TWI845382B - Electrically conductive adsorption film and polishing head - Google Patents

Abstract

This invention discloses an electrically conductive adsorption film comprising: a flexible base which is deformable and is used for adsorbing objects; and one or more electrically conductive units which enable at least part of the electrically conductive adsorption film conductive. The invention further discloses a polishing head. The electrically conductive adsorption film, which is in contact with the wafer/substrate/base plate of the polishing head features good flexibility and electrical conductivity so as to realize electrically conductive polishing head, simplifying the circuit design of electrochemical polishing and planarization equipment; and the current on the wafer is led out through the electrically conductive adsorption film which is fitted with the wafer in size, so that the electrochemical reaction on the wafer is extremely uniform.

Description

Conductive adsorption film and polishing head

The invention belongs to the field of semiconductor integrated circuit chip manufacturing, and particularly relates to a conductive adsorption film and a polishing head.

The manufacturing process of wafer substrates and semiconductor devices includes processes such as polishing and surface planarization. Mechanical polishing, chemical mechanical polishing or planarization are usually used. The wafer carrier (polishing head) is used to pressurize the back of the wafer. The pressure, polishing head speed, polishing disc speed, polishing liquid flow rate and other parameters are controlled to polish or planarize the front surface or thin film surface of the wafer substrate on the polishing pad. Compared with mechanical polishing, chemical mechanical polishing and chemical mechanical polishing planarization can achieve higher polishing or planarization efficiency and better polishing or planarization effects, including higher flatness and lower defectivity, by adjusting the formula of the polishing liquid to produce chemical reactions on the wafer surface. Based on chemical mechanical polishing and planarization, electrochemical mechanical polishing and planarization can further utilize the conductive properties of the wafer substrate or the thin film on the wafer surface to form a current path, perform electrochemical reactions on the wafer substrate or the thin film surface, and increase the surface chemical reaction rate through precise control of the circuit system, thereby improving the efficiency of mechanical polishing and planarization.

In the manufacturing process of electrochemical mechanical polishing and planarization equipment, circuit architecture design is the key to electrochemical mechanical polishing and planarization equipment. The current circuit architecture is basically realized through different forms of current paths between wafers, polishing pads, chemical solutions, polishing platforms, electrodes, and power sources. The polishing heads in common implementations are all insulated types, and the polishing heads do not participate in the circuit architecture. The circuit architecture of current electrochemical mechanical polishing and planarization equipment is very complex. In addition, the wear of the electrodes will also increase the risks of wafer substrate scratches and metal contamination during the process. In addition, one of the electrodes of the current path in the current electrochemical mechanical planarization equipment is realized through the edge of the polishing platform. Therefore, there is uneven current size and distribution from the center to the edge of the polishing platform, which will lead to uneven electrochemical reactions on the wafer.

Based on the above shortcomings of the current electrochemical mechanical planarization equipment circuit path, it is possible to consider introducing a conductive polishing head to establish a current path between the conductive polishing head, wafer substrate, polishing pad, chemical solution, polishing platform, and power supply, thereby simplifying the circuit architecture and reducing the risk of particles and defects in the process.

During the manufacturing process, the polishing head carries out various tasks such as wafer loading and unloading, and pressurizing the chamber during the polishing process. In common implementations, the polishing head contacts the wafer through soft components, and completes tasks such as loading, unloading, and pressurizing the wafer through pressure. These soft component materials are often insulating films such as rubber/silicone. These insulating films cannot realize the output of the current on the wafer through the polishing head, and metals or other materials with good conductivity do not have the basic requirements of the softness and resilience of the insulating film. On the other hand, the electrochemical polishing process requires the current passing through the wafer and through the soft film to reach the ampere level. Therefore, the main difficulty limiting the application of conductive polishing heads is that the conductive flexible component in contact with the wafer must simultaneously have certain mechanical tensile properties, resilience, and excellent conductivity.

In order to overcome the shortcomings of the prior art, the present invention provides a conductive adsorption film that can be applied to the polishing head of electrochemical mechanical polishing and planarization equipment to realize a power circuit, simplify the installation of the second electrode, and avoid metal contamination, particle contamination and by-product deposition problems.

The technical solution adopted by the present invention to solve its technical problems is: a conductive adsorption film, which is characterized by comprising: a soft substrate that can be deformed and used to adsorb objects; one or more conductive units, so that at least part of the conductive adsorption film has conductivity.

Furthermore, it is partially conductive or the whole is conductive.

Furthermore, the resistances of the plurality of conductive units are the same or similar.

Furthermore, the conductive units are distributed at intervals on the outer surface of the soft substrate; or, the conductive units are continuously distributed on the outer surface of the soft substrate; or, the conductive units are at least partially located inside the soft substrate; or, a combination of two or three forms: the conductive units are distributed at intervals on the outer surface of the soft substrate, the conductive units are continuously distributed on the outer surface of the soft substrate, and the conductive units are at least partially located inside the soft substrate.

Furthermore, a plurality of conductive units can be connected to form a conductive surface.

Furthermore, during the processing of the soft matrix, a conductive material is mixed into the soft matrix to serve as a conductive unit; the conductive material is one or two or more.

Furthermore, a plurality of conductive units form a soft conductive component, and the soft conductive component is disposed on the surface of the soft substrate, or the soft conductive component is disposed inside the soft substrate and is at least partially exposed on the surface of the soft substrate.

Furthermore, the horizontal projection area of the soft conductive component accounts for 0.1-1 of the horizontal projection area of the conductive adsorption film.

Furthermore, the soft conductive component is a soft metal mesh, a carbon cloth, or a soft conductive foil; the number of the soft conductive components is one or two or more; the shape of the soft conductive component is circular, elliptical, polygonal, or star-shaped.

Furthermore, a plurality of conductive units form a metal sheet, the front side of the metal sheet is exposed to the surface of the soft substrate, and the back side is connected to a conductive connector; or, the metal sheet is set through the soft substrate; or, the metal sheet at least covers one side surface and/or the side wall in the thickness direction of the soft substrate.

Furthermore, the thickness of the metal sheet accounts for 0.8-1.0 of the thickness of the soft substrate; or, the thickness of the soft substrate accounts for 0.2-1.0 of the thickness of the metal sheet.

Furthermore, the horizontal projection area of the metal sheet accounts for 5-60% of the horizontal projection area of the soft matrix; or, the horizontal projection area of the soft matrix accounts for 5-60% of the horizontal projection area of the metal sheet.

Furthermore, the soft conductive component is a conductive coating electroplated on the surface of the soft substrate, or a conductive coating sprayed on the surface of the soft substrate.

Furthermore, the soft substrate is also provided with a soft conductive component and/or a metal sheet, and the soft conductive component and/or the metal sheet is located inside the soft substrate or at least partially exposed on the surface of the soft substrate.

Furthermore, the metal sheet has electrical corrosion resistance and oxidation resistance; the metal sheet is titanium metal, or aluminum metal plated with platinum, or stainless steel plated with platinum, or titanium metal plated with platinum.

Furthermore, the conductive material is a conductive metal nanomaterial, or a carbon material, or a conductive polymer, or a conductive hydrogel; or the conductive material is a conductive metal nanomaterial, a carbon material, a conductive polymer, or a conductive hydrogel, or a combination of one or two or more thereof.

Furthermore, its volume resistivity is ≤1*10 ^-3 Ω·cm.

Furthermore, the soft matrix is silicone or multi-component rubber.

Furthermore, the elastic modulus of the soft matrix is ≤10MPa, its Shore hardness is ≤60°, and its maximum elongation is ≤800%.

Furthermore, the object includes a wafer, a base, and a substrate.

Furthermore, the area of the conductive region is smaller than the area of the wafer/base/substrate.

Furthermore, the wafer/base/substrate includes an inner ring portion and an outer ring portion, and its conductive area is set corresponding to the inner ring portion.

The present invention also discloses a polishing head, comprising: the conductive adsorption film as described above, a conductive support member arranged adjacent to the conductive adsorption film, and a current lead-out assembly connected to the conductive support member, wherein the conductive support member is provided with a deformation accommodating cavity, and the conductive adsorption film can be deformed toward the deformation accommodating cavity under the action of negative pressure to adsorb a wafer or a base or a substrate.

Furthermore, the conductive unit of the conductive adsorption film conducts current to the wafer or the substrate or the base.

Furthermore, it also includes an electrical connection medium, and the conductive adsorption film conducts current to the wafer or the base or the substrate through the electrical connection medium.

The beneficial effects of the present invention are: 1) the conductive adsorption film in the polishing head that contacts the wafer/base/substrate has good softness and conductivity at the same time; 2) the polishing head is conductive, which simplifies the circuit design of the electrochemical polishing and planarization equipment; 3) the current on the wafer is exported through the conductive adsorption film that matches the size of the wafer, and the electrochemical reaction on the wafer is very uniform.

In order to enable people in the technical field to better understand the scheme of the present invention, the following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical scheme in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technical personnel in the field without creative labor should fall within the scope of protection of the present invention.

A conductive adsorption film includes a deformable soft substrate 1 for adsorbing an object, and one or more conductive units 2. The one or more conductive units 2 can make at least part of the conductive adsorption film 3 conductive.

Objects adsorbed include wafers, substrates, and bases.

The softness of the soft matrix 1 means that the soft matrix 1 as a whole has a certain elastic modulus, hardness and elongation. Silicone and multi-elastomer are selected as the material of the soft matrix 1, and the elastic modulus is ≤10MPa, the Shore hardness is ≤60°, and the maximum elongation is ≤800%.

The conductivity of the conductive adsorption film 3 means that the volume resistivity of the flexible substrate 1 is ≤ 1*10 ^-3 Ω·cm.

The above-mentioned "at least a part of the conductive adsorbent film 3 has conductivity" means that a part of the conductive adsorbent film 3 has conductivity, or the conductive adsorbent film 3 as a whole has conductivity.

The overall conductivity can be understood as the overall conductivity of the soft matrix 1, which can be formed by a conductive material. Further, the conductive material matrix can be silicone, multi-element rubber; the doped conductive dielectric can be one or more composite additions such as nanosilver, nanosilver coated glass, acetylene carbon black, carbon nanotubes, high conductive graphene, etc.; and in the case of partial conductivity, the conductive material matrix can be partially doped with a conductive dielectric; or on the basis of the overall conductive film, a surface insulation treatment can be performed locally, including but not limited to pasting, spraying, and inlaying insulating materials.

In order to achieve similar conductive performance at all locations of the conductive adsorption film 3 , when there are multiple conductive units 2 , the resistances of the multiple conductive units 2 are the same or similar.

When the above-mentioned conductive unit 2 is understood as a point area, a plurality of conductive units 2 can be connected to form a conductive surface, that is, a plurality of conductive units 2 of small areas are combined to form a conductive surface of a large area.

Specifically, in the first case, the conductive units 2 may be distributed at intervals on the outer surface of the flexible substrate 1; or, in the second case, the conductive units 2 may be continuously distributed on the outer surface of the flexible substrate 1; or, in the third case, at least a portion of the conductive units 2 is located inside the flexible substrate 1, in which case a portion of the conductive units 2 is located on the surface or side of the flexible substrate 1; or, a combination of two or three forms, namely, the conductive units 2 are distributed at intervals on the outer surface of the flexible substrate 1, the conductive units 2 are continuously distributed on the outer surface of the flexible substrate 1, and the conductive units 2 are at least partially located inside the flexible substrate 1. In other words, two or three of the above-mentioned first case, second case and third case exist at the same time.

Embodiment 1

In this embodiment, the conductive adsorption film 3 is bulk conductive, in other words, it is conductive throughout the thickness direction and the plane direction.

At this time, the conductive material may be mixed into the soft substrate 1 during the processing to serve as the conductive unit 2, which includes the soft substrate 1 and the conductive material being formed once or formed multiple times, and the conductive material may be one or two or more.

In this embodiment, the conductive material is a conductive metal nanomaterial, or a carbon material, or a conductive polymer or hydrogel, or a combination of one or two or more of the conductive metal nanomaterial, carbon material, conductive polymer, and conductive hydrogel. Specifically, the conductive metal nanomaterial is nanogold, or nanogold coated glass, or nanosilver, or nanosilver coated glass; the carbon material is acetylene black, or carbon nanotubes, or highly conductive graphene; the soft matrix 1 is silicone or multi-element rubber, and the soft matrix 1 and the conductive material are mixed and weighed, mixed, densely calcined, molded, formed, trimmed, and then forged again to finally obtain a finished product, as shown in FIG1 .

The conductive material may be one kind or a combination of two or more kinds.

Embodiment 2

In this embodiment, the conductive adsorption film 3 is surface conductive, in other words, the soft film is a sandwich structure with conductive inner and outer surfaces and an insulating middle layer, as shown in FIG. 2 and FIG. 3 .

Embodiment 3

In this embodiment, a plurality of conductive units 2 form a soft conductive component, which is disposed on the surface of a soft substrate 1.

Specifically, the soft conductive component is a soft metal mesh, a carbon cloth, or a soft conductive foil, or a combination of a soft metal mesh, a carbon cloth, and a soft conductive foil, and the soft conductive part is attached to one side surface or both sides of the soft substrate 1, as shown in Figures 4 to 6. Specifically, the soft metal mesh is a mesh structure of metal filaments interwoven, or a mesh structure of a fabric surface plated with metal.

The number of the flexible conductive parts is one or two or more, and the shape can be any shape such as circle, ellipse, polygon, star, etc.

The horizontal projection area of the soft conductive component accounts for 0.1-1 of the horizontal projection area of the conductive adsorption film 3.

Embodiment 4

In this embodiment, a plurality of conductive units 2 form a soft conductive component, which is disposed inside the soft substrate 1 and at least partially exposed on the surface of the soft substrate 1.

Specifically, the soft conductive component is a soft metal mesh, a carbon cloth, or a soft conductive foil, or a combination of the soft metal mesh, the carbon cloth, and the soft conductive foil. The soft conductive component is embedded in the soft substrate 1, and can be embedded in one layer or multiple layers. In the multi-layer structure, the layers are separated by the soft substrate 1. At this time, the end of the soft conductive component is exposed on the side surface of the soft substrate 1, as shown in FIG7 .

FIG8 is a partial schematic diagram of a flexible conductive component.

Of course, it is also possible to adhere a soft conductive component to the surface after embedding one or more layers.

The number of the flexible conductive parts is one or two or more, and the shape can be any shape such as circle, ellipse, polygon, star, etc.

The horizontal projection area of the soft conductive component accounts for 0.1-1 of the horizontal projection area of the conductive adsorption film 3.

Embodiment 5

In this embodiment, the soft conductive component can also be a conductive coating electroplated on the surface of the soft substrate 1, or a conductive coating sprayed on the surface of the soft substrate 1, which can be specifically attached to the surface of the soft substrate 1 in the form of metal/polymer/carbon material sprayed or electroplated.

Embodiment 6

As shown in FIG. 9 to FIG. 11 , in this embodiment, a plurality of conductive units 2 form a metal sheet, the front side of the metal sheet is exposed on the surface of the soft substrate 1, and the back side is connected to a conductive connector 21.

Specifically, the assembly form can be a metal sheet inlaid with a soft substrate 1, wherein the lower surface of the soft substrate 1 is hollowed out, a lightweight metal sheet is attached to the hollowed out area, and the metal sheet and the soft substrate 1 are glued to prevent leakage, and the number of the metal sheets is one or more. When there are multiple metal sheets, the metal sheets are embedded in the surface of the soft substrate 1 in an interconnected form.

Furthermore, the soft substrate 1 may be conductive or non-conductive. When the soft substrate 1 is non-conductive, there is a conductive connector 21 on the back of the metal sheet. In this embodiment, the conductive connector 21 is a metal spring assembly. When pressure is applied to the cavity of the soft substrate 1, the reverse force compresses the metal spring assembly to contact the conductive support 6 of the conductive adsorption film 3.

Furthermore, the shape of the metal sheet is circular, elliptical, star-shaped, polygonal, etc.

Furthermore, the area ratio of the metal sheet to the soft substrate 1 is between 5% and 60%. In other words, the horizontal projection area of the metal sheet accounts for 5% to 60% of the horizontal projection area of the soft substrate 1.

Furthermore, the ratio of the thickness of the metal sheet to the thickness of the soft substrate 1 can be between 0.8-1.0, that is, s1/s2=0.8-1.0 in FIG. 11 . When the thickness of the two is the same, no metal spring assembly is required.

The metal sheet is resistant to electrical corrosion and oxidation. Specifically, the material of the metal sheet is titanium, or aluminum plated with platinum, or stainless steel plated with platinum, or titanium plated with platinum.

Embodiment 7

In the fifth embodiment, the soft substrate 1 covers one side surface and the side wall in the thickness direction of the metal sheet. Different from this, in this embodiment, the metal sheet is set through the soft substrate 1, and it is not necessary to connect the conductive connector 21 on the back of the metal sheet.

Embodiment 8

In the fifth embodiment, the metal sheet is embedded in the soft matrix 1. In this embodiment, the metal sheet is in a bulk phase, as shown in FIG. 12 and FIG. 13 , wherein the metal sheet is hollowed out, wherein the soft matrix 1 is attached to the hollowed out portion, and the metal sheet and the soft matrix 1 are adhesively treated to prevent leakage, and the number of the soft matrix 1 is one or more.

Furthermore, the hollowed-out shape is circular, elliptical, star-shaped, polygonal, etc.

Furthermore, the area ratio of the soft matrix 1 to the metal sheet is between 5% and 60%.

Furthermore, the ratio of the thickness of the soft substrate 1 to the thickness of the metal sheet is between 0.2-1.0, that is, s2/s1=0.8-1.0 in FIG. 13 .

The metal sheet is resistant to electrical corrosion and oxidation. Specifically, the material of the metal sheet is titanium-plated platinum. More specifically, the metal sheet is titanium-plated platinum.

The flexible substrate 1 may be electrically conductive or non-electrically conductive.

In this embodiment, the metal sheet covers one side surface and the side wall in the thickness direction of the soft substrate 1. In other embodiments, the metal sheet may also include one side surface of the soft substrate 1.

Embodiment 9

In the third, fourth and fifth embodiments, the soft substrate 1 is not conductive. In this embodiment, the soft substrate 1 is conductive. In other words, the soft substrate 1 can be realized by using the pipeline in the first embodiment to become a conductive adsorption film 3. On this basis, a soft conductive component is continuously added to enhance the conductive ability of the conductive adsorption film 3, as shown in FIG14. The soft conductive component is located inside the soft substrate 1 or at least partially exposed on the surface of the soft substrate 1.

Similarly, in Embodiment 6 and Embodiment 8, the flexible substrate 1 may be conductive or non-conductive. The flexible substrate 1 may be realized by using the pipeline in Embodiment 1 to become a conductive adsorption film 3, on which a metal sheet is continuously added to enhance the conductive ability of the conductive adsorption film 3. The metal sheet is located inside the flexible substrate 1 or at least partially exposed on the surface of the flexible substrate 1.

Embodiment 10

In the above-mentioned Embodiment 1 to Embodiment 9, the conductive region of the conductive adsorption film 3 is not limited, and the conductive region may be the entire conductive adsorption film 3 or a partial region of the conductive adsorption film 3 .

In this embodiment, the area of the conductive region is defined to be smaller than the area of the object, that is, the area of the conductive region is smaller than the area of the wafer or the base or the substrate.

Furthermore, the wafer/base/substrate 7 includes an inner ring portion and an outer ring portion, and the conductive area is set corresponding to the inner ring portion. The radial width of the outer ring portion on one side is 0.2-2 mm.

Embodiment 11

The present invention also discloses a polishing head 4, which includes any one of the above-mentioned conductive adsorption films 3, a conductive support 6 arranged adjacent to the conductive adsorption film 3, and a current lead-out assembly 5 connected to the conductive support 6, wherein a deformation accommodating cavity is arranged on the conductive support 6, and the conductive adsorption film 3 can be deformed toward the deformation accommodating cavity under the action of negative pressure, thereby adsorbing a wafer or a base or a substrate.

The conductive unit 2 of the conductive adsorption film 3 conducts the current to the wafer or the base or the substrate. The conductive unit 2 may directly conduct the current to the wafer or the base or the substrate, or the conductive unit 2 may indirectly conduct the current to the wafer or the base or the substrate through an electrical connection medium.

Specifically, as shown in FIG. 15 , after the wafer or substrate is loaded and adsorbed on the lower surface of the conductive adsorption film 3 through the conductive adsorption film 3, during the polishing process, the pressure medium cavity of the conductive adsorption film 3 is pressurized, and the current lead-out component 5 through the polishing head 4 is energized to the constant voltage/constant current power supply. Under the action of the chemical liquid, electrochemical mechanical polishing and flattening of the wafer or substrate can be achieved.

The loading of the wafer or substrate is achieved by the support and the conductive adsorption film 3 cooperating to form a negative pressure space. As shown in Figures 16 and 17, when the pressure medium cavity of the conductive adsorption film 3 applies negative pressure to the wafer or substrate, the conductive adsorption film 3 is deformed to form a negative pressure space between the conductive adsorption film 3 and the support, thereby achieving the adsorption of the wafer or substrate (which can be achieved by the existing technology and will not be repeated here), thereby achieving close contact between the wafer or substrate, the conductive adsorption film 3, and the conductive support 6. When power is turned on, the circuit path of the system can be realized through the current lead-out component 5.

The realization forms of different conductive adsorption films 3 only change the current access points of the conductive adsorption film 3 and the conductive support 6. In the conductive adsorption film 3 with bulk phase uniform conductivity (meaning that all regions and parts of the conductive adsorption film participate in the conduction), all points in contact with the conductive support 6 are current access points; in the conductive adsorption film 3 with bulk phase partial conductivity (meaning that only part of the region or structure of the conductive adsorption film participates in the conduction), the metal sheet embedded in the insulating soft matrix 1 will serve as the current access point, and the insulating soft matrix 1 part will carry the wafer or base or substrate for loading and unloading. For example, when the soft substrate 1 is combined with the soft conductive component, the conductive soft substrate 1 or the soft conductive component in contact with the conductive support 6 can be used as the current access point, and the conductive adsorption film 3 as a whole can bear the functional tasks such as loading and unloading of the wafer or the base or the substrate.

As shown in FIGS. 18 to 20 , the conductive adsorption film 3 includes an adsorption surface 31 in contact with the wafer/base/substrate and an airtight structure skirt 32. The adsorption surface 31 is used to contact the wafer/base/substrate and conduct electricity, while the airtight structure skirt 32 ensures the airtightness of the conductive adsorption film and is used to fix the conductive adsorption film. Of course, in other embodiments, the conductive adsorption film 3 may also have other structures.

The above-mentioned specific implementation channels are used to explain the present invention rather than to limit the present invention. Any modifications and changes made to the present invention within the spirit and protection scope of the claims of the present invention shall fall within the protection scope of the present invention.

1: Soft substrate 2: Conductive unit 21: Conductive connector 3: Conductive adsorption film 31: Adsorption surface 32: Airtight structure skirt 4: Polishing head 5: Current extraction component 6: Conductive support 7: Wafer/base/substrate

FIG. 1 is a schematic diagram of the soft substrate processing process in Example 1 of the present invention. FIG. 2 is a front view of the conductive adsorption film in Example 2 of the present invention. FIG. 3 is a cross-sectional view of the conductive adsorption film in Example 2 of the present invention. FIG. 4 is a front view of the wafer/base/substrate in Example 3 of the present invention. FIG. 5 is a cross-sectional view of the conductive adsorption film in Example 3 of the present invention. FIG. 6 is a cross-sectional view of the conductive adsorption film in Example 3 of the present invention. FIG. 7 is a cross-sectional view of the conductive adsorption film in Example 4 of the present invention. FIG. 8 is a schematic diagram of the layout of the soft conductive component in Example 4 of the present invention. FIG. 9 is a front view of the conductive adsorption film in Example 5 of the present invention. FIG. 10 is a rear view of the wafer/base/substrate in Example 5 of the present invention. FIG. 11 is a cross-sectional view of the conductive adsorption film in Example 5 of the present invention. FIG. 12 is a front view of the conductive adsorption film in Example 7 of the present invention. FIG. 13 is a cross-sectional view of the conductive adsorption film in Example 7 of the present invention. FIG. 14 is a schematic diagram of the preparation process in Example 9 of the present invention. FIG. 15 is a cross-sectional view in Example 10 of the present invention. FIG. 16 is a partial cross-sectional view in Example 10 of the present invention. FIG. 17 is a partial cross-sectional view in Example 10 of the present invention, at which time the conductive adsorption film adsorbs the wafer/base/substrate. FIG. 18 is a three-dimensional view of the conductive adsorption film in Example 10 of the present invention. FIG. 19 is a cross-sectional view of the conductive adsorption film in Example 10 of the present invention. FIG. 20 is a front view of the conductive adsorption film in Example 10 of the present invention.

1: Soft matrix

2: Conductive unit

Claims (25)

A conductive adsorption film comprises: A soft substrate that can be deformed and used to adsorb objects; One or more conductive units so that at least part of the conductive adsorption film has conductivity. The conductive adsorption film as described in claim 1, wherein: it is partially conductive or is conductive as a whole. A conductive adsorption film as described in claim 1, wherein: the resistance of the multiple conductive units is the same or similar. A conductive adsorption film as described in claim 1, wherein: the conductive units are distributed at intervals on the outer surface of the soft substrate; or, the conductive units are continuously distributed on the outer surface of the soft substrate; or, the conductive units are at least partially located inside the soft substrate; or, a combination of two or three forms: the conductive units are distributed at intervals on the outer surface of the soft substrate, the conductive units are continuously distributed on the outer surface of the soft substrate, and the conductive units are at least partially located inside the soft substrate. A conductive adsorption film as described in claim 1, wherein: the multiple conductive units are connected to form a conductive surface. The conductive adsorption film as described in claim 4, wherein: a conductive material is mixed into the soft substrate during processing to serve as the conductive unit; the conductive material is one or two or more. A conductive adsorption film as described in claim 1, wherein: the plurality of conductive units form a soft conductive component, the soft conductive component is arranged on the surface of the soft substrate, or the soft conductive component is arranged inside the soft substrate and is at least partially exposed on the surface of the soft substrate. The conductive adsorbent film as described in claim 7, wherein: the horizontal projection area of the soft conductive component occupies 0.1-1 of the horizontal projection area of the conductive adsorbent film. The conductive adsorption film as described in claim 7, wherein: the soft conductive component is a soft metal mesh, a carbon cloth, or a soft conductive foil; the number of the soft conductive components is one or two or more; the shape of the soft conductive component is circular, elliptical, polygonal, or star-shaped. A conductive adsorption film as described in claim 1, wherein: the multiple conductive units form a metal sheet, the front side of the metal sheet is exposed to the surface of the soft substrate, and the back side is connected to a conductive connector; or, the metal sheet is penetrated and set in the soft substrate; or, the metal sheet at least covers one side surface and/or the side wall in the thickness direction of the soft substrate. The conductive adsorption film as described in claim 10, wherein: the thickness of the metal sheet accounts for 0.8-1.0 of the thickness of the soft substrate; or, the thickness of the soft substrate accounts for 0.2-1.0 of the thickness of the metal sheet. A conductive adsorption film as described in claim 10, wherein: the horizontal projection area of the metal sheet occupies 5-60% of the horizontal projection area of the soft substrate; or, the horizontal projection area of the soft substrate occupies 5-60% of the horizontal projection area of the metal sheet. The conductive adsorption film as described in claim 7, wherein: the soft conductive component is a conductive coating electroplated on the surface of the soft substrate, or a conductive coating sprayed on the surface of the soft substrate. A conductive adsorption film as described in claim 6, wherein: the soft substrate is also provided with a soft conductive component and/or a metal sheet, and the soft conductive component and/or the metal sheet are located inside the soft substrate or at least partially exposed on the surface of the soft substrate. The conductive adsorption film as described in claim 10, wherein: the metal sheet has electrical corrosion resistance and oxidation resistance; the metal sheet is titanium metal, or aluminum metal plated with platinum, or stainless steel plated with platinum, or titanium metal plated with platinum. A conductive adsorption film as described in claim 6, wherein: the conductive material is a conductive metal nanomaterial, or a carbon material, or a conductive polymer, or a conductive hydrogel; or the conductive material is a conductive metal nanomaterial, a carbon material, a conductive polymer, a conductive hydrogel, or a combination of one or two or more thereof. The conductive adsorption film as described in claim 1, wherein: its volume resistivity is ≤1*10 ^-3 Ω·cm. The conductive adsorption film as described in claim 1, wherein: the soft matrix is silicone or multi-elastomer. The conductive adsorption film as described in claim 1, wherein: the elastic modulus of the soft matrix is ≤10MPa, its Shore hardness is ≤60°, and its maximum elongation is ≤800%. A conductive adsorption film as described in claim 1, wherein: the object includes a wafer, a base, and a substrate. The conductive adsorption film as described in claim 20, wherein: the area of its conductive region is smaller than the area of the wafer/the base/the substrate. A conductive adsorption film as described in claim 20, wherein: the wafer/the base/the substrate includes an inner ring part and an outer ring part, and its conductive area is set corresponding to the inner ring part. A polishing head comprises: a conductive adsorption film as described in any one of claims 1 to 22, a conductive support member arranged adjacent to the conductive adsorption film, and a current lead-out assembly connected to the conductive support member, wherein the conductive support member is provided with a deformation accommodating cavity, and the conductive adsorption film can deform toward the deformation accommodating cavity under the action of negative pressure to adsorb a wafer or a base or a substrate. A polishing head as described in claim 23, wherein: the conductive unit of the conductive adsorption film conducts current to the wafer or the base or the substrate. The polishing head as described in claim 23 further includes an electrical connection medium, and the conductive adsorption film conducts electric current to the wafer or the base or the substrate through the electrical connection medium.