TWI837663B - Power supply device for suppressing magnetic saturation - Google Patents
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Abstract
Description
本發明係關於一種電源供應器,特別係關於一種可抑制磁飽和之電源供應器。The present invention relates to a power supply, and more particularly to a power supply capable of suppressing magnetic saturation.
在傳統電源供應器中,激磁電感器係內建於其變壓器當中。然而,每種磁性元件都有其正常使用之磁滯曲線範圍。當變壓器之溫度過高時,激磁電感器可能會進入磁飽和之狀態,此將導致其磁化特性消失並引發安全性之問題。有鑑於此,勢必要提出一種全新之解決方案,以克服先前技術所面臨之困境。In traditional power supplies, the excitation inductor is built into the transformer. However, each magnetic component has its normal use range of hysteresis curve. When the temperature of the transformer is too high, the excitation inductor may enter a state of magnetic saturation, which will cause its magnetization characteristics to disappear and cause safety issues. In view of this, it is necessary to propose a new solution to overcome the difficulties faced by previous technologies.
在較佳實施例中,本發明提出一種抑制磁飽和之電源供應器,包括:一橋式整流器,根據一第一輸入電位和一第二輸入電位來產生一整流電位;一第一變壓器,包括一第一主線圈和一第一副線圈,其中該第一變壓器內建一第一激磁電感器,而該第一主線圈係用於接收該整流電位;一第一功率切換器,根據一脈波寬度調變電位來選擇性地將該第一主線圈耦接至一接地電位;一第二變壓器,包括一第二主線圈和一第二副線圈,其中該第二變壓器內建一第二激磁電感器,而該第二主線圈係用於接收該整流電位;一第二功率切換器,根據該脈波寬度調變電位來選擇性地將該第二主線圈耦接至該接地電位;一輸出級電路,耦接至該第一副線圈和該第二副線圈,並產生一輸出電位;以及一偵測及控制電路,產生該脈波寬度調變電位,並偵測關於該第一變壓器之一溫度參數,其中該偵測及控制電路更根據該溫度參數來選擇性地致能或禁能該第二變壓器和該第二功率切換器。In a preferred embodiment, the present invention provides a power supply for suppressing magnetic saturation, comprising: a bridge rectifier, generating a rectified potential according to a first input potential and a second input potential; a first transformer, comprising a first main coil and a first secondary coil, wherein the first transformer has a built-in first excitation inductor, and the first main coil is used to receive the rectified potential; a first power switch, selectively coupling the first main coil to a ground potential according to a pulse width modulation potential; a second transformer, comprising a second main coil and a second secondary coil, wherein the first transformer has a built-in first excitation inductor, and the first main coil is used to receive the rectified potential; The second transformer has a built-in second exciting inductor, and the second main coil is used to receive the rectified potential; a second power switch selectively couples the second main coil to the ground potential according to the pulse width modulation potential; an output stage circuit is coupled to the first secondary coil and the second secondary coil and generates an output potential; and a detection and control circuit generates the pulse width modulation potential and detects a temperature parameter related to the first transformer, wherein the detection and control circuit further selectively enables or disables the second transformer and the second power switch according to the temperature parameter.
為讓本發明之目的、特徵和優點能更明顯易懂,下文特舉出本發明之具體實施例,並配合所附圖式,作詳細說明如下。In order to make the purpose, features and advantages of the present invention more clearly understood, specific embodiments of the present invention are specifically listed below and described in detail with reference to the accompanying drawings.
在說明書及申請專利範圍當中使用了某些詞彙來指稱特定的元件。本領域技術人員應可理解,硬體製造商可能會用不同的名詞來稱呼同一個元件。本說明書及申請專利範圍並不以名稱的差異來作為區分元件的方式,而是以元件在功能上的差異來作為區分的準則。在通篇說明書及申請專利範圍當中所提及的「包含」及「包括」一詞為開放式的用語,故應解釋成「包含但不僅限定於」。「大致」一詞則是指在可接受的誤差範圍內,本領域技術人員能夠在一定誤差範圍內解決所述技術問題,達到所述基本之技術效果。此外,「耦接」一詞在本說明書中包含任何直接及間接的電性連接手段。因此,若文中描述一第一裝置耦接至一第二裝置,則代表該第一裝置可直接電性連接至該第二裝置,或經由其它裝置或連接手段而間接地電性連接至該第二裝置。Certain terms are used in the specification and patent application to refer to specific components. Those skilled in the art should understand that hardware manufacturers may use different terms to refer to the same component. This specification and patent application do not use differences in names as a way to distinguish components, but use differences in the functions of components as the criterion for distinction. The words "include" and "including" mentioned throughout the specification and patent application are open terms and should be interpreted as "including but not limited to". The word "substantially" means that within an acceptable error range, those skilled in the art can solve the technical problem within a certain error range and achieve the basic technical effect. In addition, the word "coupled" in this specification includes any direct and indirect electrical connection means. Therefore, if a first device is described herein as being coupled to a second device, it means that the first device may be directly electrically connected to the second device, or may be indirectly electrically connected to the second device via other devices or connection means.
第1圖係顯示根據本發明一實施例所述之電源供應器100之示意圖。例如,電源供應器100可應用於桌上型電腦、筆記型電腦,或一體成形電腦。如第1圖所示,電源供應器100包括:一橋式整流器110、一第一變壓器120、一第一功率切換器130、一第二變壓器140、一第二功率切換器150、一輸出級電路160,以及一偵測及控制電路170。必須注意的是,雖然未顯示於第1圖中,但電源供應器100更可包括其他元件,例如:一穩壓器或(且)一負回授電路。FIG. 1 is a schematic diagram showing a
橋式整流器110可根據一第一輸入電位VIN1和一第二輸入電位VIN2來產生一整流電位VR,其中第一輸入電位VIN1和第二輸入電位VIN2之間可形成具有任意頻率和任意振幅之一交流電壓。例如,交流電壓之頻率可約為50Hz或60Hz,而交流電壓之方均根值可約由90V至264V,但亦不僅限於此。第一變壓器120包括一第一主線圈121和一第一副線圈122。第一變壓器120更可內建一第一激磁電感器LM1,其中第一主線圈121和第一激磁電感器LM1皆可位於第一變壓器120之同一側,而第一副線圈122則可位於第一變壓器120之相對另一側。第一主線圈121可接收整流電位VR,而第一副線圈122則可回應於整流電位VR來進行操作。第一功率切換器130可根據一脈波寬度調變電位VM來選擇性地將第一主線圈121耦接至一接地電位VSS(例如:0V)。例如,若脈波寬度調變電位VM為高邏輯位準,則第一功率切換器130可將第一主線圈121耦接至接地電位VSS(亦即,第一功率切換器130可近似於一短路路徑);反之,若脈波寬度調變電位VM為低邏輯位準,則第一功率切換器130不會將第一主線圈121耦接至接地電位VSS(亦即,第一功率切換器130可近似於一斷路路徑)。相似地,第二變壓器140包括一第二主線圈141和一第二副線圈142。第二變壓器140更可內建一第二激磁電感器LM2,其中第二主線圈141和第二激磁電感器LM2皆可位於第二變壓器140之同一側,而第二副線圈142則可位於第二變壓器140之相對另一側。第二主線圈141可接收整流電位VR,而第二副線圈142則可回應於整流電位VR來進行操作。第二功率切換器150可根據脈波寬度調變電位VM來選擇性地將第二主線圈141耦接至接地電位VSS。例如,若脈波寬度調變電位VM為高邏輯位準,則第二功率切換器150可將第二主線圈141耦接至接地電位VSS(亦即,第二功率切換器150可近似於一短路路徑);反之,若脈波寬度調變電位VM為低邏輯位準,則第二功率切換器150不會將第二主線圈141耦接至接地電位VSS(亦即,第二功率切換器150可近似於一斷路路徑)。輸出級電路160係耦接至第一副線圈122和第二副線圈142,並可用於產生一輸出電位VOUT,例如,輸出電位VOUT可為一直流電位,其電位位準可介於18V至20V之間,但亦不僅限於此。偵測及控制電路170可產生前述之脈波寬度調變電位VM,並可偵測關於第一變壓器120之一溫度參數TP。例如,溫度參數TP可為一電位、一電流,或是任意種類之一信號,其係與第一變壓器120之操作溫度互相關聯。偵測及控制電路170更可根據溫度參數TP來選擇性地致能或禁能第二變壓器140和第二功率切換器150。在此設計下,即使第一變壓器120之操作溫度發生變化,偵測及控制電路170仍可藉由選擇性地使用第二變壓器140來適當調整第一變壓器120之一負載量。換言之,第二變壓器140可視為一輔助變壓器,其可用於分擔第一變壓器120之一部份工作量(特別是當第一變壓器120之操作溫度相對較高時)。根據實際量測結果,本發明之設計有助於避免第一變壓器120之第一激磁電感器LM1意外進入磁飽和之狀態,故電源供應器100整體之安全性及可靠度均能獲得大幅改善。The
以下實施例將介紹電源供應器100之詳細結構及操作方式。必須理解的是,這些圖式和敘述僅為舉例,而非用於限制本發明之範圍。The following embodiments will introduce the detailed structure and operation of the
第2圖係顯示根據本發明一實施例所述之電源供應器200之電路圖。在第2圖之實施例中,在第2圖之實施例中,電源供應器200具有一第一輸入節點NIN1、一第二輸入節點NIN2,以及一輸出節點NOUT,並包括:一橋式整流器210、一第一變壓器220、一第一功率切換器230、一第二變壓器240、一第二功率切換器250、一輸出級電路260,以及一偵測及控制電路270。電源供應器200之第一輸入節點NIN1和第二輸出節點NIN2可分別由一外部輸入電源處接收一第一輸入電位VIN1和一第二輸入電位VIN2,而電源供應器200之輸出節點NOUT則可用於輸出一輸出電位VOUT至一電子裝置(未顯示)。FIG. 2 is a circuit diagram of a
橋式整流器210包括一第一二極體D1、一第二二極體D2、一第三二極體D3,以及一第四二極體D4。第一二極體D1具有一陽極和一陰極,其中第一二極體D1之陽極係耦接至第一輸入節點NIN1,而第一二極體D1之陰極係耦接至一第一節點N1以輸出一整流電位VR。第二二極體D2具有一陽極和一陰極,其中第二二極體D2之陽極係耦接至第二輸入節點NIN2,而第二二極體D2之陰極係耦接至第一節點N1。第三二極體D3具有一陽極和一陰極,其中第三二極體D3之陽極係耦接至一接地電位VSS(例如:0V),而第三二極體D3之陰極係耦接至第一輸入節點NIN1。第四二極體D4具有一陽極和一陰極,其中第四二極體D4之陽極係耦接至接地電位VSS,而第四二極體D4之陰極係耦接至第二輸入節點NIN2。The
第一變壓器220包括一第一主線圈221和一第一副線圈222,其中第一變壓器220更內建一第一激磁電感器LM1。第一激磁電感器LM1可為第一變壓器220製造時所附帶產生之一固有元件,其並非一外部獨立元件。第一主線圈221和第一激磁電感器LM1皆可位於第一變壓器220之同一側(例如:一次側),而第一副線圈222則可位於第一變壓器220之相對另一側(例如:二次側,其可與一次側互相隔離開來)。第一主線圈221具有一第一端和一第二端,其中第一主線圈221之第一端係耦接至第一節點N1以接收整流電位VR,而第一主線圈221之第二端係耦接至一第二節點N2。第一激磁電感器LM1具有一第一端和一第二端,其中第一激磁電感器LM1之第一端係耦接至第一節點N1,而第一激磁電感器LM1之第二端係耦接至第二節點N2。第一副線圈222具有一第一端和一第二端,其中第一副線圈222之第一端係耦接至一第三節點N3,而第一副線圈222之第二端係耦接至一共同節點NCM。例如,共同節點NCM可視為另一接地電位,其可與前述之接地電位VSS相同或相異。The
第一功率切換器230包括一第一電晶體M1。例如,第一電晶體M1可為一N型金氧半場效電晶體(N-type Metal-Oxide-Semiconductor Field-Effect Transistor,NMOSFET)。第一電晶體M1具有一控制端(例如:一閘極)、一第一端(例如:一源極),以及一第二端(例如:一汲極),其中第一電晶體M1之控制端係用於接收一脈波寬度調變電位VM,第一電晶體M1之第一端係耦接至接地電位VSS,而第一電晶體M1之第二端係耦接至第二節點N2。The
第二變壓器240包括一第二主線圈241和一第二副線圈242,其中第二變壓器240更內建一第二激磁電感器LM2。第二激磁電感器LM2可為第二變壓器240製造時所附帶產生之一固有元件,其並非一外部獨立元件。第二主線圈241和第二激磁電感器LM2皆可位於第二變壓器240之同一側(例如:一次側),而第二副線圈242則可位於第二變壓器240之相對另一側(例如:二次側)。第二主線圈241具有一第一端和一第二端,其中第二主線圈241之第一端係耦接至第一節點N1以接收整流電位VR,而第二主線圈241之第二端係耦接至一第四節點N4。第二激磁電感器LM2具有一第一端和一第二端,其中第二激磁電感器LM2之第一端係耦接至第一節點N1,而第二激磁電感器LM2之第二端係耦接至第四節點N4。第二副線圈242具有一第一端和一第二端,其中第二副線圈242之第一端係耦接至一第五節點N5,而第二副線圈242之第二端係耦接至共同節點NCM。The
第二功率切換器250包括一第二電晶體M2。例如,第二電晶體M2可為一N型金氧半場效電晶體。第二電晶體M2具有一控制端(例如:一閘極)、一第一端(例如:一源極),以及一第二端(例如:一汲極),其中第二電晶體M2之控制端係用於接收脈波寬度調變電位VM,第二電晶體M2之第一端係耦接至一第六節點N6,而第二電晶體M2之第二端係耦接至第四節點N4。The
輸出級電路260包括一第五二極體D5、一第六二極體D6,以及一輸出電容器CO。第五二極體D5具有一陽極和一陰極,其中第五二極體D5之陽極係耦接至第三節點N3,而第五二極體D5之陰極係耦接至輸出節點NOUT。第六二極體D6具有一陽極和一陰極,其中第六二極體D6之陽極係耦接至第五節點N5,而第六二極體D6之陰極係耦接至輸出節點NOUT。輸出電容器CO具有一第一端和一第二端,其中輸出電容器CO之第一端係耦接至輸出節點NOUT,而輸出電容器CO之第二端係耦接至共同節點NCM。The
偵測及控制電路270包括一第三電晶體M3、一第四電晶體M4、一第一電阻器R1、一第二電阻器R2、一微控制器(Microcontroller Unit,MCU)275,以及一負溫度係數(Negative Temperature Coefficient,NTC)電阻器RN。第三電晶體M3和第四電晶體M4可各自為一N型金氧半場效電晶體。微控制器275可用於產生前述之脈波寬度調變電位VM。例如,脈波寬度調變電位VM於電源供應器200初始化時可維持於一固定電位,而在電源供應器200進入正常使用階段後則可提供週期性之時脈波形。The detection and
第一電阻器R1具有一第一端和一第二端,其中第一電阻器R1之第一端係耦接至一第一控制節點NC1以接收一第一控制電位VC1,而第一電阻器R1之第二端係耦接一第七節點N7。第三電晶體M3具有一控制端(例如:一閘極)、一第一端(例如:一源極),以及一第二端(例如:一汲極),其中第三電晶體M3之控制端係耦接至第七節點N7,第三電晶體M3之第一端係耦接至接地電位VSS,而第三電晶體M3之第二端係耦接至第六節點N6。The first resistor R1 has a first end and a second end, wherein the first end of the first resistor R1 is coupled to a first control node NC1 to receive a first control potential VC1, and the second end of the first resistor R1 is coupled to a seventh node N7. The third transistor M3 has a control end (e.g., a gate), a first end (e.g., a source), and a second end (e.g., a drain), wherein the control end of the third transistor M3 is coupled to the seventh node N7, the first end of the third transistor M3 is coupled to the ground potential VSS, and the second end of the third transistor M3 is coupled to the sixth node N6.
第二電阻器R2具有一第一端和一第二端,其中第二電阻器R2之第一端係耦接至一第二控制節點NC2以接收一第二控制電位VC2,而第二電阻器R2之第二端係耦接一第八節點N8。第四電晶體M4具有一控制端(例如:一閘極)、一第一端(例如:一源極),以及一第二端(例如:一汲極),其中第四電晶體M4之控制端係耦接至第八節點N8,第四電晶體M4之第一端係耦接至接地電位VSS,而第四電晶體M4之第二端係耦接至第七節點N7。The second resistor R2 has a first end and a second end, wherein the first end of the second resistor R2 is coupled to a second control node NC2 to receive a second control potential VC2, and the second end of the second resistor R2 is coupled to an eighth node N8. The fourth transistor M4 has a control end (e.g., a gate), a first end (e.g., a source), and a second end (e.g., a drain), wherein the control end of the fourth transistor M4 is coupled to the eighth node N8, the first end of the fourth transistor M4 is coupled to the ground potential VSS, and the second end of the fourth transistor M4 is coupled to the seventh node N7.
負溫度係數電阻器RN具有一第一端和一第二端,其中負溫度係數電阻器RN之第一端係耦接至一偵測節點ND,而負溫度係數電阻器RN之第二端係耦接共同節點NCM。必須注意的是,負溫度係數電阻器RN係鄰近於第一副線圈222而設置。例如,負溫度係數電阻器RN和第一副線圈222兩者之間距可小於或等於5mm,但亦不僅限於此。在一些實施例中,若第一變壓器220之操作溫度上升,則負溫度係數電阻器RN之電阻值將會變小;反之,若第一變壓器220之操作溫度下降,則負溫度係數電阻器RN之電阻值將會變大。The negative temperature coefficient resistor RN has a first end and a second end, wherein the first end of the negative temperature coefficient resistor RN is coupled to a detection node ND, and the second end of the negative temperature coefficient resistor RN is coupled to the common node NCM. It should be noted that the negative temperature coefficient resistor RN is arranged adjacent to the first secondary coil 222. For example, the distance between the negative temperature coefficient resistor RN and the first secondary coil 222 may be less than or equal to 5 mm, but is not limited thereto. In some embodiments, if the operating temperature of the
微控制器275更可輸出一偵測電流ID至偵測節點ND,並可再偵測此偵測節點ND處之一回授電位VF,其中微控制器275更可根據回授電位VF和輸出電位VOUT來產生前述之第一控制電位VC1和第二控制電位VC2。例如,偵測電流ID可大致具有一固定電流值。根據歐姆定律,微控制器275將可藉由分析回授電位VF來估算出負溫度係數電阻器RN之電阻值和第一變壓器220之對應操作溫度。另外,輸出電位VOUT則可用於指示電源供應器200是否處於一正常狀態。例如,若輸出電位VOUT介於一電位下限值VL和一電位上限值VH之間,則微控制器275將可判斷電源供應器200處於正常狀態;否則,微控制器275將可判斷電源供應器200處於一異常狀態。The
第3圖係顯示根據本發明一實施例所述之電源供應器200之信號波形圖,其中橫軸代表時間,而縱軸代表電流值或電位位準。根據第3圖之量測結果,電源供應器200可操作於一第一階段T1、一第二階段T2,或是一第三階段T3,其操作原理可分別如下列所述。FIG. 3 is a signal waveform diagram of a
第一階段T1可視為電源供應器200之一初始階段。在第一階段T1期間,第一變壓器220之操作溫度相對較低,而回授電位VF則相對較高。此時,第一控制電位VC1和第二控制電位VC2皆維持於低邏輯位準,以禁能第二變壓器240和第二功率切換器250。亦即,僅有第一變壓器220和第一功率切換器230正常運作。The first stage T1 can be regarded as an initial stage of the
接著,第一變壓器220之操作溫度逐漸升高,而回授電位VF則逐漸降低。微控制器275可持續地監控回授電位VF。在一些實施例中,若偵測到回授電位VF低於或等於一第一臨界電位VTH1,則微控制器275將會切換第一控制電位VC1至高邏輯位準。在另一些實施例中,若偵測到回授電位VF於單位時間內下降一特定比例(例如,於1μs之時間內,回授電位VF下降達40%或更多),則微控制器275亦會切換第一控制電位VC1至高邏輯位準。此時,電源供應器200將離開第一階段T1且進入第二階段T2。Then, the operating temperature of the
在第二階段T2期間,第一控制電位VC1維持於高邏輯位準,且第二控制電位VC2維持於低邏輯位準。此時,第二變壓器240和第二功率切換器250均被致能,使得通過第二激磁電感器LM2之一電感電流IL出現上下振盪之電流波形。由於第二變壓器240之加入可減少第一變壓器220之一負載量,故第一變壓器220之操作溫度會逐漸降低,此將能避免第一激磁電感器LM1意外進入磁飽和狀態。在一些實施例中,第二變壓器240之繞線匝數係至少為第一變壓器220之繞線匝數之1.5倍,且第二激磁電感器LM2之電感值亦至少為第一激磁電感器LM1之電感值之1.5倍。During the second stage T2, the first control potential VC1 is maintained at a high logic level, and the second control potential VC2 is maintained at a low logic level. At this time, the
在一些實施例中,若偵測到回授電位VF回升且高於或等於一第二臨界電位VTH2,則微控制器275將會切換第一控制電位VC1至低邏輯位準,並切換第二控制電位VC2至高邏輯位準。此時,電源供應器200將離開第二階段T2且進入第三階段T3。例如,第二臨界電位VTH2可高於第一臨界電位VTH1至少0.5V,以降低誤判之機率。In some embodiments, if the feedback potential VF is detected to rise and is higher than or equal to a second critical potential VTH2, the
在第三階段T3期間,導通之第四電晶體M4可針對第七節點N7進行快速放電,使得第七節點N7處之一電位V7於極短時間內下降至低邏輯位準。是以,第三電晶體M3會被快速關閉,且不致因其控制端處之非理想寄生電容而產生非理想之切換延遲。此時,第二變壓器240和第二功率切換器250再度被禁能,而僅有第一變壓器220和第一功率切換器230正常運作。During the third phase T3, the turned-on fourth transistor M4 can quickly discharge the seventh node N7, so that the potential V7 at the seventh node N7 drops to a low logic level in a very short time. Therefore, the third transistor M3 will be quickly turned off, and will not produce an undesirable switching delay due to the undesirable parasitic capacitance at its control end. At this time, the
在一些實施例中,僅有當輸出電位VOUT介於電位下限值VL和電位上限值VH之間時,微控制器275才會執行前述之判斷及操作程序。然而,本發明亦不僅限於此。In some embodiments, the
第4圖係顯示根據本發明一實施例所述之第一激磁電感器LM1之操作特性圖,其中橫軸代表第一激磁電感器LM1之磁場強度H (單位:A/m),而縱軸代表第一激磁電感器LM1之磁通量密度B (單位:T)。如第4圖所示,一第一曲線CC1代表第一變壓器220之操作溫度相對較低時之第一激磁電感器LM1之特性,而一第二曲線CC2代表第一變壓器220之操作溫度相對較高時之第一激磁電感器LM1之特性。根據第4圖之量測結果,即使第一變壓器220之操作溫度發生變化,第一激磁電感器LM1之特性仍將僅有些許不同,故其不易進入磁飽和狀態。FIG. 4 is a graph showing the operating characteristics of the first excitation inductor LM1 according to an embodiment of the present invention, wherein the horizontal axis represents the magnetic field intensity H (unit: A/m) of the first excitation inductor LM1, and the vertical axis represents the magnetic flux density B (unit: T) of the first excitation inductor LM1. As shown in FIG. 4, a first curve CC1 represents the characteristics of the first excitation inductor LM1 when the operating temperature of the
本發明提出一種新穎之電源供應器,其可有效抑制非理想之磁飽和現象。根據實際量測結果,使用前述設計之電源供應器之安全性將可大幅提升,故其很適合應用於各種各式之裝置當中。The present invention proposes a novel power supply which can effectively suppress the non-ideal magnetic saturation phenomenon. According to actual measurement results, the safety of the power supply using the above design can be greatly improved, so it is very suitable for application in various types of devices.
值得注意的是,以上所述之電位、電流、電阻值、電感值、電容值,以及其餘元件參數均非為本發明之限制條件。設計者可以根據不同需要調整這些設定值。本發明之電源供應器並不僅限於第1-4圖所圖示之狀態。本發明可以僅包括第1-4圖之任何一或複數個實施例之任何一或複數項特徵。換言之,並非所有圖示之特徵均須同時實施於本發明之電源供應器當中。雖然本發明之實施例係使用金氧半場效電晶體為例,但本發明並不僅限於此,本技術領域人士可改用其他種類之電晶體,例如:接面場效電晶體,或是鰭式場效電晶體等等,而不致於影響本發明之效果。It is worth noting that the potential, current, resistance, inductance, capacitance, and other component parameters described above are not limiting conditions of the present invention. Designers can adjust these settings according to different needs. The power supply of the present invention is not limited to the states shown in Figures 1-4. The present invention may only include any one or more features of any one or more embodiments of Figures 1-4. In other words, not all of the features shown in the diagrams need to be implemented in the power supply of the present invention at the same time. Although the embodiments of the present invention use metal oxide semi-conductor field effect transistors as an example, the present invention is not limited to this. People in the technical field can use other types of transistors, such as junction field effect transistors, or fin field effect transistors, etc., without affecting the effects of the present invention.
在本說明書以及申請專利範圍中的序數,例如「第一」、「第二」、「第三」等等,彼此之間並沒有順序上的先後關係,其僅用於標示區分兩個具有相同名字之不同元件。Ordinal numbers in this specification and the scope of the patent application, such as "first", "second", "third", etc., have no sequential relationship with each other, and are only used to mark and distinguish two different components with the same name.
本發明雖以較佳實施例揭露如上,然其並非用以限定本發明的範圍,任何熟習此項技藝者,在不脫離本發明之精神和範圍內,當可做些許的更動與潤飾,因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。Although the present invention is disclosed as above with the preferred embodiments, it is not intended to limit the scope of the present invention. Anyone skilled in the art can make some changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the scope defined by the attached patent application.
100,200:電源供應器 110,210:橋式整流器 120,220:第一變壓器 121,221:第一主線圈 122,222:第一副線圈 130,230:第一功率切換器 140,240:第二變壓器 141,241:第二主線圈 142,242:第二副線圈 150,250:第二功率切換器 160,260:輸出級電路 170,270:偵測及控制電路 275:微控制器 B:磁通量密度 CC1:第一曲線 CC2:第二曲線 CO:輸出電容器 D1:第一二極體 D2:第二二極體 D3:第三二極體 D4:第四二極體 D5:第五二極體 D6:第六二極體 H:磁場強度 ID:偵測電流 IL:電感電流 LM1:第一激磁電感器 LM2:第二激磁電感器 M1:第一電晶體 M2:第二電晶體 M3:第三電晶體 M4:第四電晶體 N1:第一節點 N2:第二節點 N3:第三節點 N4:第四節點 N5:第五節點 N6:第六節點 N7:第七節點 N8:第八節點 NC1:第一控制節點 NC2:第二控制節點 NCM:共同節點 ND:偵測節點 NIN1:第一輸入節點 NIN2:第二輸入節點 NOUT:輸出節點 R1:第一電阻器 R2:第二電阻器 RN:負溫度係數電阻器 T1:第一階段 T2:第二階段 T3:第三階段 TP:溫度參數 V7:電位 VC1:第一控制電位 VC2:第二控制電位 VF:回授電位 VH:電位上限值 VIN1:第一輸入電位 VIN2:第二輸入電位 VL:電位上限值 VM:脈波寬度調變電位 VOUT:輸出電位 VR:整流電位 VSS:接地電位 VTH1:第一臨界電位 VTH2:第二臨界電位 100,200: Power supply 110,210: Bridge rectifier 120,220: First transformer 121,221: First main coil 122,222: First secondary coil 130,230: First power switch 140,240: Second transformer 141,241: Second main coil 142,242: Second secondary coil 150,250: Second power switch 160,260: Output stage circuit 170,270: Detection and control circuit 275: Microcontroller B: Magnetic flux density CC1: First curve CC2: Second curve CO: Output capacitor D1: First diode D2: Second diode D3: Third diode D4: fourth diode D5: fifth diode D6: sixth diode H: magnetic field strength ID: detection current IL: inductor current LM1: first excitation inductor LM2: second excitation inductor M1: first transistor M2: second transistor M3: third transistor M4: fourth transistor N1: first node N2: second node N3: third node N4: fourth node N5: fifth node N6: sixth node N7: seventh node N8: eighth node NC1: first control node NC2: second control node NCM: common node ND: detection node NIN1: first input node NIN2: second input node NOUT: output node R1: first resistor R2: second resistor RN: Negative temperature coefficient resistor T1: First stage T2: Second stage T3: Third stage TP: Temperature parameter V7: Potential VC1: First control potential VC2: Second control potential VF: Feedback potential VH: Potential upper limit VIN1: First input potential VIN2: Second input potential VL: Potential upper limit VM: Pulse width modulation potential VOUT: Output potential VR: Rectification potential VSS: Ground potential VTH1: First critical potential VTH2: Second critical potential
第1圖係顯示根據本發明一實施例所述之電源供應器之示意圖。 第2圖係顯示根據本發明一實施例所述之電源供應器之電路圖。 第3圖係顯示根據本發明一實施例所述之電源供應器之信號波形圖。 第4圖係顯示根據本發明一實施例所述之第一激磁電感器之操作特性圖。 FIG. 1 is a schematic diagram showing a power supply according to an embodiment of the present invention. FIG. 2 is a circuit diagram showing a power supply according to an embodiment of the present invention. FIG. 3 is a signal waveform diagram showing a power supply according to an embodiment of the present invention. FIG. 4 is an operating characteristic diagram showing a first excitation inductor according to an embodiment of the present invention.
100:電源供應器 110:橋式整流器 120:第一變壓器 121:第一主線圈 122:第一副線圈 130:第一功率切換器 140:第二變壓器 141:第二主線圈 142:第二副線圈 150:第二功率切換器 160:輸出級電路 170:偵測及控制電路 LM1:第一激磁電感器 LM2:第二激磁電感器 TP:溫度參數 VIN1:第一輸入電位 VIN2:第二輸入電位 VM:脈波寬度調變電位 VOUT:輸出電位 VR:整流電位 VSS:接地電位 100: Power supply 110: Bridge rectifier 120: First transformer 121: First main coil 122: First secondary coil 130: First power switch 140: Second transformer 141: Second main coil 142: Second secondary coil 150: Second power switch 160: Output stage circuit 170: Detection and control circuit LM1: First excitation inductor LM2: Second excitation inductor TP: Temperature parameter VIN1: First input potential VIN2: Second input potential VM: Pulse width modulation potential VOUT: Output potential VR: Rectification potential VSS: Ground potential
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KR20150131981A (en) * | 2014-05-15 | 2015-11-25 | 티디케이가부시기가이샤 | Ferrite core, electronic component, and power supply device |
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