TWI837044B - Exposure method - Google Patents
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- TWI837044B TWI837044B TW112128113A TW112128113A TWI837044B TW I837044 B TWI837044 B TW I837044B TW 112128113 A TW112128113 A TW 112128113A TW 112128113 A TW112128113 A TW 112128113A TW I837044 B TWI837044 B TW I837044B
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- 238000000034 method Methods 0.000 title claims abstract description 62
- 239000000758 substrate Substances 0.000 claims abstract description 58
- 238000000059 patterning Methods 0.000 claims abstract description 18
- 239000000463 material Substances 0.000 claims description 28
- 229920002120 photoresistant polymer Polymers 0.000 claims description 21
- 239000011347 resin Substances 0.000 claims description 21
- 229920005989 resin Polymers 0.000 claims description 21
- 229920000642 polymer Polymers 0.000 claims description 13
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 claims description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 6
- 150000001875 compounds Chemical class 0.000 claims description 6
- 238000000206 photolithography Methods 0.000 claims description 6
- 239000010936 titanium Substances 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- 239000006229 carbon black Substances 0.000 claims description 4
- FWLHAQYOFMQTHQ-UHFFFAOYSA-N 2-N-[8-[[8-(4-aminoanilino)-10-phenylphenazin-10-ium-2-yl]amino]-10-phenylphenazin-10-ium-2-yl]-8-N,10-diphenylphenazin-10-ium-2,8-diamine hydroxy-oxido-dioxochromium Chemical compound O[Cr]([O-])(=O)=O.O[Cr]([O-])(=O)=O.O[Cr]([O-])(=O)=O.Nc1ccc(Nc2ccc3nc4ccc(Nc5ccc6nc7ccc(Nc8ccc9nc%10ccc(Nc%11ccccc%11)cc%10[n+](-c%10ccccc%10)c9c8)cc7[n+](-c7ccccc7)c6c5)cc4[n+](-c4ccccc4)c3c2)cc1 FWLHAQYOFMQTHQ-UHFFFAOYSA-N 0.000 claims description 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 3
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 claims description 3
- 229910000423 chromium oxide Inorganic materials 0.000 claims description 3
- 239000012860 organic pigment Substances 0.000 claims description 3
- 229920000767 polyaniline Polymers 0.000 claims description 3
- ANRHNWWPFJCPAZ-UHFFFAOYSA-M thionine Chemical compound [Cl-].C1=CC(N)=CC2=[S+]C3=CC(N)=CC=C3N=C21 ANRHNWWPFJCPAZ-UHFFFAOYSA-M 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 2
- 239000003292 glue Substances 0.000 claims 2
- 238000004519 manufacturing process Methods 0.000 description 18
- 238000005516 engineering process Methods 0.000 description 12
- 238000010586 diagram Methods 0.000 description 8
- 230000003287 optical effect Effects 0.000 description 5
- 238000000576 coating method Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000001127 nanoimprint lithography Methods 0.000 description 2
- 101100012902 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) FIG2 gene Proteins 0.000 description 1
- 239000011358 absorbing material Substances 0.000 description 1
- 230000003190 augmentative effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/18—Diffraction gratings
- G02B5/1847—Manufacturing methods
- G02B5/1857—Manufacturing methods using exposure or etching means, e.g. holography, photolithography, exposure to electron or ion beams
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/76—Patterning of masks by imaging
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Optics & Photonics (AREA)
- Diffracting Gratings Or Hologram Optical Elements (AREA)
Abstract
Description
本發明係有關於一種曝光方法，尤其係指一種提高光聚合物(photopolymer)曝光精準度的方法。The present invention relates to an exposure method, and more particularly to a method for improving the exposure accuracy of photopolymer.
擴增實境(Augmented Reality, AR)技術為次世代顯示技術，已開始應用於AR眼鏡等產品上，而光波導技術則為AR眼鏡關鍵技術之一。就現有技術而言，光波導技術中主要以幾何波導與繞射波導為主流。在繞射光波導技術中，屬表面浮雕光柵(Surface Relief Grating, SRG)技術與體積全像光學元件(Volume Holographic Optical Element, VHOE)技術的設計門檻較高，兩者皆是製作光柵使光線產生繞射，達到光波導之效果。其中，VHOE技術所用材料基本是感光樹脂(Photopolymer)，利用兩道雷射光產生干涉條紋曝光形成光柵圖形。Augmented Reality (AR) technology is a next-generation display technology that has begun to be used in products such as AR glasses, and optical waveguide technology is one of the key technologies of AR glasses. As far as the existing technology is concerned, geometric waveguides and diffraction waveguides are the mainstream in optical waveguide technology. Among the diffraction light waveguide technologies, Surface Relief Grating (SRG) technology and Volume Holographic Optical Element (VHOE) technology have higher design thresholds. Both of them make gratings to cause light to diffuse. radiate to achieve the effect of optical waveguide. Among them, the material used in VHOE technology is basically photopolymer, which uses two laser lights to generate interference fringes and expose them to form grating patterns.
就VHOE技術而言，乃是先將一層有機薄膜塗在玻璃基底上，然後透過兩個雷射光束，產生干涉條紋對薄膜進行曝光，明暗干涉條紋會引起材料不同的曝光特性，導致薄膜內出現折射率差(Δn, index contrast)，即生成了週期性的繞射光柵。As far as VHOE technology is concerned, a layer of organic thin film is first coated on a glass substrate, and then two laser beams are used to generate interference fringes to expose the film. The light and dark interference fringes will cause different exposure characteristics of the material, resulting in the appearance of The refractive index difference (Δn, index contrast) generates a periodic diffraction grating.
然而，由於感光樹脂需雷射光束精準對位並進行曝光，且VHOE技術需兩個雷射光束產生所需之干涉條紋，但是環境中有各種振動幹擾源(如馬達運作、聲波、氣流等)，皆會使雷射光束產生偏移，影響感光樹脂光柵品質，造成所需光柵與設計規格偏離。尤其是，振動會使曝光區光柵寬度改變，影響光柵週期與折射率差值，進而影響設計。舉例來說，當折射率差值降低，即會影響光波導路徑，使良率下降進而使製造成本提高。However, since the photosensitive resin requires precise alignment of the laser beam and exposure, and VHOE technology requires two laser beams to generate the required interference fringes, there are various vibration interference sources in the environment (such as motor operation, sound waves, air flow, etc.), which will cause the laser beam to deviate, affecting the quality of the photosensitive resin grating, causing the required grating to deviate from the design specifications. In particular, vibration will change the grating width in the exposure area, affecting the grating period and refractive index difference, and thus affecting the design. For example, when the refractive index difference decreases, it will affect the optical waveguide path, causing the yield to drop and the manufacturing cost to increase.
因此，如何提供一個能解決上述問題之曝光方法，乃是業界所需思考的重要課題。Therefore, how to provide an exposure method that can solve the above problems is an important issue that the industry needs to think about.
有鑑於此，本揭露之一態樣係提供一種曝光方法，包含：在一第一基板上形成一圖案化之遮光層，以製成一光罩，其中該第一基板為透明基板；以及利用一雷射光經由該光罩對一第二基板上之一光敏層進行一圖案化製程，以製成一光柵，其中，該圖案化之遮光層控制該光敏層接受該雷射光曝光的角度以及比例，使得該光敏層經圖案化後的一遮光區以及一曝光區具有不同的折射率。In view of this, an aspect of the present disclosure provides an exposure method, which includes: forming a patterned light-shielding layer on a first substrate to form a photomask, wherein the first substrate is a transparent substrate; and using A laser light passes through the photomask to perform a patterning process on a photosensitive layer on a second substrate to form a grating, wherein the patterned light shielding layer controls the angle and proportion at which the photosensitive layer is exposed to the laser light. , so that a light-shielding area and an exposure area after patterning of the photosensitive layer have different refractive indexes.
根據本揭露之一個或多個實施方式，其中該光敏層係由一光致變折射率之材料構成。According to one or more embodiments of the present disclosure, the photosensitive layer is made of a material with a photovariable refractive index.
根據本揭露之一個或多個實施方式，其中該光敏層係由光聚合物(photopolymer)構成，而該光聚合物為高分子聚合物、高分子交聯化合物、高分子摻雜材料、或溶膠-凝膠材料。According to one or more embodiments of the present disclosure, the photosensitive layer is composed of a photopolymer, and the photopolymer is a high molecular polymer, a high molecular cross-linked compound, a high molecular doped material, or a sol-gel material.
根據本揭露之一個或多個實施方式，其中該圖案化之遮光層係由黑色光阻或奈米壓印遮光型樹脂構成。According to one or more embodiments of the present disclosure, the patterned light-shielding layer is composed of black photoresist or nano-imprinted light-shielding resin.
根據本揭露之一個或多個實施方式，其中該圖案化之遮光層係由花菁黑、苯胺黑、碳黑、氧化鉻、氧化鐵、鈦黑、氧氮化鈦、氮化鈦、或混色有機顏料構成。According to one or more embodiments of the present disclosure, the patterned light-shielding layer is composed of cyanine black, aniline black, carbon black, chromium oxide, iron oxide, titanium black, titanium oxynitride, titanium nitride, or mixed color organic pigments.
本揭露之另一態樣係提供一種曝光方法，包含：在一第一基板上形成一圖案化之遮光層，以製成一光罩，其中該第一基板為透明基板；以及利用一雷射光經由該光罩對一第二基板上之一光敏層進行一圖案化製程，以製成一光柵，其中，該圖案化之遮光層控制該光敏層接受該雷射光曝光的角度以及比例，使得該光敏層經圖案化後的一遮光區以及一曝光區具有不同的折射率，且該曝光區與該遮光區折射率差係介於0.0001~0.5之間。Another aspect of the present disclosure provides an exposure method, including: forming a patterned light-shielding layer on a first substrate to form a photomask, wherein the first substrate is a transparent substrate; and using a laser light A patterning process is performed on a photosensitive layer on a second substrate through the photomask to form a grating, wherein the patterned light shielding layer controls the angle and proportion at which the photosensitive layer is exposed to the laser light, so that the A light-shielding area and an exposure area after patterning of the photosensitive layer have different refractive indexes, and the refractive index difference between the exposure area and the light-shielding area is between 0.0001 and 0.5.
根據本揭露之一個或多個實施方式，其中該圖案化之遮光層係由黑色光阻或奈米壓印遮光型樹脂構成。According to one or more embodiments of the present disclosure, the patterned light-shielding layer is composed of black photoresist or nano-imprinted light-shielding resin.
根據本揭露之一個或多個實施方式，其中該光敏層係由光聚合物(photopolymer)構成，而該光聚合物為高分子聚合物、高分子交聯化合物、高分子摻雜材料、或溶膠-凝膠材料。According to one or more embodiments of the present disclosure, the photosensitive layer is composed of a photopolymer, and the photopolymer is a high molecular polymer, a high molecular cross-linked compound, a high molecular doped material, or a sol-gel material.
本揭露之另一態樣係提供一種曝光方法，包含：在一第一基板上形成一圖案化之遮光層，以製成一光罩，其中該第一基板為透明基板，其中該圖案化之遮光層的解析度介於100nm~30μm之間；以及利用一雷射光經由該光罩對一第二基板上之一光敏層進行一圖案化製程，以製成一光柵，其中，該圖案化之遮光層控制該光敏層接受該雷射光曝光的角度以及比例，使得該光敏層經圖案化後的一遮光區以及一曝光區具有不同的折射率，且該曝光區與該遮光區折射率差係介於0.0001~0.5之間。Another aspect of the present disclosure provides an exposure method, including: forming a patterned light-shielding layer on a first substrate to form a photomask, wherein the first substrate is a transparent substrate, and the patterned The resolution of the light-shielding layer is between 100 nm and 30 μm; and a laser light is used to perform a patterning process on a photosensitive layer on a second substrate through the mask to form a grating, wherein the patterned The light-shielding layer controls the angle and proportion at which the photosensitive layer is exposed to the laser light, so that a light-shielding area and an exposure area of the photosensitive layer after patterning have different refractive indexes, and the refractive index difference between the exposure area and the light-shielding area is Between 0.0001~0.5.
本揭露之另一態樣係提供一種曝光方法，包含：提供一光罩，該光罩由一透明基板以及其上一圖案化之遮光層構成；以及利用一同調性高之光線經由該光罩將另一基板上之一光敏層圖案化，以形成一圖案具有折射率差異的光柵；其中，該圖案化之遮光層的解析度介於100nm~30μm之間。Another aspect of the present disclosure is to provide an exposure method, comprising: providing a mask, the mask being composed of a transparent substrate and a patterned light-shielding layer thereon; and using highly homophonic light to pattern a photosensitive layer on another substrate through the mask to form a grating with a pattern having a refractive index difference; wherein the resolution of the patterned light-shielding layer is between 100nm and 30μm.
根據本揭露之一個或多個實施方式，其中，當該圖案化之遮光層的材料為正型或負型光阻時，係以一微影製程製作該圖案化之遮光層；當該圖案化之遮光層的材料為遮光型樹脂時，則以一奈米壓印製程製作該圖案化之遮光層。According to one or more embodiments of the present disclosure, when the material of the patterned light-shielding layer is a positive or negative photoresist, the patterned light-shielding layer is manufactured by a lithography process; when the material of the patterned light-shielding layer is a light-shielding resin, the patterned light-shielding layer is manufactured by a nano-imprinting process.
根據本揭露之一個或多個實施方式，其中該雷射光源係一或多個來源，而該光柵係為一維、二維或三維光柵。According to one or more embodiments of the present disclosure, the laser light source is one or more sources, and the grating is a one-dimensional, two-dimensional or three-dimensional grating.
為便貴審查委員能對本發明之目的、形狀、構造裝置特徵及其功效，做更進一步之認識與瞭解，茲舉實施例配合圖式，詳細說明如下。In order to facilitate the review committee to have a further understanding of the purpose, shape, structural device characteristics and functions of the present invention, the detailed description is as follows with reference to the embodiments and drawings.
以下揭露提供不同的實施例或示例，以建置所提供之標的物的不同特徵。以下敘述之成分以及排列方式的特定示例是為了簡化本公開，目的不在於構成限制；元件的尺寸和形狀亦不被揭露之範圍或數值所限制，但可以取決於元件之製程條件或所需的特性。例如，利用剖面圖描述本發明的技術特徵，這些剖面圖是理想化的實施例示意圖。因而，由於製造工藝和/公差而導致圖示之形狀不同是可以預見的，不應為此而限定。The following disclosure provides different embodiments or examples to achieve different features of the provided subject matter. The specific examples of components and arrangements described below are for simplifying the present disclosure and are not intended to be limiting; the size and shape of the components are not limited by the disclosed range or numerical value, but may depend on the process conditions of the components or the required requirements. characteristic. For example, cross-sectional views are used to describe the technical features of the present invention, and these cross-sectional views are schematic diagrams of idealized embodiments. Therefore, variations in the shapes shown in the illustrations due to manufacturing processes and/or tolerances are to be expected and should not be limited thereby.
再者，空間相對性用語，例如「下方」、「在…之下」、「低於」、「在…之上」以及「高於」等，是為了易於描述圖式中所繪示的元素或特徵之間的關係；此外，空間相對用語除了圖示中所描繪的方向，還包含元件在使用或操作時的不同方向。Furthermore, spatially relative terms such as "below", "below", "below", "above" and "above" are used to easily describe the elements depicted in the diagram. or the relationship between features; in addition, spatially relative terms include the orientation depicted in the illustrations, but also encompass the different orientations of components in use or operation.
首先要說明的是，相較於現有技術而言，本發明之實施例中曝光方法主要是利用具有超高解析度的遮光材料，限制雷射光曝光區域，搭配感光聚合物(photopolymer)以製作出折射率差異之光柵圖案(或稱「光柵圖形」)。在本案之說明書中，所謂超高解析度係介於100nm~30μm之間的解析度。另外，要特別說明的是，本案之說明書中所載感光聚合物(photopolymer)乃是所謂的「光致變折射率之材料」，係指經曝光後會產生折射率差的材料。另外，所謂「限制雷射光曝光區域」指的是遮光層控制感光聚合物(photopolymer)等光敏層接受雷射光等光源曝光的角度以及比例。First of all, it should be noted that compared with the prior art, the exposure method in the embodiment of the present invention mainly uses ultra-high resolution light-shielding materials to limit the laser light exposure area, and uses photopolymers to produce Grating pattern (or "grating pattern") with differences in refractive index. In the description of this case, the so-called ultra-high resolution refers to a resolution between 100nm and 30μm. In addition, it should be noted that the photopolymer mentioned in the description of this case is the so-called "photo-induced refractive index material", which refers to a material that produces a refractive index difference after exposure. In addition, the so-called "limiting laser light exposure area" refers to the light-shielding layer controlling the angle and proportion at which a photosensitive layer such as a photopolymer is exposed to light sources such as laser light.
再者，要進一步說明的是，本發明之實施例中曝光方法的特點如下但不限於：Furthermore, it should be further explained that the characteristics of the exposure method in the embodiments of the present invention are as follows but are not limited to:
其一，利用具有超高解析度的遮光層，限制雷射光照射區。遮光層可為超高解析黑色光阻或奈米壓印遮光型樹脂，而超高解析黑色光阻或奈米壓印遮光型樹脂的組成可為碳黑、有機染料等遮光吸光材料。在本發明之實施例中，遮光層可透過微影製程製作圖案，或利用奈米壓印(Nanoimprint Lithography，NIL)製程製作圖案。遮光層製作方法若是微影製程的話，乃是先於透明基板上塗佈遮光型光阻，接著以UV光(即紫外光)進行曝光以形成所需圖案，之後藉由顯影步驟去除非圖案區後，執行硬烤進行固化交聯的步驟，即形成遮光圖案。另外，遮光層製作方法若是奈米壓印製程的話，則是以奈米壓印模具將樹脂(resin)成形，並於脫模後以UV光將樹脂固化，而形成遮光圖案即圖案化之遮光層。First, a light-shielding layer with ultra-high resolution is used to limit the laser light irradiation area. The light-shielding layer can be ultra-high resolution black photoresist or nano-imprint light-shielding resin, and the composition of ultra-high resolution black photoresist or nano-imprint light-shielding resin can be carbon black, organic dyes and other light-shielding and light-absorbing materials. In embodiments of the present invention, the light-shielding layer can be patterned through a photolithography process, or can be patterned using a Nanoimprint Lithography (NIL) process. If the light-shielding layer is made by a photolithography process, the light-shielding photoresist is first coated on the transparent substrate, and then exposed to UV light (i.e. ultraviolet light) to form the desired pattern, and then the non-pattern area is removed through a development step. Finally, the step of hard baking is performed to solidify and cross-link, that is, a light-shielding pattern is formed. In addition, if the production method of the light-shielding layer is a nanoimprinting process, the resin is formed using a nanoimprinting mold, and after demoulding, the resin is cured with UV light to form a light-shielding pattern, that is, patterned light-shielding. layer.
其二，圖案化之遮光層也具備對位功能。用於雷射、光柵位置、與材料間之定位，進而提高對位曝光之精準性。Secondly, the patterned light-shielding layer also has an alignment function. Used to position the laser, grating position, and material to improve the accuracy of alignment exposure.
本發明之實施例中曝光方法可以降低曝光光源之振動幹擾，提高曝光後圖案生成之良率。The exposure method in the embodiment of the present invention can reduce the vibration interference of the exposure light source and improve the yield of pattern generation after exposure.
以下，配合本案之圖式說明本案之實施例。Below, the embodiment of the present case will be described with reference to the drawings of the present case.
首先，請參考圖1，圖1係繪示本發明一實施例中光罩之製造方法的流程圖。如圖1所示，本發明一實施例以微影製程進行光罩之製造，至少包含了步驟S1~步驟S3，其中，步驟S1為光阻塗佈製程；步驟S2為曝光製程；S3為顯影製程。First, please refer to FIG. 1 , which is a flow chart illustrating a method of manufacturing a photomask according to an embodiment of the present invention. As shown in Figure 1, one embodiment of the present invention uses a photolithography process to manufacture a photomask, which at least includes steps S1 to S3. Step S1 is a photoresist coating process; step S2 is an exposure process; and S3 is development. process.
請再參考圖1，本發明之實施例的微影製程乃是先提供一透明基板100，接著於步驟S1執行光阻塗佈製程，即塗佈例如是遮光型光阻的光阻110於透明基板100上。之後，於步驟S2透過遮罩120執行曝光製程，即以UV光(即紫外光)對光阻110進行曝光，而形成圖案區。再來，於步驟S3執行顯影製程以去除非圖案區後，進一步執行硬烤製程而使光阻110剩餘部份產生固化交聯反應，最後形成圖案化之遮光層110a。在此要特別說明的是，本案之說明書所載「非圖案區」係指要去除的部份，而「圖案區」則是指要留下的部份。而且，「非圖案區」以及「圖案區」會因為所選用的遮光層材料(例如，正型或負型光阻等)而改變。在本案不同的實施例中，會因為所選用的光阻形式，有的經曝光的部份會移除，有的經曝光的部份則會留下。Please refer to FIG. 1 again. The photolithography process of the embodiment of the present invention first provides a transparent substrate 100, and then performs a photoresist coating process in step S1, that is, coating a photoresist 110, such as a light-shielding photoresist, on the transparent substrate. on the substrate 100 . After that, in step S2, an exposure process is performed through the mask 120, that is, the photoresist 110 is exposed with UV light (ie, ultraviolet light) to form a pattern area. Next, after performing a development process to remove the non-pattern area in step S3, a hard baking process is further performed to cause a curing cross-linking reaction in the remaining portion of the photoresist 110, and finally a patterned light-shielding layer 110a is formed. It should be noted here that the "non-pattern area" mentioned in the instructions for this case refers to the part to be removed, while the "pattern area" refers to the part to be left. Moreover, the "non-pattern area" and "pattern area" will change due to the selected light-shielding layer material (for example, positive or negative photoresist, etc.). In different embodiments of this case, due to the selected photoresist form, some exposed parts will be removed and some exposed parts will remain.
另外，請參考圖2，圖2係繪示本發明另一實施例中光罩之製造方法的流程圖。如圖2所示，本發明另一實施例以奈米壓印製程進行光罩之製造，主要是以奈米壓印模具使樹脂成形，接著脫模後以UV光(即紫外光)固化樹脂，最後形成。詳細說明如下。In addition, please refer to FIG. 2 , which is a flow chart illustrating a method of manufacturing a photomask in another embodiment of the present invention. As shown in Figure 2, another embodiment of the present invention uses a nanoimprinting process to manufacture a photomask, which mainly uses a nanoimprinting mold to shape the resin, and then demolds and cures the resin with UV light (i.e., ultraviolet light). , finally formed. Details are as follows.
如圖2所示，一開始先提供一奈米壓印模具，而此奈米壓印模具乃是由壓印模具本體200以及壓印模具微結構200a所構成。接著，以奈米壓印模具壓印基板220上的遮光型樹脂210，意即以壓印模具微結構200a接觸並壓印遮光型樹脂210。之後，移開奈米壓印模具，並以例如是UV光(即紫外光)等光源230照射經壓印的遮光型樹脂210，而形成遮光圖案即圖案化之遮光層210a。接著，將圖案化之遮光層210a以及基板220切割成適當尺寸。在此要特別說明的是，為了進一步說明圖案化之遮光層210a，特地將圖2之圖案化之遮光層210a局部放大並於圖3說明(參考放大區域I)。As shown in FIG2 , a nano-imprint mold is provided at first, and the nano-imprint mold is composed of an imprint mold body 200 and an imprint mold microstructure 200a. Then, the light-shielding resin 210 on the substrate 220 is imprinted with the nano-imprint mold, that is, the imprint mold microstructure 200a contacts and imprints the light-shielding resin 210. Afterwards, the nano-imprint mold is removed, and a light source 230 such as UV light (i.e., ultraviolet light) is used to irradiate the imprinted light-shielding resin 210 to form a light-shielding pattern, i.e., a patterned light-shielding layer 210a. Then, the patterned light-shielding layer 210a and the substrate 220 are cut into appropriate sizes. It should be particularly noted here that, in order to further illustrate the patterned light shielding layer 210a, the patterned light shielding layer 210a of FIG. 2 is partially enlarged and illustrated in FIG. 3 (refer to the enlarged area I).
請參考圖3，圖3係繪示圖2中光罩之製造方法某一步驟的局部放大示意圖。如圖3所示，放大區域I內係示意基板220上的圖案化之遮光層210a。Please refer to FIG. 3 , which is a partially enlarged schematic diagram of a certain step of the manufacturing method of the photomask in FIG. 2 . As shown in FIG. 3 , the enlarged area I shows the patterned light-shielding layer 210 a on the substrate 220 .
以下，搭配圖4至圖5說明本發明之實施例中光柵的製作方法。Hereinafter, the manufacturing method of the grating in the embodiment of the present invention will be described with reference to FIGS. 4 to 5 .
請先參考圖4，圖4係繪示本發明一實施例中光柵之製造方法的示意圖。如圖4所示，本發明一實施例之光柵製作方法乃是將依上述方法製作的圖案化之遮光層320作為微型光罩，以雷射光源等光源330對一層或一疊層的感光聚合物(photopolymer)300進行曝光，使得感光聚合物(photopolymer)300的曝光區II與遮光區(即曝光區II外的區域)產生不同折射率，進而形成光柵。所述的微型光罩乃是由基板310以及圖案化之遮光層320所構成。在本發明一實施例中，雷射光源等光源330不限制為單一光源或多光源，且根據設計光源可形成HOE二維光柵或VHOE三維光柵。在本發明一實施例中，雷射光源等光源330係相對於感光聚合物(photopolymer)300而垂直入射。Please refer to FIG. 4 first. FIG. 4 is a schematic diagram illustrating a method of manufacturing a grating according to an embodiment of the present invention. As shown in Figure 4, a grating manufacturing method according to an embodiment of the present invention uses the patterned light-shielding layer 320 produced according to the above method as a micro mask, and uses a light source 330 such as a laser light source to photopolymerize one layer or a stack of layers. The object (photopolymer) 300 is exposed, so that the exposure area II and the light-shielding area (that is, the area outside the exposure area II) of the photopolymer (photopolymer) 300 have different refractive indexes, thereby forming a grating. The micro-mask is composed of a substrate 310 and a patterned light-shielding layer 320. In an embodiment of the present invention, the light source 330 such as a laser light source is not limited to a single light source or multiple light sources, and the light source can form a HOE two-dimensional grating or a VHOE three-dimensional grating according to the design. In an embodiment of the present invention, the light source 330 such as a laser light source is vertically incident on the photopolymer (photopolymer) 300 .
請先參考圖5，圖5係繪示本發明另一實施例中光柵之製造方法的示意圖。如圖5所示，本發明一實施例之光柵製作方法乃是將依上述方法製作的圖案化之遮光層420作為微型光罩，以雷射光源等光源430對一層或一疊層的感光聚合物(photopolymer)400進行曝光，使得感光聚合物(photopolymer)400的曝光區III與遮光區(即曝光區III外的區域)產生不同折射率，進而形成光柵。所述的微型光罩乃是由基板410以及圖案化之遮光層420所構成。在本發明一實施例中，雷射光源等光源330不限制為單一光源或多光源，且根據設計光源可形成HOE二維光柵或VHOE三維光柵。在本發明一實施例中，雷射光源等光源430係相對於感光聚合物(photopolymer)400而以一傾斜角入射。Please refer to FIG. 5 , which is a schematic diagram of a method for manufacturing a grating in another embodiment of the present invention. As shown in FIG. 5 , the method for manufacturing a grating in one embodiment of the present invention is to use the patterned light shielding layer 420 manufactured according to the above method as a micro mask, and use a light source 430 such as a laser light source to expose a layer or a stack of photopolymers 400, so that the exposure area III and the light shielding area (i.e., the area outside the exposure area III) of the photopolymer 400 produce different refractive indices, thereby forming a grating. The micro mask is composed of a substrate 410 and a patterned light shielding layer 420. In one embodiment of the present invention, the light source 330 such as a laser light source is not limited to a single light source or multiple light sources, and a HOE two-dimensional grating or a VHOE three-dimensional grating can be formed according to the design of the light source. In one embodiment of the present invention, the light source 430 such as a laser light source is incident at an oblique angle relative to the photopolymer 400 .
另外，在本發明一第一實施態樣中係提供一種曝光方法，包含：在一第一基板上形成一圖案化之遮光層，以製成一光罩，其中該第一基板為透明基板；以及利用一雷射光經由該光罩對一第二基板上之一光敏層進行一圖案化製程，以製成一光柵，其中，該圖案化之遮光層控制該光敏層接受該雷射光曝光的角度以及比例，使得該光敏層經圖案化後的一遮光區以及一曝光區具有不同的折射率。In addition, a first embodiment of the present invention provides an exposure method, which includes: forming a patterned light-shielding layer on a first substrate to form a photomask, wherein the first substrate is a transparent substrate; and using a laser light to perform a patterning process on a photosensitive layer on a second substrate through the photomask to form a grating, wherein the patterned light shielding layer controls the angle at which the photosensitive layer is exposed to the laser light and a ratio such that a light-shielding area and an exposure area after patterning of the photosensitive layer have different refractive indexes.
根據第一實施態樣之一個或多個實施方式，其中該光敏層係由一光致變折射率之材料構成。According to one or more implementations of the first embodiment, the photosensitive layer is made of a material with a photovariable refractive index.
根據第一實施態樣之一個或多個實施方式，其中該光敏層係由光聚合物(photopolymer)構成，而該光聚合物為高分子聚合物、高分子交聯化合物、高分子摻雜材料、或溶膠-凝膠材料。According to one or more embodiments of the first embodiment, the photosensitive layer is composed of a photopolymer, and the photopolymer is a high molecular polymer, a high molecular cross-linked compound, a high molecular doped material, or a sol-gel material.
根據第一實施態樣之一個或多個實施方式，其中該圖案化之遮光層係由黑色光阻或奈米壓印遮光型樹脂構成。According to one or more embodiments of the first embodiment, the patterned light-shielding layer is composed of black photoresist or nano-imprinted light-shielding resin.
根據第一實施態樣之一個或多個實施方式，其中該圖案化之遮光層係由花菁黑、苯胺黑、碳黑、氧化鉻、氧化鐵、鈦黑、氧氮化鈦、氮化鈦、或混色有機顏料構成。According to one or more embodiments of the first embodiment, the patterned light-shielding layer is composed of cyanine black, aniline black, carbon black, chromium oxide, iron oxide, titanium black, titanium oxynitride, titanium nitride, or mixed color organic pigments.
另外，在本發明一第二實施態樣中係提供一種曝光方法，包含：在一第一基板上形成一圖案化之遮光層，以製成一光罩，其中該第一基板為透明基板；以及利用一雷射光經由該光罩對一第二基板上之一光敏層進行一圖案化製程，以製成一光柵，其中，該圖案化之遮光層控制該光敏層接受該雷射光曝光的角度以及比例，使得該光敏層經圖案化後的一遮光區以及一曝光區具有不同的折射率，且該曝光區與該遮光區折射率差係介於0.0001~0.5之間。In addition, in a second embodiment of the present invention, an exposure method is provided, comprising: forming a patterned light-shielding layer on a first substrate to form a photomask, wherein the first substrate is a transparent substrate; and using a laser light to perform a patterning process on a photosensitive layer on a second substrate through the photomask to form a grating, wherein the patterned light-shielding layer controls the angle and proportion of the photosensitive layer receiving the laser light exposure, so that a light-shielding area and an exposure area of the photosensitive layer after patterning have different refractive indices, and the refractive index difference between the exposure area and the light-shielding area is between 0.0001 and 0.5.
根據第二實施態樣之一個或多個實施方式，其中該圖案化之遮光層係由黑色光阻或奈米壓印遮光型樹脂構成。According to one or more embodiments of the second embodiment, the patterned light-shielding layer is composed of black photoresist or nano-imprinted light-shielding resin.
根據第二實施態樣之一個或多個實施方式，其中該光敏層係由光聚合物(photopolymer)構成，而該光聚合物為高分子聚合物、高分子交聯化合物、高分子摻雜材料、或溶膠-凝膠材料。According to one or more embodiments of the second embodiment, the photosensitive layer is composed of a photopolymer, and the photopolymer is a polymer, a polymer cross-linked compound, or a polymer doping material. , or sol-gel materials.
另外，在本發明一第三實施態樣中係提供一種曝光方法，包含：在一第一基板上形成一圖案化之遮光層，以製成一光罩，其中該第一基板為透明基板，其中該圖案化之遮光層的解析度介於100nm~30μm之間；以及利用一雷射光經由該光罩對一第二基板上之一光敏層進行一圖案化製程，以製成一光柵，其中，該圖案化之遮光層控制該光敏層接受該雷射光曝光的角度以及比例，使得該光敏層經圖案化後的一遮光區以及一曝光區具有不同的折射率，且該曝光區與該遮光區折射率差係介於0.0001~0.5之間。In addition, in a third embodiment of the present invention, an exposure method is provided, comprising: forming a patterned shading layer on a first substrate to form a mask, wherein the first substrate is a transparent substrate, wherein the resolution of the patterned shading layer is between 100nm and 30μm; and using a laser light to perform a patterning process on a photosensitive layer on a second substrate through the mask to form a grating, wherein the patterned shading layer controls the angle and proportion of the photosensitive layer receiving the laser light exposure, so that a shading area and an exposure area of the photosensitive layer after patterning have different refractive indices, and the refractive index difference between the exposure area and the shading area is between 0.0001 and 0.5.
另外，在本發明一第四實施態樣中係提供一種曝光方法，包含：提供一光罩，該光罩由一透明基板以及其上一圖案化之遮光層構成；以及利用一同調性高之光線經由該光罩將另一基板上之一光敏層圖案化，以形成一圖案具有折射率差異的光柵；其中，該圖案化之遮光層的解析度介於100nm~30μm之間。In addition, in a fourth embodiment of the present invention, an exposure method is provided, comprising: providing a photomask, which is composed of a transparent substrate and a patterned shading layer thereon; and using highly homophonic light to pattern a photosensitive layer on another substrate through the photomask to form a grating with a pattern having a refractive index difference; wherein the resolution of the patterned shading layer is between 100nm and 30μm.
根據第四實施態樣之一個或多個實施方式，其中，當該圖案化之遮光層的材料為正型或負型光阻時，係以一微影製程製作該圖案化之遮光層；當該圖案化之遮光層的材料為遮光型樹脂時，則以一奈米壓印製程製作該圖案化之遮光層。According to one or more implementations of the fourth embodiment, when the material of the patterned light-shielding layer is a positive or negative photoresist, the patterned light-shielding layer is produced by a photolithography process; when When the material of the patterned light-shielding layer is light-shielding resin, the patterned light-shielding layer is produced by a nanoimprinting process.
根據第四實施態樣之一個或多個實施方式，其中該雷射光源係一或多個來源，而該光柵係為一維、二維或三維光柵。According to one or more implementations of the fourth embodiment, the laser light source is one or more sources, and the grating is a one-dimensional, two-dimensional or three-dimensional grating.
以上實施方式僅用以說明本發明的技術方案而非限制，儘管參照較佳實施方式對本發明進行了詳細說明，本領域的普通技術人員應當理解，可以對本發明的技術方案進行修改或等同替換，而不脫離本發明技術方案的精神和範圍。The above embodiments are only used to illustrate the technical solution of the present invention rather than to limit it. Although the present invention is described in detail with reference to the preferred embodiments, ordinary technicians in this field should understand that the technical solution of the present invention can be modified or replaced by equivalents without departing from the spirit and scope of the technical solution of the present invention.
100:透明基板 110:光阻 120:遮罩 110a、210a:圖案化之遮光層 200:壓印模具本體 200a:壓印模具微結構 210:遮光型樹脂 220:基板 230:光源 300、400:感光聚合物 310、410:基板 320、420:圖案化之遮光層 330、430:光源 I:放大區域 II、III:曝光區 S1~S3:步驟 UV:紫外光100: Transparent substrate 110: Photoresist 120: Mask 110a, 210a: Patterned light-shielding layer 200: Imprinting mold body 200a: Imprinting mold microstructure 210: Light-shielding resin 220: Substrate 230: Light source 300, 400: Photosensitive polymer 310, 410: Substrate 320, 420: Patterned light-shielding layer 330, 430: Light source I: Enlarged area II, III: Exposure area S1~S3: Steps UV: Ultraviolet light
為讓本發明的上述與其他目的、特徵、優點與實施例能更淺顯易懂，所附圖式之說明如下： 圖1係繪示本發明一實施例中光罩之製造方法的流程圖。 圖2係繪示本發明另一實施例中光罩之製造方法的流程圖。 圖3係繪示圖2中光罩之製造方法某一步驟的局部放大示意圖。 圖4係繪示本發明一實施例中光柵之製造方法的示意圖。 圖5係繪示本發明另一實施例中光柵之製造方法的示意圖。 In order to make the above and other objects, features, advantages and embodiments of the present invention easier to understand, the accompanying drawings are described as follows: FIG. 1 is a flow chart illustrating a method of manufacturing a photomask according to an embodiment of the present invention. FIG. 2 is a flow chart illustrating a method of manufacturing a photomask in another embodiment of the present invention. FIG. 3 is a partially enlarged schematic diagram showing a certain step of the manufacturing method of the photomask in FIG. 2 . FIG. 4 is a schematic diagram illustrating a method of manufacturing a grating according to an embodiment of the present invention. FIG. 5 is a schematic diagram illustrating a method of manufacturing a grating in another embodiment of the present invention.
根據慣常的作業方式，圖中各種特徵與元件並未依實際比例繪製，其繪製方式是為了以最佳的方式呈現與本發明相關的具體特徵與元件。此外，在不同圖式間，以相同或相似的元件符號指稱相似的元件及部件。According to conventional operation methods, various features and components in the figure are not drawn according to the actual scale, and the drawing method is to present the specific features and components related to the present invention in the best way. In addition, between different figures, the same or similar element symbols are used to refer to similar elements and components.
400:感光聚合物 400:Photopolymer
410:基板 410: Substrate
420:圖案化之遮光層 420: Patterned light shielding layer
430:光源 430: Light source
III:曝光區 III: Exposure area
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| US20220082936A1 (en) * | 2020-09-17 | 2022-03-17 | Facebook Technologies, Llc | Gray-tone lithography for precise control of grating etch depth |
| TW202217469A (en) * | 2020-08-25 | 2022-05-01 | 南韓商Ｌｇ化學股份有限公司 | Cloning method of large holographic optical element and large holographic optical element replicated by the method |
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| TW202217469A (en) * | 2020-08-25 | 2022-05-01 | 南韓商Ｌｇ化學股份有限公司 | Cloning method of large holographic optical element and large holographic optical element replicated by the method |
| US20220082936A1 (en) * | 2020-09-17 | 2022-03-17 | Facebook Technologies, Llc | Gray-tone lithography for precise control of grating etch depth |
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