TWI838228B - Control circuit for controlling pixels of a display panel - Google Patents

Control circuit for controlling pixels of a display panel Download PDF

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Publication number
TWI838228B
TWI838228B TW112115133A TW112115133A TWI838228B TW I838228 B TWI838228 B TW I838228B TW 112115133 A TW112115133 A TW 112115133A TW 112115133 A TW112115133 A TW 112115133A TW I838228 B TWI838228 B TW I838228B
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Taiwan
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voltage
transistor
control circuit
width
gate
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TW112115133A
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Chinese (zh)
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鄧名揚
張哲嘉
莊銘宏
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友達光電股份有限公司
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Priority to TW112115133A priority Critical patent/TWI838228B/en
Priority to CN202311327567.5A priority patent/CN117334146A/en
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    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2320/00Control of display operating conditions
    • G09G2320/02Improving the quality of display appearance
    • G09G2320/0233Improving the luminance or brightness uniformity across the screen

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)

Abstract

A control circuit, for controlling pixels of a display panel, includes an amplitude modulation control circuit, a with modulation control circuit, a first width control transistor, a second width control transistor and the following elements. A third width control transistor, coupled between the first width control transistor and the second width control transistor. A first capacitor, coupled to a gate of the third width control transistor, the gate of the third width control transistor receives a sweep signal through the first capacitor. A second capacitor, coupled to the gate of the third width control transistor, the gate of the third width control transistor receives a first voltage through the second capacitor. A regulating transistor, with a source coupled to the first capacitor and a drain coupled to the second capacitor, the first voltage is provided to the sweep signal through the regulating transistor.

Description

用於控制顯示面板的像素的控制電路 Control circuit used to control the pixels of a display panel

本揭示關於一種電子電路,特別有關於一種應用於顯示面板的控制電路。 This disclosure relates to an electronic circuit, and in particular to a control circuit for use in a display panel.

隨著半導體技術的演進,顯示面板的尺寸日益增加,且顯示面板的像素之解析度亦大幅提升。當顯示面板的像素顯示灰階亮度時,為了達到使用者的良好觀看體驗,顯示面板的不同區域的像素的亮度必須具有均勻性(uniformity)。此外,亦須避免相鄰區域的像素之間的串音(cross-talk)干擾。 With the development of semiconductor technology, the size of display panels is increasing, and the resolution of pixels of display panels is also greatly improved. When the pixels of the display panel display grayscale brightness, in order to achieve a good viewing experience for users, the brightness of pixels in different areas of the display panel must be uniform. In addition, cross-talk interference between pixels in adjacent areas must also be avoided.

然而,當顯示面板的像素具有高解析度時,像素之間的距離縮小,且相鄰區域的像素共用訊號線。由於像素的控制電路中的電晶體的寄生電容效應,導致訊號線上傳輸的控制訊號發生擾動,導致相鄰區域的像素的發光期間的時間長度不一致,造成了串音干擾,亦破壞了像素亮度的均勻性。 However, when the pixels of the display panel have high resolution, the distance between pixels is reduced, and pixels in adjacent areas share signal lines. Due to the parasitic capacitance effect of the transistors in the pixel control circuit, the control signal transmitted on the signal line is disturbed, resulting in inconsistent duration of the luminescence period of pixels in adjacent areas, causing crosstalk interference and destroying the uniformity of pixel brightness.

針對於上述技術問題,本領域相關產業之技術人員係致力於改良像素的控制電路,期許能夠克服控制訊號的擾動,進而抑制串音干擾且改善像素亮度的均勻性。 In response to the above technical problems, technicians in the relevant industries in this field are committed to improving the pixel control circuit, hoping to overcome the disturbance of the control signal, thereby suppressing crosstalk interference and improving the uniformity of pixel brightness.

根據本揭示之一方面,提供一種控制電路,用於控制顯示面板的像素,控制電路包括幅度調變控制電路與寬度調變控制電路以及以下元件。第一寬度控制電晶體,接收寬度調變供給電壓。第二寬度控制電晶體,耦接於幅度調變控制電路。第三寬度控制電晶體,耦接於第一寬度控制電晶體與第二寬度控制電晶體之間。第一電容,耦接於第三寬度控制電晶體的閘極,第三寬度控制電晶體的閘極經由第一電容接收掃掠訊號。第二電容,耦接於第三寬度控制電晶體的閘極,第三寬度控制電晶體的閘極經由第二電容接收第一電壓。穩壓電晶體,穩壓電晶體的源極耦接於第一電容,穩壓電晶體的汲極耦接於第二電容,第一電壓經由穩壓電晶體提供至掃掠訊號。 According to one aspect of the present disclosure, a control circuit is provided for controlling pixels of a display panel, the control circuit including an amplitude modulation control circuit and a width modulation control circuit and the following elements. A first width control transistor receives a width modulation supply voltage. A second width control transistor is coupled to the amplitude modulation control circuit. A third width control transistor is coupled between the first width control transistor and the second width control transistor. A first capacitor is coupled to a gate of the third width control transistor, and the gate of the third width control transistor receives a sweep signal via the first capacitor. A second capacitor is coupled to a gate of the third width control transistor, and the gate of the third width control transistor receives a first voltage via the second capacitor. A voltage regulator transistor, the source of the voltage regulator transistor is coupled to the first capacitor, the drain of the voltage regulator transistor is coupled to the second capacitor, and the first voltage is provided to the sweep signal via the voltage regulator transistor.

透過閱讀以下圖式、詳細說明以及申請專利範圍,可見本揭示之其它方面以及優點。 Other aspects and advantages of the present disclosure may be seen by reading the following drawings, detailed descriptions and claims.

1000,2000:控制電路 1000,2000:Control circuit

3000:顯示面板 3000: Display panel

100,100a:寬度調變控制電路 100,100a: Width modulation control circuit

200:幅度調變控制電路 200: Amplitude modulation control circuit

300:發光單元 300: Light-emitting unit

I1:驅動電流 I1: driving current

310:發光二極體 310: LED

311:陽極 311: Yang pole

312:陰極 312: cathode

T01~T06:電晶體 T01~T06: Transistor

T1~T3:寬度控制電晶體 T1~T3: Width control transistor

T5:穩壓電晶體 T5: voltage regulator transistor

T4,T6:幅度控制電晶體 T4, T6: Amplitude control transistor

g1~g6,g01~g06:閘極 g1~g6,g01~g06: gate

d1~d6,d01~d06:汲極 d1~d6,d01~d06: drain

s1~s6,s01~s06:源極 s1~s6,s01~s06: source

C1:電容 C1: Capacitor

C2:電容 C2: Capacitor

C3:電容 C3: Capacitor

Cgd:寄生電容 Cgd: parasitic capacitance

SWEEP,SWEEP_A:掃掠訊號 SWEEP, SWEEP_A: sweep signal

SWEEP_B,SWEEP_C:掃掠訊號 SWEEP_B, SWEEP_C: sweep signal

V_GH:第一電壓 V_GH: first voltage

V_GL:第二電壓 V_GL: Second voltage

VSS:接地電壓 VSS: ground voltage

V1:電壓 V1: voltage

V0:下限電壓 V0: Lower limit voltage

Vd3,Vg3,Vg4:電壓 Vd3, Vg3, Vg4: voltage

VDD_PWM:寬度調變供給電壓 VDD_PWM: Width modulation supply voltage

VDD_PAM:幅度調變供給電壓 VDD_PAM: Amplitude modulation supply voltage

EPWM:寬度調變控制訊號 EPWM: width modulation control signal

V_PAM:幅度調變控制訊號 V_PAM: amplitude modulation control signal

S_1:補償控制訊號 S_1: Compensation control signal

V_sig:控制訊號 V_sig: control signal

VSET:設定訊號 VSET: Setting signal

ESET:設定訊號 ESET: Setting signal

S_0:控制訊號 S_0: control signal

t1,t2,t3,t3_A,t3_B,t4:時間點 t1,t2,t3,t3_A,t3_B,t4: time points

ET,ET_A,ET_B:發光期間 ET,ET_A,ET_B: Luminescence period

A,B,C:區域 A,B,C: Area

第1圖是本揭示一實施例之控制電路的方塊圖。 Figure 1 is a block diagram of a control circuit of an embodiment of the present disclosure.

第2圖是第1圖的寬度調變控制電路的電路圖。 Figure 2 is the circuit diagram of the width modulation control circuit in Figure 1.

第3圖是第1圖的幅度調變控制電路的電路圖。 Figure 3 is the circuit diagram of the amplitude modulation control circuit in Figure 1.

第4圖是第1圖的控制電路之一部分的電路圖。 Figure 4 is a circuit diagram of a portion of the control circuit in Figure 1.

第5圖是第4圖的控制電路之部分訊號的時序變化的波形圖。 Figure 5 is a waveform diagram showing the timing changes of some signals in the control circuit of Figure 4.

第6圖是一比較例的控制電路之一部分的電路圖。 Figure 6 is a circuit diagram of a portion of a control circuit of a comparative example.

第7圖是第6圖的控制電路之部分訊號的時序變化的波形圖。 Figure 7 is a waveform diagram showing the timing changes of some signals in the control circuit of Figure 6.

第8圖是第6圖的比較例的控制電路應用於相鄰區域的像素的示意圖。 Figure 8 is a schematic diagram of the control circuit of the comparative example of Figure 6 applied to pixels in adjacent areas.

第9A~9C圖分別是第8圖的三個區域之像素各自的控制電路之掃掠訊號的時序變化的波形圖。 Figures 9A to 9C are waveform diagrams of the timing changes of the scanning signals of the control circuits of the pixels in the three regions of Figure 8.

第10A~10D圖分別是第8圖的三個區域之像素各自的控制電路之掃掠訊號、電晶體的閘極的電壓、及驅動電流之波形的比較圖。 Figures 10A to 10D are comparison diagrams of the waveforms of the sweep signal of the control circuit, the gate voltage of the transistor, and the drive current of the pixels in the three regions of Figure 8.

第11A~11C圖分別是本揭示的控制電路應用於三個區域的掃掠訊號的時序變化的波形圖。 Figures 11A to 11C are waveform diagrams of the timing changes of the sweep signal when the control circuit disclosed in this disclosure is applied to three regions.

第12A~12D圖分別是本揭示的控制電路應用於三個區域時,掃掠訊號、電晶體的閘極的電壓、及驅動電流之波形的比較圖。 Figures 12A to 12D are comparison diagrams of the waveforms of the sweep signal, the gate voltage of the transistor, and the drive current when the control circuit disclosed in this disclosure is applied to three regions.

本說明書的技術用語係參照本技術領域之習慣用語,如本說明書對部分用語有加以說明或定義,該部分用語之解釋係以本說明書之說明或定義為準。本揭示之各個實施例分別具有一或多個技術特徵。在可能實施的前提下,本技術領域具有通常知識者可選擇性地實施任一實施例中部分或全部的技術特徵,或者選擇性地將這些實施例中部分或全部的技術特徵加以組合。 The technical terms in this specification refer to the customary terms in this technical field. If this specification explains or defines some terms, the interpretation of these terms shall be based on the explanation or definition in this specification. Each embodiment disclosed in this disclosure has one or more technical features. Under the premise of possible implementation, a person with ordinary knowledge in this technical field can selectively implement some or all of the technical features in any embodiment, or selectively combine some or all of the technical features in these embodiments.

第1圖是本揭示一實施例之控制電路1000的方塊圖。控制電路1000用於控制顯示面板的像素的灰階亮度。如第1圖所示,控制電路1000包括寬度調變控制電路100及幅度調變控制電路200,控制電路1000用於控制發光單元300的亮度。發光單元300作為顯示面板的一個像素。更具體而言,寬度調變控制電路100用於執行脈衝寬度調變(pulse width modulation,PWM),幅度調變控制電路200用於執行脈衝幅度調變(pulse amplitude modulation,PAM)。控制電路1000根據脈衝寬度調變及脈衝幅度調變來調整發光單元300的亮度。 FIG. 1 is a block diagram of a control circuit 1000 of an embodiment of the present disclosure. The control circuit 1000 is used to control the grayscale brightness of a pixel of a display panel. As shown in FIG. 1, the control circuit 1000 includes a width modulation control circuit 100 and an amplitude modulation control circuit 200, and the control circuit 1000 is used to control the brightness of a light-emitting unit 300. The light-emitting unit 300 is a pixel of the display panel. More specifically, the width modulation control circuit 100 is used to perform pulse width modulation (PWM), and the amplitude modulation control circuit 200 is used to perform pulse amplitude modulation (PAM). The control circuit 1000 adjusts the brightness of the light-emitting unit 300 according to the pulse width modulation and the pulse amplitude modulation.

寬度調變控制電路100接收掃掠訊號SWEEP、第一電壓V_GH、寬度調變供給電壓VDD_PWM、寬度調變控制訊號EPWM、補償控制訊號S_1、控制訊號V_sig、設定訊號VSET、設定訊號ESET與控制訊號S_0。第一電壓V_GH表示邏輯高電位或閘極高電位,第一電壓V_GH例如是10V。寬度調變供給電壓VDD_PWM例如是10V。 The width modulation control circuit 100 receives a sweep signal SWEEP, a first voltage V_GH, a width modulation supply voltage VDD_PWM, a width modulation control signal EPWM, a compensation control signal S_1, a control signal V_sig, a setting signal VSET, a setting signal ESET and a control signal S_0. The first voltage V_GH represents a logic high potential or a gate high potential, and the first voltage V_GH is, for example, 10V. The width modulation supply voltage VDD_PWM is, for example, 10V.

幅度調變控制電路200接收幅度調變供給電壓VDD_PAM、幅度調變控制訊號V_PAM。幅度調變供給電壓VDD_PAM例如是10V。並且,幅度調變控制電路200產生驅動電流I1,驅動電流I1提供至發光單元300。 The amplitude modulation control circuit 200 receives the amplitude modulation supply voltage VDD_PAM and the amplitude modulation control signal V_PAM. The amplitude modulation supply voltage VDD_PAM is, for example, 10V. In addition, the amplitude modulation control circuit 200 generates a driving current I1, which is provided to the light-emitting unit 300.

發光單元300作為顯示面板的一個像素,發光單元300例如是發光二極體310。發光二極體310的陽極311耦接於幅度調變控制電路200以接收驅動電流I1,發光二極體310的陰 極312耦接於接地電壓VSS。接地電壓VSS例如是0V。發光二極體310例如是微發光二極體(Micro-LED)。 The light-emitting unit 300 is a pixel of the display panel, and the light-emitting unit 300 is, for example, a light-emitting diode 310. The anode 311 of the light-emitting diode 310 is coupled to the amplitude modulation control circuit 200 to receive the driving current I1, and the cathode 312 of the light-emitting diode 310 is coupled to the ground voltage VSS. The ground voltage VSS is, for example, 0V. The light-emitting diode 310 is, for example, a micro-light-emitting diode (Micro-LED).

寬度調變控制電路100執行脈衝寬度調變以控制驅動電流I1的持續時間,幅度調變控制電路200執行脈衝幅度調變以控制驅動電流I1的電流量。藉由調整驅動電流I1的持續時間與電流量,控制電路1000可調整發光單元300的亮度。例如,發光單元300的亮度正相關於驅動電流I1的持續時間與電流量。當驅動電流I1的持續時間較長或電流量較大時,發光單元300具有較高的亮度。 The width modulation control circuit 100 performs pulse width modulation to control the duration of the driving current I1, and the amplitude modulation control circuit 200 performs pulse amplitude modulation to control the current amount of the driving current I1. By adjusting the duration and current amount of the driving current I1, the control circuit 1000 can adjust the brightness of the light-emitting unit 300. For example, the brightness of the light-emitting unit 300 is directly related to the duration and current amount of the driving current I1. When the duration of the driving current I1 is longer or the current amount is larger, the light-emitting unit 300 has a higher brightness.

第2圖是第1圖的寬度調變控制電路100的電路圖。如第2圖所示,寬度調變控制電路100包括寬度控制電晶體T1、寬度控制電晶體T2、寬度控制電晶體T3、穩壓電晶體T5、電晶體T01~T04、電容C1、電容C2及電容C3。在本實施例中,寬度控制電晶體T1、寬度控制電晶體T2、寬度控制電晶體T3、穩壓電晶體T5及電晶體T01~T04皆為P型金氧半導體電晶體,簡稱PMOS電晶體。 FIG. 2 is a circuit diagram of the width modulation control circuit 100 of FIG. 1. As shown in FIG. 2, the width modulation control circuit 100 includes a width control transistor T1, a width control transistor T2, a width control transistor T3, a voltage regulator transistor T5, transistors T01 to T04, a capacitor C1, a capacitor C2, and a capacitor C3. In this embodiment, the width control transistor T1, the width control transistor T2, the width control transistor T3, the voltage regulator transistor T5, and the transistors T01 to T04 are all P-type metal oxide semiconductor transistors, referred to as PMOS transistors.

寬度控制電晶體T1的源極s1耦接於供給電壓源(第2圖未顯示供給電壓源),寬度控制電晶體T1的源極s1從供給電壓源接收寬度調變供給電壓VDD_PWM。寬度控制電晶體T1的閘極g1接收寬度調變控制訊號EPWM。寬度控制電晶體T1的汲極d1耦接於電晶體T01的源極s01,寬度控制電晶體T1的汲極d1經由電晶體T01接收控制訊號V_sig。 The source s1 of the width control transistor T1 is coupled to the supply voltage source (the supply voltage source is not shown in Figure 2), and the source s1 of the width control transistor T1 receives the width modulation supply voltage VDD_PWM from the supply voltage source. The gate g1 of the width control transistor T1 receives the width modulation control signal EPWM. The drain d1 of the width control transistor T1 is coupled to the source s01 of the transistor T01, and the drain d1 of the width control transistor T1 receives the control signal V_sig through the transistor T01.

寬度控制電晶體T3設置於寬度控制電晶體T1與寬度控制電晶體T2之間。寬度控制電晶體T3的源極s3耦接於寬度控制電晶體T1的汲極d1,寬度控制電晶體T3的汲極d3耦接於寬度控制電晶體T2的源極s2,寬度控制電晶體T3的閘極g3耦接於電容C1。寬度控制電晶體T3的閘極g3經由電容C1接收掃掠訊號SWEEP。 The width control transistor T3 is disposed between the width control transistor T1 and the width control transistor T2. The source s3 of the width control transistor T3 is coupled to the drain d1 of the width control transistor T1, the drain d3 of the width control transistor T3 is coupled to the source s2 of the width control transistor T2, and the gate g3 of the width control transistor T3 is coupled to the capacitor C1. The gate g3 of the width control transistor T3 receives the sweep signal SWEEP through the capacitor C1.

寬度控制電晶體T2的源極s2耦接於寬度控制電晶體T3的汲極d3以及電晶體T02的源極s02。寬度控制電晶體T2的閘極g2接收寬度調變控制訊號EPWM。寬度控制電晶體T2的汲極d2耦接於電晶體T04的源極s04,且寬度控制電晶體T2的汲極d2耦接於幅度調變控制電路200(第2圖未顯示幅度調變控制電路200)。 The source s2 of the width control transistor T2 is coupled to the drain d3 of the width control transistor T3 and the source s02 of the transistor T02. The gate g2 of the width control transistor T2 receives the width modulation control signal EPWM. The drain d2 of the width control transistor T2 is coupled to the source s04 of the transistor T04, and the drain d2 of the width control transistor T2 is coupled to the amplitude modulation control circuit 200 (the amplitude modulation control circuit 200 is not shown in FIG. 2).

穩壓電晶體T5的源極s5耦接於電容C1。穩壓電晶體T5的閘極g5耦接於電晶體T01的閘極g01與電晶體T02的閘極g02。穩壓電晶體T5的閘極g5、電晶體T01的閘極g01與電晶體T02的閘極g02都接收補償控制訊號S_1。穩壓電晶體T5的汲極d5接收第一電壓V_GH。在一種示例中,穩壓電晶體T5的汲極d5耦接於內部電路的節點或電壓源,以接收內部電路提供的固定電壓。例如,穩壓電晶體T5的汲極d5耦接於內部的閘極驅動器陣列(Gate Driver on Array,GOA)以接收閘極驅動器陣列提供的第一電壓V_GH。 The source s5 of the voltage regulator transistor T5 is coupled to the capacitor C1. The gate g5 of the voltage regulator transistor T5 is coupled to the gate g01 of the transistor T01 and the gate g02 of the transistor T02. The gate g5 of the voltage regulator transistor T5, the gate g01 of the transistor T01 and the gate g02 of the transistor T02 all receive the compensation control signal S_1. The drain d5 of the voltage regulator transistor T5 receives the first voltage V_GH. In one example, the drain d5 of the voltage regulator transistor T5 is coupled to a node or a voltage source of an internal circuit to receive a fixed voltage provided by the internal circuit. For example, the drain d5 of the voltage regulator transistor T5 is coupled to the internal gate driver array (Gate Driver on Array, GOA) to receive the first voltage V_GH provided by the gate driver array.

電晶體T02的閘極g02耦接於電晶體T01的閘極 g01並且接收補償控制訊號S_1。電晶體T02的汲極d02耦接於電晶體T03的源極s03、電容C1與電容C2。電晶體T02的源極s02耦接於寬度控制電晶體T2的源極s2。 The gate g02 of transistor T02 is coupled to the gate g01 of transistor T01 and receives the compensation control signal S_1. The drain d02 of transistor T02 is coupled to the source s03 of transistor T03, capacitor C1 and capacitor C2. The source s02 of transistor T02 is coupled to the source s2 of the width control transistor T2.

電晶體T03的閘極g03耦接於電晶體T03的汲極d03並且接收控制訊號S_0。電晶體T04的源極s04耦接於寬度控制電晶體T2的汲極d2,電晶體T04的閘極g04接收設定訊號ESET,電晶體T04的汲極d04接收設定訊號VSET。 The gate g03 of transistor T03 is coupled to the drain d03 of transistor T03 and receives the control signal S_0. The source s04 of transistor T04 is coupled to the drain d2 of the width control transistor T2, the gate g04 of transistor T04 receives the setting signal ESET, and the drain d04 of transistor T04 receives the setting signal VSET.

電容C1的一端耦接於穩壓電晶體T5的源極s5並且接收掃掠訊號SWEEP,電容C1的另一端耦接於寬度控制電晶體T3的閘極g3與電容C2。電容C2的一端耦接於穩壓電晶體T5的汲極d5並且接收第一電壓V_GH,電容C2的另一端耦接於寬度控制電晶體T3的閘極g3以及電容C1。電容C3的一端耦接於電晶體T04的源極s04,電容C3的另一端耦接於電晶體T04的汲極d04。 One end of capacitor C1 is coupled to the source s5 of voltage regulator transistor T5 and receives the sweep signal SWEEP, and the other end of capacitor C1 is coupled to the gate g3 of width control transistor T3 and capacitor C2. One end of capacitor C2 is coupled to the drain d5 of voltage regulator transistor T5 and receives the first voltage V_GH, and the other end of capacitor C2 is coupled to the gate g3 of width control transistor T3 and capacitor C1. One end of capacitor C3 is coupled to the source s04 of transistor T04, and the other end of capacitor C3 is coupled to the drain d04 of transistor T04.

第3圖是第1圖的幅度調變控制電路200的電路圖。如第3圖所示,幅度調變控制電路200包括幅度控制電晶體T4、幅度控制電晶體T6、電晶體T05及電晶體T06。在本實施例中,幅度控制電晶體T4、幅度控制電晶體T6、電晶體T05及電晶體T06皆為PMOS電晶體。 FIG. 3 is a circuit diagram of the amplitude modulation control circuit 200 of FIG. 1. As shown in FIG. 3, the amplitude modulation control circuit 200 includes an amplitude control transistor T4, an amplitude control transistor T6, a transistor T05, and a transistor T06. In this embodiment, the amplitude control transistor T4, the amplitude control transistor T6, the transistor T05, and the transistor T06 are all PMOS transistors.

幅度控制電晶體T4的閘極g4耦接於寬度調變控制電路100(第3圖未顯示寬度調變控制電路100)。幅度控制電晶體T4的源極s4耦接於幅度控制電晶體T6的汲極d6。 The gate g4 of the amplitude control transistor T4 is coupled to the width modulation control circuit 100 (the width modulation control circuit 100 is not shown in FIG. 3). The source s4 of the amplitude control transistor T4 is coupled to the drain d6 of the amplitude control transistor T6.

幅度控制電晶體T6的閘極g6接收幅度調變控制訊號V_PAM,幅度控制電晶體T6的源極s6耦接於電晶體T06的汲極d06。 The gate g6 of the amplitude control transistor T6 receives the amplitude modulation control signal V_PAM, and the source s6 of the amplitude control transistor T6 is coupled to the drain d06 of the transistor T06.

電晶體T05的汲極d05耦接於發光單元300。在本實施例中,電晶體T05的汲極d05耦接於發光單元300的二極體310的陽極311。電晶體T05的源極s05耦接於幅度控制電晶體T4的汲極d4。幅度控制電晶體T4的汲極d4提供驅動電流I1,驅動電流I1經由電晶體T05傳送至二極體310。 The drain d05 of the transistor T05 is coupled to the light-emitting unit 300. In this embodiment, the drain d05 of the transistor T05 is coupled to the anode 311 of the diode 310 of the light-emitting unit 300. The source s05 of the transistor T05 is coupled to the drain d4 of the amplitude control transistor T4. The drain d4 of the amplitude control transistor T4 provides a driving current I1, and the driving current I1 is transmitted to the diode 310 through the transistor T05.

電晶體T06的源極s06耦接於另一個供給電壓源(第3圖未顯示此供給電壓源),電晶體T06的源極s06從此供給電壓源接收幅度調變供給電壓VDD_PAM。 The source s06 of transistor T06 is coupled to another supply voltage source (this supply voltage source is not shown in FIG. 3 ), and the source s06 of transistor T06 receives the amplitude modulated supply voltage VDD_PAM from this supply voltage source.

第4圖是第1圖的控制電路1000之一部分的電路圖。第4圖繪示了第2圖的寬度調變控制電路100之一部分與第3圖的幅度調變控制電路200之一部分。第5圖是第4圖的控制電路1000之部分訊號的時序變化的波形圖。控制電路1000可操作於不同的工作階段以控制發光單元300的發光,控制電路1000的工作階段例如包括補償(compensation)階段與發光(emission)階段。 FIG. 4 is a circuit diagram of a portion of the control circuit 1000 of FIG. 1. FIG. 4 shows a portion of the width modulation control circuit 100 of FIG. 2 and a portion of the amplitude modulation control circuit 200 of FIG. 3. FIG. 5 is a waveform diagram of the timing change of a portion of the signal of the control circuit 1000 of FIG. 4. The control circuit 1000 can be operated in different working stages to control the light emission of the light-emitting unit 300. The working stages of the control circuit 1000 include, for example, a compensation stage and an emission stage.

請同時參見第4、5圖,從時間點t1到時間點t2的期間,控制電路1000操作於補償階段。從時間點t2到時間點t4的期間,控制電路1000操作於發光階段。 Please refer to Figures 4 and 5 at the same time. From time point t1 to time point t2, the control circuit 1000 operates in the compensation stage. From time point t2 to time point t4, the control circuit 1000 operates in the light-emitting stage.

首先,當控制電路1000操作於補償階段時,補償控 制訊號S_1的電壓從第一電壓V_GH降低為第二電壓V_GL。第一電壓V_GH是較高的電壓,第二電壓V_GL是較低的電壓,第一電壓V_GH高於第二電壓V_GL。第一電壓V_GH例如是10V,第二電壓V_GL例如是0V。並且,控制訊號V_sig的電壓從第二電壓V_GL逐漸增加為第一電壓V_GH。掃掠訊號SWEEP的電壓維持為第一電壓V_GH。 First, when the control circuit 1000 operates in the compensation stage, the voltage of the compensation control signal S_1 is reduced from the first voltage V_GH to the second voltage V_GL. The first voltage V_GH is a higher voltage, the second voltage V_GL is a lower voltage, and the first voltage V_GH is higher than the second voltage V_GL. The first voltage V_GH is, for example, 10V, and the second voltage V_GL is, for example, 0V. In addition, the voltage of the control signal V_sig gradually increases from the second voltage V_GL to the first voltage V_GH. The voltage of the sweep signal SWEEP is maintained at the first voltage V_GH.

電晶體T01的閘極g01接收補償控制訊號S_1。電晶體T01因應於補償控制訊號S_1而導通(即,開啟(turned ON))或截止(即,關閉(turned OFF))。在補償階段,補償控制訊號S_1的電壓降低為第二電壓V_GL,電晶體T01是PMOS電晶體,因此電晶體T01為導通。控制訊號V_sig經由導通的電晶體T01傳送至寬度控制電晶體T3的源極s3。 The gate g01 of transistor T01 receives the compensation control signal S_1. Transistor T01 is turned on (i.e., turned ON) or turned off (i.e., turned OFF) in response to the compensation control signal S_1. In the compensation stage, the voltage of the compensation control signal S_1 is reduced to the second voltage V_GL. Transistor T01 is a PMOS transistor, so transistor T01 is turned on. The control signal V_sig is transmitted to the source s3 of the width control transistor T3 through the turned-on transistor T01.

寬度控制電晶體T3的閘極g3經由電容C1接收掃掠訊號SWEEP,寬度控制電晶體T3的源極s3經由導通的電晶體T01接收控制訊號V_sig。寬度控制電晶體T3因應於掃掠訊號SWEEP與控制訊號V_sig的電壓變化而導通或截止。當寬度控制電晶體T3的源極s3與閘極g3之間的電壓差Vsg3大於寬度控制電晶體T3的臨界電壓Vth3時,寬度控制電晶體T3為導通。 The gate g3 of the width control transistor T3 receives the sweep signal SWEEP through the capacitor C1, and the source s3 of the width control transistor T3 receives the control signal V_sig through the turned-on transistor T01. The width control transistor T3 is turned on or off in response to the voltage changes of the sweep signal SWEEP and the control signal V_sig. When the voltage difference Vsg3 between the source s3 and the gate g3 of the width control transistor T3 is greater than the critical voltage Vth3 of the width control transistor T3, the width control transistor T3 is turned on.

另一方面,當寬度調變控制訊號EPWM的電壓是第二電壓V_GL時,寬度控制電晶體T1與寬度控制電晶體T2為導通。當寬度控制電晶體T1、T2與T3皆為導通時,可對於幅度控制電晶體T4的閘極g4進行充電,使幅度控制電晶體T4的閘極g4 的電壓Vg4逐漸增加。例如,在時間點t2,閘極g4的電壓Vg4增加至寬度調變供給電壓VDD_PWM。 On the other hand, when the voltage of the width modulation control signal EPWM is the second voltage V_GL, the width control transistor T1 and the width control transistor T2 are turned on. When the width control transistors T1, T2 and T3 are all turned on, the gate g4 of the amplitude control transistor T4 can be charged, so that the voltage Vg4 of the gate g4 of the amplitude control transistor T4 gradually increases. For example, at time point t2, the voltage Vg4 of the gate g4 increases to the width modulation supply voltage VDD_PWM.

並且,閘極g4的電壓Vg4經由導通的寬度控制電晶體T2傳送至寬度控制電晶體T3的汲極d3,因此,寬度控制電晶體T3的汲極d3的電壓Vd3亦隨之增加。例如,在時間點t2,汲極d3的電壓Vd3增加至寬度調變供給電壓VDD_PWM。 Furthermore, the voltage Vg4 of the gate g4 is transmitted to the drain d3 of the width control transistor T3 through the turned-on width control transistor T2, so the voltage Vd3 of the drain d3 of the width control transistor T3 also increases accordingly. For example, at time point t2, the voltage Vd3 of the drain d3 increases to the width modulation supply voltage VDD_PWM.

寬度控制電晶體T3的閘極g3與汲極d3之間具有寄生電容Cgd,因此電壓Vd3的變化可能經由寄生電容Cgd反映於閘極g3的電壓Vg3,致使電壓Vg3在時間點t1到時間點t2的期間發生擾動。並且,電壓Vg3的變化可能經由電容C1反映於掃掠訊號SWEEP的電壓,導致掃掠訊號SWEEP發生擾動。 There is a parasitic capacitor Cgd between the gate g3 and the drain d3 of the width control transistor T3, so the change of the voltage Vd3 may be reflected in the voltage Vg3 of the gate g3 through the parasitic capacitor Cgd, causing the voltage Vg3 to fluctuate during the period from time point t1 to time point t2. In addition, the change of the voltage Vg3 may be reflected in the voltage of the sweep signal SWEEP through the capacitor C1, causing the sweep signal SWEEP to fluctuate.

本實施例的控制電路1000設置了穩壓電晶體T5。穩壓電晶體T5的閘極g5接收補償控制訊號S_1,穩壓電晶體T5因應於補償控制訊號S_1而導通或截止。在補償階段,補償控制訊號S_1的電壓是第二電壓V_GL,穩壓電晶體T5是PMOS電晶體,因此穩壓電晶體T5為導通。穩壓電晶體T5的源極s5耦接於掃掠訊號SWEEP,穩壓電晶體T5的汲極d5耦接於第一電壓V_GH。第一電壓V_GH經由導通的穩壓電晶體T5傳送至掃掠訊號SWEEP,以將掃掠訊號SWEEP的電壓穩定維持於第一電壓V_GH。上述機制稱為「掃掠訊號的穩定維持(sweep holding)」,將掃掠訊號SWEEP的電壓穩定維持於內部的閘極驅動器陣列提供的第一電壓V_GH。 The control circuit 1000 of the present embodiment is provided with a voltage regulator transistor T5. The gate g5 of the voltage regulator transistor T5 receives the compensation control signal S_1, and the voltage regulator transistor T5 is turned on or off in response to the compensation control signal S_1. In the compensation stage, the voltage of the compensation control signal S_1 is the second voltage V_GL, and the voltage regulator transistor T5 is a PMOS transistor, so the voltage regulator transistor T5 is turned on. The source s5 of the voltage regulator transistor T5 is coupled to the sweep signal SWEEP, and the drain d5 of the voltage regulator transistor T5 is coupled to the first voltage V_GH. The first voltage V_GH is transmitted to the sweep signal SWEEP through the turned-on voltage regulator transistor T5 to stably maintain the voltage of the sweep signal SWEEP at the first voltage V_GH. The above mechanism is called "sweep holding", which stably maintains the voltage of the sweep signal SWEEP at the first voltage V_GH provided by the internal gate driver array.

而後,從時間點t2到時間點t4的期間,控制電路1000操作於發光階段,掃掠訊號SWEEP的電壓逐漸降低。掃掠訊號SWEEP經由電容C1傳送至寬度控制電晶體T3的閘極g3,寬度控制電晶體T3因應於掃掠訊號SWEEP的電壓變化而導通或截止。當寬度控制電晶體T3為導通時,可對於幅度控制電晶體T4的閘極g4進行充電以增加閘極g4的電壓Vg4。從時間點t2到時間點t3的期間,幅度控制電晶體T4為導通,幅度控制電晶體T4的汲極d4提供驅動電流I1,驅動電流I1經由電晶體T05傳送至發光單元300,發光單元300因應於驅動電流I1而發光。 Then, from time point t2 to time point t4, the control circuit 1000 operates in the light-emitting stage, and the voltage of the sweep signal SWEEP gradually decreases. The sweep signal SWEEP is transmitted to the gate g3 of the width control transistor T3 via the capacitor C1, and the width control transistor T3 is turned on or off in response to the voltage change of the sweep signal SWEEP. When the width control transistor T3 is turned on, the gate g4 of the amplitude control transistor T4 can be charged to increase the voltage Vg4 of the gate g4. From time point t2 to time point t3, the amplitude control transistor T4 is turned on, and the drain d4 of the amplitude control transistor T4 provides a driving current I1, which is transmitted to the light-emitting unit 300 via the transistor T05. The light-emitting unit 300 emits light in response to the driving current I1.

在時間點t3,掃掠訊號SWEEP的電壓降低至下限電壓V0,幅度控制電晶體T4的閘極g4的電壓Vg4增加至較高的電壓,幅度控制電晶體T4為截止。在時間點t3,幅度調變控制電路200停止提供驅動電流I1至發光單元300,發光單元300停止發光。在發光階段之中,發光單元300實際進行發光的發光期間ET是介於時間點t2與時間點t3之間。 At time point t3, the voltage of the sweep signal SWEEP drops to the lower limit voltage V0, the voltage Vg4 of the gate g4 of the amplitude control transistor T4 increases to a higher voltage, and the amplitude control transistor T4 is cut off. At time point t3, the amplitude modulation control circuit 200 stops providing the driving current I1 to the light-emitting unit 300, and the light-emitting unit 300 stops emitting light. In the light-emitting stage, the light-emitting period ET during which the light-emitting unit 300 actually emits light is between time point t2 and time point t3.

本實施例的控制電路1000設置了電容C2。當控制電路1000操作於發光階段時,可藉由電容C2減少寬度控制電晶體T3的寄生電容Cgd的耦合量,據以減少寬度控制電晶體T3的汲極d3的電壓Vd3的變化對於閘極g3的電壓Vg3的影響,進而減少掃掠訊號SWEEP的擾動。 The control circuit 1000 of this embodiment is provided with a capacitor C2. When the control circuit 1000 operates in the light-emitting stage, the coupling amount of the parasitic capacitance Cgd of the width control transistor T3 can be reduced by the capacitor C2, thereby reducing the influence of the change of the voltage Vd3 of the drain d3 of the width control transistor T3 on the voltage Vg3 of the gate g3, thereby reducing the disturbance of the sweep signal SWEEP.

更具體而言,電容C2與電容C1提供寬度控制電晶體T3的寄生電容Cgd的分壓。電容C2藉由分壓方式以減少寬度 控制電晶體T3的寄生電容Cgd對於閘極g3的電壓Vg3的耦合量。當尚未設置電容C2時,僅由電容C1進行分壓,分壓比例為

Figure 112115133-A0305-02-0015-1
。寬度控制電晶體T3的閘極g3的電壓Vg3的變化量△V是 正相關於分壓比例
Figure 112115133-A0305-02-0015-3
,如式(1)所示:
Figure 112115133-A0305-02-0015-4
More specifically, capacitor C2 and capacitor C1 provide voltage division for parasitic capacitance Cgd of width control transistor T3. Capacitor C2 reduces the coupling of parasitic capacitance Cgd of width control transistor T3 to voltage Vg3 of gate g3 by voltage division. When capacitor C2 is not set, only capacitor C1 performs voltage division, and the voltage division ratio is
Figure 112115133-A0305-02-0015-1
The change △V of the gate voltage Vg3 of the width control transistor T3 is positively correlated with the voltage division ratio
Figure 112115133-A0305-02-0015-3
, as shown in formula (1):
Figure 112115133-A0305-02-0015-4

在第4圖的實施例中,在寬度控制電晶體T3的閘極g3與穩壓電晶體T5的汲極d5之間增設電容C2。藉由電容C1與電容C2進行分壓,分壓比例為

Figure 112115133-A0305-02-0015-5
。寬度控制電晶體T3的閘極g3的電壓Vg3的變化量△V如式(2)所示:
Figure 112115133-A0305-02-0015-6
In the embodiment of FIG. 4, a capacitor C2 is added between the gate g3 of the width control transistor T3 and the drain d5 of the voltage regulator transistor T5. The voltage is divided by the capacitors C1 and C2, and the voltage division ratio is
Figure 112115133-A0305-02-0015-5
The change △V of the voltage Vg3 of the gate g3 of the width control transistor T3 is shown in formula (2):
Figure 112115133-A0305-02-0015-6

增設電容C2後,分壓比例

Figure 112115133-A0305-02-0015-10
小於未設置電容 C2時的分壓比例
Figure 112115133-A0305-02-0015-9
。據此,可減少寄生電容Cgd對於閘極g3的電壓Vg3的耦合量,進而減少掃掠訊號SWEEP的擾動。 After adding capacitor C2, the voltage division ratio
Figure 112115133-A0305-02-0015-10
Less than the voltage division ratio when capacitor C2 is not set
Figure 112115133-A0305-02-0015-9
Accordingly, the coupling amount of the parasitic capacitance Cgd to the voltage Vg3 of the gate g3 can be reduced, thereby reducing the disturbance of the sweep signal SWEEP.

第6圖是一比較例的控制電路2000之一部分的電路圖。第6圖繪示了控制電路2000的寬度調變控制電路100a之一部分與幅度調變控制電路200之一部分。第7圖是第6圖的控制電路2000之部分訊號的時序變化的波形圖。 FIG. 6 is a circuit diagram of a portion of a control circuit 2000 of a comparative example. FIG. 6 shows a portion of a width modulation control circuit 100a and a portion of an amplitude modulation control circuit 200 of the control circuit 2000. FIG. 7 is a waveform diagram of the timing changes of a portion of the signal of the control circuit 2000 of FIG. 6.

請同時參見第6、7圖,相較於第4圖的本揭示的控 制電路1000,第6圖的比較例的寬度調變控制電路100a未設置穩壓電晶體T5與電容C2。在時間點t1到時間點t2的期間,對於幅度控制電晶體T4的閘極g4進行充電,使閘極g4的電壓Vg4逐漸增加,因此寬度控制電晶體T3的汲極d3的電壓Vd3亦隨之增加。汲極d3的電壓Vd3的變化經由寄生電容Cgd反映於閘極g3的電壓Vg3,並且電壓Vg3的變化經由電容C1反映於掃掠訊號SWEEP的電壓,導致掃掠訊號SWEEP發生擾動。 Please refer to Figures 6 and 7 at the same time. Compared with the control circuit 1000 of the present disclosure in Figure 4, the width modulation control circuit 100a of the comparative example in Figure 6 does not have the voltage regulator transistor T5 and the capacitor C2. During the period from time point t1 to time point t2, the gate g4 of the amplitude control transistor T4 is charged, so that the voltage Vg4 of the gate g4 gradually increases, so the voltage Vd3 of the drain d3 of the width control transistor T3 also increases accordingly. The change of the voltage Vd3 of the drain d3 is reflected in the voltage Vg3 of the gate g3 through the parasitic capacitor Cgd, and the change of the voltage Vg3 is reflected in the voltage of the sweep signal SWEEP through the capacitor C1, causing the sweep signal SWEEP to be disturbed.

由於第6圖的比較例的寬度調變控制電路100a未設置穩壓電晶體T5,也未將內部電路的固定電壓提供至掃掠訊號SWEEP,因此無法將掃掠訊號SWEEP穩定維持於第一電壓V_GH。如第7圖所示,掃掠訊號SWEEP在時間點t2增加為電壓V1。掃掠訊號SWEEP的電壓增加導致寬度控制電晶體T3與幅度控制電晶體T4的導通期間改變,進而導致發光單元300的發光期間ET的改變。發光期間ET的時間長度是相關於掃掠訊號SWEEP的電壓,當掃掠訊號SWEEP在時間點t2增加為電壓V1時,發光期間ET隨之增加。 Since the width modulation control circuit 100a of the comparative example of FIG. 6 does not have a voltage-stabilizing transistor T5, and does not provide a fixed voltage of the internal circuit to the sweep signal SWEEP, the sweep signal SWEEP cannot be stably maintained at the first voltage V_GH. As shown in FIG. 7, the sweep signal SWEEP increases to a voltage V1 at time t2. The increase in the voltage of the sweep signal SWEEP causes the conduction period of the width control transistor T3 and the amplitude control transistor T4 to change, thereby causing the light-emitting period ET of the light-emitting unit 300 to change. The duration of the luminescence period ET is related to the voltage of the sweep signal SWEEP. When the sweep signal SWEEP increases to the voltage V1 at time point t2, the luminescence period ET increases accordingly.

第8圖是第6圖的比較例的控制電路2000應用於相鄰區域的像素的示意圖。顯示面板3000包括彼此相鄰的區域A、區域B與區域C。區域B與區域C設置於顯示面板3000之中的相同水平列,區域A則設置於另一個水平列。區域B與區域C設置的水平列是相鄰於區域A設置的水平列。控制電路2000用於控制區域A的像素、區域B的像素與區域C的像素。 FIG. 8 is a schematic diagram of the control circuit 2000 of the comparative example of FIG. 6 being applied to pixels in adjacent regions. The display panel 3000 includes regions A, B, and C that are adjacent to each other. Regions B and C are arranged in the same horizontal row in the display panel 3000, and region A is arranged in another horizontal row. The horizontal row in which regions B and C are arranged is adjacent to the horizontal row in which region A is arranged. The control circuit 2000 is used to control the pixels in region A, the pixels in region B, and the pixels in region C.

第9A~9C圖分別是第8圖的區域A、區域B與區域C之像素各自的控制電路2000之掃掠訊號的時序變化的波形圖。當控制電路2000操作於補償階段時,汲極d3的電壓Vd3的變化經由寄生電容Cgd反映於閘極g3的電壓Vg3,並且電壓Vg3的變化經由電容C1反映於掃掠訊號的電壓,導致掃掠訊號發生擾動。如第9A圖所示,區域A之像素之掃掠訊號SWEEP_A受到汲極d3的電壓Vd3與閘極g3的電壓Vg3的影響程度較小,因此掃掠訊號SWEEP_A的擾動較小。例如,掃掠訊號SWEEP_A的電壓在時間點t2增加至電壓V1_A。區域A之像素的發光期間ET_A的時間長度是相關於掃掠訊號SWEEP_A的電壓,當掃掠訊號SWEEP_A在時間點t2增加至電壓V1_A時,發光期間ET_A的時間長度隨之增加。 Figures 9A to 9C are waveform diagrams of the timing changes of the sweep signal of the control circuit 2000 for the pixels in regions A, B, and C of Figure 8. When the control circuit 2000 operates in the compensation stage, the change of the voltage Vd3 of the drain d3 is reflected in the voltage Vg3 of the gate g3 via the parasitic capacitor Cgd, and the change of the voltage Vg3 is reflected in the voltage of the sweep signal via the capacitor C1, causing disturbance of the sweep signal. As shown in Figure 9A, the sweep signal SWEEP_A of the pixel in region A is less affected by the voltage Vd3 of the drain d3 and the voltage Vg3 of the gate g3, so the disturbance of the sweep signal SWEEP_A is smaller. For example, the voltage of the sweep signal SWEEP_A increases to the voltage V1_A at time point t2. The duration of the luminous period ET_A of the pixel in region A is related to the voltage of the sweep signal SWEEP_A. When the sweep signal SWEEP_A increases to the voltage V1_A at time point t2, the duration of the luminous period ET_A increases accordingly.

並且,如第9B圖所示,區域B之像素之掃掠訊號SWEEP_B受到汲極d3的電壓Vd3與閘極g3的電壓Vg3的影響程度較大,因此掃掠訊號SWEEP_B的擾動較大,例如,掃掠訊號SWEEP_B的電壓在時間點t2增加至電壓V1_B,電壓V1_B大於掃掠訊號SWEEP_A變化後的電壓V1_A。當掃掠訊號SWEEP_B在時間點t2增加至電壓V1_B時,區域B之像素的發光期間ET_B的時間長度隨之增加。 Moreover, as shown in FIG. 9B , the sweep signal SWEEP_B of the pixel in region B is more affected by the voltage Vd3 of the drain d3 and the voltage Vg3 of the gate g3, so the disturbance of the sweep signal SWEEP_B is greater. For example, the voltage of the sweep signal SWEEP_B increases to the voltage V1_B at the time point t2, and the voltage V1_B is greater than the voltage V1_A after the sweep signal SWEEP_A changes. When the sweep signal SWEEP_B increases to the voltage V1_B at the time point t2, the duration of the luminous period ET_B of the pixel in region B increases accordingly.

由於電壓V1_B大於電壓V1_A,區域B之像素的發光期間ET_B的時間長度大於區域A之像素的發光期間ET_A。區域B之像素的亮度大於區域A之像素的亮度。因此,導致區域 A與區域B的像素發生串音(crosstalk)及均勻度(uniformity)不佳的狀況。 Since the voltage V1_B is greater than the voltage V1_A, the duration of the luminescence period ET_B of the pixels in area B is greater than the luminescence period ET_A of the pixels in area A. The brightness of the pixels in area B is greater than the brightness of the pixels in area A. Therefore, the pixels in areas A and B have crosstalk and poor uniformity.

另一方面,在第9C圖中,對於區域C之像素的控制電路2000而言,掃掠訊號SWEEP_C在時間點t1從下限電壓V0逐漸降低。在時間點t1至時間點t4的期間區域C之像素不發光。 On the other hand, in FIG. 9C, for the control circuit 2000 of the pixel in region C, the sweep signal SWEEP_C gradually decreases from the lower limit voltage V0 at time point t1. The pixel in region C does not emit light during the period from time point t1 to time point t4.

第10A~10D圖分別是第8圖的區域A、區域B與區域C之像素各自的控制電路2000之掃掠訊號、電晶體的閘極的電壓、及驅動電流之波形的比較圖。如第10A圖所示,區域A之像素之掃掠訊號SWEEP_A的擾動較小,區域B之像素之掃掠訊號SWEEP_B的擾動較大。類似的,如第10B圖所示,應用於區域A之控制電路2000的寬度控制電晶體T3的閘極g3的電壓Vg3(A)的擾動較小,區域B之寬度控制電晶體T3的閘極g3的電壓Vg3(B)的擾動較大。 Figures 10A to 10D are comparison diagrams of the waveforms of the sweep signal of the control circuit 2000, the gate voltage of the transistor, and the driving current of the pixels in regions A, B, and C of Figure 8. As shown in Figure 10A, the perturbation of the sweep signal SWEEP_A of the pixel in region A is smaller, and the perturbation of the sweep signal SWEEP_B of the pixel in region B is larger. Similarly, as shown in FIG. 10B, the voltage Vg3(A) of the gate g3 of the width control transistor T3 of the control circuit 2000 applied to region A has a smaller disturbance, and the voltage Vg3(B) of the gate g3 of the width control transistor T3 of region B has a larger disturbance.

如第10C圖所示,區域A之幅度控制電晶體T4的閘極g4的電壓Vg4(A)的上升斜率與區域B之幅度控制電晶體T4的閘極g4的電壓Vg4(B)的上升斜率不一致,因此區域A與區域B各自的幅度控制電晶體T4的閘極g4的充電速度不一致,導致幅度控制電晶體T4導通或截止的時間不一致。 As shown in Figure 10C, the rising slope of the voltage Vg4(A) of the gate g4 of the amplitude control transistor T4 in region A is inconsistent with the rising slope of the voltage Vg4(B) of the gate g4 of the amplitude control transistor T4 in region B. Therefore, the charging speed of the gate g4 of the amplitude control transistor T4 in region A and region B is inconsistent, resulting in inconsistent turn-on or turn-off time of the amplitude control transistor T4.

如第10D圖所示,由於區域A與區域B各自的幅度控制電晶體T4導通或截止的時間不一致,導致區域A與區域B 各自的像素的驅動電流I1(A)與驅動電流I1(B)的電流量不一致。 As shown in Figure 10D, since the amplitude control transistor T4 of region A and region B is turned on or off at different times, the driving current I1(A) and driving current I1(B) of the pixels of region A and region B are inconsistent.

相對的,當本揭示的控制電路1000用於控制區域A、區域B與區域C之像素時,由於掃掠訊號SWEEP經由穩壓電晶體T5穩定維持於固定的第一電壓V_GH,且藉由電容C2減少寬度控制電晶體T3的寄生電容Cgd的耦合量,因此在補償階段與發光階段掃掠訊號SWEEP幾乎不會擾動。第11A~11C圖分別是本揭示的控制電路1000應用於區域A、區域B與區域C的掃掠訊號的時序變化的波形圖。如第11A圖所示,在時間點t1至時間點t2的期間,區域A之像素之掃掠訊號SWEEP_A穩定維持於第一電壓V_GH。同樣的,如第11B圖所示,在時間點t1至時間點t2的期間,區域B之像素之掃掠訊號SWEEP_B亦穩定維持於第一電壓V_GH。因此,區域A之像素的發光期間ET_A的時間長度大致相等於區域B之像素的發光期間ET_B的時間長度。 In contrast, when the control circuit 1000 disclosed in the present invention is used to control the pixels of regions A, B, and C, since the sweep signal SWEEP is stably maintained at a fixed first voltage V_GH through the voltage regulator transistor T5, and the coupling amount of the parasitic capacitance Cgd of the width control transistor T3 is reduced by the capacitor C2, the sweep signal SWEEP is almost not disturbed in the compensation phase and the light-emitting phase. Figures 11A to 11C are waveform diagrams of the timing changes of the sweep signal of the control circuit 1000 disclosed in the present invention applied to regions A, B, and C, respectively. As shown in FIG. 11A, during the period from time point t1 to time point t2, the sweep signal SWEEP_A of the pixel in region A is stably maintained at the first voltage V_GH. Similarly, as shown in FIG. 11B, during the period from time point t1 to time point t2, the sweep signal SWEEP_B of the pixel in region B is also stably maintained at the first voltage V_GH. Therefore, the duration of the luminescence period ET_A of the pixel in region A is roughly equal to the duration of the luminescence period ET_B of the pixel in region B.

第12A~12D圖分別是本揭示的控制電路1000應用於區域A、區域B與區域C時,掃掠訊號、電晶體的閘極的電壓、及驅動電流之波形的比較圖。如第12A圖所示,區域A與區域B之掃掠訊號SWEEP_A與掃掠訊號SWEEP_B的擾動都非常小,掃掠訊號SWEEP_A與掃掠訊號SWEEP_B的電壓變化大致相同。 Figures 12A to 12D are comparison diagrams of the waveforms of the sweep signal, the gate voltage of the transistor, and the driving current when the control circuit 1000 disclosed in the present invention is applied to regions A, B, and C. As shown in Figure 12A, the disturbances of the sweep signal SWEEP_A and the sweep signal SWEEP_B in regions A and B are very small, and the voltage changes of the sweep signal SWEEP_A and the sweep signal SWEEP_B are roughly the same.

類似的,如第12B圖所示,區域A與區域B之寬度控制電晶體T3的閘極g3的電壓Vg3(A)與電壓Vg3(B)的擾動都非常小,電壓Vg3(A)與電壓Vg3(B)的變化大致相同。 Similarly, as shown in FIG. 12B, the disturbances of the voltage Vg3(A) and the voltage Vg3(B) of the gate g3 of the width control transistor T3 in regions A and B are very small, and the changes of the voltage Vg3(A) and the voltage Vg3(B) are roughly the same.

如第12C圖所示,區域A與區域B之幅度控制電晶體T4的閘極g4的電壓Vg4(A)與電壓Vg4(B)的上升斜率大致相同,因此區域A與區域B各自的幅度控制電晶體T4的閘極g4的充電速度大致相同。 As shown in Figure 12C, the rising slopes of the voltage Vg4(A) and the voltage Vg4(B) of the gate g4 of the amplitude control transistor T4 in region A and region B are roughly the same, so the charging speeds of the gate g4 of the amplitude control transistor T4 in region A and region B are roughly the same.

如第12D圖所示,區域A與區域B各自的像素的驅動電流I1(A)與驅動電流I1(B)的電流量大致相同。因此,區域A與區域B各自的像素的亮度大致相同,有效地克服了串音與均勻度不佳的狀況。 As shown in Figure 12D, the currents of the driving currents I1(A) and I1(B) of the pixels in area A and area B are roughly the same. Therefore, the brightness of the pixels in area A and area B is roughly the same, effectively overcoming the problems of crosstalk and poor uniformity.

雖然本揭示已以較佳實施例及範例詳細揭示如上,可理解的是,此些範例意指說明而非限制之意義。可預期的是,所屬技術領域中具有通常知識者可想到多種修改及組合,其多種修改及組合落在本揭示之精神以及後附之申請專利範圍之範圍內。 Although the present disclosure has been disclosed in detail with preferred embodiments and examples, it is understood that these examples are intended to be illustrative rather than restrictive. It is expected that a person with ordinary knowledge in the relevant technical field can think of various modifications and combinations, and the various modifications and combinations fall within the spirit of the present disclosure and the scope of the attached patent application.

1000:控制電路 1000: Control circuit

100:寬度調變控制電路 100: Width modulation control circuit

200:幅度調變控制電路 200: Amplitude modulation control circuit

300:發光單元 300: Light-emitting unit

I1:驅動電流 I1: driving current

T01,T02,T05:電晶體 T01, T02, T05: Transistor

T1~T3:寬度控制電晶體 T1~T3: Width control transistor

T5:穩壓電晶體 T5: voltage regulator transistor

T4:幅度控制電晶體 T4: Amplitude control transistor

g01,g3,g4,g5:閘極 g01,g3,g4,g5: gate

d01,d3,d5:汲極 d01,d3,d5: drain

s01,s3,s5:源極 s01,s3,s5: source

C1:電容 C1: Capacitor

C2:電容 C2: Capacitor

Cgd:寄生電容 Cgd: parasitic capacitance

SWEEP:掃掠訊號 SWEEP: sweep signal

V_GH:第一電壓 V_GH: first voltage

VSS:接地電壓 VSS: ground voltage

VDD_PWM:寬度調變供給電壓 VDD_PWM: Width modulation supply voltage

EPWM:寬度調變控制訊號 EPWM: width modulation control signal

S_1:補償控制訊號 S_1: Compensation control signal

V_sig:控制訊號 V_sig: control signal

Claims (10)

一種控制電路,用於控制顯示面板的像素,該控制電路包括:一幅度調變控制電路;以及一寬度調變控制電路,包括:一第一寬度控制電晶體,接收一寬度調變供給電壓;一第二寬度控制電晶體,耦接於該幅度調變控制電路;一第三寬度控制電晶體,耦接於該第一寬度控制電晶體與該第二寬度控制電晶體之間;一第一電容,耦接於該第三寬度控制電晶體的一閘極,該第三寬度控制電晶體的該閘極經由該第一電容接收一掃掠訊號;一第二電容,耦接於該第三寬度控制電晶體的該閘極,該第三寬度控制電晶體的該閘極經由該第二電容接收一第一電壓;以及一穩壓電晶體,該穩壓電晶體的一源極耦接於該第一電容,該穩壓電晶體的一汲極耦接於該第二電容,該第一電壓經由該穩壓電晶體提供至該掃掠訊號。 A control circuit for controlling pixels of a display panel, the control circuit comprising: an amplitude modulation control circuit; and a width modulation control circuit, comprising: a first width control transistor, receiving a width modulation supply voltage; a second width control transistor, coupled to the amplitude modulation control circuit; a third width control transistor, coupled between the first width control transistor and the second width control transistor; a first capacitor, coupled to the third width control transistor A gate of the third width control transistor, the gate of the third width control transistor receives a sweep signal via the first capacitor; a second capacitor, coupled to the gate of the third width control transistor, the gate of the third width control transistor receives a first voltage via the second capacitor; and a voltage regulating transistor, a source of the voltage regulating transistor is coupled to the first capacitor, a drain of the voltage regulating transistor is coupled to the second capacitor, and the first voltage is provided to the sweep signal via the voltage regulating transistor. 如請求項1所述之控制電路,其中當該控制電路操作於一補償階段時,該穩壓電晶體因應於一補償控制訊號為導通,該掃掠訊號經由導通的該穩壓電晶體穩定維持於該第一電 壓。 A control circuit as described in claim 1, wherein when the control circuit operates in a compensation stage, the voltage-stabilizing transistor is turned on in response to a compensation control signal, and the sweep signal is stably maintained at the first voltage through the turned-on voltage-stabilizing transistor. 如請求項2所述之控制電路,其中該穩壓電晶體的該源極耦接於該掃掠訊號,該穩壓電晶體的該汲極接收該第一電壓,該穩壓電晶體的一閘極接收該補償控制訊號。 A control circuit as described in claim 2, wherein the source of the voltage-stabilizing transistor is coupled to the sweep signal, the drain of the voltage-stabilizing transistor receives the first voltage, and a gate of the voltage-stabilizing transistor receives the compensation control signal. 如請求項3所述之控制電路,其中該第一電壓表示一邏輯高電位或一閘極高電位。 A control circuit as described in claim 3, wherein the first voltage represents a logic high potential or a gate high potential. 如請求項1所述之控制電路,其中該幅度調變控制電路包括:一幅度控制電晶體,該幅度控制電晶體的一閘極耦接於該第二寬度控制電晶體,該幅度控制電晶體的一汲極間接耦接於一發光單元;其中當該控制電路操作於一發光階段時,該幅度控制電晶體提供一驅動電流至該發光單元。 A control circuit as described in claim 1, wherein the amplitude modulation control circuit comprises: an amplitude control transistor, a gate of the amplitude control transistor is coupled to the second width control transistor, and a drain of the amplitude control transistor is indirectly coupled to a light-emitting unit; wherein when the control circuit operates in a light-emitting phase, the amplitude control transistor provides a driving current to the light-emitting unit. 如請求項5所述之控制電路,其中當該控制電路操作於一補償階段時,該第一寬度控制電晶體、該第二寬度控制電晶體與該第三寬度控制電晶體皆為導通,該幅度控制電晶體的該閘極進行充電,該幅度控制電晶體的該閘極的電壓增加。 The control circuit as described in claim 5, wherein when the control circuit operates in a compensation phase, the first width control transistor, the second width control transistor and the third width control transistor are all turned on, the gate of the amplitude control transistor is charged, and the voltage of the gate of the amplitude control transistor increases. 如請求項6所述之控制電路,其中當該控制電路操作於該補償階段時,該第三寬度控制電晶體的一汲極的電壓增加,且該第三寬度控制電晶體的該閘極的電壓增加。 A control circuit as described in claim 6, wherein when the control circuit operates in the compensation stage, the voltage of a drain of the third width control transistor increases, and the voltage of the gate of the third width control transistor increases. 如請求項7所述之控制電路,其中該第一電容、該第二電容與該第三寬度控制電晶體的一寄生電容具有一分壓比例,該第三寬度控制電晶體的該閘極的電壓的變化量是正相關於該分壓比例。 A control circuit as described in claim 7, wherein the first capacitor, the second capacitor and a parasitic capacitor of the third width control transistor have a voltage division ratio, and the change in the voltage of the gate of the third width control transistor is positively correlated to the voltage division ratio. 如請求項5所述之控制電路,其中當該控制電路操作於該發光階段時,該發光單元具有一發光期間,該發光期間的時間長度是相關於該掃掠訊號的電壓。 A control circuit as described in claim 5, wherein when the control circuit operates in the light-emitting phase, the light-emitting unit has a light-emitting period, and the duration of the light-emitting period is related to the voltage of the sweeping signal. 如請求項9所述之控制電路,其中該顯示面板包括一第一區域與一第二區域,該第一區域相鄰於該第二區域,該控制電路用於控制該第一區域的一第一像素與該第二區域的一第二像素,其中當該控制電路操作於該發光階段時,該第一區域的該第一像素具有第一發光期間,該第二區域的該第二像素具有第二發光期間,該第一發光期間的時間長度大致相等於該第二發光期間的時間長度。 A control circuit as described in claim 9, wherein the display panel includes a first area and a second area, the first area is adjacent to the second area, and the control circuit is used to control a first pixel in the first area and a second pixel in the second area, wherein when the control circuit operates in the light-emitting phase, the first pixel in the first area has a first light-emitting period, and the second pixel in the second area has a second light-emitting period, and the duration of the first light-emitting period is substantially equal to the duration of the second light-emitting period.
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CN115588402A (en) * 2022-09-30 2023-01-10 深圳市华星光电半导体显示技术有限公司 Drive circuit and display panel
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TW202015020A (en) * 2018-10-04 2020-04-16 南韓商三星電子股份有限公司 Display panel and method for driving the display panel
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CN115312011A (en) * 2022-04-26 2022-11-08 友达光电股份有限公司 Pixel circuit and power supply method of shutdown power supply sequence thereof
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