TWI836902B - Silicon wafer detection tools and silicon wafer detection methods - Google Patents

Silicon wafer detection tools and silicon wafer detection methods Download PDF

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TWI836902B
TWI836902B TW112105367A TW112105367A TWI836902B TW I836902 B TWI836902 B TW I836902B TW 112105367 A TW112105367 A TW 112105367A TW 112105367 A TW112105367 A TW 112105367A TW I836902 B TWI836902 B TW I836902B
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silicon wafer
tray
injection head
tested
chamber
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TW202326096A (en
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何剛
趙莉珍
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大陸商西安奕斯偉材料科技股份有限公司
大陸商西安奕斯偉矽片技術有限公司
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Abstract

本發明提供了一種矽片檢測工具及矽片檢測方法,該矽片檢測工具包括: 用於放置待檢測矽片的拖盤;用於與拖盤配合形成腔室的防護罩,防護罩扣合至拖盤上且防護罩上開設有注入孔和排氣孔;用於向腔室內注射及抽取反應溶液的注射器,注射器包括注射筒、可移動設置於注射筒內的活塞、及可拆卸連接至注射筒端部的注射頭,注射筒位於腔室外,注射頭經由注入孔插入至腔室內,注射頭包括一平行於拖盤的承托面且朝向拖盤的承托面設置的底面,底面上分佈有多個開孔。The invention provides a silicon wafer detection tool and a silicon wafer detection method. The silicon wafer detection tool includes: a tray used to place the silicon wafer to be detected; a protective cover used to cooperate with the tray to form a chamber, and the protective cover is fastened The tray is provided with an injection hole and an exhaust hole on the protective cover; a syringe used for injecting and extracting the reaction solution into the chamber. The syringe includes a syringe barrel, a piston movably arranged in the syringe barrel, and a piston removably connected to the The injection head is at the end of the syringe barrel. The syringe barrel is located outside the chamber. The injection head is inserted into the chamber through the injection hole. The injection head includes a bottom surface parallel to the supporting surface of the tray and facing the supporting surface of the tray. The bottom surface There are multiple openings distributed.

Description

矽片檢測工具及矽片檢測方法Silicon wafer detection tools and silicon wafer detection methods

本發明關於半導體製造技術領域,尤其屬於一種矽片檢測工具及矽片檢測方法。The present invention relates to the field of semiconductor manufacturing technology, and more particularly to a silicon wafer testing tool and a silicon wafer testing method.

在大型積體電路製造技術中,隨著裝置尺寸不斷縮小,半導體線寬越來越窄,矽片的潔淨程度對裝置良率的影響越來越大,尤其是矽片的金屬雜質。In large-scale integrated circuit manufacturing technology, as device size continues to shrink and semiconductor line widths become narrower, the cleanliness of silicon wafers has an increasingly greater impact on device yield, especially metal impurities in silicon wafers.

超痕量級的金屬汙染已經可以導致裝置不同程度的失效,降低了生產線的良率。Cu、Ni等重金屬的汙染可使少子壽命縮短及使漏電流增大,且這兩種金屬元素的擴散率較高,很容易向矽片體內擴散,僅僅對矽片的待測表面Cu、Ni元素進行管控是遠遠不夠的,對矽片體內Cu、Ni元素的檢測就顯得至關重要。Ultra-trace metal contamination can cause different degrees of device failure and reduce the yield of the production line. Heavy metal contamination such as Cu and Ni can shorten the minority carrier life and increase the leakage current. The diffusion rate of these two metal elements is high and they can easily diffuse into the silicon wafer. It is far from enough to just control the Cu and Ni elements on the surface of the silicon wafer to be tested. The detection of Cu and Ni elements in the silicon wafer is crucial.

多晶矽超痕量分析(Polyultra trace profiling)是一種常見的矽片體內Cu、 Ni元素含量的測試方法,其測試原理為:利用Cu、Ni元素在矽的單晶和多晶形態內的擴散係數不同,通過熱處理在矽片的待測表面形成多晶矽膜,矽片體內的Cu、Ni等元素向多晶矽層擴散而聚集在多晶矽層,再對矽片多晶矽層進行刻蝕處理,對刻蝕液進行收集進行金屬元素檢測。Polyultra trace profiling is a common method for testing the content of Cu and Ni in silicon wafers. The testing principle is as follows: using the different diffusion coefficients of Cu and Ni in single crystal and polycrystalline silicon, a polycrystalline silicon film is formed on the surface of the silicon wafer to be tested through heat treatment. The Cu, Ni and other elements in the silicon wafer diffuse into the polycrystalline silicon layer and gather in the polycrystalline silicon layer. The polycrystalline silicon layer of the silicon wafer is then etched, and the etching solution is collected for metal element detection.

在相關技術中,對矽片多晶矽層的處理多用手動測試,即,在矽片的待測表面滴加一定比例的氫氟酸和硝酸,晃動或旋轉矽片,使刻蝕液均勻塗佈在矽片的待測表面後再收集刻蝕後的溶液到容器中進行測試。在矽片的待測表面處理過程中也會採用一些簡易裝置用於固定或加持矽片,以及輔助刻蝕液在矽片的待測表面塗佈。近年來也出現用矽片的待測表面處理系統(Wafe Surface Preparation Systemand,WSPS)設備測試,通過設備對矽片進行處理並掃描表面進行測試。但是,相關技術中無論是對矽片多晶矽層進行手動測試或者採用相關技術中的裝置測試存在以下缺點: 1)、矽片大面積暴露在外部,在處理過程中極容易引入汙染,且矽片在處理過程中產生有害氣體會直接進入空氣中,危害操作人員健康; 2)、難以將刻蝕液在矽片的待測表面均勻分佈,浪費大量刻蝕液,對人員操作要求高; 3)、設備測試適用的矽片類型較為局限,當矽片的待測表面粗糙或矽片摻雜量較高時就會出現溶液回收不全或收集失敗的情況。 In related technologies, the polycrystalline silicon layer of silicon wafers is mostly treated by manual testing, that is, a certain proportion of hydrofluoric acid and nitric acid is dripped on the surface to be tested of the silicon wafer, and the silicon wafer is shaken or rotated to evenly coat the etching liquid on the surface to be tested of the silicon wafer, and then the etched solution is collected into a container for testing. In the process of treating the surface to be tested of the silicon wafer, some simple devices are also used to fix or support the silicon wafer, and to assist in coating the etching liquid on the surface to be tested of the silicon wafer. In recent years, there has also been testing using a wafer surface preparation system (WSPS) equipment, which treats the silicon wafer and scans the surface for testing. However, the related technologies have the following disadvantages whether they are manual testing of the polycrystalline silicon layer of silicon wafers or device testing in related technologies: 1) A large area of silicon wafers is exposed to the outside, which is very easy to introduce pollution during the processing process, and the harmful gases generated by the silicon wafers during the processing process will directly enter the air, endangering the health of operators; 2) It is difficult to evenly distribute the etching liquid on the surface to be tested of the silicon wafer, which wastes a lot of etching liquid and requires high operation of personnel; 3) The types of silicon wafers applicable to equipment testing are relatively limited. When the surface to be tested of the silicon wafer is rough or the silicon wafer has a high doping content, the solution recovery will be incomplete or the collection will fail.

本發明實施例提供了一種矽片檢測工具及矽片檢測方法,能夠減少矽片在處理過程中引入汙染,且減少對操作人員危害,易於安裝及操作,減少材料浪費。Embodiments of the present invention provide a silicon wafer detection tool and a silicon wafer detection method, which can reduce the pollution introduced by the silicon wafer during processing, reduce harm to operators, are easy to install and operate, and reduce material waste.

本發明實施例所提供的技術方案如下: 第一方面,本發明實施例提供了一種矽片檢測工具,包括: 用於放置待檢測矽片的拖盤; 用於與該拖盤配合形成腔室的防護罩,該防護罩扣合至該拖盤上且該防護罩上開設有注入孔和排氣孔; 用於向該腔室內注射及抽取反應溶液的注射器,該注射器包括注射筒、可移動設置於該注射筒內的活塞、及可拆卸連接至該注射筒端部的注射頭,該注射筒位於該腔室外,該注射頭經由該注入孔插入至該腔室內,該注射頭包括一平行於該拖盤的承托面且朝向該拖盤的承托面設置的底面,該底面上分佈有多個開孔。 The technical solution provided by the embodiment of the present invention is as follows: In the first aspect, the embodiment of the present invention provides a silicon wafer detection tool, including: A tray for placing silicon wafers to be detected; A protective cover for forming a chamber with the tray, the protective cover is buckled onto the tray and has an injection hole and an exhaust hole; A syringe for injecting and extracting a reaction solution into the chamber, the syringe includes a syringe, a piston movably arranged in the syringe, and an injection head detachably connected to the end of the syringe, the syringe is located outside the chamber, the injection head is inserted into the chamber through the injection hole, the injection head includes a bottom surface parallel to the supporting surface of the tray and facing the supporting surface of the tray, and a plurality of openings are distributed on the bottom surface.

示例性的,該注射頭包括: 第一部分,該第一部分內部中空且穿設於該注入孔內;及 第二部分,該第二部分內部中空且與該第一部分彼此內腔相通,該第二部分包括該底面。 For example, the injection head includes: The first part is hollow inside and penetrates the injection hole; and The second part is hollow inside and communicates with the first part. The second part includes the bottom surface.

示例性的,該第一部分包括垂直該拖盤的承托面設置的豎管; 該第二部分包括平行該拖盤的承托面設置的至少一根橫管,該橫管在平行於該拖盤的承托面方向上的相對兩端封閉,且多個該開孔沿該橫管的軸線方向均勻排列。 Exemplarily, the first part includes a vertical tube arranged perpendicular to the supporting surface of the tray; The second part includes at least one horizontal tube arranged parallel to the supporting surface of the tray, the horizontal tube is closed at two opposite ends in a direction parallel to the supporting surface of the tray, and the plurality of openings are evenly arranged along the axial direction of the horizontal tube.

示例性的,該第一部分繞垂直該拖盤的承托面方向的軸線可旋轉,以帶動該第二部分旋轉,以使該注射筒內的溶液經由該開孔均勻覆蓋至該待檢測矽片的待測表面。Exemplarily, the first part can rotate around an axis perpendicular to the direction of the supporting surface of the tray to drive the second part to rotate, so that the solution in the syringe can evenly cover the silicon chip to be detected through the opening. the surface to be tested.

示例性的,該拖盤的承托面上設有用於容納該待檢測矽片的容納槽,該容納槽的深度大於該待檢測矽片的厚度,且該容納槽的底部開設有通孔,該通孔的外徑尺寸小於該待檢測矽片的外徑尺寸。Exemplarily, the supporting surface of the tray is provided with an accommodating groove for accommodating the silicon wafer to be detected, the depth of the accommodating groove is greater than the thickness of the silicon wafer to be detected, and a through hole is provided at the bottom of the accommodating groove. The outer diameter of the through hole is smaller than the outer diameter of the silicon chip to be detected.

示例性的,該待檢測矽片檢測工具還包括: 驅動元件,該驅動元件與該注射器連接,用於驅動該注射器繞該軸線旋轉,以使該第一部分繞該軸線可旋轉。 Exemplarily, the silicon wafer inspection tool to be inspected further includes: A driving element, which is connected to the syringe and is used to drive the syringe to rotate around the axis so that the first part can rotate around the axis.

示例性的,該注射頭與該注射筒之間設有控制閥。Exemplarily, a control valve is provided between the injection head and the syringe barrel.

示例性的,該注射頭在該注入孔內沿垂直於該拖盤的承托面方向可移動。Exemplarily, the injection head is movable in the injection hole in a direction perpendicular to the supporting surface of the tray.

示例性的,該注射筒上設有刻度。For example, the syringe barrel is provided with a scale.

第二方面,本發明實施例提供了一種矽片檢測方法,採用如上所述的矽片檢測工具對矽片進行檢測;該矽片檢測方法包括如下步驟: 將待檢測矽片放置於由該拖盤與該防護罩配合形成的腔室內; 在該注射器的注射筒內加入反應溶液; 通過該注射頭向該腔室內注射反應溶液,以使該反應溶液分佈在該待檢測矽片的待測表面,對矽片的待測表面進行處理; 通過該注射頭抽取該腔室內反應溶液,以收集刻蝕後的反應溶液; 對收集的反應溶液進行測試。 In the second aspect, the embodiment of the present invention provides a silicon wafer inspection method, which uses the silicon wafer inspection tool as described above to inspect the silicon wafer; the silicon wafer inspection method includes the following steps: Placing the silicon wafer to be inspected in a chamber formed by the tray and the protective cover; Adding a reaction solution into the syringe of the syringe; Injecting the reaction solution into the chamber through the injection head so that the reaction solution is distributed on the surface to be inspected of the silicon wafer to be inspected, and the surface to be inspected of the silicon wafer is treated; Extracting the reaction solution in the chamber through the injection head to collect the etching reaction solution; Testing the collected reaction solution.

示例性的,該矽片檢測方法中, 該通過該注射頭向該腔室內注射反應溶液,具體包括: 繞垂直該拖盤的承托面方向的軸線旋轉該第一部分,以帶動該第二部分旋轉,以使該注射筒內的溶液經由該開孔均勻覆蓋至該待檢測矽片的待測表面; 該通過該注射頭抽取該腔室內反應溶液,具體包括: 繞垂直該拖盤的承托面方向的軸線旋轉該第一部分,以帶動該第二部分旋轉,以使該注射筒內的溶液從該待檢測矽片的待測表面經由該開孔收集至注射筒。 Exemplarily, in the silicon wafer detection method, The injection of the reaction solution into the chamber through the injection head specifically includes: Rotating the first part around an axis perpendicular to the supporting surface of the tray to drive the second part to rotate, so that the solution in the injection barrel is uniformly covered to the surface to be tested of the silicon wafer to be detected through the opening; Extracting the reaction solution in the chamber through the injection head specifically includes: Rotating the first part around an axis perpendicular to the supporting surface of the tray to drive the second part to rotate, so that the solution in the injection barrel is collected from the surface to be tested of the silicon wafer to be detected through the opening to the injection barrel.

示例性的,該通過該注射頭向該腔室內注射反應溶液之前,該矽片檢測方法還包括: 沿垂直該拖盤的承托面方向向靠近該拖盤方向移動該注射頭,以使該注射頭與該待檢測矽片的待測表面保持預定距離; 該通過該注射頭向該腔室內注射反應溶液之後,該通過該注射頭抽取該腔室內反應溶液之前,該矽片檢測方法還包括: 沿垂直該拖盤的承托面方向向靠近該拖盤方向移動該注射頭,以使該注射頭與該待檢測矽片的待測表面的反應溶液液面接觸。 Exemplarily, before injecting the reaction solution into the chamber through the injection head, the silicon chip detection method further includes: Move the injection head in a direction perpendicular to the supporting surface of the tray in a direction close to the tray, so that the injection head maintains a predetermined distance from the surface of the silicon wafer to be tested; After injecting the reaction solution into the chamber through the injection head and before extracting the reaction solution from the chamber through the injection head, the silicon chip detection method further includes: The injection head is moved in a direction perpendicular to the supporting surface of the tray toward a direction close to the tray, so that the injection head is in contact with the reaction solution liquid level on the surface of the silicon chip to be detected.

本發明實施例所帶來的有益效果如下: 上述方案中,該待檢測矽片檢測工具可包括拖盤、防護罩和注射器,其中拖盤和防護罩可扣合形成一腔室,待檢測矽片可放置於拖盤上,經由該注射器來向腔室內注射反應溶液,這樣,對矽片處理過程可在腔室內完成,相較於相關技術中在開放環境中對矽片進行處理的方式來說,能夠減少矽片在處理過程中引入外界汙染;並且,該防護罩和該拖盤配合形成腔室,且防護罩上設排氣孔,可通過排氣孔將對矽片處理過程中產生的有害氣體定向排出,以減少對操作人員危害;並且,由於設置注射器來向腔室內注射及抽取反應溶液,易於向矽片的待測表面塗佈反應溶液且易於收集處理後的反應溶液,安裝及操作簡單,對操作人員要求低,減少材料浪費;此外,該矽片檢測工具可適用於不同類型矽片,即使當矽片的待測表面粗糙或矽片摻雜量較高時,由於採用注射器抽取反應溶液,可減少出現溶液回收不全或收集失敗的問題。 The beneficial effects brought by the embodiments of the present invention are as follows: In the above solution, the silicon wafer to be detected detection tool can include a tray, a protective cover and a syringe, wherein the tray and the protective cover can be buckled together to form a chamber, and the silicon wafer to be detected can be placed on the tray, and the syringe is used to inject the silicon wafer to be detected. The reaction solution is injected into the chamber, so that the processing of the silicon wafer can be completed in the chamber. Compared with the method of processing the silicon wafer in an open environment in related technologies, it can reduce the introduction of external contamination into the silicon wafer during the processing process. ; Moreover, the protective cover and the tray cooperate to form a chamber, and the protective cover is provided with an exhaust hole through which harmful gases generated during the processing of silicon wafers can be discharged in a directed manner to reduce harm to operators; Moreover, since a syringe is provided to inject and extract the reaction solution into the chamber, it is easy to apply the reaction solution to the surface of the silicon wafer to be measured and to collect the processed reaction solution. It is simple to install and operate, has low requirements on operators, and reduces material waste; In addition, this silicon wafer detection tool can be applied to different types of silicon wafers. Even when the surface of the silicon wafer to be tested is rough or the silicon wafer has a high doping content, the use of a syringe to extract the reaction solution can reduce the occurrence of incomplete solution recovery or collection failure. problem.

為了使本發明的目的、技術方案及優點更加清楚明白,下面結合附圖及實施例,對本發明進行進一步詳細說明。應當理解,此處所描述的具體實施例僅用以解釋本發明,但並不用於限定本發明。In order to make the purpose, technical solution and advantages of the present invention more clearly understood, the present invention is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, but not to limit the present invention.

為使本發明實施例的目的、技術方案和優點更加清楚,下面將結合本發明實施例中的附圖,對本發明實施例中的技術方案進行清楚、完整地描述,顯然,所描述的實施例僅僅是本發明一部分實施例,而不是全部的實施例。基於本發明中的實施例,本領域之具有通常知識者在沒有作出進步性改良前提下所獲得的所有其他實施例,都屬於本發明保護的範圍。In order to make the purpose, technical solution and advantages of the embodiments of the present invention clearer, the technical solution in the embodiments of the present invention will be described clearly and completely in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those with ordinary knowledge in the field without making progressive improvements are within the scope of protection of the present invention.

另外需要說明的是:本發明實施例中術語“第一”、“第二”等是用於區別類似的物件,而不用於描述特定的順序或先後次序。應該理解這樣使用的術語在適當情況下可以互換,以便本發明的實施例能夠以除了在這裡圖示或描述的那些以外的順序實施,且“第一”、“第二”所區別的對象通常為一類,並不限定物件的個數,例如第一物件可以是一個,也可以是多個。In addition, it should be noted that in the embodiments of the present invention, the terms "first", "second", etc. are used to distinguish similar objects and are not used to describe a specific order or sequence. It is to be understood that the terms so used are interchangeable under appropriate circumstances so that embodiments of the invention can be practiced in sequences other than those illustrated or described herein, and "first" and "second" distinctions are generally intended to It is a category, and the number of objects is not limited. For example, the first object can be one or multiple.

本技術領域之具有通常知識者可以理解,除非特意聲明,這裡使用的單數形式“一”、“一個”、“所述”和“該”也可包括複數形式。應該進一步理解的是,本發明的說明書中使用的措辭“包括”是指存在所述特徵、整數、步驟、操作、元件和/或元件,但是並不排除存在或添加一個或多個其他特徵、整數、步驟、操作、元件、元件和/或它們的組。應該理解,當我們稱元件被“連接”或“耦接”到另一元件時,它可以直接連接或耦接到其他元件,或者也可以存在中間元件。此外,這裡使用的“連接”或“耦接”可以包括無線連接或無線耦接。這裡使用的措辭“和/或”包括一個或更多個相關聯的列出項的全部或任一單元和全部組合。Those with ordinary knowledge in the art will understand that, unless otherwise stated, the singular forms "one", "an", "said" and "the" used herein may also include plural forms. It should be further understood that the term "including" used in the specification of the present invention refers to the presence of the features, integers, steps, operations, elements and/or components, but does not exclude the presence or addition of one or more other features, integers, steps, operations, elements, components and/or groups thereof. It should be understood that when we say that an element is "connected" or "coupled" to another element, it can be directly connected or coupled to the other element, or there may be intermediate elements. In addition, the "connection" or "coupling" used here may include wireless connection or wireless coupling. The term "and/or" used here includes all or any unit and all combinations of one or more associated listed items.

本發明實施例中術語“和/或”,描述關聯物件的關聯關係,表示可以存在三種關係,例如,A和/或B,可以表示:單獨存在A,同時存在A和B,單獨存在B這三種情況。字元“/”一般表示前後關聯物件是一種“或”的關係。In the embodiments of the present invention, the term "and/or" describes the relationship between related objects, indicating that three relationships may exist. For example, A and/or B can represent: A exists alone, A and B exist at the same time, and B exists alone. The character "/" generally indicates that the related objects before and after are in an "or" relationship.

本發明實施例中術語“多個”是指兩個或兩個以上,其它量詞與之類似。In the embodiment of the present invention, the term "multiple" refers to two or more than two, and other quantifiers are similar to it.

本發明中的“基於A確定B”表示確定B時要考慮A這個因素。並不限於“只基於A就可以確定出B”,還應包括:“基於A和C確定B”、“基於A、C和E確定B”、基於“A確定C,基於C進一步確定B”等。另外還可以包括將A作為確定B的條件,例如,“當A滿足第一條件時,使用第一方法確定B”;再例如,“當A滿足第二條件時,確定B”等;再例如,“當A滿足第三條件時,基於第一參數確定B”等。當然也可以是將A作為確定B的因素的條件,例如,“當A滿足第一條件時,使用第一方法確定C,並進一步基於C確定B”等。"Determining B based on A" in the present invention means that the factor A should be considered when determining B. It is not limited to "B can be determined based on A alone", but also includes: "B is determined based on A and C", "B is determined based on A, C and E", "C is determined based on A, and B is further determined based on C" wait. In addition, it can also include taking A as a condition for determining B, for example, "When A meets the first condition, use the first method to determine B"; another example, "When A meets the second condition, determine B", etc.; another example , "When A meets the third condition, determine B based on the first parameter" and so on. Of course, it can also be a condition that uses A as a factor to determine B, for example, "when A meets the first condition, use the first method to determine C, and further determine B based on C" and so on.

如圖1所示,本發明實施例所提供的矽片檢測工具包括:拖盤100、防護罩200和注射器300。As shown in FIG. 1 , the silicon wafer testing tool provided by the embodiment of the present invention includes: a tray 100 , a protective cover 200 and a syringe 300 .

該拖盤100 用於放置待檢測矽片10,該防護罩200用於與該拖盤100配合形成腔室A,該防護罩200扣合至該拖盤100上且該防護罩200上開設有注入孔210和排氣孔(圖中未示意)。The tray 100 is used to place the silicon wafer 10 to be detected. The protective cover 200 is used to cooperate with the tray 100 to form a chamber A. The protective cover 200 is fastened to the tray 100 and has an opening on the protective cover 200. Injection hole 210 and exhaust hole (not shown in the figure).

該注射器300用於向該腔室A內注射及抽取反應溶液,該注射器300包括注射筒310、可移動設置於該注射筒310內的活塞320、及可拆卸連接至該注射筒310端部的注射頭330,該注射筒310位於該腔室A外,該注射頭330經由該注入孔210插入至該腔室A內,該注射頭330包括一平行於該拖盤100的承托面且朝向該拖盤100的承托面設置的底面332a,該底面332a上分佈有多個開孔332b。The syringe 300 is used to inject and extract the reaction solution into the chamber A. The syringe 300 includes a syringe barrel 310, a piston 320 movably disposed in the syringe barrel 310, and a removably connected to the end of the syringe barrel 310. Injection head 330. The syringe barrel 310 is located outside the chamber A. The injection head 330 is inserted into the chamber A through the injection hole 210. The injection head 330 includes a supporting surface parallel to the tray 100 and facing towards The supporting surface of the tray 100 is provided with a bottom surface 332a, and a plurality of openings 332b are distributed on the bottom surface 332a.

上述方案中,該拖盤100和該防護罩200可扣合形成一腔室A,待檢測矽片10可放置於該拖盤100上,經由該注射器300來向腔室A內注入反應溶液以及從腔室A內抽取反應溶液。在一個具體實施過程中,檢測過程具體可為:利用多晶矽超痕量檢測技術實現矽片內金屬的檢測,該反應溶液可為一定比例配比的氫氟酸和硝酸的混合液,顯然,在實際應用中,該反應溶液可根據實際檢測需求進行適應性調整。In the above scheme, the tray 100 and the protective cover 200 can be buckled to form a chamber A, and the silicon wafer 10 to be tested can be placed on the tray 100, and the reaction solution is injected into the chamber A and extracted from the chamber A through the injector 300. In a specific implementation process, the detection process can be specifically: using polycrystalline silicon ultra-trace detection technology to realize the detection of metal in the silicon wafer, the reaction solution can be a mixture of hydrofluoric acid and nitric acid in a certain ratio. Obviously, in actual application, the reaction solution can be adaptively adjusted according to actual detection requirements.

由於在檢測過程中,對矽片處理過程可在腔室A內完成,相較於相關技術中在開放環境中對矽片進行處理的方式來說,能夠減少矽片在處理過程中引入外界汙染;並且,該防護罩200和該拖盤100配合形成腔室A,且防護罩200上設排氣孔,可通過排氣孔將對矽片處理過程中產生的有害氣體定向排出,以減少對操作人員危害;並且,由於設置注射器300來向腔室A內注射及抽取反應溶液,易於向矽片的待測表面塗佈反應溶液且易於收集處理後的反應溶液,安裝及操作簡單,對操作人員要求低,減少材料浪費;此外,該矽片檢測工具可適用於不同類型矽片,即使當矽片的待測表面粗糙或矽片摻雜量較高時,由於採用注射器300抽取反應溶液,可減少出現溶液回收不全或收集失敗的問題。Since the wafer processing can be completed in the chamber A during the testing process, compared with the method of processing the wafer in an open environment in the related art, the introduction of external pollution into the wafer during the processing can be reduced; and the protective cover 200 and the tray 100 cooperate to form the chamber A, and the protective cover 200 is provided with an exhaust hole, through which the harmful gas generated during the wafer processing can be directed to be discharged, so as to reduce the harm to the operator; and, due to the setting of the injection The injector 300 is used to inject and extract the reaction solution into the chamber A, so that the reaction solution can be easily applied to the surface to be tested of the silicon wafer and the reaction solution after treatment can be easily collected. The installation and operation are simple, the requirements for operators are low, and material waste is reduced. In addition, the silicon wafer inspection tool can be applied to different types of silicon wafers. Even when the surface to be tested of the silicon wafer is rough or the silicon wafer has a high amount of impurities, the syringe 300 is used to extract the reaction solution, which can reduce the problem of incomplete solution recovery or collection failure.

在一些示例性的實施例中,如圖1至圖3所示,該注射頭330包括:第一部分331和第二部分332,其中,該第一部分331和該第二部分332均內部中空,該第一部分331穿設於該注入孔210內,該第二部分332位於該腔室A內且與該第一部分331彼此內腔相通,該第二部分332包括該底面332a,該底面332a上分佈有多個開孔332b。In some exemplary embodiments, as shown in FIGS. 1 to 3 , the injection head 330 includes: a first part 331 and a second part 332 , wherein both the first part 331 and the second part 332 are hollow inside, the The first part 331 is passed through the injection hole 210. The second part 332 is located in the chamber A and communicates with the first part 331. The second part 332 includes the bottom surface 332a, and the bottom surface 332a is distributed with Multiple openings 332b.

採用上述方案,該第一部分331起到將該注射筒310內反應溶液引入腔室A內的第二部分332內腔中的作用,該第二部分332由於具有一與拖盤100的承托面平行的底面332a,也就是說,其底面332a與矽片的待測表面平行,這樣,通過其底面332a上分佈多個開孔332b可向矽片的待測表面塗佈反應溶液,以提高塗佈均勻性。Using the above solution, the first part 331 plays the role of introducing the reaction solution in the syringe 310 into the inner cavity of the second part 332 in the chamber A. The second part 332 has a supporting surface with the tray 100 The parallel bottom surface 332a, that is, its bottom surface 332a is parallel to the surface of the silicon wafer to be measured. In this way, the reaction solution can be applied to the surface of the silicon wafer to be measured through a plurality of openings 332b distributed on the bottom surface 332a to improve the coating. Cloth uniformity.

在一種具體實施例中,如圖1至圖3所示,該第一部分331包括垂直該拖盤100的承托面設置的豎管3311;該第二部分332包括平行該拖盤100的承托面設置的至少一根橫管3321,該橫管3321在平行於該拖盤100的承托面方向上的相對兩端封閉,且多個該開孔332b沿該橫管3321的軸線方向均勻排列,且該橫管3321在其軸線方向上的尺寸大於或等於該待檢測矽片10的外徑尺寸。In a specific embodiment, as shown in FIGS. 1 to 3 , the first part 331 includes a vertical pipe 3311 arranged perpendicularly to the supporting surface of the tray 100 ; the second part 332 includes a support parallel to the tray 100 At least one transverse tube 3321 is provided on the surface, the opposite ends of the transverse tube 3321 in the direction parallel to the supporting surface of the tray 100 are closed, and a plurality of the openings 332b are evenly arranged along the axis direction of the transverse tube 3321 , and the size of the transverse tube 3321 in its axial direction is greater than or equal to the outer diameter of the silicon chip 10 to be detected.

採用上述方案,該注射頭330採用交叉設置的橫管3321和豎管3311來實現,沿著橫管3321的軸線均勻排列多個開孔332b,且當該待檢測矽片10放置於該拖盤100上時,該橫管3321與該待檢測矽片10在該拖盤100的承托面上的正投影重合,且該橫管3321在其軸線方向上的尺寸大於或等於該待檢測矽片10的外徑尺寸,也就是說,在該橫管3321的軸線方向上,該待檢測矽片10在該拖盤100的承托面上的正投影應不超出該橫管3321在其軸線方向上的相對兩端之外,這樣,可提高向待檢測矽片10的待測表面塗佈反應溶液的均勻性。Adopting the above solution, the injection head 330 is implemented by cross-arranged horizontal tubes 3321 and vertical tubes 3311. A plurality of openings 332b are evenly arranged along the axis of the horizontal tube 3321, and when the silicon chip 10 to be detected is placed on the tray 100, the cross tube 3321 coincides with the orthographic projection of the silicon chip 10 to be detected on the supporting surface of the tray 100, and the size of the cross tube 3321 in the axial direction is greater than or equal to the silicon chip to be detected The outer diameter size of 10, that is to say, in the axial direction of the cross tube 3321, the orthographic projection of the silicon chip 10 to be detected on the supporting surface of the tray 100 should not exceed the axial direction of the cross tube 3321. In this way, the uniformity of coating the reaction solution on the surface of the silicon chip 10 to be tested can be improved.

需要說明的是,在上述方案中,該橫管3321的數量不限,可以是一根,也可以是多根。當該橫管3321數量為多根時,多根該橫管3321可以是相互交叉,也可以是彼此軸線平行設置。It should be noted that, in the above scheme, the number of the transverse tubes 3321 is not limited, and can be one or more. When the number of the transverse tubes 3321 is more than one, the transverse tubes 3321 can be mutually crossed or arranged with their axes parallel to each other.

還需要說明的是,在上述實施例中,該第二部分332選用橫管3321,結構簡單,易於實現。在其他未示意出的實施例中,該第二部分332並不僅限於橫管3321形式,還可以採用內部中空的板體等任意合適的結構,例如,該第二部分332還可以為一圓盤狀板體,該待檢測矽片10在該拖盤100的承托面上的正投影可落入該圓盤狀板體在該拖盤100的承托面上的正投影之內,該圓盤狀板體在朝向待檢測矽片10的底面332a上均勻分佈多個開孔332b。It should also be noted that in the above embodiment, the second part 332 uses a horizontal tube 3321, which has a simple structure and is easy to implement. In other unillustrated embodiments, the second part 332 is not limited to the form of a transverse tube 3321, and may also adopt any suitable structure such as a hollow internal plate. For example, the second part 332 may also be a disk. The orthographic projection of the silicon chip 10 to be detected on the supporting surface of the tray 100 can fall within the orthographic projection of the disc-shaped plate on the supporting surface of the tray 100. The circular The disc-shaped plate has a plurality of openings 332b evenly distributed on the bottom surface 332a facing the silicon chip 10 to be detected.

此外,為了進一步提高反應溶液在待檢測矽片10的待測表面的塗佈均勻性,在一具體實施例中,如圖3所示,該第一部分331繞垂直該拖盤100的承托面方向的軸線可旋轉,以帶動該第二部分332旋轉,以使該注射筒310內的溶液經由該開孔332b均勻覆蓋至該待檢測矽片10的待測表面。這樣,由於該第二部分332可沿待檢測矽片10周向旋轉,在旋轉過程中可將反應溶液更加均勻地塗佈在待檢測矽片10的待測表面。In addition, in order to further improve the coating uniformity of the reaction solution on the surface of the silicon chip 10 to be tested, in a specific embodiment, as shown in FIG. The axis of the direction can be rotated to drive the second part 332 to rotate, so that the solution in the syringe barrel 310 can evenly cover the surface to be tested of the silicon chip 10 to be tested through the opening 332b. In this way, since the second part 332 can rotate along the circumferential direction of the silicon chip 10 to be tested, the reaction solution can be more evenly coated on the surface of the silicon chip 10 to be tested during the rotation process.

需要說明的是,在一些實施例中,該第一部分331的旋轉軸線與該注射筒310可同軸線,可通過操作該注射筒310旋轉,以驅動該第一部分331旋轉。一種更為具體的實施例中,可採用手動方式操作該注射筒310旋轉,也可以選用電動驅動方式來驅動該注射筒310旋轉。在該第一部分331的旋轉過程中,其旋轉速度最好均勻,以提高反應溶液塗佈均勻性。It should be noted that in some embodiments, the rotation axis of the first part 331 and the syringe barrel 310 may be coaxial, and the syringe barrel 310 may be operated to rotate to drive the first part 331 to rotate. In a more specific embodiment, the syringe barrel 310 can be rotated manually, or an electric drive can be used to drive the syringe barrel 310 to rotate. During the rotation of the first part 331, its rotation speed is preferably uniform to improve the uniformity of the reaction solution coating.

此外,在一些示例性的實施例中,該拖盤100的承托面上設有用於容納該待檢測矽片10的容納槽110,該容納槽110的深度大於該待檢測矽片10的厚度,且該容納槽110的底部開設有通孔120,該通孔120的內徑尺寸小於該待檢測矽片10的外徑尺寸。In addition, in some exemplary embodiments, a receiving groove 110 for receiving the silicon wafer 10 to be tested is provided on the supporting surface of the tray 100, the depth of the receiving groove 110 is greater than the thickness of the silicon wafer 10 to be tested, and a through hole 120 is opened at the bottom of the receiving groove 110, and the inner diameter of the through hole 120 is smaller than the outer diameter of the silicon wafer 10 to be tested.

採用上述方案,該矽片可置於該容納槽110內,且容納槽110的深度大於待檢測矽片10的厚度,這樣,當該注射器300向該腔室A內注入一定量的反應溶液時,可保證反應溶液與晶圓充分反應,避免反應溶液流失。並且,該容納槽110的底部開設通孔120,當待檢測矽片10置於該容納槽110內時,該待檢測矽片10的圓心可與該通孔120的圓心相重合,且該通孔120的尺寸小於待檢測矽片10的外徑尺寸,這樣的設置,一方面,該通孔120可減少反應溶液與待檢測矽片10的非待測表面(即矽片背面)與反應溶液接觸,確保反應溶液僅與待檢測矽片10的待測表面接觸反應;另一方面,通孔120的尺寸適當小於待檢測矽片10的尺寸,可避免待檢測矽片10從該通孔120脫落。需要說明的是,該通孔120與待檢測矽片10的尺寸差應盡可能小,以減少反應溶液與矽片背面接觸,更有利於提高檢測結果的準確性。By adopting the above solution, the silicon wafer can be placed in the receiving groove 110, and the depth of the receiving groove 110 is greater than the thickness of the silicon wafer 10 to be tested. In this way, when the injector 300 injects a certain amount of reaction solution into the chamber A, it can ensure that the reaction solution fully reacts with the wafer to avoid loss of the reaction solution. Furthermore, a through hole 120 is provided at the bottom of the receiving groove 110. When the silicon wafer 10 to be tested is placed in the receiving groove 110, the center of the circle of the silicon wafer 10 to be tested can coincide with the center of the circle of the through hole 120, and the size of the through hole 120 is smaller than the outer diameter of the silicon wafer 10 to be tested. With such a configuration, on the one hand, the through hole 120 can reduce the contact between the reaction solution and the non-test surface (i.e., the back side of the silicon wafer) of the silicon wafer 10 to be tested, thereby ensuring that the reaction solution only contacts and reacts with the test surface of the silicon wafer 10 to be tested; on the other hand, the size of the through hole 120 is appropriately smaller than the size of the silicon wafer 10 to be tested, thereby preventing the silicon wafer 10 to be tested from falling off the through hole 120. It should be noted that the size difference between the through hole 120 and the silicon wafer 10 to be tested should be as small as possible to reduce the contact between the reaction solution and the back of the silicon wafer, which is more conducive to improving the accuracy of the test result.

此外,在一些實施例中,該矽片檢測工具還可以包括一固定件400,該固定件400可向該待檢測矽片10施加一作用力,以使待檢測矽片10與該容納槽110的底部相抵而緊貼至容納槽110的底部,從而通過該待檢測矽片10封閉該通孔120。示例性的,該固定件400可以為一固定環,該固定環環繞該待檢測矽片10的外周側設置且盡可能多地暴露出該待檢測矽片10的待測表面。In addition, in some embodiments, the silicon wafer inspection tool may further include a fixing member 400, which can apply a force to the silicon wafer 10 to be inspected, so that the silicon wafer 10 to be inspected abuts against the bottom of the receiving groove 110 and is tightly attached to the bottom of the receiving groove 110, thereby closing the through hole 120 through the silicon wafer 10 to be inspected. Exemplarily, the fixing member 400 may be a fixing ring, which is arranged around the outer peripheral side of the silicon wafer 10 to be inspected and exposes the surface to be inspected of the silicon wafer 10 to be inspected as much as possible.

此外,示例性的,該注射頭330與該注射筒310之間設有控制閥340,通過該控制閥340可控制該注射頭330的開通和關閉。當需要注射或抽取反應溶液時,可打開該控制閥340。In addition, illustratively, a control valve 340 is provided between the injection head 330 and the syringe 310, and the opening and closing of the injection head 330 can be controlled by the control valve 340. When the reaction solution needs to be injected or extracted, the control valve 340 can be opened.

此外,示例性的,該注射頭330在該注入孔210內沿垂直於該拖盤100的承托面方向可移動,也就是說,該注射頭330可調整其伸入至腔室A內的深度,且該注射頭330可在該注入孔210內自由旋轉。In addition, for example, the injection head 330 is movable in the injection hole 210 in a direction perpendicular to the supporting surface of the tray 100 , that is to say, the injection head 330 can adjust its extension into the chamber A. depth, and the injection head 330 can freely rotate within the injection hole 210 .

示例性的,該注射筒310上設有刻度310a,以便於定量注射和收集反應溶液。Illustratively, the syringe 310 is provided with a scale 310a to facilitate quantitative injection and collection of the reaction solution.

此外,還需要說明的是,該注射器300向該腔室A內注入和抽取反應溶液的過程可通過人工手動完成,例如,在注射器300上設置手動操作部350;也可以通過電動方式驅動以實現自動注入和抽取過程。在一種具體實施例中,該矽片檢測工具還可以包括處理器,可控制該注射器300的注射和抽取動作、以及該注射器300的旋轉動作,以實現自動化檢測過程。In addition, it should be noted that the process of injecting and extracting the reaction solution from the syringe 300 into the chamber A can be completed manually. For example, a manual operating part 350 is provided on the syringe 300; it can also be driven by electric means. Automatic injection and extraction process. In a specific embodiment, the silicon wafer inspection tool may further include a processor that can control the injection and extraction actions of the syringe 300 and the rotation action of the syringe 300 to implement an automated inspection process.

此外,本發明實施例還提供了一種矽片檢測方法,採用本發明實施例提供的矽片檢測工具對矽片進行檢測;該矽片檢測方法包括: 步驟S01、將待檢測矽片10放置於由該拖盤100與該防護罩200配合形成的腔室A內; 其中,該拖盤100與該防護罩200為可拆卸連接,並且,在一些實施例中,該待檢測矽片10可放置在該拖盤100的容納槽110內,且可通過該固定件400將該待檢測矽片10抵壓至該容納槽110底部以封閉該通孔120; 步驟S02、在該注射器300的注射筒310內加入反應溶液; 其中,一種具體實施例中,該檢測過程具體可為:利用多晶矽超痕量檢測技術實現矽片內金屬的檢測時,該反應溶液可為一定比例配比的氫氟酸和硝酸的混合液,顯然,在實際應用中,該反應溶液可根據實際檢測需求進行適應性調整。 In addition, the embodiment of the present invention also provides a silicon wafer detection method, which uses the silicon wafer detection tool provided by the embodiment of the present invention to detect the silicon wafer; the silicon wafer detection method includes: Step S01: Place the silicon chip 10 to be detected in the chamber A formed by the cooperation of the tray 100 and the protective cover 200; The tray 100 and the protective cover 200 are detachably connected, and in some embodiments, the silicon chip 10 to be detected can be placed in the receiving slot 110 of the tray 100 and can be passed through the fixing member 400 Press the silicon chip 10 to be detected to the bottom of the receiving groove 110 to close the through hole 120; Step S02: Add the reaction solution into the syringe barrel 310 of the syringe 300; Among them, in a specific embodiment, the detection process can be as follows: when using polycrystalline silicon ultra-trace detection technology to detect metals in silicon wafers, the reaction solution can be a mixture of hydrofluoric acid and nitric acid in a certain proportion, Obviously, in practical applications, the reaction solution can be adaptively adjusted according to actual detection needs.

步驟S03、通過該注射頭330向該腔室A內注射反應溶液,以使該反應溶液分佈在該待檢測矽片10的待測表面,對矽片的待測表面進行處理; 其中,在本步驟中,在一種具體實施例中,可繞垂直該拖盤100的承托面方向的軸線旋轉該第一部分331,以帶動該第二部分332旋轉,以使該注射筒310內的溶液經由該開孔332b均勻覆蓋至該待檢測矽片10的待測表面; 步驟S04、通過該注射頭330抽取該腔室A內反應溶液,以收集刻蝕後的反應溶液; 在本步驟中,在一種具體實施例中,繞垂直該拖盤100的承托面方向的軸線旋轉該第一部分331,以帶動該第二部分332旋轉,以使該注射筒310內的溶液從該待檢測矽片10的待測表面經由該開孔332b收集至注射筒310。 Step S03, injecting the reaction solution into the chamber A through the injection head 330, so that the reaction solution is distributed on the surface to be tested of the silicon wafer 10 to be tested, and the surface to be tested of the silicon wafer is processed; Wherein, in this step, in a specific embodiment, the first part 331 can be rotated around the axis perpendicular to the supporting surface direction of the tray 100 to drive the second part 332 to rotate, so that the solution in the injection cylinder 310 is evenly covered to the surface to be tested of the silicon wafer 10 to be tested through the opening 332b; Step S04, extracting the reaction solution in the chamber A through the injection head 330 to collect the reaction solution after etching; In this step, in a specific embodiment, the first part 331 is rotated around an axis perpendicular to the supporting surface direction of the tray 100 to drive the second part 332 to rotate, so that the solution in the syringe 310 is collected from the surface to be tested of the silicon wafer 10 to be tested to the syringe 310 through the opening 332b.

步驟S05、對收集的反應溶液進行測試。Step S05: Test the collected reaction solution.

本步驟中,在一種具體實施例中,該檢測過程具體可為:利用多晶矽超痕量檢測技術實現矽片內金屬的檢測時,可對收集的反應溶液進行金屬元素測試。當然,實際應用中,可根據實際需求對反應溶液進行測試。In this step, in a specific embodiment, the detection process can be specifically as follows: when the polycrystalline silicon ultra-trace detection technology is used to detect metals in silicon wafers, the collected reaction solution can be tested for metal elements. Of course, in actual applications, the reaction solution can be tested according to actual needs.

此外,示例性的,上述步驟S03之前,該矽片檢測方法還包括: 沿垂直該拖盤100的承托面方向向靠近該拖盤100方向移動該注射頭330,以使該注射頭330與該待檢測矽片10的待測表面保持預定距離; 該步驟S03之後,步驟S04之前,該矽片檢測方法還包括: 步驟S03’、沿垂直該拖盤100的承托面方向向靠近該拖盤100方向移動該注射頭330,以使該注射頭330與該待檢測矽片10的待測表面的反應溶液液面接觸。 In addition, illustratively, before the above step S03, the silicon wafer detection method further includes: Moving the injection head 330 in a direction perpendicular to the supporting surface of the tray 100 toward the tray 100, so that the injection head 330 maintains a predetermined distance from the surface to be tested of the silicon wafer 10 to be tested; After the step S03 and before the step S04, the silicon wafer detection method further includes: Step S03', moving the injection head 330 in a direction perpendicular to the supporting surface of the tray 100 toward the tray 100, so that the injection head 330 contacts the liquid surface of the reaction solution on the surface to be tested of the silicon wafer 10 to be tested.

上述步驟S03’中,在向腔室A內注入反應溶液時,可調整注射器300伸入腔室A的深度,使注射頭330距離待檢測矽片10的待測表面有一定距離,在刻蝕完成後收集反應溶液時,可調節注射器300伸入腔室A的深度,使注射器300更深入腔室A內,以便於注射頭330可接觸到反應溶液液面,以充分收集反應溶液。In the above step S03', when injecting the reaction solution into the chamber A, the depth of the syringe 300 extending into the chamber A can be adjusted so that the injection head 330 is at a certain distance from the surface of the silicon wafer 10 to be tested. During etching When collecting the reaction solution after completion, the depth of the syringe 300 extending into the chamber A can be adjusted so that the syringe 300 goes deeper into the chamber A so that the injection head 330 can contact the reaction solution level to fully collect the reaction solution.

需要說明的是,在收集反應溶液過程中,可根據反應溶液液面位置,邊收集反應溶液邊調整注射頭330伸入腔室A的深度。It should be noted that during the process of collecting the reaction solution, the depth of the injection head 330 extending into the chamber A can be adjusted while collecting the reaction solution according to the liquid level position of the reaction solution.

有以下幾點需要說明: (1)本發明實施例附圖只涉及到與本發明實施例涉及到的結構,其他結構可參考通常設計; (2)為了清晰起見,在用於描述本發明的實施例的附圖中,層或區域的厚度被放大或縮小,即這些附圖並非按照實際的比例繪製。可以理解,當諸如層、膜、區域或基板之類的元件被稱作位於另一元件“上”或“下”時,該元件可以“直接”位於另一元件“上”或“下”或者可以存在中間元件; (3)在不衝突的情況下,本發明的實施例及實施例中的特徵可以相互組合以得到新的實施例。 The following points need to be explained: (1) The drawings of the embodiments of the present invention only involve the structures involved in the embodiments of the present invention, and other structures can refer to the general design; (2) For the sake of clarity, in the drawings used to describe the embodiments of the present invention, the thickness of the layer or region is enlarged or reduced, that is, these drawings are not drawn according to the actual scale. It can be understood that when an element such as a layer, film, region or substrate is said to be located "on" or "under" another element, the element can be "directly" located "on" or "under" another element or there can be an intermediate element; (3) In the absence of conflict, the embodiments of the present invention and the features in the embodiments can be combined with each other to obtain new embodiments.

顯然,本領域的具有通常知識者可以對本發明進行各種改動和變型而不脫離本發明的精神和範圍。這樣,倘若本發明的這些修改和變型屬本發明申請專利範圍及其等同技術的範圍之內,則本發明也意圖包含這些改動和變型在內。Obviously, a person skilled in the art can make various changes and modifications to the present invention without departing from the spirit and scope of the present invention. Thus, if these modifications and variations of the present invention fall within the scope of the present invention's patent application and its equivalent technology, the present invention is also intended to include these modifications and variations.

10:矽片 100:拖盤 110:容納槽 120:容納槽 200:防護罩 210:注入孔 300:注射器 310:注射筒 310a:刻度 320:活塞 330:注射頭 331:第一部分 3311:豎管 332:第二部分 332a:底面 332b:開孔 3321:橫管 340:控制閥 350:手動操作部 400:固定件 A:腔室 10: Silicon wafer 100: Drag tray 110: Receiving tank 120: Receiving tank 200: Protective cover 210: Injection hole 300: Syringe 310: Syringe barrel 310a: Scale 320: Piston 330: Injection head 331: First part 3311: Vertical tube 332: Second part 332a: Bottom surface 332b: Opening 3321: Horizontal tube 340: Control valve 350: Manual operation part 400: Fixing part A: Chamber

圖1表示本發明實施例中提供的矽片檢測工具的整體結構示意圖; 圖2表示本發明實施例中提供的矽片檢測工具中橫管的結構示意圖; 圖3表示本發明實施例中提供的矽片檢測工具的注射頭與拖盤組合的俯視圖。 FIG1 is a schematic diagram showing the overall structure of the silicon wafer detection tool provided in the embodiment of the present invention; FIG2 is a schematic diagram showing the structure of the cross tube in the silicon wafer detection tool provided in the embodiment of the present invention; FIG3 is a top view showing the combination of the injection head and the tray of the silicon wafer detection tool provided in the embodiment of the present invention.

10:矽片 10: Silicon wafer

100:拖盤 100: Drag tray

110:容納槽 110: Accommodation slot

120:容納槽 120: Accommodation slot

200:防護罩 200: Protective cover

210:注入孔 210: injection hole

300:注射器 300: syringe

310:注射筒 310:Syringe barrel

310a:刻度 310a: Scale

320:活塞 320:piston

330:注射頭 330:Injection head

331:第一部分 331: Part 1

3311:豎管 3311:Standpipe

332:第二部分 332: Part 2

332a:底面 332a: Bottom surface

3321:橫管 3321:Horizontal tube

340:控制閥 340:Control valve

350:手動操作部 350:Manual operation part

400:固定件 400: Fixtures

A:腔室 A: Chamber

Claims (10)

一種矽片檢測工具,包括:用於放置待檢測矽片的拖盤;用於與該拖盤配合形成腔室的防護罩,該防護罩扣合至該拖盤上且該防護罩上開設有注入孔和排氣孔;用於向該腔室內注射及抽取反應溶液的注射器,該注射器包括注射筒、可移動設置於該注射筒內的活塞、及可拆卸連接至該注射筒端部的注射頭,該注射筒位於該腔室外,該注射頭經由該注入孔插入至該腔室內,該注射頭包括一平行於該拖盤的承托面且朝向該拖盤的承托面設置的底面,該底面上分佈有多個開孔;其中,在向該腔室內注入該反應溶液時,能夠調整該注射器伸入該腔室的深度,使該注射頭距離該待檢測矽片的待測表面保持一定距離。 A silicon wafer testing tool comprises: a tray for placing a silicon wafer to be tested; a protective cover for forming a chamber with the tray, the protective cover being buckled onto the tray and having an injection hole and an exhaust hole; a syringe for injecting and extracting a reaction solution into the chamber, the syringe comprising a syringe barrel, a piston movably arranged in the syringe barrel, and an injection head detachably connected to the end of the syringe barrel, The syringe is located outside the chamber, and the injection head is inserted into the chamber through the injection hole. The injection head includes a bottom surface that is parallel to the supporting surface of the tray and faces the supporting surface of the tray, and a plurality of openings are distributed on the bottom surface; when the reaction solution is injected into the chamber, the depth of the syringe extending into the chamber can be adjusted so that the injection head maintains a certain distance from the surface to be tested of the silicon wafer to be tested. 如請求項1所述的矽片檢測工具,其中,該注射頭包括:第一部分,該第一部分內部中空且穿設於該注入孔內;及第二部分,該第二部分內部中空且與該第一部分彼此內腔相通,該第二部分包括該底面。 The silicon chip inspection tool according to claim 1, wherein the injection head includes: a first part, the first part is hollow inside and penetrates the injection hole; and a second part, the second part is hollow inside and connected with the injection hole. The first parts communicate with each other and the second part includes the bottom surface. 如請求項2所述的矽片檢測工具,其中,該第一部分包括垂直該拖盤的承托面設置的豎管;該第二部分包括平行該拖盤的承托面設置的至少一根橫管,該橫管在平行於該拖盤的承托面方向上的相對兩端封閉,且多個 該開孔沿該橫管的軸線方向均勻排列,且該橫管沿其軸線方向上的尺寸大於或等於該待檢測矽片的外徑尺寸。 The silicon chip detection tool according to claim 2, wherein the first part includes a vertical pipe arranged perpendicularly to the supporting surface of the tray; and the second part includes at least one horizontal tube arranged parallel to the supporting surface of the tray. tube, the transverse tube is closed at opposite ends in a direction parallel to the supporting surface of the tray, and has a plurality of The openings are evenly arranged along the axial direction of the transverse tube, and the size of the transverse tube along the axial direction is greater than or equal to the outer diameter of the silicon chip to be detected. 如請求項2所述的矽片檢測工具,其中,該第一部分繞垂直該拖盤的承托面方向的軸線可旋轉,以帶動該第二部分旋轉,以使該注射筒內的溶液經由該開孔均勻覆蓋至該待檢測矽片的待測表面。 As described in claim 2, the first part can rotate around an axis perpendicular to the supporting surface of the tray to drive the second part to rotate, so that the solution in the syringe can be evenly covered on the surface to be tested of the silicon wafer to be tested through the opening. 如請求項4所述的矽片檢測工具,其中,該拖盤的承托面上設有用於容納該待檢測矽片的容納槽,該容納槽的深度大於該待檢測矽片的厚度,且該容納槽的底部開設有通孔,該通孔的內徑尺寸小於該待檢測矽片的外徑尺寸。 The silicon chip detection tool according to claim 4, wherein the supporting surface of the tray is provided with an accommodating groove for accommodating the silicon chip to be inspected, the depth of the accommodating groove is greater than the thickness of the silicon chip to be inspected, and A through hole is provided at the bottom of the receiving groove, and the inner diameter of the through hole is smaller than the outer diameter of the silicon chip to be detected. 如請求項1所述的矽片檢測工具,其中,該注射頭與該注射筒之間設有控制閥。 A silicon wafer inspection tool as described in claim 1, wherein a control valve is provided between the injection head and the injection barrel. 如請求項1所述的矽片檢測工具,其中,該注射頭在該注入孔內沿垂直於該拖盤的承托面方向可移動。 A silicon wafer inspection tool as described in claim 1, wherein the injection head is movable in the injection hole in a direction perpendicular to the supporting surface of the tray. 一種矽片檢測方法,採用如請求項1至7中任一項所述的矽片檢測工具對矽片進行檢測;該矽片檢測方法包括如下步驟:將待檢測矽片放置於由該拖盤與該防護罩配合形成的腔室內;在該注射器的注射筒內加入反應溶液;通過該注射頭向該腔室內注射反應溶液,以使該反應溶液分佈在該待檢測矽片的待測表面,對矽片的待測表面進行處理; 該通過該注射頭向該腔室內注射反應溶液之前,該矽片檢測方法還包括:沿垂直該拖盤的承托面方向向靠近該拖盤方向移動該注射頭,以使該注射頭與該待檢測矽片的待測表面保持預定距離;通過該注射頭抽取該腔室內反應溶液,以收集刻蝕後的反應溶液;對收集蝕刻後的反應溶液進行測試。 A silicon wafer testing method, using the silicon wafer testing tool as described in any one of claims 1 to 7 to test the silicon wafer; the silicon wafer testing method comprises the following steps: placing the silicon wafer to be tested in a chamber formed by the tray and the protective cover; adding a reaction solution into the syringe barrel of the syringe; injecting the reaction solution into the chamber through the injection head so that the reaction solution is distributed on the surface to be tested of the silicon wafer to be tested, and testing the silicon wafer; The surface to be tested is processed; Before the reaction solution is injected into the chamber through the injection head, the silicon wafer detection method further includes: moving the injection head in a direction perpendicular to the supporting surface of the tray toward the tray so that the injection head and the surface to be tested of the silicon wafer to be tested maintain a predetermined distance; extracting the reaction solution in the chamber through the injection head to collect the reaction solution after etching; and testing the collected reaction solution after etching. 如請求項8所述的矽片檢測方法,其中,應用於如請求項4所述的矽片檢測工具,該矽片檢測方法中,該通過該注射頭向該腔室內注射反應溶液,具體包括:繞垂直該拖盤的承托面方向的軸線旋轉該注射頭的第一部分,以帶動該注射頭的第二部分旋轉,以使該注射筒內的溶液經由該開孔均勻覆蓋至該待檢測矽片的待測表面;該通過該注射頭抽取該腔室內反應溶液,具體包括:繞垂直該拖盤的承托面方向的軸線旋轉該注射頭的第一部分,以帶動該注射頭的第二部分旋轉,以使該注射筒內的溶液從該待檢測矽片的待測表面經由該開孔收集至注射筒。 The silicon wafer inspection method as described in claim 8, wherein the method is applied to the silicon wafer inspection tool as described in claim 4, wherein the injection of the reaction solution into the chamber through the injection head specifically includes: rotating the first part of the injection head around an axis perpendicular to the supporting surface of the tray to drive the second part of the injection head to rotate, so that the solution in the injection barrel is uniformly covered to the surface to be tested of the silicon wafer to be tested through the opening; extracting the reaction solution in the chamber through the injection head specifically includes: rotating the first part of the injection head around an axis perpendicular to the supporting surface of the tray to drive the second part of the injection head to rotate, so that the solution in the injection barrel is collected from the surface to be tested of the silicon wafer to be tested to the injection barrel through the opening. 如請求項8所述的矽片檢測方法,其中,應用於如請求項7所述的矽片檢測工具,其中,該通過該注射頭向該腔室內注射反應溶液之後,該通過該注射頭抽取該腔室內反應溶液之前,該矽片檢測方法還包括:沿垂直該拖盤的承托面方向向靠近該拖盤方向移動該注射頭, 以使該注射頭與該待檢測矽片的待測表面的反應溶液液面接觸。 The silicon wafer inspection method as described in claim 8, wherein the method is applied to the silicon wafer inspection tool as described in claim 7, wherein after the reaction solution is injected into the chamber by the injection head and before the reaction solution in the chamber is extracted by the injection head, the silicon wafer inspection method further comprises: moving the injection head in a direction perpendicular to the supporting surface of the tray toward the tray, so that the injection head contacts the liquid surface of the reaction solution on the surface to be inspected of the silicon wafer to be inspected.
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