TWI845965B - Fluorescent ceramic components - Google Patents

Fluorescent ceramic components Download PDF

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TWI845965B
TWI845965B TW111122943A TW111122943A TWI845965B TW I845965 B TWI845965 B TW I845965B TW 111122943 A TW111122943 A TW 111122943A TW 111122943 A TW111122943 A TW 111122943A TW I845965 B TWI845965 B TW I845965B
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light
fluorescent ceramic
ceramic layer
wavelength conversion
conversion element
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TW202238245A (en
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阿部岳志
本多洋介
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日商松下知識產權經營股份有限公司
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03BAPPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B21/00Projectors or projection-type viewers; Accessories therefor
    • G03B21/14Details
    • G03B21/20Lamp housings
    • G03B21/2006Lamp housings characterised by the light source
    • G03B21/2033LED or laser light sources
    • G03B21/204LED or laser light sources using secondary light emission, e.g. luminescence or fluorescence
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7766Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals
    • C09K11/7774Aluminates
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03BAPPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B21/00Projectors or projection-type viewers; Accessories therefor
    • G03B21/14Details
    • G03B21/20Lamp housings
    • G03B21/2066Reflectors in illumination beam

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  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
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  • Optical Filters (AREA)
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Abstract

本發明提供光利用效率高之波長轉換元件、投影機及螢光體陶瓷構件。波長轉換元件1,使用在投影機100,接收激發光L1,放出包含螢光的反射光L2,其具備:基板10,具有光反射面13;以及螢光體陶瓷層20,位於光反射面13的上方,包含具有石榴石構造之第1結晶相;光反射面13的可見光反射率為95%以上100%以下;螢光體陶瓷層20的密度為理論密度之97%以上100%以下;螢光體陶瓷層20的膜厚為50μm以上而未滿120μm。The present invention provides a wavelength conversion element, a projector and a fluorescent ceramic component with high light utilization efficiency. The wavelength conversion element 1 is used in the projector 100, receives excitation light L1, and emits reflected light L2 containing fluorescent light, and comprises: a substrate 10 having a light reflecting surface 13; and a fluorescent ceramic layer 20, which is located above the light reflecting surface 13 and contains a first crystalline phase having a garnet structure; the visible light reflectivity of the light reflecting surface 13 is greater than 95% and less than 100%; the density of the fluorescent ceramic layer 20 is greater than 97% and less than 100% of the theoretical density; and the film thickness of the fluorescent ceramic layer 20 is greater than 50 μm and less than 120 μm.

Description

螢光體陶瓷構件Fluorescent ceramic components

本發明係關於一種波長轉換元件、使用該波長轉換元件之投影機、及螢光體陶瓷構件。 The present invention relates to a wavelength conversion element, a projector using the wavelength conversion element, and a fluorescent ceramic component.

過去,已知一種使用於投影機之波長轉換元件。 In the past, a wavelength conversion element used in a projector was known.

例如,於專利文獻1揭露之波長轉換元件,具備俯視呈圓形之基板、及沿著基板的圓周方向設置之螢光體層(螢光體陶瓷構件),可藉由與基板的中心連接之馬達而旋轉。在專利文獻1,此波長轉換元件,作為投影機的反射型之螢光輪而作用,該波長轉換元件之螢光體層所放出的螢光,作為投影機放出的光線(投射光)而利用。 For example, the wavelength conversion element disclosed in Patent Document 1 has a circular substrate in a top view and a fluorescent layer (fluorescent ceramic component) arranged along the circumferential direction of the substrate, which can be rotated by a motor connected to the center of the substrate. In Patent Document 1, this wavelength conversion element acts as a reflective fluorescent wheel of a projector, and the fluorescent light emitted by the fluorescent layer of the wavelength conversion element is used as the light (projection light) emitted by the projector.

[習知技術文獻] [Learning Technology Literature]

[專利文獻] [Patent Literature]

專利文獻1:日本特開第2019-66880號公報 Patent document 1: Japanese Patent Publication No. 2019-66880

而上述習知之波長轉換元件、投影機及螢光體陶瓷構件,有光線之利用效率低等問題。因而,本發明提供光利用效率高之波長轉換元件、投影機及螢光體陶瓷構件。 However, the above-mentioned known wavelength conversion elements, projectors and fluorescent ceramic components have problems such as low light utilization efficiency. Therefore, the present invention provides a wavelength conversion element, projector and fluorescent ceramic component with high light utilization efficiency.

本發明的一態樣之波長轉換元件,使用在投影機,接收激發光,放出包含螢光的反射光,其具備:基板,具有光反射面;以及螢光體陶瓷層,位於該光反射面的上方,包含具有石榴石構造之第1結晶相;該光反射面的可見光反射率為95%以上100%以下;該螢光體陶瓷層的密度為理論密度之97%以上100%以下;該螢光體陶瓷層的膜厚為50μm以上而未滿120μm。 A wavelength conversion element of one aspect of the present invention is used in a projector, receives excitation light, and emits reflected light including fluorescence, and comprises: a substrate having a light reflecting surface; and a fluorescent ceramic layer, located above the light reflecting surface, including a first crystal phase having a garnet structure; the visible light reflectivity of the light reflecting surface is greater than 95% and less than 100%; the density of the fluorescent ceramic layer is greater than 97% and less than 100% of the theoretical density; the film thickness of the fluorescent ceramic layer is greater than 50μm and less than 120μm.

此外,本發明的一態樣之投影機,具備:激發光源,放出激發光;以及該波長轉換元件,接收該激發光,放出包含螢光的反射光。 In addition, a projector of one embodiment of the present invention comprises: an excitation light source that emits excitation light; and a wavelength conversion element that receives the excitation light and emits reflected light containing fluorescence.

此外,本發明的一態樣之螢光體陶瓷構件,使用在投影機,其包含具有石榴石構造之第1結晶相、及具有石榴石構造以外的構造之第2結晶相;該螢光體陶瓷構件的密度為理論密度之97%以上100%以下;該螢光體陶瓷構件的膜厚為50μm以上而未滿300μm。 In addition, a fluorescent ceramic component of one embodiment of the present invention is used in a projector, and includes a first crystal phase having a garnet structure and a second crystal phase having a structure other than a garnet structure; the density of the fluorescent ceramic component is greater than 97% and less than 100% of the theoretical density; the film thickness of the fluorescent ceramic component is greater than 50 μm and less than 300 μm.

依本發明,則可提供光利用效率高之波長轉換元件、投影機及螢光體陶瓷構件。 According to the present invention, a wavelength conversion element, a projector and a fluorescent ceramic component with high light utilization efficiency can be provided.

1,1a,1x:波長轉換元件 1,1a,1x: Wavelength conversion element

10:基板 10: Substrate

100:投影機 100: Projector

11:基板本體 11: Substrate body

12:光反射層 12: Light reflection layer

121:光散射性粒子 121: Light scattering particles

122:黏結劑 122: Adhesive

13:光反射面 13: Light reflecting surface

2:孔隙構件 2: Porous components

2a:開口部 2a: Opening

20,20a,20b,20x:螢光體陶瓷層 20,20a,20b,20x: Fluorescent ceramic layer

3:光源 3: Light source

30:防止反射層 30: Anti-reflection layer

4:馬達 4: Motor

5:分光鏡 5: Spectroscope

6:顯示元件 6: Display components

7:投射光學構件 7: Projection optical components

8:反射鏡 8: Reflector

D,Dx:距離 D,Dx: distance

L1:激發光 L1: Excitation light

L12:透射光 L12: Transmitted light

L2,L2x:反射光 L2, L2x: reflected light

圖1係實施形態之波長轉換元件的立體圖。 Figure 1 is a three-dimensional diagram of the wavelength conversion element in an implementation form.

圖2係顯示圖1的II-II線之波長轉換元件的截斷面之剖面圖。 FIG2 is a cross-sectional view showing the cross section of the wavelength conversion element along line II-II in FIG1.

圖3係顯示實施形態之投影機的外觀之立體圖。 FIG3 is a three-dimensional diagram showing the appearance of the projector in an implementation form.

圖4係實施形態之投影機的光學系統之示意圖。 FIG4 is a schematic diagram of the optical system of the projector in an implementation form.

圖5A係實施形態之波長轉換元件與孔隙構件之示意圖。 FIG5A is a schematic diagram of a wavelength conversion element and a pore component of an implementation form.

圖5B係實施形態的比較例之波長轉換元件與孔隙構件之示意圖。 FIG5B is a schematic diagram of a wavelength conversion element and a pore component of a comparative example of an implementation form.

圖6係顯示實施形態的實施例及比較例之波長轉換元件的評價結果之圖。 FIG6 is a diagram showing the evaluation results of the wavelength conversion element of the embodiment and the comparative example of the implementation form.

圖7係顯示實施形態的實施例之波長轉換元件的評價結果之圖。 FIG. 7 is a diagram showing the evaluation results of the wavelength conversion element of the embodiment of the implementation form.

圖8係變形例1之波長轉換元件的立體圖。 Figure 8 is a three-dimensional diagram of the wavelength conversion element of variant example 1.

圖9係顯示圖8的IX-IX線之波長轉換元件的截斷面之剖面圖。 FIG9 is a cross-sectional view showing the cross-section of the wavelength conversion element along line IX-IX of FIG8.

圖10(a)~(c)係顯示變形例1的實施例之螢光體陶瓷層的剖面之SEM影像。 Figure 10 (a) to (c) show the cross-sectional SEM images of the fluorescent ceramic layer of the embodiment of variant example 1.

圖11係顯示變形例1的實施例之波長轉換元件的評價結果之圖。 FIG11 is a diagram showing the evaluation results of the wavelength conversion element of the embodiment of variant 1.

圖12係顯示變形例2之螢光體陶瓷構件的立體圖。 FIG. 12 is a three-dimensional diagram showing the fluorescent ceramic component of variation 2.

以下,利用圖式,針對本發明的實施形態之波長轉換元件等詳細地予以說明。 The following uses diagrams to explain in detail the wavelength conversion element and other aspects of the implementation form of the present invention.

另,以下說明之實施形態,皆顯綜合性或具體性案例。下述實施形態所示的數值、形狀、材料、構成要素、構成要素之配置位置與連接形態、製程、製 程之順序等皆為一例,主旨不在於限定本發明。此外,將關於下述實施形態的構成要素中之未記載於獨立請求項的構成要素,作為任意構成要素而說明。 In addition, the embodiments described below are all comprehensive or specific examples. The values, shapes, materials, components, configuration positions and connection forms of components, processes, and process sequences shown in the embodiments described below are all examples, and the main purpose is not to limit the present invention. In addition, the components of the embodiments described below that are not described in the independent claim items are described as arbitrary components.

此外,各圖為示意圖,並非為嚴格圖示。因此,例如,在各圖中比例尺等不必非得一致。此外,各圖中,對實質上相同的構成給予相同的符號,將重複的說明省略或簡化。 In addition, each figure is a schematic diagram and is not a strict illustration. Therefore, for example, the scales in each figure do not necessarily have to be consistent. In addition, in each figure, the same symbols are given to substantially the same components, and repeated explanations are omitted or simplified.

本說明書中,平行或正交等表示要素間的關係性之用語、及圓形或橢圓形等表示要素的形狀之用語、與數值範圍,並非僅為表示嚴格意義的展現,而係意指亦包含實質上同等範圍,例如數%程度之差異的展現。 In this specification, terms such as parallel or orthogonal that indicate the relationship between elements, terms such as circular or elliptical that indicate the shape of elements, and numerical ranges are not intended to be strictly defined, but are intended to include substantially equivalent ranges, such as those with differences of a few percent.

此外,本說明書中,「俯視」,係指沿著基板所具有之光反射面的垂直方向觀察波長轉換元件之情況。 In addition, in this specification, "top view" refers to observing the wavelength conversion element in the direction perpendicular to the light reflecting surface of the substrate.

此外,本說明書中,波長轉換元件的構成之「上」及「下」等用語,並非指絕對的空間認知的上方(鉛直上方)及下方(鉛直下方),而係以疊層構造之疊層順序為基礎而藉由相對的位置關係規定之用語。此外,「上方」及「下方」等用語,不僅適用於2個構成要素彼此隔著間隔配置而在2個構成要素之間存在其他構成要素的情況,亦適用於2個構成要素彼此密接配置而使2個構成要素接觸的情況。 In addition, in this specification, the terms "above" and "below" of the wavelength conversion element do not refer to the absolute top (directly above the lead) and bottom (directly below the lead) in spatial cognition, but are terms defined by relative positional relationships based on the stacking order of the stacking structure. In addition, the terms "above" and "below" are applicable not only to the case where two components are arranged with a gap between them and there are other components between them, but also to the case where two components are arranged in close proximity to each other and the two components are in contact.

此外,本說明書及圖式中,x軸、y軸及z軸,表示三維正交座標系之三軸。各實施形態,使和基板所具有之光反射面平行的二軸為x軸及y軸,使和光反射 面呈正交之方向為z軸方向。此外,下述說明之各實施形態中,有將z軸正方向記載為上方,將z軸負方向記載為下方的情況。 In addition, in this specification and drawings, the x-axis, y-axis, and z-axis represent the three axes of the three-dimensional orthogonal coordinate system. In each implementation form, the two axes parallel to the light reflection surface of the substrate are the x-axis and the y-axis, and the direction orthogonal to the light reflection surface is the z-axis direction. In addition, in each implementation form described below, there is a case where the positive direction of the z-axis is recorded as the top and the negative direction of the z-axis is recorded as the bottom.

(實施形態) (Implementation form)

[波長轉換元件的構成] [Structure of wavelength conversion element]

首先,利用圖式,針對本實施形態之波長轉換元件1的構成予以說明。圖1係本實施形態之波長轉換元件1的立體圖。圖2係顯示圖1的II-II線之波長轉換元件1的截斷面之剖面圖。 First, the structure of the wavelength conversion element 1 of this embodiment is explained using diagrams. FIG. 1 is a three-dimensional diagram of the wavelength conversion element 1 of this embodiment. FIG. 2 is a cross-sectional diagram showing the cross-section of the wavelength conversion element 1 along the II-II line of FIG. 1 .

如圖1及圖2所示,波長轉換元件1,係具備具有光反射面13的基板10、螢光體陶瓷層20、及防止反射層30之元件。 As shown in FIG. 1 and FIG. 2 , the wavelength conversion element 1 is an element having a substrate 10 having a light reflecting surface 13, a fluorescent ceramic layer 20, and an anti-reflection layer 30.

本實施形態中,波長轉換元件1,係使用在投影機,接收激發光L1,放出包含螢光的反射光之螢光輪。波長轉換元件1,具有圓盤形狀,於俯視時波長轉換元件1的中央設置有旋轉驅動的馬達4。因此,波長轉換元件1,藉由馬達4,以馬達4為軸而往圖1所示之箭頭的方向旋轉驅動。 In this embodiment, the wavelength conversion element 1 is a fluorescent wheel used in a projector to receive excitation light L1 and emit reflected light including fluorescence. The wavelength conversion element 1 has a disc shape, and a rotationally driven motor 4 is provided in the center of the wavelength conversion element 1 when viewed from above. Therefore, the wavelength conversion element 1 is rotationally driven in the direction of the arrow shown in Figure 1 with the motor 4 as the axis by the motor 4.

另,圖1中,顯示設置馬達4之螢光輪的構成,但波長轉換元件1,亦可不具備馬達4。亦即,波長轉換元件1,亦可為固定元件而不旋轉驅動。若為此等構成,則波長轉換元件1成為小型,故可提供密實的投影機。 In addition, FIG. 1 shows a structure of a fluorescent wheel provided with a motor 4, but the wavelength conversion element 1 may not have a motor 4. In other words, the wavelength conversion element 1 may be a fixed element without being driven in rotation. With such a structure, the wavelength conversion element 1 becomes small, so a compact projector can be provided.

螢光體陶瓷層20,係位於基板10所具有的光反射面13的上方的層。本實施形態中,波長轉換元件1為螢光輪,故螢光體陶瓷層20,為螢光環。螢光體陶瓷層20,在從波長轉換元件1之旋轉中心部(即設置馬達4處)算起的距離相等之 圓周上呈環狀地設置。亦即,螢光體陶瓷層20,設置為俯視時沿著圓周方向的帶狀。 The fluorescent ceramic layer 20 is a layer located above the light reflecting surface 13 of the substrate 10. In this embodiment, the wavelength conversion element 1 is a fluorescent wheel, so the fluorescent ceramic layer 20 is a fluorescent ring. The fluorescent ceramic layer 20 is arranged in a ring shape on a circle with equal distances from the rotation center of the wavelength conversion element 1 (i.e., where the motor 4 is arranged). That is, the fluorescent ceramic layer 20 is arranged in a belt shape along the circumferential direction when viewed from above.

螢光體陶瓷層20,包含具有石榴石構造之第1結晶相。更具體而言,本實施形態中,螢光體陶瓷層20,僅由具有石榴石構造之第1結晶相構成。亦即,本實施形態之螢光體陶瓷層20,不含具有與石榴石構造不同的構造之結晶相。石榴石構造,係以A3B2C3O12之一般式表示的結晶構造。於元素A,應用Ca、Y、La、Ce、Pr、Nd、Sm、Eu、Gd、Tb及Lu等稀土族元素;於元素B,應用Mg、Al、Si、Ga及Sc等元素;於元素C,應用Al、Si及Ga等元素。作為此等石榴石構造,可列舉YAG(釔鋁石榴石(Yttrium Aluminum Garnet))、LuAG(鎦鋁石榴石(Lutetium Aluminum Garnet))、Lu2CaMg2Si3O12(鎦鈣鎂矽石榴石(Lutetium Calcium Magnesium Silicon Garnet))及TAG(鋱鋁石榴石(Terbium Aluminum Garnet))等。本實施形態中,螢光體陶瓷層20,係由以(Y1-xCex)3Al2Al3O12(即(Y1-xCex)3Al5O12)(0.001≦x<0.1)表示之第1結晶相,亦即由YAG構成。 The fluorescent ceramic layer 20 includes a first crystalline phase having a garnet structure. More specifically, in the present embodiment, the fluorescent ceramic layer 20 is composed only of the first crystalline phase having a garnet structure. That is, the fluorescent ceramic layer 20 of the present embodiment does not contain a crystalline phase having a structure different from the garnet structure. The garnet structure is a crystalline structure represented by the general formula of A 3 B 2 C 3 O 12. As element A, rare earth elements such as Ca, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb and Lu are used; as element B, elements such as Mg, Al, Si, Ga and Sc are used; as element C, elements such as Al, Si and Ga are used. Examples of such garnet structures include YAG (Yttrium Aluminum Garnet), LuAG (Lutetium Aluminum Garnet), Lu 2 CaMg 2 Si 3 O 12 (Lutetium Calcium Magnesium Silicon Garnet), and TAG (Terbium Aluminum Garnet). In the present embodiment, the fluorescent ceramic layer 20 is composed of a first crystalline phase represented by (Y 1-x Ce x ) 3 Al 2 Al 3 O 12 (i.e., (Y 1-x Ce x ) 3 Al 5 O 12 )(0.001≦x<0.1), namely, YAG.

另,構成螢光體陶瓷層20之第1結晶相,亦可為化學組成不同之複數種石榴石結晶相的固溶體。作為此等固溶體,可列舉以(Y1-xCex)3Al2Al3O12(0.001≦x<0.1)表示之石榴石結晶相與以(Lu1-dCed)3Al2Al3O12(0.001≦d<0.1)表示之石榴石結晶相的固溶體((1-a)(Y1-xCex)3Al5O12‧a(Lu1-dCed)3Al2Al3O12(0<a<1))。此外,作為此等固溶體,可列舉以(Y1-xCex)3Al2Al3O12(0.001≦x<0.1)表示之石榴石結晶相與以(Lu1-zCez)2CaMg2Si3O12(0.0015≦z<0.15)表示之石榴石結晶相的固溶體((1-b)(Y1-xCex)3Al2Al3O12‧b(Lu1-zCez)2CaMg2Si3O12(0<b<1))等。藉由以化學組成不同之複數種石榴石結晶相的 固溶體構成螢光體陶瓷層20,而使螢光體陶瓷層20所放出的螢光之螢光光譜更為寬波段化,增加綠色光成分與紅色光成分。因此,可提供放出寬色域的投射光之投影機。 In addition, the first crystal phase constituting the fluorescent ceramic layer 20 may be a solid solution of a plurality of garnet crystal phases having different chemical compositions. Examples of such solid solutions include a garnet crystal phase represented by (Y1 -xCex ) 3Al2Al3O12 (0.001≦x<0.1) and a solid solution of a garnet crystal phase represented by (Lu1 -dCed ) 3Al2Al3O12 (0.001≦ d <0.1) (( 1 - a )( Y1 - xCex ) 3Al5O12‧a ( Lu1 - dCed ) 3Al2Al3O12 (0<a< 1 )). In addition, as such solid solutions, there can be listed a garnet crystal phase represented by ( Y1- xCex ) 3Al2Al3O12 (0.001≦x<0.1) and a solid solution of a garnet crystal phase represented by (Lu1 -zCez ) 2CaMg2Si3O12 (0.0015≦z<0.15 ) ( (1 - b ) (Y1-xCex ) 3Al2Al3O12‧b ( Lu1 -zCez ) 2CaMg2Si3O12 ( 0< b <1)), etc. By forming the fluorescent ceramic layer 20 with a solid solution of multiple garnet crystal phases with different chemical compositions, the fluorescent spectrum of the fluorescent light emitted by the fluorescent ceramic layer 20 is made wider, and the green light component and the red light component are increased. Therefore, a projector that emits projection light with a wide color range can be provided.

此外,構成螢光體陶瓷層20之第1結晶相,亦可包含相對於以上述一般式A3B2C3O12表示之結晶相使化學組成偏移之結晶相。作為此等結晶相,可列舉相對於以(Y1-xCex)3Al2Al3O12(0.001≦x<0.1)表示之結晶相為富Al的(Y1-xCex)3Al2+δAl3O12(δ為正數)。此外,作為此等結晶相,可列舉相對於以(Y1-xCex)3Al2Al3O12(0.001≦x<0.1)表示之結晶相為富Y的(Y1-xCex)3+ζAl2Al3O12(ζ為正數)等。此等結晶相,相對於以一般式A3B2C3O12表示之結晶相,雖使化學組成偏移,但仍維持石榴石構造。藉由使螢光體陶瓷層20由化學組成偏移之結晶相構成,而於螢光體陶瓷層20中產生折射率不同的區域,故激發光L1及螢光更為分散,螢光體陶瓷層20的發光面積變得更小。因此,可提供光展量(Etendue)更小、光利用效率更高之波長轉換元件1及投影機。 In addition, the first crystalline phase constituting the fluorescent ceramic layer 20 may also include a crystalline phase having a chemical composition shifted relative to the crystalline phase represented by the above general formula A 3 B 2 C 3 O 12. Examples of such crystalline phases include (Y 1-x Ce x ) 3 Al 2 Al 3 O 12 (0.001≦x<0.1) which is Al-rich (Y 1-x Ce x ) 3 Al 2+δ Al 3 O 12 (δ is a positive number) relative to the crystalline phase represented by (Y 1-x Ce x ) 3 Al 2 Al 3 O 12 (0.001≦x<0.1). In addition, as such crystalline phases, there can be cited Y-rich (Y1 -xCex ) 3 + ζAl2Al3O12 (ζ is a positive number) relative to the crystalline phase represented by (Y1 -xCex ) 3Al2Al3O12 (0.001≦x< 0.1 ). Such crystalline phases, relative to the crystalline phase represented by the general formula A3B2C3O12 , have a shifted chemical composition, but still maintain a garnet structure. By making the fluorescent ceramic layer 20 consist of a crystalline phase with a shifted chemical composition, regions with different refractive indices are generated in the fluorescent ceramic layer 20, so that the excitation light L1 and the fluorescence are more dispersed, and the light-emitting area of the fluorescent ceramic layer 20 becomes smaller. Therefore, a wavelength conversion element 1 and a projector with smaller etendue and higher light utilization efficiency can be provided.

進一步,螢光體陶瓷層20,亦可包含第1結晶相、及具有石榴石構造以外的構造之不同相。藉由由此等第1結晶相及不同相構成螢光體陶瓷層20,而於螢光體陶瓷層20中產生折射率不同的區域,故激發光L1及螢光更為分散,螢光體陶瓷層20的發光面積變得更小。因此,可提供光展量更小、光利用效率更高之波長轉換元件1及投影機。 Furthermore, the fluorescent ceramic layer 20 may also include the first crystalline phase and different phases having structures other than the garnet structure. By constituting the fluorescent ceramic layer 20 with the first crystalline phase and different phases, regions with different refractive indices are generated in the fluorescent ceramic layer 20, so that the excitation light L1 and the fluorescence are more dispersed, and the luminous area of the fluorescent ceramic layer 20 becomes smaller. Therefore, a wavelength conversion element 1 and a projector with smaller light spread and higher light utilization efficiency can be provided.

以YAG構成之螢光體陶瓷層20,接收從波長轉換元件1的上方入射的光線作為激發光L1,放出螢光。更具體而言,將從後述激發光源射出的光線作為激發光L1對螢光體陶瓷層20照射,藉以從螢光體陶瓷層20放出螢光作為波長轉換 光。亦即,從螢光體陶瓷層20放出的波長轉換光,為波長較激發光L1之波長更長的光線。 The fluorescent ceramic layer 20 composed of YAG receives the light incident from the upper side of the wavelength conversion element 1 as the excitation light L1 and emits fluorescence. More specifically, the light emitted from the excitation light source described later is irradiated on the fluorescent ceramic layer 20 as the excitation light L1, so that the fluorescent ceramic layer 20 emits fluorescence as the wavelength conversion light. That is, the wavelength conversion light emitted from the fluorescent ceramic layer 20 is light having a longer wavelength than the wavelength of the excitation light L1.

本實施形態中,於從螢光體陶瓷層20放出的波長轉換光,包含係黃色系光的螢光。螢光體陶瓷層20,例如,吸收波長380nm以上490nm以下的光線,放出將在波長490nm以上580nm以下的範圍具有螢光峰波長之係黃色系光的螢光。藉由以YAG構成螢光體陶瓷層20,而簡單地實現將在波長490nm以上580nm以下的範圍具有螢光峰波長之螢光放出的螢光體陶瓷層20。 In this embodiment, the wavelength-converted light emitted from the fluorescent ceramic layer 20 includes yellow fluorescence. The fluorescent ceramic layer 20, for example, absorbs light with a wavelength of 380 nm to 490 nm, and emits yellow fluorescence having a fluorescence peak wavelength in the range of 490 nm to 580 nm. By forming the fluorescent ceramic layer 20 with YAG, the fluorescent ceramic layer 20 that emits fluorescence having a fluorescence peak wavelength in the range of 490 nm to 580 nm can be easily realized.

從螢光體陶瓷層20放出的波長轉換光之色度圖的x座標,宜為0.415以下,更宜為0.410以下,進一步宜為0.408以下。若從螢光體陶瓷層20放出的波長轉換光之色度圖的x座標為上述數值,則螢光體陶瓷層20的熱淬滅(temperature quenching)變小,故可實現發光效率高之螢光體陶瓷層20。 The x-coordinate of the chromaticity diagram of the wavelength-converted light emitted from the fluorescent ceramic layer 20 is preferably less than 0.415, more preferably less than 0.410, and further preferably less than 0.408. If the x-coordinate of the chromaticity diagram of the wavelength-converted light emitted from the fluorescent ceramic layer 20 is the above value, the thermal quenching of the fluorescent ceramic layer 20 becomes smaller, so that the fluorescent ceramic layer 20 with high luminous efficiency can be realized.

螢光體陶瓷層20的密度,宜為理論密度之95%以上100%以下,更宜為理論密度之97%以上100%以下。此處,理論密度,係使層中的原子理想地配置之情況的密度。換而言之,理論密度,係假定為螢光體陶瓷層20中無空隙時的密度,為利用結晶構造計算出的值。例如,螢光體陶瓷層20的密度為99%之情況,剩下的1%相當於空隙。亦即,螢光體陶瓷層20的密度越高,則空隙越少。若螢光體陶瓷層20的密度為上述範圍,則螢光體陶瓷層20所放出的總螢光量增加,故可提供放射的光量更多之波長轉換元件1及投影機。 The density of the fluorescent ceramic layer 20 is preferably 95% to 100% of the theoretical density, and more preferably 97% to 100% of the theoretical density. Here, the theoretical density is the density when the atoms in the layer are ideally arranged. In other words, the theoretical density is the density when there is no void in the fluorescent ceramic layer 20, and is a value calculated using the crystal structure. For example, when the density of the fluorescent ceramic layer 20 is 99%, the remaining 1% is equivalent to the void. That is, the higher the density of the fluorescent ceramic layer 20, the fewer the voids. If the density of the fluorescent ceramic layer 20 is within the above range, the total amount of fluorescence emitted by the fluorescent ceramic layer 20 increases, so a wavelength conversion element 1 and a projector with a larger amount of radiated light can be provided.

此外,螢光體陶瓷層20的密度,宜為4.32g/cm3以上4.55g/cm3以下,更宜為4.41g/cm3以上4.55g/cm3以下。如本實施形態所示,以YAG構成螢光體陶瓷層20 的情況,若螢光體陶瓷層20的密度為上述範圍,則螢光體陶瓷層20的密度分別成為理論密度之95%以上100%以下及97%以上100%以下。藉由使螢光體陶瓷層20的密度為上述範圍,而可將螢光體陶瓷層20吸收的激發光L1效率良好地轉換為螢光。亦即,實現發光效率高之螢光體陶瓷層20。 In addition, the density of the fluorescent ceramic layer 20 is preferably 4.32 g/cm 3 or more and 4.55 g/cm 3 or less, and more preferably 4.41 g/cm 3 or more and 4.55 g/cm 3 or less. As shown in the present embodiment, when the fluorescent ceramic layer 20 is formed of YAG, if the density of the fluorescent ceramic layer 20 is within the above range, the density of the fluorescent ceramic layer 20 is 95% or more and 100% or more and 97% or more and 100% or less of the theoretical density, respectively. By making the density of the fluorescent ceramic layer 20 within the above range, the excitation light L1 absorbed by the fluorescent ceramic layer 20 can be efficiently converted into fluorescence. That is, a fluorescent ceramic layer 20 with high luminous efficiency is realized.

螢光體陶瓷層20的膜厚(z軸方向之長度),宜為50μm以上而未滿150μm,更宜為50μm以上而未滿120μm。此外,該螢光體陶瓷層的膜厚,若為70μm以上而未滿120μm則更佳,為80μm以上而未滿110μm則進一步更佳。 The film thickness (length in the z-axis direction) of the fluorescent ceramic layer 20 is preferably 50 μm or more and less than 150 μm, and more preferably 50 μm or more and less than 120 μm. In addition, the film thickness of the fluorescent ceramic layer is preferably 70 μm or more and less than 120 μm, and even more preferably 80 μm or more and less than 110 μm.

進一步,防止反射層30,位於螢光體陶瓷層20的上方。 Furthermore, the anti-reflection layer 30 is located above the fluorescent ceramic layer 20.

防止反射層30,係防止,更具體而言,抑制激發光L1之反射的層。防止反射層30,降低波長轉換元件1中的激發光L1之反射率,使到達螢光體陶瓷層20的激發光L1之量增加。其結果,螢光體陶瓷層20可吸收的激發光L1之量亦增加,故螢光體陶瓷層20放出的螢光之量亦增加。亦即,藉由設置防止反射層30,而使螢光體陶瓷層20放出的螢光之量增加。 The anti-reflection layer 30 is a layer that prevents, or more specifically, suppresses, the reflection of the excitation light L1. The anti-reflection layer 30 reduces the reflectivity of the excitation light L1 in the wavelength conversion element 1, thereby increasing the amount of excitation light L1 reaching the fluorescent ceramic layer 20. As a result, the amount of excitation light L1 that can be absorbed by the fluorescent ceramic layer 20 also increases, so the amount of fluorescence emitted by the fluorescent ceramic layer 20 also increases. That is, by providing the anti-reflection layer 30, the amount of fluorescence emitted by the fluorescent ceramic layer 20 increases.

防止反射層30,例如亦可藉由介電膜、或較可見光範圍之光線的波長更小之周期的微細凹凸構造(所謂的蛾眼構造)等構成。以介電膜構成防止反射層30的情況,防止反射層30,宜包含無機化合物。此一情況,防止反射層30,包含從SiO2、TiO2、Al2O3、ZnO、Nb2O5及MgF等選出之一種以上的無機化合物。 The anti-reflection layer 30 may be formed of, for example, a dielectric film or a fine concavo-convex structure with a period smaller than the wavelength of light in the visible light range (so-called moth-eye structure). When the anti-reflection layer 30 is formed of a dielectric film, the anti-reflection layer 30 preferably contains an inorganic compound. In this case, the anti-reflection layer 30 contains one or more inorganic compounds selected from SiO2 , TiO2 , Al2O3 , ZnO, Nb2O5 , and MgF.

此外,圖1及圖2中,顯示設置防止反射層30之構成,但波長轉換元件1,亦可不具備防止反射層30。 In addition, FIG. 1 and FIG. 2 show the configuration of an anti-reflection layer 30, but the wavelength conversion element 1 may not have an anti-reflection layer 30.

基板10,為圓盤形狀的板材,係支持螢光體陶瓷層20及防止反射層30的基材。馬達4,俯視時設置於基板10之中央。如圖2所示,基板10,具備基板本體11、及光反射層12。 The substrate 10 is a disk-shaped plate and is a base material that supports the fluorescent ceramic layer 20 and the anti-reflection layer 30. The motor 4 is disposed in the center of the substrate 10 when viewed from above. As shown in FIG. 2 , the substrate 10 has a substrate body 11 and a light reflecting layer 12.

基板本體11,宜以熱傳導率高之材料構成。例如,基板本體11,宜以熱傳導率較螢光體陶瓷層20更高之材料構成,但不限於此一形態。基板本體11,例如例示玻璃基板、石英基板、GaN基板、藍寶石基板、Si基板、金屬基板等。此外,基板本體11,亦可由PEN(聚對萘二甲酸乙二酯)薄膜、或PET(聚對苯二甲酸乙二酯)薄膜等樹脂構成。進一步,基板本體11為金屬基板的情況,基板本體11,由Al、Fe及Ti等金屬材料構成。 The substrate body 11 is preferably made of a material with high thermal conductivity. For example, the substrate body 11 is preferably made of a material with higher thermal conductivity than the fluorescent ceramic layer 20, but is not limited to this form. The substrate body 11 is, for example, a glass substrate, a quartz substrate, a GaN substrate, a sapphire substrate, a Si substrate, a metal substrate, etc. In addition, the substrate body 11 can also be made of a resin such as a PEN (polyethylene naphthalate) film or a PET (polyethylene terephthalate) film. Furthermore, when the substrate body 11 is a metal substrate, the substrate body 11 is made of metal materials such as Al, Fe and Ti.

本實施形態中,基板本體11為由Al構成的金屬基板。Al熱傳導率高且輕量,故可提高基板本體11之散熱性,並減輕基板本體11之重量。基板本體11的厚度,例如為1.5mm以下。 In this embodiment, the substrate body 11 is a metal substrate made of Al. Al has high thermal conductivity and is lightweight, so it can improve the heat dissipation of the substrate body 11 and reduce the weight of the substrate body 11. The thickness of the substrate body 11 is, for example, less than 1.5 mm.

此外,基板10具有光反射面13。光反射面13,係螢光體陶瓷層20所位於之側的基板10之一面。本實施形態中,光反射面13,係由光反射層12包含之一面所構成。 In addition, the substrate 10 has a light reflecting surface 13. The light reflecting surface 13 is a surface of the substrate 10 on the side where the fluorescent ceramic layer 20 is located. In this embodiment, the light reflecting surface 13 is composed of a surface included in the light reflecting layer 12.

光反射面13,係將螢光體陶瓷層20放出的螢光予以反射之面。此外,光反射面13,亦反射在螢光體陶瓷層20中未轉換為螢光的激發光L1。光反射面13,將螢光及未轉換為螢光的激發光L1往上方反射。本實施形態中,螢光及激發光L1為可見光範圍的光線,故光反射面13的可見光反射率越高則光的損耗越少。 具體而言,光反射面13的可見光反射率,宜為90%以上100%以下,更宜為95%以上100%以下。若光反射面13的可見光反射率為上述範圍,則將螢光及激發光L1往更上方反射,故往橫向(即平行於光反射面13之方向)的螢光及激發光L1之導波受到抑制,發光面積變得更小。因此,可提供光展量更小、光利用效率更高之波長轉換元件1及投影機。此外,光反射面13的490nm以上780nm以下之波長範圍的光線之反射率,宜為90%以上100%以下,更宜為95%以上100%以下。若光反射面13的490nm以上780nm以下之波長範圍的光線之反射率為上述範圍,則螢光往更上方反射,故往橫向的螢光之導波受到抑制,發光面積變得更小。因此,可提供光展量更小、光利用效率更高之波長轉換元件1及投影機。另,本實施形態中,可見光範圍,係波長380nm以上780nm以下之波長範圍。 The light reflecting surface 13 is a surface that reflects the fluorescence emitted by the fluorescent ceramic layer 20. In addition, the light reflecting surface 13 also reflects the excitation light L1 that is not converted into fluorescence in the fluorescent ceramic layer 20. The light reflecting surface 13 reflects the fluorescence and the excitation light L1 that is not converted into fluorescence upward. In this embodiment, the fluorescence and the excitation light L1 are light rays in the visible light range, so the higher the visible light reflectivity of the light reflecting surface 13, the less light loss. Specifically, the visible light reflectivity of the light reflecting surface 13 is preferably greater than 90% and less than 100%, and more preferably greater than 95% and less than 100%. If the visible light reflectivity of the light reflecting surface 13 is within the above range, the fluorescence and the excitation light L1 are reflected further upward, so the waveguide of the fluorescence and the excitation light L1 in the lateral direction (i.e., the direction parallel to the light reflecting surface 13) is suppressed, and the luminous area becomes smaller. Therefore, a wavelength conversion element 1 and a projector with a smaller light spread and higher light utilization efficiency can be provided. In addition, the reflectivity of the light in the wavelength range of 490nm to 780nm of the light reflecting surface 13 is preferably 90% to 100%, and more preferably 95% to 100%. If the reflectivity of the light in the wavelength range of 490nm to 780nm of the light reflecting surface 13 is within the above range, the fluorescence is reflected further upward, so the waveguide of the fluorescence in the lateral direction is suppressed, and the luminous area becomes smaller. Therefore, a wavelength conversion element 1 and a projector with smaller light spread and higher light utilization efficiency can be provided. In addition, in this embodiment, the visible light range is a wavelength range of 380nm to 780nm.

光反射層12,若可將螢光及未轉換為螢光的激發光L1往上方反射,則以何種材料構成皆可。本實施形態中,光反射層12,係以光散射性粒子121、及使光散射性粒子121分散的黏結劑122構成之複合層。亦即,光反射層12,具有光漫射性(光散射性),藉由光漫射將螢光及未轉換為螢光的激發光L1往上方反射。 The light reflecting layer 12 can be made of any material as long as it can reflect the fluorescence and the excitation light L1 that is not converted into fluorescence upward. In the present embodiment, the light reflecting layer 12 is a composite layer composed of light scattering particles 121 and a binder 122 that disperses the light scattering particles 121. That is, the light reflecting layer 12 has light diffusion (light scattering) and reflects the fluorescence and the excitation light L1 that is not converted into fluorescence upward by light diffusion.

光反射層12,藉由光散射性粒子121與黏結劑122之折射率差而使光線擴散。光散射性粒子121,例如為由無機化合物或樹脂材料構成之填料或白色粒子。更具體而言,光散射性粒子121,可為SiO2、TiO2、Al2O3、ZnO、Nb2O5、ZrO2及CaCO3等無機化合物,亦可為苯乙烯系樹脂及丙烯酸系樹脂等樹脂材料。此外,黏結劑122,宜由具有透光性之丙烯酸系樹脂及矽氧系樹脂等樹脂材料構成。 The light reflecting layer 12 diffuses light by the difference in refractive index between the light scattering particles 121 and the binder 122. The light scattering particles 121 are, for example, fillers or white particles made of inorganic compounds or resin materials. More specifically, the light scattering particles 121 can be inorganic compounds such as SiO2, TiO2, Al2O3 , ZnO , Nb2O5 , ZrO2 , and CaCO3 , or resin materials such as styrene resins and acrylic resins. In addition, the binder 122 is preferably made of resin materials such as acrylic resins and silicone resins that are light-transmissive.

藉由設置光反射層12,而可提高光反射面13的可見光反射率。進一步,藉由以包含光散射性粒子121的複合層構成光反射層12,而可為更提高光反射面13的可見光反射率。亦即,可更為抑制波長轉換元件1中之光的損耗。 By providing the light reflecting layer 12, the visible light reflectivity of the light reflecting surface 13 can be increased. Furthermore, by forming the light reflecting layer 12 with a composite layer including light scattering particles 121, the visible light reflectivity of the light reflecting surface 13 can be further increased. That is, the loss of light in the wavelength conversion element 1 can be further suppressed.

另,光反射層12,亦可為由具有光反射性之金屬構成的金屬層。例如,該金屬,為Ag、Al、或包含其等任一者的合金。光反射層12,宜將該金屬藉由乾式處理或濕式處理而形成。於此等情況中,亦可期待與以包含光散射性粒子121的複合層構成光反射層12之情況相同的作用效果。 In addition, the light reflecting layer 12 may also be a metal layer composed of a metal having light reflectivity. For example, the metal is Ag, Al, or an alloy containing any of them. The light reflecting layer 12 is preferably formed by dry processing or wet processing of the metal. In such a case, the same effect as the case where the light reflecting layer 12 is composed of a composite layer containing light scattering particles 121 can also be expected.

此外,亦可於光反射層12與螢光體陶瓷層20之間,設置接合層。藉由成為此等構成,可使光反射層12與螢光體陶瓷層20更為密接,故可將在螢光體陶瓷層20產生的熱,經由光反射層12,更有效率地往基板本體11傳導。因此,可提供螢光體陶瓷層20的熱淬滅少、效率高之波長轉換元件1。接合層,宜由矽氧系樹脂或環氧系樹脂等透明材料構成。此外,接合層的厚度,宜為1μm以上而未滿100μm,更宜為1μm以上而未滿20μm。 In addition, a bonding layer may be provided between the light reflecting layer 12 and the fluorescent ceramic layer 20. By adopting such a structure, the light reflecting layer 12 and the fluorescent ceramic layer 20 can be more closely connected, so the heat generated in the fluorescent ceramic layer 20 can be more efficiently conducted to the substrate body 11 through the light reflecting layer 12. Therefore, a wavelength conversion element 1 with less thermal quenching of the fluorescent ceramic layer 20 and high efficiency can be provided. The bonding layer is preferably made of a transparent material such as a silicone resin or an epoxy resin. In addition, the thickness of the bonding layer is preferably greater than 1μm and less than 100μm, and more preferably greater than 1μm and less than 20μm.

另,圖1及圖2中,顯示設置光反射層12之構成,但波長轉換元件1,亦可不具備光反射層12。此一情況,基板本體11之表面,成為光反射面13。 In addition, FIG. 1 and FIG. 2 show the structure of providing a light reflecting layer 12, but the wavelength conversion element 1 may not have the light reflecting layer 12. In this case, the surface of the substrate body 11 becomes the light reflecting surface 13.

[投影機的構成] [Projector structure]

如同上述地構成之波長轉換元件1,使用在圖3及圖4所示之投影機100。圖3係顯示本實施形態之投影機100的外觀之立體圖。圖4係本實施形態之投影機100的光學系統之示意圖。以下,利用圖3及圖4,針對本實施形態之投影機100的構成予以說明。 The wavelength conversion element 1 constructed as described above is used in the projector 100 shown in FIG. 3 and FIG. 4. FIG. 3 is a three-dimensional diagram showing the appearance of the projector 100 of this embodiment. FIG. 4 is a schematic diagram of the optical system of the projector 100 of this embodiment. The following uses FIG. 3 and FIG. 4 to explain the structure of the projector 100 of this embodiment.

如圖3及圖4所示,本實施形態之投影機100,具備:光源3、分光鏡(Dichroic mirror)5、波長轉換元件1、顯示元件6、投射光學構件7、及反射鏡8。 As shown in FIG. 3 and FIG. 4 , the projector 100 of this embodiment has: a light source 3, a dichroic mirror 5, a wavelength conversion element 1, a display element 6, a projection optical component 7, and a reflective mirror 8.

光源3,例如為半導體雷射光源或LED(Light Emitting Diode,發光二極體)光源,藉由驅動電流驅動,放出既定顏色(波長)的光線。 The light source 3, for example, is a semiconductor laser light source or an LED (Light Emitting Diode) light source, which is driven by a driving current to emit light of a predetermined color (wavelength).

本實施形態中,光源3為半導體雷射光源。另,光源3所具備之半導體雷射元件,例如為由氮化物半導體材料構成之GaN系半導體雷射元件(雷射晶片)。本實施形態中,係半導體雷射光源之光源3,為多晶片類型之發光裝置。 In this embodiment, the light source 3 is a semiconductor laser light source. In addition, the semiconductor laser element of the light source 3 is, for example, a GaN semiconductor laser element (laser chip) composed of a nitride semiconductor material. In this embodiment, the light source 3, which is a semiconductor laser light source, is a multi-chip type light-emitting device.

作為一例,光源3,將在波長380nm以上490nm以下具有峰值波長之近紫外線至藍光範圍內的雷射光放出。更具體而言,光源3,放出峰值波長為445nm的藍色光。本實施形態之光源3為激發光源的一例。光源3所放出的雷射光,到達分光鏡5。 As an example, light source 3 emits laser light in the range of near-ultraviolet to blue light with a peak wavelength of 380nm to 490nm. More specifically, light source 3 emits blue light with a peak wavelength of 445nm. Light source 3 of this embodiment is an example of an excitation light source. The laser light emitted by light source 3 reaches spectroscope 5.

分光鏡5,對於光源3的光軸以45度的角度配置。本實施形態之分光鏡5,係使藍色光的一部分透射並將另一部分反射,使黃色系螢光透射之分光鏡。 The dichroic mirror 5 is arranged at an angle of 45 degrees to the optical axis of the light source 3. The dichroic mirror 5 of this embodiment transmits a part of the blue light and reflects the other part, so that the yellow fluorescent light is transmitted.

亦即,分光鏡5,具有使從光源3放出的雷射光之波長範圍的光線反射及透射之特性。因而,從光源3放出的雷射光之一部分,不改變進行方向地透射過分光鏡5;該雷射光之另一部分,藉由分光鏡5反射,使進行方向變更90°,前往波長轉換元件1。 That is, the spectroscope 5 has the characteristic of reflecting and transmitting the light in the wavelength range of the laser light emitted from the light source 3. Therefore, a part of the laser light emitted from the light source 3 passes through the spectroscope 5 without changing the direction; the other part of the laser light is reflected by the spectroscope 5, and the direction changes by 90°, and goes to the wavelength conversion element 1.

此處,從光源3放出的雷射光之另一部分,作為激發光L1,到達波長轉換元件1。波長轉換元件1,接收激發光L1,放出包含螢光的反射光L2。更具體而言,反射光L2,包含藉由波長轉換元件1所具備之螢光體陶瓷層20及光反射面13分別波長轉換及反射的光線。更具體而言,反射光L2為,包含以螢光體陶瓷層20產生的黃色系螢光、及未以螢光體陶瓷層20轉換為的螢光之係藍色光的激發光L1之光線。然則,反射光L2中,螢光所占之比例高,故反射光L2為黃色系光。 Here, another part of the laser light emitted from the light source 3 reaches the wavelength conversion element 1 as the excitation light L1. The wavelength conversion element 1 receives the excitation light L1 and emits the reflected light L2 including the fluorescence. More specifically, the reflected light L2 includes the light converted and reflected by the fluorescent ceramic layer 20 and the light reflecting surface 13 respectively provided by the wavelength conversion element 1. More specifically, the reflected light L2 is the light including the yellow fluorescence generated by the fluorescent ceramic layer 20 and the blue light of the excitation light L1 which is not converted by the fluorescent ceramic layer 20. However, the proportion of fluorescence in the reflected light L2 is high, so the reflected light L2 is yellow light.

不改變進行方向地透射過分光鏡5的雷射光,作為透射光L12,到達反射鏡8,藉由反射鏡8正反射,前往分光鏡5的另一方之面。而後,該透射光L12,藉由分光鏡5的另一方之面反射,使進行方向變更90°,前往顯示元件6。 The laser light that passes through the dichroic mirror 5 without changing its direction reaches the reflector 8 as the transmitted light L12, and is reflected by the reflector 8 and goes to the other side of the dichroic mirror 5. Then, the transmitted light L12 is reflected by the other side of the dichroic mirror 5, and its direction is changed by 90°, and goes to the display element 6.

此外,反射光L2,到達分光鏡5。此時,分光鏡5,對於反射光L2之光軸以45度的角度配置,此外,使黃色系螢光透射。因此,到達至分光鏡5的反射光L2之進行方向未變化。 In addition, the reflected light L2 reaches the dichroic mirror 5. At this time, the dichroic mirror 5 is arranged at an angle of 45 degrees to the optical axis of the reflected light L2, and also transmits yellow fluorescent light. Therefore, the direction of the reflected light L2 reaching the dichroic mirror 5 does not change.

藉此,如圖4所示,反射光L2之光軸,與透射光L12之光軸一致,朝向顯示元件6。此時,反射光L2為黃色系光,透射光L12為藍色光,故此等光線所複合出的光線為白色光。亦即,從分光鏡5前往顯示元件6的光線為白色光。 Thus, as shown in FIG4 , the optical axis of the reflected light L2 is consistent with the optical axis of the transmitted light L12 and is directed toward the display element 6. At this time, the reflected light L2 is yellow light, and the transmitted light L12 is blue light, so the light compounded by these light rays is white light. That is, the light from the spectroscope 5 to the display element 6 is white light.

反射光L2與透射光L12的混合光即白色光,前往顯示元件6。此處,若反射光L2為光展量大的光,則相較於顯示元件6的尺寸,向顯示元件6照射的反射光L2之尺寸變大。因此,未照射至顯示元件6之無效(即無法利用)的光成分變多。 The mixed light of the reflected light L2 and the transmitted light L12, i.e., white light, goes to the display element 6. Here, if the reflected light L2 is a light with a large light spread, the size of the reflected light L2 irradiated to the display element 6 becomes larger compared to the size of the display element 6. Therefore, the ineffective (i.e., unusable) light components that are not irradiated to the display element 6 increase.

顯示元件6,係控制通過開口部2a的光線(白色光)而將其作為映像輸出之略平面狀的元件。換而言之,顯示元件6,生成映像用的光線。顯示元件6,具體而言,為具有DMD(Digital Micromirror Device,數位微鏡元件)的DLP(Digital Light Processing,數位光處理)元件。此外,例如,顯示元件6,亦可為反射型液晶面板等。另,於顯示元件6與分光鏡5之間,亦可具備複眼透鏡、偏光轉換元件及鏡桿等。 The display element 6 is a roughly planar element that controls the light (white light) passing through the opening 2a and outputs it as an image. In other words, the display element 6 generates light for the image. Specifically, the display element 6 is a DLP (Digital Light Processing) element having a DMD (Digital Micromirror Device). In addition, for example, the display element 6 can also be a reflective liquid crystal panel. In addition, between the display element 6 and the spectroscope 5, a compound eye lens, a polarization conversion element, and a mirror rod can also be provided.

由顯示元件6生成之映像用的光,藉由投射光學構件7,成為往屏幕放大投射的投射光。 The image light generated by the display element 6 is magnified and projected onto the screen through the projection optical component 7.

投影機100,僅將照射至顯示元件6的光線利用作為投射光。亦即,反射光L2之光展量越小,可作為投影機100之投射光而利用的光線越多。 The projector 100 only uses the light irradiated to the display element 6 as projection light. That is, the smaller the light etendue of the reflected light L2, the more light can be used as the projection light of the projector 100.

[波長轉換元件之光行為] [Light behavior of wavelength conversion elements]

此處,針對波長轉換元件1之光行為,利用本實施形態與比較例予以說明。 Here, the optical behavior of the wavelength conversion element 1 is explained using this embodiment and a comparative example.

圖5A係本實施形態之波長轉換元件1與孔隙構件2的示意圖。圖5B係本實施形態的比較例之波長轉換元件1x與孔隙構件2的示意圖。另,此處為了方便,利用孔隙構件2、波長轉換元件1與1x、激發光L1、反射光L2予以說明。 FIG. 5A is a schematic diagram of the wavelength conversion element 1 and the aperture member 2 of the present embodiment. FIG. 5B is a schematic diagram of the wavelength conversion element 1x and the aperture member 2 of the comparative example of the present embodiment. In addition, for convenience, the aperture member 2, the wavelength conversion elements 1 and 1x, the excitation light L1, and the reflected light L2 are used for explanation.

此處,孔隙構件2為用於評價反射光L2之光展量的大小之構件。孔隙構件2為光吸收構件,係於孔隙構件2之中央部設置有開口部2a的構件。若通過孔隙構件2之開口部2a的光成分之比例相對地多,則可說是反射光L2之光展量小。 Here, the aperture member 2 is a member used to evaluate the size of the light etendue of the reflected light L2. The aperture member 2 is a light absorbing member, and is a member having an opening 2a provided in the center of the aperture member 2. If the proportion of the light component passing through the opening 2a of the aperture member 2 is relatively large, it can be said that the light etendue of the reflected light L2 is small.

比較例之波長轉換元件1x,除了使螢光體陶瓷層20x的厚度較本實施形態之螢光體陶瓷層20更厚(例如200μm)的點以外,為與本實施形態之波長轉換元件1相同的構成。 The wavelength conversion element 1x of the comparative example has the same structure as the wavelength conversion element 1 of the present embodiment, except that the thickness of the fluorescent ceramic layer 20x is thicker (for example, 200 μm) than the fluorescent ceramic layer 20 of the present embodiment.

螢光體陶瓷層20及20x的密度為4.41g/cm3以上4.55g/cm3以下,密度高。亦即,螢光體陶瓷層20及20x中,空隙少而不易發生光散射,故光容易往層之平面方向(亦即,x軸方向或y軸方向)前進,容易發生所謂的導光。 The density of the fluorescent ceramic layers 20 and 20x is 4.41 g/cm 3 or more and 4.55 g/cm 3 or less, which is high. That is, there are few gaps in the fluorescent ceramic layers 20 and 20x and light scattering is not easy to occur, so light is easy to advance in the plane direction of the layer (that is, the x-axis direction or the y-axis direction), and so-called light guiding is easy to occur.

首先,利用圖5A,針對本實施形態之波長轉換元件1予以說明。 First, using Figure 5A, the wavelength conversion element 1 of this embodiment is explained.

若如本實施形態之螢光體陶瓷層20般地厚度非常薄(50μm以上120μm以下),則可將從激發光L1入射至反射光L2射出為止的層之平面方向(此處為x軸方向)的距離D更為縮短。換而言之,本實施形態中,螢光體陶瓷層20之螢光的發光面積(發光點徑)非常小。因此,如圖5A所示,藉由光反射面13反射並從螢光體陶瓷層20射出的反射光L2,容易通過孔隙構件2之開口部2a。通過開口部2a的光線,如同上述,可作為經由顯示元件6及投射光學構件7往屏幕放大投射的光而利用。 If the thickness of the fluorescent ceramic layer 20 is very thin (50 μm or more and 120 μm or less) as in the present embodiment, the distance D in the plane direction of the layer (here, the x-axis direction) from the incidence of the excitation light L1 to the emission of the reflected light L2 can be further shortened. In other words, in the present embodiment, the luminous area (luminous spot diameter) of the fluorescent ceramic layer 20 is very small. Therefore, as shown in FIG. 5A, the reflected light L2 reflected by the light reflecting surface 13 and emitted from the fluorescent ceramic layer 20 can easily pass through the opening 2a of the aperture member 2. The light passing through the opening 2a can be used as light to be magnified and projected to the screen via the display element 6 and the projection optical member 7 as described above.

亦即,本實施形態中,波長轉換元件1所具備之螢光體陶瓷層20的厚度非常薄,故可使螢光的發光面積非常小。因此,通過孔隙構件2之開口部2a的光線多,故可作為投影機100之投射光而利用的光線多。亦即,藉由上述構成,實現光利用效率高之波長轉換元件1。進一步,藉由具備此等波長轉換元件1,而實現光利用效率高之投影機100。 That is, in this embodiment, the thickness of the fluorescent ceramic layer 20 of the wavelength conversion element 1 is very thin, so the fluorescent light emitting area can be made very small. Therefore, more light passes through the opening 2a of the aperture member 2, so more light can be used as the projection light of the projector 100. That is, by the above-mentioned structure, a wavelength conversion element 1 with high light utilization efficiency is realized. Furthermore, by having such a wavelength conversion element 1, a projector 100 with high light utilization efficiency is realized.

接著,利用圖5B,針對比較例之波長轉換元件1x予以說明。 Next, the wavelength conversion element 1x of the comparative example is explained using FIG. 5B .

若如比較例之螢光體陶瓷層20x般厚度非常厚(200μm),則激發光L1入射至反射光L2x射出為止的層之平面方向的距離Dx變得更長。換而言之,比較例中,螢光體陶瓷層20x之螢光的發光面積(發光點徑)變大。因此,如圖5B所示,藉由光反射面13反射而從螢光體陶瓷層20x射出的反射光L2x,容易受到孔隙構件2遮蔽。因此,比較例之波長轉換元件1x,光利用效率低。 If the thickness of the fluorescent ceramic layer 20x in the comparative example is very thick (200μm), the distance Dx in the plane direction of the layer from the incident excitation light L1 to the emission of the reflected light L2x becomes longer. In other words, in the comparative example, the luminous area (luminous spot diameter) of the fluorescent ceramic layer 20x becomes larger. Therefore, as shown in FIG5B, the reflected light L2x emitted from the fluorescent ceramic layer 20x by reflection on the light reflecting surface 13 is easily shielded by the aperture component 2. Therefore, the wavelength conversion element 1x in the comparative example has low light utilization efficiency.

此外,如同上述,於本實施形態中,藉由設置光反射層12,進一步以包含光散射性粒子121的複合層構成光反射層12,而可更為提高光反射面13的可見光反射率。藉此,可更為抑制波長轉換元件1中之光的損耗,故實現光利用效率高之波長轉換元件1。 In addition, as described above, in this embodiment, by providing the light reflecting layer 12, and further forming the light reflecting layer 12 with a composite layer including light scattering particles 121, the visible light reflectivity of the light reflecting surface 13 can be further improved. In this way, the loss of light in the wavelength conversion element 1 can be further suppressed, thereby realizing a wavelength conversion element 1 with high light utilization efficiency.

[實施例] [Implementation example]

此處,於本實施形態的實施例1~3與比較例之波長轉換元件中,針對製造方法與光利用效率予以說明。 Here, in the wavelength conversion element of Examples 1 to 3 and the comparative example of this embodiment, the manufacturing method and light utilization efficiency are explained.

首先,針對螢光體陶瓷層之製造方法予以記述。 First, the manufacturing method of the fluorescent ceramic layer is described.

實施例1~3及比較例之螢光體陶瓷層,皆由以(Y0.9953Ce0.0047)3Al5O12表示之第1結晶相構成。此外,實施例1~3及比較例之螢光體陶瓷層,皆以Ce3+活化螢光體構成。 The fluorescent ceramic layers of Examples 1 to 3 and the comparative example are all composed of the first crystalline phase represented by (Y 0.9953 Ce 0.0047 ) 3 Al 5 O 12. In addition, the fluorescent ceramic layers of Examples 1 to 3 and the comparative example are all composed of Ce 3+ activated fluorescent materials.

實施例1~3及比較例之螢光體陶瓷層,作為化合物粉末,將以下三種作為原料使用。具體而言,使用Y2O3(氧化釔,純度3N,日本YTTRIUM株式會社)、Al2O3(氧化鋁,純度3N,住友化學株式會社)及CeO2(氧化鈰,純度3N,日本YTTRIUM株式會社)。 The fluorescent ceramic layers of Examples 1 to 3 and Comparative Examples use the following three raw materials as compound powders. Specifically, Y2O3 (yttrium oxide, purity 3N, YTTRIUM Co., Ltd., Japan), Al2O3 (aluminum oxide, purity 3N, Sumitomo Chemical Co. , Ltd.) and CeO2 (cathode oxide, purity 3N, YTTRIUM Co., Ltd., Japan) are used.

首先,秤量上述原料,使其成為化學計量組成之化合物(Y0.9953Ce0.0047)3Al5O12。而後,將秤量出的原料與氧化鋁製的球珠(直徑10mm),投入至塑膠製的壺。氧化鋁製的球珠之量,為充填塑膠製的壺之容積的1/3程度之量。其後,將純水投入至塑膠製的壺,利用壺旋轉裝置(日陶化學株式會社製,BALL MILL ANZ-51S),使原料與純水混合。將此一混合實施12小時。如此地,獲得漿狀的混合原料。 First, weigh the above raw materials to make a compound of the stoichiometric composition (Y 0.9953 Ce 0.0047 ) 3 Al 5 O 12 . Then, put the weighed raw materials and alumina balls (diameter 10 mm) into a plastic pot. The amount of alumina balls is about 1/3 of the volume of the plastic pot. Then, pour pure water into the plastic pot and use a pot rotating device (BALL MILL ANZ-51S, manufactured by NITTO CHEMICAL CO., LTD.) to mix the raw materials and pure water. This mixing is carried out for 12 hours. In this way, a slurry-like mixed raw material is obtained.

將漿狀的混合原料,利用乾燥機予以乾燥。具體而言,以覆蓋金屬製的盤之內壁的方式敷設Naflon(註冊商標)片,使混合原料流入Naflon(註冊商標)片的上方。將金屬製的盤、Naflon(註冊商標)片、混合原料,以設定為150℃之乾燥機處理8小時,予以乾燥。其後,將乾燥後的混合原料回收,利用噴霧乾燥裝置將混合原料造粒。另,造粒時,作為黏著劑(黏結劑),使用聚乙烯醇。 The slurry mixed raw material is dried in a dryer. Specifically, a Naflon (registered trademark) sheet is laid to cover the inner wall of a metal plate, and the mixed raw material flows onto the top of the Naflon (registered trademark) sheet. The metal plate, Naflon (registered trademark) sheet, and mixed raw material are dried in a dryer set at 150°C for 8 hours. Afterwards, the dried mixed raw material is recovered and granulated using a spray drying device. In addition, polyvinyl alcohol is used as an adhesive (binder) during granulation.

將造成粒的混合原料,利用電動油壓加壓機(理研精機株式會社製,EMP-5)與圓筒型之模具(外徑58mm、內徑38mm、高度130mm),暫時成型為圓筒型。使成型時的壓力為5MPa/cm2。而後,利用冷均壓加壓裝置,使暫時成型後之成型體正式成型。使正式成型時的壓力為300MPa。另,將正式成型後之成型體,以去除造粒時使用的黏著劑(黏結劑)為目的,施行加熱處理(去黏結劑處理)。使加熱處理的溫度為500℃。此外,使加熱處理的時間為10小時。 The mixed raw materials to be granulated are temporarily molded into a cylindrical shape using an electric hydraulic press (EMP-5 manufactured by Riken Seiki Co., Ltd.) and a cylindrical mold (outer diameter 58mm, inner diameter 38mm, height 130mm). The pressure during molding is set to 5MPa/ cm2 . Then, the temporarily molded body is formally molded using a cold isostatic press device. The pressure during formal molding is set to 300MPa. In addition, the molded body after formal molding is subjected to heat treatment (de-binder treatment) for the purpose of removing the adhesive (binder) used during granulation. The temperature of the heat treatment is set to 500℃. In addition, the time of the heat treatment is set to 10 hours.

利用管狀氣體環境爐,鍛燒加熱處理後之成型體。使鍛燒溫度為1675℃。此外,使鍛燒時間為4小時。使鍛燒氣體環境,為氮與氫的混合氣體環境。另,鍛燒後之鍛燒物的外徑及內徑,分別為43mm及29mm。 The molded body after heat treatment is forged in a tubular gas environment furnace. The forging temperature is 1675℃. In addition, the forging time is 4 hours. The forging gas environment is a mixed gas environment of nitrogen and hydrogen. In addition, the outer diameter and inner diameter of the forged product after forging are 43mm and 29mm respectively.

利用多線鋸,將鍛燒後的圓筒型之鍛燒物切片。切成片的圓筒型之鍛燒物的厚度,約為700μm。 Use a multi-wire saw to slice the cylindrical forged material after forging. The thickness of the sliced cylindrical forged material is about 700μm.

利用研磨裝置,研磨切片後之鍛燒物,施行鍛燒物的厚度之調整。藉由施行此一調整,使鍛燒物成為螢光體陶瓷層。螢光體陶瓷層的厚度,在實施例1為53μm,在實施例2為75μm,在實施例3為106μm,在比較例為206μm。 The forged product after slicing is ground by a grinding device to adjust the thickness of the forged product. By performing this adjustment, the forged product becomes a fluorescent ceramic layer. The thickness of the fluorescent ceramic layer is 53μm in Example 1, 75μm in Example 2, 106μm in Example 3, and 206μm in the comparative example.

另,實施例1~3及比較例之螢光體陶瓷層的外徑及內徑,分別為43mm及29mm。此外,實施例1~3及比較例之螢光體陶瓷層,為深黃色。 In addition, the outer diameter and inner diameter of the fluorescent ceramic layer of Examples 1 to 3 and the comparative example are 43 mm and 29 mm, respectively. In addition, the fluorescent ceramic layer of Examples 1 to 3 and the comparative example is dark yellow.

接著,針對螢光體陶瓷層之評價予以說明。 Next, the evaluation of the fluorescent ceramic layer is explained.

首先,利用阿基米德法,評價實施例1~3及比較例之螢光體陶瓷層的密度。實施例1~3及比較例之螢光體陶瓷層的密度,皆為4.49g/cm3。此外,實施例1~3及比較例之螢光體陶瓷層的密度,皆為Y3Al5O12的理論密度(4.55g/cm3)之98.7%。亦即,實施例1~3及比較例之螢光體陶瓷層的密度,皆為Y3Al5O12的理論密度之97%以上100%以下。 First, the density of the fluorescent ceramic layer of Examples 1 to 3 and the comparative example was evaluated using the Archimedean method. The density of the fluorescent ceramic layer of Examples 1 to 3 and the comparative example was 4.49 g/cm 3 . In addition, the density of the fluorescent ceramic layer of Examples 1 to 3 and the comparative example was 98.7% of the theoretical density (4.55 g/cm 3 ) of Y 3 Al 5 O 12. In other words, the density of the fluorescent ceramic layer of Examples 1 to 3 and the comparative example was 97% or more and 100% or less of the theoretical density of Y 3 Al 5 O 12 .

接著,針對波長轉換元件的製造方法予以記述。 Next, the manufacturing method of the wavelength conversion element is described.

首先,準備Al之圓盤狀的基板本體(直徑50mm、厚度0.5mm)。接著,利用分注裝置,於基板本體塗步包含分散有TiO2粒子之矽氧系樹脂的光反射層,使其成為圓形(外徑46mm、內徑30mm)。此處,光反射層所含之矽氧系樹脂,亦發揮將螢光體陶瓷層與基板本體貼合之黏接劑的功能。 First, prepare an Al disc-shaped substrate body (diameter 50mm, thickness 0.5mm). Then, use a dispensing device to apply a light-reflecting layer containing a silicon-based resin dispersed with TiO2 particles to the substrate body, making it circular (outer diameter 46mm, inner diameter 30mm). Here, the silicon-based resin contained in the light-reflecting layer also functions as an adhesive to bond the fluorescent ceramic layer to the substrate body.

其後,將螢光體陶瓷層,以與塗布為圓形的光反射層重合之方式配置。此處,使光反射層的厚度成為約50μm,藉由金屬製的治具,固定螢光體陶瓷層。其後,藉由利用乾燥機施行加熱處理,而使光反射層硬化。此時之加熱處理的溫度為150℃。另,光反射層所包含之一面即光反射面的可見光反射率,為95%以上。 Afterwards, the fluorescent ceramic layer is arranged so as to overlap with the light reflecting layer coated in a circular shape. Here, the thickness of the light reflecting layer is made to be about 50μm, and the fluorescent ceramic layer is fixed by a metal fixture. Afterwards, the light reflecting layer is hardened by heat treatment using a dryer. The temperature of the heat treatment at this time is 150°C. In addition, the visible light reflectivity of one side of the light reflecting layer, namely the light reflecting surface, is more than 95%.

如此地,可獲得分別具備上述實施例1~3及比較例之螢光體陶瓷層與基板的實施例1~3及比較例之波長轉換元件。 In this way, the wavelength conversion element of Examples 1 to 3 and the comparative example having the fluorescent ceramic layer and substrate of Examples 1 to 3 and the comparative example respectively can be obtained.

進一步,針對波長轉換元件的評價予以說明。 Furthermore, the evaluation of wavelength conversion components is explained.

利用反射型雷射激發方式之對於波長轉換元件的評價裝置,評價實施例1~3及比較例之波長轉換元件。具體而言,該評價裝置中,對旋轉之波長轉換元件照射激發光(雷射光),藉由功率計評價從波長轉換元件放出的螢光之螢光能量。雷射光之波長、輸出及照射點徑(1/e2),分別為455nm、70W及1.2mm。另,此雷射光為高斯光束。此外,波長轉換元件的旋轉速度為7200rpm。於該評價裝置設置孔隙構件,該孔隙構件遮蔽從波長轉換元件放出的螢光之一部分。 此時,例如,波長轉換元件與孔隙構件的距離,為3mm以上100mm以下;孔隙構件之開口部,係開口徑5mm以上10mm以下之圓形的孔。 An evaluation device for wavelength conversion elements using a reflective laser excitation method is used to evaluate the wavelength conversion elements of Examples 1 to 3 and the comparative example. Specifically, in the evaluation device, the rotating wavelength conversion element is irradiated with excitation light (laser light), and the fluorescence energy of the fluorescence emitted from the wavelength conversion element is evaluated by a power meter. The wavelength, output and irradiation spot diameter (1/e 2 ) of the laser light are 455nm, 70W and 1.2mm, respectively. In addition, this laser light is a Gaussian beam. In addition, the rotation speed of the wavelength conversion element is 7200rpm. A pore member is set in the evaluation device, and the pore member shields a part of the fluorescence emitted from the wavelength conversion element. In this case, for example, the distance between the wavelength conversion element and the aperture member is greater than 3 mm and less than 100 mm; the opening of the aperture member is a circular hole with an opening diameter of greater than 5 mm and less than 10 mm.

圖6係顯示本實施形態的實施例1~3及比較例之波長轉換元件的評價結果之圖。具體而言,於圖6,顯示實施例1~3及比較例之波長轉換元件的螢光能量相對值(通過開口部後)、螢光能量相對值(通過開口部前)及結合效率。 FIG6 is a graph showing the evaluation results of the wavelength conversion elements of Examples 1 to 3 and the comparative example of this embodiment. Specifically, FIG6 shows the relative value of the fluorescence energy (after passing through the opening), the relative value of the fluorescence energy (before passing through the opening) and the combination efficiency of the wavelength conversion elements of Examples 1 to 3 and the comparative example.

此處,螢光能量相對值(通過開口部後),係通過孔隙構件的開口部後之各個波長轉換元件放出的螢光之螢光能量的相對值。另,使通過開口部後的比較例之波長轉換元件放出的螢光之螢光能量為100%。 Here, the relative value of fluorescence energy (after passing through the opening) is the relative value of the fluorescence energy of the fluorescence emitted by each wavelength conversion element after passing through the opening of the aperture member. In addition, the fluorescence energy of the fluorescence emitted by the wavelength conversion element of the comparative example after passing through the opening is assumed to be 100%.

此外,螢光能量相對值(通過開口部前),係通過孔隙構件之開口部前的各個波長轉換元件放出的螢光之螢光能量的相對值。另,使通過開口部後的比較例之波長轉換元件放出的螢光之螢光能量為100%。 In addition, the relative value of the fluorescence energy (before passing through the opening) is the relative value of the fluorescence energy of the fluorescence emitted by each wavelength conversion element before passing through the opening of the aperture member. In addition, the fluorescence energy of the fluorescence emitted by the wavelength conversion element of the comparative example after passing through the opening is set to 100%.

此外,結合效率,係相對於螢光能量相對值(通過開口部前)之螢光能量相對值(通過開口部後)的比例。亦即,結合效率,係將螢光能量相對值(通過開口部後)除以螢光能量相對值(通過開口部前)的值。 In addition, the binding efficiency is the ratio of the relative value of the fluorescence energy (after passing through the opening) to the relative value of the fluorescence energy (before passing through the opening). In other words, the binding efficiency is the value obtained by dividing the relative value of the fluorescence energy (after passing through the opening) by the relative value of the fluorescence energy (before passing through the opening).

在投影機,將通過開口部後的螢光,作為投射光之一部分而利用。亦即,螢光能量相對值(通過開口部後)越大,則可說是能夠作為投影機之投射光而利用的螢光越多。 In a projector, the fluorescent light that passes through the opening is used as part of the projection light. In other words, the greater the relative value of the fluorescent energy (after passing through the opening), the more fluorescent light can be used as the projection light of the projector.

如圖6所示,實施例1、實施例2、實施例3及比較例之波長轉換元件的結合效率,分別為85%、86%、84%及81%。亦即,實施例之結合效率,皆較比較例之結合效率更高。結合效率越高,則表示產生的螢光中之通過開口部的光線越多,亦即,如圖5A及圖5B所示,表示波長轉換元件放出的螢光之發光面積越小。亦即,實施例1~3之波長轉換元件放出的螢光之發光面積,較比較例之波長轉換元件放出的螢光之發光面積更小,表示實施例之波長轉換元件光利用效率高。 As shown in FIG6 , the combination efficiency of the wavelength conversion elements of Example 1, Example 2, Example 3 and the comparative example is 85%, 86%, 84% and 81% respectively. That is, the combination efficiency of the examples is higher than that of the comparative example. The higher the combination efficiency, the more light passing through the opening in the generated fluorescence, that is, as shown in FIG5A and FIG5B , the smaller the luminous area of the fluorescence emitted by the wavelength conversion element. That is, the luminous area of the fluorescence emitted by the wavelength conversion element of Examples 1 to 3 is smaller than the luminous area of the fluorescence emitted by the wavelength conversion element of the comparative example, indicating that the wavelength conversion element of the example has a high light utilization efficiency.

此外,如圖6所示,可清楚得知藉由使實施例1~3之螢光體陶瓷層的厚度,位於50μm以上120μm以下之範圍,相較於比較例,成為非常高的結合效率。亦即,藉由使上述本實施形態之螢光體陶瓷層20的厚度為50μm以上120μm以下之範圍,而實現光利用效率高之波長轉換元件1。 In addition, as shown in FIG. 6 , it can be clearly seen that by making the thickness of the fluorescent ceramic layer of Examples 1 to 3 within the range of 50 μm to 120 μm, the bonding efficiency is very high compared to the comparative example. That is, by making the thickness of the fluorescent ceramic layer 20 of the present embodiment above within the range of 50 μm to 120 μm, a wavelength conversion element 1 with high light utilization efficiency is realized.

此外,實施例1、實施例2、實施例3及比較例之波長轉換元件的螢光能量相對值(通過開口部後),分別為103%、106%、105%及100%。亦即,實施例1~3中,螢光能量相對值(通過開口部後),皆較比較例的螢光能量相對值(通過開口部後)更高。而實施例1~3中,螢光體陶瓷層的厚度為76μm之實施例2、及螢光體陶瓷層的厚度為106μm之實施例3之波長轉換元件的螢光能量相對值(通過開口部後)更高。 In addition, the relative values of the fluorescent energy (after passing through the opening) of the wavelength conversion elements of Example 1, Example 2, Example 3 and the comparative example are 103%, 106%, 105% and 100%, respectively. That is, the relative values of the fluorescent energy (after passing through the opening) in Examples 1 to 3 are higher than the relative values of the fluorescent energy (after passing through the opening) in the comparative example. Among Examples 1 to 3, the relative values of the fluorescent energy (after passing through the opening) of the wavelength conversion elements of Example 2 in which the thickness of the fluorescent ceramic layer is 76μm and Example 3 in which the thickness of the fluorescent ceramic layer is 106μm are higher.

此外,如圖6所示,可清楚得知藉由使實施例2及3之螢光體陶瓷層的厚度位於70μm以上120μm以下之範圍,相較於比較例,成為非常高的螢光能量相對值(通過開口部後)。亦即,藉由使上述本實施形態之螢光體陶瓷層20的厚度為70μm以上120μm以下之範圍,而實現光利用效率更高之波長轉換元件1。 In addition, as shown in FIG. 6 , it can be clearly seen that by making the thickness of the fluorescent ceramic layer of Examples 2 and 3 within the range of 70 μm to 120 μm, a very high relative value of fluorescent energy (after passing through the opening) is achieved compared to the comparative example. That is, by making the thickness of the fluorescent ceramic layer 20 of the present embodiment above within the range of 70 μm to 120 μm, a wavelength conversion element 1 with higher light utilization efficiency is realized.

進一步,實施例1、實施例2、實施例3及比較例之波長轉換元件的螢光能量相對值(通過開口部前),分別為121%、124%、125%及124%。螢光體陶瓷層的厚度最薄之53μm的實施例1之波長轉換元件的螢光能量相對值(通過開口部前),較實施例2及3與比較例之波長轉換元件的螢光能量相對值(通過開口部前)更低。發明人認為其理由係因在實施例1之波長轉換元件,由於螢光體陶瓷層的厚度薄,而使螢光體陶瓷層無法充分吸收雷射光之緣故。 Furthermore, the relative values of the fluorescence energy of the wavelength conversion elements of Example 1, Example 2, Example 3 and the comparative example (before passing through the opening) are 121%, 124%, 125% and 124%, respectively. The relative value of the fluorescence energy of the wavelength conversion element of Example 1, where the thickness of the fluorescent ceramic layer is the thinnest at 53μm (before passing through the opening), is lower than the relative values of the fluorescence energy of the wavelength conversion elements of Examples 2 and 3 and the comparative example (before passing through the opening). The inventor believes that the reason is that in the wavelength conversion element of Example 1, the fluorescent ceramic layer is thin, so that the fluorescent ceramic layer cannot fully absorb the laser light.

此處,進一步,於本實施形態的實施例4之波長轉換元件中,針對製造方法與光利用效率予以說明。 Here, the manufacturing method and light utilization efficiency are further described in the wavelength conversion element of Example 4 of this embodiment.

首先,針對本實施形態的實施例4之波長轉換元件所具備的螢光體陶瓷層之製造方法予以記述。 First, the manufacturing method of the fluorescent ceramic layer of the wavelength conversion element of Example 4 of this embodiment is described.

實施例4之螢光體陶瓷層,皆由以(Y0.997Ce0.003)3Al5O12表示之第1結晶相構成。此外,實施例4之螢光體陶瓷層,皆以Ce3+賦活螢光體構成。 The fluorescent ceramic layers of Example 4 are all composed of the first crystalline phase represented by (Y 0.997 Ce 0.003 ) 3 Al 5 O 12. In addition, the fluorescent ceramic layers of Example 4 are all composed of Ce 3+ activated phosphors.

在實施例4,除了秤量原料,使其成為化學計量組成之化合物(Y0.997Ce0.003)3Al5O12以外,以與實施例1~3相同的順序獲得鍛燒物。亦即,實施例1~3之螢光體陶瓷層,與實施例4之螢光體陶瓷層的主要差異點,係Y與Ce之組成比不同的點。 In Example 4, except that the raw materials are weighed to form a compound of a stoichiometric composition of (Y 0.997 Ce 0.003 ) 3 Al 5 O 12 , the sintered product is obtained in the same order as in Examples 1 to 3. That is, the main difference between the fluorescent ceramic layers of Examples 1 to 3 and the fluorescent ceramic layer of Example 4 is the different composition ratio of Y to Ce.

實施例4之螢光體陶瓷層的厚度為103μm。 The thickness of the fluorescent ceramic layer in Example 4 is 103μm.

另,實施例4之螢光體陶瓷層的外徑及內徑為41mm及27mm。此外,實施例4之螢光體陶瓷層,為深黃色。 In addition, the outer diameter and inner diameter of the fluorescent ceramic layer of Example 4 are 41 mm and 27 mm. In addition, the fluorescent ceramic layer of Example 4 is dark yellow.

接著,針對螢光體陶瓷層之評價予以說明。 Next, the evaluation of the fluorescent ceramic layer is explained.

首先,利用阿基米德法,評價實施例4之螢光體陶瓷層的密度。實施例4之螢光體陶瓷層的密度,為4.48g/cm3。此外,實施例4之螢光體陶瓷層的密度,皆為Y3Al5O12的理論密度(4.55g/cm3)之98.4%。亦即,實施例4之螢光體陶瓷層的密度,為Y3Al5O12的理論密度之97%以上100%以下。 First, the density of the fluorescent ceramic layer of Example 4 was evaluated using the Archimedean method. The density of the fluorescent ceramic layer of Example 4 was 4.48 g/cm 3 . In addition, the density of the fluorescent ceramic layer of Example 4 was 98.4% of the theoretical density (4.55 g/cm 3 ) of Y 3 Al 5 O 12. In other words, the density of the fluorescent ceramic layer of Example 4 was 97% or more and 100% or less of the theoretical density of Y 3 Al 5 O 12 .

另,如同上述,本實施形態之螢光體陶瓷層20,由具有Ce3+及Ce4+的YAG構成,亦即,螢光體陶瓷層20,包含Ce3+及Ce4+。而接著利用硬X射線XAFS裝置,評價實施例4之螢光體陶瓷層的Ce3+存在比及Ce4+存在比。具體而言,利用硬X射線XAFS裝置,在5687eV~5777eV的範圍取得實施例4之螢光體陶瓷層的XAFS光譜。對該取得的XAFS光譜,施行Ce3+之參考光譜及Ce4+之參考光譜的擬合解析,藉以評價Ce3+存在比及Ce4+存在比。另,為了獲得Ce3+之參考光譜及Ce4+之參考光譜,而將CeO2及CeF3以同樣的條件評價。 In addition, as described above, the fluorescent ceramic layer 20 of the present embodiment is composed of YAG having Ce 3+ and Ce 4+ , that is, the fluorescent ceramic layer 20 contains Ce 3+ and Ce 4+ . Then, the Ce 3+ abundance ratio and Ce 4+ abundance ratio of the fluorescent ceramic layer of Example 4 are evaluated using a hard X-ray XAFS device. Specifically, the XAFS spectrum of the fluorescent ceramic layer of Example 4 is obtained in the range of 5687eV~5777eV using a hard X-ray XAFS device. The obtained XAFS spectrum is subjected to a fitting analysis of a reference spectrum of Ce 3+ and a reference spectrum of Ce 4+ to evaluate the Ce 3+ abundance ratio and the Ce 4+ abundance ratio. In addition, in order to obtain the reference spectra of Ce 3+ and Ce 4+ , CeO 2 and CeF 3 were evaluated under the same conditions.

表1為顯示實施例4之螢光體陶瓷層的Ce3+存在比及Ce4+存在比之表。如表1所示,實施例4之螢光體陶瓷層的Ce3+存在比及Ce4+存在比,分別為78.3%及21.7%。於實施例4之螢光體陶瓷層中,滿足Ce3+×100%/(Ce3++Ce4+)≧60%,亦即,Ce3+存在比為60%以上。 Table 1 is a table showing the Ce 3+ abundance ratio and Ce 4+ abundance ratio of the fluorescent ceramic layer of Example 4. As shown in Table 1, the Ce 3+ abundance ratio and Ce 4+ abundance ratio of the fluorescent ceramic layer of Example 4 are 78.3% and 21.7%, respectively. In the fluorescent ceramic layer of Example 4, Ce 3+ ×100%/(Ce 3+ +Ce 4+ )≧60% is satisfied, that is, the Ce 3+ abundance ratio is 60% or more.

[表1]

Figure 111122943-A0305-02-0027-2
[Table 1]
Figure 111122943-A0305-02-0027-2

接著,針對實施例4之波長轉換元件的製造方法予以記述。 Next, the manufacturing method of the wavelength conversion element of Example 4 is described.

首先,作為光反射層,準備塗Ag的Al之圓盤狀的基板本體(直徑50mm、厚度0.5mm)。另,於此基板本體之中心部,開設螺孔。接著,於此基板本體,設置螢光體陶瓷層。 First, prepare a disc-shaped substrate body (diameter 50mm, thickness 0.5mm) coated with Ag on Al as a light-reflecting layer. Also, open a screw hole in the center of this substrate body. Then, set a fluorescent ceramic layer on this substrate body.

於螢光體陶瓷層的內側,設置中心部開設有螺孔的Al之圓盤狀的第1板構件(外徑26.5mm、厚度100μm)。另,螢光體陶瓷層為螢光環;第1板構件,設置於環狀的內側。而後,進一步,以與螢光體陶瓷層及第1板構件重疊的方式,設置中心部開設有螺孔的Al之圓盤狀的第2板構件(外徑29mm、厚度200μm)。而後,將基板本體、第1板構件及第2板構件予以螺著固定。如此地,固定螢光體陶瓷層,獲得波長轉換元件。亦即,實施例4之波長轉換元件中,螢光體陶瓷層,係藉由基板本體與第2板構件而包夾固定。 On the inner side of the fluorescent ceramic layer, a first plate member (outer diameter 26.5mm, thickness 100μm) of Al disk-shaped with a screw hole in the center is set. In addition, the fluorescent ceramic layer is a fluorescent ring; the first plate member is set on the inner side of the ring. Then, further, a second plate member (outer diameter 29mm, thickness 200μm) of Al disk-shaped with a screw hole in the center is set in a manner overlapping with the fluorescent ceramic layer and the first plate member. Then, the substrate body, the first plate member and the second plate member are screwed and fixed. In this way, the fluorescent ceramic layer is fixed to obtain a wavelength conversion element. That is, in the wavelength conversion element of Example 4, the fluorescent ceramic layer is sandwiched and fixed by the substrate body and the second plate component.

如此地,獲得實施例4之螢光體陶瓷層及波長轉換元件。 In this way, the fluorescent ceramic layer and wavelength conversion element of Example 4 are obtained.

進一步,針對波長轉換元件的評價予以說明。 Furthermore, the evaluation of wavelength conversion components is explained.

將實施例4之波長轉換元件,以與實施例1~3相同的方法評價。 The wavelength conversion element of Example 4 was evaluated in the same manner as Examples 1 to 3.

圖7係顯示本實施形態的實施例4之波長轉換元件的評價結果之圖。具體而言,於圖7,顯示實施例4之波長轉換元件的螢光能量相對值(通過開口部後)、螢光能量相對值(通過開口部前)及結合效率。另,於圖7,為了比較,亦顯示實施例1~3及比較例之波長轉換元件的螢光能量相對值(通過開口部後)、螢光能量相對值(通過開口部前)及結合效率。 FIG. 7 is a diagram showing the evaluation results of the wavelength conversion element of Example 4 of this embodiment. Specifically, FIG. 7 shows the relative value of the fluorescence energy (after passing through the opening), the relative value of the fluorescence energy (before passing through the opening) and the combination efficiency of the wavelength conversion element of Example 4. In addition, FIG. 7 also shows the relative value of the fluorescence energy (after passing through the opening), the relative value of the fluorescence energy (before passing through the opening) and the combination efficiency of the wavelength conversion elements of Examples 1 to 3 and the comparative example for comparison.

此處,螢光能量相對值(通過開口部後),係通過孔隙構件的開口部後之波長轉換元件放出的螢光之螢光能量的相對值。另,使通過開口部後的比較例之波長轉換元件放出的螢光之螢光能量為100%。 Here, the relative value of fluorescence energy (after passing through the opening) is the relative value of the fluorescence energy of the fluorescence emitted by the wavelength conversion element after passing through the opening of the aperture member. In addition, the fluorescence energy of the fluorescence emitted by the wavelength conversion element of the comparative example after passing through the opening is assumed to be 100%.

此外,螢光能量相對值(通過開口部前),係通過孔隙構件的開口部前之波長轉換元件放出的螢光之螢光能量的相對值。另,使通過開口部後的比較例之波長轉換元件放出的螢光之螢光能量為100%。 In addition, the relative value of the fluorescence energy (before passing through the opening) is the relative value of the fluorescence energy emitted by the wavelength conversion element before passing through the opening of the aperture member. In addition, the fluorescence energy of the fluorescence emitted by the wavelength conversion element of the comparative example after passing through the opening is set to 100%.

此外,結合效率,係相對於螢光能量相對值(通過開口部前)之螢光能量相對值(通過開口部後)的比例。亦即,結合效率,係將螢光能量相對值(通過開口部後)除以螢光能量相對值(通過開口部前)的值。 In addition, the binding efficiency is the ratio of the relative value of the fluorescence energy (after passing through the opening) to the relative value of the fluorescence energy (before passing through the opening). In other words, the binding efficiency is the value obtained by dividing the relative value of the fluorescence energy (after passing through the opening) by the relative value of the fluorescence energy (before passing through the opening).

如圖7所示,實施例4之波長轉換元件的結合效率為85%。此外,如同上述,比較例之波長轉換元件的結合效率為81%。結合效率較高的實施例4之波長轉換元件,產生的螢光中之通過開口部的光線更多、螢光的發光面積更小。例如,如圖5A及圖5B所示,於實施例4之波長轉換元件中,通過孔隙構件2之開口部2a的光線多,故可作為投影機100之投射光而利用的光線多。亦即,表示實施例4之波長轉換元件光利用效率高。 As shown in FIG. 7 , the wavelength conversion element of Example 4 has a coupling efficiency of 85%. In addition, as mentioned above, the wavelength conversion element of the comparative example has a coupling efficiency of 81%. The wavelength conversion element of Example 4 with a higher coupling efficiency generates more light passing through the opening portion of the fluorescence and a smaller luminous area of the fluorescence. For example, as shown in FIG. 5A and FIG. 5B , in the wavelength conversion element of Example 4, more light passes through the opening portion 2a of the aperture member 2, so more light can be used as the projection light of the projector 100. That is, it means that the wavelength conversion element of Example 4 has a high light utilization efficiency.

進一步,實施例4之波長轉換元件的螢光能量相對值(通過開口部後)及螢光能量相對值(通過開口部前),分別為108%及128%。相較於實施例1~3之波長轉換元件的螢光能量相對值(通過開口部後)及螢光能量相對值(通過開口部前),此值為較高的值。 Furthermore, the relative value of the fluorescence energy of the wavelength conversion element of Example 4 (after passing through the opening) and the relative value of the fluorescence energy (before passing through the opening) are 108% and 128%, respectively. Compared with the relative value of the fluorescence energy of the wavelength conversion element of Examples 1 to 3 (after passing through the opening) and the relative value of the fluorescence energy (before passing through the opening), this value is a higher value.

如同上述,實施例4之螢光體陶瓷層中,Ce3+存在比為60%以上,Ce4+的存在比少,未滿40%。因此,Ce4+所造成的非發光緩和損耗減少,故Ce3+存在比為60%以上的實施例4之螢光體陶瓷層,發光效率變高。因此,實施例4之波長轉換元件,藉由具備此等螢光體陶瓷層,可提高光利用效率。進一步,在使投影機具備此等波長轉換元件1之情況,可提高投影機的光利用效率。例如,可實現消耗電力低之投影機。 As described above, in the fluorescent ceramic layer of Example 4, the Ce 3+ existence ratio is more than 60%, and the Ce 4+ existence ratio is less than 40%. Therefore, the non-luminescent slowdown loss caused by Ce 4+ is reduced, so the fluorescent ceramic layer of Example 4 with a Ce 3+ existence ratio of more than 60% has a higher luminous efficiency. Therefore, the wavelength conversion element of Example 4 can improve the light utilization efficiency by having such a fluorescent ceramic layer. Furthermore, when a projector is equipped with such a wavelength conversion element 1, the light utilization efficiency of the projector can be improved. For example, a projector with low power consumption can be realized.

此外,由於Ce4+所造成的非發光緩和損耗減少,故實施例4之螢光體陶瓷層的發熱減少。因此,具備此等螢光體陶瓷層之投影機中,可提高激發光L1之最大輸入能量,亦即,可實現高輸出之投影機。 In addition, since the non-luminescent slowing loss caused by Ce 4+ is reduced, the heat generation of the fluorescent ceramic layer of Example 4 is reduced. Therefore, in a projector equipped with such a fluorescent ceramic layer, the maximum input energy of the excitation light L1 can be increased, that is, a high-output projector can be realized.

(變形例1) (Variant 1)

實施形態之螢光體陶瓷層20,僅由第1結晶相構成,但未限定於此一形態。此處,針對具備包含第1結晶相與第2結晶相的螢光體陶瓷層20a之波長轉換元件1a予以說明。 The fluorescent ceramic layer 20 of the embodiment is composed of only the first crystalline phase, but is not limited to this form. Here, a wavelength conversion element 1a having a fluorescent ceramic layer 20a including the first crystalline phase and the second crystalline phase is described.

[波長轉換元件的構成] [Structure of wavelength conversion element]

首先,利用圖式,針對本變形例之波長轉換元件1a的構成予以說明。圖8係本變形例之波長轉換元件1a的立體圖。圖9係顯示圖8的IX-IX線之波長轉換元件1a的截斷面之剖面圖。 First, the structure of the wavelength conversion element 1a of this variant is explained using diagrams. FIG8 is a three-dimensional diagram of the wavelength conversion element 1a of this variant. FIG9 is a cross-sectional diagram showing the cross-section of the wavelength conversion element 1a along line IX-IX of FIG8 .

本變形例之波長轉換元件1a,除了具備螢光體陶瓷層20a的點以外,具有與實施形態之波長轉換元件1相同的構成。亦即,如圖8及圖9所示,波長轉換元件1a,具備具有光反射面13的基板10、螢光體陶瓷層20a、及防止反射層30。 The wavelength conversion element 1a of this variant has the same structure as the wavelength conversion element 1 of the embodiment except that it has a fluorescent ceramic layer 20a. That is, as shown in Figures 8 and 9, the wavelength conversion element 1a has a substrate 10 having a light reflecting surface 13, a fluorescent ceramic layer 20a, and an anti-reflection layer 30.

另,本變形例中,波長轉換元件1a,亦為使用在投影機,接收激發光L1,放出包含螢光的反射光之螢光輪。 In addition, in this variation, the wavelength conversion element 1a is also used in a projector to receive the excitation light L1 and emit a fluorescent wheel containing reflected light including fluorescence.

螢光體陶瓷層20a,包含第1結晶相與第2結晶相。更具體而言,本變形例中,螢光體陶瓷層20a,由第1結晶相與第2結晶相構成。 The fluorescent ceramic layer 20a includes a first crystalline phase and a second crystalline phase. More specifically, in this variation, the fluorescent ceramic layer 20a is composed of a first crystalline phase and a second crystalline phase.

第1結晶相,具有如實施形態所記載的構成。 The first crystalline phase has the structure described in the embodiment.

此外,第2結晶相,係具有與石榴石構造不同的構造之結晶相。亦即,第2結晶相,具備與第1結晶相所具有之構造不同的構造。因此,第1結晶相之折射率,與第2結晶相之折射率彼此不同。 In addition, the second crystal phase is a crystal phase having a structure different from the garnet structure. That is, the second crystal phase has a structure different from the structure of the first crystal phase. Therefore, the refractive index of the first crystal phase and the refractive index of the second crystal phase are different from each other.

將螢光體陶瓷層20a予以剖面觀察的情況,使顯示螢光體陶瓷層20a之影像的面積全體為100%時,顯示第1結晶相的面積,例如為10%以上99%以下。另,顯示第1結晶相的面積不限於此,例如可為75%以上98%以下,亦可為85%以上95%以下。亦即,本變形例之螢光體陶瓷層20a,主要包含第1結晶相。 When the fluorescent ceramic layer 20a is observed in cross section, when the area showing the image of the fluorescent ceramic layer 20a is 100%, the area showing the first crystalline phase is, for example, 10% to 99%. In addition, the area showing the first crystalline phase is not limited thereto, for example, it can be 75% to 98%, or 85% to 95%. That is, the fluorescent ceramic layer 20a of this variant mainly includes the first crystalline phase.

作為一例,本變形例之第2結晶相,係具有鈣鈦礦構造之結晶相,但不限於此一型態,亦可為具有與石榴石構造及鈣鈦礦構造不同的構造之結晶相。 As an example, the second crystalline phase of this variant is a crystalline phase having a calcite structure, but it is not limited to this type and may also be a crystalline phase having a structure different from the garnet structure and the calcite structure.

鈣鈦礦構造,係以EFO3之一般式表示的結晶構造。於元素E,應用Ca、Y、La、Ce、Pr、Nd、Sm、Eu、Gd、Tb及Lu等稀土族元素;於元素F,應用Mg、Al、Si、Ga及Sc等元素。作為此等石榴石構造,可列舉YAP(釔鋁鈣鈦礦(Yttrium Aluminum Perovskite))等。本變形例中,第2結晶相,以(Y1-yCey)AlO3(0≦y<0.1)表示,亦即以YAP表示。 The calcite structure is a crystal structure represented by the general formula of EFO 3. As the element E, rare earth elements such as Ca, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb and Lu are used; as the element F, elements such as Mg, Al, Si, Ga and Sc are used. As such garnet structures, YAP (Yttrium Aluminum Perovskite) and the like can be cited. In this modification, the second crystal phase is represented by (Y 1-y Ce y )AlO 3 (0≦y<0.1), that is, YAP.

另,第2結晶相,亦可為化學組成不同之複數種鈣鈦礦結晶相的固溶體。 In addition, the second crystalline phase can also be a solid solution of multiple calcium-titanium crystalline phases with different chemical compositions.

此外,第2結晶相,亦可包含相對於以上述一般式EFO3表示之結晶相使化學組成偏移之結晶相。 In addition, the second crystalline phase may include a crystalline phase having a chemical composition shifted relative to the crystalline phase represented by the above general formula EFO 3 .

另,本變形例之螢光體陶瓷層20a,僅由第1結晶相及第2結晶相構成,亦即,不含具有與石榴石構造及鈣鈦礦構造不同的構造之結晶相。 In addition, the fluorescent ceramic layer 20a of this variation is composed only of the first crystal phase and the second crystal phase, that is, it does not contain a crystal phase having a structure different from the garnet structure and the calcite structure.

本變形例中,表示第2結晶相的材料,作為一例為YAP,但不限於此一材料。此外,宜以使表示第2結晶相的材料之折射率,與表示具有石榴石構造之第1結晶相的材料(此處為YAG)之折射率的差,為0.05以上0.5以下之方式,選擇表示第2結晶相的材料。藉此,如同上述,第1結晶相之折射率,與第2結晶相之折射率成為彼此不同。另,表示第2結晶相的材料之折射率與表示第1結晶相的材料之折射率的差,更宜為0.06以上0.3以下,進一步宜為0.07以上0.15以下。 In this modification, the material representing the second crystal phase is YAP as an example, but is not limited to this material. In addition, it is preferable to select the material representing the second crystal phase in such a way that the difference between the refractive index of the material representing the second crystal phase and the refractive index of the material representing the first crystal phase having a garnet structure (here, YAG) is 0.05 or more and 0.5 or less. Thereby, as described above, the refractive index of the first crystal phase and the refractive index of the second crystal phase become different from each other. In addition, the difference between the refractive index of the material representing the second crystal phase and the refractive index of the material representing the first crystal phase is more preferably 0.06 or more and 0.3 or less, and further preferably 0.07 or more and 0.15 or less.

此外,例如,本變形例之第2結晶相為具有與石榴石構造及鈣鈦礦構造不同的構造之結晶相的情況,作為表示第2結晶相的材料,宜為Al2O3、Y2O3、Y4Al2O9、Lu2O3及Lu4Al2O9等。 Furthermore, for example, when the second crystal phase of the present modification example is a crystal phase having a structure different from the garnet structure and the calcite structure , suitable materials for representing the second crystal phase are Al2O3 , Y2O3 , Y4Al2O9 , Lu2O3 , and Lu4Al2O9 .

螢光體陶瓷層20a,接收從波長轉換元件1a的上方入射的光線作為激發光L1,放出螢光。更具體而言,將從後述激發光源射出的光線作為激發光L1對螢光體陶瓷層20a照射,藉以從螢光體陶瓷層20a放出螢光作為波長轉換光。亦即,從螢光體陶瓷層20a放出的波長轉換光,為波長較激發光L1之波長更長的光線。 The fluorescent ceramic layer 20a receives the light incident from the upper side of the wavelength conversion element 1a as the excitation light L1 and emits fluorescence. More specifically, the light emitted from the excitation light source described later is irradiated on the fluorescent ceramic layer 20a as the excitation light L1, so that the fluorescent ceramic layer 20a emits fluorescence as the wavelength conversion light. That is, the wavelength conversion light emitted from the fluorescent ceramic layer 20a is light having a longer wavelength than the wavelength of the excitation light L1.

本變形例中,於從螢光體陶瓷層20a放出的波長轉換光,包含係黃色系光的螢光。螢光體陶瓷層20a,例如,吸收波長380nm以上490nm以下的光線,放出在波長490nm以上580nm以下的範圍具有螢光峰波長之係黃色系光的螢光。藉由以YAG及YAP構成螢光體陶瓷層20a,而簡單地實現將在波長490nm以上580nm以下的範圍具有螢光峰波長之螢光放出的螢光體陶瓷層20a。 In this modification, the wavelength-converted light emitted from the fluorescent ceramic layer 20a includes yellow fluorescence. The fluorescent ceramic layer 20a, for example, absorbs light with a wavelength of 380 nm to 490 nm, and emits yellow fluorescence with a fluorescence peak wavelength in the range of 490 nm to 580 nm. By forming the fluorescent ceramic layer 20a with YAG and YAP, the fluorescent ceramic layer 20a that emits fluorescence with a fluorescence peak wavelength in the range of 490 nm to 580 nm can be easily realized.

從螢光體陶瓷層20a放出的波長轉換光之色度圖的x座標,宜為0.415以下,更宜為0.410以下,進一步宜為0.408以下。若從螢光體陶瓷層20a放出的波長轉換光之色度圖的x座標為上述數值,則螢光體陶瓷層20a的熱淬滅變小,故可實現發光效率高之螢光體陶瓷層20a。 The x-coordinate of the chromaticity diagram of the wavelength-converted light emitted from the fluorescent ceramic layer 20a is preferably less than 0.415, more preferably less than 0.410, and further preferably less than 0.408. If the x-coordinate of the chromaticity diagram of the wavelength-converted light emitted from the fluorescent ceramic layer 20a is the above value, the thermal quenching of the fluorescent ceramic layer 20a becomes smaller, so the fluorescent ceramic layer 20a with high luminous efficiency can be realized.

螢光體陶瓷層20a的密度,宜為理論密度之95%以上100%以下,更宜為理論密度之97%以上100%以下。此處,理論密度,係使層中的原子理想地配置之情況的密度。換而言之,理論密度,係假定為螢光體陶瓷層20a中無空隙時的密度, 為利用結晶構造計算出的值。例如,螢光體陶瓷層20a的密度為99%之情況,剩下的1%相當於空隙。亦即,螢光體陶瓷層20a的密度越高,則空隙越少。若螢光體陶瓷層20a的密度為上述範圍,則螢光體陶瓷層20a所放出的總螢光量增加,故可提供放射的光量更多之波長轉換元件1a及投影機。另,理論密度,為具有石榴石構造之第1結晶相的理論密度。 The density of the fluorescent ceramic layer 20a is preferably 95% to 100% of the theoretical density, and more preferably 97% to 100% of the theoretical density. Here, the theoretical density is the density when the atoms in the layer are ideally arranged. In other words, the theoretical density is the density when there are no voids in the fluorescent ceramic layer 20a, and is a value calculated using the crystal structure. For example, when the density of the fluorescent ceramic layer 20a is 99%, the remaining 1% is equivalent to the voids. That is, the higher the density of the fluorescent ceramic layer 20a, the fewer the voids. If the density of the fluorescent ceramic layer 20a is within the above range, the total amount of fluorescence emitted by the fluorescent ceramic layer 20a increases, so a wavelength conversion element 1a and a projector with a larger amount of radiated light can be provided. In addition, the theoretical density is the theoretical density of the first crystal phase with garnet structure.

螢光體陶瓷層20a的密度,宜為4.32g/cm3以上4.55g/cm3以下,更宜為4.41g/cm3以上4.55g/cm3以下。如本變形例所示,以YAG及YAP構成螢光體陶瓷層20a的情況,若螢光體陶瓷層20a的密度為上述範圍,則螢光體陶瓷層20a的密度分別成為理論密度之95%以上100%以下及97%以上100%以下。藉由使螢光體陶瓷層20a的密度為上述範圍,可將螢光體陶瓷層20a吸收的激發光L1效率良好地轉換為螢光。亦即,實現發光效率高之螢光體陶瓷層20a。 The density of the fluorescent ceramic layer 20a is preferably 4.32 g/cm 3 or more and 4.55 g/cm 3 or less, and more preferably 4.41 g/cm 3 or more and 4.55 g/cm 3 or less. As shown in this modification, when the fluorescent ceramic layer 20a is composed of YAG and YAP, if the density of the fluorescent ceramic layer 20a is within the above range, the density of the fluorescent ceramic layer 20a is 95% or more and 100% or more and 97% or more and 100% or less of the theoretical density, respectively. By making the density of the fluorescent ceramic layer 20a within the above range, the excitation light L1 absorbed by the fluorescent ceramic layer 20a can be efficiently converted into fluorescence. That is, a fluorescent ceramic layer 20a with high luminous efficiency is realized.

螢光體陶瓷層20a的膜厚(z軸方向之長度),宜為50μm以上而未滿150μm,更宜為50μm以上而未滿120μm。此外,該螢光體陶瓷層的膜厚,若為70μm以上而未滿120μm則更佳,為80μm以上而未滿110μm則進一步更佳。 The film thickness (length in the z-axis direction) of the fluorescent ceramic layer 20a is preferably 50 μm or more and less than 150 μm, and more preferably 50 μm or more and less than 120 μm. In addition, the film thickness of the fluorescent ceramic layer is preferably 70 μm or more and less than 120 μm, and even more preferably 80 μm or more and less than 110 μm.

[投影機的構成] [Projector structure]

如同上述地構成之波長轉換元件1a,與實施形態之波長轉換元件1同樣地,使用在投影機。亦即,亦可取代實施形態之波長轉換元件1,使用本變形例之波長轉換元件1a。 The wavelength conversion element 1a constructed as described above is used in a projector in the same manner as the wavelength conversion element 1 of the embodiment. That is, the wavelength conversion element 1a of this variant can be used instead of the wavelength conversion element 1 of the embodiment.

[實施例] [Implementation example]

此處,於實施例5及6之波長轉換元件中,針對製造方法與光利用效率予以說明。另,實施例5之波長轉換元件具備與本變形例之波長轉換元件1a相同的構成,實施例6之波長轉換元件具備與實施形態之波長轉換元件1相同的構成。 Here, in the wavelength conversion elements of Examples 5 and 6, the manufacturing method and light utilization efficiency are described. In addition, the wavelength conversion element of Example 5 has the same structure as the wavelength conversion element 1a of this variant, and the wavelength conversion element of Example 6 has the same structure as the wavelength conversion element 1 of the embodiment.

首先,針對實施例5及6之波長轉換元件所具備的螢光體陶瓷層之製造方法予以記述。 First, the manufacturing method of the fluorescent ceramic layer of the wavelength conversion element of Examples 5 and 6 is described.

實施例5之螢光體陶瓷層,主要由以(Y0.997Ce0.003)3Al5O12表示之結晶相(即第1結晶相)構成。另,如同上述,實施例5之螢光體陶瓷層,亦包含第2結晶相。實施例6之螢光體陶瓷層,由以(Y0.997Ce0.003)3Al5O12表示之結晶相(即第1結晶相)構成。此外,實施例5及6之螢光體陶瓷層,皆以Ce3+賦活螢光體構成。 The fluorescent ceramic layer of Example 5 is mainly composed of a crystalline phase represented by (Y 0.997 Ce 0.003 ) 3 Al 5 O 12 (i.e., the first crystalline phase). In addition, as described above, the fluorescent ceramic layer of Example 5 also includes a second crystalline phase. The fluorescent ceramic layer of Example 6 is composed of a crystalline phase represented by (Y 0.997 Ce 0.003 ) 3 Al 5 O 12 (i.e., the first crystalline phase). In addition, the fluorescent ceramic layers of Examples 5 and 6 are both composed of Ce 3+ activated phosphors.

實施例5及6之螢光體陶瓷層,使用與在實施例1~3使用的原料相同的原料。 The fluorescent ceramic layers of Examples 5 and 6 use the same raw materials as those used in Examples 1 to 3.

首先,秤量上述原料,使其成為化學計量組成之化合物(Y0.997Ce0.003)3Al5O12。而後,以與實施例1~3相同之順序將上述原料混合,獲得漿狀的混合原料。 First, the above raw materials are weighed to form a compound of a stoichiometric composition of (Y 0.997 Ce 0.003 ) 3 Al 5 O 12 . Then, the above raw materials are mixed in the same order as in Examples 1 to 3 to obtain a slurry-like mixed raw material.

而後,在實施例5,藉由未利用噴霧乾燥裝置之方法,獲得造成粒的混合原料。具體而言,將利用乾燥機乾燥之混合原料100g,投入至氧化鋁製的研缽。而後,將使聚乙烯醇以0.5wt%的比率水溶之溶液作為聚乙烯醇溶液,將此聚乙烯醇溶液18mL進一步投入至氧化鋁製的研缽。其後,利用磨杵,將混合原料與聚乙烯醇溶液混合。而後,將混合原料與聚乙烯醇溶液的混合物,利用開孔512μm的篩網過濾。其結果,獲得粒子尺寸成為512μm程度以下之混合原料與聚乙烯醇 溶液的混合物。其後,將該混合物,以設定為105℃之乾燥機處理30分鐘,將水分去除。如此地,獲得在實施例5使用之造成粒的混合原料。此外,在實施例6,以與實施例1~3相同之順序將混合原料造粒,獲得造成粒的混合原料。 Then, in Example 5, a granulated mixed raw material is obtained by a method without using a spray drying device. Specifically, 100 g of the mixed raw material dried by a dryer is put into a mortar made of aluminum oxide. Then, a solution in which polyvinyl alcohol is dissolved in water at a ratio of 0.5 wt% is used as a polyvinyl alcohol solution, and 18 mL of this polyvinyl alcohol solution is further put into a mortar made of aluminum oxide. Then, the mixed raw material and the polyvinyl alcohol solution are mixed using a pestle. Then, the mixture of the mixed raw material and the polyvinyl alcohol solution is filtered using a sieve with an opening of 512 μm. As a result, a mixture of the mixed raw material and the polyvinyl alcohol solution having a particle size of less than 512 μm is obtained. Then, the mixture is treated in a dryer set at 105°C for 30 minutes to remove moisture. In this way, the mixed raw material for granulation used in Example 5 is obtained. In addition, in Example 6, the mixed raw material is granulated in the same order as in Examples 1 to 3 to obtain a mixed raw material for granulation.

實施例5及6之螢光體陶瓷層,以相同方法暫時成型。具體而言,將造成粒的混合原料,利用電動油壓加壓機(理研精機株式會社製,EMP-5)與圓筒型之模具(外徑66mm、內徑46mm、高度130mm),暫時成型為圓筒型。使成型時的壓力為5MPa。而後,利用冷均壓加壓裝置,使暫時成型後之成型體正式成型。使正式成型時的壓力為300MPa。另,將正式成型後之成型體,以去除造粒時使用的黏著劑(黏結劑)為目的,施行加熱處理(去黏結劑處理)。使加熱處理的溫度為500℃。此外,使加熱處理的時間為10小時。 The fluorescent ceramic layers of Examples 5 and 6 are temporarily molded in the same way. Specifically, the mixed raw materials to be granulated are temporarily molded into a cylindrical shape using an electric hydraulic press (EMP-5, manufactured by Riken Seiki Co., Ltd.) and a cylindrical mold (outer diameter 66 mm, inner diameter 46 mm, height 130 mm). The pressure during molding is set to 5 MPa. Then, the temporarily molded body is formally molded using a cold isostatic pressurizing device. The pressure during formal molding is set to 300 MPa. In addition, the formally molded body is subjected to a heat treatment (de-binder treatment) for the purpose of removing the adhesive (binder) used during granulation. The temperature of the heat treatment is set to 500°C. In addition, the heat treatment time was set to 10 hours.

利用管狀氣體環境爐,鍛燒加熱處理後之成型體。使鍛燒溫度為1675℃。此外,使鍛燒時間為4小時。使鍛燒氣體環境,為氮與氫的混合氣體環境。另,鍛燒後之鍛燒物的外徑及內徑,分別為49mm及35mm。 The molded body after heat treatment is forged in a tubular gas environment furnace. The forging temperature is 1675℃. In addition, the forging time is 4 hours. The forging gas environment is a mixed gas environment of nitrogen and hydrogen. In addition, the outer diameter and inner diameter of the forged product after forging are 49mm and 35mm respectively.

利用多線鋸,將鍛燒後的圓筒型之鍛燒物切片。切成片的圓筒型之鍛燒物的厚度,約為700μm。 Use a multi-wire saw to slice the cylindrical forged material after forging. The thickness of the sliced cylindrical forged material is about 700μm.

另,在實施例5及6,將鍛燒後之鍛燒物,以1000℃以上的溫度予以加熱處理。 In addition, in Examples 5 and 6, the sintered product is heated at a temperature above 1000°C.

利用研磨裝置,研磨切片後之鍛燒物,施行鍛燒物的厚度之調整。螢光體陶瓷層的厚度,在實施例5為118μm,在實施例6為117μm。 The forged product after slicing is ground by a grinding device to adjust the thickness of the forged product. The thickness of the fluorescent ceramic layer is 118μm in Example 5 and 117μm in Example 6.

另,實施例5及6之螢光體陶瓷層的外徑及內徑,皆為49mm及35mm。此外,實施例5及6之螢光體陶瓷層,為深黃色。 In addition, the outer diameter and inner diameter of the fluorescent ceramic layer of Examples 5 and 6 are both 49 mm and 35 mm. In addition, the fluorescent ceramic layer of Examples 5 and 6 is dark yellow.

接著,針對螢光體陶瓷層之評價予以說明。 Next, the evaluation of the fluorescent ceramic layer is explained.

首先,利用阿基米德法,評價實施例5及6之螢光體陶瓷層的密度。實施例5及6之螢光體陶瓷層的密度,分別為4.48g/cm3及4.42g/cm3。此外,實施例5及6之螢光體陶瓷層的密度,分別為Y3Al5O12的理論密度(4.55g/cm3)之98.4%及97.1%。亦即,實施例5及6之螢光體陶瓷層的密度,為Y3Al5O12的理論密度之97%以上100%以下。 First, the density of the fluorescent ceramic layer of Examples 5 and 6 was evaluated by the Archimedean method. The density of the fluorescent ceramic layer of Examples 5 and 6 was 4.48 g/cm 3 and 4.42 g/cm 3 , respectively. In addition, the density of the fluorescent ceramic layer of Examples 5 and 6 was 98.4% and 97.1% of the theoretical density (4.55 g/cm 3) of Y 3 Al 5 O 12 , respectively. That is, the density of the fluorescent ceramic layer of Examples 5 and 6 was 97% or more and 100% or less of the theoretical density of Y 3 Al 5 O 12 .

而後,利用掃描式電子顯微鏡(SEM),評價實施例5之螢光體陶瓷層的剖面SEM影像。 Then, a scanning electron microscope (SEM) was used to evaluate the cross-sectional SEM image of the fluorescent ceramic layer of Example 5.

圖10係顯示本變形例的實施例5之螢光體陶瓷層的剖面之SEM影像。圖10(a)係顯示實施例5之螢光體陶瓷層的廣範圍之剖面的SEM影像。另,圖10(a)所示之SEM影像,相當於在圖9所示之剖面圖以虛線矩形包圍的區域之影像。圖10(b),係將圖10(a)的以一點鏈線之矩形包圍的區域放大之SEM影像。圖10(c),係將圖10(a)的以二點鏈線之矩形包圍的區域放大之SEM影像。 FIG10 shows a cross-sectional SEM image of the fluorescent ceramic layer of Example 5 of this variant. FIG10(a) shows a wide-range cross-sectional SEM image of the fluorescent ceramic layer of Example 5. In addition, the SEM image shown in FIG10(a) is equivalent to the image of the area surrounded by the dotted rectangle in the cross-sectional view shown in FIG9. FIG10(b) is an enlarged SEM image of the area surrounded by the one-point chain rectangle of FIG10(a). FIG10(c) is an enlarged SEM image of the area surrounded by the two-point chain rectangle of FIG10(a).

此處,實施例5之螢光體陶瓷層,即本變形例之螢光體陶瓷層20a,包含單相部、及與該單相部區別之混合相部。於圖10(b)顯示單相部,於圖10(c)顯示混合相部。 Here, the fluorescent ceramic layer of Example 5, that is, the fluorescent ceramic layer 20a of this variant, includes a single phase portion and a mixed phase portion different from the single phase portion. The single phase portion is shown in FIG10(b), and the mixed phase portion is shown in FIG10(c).

本變形例中,在圖10之SEM影像中,顏色較深之區域相當於具有石榴石構造之第1結晶相,顏色較淺之區域相當於具有鈣鈦礦構造之第2結晶相。此外,在圖10之SEM影像中,顏色最深之區域相當於空隙。 In this variation, in the SEM image of FIG10 , the darker region corresponds to the first crystal phase having a garnet structure, and the lighter region corresponds to the second crystal phase having a calcite structure. In addition, in the SEM image of FIG10 , the darkest region corresponds to the void.

於單相部,僅設置「具有石榴石構造之第1結晶相、及具有與石榴石構造不同的構造(此處為鈣鈦礦構造)之第2結晶相」之中的第1結晶相。另,更具體而言,此處,於單相部,僅設置第1結晶相,未設置具有與石榴石構造及鈣鈦礦構造不同的構造之其他結晶相等。 In the single phase portion, only the first crystal phase is provided among "the first crystal phase having a garnet structure and the second crystal phase having a structure different from the garnet structure (here, the calcite structure)". In addition, more specifically, here, in the single phase portion, only the first crystal phase is provided, and no other crystal phases having a structure different from the garnet structure and the calcite structure are provided.

此外,於混合相部,混合設置第1結晶相及第2結晶相兩者。更具體而言,於混合相部,僅混合設置第1結晶相及第2結晶相兩者。另,亦可於混合相部,混合設置第1結晶相及第2結晶相兩者、進一步設置具有與石榴石構造及鈣鈦礦構造不同的構造之其他結晶相。 In addition, the first crystal phase and the second crystal phase are mixed and arranged in the mixed phase portion. More specifically, only the first crystal phase and the second crystal phase are mixed and arranged in the mixed phase portion. In addition, the first crystal phase and the second crystal phase may be mixed and arranged in the mixed phase portion, and other crystal phases having a structure different from the garnet structure and the calcite structure may be further arranged.

實施例5之混合相部,以將第1結晶相及第2結晶相兩者隨機交雜的構造混合設置,但未限定於此一形態,以第1結晶相及第2結晶相兩者周期性地配置的構造混合設置亦可。 The mixed phase part of Example 5 is a mixed configuration in which the first crystalline phase and the second crystalline phase are randomly intermixed, but it is not limited to this form. A mixed configuration in which the first crystalline phase and the second crystalline phase are periodically arranged is also possible.

另,實施例5之螢光體陶瓷層,包含複數混合相部。在圖10(a)以點線包圍的區域,分別相當於混合相部。 In addition, the fluorescent ceramic layer of Example 5 includes multiple mixed phase parts. The areas surrounded by dotted lines in Figure 10(a) correspond to the mixed phase parts respectively.

複數混合相部之周圍,分別由單相部包圍。單相部及複數混合相部的形狀,亦可說是海島狀。此一情況,單相部相當於海,複數混合相部相當於島。 The multiple mixed phases are surrounded by single phases. The shapes of the single phase and multiple mixed phases can also be described as islands. In this case, the single phase is equivalent to the sea, and the multiple mixed phases are equivalent to the island.

此外,於混合相部,相較於第1結晶相,宜設置更多之第2結晶相。例如,混合相部中之第1結晶相與第2結晶相的比率,如同下述。將實施例5之螢光體陶瓷層予以剖面觀察的情況(例如,圖10),使顯示混合相部之影像的面積全體為100%時,顯示第2結晶相的面積,例如為10%以上99%以下。另,顯示第2結晶相的面積不限於此,例如可為70%以上95%以下,亦可為80%以上90%以下。亦即,於本變形例之混合相部,主要設置第2結晶相。 In addition, in the mixed phase part, it is appropriate to set more second crystalline phases than the first crystalline phase. For example, the ratio of the first crystalline phase to the second crystalline phase in the mixed phase part is as follows. When the fluorescent ceramic layer of Example 5 is observed in cross section (for example, Figure 10), when the area showing the image of the mixed phase part is 100%, the area showing the second crystalline phase is, for example, 10% to 99%. In addition, the area showing the second crystalline phase is not limited to this, for example, it can be 70% to 95%, or 80% to 90%. That is, in the mixed phase part of this variant, the second crystalline phase is mainly set.

如此地,於混合相部,混合設置具有石榴石構造之第1結晶相及具有鈣鈦礦構造之第2結晶相兩者。如同上述,第1結晶相之折射率,與第2結晶相之折射率彼此不同。因此,僅設置第1結晶相的單相部之折射率,與混合相部之折射率彼此不同。本變形例中,YAG之折射率為1.83,YAP之折射率為1.91,故單相部之折射率較混合相部之折射率更低。 In this way, the first crystal phase having a garnet structure and the second crystal phase having a calcite structure are mixed in the mixed phase. As described above, the refractive index of the first crystal phase is different from the refractive index of the second crystal phase. Therefore, the refractive index of the single phase portion of the first crystal phase is different from the refractive index of the mixed phase portion. In this variant, the refractive index of YAG is 1.83 and the refractive index of YAP is 1.91, so the refractive index of the single phase portion is lower than that of the mixed phase portion.

進一步,針對混合相部之尺寸予以說明。另,混合相部之尺寸,表示圖10所示之SEM影像的混合相部之長邊方向之長度。混合相部之尺寸,例如為以圖10的雙箭頭表示之長度。混合相部之尺寸,宜為0.5μm以上而未滿500μm,更宜為1μm以上而未滿300μm,進一步宜為2μm以上而未滿100μm。 Furthermore, the size of the mixed phase portion is explained. In addition, the size of the mixed phase portion indicates the length of the long side direction of the mixed phase portion of the SEM image shown in FIG10. The size of the mixed phase portion is, for example, the length indicated by the double arrow in FIG10. The size of the mixed phase portion is preferably 0.5 μm or more and less than 500 μm, more preferably 1 μm or more and less than 300 μm, and further preferably 2 μm or more and less than 100 μm.

如此地,實施例5之螢光體陶瓷層(螢光體陶瓷層20a),包含第1結晶相及第2結晶相,在圖10顯示設置單相部及混合相部。另一方面,實施例6之螢光體陶瓷層,僅由第1結晶相構成。因此,確認實施例6之螢光體陶瓷層,並未設置混合相部。 Thus, the fluorescent ceramic layer (fluorescent ceramic layer 20a) of Example 5 includes the first crystalline phase and the second crystalline phase, and FIG. 10 shows that a single phase portion and a mixed phase portion are provided. On the other hand, the fluorescent ceramic layer of Example 6 is composed only of the first crystalline phase. Therefore, it is confirmed that the fluorescent ceramic layer of Example 6 does not have a mixed phase portion.

接著,針對實施例5及6之波長轉換元件的製造方法予以記述。 Next, the manufacturing method of the wavelength conversion element of Examples 5 and 6 is described.

首先,作為光反射層,準備塗Ag的Al之圓盤狀的基板本體(直徑50mm、厚度0.5mm)。另,於此基板本體之中心部,開設螺孔。接著,於此基板本體,設置螢光體陶瓷層。 First, prepare a disc-shaped substrate body (diameter 50mm, thickness 0.5mm) coated with Ag on Al as a light-reflecting layer. Also, open a screw hole in the center of this substrate body. Then, set a fluorescent ceramic layer on this substrate body.

於螢光體陶瓷層的內側,設置中心部開設有螺孔的Al之圓盤狀的第3板構件(外徑34.5mm、厚度100μm)。另,螢光體陶瓷層為螢光環;第3板構件,設置於環狀的內側。而後,進一步,以與螢光體陶瓷層及第3板構件重疊的方式,設置中心部開設有螺孔的Al之圓盤狀的第4板構件(外徑39mm、厚度200μm)。而後,將基板本體、第3板構件及第4板構件予以螺著固定。如此地,固定螢光體陶瓷層,獲得波長轉換元件。亦即,實施例5及6之波長轉換元件中,螢光體陶瓷層,係藉由基板本體與第4板構件而包夾固定。 On the inner side of the fluorescent ceramic layer, a third plate member (outer diameter 34.5 mm, thickness 100 μm) of Al with a screw hole in the center is set. In addition, the fluorescent ceramic layer is a fluorescent ring; the third plate member is set on the inner side of the ring. Then, a fourth plate member (outer diameter 39 mm, thickness 200 μm) of Al with a screw hole in the center is set in a manner overlapping with the fluorescent ceramic layer and the third plate member. Then, the substrate body, the third plate member and the fourth plate member are screwed and fixed. In this way, the fluorescent ceramic layer is fixed to obtain a wavelength conversion element. That is, in the wavelength conversion element of Examples 5 and 6, the fluorescent ceramic layer is sandwiched and fixed by the substrate body and the fourth plate component.

進一步,針對波長轉換元件的評價予以說明。 Furthermore, the evaluation of wavelength conversion components is explained.

將實施例5及6之波長轉換元件,以與實施例1~3相同的方法評價。 The wavelength conversion elements of Examples 5 and 6 were evaluated in the same manner as Examples 1 to 3.

圖11係顯示本變形例的實施例5及6之波長轉換元件的評價結果之圖。具體而言,於圖11,顯示實施例5及6之波長轉換元件的螢光能量相對值(通過開口部後)、螢光能量相對值(通過開口部前)及結合效率。 FIG11 is a diagram showing the evaluation results of the wavelength conversion elements of Examples 5 and 6 of this variation. Specifically, FIG11 shows the relative value of the fluorescence energy (after passing through the opening), the relative value of the fluorescence energy (before passing through the opening), and the combination efficiency of the wavelength conversion elements of Examples 5 and 6.

此處,螢光能量相對值(通過開口部後),係通過孔隙構件的開口部後之各個波長轉換元件放出的螢光之螢光能量的相對值。另,使通過開口部後的實施例6之波長轉換元件放出的螢光之螢光能量為100%。 Here, the relative value of the fluorescence energy (after passing through the opening) is the relative value of the fluorescence energy of the fluorescence emitted by each wavelength conversion element after passing through the opening of the aperture member. In addition, the fluorescence energy of the fluorescence emitted by the wavelength conversion element of Example 6 after passing through the opening is 100%.

此外,螢光能量相對值(通過開口部前),係通過孔隙構件的開口部前之各個波長轉換元件放出的螢光之螢光能量的相對值。另,使通過開口部後的實施例6之波長轉換元件放出的螢光之螢光能量為100%。 In addition, the relative value of the fluorescence energy (before passing through the opening) is the relative value of the fluorescence energy of the fluorescence emitted by each wavelength conversion element before passing through the opening of the aperture member. In addition, the fluorescence energy of the fluorescence emitted by the wavelength conversion element of Example 6 after passing through the opening is set to 100%.

此外,結合效率,係相對於螢光能量相對值(通過開口部前)之螢光能量相對值(通過開口部後)的比例。亦即,結合效率,係將螢光能量相對值(通過開口部後)除以螢光能量相對值(通過開口部前)的值。 In addition, the binding efficiency is the ratio of the relative value of the fluorescence energy (after passing through the opening) to the relative value of the fluorescence energy (before passing through the opening). In other words, the binding efficiency is the value obtained by dividing the relative value of the fluorescence energy (after passing through the opening) by the relative value of the fluorescence energy (before passing through the opening).

如圖11所示,實施例5及6之波長轉換元件的螢光能量相對值(通過開口部後),分別為101%及100%。進一步,實施例5及6之波長轉換元件的螢光能量相對值(通過開口部前),分別為117%及122%。 As shown in Figure 11, the relative values of the fluorescent energy of the wavelength conversion elements of Examples 5 and 6 (after passing through the opening) are 101% and 100%, respectively. Furthermore, the relative values of the fluorescent energy of the wavelength conversion elements of Examples 5 and 6 (before passing through the opening) are 117% and 122%, respectively.

此外,與本變形例之波長轉換元件1a相當的實施例5之波長轉換元件的結合效率,為87%。與實施形態之波長轉換元件1相當的實施例6之波長轉換元件的結合效率,為82%。 In addition, the wavelength conversion element of Example 5, which is equivalent to the wavelength conversion element 1a of this variant, has a combination efficiency of 87%. The wavelength conversion element of Example 6, which is equivalent to the wavelength conversion element 1 of the embodiment, has a combination efficiency of 82%.

如同上述,實施例5之波長轉換元件所具備的螢光體陶瓷層(螢光體陶瓷層20a),由折射率彼此不同之第1結晶相與第2結晶相構成。 As described above, the fluorescent ceramic layer (fluorescent ceramic layer 20a) of the wavelength conversion element of Example 5 is composed of a first crystalline phase and a second crystalline phase having different refractive indices.

藉此,於螢光體陶瓷層20a中產生折射率不同的區域,故激發光L1及螢光變得容易分散。其結果,實施形態之在圖5A及圖5B顯示的往層之平面方向(亦即,x軸方向或y軸方向)之導光受到抑制,螢光體陶瓷層20a的發光面積變得更小。因此,實施例5之波長轉換元件的結合效率,相較於實施例6之波長轉換元件的結合效率變得更高。亦即,實現光展量更小、光利用效率更高的實施例5之波長轉換元件(波長轉換元件1a)。在投影機具備此等波長轉換元件1a之情況,可更為提高投影機的光利用效率。 Thus, regions with different refractive indices are generated in the fluorescent ceramic layer 20a, so the excitation light L1 and the fluorescence become easier to disperse. As a result, the light guide in the plane direction (i.e., the x-axis direction or the y-axis direction) of the implementation form shown in Figures 5A and 5B is suppressed, and the light-emitting area of the fluorescent ceramic layer 20a becomes smaller. Therefore, the combination efficiency of the wavelength conversion element of Example 5 becomes higher than that of the wavelength conversion element of Example 6. That is, the wavelength conversion element (wavelength conversion element 1a) of Example 5 with smaller light spread and higher light utilization efficiency is realized. When the projector is equipped with such a wavelength conversion element 1a, the light utilization efficiency of the projector can be further improved.

此外,螢光體陶瓷層20a,包含單相部、及與該單相部區別之混合相部。於單相部,僅設置第1結晶相及第2結晶相中之第1結晶相;於混合相部,混合設置第1結晶相及第2結晶相兩者。此等單相部之折射率及混合相部之折射率,彼此不同。 In addition, the fluorescent ceramic layer 20a includes a single phase portion and a mixed phase portion different from the single phase portion. In the single phase portion, only the first crystalline phase of the first crystalline phase and the second crystalline phase is provided; in the mixed phase portion, the first crystalline phase and the second crystalline phase are mixed and provided. The refractive index of these single phase portions and the refractive index of the mixed phase portion are different from each other.

藉此,於螢光體陶瓷層20a中產生折射率不同的區域,故激發光L1及螢光變得更容易分散。其結果,螢光體陶瓷層20a的發光面積變得更小。因此,可實現光展量更小、光利用效率更高之波長轉換元件1a。 Thus, regions with different refractive indices are generated in the fluorescent ceramic layer 20a, so the excitation light L1 and the fluorescence become easier to disperse. As a result, the luminous area of the fluorescent ceramic layer 20a becomes smaller. Therefore, a wavelength conversion element 1a with smaller light spread and higher light utilization efficiency can be realized.

此外,混合相部之尺寸為上述範圍的情況,激發光L1及螢光變得更容易分散。 In addition, when the size of the mixed phase is within the above range, the excitation light L1 and the fluorescence become easier to disperse.

此外,螢光體陶瓷層20a,包含複數混合相部。複數混合相部各自之周圍,受到單相部包圍。 In addition, the fluorescent ceramic layer 20a includes a plurality of mixed phase parts. Each of the plurality of mixed phase parts is surrounded by a single phase part.

藉此,激發光L1及螢光變得更容易分散。其結果,螢光體陶瓷層20a的發光面積變得更小。因此,實現光展量更小、光利用效率更高之波長轉換元件1a。 As a result, the excitation light L1 and the fluorescence become easier to disperse. As a result, the light-emitting area of the fluorescent ceramic layer 20a becomes smaller. Therefore, a wavelength conversion element 1a with smaller light spread and higher light utilization efficiency is realized.

上述結果顯示:不僅藉由螢光體陶瓷層20a的膜厚薄所產生的導光抑制效果,亦藉由螢光體陶瓷層20a自身的導光抑制效果,提高波長轉換元件1a的結合效率。亦即,顯示:即便未控制螢光體陶瓷層20a的膜厚,仍提高波長轉換元件1a的結合效率。 The above results show that the light guide suppression effect produced by the thin film thickness of the fluorescent ceramic layer 20a is not only used to improve the wavelength conversion element 1a's binding efficiency, but also the light guide suppression effect of the fluorescent ceramic layer 20a itself. In other words, it is shown that even if the film thickness of the fluorescent ceramic layer 20a is not controlled, the wavelength conversion element 1a's binding efficiency is still improved.

此外,表示第2結晶相的材料之折射率,與表示第1結晶相的材料之折射率的差,為0.05以上0.5以下。 In addition, the difference between the refractive index of the material representing the second crystal phase and the refractive index of the material representing the first crystal phase is greater than or equal to 0.05 and less than or equal to 0.5.

藉此,激發光L1及螢光變得更容易分散。其結果,螢光體陶瓷層20a的發光面積變得更小。因此,實現光展量更小、光利用效率更高之波長轉換元件1a。 As a result, the excitation light L1 and the fluorescence become easier to disperse. As a result, the light-emitting area of the fluorescent ceramic layer 20a becomes smaller. Therefore, a wavelength conversion element 1a with smaller light spread and higher light utilization efficiency is realized.

此外,第2結晶相,係以(Y1-yCey)AlO3(0≦y<0.1)表示之結晶相。 In addition, the second crystalline phase is a crystalline phase represented by (Y 1-y Ce y )AlO 3 (0≦y<0.1).

藉此,容易使表示第2結晶相的材料之折射率,與表示第1結晶相的材料之折射率的差為上述範圍。 This makes it easy to make the difference between the refractive index of the material representing the second crystal phase and the refractive index of the material representing the first crystal phase within the above range.

(變形例2) (Variant 2)

進一步,針對構成與螢光體陶瓷層20及20a不同之螢光體陶瓷層20b予以說明。 Furthermore, the fluorescent ceramic layer 20b having a structure different from the fluorescent ceramic layers 20 and 20a is described.

圖12係本變形例之螢光體陶瓷構件的立體圖。 Figure 12 is a three-dimensional diagram of the fluorescent ceramic component of this variant.

本變形例之螢光體陶瓷構件,作為一例,為具有層狀之形狀的螢光體陶瓷層20b。 The fluorescent ceramic component of this variation is, for example, a fluorescent ceramic layer 20b having a layered shape.

螢光體陶瓷層20b,與實施形態及變形例1所示之螢光體陶瓷層20及20a同樣地,為使用在投影機之構件。 The fluorescent ceramic layer 20b, like the fluorescent ceramic layers 20 and 20a shown in the embodiment and variation 1, is a component used in a projector.

螢光體陶瓷層20b,除了下述一點以外,具備與變形例1之螢光體陶瓷層20a同樣的構成。具體而言,該一點,係使Ce3+存在比為60%以上。 The fluorescent ceramic layer 20b has the same structure as the fluorescent ceramic layer 20a of Modification 1 except for the following point. Specifically, the Ce 3+ abundance ratio is set to 60% or more.

亦即,螢光體陶瓷層20b,包含具有石榴石構造之第1結晶相、及具有石榴石構造以外的構造之第2結晶相。第1結晶相與第2結晶相,折射率彼此不同。另,本變形例中,第1結晶相及第2結晶相分別為以YAG及YAP表示之結晶相;螢光體陶瓷層20b,亦主要包含第1結晶相。此外,螢光體陶瓷構件(螢光體陶瓷層20b)的密度,宜為理論密度之95%以上100%以下,更宜為理論密度之97%以上100%以下。此外,螢光體陶瓷構件(螢光體陶瓷層20b)的膜厚宜未特別限制,但在設置限制之情況,宜為50μm以上而未滿500μm,更宜為50μm以上而未滿300μm。此外,該膜厚進一步宜為50μm以上而未滿120μm。 That is, the fluorescent ceramic layer 20b includes a first crystalline phase having a garnet structure and a second crystalline phase having a structure other than the garnet structure. The first crystalline phase and the second crystalline phase have different refractive indices. In addition, in this variation, the first crystalline phase and the second crystalline phase are crystalline phases represented by YAG and YAP, respectively; the fluorescent ceramic layer 20b also mainly includes the first crystalline phase. In addition, the density of the fluorescent ceramic component (fluorescent ceramic layer 20b) is preferably not less than 95% and not more than 100% of the theoretical density, and more preferably not less than 97% and not more than 100% of the theoretical density. In addition, the film thickness of the fluorescent ceramic component (fluorescent ceramic layer 20b) is preferably not particularly limited, but in the case of setting restrictions, it is preferably 50μm or more and less than 500μm, and more preferably 50μm or more and less than 300μm. In addition, the film thickness is further preferably 50μm or more and less than 120μm.

螢光體陶瓷構件(螢光體陶瓷層20b)具備上述構成。因此,將螢光體陶瓷層20b使用在投影機,照射激發光之情況,於螢光體陶瓷層20b中產生折射率不同的區域,故激發光及螢光更為分散。其結果,實施形態之在圖5A及圖5B顯示的往層之平面方向(亦即,x軸方向或y軸方向)的導光受到抑制,螢光體陶瓷層20b的發光面積變得更小。因此,成為光展量更小、光利用效率更高之螢光體 陶瓷構件。使投影機具備此等螢光體陶瓷構件(螢光體陶瓷層20b)之情況,可更為提高投影機的光利用效率。 The fluorescent ceramic component (fluorescent ceramic layer 20b) has the above-mentioned structure. Therefore, when the fluorescent ceramic layer 20b is used in a projector and irradiated with excitation light, regions with different refractive indices are generated in the fluorescent ceramic layer 20b, so the excitation light and the fluorescent light are more dispersed. As a result, the light guide in the plane direction of the layer shown in Figures 5A and 5B (that is, the x-axis direction or the y-axis direction) is suppressed, and the light-emitting area of the fluorescent ceramic layer 20b becomes smaller. Therefore, it becomes a fluorescent ceramic component with smaller light spread and higher light utilization efficiency. When the projector is equipped with such a fluorescent ceramic component (fluorescent ceramic layer 20b), the light utilization efficiency of the projector can be further improved.

進一步,螢光體陶瓷層20b,由具有Ce3+及Ce4+的YAG及YAP構成,亦即,螢光體陶瓷層20b,包含Ce3+及Ce4+。此處,螢光體陶瓷層20b中,滿足Ce3+×100%/(Ce3++Ce4+)≧60%,亦即,Ce3+存在比,為60%以上。 Furthermore, the fluorescent ceramic layer 20b is composed of YAG and YAP having Ce 3+ and Ce 4+ , that is, the fluorescent ceramic layer 20b contains Ce 3+ and Ce 4+ . Here, in the fluorescent ceramic layer 20b, Ce 3+ ×100%/(Ce 3+ +Ce 4+ )≧60% is satisfied, that is, the Ce 3+ existence ratio is more than 60%.

Ce3+存在比為60%以上之螢光體陶瓷層20b,由於Ce4+所造成的非發光緩和損耗減少,故發光效率變高。進一步,在具備此等螢光體陶瓷層20b之投影機中,可提高光利用效率。例如,可實現消耗電力低之投影機。 The fluorescent ceramic layer 20b with a Ce 3+ existence ratio of 60% or more has a higher luminous efficiency because the non-luminescent slowdown loss caused by Ce 4+ is reduced. Furthermore, in a projector having such a fluorescent ceramic layer 20b, the light utilization efficiency can be improved. For example, a projector with low power consumption can be realized.

此外,由於Ce4+所造成的非發光緩和損耗減少,故螢光體陶瓷層20b的發熱減少。因此,在具備此等螢光體陶瓷層20b之投影機中,可提高激發光之最大輸入能量,亦即,可實現高輸出之投影機。 In addition, since the non-luminescent slowdown loss caused by Ce 4+ is reduced, the heat generation of the fluorescent ceramic layer 20b is reduced. Therefore, in a projector having such a fluorescent ceramic layer 20b, the maximum input energy of the excitation light can be increased, that is, a high-output projector can be realized.

(其他實施形態) (Other implementation forms)

以上,針對本發明之波長轉換元件等,依據實施形態及變形例予以說明,但本發明並未限定於此等實施形態及變形例。若未脫離本發明之主旨,則對實施形態及變形例施以所屬技術領域中具有通常知識者所思及之各種變形者、或將實施形態及變形例中之一部分的構成要素予以組合構築之其他形態,皆包含於本發明的範圍。 The wavelength conversion element of the present invention is described above based on the embodiments and variants, but the present invention is not limited to these embodiments and variants. If it does not deviate from the main purpose of the present invention, the embodiments and variants are subjected to various modifications that can be thought of by people with ordinary knowledge in the relevant technical field, or other forms of combining and constructing some of the constituent elements of the embodiments and variants are all included in the scope of the present invention.

另,實施形態中,光源為半導體雷射光源,但未限定於此一形態,亦可為LED光源。 In addition, in the implementation form, the light source is a semiconductor laser light source, but it is not limited to this form and can also be an LED light source.

此外,上述實施形態,可於發明申請專利範圍或其均等範圍中進行各種變更、置換、附加、省略等。 In addition, the above-mentioned implementation forms may be subject to various changes, substitutions, additions, omissions, etc. within the scope of the invention patent application or its equivalent scope.

1:波長轉換元件 1: Wavelength conversion element

10:基板 10: Substrate

11:基板本體 11: Substrate body

12:光反射層 12: Light reflection layer

13:光反射面 13: Light reflecting surface

20:螢光體陶瓷層 20: Fluorescent ceramic layer

30:防止反射層 30: Anti-reflection layer

121:光散射性粒子 121: Light scattering particles

122:黏結劑 122: Adhesive

L1:激發光 L1: Excitation light

Claims (6)

一種螢光體陶瓷構件,使用在投影機,其包含:第1結晶相,具有石榴石構造;該螢光體陶瓷構件的密度為理論密度之97%以上100%以下;該螢光體陶瓷構件,係僅由該第1結晶相構成,或僅由該第1結晶相、及具有石榴石構造以外的構造之第2結晶相構成;該螢光體陶瓷構件,包含Ce3+及Ce4+;滿足Ce3+×100%/(Ce3++Ce4+)≧60%。 A fluorescent ceramic component is used in a projector, comprising: a first crystalline phase having a garnet structure; the density of the fluorescent ceramic component is greater than 97% and less than 100% of the theoretical density; the fluorescent ceramic component is composed only of the first crystalline phase, or only of the first crystalline phase and a second crystalline phase having a structure other than the garnet structure; the fluorescent ceramic component contains Ce 3+ and Ce 4+ ; and satisfies Ce 3+ ×100%/(Ce 3+ +Ce 4+ )≧60%. 如請求項1之螢光體陶瓷構件,其中,表示該第2結晶相的材料之折射率,與表示該第1結晶相的材料之折射率的差,為0.05以上0.5以下。 A fluorescent ceramic component as claimed in claim 1, wherein the difference between the refractive index of the material representing the second crystal phase and the refractive index of the material representing the first crystal phase is greater than 0.05 and less than 0.5. 如請求項1之螢光體陶瓷構件,其中,該螢光體陶瓷構件,係由以(Y1-xCex)3Al5O12(0.001≦x<0.1)表示之該第1結晶相構成。 The fluorescent ceramic component of claim 1, wherein the fluorescent ceramic component is composed of the first crystalline phase represented by (Y 1-x Ce x ) 3 Al 5 O 12 (0.001≦x<0.1). 如請求項1之螢光體陶瓷構件,其中,該第2結晶相,係以(Y1-yCey)AlO3(0≦y<0.1)表示之結晶相。 The fluorescent ceramic component of claim 1, wherein the second crystalline phase is a crystalline phase represented by (Y 1-y Ce y )AlO 3 (0≦y<0.1). 如請求項1之螢光體陶瓷構件,其中,該螢光體陶瓷構件的密度為4.41g/cm3以上4.55g/cm3以下。 The fluorescent ceramic component of claim 1, wherein the density of the fluorescent ceramic component is greater than or equal to 4.41 g/cm 3 and less than or equal to 4.55 g/cm 3 . 如請求項1之螢光體陶瓷構件,其中,該螢光體陶瓷構件的膜厚為50μm以上而未滿300μm。 A fluorescent ceramic component as claimed in claim 1, wherein the film thickness of the fluorescent ceramic component is greater than 50 μm and less than 300 μm.
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