TWI846161B - System and device for adjusting chuck deformation - Google Patents

System and device for adjusting chuck deformation Download PDF

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Publication number
TWI846161B
TWI846161B TW111144617A TW111144617A TWI846161B TW I846161 B TWI846161 B TW I846161B TW 111144617 A TW111144617 A TW 111144617A TW 111144617 A TW111144617 A TW 111144617A TW I846161 B TWI846161 B TW I846161B
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chuck
deformation
deformable units
controlled voltage
deformable
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TW111144617A
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Chinese (zh)
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TW202331924A (en
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馬雙義
王晨
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中國大陸商拓荊鍵科(海寧)半導體設備有限公司
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Abstract

本申請案係關於一種調整卡盤形變之系統。在本申請案之一實施例中,所述調整卡盤形變之系統包括:卡盤,其具有吸附面,用以吸附晶圓;卡盤形變調整裝置,其位於所述吸附面下方,且具有多個可形變單元,每一所述可形變單元基於受控電壓而在所述吸附面之平面方向上產生對應於所述受控電壓大小的形變;及處理器,其基於晶圓翹曲之資料,判定所述多個可形變單元之形變量,使對應於晶圓翹曲程度之受控電壓輸入至所述多個可形變單元,以使所述吸附面產生形變。The present application relates to a system for adjusting chuck deformation. In one embodiment of the present application, the system for adjusting chuck deformation includes: a chuck having an adsorption surface for adsorbing a wafer; a chuck deformation adjustment device located below the adsorption surface and having a plurality of deformable units, each of which generates a deformation corresponding to the magnitude of the controlled voltage in the plane direction of the adsorption surface based on a controlled voltage; and a processor, which determines the deformation amount of the plurality of deformable units based on wafer warp data, and inputs a controlled voltage corresponding to the degree of wafer warp to the plurality of deformable units, so that the adsorption surface is deformed.

Description

調整卡盤形變之系統及裝置System and device for adjusting chuck deformation

本申請案大體上係關於半導體處理設備領域,且更具體而言,係關於一種調整卡盤形變之系統及裝置。This application relates generally to the field of semiconductor processing equipment and, more particularly, to a system and apparatus for adjusting chuck deformation.

晶圓直接接合技術已應用在積體電路製造、微機電系統(MEMS)封裝及多功能晶片整合等領域。晶圓直接接合為將兩片表面清潔、原子級平整之同質或異質晶圓在一定條件下接合為一體之技術。Wafer direct bonding technology has been applied in the fields of integrated circuit manufacturing, micro-electromechanical system (MEMS) packaging and multi-functional chip integration. Wafer direct bonding is a technology that bonds two homogeneous or heterogeneous wafers with clean surfaces and atomically flat surfaces into one under certain conditions.

晶圓經過多道工序後,表面會出現不同程度之翹曲變形。直接接合會導致晶圓在接合完成後出現偏差。對於上述偏差,可以藉由下卡盤變形拉近上、下兩晶圓之翹曲程度來進行補償。目前,卡盤變形係藉由控制卡盤下方氣囊內壓力來實現的,但此種氣囊控制方式僅能使晶圓中心區域翹曲變形,控制精度亦較低,且氣囊容易漏氣。After the wafer has gone through multiple processes, the surface will be warped to varying degrees. Direct bonding will cause the wafer to deviate after bonding. The above deviation can be compensated by deforming the lower chuck to bring the warp of the upper and lower wafers closer. Currently, chuck deformation is achieved by controlling the internal pressure of the airbag under the chuck, but this airbag control method can only cause the center area of the wafer to warp and deform, the control accuracy is also low, and the airbag is prone to leaking.

本申請案提供一種調整卡盤形變之系統及裝置,藉由卡盤內嵌之凸點狀壓電陶瓷來實現卡盤變形,可以精確控制任意凸點形變及形變時間,適應於晶圓之各種翹曲變形,且控制精度高。This application provides a system and device for adjusting the deformation of a chuck, which realizes the deformation of the chuck by means of a bump-shaped piezoelectric ceramic embedded in the chuck. The deformation and deformation time of any bump can be accurately controlled, and the system is adapted to various warp deformations of the wafer with high control accuracy.

在一態樣中,本申請案提供一種調整卡盤形變之系統,其包括:卡盤,其具有吸附面,用以吸附晶圓;卡盤形變調整裝置,其位於所述吸附面下方,且具有多個可形變單元,每一所述可形變單元基於受控電壓而在所述吸附面之平面方向上產生對應於所述受控電壓大小之形變;及處理器,其基於晶圓翹曲之資料,判定所述多個可形變單元之形變量,使對應於晶圓翹曲程度之受控電壓輸入至所述多個可形變單元,以使所述吸附面產生形變。In one embodiment, the present application provides a system for adjusting chuck deformation, comprising: a chuck having an adsorption surface for adsorbing a wafer; a chuck deformation adjustment device, which is located below the adsorption surface and has a plurality of deformable units, each of which generates a deformation corresponding to the magnitude of the controlled voltage in the planar direction of the adsorption surface based on a controlled voltage; and a processor, which determines the deformation amount of the plurality of deformable units based on wafer warp data, so that a controlled voltage corresponding to the degree of wafer warp is input to the plurality of deformable units to cause the adsorption surface to deform.

根據本申請案之實施例,所述多個可形變單元包含壓電陶瓷。According to an embodiment of the present application, the plurality of deformable units include piezoelectric ceramics.

根據本申請案之實施例,所述壓電陶瓷包含無鉛之碳酸鋇基材料。According to an embodiment of the present application, the piezoelectric ceramic comprises a lead-free barium carbonate-based material.

根據本申請案之實施例,每一所述可形變單元呈凸點狀。According to an embodiment of the present application, each of the deformable units is in the shape of a convex point.

根據本申請案之實施例,所述多個可形變單元呈陣列排列。According to an embodiment of the present application, the plurality of deformable units are arranged in an array.

根據本申請案之實施例,所述卡盤包含碳化矽。According to an embodiment of the present application, the chuck comprises silicon carbide.

根據本申請案之實施例,所述系統進一步包括:匹配網路,其連接至所述多個可形變單元,並基於所述處理器判定之形變量,輸出所述受控電壓至所述多個可形變單元。According to an embodiment of the present application, the system further includes: a matching network, which is connected to the multiple deformable units and outputs the controlled voltage to the multiple deformable units based on the deformation amount determined by the processor.

根據本申請案之實施例,所述卡盤形變調整裝置進一步包括基板,其中所述多個可形變單元位於所述基板上。According to an embodiment of the present application, the chuck deformation adjustment device further includes a substrate, wherein the plurality of deformable units are located on the substrate.

根據本申請案之實施例,所述匹配網路位於所述基板內。According to an embodiment of the present application, the matching network is located in the substrate.

在另一態樣中,本申請案亦提供一種調整卡盤形變之裝置,其包括:基板;及多個可形變單元,其位於所述基板上,每一所述可形變單元基於受控電壓而在所述基板之平面方向上產生對應於所述受控電壓大小之形變,而使卡盤產生相對應之形變。In another embodiment, the present application also provides a device for adjusting the deformation of a chuck, comprising: a substrate; and a plurality of deformable units located on the substrate, each of the deformable units generating a deformation corresponding to the magnitude of the controlled voltage in the planar direction of the substrate based on the controlled voltage, thereby causing the chuck to generate a corresponding deformation.

在以下附圖及描述中闡述本申請案之一或多個實例之細節。其他特徵、目標及優勢將根據所述描述及附圖及申請專利範圍而顯而易見。The details of one or more embodiments of the present application are set forth in the following drawings and description. Other features, objects and advantages will be apparent from the description and drawings and the scope of the application.

為更好地理解本發明之精神,以下結合本發明之部分實施例對其作進一步說明。In order to better understand the spirit of the present invention, some embodiments of the present invention are further described below.

本說明書內使用之詞彙「在一實施例」或「根據一實施例」並不必要參照相同具體實施例,且本說明書內使用之「在其他(一些/某些)實施例」或「根據其他(一些/某些)實施例」並不必要參照不同之具體實施例。其目的在於例如所主張之主題包括全部或部分範例具體實施例之組合。本文所指「上」及「下」之意義並不限於圖式所直接呈現之關係,其應包含具有明確對應關係之描述,例如「左」及「右」,或者為「上」及「下」之相反。本文所稱之「連接」應理解為涵蓋「直接連接」及「經由一或多個中間部件連接」。本說明書中所使用之各種部件之名稱僅出於說明之目的,並不具備限定作用,不同廠商可使用不同之名稱來指代具備相同功能之部件。The terms "in one embodiment" or "according to an embodiment" used in this specification do not necessarily refer to the same specific embodiment, and the terms "in other (some/certain) embodiments" or "according to other (some/certain) embodiments" used in this specification do not necessarily refer to different specific embodiments. The purpose is, for example, that the claimed subject matter includes a combination of all or part of the exemplary specific embodiments. The meaning of "upper" and "lower" referred to herein is not limited to the relationship directly presented in the drawings, and should include descriptions with a clear corresponding relationship, such as "left" and "right", or the opposite of "upper" and "lower". The term "connected" as used herein should be understood to cover "directly connected" and "connected via one or more intermediate components". The names of various components used in this manual are for illustrative purposes only and are not limiting. Different manufacturers may use different names to refer to components with the same function.

以下詳細地論述本發明之各種實施方式。儘管論述具體實施,但應理解,此等實施方式僅用於說明之目的。熟習此項技術者將認識到,在不偏離本發明之精神及保護範圍之情況下,可以使用其他部件及組態。Various implementations of the present invention are discussed in detail below. Although specific implementations are discussed, it should be understood that these implementations are for illustrative purposes only. Those skilled in the art will recognize that other components and configurations may be used without departing from the spirit and scope of the present invention.

圖1為根據本申請案之一些實施例之調整卡盤形變之系統100得示意圖。FIG. 1 is a schematic diagram of a system 100 for adjusting chuck deformation according to some embodiments of the present application.

調整卡盤形變之系統100之功能在於模擬晶圓之翹曲形狀,使吸附晶圓之卡盤在其吸附面產生相對應之形變,以使晶圓之翹曲程度得到補償,從而提高晶圓接合時之精準度,避免晶圓直接接合所可能導致之偏差。The function of the chuck deformation adjustment system 100 is to simulate the warp shape of the wafer so that the chuck that adsorbs the wafer generates a corresponding deformation on its adsorption surface, so that the warp of the wafer is compensated, thereby improving the accuracy of wafer bonding and avoiding deviations that may be caused by direct wafer bonding.

請參考圖1,調整卡盤形變之系統100包括處理器12、卡盤形變調整裝置14與匹配網路16。處理器12基於晶圓翹曲資料105來判定卡盤形變之程度。根據本申請案之一些實施例,晶圓翹曲資料105係由供貨商所提供,可呈現晶圓在某座標點(x, y)之翹曲量w(x, y)。處理器12基於晶圓翹曲資料105中之翹曲量w(x, y),判定對應於此翹曲量w(x, y)之卡盤形變量d(x, y)。Referring to FIG. 1 , the system 100 for adjusting chuck deformation includes a processor 12, a chuck deformation adjustment device 14, and a matching network 16. The processor 12 determines the degree of chuck deformation based on wafer warp data 105. According to some embodiments of the present application, the wafer warp data 105 is provided by a supplier and can present a warp amount w(x, y) of the wafer at a certain coordinate point (x, y). The processor 12 determines the chuck deformation amount d(x, y) corresponding to the warp amount w(x, y) based on the warp amount w(x, y) in the wafer warp data 105.

處理器12向匹配網路16提供卡盤形變量d(x, y)之資訊。匹配網路16連接至電源18,且基於此卡盤形變量d(x, y)之資訊,在電源18之供電電壓Vs下,提供對應於卡盤形變量d(x, y)之受控電壓V(x, y)至卡盤形變調整裝置14,以使卡盤產生對應於受控電壓V(x, y)大小之形變量。根據本申請案之一些實施例,匹配網路16包含電阻、電感或電容(RLC)網路。處理器12具有相關之硬體與電腦程式,用以支援上述晶圓翹曲資料105之判讀與卡盤形變量d(x, y)之運算。The processor 12 provides the information of the chuck deformation d(x, y) to the matching network 16. The matching network 16 is connected to the power supply 18, and based on the information of the chuck deformation d(x, y), the matching network 16 provides a controlled voltage V(x, y) corresponding to the chuck deformation d(x, y) to the chuck deformation adjustment device 14 under the supply voltage Vs of the power supply 18, so that the chuck generates a deformation corresponding to the magnitude of the controlled voltage V(x, y). According to some embodiments of the present application, the matching network 16 includes a resistor, inductor or capacitor (RLC) network. The processor 12 has related hardware and computer programs to support the reading of the wafer warp data 105 and the calculation of the chuck deformation d(x, y).

圖2為圖1中之卡盤形變調整裝置14之示意圖。FIG. 2 is a schematic diagram of the chuck deformation adjustment device 14 in FIG. 1 .

請參考圖2,卡盤形變調整裝置14包括基板147及位於基板147上之多個可形變單元140。卡盤形變調整裝置14設置於卡盤25中。卡盤25具有吸附面258,用以吸附晶圓28於卡盤25之上表面25a。卡盤形變調整裝置14之多個可形變單元140位於卡盤25之吸附面258下方,而使基板147之平面方向n與吸附面258之平面方向n相平行。根據本申請案之一些實施例,卡盤25選自具有低密度、高彈性、低膨脹係數、導熱快、耐磨、高硬度與易處理等特點之材質。因此,卡盤25之吸附面258亦具有上述特點。根據本申請案之一實施例,卡盤25之材質為碳化矽。此外,卡盤25之直徑約為360毫米,厚度約為23毫米。Please refer to Figure 2, the chuck deformation adjustment device 14 includes a substrate 147 and a plurality of deformable units 140 located on the substrate 147. The chuck deformation adjustment device 14 is disposed in the chuck 25. The chuck 25 has an adsorption surface 258 for adsorbing the wafer 28 on the upper surface 25a of the chuck 25. The plurality of deformable units 140 of the chuck deformation adjustment device 14 are located below the adsorption surface 258 of the chuck 25, so that the plane direction n of the substrate 147 is parallel to the plane direction n of the adsorption surface 258. According to some embodiments of the present application, the chuck 25 is selected from a material having the characteristics of low density, high elasticity, low expansion coefficient, fast thermal conductivity, wear resistance, high hardness and easy handling. Therefore, the adsorption surface 258 of the chuck 25 also has the above-mentioned characteristics. According to one embodiment of the present application, the material of the chuck 25 is silicon carbide. In addition, the diameter of the chuck 25 is about 360 mm and the thickness is about 23 mm.

卡盤形變調整裝置14之多個可形變單元140可呈圓形分佈或螺旋狀分佈。根據本申請案之一實施例,卡盤形變調整裝置14之多個可形變單元140呈陣列排列,如圖3A所示。陣列排列之方式有利於對可形變單元140座標化,以基於晶圓之座標點(x, y)之翹曲量w(x, y),對相應座標點之可形變單元140進行受控電壓V(x, y)之定址。根據本申請案之另一實施例,卡盤形變調整裝置14之多個可形變單元140呈不規則排列,如圖3B所示。根據本申請案之一實施例,卡盤形變調整裝置14之每一可形變單元140呈凸點狀。根據本申請案之實施例,每一可形變單元140之剖面可為矩形、圓形或三角形。根據本申請案之一實施例,每一可形變單元140之材質為壓電陶瓷,例如為無鉛之碳酸鋇基材料。The multiple deformable units 140 of the chuck deformation adjustment device 14 can be distributed in a circular shape or a spiral shape. According to one embodiment of the present application, the multiple deformable units 140 of the chuck deformation adjustment device 14 are arranged in an array, as shown in FIG3A. The array arrangement is conducive to the coordinateization of the deformable units 140, so that the deformable units 140 of the corresponding coordinate points are addressed by the controlled voltage V(x, y) based on the warp amount w(x, y) of the coordinate point (x, y) of the wafer. According to another embodiment of the present application, the multiple deformable units 140 of the chuck deformation adjustment device 14 are arranged irregularly, as shown in FIG3B. According to one embodiment of the present application, each deformable unit 140 of the chuck deformation adjustment device 14 is in the shape of a convex point. According to one embodiment of the present application, the cross section of each deformable unit 140 can be rectangular, circular or triangular. According to one embodiment of the present application, the material of each deformable unit 140 is piezoelectric ceramic, such as a lead-free barium carbonate-based material.

亦請參考圖1,卡盤形變調整裝置14之多個可形變單元140連接至匹配網路16。匹配網路16基於處理器12判定之形變量,輸出受控電壓V(x, y)至多個可形變單元140。如圖4所示,每一可形變單元140基於來自匹配網路16之受控電壓V(x, y)而在基板147之平面方向n上產生對應於該受控電壓V(x, y)大小之形變,而使卡盤25之吸附面258在吸附面258之平面方向n上產生相對應之形變。Please also refer to FIG. 1 , the multiple deformable units 140 of the chuck deformation adjustment device 14 are connected to the matching network 16. The matching network 16 outputs the controlled voltage V(x, y) to the multiple deformable units 140 based on the deformation amount determined by the processor 12. As shown in FIG. 4 , each deformable unit 140 generates a deformation corresponding to the magnitude of the controlled voltage V(x, y) in the plane direction n of the substrate 147 based on the controlled voltage V(x, y) from the matching network 16, so that the adsorption surface 258 of the chuck 25 generates a corresponding deformation in the plane direction n of the adsorption surface 258.

根據本申請案之實施例,卡盤形變調整裝置14之基板147為半導體基板,匹配網路16之組件以半導體製程製備而使匹配網路16位於該基板147內。According to an embodiment of the present application, the substrate 147 of the chuck deformation adjustment device 14 is a semiconductor substrate, and the components of the matching network 16 are prepared by a semiconductor process so that the matching network 16 is located in the substrate 147.

相較於現有之系統或裝置,本申請案之調整卡盤變形之系統及裝置之每個可形變單元皆可獨立控制。當可形變單元之數量足夠多時,便可以精確控制任意可形變單元之形變量及形變時間,從而實現卡盤之精確變形及其後晶圓之精準接合。本申請案之調整卡盤變形之系統及裝置適應於晶圓之各種翹曲變形,且控制精度高。Compared to existing systems or devices, each deformable unit of the system and device for adjusting the deformation of the chuck in this application can be independently controlled. When the number of deformable units is sufficient, the deformation amount and deformation time of any deformable unit can be accurately controlled, thereby realizing the precise deformation of the chuck and the subsequent precise bonding of the wafer. The system and device for adjusting the deformation of the chuck in this application are suitable for various warp deformations of the wafer and have high control accuracy.

本文中之描述經提供以使熟習此項技術者能夠進行或使用本發明。熟習此項技術者將易於顯而易見對本發明之各種修改,且本文中所定義之一般原理可應用於其他變化形式而不會脫離本發明之精神或範圍。因此,本發明不限於本文所述的實例及設計,而是被賦予與本文所揭示之原理及新穎特徵一致之最寬範圍。The description herein is provided to enable one skilled in the art to make or use the invention. Various modifications to the invention will be readily apparent to one skilled in the art, and the general principles defined herein may be applied to other variations without departing from the spirit or scope of the invention. Therefore, the invention is not limited to the examples and designs described herein, but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

12:處理器 14:卡盤形變調整裝置 16:匹配網路 18:電源 25:卡盤 25a:上表面 28:晶圓 100:調整卡盤形變之系統 105:晶圓翹曲資料 140:可形變單元 147:基板 258:吸附面 12: Processor 14: Chuck deformation adjustment device 16: Matching network 18: Power supply 25: Chuck 25a: Upper surface 28: Wafer 100: Chuck deformation adjustment system 105: Wafer warp data 140: Deformable unit 147: Substrate 258: Adsorption surface

本說明書中之公開內容提及且包含以下各圖:The public contents in this manual refer to and include the following figures:

圖1為根據本申請案之一些實施例之調整卡盤形變之系統的示意圖;FIG. 1 is a schematic diagram of a system for adjusting chuck deformation according to some embodiments of the present application;

圖2為圖1中之卡盤形變調整裝置之示意圖;FIG2 is a schematic diagram of the chuck deformation adjustment device in FIG1;

圖3A與圖3B為根據本申請案之一些實施例之可形變單元之排列的示意圖;3A and 3B are schematic diagrams showing the arrangement of deformable units according to some embodiments of the present application;

圖4為圖1中之卡盤形變調整裝置之操作示意圖。FIG. 4 is a schematic diagram showing the operation of the chuck deformation adjustment device in FIG. 1 .

根據慣例,圖式中所說明之各種特徵可能並非按比例繪製。因此,為清晰起見,可任意擴大或減小各種特徵之尺寸。圖式中所說明之各部件之形狀僅為示例性形狀,並非限定部件之實際形狀。另外,為清楚起見,可簡化圖式中所說明之實施。因此,圖式可能並未說明給定設備或裝置之全部組件。最後,可貫穿說明書及圖式使用相同參考標號來表示相同特徵。As is customary, the various features illustrated in the drawings may not be drawn to scale. Therefore, the sizes of the various features may be arbitrarily enlarged or reduced for clarity. The shapes of the components illustrated in the drawings are exemplary shapes only and do not limit the actual shapes of the components. In addition, the implementations illustrated in the drawings may be simplified for clarity. Therefore, the drawings may not illustrate all components of a given device or apparatus. Finally, the same reference numerals may be used throughout the specification and drawings to represent the same features.

12:處理器 12: Processor

14:卡盤形變調整裝置 14: Chuck deformation adjustment device

16:匹配網路 16: Matching network

18:電源 18: Power supply

100:調整卡盤形變之系統 100: System for adjusting chuck deformation

105:晶圓翹曲資料 105: Wafer warp data

Claims (13)

一種調整卡盤形變之系統,其包括:卡盤,其具有吸附面,用以吸附晶圓;卡盤形變調整裝置,其位於所述吸附面下方,且具有多個可形變單元,每一所述可形變單元基於受控電壓而在所述吸附面之平面方向上產生對應於所述受控電壓大小之形變;處理器,其基於晶圓翹曲之資料,判定所述多個可形變單元之形變量,使對應於晶圓翹曲程度之受控電壓輸入至所述多個可形變單元,以使所述吸附面產生形變;及匹配網路,其連接至所述多個可形變單元,並基於所述處理器判定之形變量,輸出所述受控電壓至所述多個可形變單元。 A system for adjusting chuck deformation includes: a chuck having an adsorption surface for adsorbing a wafer; a chuck deformation adjustment device located below the adsorption surface and having a plurality of deformable units, each of which generates a deformation corresponding to the magnitude of the controlled voltage in the plane direction of the adsorption surface based on a controlled voltage; a processor, which determines the deformation amount of the plurality of deformable units based on wafer warp data, and inputs a controlled voltage corresponding to the degree of wafer warp to the plurality of deformable units to cause the adsorption surface to deform; and a matching network, which is connected to the plurality of deformable units and outputs the controlled voltage to the plurality of deformable units based on the deformation amount determined by the processor. 如請求項1之系統,其中所述多個可形變單元包含壓電陶瓷。 A system as claimed in claim 1, wherein the plurality of deformable units comprise piezoelectric ceramics. 如請求項2之系統,其中所述壓電陶瓷包含無鉛之碳酸鋇基材料。 A system as claimed in claim 2, wherein the piezoelectric ceramic comprises a lead-free barium carbonate-based material. 如請求項1之系統,其中每一所述可形變單元呈凸點狀。 A system as claimed in claim 1, wherein each of the deformable units is in the shape of a convex point. 如請求項1之系統,其中所述多個可形變單元呈陣列排列。 A system as claimed in claim 1, wherein the plurality of deformable units are arranged in an array. 如請求項1之系統,其中所述卡盤包含碳化矽。 A system as claimed in claim 1, wherein the chuck comprises silicon carbide. 如請求項1之系統,其中所述卡盤形變調整裝置進一步包括基板,其 中所述多個可形變單元位於所述基板上。 A system as claimed in claim 1, wherein the chuck deformation adjustment device further comprises a substrate, wherein the plurality of deformable units are located on the substrate. 如請求項7之系統,其中所述匹配網路位於所述基板內。 A system as claimed in claim 7, wherein the matching network is located within the substrate. 一種調整卡盤形變之裝置,其包括:基板;多個可形變單元,其位於所述基板上,每一所述可形變單元基於受控電壓而在所述基板之平面方向上產生對應於所述受控電壓大小之形變,而使卡盤產生相對應之形變;及匹配網路,所述匹配網路位於所述基板內,且用以基於晶圓翹曲之程度,使所述受控電壓輸入至所述多個可形變單元。 A device for adjusting the deformation of a chuck comprises: a substrate; a plurality of deformable units located on the substrate, each of which generates a deformation corresponding to the magnitude of the controlled voltage in the plane direction of the substrate based on a controlled voltage, thereby causing the chuck to generate a corresponding deformation; and a matching network, which is located in the substrate and is used to input the controlled voltage to the plurality of deformable units based on the degree of wafer warping. 如請求項9之裝置,其中所述多個可形變單元包含壓電陶瓷。 A device as claimed in claim 9, wherein the plurality of deformable units comprise piezoelectric ceramics. 如請求項10之裝置,其中所述壓電陶瓷包含無鉛之碳酸鋇基材料。 A device as claimed in claim 10, wherein the piezoelectric ceramic comprises a lead-free barium carbonate-based material. 如請求項9之裝置,其中每一所述可形變單元呈凸點狀。 A device as claimed in claim 9, wherein each of the deformable units is in the shape of a convex point. 如請求項9之裝置,其中所述多個可形變單元呈陣列排列。 A device as claimed in claim 9, wherein the plurality of deformable units are arranged in an array.
TW111144617A 2021-12-28 2022-11-22 System and device for adjusting chuck deformation TWI846161B (en)

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CN202111623496.4 2021-12-28
CN202111623496.4A CN116403929A (en) 2021-12-28 2021-12-28 System and device for adjusting deformation of chuck

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TW202331924A TW202331924A (en) 2023-08-01
TWI846161B true TWI846161B (en) 2024-06-21

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Publication number Priority date Publication date Assignee Title
TW202129810A (en) 2017-09-21 2021-08-01 奧地利商Ev集團E塔那有限公司 Device and method for bonding substrates

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW202129810A (en) 2017-09-21 2021-08-01 奧地利商Ev集團E塔那有限公司 Device and method for bonding substrates

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