TWI838228B - Control circuit for controlling pixels of a display panel - Google Patents
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2320/00—Control of display operating conditions
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Abstract
Description
本揭示關於一種電子電路,特別有關於一種應用於顯示面板的控制電路。 This disclosure relates to an electronic circuit, and in particular to a control circuit for use in a display panel.
隨著半導體技術的演進,顯示面板的尺寸日益增加,且顯示面板的像素之解析度亦大幅提升。當顯示面板的像素顯示灰階亮度時,為了達到使用者的良好觀看體驗,顯示面板的不同區域的像素的亮度必須具有均勻性(uniformity)。此外,亦須避免相鄰區域的像素之間的串音(cross-talk)干擾。 With the development of semiconductor technology, the size of display panels is increasing, and the resolution of pixels of display panels is also greatly improved. When the pixels of the display panel display grayscale brightness, in order to achieve a good viewing experience for users, the brightness of pixels in different areas of the display panel must be uniform. In addition, cross-talk interference between pixels in adjacent areas must also be avoided.
然而,當顯示面板的像素具有高解析度時,像素之間的距離縮小,且相鄰區域的像素共用訊號線。由於像素的控制電路中的電晶體的寄生電容效應,導致訊號線上傳輸的控制訊號發生擾動,導致相鄰區域的像素的發光期間的時間長度不一致,造成了串音干擾,亦破壞了像素亮度的均勻性。 However, when the pixels of the display panel have high resolution, the distance between pixels is reduced, and pixels in adjacent areas share signal lines. Due to the parasitic capacitance effect of the transistors in the pixel control circuit, the control signal transmitted on the signal line is disturbed, resulting in inconsistent duration of the luminescence period of pixels in adjacent areas, causing crosstalk interference and destroying the uniformity of pixel brightness.
針對於上述技術問題,本領域相關產業之技術人員係致力於改良像素的控制電路,期許能夠克服控制訊號的擾動,進而抑制串音干擾且改善像素亮度的均勻性。 In response to the above technical problems, technicians in the relevant industries in this field are committed to improving the pixel control circuit, hoping to overcome the disturbance of the control signal, thereby suppressing crosstalk interference and improving the uniformity of pixel brightness.
根據本揭示之一方面,提供一種控制電路,用於控制顯示面板的像素,控制電路包括幅度調變控制電路與寬度調變控制電路以及以下元件。第一寬度控制電晶體,接收寬度調變供給電壓。第二寬度控制電晶體,耦接於幅度調變控制電路。第三寬度控制電晶體,耦接於第一寬度控制電晶體與第二寬度控制電晶體之間。第一電容,耦接於第三寬度控制電晶體的閘極,第三寬度控制電晶體的閘極經由第一電容接收掃掠訊號。第二電容,耦接於第三寬度控制電晶體的閘極,第三寬度控制電晶體的閘極經由第二電容接收第一電壓。穩壓電晶體,穩壓電晶體的源極耦接於第一電容,穩壓電晶體的汲極耦接於第二電容,第一電壓經由穩壓電晶體提供至掃掠訊號。 According to one aspect of the present disclosure, a control circuit is provided for controlling pixels of a display panel, the control circuit including an amplitude modulation control circuit and a width modulation control circuit and the following elements. A first width control transistor receives a width modulation supply voltage. A second width control transistor is coupled to the amplitude modulation control circuit. A third width control transistor is coupled between the first width control transistor and the second width control transistor. A first capacitor is coupled to a gate of the third width control transistor, and the gate of the third width control transistor receives a sweep signal via the first capacitor. A second capacitor is coupled to a gate of the third width control transistor, and the gate of the third width control transistor receives a first voltage via the second capacitor. A voltage regulator transistor, the source of the voltage regulator transistor is coupled to the first capacitor, the drain of the voltage regulator transistor is coupled to the second capacitor, and the first voltage is provided to the sweep signal via the voltage regulator transistor.
透過閱讀以下圖式、詳細說明以及申請專利範圍,可見本揭示之其它方面以及優點。 Other aspects and advantages of the present disclosure may be seen by reading the following drawings, detailed descriptions and claims.
1000,2000:控制電路 1000,2000:Control circuit
3000:顯示面板 3000: Display panel
100,100a:寬度調變控制電路 100,100a: Width modulation control circuit
200:幅度調變控制電路 200: Amplitude modulation control circuit
300:發光單元 300: Light-emitting unit
I1:驅動電流 I1: driving current
310:發光二極體 310: LED
311:陽極 311: Yang pole
312:陰極 312: cathode
T01~T06:電晶體 T01~T06: Transistor
T1~T3:寬度控制電晶體 T1~T3: Width control transistor
T5:穩壓電晶體 T5: voltage regulator transistor
T4,T6:幅度控制電晶體 T4, T6: Amplitude control transistor
g1~g6,g01~g06:閘極 g1~g6,g01~g06: gate
d1~d6,d01~d06:汲極 d1~d6,d01~d06: drain
s1~s6,s01~s06:源極 s1~s6,s01~s06: source
C1:電容 C1: Capacitor
C2:電容 C2: Capacitor
C3:電容 C3: Capacitor
Cgd:寄生電容 Cgd: parasitic capacitance
SWEEP,SWEEP_A:掃掠訊號 SWEEP, SWEEP_A: sweep signal
SWEEP_B,SWEEP_C:掃掠訊號 SWEEP_B, SWEEP_C: sweep signal
V_GH:第一電壓 V_GH: first voltage
V_GL:第二電壓 V_GL: Second voltage
VSS:接地電壓 VSS: ground voltage
V1:電壓 V1: voltage
V0:下限電壓 V0: Lower limit voltage
Vd3,Vg3,Vg4:電壓 Vd3, Vg3, Vg4: voltage
VDD_PWM:寬度調變供給電壓 VDD_PWM: Width modulation supply voltage
VDD_PAM:幅度調變供給電壓 VDD_PAM: Amplitude modulation supply voltage
EPWM:寬度調變控制訊號 EPWM: width modulation control signal
V_PAM:幅度調變控制訊號 V_PAM: amplitude modulation control signal
S_1:補償控制訊號 S_1: Compensation control signal
V_sig:控制訊號 V_sig: control signal
VSET:設定訊號 VSET: Setting signal
ESET:設定訊號 ESET: Setting signal
S_0:控制訊號 S_0: control signal
t1,t2,t3,t3_A,t3_B,t4:時間點 t1,t2,t3,t3_A,t3_B,t4: time points
ET,ET_A,ET_B:發光期間 ET,ET_A,ET_B: Luminescence period
A,B,C:區域 A,B,C: Area
第1圖是本揭示一實施例之控制電路的方塊圖。 Figure 1 is a block diagram of a control circuit of an embodiment of the present disclosure.
第2圖是第1圖的寬度調變控制電路的電路圖。 Figure 2 is the circuit diagram of the width modulation control circuit in Figure 1.
第3圖是第1圖的幅度調變控制電路的電路圖。 Figure 3 is the circuit diagram of the amplitude modulation control circuit in Figure 1.
第4圖是第1圖的控制電路之一部分的電路圖。 Figure 4 is a circuit diagram of a portion of the control circuit in Figure 1.
第5圖是第4圖的控制電路之部分訊號的時序變化的波形圖。 Figure 5 is a waveform diagram showing the timing changes of some signals in the control circuit of Figure 4.
第6圖是一比較例的控制電路之一部分的電路圖。 Figure 6 is a circuit diagram of a portion of a control circuit of a comparative example.
第7圖是第6圖的控制電路之部分訊號的時序變化的波形圖。 Figure 7 is a waveform diagram showing the timing changes of some signals in the control circuit of Figure 6.
第8圖是第6圖的比較例的控制電路應用於相鄰區域的像素的示意圖。 Figure 8 is a schematic diagram of the control circuit of the comparative example of Figure 6 applied to pixels in adjacent areas.
第9A~9C圖分別是第8圖的三個區域之像素各自的控制電路之掃掠訊號的時序變化的波形圖。 Figures 9A to 9C are waveform diagrams of the timing changes of the scanning signals of the control circuits of the pixels in the three regions of Figure 8.
第10A~10D圖分別是第8圖的三個區域之像素各自的控制電路之掃掠訊號、電晶體的閘極的電壓、及驅動電流之波形的比較圖。 Figures 10A to 10D are comparison diagrams of the waveforms of the sweep signal of the control circuit, the gate voltage of the transistor, and the drive current of the pixels in the three regions of Figure 8.
第11A~11C圖分別是本揭示的控制電路應用於三個區域的掃掠訊號的時序變化的波形圖。 Figures 11A to 11C are waveform diagrams of the timing changes of the sweep signal when the control circuit disclosed in this disclosure is applied to three regions.
第12A~12D圖分別是本揭示的控制電路應用於三個區域時,掃掠訊號、電晶體的閘極的電壓、及驅動電流之波形的比較圖。 Figures 12A to 12D are comparison diagrams of the waveforms of the sweep signal, the gate voltage of the transistor, and the drive current when the control circuit disclosed in this disclosure is applied to three regions.
本說明書的技術用語係參照本技術領域之習慣用語,如本說明書對部分用語有加以說明或定義,該部分用語之解釋係以本說明書之說明或定義為準。本揭示之各個實施例分別具有一或多個技術特徵。在可能實施的前提下,本技術領域具有通常知識者可選擇性地實施任一實施例中部分或全部的技術特徵,或者選擇性地將這些實施例中部分或全部的技術特徵加以組合。 The technical terms in this specification refer to the customary terms in this technical field. If this specification explains or defines some terms, the interpretation of these terms shall be based on the explanation or definition in this specification. Each embodiment disclosed in this disclosure has one or more technical features. Under the premise of possible implementation, a person with ordinary knowledge in this technical field can selectively implement some or all of the technical features in any embodiment, or selectively combine some or all of the technical features in these embodiments.
第1圖是本揭示一實施例之控制電路1000的方塊圖。控制電路1000用於控制顯示面板的像素的灰階亮度。如第1圖所示,控制電路1000包括寬度調變控制電路100及幅度調變控制電路200,控制電路1000用於控制發光單元300的亮度。發光單元300作為顯示面板的一個像素。更具體而言,寬度調變控制電路100用於執行脈衝寬度調變(pulse width modulation,PWM),幅度調變控制電路200用於執行脈衝幅度調變(pulse amplitude modulation,PAM)。控制電路1000根據脈衝寬度調變及脈衝幅度調變來調整發光單元300的亮度。
FIG. 1 is a block diagram of a
寬度調變控制電路100接收掃掠訊號SWEEP、第一電壓V_GH、寬度調變供給電壓VDD_PWM、寬度調變控制訊號EPWM、補償控制訊號S_1、控制訊號V_sig、設定訊號VSET、設定訊號ESET與控制訊號S_0。第一電壓V_GH表示邏輯高電位或閘極高電位,第一電壓V_GH例如是10V。寬度調變供給電壓VDD_PWM例如是10V。
The width
幅度調變控制電路200接收幅度調變供給電壓VDD_PAM、幅度調變控制訊號V_PAM。幅度調變供給電壓VDD_PAM例如是10V。並且,幅度調變控制電路200產生驅動電流I1,驅動電流I1提供至發光單元300。
The amplitude
發光單元300作為顯示面板的一個像素,發光單元300例如是發光二極體310。發光二極體310的陽極311耦接於幅度調變控制電路200以接收驅動電流I1,發光二極體310的陰
極312耦接於接地電壓VSS。接地電壓VSS例如是0V。發光二極體310例如是微發光二極體(Micro-LED)。
The light-emitting
寬度調變控制電路100執行脈衝寬度調變以控制驅動電流I1的持續時間,幅度調變控制電路200執行脈衝幅度調變以控制驅動電流I1的電流量。藉由調整驅動電流I1的持續時間與電流量,控制電路1000可調整發光單元300的亮度。例如,發光單元300的亮度正相關於驅動電流I1的持續時間與電流量。當驅動電流I1的持續時間較長或電流量較大時,發光單元300具有較高的亮度。
The width
第2圖是第1圖的寬度調變控制電路100的電路圖。如第2圖所示,寬度調變控制電路100包括寬度控制電晶體T1、寬度控制電晶體T2、寬度控制電晶體T3、穩壓電晶體T5、電晶體T01~T04、電容C1、電容C2及電容C3。在本實施例中,寬度控制電晶體T1、寬度控制電晶體T2、寬度控制電晶體T3、穩壓電晶體T5及電晶體T01~T04皆為P型金氧半導體電晶體,簡稱PMOS電晶體。
FIG. 2 is a circuit diagram of the width
寬度控制電晶體T1的源極s1耦接於供給電壓源(第2圖未顯示供給電壓源),寬度控制電晶體T1的源極s1從供給電壓源接收寬度調變供給電壓VDD_PWM。寬度控制電晶體T1的閘極g1接收寬度調變控制訊號EPWM。寬度控制電晶體T1的汲極d1耦接於電晶體T01的源極s01,寬度控制電晶體T1的汲極d1經由電晶體T01接收控制訊號V_sig。 The source s1 of the width control transistor T1 is coupled to the supply voltage source (the supply voltage source is not shown in Figure 2), and the source s1 of the width control transistor T1 receives the width modulation supply voltage VDD_PWM from the supply voltage source. The gate g1 of the width control transistor T1 receives the width modulation control signal EPWM. The drain d1 of the width control transistor T1 is coupled to the source s01 of the transistor T01, and the drain d1 of the width control transistor T1 receives the control signal V_sig through the transistor T01.
寬度控制電晶體T3設置於寬度控制電晶體T1與寬度控制電晶體T2之間。寬度控制電晶體T3的源極s3耦接於寬度控制電晶體T1的汲極d1,寬度控制電晶體T3的汲極d3耦接於寬度控制電晶體T2的源極s2,寬度控制電晶體T3的閘極g3耦接於電容C1。寬度控制電晶體T3的閘極g3經由電容C1接收掃掠訊號SWEEP。 The width control transistor T3 is disposed between the width control transistor T1 and the width control transistor T2. The source s3 of the width control transistor T3 is coupled to the drain d1 of the width control transistor T1, the drain d3 of the width control transistor T3 is coupled to the source s2 of the width control transistor T2, and the gate g3 of the width control transistor T3 is coupled to the capacitor C1. The gate g3 of the width control transistor T3 receives the sweep signal SWEEP through the capacitor C1.
寬度控制電晶體T2的源極s2耦接於寬度控制電晶體T3的汲極d3以及電晶體T02的源極s02。寬度控制電晶體T2的閘極g2接收寬度調變控制訊號EPWM。寬度控制電晶體T2的汲極d2耦接於電晶體T04的源極s04,且寬度控制電晶體T2的汲極d2耦接於幅度調變控制電路200(第2圖未顯示幅度調變控制電路200)。
The source s2 of the width control transistor T2 is coupled to the drain d3 of the width control transistor T3 and the source s02 of the transistor T02. The gate g2 of the width control transistor T2 receives the width modulation control signal EPWM. The drain d2 of the width control transistor T2 is coupled to the source s04 of the transistor T04, and the drain d2 of the width control transistor T2 is coupled to the amplitude modulation control circuit 200 (the amplitude
穩壓電晶體T5的源極s5耦接於電容C1。穩壓電晶體T5的閘極g5耦接於電晶體T01的閘極g01與電晶體T02的閘極g02。穩壓電晶體T5的閘極g5、電晶體T01的閘極g01與電晶體T02的閘極g02都接收補償控制訊號S_1。穩壓電晶體T5的汲極d5接收第一電壓V_GH。在一種示例中,穩壓電晶體T5的汲極d5耦接於內部電路的節點或電壓源,以接收內部電路提供的固定電壓。例如,穩壓電晶體T5的汲極d5耦接於內部的閘極驅動器陣列(Gate Driver on Array,GOA)以接收閘極驅動器陣列提供的第一電壓V_GH。 The source s5 of the voltage regulator transistor T5 is coupled to the capacitor C1. The gate g5 of the voltage regulator transistor T5 is coupled to the gate g01 of the transistor T01 and the gate g02 of the transistor T02. The gate g5 of the voltage regulator transistor T5, the gate g01 of the transistor T01 and the gate g02 of the transistor T02 all receive the compensation control signal S_1. The drain d5 of the voltage regulator transistor T5 receives the first voltage V_GH. In one example, the drain d5 of the voltage regulator transistor T5 is coupled to a node or a voltage source of an internal circuit to receive a fixed voltage provided by the internal circuit. For example, the drain d5 of the voltage regulator transistor T5 is coupled to the internal gate driver array (Gate Driver on Array, GOA) to receive the first voltage V_GH provided by the gate driver array.
電晶體T02的閘極g02耦接於電晶體T01的閘極 g01並且接收補償控制訊號S_1。電晶體T02的汲極d02耦接於電晶體T03的源極s03、電容C1與電容C2。電晶體T02的源極s02耦接於寬度控制電晶體T2的源極s2。 The gate g02 of transistor T02 is coupled to the gate g01 of transistor T01 and receives the compensation control signal S_1. The drain d02 of transistor T02 is coupled to the source s03 of transistor T03, capacitor C1 and capacitor C2. The source s02 of transistor T02 is coupled to the source s2 of the width control transistor T2.
電晶體T03的閘極g03耦接於電晶體T03的汲極d03並且接收控制訊號S_0。電晶體T04的源極s04耦接於寬度控制電晶體T2的汲極d2,電晶體T04的閘極g04接收設定訊號ESET,電晶體T04的汲極d04接收設定訊號VSET。 The gate g03 of transistor T03 is coupled to the drain d03 of transistor T03 and receives the control signal S_0. The source s04 of transistor T04 is coupled to the drain d2 of the width control transistor T2, the gate g04 of transistor T04 receives the setting signal ESET, and the drain d04 of transistor T04 receives the setting signal VSET.
電容C1的一端耦接於穩壓電晶體T5的源極s5並且接收掃掠訊號SWEEP,電容C1的另一端耦接於寬度控制電晶體T3的閘極g3與電容C2。電容C2的一端耦接於穩壓電晶體T5的汲極d5並且接收第一電壓V_GH,電容C2的另一端耦接於寬度控制電晶體T3的閘極g3以及電容C1。電容C3的一端耦接於電晶體T04的源極s04,電容C3的另一端耦接於電晶體T04的汲極d04。 One end of capacitor C1 is coupled to the source s5 of voltage regulator transistor T5 and receives the sweep signal SWEEP, and the other end of capacitor C1 is coupled to the gate g3 of width control transistor T3 and capacitor C2. One end of capacitor C2 is coupled to the drain d5 of voltage regulator transistor T5 and receives the first voltage V_GH, and the other end of capacitor C2 is coupled to the gate g3 of width control transistor T3 and capacitor C1. One end of capacitor C3 is coupled to the source s04 of transistor T04, and the other end of capacitor C3 is coupled to the drain d04 of transistor T04.
第3圖是第1圖的幅度調變控制電路200的電路圖。如第3圖所示,幅度調變控制電路200包括幅度控制電晶體T4、幅度控制電晶體T6、電晶體T05及電晶體T06。在本實施例中,幅度控制電晶體T4、幅度控制電晶體T6、電晶體T05及電晶體T06皆為PMOS電晶體。
FIG. 3 is a circuit diagram of the amplitude
幅度控制電晶體T4的閘極g4耦接於寬度調變控制電路100(第3圖未顯示寬度調變控制電路100)。幅度控制電晶體T4的源極s4耦接於幅度控制電晶體T6的汲極d6。
The gate g4 of the amplitude control transistor T4 is coupled to the width modulation control circuit 100 (the width
幅度控制電晶體T6的閘極g6接收幅度調變控制訊號V_PAM,幅度控制電晶體T6的源極s6耦接於電晶體T06的汲極d06。 The gate g6 of the amplitude control transistor T6 receives the amplitude modulation control signal V_PAM, and the source s6 of the amplitude control transistor T6 is coupled to the drain d06 of the transistor T06.
電晶體T05的汲極d05耦接於發光單元300。在本實施例中,電晶體T05的汲極d05耦接於發光單元300的二極體310的陽極311。電晶體T05的源極s05耦接於幅度控制電晶體T4的汲極d4。幅度控制電晶體T4的汲極d4提供驅動電流I1,驅動電流I1經由電晶體T05傳送至二極體310。
The drain d05 of the transistor T05 is coupled to the light-emitting
電晶體T06的源極s06耦接於另一個供給電壓源(第3圖未顯示此供給電壓源),電晶體T06的源極s06從此供給電壓源接收幅度調變供給電壓VDD_PAM。 The source s06 of transistor T06 is coupled to another supply voltage source (this supply voltage source is not shown in FIG. 3 ), and the source s06 of transistor T06 receives the amplitude modulated supply voltage VDD_PAM from this supply voltage source.
第4圖是第1圖的控制電路1000之一部分的電路圖。第4圖繪示了第2圖的寬度調變控制電路100之一部分與第3圖的幅度調變控制電路200之一部分。第5圖是第4圖的控制電路1000之部分訊號的時序變化的波形圖。控制電路1000可操作於不同的工作階段以控制發光單元300的發光,控制電路1000的工作階段例如包括補償(compensation)階段與發光(emission)階段。
FIG. 4 is a circuit diagram of a portion of the
請同時參見第4、5圖,從時間點t1到時間點t2的期間,控制電路1000操作於補償階段。從時間點t2到時間點t4的期間,控制電路1000操作於發光階段。
Please refer to Figures 4 and 5 at the same time. From time point t1 to time point t2, the
首先,當控制電路1000操作於補償階段時,補償控
制訊號S_1的電壓從第一電壓V_GH降低為第二電壓V_GL。第一電壓V_GH是較高的電壓,第二電壓V_GL是較低的電壓,第一電壓V_GH高於第二電壓V_GL。第一電壓V_GH例如是10V,第二電壓V_GL例如是0V。並且,控制訊號V_sig的電壓從第二電壓V_GL逐漸增加為第一電壓V_GH。掃掠訊號SWEEP的電壓維持為第一電壓V_GH。
First, when the
電晶體T01的閘極g01接收補償控制訊號S_1。電晶體T01因應於補償控制訊號S_1而導通(即,開啟(turned ON))或截止(即,關閉(turned OFF))。在補償階段,補償控制訊號S_1的電壓降低為第二電壓V_GL,電晶體T01是PMOS電晶體,因此電晶體T01為導通。控制訊號V_sig經由導通的電晶體T01傳送至寬度控制電晶體T3的源極s3。 The gate g01 of transistor T01 receives the compensation control signal S_1. Transistor T01 is turned on (i.e., turned ON) or turned off (i.e., turned OFF) in response to the compensation control signal S_1. In the compensation stage, the voltage of the compensation control signal S_1 is reduced to the second voltage V_GL. Transistor T01 is a PMOS transistor, so transistor T01 is turned on. The control signal V_sig is transmitted to the source s3 of the width control transistor T3 through the turned-on transistor T01.
寬度控制電晶體T3的閘極g3經由電容C1接收掃掠訊號SWEEP,寬度控制電晶體T3的源極s3經由導通的電晶體T01接收控制訊號V_sig。寬度控制電晶體T3因應於掃掠訊號SWEEP與控制訊號V_sig的電壓變化而導通或截止。當寬度控制電晶體T3的源極s3與閘極g3之間的電壓差Vsg3大於寬度控制電晶體T3的臨界電壓Vth3時,寬度控制電晶體T3為導通。 The gate g3 of the width control transistor T3 receives the sweep signal SWEEP through the capacitor C1, and the source s3 of the width control transistor T3 receives the control signal V_sig through the turned-on transistor T01. The width control transistor T3 is turned on or off in response to the voltage changes of the sweep signal SWEEP and the control signal V_sig. When the voltage difference Vsg3 between the source s3 and the gate g3 of the width control transistor T3 is greater than the critical voltage Vth3 of the width control transistor T3, the width control transistor T3 is turned on.
另一方面,當寬度調變控制訊號EPWM的電壓是第二電壓V_GL時,寬度控制電晶體T1與寬度控制電晶體T2為導通。當寬度控制電晶體T1、T2與T3皆為導通時,可對於幅度控制電晶體T4的閘極g4進行充電,使幅度控制電晶體T4的閘極g4 的電壓Vg4逐漸增加。例如,在時間點t2,閘極g4的電壓Vg4增加至寬度調變供給電壓VDD_PWM。 On the other hand, when the voltage of the width modulation control signal EPWM is the second voltage V_GL, the width control transistor T1 and the width control transistor T2 are turned on. When the width control transistors T1, T2 and T3 are all turned on, the gate g4 of the amplitude control transistor T4 can be charged, so that the voltage Vg4 of the gate g4 of the amplitude control transistor T4 gradually increases. For example, at time point t2, the voltage Vg4 of the gate g4 increases to the width modulation supply voltage VDD_PWM.
並且,閘極g4的電壓Vg4經由導通的寬度控制電晶體T2傳送至寬度控制電晶體T3的汲極d3,因此,寬度控制電晶體T3的汲極d3的電壓Vd3亦隨之增加。例如,在時間點t2,汲極d3的電壓Vd3增加至寬度調變供給電壓VDD_PWM。 Furthermore, the voltage Vg4 of the gate g4 is transmitted to the drain d3 of the width control transistor T3 through the turned-on width control transistor T2, so the voltage Vd3 of the drain d3 of the width control transistor T3 also increases accordingly. For example, at time point t2, the voltage Vd3 of the drain d3 increases to the width modulation supply voltage VDD_PWM.
寬度控制電晶體T3的閘極g3與汲極d3之間具有寄生電容Cgd,因此電壓Vd3的變化可能經由寄生電容Cgd反映於閘極g3的電壓Vg3,致使電壓Vg3在時間點t1到時間點t2的期間發生擾動。並且,電壓Vg3的變化可能經由電容C1反映於掃掠訊號SWEEP的電壓,導致掃掠訊號SWEEP發生擾動。 There is a parasitic capacitor Cgd between the gate g3 and the drain d3 of the width control transistor T3, so the change of the voltage Vd3 may be reflected in the voltage Vg3 of the gate g3 through the parasitic capacitor Cgd, causing the voltage Vg3 to fluctuate during the period from time point t1 to time point t2. In addition, the change of the voltage Vg3 may be reflected in the voltage of the sweep signal SWEEP through the capacitor C1, causing the sweep signal SWEEP to fluctuate.
本實施例的控制電路1000設置了穩壓電晶體T5。穩壓電晶體T5的閘極g5接收補償控制訊號S_1,穩壓電晶體T5因應於補償控制訊號S_1而導通或截止。在補償階段,補償控制訊號S_1的電壓是第二電壓V_GL,穩壓電晶體T5是PMOS電晶體,因此穩壓電晶體T5為導通。穩壓電晶體T5的源極s5耦接於掃掠訊號SWEEP,穩壓電晶體T5的汲極d5耦接於第一電壓V_GH。第一電壓V_GH經由導通的穩壓電晶體T5傳送至掃掠訊號SWEEP,以將掃掠訊號SWEEP的電壓穩定維持於第一電壓V_GH。上述機制稱為「掃掠訊號的穩定維持(sweep holding)」,將掃掠訊號SWEEP的電壓穩定維持於內部的閘極驅動器陣列提供的第一電壓V_GH。
The
而後,從時間點t2到時間點t4的期間,控制電路1000操作於發光階段,掃掠訊號SWEEP的電壓逐漸降低。掃掠訊號SWEEP經由電容C1傳送至寬度控制電晶體T3的閘極g3,寬度控制電晶體T3因應於掃掠訊號SWEEP的電壓變化而導通或截止。當寬度控制電晶體T3為導通時,可對於幅度控制電晶體T4的閘極g4進行充電以增加閘極g4的電壓Vg4。從時間點t2到時間點t3的期間,幅度控制電晶體T4為導通,幅度控制電晶體T4的汲極d4提供驅動電流I1,驅動電流I1經由電晶體T05傳送至發光單元300,發光單元300因應於驅動電流I1而發光。
Then, from time point t2 to time point t4, the
在時間點t3,掃掠訊號SWEEP的電壓降低至下限電壓V0,幅度控制電晶體T4的閘極g4的電壓Vg4增加至較高的電壓,幅度控制電晶體T4為截止。在時間點t3,幅度調變控制電路200停止提供驅動電流I1至發光單元300,發光單元300停止發光。在發光階段之中,發光單元300實際進行發光的發光期間ET是介於時間點t2與時間點t3之間。
At time point t3, the voltage of the sweep signal SWEEP drops to the lower limit voltage V0, the voltage Vg4 of the gate g4 of the amplitude control transistor T4 increases to a higher voltage, and the amplitude control transistor T4 is cut off. At time point t3, the amplitude
本實施例的控制電路1000設置了電容C2。當控制電路1000操作於發光階段時,可藉由電容C2減少寬度控制電晶體T3的寄生電容Cgd的耦合量,據以減少寬度控制電晶體T3的汲極d3的電壓Vd3的變化對於閘極g3的電壓Vg3的影響,進而減少掃掠訊號SWEEP的擾動。
The
更具體而言,電容C2與電容C1提供寬度控制電晶體T3的寄生電容Cgd的分壓。電容C2藉由分壓方式以減少寬度
控制電晶體T3的寄生電容Cgd對於閘極g3的電壓Vg3的耦合量。當尚未設置電容C2時,僅由電容C1進行分壓,分壓比例為。寬度控制電晶體T3的閘極g3的電壓Vg3的變化量△V是
正相關於分壓比例,如式(1)所示:
在第4圖的實施例中,在寬度控制電晶體T3的閘極g3與穩壓電晶體T5的汲極d5之間增設電容C2。藉由電容C1與電容C2進行分壓,分壓比例為。寬度控制電晶體T3的閘極g3的電壓Vg3的變化量△V如式(2)所示:
增設電容C2後,分壓比例小於未設置電容 C2時的分壓比例。據此,可減少寄生電容Cgd對於閘極g3的電壓Vg3的耦合量,進而減少掃掠訊號SWEEP的擾動。 After adding capacitor C2, the voltage division ratio Less than the voltage division ratio when capacitor C2 is not set Accordingly, the coupling amount of the parasitic capacitance Cgd to the voltage Vg3 of the gate g3 can be reduced, thereby reducing the disturbance of the sweep signal SWEEP.
第6圖是一比較例的控制電路2000之一部分的電路圖。第6圖繪示了控制電路2000的寬度調變控制電路100a之一部分與幅度調變控制電路200之一部分。第7圖是第6圖的控制電路2000之部分訊號的時序變化的波形圖。
FIG. 6 is a circuit diagram of a portion of a control circuit 2000 of a comparative example. FIG. 6 shows a portion of a width
請同時參見第6、7圖,相較於第4圖的本揭示的控
制電路1000,第6圖的比較例的寬度調變控制電路100a未設置穩壓電晶體T5與電容C2。在時間點t1到時間點t2的期間,對於幅度控制電晶體T4的閘極g4進行充電,使閘極g4的電壓Vg4逐漸增加,因此寬度控制電晶體T3的汲極d3的電壓Vd3亦隨之增加。汲極d3的電壓Vd3的變化經由寄生電容Cgd反映於閘極g3的電壓Vg3,並且電壓Vg3的變化經由電容C1反映於掃掠訊號SWEEP的電壓,導致掃掠訊號SWEEP發生擾動。
Please refer to Figures 6 and 7 at the same time. Compared with the
由於第6圖的比較例的寬度調變控制電路100a未設置穩壓電晶體T5,也未將內部電路的固定電壓提供至掃掠訊號SWEEP,因此無法將掃掠訊號SWEEP穩定維持於第一電壓V_GH。如第7圖所示,掃掠訊號SWEEP在時間點t2增加為電壓V1。掃掠訊號SWEEP的電壓增加導致寬度控制電晶體T3與幅度控制電晶體T4的導通期間改變,進而導致發光單元300的發光期間ET的改變。發光期間ET的時間長度是相關於掃掠訊號SWEEP的電壓,當掃掠訊號SWEEP在時間點t2增加為電壓V1時,發光期間ET隨之增加。
Since the width
第8圖是第6圖的比較例的控制電路2000應用於相鄰區域的像素的示意圖。顯示面板3000包括彼此相鄰的區域A、區域B與區域C。區域B與區域C設置於顯示面板3000之中的相同水平列,區域A則設置於另一個水平列。區域B與區域C設置的水平列是相鄰於區域A設置的水平列。控制電路2000用於控制區域A的像素、區域B的像素與區域C的像素。
FIG. 8 is a schematic diagram of the control circuit 2000 of the comparative example of FIG. 6 being applied to pixels in adjacent regions. The
第9A~9C圖分別是第8圖的區域A、區域B與區域C之像素各自的控制電路2000之掃掠訊號的時序變化的波形圖。當控制電路2000操作於補償階段時,汲極d3的電壓Vd3的變化經由寄生電容Cgd反映於閘極g3的電壓Vg3,並且電壓Vg3的變化經由電容C1反映於掃掠訊號的電壓,導致掃掠訊號發生擾動。如第9A圖所示,區域A之像素之掃掠訊號SWEEP_A受到汲極d3的電壓Vd3與閘極g3的電壓Vg3的影響程度較小,因此掃掠訊號SWEEP_A的擾動較小。例如,掃掠訊號SWEEP_A的電壓在時間點t2增加至電壓V1_A。區域A之像素的發光期間ET_A的時間長度是相關於掃掠訊號SWEEP_A的電壓,當掃掠訊號SWEEP_A在時間點t2增加至電壓V1_A時,發光期間ET_A的時間長度隨之增加。 Figures 9A to 9C are waveform diagrams of the timing changes of the sweep signal of the control circuit 2000 for the pixels in regions A, B, and C of Figure 8. When the control circuit 2000 operates in the compensation stage, the change of the voltage Vd3 of the drain d3 is reflected in the voltage Vg3 of the gate g3 via the parasitic capacitor Cgd, and the change of the voltage Vg3 is reflected in the voltage of the sweep signal via the capacitor C1, causing disturbance of the sweep signal. As shown in Figure 9A, the sweep signal SWEEP_A of the pixel in region A is less affected by the voltage Vd3 of the drain d3 and the voltage Vg3 of the gate g3, so the disturbance of the sweep signal SWEEP_A is smaller. For example, the voltage of the sweep signal SWEEP_A increases to the voltage V1_A at time point t2. The duration of the luminous period ET_A of the pixel in region A is related to the voltage of the sweep signal SWEEP_A. When the sweep signal SWEEP_A increases to the voltage V1_A at time point t2, the duration of the luminous period ET_A increases accordingly.
並且,如第9B圖所示,區域B之像素之掃掠訊號SWEEP_B受到汲極d3的電壓Vd3與閘極g3的電壓Vg3的影響程度較大,因此掃掠訊號SWEEP_B的擾動較大,例如,掃掠訊號SWEEP_B的電壓在時間點t2增加至電壓V1_B,電壓V1_B大於掃掠訊號SWEEP_A變化後的電壓V1_A。當掃掠訊號SWEEP_B在時間點t2增加至電壓V1_B時,區域B之像素的發光期間ET_B的時間長度隨之增加。 Moreover, as shown in FIG. 9B , the sweep signal SWEEP_B of the pixel in region B is more affected by the voltage Vd3 of the drain d3 and the voltage Vg3 of the gate g3, so the disturbance of the sweep signal SWEEP_B is greater. For example, the voltage of the sweep signal SWEEP_B increases to the voltage V1_B at the time point t2, and the voltage V1_B is greater than the voltage V1_A after the sweep signal SWEEP_A changes. When the sweep signal SWEEP_B increases to the voltage V1_B at the time point t2, the duration of the luminous period ET_B of the pixel in region B increases accordingly.
由於電壓V1_B大於電壓V1_A,區域B之像素的發光期間ET_B的時間長度大於區域A之像素的發光期間ET_A。區域B之像素的亮度大於區域A之像素的亮度。因此,導致區域 A與區域B的像素發生串音(crosstalk)及均勻度(uniformity)不佳的狀況。 Since the voltage V1_B is greater than the voltage V1_A, the duration of the luminescence period ET_B of the pixels in area B is greater than the luminescence period ET_A of the pixels in area A. The brightness of the pixels in area B is greater than the brightness of the pixels in area A. Therefore, the pixels in areas A and B have crosstalk and poor uniformity.
另一方面,在第9C圖中,對於區域C之像素的控制電路2000而言,掃掠訊號SWEEP_C在時間點t1從下限電壓V0逐漸降低。在時間點t1至時間點t4的期間區域C之像素不發光。 On the other hand, in FIG. 9C, for the control circuit 2000 of the pixel in region C, the sweep signal SWEEP_C gradually decreases from the lower limit voltage V0 at time point t1. The pixel in region C does not emit light during the period from time point t1 to time point t4.
第10A~10D圖分別是第8圖的區域A、區域B與區域C之像素各自的控制電路2000之掃掠訊號、電晶體的閘極的電壓、及驅動電流之波形的比較圖。如第10A圖所示,區域A之像素之掃掠訊號SWEEP_A的擾動較小,區域B之像素之掃掠訊號SWEEP_B的擾動較大。類似的,如第10B圖所示,應用於區域A之控制電路2000的寬度控制電晶體T3的閘極g3的電壓Vg3(A)的擾動較小,區域B之寬度控制電晶體T3的閘極g3的電壓Vg3(B)的擾動較大。 Figures 10A to 10D are comparison diagrams of the waveforms of the sweep signal of the control circuit 2000, the gate voltage of the transistor, and the driving current of the pixels in regions A, B, and C of Figure 8. As shown in Figure 10A, the perturbation of the sweep signal SWEEP_A of the pixel in region A is smaller, and the perturbation of the sweep signal SWEEP_B of the pixel in region B is larger. Similarly, as shown in FIG. 10B, the voltage Vg3(A) of the gate g3 of the width control transistor T3 of the control circuit 2000 applied to region A has a smaller disturbance, and the voltage Vg3(B) of the gate g3 of the width control transistor T3 of region B has a larger disturbance.
如第10C圖所示,區域A之幅度控制電晶體T4的閘極g4的電壓Vg4(A)的上升斜率與區域B之幅度控制電晶體T4的閘極g4的電壓Vg4(B)的上升斜率不一致,因此區域A與區域B各自的幅度控制電晶體T4的閘極g4的充電速度不一致,導致幅度控制電晶體T4導通或截止的時間不一致。 As shown in Figure 10C, the rising slope of the voltage Vg4(A) of the gate g4 of the amplitude control transistor T4 in region A is inconsistent with the rising slope of the voltage Vg4(B) of the gate g4 of the amplitude control transistor T4 in region B. Therefore, the charging speed of the gate g4 of the amplitude control transistor T4 in region A and region B is inconsistent, resulting in inconsistent turn-on or turn-off time of the amplitude control transistor T4.
如第10D圖所示,由於區域A與區域B各自的幅度控制電晶體T4導通或截止的時間不一致,導致區域A與區域B 各自的像素的驅動電流I1(A)與驅動電流I1(B)的電流量不一致。 As shown in Figure 10D, since the amplitude control transistor T4 of region A and region B is turned on or off at different times, the driving current I1(A) and driving current I1(B) of the pixels of region A and region B are inconsistent.
相對的,當本揭示的控制電路1000用於控制區域A、區域B與區域C之像素時,由於掃掠訊號SWEEP經由穩壓電晶體T5穩定維持於固定的第一電壓V_GH,且藉由電容C2減少寬度控制電晶體T3的寄生電容Cgd的耦合量,因此在補償階段與發光階段掃掠訊號SWEEP幾乎不會擾動。第11A~11C圖分別是本揭示的控制電路1000應用於區域A、區域B與區域C的掃掠訊號的時序變化的波形圖。如第11A圖所示,在時間點t1至時間點t2的期間,區域A之像素之掃掠訊號SWEEP_A穩定維持於第一電壓V_GH。同樣的,如第11B圖所示,在時間點t1至時間點t2的期間,區域B之像素之掃掠訊號SWEEP_B亦穩定維持於第一電壓V_GH。因此,區域A之像素的發光期間ET_A的時間長度大致相等於區域B之像素的發光期間ET_B的時間長度。
In contrast, when the
第12A~12D圖分別是本揭示的控制電路1000應用於區域A、區域B與區域C時,掃掠訊號、電晶體的閘極的電壓、及驅動電流之波形的比較圖。如第12A圖所示,區域A與區域B之掃掠訊號SWEEP_A與掃掠訊號SWEEP_B的擾動都非常小,掃掠訊號SWEEP_A與掃掠訊號SWEEP_B的電壓變化大致相同。
Figures 12A to 12D are comparison diagrams of the waveforms of the sweep signal, the gate voltage of the transistor, and the driving current when the
類似的,如第12B圖所示,區域A與區域B之寬度控制電晶體T3的閘極g3的電壓Vg3(A)與電壓Vg3(B)的擾動都非常小,電壓Vg3(A)與電壓Vg3(B)的變化大致相同。 Similarly, as shown in FIG. 12B, the disturbances of the voltage Vg3(A) and the voltage Vg3(B) of the gate g3 of the width control transistor T3 in regions A and B are very small, and the changes of the voltage Vg3(A) and the voltage Vg3(B) are roughly the same.
如第12C圖所示,區域A與區域B之幅度控制電晶體T4的閘極g4的電壓Vg4(A)與電壓Vg4(B)的上升斜率大致相同,因此區域A與區域B各自的幅度控制電晶體T4的閘極g4的充電速度大致相同。 As shown in Figure 12C, the rising slopes of the voltage Vg4(A) and the voltage Vg4(B) of the gate g4 of the amplitude control transistor T4 in region A and region B are roughly the same, so the charging speeds of the gate g4 of the amplitude control transistor T4 in region A and region B are roughly the same.
如第12D圖所示,區域A與區域B各自的像素的驅動電流I1(A)與驅動電流I1(B)的電流量大致相同。因此,區域A與區域B各自的像素的亮度大致相同,有效地克服了串音與均勻度不佳的狀況。 As shown in Figure 12D, the currents of the driving currents I1(A) and I1(B) of the pixels in area A and area B are roughly the same. Therefore, the brightness of the pixels in area A and area B is roughly the same, effectively overcoming the problems of crosstalk and poor uniformity.
雖然本揭示已以較佳實施例及範例詳細揭示如上,可理解的是,此些範例意指說明而非限制之意義。可預期的是,所屬技術領域中具有通常知識者可想到多種修改及組合,其多種修改及組合落在本揭示之精神以及後附之申請專利範圍之範圍內。 Although the present disclosure has been disclosed in detail with preferred embodiments and examples, it is understood that these examples are intended to be illustrative rather than restrictive. It is expected that a person with ordinary knowledge in the relevant technical field can think of various modifications and combinations, and the various modifications and combinations fall within the spirit of the present disclosure and the scope of the attached patent application.
1000:控制電路 1000: Control circuit
100:寬度調變控制電路 100: Width modulation control circuit
200:幅度調變控制電路 200: Amplitude modulation control circuit
300:發光單元 300: Light-emitting unit
I1:驅動電流 I1: driving current
T01,T02,T05:電晶體 T01, T02, T05: Transistor
T1~T3:寬度控制電晶體 T1~T3: Width control transistor
T5:穩壓電晶體 T5: voltage regulator transistor
T4:幅度控制電晶體 T4: Amplitude control transistor
g01,g3,g4,g5:閘極 g01,g3,g4,g5: gate
d01,d3,d5:汲極 d01,d3,d5: drain
s01,s3,s5:源極 s01,s3,s5: source
C1:電容 C1: Capacitor
C2:電容 C2: Capacitor
Cgd:寄生電容 Cgd: parasitic capacitance
SWEEP:掃掠訊號 SWEEP: sweep signal
V_GH:第一電壓 V_GH: first voltage
VSS:接地電壓 VSS: ground voltage
VDD_PWM:寬度調變供給電壓 VDD_PWM: Width modulation supply voltage
EPWM:寬度調變控制訊號 EPWM: width modulation control signal
S_1:補償控制訊號 S_1: Compensation control signal
V_sig:控制訊號 V_sig: control signal
Claims (10)
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TW202015020A (en) * | 2018-10-04 | 2020-04-16 | 南韓商三星電子股份有限公司 | Display panel and method for driving the display panel |
CN115312011A (en) * | 2022-04-26 | 2022-11-08 | 友达光电股份有限公司 | Pixel circuit and power supply method of shutdown power supply sequence thereof |
CN115588402A (en) * | 2022-09-30 | 2023-01-10 | 深圳市华星光电半导体显示技术有限公司 | Drive circuit and display panel |
US20230024912A1 (en) * | 2020-04-16 | 2023-01-26 | Samsung Electronics Co., Ltd. | Display module and driving method of display module |
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TW202015020A (en) * | 2018-10-04 | 2020-04-16 | 南韓商三星電子股份有限公司 | Display panel and method for driving the display panel |
US20230024912A1 (en) * | 2020-04-16 | 2023-01-26 | Samsung Electronics Co., Ltd. | Display module and driving method of display module |
CN115312011A (en) * | 2022-04-26 | 2022-11-08 | 友达光电股份有限公司 | Pixel circuit and power supply method of shutdown power supply sequence thereof |
CN115588402A (en) * | 2022-09-30 | 2023-01-10 | 深圳市华星光电半导体显示技术有限公司 | Drive circuit and display panel |
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