TWI842008B - Protection element and method of manufacturing the same - Google Patents

Protection element and method of manufacturing the same Download PDF

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TWI842008B
TWI842008B TW111125683A TW111125683A TWI842008B TW I842008 B TWI842008 B TW I842008B TW 111125683 A TW111125683 A TW 111125683A TW 111125683 A TW111125683 A TW 111125683A TW I842008 B TWI842008 B TW I842008B
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electrode
substrate
heating element
insulating layer
fusible conductor
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TW111125683A
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TW202403810A (en
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江財寶
江智偉
楊士賢
林伯軒
陳樂霖
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大毅科技股份有限公司
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/10Energy storage using batteries

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Abstract

The present disclosure relates to a protection element. The protection element includes a substrate, a first electrode disposed on the substrate and having a first extending portion, a second electrode disposed on the substrate and spaced apart from the first electrode, and a heating element disposed between the first electrode and the second electrode. The protection element also includes a fusible conductor connecting between the first electrode and the second electrode. The fusible conductor is configured to be fused and cut off by heat from the heating element. At least a part of the first extending portion of the first electrode is disposed between the substrate and the heating element and contacting the heating element. The present disclosure also relates to a method of manufacturing a protection element.

Description

保護元件及其製造方法Protection element and manufacturing method thereof

本發明係關於一種保護元件及其製造方法,具體而言,係關於藉由發熱體之加熱使可熔導體熔斷而阻斷電流路徑的保護元件。The present invention relates to a protection element and a manufacturing method thereof, and more particularly, to a protection element that blocks a current path by melting a fusible conductor through heating of a heating element.

在電子裝置(例如鋰離子電池或其他二次電池)的保護電路中,可使用具有過電流及過電壓防護功能的保護元件。該保護元件之可熔導體於電流超過額定值時可被熔斷;並且可於電壓超過額定值時,藉由其發熱體之加熱而使該可熔導體熔斷,達到保護電子裝置的效果。In the protection circuit of electronic devices (such as lithium-ion batteries or other secondary batteries), protection components with overcurrent and overvoltage protection functions can be used. The fusible conductor of the protection component can be melted when the current exceeds the rated value; and when the voltage exceeds the rated value, the fusible conductor can be melted by heating its heating element, thereby achieving the effect of protecting the electronic device.

本揭露之一實施例係關於一種保護元件,包括基板、設置於該基板上並具有第一延伸部的第一電極、設置於該基板上並與該第一電極間隔開的第二電極、及設置於該第一電極與該第二電極之間的發熱體。該保護元件還包括連接在該第一電極及該第二電極之間的可熔導體。該可熔導體經配置以藉由該發熱體之發熱而熔斷。該第一電極的該第一延伸部具有至少一部分位於該發熱體與該基板之間並接觸該發熱體。One embodiment of the present disclosure is related to a protective element, including a substrate, a first electrode disposed on the substrate and having a first extension, a second electrode disposed on the substrate and spaced apart from the first electrode, and a heating element disposed between the first electrode and the second electrode. The protective element also includes a fusible conductor connected between the first electrode and the second electrode. The fusible conductor is configured to be melted by the heat generated by the heating element. The first extension of the first electrode has at least a portion located between the heating element and the substrate and in contact with the heating element.

本揭露之一實施例係關於一種保護元件之製造方法,包括提供基板;及形成第一電極、第二電極及第三電極於該基板上。該第一電極具有第一延伸部且該第三電極具有第二延伸部。該製造方法還包括形成發熱體覆蓋該第一延伸部及該第二延伸部;及形成可熔導體連接於該第一電極與該第二電極之間。One embodiment of the present disclosure is related to a manufacturing method of a protection element, including providing a substrate; and forming a first electrode, a second electrode and a third electrode on the substrate. The first electrode has a first extension portion and the third electrode has a second extension portion. The manufacturing method also includes forming a heating element to cover the first extension portion and the second extension portion; and forming a fusible conductor connected between the first electrode and the second electrode.

圖1A所示為根據本揭露之部分實施例之保護元件1之立體圖。FIG. 1A is a perspective view of a protection element 1 according to some embodiments of the present disclosure.

保護元件1可包括基板10、電極11(或稱為第一電極11)、電極12(或稱為第二電極12)、電極13(或稱為第三電極13)、絕緣層14(或稱為第一絕緣層14)、發熱體(例如圖1B所示之發熱體15)、絕緣層16(或稱為第二絕緣層16)、防焊層17a、防焊層17b、可熔導體18及蓋體19。在一些實施例中,發熱體可被包圍在絕緣層14及絕緣層16之間。The protection element 1 may include a substrate 10, an electrode 11 (or referred to as a first electrode 11), an electrode 12 (or referred to as a second electrode 12), an electrode 13 (or referred to as a third electrode 13), an insulating layer 14 (or referred to as a first insulating layer 14), a heating element (such as the heating element 15 shown in FIG. 1B ), an insulating layer 16 (or referred to as a second insulating layer 16), a solder mask 17a, a solder mask 17b, a fusible conductor 18, and a cover 19. In some embodiments, the heating element may be enclosed between the insulating layer 14 and the insulating layer 16.

保護元件1可應用在電子裝置(例如鋰離子電池或其他二次電池)的保護電路中。電極11及電極12可設置於基板10的相對的兩端或兩側。電極11及電極12可透過可熔導體18電連接。可熔導體18可透過電極11及電極12與外部電路(例如保護電路)之電路基板電連接,構成外部電路之通電路徑的一部分。當超過額定值的電流流經可熔導體18時,可熔導體18因電流產生的熱量(亦即焦耳熱)而熔斷。The protection element 1 can be applied to the protection circuit of an electronic device (such as a lithium ion battery or other secondary battery). The electrode 11 and the electrode 12 can be arranged at opposite ends or sides of the substrate 10. The electrode 11 and the electrode 12 can be electrically connected through the fusible conductor 18. The fusible conductor 18 can be electrically connected to the circuit substrate of an external circuit (such as a protection circuit) through the electrode 11 and the electrode 12, and constitute a part of the current path of the external circuit. When a current exceeding the rated value flows through the fusible conductor 18, the fusible conductor 18 is melted due to the heat (i.e., Joule heat) generated by the current.

電極13可設置於基板10的一端或一側,並與電極11及電極12分開。電極13可將發熱體與外部電路之電路基板電連接,當電壓超過額定值時(例如當鋰離子電池過度充電時),藉由發熱體之加熱可使可熔導體18熔斷,達到保護電子裝置的效果。The electrode 13 can be disposed at one end or one side of the substrate 10 and is separated from the electrode 11 and the electrode 12. The electrode 13 can electrically connect the heating element to the circuit substrate of the external circuit. When the voltage exceeds the rated value (for example, when the lithium ion battery is overcharged), the heating of the heating element can cause the fusible conductor 18 to melt, thereby achieving the effect of protecting the electronic device.

圖1B所示為根據本揭露之部分實施例之保護元件之俯視圖。在一些實施例中,圖1B為圖1A之保護元件1之俯視圖。為簡潔之緣故,圖1B中僅描繪基板10、電極11、電極12、電極13、絕緣層14及發熱體15。FIG1B is a top view of a protection element according to some embodiments of the present disclosure. In some embodiments, FIG1B is a top view of the protection element 1 of FIG1A. For the sake of simplicity, FIG1B only depicts the substrate 10, the electrode 11, the electrode 12, the electrode 13, the insulating layer 14 and the heating element 15.

參照圖1B,基板10可包括絕緣基板,例如陶瓷基板、玻璃基板、樹脂基板、絕緣處理金屬基板等。在一些實施例中,基板10可包括(但不限於)硼矽酸鹽玻璃(borophosphosilicate glass,BPSG)、經摻雜矽酸鹽玻璃(undoped silicate glass,USG)、矽(silicon)、氧化矽(silicon oxide)、氮化矽(silicon nitride)、氮氧化矽(silicon oxynitride)、氧化鋁(aluminum oxide)、氮化鋁(aluminum nitride)、聚醯亞胺(Polyimide,PI)、ABF基材(Ajinomoto build-up film,ABF)、模塑膠(molding compounds)、預浸漬複合纖維(pre-impregnated composite fibers)(例如,預浸材料)、及其中之組合、或其他類似物。模塑膠的實例可包括(但不限於)環氧樹脂(epoxy resin)(包含分散其中的填料(fillers))。預浸材料的實例可包括(但不限於)通過堆疊或層壓(laminating)多個預浸漬材料及/或片料(sheets)所形成的多層結構。在一些實施例中,基板10可包括(但不限於)電路板(如FR4)。基板10可包括表面103。在一些實施例中,表面103可包括保護元件1之側面、側邊、周圍或邊界。1B , the substrate 10 may include an insulating substrate, such as a ceramic substrate, a glass substrate, a resin substrate, an insulating metal substrate, etc. In some embodiments, the substrate 10 may include, but is not limited to, borophosphosilicate glass (BPSG), undoped silicate glass (USG), silicon, silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, aluminum nitride, polyimide (PI), Ajinomoto build-up film (ABF), molding compounds, pre-impregnated composite fibers (e.g., prepreg materials), combinations thereof, or the like. Examples of molding compounds may include, but are not limited to, epoxy resins (including fillers dispersed therein). Examples of prepreg materials may include, but are not limited to, a multi-layer structure formed by stacking or laminating a plurality of prepreg materials and/or sheets. In some embodiments, substrate 10 may include, but is not limited to, a circuit board (such as FR4). Substrate 10 may include surface 103. In some embodiments, surface 103 may include a side, side, periphery, or border of protective element 1.

在一些實施例中,基板10可包括通孔10v1(或稱為第一通孔10v1)、通孔10v2(或稱為第二通孔10v2)及通孔10v3(或稱為第三通孔10v3)。從俯視圖觀看時,通孔10v1、通孔10v2及通孔10v3可分別位在電極11、電極12及電極13的下方而被遮蔽,故以虛線表示。In some embodiments, the substrate 10 may include a through hole 10v1 (or referred to as a first through hole 10v1), a through hole 10v2 (or referred to as a second through hole 10v2), and a through hole 10v3 (or referred to as a third through hole 10v3). When viewed from a top view, the through hole 10v1, the through hole 10v2, and the through hole 10v3 may be respectively located below the electrode 11, the electrode 12, and the electrode 13 and be shielded, and are therefore represented by dotted lines.

在一些實施例中,通孔10v1、通孔10v2及通孔10v3可分別與表面103間隔開。通孔10v1、通孔10v2及通孔10v3可分別位在基板10的表面103以內。通孔10v1、通孔10v2及通孔10v3可分別位在基板10的邊界內。例如,通孔10v1、通孔10v2及通孔10v3可分別未從基板10的表面103曝露出來。In some embodiments, the through-hole 10v1, the through-hole 10v2, and the through-hole 10v3 may be spaced apart from the surface 103, respectively. The through-hole 10v1, the through-hole 10v2, and the through-hole 10v3 may be located within the surface 103 of the substrate 10, respectively. The through-hole 10v1, the through-hole 10v2, and the through-hole 10v3 may be located within the boundary of the substrate 10, respectively. For example, the through-hole 10v1, the through-hole 10v2, and the through-hole 10v3 may not be exposed from the surface 103 of the substrate 10, respectively.

在一些實施例中,通孔10v1、通孔10v2及通孔10v3可分別與電極11、電極12及電極13電連接。在一些實施例中,通孔10v1、通孔10v2及通孔10v3可分別將電極11、電極12及電極13電連接至一外部端子(例如圖1D所示之外部端子11b、外部端子12b及圖1E所示之外部端子13b)。In some embodiments, the through-hole 10v1, the through-hole 10v2 and the through-hole 10v3 can be electrically connected to the electrode 11, the electrode 12 and the electrode 13, respectively. In some embodiments, the through-hole 10v1, the through-hole 10v2 and the through-hole 10v3 can electrically connect the electrode 11, the electrode 12 and the electrode 13 to an external terminal (e.g., the external terminal 11b shown in FIG. 1D, the external terminal 12b and the external terminal 13b shown in FIG. 1E), respectively.

在一些實施例中,通孔10v1、通孔10v2及通孔10v3可分別包括(但不限於)銅(Cu)、金(Au)、銀(Ag)、鋁(Al)、鎳(Ni)、鈦(Ti)、鎢(W)、鉻(Cr)、錫(Sn)、或其他金屬或合金。例如,在一些實施例中,合金可包括鎳鉻合金(如鎳鉻鋁、鎳鉻矽)、鎳銅合金(如鎳銅錳)等。在一些實施例中,電極11及電極12可分別連接兩個通孔,而電極13可連接一個通孔。在一些實施例中,通孔的大小、數量及位置可依保護元件1之額定電流大小而調整。例如,電極11及電極12可分別連接三個或更多個通孔。例如,電極13可連接兩個或更多個通孔。In some embodiments, the through hole 10v1, the through hole 10v2 and the through hole 10v3 may include (but not limited to) copper (Cu), gold (Au), silver (Ag), aluminum (Al), nickel (Ni), titanium (Ti), tungsten (W), chromium (Cr), tin (Sn), or other metals or alloys. For example, in some embodiments, the alloy may include nickel-chromium alloy (such as nickel-chromium-aluminum, nickel-chromium-silicon), nickel-copper alloy (such as nickel-copper-manganese), etc. In some embodiments, the electrode 11 and the electrode 12 may be connected to two through holes respectively, and the electrode 13 may be connected to one through hole. In some embodiments, the size, number and position of the through hole can be adjusted according to the rated current size of the protection element 1. For example, the electrodes 11 and 12 may be connected to three or more through holes, respectively. For example, the electrode 13 may be connected to two or more through holes.

如圖1B所示,電極11、電極12及電極13可靠近基板10的三個相鄰的側邊或側面。例如電極12靠近基板10的左側,電極13靠近基板10的下側,而電極11靠近基板10的右側以及上側。1B , electrodes 11, 12, and 13 may be close to three adjacent sides or surfaces of substrate 10. For example, electrode 12 is close to the left side of substrate 10, electrode 13 is close to the bottom side of substrate 10, and electrode 11 is close to the right side and top side of substrate 10.

在一些實施例中,電極11可包括複合式電極。例如,電極11可靠近基板10的兩個相鄰的側邊(例如右側以及上側)。電極11可沿著基板10的兩個相鄰的側邊而延伸。電極11可從基板10的一側邊延伸到相鄰的另一側邊。In some embodiments, the electrode 11 may include a composite electrode. For example, the electrode 11 may be close to two adjacent sides (e.g., the right side and the upper side) of the substrate 10. The electrode 11 may extend along two adjacent sides of the substrate 10. The electrode 11 may extend from one side of the substrate 10 to another adjacent side.

電極11可具有延伸部11e(或稱為第一延伸部11e)。延伸部11e可從電極11朝電極12的方向(例如朝圖1B中之X軸方向)延伸,並朝電極13的方向(例如朝圖1B中之Y軸反方向)延伸。延伸部11e可具有一拐角。延伸部11e可具有兩個延伸方向。The electrode 11 may have an extension portion 11e (or referred to as a first extension portion 11e). The extension portion 11e may extend from the electrode 11 toward the electrode 12 (e.g., toward the X-axis direction in FIG. 1B ), and toward the electrode 13 (e.g., in the opposite direction of the Y-axis in FIG. 1B ). The extension portion 11e may have a corner. The extension portion 11e may have two extension directions.

延伸部11e可具有一部分位於絕緣層14及發熱體15之間。例如,延伸部11e可具有一部分接觸(例如直接接觸)絕緣層14及發熱體15。例如,延伸部11e可具有一部分延伸至發熱體15下方並具有一端部從發熱體15曝露出來。在一些實施例中,延伸部11e位於發熱體15下方的部分的寬度可不變或一致。例如,延伸部11e位於發熱體15下方的部分可為一矩形。延伸部11e的延伸方向可包括矩形的長邊。The extension portion 11e may have a portion located between the insulating layer 14 and the heating element 15. For example, the extension portion 11e may have a portion that contacts (e.g., directly contacts) the insulating layer 14 and the heating element 15. For example, the extension portion 11e may have a portion that extends below the heating element 15 and has an end exposed from the heating element 15. In some embodiments, the width of the portion of the extension portion 11e located below the heating element 15 may be constant or uniform. For example, the portion of the extension portion 11e located below the heating element 15 may be a rectangle. The extension direction of the extension portion 11e may include the long side of the rectangle.

電極13可具有延伸部13e(或稱為第二延伸部13e)。延伸部13e可從電極13朝電極11的方向(例如朝圖1B中之Y軸方向)延伸。The electrode 13 may have an extension portion 13e (or referred to as a second extension portion 13e). The extension portion 13e may extend from the electrode 13 toward the electrode 11 (eg, toward the Y-axis direction in FIG. 1B ).

延伸部13e可具有一部分位於絕緣層14及發熱體15之間。例如,延伸部13e可具有一部分接觸(例如直接接觸)絕緣層14及發熱體15。例如,延伸部13e可具有一部分延伸至發熱體15下方並具有一端部從發熱體15曝露出來。在一些實施例中,延伸部13e位於發熱體15下方的部分的寬度可不變或一致。例如,延伸部13e位於發熱體15下方的部分可為一矩形。延伸部13e的延伸方向可包括矩形的長邊。The extension portion 13e may have a portion located between the insulating layer 14 and the heating element 15. For example, the extension portion 13e may have a portion contacting (e.g., directly contacting) the insulating layer 14 and the heating element 15. For example, the extension portion 13e may have a portion extending below the heating element 15 and having an end exposed from the heating element 15. In some embodiments, the width of the portion of the extension portion 13e located below the heating element 15 may be constant or uniform. For example, the portion of the extension portion 13e located below the heating element 15 may be a rectangle. The extension direction of the extension portion 13e may include the long side of the rectangle.

在一些實施例中,延伸部11e與延伸部13e可朝相反方向延伸。在一些實施例中,延伸部11e與延伸部13e可位在發熱體15的相對的兩端或兩側。在一些實施例中,延伸部11e與延伸部13e可不具有從發熱體15曝露出來的一端。例如,延伸部11e與延伸部13e可延伸至發熱體15下方並且具有邊緣被發熱體15覆蓋或與發熱體15切齊。在一些實施例中,延伸部11e與延伸部13e可經配置以將發熱體15加熱。在一些實施例中,電極11及電極13可透過延伸部11e與延伸部13e將發熱體15加熱。In some embodiments, the extension portion 11e and the extension portion 13e may extend in opposite directions. In some embodiments, the extension portion 11e and the extension portion 13e may be located at opposite ends or sides of the heating element 15. In some embodiments, the extension portion 11e and the extension portion 13e may not have an end exposed from the heating element 15. For example, the extension portion 11e and the extension portion 13e may extend below the heating element 15 and have an edge covered by the heating element 15 or aligned with the heating element 15. In some embodiments, the extension portion 11e and the extension portion 13e may be configured to heat the heating element 15. In some embodiments, the electrode 11 and the electrode 13 may heat the heating element 15 through the extension portion 11e and the extension portion 13e.

在一些實施例中,電極11、電極12及電極13可分別包括(但不限於)銅(Cu)、金(Au)、銀(Ag)、鋁(Al)、鎳(Ni)、鈦(Ti)、鎢(W)、鉻(Cr)、錫(Sn)、或其他金屬或合金。在一些實施例中,例如在圖2J所示之製程步驟中,電極11、電極12及電極13上可塗佈有鎳/金(Ni/Au)、鎳/鉛/金(Ni/Pb/Au)、或鎳/鉛(Ni/Pb)等塗佈膜,以防止電極氧化,並避免額定電流值或額定電壓值因電極氧化而產生變動。如圖2J所示,延伸部11e與延伸部13e被絕緣層16覆蓋的部分未塗佈有塗佈膜。In some embodiments, the electrode 11, the electrode 12 and the electrode 13 may include (but not limited to) copper (Cu), gold (Au), silver (Ag), aluminum (Al), nickel (Ni), titanium (Ti), tungsten (W), chromium (Cr), tin (Sn), or other metals or alloys. In some embodiments, for example, in the process step shown in FIG. 2J, the electrode 11, the electrode 12 and the electrode 13 may be coated with a coating film such as nickel/gold (Ni/Au), nickel/lead/gold (Ni/Pb/Au), or nickel/lead (Ni/Pb) to prevent electrode oxidation and avoid changes in the rated current value or rated voltage value due to electrode oxidation. As shown in FIG. 2J , the portions of the extension portion 11e and the extension portion 13e covered by the insulating layer 16 are not coated with a coating film.

繼續參照圖1B,絕緣層14可位在基板10上方,並位在基板10與發熱體15之間。延伸部11e之一部分與延伸部13e之一部分可延伸至絕緣層14上方。1B , the insulating layer 14 may be located above the substrate 10 and between the substrate 10 and the heat generating element 15 . A portion of the extending portion 11e and a portion of the extending portion 13e may extend above the insulating layer 14 .

在一些實施例中,絕緣層14可包括(但不限於)環氧樹脂(包含分散其中的填料)、膜塑料、矽、或其他可適用於陶瓷、玻璃、樹脂等基板材料的材料。在一些實施例中,絕緣層14可具有耐熱性,例如可耐受可熔導體18熔斷時之熱。在一些實施例中,絕緣層14可將發熱體15與基板10隔開。在一些實施例中,絕緣層14可將電極11、電極12及電極13隔開,以避免發生微短路現象,並提高裝置穩定性。在一些實施例中,絕緣層14可阻隔或減少熱經由基板10逸散,確保電壓超過額定值時,發熱體15可被加熱而使可熔導體18即時熔斷,以保護電路,降低電子裝置的損害風險。In some embodiments, the insulating layer 14 may include (but not limited to) epoxy resin (including fillers dispersed therein), film plastic, silicon, or other materials applicable to substrate materials such as ceramics, glass, and resins. In some embodiments, the insulating layer 14 may have heat resistance, for example, it may withstand the heat when the fusible conductor 18 melts. In some embodiments, the insulating layer 14 may separate the heating element 15 from the substrate 10. In some embodiments, the insulating layer 14 may separate the electrodes 11, 12, and 13 to avoid micro short circuits and improve device stability. In some embodiments, the insulating layer 14 can block or reduce the heat dissipation through the substrate 10, ensuring that when the voltage exceeds the rated value, the heating element 15 can be heated to cause the fusible conductor 18 to melt immediately, thereby protecting the circuit and reducing the risk of damage to the electronic device.

發熱體15可位於絕緣層14的上方。發熱體15可接觸(例如直接接觸)絕緣層14。發熱體15可覆蓋延伸部11e的一部分與延伸部13e的一部分。發熱體15可包括可經通電而發熱的材料。在一些實施例中,發熱體15可包括(但不限於)鎢(W)、鉬(Mo)、釕(Ru)、鉻(Cr)、銀(Ag)、氧化釕(RuO或RuO 2)或其他金屬、合金或金屬氧化物。 The heat generating body 15 may be located above the insulating layer 14. The heat generating body 15 may contact (e.g., directly contact) the insulating layer 14. The heat generating body 15 may cover a portion of the extension portion 11e and a portion of the extension portion 13e. The heat generating body 15 may include a material that can generate heat when electricity is applied. In some embodiments, the heat generating body 15 may include (but is not limited to) tungsten (W), molybdenum (Mo), ruthenium (Ru), chromium (Cr), silver (Ag), ruthenium oxide (RuO or RuO 2 ) or other metals, alloys, or metal oxides.

圖1C所示為根據本揭露之部分實施例之保護元件之等效電路圖。在一些實施例中,圖1C為圖1A之保護元件1之等效電路圖。為簡潔之緣故,圖1B中僅描繪出電極11、電極12、電極13及可熔導體18。FIG1C is an equivalent circuit diagram of a protection element according to some embodiments of the present disclosure. In some embodiments, FIG1C is an equivalent circuit diagram of the protection element 1 of FIG1A. For the sake of simplicity, FIG1B only depicts the electrode 11, the electrode 12, the electrode 13 and the fusible conductor 18.

參照圖1B及圖1C,電極11、電極12、電極13分別具有與外部電路之電路基板電連接的端子或端點。電極13可透過延伸部13e、發熱體15及延伸部11e與電極11電連接。電極13與電極11之間可形成發熱體電阻,當電壓超過額定值時,可熔導體18可被發熱體電阻加熱而熔斷。在一些實施例中,可熔導體18可未直接電連接發熱體電阻。例如,可熔導體18可未直接接觸發熱體電阻。例如,可熔導體18可經由電極11而間接地連接發熱體電阻。Referring to FIG. 1B and FIG. 1C , electrode 11, electrode 12, and electrode 13 each have a terminal or end point electrically connected to a circuit substrate of an external circuit. Electrode 13 can be electrically connected to electrode 11 through extension portion 13e, heating element 15, and extension portion 11e. A heating element resistor can be formed between electrode 13 and electrode 11, and when the voltage exceeds a rated value, fusible conductor 18 can be heated and melted by the heating element resistor. In some embodiments, fusible conductor 18 may not be directly electrically connected to the heating element resistor. For example, fusible conductor 18 may not be directly in contact with the heating element resistor. For example, fusible conductor 18 may be indirectly connected to the heating element resistor via electrode 11.

圖1D及圖1E所示為根據本揭露之部分實施例之保護元件之側視圖。在一些實施例中,圖1D及圖1E分別為圖1A之保護元件1沿切線AA’及切線BB’切割的剖面圖。Figures 1D and 1E are side views of the protection element according to some embodiments of the present disclosure. In some embodiments, Figures 1D and 1E are cross-sectional views of the protection element 1 of Figure 1A cut along the tangent line AA' and the tangent line BB', respectively.

參照圖1D及圖1E,基板10具有表面101、與表面101相對的表面102、及延伸於表面101及表面102之間的表面103。在一些實施例中,通孔10v1、通孔10v2及通孔10v3可分別貫穿基板10。通孔10v1、通孔10v2及通孔10v3可分別延伸於表面101及表面102之間。通孔10v1、通孔10v2及通孔10v3可分別從表面101及表面102曝露出來。1D and 1E , the substrate 10 has a surface 101, a surface 102 opposite to the surface 101, and a surface 103 extending between the surface 101 and the surface 102. In some embodiments, the through hole 10v1, the through hole 10v2, and the through hole 10v3 may respectively penetrate the substrate 10. The through hole 10v1, the through hole 10v2, and the through hole 10v3 may respectively extend between the surface 101 and the surface 102. The through hole 10v1, the through hole 10v2, and the through hole 10v3 may respectively be exposed from the surface 101 and the surface 102.

電極11、電極12及電極13可設置於或位於基板10的表面101上。電極11可透過通孔10v1電連接至外部端子11b(或稱為第一外部端子11b)。電極12可透過通孔10v2電連接至外部端子12b(或稱為第二外部端子12b)。電極13可透過通孔10v3電連接至外部端子13b(或稱為第三外部端子13b)。外部端子11b、外部端子12b及外部端子13b可位於基板10的表面102上。外部端子11b、外部端子12b及外部端子13b可做為與外部電路之電路基板電連接的端子或端點。Electrode 11, electrode 12 and electrode 13 may be disposed or located on surface 101 of substrate 10. Electrode 11 may be electrically connected to external terminal 11b (or referred to as first external terminal 11b) through through hole 10v1. Electrode 12 may be electrically connected to external terminal 12b (or referred to as second external terminal 12b) through through hole 10v2. Electrode 13 may be electrically connected to external terminal 13b (or referred to as third external terminal 13b) through through hole 10v3. External terminal 11b, external terminal 12b and external terminal 13b may be located on surface 102 of substrate 10. External terminal 11b, external terminal 12b and external terminal 13b may serve as a terminal or end point electrically connected to a circuit substrate of an external circuit.

絕緣層14可設置於或位於基板10的表面101上。絕緣層14可位於電極11及電極12之間。絕緣層14可具有相對的兩端分別被電極11及電極12覆蓋。延伸部11e與延伸部13e可設置於或位於絕緣層14上。延伸部11e與延伸部13e可被發熱體15覆蓋並與發熱體15接觸。The insulating layer 14 may be disposed on or located on the surface 101 of the substrate 10. The insulating layer 14 may be located between the electrode 11 and the electrode 12. The insulating layer 14 may have two opposite ends respectively covered by the electrode 11 and the electrode 12. The extension portion 11e and the extension portion 13e may be disposed on or located on the insulating layer 14. The extension portion 11e and the extension portion 13e may be covered by and in contact with the heat generating body 15.

在一些實施例中,延伸部11e可具有一側面與發熱體15的側面共面(coplanar)。延伸部11e的側面可與絕緣層16接觸或被絕緣層16覆蓋。在一些實施例中,延伸部11e可具有一底面與發熱體15的底面共面。延伸部11e的底面與發熱體15的底面可接觸絕緣層14的頂面。In some embodiments, the extension portion 11e may have a side surface coplanar with the side surface of the heating element 15. The side surface of the extension portion 11e may contact with or be covered by the insulating layer 16. In some embodiments, the extension portion 11e may have a bottom surface coplanar with the bottom surface of the heating element 15. The bottom surface of the extension portion 11e and the bottom surface of the heating element 15 may contact the top surface of the insulating layer 14.

在一些實施例中,延伸部13e可具有一側面與發熱體15的側面共面。延伸部13e的側面可與絕緣層16接觸或被絕緣層16覆蓋。在一些實施例中,延伸部13e可具有一底面與發熱體15的底面共面。延伸部13e的底面與發熱體15的底面可接觸絕緣層14的頂面。In some embodiments, the extension portion 13e may have a side surface coplanar with the side surface of the heating element 15. The side surface of the extension portion 13e may contact with or be covered by the insulating layer 16. In some embodiments, the extension portion 13e may have a bottom surface coplanar with the bottom surface of the heating element 15. The bottom surface of the extension portion 13e and the bottom surface of the heating element 15 may contact the top surface of the insulating layer 14.

絕緣層16可設置於或位於絕緣層14上並覆蓋發熱體15。例如,發熱體15可被包圍在絕緣層14與絕緣層16內。在一些實施例中,絕緣層16可將發熱體15與可熔導體18隔開。在一些實施例中,絕緣層16可接觸或覆蓋電極11的一邊緣及電極12的一邊緣。在一些實施例中,絕緣層16可包括(但不限於)上述針對絕緣層14所列舉的材料,在此不再贅述。The insulating layer 16 may be disposed on or located on the insulating layer 14 and cover the heating element 15. For example, the heating element 15 may be enclosed by the insulating layer 14 and the insulating layer 16. In some embodiments, the insulating layer 16 may separate the heating element 15 from the fusible conductor 18. In some embodiments, the insulating layer 16 may contact or cover one edge of the electrode 11 and one edge of the electrode 12. In some embodiments, the insulating layer 16 may include (but is not limited to) the materials listed above for the insulating layer 14, which will not be repeated here.

可熔導體18可連接在電極11及電極12之間。在一些實施例中,可熔導體18與電極11的接觸面積大致上等於可熔導體18與電極12的接觸面積。The fusible conductor 18 may be connected between the electrode 11 and the electrode 12. In some embodiments, the contact area between the fusible conductor 18 and the electrode 11 is substantially equal to the contact area between the fusible conductor 18 and the electrode 12.

在一些實施例中,如圖1D所示,在Z軸方向(或垂直於基板10的表面101的方向)上,發熱體15可具有一部分位於可熔導體18與延伸部11e之間。發熱體15可具有一部分位於可熔導體18與延伸部13e之間。在一些實施例中,如圖1D所示,在Z軸方向(或垂直於基板10的表面101的方向)上,發熱體15與可熔導體18之間可不包含其他的傳導層或傳導件。In some embodiments, as shown in FIG. 1D , in the Z-axis direction (or the direction perpendicular to the surface 101 of the substrate 10), the heating element 15 may have a portion located between the fusible conductor 18 and the extension portion 11e. The heating element 15 may have a portion located between the fusible conductor 18 and the extension portion 13e. In some embodiments, as shown in FIG. 1D , in the Z-axis direction (or the direction perpendicular to the surface 101 of the substrate 10), no other conductive layer or conductive member may be included between the heating element 15 and the fusible conductor 18.

在一些實施例中,可熔導體18可包括(但不限於)銅(Cu)、錫(Sn)、鉍(Bi)、銀(Ag)、或其他金屬或合金。在一些實施例中,可熔導體18可經配置以藉由發熱體15之發熱而熔斷。在一些實施例中,可熔導體18可包括複數個金屬層,例如可包括一層銅金屬層及一層錫金屬層。在一些實施例中,可熔導體18可包括單一金屬層或單一金屬塊。在一些實施例中,可熔導體18可包括單一合金層或單一合金塊。在一些實施例中,可熔導體18可包括單一熔點金屬層或單一熔點金屬塊。在一些實施例中,可熔導體18中銅的重量百分比可為50%、60%、70%、80%、90%或更高。在一些實施例中,可熔導體18可包括純銅。例如,可熔導體18之銅可直接接觸電極11及電極12。In some embodiments, the fusible conductor 18 may include (but not limited to) copper (Cu), tin (Sn), bismuth (Bi), silver (Ag), or other metals or alloys. In some embodiments, the fusible conductor 18 may be configured to be melted by the heat generated by the heating element 15. In some embodiments, the fusible conductor 18 may include a plurality of metal layers, for example, a copper metal layer and a tin metal layer. In some embodiments, the fusible conductor 18 may include a single metal layer or a single metal block. In some embodiments, the fusible conductor 18 may include a single alloy layer or a single alloy block. In some embodiments, the fusible conductor 18 may include a single melting point metal layer or a single melting point metal block. In some embodiments, the weight percentage of copper in the fusible conductor 18 may be 50%, 60%, 70%, 80%, 90% or more. In some embodiments, the fusible conductor 18 may include pure copper. For example, the copper of the fusible conductor 18 may directly contact the electrodes 11 and 12.

防焊層17a(或稱為第一防焊層17a)及防焊層17b(或稱為第二防焊層17b)可設置於或位於絕緣層16與可熔導體18之間。防焊層17a及防焊層17b可設置於或位於可熔導體18下方。防焊層17a及防焊層17b可接觸(例如直接接觸)可熔導體18。防焊層17a及防焊層17b可被可熔導體18覆蓋。防焊層17a可設置成鄰近電極11。防焊層17b可設置成鄰近電極12。在一些實施例中,防焊層17a及防焊層17b可彼此分離或間隔開。The solder mask 17a (or first solder mask 17a) and the solder mask 17b (or second solder mask 17b) may be disposed or located between the insulating layer 16 and the fusible conductor 18. The solder mask 17a and the solder mask 17b may be disposed or located below the fusible conductor 18. The solder mask 17a and the solder mask 17b may contact (e.g., directly contact) the fusible conductor 18. The solder mask 17a and the solder mask 17b may be covered by the fusible conductor 18. The solder mask 17a may be disposed adjacent to the electrode 11. The solder mask 17b may be disposed adjacent to the electrode 12. In some embodiments, the solder mask layer 17a and the solder mask layer 17b may be separated or spaced apart from each other.

在一些實施例中,如圖1D所示,在Z軸方向(或垂直於基板10的表面101的方向)上,防焊層17a與延伸部13e可不重疊。然而在其他實施例中,防焊層17a與延伸部13e可至少部分重疊。In some embodiments, as shown in FIG. 1D , the solder mask layer 17 a and the extension portion 13 e may not overlap in the Z-axis direction (or a direction perpendicular to the surface 101 of the substrate 10 ). However, in other embodiments, the solder mask layer 17 a and the extension portion 13 e may at least partially overlap.

在一些實施例中,防焊層17a及防焊層17b可具有長條矩形的形狀。例如圖1A所示,防焊層17a及防焊層17b在Y軸方向上延伸。在一些實施例中,防焊層17a及防焊層17b可延伸超過可熔導體18的一邊。例如,防焊層17a的兩端可從可熔導體18曝露出來。例如,防焊層17b的兩端可從可熔導體18曝露出來。In some embodiments, the solder mask 17a and the solder mask 17b may have a rectangular shape. For example, as shown in FIG. 1A , the solder mask 17a and the solder mask 17b extend in the Y-axis direction. In some embodiments, the solder mask 17a and the solder mask 17b may extend beyond one side of the fusible conductor 18. For example, both ends of the solder mask 17a may be exposed from the fusible conductor 18. For example, both ends of the solder mask 17b may be exposed from the fusible conductor 18.

在一些實施例中,防焊層17a及防焊層17b可經配置以將熔融的可熔導體18分段或分離,確實地遮斷電路,而使可熔導體18的熔斷特性更為穩定。例如,防焊層17a及防焊層17b可將可熔導體18分成三段。在其他實施例中,可僅具有一個防焊層,例如僅具有防焊層17a或防焊層17b,可將可熔導體18分成兩段。在其他實施例中,可僅具有一個防焊層鄰近於電極11、鄰近於電極12、或與電極11及電極12大致上等距離。在其他實施例中,可僅具有一個防焊層,其中心線可與可熔導體18的中心線大致上對齊。In some embodiments, the solder mask 17a and the solder mask 17b can be configured to segment or separate the molten fusible conductor 18, effectively interrupt the circuit, and make the fusing characteristics of the fusible conductor 18 more stable. For example, the solder mask 17a and the solder mask 17b can divide the fusible conductor 18 into three sections. In other embodiments, there may be only one solder mask, for example, only the solder mask 17a or the solder mask 17b can divide the fusible conductor 18 into two sections. In other embodiments, there may be only one solder mask adjacent to the electrode 11, adjacent to the electrode 12, or substantially equidistant from the electrode 11 and the electrode 12. In other embodiments, there may be only one solder mask layer, whose centerline may be substantially aligned with the centerline of the fusible conductor 18.

在一些實施例中,由於可熔導體18可具有單一熔點,防焊層17a及防焊層17b可同時將可熔導體18分成三段。例如,電極11與電極12可同時與可熔導體18形成斷路。In some embodiments, since the fusible conductor 18 may have a single melting point, the solder resist layer 17a and the solder resist layer 17b may simultaneously divide the fusible conductor 18 into three sections. For example, the electrode 11 and the electrode 12 may simultaneously form a short circuit with the fusible conductor 18.

在一些實施例中,防焊層17a及防焊層17b可分別包括(但不限於)環氧樹脂(epoxy)、胺甲酸乙酯(urethane)、丙烯酸(acrylic)、有機與無機填料、光引發劑(photoinitiator)等材料。In some embodiments, the solder mask layer 17 a and the solder mask layer 17 b may include (but not limited to) materials such as epoxy, urethane, acrylic, organic and inorganic fillers, and photoinitiators.

蓋部19可設置於或位於基板10的表面101上。在一些實施例中,從圖1D及圖1E之側視圖觀看時,蓋部19的中間部位可較其周圍部位薄。在一些實施例中,從圖1D及圖1E之側視圖觀看時,蓋部19的中間部位可具有大致上平坦的內側表面。在一些實施例中,從圖1D及圖1E之側視圖觀看時,蓋部19可具有大致上平坦的上表面。The cover 19 may be disposed or located on the surface 101 of the substrate 10. In some embodiments, when viewed from the side view of FIG. 1D and FIG. 1E, the middle portion of the cover 19 may be thinner than the surrounding portion thereof. In some embodiments, when viewed from the side view of FIG. 1D and FIG. 1E, the middle portion of the cover 19 may have a substantially flat inner surface. In some embodiments, when viewed from the side view of FIG. 1D and FIG. 1E, the cover 19 may have a substantially flat upper surface.

圖2A至圖2M所示為根據本揭露之部分實施例之保護元件之製造方法。根據本揭露之部分實施例,圖2A至圖2M所揭露之製造方法可用以製造如圖1A所示之保護元件1。2A to 2M show a manufacturing method of a protection element according to some embodiments of the present disclosure. According to some embodiments of the present disclosure, the manufacturing method disclosed in FIG. 2A to 2M can be used to manufacture the protection element 1 shown in FIG. 1A.

參照圖2A,提供基板10。基板10具有表面101及與表面101相對的表面102。在一些實施例中,可以雷射切割的方式在基板10中形成切割道(未圖示)。在一些實施例中,切割道之深度可占基板10之厚度約20%至約60%的比例。2A , a substrate 10 is provided. The substrate 10 has a surface 101 and a surface 102 opposite to the surface 101. In some embodiments, a cutting path (not shown) can be formed in the substrate 10 by laser cutting. In some embodiments, the depth of the cutting path can account for a ratio of about 20% to about 60% of the thickness of the substrate 10.

參照圖2B,於基板10中形成鑽孔10h。在一些實施例中,鑽孔10h可藉由雷射鑽孔或其他可行的方式而形成。可依裝置規格(例如額定電流大小)或製程要求而設計鑽孔10h的大小、數量及位置。2B , a drill hole 10h is formed in the substrate 10. In some embodiments, the drill hole 10h can be formed by laser drilling or other feasible methods. The size, number and position of the drill hole 10h can be designed according to device specifications (such as rated current size) or process requirements.

參照圖2C,形成通孔10v1、通孔10v2及通孔10v3。在一些實施例中,可在鑽孔10h中透過濺射、無電電鍍(electroless plating)、電鍍(plating)、印刷(printing)、黃光微影(photolithography)或其他可行的方式形成導電材料。2C, through holes 10v1, 10v2 and 10v3 are formed. In some embodiments, a conductive material may be formed in the drill hole 10h by sputtering, electroless plating, plating, printing, photolithography or other feasible methods.

參照圖2D,表面102朝上,在基板10之表面102上形成外部端子11b、外部端子12b及外部端子13b。在一些實施例中,外部端子11b、外部端子12b及外部端子13b可藉由濺射、無電電鍍、電鍍、印刷、黃光微影或其他可行的方式而形成。外部端子11b、外部端子12b及外部端子13b的位置係對應於通孔10v1、通孔10v2及通孔10v3的位置。Referring to FIG. 2D , with the surface 102 facing upward, external terminals 11b, 12b, and 13b are formed on the surface 102 of the substrate 10. In some embodiments, the external terminals 11b, 12b, and 13b can be formed by sputtering, electroless plating, electroplating, printing, photolithography, or other feasible methods. The positions of the external terminals 11b, 12b, and 13b correspond to the positions of the through holes 10v1, 10v2, and 10v3.

參照圖2E,表面101朝上,在基板10的表面101上形成絕緣層14。在一些實施例中,絕緣層14可透過塗佈(coating)、層壓(lamination) 或其他可行的方式而形成。2E , the surface 101 faces upward, and an insulating layer 14 is formed on the surface 101 of the substrate 10. In some embodiments, the insulating layer 14 can be formed by coating, lamination or other feasible methods.

參照圖2F,在基板10的表面101及絕緣層14上形成電極11、電極12及電極13。在一些實施例中,電極11、電極12及電極13可藉由濺射、無電電鍍、電鍍、印刷、黃光微影或其他可行的方式而形成。電極11可具有延伸部11e且電極13可具有延伸部13e。在其他實施例中,可在基板10的表面101及絕緣層14上保型地(comformally)形成傳導層,再經由雷射蝕刻、乾式蝕刻(dry etching)、離子撞擊(ion bumping)、或其他可行的方式移除部分的傳導層或圖案化傳導層。Referring to FIG. 2F , electrodes 11, 12, and 13 are formed on the surface 101 of the substrate 10 and the insulating layer 14. In some embodiments, the electrodes 11, 12, and 13 may be formed by sputtering, electroless plating, electroplating, printing, photolithography, or other feasible methods. The electrode 11 may have an extension 11e and the electrode 13 may have an extension 13e. In other embodiments, a conductive layer may be conformally formed on the surface 101 of the substrate 10 and the insulating layer 14, and then a portion of the conductive layer may be removed or the conductive layer may be patterned by laser etching, dry etching, ion bumping, or other feasible methods.

參照圖2G,在絕緣層14、延伸部11e及延伸部13e上形成發熱體15。在一些實施例中,發熱體15可透過電鍍、蒸鍍、濺鍍而形成。在一些實施例中,發熱體15可經由將金屬(例如釕(Ru))之粉末與黏合劑(例如樹脂)混合,並透過網版印形成圖案後燒結而成。在其他實施例中,發熱體15可透過貼附金屬薄膜而形成。Referring to FIG. 2G , a heating element 15 is formed on the insulating layer 14, the extension 11e, and the extension 13e. In some embodiments, the heating element 15 can be formed by electroplating, evaporation, or sputtering. In some embodiments, the heating element 15 can be formed by mixing a metal (e.g., ruthenium (Ru)) powder with a binder (e.g., resin), forming a pattern by screen printing, and then sintering. In other embodiments, the heating element 15 can be formed by attaching a metal film.

參照圖2H,在發熱體15上形成絕緣層16。在一些實施例中,絕緣層16可透過塗佈、層壓或其他可行的方式而形成。2H , an insulating layer 16 is formed on the heat generating body 15. In some embodiments, the insulating layer 16 can be formed by coating, lamination or other feasible methods.

參照圖2I,在絕緣層16上形成防焊層17a及17b。在一些實施例中,防焊層17a及17b可透過塗佈、印刷、黃光微影或其他可行的方式而形成。2I , solder resist layers 17a and 17b are formed on the insulating layer 16. In some embodiments, the solder resist layers 17a and 17b may be formed by coating, printing, photolithography or other feasible methods.

參照圖2J及2K,在電極11、電極12、電極13、外部端子11b、外部端子12b及外部端子13b上形成塗佈膜11p。在一些實施例中,塗佈膜11p可透過塗佈鎳/金(Ni/Au)、鎳/鉛/金(Ni/Pb/Au)、或鎳/鉛(Ni/Pb)等金屬而形成。延伸部11e與延伸部13e被絕緣層16覆蓋的部分未塗佈有塗佈膜11p。2J and 2K , a coating film 11p is formed on the electrode 11, the electrode 12, the electrode 13, the external terminal 11b, the external terminal 12b, and the external terminal 13b. In some embodiments, the coating film 11p can be formed by coating a metal such as nickel/gold (Ni/Au), nickel/lead/gold (Ni/Pb/Au), or nickel/lead (Ni/Pb). The portions of the extension 11e and the extension 13e covered by the insulating layer 16 are not coated with the coating film 11p.

參照圖2L,在電極11及電極12上形成可熔導體18。在一些實施例中,可熔導體18可藉由濺射、無電電鍍、電鍍、印刷、黃光微影或其他可行的方式而形成。在其他實施例中,可熔導體18可透過貼附金屬片或薄膜(例如銅合金屬片或純銅金屬片)而形成。2L , a fusible conductor 18 is formed on the electrode 11 and the electrode 12. In some embodiments, the fusible conductor 18 can be formed by sputtering, electroless plating, electroplating, printing, photolithography or other feasible methods. In other embodiments, the fusible conductor 18 can be formed by attaching a metal sheet or film (such as a copper alloy sheet or a pure copper metal sheet).

參照圖2M,形成蓋體19。在一些實施例中,可將基板10沿著經由雷射劃線而形成的切割道而分離成複數個獨立的元件,以露出基板10之側表面(例如圖1A所示之表面103)。在一些實施例中,透過圖2A至圖2M所示方法而形成的過電流保護裝置可與圖1A所示之保護元件1相同。Referring to FIG. 2M , a cover 19 is formed. In some embodiments, the substrate 10 may be separated into a plurality of independent components along the cutting paths formed by laser scribing to expose the side surface of the substrate 10 (e.g., the surface 103 shown in FIG. 1A ). In some embodiments, the overcurrent protection device formed by the method shown in FIG. 2A to FIG. 2M may be the same as the protection component 1 shown in FIG. 1A .

將瞭解,本文討論之方法及裝置之實施例在應用中不限於在下列描述中提出或在隨附圖式中繪示之組件之構造及配置之細節。方法及裝置能夠實現於其他實施例中且可以各種方式實踐或執行。特定實施方案之實例在本文中僅用於繪示之目的而提供且不意在限制。特定言之,結合任何一或多項實施例討論之動作、元件及特徵不意在從任何其他實施例中之一類似角色排除。It will be understood that the embodiments of the methods and apparatus discussed herein are not limited in application to the details of construction and arrangement of components set forth in the following description or illustrated in the accompanying drawings. The methods and apparatus can be implemented in other embodiments and may be practiced or performed in a variety of ways. Examples of specific embodiments are provided herein for illustrative purposes only and are not intended to be limiting. In particular, actions, elements, and features discussed in conjunction with any one or more embodiments are not intended to be excluded from a similar role in any other embodiment.

而且,在本文中使用之措辭及術語出於描述之目的且不應視為限制。對以單數形式指涉之本文之系統及方法之實施例或元件或動作之任何參考亦可包括包含複數個此等元件之實施例,且以複數形式對本文之任何實施例或元件或動作之任何參考亦可包括僅包含一單一元件之實施例。單數形式或複數形式之參考不意在限制當前所揭示之系統或方法、其等組件、動作或元件。本文中「包含」、「包括」、「具有」、「含有」、「涉及」及其等之變形之使用意欲涵蓋在其後列出之項目及其等之等效物以及額外項目。對「或」之參考可視為包含性的使得使用「或」之任何項可指示所描述之項之一單一、一個以上及所有之任一者。對前部及後部、左側及右側、頂部及底部、上部及下部及垂直及水平之任何參考意在為方便描述,而不將本系統及方法或其等組件限於任何一個位置或空間定向。Furthermore, the words and terms used herein are for descriptive purposes and should not be construed as limiting. Any reference to an embodiment or element or action of the systems and methods herein referred to in the singular may also include embodiments that include a plurality of such elements, and any reference to any embodiment or element or action herein in the plural may also include embodiments that include only a single element. References in the singular or plural are not intended to limit the presently disclosed systems or methods, their components, actions, or elements. The use of "comprising," "including," "having," "containing," "involving," and variations thereof herein is intended to encompass the items listed thereafter and their equivalents as well as additional items. References to "or" may be construed as inclusive such that any term using "or" may indicate any of a single, more than one, and all of the items described. Any references to front and back, left and right, top and bottom, upper and lower, and vertical and horizontal are intended for convenience of description and do not limit the present systems and methods or their components to any one positional or spatial orientation.

因此,在已描述至少一項實施例之若干態樣之情況下,應瞭解,熟習此項技術者容易想到各種更改、修改及改良。此等更改、修改及改良意在係本發明之部分且意在處於本發明之範疇內。因此,以上描述及圖式僅係藉由實例,且應從隨附申請專利範圍及其等之等效物之正確建構來判定本發明之範疇。Thus, having described several aspects of at least one embodiment, it should be understood that various changes, modifications, and improvements will readily occur to those skilled in the art. Such changes, modifications, and improvements are intended to be part of the present invention and are intended to be within the scope of the present invention. Therefore, the above description and drawings are by way of example only, and the scope of the present invention should be determined from the correct construction of the appended claims and their equivalents.

1:保護元件 10:基板 10v1:通孔/第一通孔 10v2:通孔/第二通孔 10v3:通孔/第三通孔 11:電極/第一電極 11b:外部端子/第一外部端子 11e:延伸部/第一延伸部 11p:塗佈膜 12:電極/第二電極 12b:外部端子/第二外部端子 13:電極/第三電極 13b:外部端子/第三外部端子 13e:延伸部/第二延伸部 14:絕緣層/第一絕緣層 15:發熱體 16:絕緣層/第二絕緣層 17a:防焊層/第一防焊層 17b:防焊層/第二防焊層 18:可熔導體 19:蓋體 101:表面 102:表面 103:表面 AA’:切線 BB’:切線 X:軸 Y:軸 Z:軸 1: Protective element 10: Substrate 10v1: Through hole/first through hole 10v2: Through hole/second through hole 10v3: Through hole/third through hole 11: Electrode/first electrode 11b: External terminal/first external terminal 11e: Extension/first extension 11p: Coating film 12: Electrode/second electrode 12b: External terminal/second external terminal 13: Electrode/third electrode 13b: External terminal/third external terminal 13e: Extension/second extension 14: Insulation layer/first insulation layer 15: Heat generating element 16: Insulation layer/second insulation layer 17a: Solder resist/first solder resist 17b: solder mask/second solder mask 18: fusible conductor 19: cover 101: surface 102: surface 103: surface AA’: tangent BB’: tangent X: axis Y: axis Z: axis

在下文中參考隨附圖式討論至少一項實施例之各種態樣,該等圖式並不意在按比例繪製。在圖、實施方式或任何請求項中之技術特徵伴隨元件符號之處,已出於增大圖、實施方式或申請專利範圍中之可理解性之唯一目的而包含該等元件符號。因此,元件符號之存在與否皆不意在具有對任何申請專利範圍元素之範疇之限制效應。在圖中,在各種圖中繪示之各相同或幾乎相同之組件藉由一相同數字表示。為清晰起見,並非每一組件皆在每一圖中標記。該等圖出於繪示及解釋之目的提供且不視為本發明之限制之一定義。在圖中:Various aspects of at least one embodiment are discussed below with reference to the accompanying drawings, which are not intended to be drawn to scale. Where technical features in a figure, embodiment, or any claim are accompanied by element symbols, such element symbols have been included for the sole purpose of increasing the understandability of the figure, embodiment, or patent scope. Therefore, the presence or absence of element symbols is not intended to have a limiting effect on the scope of any patent scope element. In the figures, each identical or nearly identical component shown in various figures is represented by an identical number. For clarity, not every component is labeled in every figure. These figures are provided for the purpose of illustration and explanation and are not to be regarded as a definition of limitations of the present invention. In the figures:

圖1A所示為根據本揭露之部分實施例之保護元件之立體圖;FIG. 1A is a perspective view of a protection element according to some embodiments of the present disclosure;

圖1B所示為根據本揭露之部分實施例之保護元件之俯視圖;FIG. 1B is a top view of a protection element according to some embodiments of the present disclosure;

圖1C所示為根據本揭露之部分實施例之保護元件之等效電路圖;FIG. 1C is an equivalent circuit diagram of a protection element according to some embodiments of the present disclosure;

圖1D所示為根據本揭露之部分實施例之保護元件之側視圖;FIG. 1D is a side view of a protection element according to some embodiments of the present disclosure;

圖1E所示為根據本揭露之部分實施例之保護元件之側視圖;及FIG. 1E is a side view of a protective element according to some embodiments of the present disclosure; and

圖2A至圖2M所示為根據本揭露之部分實施例之保護元件之製造方法。2A to 2M show a method for manufacturing a protection element according to some embodiments of the present disclosure.

1:保護元件 10:基板 11:電極/第一電極 11e:延伸部/第一延伸部 12:電極/第二電極 13:電極/第三電極 14:絕緣層/第一絕緣層 16:絕緣層/第二絕緣層 17a:防焊層/第一防焊層 17b:防焊層/第二防焊層 18:可熔導體 19:蓋體 AA’:切線 BB’:切線 X:軸 Y:軸 Z:軸 1: Protective element 10: Substrate 11: Electrode/First electrode 11e: Extension/First extension 12: Electrode/Second electrode 13: Electrode/Third electrode 14: Insulation layer/First insulation layer 16: Insulation layer/Second insulation layer 17a: Solder mask/First solder mask 17b: Solder mask/Second solder mask 18: Fusible conductor 19: Cover AA’: Tangent BB’: Tangent X: Axis Y: Axis Z: Axis

Claims (12)

一種保護元件,包含:一基板;一第一電極,其設置於該基板上並具有一第一延伸部;一第二電極,其設置於該基板上並與該第一電極間隔開;一發熱體,其設置於該第一電極與該第二電極之間;一可熔導體,連接在該第一電極及該第二電極之間,其經配置以藉由該發熱體之發熱而熔斷;一第一絕緣層,其設置於該發熱體與該基板之間;及一第二絕緣層,其設置於該發熱體與該可熔導體之間,其中該第一電極的該第一延伸部具有至少一部分位於該發熱體與該基板之間並接觸該發熱體,且其中該第一電極具有一邊緣位於該第一絕緣層與該第二絕緣層之間。 A protective element comprises: a substrate; a first electrode disposed on the substrate and having a first extension portion; a second electrode disposed on the substrate and spaced apart from the first electrode; a heating element disposed between the first electrode and the second electrode; a fusible conductor connected between the first electrode and the second electrode and configured to be fusible by heat generated by the heating element. and melted; a first insulating layer disposed between the heating element and the substrate; and a second insulating layer disposed between the heating element and the fusible conductor, wherein the first extension portion of the first electrode has at least a portion located between the heating element and the substrate and in contact with the heating element, and wherein the first electrode has an edge located between the first insulating layer and the second insulating layer. 如請求項1所述之保護元件,其中該第一電極經由貫穿該基板之一第一通孔連接到一第一外部端子,且該第二電極經由貫穿該基板之一第二通孔連接到一第二外部端子。 A protection element as described in claim 1, wherein the first electrode is connected to a first external terminal via a first through hole penetrating the substrate, and the second electrode is connected to a second external terminal via a second through hole penetrating the substrate. 如請求項1所述之保護元件,更包括:一第一防焊層,其設置於該第二絕緣層與該可熔導體之間並接觸該可熔導體。 The protective element as described in claim 1 further includes: a first solder resist layer disposed between the second insulating layer and the fusible conductor and in contact with the fusible conductor. 如請求項3所述之保護元件,更包括:一第二防焊層,其設置於該第二絕緣層與該可熔導體之間並接觸該可熔導體,其中該第一防焊層與該第二防焊層分隔開。 The protection element as described in claim 3 further includes: a second solder mask layer, which is disposed between the second insulating layer and the fusible conductor and contacts the fusible conductor, wherein the first solder mask layer is separated from the second solder mask layer. 如請求項1所述之保護元件,更包括:一第三電極,其設置於該基板上並具有一第二延伸部,其中該第三電極的該第二延伸部具有至少一部分位於該發熱體與該基板之間並接觸該發熱體。 The protection element as described in claim 1 further includes: a third electrode, which is disposed on the substrate and has a second extension portion, wherein at least a portion of the second extension portion of the third electrode is located between the heating element and the substrate and contacts the heating element. 如請求項5所述之保護元件,其中該第一延伸部的一延伸方向及該第二延伸部的一延伸方向相反。 A protective element as described in claim 5, wherein an extension direction of the first extension portion and an extension direction of the second extension portion are opposite. 如請求項5所述之保護元件,其中該第一電極及該第三電極經配置以加熱該發熱體。 A protection element as described in claim 5, wherein the first electrode and the third electrode are configured to heat the heating element. 如請求項1所述之保護元件,其中該第一延伸部具有一側面與該發熱體之一側面共平面。 A protective element as described in claim 1, wherein the first extension portion has a side surface coplanar with a side surface of the heating element. 一種保護元件之製造方法,包含:提供一基板;在該基板上形成一第一電極,其中該第一電極具有一第一延伸部; 在該基板上形成一第二電極與該第一電極間隔開;於該第一電極與該第二電極之間形成一發熱體;形成一可熔導體連接於該第一電極與該第二電極之間,其中該可熔導體經配置以藉由該發熱體之發熱而熔斷;於該發熱體與該基板之間形成一第一絕緣層;及於該發熱體與該可熔導體之間形成一第二絕緣層,其中該第一電極的該第一延伸部具有至少一部分位於該發熱體與該基板之間並接觸該發熱體,且其中該第一電極具有一邊緣位於該第一絕緣層與該第二絕緣層之間。 A method for manufacturing a protective element, comprising: providing a substrate; forming a first electrode on the substrate, wherein the first electrode has a first extension portion; forming a second electrode on the substrate and spaced apart from the first electrode; forming a heating element between the first electrode and the second electrode; forming a fusible conductor connected between the first electrode and the second electrode, wherein the fusible conductor is configured to The heat source is heated and melted; a first insulating layer is formed between the heat source and the substrate; and a second insulating layer is formed between the heat source and the fusible conductor, wherein the first extension of the first electrode has at least a portion located between the heat source and the substrate and in contact with the heat source, and wherein the first electrode has an edge located between the first insulating layer and the second insulating layer. 如請求項9所述之製造方法,進一步包括:形成貫穿該基板之一第一通孔、一第二通孔及一第三通孔。 The manufacturing method as described in claim 9 further includes: forming a first through hole, a second through hole and a third through hole penetrating the substrate. 如請求項9所述之製造方法,進一步包括:在該基板上形成一第三電極,其中該第三電極具有一第二延伸部,且該第二延伸部具有至少一部分位於該發熱體與該基板之間並接觸該發熱體。 The manufacturing method as described in claim 9 further includes: forming a third electrode on the substrate, wherein the third electrode has a second extension portion, and the second extension portion has at least a portion located between the heating element and the substrate and in contact with the heating element. 如請求項9所述之製造方法,進一步包括:形成一防焊層於該第二絕緣層上,其中該可熔導體接觸該防焊層。 The manufacturing method as described in claim 9 further includes: forming a solder mask layer on the second insulating layer, wherein the fusible conductor contacts the solder mask layer.
TW111125683A 2022-07-08 2022-07-08 Protection element and method of manufacturing the same TWI842008B (en)

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI456618B (en) * 2010-11-09 2014-10-11 Cyntec Co Ltd Protective device
TWI456617B (en) * 2010-05-14 2014-10-11 Cyntec Co Ltd Protective device and electronic device
TW202046362A (en) * 2019-04-10 2020-12-16 日商迪睿合股份有限公司 Protection element and battery pack
TWI726074B (en) * 2016-03-23 2021-05-01 日商迪睿合股份有限公司 Breaking protective element
TWM635306U (en) * 2022-07-08 2022-12-11 大毅科技股份有限公司 Protection element

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI456617B (en) * 2010-05-14 2014-10-11 Cyntec Co Ltd Protective device and electronic device
TWI456618B (en) * 2010-11-09 2014-10-11 Cyntec Co Ltd Protective device
TWI726074B (en) * 2016-03-23 2021-05-01 日商迪睿合股份有限公司 Breaking protective element
TW202046362A (en) * 2019-04-10 2020-12-16 日商迪睿合股份有限公司 Protection element and battery pack
TWM635306U (en) * 2022-07-08 2022-12-11 大毅科技股份有限公司 Protection element

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