TWI850239B - 蝕刻方法、及蝕刻裝置 - Google Patents

蝕刻方法、及蝕刻裝置 Download PDF

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Publication number
TWI850239B
TWI850239B TW108126310A TW108126310A TWI850239B TW I850239 B TWI850239 B TW I850239B TW 108126310 A TW108126310 A TW 108126310A TW 108126310 A TW108126310 A TW 108126310A TW I850239 B TWI850239 B TW I850239B
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Taiwan
Prior art keywords
etching
gas
oxygen
sin
plasma
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TW108126310A
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English (en)
Chinese (zh)
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TW202032656A (zh
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阿部拓也
三好秀典
清水昭貴
長倉幸一
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日商東京威力科創股份有限公司
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  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
TW108126310A 2018-07-30 2019-07-25 蝕刻方法、及蝕刻裝置 TWI850239B (zh)

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JP2018-142005 2018-07-30
JP2018142005 2018-07-30
JP2019055846A JP7209567B2 (ja) 2018-07-30 2019-03-25 エッチング方法およびエッチング装置
JP2019-055846 2019-03-25

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TW202032656A TW202032656A (zh) 2020-09-01
TWI850239B true TWI850239B (zh) 2024-08-01

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Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7738439B2 (ja) * 2020-12-15 2025-09-12 東京エレクトロン株式会社 エッチング方法およびエッチング装置
US20220293430A1 (en) * 2021-03-12 2022-09-15 Applied Materials, Inc. Isotropic silicon nitride removal
KR102779338B1 (ko) * 2021-10-06 2025-03-12 주식회사 테스 기판 처리 방법
TWI836713B (zh) * 2021-11-12 2024-03-21 南韓商Ｔｅｓ股份有限公司 基板處理方法
CN120345056A (zh) * 2023-03-17 2025-07-18 株式会社国际电气 蚀刻方法、半导体装置的制造方法、处理装置以及程序

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120077347A1 (en) * 2010-09-28 2012-03-29 Tokyo Electron Limited Selective etch process for silicon nitride
TW201330089A (zh) * 2011-09-28 2013-07-16 Tokyo Electron Ltd 蝕刻方法及裝置
US20140199851A1 (en) * 2013-01-16 2014-07-17 Applied Materials, Inc. Method of patterning a silicon nitride dielectric film
US20160260619A1 (en) * 2011-03-14 2016-09-08 Applied Materials, Inc. Methods for etch of sin films
US20180102256A1 (en) * 2016-10-07 2018-04-12 Applied Materials, Inc. SELECTIVE SiN LATERAL RECESS
US20180182777A1 (en) * 2016-12-27 2018-06-28 Applied Materials, Inc. 3d nand high aspect ratio structure etch
TW201825446A (zh) * 2016-12-30 2018-07-16 法商液態空氣喬治斯克勞帝方法研究開發股份有限公司 用於蝕刻半導體結構之含碘化合物

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Publication number Priority date Publication date Assignee Title
DE19706682C2 (de) * 1997-02-20 1999-01-14 Bosch Gmbh Robert Anisotropes fluorbasiertes Plasmaätzverfahren für Silizium
JP4221859B2 (ja) * 1999-02-12 2009-02-12 株式会社デンソー 半導体装置の製造方法
JP5206311B2 (ja) * 2008-10-24 2013-06-12 株式会社デンソー 半導体装置の製造方法
KR20140022917A (ko) * 2011-08-25 2014-02-25 다이니폰 스크린 세이조우 가부시키가이샤 패턴 형성 방법
JP6456131B2 (ja) * 2014-12-18 2019-01-23 キヤノン株式会社 基板の加工方法及び液体吐出ヘッドの製造方法
JP2018022830A (ja) * 2016-08-05 2018-02-08 東京エレクトロン株式会社 被処理体を処理する方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120077347A1 (en) * 2010-09-28 2012-03-29 Tokyo Electron Limited Selective etch process for silicon nitride
US20160260619A1 (en) * 2011-03-14 2016-09-08 Applied Materials, Inc. Methods for etch of sin films
TW201330089A (zh) * 2011-09-28 2013-07-16 Tokyo Electron Ltd 蝕刻方法及裝置
US20140199851A1 (en) * 2013-01-16 2014-07-17 Applied Materials, Inc. Method of patterning a silicon nitride dielectric film
US20180102256A1 (en) * 2016-10-07 2018-04-12 Applied Materials, Inc. SELECTIVE SiN LATERAL RECESS
US20180182777A1 (en) * 2016-12-27 2018-06-28 Applied Materials, Inc. 3d nand high aspect ratio structure etch
TW201825446A (zh) * 2016-12-30 2018-07-16 法商液態空氣喬治斯克勞帝方法研究開發股份有限公司 用於蝕刻半導體結構之含碘化合物

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TW202032656A (zh) 2020-09-01
JP7209567B2 (ja) 2023-01-20
SG10201906930VA (en) 2020-02-27
JP2020025070A (ja) 2020-02-13

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