TWI837967B - Wafer processing system and method of wafer localization - Google Patents
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Abstract
Description
本揭露是關於一種晶圓處理系統及定位晶圓的方法,特別是關於一種具有光感測器的一種晶圓處理系統及定位晶圓的方法。The present disclosure relates to a wafer processing system and a method for positioning a wafer, and more particularly to a wafer processing system and a method for positioning a wafer with a photo sensor.
隨著積體電路產品快速發展,作為積體電路原料的晶圓需求與日俱增。在晶圓的生產過程中,晶圓的定位基本上是必須的。不管是在傳輸晶圓時,還是執行晶圓的加工製程時,晶圓的偏移易使得機臺產生錯誤。對於需要對晶圓上特定的結構進行的操作而言,更要求能夠準確掌握如光學顯微鏡鏡頭或探針等操作工具和晶圓上對應的結構間的相對位置。With the rapid development of integrated circuit products, the demand for wafers, which are the raw materials of integrated circuits, is increasing day by day. In the production process of wafers, wafer positioning is basically necessary. Whether it is when transferring wafers or executing wafer processing, the deviation of wafers can easily cause errors in the machine. For operations that need to be performed on specific structures on the wafer, it is even more necessary to accurately grasp the relative position between operating tools such as optical microscope lenses or probes and the corresponding structures on the wafer.
本揭露提供一種晶圓處理系統,晶圓處理系統包含晶圓傳輸裝置、晶圓偵測裝置以及處理器。晶圓傳輸裝置移動透明晶圓或不透明晶圓並輸出多個移動距離。晶圓偵測裝置包含多個感測器,此些感測器中的每一者包含發射端、接收端以及輸出電路。接收端接收來自發射端的光線。輸出電路耦接接收端,並輸出電壓。當接收端直接接收光線時,輸出電壓具有大於閾值的第一電壓值。當不透明晶圓在發射端及接收端之間時,輸出電壓具有第二電壓值。當透明晶圓在發射端及接收端之間時,輸出電壓具有第三電壓值,其中第二電壓值及第三電壓值小於閾值。處理器根據閾值、移動距離以及感測器中的每一者的輸出電壓定位透明晶圓或不透明晶圓上的多個邊緣點。The present disclosure provides a wafer processing system, which includes a wafer transport device, a wafer detection device and a processor. The wafer transport device moves a transparent wafer or an opaque wafer and outputs multiple moving distances. The wafer detection device includes multiple sensors, each of which includes a transmitting end, a receiving end and an output circuit. The receiving end receives light from the transmitting end. The output circuit is coupled to the receiving end and outputs a voltage. When the receiving end directly receives the light, the output voltage has a first voltage value greater than a threshold value. When the opaque wafer is between the transmitting end and the receiving end, the output voltage has a second voltage value. When the transparent wafer is between the transmitting end and the receiving end, the output voltage has a third voltage value, wherein the second voltage value and the third voltage value are less than the threshold value. The processor locates multiple edge points on a transparent or opaque wafer based on the threshold, travel distance, and output voltage of each of the sensors.
本揭露提供一種定位晶圓的方法,包含:調整自多個感測器中的每一者傳輸至處理器的輸出電壓;透過處理器根據輸出電壓產生判斷結果,其中輸出電壓等於電壓閾值;當透明晶圓放置在感測器的發射端及接收端之間,透過感測器輸出具有第一電壓值的輸出電壓至處理器;當第一電壓值大於電壓閾值時,調整感測器的可變電阻以使得輸出電壓具有小於電壓閾值的第二電壓值; 透過晶圓傳輸裝置沿第一方向移動透明晶圓經過此些感測器,並輸出多個移動距離;以及透過處理器根據此些感測器中每一者的輸出電壓、電壓閾值及此些移動距離產生透明晶圓的多個邊緣位置。The present disclosure provides a method for positioning a wafer, comprising: adjusting an output voltage transmitted from each of a plurality of sensors to a processor; generating a judgment result according to the output voltage by the processor, wherein the output voltage is equal to a voltage threshold; when a transparent wafer is placed between a transmitting end and a receiving end of the sensor, outputting an output voltage having a first voltage value to the processor by the sensor; when the first voltage value is greater than the voltage threshold, adjusting a variable resistance of the sensor so that the output voltage has a second voltage value less than the voltage threshold; The transparent wafer is moved along a first direction through the sensors by a wafer transport device, and a plurality of moving distances are outputted; and a plurality of edge positions of the transparent wafer are generated by a processor according to the output voltage, voltage threshold and the moving distances of each of the sensors.
本揭露提供一種定位晶圓的方法,方法包含:量測感測器的輸出端的輸出電壓,當感測器的接收端直接接收來自感測器的發射端的光線時,輸出電壓具有第一電壓值,當第一晶圓在接收端及發射端之間時,輸出電壓具有第二電壓值,當第二晶圓在接收端及發射端之間時,輸出電壓具有第三電壓值;調整感測器以使第一電壓值大於電壓閾值以及第二電壓及第三電壓小於電壓閾值; 透過晶圓傳輸裝置移動第一晶圓或第二晶圓經過感測器,並輸出多個移動距離;以及透過處理器根據此些感測器中每一者的輸出電壓、電壓閾值及此些移動距離產生第一晶圓或第二晶圓的多個邊緣位置。The present disclosure provides a method for positioning a wafer, the method comprising: measuring an output voltage of an output end of a sensor, when a receiving end of the sensor directly receives light from a transmitting end of the sensor, the output voltage has a first voltage value, when a first wafer is between the receiving end and the transmitting end, the output voltage has a second voltage value, and when a second wafer is between the receiving end and the transmitting end, the output voltage has a third voltage value; adjusting the sensor so that the first voltage value is greater than a voltage threshold value and the second voltage and the third voltage are less than the voltage threshold value; The first wafer or the second wafer is moved through the sensors by a wafer transport device, and a plurality of moving distances are outputted; and a plurality of edge positions of the first wafer or the second wafer is generated by a processor according to the output voltage, the voltage threshold and the moving distances of each of the sensors.
以下揭示內容提供了用於實現提供之標的的不同特徵的許多不同的實施例或示例。以下描述元件及佈置的特定示例用以簡化本案的一實施例。當然,該些僅為示例,並不旨在進行限制。例如,在下面的描述中在第二特徵上方或之上形成第一特徵可包括其中第一及第二特徵直接接觸形成的實施例,並且亦可包括其中在第一與第二特徵之間形成附加特徵的實施例,以使得第一及第二特徵可以不直接接觸。此外,本揭示內容可以在各個示例中重複元件符號或字母。此重複係出於簡單及清楚的目的,其本身並不指定所討論之各種實施例或組態之間的關係。The following disclosure provides many different embodiments or examples for implementing different features of the provided subject matter. The following describes specific examples of components and arrangements to simplify one embodiment of the present invention. Of course, these are merely examples and are not intended to be limiting. For example, forming a first feature above or on a second feature in the following description may include embodiments in which the first and second features are formed in direct contact, and may also include embodiments in which additional features are formed between the first and second features so that the first and second features may not be in direct contact. In addition, the present disclosure may repeat component symbols or letters in various examples. This repetition is for the purpose of simplicity and clarity and does not itself specify the relationship between the various embodiments or configurations discussed.
在本說明書中使用的術語通常具有本領域及在使用每一術語的特定上下文中的普通意義。在本說明書中使用示例,包括本文討論的任何術語的示例,僅為說明性的,絕不限制本案的一實施例或任何示例性術語的範圍及意義。同樣,本案的一實施例不限於本說明書中給定的各種實施例。The terms used in this specification generally have their ordinary meaning in the art and in the specific context in which each term is used. The use of examples in this specification, including examples of any term discussed herein, is illustrative only and in no way limits the scope and meaning of an embodiment of the present invention or any exemplary term. Similarly, an embodiment of the present invention is not limited to the various embodiments given in this specification.
更進一步,為了便於描述,本文中可以使用諸如「在...下方」、「在...下」、「下方」、「在...上方」、「上方」之類的空間相對術語,來描述如圖中所示的一個元件或特徵與另一元件或特徵的關係。除了在附圖中示出的定向之外,空間相對術語意在涵蓋裝置在使用或操作中的不同定向。設備可以其他方式定向(旋轉90度或以其他定向),並且在此使用的空間相對描述語亦可被相應地解釋。如本文所使用,術語「及/或」包括一或多個相關聯的所列項目的任何及所有組合。Further, for ease of description, spatially relative terms such as "below," "under," "below," "above," "above," and the like may be used herein to describe the relationship of one element or feature to another element or feature as shown in the figures. Spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation shown in the accompanying figures. The device may be oriented in other ways (rotated 90 degrees or in other orientations), and the spatially relative descriptors used herein may be interpreted accordingly. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
如本文所用,「大約」、「約」、「近似」或「基本上」應通常指給定值或範圍的任何近似值,其中其取決於所涉及的各種領域而變化,並且其範疇應與本領域技術人員所理解的最廣泛解釋相一致,以涵蓋所有該些修改及類似的結構。在一些實施例中,它通常應指給定值或範圍的百分之二十以內,優選地為百分之十以內,更優選地為百分之五以內。本文給定的數值為近似的,意味著若未明確說明,則可以推斷出術語「大約」、「約」、「近似」或「基本上」,或者意味著其他近似值。As used herein, "about", "approximately", or "substantially" shall generally refer to any approximation of a given value or range, which varies depending on the various fields involved, and its scope shall be consistent with the broadest interpretation understood by those skilled in the art to cover all such modifications and similar structures. In some embodiments, it shall generally refer to within 20 percent of a given value or range, preferably within 10 percent, and more preferably within 5 percent. The numerical values given herein are approximate, meaning that if not explicitly stated, the term "about", "approximately", or "substantially" can be inferred, or other approximate values are meant.
第1圖根據一些實施例繪示晶圓處理系統100的一個示例的方塊圖。晶圓處理系統100包含晶圓處理裝置110以及晶圓存放裝置120。晶圓處理裝置110用以移動存放在晶圓存放裝置120中的晶圓並對晶圓執行傳送位置之校正。在不同的實施例中,晶圓存放裝置120可以是晶舟(wafer cassette)、晶圓盒(box)或晶圓載具(carrier)等用以存放晶圓的裝置。FIG. 1 is a block diagram of an example of a
在第1圖所繪示的示例中,晶圓處理裝置110包含處理器111、晶圓偵測裝置112、晶圓傳輸裝置117以及記憶體118。處理器111耦接晶圓偵測裝置112、晶圓傳輸裝置117以及記憶體118。晶圓傳輸裝置117用以將晶圓自晶圓存放裝置120移動經過晶圓偵測裝置112。處理器111用以藉由晶圓偵測裝置112判斷晶圓是否偏離預定位置(例如,用以在晶圓處理裝置110的內部垂直移動晶圓的儲存升降台(storage elevator)的中心)並藉由晶圓傳輸裝置117校正至預定位置。在一些實施例中,晶圓傳輸裝置117是具有用以吸取晶圓的托盤/叉(blade/fork)的機器手臂。In the example shown in FIG. 1 , the
說明而言,晶圓偵測裝置112包含多個感測器113,這些感測器113中的每一者包含發射端114、接收端115以及輸出電路116。發射端114為光源,例如發光二極體。接收端115具有可感測光的元件,例如光敏電阻。接收端115用以根據所接收光的強弱產生感測電壓。輸出電路116耦接接收端115。在一些實施例中,輸出電路116作為分壓電路並用以根據接收端115的感測電壓產生輸出電壓。在一些實施例中,輸出電路116耦接處理器111並用以傳輸輸出電壓至處理器111,處理器111更用以根據所接收的輸出電壓判斷是否有晶圓在發射端114及接收端115之間。For illustration, the
第1圖所繪示的實施例不用以限制本案。在一些實施例中,處理器111不耦接接收端115且晶圓偵測裝置112更包含不同於處理器111的處理器。輸出電路116耦接並傳輸輸出電壓至晶圓偵測裝置112的處理器。晶圓偵測裝置112的處理器根據所接收的輸出電壓判斷是否有晶圓在發射端114及接收端115之間並傳輸判斷結果至處理器111。The embodiment shown in FIG. 1 is not intended to limit the present invention. In some embodiments, the
現參考第2圖,第2圖是根據一些實施例繪示無晶圓在發射端114及接收端115之間的感測器113的一個示意圖。對應於第1圖,為了易於理解,以相同元件符號表示第2圖中之相同元件。為了簡要起見,本文中省略已在以上段落中詳細論述之類似元件的特定操作,除非需要介紹與第2圖中所示之元件的協作關係。Referring now to FIG. 2, FIG. 2 is a schematic diagram of a
如第2圖所示,發射端114設置在接收端115的上方,且其間具有足以讓晶圓通過的空間。發射端114用以作為產生直射接收端115的光線201的光源。接收端115用以根據所接收光線201的強度產生感測電壓Vout1。輸出電路116耦接接收端115並用以根據感測電壓Vout1在輸出電路116的輸出端212產生輸出電壓Vout2。在一些實施例中,輸出電路116包含可變電阻211,並且可以藉由調整可變電阻211的電阻值,改變輸出電壓Vout2和感測電壓Vout1間的比率,例如,藉由提高可變電阻211的電阻值,根據感測電壓Vout1產生之輸出電壓Vout2的電壓值會相應上升。As shown in FIG. 2 , the transmitting
現參考第3圖,第3圖是根據一些實施例繪示具有不透明晶圓320在發射端114及接收端115之間的感測器113的一個示意圖。對應於第2圖,為了易於理解,以相同元件符號表示第3圖中之相同元件。Referring now to FIG. 3 , FIG. 3 is a schematic diagram of a
說明而言,當不透明晶圓320(例如,矽晶圓)在發射端114及接收端115之間的感測點P(發射端114產生的光線201投射在晶圓上的點)時,不透明晶圓320遮蔽來自發射端114的光線201。在一些實施例中,輸出電路116相應地產生具有接近0伏特的電壓值Vl的輸出電壓Vout2。在一些實施例中,當接收端115直接接收光線201時輸出電壓Vout2具有電壓值Vh,而電壓值Vl小於電壓值Vh。在一些實施例中,電壓值Vl大約等於0.03伏特,電壓值Vh大約等於1.5伏特 (此處的電壓值僅為舉例,並不用以限制本案)。To illustrate, when the opaque wafer 320 (e.g., a silicon wafer) is at the sensing point P (the point where the light 201 generated by the transmitting
現參考第4圖,第4圖是根據一些實施例繪示透明晶圓420在發射端114及接收端115之間的感測器113的一個示意圖。對應於第3圖,為了易於理解,以相同元件符號表示第4圖中之相同元件。Referring now to FIG. 4 , FIG. 4 is a schematic diagram showing a
說明而言,當透明晶圓420(例如,碳化矽(SiC)晶圓)在發射端114及接收端115之間時,發射端114產生光線201穿透透明晶圓420,而接收端115所接收的光強度小於直接接收光線201時的光強度。在一些實施例中,隨著接收端115接收較低的光強度,接收端115產生較低的感測電壓Vout1且輸出電路116相應地產生較低的輸出電壓Vout2。根據一些實施例,接收端115感測的光強度根據光線201在透明晶圓420穿透的位置不同而變化,因此輸出電路116相應地產生屬於一電壓值範圍(具有最小電壓值Va及最大電壓值Vb)的輸出電壓Vout2。在一些實施例中,最小電壓值Va小於電壓值Vh。For illustration, when the transparent wafer 420 (e.g., a silicon carbide (SiC) wafer) is between the transmitting
現參考第5圖,第5圖是根據一些實施例繪示移動晶圓經過晶圓偵測裝置112的一個示意圖。對應於第4圖及第3圖,為了易於理解,以相同元件符號表示第5圖中之相同元件。Referring now to FIG. 5 , FIG. 5 is a schematic diagram illustrating a wafer being moved through the
說明而言,如第5圖所繪示的實施例中,晶圓傳輸裝置117(未繪示於第5圖中)沿一移動方向501移動晶圓(不透明晶圓320或透明晶圓420)經過晶圓偵測裝置112中的一個感測器113,晶圓上的兩個邊緣點(例如第5圖所示的邊緣點a、a’)會通過感測點P。舉例而言,如第5圖所示,晶圓沿移動方向501進入發射端114及接收端115之間時,光線201首先投射在邊緣點a上。接著,光線201隨晶圓移動依序投射在a-a’截線中的點上。晶圓沿移動方向501離開發射端114及接收端115之間時,光線201最後投射在邊緣點a’上,之後光線201便直接投射於接收端115。For illustration, in the embodiment shown in FIG. 5 , the wafer transport device 117 (not shown in FIG. 5 ) moves the wafer (
現參考第6圖,第6圖根據一些實施例繪示不透明晶圓320的移動距離和感測器113的輸出電壓Vout2的電壓值間示例性的關係,對應於第5圖,為了易於理解,以相同元件符號表示第6圖中之相同元件。Now refer to FIG. 6 , which illustrates an exemplary relationship between the moving distance of the
說明而言,第6圖的橫軸對應不透明晶圓320隨著晶圓傳輸裝置117自一起始點沿移動方向501移動的距離。舉例而言,在一些實施例中,晶圓傳輸裝置117將不透明晶圓320自晶圓存放裝置120移動至固定的起始點,接著沿移動方向501移動不透明晶圓320經過晶圓偵測裝置112,同時,晶圓傳輸裝置117傳輸自起始點的移動距離至處理器111。在一些晶圓傳輸裝置117為機器手臂的實施例中,晶圓傳輸裝置117每移動一固定距離(換言之,一步)便傳輸相對於一原點(例如上文所述的起始點)之機器手臂的托盤/叉所在的二維空間座標至處理器111,接著處理器111根據此座標與起始點產生移動距離。For illustration, the horizontal axis of FIG. 6 corresponds to the distance that the
在第6圖所繪的示例中,移動距離Da對應不透明晶圓320的邊緣點a在晶圓偵測裝置112的發射端114及接收端115之間時,不透明晶圓320移動的距離。相同地,移動距離Da’對應不透明晶圓320的邊緣點a’在晶圓偵測裝置112的發射端114及接收端115之間時,不透明晶圓320移動的距離。In the example shown in FIG. 6 , the moving distance Da corresponds to the distance that the
此外,第6圖所繪示的縱軸對應感測器113中輸出電路116的輸出電壓Vout2的電壓值。根據第6圖所繪示的實施例,不透明晶圓320的移動距離小於移動距離Da或大於移動距離Da’時,輸出電壓Vout2具有電壓值Vh。當不透明晶圓320的移動距離大於移動距離Da且小於移動距離Da’時,不透明晶圓320經過感測器113並遮蔽自發射端114至接收端115的光線201,因此輸出電壓Vout2具有低於電壓值Vh的電壓值Vl。In addition, the vertical axis shown in FIG. 6 corresponds to the voltage value of the output voltage Vout2 of the
接續上述段落,在一些實施例中,處理器111根據大於電壓值Vl且小於電壓值Vh的電壓閾值Vth判斷晶圓是否經過感測器113。舉例而言,當一感測器113的輸出電壓Vout2大於電壓閾值Vth時,處理器111判斷沒有晶圓在此感測器113的發射端114及接收端115之間。反之,當一感測器113的輸出電壓Vout2小於電壓閾值Vth時,處理器111判斷有晶圓在此感測器113的發射端114及接收端115之間。Continuing from the above paragraph, in some embodiments, the
現參考第7圖,第7圖根據一些實施例繪示透明晶圓420的移動距離和感測器113的輸出電壓Vout2的電壓值間示例性的關係,對應於第5圖,為了易於理解,以相同元件符號表示第7圖中之相同元件。Now refer to FIG. 7 , which illustrates an exemplary relationship between the moving distance of the
說明而言,第7圖的橫軸對應透明晶圓420隨著晶圓傳輸裝置117自上述起始點沿移動方向501移動的距離。第7圖所繪示的縱軸對應感測器113中輸出電路116的輸出電壓Vout2的電壓值。在第7圖中,移動距離Da對應透明晶圓420的邊緣點a在晶圓偵測裝置112的發射端114及接收端115之間時,透明晶圓420移動的距離。相同地,移動距離Da’對應透明晶圓420的邊緣點a’在晶圓偵測裝置112的發射端114及接收端115之間時,透明晶圓420移動的距離。For illustration, the horizontal axis of FIG. 7 corresponds to the distance that the
如第7圖所示,當透明晶圓420的移動距離小於移動距離Da或大於移動距離Da’時,輸出電壓Vout2具有電壓值Vh。當透明晶圓420的移動距離大於移動距離Da且小於移動距離Da’時,輸出電壓Vout2隨著透明晶圓420經過感測器113的位置不同(換言之,光線201在透明晶圓420上的穿透位置不同)而改變,輸出電壓Vout2的電壓值變動於電壓值Va到電壓值Vb的電壓值範圍內。As shown in FIG. 7 , when the moving distance of the
在第7圖所繪示的示例中,於上一段落所述的電壓值範圍的最小值Va大於電壓閾值Vth。因此,當處理器111根據電壓閾值Vth判斷感測器113的發射端114及接收端115之間是否有晶圓時會產生錯誤。舉例而言,當透明晶圓420移動經過感測器113時,輸出電壓Vout2在電壓值Va到電壓值Vb之間。處理器111根據輸出電壓Vout2大於電壓閾值Vth判斷沒有晶圓在感測器113的發射端114及接收端115之間,然而實際上在發射端114及接收端115之間存在透明晶圓420。在一些實施例中,藉由調整輸出電路116使得當晶圓經過感測器113時,輸出電壓Vout2的電壓值皆小於電壓閾值Vth(將於下文參考第8圖作詳細的描述)。In the example shown in FIG. 7 , the minimum value Va of the voltage value range described in the previous paragraph is greater than the voltage threshold value Vth. Therefore, when the
現參考第8圖,第8圖根據一些實施例繪示不透明晶圓320/透明晶圓420的移動距離和經調整的感測器113的輸出電壓Vout2的電壓值間示例性的關係。對應於第6圖及第7圖,為了易於理解,以相同元件符號表示第8圖中之相同元件。Referring now to FIG. 8 , FIG. 8 illustrates an exemplary relationship between the moving distance of the
在一些實施例中,調整輸出電路116的可變電阻211的電阻值,使得當有晶圓在發射端114及接收端115之間時,輸出電壓Vout2的電壓值小於電壓閾值Vth;當沒有晶圓在發射端114及接收端115之間時,輸出電壓Vout2的電壓值大於電壓閾值Vth。因此,處理器111可以根據電壓閾值Vth正確判斷是否有晶圓經過感測器113。In some embodiments, the resistance value of the
舉例而言,在輸出電路116的可變電阻211未經調整的實施例中,在沒有晶圓在發射端114及接收端115之間時,輸出電壓Vout2具有電壓值Vh;而在不透明晶圓320移動至發射端114及接收端115之間時(移動的距離大於移動距離Da小於移動距離Da’),輸出電壓Vout2具有電壓值Vl;相對地,在透明晶圓420移動至發射端114及接收端115之間時,輸出電壓Vout2具有電壓值Va到電壓值Vb的範圍內的電壓值。由於電壓值Va大於電壓閾值Vth,處理器111無法根據電壓閾值Vth正確判斷是否有晶圓經過感測器113。For example, in an embodiment in which the
相對地,在輸出電路116的可變電阻211經過調整的實施例中,在沒有晶圓在發射端114及接收端115之間時,輸出電壓Vout2具有電壓值Vh’;在不透明晶圓320移動至發射端114及接收端115之間時(移動的距離大於移動距離Da小於移動距離Da’),輸出電壓Vout2具有電壓值Vl’;在透明晶圓420移動至發射端114及接收端115之間時,輸出電壓Vout2具有電壓值Va’到電壓值Vb’的範圍內的電壓值,其中最大電壓值Vb’ 小於電壓閾值Vth且電壓值Vh’ 大於電壓閾值Vth,因此處理器111可以根據電壓閾值Vth正確判斷是否有晶圓經過感測器113。In contrast, in an embodiment in which the
現參考第9A圖,第9A圖根據一些實施例繪示不透明晶圓320/透明晶圓420和晶圓偵測裝置112間示例性的關係。對應於第5圖,為了易於理解,以相同元件符號表示第9A圖中之相同元件。Referring now to FIG. 9A , FIG. 9A illustrates an exemplary relationship between the
說明而言,在第9A圖所示的實施例中,晶圓偵測裝置112具有根據感測器113配置的感測器113a、感測器113b以及感測器113c。感測器113a-113b彼此配置相同且沿方向y彼此對齊地設置。感測器113b設置在晶圓偵測裝置112的中心點C上,且感測器113a及感測器113c設置在感測器113b在方向y上的兩側。感測器113a及感測器113c皆與感測器113b以間距S1相隔(與中心點C相距間距S1)。For illustration, in the embodiment shown in FIG. 9A , the
接續上述實施例,如第9A圖所示,當晶圓(在此晶圓包含不透明晶圓320及透明晶圓420)的中心點920對齊起始點時,在垂直方向y的方向x (等於移動方向501)上,晶圓的邊緣點911和感測器113b的感測點P1相距距離D1,晶圓的邊緣點912和感測器113b的感測點P1相距距離D2。換言之,當晶圓移動距離D1時,晶圓與感測器113b重合,邊緣點911在感測器113b的發射端及接收端之間;當晶圓移動距離D2時,邊緣點912在感測器113b的發射端及接收端之間,(亦即晶圓將離開感測器113b)。Continuing with the above embodiment, as shown in FIG. 9A , when the
相同地,當晶圓的中心點920對齊起始點SP時,在垂直方向y的方向x上:晶圓的邊緣點913和感測器113a的感測點P2相距距離D3;晶圓的邊緣點914和感測點P2相距距離D4;晶圓的邊緣點915和感測器113c的感測點P3相距距離D5;以及晶圓的邊緣點916和感測點P2相距距離D6。 換言之,當晶圓移動距離D3時,晶圓與感測器113a重合,邊緣點913在感測器113a的發射端及接收端之間;當晶圓移動距離D4時,邊緣點914在感測器113a的發射端及接收端之間。當晶圓移動距離D5時,晶圓與感測器113c重合,邊緣點915在感測器113c的發射端及接收端之間;當晶圓移動距離D6時,邊緣點916在感測器113c的發射端及接收端之間。Similarly, when the
在一些實施例中,記憶體118用以儲存晶圓傳輸裝置117輸出的多個移動距離(或移動步數)及在這些移動距離時根據感測器113a-113c的輸出電壓值產生之判斷是否有晶圓在發射端及接收端之間的判斷結果。說明而言,當輸出電壓Vout2的電壓值大於電壓閾值Vth時,處理器111產生沒有晶圓在發射端及接收端之間的判斷結果;相對地,當輸出電壓Vout2的電壓值小於電壓閾值Vth時,處理器111產生有晶圓在發射端及接收端之間的判斷結果。處理器111用以根據這些判斷結果定位(找出相對一固定點如中心點C的位置)多個邊緣點(如邊緣點911-916)。In some embodiments, the
舉例而言,每當晶圓傳輸裝置117移動一步,處理器111便根據感測器113b的輸出電壓產生判斷是否有晶圓在發射端及接收端之間的判斷結果,並將移動距離及判斷結果儲存於記憶體118。在這些判斷結果中,當多個連續的移動步數的判斷結果皆為有晶圓在發射端及接收端之間時,處理器111以最小移動步數的移動距離作為距離D1以定位邊緣點911,並以最大移動步數的移動距離作為距離D2以定位邊緣點912。For example, every time the wafer transport device 117 moves one step, the
接續上述例子,請參照第9B圖,第9B圖根據一些實施例繪示對應於第9A圖的不透明晶圓320/透明晶圓420和晶圓偵測裝置112間示例性的關係。對應於第9A圖,為了易於理解,以相同元件符號表示第9B圖中之相同元件。Continuing with the above example, please refer to FIG. 9B, which shows an exemplary relationship between the
具體而言,中心點C的xy座標為(0,0)。處理器111根據距離D1產生邊緣點911的座標為(-D1,0)。處理器111根據距離D2產生邊緣點912的座標為(-D2,0)。如上所述在一些實施例中,處理器111用以根據此最小移動步數的移動距離及此最大移動步數的移動距離產生晶圓的中心920在移動方向501上的位置(例如晶圓的中心920的xy座標為((D1-D2)/2,0)。Specifically, the xy coordinates of the center point C are (0,0). The
現參考第10圖,第10圖根據一些實施例繪示偏移的不透明晶圓320/透明晶圓420和晶圓偵測裝置112間示例性的關係。對應於第9A圖,為了易於理解,以相同元件符號表示第10圖中之相同元件。Referring now to FIG. 10 , FIG. 10 illustrates an exemplary relationship between the offset
說明而言,在第10圖所繪示的實施例中晶圓沿方向y偏移起始點SP偏移距離D7。在方向x上: 晶圓的邊緣點911’和感測器113b的感測點P1相距距離D1’;晶圓的邊緣點912’和感測點P1相距距離D2’;晶圓的邊緣點913’和感測器113a的感測點P2相距距離D3’;晶圓的邊緣點914’和感測點P2相距距離D4’;晶圓的邊緣點915’和感測器113c的感測點P3相距距離D5’;以及晶圓的邊緣點916’和感測點P2相距距離D6’。For illustration, in the embodiment shown in FIG. 10 , the wafer is offset from the starting point SP by a distance D7 along the direction y. In the direction x: the
在一些實施例中,處理器111用以根據距離D3’、 距離D4’、晶圓的半徑R及間距S1判斷偏移距離D7。舉例而言,距離D4’和距離D3’之差的一半為長度L1。利用長度L1及半徑R判斷晶圓中心點920和感測點P2在方向y上相距的長度L2,並以間距S1和長度L2的差判斷偏移距離D7。在一些實施例中,處理器111根據距離D4’和距離D3’的差判斷邊緣點913’和邊緣點914’的間距,並根據距離D6’和距離D5’的差判斷邊緣點915’和邊緣點916’的間距,接著比較邊緣點913’和邊緣點914’的間距以及邊緣點915’和邊緣點916’的間距,以判斷晶圓的偏移方向(例如當邊緣點913’和邊緣點914’的間距較大,處理器111判斷晶圓沿著方向y正向地偏移。In some embodiments, the
現參考第11圖,第11圖根據一些實施例繪示定位晶圓的方法1100的一個流程圖。定位晶圓的方法1100中的至少一些操作(或步驟)可以用來定位透明晶圓例如第4圖中的透明晶圓420。Referring now to FIG. 11 , FIG. 11 is a flowchart of a
方法1100僅是一個示例,並不意圖限制本案。因此應當理解在第11圖的方法1100之前、之間和之後可提供更多操作,並且方法1100中的一些操作可以被取代或是移除。可以預期方法1100的操作可以替代地以第11圖所示以外的順序進行。製造方法1100包含操作1101、1102、1103、1104、1105及1106,且將於下文討論。The
在操作1101中,調整自如第2圖所示的多個感測器113中的每一者傳輸至處理器111的輸出電壓Vout2。In
在一些實施例中,此些感測器是沿垂直於方向x的方向y設置。In some embodiments, the sensors are arranged along a direction y that is perpendicular to the direction x.
在操作1102中,透過處理器111根據輸出電壓Vout2產生判斷結果,輸出電壓Vout2等於電壓閾值Vth。In
在操作1103中,當透明晶圓420放置在感測器113的發射端114及接收端115之間,透過感測器113輸出具有第一電壓值的輸出電壓Vout2至處理器111。In
在操作1104中,當第一電壓值大於電壓閾值Vth時,調整感測器113的可變電阻211以使得輸出電壓Vout2具有小於電壓閾值Vth的第二電壓值。In
在操作1105中,透過晶圓傳輸裝置117沿移動方向501移動透明晶圓420經過此些感測器113,並輸出多個移動距離,例如第10圖中的距離D1’-D6’。In
在操作1106中,透過處理器111根據此些感測器113中每一者的輸出電壓Vout2、電壓閾值Vth及此些移動距離產生透明晶圓420的多個邊緣位置。In
在一些實施例中,方法1100更包含根據透明晶圓420經過此些感測器113中的一者的第一邊緣位置及第二邊緣位置,產生該透明晶圓的中心在第一方向上的位置。In some embodiments, the
現參考第12圖,第12圖根據一些實施例繪示定位晶圓的方法1200的一個流程圖。定位晶圓的方法1200中的至少一些操作(或步驟)可以用來定位晶圓例如第3圖中的不透明晶圓320及第4圖中的透明晶圓420。Referring now to FIG. 12 , FIG. 12 is a flowchart of a
方法1200僅是一個示例,並不意圖限制本案。因此應當理解在第12圖的方法1200之前、之間和之後可提供更多操作,並且方法1200中的一些操作可以被取代或是移除。可以預期方法1200的操作可以替代地以第12圖所示以外的順序進行。製造方法1200包含操作1201、1202、1203及1204,且將於下文討論。The
在操作1201中,量測如第2圖所示的感測器113的輸出端的輸出電壓Vout2,當感測器113的接收端115直接接收來自感測器113的發射端114的光線201時,輸出電壓具有第一電壓值(例如第6圖的Vh),當第一晶圓(例如不透明晶圓320)在接收端115及發射端114之間時,輸出電壓具有第二電壓值(例如第6圖的Vl),當第二晶圓(例如透明晶圓420)在接收端115及發射端114之間時,輸出電壓具有第三電壓值(例如第7圖的Va)。In
在操作1202中,調整感測器113以使第一電壓值大於電壓閾值Vth,以及第二電壓及第三電壓小於電壓閾值Vth。In
在一些實施例中,第三電壓屬於一電壓值範圍(例如第8圖中的電壓值Va’到電壓值Vb’),電壓值範圍的一最大值(如Vb’)小於電壓閾值Vth。In some embodiments, the third voltage belongs to a voltage value range (e.g., voltage value Va' to voltage value Vb' in FIG. 8), and a maximum value of the voltage value range (e.g., Vb') is less than the voltage threshold Vth.
在操作1203中,透過晶圓傳輸裝置117移動第一晶圓或第二晶圓經過感測器113,並輸出多個移動距離(例如第10圖中的移動距離D1’-D6’)。In
在操作1204中,透過處理器111根據輸出電壓Vout2、電壓閾值Vth及此些移動距離產生第一晶圓或第二晶圓的多個邊緣位置(例如邊緣點911’-916’相對於起始點SP的位置)。In
在一些實施例中,方法1200更透過處理器111根據此些邊緣位置產生第一晶圓或第二晶圓的偏移方向及偏移距離(如第10圖中的方向y及偏移距離D7)。In some embodiments, the
在一些實施例中,透過晶圓傳送裝置117反向於此偏移方向移動第一晶圓或第二晶圓此偏移距離。In some embodiments, the first wafer or the second wafer is moved by the wafer transfer device 117 in the opposite direction to the offset direction by the offset distance.
綜合以上所述,本揭露提供一種具有光感測器的晶圓處理系統及定位透明晶圓及不透明晶圓的方法。晶圓偵測裝置的感測器中可調整的部件使得晶圓處理系統可以針對不同種類(不同透光度)的晶圓進行調整。即使在操作的晶圓種類未知的情況下,經調整後的晶圓處理系統仍能藉由感測器偵測是否有晶圓經過晶圓偵測裝置,並判斷晶圓是否有偏移並校正至預定的位置。In summary, the present disclosure provides a wafer processing system with a light sensor and a method for positioning a transparent wafer and an opaque wafer. The adjustable components in the sensor of the wafer detection device allow the wafer processing system to be adjusted for different types of wafers (with different light transmittances). Even when the type of wafer being operated is unknown, the adjusted wafer processing system can still detect whether a wafer passes through the wafer detection device through the sensor, and determine whether the wafer is offset and correct it to a predetermined position.
前文概述了數個實施例的特徵,使得本領域通常知識者可更好地理解本案的一實施例的態樣。本領域通常知識者應瞭解,可易於使用本案的一實施例作為設計或修改其他製程及結構的基礎以便實施本案所介紹的實施例的相同目的及/或實現相同優勢。本領域通常知識者亦應認識到,此類等效結構並未脫離本案的一實施例的精神及範疇,並且可在不脫離本案的一實施例的精神及範疇的情況下在本案的一實施例中執行各種變化、取代及修改。The foregoing summarizes the features of several embodiments so that those skilled in the art can better understand the aspects of an embodiment of the present invention. Those skilled in the art should understand that an embodiment of the present invention can be easily used as a basis for designing or modifying other processes and structures in order to implement the same purpose and/or achieve the same advantages of the embodiment introduced in the present invention. Those skilled in the art should also recognize that such equivalent structures do not deviate from the spirit and scope of an embodiment of the present invention, and that various changes, substitutions and modifications can be performed in an embodiment of the present invention without departing from the spirit and scope of an embodiment of the present invention.
100:晶圓處理系統100:Wafer processing system
110:晶圓處理裝置110: Wafer processing device
111:處理器111:Processor
112:晶圓偵測裝置112: Wafer detection device
113:感測器113:Sensor
114:發射端114: Transmitter
115:接收端115: Receiving end
116:輸出電路116: Output circuit
117:晶圓傳輸裝置117: Wafer transfer device
118:記憶體118: Memory
120:晶圓存放裝置120: Wafer storage device
201:光線201: Light
211:可變電阻211: Variable resistor
212:輸出端212: Output terminal
P:感測點P: Sensing point
Vout1:感測電壓Vout1: Sense voltage
Vout2:輸出電壓Vout2: output voltage
320:不透明晶圓320: Opaque wafer
420:透明晶圓420: Transparent Wafer
501:移動方向501:Moving direction
a:邊緣點a:Edge point
a’:邊緣點a’: edge point
Vh, Vl:電壓值Vh, Vl: voltage value
Vth:電壓閾值Vth: voltage threshold
Da, Da’:移動距離Da, Da’: moving distance
Va, Vb:電壓值Va, Vb: voltage value
Vh’, Vl’, Va’, Vb’:電壓值Vh’, Vl’, Va’, Vb’: voltage value
113a, 113b, 113c:感測器113a, 113b, 113c: Sensor
911-916:邊緣點911-916: Edge Point
920:中心點920: Center point
C:中心點C: Center point
D1-D6:距離D1-D6: Distance
P1, P2, P3:感測點P1, P2, P3: Sensing points
S1:間距S1: Spacing
SP:起始點SP: Starting point
x:方向x: direction
y:方向y: direction
911’-916’:邊緣點911’-916’: Edge Point
C:中心點C: Center point
D1’-D6’:距離D1’-D6’: Distance
D7:偏移距離D7: Offset distance
L1, L2:長度L1, L2: Length
R:半徑R: Radius
1100:定位晶圓的方法1100: Method for positioning wafer
1101-1106:操作1101-1106: Operation
1200:定位晶圓的方法1200: Method for positioning wafer
1201-1204:操作1201-1204: Operation
當結合隨附圖式閱讀時,將自下文的詳細描述最佳地理解本案的一實施例的態樣。應注意,根據工業中的標準實務,並未按比例繪製各特徵。事實上,為了論述清楚,可任意增加或減小各特徵的尺寸。
第1圖根據一些實施例繪示晶圓處理系統的一個示例的方塊圖;
第2圖是根據一些實施例繪示無晶圓在發射端及接收端之間的感測器的一個示意圖;
第3圖是根據一些實施例繪示具有不透明晶圓在發射端及接收端之間的感測器的一個示意圖;
第4圖是根據一些實施例繪示透明晶圓在發射端及接收端之間的感測器的一個示意圖;
第5圖是根據一些實施例繪示移動晶圓經過晶圓偵測裝置的一個示意圖;
第6圖根據一些實施例繪示不透明晶圓的移動距離和感測器的輸出電壓的電壓值間示例性的關係;
第7圖根據一些實施例繪示透明晶圓的移動距離和感測器的輸出電壓的電壓值間示例性的關係;
第8圖根據一些實施例繪示不透明晶圓/透明晶圓的移動距離和經調整的感測器的輸出電壓的電壓值間示例性的關係;
第9A圖根據一些實施例繪示不透明晶圓/透明晶圓和晶圓偵測裝置間示例性的關係;
第9B圖根據一些實施例繪示對應於第9A圖的不透明晶圓/透明晶圓和晶圓偵測裝置間示例性的關係;
第10圖根據一些實施例繪示偏移的不透明晶圓/透明晶圓和晶圓偵測裝置間示例性的關係。
第11圖根據一些實施例繪示定位晶圓的方法1100的一個流程圖;以及
第12圖根據一些實施例繪示定位晶圓的方法1200的一個流程圖。
The aspects of one embodiment of the present invention will be best understood from the detailed description below when read in conjunction with the accompanying drawings. It should be noted that, in accordance with standard practice in the industry, the various features are not drawn to scale. In fact, the dimensions of the various features may be arbitrarily increased or decreased for clarity of discussion.
FIG. 1 is a block diagram of an example of a wafer processing system according to some embodiments;
FIG. 2 is a schematic diagram of a sensor without a wafer between a transmitting end and a receiving end according to some embodiments;
FIG. 3 is a schematic diagram of a sensor with an opaque wafer between a transmitting end and a receiving end according to some embodiments;
FIG. 4 is a schematic diagram of a sensor with a transparent wafer between a transmitting end and a receiving end according to some embodiments;
FIG. 5 is a schematic diagram of a moving wafer passing through a wafer detection device according to some embodiments;
FIG. 6 is an exemplary relationship between a moving distance of an opaque wafer and a voltage value of an output voltage of a sensor according to some embodiments;
FIG. 7 illustrates an exemplary relationship between the moving distance of a transparent wafer and the voltage value of the output voltage of a sensor according to some embodiments;
FIG. 8 illustrates an exemplary relationship between the moving distance of an opaque wafer/transparent wafer and the voltage value of the adjusted output voltage of a sensor according to some embodiments;
FIG. 9A illustrates an exemplary relationship between an opaque wafer/transparent wafer and a wafer detection device according to some embodiments;
FIG. 9B illustrates an exemplary relationship between an opaque wafer/transparent wafer corresponding to FIG. 9A and a wafer detection device according to some embodiments;
FIG. 10 illustrates an exemplary relationship between a shifted opaque wafer/transparent wafer and a wafer detection device according to some embodiments.
FIG. 11 is a flowchart of a
國內寄存資訊(請依寄存機構、日期、號碼順序註記) 無 國外寄存資訊(請依寄存國家、機構、日期、號碼順序註記) 無 Domestic storage information (please note in the order of storage institution, date, and number) None Foreign storage information (please note in the order of storage country, institution, date, and number) None
100:晶圓處理系統 100: Wafer processing system
110:晶圓處理裝置 110: Wafer processing equipment
111:處理器 111: Processor
112:晶圓偵測裝置 112: Wafer detection device
113:感測器 113:Sensor
114:發射端 114: Transmitter
115:接收端 115: receiving end
116:輸出電路 116: Output circuit
117:晶圓傳輸裝置 117: Wafer transfer device
118:記憶體 118: Memory
120:晶圓存放裝置 120: Wafer storage device
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TW201145437A (en) * | 2009-11-19 | 2011-12-16 | Ulvac Inc | Method for specifying center position of substrate |
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US20150330914A1 (en) * | 2014-05-17 | 2015-11-19 | Kla-Tencor Corporation | Wafer Edge Detection and Inspection |
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US20010002447A1 (en) * | 1999-11-29 | 2001-05-31 | Dainippon Screen Mfg. Co., Ltd. | Substrate transport apparatus and transport teaching system |
TW201145437A (en) * | 2009-11-19 | 2011-12-16 | Ulvac Inc | Method for specifying center position of substrate |
TW201332043A (en) * | 2011-12-02 | 2013-08-01 | Kobe Steel Ltd | Rotational misalignment measuring device of bonded substrate, rotational misalignment measuring method of bonded substrate, and method of manufacturing bonded substrate |
US20150330914A1 (en) * | 2014-05-17 | 2015-11-19 | Kla-Tencor Corporation | Wafer Edge Detection and Inspection |
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