle 42 located in the first retraction area. In this embodiment, the processing positions of the first nozzle 41 and the second nozzle 42 are both positions facing the center of the substrate W. Both the first nozzle 41 and the second nozzle 42 discharge the processing liquid toward the substrate W from above the substrate W.

The first nozzle moving mechanism 5 may include a first nozzle arm 51 , a second nozzle arm 52 , a first nozzle base 53 , and a first nozzle moving section 54 . The first nozzle base 53 extends in the vertical direction. Base end portions of the first nozzle arm 51 and the second nozzle arm 52 are coupled to a first nozzle base 53. The first nozzle arm 51 and the second nozzle arm 52 extend horizontally from the first nozzle base 53. In this embodiment, the first nozzle arm 51 and the second nozzle arm 52 are arranged adjacent to each other in a horizontal plane and extend parallel to each other.

The first nozzle arm 51 supports the first nozzle 41. The first nozzle 41 projects vertically downward from the first nozzle arm 51. Similarly, second nozzle arm 52 supports second nozzle 42 . The second nozzle 42 projects vertically downward from the second nozzle arm 52. The first nozzle 41 may be arranged at the tip of the first nozzle arm 51. Similarly, the second nozzle 42 may be arranged at the tip of the second nozzle arm 52.

The first nozzle moving unit 54 rotates the first nozzle base 53 about the center CP2 of the first nozzle base 53 as a rotation center. As a result, the first nozzle arm 51 and the second nozzle arm 52 rotate around the center CP2 of the first nozzle base 53, and the first nozzle 41 and the second nozzle 42 rotate around the center CP2 of the first nozzle base 53. It moves along the circumferential direction around . The first nozzle moving unit 54 is controlled by a control device 101 (control unit 102). The first nozzle moving unit 54 includes, for example, a stepping motor. Alternatively, the first nozzle moving section 54 may include a motor and a speed reducer.

Here, the operation of the first nozzle moving mechanism 5 will be explained. The first nozzle moving mechanism 5 first moves the first nozzle 41 to the processing position. At this time, the second nozzle 42 moves in synchronization with the first nozzle 41. More specifically, the second nozzle 42 moves to the standby position. Here, the standby position is a position adjacent to the processing position in the horizontal plane. Therefore, the standby position is a position above the substrate W.

The first nozzle 41 supplies the first chemical liquid to the substrate W from the processing position. After the first nozzle 41 stops supplying the first chemical, the first nozzle moving mechanism 5 moves the second nozzle 42 from the standby position to the processing position. At this time, the first nozzle 41 moves in synchronization with the second nozzle 42. The second nozzle 42 mainly supplies the first rinsing liquid to the substrate W from the processing position. In this embodiment, the second nozzle 42 starts discharging the first rinse liquid when it is located at the standby position. Therefore, the second nozzle 42 supplies the first rinsing liquid to the substrate W even while moving from the standby position to the processing position.

Next, the third nozzle 43, the fourth nozzle 44, and the second nozzle moving mechanism 6 will be explained.

The third nozzle 43 is a fixed nozzle, and discharges the second rinsing liquid (for example, deionized water) from a fixed position toward the upper surface of the substrate W held by the substrate holding part 3. As a result, the second rinsing liquid is supplied to the substrate W. Specifically, the second rinsing liquid is discharged from the tip of the third nozzle 43. Further, the third nozzle 43 is disposed outside the liquid receiving part 9 and discharges the second rinsing liquid from the outside of the liquid receiving part 9 toward the center of the rotating substrate W.

The fourth nozzle 44 discharges the second chemical solution (for example, SC1) toward the upper surface of the substrate W held by the substrate holding part 3. As a result, the second chemical solution is supplied to the substrate W. Specifically, the second chemical liquid is discharged from the tip of the fourth nozzle 44. Further, the second chemical liquid is discharged from the fourth nozzle 44 toward the rotating substrate W.

The second nozzle moving mechanism 6 moves the fourth nozzle 44 between the second retreat area and the processing position. The operation of the second nozzle moving mechanism 6 is controlled by a control device 101 (control unit 102). The second evacuation area is an area outside the liquid receiving part 9, similar to the first evacuation area. FIG. 2 shows the fourth nozzle 44 located in the second retraction area. The processing position of the fourth nozzle 44 is a position facing the center of the substrate W, similar to the processing positions of the first nozzle 41 and the second nozzle 42.

The second nozzle moving mechanism 6 may include a third nozzle arm 61, a second nozzle base 62, and a second nozzle moving section 63. The second nozzle base 62 extends in the vertical direction. A base end portion of the third nozzle arm 61 is coupled to a second nozzle base 62 . The third nozzle arm 61 extends horizontally from the second nozzle base 62.

The third nozzle arm 61 supports the fourth nozzle 44. The fourth nozzle 44 projects vertically downward from the third nozzle arm 61. The fourth nozzle 44 may be arranged at the tip of the third nozzle arm 61.

The second nozzle moving unit 63 rotates the second nozzle base 62 about the center CP3 of the second nozzle base 62 as a rotation center. As a result, the third nozzle arm 61 rotates around the center CP3 of the second nozzle base 62, and the fourth nozzle 44 moves along the circumferential direction around the center CP3 of the second nozzle base 62. . The second nozzle moving unit 63 is controlled by the control device 101 (control unit 102). The second nozzle moving unit 63 includes, for example, a stepping motor. Alternatively, the second nozzle moving section 63 may include a motor and a speed reducer.

The second nozzle moving mechanism 6 moves the fourth nozzle 44 to the second rinsing area after the second nozzle 42 stops supplying the first rinsing liquid and the first nozzle 41 and the second nozzle 42 move to the first evacuation area. Move from the evacuation area to the processing position. The fourth nozzle 44 supplies the second chemical to the substrate W from the processing position.

Next, the liquid receiving part 9 will be explained. The liquid receiving part 9 surrounds the substrate holding part 3 and receives the processing liquid discharged from the substrate W. The liquid receiving portion 9 is, for example, a cup or a guard.

Next, the imaging device 110 will be explained. The imaging device 110 includes, for example, an imaging element, an electronic shutter, and an optical system. The image sensor may be, for example, a CCD (Charge Coupled Device). The optical system includes, for example, a lens. The imaging device 110 images the inside of the processing chamber 2 and generates a captured image SG. The imaging device 110 outputs the captured image SG to the control device 101. Specifically, the imaging device 110 outputs the captured image SG to the control unit 102. The operation of the imaging device 110 is controlled by the control device 101 (control unit 102).

In this embodiment, the imaging device 110 is placed outside the processing chamber 2 . The processing chamber 2 has a side wall 2a facing the imaging device 110, and the side wall 2a is provided with a window portion facing the imaging device 110. The imaging device 110 images the inside of the processing chamber 2 through the window of the side wall 2a. The window portion transmits light. For example, the window portion transmits visible light.

The imaging device 110 images the inside of the processing chamber 2 and detects the start of ejection of the first rinsing liquid by the second nozzle 42 . Similarly, the imaging device 110 images the inside of the processing chamber 2 and detects when the third nozzle 43 starts discharging the second rinse liquid and when the fourth nozzle 44 starts discharging the second chemical solution. In this embodiment, the imaging device 110 images the inside of the processing chamber 2 and detects that the first rinsing liquid is discharged from the tip of the second nozzle 42 . Similarly, the imaging device 110 images the inside of the processing chamber 2 and detects that the second rinsing liquid is discharged from the tip of the third nozzle 43. Further, the imaging device 110 images the inside of the processing chamber 2 and detects that the second chemical liquid is discharged from the tip of the fourth nozzle 44 .

The control device 101 (control unit 102) obtains the timing at which the second nozzle 42 starts discharging the first rinse liquid based on the captured image SG input from the imaging device 110. Similarly, the control device 101 (control unit 102) controls the timing at which the third nozzle 43 starts discharging the second rinsing liquid and the second chemical liquid from the fourth nozzle 44 based on the captured image SG input from the imaging device 110. Obtain the discharge start timing. In this embodiment, the discharge start timing of the first rinsing liquid indicates the timing at which the first rinsing liquid is discharged from the tip of the second nozzle 42 . Similarly, the discharge start timing of the second rinsing liquid indicates the timing at which the second rinsing liquid is discharged from the tip of the third nozzle 43, and the discharge start timing of the second chemical liquid indicates the timing at which the second rinse liquid is discharged from the tip of the fourth nozzle 44. Indicates the timing of ejection from the tip.

Next, the lighting device 111 will be explained. The lighting device 111 irradiates light into the processing chamber 2 . The operation of the lighting device 111 is controlled by the control device 101 (control unit 102). By irradiating light into the processing chamber 2, it becomes easy to detect the start of discharging the first rinsing liquid, the start of discharging the second rinsing liquid, and the start of discharging the second chemical solution. The illumination device 111 emits light during substrate processing. For example, the illumination device 111 may emit light only when the imaging device 110 performs an imaging operation.

Specifically, the imaging device 110 images the inside of the processing chamber 2 at a predetermined frame rate (for example, 60 frames/second). As a result, each frame of the captured image SG is sequentially input to the control unit 102. The pixel value of each frame changes depending on the change in brightness value. The brightness value changes depending on whether the processing liquid is shown in the captured image SG. The control unit 102 acquires the ejection start timing of the first rinsing liquid, the ejection start timing of the second rinsing liquid, and the ejection start timing of the second chemical liquid based on the pixel values of each frame of the captured image SG. According to this embodiment, by irradiating light into the processing chamber 2, the amount of change in the brightness value, which changes depending on whether or not the processing liquid is shown in the captured image SG, increases. Therefore, by irradiating light into the processing chamber 2, it becomes easy to detect the start of ejection of the first rinse liquid, the start of ejection of the second rinse liquid, and the start of ejection of the second chemical liquid.

Next, the substrate processing apparatus 100 of this embodiment will be described with reference to FIGS. 1 to 3. FIG. 3 is a diagram schematically showing the configuration of the substrate processing apparatus 100 of this embodiment. Specifically, FIG. 3 includes a cross section schematically showing the configuration of the processing section 1 included in the substrate processing apparatus 100. In addition, in FIG. 3, the fourth nozzle 44 and the second nozzle moving mechanism 6 are drawn above the first nozzle 41, the second nozzle 42, and the first nozzle moving mechanism 5 for easy understanding.

As shown in FIG. 3, the substrate processing apparatus 100 includes a substrate rotating section 7, a first liquid supply pipe 81 to a fourth liquid supply pipe 84, a first valve VA1 to a fourth valve VA4, and a first suckback valve SB1 to It further includes a fourth suckback valve SB4. The substrate rotation unit 7, the first liquid supply pipe 81 to the fourth liquid supply pipe 84, the first valve VA1 to the fourth valve VA4, and the first suckback valve SB1 to the fourth suckback valve SB4 are provided for each processing chamber 2. provided. Note that in this embodiment, the first valve VA1 to the fourth valve VA4 are on-off valves.

The processing chamber 2 further accommodates a portion of each of the substrate rotation unit 7 and the first to fourth liquid supply pipes 81 to 84. The first valve VA1 to the fourth valve VA4 and the first suckback valve SB1 to the fourth suckback valve SB4 are arranged outside the processing chamber 2. Specifically, the first valve VA1 to the fourth valve VA4 and the first suckback valve SB1 to the fourth suckback valve SB4 are housed in the fluid box 100B described with reference to FIG. 1.

The substrate rotating section 7 rotates the substrate W and the substrate holding section 3 together about the first rotation axis AX1. The operation of the substrate rotating section 7 is controlled by a control device 101 (control section 102). The first rotation axis AX1 extends in the vertical direction and passes through the center CP1 of the spin base 31 shown in FIG.

Specifically, the substrate rotation unit 7 rotates the spin base 31 about the first rotation axis AX1. Therefore, the spin base 31 rotates around the first rotation axis AX1. As a result, the substrate W held by the substrate holder 3 rotates about the first rotation axis AX1.

The substrate rotation unit 7 includes, for example, a motor main body 71 and a shaft 72. Shaft 72 is coupled to spin base 31 . Motor body 71 rotates shaft 72 . As a result, the spin base 31 rotates. The operation of the motor body 71 is controlled by a control device 101 (control unit 102).

Next, the first nozzle moving mechanism 5 will be explained. The first nozzle moving unit 54 described with reference to FIG. 2 rotates the first nozzle base 53 about the second rotation axis AX2. As a result, the first nozzle 41 and the second nozzle 42 move around the first nozzle base 53 along the circumferential direction centered on the second rotation axis AX2. The second rotation axis AX2 extends in the vertical direction and passes through the center CP2 of the first nozzle base 53 shown in FIG.

Next, the second nozzle moving mechanism 6 will be explained. The second nozzle moving unit 63 described with reference to FIG. 2 rotates the second nozzle base 62 about the third rotation axis AX3. As a result, the fourth nozzle 44 moves around the second nozzle base 62 along the circumferential direction centered on the third rotation axis AX3. The third rotation axis AX3 extends in the vertical direction and passes through the center CP3 of the second nozzle base 62 shown in FIG.

Next, the first nozzle 41 to fourth nozzle 44, first liquid supply pipe 81 to fourth liquid supply pipe 84, and first valve VA1 to fourth valve VA4 will be explained.

The first liquid supply pipe 81 is connected to the first nozzle 41 . The first liquid supply pipe 81 is a tubular member and supplies the first chemical liquid to the first nozzle 41 . As shown in FIG. 3, the first nozzle 41 has a first discharge port 41a. The first discharge port 41a is formed at the tip of the first nozzle 41. The first chemical liquid supplied from the first liquid supply pipe 81 to the first nozzle 41 is discharged from the first discharge port 41a.

The first valve VA1 is provided in the first liquid supply pipe 81. The first valve VA1 controls the supply of the first chemical liquid to the first nozzle 41 and the stoppage of the supply of the first chemical liquid to the first nozzle 41.

Specifically, the first valve VA1 is switchable between an open state and a closed state. The control device 101 (control unit 102) controls the opening/closing operation of the first valve VA1. When the first valve VA1 is in the open state, the first chemical liquid flows to the first nozzle 41 via the first liquid supply pipe 81. As a result, the first chemical liquid is discharged from the first discharge port 41a. On the other hand, when the first valve VA1 is in the closed state, the flow of the first chemical liquid via the first liquid supply pipe 81 is stopped.

The second liquid supply pipe 82 is connected to the second nozzle 42 . The second liquid supply pipe 82 is a tubular member and supplies the first rinsing liquid to the second nozzle 42 . As shown in FIG. 3, the second nozzle 42 has a second discharge port 42a. The second discharge port 42a is formed at the tip of the second nozzle 42. The first rinsing liquid supplied from the second liquid supply pipe 82 to the second nozzle 42 is discharged from the second discharge port 42a. Note that the distance between the centers of the first discharge port 41a and the second discharge port 42a is, for example, 20 mm.

The second valve VA2 is provided in the second liquid supply pipe 82. The second valve VA2 controls supply of the first rinsing liquid to the second nozzle 42 and stopping the supply of the first rinsing liquid to the second nozzle 42. The configuration of the second valve VA2 is similar to that of the first valve VA1, so a detailed description thereof will be omitted.

The third liquid supply pipe 83 is connected to the third nozzle 43. The third liquid supply pipe 83 is a tubular member and supplies the second rinsing liquid to the third nozzle 43. As shown in FIG. 3, the third nozzle 43 has a third discharge port 43a. The third discharge port 43a is formed at the tip of the third nozzle 43. The second rinsing liquid supplied from the third liquid supply pipe 83 to the third nozzle 43 is discharged from the third discharge port 43a.

The third valve VA3 is provided in the third liquid supply pipe 83. The third valve VA3 controls supply of the second rinsing liquid to the third nozzle 43 and stopping the supply of the second rinsing liquid to the third nozzle 43. The configuration of the third valve VA3 is similar to that of the first valve VA1, so a detailed description thereof will be omitted.

The fourth liquid supply pipe 84 is connected to the fourth nozzle 44 . The fourth liquid supply pipe 84 is a tubular member and supplies the second chemical liquid to the fourth nozzle 44 . As shown in FIG. 3, the fourth nozzle 44 has a fourth discharge port 44a. The fourth discharge port 44a is formed at the tip of the fourth nozzle 44. The second chemical liquid supplied from the fourth liquid supply pipe 84 to the fourth nozzle 44 is discharged from the fourth discharge port 44a.

The fourth valve VA4 is provided in the fourth liquid supply pipe 84. The fourth valve VA4 controls the supply of the second chemical liquid to the fourth nozzle 44 and the stoppage of the supply of the second chemical liquid to the fourth nozzle 44. The configuration of the fourth valve VA4 is similar to that of the first valve VA1, so a detailed description thereof will be omitted.

Next, the first suckback valve SB1 to the fourth suckback valve SB4 will be explained. The first suckback valve SB1 to the fourth suckback valve SB4 are provided in the first liquid supply pipe 81 to the fourth liquid supply pipe 84, respectively. Specifically, the first suckback valve SB1 to the fourth suckback valve SB4 are provided downstream of the first valve VA1 to the fourth valve VA4, respectively.

The first suckback valve SB1 sucks the first chemical liquid in the first liquid supply pipe 81 when the first nozzle 41 stops discharging the first chemical liquid, so that the first chemical liquid is sucked into the first liquid supply pipe 81 from the first discharge port 41a. Draw in the first chemical solution. As a result, when the discharge of the first chemical liquid is stopped, the first chemical liquid becomes a relatively large lump (droplet) and is difficult to fall from the first discharge port 41a. In other words, "drops" are less likely to occur. The operation of the first suckback valve SB1 is controlled by the control device 101 (control unit 102).

The configurations of the second suckback valve SB2 to fourth suckback valve SB4 are similar to the first suckback valve SB1, and therefore detailed description thereof will be omitted.

Next, the imaging range SH of the imaging device 110 will be explained with reference to FIGS. 1 to 4. FIG. 4 is a diagram showing the imaging range SH of the imaging device 110 included in the substrate processing apparatus 100 of this embodiment. In FIG. 4, for ease of understanding, among the components in the processing chamber 2, the first nozzle 41, the second nozzle 42, the third nozzle 43, a part of the first liquid supply pipe 81, Only a portion of the second liquid supply pipe 82 and the third liquid supply pipe 83 are shown.

As shown in FIG. 4, the imaging range SH of the imaging device 110 includes the tip (second ejection port 42a) of the second nozzle 42 located at the standby position and the second nozzle ejected from the tip (second ejection port 42a). This includes a range where the first rinse liquid, the tip of the third nozzle 43 (third discharge port 43a), and the second rinse liquid discharged from the tip (third discharge port 43a) can be photographed. In this embodiment, the tip (first discharge port 41a) of the first nozzle 41 located at the processing position and the first chemical solution discharged from the tip (first discharge port 41a) are arranged in the imaging range SH of the imaging device 110. It further includes a range in which images can be taken. Therefore, the imaging device 110 can detect the start of ejection of the first rinsing liquid and the start of ejection of the second rinsing liquid.

The imaging device 110 images the imaging range SH to generate a captured image SG. The captured image SG is input to the control device 101 (control unit 102). Therefore, the control unit 102 can acquire the timing to start discharging the first rinsing liquid and the timing to start discharging the second rinsing liquid.

Note that when the first nozzle 41 and the second nozzle 42 are located in the first evacuation area described with reference to FIG. 2 and the fourth nozzle 44 is located in the processing position, the imaging range SH of the imaging device 110 includes This includes a range in which the tip of the fourth nozzle 44 located at the processing position (fourth discharge port 44a) and the second chemical liquid discharged from the tip (fourth discharge port 44a) can be photographed. Therefore, the imaging device 110 can detect the start of ejection of the second chemical liquid. Further, the control unit 102 can acquire the timing of starting ejection of the second chemical liquid.

Next, the processing executed by the control unit 102 will be described with reference to FIGS. 1 to 6. FIG. 5 is a diagram showing a captured image SG when the first chemical liquid is being discharged from the first discharge port 41a. FIG. 6 is a diagram showing a captured image SG when discharge of the first rinse liquid is started from the second discharge port 42a. 5 and 6, for ease of understanding, among the components in the processing chamber 2, the first nozzle 41, the second nozzle 42, a part of the first liquid supply pipe 81, and the first Only the two-liquid supply piping 82 is shown. Furthermore, in FIGS. 5 and 6, the first nozzle 41 and the second nozzle 42 are drawn apart from each other to facilitate understanding.

As shown in FIG. 5, when the first chemical liquid is being discharged from the first discharge port 41a, when the second valve VA2 described with reference to FIG. 3 is switched from the closed state to the open state, the second liquid is supplied. Supply of the first rinsing liquid from the pipe 82 to the second nozzle 42 is started. FIG. 5 shows a frame of the captured image SG at a stage before the first rinse liquid reaches the second discharge port 42a. FIG. 6 shows a frame of the captured image SG at a stage when the first rinse liquid has started to be discharged from the second discharge port 42a.

When the frame of the captured image SG is input, the control unit 102 cuts out an image processing area KA from the frame, and acquires the discharge start timing of the first rinse liquid based on the image of the image processing area KA. More specifically, the control unit 102 performs image processing on the image in the image processing area KA to obtain pixel values. Then, the control unit 102 acquires the timing at which the second nozzle 42 starts discharging the first rinse liquid based on the acquired pixel value.

In this embodiment, the image processing area KA includes a first image processing area KA1 extending from the tip of the second nozzle 42 (second ejection port 42a) in the ejection direction of the first rinse liquid. Since the first rinsing liquid is discharged vertically downward, the first image processing area KA1 has an elongated shape (for example, a rectangular shape) extending in the vertical direction of the captured image SG. The width of the first image processing area KA1 in the horizontal direction is set wider than the width of the first rinsing liquid, and the length of the first image processing area KA1 in the vertical direction is such that the first image processing area KA1 is set to be wider than the width of the first rinsing liquid. The length is set to a length that does not include the liquid position. The control unit 102 acquires the timing at which the first rinsing liquid is ejected from the second ejection port 42a based on the image of the first image processing area KA1.

Note that the image processing area KA is set for the third nozzle 43 in the same manner as for the second nozzle 42. Specifically, the image processing area KA includes a second image processing area extending from the tip of the third nozzle 43 (third ejection port 43a) in the ejection direction of the second rinse liquid. Therefore, the control unit 102 can detect the timing to start discharging the second rinsing liquid based on the image of the second image processing area.

Furthermore, when the first nozzle 41 and the second nozzle 42 are located in the first evacuation area described with reference to FIG. 2 and the fourth nozzle 44 is located in the processing position, the image processing area KA is The settings for the second nozzle 42 are also made in the same manner as for the second nozzle 42. Specifically, the image processing area KA includes a third image processing area extending from the tip of the fourth nozzle 44 (fourth ejection port 44a) in the ejection direction of the second chemical liquid. Therefore, the control unit 102 can detect the timing to start discharging the second chemical liquid based on the image of the third image processing area.

Next, the substrate processing method of this embodiment will be explained with reference to FIGS. 1 to 7. FIG. 7 is a flowchart showing the substrate processing method of this embodiment. The substrate processing method shown in FIG. 7 is executed by the substrate processing apparatus 100 described with reference to FIGS. 1 to 6. Therefore, FIG. 7 shows the operation of the substrate processing apparatus 100 of this embodiment.

The substrate processing method (operation of the substrate processing apparatus 100) shown in FIG. 7 starts in response to the substrate W being carried into the processing chamber 2 by the central robot CR. As shown in FIG. 7, when the substrate W is carried into the processing chamber 2 by the central robot CR, the substrate holding section 3 holds the substrate W (step S1).

When the substrate holding unit 3 holds the substrate W, the imaging device 110 starts imaging (step S2).

When the imaging device 110 starts imaging, the substrate rotating section 7 rotates the substrate holding section 3. As a result, the substrate W rotates (step S3).

After the rotation of the substrate W starts, the substrate W is processed with the processing liquid (step S4). In this embodiment, the first chemical solution (e.g., DHF), the second chemical solution (e.g., SC1), the first rinse solution (e.g., deionized water), and the second rinse solution (e.g., deionized water) are The substrate W is processed by supplying the first chemical solution, the first rinsing liquid, the second rinsing liquid, the second chemical liquid, and the second rinsing liquid to the substrate W in this order. The substrate rotation unit 7 stops the rotation of the substrate W at the end of substrate processing.

After performing the substrate processing, the imaging device 110 ends imaging (step S5).

After the imaging device 110 finishes capturing the image, the substrate holder 3 releases the substrate W from being held. Then, the central robot CR carries out the substrate W to the outside of the processing chamber 2 (step S6), and the substrate processing method (operation of the substrate processing apparatus 100) shown in FIG. 7 ends.

Next, the substrate processing method (operation of the substrate processing apparatus 100) of this embodiment will be described with reference to FIGS. 1 to 11. 8 to 11 are flowcharts showing the flow of substrate processing (step S4 shown in FIG. 7).

As shown in FIG. 8, when substrate processing is started, first, the first nozzle moving mechanism 5 moves the first nozzle 41 from the first retreat area to the processing position (step S11). At this time, the second nozzle 42 moves from the first retraction area to the standby position in synchronization with the first nozzle 41.

When the first nozzle 41 moves to the processing position, the control device 101 (control unit 102) controls the first valve VA1 (preceding valve) to supply the first chemical solution (preceding treatment liquid) to the first nozzle 41 (preceding nozzle). ) is started (step S12). Specifically, the control device 101 (control unit 102) transmits an open signal to the first valve VA1. The first valve VA1 switches from the closed state to the open state in response to receiving the open signal. As a result, supply of the first chemical liquid to the first nozzle 41 is started.

When the supply of the first chemical liquid (preceding treatment liquid) to the first nozzle 41 (preceding nozzle) is started, the first chemical liquid (preceding treatment liquid) is discharged from the first discharge port 41a (discharge port of the preceding nozzle). Then, the first chemical solution (preceding treatment solution) is supplied to the substrate W.

Note that a delay time occurs between when the supply of the first chemical liquid to the first nozzle 41 is started and until the first chemical liquid is discharged from the first discharge port 41a. Specifically, when the first chemical liquid is ejected for the first time, a delay time corresponding to the time necessary for the first chemical liquid to reach the first nozzle 41 from the first valve VA1 occurs. During the second and subsequent ejections of the first chemical solution, a delay time occurs due to the suckback process. Specifically, when the supply of the first chemical liquid is stopped, the first chemical liquid is sucked back by the first suckback valve SB1. Therefore, the first chemical liquid is drawn into the first liquid supply pipe 81 at the time of starting the supply of the first chemical liquid. As a result, a delay time occurs from the time when the first valve VA1 is opened and the first chemical liquid begins to flow until the first chemical liquid is discharged from the first discharge port 41a.

When the control device 101 (control unit 102) starts supplying the first chemical solution, it determines whether the first predetermined time T1 has elapsed (step S13). Specifically, the control unit 102 starts measuring time in response to transmitting an open signal to the first valve VA1. The first predetermined time T1 indicates a predetermined value as a time interval for supplying the first chemical liquid to the first nozzle 41, and is stored in the storage unit 103. The control unit 102 determines whether the time measurement result has reached the first predetermined time T1. The upper surface of the substrate W is covered with a liquid film of the first chemical solution while the first predetermined time T1 has elapsed.

If the control device 101 (control unit 102) determines that the first predetermined time T1 has not elapsed (No in step S13), it repeats the process in step S13. When the control device 101 (control unit 102) determines that the first predetermined time T1 has elapsed (Yes in step S13), the control device 101 (control unit 102) controls the second valve VA2 (trailing valve) to close the second nozzle 42 (trailing valve). The supply of the first rinsing liquid (subsequent processing liquid) to the nozzle is started (step S14). Specifically, the control device 101 (control unit 102) transmits an open signal to the second valve VA2. The second valve VA2 switches from the closed state to the open state in response to receiving the open signal. As a result, supply of the first rinsing liquid to the second nozzle 42 is started.

Similar to the first chemical solution, a first delay time DT1 occurs between when the supply of the first rinse liquid to the second nozzle 42 is started and when the first rinse liquid is discharged from the second discharge port 42a. do.

After starting the supply of the first rinsing liquid (following treatment liquid) to the second nozzle 42 (following nozzle), the control device 101 (control unit 102) starts supplying the first rinsing liquid (following treatment liquid) to the second nozzle 42 (following nozzle), and then supplies the second discharge port 42a (following nozzle discharge port) to the second nozzle 42 (following nozzle). ) is detected (step S15).

Specifically, the control device 101 (control unit 102) determines whether or not the start of ejection of the first rinse liquid from the second ejection port 42a is detected based on the captured image SG input from the imaging device 110. judge. Specifically, the control device 101 (control unit 102) extracts the first image processing area KA1 (see FIGS. 5 and 6) from each frame of the captured image. Then, the control device 101 (control unit 102) performs image processing on each first image processing area KA1, and determines whether or not the start of ejection of the first rinse liquid from the second ejection port 42a is detected.

If the control device 101 (control unit 102) determines that the start of discharging the first rinse liquid from the second discharge port 42a has not been detected (No in step S15), it repeats the process in step S15. When the control device 101 (control unit 102) determines that the start of discharging the first rinsing liquid (trailing processing liquid) from the second discharge port 42a (discharging port of the trailing nozzle) is detected (Yes in step S15), ), a closing operation control process is executed to control the first valve VA1 (preceding valve) to stop the supply of the first chemical liquid (preceding treatment liquid) to the first nozzle 41 (preceding nozzle) (step S16). In this embodiment, the control device 101 (control unit 102) stops the supply of the first chemical liquid at the timing when the first rinse liquid is discharged from the second discharge port 42a.

Specifically, the control device 101 (control unit 102) transmits a close signal to the first valve VA1. The first valve VA1 switches from the open state to the closed state in response to receiving the close signal. As a result, the supply of the first chemical liquid to the first nozzle 41 is stopped.

Furthermore, in this embodiment, the control device 101 (control unit 102) transmits a suction signal to the first suckback valve SB1. The first suckback valve SB1 executes a suction operation based on the suction signal and sucks the first chemical liquid in the first liquid supply pipe 81 (suckback process). The closing operation of the first valve VA1 and the suction operation of the first suckback valve SB1 are executed in parallel with each other. As a result, the first chemical liquid on the tip side of the first nozzle 41 is pulled back, and the discharge of the first chemical liquid is stopped.

As shown in FIG. 9, after stopping the supply of the first chemical, the first nozzle moving mechanism 5 moves the second nozzle 42 from the standby position to the processing position (step S21). Note that when the second nozzle 42 (preceding nozzle) is located at the standby position, the first rinsing liquid (preceding treatment liquid) starts to be discharged from the second discharge port 42a (discharge port of the preceding nozzle). There is. Therefore, the second nozzle 42 (preceding nozzle) supplies the first rinsing liquid (preceding treatment liquid) to the substrate W while moving from the standby position to the processing position. After moving to the processing position, the second nozzle 42 (preceding nozzle) supplies the first rinsing liquid (preceding treatment liquid) to the substrate W from the processing position.

After the second nozzle 42 moves to the processing position, the control device 101 (control unit 102) determines whether the second predetermined time T2 has elapsed (step S22). Specifically, the control unit 102 starts measuring time in response to transmitting an open signal to the second valve VA2 (preceding valve). The second predetermined time T2 indicates a predetermined value as a time interval for supplying the first rinse liquid to the second nozzle 42, and is stored in the storage unit 103. The control unit 102 determines whether the time measurement result has reached the second predetermined time T2. The upper surface of the substrate W is covered with a liquid film of the first rinsing liquid while the second predetermined time T2 has elapsed. In other words, the liquid film covering the upper surface of the substrate W is replaced from the first chemical liquid film to the first rinsing liquid film.

If the control device 101 (control unit 102) determines that the second predetermined time T2 has not elapsed (No in step S22), it repeats the process in step S22. When the control device 101 (control unit 102) determines that the second predetermined time T2 has elapsed (Yes in step S22), the control device 101 (control unit 102) controls the third valve VA3 (trailing valve) to close the third nozzle 43 (trailing valve). The supply of the second rinsing liquid (subsequent processing liquid) to the nozzle is started (step S23). Specifically, the control device 101 (control unit 102) transmits an open signal to the third valve VA3. The third valve VA3 switches from the closed state to the open state in response to receiving the open signal. As a result, supply of the second rinsing liquid to the third nozzle 43 is started.

Similar to the first chemical solution, a second delay time DT2 occurs between when the supply of the second rinsing liquid to the third nozzle 43 is started and until the second rinsing liquid is discharged from the third discharge port 43a. do.

After starting the supply of the second rinsing liquid (following treatment liquid) to the third nozzle 43 (following nozzle), the control device 101 (control unit 102) starts supplying the second rinsing liquid (following treatment liquid) to the third nozzle 43 (following nozzle), and then supplies the second rinsing liquid (following treatment liquid) to the third discharge port in the same manner as the first rinsing liquid. It is determined whether or not the start of discharging the second rinsing liquid (trailing processing liquid) from 43a (discharging port of the trailing nozzle) is detected (step S24).

If the control device 101 (control unit 102) determines that the start of discharging the second rinse liquid from the third discharge port 43a has not been detected (No in step S24), it repeats the process in step S24. When the control device 101 (control unit 102) determines that the start of discharging the second rinsing liquid (trailing processing liquid) from the third discharge port 43a (discharging port of the trailing nozzle) is detected (Yes in step S24), ), a closing operation control process is executed to control the second valve VA2 (preceding valve) to stop the supply of the first rinsing liquid (preceding treatment liquid) to the second nozzle 42 (preceding nozzle) (step S25). In this embodiment, the control device 101 (control unit 102) stops the supply of the first rinse liquid at the timing when the second rinse liquid is discharged from the third discharge port 43a.

Specifically, the control device 101 (control unit 102) transmits a close signal to the second valve VA2. The second valve VA2 switches from the open state to the closed state in response to receiving the close signal. As a result, the supply of the first rinse liquid to the second nozzle 42 is stopped.

Furthermore, in this embodiment, the control device 101 (control unit 102) transmits a suction signal to the second suckback valve SB2. The second suckback valve SB2 executes a suction operation based on the suction signal and sucks the first rinsing liquid in the second liquid supply pipe 82 (suckback process). The closing operation of the second valve VA2 and the suction operation of the second suckback valve SB2 are executed in parallel with each other. As a result, the first rinsing liquid on the tip side of the second nozzle 42 is pulled back, and the discharge of the first rinsing liquid is stopped.

After stopping the supply of the first rinsing liquid, the first nozzle moving mechanism 5 moves the first nozzle 41 and the second nozzle 42 to the first retreat area (step S26). Note that the second rinsing liquid starts to be discharged before the first rinsing liquid stops being discharged. Therefore, while the first nozzle 41 and the second nozzle 42 are moving to the first evacuation area, the second rinsing liquid (preceding treatment liquid) is supplied to the upper surface of the substrate W from the third nozzle 43 (preceding nozzle). Ru.

As shown in FIG. 10, after the first nozzle 41 and the second nozzle 42 have moved to the first retraction area, the second nozzle moving mechanism 6 starts moving the fourth nozzle 44 (step S31).

When the movement of the fourth nozzle 44 starts, the control device 101 (control unit 102) determines whether or not the third predetermined time T3 has elapsed (step S32). The fourth nozzle 44 moves from the second retreat area to the processing position until the third predetermined time T3 elapses.

Specifically, the control unit 102 starts measuring time in response to the start of movement of the fourth nozzle 44. The third predetermined time T3 indicates a predetermined value as a time interval for supplying the second rinse liquid to the third nozzle 43, and is stored in the storage unit 103. The control unit 102 determines whether the time measurement result has reached the third predetermined time T3.

If the control device 101 (control unit 102) determines that the third predetermined time T3 has not elapsed (No in step S32), it repeats the process in step S32. When the control device 101 (control unit 102) determines that the third predetermined time T3 has elapsed (Yes in step S32), the control device 101 (control unit 102) controls the fourth valve VA4 (trailing valve) to close the fourth nozzle 44 (trailing valve). The supply of the second chemical liquid (subsequent treatment liquid) to the nozzle is started (step S33). Specifically, the control device 101 (control unit 102) transmits an open signal to the fourth valve VA4. The fourth valve VA4 switches from the closed state to the open state in response to receiving the open signal. As a result, supply of the second chemical liquid to the fourth nozzle 44 is started.

Similar to the first chemical liquid, the third delay time DT3 occurs from when the supply of the second chemical liquid to the fourth nozzle 44 is started until the second chemical liquid is discharged from the fourth discharge port 44a.

After starting the supply of the second chemical liquid (following treatment liquid) to the fourth nozzle 44 (following nozzle), the control device 101 (control unit 102) supplies the fourth discharge port 44a similarly to the first rinsing liquid. It is determined whether or not the start of ejection of the second chemical liquid (following treatment liquid) from the (discharge port of the following nozzle) is detected (step S34).

If the control device 101 (control unit 102) determines that the start of ejection of the second chemical liquid from the fourth ejection port 44a has not been detected (No in step S34), it repeats the process in step S34. When the control device 101 (control unit 102) determines that the start of ejection of the second chemical liquid (trailing treatment liquid) from the fourth ejection port 44a (the ejection port of the trailing nozzle) has been detected (Yes in step S34) , a closing operation control process is executed to control the third valve VA3 (preceding valve) to stop the supply of the second rinsing liquid (preceding treatment liquid) to the third nozzle 43 (preceding nozzle) (step S35). In this embodiment, the control device 101 (control unit 102) stops the supply of the second rinse liquid at the timing when the second chemical liquid is discharged from the fourth discharge port 44a.

Specifically, the control device 101 (control unit 102) transmits a close signal to the third valve VA3. The third valve VA3 switches from the open state to the closed state in response to receiving the close signal. As a result, the supply of the second rinsing liquid to the third nozzle 43 is stopped.

Furthermore, in this embodiment, the control device 101 (control unit 102) transmits a suction signal to the third suckback valve SB3. The third suckback valve SB3 executes a suction operation based on the suction signal and sucks the second rinsing liquid in the third liquid supply pipe 83 (suckback process). The closing operation of the third valve VA3 and the suction operation of the third suckback valve SB3 are executed in parallel with each other. As a result, the second rinsing liquid on the tip side of the third nozzle 43 is pulled back, and the discharge of the second rinsing liquid is stopped.

After stopping the supply of the second rinsing liquid, the control device 101 (control unit 102) determines whether the fourth predetermined time T4 has elapsed (step S36). Specifically, the control unit 102 starts measuring time in response to transmitting an open signal to the fourth valve VA4 (preceding valve). The fourth predetermined time T4 indicates a predetermined value as a time interval for supplying the second chemical liquid (preceding treatment liquid) to the fourth nozzle 44 (preceding nozzle), and is stored in the storage unit 103. The control unit 102 determines whether the time measurement result has reached the fourth predetermined time T4. The upper surface of the substrate W is covered with the liquid film of the second chemical solution during the elapse of the fourth predetermined time T4. In other words, the liquid film covering the upper surface of the substrate W is replaced from the rinsing liquid film to the second chemical liquid film.

When the control device 101 (control unit 102) determines that the fourth predetermined time T4 has not elapsed (No in step S36), it repeats the process in step S36. When the control device 101 (control unit 102) determines that the fourth predetermined time T4 has elapsed (Yes in step S36), the control device 101 (control unit 102) controls the third valve VA3 (following valve) similarly to step S23 shown in FIG. Then, supply of the second rinsing liquid (following processing liquid) to the third nozzle 43 (following nozzle) is started (step S37). As already explained, there is a delay time (fourth delay time DT4) between when the open signal is sent to the third valve VA3 and when the third nozzle 43 starts discharging the second rinsing liquid. Occur.

As shown in FIG. 11, the control device 101 (control unit 102) starts supplying the second rinsing liquid (following treatment liquid) to the third nozzle 43 (following nozzle), and then performs the steps shown in FIG. Similarly to S24, it is determined whether or not the start of ejection of the second rinsing liquid (trailing processing liquid) from the third ejection port 43a (the ejection port of the trailing nozzle) has been detected (step S41).

If the control device 101 (control unit 102) determines that the start of discharging the second rinse liquid from the third discharge port 43a is not detected (No in step S41), it repeats the process in step S41. When the control device 101 (control unit 102) determines that the start of discharging the second rinsing liquid (trailing processing liquid) from the third discharging port 43a (discharging port of the trailing nozzle) is detected (Yes in step S41), ), a closing operation control process is executed to control the fourth valve VA4 (preceding valve) to stop the supply of the second chemical liquid (preceding treatment liquid) to the fourth nozzle 44 (preceding nozzle) (step S42). In this embodiment, the control device 101 (control unit 102) stops the supply of the second chemical liquid at the timing when the second rinse liquid is discharged from the third discharge port 43a.

Specifically, the control device 101 (control unit 102) transmits a closing signal to the fourth valve VA4. The fourth valve VA4 switches from the open state to the closed state in response to receiving the close signal. As a result, the supply of the second chemical to the fourth nozzle 44 is stopped.

Furthermore, in this embodiment, the control device 101 (control unit 102) transmits a suction signal to the fourth suckback valve SB4. The fourth suckback valve SB4 executes a suction operation based on the suction signal and sucks the second chemical liquid in the fourth liquid supply pipe 84 (suckback process). The closing operation of the fourth valve VA4 and the suction operation of the fourth suckback valve SB4 are executed in parallel with each other. As a result, the second chemical liquid on the tip side of the fourth nozzle 44 is pulled back, and the discharge of the second chemical liquid is stopped.

After stopping the supply of the second chemical solution, the control device 101 (control unit 102) determines whether the fifth predetermined time T5 has elapsed (step S43). Specifically, the control unit 102 starts measuring time in response to transmitting an open signal to the third valve VA3. The fifth predetermined time T5 indicates a predetermined value as a time interval for supplying the second rinsing liquid to the third nozzle 43, and is stored in the storage unit 103. The control unit 102 determines whether the time measurement result has reached the fifth predetermined time T5. The upper surface of the substrate W is covered with the liquid film of the second rinsing liquid while the fifth predetermined time T5 has elapsed. In other words, the liquid film covering the upper surface of the substrate W is replaced from the second chemical liquid film to the second rinsing liquid film.

If the control device 101 (control unit 102) determines that the fifth predetermined time T5 has not elapsed (No in step S43), it repeats the process in step S43. When the control device 101 (control unit 102) determines that the fifth predetermined time T5 has elapsed (Yes in step S43), similarly to step S35 shown in FIG. 43 is stopped (step S44).

After stopping the supply of the second rinsing liquid, the substrate rotation unit 7 increases the rotation speed of the substrate W to dry the substrate W (step S45). When a predetermined period of time has elapsed after the supply of the second rinsing liquid was stopped, the substrate rotation unit 7 stops the rotation of the substrate W. As a result, the operation of the substrate processing apparatus 100 (substrate processing method) transitions to step S5 shown in FIG.

The substrate processing method (operation of the substrate processing apparatus 100) of this embodiment has been described above with reference to FIGS. 1 to 11. Note that the substrate processing methods shown in FIGS. 7 to 11 are executed for each processing chamber 2 by the substrate processing apparatus 100.

Next, the substrate processing apparatus 100 of this embodiment will be described with reference to FIGS. 1 to 12. FIG. 12 is a timing chart showing the opening/closing operations of the first valve VA1 to the fourth valve VA4 and the detection operation of the imaging device 110. Note that in FIG. 12, the horizontal axis indicates time.

As shown in FIG. 12, the control device 101 (control unit 102) transmits an open signal to the first valve VA1 when the first nozzle 41 moves to the processing position (time t1). As a result, the first valve VA1 (preceding valve) switches from the closed state to the open state, and the supply of the first chemical liquid to the first nozzle 41 is started, and the first chemical liquid (preceding treatment liquid) is supplied to the first discharge port 41a. It is supplied to the substrate W from the discharge port of the preceding nozzle.

When the first predetermined time T1 has elapsed since transmitting the open signal to the first valve VA1 and reaches time t2, the control device 101 (control unit 102) transmits the open signal to the second valve VA2. As a result, the second valve VA2 (following valve) switches from the closed state to the open state, and supply of the first rinsing liquid (following treatment liquid) to the second nozzle 42 (following nozzle) is started.

As already explained, the first delay time DT1 occurs from when the second valve VA2 switches from the closed state to the open state until the second nozzle 42 discharges the first rinsing liquid. Therefore, the imaging device 110 detects the start of ejection of the first rinsing liquid at the timing t3 after the first delay time DT1 has elapsed from the time t2. As a result, the control device 101 (control unit 102) transmits a close signal to the first valve VA1 at the timing t3 after the first delay time DT1 has elapsed from the time t2, and closes the first valve VA1. Switch from open state to closed state. When the first valve VA1 (preceding valve) switches from the open state to the closed state, the supply of the first chemical liquid to the first nozzle 41 is stopped, and the supply of the first chemical liquid to the substrate W from the first discharge port 41a (discharge port of the preceding nozzle) is stopped. The supply of the first chemical solution (preceding treatment solution) is stopped.

The control device 101 (control unit 102) transmits the opening signal to the second valve VA2 (leading valve) and then, when the second predetermined time T2 has elapsed and reaches time t4, transmits the opening signal to the third valve VA3 (following valve). Send open signal. As a result, the third valve VA3 switches from the closed state to the open state, and the supply of the second rinsing liquid (following treatment liquid) to the third nozzle 43 (following nozzle) is started. As already explained, the second delay time DT2 occurs after the third valve VA3 is opened until the third nozzle 43 discharges the second rinsing liquid.

Therefore, the imaging device 110 detects the start of ejection of the second rinsing liquid (subsequent processing liquid) at the timing t5 after the second delay time DT2 has elapsed from the time t4. As a result, the control device 101 (control unit 102) transmits a close signal to the second valve VA2 at the timing t5 after the second delay time DT2 has elapsed from the time t4, and closes the second valve VA2. Switch from open state to closed state. When the second valve VA2 (preceding valve) switches from the open state to the closed state, the supply of the first rinsing liquid to the second nozzle 42 is stopped, and the supply of the first rinsing liquid to the substrate W from the second discharge port 42a (discharge port of the preceding nozzle) The supply of the first rinsing liquid (preceding treatment liquid) is stopped.

The control device 101 (control unit 102) transmits the opening signal to the third valve VA3 (leading valve) and then, when the third predetermined time T3 has elapsed and reaches time t6, transmits the opening signal to the fourth valve VA4 (following valve). Send open signal. As a result, the fourth valve VA4 switches from the closed state to the open state, and the supply of the second chemical liquid (following treatment liquid) to the fourth nozzle 44 (following nozzle) is started. As already explained, the third delay time DT3 occurs after the fourth valve VA4 is opened until the fourth nozzle 44 discharges the second chemical liquid.

Therefore, the imaging device 110 detects the start of ejection of the second chemical liquid (subsequent treatment liquid) at the timing t7 after the third delay time DT3 has elapsed from the time t6. As a result, the control device 101 (control unit 102) transmits a close signal to the third valve VA3 at the timing t7 after the third delay time DT3 has elapsed from the time t6, and closes the third valve VA3. Switch from open state to closed state. When the third valve VA3 (preceding valve) switches from the open state to the closed state, the supply of the second rinsing liquid to the third nozzle 43 is stopped, and the second rinsing liquid is supplied to the substrate W from the third discharge port 43a (discharge port of the preceding nozzle). The supply of the second rinsing liquid (preceding treatment liquid) is stopped.

The control device 101 (control unit 102) transmits the opening signal to the fourth valve VA4 (leading valve) and then, when the fourth predetermined time T4 has elapsed and reaches time t8, opens the opening signal to the third valve VA3 (following valve). Send open signal. As a result, the third valve VA3 switches from the closed state to the open state, and the supply of the second rinsing liquid (following treatment liquid) to the third nozzle 43 (following nozzle) is started. As already explained, the fourth delay time DT4 occurs from when the third valve VA3 switches from the closed state to the open state until the third nozzle 43 discharges the second rinsing liquid.

Therefore, the imaging device 110 detects the start of ejection of the second rinsing liquid (subsequent processing liquid) at the timing t9 after the fourth delay time DT4 has elapsed from time t8. As a result, the control device 101 (control unit 102) transmits a close signal to the fourth valve VA4 at the timing t9 after the fourth delay time DT4 has elapsed from the time t8, and closes the fourth valve VA4. Switch from open state to closed state. When the fourth valve VA4 (preceding valve) switches from the open state to the closed state, the supply of the second chemical liquid to the fourth nozzle 44 is stopped, and the supply of the second chemical liquid to the substrate W from the fourth discharge port 44a (discharge port of the preceding nozzle) is stopped. The supply of the second chemical solution (preceding treatment solution) is stopped.

Embodiment 1 of the present invention has been described above with reference to FIGS. 1 to 12. According to this embodiment, in response to the imaging device 110 (detection unit) detecting the start of ejection of the subsequent processing liquid, the control unit 102 switches the preceding valve from the open state to the closed state. Therefore, the operator does not need to set delay times (first delay time DT1 to fourth delay time DT4) that delay the timing of the closing operation of the preceding valve.

For example, the delay time needs to be changed every time the discharge pressure of each processing liquid changes. Similarly, the delay time needs to be changed each time the air pressure for opening and closing each valve or the suckback position of each processing liquid changes. Further, the delay time needs to be changed every time the utility capacity of the factory where the substrate processing apparatus 100 is installed changes. Therefore, in a configuration in which the operator sets the delay time, the burden on the operator increases. In contrast, according to the present embodiment, there is no need for the operator to set the delay time, so the burden on the operator can be reduced.

Furthermore, the length of the delay time differs for each processing chamber 2 due to the length of piping from each valve to each discharge port, the height difference between each discharge port, and the like. Therefore, the delay time needs to be set for each processing chamber 2. According to this embodiment, there is no need for the worker to set the delay time, so the burden on the worker can be reduced.

In addition, in a configuration in which the discharging of the preceding processing liquid by the preceding nozzle is stopped at the timing when the supply of the following processing liquid to the following nozzle is started (the timing when the following valve is switched from the closed state to the open state), Particles may be generated on the substrate W due to the delay time from when the supply of the subsequent processing liquid to the nozzle is started until the subsequent processing liquid lands on the substrate W. Particularly, when a fine pattern is formed on the surface of the substrate W, the generation of particles has a large effect on the characteristics of the substrate W. The particles are, for example, watermarks.

Specifically, due to the delay time from the start of supply of the subsequent processing liquid to the subsequent nozzle until the subsequent processing liquid lands on the substrate W, poor coverage may occur on the outer periphery of the substrate W. This may occur. Poor coverage indicates that the upper surface of the substrate W is not covered with a film of the processing liquid and is exposed. Poor coverage mainly occurs due to the surface tension of the processing liquid. If poor coverage occurs on the outer periphery of the substrate W and the outer periphery of the substrate W dries, watermarks may occur on the outer periphery of the substrate W.

In addition, in a configuration in which the discharging of the preceding processing liquid by the preceding nozzle is stopped at the timing when the supply of the following processing liquid to the following nozzle is started (the timing when the following valve is switched from the closed state to the open state), Due to the delay time from the start of supply of the subsequent processing liquid to the nozzle until the subsequent processing liquid lands on the substrate W, the pattern formed on the surface of the substrate W may collapse. There is sex. In particular, when a fine pattern is formed on the surface of the substrate W, the collapse of the pattern has a large effect on the characteristics of the substrate W.

Specifically, as already explained, due to the delay time from the start of supply of the subsequent processing liquid to the subsequent nozzle until the subsequent processing liquid lands on the substrate W, If poor coverage occurs at the outer periphery, the outer periphery of the substrate W may become dry. The collapse of the pattern occurs due to drying of the surface of the substrate W.

In contrast, according to the present embodiment, the start of ejection of the trailing processing liquid from the trailing nozzle is detected. Therefore, compared to a configuration in which the discharging of the preceding processing liquid by the preceding nozzle is stopped at the timing when the supply of the succeeding processing liquid to the succeeding nozzle is started (the timing when the following valve is switched from the closed state to the open state), The timing at which the preceding nozzle stops discharging the preceding processing liquid can be controlled so that the delay time from when the discharging of the preceding processing liquid is stopped until the subsequent processing liquid lands on the substrate W is reduced. can. Therefore, it is possible to reduce the delay time from when the discharging of the preceding processing liquid is stopped until the subsequent processing liquid lands on the substrate W, thereby suppressing the occurrence of watermarks and collapse of the pattern.

Note that in the present embodiment, the imaging device 110 starts imaging after the substrate holding unit 3 holds the substrate W, and ends the imaging after substrate processing is performed, but the timing of the imaging start and end of imaging by the imaging device 110 may vary. is not particularly limited as long as the start of ejection of the first rinsing liquid, the start of ejection of the second rinsing liquid, and the start of ejection of the second chemical solution can be detected.

[Embodiment 2]
Next, a second embodiment of the present invention will be described with reference to FIGS. 1 to 6, FIGS. 9 to 11, and FIGS. 13 to 15. However, matters that are different from Embodiment 1 will be explained, and explanations of matters that are the same as Embodiment 1 will be omitted. Embodiment 2 differs from Embodiment 1 in that data indicating the ejection start timing of each treatment liquid is transmitted to the external device GS.

FIG. 13 is a block diagram showing part of the configuration of the substrate processing apparatus 100 of this embodiment. Note that, in FIG. 13, for ease of understanding, only the control device 101 and the communication unit 112 are shown among the components of the substrate processing apparatus 100, and other components are omitted.

As shown in FIG. 13, the substrate processing apparatus 100 of this embodiment further includes a communication section 112. The communication unit 112 communicates with the external device GS. For example, the communication unit 112 may be connected to the network NW by wire or wirelessly, and may communicate with an external device GS connected to the network NW. The network NW includes, for example, the Internet, a LAN (Local Area Network), and a public telephone network. In this case, the communication unit 112 may be, for example, a network interface controller.

In the present embodiment, the communication unit 112 transmits data indicating the ejection start timing of each processing liquid (first chemical liquid, second chemical liquid, first rinsing liquid, and second rinsing liquid) to the external device GS. More specifically, the communication unit 112 transmits the ejection start timing of the first chemical liquid, the ejection start timing of the first rinsing liquid, the ejection start timing of the second rinsing liquid (first time), the ejection start timing of the second chemical liquid, and The discharge start timing (second time) of the second rinse liquid is transmitted to the external device GS.

As described with reference to FIG. 4, the imaging range SH of the imaging device 110 includes the tip of the first nozzle 41 located at the processing position (first ejection port 41a), and the tip (first ejection port 41a) of the first nozzle 41 located at the processing position. It further includes a range in which the first chemical liquid discharged from the first chemical liquid can be photographed. In the present embodiment, the imaging device 110 further detects the start of ejection of the first chemical liquid, similarly to the second chemical liquid, the first rinsing liquid, and the second rinsing liquid. Further, the control unit 102 further acquires the timing at which the first nozzle 41 starts discharging the first chemical liquid, similarly to the second chemical liquid, the first rinsing liquid, and the second rinsing liquid.

More specifically, the control unit 102 sets the image processing area KA for the first nozzle 41 when the first nozzle 41 is located at the processing position. Specifically, the image processing area KA includes a fourth image processing area extending from the tip of the first nozzle 41 (first ejection port 41a) in the ejection direction of the first chemical liquid. The control unit 102 detects the timing to start discharging the first chemical liquid based on the image of the fourth image processing area.

The external device GS is, for example, a host computer or a server. The external device GS collects and analyzes the discharge start timing of each processing liquid. The external device GS may transmit a command to the substrate processing apparatus 100 to adjust the supply time of each processing liquid to the substrate W, for example, based on the discharge start timing of each collected processing liquid. Note that the external device GS may communicate with a plurality of substrate processing apparatuses 100. In this case, the external device GS collects the discharge start timing of each processing liquid for each substrate processing apparatus 100.

Next, the substrate processing method of this embodiment will be explained with reference to FIGS. 1 to 6, FIGS. 9 to 11, FIG. 13, and FIG. FIG. 14 is a flowchart showing the substrate processing method of this embodiment. The substrate processing method shown in FIG. 14 is executed by the substrate processing apparatus 100 described with reference to FIGS. 1 to 6 and 13. Therefore, FIG. 14 shows the operation of the substrate processing apparatus 100 of this embodiment.

The substrate processing method (operation of the substrate processing apparatus 100) shown in FIG. 14 further includes step S7 in addition to the substrate processing method (operation of the substrate processing apparatus 100) described with reference to FIG.

Specifically, when the central robot CR carries out the substrate W to the outside of the processing chamber 2 (step S6), the control device 101 (control unit 102) controls the communication unit 112 to transmit each processing liquid (first chemical solution). , the second chemical liquid, the first rinsing liquid, and the second rinsing liquid) are transmitted to the external device GS (step S7). As a result, the substrate processing method (operation of the substrate processing apparatus 100) shown in FIG. 14 ends.

Next, the substrate processing method (operation of the substrate processing apparatus 100) of this embodiment will be described with reference to FIGS. 1 to 6, FIGS. 9 to 11, and FIGS. 13 to 15. FIG. 15 is a flowchart showing the flow of substrate processing (step S4 shown in FIG. 14). Specifically, FIG. 15 shows part of the flow of substrate processing.

As shown in FIG. 15, when substrate processing is started, the first nozzle moving mechanism 5 moves the first nozzle 41 from the first retreat area to the processing position (step S51), similar to step S11 in FIG. .

When the first nozzle 41 moves to the processing position, similarly to step S12 in FIG. 8, the control device 101 (control unit 102) controls the first valve VA1 (preceding valve) to The supply of the first chemical liquid (preceding treatment liquid) to the first chemical liquid (preceding treatment liquid) is started (step S52).

After starting the supply of the first chemical liquid, the control device 101 (control unit 102) determines whether or not the start of ejection of the first chemical liquid (preceding treatment liquid) from the first ejection port 41a (discharge port of the preceding nozzle) is detected. It is determined whether (step S53). Specifically, the control device 101 (control unit 102) determines whether or not the start of ejection of the first chemical liquid from the first ejection port 41a is detected based on the captured image SG input from the imaging device 110. do. Specifically, the control device 101 (control unit 102) extracts a fourth image processing area from each frame of the captured image SG. Then, the control device 101 (control unit 102) performs image processing on each fourth image processing area, and determines whether or not the start of ejection of the first chemical liquid from the first ejection port 41a is detected.

If the control device 101 (control unit 102) determines that the start of ejection of the first chemical liquid from the first ejection port 41a has not been detected (No in step S53), it repeats the process in step S53. When the control device 101 (control unit 102) determines that the start of ejection of the first chemical liquid (preceding treatment liquid) from the first ejection port 41a (the ejection port of the preceding nozzle) has been detected (Yes in step S53), Similarly to Step S13 of No. 8, it is determined whether the first predetermined time T1 has elapsed since the supply of the first chemical solution was started (Step S54). Each subsequent step (step S55 to step S57) is similar to step S14 to step S16 in FIG. 8, so a description thereof will be omitted.

Embodiment 2 of the present invention has been described above with reference to FIGS. 1 to 6, FIGS. 9 to 11, and FIGS. 13 to 15. According to this embodiment, compared to a configuration in which the external device GS analyzes the timing at which an open signal is sent to each valve (first valve VA1 to fourth valve VA4), the supply time of each processing liquid can be made with higher accuracy. It becomes possible to make adjustments.

In detail, as already explained, each processing liquid (first chemical liquid, first rinsing liquid, second rinsing liquid, second chemical liquid) is discharged from each discharge port (first discharge port 41a to fourth discharge port 44a). The timing at which this starts is delayed from the timing at which the opening signal is sent to each valve (first valve VA1 to fourth valve VA4). These delay times are caused by fluctuations in the discharge pressure of each processing liquid, fluctuations in the air pressure that opens and closes each valve, fluctuations in the suckback position of each processing liquid, the length of piping from each valve to each discharge port, and each discharge port. This occurs due to differences in height, etc. Therefore, the delay time is not uniform. Therefore, in a configuration that analyzes the timing at which an open signal is sent to each valve (first valve VA1 to fourth valve VA4), various factors are taken into consideration in order to adjust the supply time of each processing liquid to the substrate W. There is a need to. Therefore, it is not easy to adjust the supply time of each processing liquid to the substrate W with high precision. On the other hand, according to the present embodiment, since the discharge start timing of each treatment liquid can be analyzed, the supply time of each treatment liquid to the substrate W can be adjusted with high precision.

In this embodiment, when the central robot CR carries out the substrate W to the outside of the processing chamber 2 (step S6), the control device 101 (control unit 102) controls the communication unit 112 to discharge each processing liquid. Although the data indicating the start timing is transmitted to the external device GS, the timing of transmitting the data indicating the discharge start timing of each treatment liquid is not particularly limited. For example, the control device 101 (control unit 102) may transmit data indicating the ejection start timing of each processing liquid to the external device GS every time the substrate processing is performed a predetermined number of times.

Further, in the present embodiment, the discharge start timing of each treatment liquid is detected, but the control unit 102 detects the discharge start timing of each treatment liquid instead of or in addition to the discharge start timing of each treatment liquid. The liquid supply stop timing may be acquired and data on these timings may be transmitted to the external device GS. By analyzing the supply stop timing of each treatment liquid instead of or in addition to the discharge start timing of each treatment liquid, the supply time of each treatment liquid to the substrate W can be increased. It becomes possible to adjust with precision.

Specifically, the control unit 102 may obtain the timing at which the close signal is sent to the first valve VA1 as the timing to stop supplying the first chemical solution (step S57 in FIG. 15). Similarly, the control unit 102 determines the timing at which the close signal is sent to the second valve VA2 (step S25 in FIG. 9) as the supply stop timing for the first rinsing liquid, the second rinsing liquid (first time), and the second chemical solution. , the timing at which the closing signal was sent to the third valve VA3 (step S35 in FIG. 10), and the timing at which the closing signal was sent to the fourth valve VA4 (step S42 in FIG. 11) may be acquired.

[Embodiment 3]
Next, a third embodiment of the present invention will be described with reference to FIGS. 1 to 8, FIG. 10, and FIGS. 16 to 20. However, matters that are different from Embodiments 1 and 2 will be explained, and descriptions of matters that are the same as Embodiments 1 and 2 will be omitted. Embodiment 3 is different from Embodiment 1 in that the stop of discharging of the first rinsing liquid (preceding treatment liquid) and the second chemical liquid (preceding treatment liquid) is further delayed after the start of discharging of the second rinsing liquid (following treatment liquid). , is different from 2.

FIG. 16 is a block diagram showing part of the configuration of the substrate processing apparatus 100 of this embodiment. Note that, in FIG. 16, for ease of understanding, among the components of the substrate processing apparatus 100, only the control device 101, the input section 113, and the display section 114 are shown, and other components are omitted. As shown in FIG. 16, the substrate processing apparatus 100 of this embodiment further includes an input section 113 and a display section 114.

The input unit 113 is a user interface device operated by an operator. The input unit 113 inputs instructions (control signals) to the control unit 102 according to the operator's operations. Further, the input unit 113 inputs data corresponding to the operator's operation to the control unit 102. Input unit 113 typically includes a keyboard and a mouse. Note that the input unit 113 may include a touch sensor. The touch sensor is superimposed on the display surface of the display unit 114 and generates a signal indicating a touch operation on the display surface by a worker. The operator can input various instructions and data to the control unit 102 through touch operations.

In this embodiment, the worker can operate the input unit 113 to input (register or set) various types of information into input fields on the screen displayed on the display unit 114. Specifically, the operator can input the value of the additional delay time ADT by operating the input unit 113.

As described with reference to FIG. 2, the third nozzle 43 is arranged outside the liquid receiving part 9, and the second rinsing liquid is directed from the outside of the liquid receiving part 9 toward the center of the rotating substrate W. Discharge. Therefore, a delay time occurs from when the third nozzle 43 starts discharging the second rinsing liquid until the second rinsing liquid lands on the substrate W. Hereinafter, this delay time may be referred to as "liquid landing delay time". The additional delay time ADT can be set according to the liquid landing delay time.

FIG. 17 is a diagram showing the input screen GA displayed by the display unit 114. The input screen GA is a screen for setting the additional delay time ADT. As shown in FIG. 17, the input screen GA includes an input field NR for inputting the value of the additional delay time ADT.

When the input screen GA is displayed on the display section 114, the operator can input the value of the additional delay time ADT into the input field NR by operating the input section 113. The operator may determine the value of the additional delay time ADT, taking into consideration, for example, the discharge flow rate of the second rinsing liquid, the distance from the third discharge port 43a to the substrate W, and the like.

Next, the substrate processing method (operation of the substrate processing apparatus 100) of this embodiment will be described with reference to FIGS. 1 to 8, FIG. 10, and FIGS. 16 to 19. 18 and 19 are flowcharts showing the flow of substrate processing (step S4 shown in FIG. 7). Specifically, FIG. 18 shows part of the flow of substrate processing. FIG. 19 shows another part of the flow of substrate processing.

As shown in FIG. 18, the control device 101 (control unit 102) determines that the start of discharging the second rinsing liquid (trailing processing liquid) from the third discharge port 43a (discharging port of the trailing nozzle) has been detected. If so (Yes in step S24), a closing operation control process is performed in which the second valve VA2 (preceding valve) is controlled to stop the supply of the first rinsing liquid (preceding treatment liquid) to the second nozzle 42 (preceding nozzle). Execute (step S25).

Specifically, when the control device 101 (control unit 102) determines that the start of discharging the second rinsing liquid (trailing processing liquid) from the third discharge port 43a (discharging port of the trailing nozzle) is detected (step (Yes in S24), it is determined whether the additional delay time ADT described with reference to FIGS. 16 and 17 has elapsed (step S251). Specifically, the control unit 102 starts measuring time in response to the detection of the start of discharging the second rinse liquid. The control unit 102 determines whether the time measurement result has reached the additional delay time ADT. The second rinsing liquid lands on the substrate W while the additional delay time ADT has elapsed.

If the control device 101 (control unit 102) determines that the additional delay time ADT has not elapsed (No in step S251), it repeats the process in step S251. When the control device 101 (control unit 102) determines that the additional delay time ADT has elapsed (Yes in step S251), the control device 101 (control unit 102) controls the second valve VA2 (preceding valve) to prevent the second nozzle 42 (preceding nozzle) from flowing. A closing operation control process for stopping the supply of the first rinsing liquid (preceding treatment liquid) is executed (step S252).

Further, as shown in FIG. 19, the control device 101 (control unit 102) detects the start of discharging the second rinsing liquid (trailing processing liquid) from the third discharge port 43a (discharging port of the trailing nozzle). If it is determined that this is the case (Yes in step S41), the closing operation control process controls the fourth valve VA4 (preceding valve) to stop the supply of the second chemical liquid (preceding treatment liquid) to the fourth nozzle 44 (preceding nozzle). (Step S42).

Specifically, when the control device 101 (control unit 102) determines that the start of discharging the second rinsing liquid (trailing processing liquid) from the third discharge port 43a (discharging port of the trailing nozzle) is detected (step (Yes in S41), similarly to step S251 shown in FIG. 18, it is determined whether the additional delay time ADT has elapsed (step S421). When the control device 101 (control unit 102) determines that the additional delay time ADT has elapsed (Yes in step S421), the control device 101 (control unit 102) controls the fourth valve VA4 (preceding valve) to control the fourth nozzle 44 (preceding nozzle). A closing operation control process is executed to stop the supply of the second chemical liquid (preliminary treatment liquid) to (step S422).

Next, the substrate processing apparatus 100 of this embodiment will be described with reference to FIGS. 1 to 8, FIG. 10, and FIGS. 16 to 20. FIG. 20 is a timing chart showing the opening/closing operations of the first valve VA1 to the fourth valve VA4 and the detection operation of the imaging device 110. Note that in FIG. 20, the horizontal axis indicates time.

As shown in FIG. 20, the second valve VA2 does not transition to the closed state at the timing (time t15) when the start of discharge of the second rinse liquid is detected, but maintains the open state. In the present embodiment, the second valve VA2 switches from the open state to the closed state at the timing (time 16) when the additional delay time ADT has further elapsed from the timing (time t15) at which the discharge start of the second rinsing liquid was detected. Similarly, the fourth valve VA4 switches from the open state to the closed state at the timing (time 21) when the additional delay time ADT has elapsed from the timing (time t20) when the start of discharge of the second rinsing liquid was detected.

Embodiment 3 of the present invention has been described above with reference to FIGS. 1 to 8, FIG. 10, and FIGS. 16 to 20. According to this embodiment, coverage defects due to the liquid landing delay time are less likely to occur after the discharge of the second rinsing liquid is started.

[Embodiment 4]
Next, a fourth embodiment of the present invention will be described with reference to FIGS. 1 to 7, FIGS. 9 to 11, FIG. 21, and FIG. 22. However, matters that are different from Embodiments 1 to 3 will be explained, and descriptions of matters that are the same as Embodiments 1 to 3 will be omitted. Embodiment 4 differs from Embodiments 1 to 3 in that the supply start timing of the first chemical solution is delayed.

FIG. 21 is a flowchart showing the flow of substrate processing (step S4 shown in FIG. 7). Specifically, FIG. 21 shows part of the flow of substrate processing. As shown in FIG. 21, when substrate processing is started, the first nozzle moving mechanism 5 moves the first nozzle 41 from the first retreat area to the processing position (step S71), similar to step S11 in FIG. .

When the first nozzle 41 moves to the processing position, the control device 101 (control unit 102) determines whether the start delay time SDT has elapsed (step S72). Specifically, the control unit 102 starts measuring time in response to the movement of the first nozzle 41 to the processing position. The start delay time SDT is stored in the storage unit 103. The control unit 102 determines whether the time measurement result has reached the start delay time SDT.

If the control device 101 (control unit 102) determines that the start delay time SDT has not elapsed (No in step S72), it repeats the process in step S72. When the control device 101 (control unit 102) determines that the start delay time SDT has elapsed (Yes in step S72), the control device 101 (control unit 102) controls the second valve VA2 (trailing valve) as in step S12 of FIG. , the supply of the first rinsing liquid (following processing liquid) to the second nozzle 42 (following nozzle) is started (step S73). The subsequent operations (steps S74 to S77) are similar to steps S13 to S16 in FIG. 8, so their description will be omitted.

Next, the substrate processing apparatus 100 of this embodiment will be described with reference to FIGS. 1 to 7, FIGS. 9 to 11, FIG. 21, and FIG. 22. FIG. 22 is a timing chart showing the opening/closing operations of the first valve VA1 and the second valve VA2 and the detection operation by the imaging device 110. Note that in FIG. 22, the horizontal axis indicates time.

As shown in FIG. 22, the control device 101 (control unit 102) controls the first nozzle 41 at the timing (time t22) when the start delay time SDT has further elapsed from the timing (time t21) when the first nozzle 41 moves to the processing position. Sends an open signal to valve VA1. As a result, the first valve VA1 is opened, the supply of the first chemical to the first nozzle 41 is started, and the first chemical is supplied to the substrate W from the first discharge port 41a.

Here, the start delay time SDT will be explained. The start delay time SDT is determined based on the first delay time DT1. For example, the control unit 102 may obtain the first delay time DT1 when performing the first substrate processing, and set the value of the first delay time DT1 to the value of the start delay time SDT. Alternatively, the control unit 102 may acquire the first delay time DT1 every time a substrate process is executed, and update the start delay time SDT before executing the next substrate process.

Embodiment 4 of the present invention has been described above with reference to FIGS. 1 to 7, FIG. 9, FIG. 10, FIG. 21, and FIG. 22. According to this embodiment, it is possible to suppress the supply time of the first chemical solution to the substrate W from increasing due to the first delay time DT1. Therefore, it is possible to suppress the occurrence of defects caused by an increase in the time for supplying the first chemical solution (preceding treatment solution) to the substrate W.

For example, when the substrate processing using the first chemical liquid is an etching process that flattens the upper surface of the substrate W, if the supply time of the first chemical liquid to the substrate W becomes longer than the first predetermined time T1, the thickness of the substrate W may become thinner than the target thickness. Therefore, there is a possibility that the characteristics of a device manufactured using the substrate W may not be the desired characteristics.

Further, when the substrate W is a patterned wafer and the substrate processing using the first chemical liquid is an etching process for removing a native oxide film, if the time for supplying the first chemical liquid to the substrate W is longer than the length of the first predetermined time T1. There is a possibility that the silicon oxide film constituting the pattern becomes too thin and the characteristics of a device manufactured using the substrate W do not have the desired characteristics. Furthermore, if the silicon oxide film constituting the pattern becomes too thin, the pattern tends to collapse.

Furthermore, if the metal wiring is exposed at the bottom of the groove of the pattern, the first chemical solution removes the natural oxide film covering the metal wiring. However, if the supply time of the first chemical solution to the substrate W is longer than the first predetermined time T1, there is a risk that the metal wiring will be etched and the electrical characteristics of a device manufactured using the substrate W may not have the desired characteristics. There is.

According to the present embodiment, since it is possible to suppress an increase in the supply time of the first chemical solution to the substrate W due to the first delay time DT1, the supply time of the first chemical solution to the substrate W can be suppressed for the first predetermined time period. It is difficult to become longer than the length of T1. Therefore, for example, the occurrence of defects as described above can be suppressed.

Note that when the first substrate processing is executed, the timing of transmitting the open signal to the first valve VA1 cannot be adjusted by the start delay time SDT. Therefore, the first substrate W may be a dummy wafer.

The embodiments of the present invention have been described above with reference to the drawings (FIGS. 1 to 22). However, the present invention is not limited to the above-described embodiments, and can be implemented in various forms without departing from the spirit thereof. Further, the plurality of components disclosed in the above embodiments can be modified as appropriate. For example, some of the components shown in one embodiment may be added to the components of another embodiment, or some of the components shown in one embodiment may be configured. Elements may be deleted from the embodiment.

The drawings mainly schematically show each component in order to facilitate understanding of the invention, and the thickness, length, number, spacing, etc. of each illustrated component may vary depending on the convenience of drawing. The above image may differ from the actual one. Further, the configuration of each component shown in the above embodiment is an example, and is not particularly limited, and it goes without saying that various changes can be made without substantially departing from the effects of the present invention. .

Next, modifications of the embodiments (Embodiments 1 to 4) described with reference to FIGS. 1 to 22 will be described.

(1) In the embodiments described with reference to FIG. 1 to FIG. , second rinsing liquid and second chemical solution) are discharged from the discharge ports (second discharge ports 42a to fourth discharge ports 44a) of the nozzles (second nozzle 42 to fourth nozzle 44, or first nozzle 41 to fourth nozzle 44). , or if ejection from the first ejection port 41a to the fourth ejection port 44a) is detected, but the member (material) constituting the nozzle is a transparent member (transparent material), the imaging device 110 The arrival of the treatment liquid at the discharge port of the nozzle may be detected as the start of discharge of the treatment liquid.

FIG. 23 is a diagram showing a first modification of the substrate processing apparatus 100 according to the embodiment described with reference to FIGS. 1 to 22. Specifically, FIG. 23 shows a captured image SG when the first rinse liquid reaches the second discharge port 42a. As shown in FIG. 23, when the member (material) constituting the second nozzle 42 is a transparent member (transparent material), the imaging device 110 is configured such that the first rinsing liquid is It is possible to detect that the liquid has reached the discharge port 42a).

When detecting that the first rinse liquid has reached the discharge port of the second nozzle 42, the first image processing area KA1 may be set to an area where the second nozzle 42 from its base end to its tip is captured. . The width of the first image processing area KA1 in the horizontal direction may be set wider than the width of the second nozzle 42. The length of the first image processing area KA1 in the vertical direction may be set to be approximately the same as the length of the second nozzle 42. The other image processing areas KA (second to fourth image processing areas) are also set in the same way as the first image processing area KA1.

(2) In the embodiments described with reference to FIG. 1 to FIG. , second rinsing liquid and second chemical solution) are discharged from the discharge ports (second discharge ports 42a to fourth discharge ports 44a) of the nozzles (second nozzle 42 to fourth nozzle 44, or first nozzle 41 to fourth nozzle 44). , or if ejection from the first ejection port 41a to the fourth ejection port 44a) is detected, but the member (material) constituting the nozzle is a transparent member (transparent material), the imaging device 110 As the start of ejection of the processing liquid, it may be detected that the processing liquid has reached the vicinity RL of the ejection opening of the nozzle.

FIG. 24 is a diagram showing a second modification of the substrate processing apparatus 100 according to the embodiment described with reference to FIGS. 1 to 22. Specifically, FIG. 24 shows a captured image SG when the first rinse liquid reaches the vicinity RL of the second discharge port 42a. As shown in FIG. 24, when the member (material) constituting the second nozzle 42 is a transparent member (transparent material), the imaging device 110 is configured such that the first rinsing liquid is It is possible to detect that the discharge port 42a) has reached the vicinity RL. Here, the vicinity RL of the second discharge port 42a is, for example, whether the range from the tip of the second nozzle 42 (second discharge port 42a) is the same as the range L from the tip to the base end of the second nozzle 42. , a narrower range is shown on the tip side of the second nozzle 42 than that. The vicinity RL of the other discharge ports (the first discharge port 41a, the third discharge port 43a, and the fourth discharge port 44a) is also similar to the vicinity RL of the second discharge port 42a.

When detecting that the first rinsing liquid has reached the vicinity RL of the discharge port of the second nozzle 42, the first image processing area KA1 is set to an area where the second nozzle 42 from its base end to its tip is captured. It's okay. The other image processing areas KA (second to fourth image processing areas) are also set in the same way as the first image processing area KA1.

(3) In the embodiments described with reference to FIGS. 1 to 22, the substrate processing apparatus 100 includes the imaging device 110 as a detection section. It is not limited to the device 110. For example, the substrate processing apparatus 100 may include a photosensor 120 as a detection section.

FIG. 25 is a diagram showing a third modification of the substrate processing apparatus 100 according to the embodiment described with reference to FIGS. 1 to 22. The substrate processing apparatus 100 shown in FIG. 25 includes a photosensor 120 as a detection section. Specifically, the substrate processing apparatus 100 includes three photosensors 120. The three photosensors 120 include a photosensor 120 provided for the second nozzle 42, a photosensor 120 provided for the third nozzle 43, and a photosensor 120 provided for the fourth nozzle 44. . FIG. 25 shows a photosensor 120 provided for the second nozzle 42. As shown in FIG. Hereinafter, the photosensor 120 provided for the second nozzle 42 may be referred to as "photosensor 121."

As shown in FIG. 25, the photosensor 121 irradiates the area below the second nozzle 42 located at the standby position with light and receives the light reflected from the area below the second nozzle 42. Therefore, the first rinse liquid is discharged from the discharge port (second discharge port 42a) of the second nozzle 42, and as the first rinse liquid passes through the lower region of the second nozzle 42, the photosensor 121 receives light. The light changes. Therefore, the photosensor 121 can detect that the first rinse liquid is discharged from the discharge port of the second nozzle 42 .

Similarly to the photosensor 121, the photosensor 120 provided for the third nozzle 43 also detects that the second rinse liquid is discharged from the discharge port (third discharge port 43a) of the third nozzle 43. Similarly to the photosensor 121, the photosensor 120 provided for the fourth nozzle 44 also detects that the second chemical liquid has been ejected from the ejection port (fourth ejection port 44a) of the fourth nozzle 44 located at the processing position. To detect. Furthermore, similarly to the imaging device 110 described in the second embodiment, the photosensor 120 provided for the fourth nozzle 44 is configured to detect a distance between the ejection port (the first ejection port 41a) of the first nozzle 41 located at the processing position and the It may also be possible to detect that one chemical liquid has been discharged.

Note that in the photosensor 120, the members (materials) constituting the nozzles (first nozzle 41 to fourth nozzle 44) are transparent members (transparent material), similarly to the imaging device 110 described with reference to FIG. In some cases, it is detected that the processing liquid (first chemical liquid, first rinsing liquid, second rinsing liquid, second chemical liquid) has reached the discharge port (first discharge port 41a to fourth discharge port 44a) of the nozzle. Good too. Alternatively, in the photosensor 120, the members (materials) constituting the nozzles (first nozzle 41 to fourth nozzle 44) are transparent members (transparent material), similar to the imaging device 110 described with reference to FIG. In some cases, it is determined that the processing liquid (first chemical liquid, first rinsing liquid, second rinsing liquid, second chemical liquid) has reached the vicinity RL of the nozzle discharge port (first discharge port 41a to fourth discharge port 44a). May be detected.

FIG. 26 is a diagram showing a fourth modification of the substrate processing apparatus 100 according to the embodiment described with reference to FIGS. 1 to 22. As shown in FIG. 26, when the member (material) constituting the second nozzle 42 is a transparent member (transparent material), the photosensor 121 irradiates the vicinity RL of the second discharge port 42a with light, Reflected light from the vicinity RL of the second ejection port 42a may be received. When the member (material) constituting the second nozzle 42 is a transparent member (transparent material), when the first rinse liquid passes through the vicinity RL of the second discharge port 42a, the light received by the photosensor 121 is Change. Therefore, the photosensor 121 can detect that the first rinse liquid has reached the vicinity RL of the discharge port of the second nozzle 42 .

Similarly to the photosensor 121, the photosensor 120 provided for the third nozzle 43 may detect that the second rinse liquid has reached the vicinity RL of the third discharge port 43a. Similarly to the photosensor 121, the photosensor 120 provided for the fourth nozzle 44 may also detect that the second chemical liquid has reached the vicinity RL of the fourth discharge port 44a. Furthermore, the photosensor 120 provided for the fourth nozzle 44 may detect that the first chemical liquid has reached the vicinity RL of the first discharge port 41a.

(4) In the embodiments described with reference to FIGS. 1 to 22, the substrate processing apparatus 100 includes the imaging device 110 as the detection section, but the substrate processing apparatus 100 also includes a capacitance sensor as the detection section. 130 may be provided.

27 and 28 are diagrams showing a fifth modification of the substrate processing apparatus 100 according to the embodiment described with reference to FIGS. 1 to 22. The substrate processing apparatus 100 shown in FIGS. 27 and 28 includes a capacitance sensor 130 as a detection section. The capacitance sensor 130 generates an electric field in a detection area, and detects a detection target based on a change in capacitance when the detection target enters the electric field.

Specifically, the substrate processing apparatus 100 includes three capacitance sensors 130. The three capacitance sensors 130 include a capacitance sensor 130 installed in the second nozzle 42, a capacitance sensor 130 installed in the third nozzle 43, and a capacitance sensor 130 installed in the fourth nozzle 44. sensor 130. 27 and 28 show a capacitance sensor 130 installed in the second nozzle 42. FIG. Hereinafter, the capacitance sensor 130 installed in the second nozzle 42 may be referred to as "capacitance sensor 131."

As shown in FIGS. 27 and 28, the capacitance sensor 131 is installed in the vicinity RL of the second discharge port 42a. The capacitance sensor 131 generates an electric field in the vicinity RL of the second discharge port 42a. Therefore, when the first rinsing liquid passes through the vicinity RL of the second discharge port 42a, the capacitance sensor 131 detects the first rinsing liquid. Therefore, the capacitance sensor 131 can detect that the first rinse liquid has reached the vicinity RL of the second discharge port 42a.

Similarly to the capacitance sensor 131, the capacitance sensor 130 installed in the third nozzle 43 is also installed in the vicinity RL of the third discharge port 43a, and the second rinse liquid is placed in the vicinity RL of the third discharge port 43a. Detects that the has arrived. Similarly to the capacitance sensor 131, the capacitance sensor 130 provided for the fourth nozzle 44 is also installed in the vicinity RL of the fourth discharge port 44a, and the second chemical liquid is placed in the vicinity RL of the fourth discharge port 44a. Detects that the has arrived.

Note that the substrate processing apparatus 100 may further include a capacitance sensor 130 installed in the first nozzle 41. Like the capacitance sensor 131, the capacitance sensor 130 installed in the first nozzle 41 is installed in the vicinity RL of the first discharge port 41a, and the first chemical solution is installed in the vicinity RL of the first discharge port 41a. Detect that it has been reached.

(5) In the embodiments described with reference to FIG. 1 to FIG. There is no particular limitation as long as it can be held horizontally. For example, the substrate holder 3 may be a vacuum chuck or a Bernoulli chuck.

(6) In the embodiments described with reference to FIGS. 1 to 22, the second nozzle 42 moves from the standby position to the processing position, but the second nozzle 42 does not have to move from the standby position to the processing position. good. That is, the second nozzle 42 may supply the first rinsing liquid to the substrate W from the standby position.

(7) In the embodiments described with reference to FIGS. 1 to 22, the imaging device 110 is placed outside the processing chamber 2, but the imaging device 110 may be placed inside the processing chamber 2.

(8) In the embodiments described with reference to FIGS. 1 to 22, the control unit 102 measures time, but the substrate processing apparatus 100 may include a timer circuit. In this case, the control unit 102 causes the timer circuit to measure time. The timer circuit may be provided in the control device 101.

(9) In the embodiment described with reference to FIGS. 1 to 22, the substrate processing apparatus 100 includes one imaging device 110, but the substrate processing apparatus 100 may include a plurality of imaging devices 110.

INDUSTRIAL APPLICABILITY The present invention is useful in an apparatus for processing a substrate and a method for processing a substrate. Therefore, the present invention has industrial applicability.

2: Processing chamber 3: Substrate holding part 41: First nozzle 41a: First discharge port 42: Second nozzle 42a: Second discharge port 43: Third nozzle 43a: Third discharge port 44: Fourth nozzle 44a: No. 4 discharge ports 100 : Substrate processing device 102 : Control unit 110 : Imaging device 120 : Photo sensor 121 : Photo sensor 130 : Capacitance sensor 131 : Capacitance sensor ADT : Additional delay time DT1 : First delay time DT2 : First 2 delay time DT3 : 3rd delay time DT4 : 4th delay time RL : Neighborhood SDT : Start delay time T1 : 1st predetermined time T2 : 2nd predetermined time T3 : 3rd predetermined time T4 : 4th predetermined time T5 : 1st 5 Predetermined time VA1: First valve VA2: Second valve VA3: Third valve VA4: Fourth valve W: Substrate

Claims (23)

A substrate processing method for processing a substrate with a processing liquid, the method comprising:
holding the substrate;
starting supply of the preceding processing liquid to the preceding nozzle and discharging the preceding processing liquid from the discharge port of the preceding nozzle toward the held substrate;
starting supply of the trailing processing liquid to the trailing nozzle and discharging the trailing processing liquid from the discharge port of the trailing nozzle toward the held substrate;
a detection step of detecting the start of discharge of the trailing treatment liquid from the discharge port of the trailing nozzle;
and a stopping step of stopping supply of the preceding processing liquid to the preceding nozzle in response to detecting the start of ejection of the subsequent processing liquid. 2. The substrate processing method according to claim 1, wherein in the detection step, it is detected that the subsequent processing liquid is discharged from the discharge port of the subsequent nozzle. 2. The substrate processing method according to claim 1, wherein in the detection step, it is detected that the trailing processing liquid has reached the discharge port of the trailing nozzle. 2. The substrate processing method according to claim 1, wherein in the detection step, it is detected that the trailing processing liquid has reached the vicinity of the discharge port of the trailing nozzle. The substrate processing method according to any one of claims 2 to 4, wherein in the detection step, the start of ejection of the subsequent processing liquid is detected by an imaging device. The substrate processing method according to any one of claims 2 to 4, wherein in the detection step, the start of ejection of the subsequent processing liquid is detected by a photosensor. 5. The substrate processing method according to claim 4, wherein in the detection step, the start of the discharge of the subsequent processing liquid is detected by a capacitance sensor. Any one of claims 1 to 7, wherein in the stopping step, the supply of the preceding processing liquid to the preceding nozzle is stopped after a predetermined period of time has elapsed after detecting the start of ejection of the subsequent processing liquid. Substrate processing method described in section. Based on the supply time indicating the time interval from the start of supply of the preceding processing liquid to the stop of supply of the preceding processing liquid in the stopping step, and the predetermined time that defines the time interval for supplying the preceding processing liquid, The substrate processing method according to any one of claims 1 to 8, further comprising the step of adjusting the supply start timing of the preceding processing liquid. The substrate processing method according to any one of claims 1 to 9, further comprising the step of obtaining timing for stopping supply of the preceding processing liquid. The substrate processing method according to any one of claims 1 to 10, further comprising the step of detecting the start of ejection of the preceding processing liquid from the ejection opening of the preceding nozzle. A substrate processing apparatus that processes a substrate with a processing liquid,
a substrate holding part that holds the substrate;
a preceding nozzle having a discharge port and discharging a preliminary processing liquid from the discharge port toward the substrate held by the substrate holding unit;
a preceding valve that controls supply of the preceding processing liquid to the preceding nozzle and stopping supply of the preceding processing liquid to the preceding nozzle;
a trailing nozzle having a discharge port and discharging a trailing processing liquid from the discharge port toward the substrate held by the substrate holding unit;
a trailing valve that controls supply of the trailing treatment liquid to the trailing nozzle and stopping supply of the trailing treatment liquid to the trailing nozzle;
a detection unit that detects the start of discharging the trailing processing liquid from the discharge port of the trailing nozzle;
A control unit that controls the preceding valve to start supplying the preceding processing liquid to the preceding nozzle, and then controls the succeeding valve to start supplying the subsequent processing liquid to the succeeding nozzle. Equipped with and
The control unit executes a closing operation control process that controls the preceding valve to stop supplying the preceding processing liquid in response to the detection unit detecting the start of discharge of the subsequent processing liquid. Substrate processing equipment. The substrate processing apparatus according to claim 12, wherein the detection unit detects that the trailing processing liquid is discharged from the discharge port of the trailing nozzle. The substrate processing apparatus according to claim 12, wherein the detection unit detects that the trailing processing liquid has reached the discharge port of the trailing nozzle. 13. The substrate processing apparatus according to claim 12, wherein the detection unit detects that the trailing processing liquid has reached the vicinity of a discharge port of the trailing nozzle. The substrate processing apparatus according to any one of claims 13 to 15, wherein the detection unit includes an imaging device that detects the start of ejection of the subsequent processing liquid. The substrate processing apparatus according to any one of claims 13 to 15, wherein the detection unit includes a photosensor that detects the start of ejection of the subsequent processing liquid. The substrate processing apparatus according to claim 15, wherein the detection unit includes a capacitance sensor that detects the start of the discharge of the subsequent processing liquid. The control unit controls the preceding valve to stop the supply of the preceding processing liquid after a predetermined period of time has elapsed after the detection unit detects the start of discharging the subsequent processing liquid. 19. The substrate processing apparatus according to any one of Item 18. The control unit includes a supply time indicating a time interval from the start of supply of the preceding processing liquid to the stop of supply of the preceding processing liquid by the closing operation control process, and a predetermined time interval for supplying the preceding processing liquid. The substrate processing apparatus according to any one of claims 12 to 19, wherein the supply start timing of the preceding processing liquid is adjusted based on the time. The substrate processing apparatus according to any one of claims 12 to 20, wherein the control unit acquires timing for stopping supply of the preceding processing liquid. The substrate processing apparatus according to any one of claims 12 to 21, wherein the detection unit detects the start of ejection of the preceding processing liquid from the ejection port of the preceding nozzle. further comprising a plurality of processing chambers accommodating the substrate holder, the leading nozzle, and the trailing nozzle,
The substrate processing apparatus according to any one of claims 12 to 22, wherein the control unit executes the closing operation control process for each of the processing chambers.

Images