TWI847471B - Display device - Google Patents
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- TWI847471B TWI847471B TW112100273A TW112100273A TWI847471B TW I847471 B TWI847471 B TW I847471B TW 112100273 A TW112100273 A TW 112100273A TW 112100273 A TW112100273 A TW 112100273A TW I847471 B TWI847471 B TW I847471B
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
- G02F1/13629—Multilayer wirings
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Abstract
Description
本發明是有關於一種光電裝置,且特別是有關於一種顯示裝置。The present invention relates to an optoelectronic device, and in particular to a display device.
反射式液晶顯示器具有節能環保的優勢,其利用環境光的反射或吸收而產生亮態或暗態,以達成顯示之目的,因此不需設置背光源。一般而言,反射式液晶顯示器的液晶層可以由上、下電極所形成的電場驅動而在穿透態與反射態之間進行切換,藉以實現各子畫素的暗態與亮態,其中各子畫素的有效區域是由上、下電極重疊的面積所決定,而上、下電極未重疊的區域即為無效區域。然而,礙於製程的線寬極限,無效區域相對於有效區域的比例隨著畫素密度(pixel per inch,PPI)的提高而愈來愈高,導致反射式液晶顯示器的反射率大幅下降。Reflective liquid crystal displays have the advantages of energy saving and environmental protection. They use the reflection or absorption of ambient light to produce a bright state or a dark state to achieve the purpose of display, so there is no need to set up a backlight source. Generally speaking, the liquid crystal layer of a reflective liquid crystal display can be driven by the electric field formed by the upper and lower electrodes to switch between the transmissive state and the reflective state to achieve the dark state and bright state of each sub-pixel. The effective area of each sub-pixel is determined by the overlapping area of the upper and lower electrodes, and the area where the upper and lower electrodes do not overlap is the ineffective area. However, due to the line width limitation of the process, the ratio of the ineffective area to the effective area becomes higher and higher with the increase of pixel density (pixel per inch, PPI), resulting in a significant decrease in the reflectivity of the reflective liquid crystal display.
本發明提供一種顯示裝置,具有提高的反射率。The present invention provides a display device with improved reflectivity.
本發明的一個實施例提出一種顯示裝置,包括:第一基板、第一導線層、第一電極、第二基板、顯示介質層以及第二電極。第一導線層位於第一基板上,且包括多條第一導線。第一電極位於第一基板之上,且包括彼此電性分離的多個第一下電極圖案及多個第一上電極圖案,其中多個第一下電極圖案及多個第一上電極圖案分別電性連接多條第一導線,多個第一下電極圖案之間具有多個第一間隙,且多個第一上電極圖案分別重疊多個第一間隙。第一導線層及第一電極位於第一基板與第二基板之間。顯示介質層位於第一電極與第二基板之間。第二電極位於顯示介質層與第二基板之間。An embodiment of the present invention provides a display device, comprising: a first substrate, a first conductive layer, a first electrode, a second substrate, a display medium layer and a second electrode. The first conductive layer is located on the first substrate and includes a plurality of first conductive wires. The first electrode is located on the first substrate and includes a plurality of first lower electrode patterns and a plurality of first upper electrode patterns that are electrically separated from each other, wherein the plurality of first lower electrode patterns and the plurality of first upper electrode patterns are electrically connected to the plurality of first conductive wires respectively, and there are a plurality of first gaps between the plurality of first lower electrode patterns, and the plurality of first upper electrode patterns overlap a plurality of first gaps respectively. The first conductive layer and the first electrode are located between the first substrate and the second substrate. The display medium layer is located between the first electrode and the second substrate. The second electrode is located between the display medium layer and the second substrate.
在本發明的一實施例中,上述的多條第一導線各自電性獨立。In an embodiment of the present invention, the plurality of first conductive lines are electrically independent of each other.
在本發明的一實施例中,上述的多個第一下電極圖案彼此分離。In one embodiment of the present invention, the plurality of first bottom electrode patterns are separated from each other.
在本發明的一實施例中,上述的多個第一上電極圖案彼此分離。In one embodiment of the present invention, the plurality of first upper electrode patterns are separated from each other.
在本發明的一實施例中,上述的多個第一下電極圖案與多個第一上電極圖案的延伸方向相同。In an embodiment of the present invention, the plurality of first lower electrode patterns and the plurality of first upper electrode patterns extend in the same direction.
在本發明的一實施例中,上述的第一下電極圖案與第一上電極圖案的重疊寬度為1.5μm至3μm。In an embodiment of the present invention, the overlapping width of the first lower electrode pattern and the first upper electrode pattern is 1.5 μm to 3 μm.
在本發明的一實施例中,相互重疊的第一上電極圖案與第一下電極圖案的電位不相同。In one embodiment of the present invention, the potentials of the first upper electrode pattern and the first lower electrode pattern that overlap each other are different.
在本發明的一實施例中,相鄰的第一下電極圖案與第一上電極圖案之間的間距大於0且小於10μm。In one embodiment of the present invention, a distance between adjacent first lower electrode patterns and first upper electrode patterns is greater than 0 and less than 10 μm.
在本發明的一實施例中,上述的第二電極包括多個第二下電極圖案,且多個第二下電極圖案的延伸方向垂直於多個第一下電極圖案的延伸方向。In an embodiment of the present invention, the second electrode includes a plurality of second lower electrode patterns, and the extension direction of the plurality of second lower electrode patterns is perpendicular to the extension direction of the plurality of first lower electrode patterns.
在本發明的一實施例中,上述的第二電極還包括多個第二上電極圖案,且多個第二上電極圖案與多個第二下電極圖案的延伸方向相同。In an embodiment of the present invention, the second electrode further includes a plurality of second upper electrode patterns, and the plurality of second upper electrode patterns and the plurality of second lower electrode patterns extend in the same direction.
在本發明的一實施例中,上述的多個第二下電極圖案之間具有多個第二間隙,且多個第二上電極圖案分別重疊多個第二間隙。In an embodiment of the present invention, a plurality of second gaps are provided between the plurality of second lower electrode patterns, and a plurality of second upper electrode patterns overlap the plurality of second gaps respectively.
在本發明的一實施例中,上述的顯示裝置還包括第二導線層,位於第二基板與顯示介質層之間,且包括多條第二導線,其中多個第二下電極圖案及多個第二上電極圖案分別電性連接多條第二導線。In an embodiment of the present invention, the display device further includes a second conductive line layer located between the second substrate and the display medium layer, and includes a plurality of second conductive lines, wherein a plurality of second lower electrode patterns and a plurality of second upper electrode patterns are electrically connected to the plurality of second conductive lines respectively.
為讓本發明的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。In order to make the above features and advantages of the present invention more clearly understood, embodiments are specifically cited below and described in detail with reference to the accompanying drawings.
在附圖中,為了清楚起見,放大了層、膜、面板、區域等的厚度。在整個說明書中,相同的附圖標記表示相同的元件。應當理解,當諸如層、膜、區域或基板的元件被稱為在另一元件「上」或「連接到」另一元件時,其可以直接在另一元件上或與另一元件連接,或者中間元件可以也存在。相反地,當元件被稱為「直接在另一元件上」或「直接連接到」另一元件時,不存在中間元件。如本文所使用的,「連接」可以指物理及/或電性連接。再者,「電性連接」或「耦接」可為二元件間存在其它元件。In the accompanying drawings, for the sake of clarity, the thickness of layers, films, panels, regions, etc. is magnified. Throughout the specification, the same figure markings represent the same elements. It should be understood that when an element such as a layer, film, region or substrate is referred to as being "on" or "connected to" another element, it can be directly on or connected to another element, or an intermediate element can also exist. On the contrary, when an element is referred to as being "directly on" or "directly connected to" another element, there is no intermediate element. As used herein, "connection" can refer to physical and/or electrical connection. Furthermore, "electrical connection" or "coupling" can be the presence of other elements between two elements.
應當理解,儘管術語「第一」、「第二」、「第三」等在本文中可以用於描述各種元件、部件、區域、層及/或部分,但是這些元件、部件、區域、層及/或部分不應受這些術語的限制。這些術語僅用於將一個元件、部件、區域、層或部分與另一個元件、部件、區域、層或部分區分開。因此,下面討論的第一「元件」、「部件」、「區域」、「層」或「部分」可以被稱為第二元件、部件、區域、層或部分而不脫離本文的教導。It should be understood that although the terms "first", "second", "third", etc. may be used herein to describe various elements, components, regions, layers and/or parts, these elements, components, regions, layers and/or parts should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or part from another element, component, region, layer or part. Therefore, the first "element", "component", "region", "layer" or "part" discussed below can be referred to as a second element, component, region, layer or part without departing from the teachings of this article.
這裡使用的術語僅僅是為了描述特定實施例的目的,而不是限制性的。如本文所使用的,除非內容清楚地指示,否則單數形式「一」、「一個」和「該」旨在包括複數形式,包括「至少一個」或表示「及/或」。如本文所使用的,術語「及/或」包括一個或多個相關所列項目的任何和所有組合。還應當理解,當在本說明書中使用時,術語「包含」及/或「包括」指定所述特徵、區域、整體、步驟、操作、元件及/或部件的存在,但不排除一個或多個其它特徵、區域、整體、步驟、操作、元件、部件及/或其組合的存在或添加。The terms used herein are for the purpose of describing specific embodiments only and are not restrictive. As used herein, unless the context clearly indicates otherwise, the singular forms "a", "an" and "the" are intended to include plural forms, including "at least one" or to mean "and/or". As used herein, the term "and/or" includes any and all combinations of one or more of the relevant listed items. It should also be understood that when used in this specification, the terms "include" and/or "include" specify the presence of the features, regions, wholes, steps, operations, elements and/or parts, but do not exclude the presence or addition of one or more other features, regions, wholes, steps, operations, elements, parts and/or combinations thereof.
此外,諸如「下」或「底部」和「上」或「頂部」的相對術語可在本文中用於描述一個元件與另一元件的關係,如圖所示。應當理解,相對術語旨在包括除了圖中所示的方位之外的裝置的不同方位。例如,如果一個附圖中的裝置翻轉,則被描述為在其他元件的「下」側的元件將被定向在其他元件的「上」側。因此,示例性術語「下」可以包括「下」和「上」的取向,取決於附圖的特定取向。類似地,如果一個附圖中的裝置翻轉,則被描述為在其它元件「下」或「下方」的元件將被定向為在其它元件「上方」。因此,示例性術語「下」或「下方」可以包括上方和下方的取向。In addition, relative terms such as "lower" or "bottom" and "upper" or "top" may be used herein to describe the relationship of one element to another element, as shown in the figures. It should be understood that relative terms are intended to include different orientations of the device in addition to the orientation shown in the figures. For example, if the device in one figure is flipped, the elements described as being on the "lower" side of the other elements will be oriented on the "upper" side of the other elements. Therefore, the exemplary term "lower" can include both "lower" and "upper" orientations, depending on the specific orientation of the figure. Similarly, if the device in one figure is flipped, the elements described as being "lower" or "below" other elements will be oriented as being "above" other elements. Therefore, the exemplary term "lower" or "below" can include both above and below orientations.
考慮到所討論的測量和與測量相關的誤差的特定數量(即,測量系統的限制),本文使用的「約」、「近似」、或「實質上」包括所述值和在本領域普通技術人員確定的特定值的可接受的偏差範圍內的平均值。例如,「約」可以表示在所述值的一個或多個標準偏差內,或±30%、±20%、±10%、±5%內。再者,本文使用的「約」、「近似」、或「實質上」可依光學性質、蝕刻性質或其它性質,來選擇較可接受的偏差範圍或標準偏差,而可不用一個標準偏差適用全部性質。As used herein, "about," "approximately," or "substantially" includes the stated value and the average value within an acceptable deviation range of the particular value determined by a person of ordinary skill in the art, taking into account the measurement in question and the particular amount of error associated with the measurement (i.e., the limitations of the measurement system). For example, "about" can mean within one or more standard deviations of the stated value, or within ±30%, ±20%, ±10%, ±5%. Furthermore, as used herein, "about," "approximately," or "substantially" can select a more acceptable deviation range or standard deviation depending on the optical property, etching property, or other property, and can apply to all properties without a single standard deviation.
除非另有定義,本文使用的所有術語(包括技術和科學術語)具有與本發明所屬領域的普通技術人員通常理解的相同的含義。將進一步理解的是,諸如在通常使用的字典中定義的那些術語應當被解釋為具有與它們在相關技術和本發明的上下文中的含義一致的含義,並且將不被解釋為理想化的或過度正式的意義,除非本文中明確地這樣定義。Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by ordinary technicians in the field to which the present invention belongs. It will be further understood that those terms as defined in commonly used dictionaries should be interpreted as having a meaning consistent with their meaning in the context of the relevant technology and the present invention, and will not be interpreted as an idealized or overly formal meaning unless expressly defined as such in this document.
本文參考作為理想化實施例的示意圖的截面圖來描述示例性實施例。因此,可以預期到作為例如製造技術及/或公差的結果的圖示的形狀變化。因此,本文所述的實施例不應被解釋為限於如本文所示的區域的特定形狀,而是包括例如由製造導致的形狀偏差。例如,示出或描述為平坦的區域通常可以具有粗糙及/或非線性特徵。此外,所示的銳角可以是圓的。因此,圖中所示的區域本質上是示意性的,並且它們的形狀不是旨在示出區域的精確形狀,並且不是旨在限制權利要求的範圍。Exemplary embodiments are described herein with reference to cross-sectional views that are schematic illustrations of idealized embodiments. Therefore, variations in the shapes of the illustrations as a result of, for example, manufacturing techniques and/or tolerances are to be expected. Therefore, the embodiments described herein should not be construed as limited to the specific shapes of the regions as shown herein, but rather include shape deviations that result, for example, from manufacturing. For example, a region shown or described as flat may typically have rough and/or nonlinear features. Furthermore, sharp corners shown may be rounded. Therefore, the regions shown in the figures are schematic in nature, and their shapes are not intended to illustrate the exact shape of the regions and are not intended to limit the scope of the claims.
圖1A是依照本發明一實施例的顯示裝置10的立體示意圖。圖1B是沿圖1A的剖面線A-A’所作的剖面示意圖。圖1C是圖1A的顯示裝置10的第一基板110、第一電極130以及第一導線層150的上視示意圖。圖1D是圖1A的顯示裝置10的第二基板120、第二電極140以及第二導線層160的上視示意圖。FIG. 1A is a three-dimensional schematic diagram of a
請參照圖1A至圖1D,顯示裝置10可以包括第一基板110以及第二基板120。在一些實施例中,第一基板110重疊第二基板120。在一些實施例中,第一基板110與第二基板120相對,且第一基板110的表面111面向第二基板120的表面121。在一些實施例中,第一基板110及第二基板120為透明基板。舉例而言,基板110及基板120的材質為玻璃、有機聚合物或其它適當材料。1A to 1D , the
在一些實施例中,顯示裝置10還包括第一電極130,且第一電極130設置於第一基板110之上。在一些實施例中,第一電極130位於第一基板110與第二基板120之間。第一電極130可以包括相互分離的多個條狀電極。在一些實施例中,第一電極130的多個條狀電極不完全屬於同一膜層。在一些實施例中,第一電極130的多個條狀電極分布於兩個膜層。In some embodiments, the
舉例而言,第一電極130包括第一下電極圖案層131以及第一上電極圖案層132。在一些實施例中,顯示裝置10還包括絕緣層I12,且絕緣層I12分隔第一下電極圖案層131與第一上電極圖案層132。For example, the
在一些實施例中,第一下電極圖案層131包括多個第一下電極圖案E1B,且多個第一下電極圖案E1B彼此分離。在一些實施例中,第一下電極圖案E1B具有條狀圖案,且多個第一下電極圖案E1B彼此平行地沿第一方向D1延伸。在一些實施例中,多個第一下電極圖案E1B之間具有多個間隙G1,且多個間隙G1的沿第二方向D2的寬度W1實質上相同。在一些實施例中,第一方向D1垂直於第二方向D2。在一些實施例中,間隙G1的寬度W1約為10μm。In some embodiments, the first lower
在一些實施例中,第一上電極圖案層132位於第一下電極圖案層131之上,且第一上電極圖案層132包括彼此分離的多個第一上電極圖案E1T。在一些實施例中,第一上電極圖案E1T具有條狀圖案,且第一上電極圖案E1T的延伸方向與第一下電極圖案E1B的延伸方向相同。在一些實施例中,多個第一上電極圖案E1T彼此平行地沿第一方向D1延伸。在一些實施例中,多個第一上電極圖案E1T之間具有多個間隙G2,且多個間隙G2的沿第二方向D2的寬度W2實質上相同。在一些實施例中,間隙G2的寬度W2約為10μm。In some embodiments, the first upper
在一些實施例中,多個第一上電極圖案E1T分別部分重疊多個第一下電極圖案E1B。在一些實施例中,第一下電極圖案E1B與第一上電極圖案E1T的重疊寬度W3約為1.5μm至3μm。在一些實施例中,相互重疊的第一上電極圖案E1T與第一下電極圖案E1B的電位不相同。在一些實施例中,第一上電極圖案E1T的電壓約為相互重疊的第一下電極圖案E1B的電壓的80%至95%。In some embodiments, the plurality of first upper electrode patterns E1T partially overlap the plurality of first lower electrode patterns E1B, respectively. In some embodiments, the overlapping width W3 of the first lower electrode pattern E1B and the first upper electrode pattern E1T is approximately 1.5 μm to 3 μm. In some embodiments, the potentials of the overlapping first upper electrode pattern E1T and the first lower electrode pattern E1B are different. In some embodiments, the voltage of the first upper electrode pattern E1T is approximately 80% to 95% of the voltage of the overlapping first lower electrode pattern E1B.
在一些實施例中,多個第一上電極圖案E1T分別部分重疊多個第一下電極圖案E1B之間的多個間隙G1。在一些實施例中,第一上電極圖案E1T在與其延伸方向(即第一方向D1)垂直的方向(即第二方向D2)上的側邊S1部分重疊第一下電極圖案E1B,且第一上電極圖案E1T的與側邊S1相對的側邊S2不重疊第一下電極圖案E1B。在一些實施例中,第一上電極圖案E1T的不重疊第一下電極圖案E1B的側邊S2與相鄰的第一下電極圖案E1B之間的間距W4大於0且小於10μm。也就是說,各第一上電極圖案E1T僅部分重疊對應的一個第一下電極圖案E1B,且不重疊其餘的第一下電極圖案E1B,以免產生寄生電容。在一些實施例中,第一上電極圖案E1T的不重疊第一下電極圖案E1B的側邊S2與相鄰的第一下電極圖案E1B之間的間距W4能夠進一步縮小至約2μm至5μm,藉以減小各子畫素的無效區域。在一些實施例中,間距W4為第一上電極圖案E1T與未重疊的第一下電極圖案E1B之間的最小間距。In some embodiments, the plurality of first upper electrode patterns E1T partially overlap the plurality of gaps G1 between the plurality of first lower electrode patterns E1B. In some embodiments, the side S1 of the first upper electrode pattern E1T in a direction (i.e., the second direction D2) perpendicular to its extension direction (i.e., the first direction D1) partially overlaps the first lower electrode pattern E1B, and the side S2 of the first upper electrode pattern E1T opposite to the side S1 does not overlap the first lower electrode pattern E1B. In some embodiments, the spacing W4 between the side S2 of the first upper electrode pattern E1T that does not overlap the first lower electrode pattern E1B and the adjacent first lower electrode pattern E1B is greater than 0 and less than 10 μm. That is, each first upper electrode pattern E1T only partially overlaps a corresponding first lower electrode pattern E1B, and does not overlap the rest of the first lower electrode pattern E1B, so as to avoid generating parasitic capacitance. In some embodiments, the distance W4 between the side S2 of the first upper electrode pattern E1T that does not overlap the first lower electrode pattern E1B and the adjacent first lower electrode pattern E1B can be further reduced to about 2 μm to 5 μm, so as to reduce the ineffective area of each sub-pixel. In some embodiments, the distance W4 is the minimum distance between the first upper electrode pattern E1T and the non-overlapping first lower electrode pattern E1B.
在一些實施例中,顯示裝置10還包括第一導線層150,且第一導線層150位於第一基板110上。在一些實施例中,顯示裝置10還包括絕緣層I11,且絕緣層I21分隔第一導線層150與第一電極130。在一些實施例中,第一導線層150位於第一基板110與第二基板120之間。在一些實施例中,第一導線層150包括多條第一導線152,且多條第一導線152各自電性獨立。在一些實施例中,多條第一導線152彼此實體分離。在一些實施例中,第一電極130的多個第一下電極圖案E1B及多個第一上電極圖案E1T分別電性連接多條第一導線152。In some embodiments, the
在一些實施例中,顯示裝置10還包括驅動元件181,且第一導線層150的多條第一導線152電連接至驅動元件181。在一些實施例中,驅動元件181設置於第一基板110上。在一些實施例中,顯示裝置10還包括多個接墊PD1,且多個接墊PD1分別電連接多條第一導線152與驅動元件181。如此一來,驅動元件181可以個別提供訊號至多個第一下電極圖案E1B及多個第一上電極圖案E1T。In some embodiments, the
在一些實施例中,顯示裝置10還包括顯示介質層170,且顯示介質層170位於第一電極130與第二基板120之間。在一些實施例中,第一電極130的第一上電極圖案層132位於第一下電極圖案層131與顯示介質層170之間。在一些實施例中,顯示介質層170包含顯示介質分子,例如膽固醇型液晶(cholesteric liquid crystal,CLC)分子。在一些實施例中,膽固醇型液晶分子可以在焦錐態(Focal conic state)、垂直態(Homeotropic State)以及平面態(Planar state)之間進行切換。當膽固醇型液晶分子處於焦錐態或垂直態時,顯示介質層170可以呈現穿透態。當膽固醇型液晶分子處於平面態時,顯示介質層170可以呈現反射態而反射進入的光線,且反射光線的波長可由膽固醇型液晶分子的螺距決定。In some embodiments, the
在一些實施例中,顯示裝置10還包括第二電極140,且第二電極140位於顯示介質層170與第二基板120之間。在一些實施例中,顯示介質層170位於第一電極130與第二電極140之間。第二電極140可以包括相互分離的多個條狀電極,且第二電極140的延伸方向相交於第一電極130的延伸方向。如此一來,第一電極130與第二電極140重疊的區域能夠驅動顯示介質層170中的顯示介質分子改變方向,進而作為顯示裝置10的個別子畫素的有效區域。在一些實施例中,第二電極140的多個條狀電極不完全屬於同一膜層。在一些實施例中,第二電極140的多個條狀電極分布於兩個膜層。In some embodiments, the
舉例而言,第二電極140包括第二下電極圖案層141以及第二上電極圖案層142。在一些實施例中,第二電極140的第二上電極圖案層142位於第二下電極圖案層141與顯示介質層170之間。在一些實施例中,顯示裝置10還包括絕緣層I22,且絕緣層I22分隔第二下電極圖案層141與第二上電極圖案層142。For example, the
在一些實施例中,第二下電極圖案層141包括多個第二下電極圖案E2B,且多個第二下電極圖案E2B彼此分離。在一些實施例中,第二下電極圖案E2B具有條狀圖案,且多個第二下電極圖案E2B彼此平行地沿第二方向D2延伸。在一些實施例中,第二下電極圖案E2B的延伸方向與第一下電極圖案E1B的延伸方向相交。在一些實施例中,多個第二下電極圖案E2B之間具有多個間隙G3,且多個間隙G3的沿第一方向D1的寬度W5實質上相同。在一些實施例中,間隙G3的寬度W5約為10μm。In some embodiments, the second lower
在一些實施例中,第二上電極圖案層142位於第二下電極圖案層141之上,且第二上電極圖案層142包括彼此分離的多個第二上電極圖案E2T。在一些實施例中,第二上電極圖案E2T具有條狀圖案,且第二上電極圖案E2T的延伸方向與第二下電極圖案E2B的延伸方向相同。在一些實施例中,多個第二上電極圖案E2T彼此平行地沿第二方向D2延伸。在一些實施例中,第二上電極圖案E2T的延伸方向與第一上電極圖案E1T的延伸方向相交。在一些實施例中,多個第二上電極圖案E2T之間具有多個間隙G4,且多個間隙G4的沿第一方向D1的寬度W6實質上相同。在一些實施例中,間隙G4的寬度W6約為10μm。In some embodiments, the second upper
在一些實施例中,多個第二上電極圖案E2T分別部分重疊多個第二下電極圖案E2B。在一些實施例中,第二下電極圖案E2B與第二上電極圖案E2T的重疊寬度W7約為1.5μm至3μm。在一些實施例中,相互重疊的第二上電極圖案E2T與第二下電極圖案E2B的電位不相同。在一些實施例中,第二上電極圖案E2T的電壓約為相互重疊的第二下電極圖案E2B的電壓的80%至95%。In some embodiments, the plurality of second upper electrode patterns E2T partially overlap the plurality of second lower electrode patterns E2B. In some embodiments, the overlapping width W7 of the second lower electrode pattern E2B and the second upper electrode pattern E2T is about 1.5 μm to 3 μm. In some embodiments, the potentials of the overlapping second upper electrode pattern E2T and the second lower electrode pattern E2B are different. In some embodiments, the voltage of the second upper electrode pattern E2T is about 80% to 95% of the voltage of the overlapping second lower electrode pattern E2B.
在一些實施例中,相互重疊的第一上電極圖案E1T與第一下電極圖案E1B於顯示介質層170中形成的最大電場強度實質上相同。在一些實施例中,相互重疊的第二上電極圖案E2T與第二下電極圖案E2B於顯示介質層170中形成的最大電場強度實質上相同。In some embodiments, the maximum electric field strength formed by the overlapping first upper electrode pattern E1T and the first lower electrode pattern E1B in the
在一些實施例中,多個第二上電極圖案E2T分別部分重疊多個第二下電極圖案E2B之間的多個間隙G3。在一些實施例中,第二上電極圖案E2T在與其延伸方向(即第二方向D2)垂直的方向(即第一方向D1)上的側邊S3部分重疊第二下電極圖案E2B,且第二上電極圖案E2T的與側邊S3相對的側邊S4不重疊第二下電極圖案E2B。在一些實施例中,第二上電極圖案E2T的不重疊第二下電極圖案E2B的側邊S4與相鄰的第二下電極圖案E2B之間的間距W8大於0且小於10μm。也就是說,各第二上電極圖案E2T僅部分重疊對應的一個第二下電極圖案E2B,且不重疊其餘的第二下電極圖案E2B,以免產生寄生電容。在一些實施例中,第二上電極圖案E2T的不重疊第二下電極圖案E2B的側邊S4與相鄰的第二下電極圖案E2B之間的間距W8能夠進一步縮小至約2μm至5μm,藉以減小各子畫素的無效區域。在一些實施例中,間距W8為第二上電極圖案E2T與未重疊的第二下電極圖案E2B之間的最小間距。In some embodiments, the plurality of second upper electrode patterns E2T partially overlap the plurality of gaps G3 between the plurality of second lower electrode patterns E2B. In some embodiments, the side S3 of the second upper electrode pattern E2T in the direction (i.e., the first direction D1) perpendicular to the extension direction (i.e., the second direction D2) partially overlaps the second lower electrode pattern E2B, and the side S4 of the second upper electrode pattern E2T opposite to the side S3 does not overlap the second lower electrode pattern E2B. In some embodiments, the spacing W8 between the side S4 of the second upper electrode pattern E2T that does not overlap the second lower electrode pattern E2B and the adjacent second lower electrode pattern E2B is greater than 0 and less than 10 μm. That is, each second upper electrode pattern E2T only partially overlaps a corresponding second lower electrode pattern E2B, and does not overlap the rest of the second lower electrode pattern E2B, so as to avoid generating parasitic capacitance. In some embodiments, the distance W8 between the side S4 of the second upper electrode pattern E2T that does not overlap the second lower electrode pattern E2B and the adjacent second lower electrode pattern E2B can be further reduced to about 2 μm to 5 μm, so as to reduce the ineffective area of each sub-pixel. In some embodiments, the distance W8 is the minimum distance between the second upper electrode pattern E2T and the non-overlapping second lower electrode pattern E2B.
由於第一上電極圖案E1T與第一下電極圖案E1B之間的間距W4以及第二上電極圖案E2T與第二下電極圖案E2B之間的間距W8能夠進一步縮小,因此,第一電極130及第二電極140未相互重疊的無效區域相對於第一電極130與第二電極140相互重疊的有效區域的比例能夠進一步降低,藉以提高顯示裝置10的反射率。Since the distance W4 between the first upper electrode pattern E1T and the first lower electrode pattern E1B and the distance W8 between the second upper electrode pattern E2T and the second lower electrode pattern E2B can be further reduced, the ratio of the ineffective area where the
在一些實施例中,顯示裝置10還包括第二導線層160,第二導線層160設置於第二基板120上,且第二導線層160位於第一基板110與第二基板120之間。在一些實施例中,第二導線層160位於第二電極140與第二基板120之間。在一些實施例中,顯示裝置10還包括絕緣層I21,且絕緣層I21分隔第二導線層160與第二電極140。在一些實施例中,第二導線層160包括多條第二導線162,且多條第二導線162各自電性獨立。在一些實施例中,多條第二導線162彼此實體分離。在一些實施例中,第二電極140的多個第二下電極圖案E2B及多個第二上電極圖案E2T分別電性連接多條第二導線162。在一些實施例中,顯示裝置10還包括設置於第二基板120的多個接墊PD22,且多個接墊PD22分別電連接多條第二導線162。In some embodiments, the
在一些實施例中,第一下電極圖案層131、第一上電極圖案層132、第二下電極圖案層141以及第二上電極圖案層142的材質為透明導電材料,例如銦錫氧化物、銦鋅氧化物、鋁錫氧化物、鋁鋅氧化物、銦鎵鋅氧化物或其他合適的透明導電材料。在一些實施例中,絕緣層I11、I12、I21、I22的材質可以包括透明的絕緣材料,例如氧化矽、氮化矽、氮氧化矽、上述材料的疊層或其他適合的材料。在一些實施例中,第一導線層150及第二導線層160的材質為導電性良好的金屬,例如鋁、鉬、鈦、銅等金屬,或是上述金屬之合金或疊層,但本發明不限於此。In some embodiments, the materials of the first lower
在一些實施例中,顯示裝置10還包括驅動元件182,且第二導線層160的多條第二導線162電連接至驅動元件182。在一些實施例中,驅動元件182設置於第一基板110上,且驅動元件181、182分別設置於第一基板110的不同側邊。在一些實施例中,顯示裝置10還包括多個接墊PD21,且多個接墊PD21分別電連接多條第二導線162與驅動元件182。舉例而言,顯示裝置10還包括多個連接件AF,且當第一基板110與第二基板120對組而構成如圖1B所示的顯示結構時,多個連接件AF可以分別電連接第一基板110上的多個接墊PD21與第二基板120上的多個接墊PD22,使得多條第二導線162能夠分別通過多個接墊PD22、多個連接件AF以及多個接墊PD21而電連接至驅動元件182。如此一來,驅動元件182可以個別提供訊號至多個第二下電極圖案E2B及多個第二上電極圖案E2T。In some embodiments, the
在一些實施例中,接墊PD1、PD21、PD22的材質為導電性良好的金屬,例如鋁、鉬、鈦、銅等金屬,或是上述金屬之合金或疊層,但本發明不限於此。在一些實施例中,連接件AF的材質包括異方性導電膜(anisotropic conductive film,ACF)。In some embodiments, the material of the pads PD1, PD21, PD22 is a metal with good electrical conductivity, such as aluminum, molybdenum, titanium, copper, etc., or an alloy or a laminate of the above metals, but the present invention is not limited thereto. In some embodiments, the material of the connector AF includes anisotropic conductive film (ACF).
在一些實施例中,顯示裝置10包括三組如圖1B所示的顯示結構,上述的三組顯示結構可以在垂直方向上層疊,且三組顯示結構中第一電極130與第二電極140重疊的區域相互重疊。另外,還可以調整各組顯示結構中的顯示介質層170的顯示介質分子,使得各組顯示結構的顯示介質層170的反射光波長不同。如此一來,各組顯示結構中第一電極130與第二電極140重疊的區域可作為顯示裝置10的一個子畫素,且三組顯示結構中相互重疊的子畫素可以構成顯示裝置10的一個畫素,使得顯示裝置10能夠以「疊加型」的原色系統實現全彩化。In some embodiments, the
以下,使用圖2A至圖9繼續說明本發明的其他實施例,並且,沿用圖1A至圖1D的實施例的元件標號與相關內容,其中,採用相同的標號來表示相同或近似的元件,並且省略了相同技術內容的說明。關於省略部分的說明,可參考圖1A至圖1D的實施例,在以下的說明中不再重述。In the following, other embodiments of the present invention are further described using FIGS. 2A to 9 , and the component numbers and related contents of the embodiments of FIGS. 1A to 1D are used, wherein the same numbers are used to represent the same or similar components, and the description of the same technical contents is omitted. For the description of the omitted parts, reference can be made to the embodiments of FIGS. 1A to 1D , and they will not be repeated in the following description.
圖2A至圖6B是本發明一實施例的顯示裝置10的第一電極130的製造方法的步驟流程的剖面示意圖。在圖2A至圖6B中,圖2B是沿圖2A的剖面線B-B’所作的剖面示意圖;圖3B是沿圖3A的剖面線C-C’所作的剖面示意圖;圖4B是沿圖4A的剖面線D-D’所作的剖面示意圖;圖5B是沿圖5A的剖面線E-E’所作的剖面示意圖;圖6B是沿圖6A的剖面線F-F’所作的剖面示意圖。FIG. 2A to FIG. 6B are cross-sectional schematic diagrams of the steps of the manufacturing method of the
首先,請參照圖2A及圖2B,形成第一導線層150於第一基板110上。第一導線層150可以包括多條第一導線152,且多條第一導線152彼此分離。在一些實施例中,多條第一導線152彼此平行地沿相同方向延伸。在一些實施例中,還可以形成多個接墊PD1及多個接墊PD21於第一基板110上,且多條第一導線152分別連接多個接墊PD1。First, referring to FIG. 2A and FIG. 2B , a first
接著,請參照圖3A及圖3B,形成絕緣層I11於第一導線層150及第一基板110上。絕緣層I11可以具有多個通孔V1,且多個通孔V1分別重疊例如奇數條的第一導線152,使得奇數條的第一導線152的一部分區域被露出。3A and 3B, an insulating layer I11 is formed on the first
接著,請參照圖4A及圖4B,形成第一下電極圖案層131於絕緣層I11上,第一下電極圖案層131可以包括多個第一下電極圖案E1B,且多個第一下電極圖案E1B分別重疊絕緣層I11的多個通孔V1,使得多個第一下電極圖案E1B能夠分別通過通孔V1電性連接奇數條的第一導線152。Next, referring to FIG. 4A and FIG. 4B , a first lower
接著,請參照圖5A及圖5B,形成絕緣層I12於第一下電極圖案層131及絕緣層I11上。接著,形成貫穿絕緣層I11及絕緣層I12的多個通孔V2,且多個通孔V2分別重疊偶數條的第一導線152,使得偶數條的第一導線152的一部分區域被露出。在一些實施例中,當絕緣層I11的多個通孔V1分別露出偶數條的第一導線152時,則多個通孔V2分別露出奇數條的第一導線152。Next, referring to FIG. 5A and FIG. 5B , an insulating layer I12 is formed on the first lower
在一些實施例中,在形成多個通孔V2的同時還可以形成多個通孔V3,多個通孔V3貫穿絕緣層I11及絕緣層I12,且多個通孔V3分別重疊多個接墊PD1及多個接墊PD21。換句話說,多個通孔V3分別露出多個接墊PD1及多個接墊PD21。In some embodiments, multiple through holes V3 may be formed while multiple through holes V2 are formed, and the multiple through holes V3 penetrate the insulating layer I11 and the insulating layer I12, and the multiple through holes V3 overlap the multiple pads PD1 and the multiple pads PD21, respectively. In other words, the multiple through holes V3 expose the multiple pads PD1 and the multiple pads PD21, respectively.
接著,請參照圖6A及圖6B,形成第一上電極圖案層132於絕緣層I12上,第一上電極圖案層132可以包括多個第一上電極圖案E1T,且多個第一上電極圖案E1T分別重疊多個通孔V2,使得多個第一上電極圖案E1T能夠分別通過通孔V2電性連接偶數條的第一導線152。Next, referring to FIG. 6A and FIG. 6B , a first upper
在一些實施例中,可以視需要使第一上電極圖案E1T的一側部分重疊對應的第一下電極圖案E1B,且使第一上電極圖案E1T的不重疊第一下電極圖案E1B的另一側與相鄰的第一下電極圖案E1B之間的間距小於10μm。舉例而言,藉由調整用於形成第一上電極圖案E1T的光罩及用於形成第一下電極圖案E1B的光罩的相對位置,即能夠輕易地使第一上電極圖案E1T的不重疊第一下電極圖案E1B的另一側與未重疊的第一下電極圖案E1B之間的最小間距小於10μm,例如此最小間距約為2μm至5μm,藉以減小各子畫素的無效區域。In some embodiments, one side of the first upper electrode pattern E1T may partially overlap the corresponding first lower electrode pattern E1B as needed, and the distance between the other side of the first upper electrode pattern E1T not overlapping the first lower electrode pattern E1B and the adjacent first lower electrode pattern E1B may be less than 10 μm. For example, by adjusting the relative positions of the mask used to form the first upper electrode pattern E1T and the mask used to form the first lower electrode pattern E1B, it is possible to easily make the minimum distance between the other side of the first upper electrode pattern E1T that does not overlap the first lower electrode pattern E1B and the non-overlapping first lower electrode pattern E1B less than 10μm, for example, this minimum distance is about 2μm to 5μm, thereby reducing the ineffective area of each sub-pixel.
在一些實施例中,第二電極140的製造方法類似於上述的第一電極130的製造方法,於此不再重述。In some embodiments, the manufacturing method of the
在一些實施例中,還可以設置驅動元件181及驅動元件182於第一基板110上,且驅動元件181的多個引腳PN1可以分別穿過多個通孔V3而電連接多個接墊PD1,驅動元件182的多個引腳PN2(請參照圖1B)也可以分別穿過多個通孔V3而電連接多個接墊PD21。In some embodiments, a driving
圖7是依照本發明另一實施例的第一基板110、第一電極130、第一導線層750以及驅動元件181的上視示意圖。與如圖1C所示的第一導線層150相比,圖7所示的第一導線層750的不同之處主要在於:第一導線層750的多條第一導線752還分別延伸於第一電極130的多個第一下電極圖案E1B及多個第一上電極圖案E1T下方,藉以加快第一下電極圖案E1B及第一上電極圖案E1T的訊號傳送速度,從而減小各個子畫素的訊號延遲。在一些實施例中,第一導線752的線寬W9為5μm至10μm。FIG. 7 is a top view schematic diagram of a
圖8是依照本發明另一實施例的第二基板120、第二電極140以及第二導線層860的上視示意圖。與如圖1D所示的第二導線層160相比,圖8所示的第二導線層860的不同之處主要在於:第二導線層860的多條第二導線862還分別延伸於第二電極140的多個第二下電極圖案E2B及多個第二上電極圖案E2T下方,藉以加快第二下電極圖案E2B及第二上電極圖案E2T的訊號傳送速度,從而減小各個子畫素的訊號延遲。在一些實施例中,第二導線862的線寬W10為5μm至10μm。FIG8 is a top view schematic diagram of the
圖9是依照本發明一實施例的顯示裝置20的剖面示意圖。顯示裝置20包括:第一基板110、第二基板120、第一電極130、第二電極140、顯示介質層170、驅動元件182、接墊PD21、PD22、連接件AF以及絕緣層I11、I12、I21、I22,其中第一電極130包括第一下電極圖案層131以及第一上電極圖案層132,第一下電極圖案層131包括多個第一下電極圖案E1B,且第一上電極圖案層132包括多個第一上電極圖案E1T;第二電極140包括第二下電極圖案層141以及第二上電極圖案層142,第二下電極圖案層141包括多個第二下電極圖案E2B,且第二上電極圖案層142包括多個第二上電極圖案E2T。FIG9 is a cross-sectional schematic diagram of a display device 20 according to an embodiment of the present invention. The display device 20 includes: a
與如圖1B所示的顯示裝置10相比,圖9所示的顯示裝置20的不同之處主要在於:顯示裝置20的絕緣層I12僅覆蓋第一下電極圖案E1B的與第一上電極圖案E1T重疊的部分來實現第一下電極圖案E1B與第一上電極圖案E1T的電性分離。在一些實施例中,絕緣層I12包括相互分離的多個條狀絕緣圖案IP。在一些實施例中,多個條狀絕緣圖案IP的延伸方向平行於第一下電極圖案E1B及第一上電極圖案E1T的延伸方向。在一些實施例中,各個條狀絕緣圖案IP部分重疊對應的第一下電極圖案E1B,且各個條狀絕緣圖案IP部分重疊對應的第一上電極圖案E1T。Compared with the
綜上所述,本發明的顯示裝置藉由縮小第一上電極圖案與未重疊的第一下電極圖案之間的最小間距,且縮小第二上電極圖案與未重疊的第二下電極圖案之間的最小間距,來提高第一電極與第二電極相互重疊的有效區域相對於第一電極與第二電極未相互重疊的無效區域的比例,從而提高顯示裝置的反射率。In summary, the display device of the present invention increases the ratio of the effective area where the first electrode and the second electrode overlap with each other to the ineffective area where the first electrode and the second electrode do not overlap with each other by reducing the minimum distance between the first upper electrode pattern and the non-overlapping first lower electrode pattern, and reducing the minimum distance between the second upper electrode pattern and the non-overlapping second lower electrode pattern, thereby improving the reflectivity of the display device.
雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明的精神和範圍內,當可作些許的更動與潤飾,故本發明的保護範圍當視後附的申請專利範圍所界定者為準。Although the present invention has been disclosed as above by the embodiments, they are not intended to limit the present invention. Any person with ordinary knowledge in the relevant technical field can make some changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention shall be defined by the scope of the attached patent application.
10, 20:顯示裝置
110:第一基板
111:表面
120:第二基板
121:表面
130:第一電極
131:第一下電極圖案層
132:第一上電極圖案層
140:第二電極
141:第二下電極圖案層
142:第二上電極圖案層
150, 750:第一導線層
152, 752:第一導線
160, 860:第二導線層
162, 862:第二導線
170:顯示介質層
181, 182:驅動元件
A-A’, B-B’, C-C’, D-D’, E-E’, F-F’:剖面線
AF:連接件
D1:第一方向
D2:第二方向
E1B:第一下電極圖案
E1T:第一上電極圖案
E2B:第二下電極圖案
E2T:第二上電極圖案
G1, G2, G3, G4:間隙
I11, I12, I21, I22:絕緣層
IP:條狀絕緣圖案
PD1, PD21, PD22:接墊
PN1, PN2:引腳
S1, S2, S3, S4:側邊
V1, V2, V3:通孔
W1, W2, W3, W5, W6, W7:寬度
W4, W8:間距
10, 20: display device
110: first substrate
111: surface
120: second substrate
121: surface
130: first electrode
131: first lower electrode pattern layer
132: first upper electrode pattern layer
140: second electrode
141: second lower electrode pattern layer
142: second upper
圖1A是依照本發明一實施例的顯示裝置10的立體示意圖。
圖1B是沿圖1A的剖面線A-A’所作的剖面示意圖。
圖1C是圖1A的顯示裝置10的第一基板110、第一電極130以及第一導線層150的上視示意圖。
圖1D是圖1A的顯示裝置10的第二基板120、第二電極140以及第二導線層160的上視示意圖。
圖2A至圖6B是本發明一實施例的顯示裝置10的第一電極130的製造方法的步驟流程的剖面示意圖。
圖7是依照本發明另一實施例的第一基板110、第一電極130、第一導線層750以及驅動元件181的上視示意圖。
圖8是依照本發明另一實施例的第二基板120、第二電極140以及第二導線層860的上視示意圖。
圖9是依照本發明一實施例的顯示裝置20的剖面示意圖。
FIG. 1A is a three-dimensional schematic diagram of a
10:顯示裝置 10: Display device
110:第一基板 110: First substrate
111:表面 111: Surface
120:第二基板 120: Second substrate
121:表面 121: Surface
130:第一電極 130: First electrode
131:第一下電極圖案層 131: First lower electrode pattern layer
132:第一上電極圖案層 132: First upper electrode pattern layer
140:第二電極 140: Second electrode
141:第二下電極圖案層 141: Second lower electrode pattern layer
142:第二上電極圖案層 142: Second upper electrode pattern layer
170:顯示介質層 170: Display media layer
182:驅動元件 182: Driving element
AF:連接件 AF: Connectors
D1:第一方向 D1: First direction
D2:第二方向 D2: Second direction
E1B:第一下電極圖案 E1B: The first lower electrode pattern
E1T:第一上電極圖案 E1T: first upper electrode pattern
E2B:第二下電極圖案 E2B: Second lower electrode pattern
E2T:第二上電極圖案 E2T: Second upper electrode pattern
G1:間隙 G1: Gap
I11,I12,I21,I22:絕緣層 I11, I12, I21, I22: Insulation layer
PD21,PD22:接墊 PD21,PD22: pad
PN2:引腳 PN2: Pin
W1:寬度 W1: Width
Claims (12)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
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TW112100273A TWI847471B (en) | 2023-01-04 | 2023-01-04 | Display device |
CN202310991693.4A CN116991005A (en) | 2023-01-04 | 2023-08-08 | Display device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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TW112100273A TWI847471B (en) | 2023-01-04 | 2023-01-04 | Display device |
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TWI847471B true TWI847471B (en) | 2024-07-01 |
TW202429176A TW202429176A (en) | 2024-07-16 |
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CN (1) | CN116991005A (en) |
TW (1) | TWI847471B (en) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI237720B (en) * | 2001-02-06 | 2005-08-11 | Seiko Epson Corp | Liquid crystal device, method of manufacturing liquid crystal device and electronic apparatus |
TWI285768B (en) * | 2000-05-25 | 2007-08-21 | Seiko Epson Corp | Liquid crystal device, method for making the same, and electronic apparatus |
-
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- 2023-01-04 TW TW112100273A patent/TWI847471B/en active
- 2023-08-08 CN CN202310991693.4A patent/CN116991005A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI285768B (en) * | 2000-05-25 | 2007-08-21 | Seiko Epson Corp | Liquid crystal device, method for making the same, and electronic apparatus |
TWI237720B (en) * | 2001-02-06 | 2005-08-11 | Seiko Epson Corp | Liquid crystal device, method of manufacturing liquid crystal device and electronic apparatus |
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TW202429176A (en) | 2024-07-16 |
CN116991005A (en) | 2023-11-03 |
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