TWI841907B - Polishing pad, method for manufacturing polishing pad and polishing apparatus - Google Patents

Polishing pad, method for manufacturing polishing pad and polishing apparatus Download PDF

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TWI841907B
TWI841907B TW111101869A TW111101869A TWI841907B TW I841907 B TWI841907 B TW I841907B TW 111101869 A TW111101869 A TW 111101869A TW 111101869 A TW111101869 A TW 111101869A TW I841907 B TWI841907 B TW I841907B
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polishing
layer
polishing pad
foaming
holes
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TW111101869A
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Chinese (zh)
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TW202330742A (en
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姚伊蓬
洪永璋
洪賢章
王良光
宋欣如
吳政毅
黃啟哲
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貝達先進材料股份有限公司
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Priority to TW111101869A priority Critical patent/TWI841907B/en
Priority to US18/152,163 priority patent/US20230226661A1/en
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Abstract

The present invention relates to a polishing pad including a polishing layer. The polishing layer includes a plurality of foaming pores, and a diameter of each of the foaming pores is 1 μm to 10 μm. The invention also relates to a method for manufacturing a polishing pad and a polishing apparatus.

Description

研磨墊、製造研磨墊之方法及研磨裝置Polishing pad, method for manufacturing polishing pad, and polishing device

本發明係關於一種具有微小孔洞之研磨墊、製造研磨墊之方法及研磨裝置。The present invention relates to a polishing pad with micro holes, a method for manufacturing the polishing pad and a polishing device.

研磨一般係指化學機械研磨(chemical-mechanical polishing, CMP)製程中,對於初為粗糙表面的磨耗控制,其係利用含研磨粒子的研磨漿液平均分散於一研磨墊之上表面,同時將一待研磨基材抵住該研磨墊後以重覆規律動作搓磨。該待研磨基材係諸如半導體、儲存媒體基材、積體電路、液晶顯示器平板玻璃、光學玻璃與光電面板等物體。在研磨過程中,必須使用一研磨墊研磨該待研磨基材,因而該研磨墊之品質會直接影響該待研磨基材之研磨效果。Polishing generally refers to the wear control of the initially rough surface in the chemical-mechanical polishing (CMP) process, which uses a polishing slurry containing abrasive particles to be evenly dispersed on the upper surface of a polishing pad, and a substrate to be polished is pressed against the polishing pad and rubbed with repeated regular movements. The substrate to be polished is an object such as a semiconductor, a storage medium substrate, an integrated circuit, a liquid crystal display flat glass, an optical glass, and an optoelectronic panel. During the polishing process, a polishing pad must be used to polish the substrate to be polished, so the quality of the polishing pad will directly affect the polishing effect of the substrate to be polished.

為達到良好的研磨效果,研磨墊通常可具有複數個孔洞,以使研磨漿液可涵養於孔洞中。參考圖1A、1B,分別顯示習知研磨墊之上視、剖視放大圖,該研磨墊具有複數個孔洞,其開口大小約為100 μm,且深度可達約500 μm。由於習知研磨墊的孔洞較大,故研磨過程中所產生的雜質或團聚之研磨粒子等殘留物容易阻塞於孔洞內,造成待研磨基材表面刮傷。In order to achieve a good polishing effect, the polishing pad may generally have a plurality of holes so that the polishing slurry can be contained in the holes. Referring to FIG. 1A and FIG. 1B, the top view and the cross-sectional enlarged view of the conventional polishing pad are shown respectively. The polishing pad has a plurality of holes, the opening size of which is about 100 μm and the depth can reach about 500 μm. Since the holes of the conventional polishing pad are relatively large, the impurities or agglomerated polishing particles and other residues generated during the polishing process are easily blocked in the holes, causing scratches on the surface of the substrate to be polished.

本發明提供一種研磨墊,包含: 一研磨層,具有複數個發泡孔洞,且各該發泡孔洞之直徑為1 μm至10 μm。 The present invention provides a polishing pad, comprising: A polishing layer having a plurality of foamed holes, and the diameter of each foamed hole is 1 μm to 10 μm.

本發明另提供一種製造前述研磨墊之方法,包含: (a) 提供一基底層; (b) 形成一發泡樹脂於該基底層上,該發泡樹脂包含一研磨層及一絨毛層,該研磨層具有複數個發泡孔洞,且各該發泡孔洞之直徑為1 μm至10 μm;及 (c) 移除該絨毛層。 The present invention also provides a method for manufacturing the aforementioned polishing pad, comprising: (a) providing a base layer; (b) forming a foaming resin on the base layer, the foaming resin comprising an abrasive layer and a fleece layer, the abrasive layer having a plurality of foaming holes, and the diameter of each foaming hole is 1 μm to 10 μm; and (c) removing the fleece layer.

本發明亦提供一種研磨裝置,包含: 一研磨盤; 一待研磨基材; 一前述之研磨墊,其係附著於該研磨盤上,並用以研磨該待研磨基材;及 一研磨漿液,其接觸該待研磨基材,以進行研磨。 The present invention also provides a polishing device, comprising: a polishing disc; a substrate to be polished; a polishing pad as mentioned above, which is attached to the polishing disc and used to polish the substrate to be polished; and a polishing slurry, which contacts the substrate to be polished for polishing.

本發明提供一種研磨墊,包含: 一研磨層,具有複數個發泡孔洞,且各該發泡孔洞之直徑為1 μm至10 μm。 The present invention provides a polishing pad, comprising: A polishing layer having a plurality of foamed holes, and the diameter of each foamed hole is 1 μm to 10 μm.

請參看圖2A,為本發明一實施例之研磨墊1的剖視示意圖。該研磨墊1包含一研磨層11,具有複數個發泡孔洞12,且各該發泡孔洞之直徑為1 μm至10 μm。Please refer to Fig. 2A, which is a cross-sectional schematic diagram of a polishing pad 1 according to an embodiment of the present invention. The polishing pad 1 comprises a polishing layer 11 having a plurality of foamed holes 12, and the diameter of each foamed hole is 1 μm to 10 μm.

根據本發明之「研磨墊」係指化學機械研磨製程中,用以抵住一待研磨基材之墊,該研磨墊以重覆規律動作搓磨該待研磨基材,並配合含研磨粒子的研磨漿液,使該待研磨基材初為粗糙表面進行磨耗至平整。According to the present invention, the "polishing pad" refers to a pad used to support a substrate to be polished during the chemical mechanical polishing process. The polishing pad rubs the substrate to be polished with repeated regular movements and cooperates with a polishing slurry containing abrasive particles to wear the initially rough surface of the substrate to be polished to a smooth surface.

根據本發明之研磨層11係為該研磨墊中用以搓磨該待研磨基材之部位。該研磨層11具有複數個發泡孔洞12,且各該發泡孔洞12之直徑為1 μm至10 μm,較佳為1 μm至8 μm,更佳為1 μm至5 μm。The polishing layer 11 of the present invention is a portion of the polishing pad used for rubbing the substrate to be polished. The polishing layer 11 has a plurality of foaming holes 12, and the diameter of each foaming hole 12 is 1 μm to 10 μm, preferably 1 μm to 8 μm, and more preferably 1 μm to 5 μm.

詳言之,該研磨層11之材料可為發泡樹脂,且該發泡孔洞可為該發泡樹脂所形成之孔洞。本發明所言之「發泡樹脂」乙詞指含有熱塑樹脂及熱分解發泡劑之材料。該樹脂較佳地包含選自由以下各物組成之群的至少一者:聚胺酯、聚烯烴、聚碳酸酯、聚乙烯醇、耐綸、彈性橡膠、聚苯乙烯、聚芳烴分子、含氟聚合物、聚醯亞胺、架橋聚胺酯、架橋聚烯烴、聚醚、聚酯、聚丙烯酸酯、彈性聚乙烯、聚四氟乙烯、聚(對苯二甲酸亞乙酯)、聚芳烴醯胺、聚芳烴、聚甲基丙烯酸甲酯、其共聚物、其嵌段共聚物、其混合物及其摻合物。In detail, the material of the grinding layer 11 can be a foaming resin, and the foaming holes can be holes formed by the foaming resin. The term "foaming resin" mentioned in the present invention refers to a material containing a thermoplastic resin and a thermally decomposed foaming agent. The resin preferably includes at least one selected from the group consisting of: polyurethane, polyolefin, polycarbonate, polyvinyl alcohol, nylon, elastic rubber, polystyrene, polyaromatic molecules, fluoropolymers, polyimide, bridged polyurethane, bridged polyolefin, polyether, polyester, polyacrylate, elastic polyethylene, polytetrafluoroethylene, poly(ethylene terephthalate), polyaromatic amide, polyaromatic, polymethyl methacrylate, copolymers thereof, block copolymers thereof, mixtures thereof and blends thereof.

根據本發明之發泡樹脂的發泡之方法可為化學發泡或物理發泡,其中化學發泡係利用可進行化學反應以產生氣體之試劑,使其反應後所產生之氣體均勻分布於該樹脂組合物中。另一方面,物理發泡係將氣體打入該樹脂組合物中,並藉由攪拌使打入之氣體均勻分布於該樹脂組合物中。The foaming method of the foaming resin according to the present invention can be chemical foaming or physical foaming, wherein chemical foaming is to use a reagent that can undergo a chemical reaction to generate gas, and the gas generated after the reaction is evenly distributed in the resin composition. On the other hand, physical foaming is to inject gas into the resin composition and evenly distribute the injected gas in the resin composition by stirring.

如前所述,該發泡孔洞12可為該發泡樹脂所形成之孔洞,且該發泡孔洞12較佳為連通型孔洞。本發明所言之「連通型孔洞」係指至少二孔洞間係為連通,而形成類似蟻穴型之孔洞,該孔洞較佳為連通多孔洞,其有利於研磨液之流動、研磨顆粒之分布及研磨殘留物之移除。As mentioned above, the foaming hole 12 can be a hole formed by the foaming resin, and the foaming hole 12 is preferably a connected hole. The "connected hole" mentioned in the present invention refers to at least two holes connected to form a hole similar to an ant hole. The hole is preferably a connected multi-hole hole, which is beneficial to the flow of the polishing liquid, the distribution of the polishing particles and the removal of the polishing residue.

較佳地,該研磨層11之材料可為聚胺酯,其可經由濕式法形成,以便於調整該發泡孔洞12的孔洞直徑,且可形成連通型孔洞。Preferably, the material of the polishing layer 11 may be polyurethane, which may be formed by a wet process to adjust the hole diameter of the foamed hole 12 and to form interconnected holes.

另一方面,較佳地,該研磨層11包含一研磨表面13,且該發泡孔洞12暴露於該研磨表面13。該研磨表面13之發泡孔洞12密度為15,000個/mm 2至20,000個/mm 2On the other hand, preferably, the polishing layer 11 includes a polishing surface 13, and the foamed pores 12 are exposed on the polishing surface 13. The density of the foamed pores 12 on the polishing surface 13 is 15,000 pores/mm 2 to 20,000 pores/mm 2 .

於本發明之研磨墊中,由於該研磨層11之發泡孔洞12的直徑小於10 μm,故研磨過程中所產生的雜質或團聚之研磨粒子等殘留物不易阻塞於該發泡孔洞12內,而可避免待研磨基材表面刮傷。此外,當該發泡孔洞12為連通型孔洞時,更可促進研磨液流通,幫助排出雜質或團聚之研磨粒子等殘留物。In the polishing pad of the present invention, since the diameter of the foamed holes 12 of the polishing layer 11 is less than 10 μm, the impurities or agglomerated polishing particles and other residues generated during the polishing process are not easily blocked in the foamed holes 12, thereby avoiding scratches on the surface of the substrate to be polished. In addition, when the foamed holes 12 are interconnected holes, the circulation of the polishing liquid can be promoted to help discharge impurities or agglomerated polishing particles and other residues.

請參看圖2B,為本發明另一實施例之研磨墊1b的剖視示意圖。如圖2B所示,該研磨墊1b大致與圖2A中之研磨墊1類似,惟該研磨墊1b更包含一基底層14,且該研磨層11附著於該基底層14。該基底層14之材質可為不織布、含浸聚胺酯之不織布或聚對苯二甲酸乙二酯薄膜。於一實施例中,該基底層14可提供緩衝之效果。Please refer to FIG. 2B, which is a cross-sectional schematic diagram of a polishing pad 1b of another embodiment of the present invention. As shown in FIG. 2B, the polishing pad 1b is roughly similar to the polishing pad 1 in FIG. 2A, but the polishing pad 1b further includes a base layer 14, and the polishing layer 11 is attached to the base layer 14. The material of the base layer 14 can be a non-woven fabric, a non-woven fabric impregnated with polyurethane, or a polyethylene terephthalate film. In one embodiment, the base layer 14 can provide a buffering effect.

本文中使用「不織布」乙詞指具方向性或隨機定向纖維之製造片、網或氈,其由摩擦力及/或內聚力及/或黏合力接合,並不包括紙及併入有接結紗或絲之經編織、針織、簇生、縫編或由濕式碾磨進行黏結(無論是否經額外針縫)之產品。該等纖維可為天然或人造。其可為定長或連續的絲或可原位形成。取決於形成網之方法,不織布通常包含合成不織布、針軋不織布、熔噴不織布、紡黏不織布、乾式成網不織布、濕式成網不織布、縫編不織布或水刺不織布。與織布相比,不織布具有較好的材料特性。The term "nonwoven" as used herein refers to manufactured sheets, webs or felts of directional or randomly oriented fibers, which are held together by friction and/or cohesion and/or adhesion, and does not include paper and products that incorporate binding yarns or filaments that are knitted, knitted, tufted, sewn or bonded by wet milling (whether or not with additional needles). The fibers may be natural or artificial. They may be fixed-length or continuous filaments or may be formed in situ. Depending on the method of forming the web, nonwovens typically include synthetic nonwovens, needle-rolled nonwovens, meltblown nonwovens, spunbond nonwovens, dry-laid nonwovens, wet-laid nonwovens, sewed nonwovens or spunlace nonwovens. Compared with woven fabrics, non-woven fabrics have better material properties.

於本發明之一較佳具體實施例中,該研磨層11之形成可將該基底層14作為一載體,並於該基底層14上形成發泡樹脂,該發泡樹脂具有該發泡孔洞12,續將該發泡樹脂表面經研磨或刮除一定厚度,以形成該研磨表面13,並使該發泡孔洞12暴露於研磨表面13,詳如後述。In a preferred specific embodiment of the present invention, the grinding layer 11 can be formed by using the base layer 14 as a carrier, and forming a foamed resin on the base layer 14, the foamed resin having the foamed holes 12, and then grinding or scraping the foamed resin surface to a certain thickness to form the grinding surface 13, and exposing the foamed holes 12 on the grinding surface 13, as described in detail below.

圖3A、3B分別顯示本發明一實施例之研磨墊在掃描式電子顯微鏡(SEM)下放大1,000倍的上視、剖視圖。由圖3A、3B可知,本發明之研磨墊的發泡孔洞之直徑的最大值約為6.40 μm,最小值約為3.30 μm,平均值約為4.11 μm,且可為連通型孔洞。Figures 3A and 3B respectively show the top view and cross-sectional view of a polishing pad of an embodiment of the present invention under a scanning electron microscope (SEM) at 1,000 times magnification. As shown in Figures 3A and 3B, the maximum diameter of the foamed holes of the polishing pad of the present invention is about 6.40 μm, the minimum diameter is about 3.30 μm, the average diameter is about 4.11 μm, and the holes can be interconnected.

本發明另提供一種製造前述研磨墊之方法,包含: (a) 提供一基底層; (b) 形成一發泡樹脂於該基底層上,該發泡樹脂包含一研磨層及一絨毛層,該研磨層具有複數個發泡孔洞,且各該發泡孔洞之直徑為1 μm至10 μm;及 (c) 移除該絨毛層。 The present invention also provides a method for manufacturing the aforementioned polishing pad, comprising: (a) providing a base layer; (b) forming a foaming resin on the base layer, the foaming resin comprising an abrasive layer and a fleece layer, the abrasive layer having a plurality of foaming holes, and the diameter of each foaming hole is 1 μm to 10 μm; and (c) removing the fleece layer.

請參照圖4A至4D,為本發明一實施例之製造前述研磨墊1或研磨墊1b之方法的步驟示意圖。Please refer to FIGS. 4A to 4D , which are schematic diagrams of steps of a method for manufacturing the polishing pad 1 or the polishing pad 1 b according to an embodiment of the present invention.

圖4A顯示步驟(a) 提供一基底層14,該基底層14之材質可如前述為不織布或聚對苯二甲酸乙二酯薄膜,故於此不再贅述。FIG. 4A shows step (a) of providing a base layer 14. The material of the base layer 14 may be a non-woven fabric or a polyethylene terephthalate film as mentioned above, so it will not be described in detail here.

圖4B顯示步驟(b) 形成一發泡樹脂3於該基底層14上,該發泡樹脂3包含一研磨層31及一絨毛層34,該研磨層31具有複數個發泡孔洞32,且各該發泡孔洞32之直徑為1 μm至10 μm。在該方法之步驟(b)中,該發泡樹脂3較佳係為聚胺酯,且以濕式法形成,以便於調整該發泡孔洞32的孔洞直徑,且可形成連通型孔洞。此外,該基底層14之材質較佳為不織布,藉由調整該不織布的密度、溼度等,可調節該發泡樹脂3的孔洞型狀。FIG4B shows step (b) of forming a foamed resin 3 on the base layer 14. The foamed resin 3 includes a grinding layer 31 and a fleece layer 34. The grinding layer 31 has a plurality of foamed holes 32, and the diameter of each foamed hole 32 is 1 μm to 10 μm. In step (b) of the method, the foamed resin 3 is preferably polyurethane and is formed by a wet method to adjust the hole diameter of the foamed hole 32 and form a connected hole. In addition, the material of the base layer 14 is preferably non-woven fabric. By adjusting the density, humidity, etc. of the non-woven fabric, the hole shape of the foamed resin 3 can be adjusted.

舉例而言,該方法之步驟(b)可包含: (b1)   塗佈包含該發泡樹脂之溶液於該基底層上; (b2)   固化該發泡樹脂; (b3)   洗滌固化之發泡樹脂;及 (b4)   乾燥固化之發泡樹脂。 For example, step (b) of the method may include: (b1)   applying a solution containing the foaming resin on the base layer; (b2)   curing the foaming resin; (b3)   washing the cured foaming resin; and (b4)   drying the cured foaming resin.

在該方法之步驟(b1)中,用於該發泡樹脂3之適合溶劑可包括二甲基甲醯胺(dimethylformamide,DMF)。除該溶劑外,該包含發泡樹脂之溶液可視情況包含諸如界面活性劑等之添加劑。於一實施例中,該包含發泡樹脂之溶液中,該發泡樹脂之濃度較佳在2 wt%至60 wt%之範圍內。In step (b1) of the method, a suitable solvent for the foaming resin 3 may include dimethylformamide (DMF). In addition to the solvent, the solution containing the foaming resin may optionally contain additives such as surfactants. In one embodiment, the concentration of the foaming resin in the solution containing the foaming resin is preferably in the range of 2 wt % to 60 wt %.

在該方法之步驟(b2)中,可將該基底層14及該發泡樹脂3放入一固化溶液中以進行固化。該固化溶液可包含水中約45 wt%至約70 wt%之二甲基甲醯胺,較佳為約55 wt%至約65 wt%,更佳為約60 wt%。固化條件為本發明所屬技術領域中具通常知識者所熟知。固化較佳在室溫(約25℃)及常壓(約1大氣壓)下進行,並浸泡約1小時至約5小時,較佳為約1小時至約5小時,更佳為約3小時。由於步驟(b1)中該包含發泡樹脂之溶液塗佈於該基底層14上,故於步驟(b2)之固化後,該發泡樹脂3附著於該基底層14上。In step (b2) of the method, the base layer 14 and the foaming resin 3 may be placed in a curing solution for curing. The curing solution may contain about 45 wt% to about 70 wt% of dimethylformamide in water, preferably about 55 wt% to about 65 wt%, and more preferably about 60 wt%. Curing conditions are well known to those skilled in the art. Curing is preferably carried out at room temperature (about 25°C) and normal pressure (about 1 atmosphere), and soaking for about 1 hour to about 5 hours, preferably about 1 hour to about 5 hours, and more preferably about 3 hours. Since the solution containing the foaming resin is applied on the base layer 14 in step (b1), the foaming resin 3 is attached to the base layer 14 after curing in step (b2).

舉例而言,於本發明一實施例中,係使用包含水中約60 wt%之二甲基甲醯胺的固化溶液,並浸泡約3小時,以形成該發泡樹脂3。該發泡樹脂3包含研磨層31,其發泡孔洞32直徑為1 μm至10 μm,且該研磨層31在掃描式電子顯微鏡下放大2,600倍的剖視圖如圖4C所示。For example, in one embodiment of the present invention, a curing solution containing about 60 wt% of dimethylformamide in water is used and immersed for about 3 hours to form the foamed resin 3. The foamed resin 3 includes a grinding layer 31, and the diameter of the foamed holes 32 thereof is 1 μm to 10 μm, and the cross-sectional view of the grinding layer 31 magnified 2,600 times under a scanning electron microscope is shown in FIG4C.

在本發明之一較佳實施例中,該製造研磨墊之方法進一步包含在步驟(b2)後之洗滌步驟(b3)。洗滌之目的係自該基底層14及該發泡樹脂3移除殘餘物。在本發明之一實施例中,用水洗滌且視情況使用擠壓輪。洗滌條件為本發明所屬技術領域中具通常知識者所熟知。較佳在50至90℃之水中洗滌該基底層14及該發泡樹脂3且接著使其經歷擠壓輪數次。In a preferred embodiment of the present invention, the method for manufacturing a polishing pad further comprises a washing step (b3) after step (b2). The purpose of washing is to remove residues from the base layer 14 and the foamed resin 3. In an embodiment of the present invention, washing is performed with water and, if necessary, an extrusion wheel is used. The washing conditions are well known to those skilled in the art. Preferably, the base layer 14 and the foamed resin 3 are washed in water at 50 to 90° C. and then subjected to an extrusion wheel several times.

在該方法之步驟(b4)中,乾燥之目的係移除過量溶劑(或洗滌水)。乾燥條件為熟習此領域者所熟知。在本發明之一實施例中,乾燥為空氣乾燥,且乾燥溫度在100℃至160℃之範圍內。In step (b4) of the method, the purpose of drying is to remove excess solvent (or wash water). Drying conditions are well known to those skilled in the art. In one embodiment of the present invention, drying is air drying, and the drying temperature is in the range of 100°C to 160°C.

依據前述之濕式法,可如圖4B所示,於基底層14上形成發泡樹脂3,其同時包含一研磨層31及一絨毛層34。其中,該絨毛層34之孔洞341較大,故須於後續步驟中移除。該研磨層31則具有微小發泡孔洞32,而適宜用於研磨之用途。因此,於步驟(c)  移除該絨毛層34後,可使該發泡樹脂3形成如圖2B所示之研磨層11,其具有一研磨表面13,且該發泡孔洞12暴露於該研磨表面13。藉此,可形成如圖2B所示之研磨墊1b,其包含該研磨層11及該基底層14。According to the aforementioned wet method, as shown in FIG. 4B , a foamed resin 3 can be formed on the base layer 14, which includes a grinding layer 31 and a fleece layer 34 at the same time. Among them, the holes 341 of the fleece layer 34 are relatively large, so it must be removed in a subsequent step. The grinding layer 31 has tiny foamed holes 32, which are suitable for grinding purposes. Therefore, after removing the fleece layer 34 in step (c), the foamed resin 3 can be formed into a grinding layer 11 as shown in FIG. 2B , which has a grinding surface 13, and the foamed holes 12 are exposed on the grinding surface 13. Thereby, a grinding pad 1b as shown in FIG. 2B can be formed, which includes the grinding layer 11 and the base layer 14.

於該方法之步驟(c)中,可使用例如噴砂等機械研磨方式移除該絨毛層34。機械研磨之條件為本發明所屬技術領域中具通常知識者所熟知。於一實施例中,該方法之步驟(c)可包含移除該發泡樹脂的1/10至1/2厚度,以充分移除該絨毛層34。In step (c) of the method, the fleece layer 34 may be removed by mechanical grinding such as sandblasting. The conditions of mechanical grinding are well known to those skilled in the art. In one embodiment, step (c) of the method may include removing 1/10 to 1/2 of the thickness of the foamed resin to fully remove the fleece layer 34.

此外,於一實施例中,如圖4D所示,另可於步驟(c)之前,進行步驟(c0)   移除該基底層。由於該發泡樹脂3會逐漸乾燥並增加與基底層14之結合力,故較佳於形成該發泡樹脂3之後,即移除該基底層14。而後,再移除該絨毛層34,而使該發泡樹脂3形成如圖2A所示之研磨層11,其具有一研磨表面13,且該發泡孔洞12暴露於該研磨表面13。藉此,可形成如圖2A所示之研磨墊1,其包含該研磨層11。In addition, in one embodiment, as shown in FIG. 4D , step (c0) can be performed before step (c) to remove the base layer. Since the foaming resin 3 will gradually dry and increase the bonding force with the base layer 14, it is better to remove the base layer 14 after the foaming resin 3 is formed. Then, the fleece layer 34 is removed, and the foaming resin 3 is formed into a polishing layer 11 as shown in FIG. 2A , which has a polishing surface 13, and the foaming holes 12 are exposed on the polishing surface 13. Thereby, a polishing pad 1 as shown in FIG. 2A can be formed, which includes the polishing layer 11.

本發明亦提供一種研磨裝置,包含: 一研磨盤; 一待研磨基材; 一前述之研磨墊,其係附著於該研磨盤上,並用以研磨該待研磨基材;及 一研磨漿液,其接觸該待研磨基材,以進行研磨。 The present invention also provides a polishing device, comprising: a polishing disc; a substrate to be polished; a polishing pad as mentioned above, which is attached to the polishing disc and used to polish the substrate to be polished; and a polishing slurry, which contacts the substrate to be polished for polishing.

參考圖5,顯示具有本發明研磨墊之研磨裝置之示意圖。該研磨裝置5包括一壓力板51、一吸附墊片52、一待研磨基材53、一研磨盤54、一研磨墊55及一研磨漿液56,且該研磨墊55可為如前所述之研磨墊1或研磨墊1b。該壓力板51係相對於該研磨盤54。該吸附墊片52係利用一背膠層(圖中未示)黏附於該壓力板51上,且該吸附墊片52係用以吸附且固定該待研磨基材53。該研磨墊55係固定於該研磨盤54,且面向該壓力板51,用以對該待研磨基材53進行研磨。Referring to FIG. 5 , a schematic diagram of a polishing device having a polishing pad of the present invention is shown. The polishing device 5 includes a pressure plate 51, an adsorption pad 52, a substrate to be polished 53, a polishing disc 54, a polishing pad 55 and a polishing slurry 56, and the polishing pad 55 can be the polishing pad 1 or the polishing pad 1b as described above. The pressure plate 51 is opposite to the polishing disc 54. The adsorption pad 52 is adhered to the pressure plate 51 by a backing layer (not shown in the figure), and the adsorption pad 52 is used to adsorb and fix the substrate to be polished 53. The polishing pad 55 is fixed to the polishing disc 54 and faces the pressure plate 51 to polish the substrate to be polished 53.

該研磨裝置5之作動方式如下。首先將該待研磨基材53置於該吸附墊片52上,且該待研磨基材53被該吸附墊片52吸住。接著,該研磨盤54及該壓力板51以相反方向旋轉,且同時將該壓力板51向下移動,使該研磨墊55接觸到該待研磨基材53之表面,藉由不斷補充該研磨漿液56以及該研磨墊55的作用,可對該待研磨基材53進行研磨作業。The operation of the polishing device 5 is as follows. First, the substrate 53 to be polished is placed on the adsorption pad 52, and the substrate 53 to be polished is adsorbed by the adsorption pad 52. Then, the polishing disc 54 and the pressure plate 51 rotate in opposite directions, and at the same time, the pressure plate 51 is moved downward, so that the polishing pad 55 contacts the surface of the substrate 53 to be polished. By continuously replenishing the polishing slurry 56 and the polishing pad 55, the substrate 53 to be polished can be polished.

上述實施例僅為說明本發明之原理及其功效,而非限制本發明。本發明所屬技術領域中具通常知識者對上述實施例所做之修改及變化仍不違背本發明之精神。本發明之權利範圍應如後述之申請專利範圍所列。The above embodiments are only for illustrating the principle and effect of the present invention, but not for limiting the present invention. The modification and changes made to the above embodiments by a person with ordinary knowledge in the technical field to which the present invention belongs shall not violate the spirit of the present invention. The scope of the rights of the present invention shall be as listed in the scope of the patent application described below.

1:研磨墊 1a:研磨墊 11:研磨層 12:發泡孔洞 13:研磨表面 14:基底層 3:發泡樹脂 31:研磨層 32:發泡孔洞 34:絨毛層 341:孔洞 5:研磨裝置 51:壓力板 52:吸附墊片 53:待研磨基材 54:研磨盤 55:研磨墊 56:研磨漿液 1: Grinding pad 1a: Grinding pad 11: Grinding layer 12: Foaming holes 13: Grinding surface 14: Base layer 3: Foaming resin 31: Grinding layer 32: Foaming holes 34: Fleece layer 341: Holes 5: Grinding device 51: Pressure plate 52: Adsorption pad 53: Substrate to be polished 54: Grinding disc 55: Grinding pad 56: Grinding slurry

圖1A顯示習知研磨墊之上視放大圖。FIG. 1A shows an enlarged top view of a conventional polishing pad.

圖1B顯示習知研磨墊之剖視放大圖。FIG. 1B shows an enlarged cross-sectional view of a conventional polishing pad.

圖2A顯示本發明一實施例之研磨墊的剖視示意圖。FIG. 2A is a schematic cross-sectional view of a polishing pad according to an embodiment of the present invention.

圖2B顯示本發明另一實施例之研磨墊的剖視示意圖。FIG. 2B is a schematic cross-sectional view of a polishing pad according to another embodiment of the present invention.

圖3A顯示本發明一實施例之研磨墊在掃描式電子顯微鏡(SEM)下放大1,000倍的上視圖。FIG. 3A is a top view of a polishing pad according to an embodiment of the present invention, magnified 1,000 times under a scanning electron microscope (SEM).

圖3B顯示本發明一實施例之研磨墊在掃描式電子顯微鏡(SEM)下放大1,000倍的剖視圖。FIG. 3B is a cross-sectional view of a polishing pad according to an embodiment of the present invention at a magnification of 1,000 times under a scanning electron microscope (SEM).

圖4A顯示本發明一實施例之製造研磨墊之方法的一或多個步驟。FIG. 4A shows one or more steps of a method for manufacturing a polishing pad according to an embodiment of the present invention.

圖4B顯示本發明一實施例之製造研磨墊之方法的一或多個步驟。FIG. 4B shows one or more steps of a method for manufacturing a polishing pad according to an embodiment of the present invention.

圖4C顯示本發明一實施例之發泡樹脂的研磨層在掃描式電子顯微鏡(SEM)下放大2,600倍的剖視圖。FIG4C shows a cross-sectional view of the polishing layer of the foamed resin according to an embodiment of the present invention at a magnification of 2,600 times under a scanning electron microscope (SEM).

圖4D顯示本發明一實施例之製造研磨墊之方法的一或多個步驟。FIG. 4D shows one or more steps of a method for manufacturing a polishing pad according to an embodiment of the present invention.

圖5顯示本發明一實施例之研磨裝置的剖視示意圖。FIG5 is a schematic cross-sectional view of a polishing device according to an embodiment of the present invention.

Claims (8)

一種研磨墊,包含:一研磨層,具有一研磨表面及複數個發泡孔洞,該發泡孔洞暴露於該研磨表面,其中該發泡孔洞為連通型孔洞,各該發泡孔洞之直徑為1μm至10μm,且該研磨表面之發泡孔洞密度為15,000/mm2至20,000/mm2A polishing pad comprises: a polishing layer having a polishing surface and a plurality of foamed holes, wherein the foamed holes are interconnected holes, each of which has a diameter of 1 μm to 10 μm, and a foamed hole density of the polishing surface is 15,000/mm 2 to 20,000/mm 2 . 如請求項1之研磨墊,其中該研磨層之材質係為聚胺酯。 As in claim 1, the polishing pad, wherein the material of the polishing layer is polyurethane. 如請求項1之研磨墊,更包含一基底層,該研磨層附著於該基底層,且該基底層之材質係為不織布或聚對苯二甲酸乙二酯薄膜。 The polishing pad as claimed in claim 1 further comprises a base layer, the polishing layer is attached to the base layer, and the material of the base layer is non-woven fabric or polyethylene terephthalate film. 一種製造如請求項1至3任一項之研磨墊的方法,包含:(a)提供一基底層;(b)形成一發泡樹脂於該基底層上,該發泡樹脂包含一研磨層及一絨毛層,該研磨層具有複數個發泡孔洞,且各該發泡孔洞之直徑為1μm至10μm;及(c)移除該絨毛層。 A method for manufacturing a polishing pad as claimed in any one of claims 1 to 3, comprising: (a) providing a base layer; (b) forming a foaming resin on the base layer, the foaming resin comprising an abrasive layer and a fleece layer, the abrasive layer having a plurality of foaming holes, and the diameter of each foaming hole is 1 μm to 10 μm; and (c) removing the fleece layer. 如請求項4之方法,其中步驟(b)包含以濕式法形成該發泡樹脂。 The method of claim 4, wherein step (b) comprises forming the foaming resin by a wet process. 如請求項4之方法,其中步驟(c)包含移除該發泡樹脂的1/10至1/2厚 度。 The method of claim 4, wherein step (c) comprises removing 1/10 to 1/2 of the thickness of the foaming resin. 如請求項4之方法,其中於步驟(c)之前,更包含:(c0)移除該基底層。 The method of claim 4, wherein before step (c), it further comprises: (c0) removing the base layer. 一種研磨裝置,包含:一研磨盤;一待研磨基材;一根據請求項1至3任一項之研磨墊,其係附著於該研磨盤上,並用以研磨該待研磨基材;及一研磨漿液,其接觸該待研磨基材,以進行研磨。 A polishing device comprises: a polishing disc; a substrate to be polished; a polishing pad according to any one of claims 1 to 3, which is attached to the polishing disc and used to polish the substrate to be polished; and a polishing slurry, which contacts the substrate to be polished for polishing.
TW111101869A 2022-01-17 2022-01-17 Polishing pad, method for manufacturing polishing pad and polishing apparatus TWI841907B (en)

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